Integrated brain-like chip and manufacturing method thereof

Abstract

The invention provides an integrated brain-like chip. The integrated brain-like chip comprises a substrate; a buffer layer on the substrate; a bottom electrode on the buffer layer; a first GaN layer on the bottom electrode; a multi-quantum well layer or a multi-quantum dot layer on the first GaN layer; the second GaN layer is arranged on the multi-quantum well layer or the quantum dot layer; a top electrode on the second GaN layer; wherein the first GaN layer is an N type doped GaN layer, and the second GaN layer is a P type doped GaN layer; or, the first GaN layer is a P-type doped GaN layer, and the second GaN layer is an N-type doped GaN layer. The invention further provides a manufacturing method of the integrated brain-like chip. The integrated brain-like chip has a photoelectric detection function, a brain-like synapse function and a light-emitting display function at the same time, the integration level is higher, the efficiency is higher, and the application scene is wider.

Description

Technical Field

[0001] The present invention belongs to the field of artificial intelligence and micro-nano display technology, and specifically relates to an integrated brain-like chip and a manufacturing method thereof. Background Art

[0002] The rapid development of artificial intelligence has made the information processing efficiency issues of storage and computing systems based on the traditional von Neumann architecture increasingly prominent, and brain-like computing that simulates the human brain and biological neural networks has received great attention from the scientific community.

[0003] Brain-inspired chips use circuits to simulate the neural network architecture of the human brain. They possess parallel information processing capabilities similar to those of the human brain and are considered ideal for simulating biological synapses while reducing computing power consumption. They are central to achieving high-performance brain-inspired computing. Improving the integration and power consumption of brain-inspired chips are key to improving their performance. However, most existing brain-inspired chips based on memristive materials can only simulate the functions of biological synapses, resulting in limited functionality, poor stability, and high power consumption. Summary of the Invention

[0004] In order to solve the technical problems existing in the above-mentioned prior art, the present invention provides an integrated brain-like chip with high integration and low power consumption and a manufacturing method thereof.

[0005] According to one aspect of the present invention, an integrated brain-like chip is provided, including: a substrate; a buffer layer on the substrate; a bottom electrode on the buffer layer; a first GaN layer on the bottom electrode; a multi-quantum well layer or a multi-quantum dot layer on the first GaN layer; a second GaN layer on the multi-quantum well layer or the quantum dot layer; and a top electrode on the second GaN layer; wherein the first GaN layer is an N-type doped GaN layer, and the second GaN layer is a P-type doped GaN layer; or, the first GaN layer is a P-type doped GaN layer, and the second GaN layer is an N-type doped GaN layer.

[0006] In an example of the integrated brain-like chip provided in the above aspect, the multi-quantum well layer includes multiple InGaN layers and multiple GaN layers, and the InGaN layers and the GaN layers are alternately stacked; wherein, the InGaN layer is an N-type doped InGaN layer, and the GaN layer is a P-type doped GaN layer; or, the InGaN layer is a P-type doped InGaN layer, and the GaN layer is an N-type doped GaN layer.

[0007] In an example of an integrated brain-like chip provided in the above aspect, the multi-quantum dot layer includes multiple layers of InGaN quantum dot layers and multiple layers of GaN layers, and the InGaN quantum dot layers and the GaN layers are alternately stacked; wherein, the InGaN quantum dot layer is an N-type doped InGaN quantum dot layer, and the GaN layer is a P-type doped GaN layer; or, the InGaN quantum dot layer is a P-type doped InGaN quantum dot layer, and the GaN layer is an N-type doped GaN layer.

[0008] In an example of the integrated brain-like chip provided in the above aspect, there are multiple bottom electrodes, and the multiple bottom electrodes are independent of each other. The first GaN layer, multi-quantum well layer or multi-quantum dot layer, and second GaN layer on each bottom electrode are independent of the first GaN layer, multi-quantum well layer or multi-quantum dot layer, and second GaN layer on other bottom electrodes.

[0009] In an example of the integrated brain-inspired chip provided in the above aspect, the number of the top electrode is one, and the top electrode is disposed on all the second GaN layers.

[0010] In an example of the integrated brain-like chip provided in the above aspect, there are multiple top electrodes, and a corresponding top electrode is provided on each second GaN layer.

[0011] In an example of the integrated brain-inspired chip provided in the above aspect, the integrated brain-inspired chip further includes wires respectively led out from the bottom electrode and the top electrode.

[0012] In an example of the integrated brain-inspired chip provided in the above aspect, the top electrode is transparent in the visible light range.

[0013] According to another aspect of the present invention, a method for manufacturing an integrated brain-like chip includes: providing a substrate; forming a buffer layer on the substrate; forming a bottom electrode on the buffer layer; forming a first GaN layer on the bottom electrode; forming a multi-quantum well layer or a multi-quantum dot layer on the first GaN layer; forming a second GaN layer on the multi-quantum well layer or the quantum dot layer; and forming a top electrode on the second GaN layer; wherein the first GaN layer is an N-type doped GaN layer, and the second GaN layer is a P-type doped GaN layer; or, the first GaN layer is a P-type doped GaN layer, and the second GaN layer is an N-type doped GaN layer.

[0014] In the manufacturing method of the integrated brain-like chip provided in the other aspect above, there are multiple bottom electrodes, and the multiple bottom electrodes are independent of each other. The first GaN layer, multi-quantum well layer or multi-quantum dot layer, and second GaN layer on each bottom electrode are independent of the first GaN layer, multi-quantum well layer or multi-quantum dot layer, and second GaN layer on other bottom electrodes.

[0015] Beneficial effects: The integrated brain-like chip of the present invention has photoelectric detection function, brain-like synaptic function and luminescent display function at the same time, with higher integration, higher efficiency and wider application scenarios. Furthermore, compared with traditional thin film structures, the GaN nanowires in the integrated brain-like chip of the present invention are more conducive to releasing epitaxial stress, reducing defects and dislocations, and improving crystal quality. At the same time, reducing the material size is conducive to reducing power consumption, thereby improving the performance of the integrated brain-like chip. Furthermore, the integrated brain-like chip of the present invention has a high level of integration. Among them, by designing a reasonable GaN nanowire epitaxial structure, the brain-like chip can have both functional and miniaturized properties, simplify the process flow, and is easy to integrate and process in the later stage. It is suitable for scenarios such as micro-nano displays, embedded systems or wearable devices, laying the foundation for improving the level of chip integration. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above and other aspects, features and advantages of the embodiments of the present invention will become more apparent through the following description in conjunction with the accompanying drawings, in which:

[0017] Figure 1 is a schematic structural diagram of an integrated brain-like chip according to an embodiment of the present invention;

[0018] Figure 2 is a schematic structural diagram of an integrated brain-inspired chip according to another embodiment of the present invention;

[0019] Figure 3 is a schematic structural diagram of an integrated brain-inspired chip according to another embodiment of the present invention;

[0020] Figure 4 is a flow chart of a method for manufacturing an integrated brain-like chip according to an embodiment of the present invention;

[0021] Figure 5 3 is a schematic structural diagram of an integrated brain-like chip according to another embodiment of the present invention. DETAILED DESCRIPTION

[0022] Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention may be implemented in many different forms, and the present invention should not be construed as limited to the specific embodiments set forth herein. Instead, these embodiments are provided to explain the principles of the present invention and its practical application, thereby enabling others skilled in the art to understand the various embodiments of the present invention and various modifications suitable for specific intended applications.

[0023] As used herein, the term "including" and its variations are open terms meaning "including but not limited to". The terms "based on", "according to", etc. mean "based at least in part on", "based at least in part on". The terms "one embodiment" and "an embodiment" mean "at least one embodiment". The term "another embodiment" means "at least one other embodiment". The terms "first", "second", etc. may refer to different or the same objects. Other definitions may be included below, whether explicit or implicit. Unless the context clearly indicates otherwise, the definition of a term is consistent throughout the specification.

[0024] In response to the technical problems of conventional brain-like chips in the prior art, such as single functions, poor stability and high power consumption, the integrated brain-like chip provided by the present invention realizes the individual control of a single nanowire through a micro bottom electrode. The structure of the nanowire includes a P-type doped and N-type doped GaN epitaxial layer with photoelectric detection and brain-like synaptic functions, and an active layer containing InGaN material capable of light-emitting display. The array formed by the nanowires can enhance the signal strength and functionality of a single nanowire. Based on the integrated brain-like chip provided by the present invention, it can have a certain detection response under certain light stimulation and electrical stimulation, and can realize brain-like synaptic function by modulating light stimulation and electrical stimulation. In addition, the active layer in the nanowire can have the function of light-emitting display under a certain bias voltage, and the size effect of the nanowire is conducive to improving the overall resolution of the chip. Therefore, the innovation of the integrated brain-like chip provided by the present invention is that it can simultaneously realize the control of a single nanowire and improve the overall integration of the brain-like chip.

[0025] Figure 1 2 is a schematic structural diagram of an integrated brain-like chip according to an embodiment of the present invention.

[0026] Reference Figure 1 According to an embodiment of the present invention, the integrated brain-like chip includes: a substrate 60; a buffer layer 50 on the substrate 60; a bottom electrode 110 (see Figure 4(a) in the figure); a first GaN layer 40 on the bottom electrode 110; a multi-quantum well layer 30 on the first GaN layer 40; a second GaN layer 20 on the multi-quantum well layer 30; a top electrode 10 on the second GaN layer 20; wherein the first GaN layer 40 is an N-type doped GaN layer, and the second GaN layer 20 is a P-type doped GaN layer; or, the first GaN layer 40 is a P-type doped GaN layer, and the second GaN layer 20 is an N-type doped GaN layer.

[0027] In one example, the substrate 60 is a Si substrate, but the present invention is not limited thereto. In one example, the buffer layer 50 is an AlN buffer layer with a thickness of about 3 nm, but the present invention is not limited thereto.

[0028] In this embodiment, the multi-quantum well layer 30 includes multiple InGaN layers and multiple GaN layers, and the InGaN layers and the GaN layers are alternately stacked; wherein the InGaN layer is an N-type doped InGaN layer, and the GaN layer is a P-type doped GaN layer; or, the InGaN layer is a P-type doped InGaN layer, and the GaN layer is an N-type doped GaN layer.

[0029] In this embodiment, there are multiple bottom electrodes 110, and the multiple bottom electrodes 110 are independent of each other. Therefore, the first GaN layer 40, the multi-quantum well layer 30, and the second GaN layer 20 on one bottom electrode 110 constitute a nanowire NS (see FIG. Figure 4 (c) in the figure). Moreover, each nanowire is independent of each other, that is, the first GaN layer 40, the multi-quantum well layer 30, and the second GaN layer 20 on each bottom electrode 110 are independent of the first GaN layer, the multi-quantum well layer or the multi-quantum dot layer, and the second GaN layer on other bottom electrodes 110.

[0030] In this embodiment, there is one top electrode 10, which is disposed on all second GaN layers 20. The top electrode 10 is transparent in the visible light range. For example, the top electrode 10 can be made of ITO, but the present invention is not limited thereto. In another embodiment, there are multiple top electrodes 10, with one top electrode 10 disposed on each second GaN layer 20.

[0031] In this embodiment, the integrated brain-like chip according to the embodiment of the present invention further includes wires 70 respectively extending from the bottom electrode 110 and the top electrode 10. The arrangement of the wires 70 can facilitate circuit connection.

[0032] Figure 2 Schematic diagram of the structure of an integrated brain-like chip according to another embodiment of the present invention. Figure 2 ,and Figure 1The difference of the integrated brain-like chip shown is that the top electrode 10 ′ is made of graphene, which can improve the responsiveness to ultraviolet light stimulation and the brain-like synaptic performance.

[0033] Figure 3 FIG is a schematic structural diagram of an integrated brain-like chip according to another embodiment of the present invention. Figure 3 ,and Figure 1 The difference of the integrated brain-like chip shown is that a multi-quantum dot layer 100 is used instead of the multi-quantum well layer 30. The multi-quantum dot layer 100 includes multiple InGaN quantum dot layers and multiple GaN layers, and the InGaN quantum dot layers and the GaN layers are alternately stacked; wherein the InGaN quantum dot layer is an N-type doped InGaN quantum dot layer, and the GaN layer is a P-type doped GaN layer; or, the InGaN quantum dot layer is a P-type doped InGaN quantum dot layer, and the GaN layer is an N-type doped GaN layer.

[0034] Figure 4 4 is a flow chart of a method for manufacturing an integrated brain-like chip according to an embodiment of the present invention.

[0035] Reference Figure 4 , specifically Figure 4 As shown in FIG. 5 ( a ), first, a substrate 60 is provided; a buffer layer 50 is formed on the substrate 60 ; and a bottom electrode 110 is formed on the buffer layer 50 .

[0036] Specifically, the substrate 60 , such as a Si substrate, is placed in a molecular beam epitaxy (MBE) growth chamber for epitaxial growth to grow an AlN buffer layer 50 with a thickness of about 3 nm.

[0037] In addition, the specific method of forming the bottom electrode 110 on the buffer layer 50 includes the following steps:

[0038] In the first step, photoresist is evenly applied on the buffer layer 50 by spin coating, and the designed pattern is engraved through processes such as exposure.

[0039] In the second step, an inductively coupled plasma etching is performed using a mixture of Cl 2 and BCl 3 to remove the unnecessary buffer layer 50 .

[0040] In the third step, a micro bottom electrode 110 (which can be made of a metal material Au with good conductivity and not easily oxidized) is prepared on the patterned buffer layer 50 by electron beam evaporation technology of physical vapor deposition, and a wire 70 (such as Figure 4 (as shown in Figure (b)).

[0041] Next, refer to Figure 4 Figure (c) and Figure 1, growing the functional layers of the nanowire NS in an MBE growth chamber, specifically comprising the following steps:

[0042] In the first step, a layer of Si-doped GaN (with a carrier concentration of 2×10 17 cm -3 ) to obtain an N-type doped first GaN layer 40.

[0043] In the second step, a multi-quantum well layer 30 is formed by alternating multiple layers of P-type lightly doped and N-type lightly doped InGaN / GaN materials with a thickness of 20 nm on the first N-type doped GaN layer 40, and the number of quantum well layers is 10. In other embodiments, the second step can be replaced by another step; wherein the other step is: growing an N-type lightly doped InGaN quantum dot layer with a linear dimension of 20 nm on the first N-type doped GaN layer 40, growing a P-type lightly doped GaN layer with a thickness of 20 nm above the InGaN quantum dot layer, and alternately stacking the InGaN quantum dot layer and the GaN layer into a multi-layer structure to form a multi-quantum dot layer 100 (such as Figure 3 shown).

[0044] In the third step, a 100 nm thick Mg-doped GaN (with a carrier concentration of 2×10 17 cm -3 ) to obtain a P-type doped second GaN layer 20, thereby forming a PN junction with the multi-quantum well layer 30 and the N-type doped first GaN layer 40.

[0045] Finally, refer to Figure 4 In FIG. 5 , a 250 nm thick ITO layer is formed on the P-type doped second GaN layer 20 by sputtering deposition technology to form a common top electrode 10 , and the common top electrode 10 is led out with a wire 70 to facilitate circuit connection.

[0046] Figure 5 FIG is a schematic structural diagram of an integrated brain-like chip according to another embodiment of the present invention. Figure 5 ,Will Figure 4 The structure obtained in Figure (c) is cut (the wire 70 connected to the bottom electrode 110 is also cut off at this time) to obtain an independent single nanowire with multifunctionality, and then the single nanowire is transferred to the insulating substrate 90.

[0047] Then, electron beam evaporation is used to deposit a metal electrode 80 on the P-type doped second GaN layer 20. Preferably, the metal electrode 80 is made of a material with good electrical conductivity and stable physical and chemical properties, such as Au, Ag, Cu, etc.

[0048] Finally, a wire 70 connected to the bottom electrode 110 and a wire 70 connected to the metal electrode 80 are formed again, thereby preparing a single nanowire brain-like chip with multiple functions.

[0049] therefore, Figure 5 The brain-like chip obtained in the embodiment shown has a nanoscale size and has certain application prospects in the biomedical field.

[0050] In summary, the integrated brain-like chip according to the embodiment of the present invention has both photoelectric detection function, brain-like synaptic function and luminous display function, with higher integration, higher efficiency and wider application scenarios. Furthermore, compared with the traditional thin film structure, the GaN nanowires in the integrated brain-like chip according to the embodiment of the present invention are more conducive to releasing epitaxial stress, reducing defects and dislocations, and improving crystal quality. At the same time, reducing the material size is conducive to reducing power consumption, thereby improving the performance of the integrated brain-like chip. Furthermore, the integrated brain-like chip according to the embodiment of the present invention has a high level of integration. Among them, by designing a reasonable GaN nanowire epitaxial structure, the brain-like chip can have both functionality and miniaturization properties, simplify the process flow, and is easy to integrate and process in the later stage. It is suitable for scenarios such as micro-nano displays, embedded systems or wearable devices, laying the foundation for improving the level of chip integration.

[0051] While specific embodiments of the present invention have been described above, other embodiments are within the scope of the following claims.

[0052] Throughout this specification, the terms "exemplary," "example," and the like are used to mean "serving as an example, instance, or illustration" and do not imply "preferred" or "advantageous" over other embodiments. The detailed description includes specific details for the purpose of providing an understanding of the described techniques. However, these techniques can be practiced without these specific details. In some instances, well-known structures and devices are shown in block diagram form to avoid obscuring the concepts of the described embodiments.

[0053] The foregoing description of this specification is provided to enable any person skilled in the art to implement or use the present disclosure. Various modifications to this disclosure will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the scope of this disclosure. Therefore, this disclosure is not limited to the examples and designs described herein, but is intended to be consistent with the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An integrated brain-like chip, characterized in that: The integrated brain-like chip comprises: substrate; a buffer layer on the substrate; a bottom electrode on the buffer layer; a first GaN layer on the bottom electrode; a multi-quantum well layer or a multi-quantum dot layer on the first GaN layer; a second GaN layer on the multi-quantum well layer or the quantum dot layer; a top electrode on the second GaN layer; The first GaN layer is an N-type doped GaN layer, and the second GaN layer is a P-type doped GaN layer; or the first GaN layer is a P-type doped GaN layer, and the second GaN layer is an N-type doped GaN layer.

2. The integrated brain-like chip according to claim 1, characterized in that: The multi-quantum well layer includes multiple InGaN layers and multiple GaN layers, and the InGaN layers and the GaN layers are alternately stacked; The InGaN layer is an N-type doped InGaN layer, and the GaN layer is a P-type doped GaN layer; or the InGaN layer is a P-type doped InGaN layer, and the GaN layer is an N-type doped GaN layer.

3. The integrated brain-like chip according to claim 1, characterized in that: The multi-quantum dot layer includes multiple InGaN quantum dot layers and multiple GaN layers, and the InGaN quantum dot layers and the GaN layers are alternately stacked; The InGaN quantum dot layer is an N-type doped InGaN quantum dot layer, and the GaN layer is a P-type doped GaN layer; or the InGaN quantum dot layer is a P-type doped InGaN quantum dot layer, and the GaN layer is an N-type doped GaN layer.

4. The integrated brain-like chip according to any one of claims 1 to 3, characterized in that: There are multiple bottom electrodes, and the multiple bottom electrodes are independent of each other. The first GaN layer, multi-quantum well layer or multi-quantum dot layer, and second GaN layer on each bottom electrode are independent of the first GaN layer, multi-quantum well layer or multi-quantum dot layer, and second GaN layer on other bottom electrodes.

5. The integrated brain-like chip according to claim 4, characterized in that: The number of the top electrode is one, and the top electrode is arranged on all the second GaN layers.

6. The integrated brain-like chip according to claim 4, characterized in that: There are multiple top electrodes, and a corresponding top electrode is disposed on each second GaN layer.

7. The integrated brain-like chip according to claim 1, characterized in that: The integrated brain-like chip further includes wires respectively extending from the bottom electrode and the top electrode.

8. The integrated brain-like chip according to claim 1, characterized in that: The top electrode is transparent in the visible light range.

9. A method for manufacturing an integrated brain-like chip, characterized in that: The production method comprises: providing a substrate; forming a buffer layer on the substrate; forming a bottom electrode on the buffer layer; forming a first GaN layer on the bottom electrode; forming a multi-quantum well layer or a multi-quantum dot layer on the first GaN layer; forming a second GaN layer on the multi-quantum well layer or the quantum dot layer; forming a top electrode on the second GaN layer; The first GaN layer is an N-type doped GaN layer, and the second GaN layer is a P-type doped GaN layer; or the first GaN layer is a P-type doped GaN layer, and the second GaN layer is an N-type doped GaN layer.

10. The manufacturing method according to claim 9, characterized in that: There are multiple bottom electrodes, and the multiple bottom electrodes are independent of each other. The first GaN layer, multi-quantum well layer or multi-quantum dot layer, and second GaN layer on each bottom electrode are independent of the first GaN layer, multi-quantum well layer or multi-quantum dot layer, and second GaN layer on other bottom electrodes.

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