Micro light emitting diode chip

Abstract

The micro light emitting diode structure includes a first type conductive layer, a second type conductive layer stacked on the first type conductive layer, and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light-emitting layer extends along a horizontal plane away from a top edge of the first-type conductive layer and a bottom edge of the second-type conductive layer such that an edge of the light-emitting layer does not contact the top edge of the first-type conductive layer and the bottom edge of the second-type conductive layer. The bottom side of the second type conductive layer is aligned with the top side of the first type conductive layer.

Description

[0001] This application is a divisional application of the invention patent application with the application date of December 27, 2021, application number 202180087689.4, and invention name "Micro-light-emitting diode structure and micro-light-emitting diode chip including the structure".

[0002] Cross-reference to related applications

[0003] This application claims the benefit of priority to U.S. Provisional Application Serial No. 63 / 131,128, filed on December 28, 2020, the entire contents of which are incorporated herein by reference. Technical Field

[0004] The present disclosure relates to a micro light emitting diode structure and a micro light emitting diode chip including the micro light emitting diode structure. Background Art

[0005] Micro-LEDs (micro-LEDs) are devices that emit light using electrical signals and are several micrometers or even smaller. Micro-LEDs can be driven with low voltages, making them widely used in small optical components. In recent years, micro-LEDs have been developed as lighting sources by improving their efficiency. Summary of the Invention

[0006] According to one aspect of several embodiments of the present disclosure, a micro-LED structure includes: a first-type conductive layer; a second-type conductive layer stacked on the first-type conductive layer; and a light-emitting layer formed between the first-type conductive layer and the second-type conductive layer. The light-emitting layer extends along a horizontal plane away from a top edge of the first-type conductive layer and a bottom edge of the second-type conductive layer, such that an edge of the light-emitting layer does not contact the top edge of the first-type conductive layer and the bottom edge of the second-type conductive layer. The bottom edge of the second-type conductive layer is aligned with the top edge of the first-type conductive layer.

[0007] According to another aspect of several embodiments of the present disclosure, a micro-LED structure includes: a first-type conductive layer; a second-type conductive layer stacked on the first-type conductive layer; and a light-emitting layer formed between the first-type conductive layer and the second-type conductive layer. The light-emitting layer extends along a horizontal plane away from the top edge of the first-type conductive layer and the bottom edge of the second-type conductive layer, such that an edge of the light-emitting layer does not contact the top edge of the first-type conductive layer and the bottom edge of the second-type conductive layer. The outline of the second-type conductive layer, vertically projected onto the top surface of the first-type conductive layer, is surrounded by the top edge of the first-type conductive layer.

[0008] According to another aspect of several embodiments of the present disclosure, a micro-LED structure includes: a first-type conductive layer; a second-type conductive layer stacked on the first-type conductive layer; and a light-emitting layer formed between the first-type conductive layer and the second-type conductive layer. The light-emitting layer extends along a horizontal plane away from the top edge of the first-type conductive layer and the bottom edge of the second-type conductive layer, such that an edge of the light-emitting layer does not contact the top edge of the first-type conductive layer and the bottom edge of the second-type conductive layer. The outline of the first-type conductive layer, vertically projected onto the bottom surface of the second-type conductive layer, is surrounded by the bottom edge of the second-type conductive layer.

[0009] According to another aspect of several embodiments of the present disclosure, a micro-LED structure includes: a first-type conductive layer; a second-type conductive layer stacked on the first-type conductive layer; and a light-emitting layer formed between the first-type conductive layer and the second-type conductive layer. The light-emitting layer extends along a horizontal plane away from an edge of the first-type conductive layer. The edge of the light-emitting layer is aligned with an edge of the second-type conductive layer. The edge of the second-type conductive layer extends along the horizontal plane away from the edge of the first-type conductive layer.

[0010] According to another aspect of several embodiments of the present disclosure, a micro-LED structure includes: a first-type conductive layer; a second-type conductive layer stacked on the first-type conductive layer; and a light-emitting layer formed between the first-type conductive layer and the second-type conductive layer. The light-emitting layer extends along a horizontal plane away from an edge of the second-type conductive layer. An edge of the light-emitting layer is aligned with an edge of the first-type conductive layer. The edge of the first-type conductive layer extends along the horizontal plane away from an edge of the second-type conductive layer.

[0011] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one of the plurality of micro-LEDs includes: a first-type conductive layer; a second-type conductive layer stacked on the first-type conductive layer; and a light-emitting layer formed between the first-type conductive layer and the second-type conductive layer. The light-emitting layer is continuously formed across the entire micro-LED chip and is shared by the plurality of micro-LEDs.

[0012] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one of the plurality of micro-LEDs includes: a first-type conductive layer; a second-type conductive layer stacked on the first-type conductive layer; and a light-emitting layer formed between the first-type conductive layer and the second-type conductive layer. The light-emitting layer is continuously formed across the entire micro-LED chip and is shared by the plurality of micro-LEDs. An isolation structure is formed between adjacent micro-LEDs, with at least a portion of the isolation structure formed in the light-emitting layer.

[0013] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one of the plurality of micro-LEDs includes: a first-type conductive layer; a second-type conductive layer stacked on the first-type conductive layer; and a light-emitting layer formed between the first-type conductive layer and the second-type conductive layer. The light-emitting layer is continuously formed across the entire chip and is shared by the plurality of micro-LEDs. An isolation structure is formed between adjacent micro-LEDs, with at least a portion of the isolation structure formed in the light-emitting layer. The top surface of the isolation structure is aligned with the top of the light-emitting layer, and the bottom surface of the isolation structure is below the light-emitting layer.

[0014] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED among the plurality of micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light-emitting layer formed between the first type conductive layer and the second type conductive layer. The light-emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light-emitting layer. The micro-LED chip further includes: a top spacer formed on the top surface of the light-emitting layer; a bottom spacer formed on the bottom surface of the light-emitting layer, wherein an edge of the top spacer is aligned with an edge of the light-emitting layer, and an edge of the bottom spacer is aligned with the edge of the light-emitting layer; an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light-emitting layer, the top surface of the isolation structure is aligned with the top of the light-emitting layer, and the bottom surface of the isolation structure is above the bottom surface of the bottom spacer and below the light-emitting layer.

[0015] According to another aspect of several embodiments of the present disclosure, a micro-light emitting diode chip includes a plurality of micro-LEDs. At least one micro-LED among the plurality of micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the entire chip, and the plurality of micro-LEDs share the light emitting layer. The micro-light emitting diode chip further includes: a top spacer formed on the top surface of the light emitting layer; a bottom spacer formed on the bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, the top surface of the isolation structure is aligned with the top of the light emitting layer, and the bottom surface is below the bottom spacer.

[0016] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED among the plurality of micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light-emitting layer formed between the first type conductive layer and the second type conductive layer. The light-emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light-emitting layer. The micro-LED chip further includes: a top spacer formed on the top surface of the light-emitting layer; a bottom spacer formed on the bottom surface of the light-emitting layer, wherein an edge of the top spacer is aligned with an edge of the light-emitting layer, and an edge of the bottom spacer is aligned with the edge of the light-emitting layer; an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light-emitting layer, the top surface of the isolation structure is aligned with the top of the light-emitting layer, and the bottom surface of the isolation structure is aligned with the bottom surface of the bottom spacer.

[0017] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one of the plurality of micro-LEDs includes: a first-type conductive layer; a second-type conductive layer stacked on the first-type conductive layer; and a light-emitting layer formed between the first-type conductive layer and the second-type conductive layer. The light-emitting layer is continuously formed across the entire micro-LED chip, and the plurality of micro-LEDs share the light-emitting layer. The micro-LED chip further includes: an isolation structure formed between adjacent micro-LEDs, at least a portion of the isolation structure being formed in the light-emitting layer. The top surface of the isolation structure is above the light-emitting layer. The bottom surface of the isolation structure is aligned with the bottom of the light-emitting layer.

[0018] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED among the plurality of micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light-emitting layer formed between the first type conductive layer and the second type conductive layer. The light-emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light-emitting layer. The micro-LED chip further includes: a top spacer formed on the top surface of the light-emitting layer; a bottom spacer formed on the bottom surface of the light-emitting layer, wherein an edge of the top spacer is aligned with an edge of the light-emitting layer, and an edge of the bottom spacer is aligned with the edge of the light-emitting layer; an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light-emitting layer, the bottom surface of the isolation structure is aligned with the bottom surface of the light-emitting layer, and the top surface of the isolation structure is above the light-emitting layer and below the top surface of the top spacer.

[0019] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED among the plurality of micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light-emitting layer formed between the first type conductive layer and the second type conductive layer. The light-emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light-emitting layer. The micro-LED chip further includes: a top spacer formed on the top surface of the light-emitting layer; a bottom spacer formed on the bottom surface of the light-emitting layer, wherein an edge of the top spacer is aligned with an edge of the light-emitting layer, and an edge of the bottom spacer is aligned with the edge of the light-emitting layer; an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light-emitting layer, the bottom surface of the isolation structure is aligned with the bottom surface of the light-emitting layer, and the top surface of the isolation structure is aligned with the top surface of the top spacer.

[0020] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED among the plurality of micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light-emitting layer formed between the first type conductive layer and the second type conductive layer. The light-emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light-emitting layer. The micro-LED chip further includes: a top spacer formed on the top surface of the light-emitting layer; a bottom spacer formed on the bottom surface of the light-emitting layer, wherein an edge of the top spacer is aligned with an edge of the light-emitting layer, and an edge of the bottom spacer is aligned with the edge of the light-emitting layer; an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light-emitting layer, the bottom surface of the isolation structure is aligned with the bottom surface of the light-emitting layer, and the top surface of the isolation structure is above the top spacer.

[0021] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one of the plurality of micro-LEDs includes: a first-type conductive layer; a second-type conductive layer stacked on the first-type conductive layer; and a light-emitting layer formed between the first-type conductive layer and the second-type conductive layer. The light-emitting layer is continuously formed across the entire micro-LED chip and is shared by the plurality of micro-LEDs. An isolation structure is formed between adjacent micro-LEDs, with at least a portion of the isolation structure formed in the light-emitting layer. The top surface of the isolation structure is above the light-emitting layer, and the bottom surface of the isolation structure is below the light-emitting layer.

[0022] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED among the plurality of micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light-emitting layer formed between the first type conductive layer and the second type conductive layer. The light-emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light-emitting layer. The micro-LED chip further includes: a top spacer formed on the top surface of the light-emitting layer; a bottom spacer formed on the bottom surface of the light-emitting layer, wherein an edge of the top spacer is aligned with an edge of the light-emitting layer, and an edge of the bottom spacer is aligned with the edge of the light-emitting layer; an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light-emitting layer, the top surface of the isolation structure is above the light-emitting layer and below the top surface of the top spacer, and the bottom surface of the isolation structure is below the bottom of the light-emitting layer.

[0023] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED among the plurality of micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light-emitting layer formed between the first type conductive layer and the second type conductive layer. The light-emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light-emitting layer. The micro-LED chip further includes: a top spacer formed on the top surface of the light-emitting layer; a bottom spacer formed on the bottom surface of the light-emitting layer, wherein an edge of the top spacer is aligned with an edge of the light-emitting layer, and an edge of the bottom spacer is aligned with the edge of the light-emitting layer; an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light-emitting layer, the top surface of the isolation structure is above the light-emitting layer and below the top surface of the top spacer, and the bottom surface of the isolation structure is below the bottom of the light-emitting layer and above the bottom surface of the bottom spacer.

[0024] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED among the plurality of micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light-emitting layer formed between the first type conductive layer and the second type conductive layer. The light-emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light-emitting layer. The micro-LED chip further includes: a top spacer formed on the top surface of the light-emitting layer; a bottom spacer formed on the bottom surface of the light-emitting layer, wherein an edge of the top spacer is aligned with an edge of the light-emitting layer, and an edge of the bottom spacer is aligned with the edge of the light-emitting layer; an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light-emitting layer, a top surface of the isolation structure is above the light-emitting layer and below a top surface of the top spacer, and a bottom surface of the isolation structure is aligned with a bottom surface of the bottom spacer.

[0025] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED among the plurality of micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light-emitting layer formed between the first type conductive layer and the second type conductive layer. The light-emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light-emitting layer. The micro-LED chip further includes: a top spacer formed on the top surface of the light-emitting layer; a bottom spacer formed on the bottom surface of the light-emitting layer, wherein an edge of the top spacer is aligned with an edge of the light-emitting layer, and an edge of the bottom spacer is aligned with the edge of the light-emitting layer; an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light-emitting layer, a top surface of the isolation structure is above the light-emitting layer and below the top surface of the top spacer, and a bottom surface of the isolation structure is below the bottom spacer.

[0026] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED among the plurality of micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light-emitting layer formed between the first type conductive layer and the second type conductive layer. The light-emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light-emitting layer. The micro-LED chip further includes: a top spacer formed on the top surface of the light-emitting layer; a bottom spacer formed on the bottom surface of the light-emitting layer, wherein an edge of the top spacer is aligned with an edge of the light-emitting layer, and an edge of the bottom spacer is aligned with the edge of the light-emitting layer; an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light-emitting layer, the bottom surface of the isolation structure is below the light-emitting layer and above the bottom surface of the bottom spacer, and the top surface of the isolation structure is aligned with the top surface of the top spacer.

[0027] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED among the plurality of micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; a light-emitting layer formed between the first type conductive layer and the second type conductive layer. The light-emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light-emitting layer. The micro-LED chip further includes: a top spacer formed on the top surface of the light-emitting layer; a bottom spacer formed on the bottom surface of the light-emitting layer, wherein an edge of the top spacer is aligned with an edge of the light-emitting layer, and an edge of the bottom spacer is aligned with the edge of the light-emitting layer; an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light-emitting layer, the bottom surface of the isolation structure is below the light-emitting layer and above the bottom surface of the bottom spacer, and the top surface of the isolation structure is above the top spacer.

[0028] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one of the plurality of micro-LEDs includes: a first-type conductive layer; a second-type conductive layer stacked on the first-type conductive layer; and a light-emitting layer formed between the first-type conductive layer and the second-type conductive layer. The light-emitting layer is continuously formed across the entire micro-LED chip and is shared by the plurality of micro-LEDs. An isolation structure is formed between adjacent micro-LEDs, and at least a portion of the isolation structure is formed in the light-emitting layer. The bottom surface of the isolation structure is aligned with the bottom of the light-emitting layer, and the top surface of the isolation structure is aligned with the top surface of the light-emitting layer.

[0029] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED among the plurality of micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light-emitting layer formed between the first type conductive layer and the second type conductive layer. The light-emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light-emitting layer. The micro-LED chip further includes: a top spacer formed on the top surface of the light-emitting layer; a bottom spacer formed on the bottom surface of the light-emitting layer, wherein an edge of the top spacer is aligned with an edge of the light-emitting layer, and an edge of the bottom spacer is aligned with the edge of the light-emitting layer; an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light-emitting layer, the bottom surface of the isolation structure is aligned with the bottom surface of the bottom spacer, and the top surface of the isolation structure is aligned with the top surface of the top spacer.

[0030] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED among the plurality of micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light-emitting layer formed between the first type conductive layer and the second type conductive layer. The light-emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light-emitting layer. The micro-LED chip further includes: a top spacer formed on the top surface of the light-emitting layer; a bottom spacer formed on the bottom surface of the light-emitting layer, wherein an edge of the top spacer is aligned with an edge of the light-emitting layer, and an edge of the bottom spacer is aligned with the edge of the light-emitting layer; an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light-emitting layer, a top surface of the isolation structure is aligned with a top surface of the top spacer, and a bottom surface of the isolation structure is below the bottom spacer.

[0031] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED among the plurality of micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light-emitting layer formed between the first type conductive layer and the second type conductive layer. The light-emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light-emitting layer. The micro-LED chip further includes: a top spacer formed on the top surface of the light-emitting layer; a bottom spacer formed on the bottom surface of the light-emitting layer, wherein an edge of the top spacer is aligned with an edge of the light-emitting layer, and an edge of the bottom spacer is aligned with the edge of the light-emitting layer; an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light-emitting layer, the bottom surface of the isolation structure is aligned with the bottom surface of the bottom spacer, and the top surface of the isolation structure is above the top spacer.

[0032] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED among the plurality of micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light-emitting layer formed between the first type conductive layer and the second type conductive layer. The light-emitting layer is continuously formed on the entire micro-LED chip, and the plurality of micro-LEDs share the light-emitting layer. The micro-LED chip further includes: a top spacer formed on the top surface of the light-emitting layer; a bottom spacer formed on the bottom surface of the light-emitting layer, wherein an edge of the top spacer is aligned with an edge of the light-emitting layer, and an edge of the bottom spacer is aligned with the edge of the light-emitting layer; an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light-emitting layer, the bottom surface of the isolation structure is below the bottom spacer, and the top surface of the isolation structure is above the top spacer.

[0033] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one of the plurality of micro-LEDs includes: a first-type conductive layer; a second-type conductive layer stacked on the first-type conductive layer; and a light-emitting layer formed between the first-type conductive layer and the second-type conductive layer. The light-emitting layer is continuously formed across the entire micro-LED chip and is shared by the plurality of micro-LEDs. The bottom edge of the second-type conductive layer is aligned with the top edge of the first-type conductive layer.

[0034] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one of the plurality of micro-LEDs includes: a first-type conductive layer; a second-type conductive layer stacked on the first-type conductive layer; and a light-emitting layer formed between the first-type conductive layer and the second-type conductive layer. The light-emitting layer is formed continuously across the entire micro-LED chip and is shared by the plurality of micro-LEDs. The outline of the second-type conductive layer, projected vertically onto the top surface of the first-type conductive layer, is surrounded by the edge of the first-type conductive layer.

[0035] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one of the plurality of micro-LEDs includes: a first-type conductive layer; a second-type conductive layer stacked on the first-type conductive layer; and a light-emitting layer formed between the first-type conductive layer and the second-type conductive layer. The light-emitting layer is formed continuously across the entire micro-LED chip and is shared by the plurality of micro-LEDs. The outline of the first-type conductive layer, projected vertically onto the bottom surface of the second-type conductive layer, is surrounded by the edge of the second-type conductive layer.

[0036] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one of the plurality of micro-LEDs includes: a first-type conductive layer; a second-type conductive layer stacked on the first-type conductive layer; and a light-emitting layer formed between the first-type conductive layer and the second-type conductive layer, with at least a portion of the light-emitting layer formed between adjacent micro-LEDs. The micro-LED chip further includes a metal layer formed on the light-emitting layer located between the adjacent micro-LEDs.

[0037] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one micro-LED includes: a first-type conductive layer; a second-type conductive layer stacked on the first-type conductive layer; and a light-emitting layer formed between the first-type conductive layer and the second-type conductive layer. The light-emitting layer extends along a horizontal plane away from the top edge of the first-type conductive layer and the bottom edge of the second-type conductive layer, such that an edge of the light-emitting layer does not contact the top edge of the first-type conductive layer and the bottom edge of the second-type conductive layer, and the bottom edge of the second-type conductive layer is aligned with the top edge of the first-type conductive layer. The micro-LED chip further includes a metal layer formed on the light-emitting layer between adjacent micro-LEDs.

[0038] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one of the plurality of micro-LEDs includes: a first-type conductive layer; a second-type conductive layer stacked on the first-type conductive layer; and a light-emitting layer formed between the first-type conductive layer and the second-type conductive layer. The light-emitting layer extends along a horizontal plane away from the top edge of the first-type conductive layer and the bottom edge of the second-type conductive layer, such that an edge of the light-emitting layer does not contact the top edge of the first-type conductive layer and the bottom edge of the second-type conductive layer, and a vertical projection of the second-type conductive layer onto the top surface of the first-type conductive layer is surrounded by the edge of the first-type conductive layer. The micro-LED chip further includes a metal layer formed on a portion of the light-emitting layer extending from the top edge of the first-type conductive layer.

[0039] According to another aspect of several embodiments of the present disclosure, a micro-LED chip includes a plurality of micro-LEDs. At least one of the plurality of micro-LEDs includes: a first-type conductive layer; a second-type conductive layer stacked on the first-type conductive layer; and a light-emitting layer formed between the first-type conductive layer and the second-type conductive layer. The light-emitting layer extends along a horizontal plane away from the top edge of the first-type conductive layer and the bottom edge of the second-type conductive layer, such that an edge of the light-emitting layer does not contact the top edge of the first-type conductive layer and the bottom edge of the second-type conductive layer. The outline of the first-type conductive layer, vertically projected onto the bottom surface of the second-type conductive layer, is surrounded by the bottom edge of the second-type conductive layer. The micro-LED chip further includes a metal layer formed on a portion of the light-emitting layer extending from the second-type conductive layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1A is a cross-sectional view of a micro light emitting diode structure according to a first embodiment of the present disclosure.

[0041] Figure 1B is a cross-sectional view of a micro light emitting diode structure according to a first variation of the first embodiment of the present disclosure.

[0042] Figure 1C is a cross-sectional view of a micro light emitting diode structure according to a second variation of the first embodiment of the present disclosure.

[0043] Figure 1D is a cross-sectional view of a micro light emitting diode structure according to a third variation of the first embodiment of the present disclosure.

[0044] Figure 2A is a cross-sectional view of a micro light emitting diode structure according to a second embodiment of the present disclosure.

[0045] Figure 2B is a cross-sectional view of a micro light emitting diode structure according to a first variation of the second embodiment of the present disclosure.

[0046] Figure 2C is a cross-sectional view of a micro light emitting diode structure according to a second variation of the second embodiment of the present disclosure.

[0047] Figure 2D is a cross-sectional view of a micro light emitting diode structure according to a third variation of the second embodiment of the present disclosure.

[0048] Figure 3A is a cross-sectional view of a micro light emitting diode structure according to a third embodiment of the present disclosure.

[0049] Figure 3B is a cross-sectional view of a micro light emitting diode structure according to a first variation of the third embodiment of the present disclosure.

[0050] Figure 3C is a cross-sectional view of a micro light emitting diode structure according to a second variation of the third embodiment of the present disclosure.

[0051] Figure 3D is a cross-sectional view of a micro light emitting diode structure according to a third variation of the third embodiment of the present disclosure.

[0052] Figure 4A is a cross-sectional view of a micro light emitting diode structure according to a fourth embodiment of the present disclosure.

[0053] Figure 4B is a cross-sectional view of a micro light emitting diode structure according to a first variation of the fourth embodiment of the present disclosure.

[0054] Figure 4C is a cross-sectional view of a micro light emitting diode structure according to a second variation of the fourth embodiment of the present disclosure.

[0055] Figure 4D is a cross-sectional view of a micro light emitting diode structure according to a third variation of the fourth embodiment of the present disclosure.

[0056] Figure 5A is a cross-sectional view of a micro light emitting diode structure according to a fifth embodiment of the present disclosure.

[0057] Figure 5B is a cross-sectional view of a micro light emitting diode structure according to a first variation of the fifth embodiment of the present disclosure.

[0058] Figure 5Cis a cross-sectional view of a micro light emitting diode structure according to a second variation of the fifth embodiment of the present disclosure.

[0059] Figure 5D is a cross-sectional view of a micro light emitting diode structure according to a third variation of the fifth embodiment of the present disclosure.

[0060] Figure 6A is a cross-sectional view of a micro light emitting diode chip according to a sixth embodiment of the present disclosure.

[0061] Figure 6B is a cross-sectional view of a micro light emitting diode chip according to a first variation of the sixth embodiment of the present disclosure.

[0062] Figure 6C is a cross-sectional view of a micro light emitting diode chip according to a second variation of the sixth embodiment of the present disclosure.

[0063] Figure 6D is a cross-sectional view of a micro light emitting diode chip according to a third variation of the sixth embodiment of the present disclosure.

[0064] Figure 6E is a cross-sectional view of a micro light emitting diode chip according to a fourth variation of the sixth embodiment of the present disclosure.

[0065] Figure 6F is a cross-sectional view of a micro light emitting diode chip according to a fifth variation of the sixth embodiment of the present disclosure.

[0066] Figure 7 is a cross-sectional view of a micro light emitting diode chip according to a seventh embodiment of the present disclosure.

[0067] Figure 8A is a cross-sectional view of a micro light emitting diode chip according to an eighth embodiment of the present disclosure.

[0068] Figure 8B is a cross-sectional view of a micro light emitting diode chip according to a first variation of the eighth embodiment of the present disclosure.

[0069] Figure 8C is a cross-sectional view of a micro light emitting diode chip according to a second variation of the eighth embodiment of the present disclosure.

[0070] Figure 9A is a cross-sectional view of a micro light emitting diode chip according to a ninth embodiment of the present disclosure.

[0071] Figure 9B is a cross-sectional view of a micro light emitting diode chip according to a first variation of the ninth embodiment of the present disclosure.

[0072] Figure 9C is a cross-sectional view of a micro light emitting diode chip according to a second variation of the seventh embodiment of the present disclosure.

[0073] Figure 10A is a cross-sectional view of a micro light emitting diode chip according to a tenth embodiment of the present disclosure.

[0074] Figure 10B is a cross-sectional view of a micro light emitting diode chip according to a first variation of the tenth embodiment of the present disclosure.

[0075] Figure 10C is a cross-sectional view of a micro light emitting diode chip according to a second variation of the tenth embodiment of the present disclosure.

[0076] Figure 11A is a cross-sectional view of a micro light emitting diode chip according to an eleventh embodiment of the present disclosure.

[0077] Figure 11B is a cross-sectional view of a micro light emitting diode chip according to a first variation of the eleventh embodiment of the present disclosure.

[0078] Figure 11C is a cross-sectional view of a micro light emitting diode chip according to a second variation of the eleventh embodiment of the present disclosure.

[0079] Figure 11D is a cross-sectional view of a micro light emitting diode chip according to a third variation of the eleventh embodiment of the present disclosure.

[0080] Figure 12A is a cross-sectional view of a micro light emitting diode chip according to a twelfth embodiment of the present disclosure.

[0081] Figure 12B is a cross-sectional view of a micro light emitting diode chip according to a first variation of the twelfth embodiment of the present disclosure.

[0082] Figure 12C is a cross-sectional view of a micro light emitting diode chip according to a second variation of the twelfth embodiment of the present disclosure.

[0083] Figure 12D is a cross-sectional view of a micro light emitting diode chip according to a third variation of the twelfth embodiment of the present disclosure.

[0084] Figure 13A is a cross-sectional view of a micro light emitting diode chip according to a thirteenth embodiment of the present disclosure.

[0085] Figure 13B is a cross-sectional view of a micro light emitting diode chip according to a variation of the thirteenth embodiment of the present disclosure.

[0086] Figure 14A is a cross-sectional view of a micro light emitting diode chip according to a fourteenth embodiment of the present disclosure.

[0087] Figure 14B is a cross-sectional view of a micro light emitting diode chip according to a variation of the fourteenth embodiment of the present disclosure.

[0088] Figure 15A is a cross-sectional view of a micro light emitting diode chip according to a fifteenth embodiment of the present disclosure.

[0089] Figure 15B is a cross-sectional view of a micro light emitting diode chip according to a variation of the fifteenth embodiment of the present disclosure.

[0090] Figure 16A is a cross-sectional view of a micro light emitting diode chip according to a sixteenth embodiment of the present disclosure.

[0091] Figure 16B is a cross-sectional view of a micro light emitting diode chip according to a variation of the sixteenth embodiment of the present disclosure.

[0092] Figure 17A is a cross-sectional view of a micro light emitting diode chip according to a seventeenth embodiment of the present disclosure.

[0093] Figure 17B is a cross-sectional view of a micro light emitting diode chip according to a variation of the seventeenth embodiment of the present disclosure.

[0094] Figure 18 is a cross-sectional view of a micro light emitting diode structure according to a comparative example. DETAILED DESCRIPTION

[0095] The following provides a detailed description of the present disclosure in conjunction with the specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present disclosure. The scope of protection of the present disclosure covers changes made to structure, method or function based on these embodiments by those skilled in the art.

[0096] In order to facilitate the presentation of the drawings of the present disclosure, the dimensions of certain structures or parts may be exaggerated relative to other structures or parts. Therefore, the drawings of this application are only intended to illustrate the basic structure of the subject matter of this application. The same or similar components in different drawings are represented by the same component symbols unless otherwise specified.

[0097] In addition, terms indicating relative spatial positions, such as "front," "rear," "upper," "lower," "above," "below," etc., are used herein to explain the relationship between an element or feature depicted in a drawing and another element or feature therein. Terms indicating relative spatial positions may refer to positions when the device is in use or operation in addition to those shown in the drawings. For example, if the device shown in the drawings is turned over, an element described as being "below" or "beneath" another element or feature would be "above" the other element or feature. Thus, the illustrated term "below" can include both above and below positions. The device can be oriented in other ways (rotated 90 degrees or facing another direction), and spatially relative descriptive terms appearing herein should be interpreted accordingly. When a component or layer is referred to as being "above" or "connected to" another component or layer, it can be directly above or directly connected to the other component or layer, or there may be intervening components or layers.

[0098] First embodiment

[0099] Figure 1A FIG is a cross-sectional view of a micro-LED structure 1000 according to a first embodiment of the present disclosure. Figure 1A As shown, micro-LED structure 1000 includes a first-type conductive layer 101, a second-type conductive layer 102 stacked on first-type conductive layer 101, and a light-emitting layer 103 formed between first-type conductive layer 101 and second-type conductive layer 102. Light-emitting layer 103 extends along a horizontal plane away from a top edge 101a of first-type conductive layer 101 and a bottom edge 102a of second-type conductive layer 102, such that an edge 103a of light-emitting layer 103 does not contact top edge 101a of first-type conductive layer 101 or bottom edge 102a of second-type conductive layer 102. Bottom edge 102a of second-type conductive layer 102 is aligned with top edge 101a of first-type conductive layer 101.

[0100] The first type conduction layer 101 and the second type conduction layer 102 may be any type of conduction layer. In one embodiment, the first type conduction layer 101 may be an n-type conduction semiconductor layer including one or more n-type dopants, and the second type conduction layer 102 may be a p-type conduction semiconductor layer including one or more p-type dopants. In another embodiment, the first type conduction layer 101 may be a p-type conduction semiconductor layer, and the second type conduction layer 102 may be an n-type conduction semiconductor layer. Figure 1A As shown, the top area of the first type conductive layer 101 is larger than the bottom area of the first type conductive layer 101 , and the top area of the second type conductive layer 102 is smaller than the bottom area of the second type conductive layer 102 .

[0101] The light-emitting layer 103 may have a quantum well structure in which quantum well layers and barrier layers are alternately stacked. In one embodiment, the light-emitting layer 103 may include a pair of quantum well layers and a barrier layer interposed between the quantum well layers. In another embodiment, the light-emitting layer 103 may include multiple pairs of quantum well layers and barrier layers interposed between adjacent quantum well layers. These quantum well layers may be made of, for example, gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs), indium gallium arsenide (InGaAs), gallium arsenic phosphide (GaAsP), aluminum gallium indium phosphide (AlGaInP), gallium indium arsenide phosphide (GaInAsP), gallium indium phosphide (GaInP), aluminum indium phosphide (AlInP), gallium phosphide (GaP), indium phosphide (InP), or the like. These barrier layers may be made of, for example, gallium arsenide, aluminum gallium arsenide, indium gallium arsenide, aluminum indium gallium phosphide, indium gallium arsenide phosphide, indium gallium arsenide phosphide, aluminum indium phosphide, gallium phosphide, indium phosphide, or the like.

[0102] like Figure 1A As shown, micro-LED structure 1000 also includes a top spacer 107 formed on the top surface 103b of light-emitting layer 103 and a bottom spacer 108 formed on the bottom surface 103c of light-emitting layer 103. Top spacer 107 and bottom spacer 108 can be made of gallium arsenide, aluminum gallium arsenide, indium gallium arsenide, aluminum indium gallium phosphide, indium gallium arsenide phosphide, indium gallium arsenide phosphide, aluminum indium phosphide, gallium phosphide, indium phosphide, or the like. Top spacer 107 and bottom spacer 108 are configured to control carrier injection efficiency to improve micro-LED performance and reliability. Edges 107a of top spacer 107 and 108a of bottom spacer 108 are aligned with edge 103a of light-emitting layer 103. The thickness of top spacer 107 is greater than the thickness of light-emitting layer 103. The thickness of bottom spacer 108 is greater than the thickness of light-emitting layer 103.

[0103] exist Figure 1A In the illustrated embodiment, the micro-LED structure 1000 further includes a reflective structure 104 surrounding the first-type conductive layer 101. The reflective structure 104 is attached to the sidewall surface 101b of the first-type conductive layer 101. The reflective structure 104 on the sidewall of the first-type conductive layer 101 is inclined relative to the surface 110a of the substrate 110. The inclination angle of the reflective structure 104 relative to the surface 110a of the substrate 110 is approximately 30 degrees to approximately 75 degrees. The reflective structure 104 on the sidewall surface 101b of the first-type conductive layer 101 is made of an ODR (omnidirectional reflector) structure or a DBR (distributed Bragg reflector) structure. The reflective structure 104 is configured to collect light onto the second-type conductive layer 102.

[0104] exist Figure 1AIn the illustrated embodiment, the micro LED structure 1000 further includes a bottom connection structure 105 formed below the first type conductive layer 101 and electrically connected to the first type conductive layer 101. The bottom connection structure 105 may be formed of a conductive material (e.g., metal) and may be reflective.

[0105] like Figure 1A As shown, micro LED structure 1000 further includes a substrate 110 below first-type conductive layer 101, and is electrically connected to bottom connection structure 105 via connection pads 106 in substrate 110. In some embodiments, substrate 110 can be made of one or more materials from the III-V group, such as gallium nitride (GaN). In some other embodiments, substrate 110 can include an integrated circuit (IC). Connection pads 106 can be made of a conductive material, such as copper (Cu).

[0106] like Figure 1A As shown, the micro LED structure 1000 further includes an isolation layer 109 surrounding the first type conductive layer 101 and below the light emitting layer 103. The isolation layer 109 may be made of a light absorbing material including, for example, impurity-doped silicon dioxide (SiO2) or silicon nitride (Si3N4).

[0107] like Figure 1A As shown, the micro LED structure 1000 further includes a micro lens 111 formed on the second type conductive layer 102 and on the top surface 107 b of the top spacer 107 . The micro lens 111 is configured to converge the light emitted by the light emitting layer 103 .

[0108] First variant of the first embodiment

[0109] Figure 1B is a cross-sectional view of a micro light emitting diode structure 1001 according to a first variation of the first embodiment of the present disclosure. Figure 1B The embodiment shown is Figure 1A The embodiment shown is different in that the sidewall surface 101b of the first type conductive layer 101 is curved, and the reflective structure 1041 formed on the sidewall surface 101b of the first type conductive layer 101 has a curved surface 104a. In addition to the reflective structure 1041, the embodiment shown in FIG. Figure 1B The components of the micro-LED structure 1001 are shown in FIG. Figure 1A The components of the micro LED structure 1000 are the same, so the detailed description of these components will not be repeated.

[0110] Second variant of the first embodiment

[0111] Figure 1Cis a cross-sectional view of a micro light emitting diode structure 1002 according to a second variation of the first embodiment of the present disclosure. Figure 1C The embodiment shown is Figure 1A The embodiment shown differs in that a reflective structure 1042 is attached to the bottom surface 101c of the first type conductive layer 101. The reflective structure 1042 is conductive. A bottom connection structure 105 is formed at the bottom of the reflective structure 1042 and is electrically connected to the reflective structure 1042. The reflective structure 1042 on the bottom surface 101c of the first type conductive layer 101 can be made of metal. In addition to the reflective structure 1042, the bottom connection structure 105 is also shown. Figure 1C The components of the micro-LED structure 1002 are shown in FIG. Figure 1A The components of the micro LED structure 1000 are the same, so the detailed description of these components will not be repeated.

[0112] Third variant of the first embodiment

[0113] Figure 1D is a cross-sectional view of a micro light emitting diode structure 1003 according to a third variation of the first embodiment of the present disclosure. Figure 1D The embodiment shown is Figure 1A The embodiment shown is different in that a reflective structure 1043 is attached to both the sidewall surface 101b and the bottom surface 101c of the first type conductive layer 101. The reflective structure 1043 is conductive. A bottom connection structure 105 is formed at the bottom of the reflective structure 1043 and is electrically connected to the reflective structure 1043. In addition to the reflective structure 1043, the bottom connection structure 105 is also shown. Figure 1D The components of the micro-LED structure 1003 are shown in FIG. Figure 1A The components of the micro LED structure 1000 are the same, so the detailed description of these components will not be repeated.

[0114] Second embodiment

[0115] Figure 2A is a cross-sectional view of a micro light emitting diode structure 2000 according to a second embodiment of the present disclosure. Figure 2A The second embodiment shown is Figure 1A The difference from the first embodiment shown is that the bottom edge 102a of the second type conductive layer 102 is not aligned with the top edge 101a of the first type conductive layer 101. Instead, the outline of the second type conductive layer 102, vertically projected onto the top surface 101d of the first type conductive layer 101, is surrounded by the top edge 101a of the first type conductive layer 101. Figure 2A The components of the micro LED structure 2000 of the second embodiment are Figure 1A The components of the micro LED structure 1000 of the first embodiment are the same, and thus detailed descriptions of these components will not be repeated.

[0116] First variant of the second embodiment

[0117] Figure 2B is a cross-sectional view of a micro light emitting diode structure 2001 according to a first variation of the second embodiment of the present disclosure. Figure 2B The embodiment shown is Figure 2A The embodiment shown is different in that the sidewall surface 101b of the first type conductive layer 101 is curved, and the reflective structure 1041 formed on the sidewall surface 101b of the first type conductive layer 101 has a curved surface 104a. In addition to the reflective structure 1041, the embodiment shown in FIG. Figure 2B The components of the micro-LED structure 2001 are shown in FIG. Figure 2A The components of the micro LED structure 2000 are the same, so the detailed description of these components will not be repeated.

[0118] Second variant of the second embodiment

[0119] Figure 2C is a cross-sectional view of a micro light emitting diode structure 2002 according to a second variation of the second embodiment of the present disclosure. Figure 2C The embodiment shown is Figure 2A The embodiment shown is different in that a reflective structure 1042 is attached to the bottom surface 101c of the first type conductive layer 101. The reflective structure 1042 is conductive. A bottom connection structure 105 is formed at the bottom of the reflective structure 1042 and is electrically connected to the bottom of the reflective structure 1042. The reflective structure 1042 on the bottom surface 101c of the first type conductive layer 101 can be made of metal. In addition to the reflective structure 1042, the bottom connection structure 105 is electrically connected to the bottom of the reflective structure 1042. Figure 2C The components of the micro-LED structure 2002 are shown in FIG. Figure 2A The components of the micro LED structure 2000 are the same, so the detailed description of these components will not be repeated.

[0120] Third variant of the second embodiment

[0121] Figure 2D is a cross-sectional view of a micro light emitting diode structure 2003 according to a third variation of the second embodiment of the present disclosure. Figure 2D The embodiment shown is Figure 2A The embodiment shown is different in that a reflective structure 1043 is attached to both the sidewall surface 101b and the bottom surface 101c of the first type conductive layer 101. The reflective structure 1043 is conductive. A bottom connection structure 105 is formed at the bottom of the reflective structure 1043 and is electrically connected to the reflective structure 1043. In addition to the reflective structure 1043, the bottom connection structure 105 is also shown. Figure 2DThe components of the micro-LED structure 2003 are shown in FIG. Figure 2A The components of the micro LED structure 2000 are the same, so the detailed description of these components will not be repeated.

[0122] Third embodiment

[0123] Figure 3A is a cross-sectional view of a micro light emitting diode structure 3000 according to a third embodiment of the present disclosure. Figure 3A The third embodiment shown is Figure 1A The difference from the first embodiment shown is that the bottom edge 102a of the second type conductive layer 102 is not aligned with the top edge 101a of the first type conductive layer 101. Instead, the outline of the first type conductive layer 101 vertically projected onto the bottom surface 102b of the second type conductive layer 102 is surrounded by the bottom edge 102a of the second type conductive layer 102. Figure 3A The components of the micro LED structure 3000 of the third embodiment are Figure 1A The components of the micro LED structure 1000 of the first embodiment are the same, and thus detailed descriptions of these components will not be repeated.

[0124] First variant of the third embodiment

[0125] Figure 3B is a cross-sectional view of a micro light emitting diode structure 3001 according to a first variation of the third embodiment of the present disclosure. Figure 3B The embodiment shown is Figure 3A The embodiment shown is different in that the sidewall surface 101b of the first type conductive layer 101 is curved, and the reflective structure 1041 formed on the sidewall surface 101b of the first type conductive layer 101 has a curved surface 104a. Figure 3B The components of the micro-LED structure 3001 are shown in FIG. Figure 3A The components of the micro LED structure 3000 are the same, so the detailed description of these components will not be repeated.

[0126] Second variant of the third embodiment

[0127] Figure 3C is a cross-sectional view of a micro light emitting diode structure 3002 according to a second variation of the third embodiment of the present disclosure. Figure 3C The embodiment shown is Figure 3AThe embodiment shown is different in that a reflective structure 1042 is attached to the bottom surface 101c of the first type conductive layer 101. The reflective structure 1042 is conductive. A bottom connection structure 105 is formed at the bottom of the reflective structure 1042 and is electrically connected to the bottom of the reflective structure 1042. The reflective structure 1042 on the bottom surface 101c of the first type conductive layer 101 can be made of metal. In addition to the reflective structure 1042, the bottom connection structure 105 is electrically connected to the bottom of the reflective structure 1042. Figure 3C The components of the micro-LED structure 3002 are shown in FIG. Figure 3A The components of the micro LED structure 3000 are the same, so the detailed description of these components will not be repeated.

[0128] Third variant of the third embodiment

[0129] Figure 3D is a cross-sectional view of a micro light emitting diode structure 3003 according to a third variation of the third embodiment of the present disclosure. Figure 3D The embodiment shown is Figure 3A The embodiment shown is different in that the reflective structure 1043 is attached to both the sidewall surface 101b and the bottom surface 101c of the first type conductive layer 101. The reflective structure 1043 is conductive. The bottom connection structure 105 is formed at the bottom of the reflective structure 1043 and is electrically connected to the reflective structure 1043. In addition to the reflective structure 1042, the bottom connection structure 105 is also electrically connected to the reflective structure 1043. Figure 3D The components of the micro-LED structure 3003 are shown in FIG. Figure 3A The components of the micro LED structure 3000 are the same, so the detailed description of these components will not be repeated.

[0130] Fourth Implementation Plan

[0131] Figure 4A is a cross-sectional view of a micro light emitting diode structure 4000 according to a fourth embodiment of the present disclosure. Figure 4A The fourth embodiment shown is Figure 3AThe third embodiment shown differs in that the light-emitting layer 103 extends along a horizontal plane away from the top edge 101a of the first-type conductive layer 101, and the edge 103a of the light-emitting layer 103 is aligned with the bottom edge 102a of the second-type conductive layer 102. Furthermore, the micro-LED structure 4000 further includes a top isolation layer 114 surrounding the light-emitting layer 103. The top isolation layer 114 can be made of one or more electrically insulating dielectric materials, such as silicon dioxide, silicon nitride, aluminum oxide (Al2O3), titanium dioxide (TiO2), hafnium dioxide (HfO2), aluminum nitride (AlN), or the like. The top isolation layer 114 is configured to isolate the micro-LED structure 4000 from adjacent micro-LED structures (not shown). A microlens 111 is formed on the second-type conductive layer 102 and on the top surface 114a of the isolation layer 114. Figure 4A The other components of the micro-LED structure 4000 of the fourth embodiment are Figure 3A The components of the micro LED structure 3000 of the first embodiment are the same, and thus detailed descriptions of these components will not be repeated.

[0132] First variant of the fourth embodiment

[0133] Figure 4B is a cross-sectional view of a micro light emitting diode structure 4001 according to a first variation of the fourth embodiment of the present disclosure. Figure 4B The embodiment shown is Figure 4A The embodiment shown is different in that the sidewall surface 101b of the first type conductive layer 101 is curved, and the reflective structure 1041 is formed on the sidewall surface 101b of the first type conductive layer 101 and has a curved surface 104a. Figure 4B The components of the micro-LED structure 4001 are shown in FIG. Figure 4A The components of the micro-LED structure 4000 are the same, so the detailed description of these components will not be repeated.

[0134] Second variant of the fourth embodiment

[0135] Figure 4C is a cross-sectional view of a micro light emitting diode structure 4002 according to a second variation of the fourth embodiment of the present disclosure. Figure 4C The embodiment shown is Figure 4AThe embodiment shown is different in that a reflective structure 1042 is attached to the bottom surface 101c of the first type conductive layer 101. The reflective structure 1042 is conductive. A bottom connection structure 105 is formed at the bottom of the reflective structure 1042 and is electrically connected to the bottom of the reflective structure 1042. The reflective structure 1042 on the bottom surface 101c of the first type conductive layer 101 can be made of metal. In addition to the reflective structure 1042, the bottom connection structure 105 is electrically connected to the bottom of the reflective structure 1042. Figure 4C The components of the micro-LED structure 4002 are shown in FIG. Figure 4A The components of the micro-LED structure 4000 are the same, so the detailed description of these components will not be repeated.

[0136] Third variant of the fourth embodiment

[0137] Figure 4D is a cross-sectional view of a micro light emitting diode structure 4003 according to a third variation of the fourth embodiment of the present disclosure. Figure 4D The embodiment shown is Figure 4A The embodiment shown is different in that the reflective structure 1043 is attached to both the sidewall surface 101b and the bottom surface 101c of the first type conductive layer 101. The reflective structure 1043 is conductive. The bottom connection structure 105 is formed at the bottom of the reflective structure 1043 and is electrically connected to the reflective structure 1043. In addition to the reflective structure 1042, the bottom connection structure 105 is also electrically connected to the reflective structure 1043. Figure 4D The components of the micro-LED structure 4003 are shown in FIG. Figure 4A The components of the micro-LED structure 4000 are the same, so the detailed description of these components will not be repeated.

[0138] Fifth Implementation Plan

[0139] Figure 5A is a cross-sectional view of a micro light emitting diode structure 5000 according to a fifth embodiment of the present disclosure. Figure 5A The fifth embodiment shown is Figure 2A The second embodiment shown differs in that the light-emitting layer 103 extends along a horizontal plane away from the bottom edge 102a of the second-type conductive layer 102, and the edge 103a of the light-emitting layer 103 is aligned with the top edge 101a of the first-type conductive layer 101. In addition, the micro-LED structure 4000 further includes a top isolation layer 114 surrounding the light-emitting layer 103. Microlenses 111 are formed on the second-type conductive layer 102 and on the top surface 114a of the isolation layer 114. Figure 5A The other components of the micro-LED structure 5000 of the fourth embodiment are Figure 2A The components of the micro LED structure 2000 of the second embodiment are the same, and thus detailed descriptions of these components will not be repeated.

[0140] First variant of the fifth embodiment

[0141] Figure 5B is a cross-sectional view of a micro light emitting diode structure 5001 according to a first variation of the fifth embodiment of the present disclosure. Figure 5B The embodiment shown is Figure 5A The embodiment shown is different in that the sidewall surface 101b of the first type conductive layer 101 is curved, and the reflective structure 1041 formed on the sidewall surface 101b of the first type conductive layer 101 has a curved surface 104a. In addition to the reflective structure 1041, the embodiment shown in FIG. Figure 5B The components of the micro-LED structure 5001 are shown in FIG. Figure 5A The components of the micro LED structure 5000 are the same, so the detailed description of these components will not be repeated.

[0142] Second variant of the fifth embodiment

[0143] Figure 5C is a cross-sectional view of a micro light emitting diode structure 5002 according to a second variation of the fifth embodiment of the present disclosure. Figure 5C The embodiment shown is Figure 5A The embodiment shown differs in that a reflective structure 1042 is attached to the bottom surface 101c of the first type conductive layer 101. The reflective structure 1042 is conductive. A bottom connection structure 105 is formed at the bottom of the reflective structure 1042 and is electrically connected to the bottom of the reflective structure 1042. The reflective structure 1042 on the bottom surface 101c of the first type conductive layer 101 is made of metal. In addition to the reflective structure 1042, the bottom connection structure 105 is electrically connected to the bottom of the reflective structure 1042. Figure 5C The components of the micro-LED structure 5002 are shown in FIG. Figure 5A The components of the micro LED structure 5000 are the same, so the detailed description of these components will not be repeated.

[0144] Third variant of the fifth embodiment

[0145] Figure 5D is a cross-sectional view of a micro light emitting diode structure 5003 according to a third variation of the fifth embodiment of the present disclosure. Figure 5D The embodiment shown is Figure 5A The embodiment shown is different in that the reflective structure 1043 is attached to both the sidewall surface 101b and the bottom surface 101c of the first type conductive layer 101. The reflective structure 1043 is conductive. The bottom connection structure 105 is formed at the bottom of the reflective structure 1043 and is electrically connected to the reflective structure 1043. In addition to the reflective structure 1042, the bottom connection structure 105 is also electrically connected to the reflective structure 1043. Figure 5D The components of the micro-LED structure 5003 are shown in FIG. Figure 5AThe components of the micro LED structure 5000 are the same, so the detailed description of these components will not be repeated.

[0146] Sixth Implementation Plan

[0147] Figure 6A FIG1 is a cross-sectional view of a micro LED chip 6000 according to a sixth embodiment of the present disclosure. Micro LED chip 6000 may include a plurality of micro-LEDs. At least one micro-LED included in micro LED chip 6000 may have any of the aforementioned micro LED structures 1000, 1001, ..., 3003.

[0148] exist Figure 6A In the embodiment shown, the micro-LED chip 6000 includes two micro-LEDs 610 and 620. Each of the micro-LEDs 610 and 620 includes the Figure 1A The micro-LED structure 1000 of the first embodiment is shown. Figure 6A in Figure 6A The micro-LEDs 610 and 620 in FIG. 1 are also referred to as micro-LEDs 610 ( 1000 ) and 620 ( 1000 ).

[0149] like Figure 6A As shown, each of micro-LEDs 610 (1000) and 620 (1000) includes a first-type conductive layer 101, a second-type conductive layer 102 stacked on the first-type conductive layer 101, and a light-emitting layer 103 formed between the first-type conductive layer 101 and the second-type conductive layer 102. The light-emitting layer 103 is continuously formed on the entire micro-LED chip 6000. The first and second micro-LEDs 610 (1000) and 620 (1000) share the light-emitting layer 103. The light-emitting layer 103 extends along a horizontal plane away from the top edge 101a of the first-type conductive layer 101 and the bottom edge 102a of the second-type conductive layer 102, so that the edge 103a of the light-emitting layer 103 does not contact the top edge 101a of the first-type conductive layer 101 and the bottom edge 102a of the second-type conductive layer 102. The bottom edge 102a of the second-type conductive layer 102 is aligned with the top edge 101a of the first-type conductive layer 101.

[0150] like Figure 6AAs shown, each of micro-LEDs 610 (1000) and 620 (1000) also includes a top spacer 107 formed on the top surface 103b of the light-emitting layer 103, and a bottom spacer 108 formed on the bottom surface 103c of the light-emitting layer 103. Both the top spacer 107 and the bottom spacer 108 are continuously formed on the entire micro-LED chip 6000 and are shared by the first and second micro-LEDs 610 (1000) and 620 (1000). The edge 107a of the top spacer 107 is aligned with the edge 103a of the light-emitting layer 103. The edge 108a of the bottom spacer 108 is aligned with the edge 103a of the light-emitting layer 103.

[0151] like Figure 6A As shown, the micro-LEDs 610 (1000) and 620 (1000) each also include a reflective structure 104 surrounding the first type conductive layer 101, a bottom connection structure 105 formed under the first type conductive layer 101, a connection pad 106 formed in the substrate 110, an isolation layer 109 surrounding the first type conductive layer 101 and under the light-emitting layer 103, a substrate 110 under the first type conductive layer 101 and electrically connected to the bottom connection structure 105 through the connection pad 106, and a microlens 111 formed on the second type conductive layer 102 and on the top surface 107b of the top spacer 107.

[0152] In addition to the light emitting layer 103, the top spacer 107 and the bottom spacer 108 continuously formed on the entire micro-LED chip 6000 and shared by the first and second micro-LEDs 610 (1000) and 620 (1000), Figure 6A The components of the first and second micro-LEDs 610 (1000) and 620 (1000) of the sixth embodiment are shown. Figure 1A The components of the micro-LED structure 1000 of the first embodiment are the same, and therefore, detailed descriptions of these components will not be repeated.

[0153] First variant of the sixth embodiment

[0154] Figure 6B is a cross-sectional view of a micro light emitting diode chip 6001 according to a first variation of the sixth embodiment of the present disclosure. Figure 6B The first variant of the sixth embodiment is shown with Figure 6A The difference of the sixth embodiment is that the micro-LEDs 610 and 620 of the micro-LED chip 6001 each include the Figure 1B The micro light-emitting diode structure 1001 of the first variant of the first embodiment. Figure 6BThe micro-LEDs 610 and 620 are also referred to as micro-LEDs 610 ( 1001 ) and 620 ( 1001 ).

[0155] More specifically, if Figure 6B As shown, the sidewall surface 101b of the first type conductive layer 101 is curved, and the reflective structure 1041 formed on the sidewall surface 101b of the first type conductive layer 101 has a curved surface 104a. Figure 6B The components of the micro-LED chip 6001 are shown in the figure Figure 6A The components of the micro LED chip 6000 are the same, so the detailed description of these components will not be repeated.

[0156] Second variant of the sixth embodiment

[0157] Figure 6C is a cross-sectional view of a micro light emitting diode chip 6002 according to a second variation of the sixth embodiment of the present disclosure. Figure 6C The second variant of the sixth embodiment is shown with Figure 6A The sixth embodiment shown is different in that the micro-LEDs 610 and 620 of the micro-LED chip 6002 each include the Figure 1C The micro light-emitting diode structure 1002 of the second variant of the first embodiment. Figure 6C The micro-LEDs 610 and 620 are referred to as micro-LEDs 610 ( 1002 ) and 620 ( 1002 ).

[0158] More specifically, if Figure 6C As shown, the reflective structure 1042 is attached to the bottom surface 101c of the first type conductive layer 101. The reflective structure 1042 is conductive. The bottom connection structure 105 is formed at the bottom of the reflective structure 1042 and is electrically connected to the bottom of the reflective structure 1042. The reflective structure 1042 on the bottom surface 101c of the first type conductive layer 01 can be made of metal. In addition to the reflective structure 1042, the bottom connection structure 105 is formed at the bottom of the reflective structure 1042 and is electrically connected to the bottom of the reflective structure 1042. Figure 6C The components of the micro-LED chip 6002 are shown in FIG. Figure 6A The components of the micro LED chip 6000 are the same, so the detailed description of these components will not be repeated.

[0159] Third variant of the sixth embodiment

[0160] Figure 6D is a cross-sectional view of a micro light emitting diode chip 6003 according to a third variation of the sixth embodiment of the present disclosure. Figure 6D The embodiment shown is Figure 6AThe embodiment shown differs in that the micro-LEDs 610 and 620 of the micro-LED chip 6003 each include the Figure 1D The micro light emitting diode structure 1003 of the third variant of the first embodiment. Figure 6C The micro-LEDs 610 and 620 are referred to as micro-LEDs 610 ( 1003 ) and 620 ( 1003 ).

[0161] More specifically, if Figure 6D As shown, the reflective structure 1043 is attached to both the sidewall surface 101b and the bottom surface 101c of the first type conductive layer 101. The reflective structure 1043 is conductive. The bottom connection structure 105 is formed at the bottom of the reflective structure 1043 and is electrically connected to the reflective structure 1043. In addition to the reflective structure 1043, the bottom connection structure 105 is also shown. Figure 6D The components of the micro-LED chip 6003 are shown in the figure Figure 6A The components of the micro LED chip 6000 are the same, so the detailed description of these components will not be repeated.

[0162] Fourth variant of the sixth embodiment

[0163] Figure 6E is a cross-sectional view of a micro light emitting diode chip 6004 according to a fourth variation of the sixth embodiment of the present disclosure. Figure 6E The embodiment shown is Figure 6A The embodiment shown differs in that the micro-LEDs 610 and 620 of the micro-LED chip 6004 each include the Figure 2A The micro-LED structure 2000 of the second embodiment. Figure 6E The micro-LEDs 610 and 620 are referred to as micro-LEDs 610 ( 2000 ) and 620 ( 2000 ).

[0164] More specifically, if Figure 6E As shown, bottom edge 102a of second type conductive layer 102 is not aligned with top edge 101a of first type conductive layer 101. Instead, the outline of second type conductive layer 102 vertically projected onto top surface 101d of first type conductive layer 101 is surrounded by top edge 101a of first type conductive layer 101. Figure 6E The components of the micro LED chip 6004 of the embodiment are Figure 6A The components of the micro LED chip 6000 of the embodiment are the same, and therefore detailed descriptions of these components will not be repeated.

[0165] exist Figure 6EIn the illustrated embodiment, the micro-LEDs 610 and 620 of the micro-LED chip 6004 each include the components described in Figure 2A The micro-LED structure 2000 of the second embodiment. Alternatively, in other embodiments, the micro-LEDs 610 and 620 of the micro-LED chip 6004 may each include the respective Figure 2B 、 2C or 2D micro light emitting diode structure 2001 , 2002 or 2003 of the first, second or third variant of the second embodiment.

[0166] Fifth variant of the sixth embodiment

[0167] Figure 6F is a cross-sectional view of a micro light emitting diode chip 6005 according to a fifth variation of the sixth embodiment of the present disclosure. Figure 6F The embodiment shown is Figure 6A The embodiment shown differs in that the micro-LEDs 610 and 620 of the micro-LED chip 6005 each include the Figure 3A The micro-LED structure 3000 of the second embodiment. Figure 6F The micro-LEDs 610 and 620 are referred to as micro-LEDs 610 ( 3000 ) and 620 ( 3000 ).

[0168] More specifically, if Figure 6F As shown, bottom edge 102a of second type conductive layer 102 is not aligned with top edge 101a of first type conductive layer 101. Instead, the outline of first type conductive layer 101 vertically projected onto bottom surface 102b of second type conductive layer 102 is surrounded by bottom edge 102a of second type conductive layer 102. Figure 6F The components of the micro LED chip 6005 of the embodiment are Figure 6A The components of the micro LED chip 6000 of the embodiment are the same, and therefore detailed descriptions of these components will not be repeated.

[0169] exist Figure 6F In the illustrated embodiment, the micro-LEDs 610 and 620 of the micro-LED chip 6005 each include the components described in Figure 3A Alternatively, in other embodiments, the micro-LEDs 610 and 620 of the micro-LED chip 6005 may each include the respective components described in Figure 3B 、 3C or 3D micro light emitting diode structure 3001 , 3002 or 3003 of the first, second or third variant of the third embodiment.

[0170] Seventh Implementation Plan

[0171] Figure 7 FIG2 is a cross-sectional view of a micro-LED chip 7000 according to a seventh embodiment of the present disclosure. Micro-LED chip 7000 may include a plurality of micro-LEDs. At least one micro-LED included in micro-LED chip 7000 may have any of the aforementioned micro-LED structures 1000, 1001, ..., 3003.

[0172] Icon Figure 7 The micro LED chip 7000 and the icon are Figure 6A The difference between the micro-LED chip 6000 and the micro-LED chip 7000 is that the micro-LED chip 7000 further includes an isolation structure 112 formed between adjacent micro-LEDs 610 (1000) and 620 (1000). The isolation structure 112 can be made of a light-absorbing material, which can be a dielectric material including, for example, doped silicon dioxide or silicon nitride. In other embodiments, the isolation structure 112 can be made of a reflective material, such as metal. The isolation structure 112 is configured to electrically isolate the adjacent micro-LEDs 610 (1000) and 620 (1000) from each other.

[0173] At least a portion of the isolation structure 112 is formed in the light emitting layer 103. Figure 7 In the illustrated embodiment, the top surface 112a of the isolation structure 112 is aligned with the top surface 103b of the light-emitting layer 103, and the bottom surface 112b of the isolation structure 112 is aligned with the bottom surface 103c of the light-emitting layer 103. The isolation structure 112 can be formed to surround at least one of the micro-LEDs 610 (1000) and 620 (1000). Additionally or alternatively, at least a portion of the isolation structure 112 can be formed in the top spacer 107 or the bottom spacer 108.

[0174] In addition to the isolation structure, Figure 7 The components of the micro LED chip 7000 of the embodiment are Figure 6A The components of the micro LED chip 6000 of the embodiment are the same, and therefore detailed descriptions of these components will not be repeated.

[0175] Eighth Implementation Plan

[0176] Figure 8A FIG is a cross-sectional view of a micro LED chip 8000 according to an eighth embodiment of the present disclosure. Figure 8A The micro LED chip 8000 and the icon are Figure 7The difference between the micro LED chip 7000 and the micro LED chip 7000 is that the bottom surface 112b of the isolation structure 112 is below the light emitting layer 103. More specifically, Figure 8A As shown, the bottom surface 112b of the isolation structure 112 is below the bottom surface 103c of the light emitting layer 103 and above the bottom surface 108b of the bottom spacer 108. Figure 8A The components of the micro LED chip 8000 are shown in the figure Figure 7 The components of the micro LED chip 7000 are the same, so the detailed description of these components will not be repeated.

[0177] First variant of the eighth embodiment

[0178] Figure 8B FIG is a cross-sectional view of a micro light-emitting diode chip 8001 according to a first variant of the eighth embodiment of the present disclosure. Figure 8B The micro LED chip 8001 and the icon are Figure 8A The difference between the micro LED chip 8000 and the micro LED chip 8000 is that the bottom surface 112b of the isolation structure 112 is aligned with the bottom surface 108b of the bottom spacer 108. Figure 8B The components of the micro-LED chip 8001 are shown in the figure Figure 8A The components of the micro LED chip 8000 are the same, so the detailed description of these components will not be repeated.

[0179] Second variant of the eighth embodiment

[0180] Figure 8C FIG is a cross-sectional view of a micro light-emitting diode chip 8002 according to a second variant of the eighth embodiment of the present disclosure. Figure 8C The micro LED chip 8002 and the icon are Figure 8A The difference between the micro LED chip 8000 and the micro LED chip 8000 is that the bottom surface 112b of the isolation structure 112 is below the bottom surface 108b of the bottom spacer 108 and is disposed in the isolation layer 109. In addition to the isolation structure 112, the bottom surface 112b of the isolation structure 112 is below the bottom surface 108b of the bottom spacer 108 and is disposed in the isolation layer 109. Figure 8C The components of the micro-LED chip 8002 are shown in the figure Figure 8A The components of the micro LED chip 8000 are the same, so the detailed description of these components will not be repeated.

[0181] exist Figures 8A to 8CIn the illustrated embodiment, the area of the top surface 112a of the isolation structure 112 is equal to the area of the bottom surface 112b of the isolation structure 112. Alternatively, in other embodiments, the area of the top surface 112a of the isolation structure 112 may be larger or smaller than the area of the bottom surface 112b of the isolation structure 112. However, alternatively, in some embodiments, the cross-sectional area of the isolation structure 112 at the interface between the light-emitting layer 103 and the bottom spacer 108 or at the bottom surface 108b of the bottom spacer 108 may be larger than the area of the bottom surface 112b of the isolation structure 112.

[0182] Ninth Implementation Plan

[0183] Figure 9A FIG is a cross-sectional view of a micro light-emitting diode chip 9000 according to a ninth embodiment of the present disclosure. Figure 9A The micro LED chip 9000 and the icon are Figure 7 The difference between the micro LED chip 7000 and the micro LED chip 7000 is that the top surface 112a of the isolation structure 112 is above the light emitting layer 103. More specifically, Figure 9A As shown, the top surface 112a of the isolation structure 112 is above the top surface 103b of the light emitting layer 103 and below the top surface 107b of the top spacer 107. Figure 9A The components of the micro LED chip 9000 are shown in the figure Figure 7 The components of the micro LED chip 7000 are the same, so the detailed description of these components will not be repeated.

[0184] First variant of the ninth embodiment

[0185] Figure 9B FIG is a cross-sectional view of a micro light-emitting diode chip 9001 according to a first variant of the ninth embodiment of the present disclosure. Figure 9B The micro LED chip 9001 and the icon are Figure 9A The difference between the micro LED chip 9000 and the micro LED chip 9000 is that the top surface 112a of the isolation structure 112 is aligned with the top surface 107b of the top spacer 107. Figure 9B The components of the micro-LED chip 9001 are shown in the figure Figure 9A The components of the micro LED chip 9000 are the same, so the detailed description of these components will not be repeated.

[0186] Second variant of the ninth embodiment

[0187] Figure 9C FIG is a cross-sectional view of a micro light-emitting diode chip 9002 according to a second variant of the ninth embodiment of the present disclosure. Figure 9CThe micro LED chip 9002 and the icon are Figure 9A The difference between the micro LED chip 9000 and the micro LED chip 9000 is that the top surface 112a of the isolation structure 112 is above the top surface 107b of the top spacer 107 and between adjacent second type conductive layers 102. Figure 9C The components of the micro-LED chip 9002 are shown in FIG. Figure 9A The components of the micro LED chip 9000 are the same, so the detailed description of these components will not be repeated.

[0188] exist Figures 9A to 9C In the illustrated embodiment, the area of the top surface 112a of the isolation structure 112 is equal to the area of the bottom surface 112b of the isolation structure 112. Alternatively, in other embodiments, the area of the top surface 112a of the isolation structure 112 may be larger or smaller than the area of the bottom surface 112b of the isolation structure 112. However, alternatively, in some embodiments, the cross-sectional area of the isolation structure 112 at the top surface 103b of the light-emitting layer 103 or at the top surface 107b of the top spacer 107 may be larger than the area of the bottom surface 112b of the isolation structure 112.

[0189] Tenth Implementation Plan

[0190] Figure 10A FIG is a cross-sectional view of a micro light-emitting diode chip 10000 according to the tenth embodiment of the present disclosure. Figure 10A The micro LED chip 10000 and the icon are Figure 7 The difference between the micro LED chip 7000 and the micro LED chip 7000 is that the top surface 112a of the isolation structure 112 is above the light emitting layer 103, and the bottom surface 112b of the isolation structure 112 is below the light emitting layer 103. More specifically, Figure 10A As shown, the top surface 112a of the isolation structure 112 is above the top surface 103b of the light emitting layer 103 and below the top surface 107b of the top spacer 107, and the bottom surface 112b of the isolation structure 112 is below the bottom surface 103c of the light emitting layer 103 and above the bottom surface 108b of the bottom spacer 108. Figure 10A The components of the micro light emitting diode chip 10000 are shown in FIG. Figure 7 The components of the micro LED chip 7000 are the same, so the detailed description of these components will not be repeated.

[0191] First variant of the tenth embodiment

[0192] Figure 10B FIG1 is a cross-sectional view of a micro light-emitting diode chip 10001 according to a first variant of the tenth embodiment of the present disclosure. Figure 10BThe micro-LED chip 10001 and the icon are Figure 10A The difference between the micro LED chip 10000 and the micro LED chip 10000 is that the bottom surface 112b of the isolation structure 112 is aligned with the bottom surface 108b of the bottom spacer 108. Figure 10B The components of the micro light emitting diode chip 10001 are shown in FIG. Figure 10A The components of the micro LED chip 10000 are the same, so the detailed description of these components will not be repeated.

[0193] Second variant of the tenth embodiment

[0194] Figure 10C FIG1 is a cross-sectional view of a micro light-emitting diode chip 10002 according to a second variant of the tenth embodiment of the present disclosure. Figure 10C The micro-LED chip 10002 and the icon are Figure 10A The difference between the micro LED chip 10000 and the micro LED chip 10000 is that the bottom surface 112b of the isolation structure 112 is below the bottom surface 108b of the bottom spacer 108 and is disposed in the isolation layer 109. In addition to the isolation structure 112, the bottom surface 112b of the isolation structure 112 is below the bottom surface 108b of the bottom spacer 108 and is disposed in the isolation layer 109. Figure 10C The components of the micro light emitting diode chip 10002 are shown in FIG. Figure 10A The components of the micro LED chip 10000 are the same, so the detailed description of these components will not be repeated.

[0195] exist Figures 10A to 10C In the illustrated embodiment, the area of the top surface 112a of the isolation structure 112 is equal to the area of the bottom surface 112b of the isolation structure 112. Alternatively, in other embodiments, the area of the top surface 112a of the isolation structure 112 may be larger or smaller than the area of the bottom surface 112b of the isolation structure 112. However, alternatively, in some embodiments, the cross-sectional area of the isolation structure 112 at the bottom surface 103c of the light-emitting layer 103 or at the bottom surface 108b of the bottom spacer 108 may be larger than the area of the bottom surface 112b of the isolation structure 112.

[0196] Eleventh Implementation Plan

[0197] Figure 11A FIG is a cross-sectional view of a micro light-emitting diode chip 11000 according to the eleventh embodiment of the present disclosure. Figure 11A The micro-LED chip 11000 and the icon are Figure 7 The difference between the micro LED chip 7000 and the micro LED chip 7000 is that the top surface 112a of the isolation structure 112 is aligned with the top surface 107b of the top spacer 107, and the bottom surface 112b of the isolation structure 112 is below the light emitting layer 103. More specifically, in Figure 11AIn the embodiment shown, the bottom surface 112b of the isolation structure 112 is below the bottom surface 103c of the light emitting layer 103 and above the bottom surface 108b of the bottom spacer 108. Figure 11A The components of the micro-LED chip 11000 are shown in FIG. Figure 7 The components of the micro LED chip 7000 are the same, so the detailed description of these components will not be repeated.

[0198] First variant of the eleventh embodiment

[0199] Figure 11B FIG1 is a cross-sectional view of a micro light-emitting diode chip 11001 according to a first variant of the eleventh embodiment of the present disclosure. Figure 11B The micro-LED chip 11001 and the icon are Figure 11A The difference between the micro LED chip 11000 and the micro LED chip 11000 is that the bottom surface 112b of the isolation structure 112 is aligned with the bottom surface 108b of the bottom spacer 108. Figure 11A The components of the micro-LED chip 11001 are shown in FIG. Figure 11A The components of the micro LED chip 11000 are the same, so the detailed description of these components will not be repeated.

[0200] Second variant of the eleventh embodiment

[0201] Figure 11C FIG1 is a cross-sectional view of a micro light-emitting diode chip 11002 according to a second variant of the eleventh embodiment of the present disclosure. Figure 11C The micro-LED chip 11002 and the icon are Figure 11A The difference between the micro LED chip 11000 and the micro LED chip 11000 is that the bottom surface 112b of the isolation structure 112 is below the bottom surface 108b of the bottom spacer 108 and is disposed in the isolation layer 109. In addition to the isolation structure 112, the bottom surface 112b of the isolation structure 112 is below the bottom surface 108b of the bottom spacer 108 and is disposed in the isolation layer 109. Figure 11C The components of the micro-LED chip 11002 are shown in FIG. Figure 11A The components of the micro LED chip 11000 are the same, so the detailed description of these components will not be repeated.

[0202] exist Figures 11A to 11CIn the illustrated embodiment, the area of the top surface 112a of the isolation structure 112 is equal to the area of the bottom surface 112b of the isolation structure 112. Alternatively, in other embodiments, the area of the top surface 112a of the isolation structure 112 may be larger or smaller than the area of the bottom surface 112b of the isolation structure 112. However, alternatively, in some embodiments, the cross-sectional area of the isolation structure 112 at the bottom surface 103c of the light-emitting layer 103 or at the bottom surface 108b of the bottom spacer 108 may be larger than the area of the bottom surface 112b of the isolation structure 112.

[0203] Third variant of the eleventh embodiment

[0204] Figure 11D FIG1 is a cross-sectional view of a micro light-emitting diode chip 11003 according to a third variant of the eleventh embodiment of the present disclosure. Figure 11D The micro-LED chip 11003 and the icon are Figure 11B The difference between the micro LED chip 11001 and the micro LED chip 11001 is that the area of the top surface 112a of the isolation structure 112 is larger than the area of the bottom surface 112b of the isolation structure 112. Figure 11D The components of the micro-LED chip 11003 are shown in FIG. Figure 11B The components of the micro-LED chip 11001 are the same, so the detailed description of these components will not be repeated.

[0205] Twelfth Implementation Plan

[0206] Figure 12A FIG is a cross-sectional view of a micro light-emitting diode chip 12000 according to a twelfth embodiment of the present disclosure. Figure 12A The micro LED chip 12000 and the icon are Figure 7 The difference between the micro LED chip 7000 and the micro LED chip 7000 is that the top surface 112a of the isolation structure 112 is above the top surface 107b of the top spacer 107 and between adjacent second type conductive layers 102, and the bottom surface 112b of the isolation structure 112 is below the light emitting layer 103. More specifically, in Figure 12A In the embodiment shown, the bottom surface 112b of the isolation structure 112 is below the bottom surface 103c of the light emitting layer 103 and above the bottom surface 108b of the bottom spacer 108. Figure 12A The components of the micro light emitting diode chip 12000 are shown in FIG. Figure 7 The components of the micro LED chip 7000 are the same, so the detailed description of these components will not be repeated.

[0207] First variant of the twelfth embodiment

[0208] Figure 12BFIG1 is a cross-sectional view of a micro light-emitting diode chip 12001 according to a first variant of the twelfth embodiment of the present disclosure. Figure 12B The micro LED chip 12001 and the icon are Figure 12A The difference between the micro LED chip 12000 and the micro LED chip 12000 is that the bottom surface 112b of the isolation structure 112 is aligned with the bottom surface 108b of the bottom spacer 108. Figure 12B The components of the micro-LED chip 12001 are shown in FIG. Figure 12A The components of the micro LED chip 12000 are the same, so the detailed description of these components will not be repeated.

[0209] Second variant of the twelfth embodiment

[0210] Figure 12C FIG1 is a cross-sectional view of a micro light-emitting diode chip 12002 according to a second variant of the twelfth embodiment of the present disclosure. Figure 12C The micro LED chip 12002 and the icon are Figure 12A The difference between the micro LED chip 12000 and the micro LED chip 12000 is that the bottom surface 112b of the isolation structure 112 is below the bottom surface 108b of the bottom spacer 108 and is disposed in the isolation layer 109. In addition to the isolation structure 112, the micro LED chip 12000 shown in FIG. Figure 12C The components of the micro-LED chip 12002 are shown in FIG. Figure 12A The components of the micro LED chip 12000 are the same, so the detailed description of these components will not be repeated.

[0211] Third variation of the twelfth embodiment

[0212] Figure 12D FIG1 is a cross-sectional view of a micro light-emitting diode chip 12003 according to a third variant of the twelfth embodiment of the present disclosure. Figure 12D The micro LED chip 12003 and the icon are Figure 12C The difference between the micro LED chip 12002 and the micro LED chip 12002 is that the area of the top surface 112a of the isolation structure 112 is smaller than the area of the bottom surface 112b of the isolation structure 112, and the cross-sectional area 112c of the isolation structure 112 at the bottom surface 103c of the light-emitting layer 103 is larger than the area of the bottom surface 112b of the isolation structure 112. Figure 12D The components of the micro-LED chip 12003 are shown in the figure Figure 12C The components of the micro LED chip 12002 are the same, so the detailed description of these components will not be repeated.

[0213] Thirteenth Implementation Plan

[0214] Figure 13A FIG1 is a cross-sectional view of a micro LED chip 13000 according to a thirteenth embodiment of the present disclosure. Micro LED chip 13000 may include a plurality of micro-LEDs. At least one micro-LED included in micro LED chip 13000 may have any of the aforementioned micro LED structures 1000, 1001, ..., 3003.

[0215] Icon Figure 13A The micro LED chip 13000 and the icon are Figure 6A The difference between the micro-LED chip 6000 and the micro-LED chip 13000 is that the micro-LED chip 13000 further includes a metal layer 113 formed above the light-emitting layer 103 between the adjacent micro-LEDs 610 (1000) and 620 (1000). The metal layer 113 is formed above the top surface 103b of the light-emitting layer 103 and does not contact the first type conductive layer 101 or the second type conductive layer 102. More specifically, in Figure 13A In the illustrated embodiment, a top spacer 107 is formed over the light emitting layer 103 , and a metal layer 113 is formed on a top surface 107 b of the top spacer 107 .

[0216] The lateral dimension d1 of the metal layer 113 does not exceed the distance d2 between the edge 103a of the light-emitting layer 103 and the top edge 101a of the first-type conductive layer 101, or the lateral dimension d1 of the metal layer 113 does not exceed the distance d3 between the edge 103a of the light-emitting layer 103 and the bottom edge 102a of the second-type conductive layer 102. The lateral dimension d1 of the metal layer 113 may be between approximately 2 nanometers and approximately 10 micrometers.

[0217] In some embodiments, the center point of the metal layer 113 is aligned with the center points of the adjacent micro-LEDs 610 (1000) and 620 (1000). Alternatively, in some embodiments, the center point of the metal layer 113 is closer to one of the adjacent micro-LEDs 610 (1000) and 620 (1000) than to the other of the adjacent micro-LEDs 610 (1000) and 620 (1000).

[0218] The metal layer 113 may include a high work function metal material whose work function matches the work function of the material of the light emitting layer 103. The high work function metal material may include at least one of the following: gold, platinum, palladium, beryllium, cobalt, nickel, or tungsten.

[0219] Variant of the Thirteenth Embodiment

[0220] Figure 13B FIG1 is a cross-sectional view of a micro light-emitting diode chip 13001 according to a variation of the thirteenth embodiment of the present disclosure. Figure 13B The micro-LED chip 13001 and the icon are Figure 13A The difference between the micro LED chip 13000 and the micro LED chip 13001 is that the micro LED chip 13001 includes a plurality of metal layers 113 formed on the top surface 107b of the top spacer 107 and between adjacent micro-LEDs 610 (1000) and 620 (1000). These metal layers 113 are arranged in parallel along the top surface 103b of the light emitting layer 103.

[0221] exist Figure 13B In the embodiment shown, there are three metal layers 113. In other embodiments, the number of metal layers 113 may be greater than three.

[0222] exist Figure 13A and 13B In the illustrated embodiment, micro-LEDs 610 and 620 each include the Figure 1A Alternatively, in other embodiments, each of the micro-LEDs 610 and 620 may include the respective components described in Figure 1B 、 1C and any of the micro light emitting diode structures 1001 , 1002 and 1003 of the first, second and third variations of the first embodiment 1D.

[0223] Fourteenth Implementation Plan

[0224] Figure 14A is a cross-sectional view of a micro light emitting diode chip 14000 according to a fourteenth embodiment of the present disclosure. Figure 14A The embodiment shown is Figure 13A The embodiment shown is different in that the micro-LED chip 14000 includes two micro-LEDs 610 (2000) and 620 (2000), and each of the micro-LEDs 610 (2000) and 620 (2000) includes the components described in Figure 2A The micro light emitting diode structure 2000 of the second embodiment. Figure 14A Other components of the micro LED chip 14000 of the embodiment are Figure 13A The components of the micro LED chip 13000 of the embodiment are the same, and thus detailed descriptions of these components will not be repeated.

[0225] Variant of the Fourteenth Embodiment

[0226] Figure 14B FIG1 is a cross-sectional view of a micro light-emitting diode chip 14001 according to a variation of the fourteenth embodiment of the present disclosure. Figure 14BThe micro-LED chip 14001 and the icon are Figure 14A The difference between the micro LED chip 14000 and the micro LED chip 14001 is that the micro LED chip 14001 includes a plurality of metal layers 113 formed on the top surface 107b of the top spacer 107 and between adjacent micro-LEDs 610 (2000) and 620 (2000). Figure 14B Other components of the micro LED chip 14001 of the embodiment are Figure 13A The components of the micro LED chip 13000 of the embodiment are the same, and thus detailed descriptions of these components will not be repeated.

[0227] exist Figure 14A and 14B In the illustrated embodiment, micro-LEDs 610 and 620 each include the Figure 2A Alternatively, in other embodiments, each of the micro-LEDs 610 and 620 may include the respective components described in Figure 2B 、 2C and any one of the micro light emitting diode structures 2001, 2002 and 2003 of the first, second and third variations of the second embodiment of 2D.

[0228] Fifteenth Implementation Plan

[0229] Figure 15A is a cross-sectional view of a micro light emitting diode chip 15000 according to a fifteenth embodiment of the present disclosure. Figure 15A The embodiment shown is Figure 13A The embodiment shown is different in that the micro-LED chip 15000 includes two micro-LEDs 610 (3000) and 620 (3000), and each of the micro-LEDs 610 (3000) and 620 (3000) includes the Figure 3A A micro light emitting diode structure 3000 according to the second embodiment. Figure 15A Other components of the micro LED chip 15000 of the embodiment are Figure 13A The components of the micro LED chip 13000 of the embodiment are the same, and thus detailed descriptions of these components will not be repeated.

[0230] Variant of the fifteenth embodiment

[0231] Figure 15B FIG1 is a cross-sectional view of a micro light-emitting diode chip 15001 according to a variation of the fifteenth embodiment of the present disclosure. Figure 15B The micro-LED chip 15001 and the icon are Figure 15AThe difference between the micro LED chip 15000 and the micro LED chip 15001 is that the micro LED chip 15001 includes a plurality of metal layers 113 formed on the top surface 107b of the top spacer 107 and between adjacent micro-LEDs 610 (3000) and 620 (3000). Figure 15B The components of the micro LED chip 15001 of the embodiment are Figure 13A The components of the micro LED chip 13000 of the embodiment are the same, and thus detailed descriptions of these components will not be repeated.

[0232] exist Figure 15A and 15B In the illustrated embodiment, micro-LEDs 610 and 620 each include the Figure 3A Alternatively, in other embodiments, each of the micro-LEDs 610 and 620 may include the respective components described in Figure 3B 、 3C and any one of the micro light emitting diode structures 3001, 3002 and 3003 of the first, second and third variations of the third embodiment of 3D.

[0233] Sixteenth Implementation Plan

[0234] Figure 16A FIG1 is a cross-sectional view of a micro LED chip 16000 according to a sixteenth embodiment of the present disclosure. Micro LED chip 16000 may include a plurality of micro-LEDs. At least one micro-LED included in micro LED chip 16000 may have any of the aforementioned micro LED structures 4000, 4001, ..., 5003.

[0235] exist Figure 16A In the embodiment shown, the micro-LED chip 16000 includes two micro-LEDs 610 (4000) and 620 (4000). The micro-LEDs 610 (4000) and 620 (4000) each include the components described in Figure 4A A micro light emitting diode structure 4000 according to a fourth embodiment.

[0236] like Figure 16AAs shown, micro-LEDs 610 (4000) and 620 (4000) each include a first-type conductive layer 101, a second-type conductive layer 102 stacked on the first-type conductive layer 101, and a light-emitting layer 103 formed between the first-type conductive layer 101 and the second-type conductive layer 102. The outline of the first-type conductive layer 101 vertically projected onto the bottom surface 102b of the second-type conductive layer 102 is surrounded by the bottom edge 102a of the second-type conductive layer 102. The light-emitting layer 103 extends along a horizontal plane away from the top edge 101a of the first-type conductive layer 101, and the edge 103a of the light-emitting layer 103 is aligned with the bottom edge 102a of the second-type conductive layer 102.

[0237] Each of micro-LEDs 610 (4000) and 620 (4000) further includes a top spacer 107 formed on the light-emitting layer 103 and a bottom spacer formed below the light-emitting layer 103. An edge 107a of the top spacer 107 and an edge 108a of the bottom spacer 108 are both aligned with an edge 103a of the light-emitting layer 103, and the edge 103a is aligned with a bottom side 102a of the second type conductive layer 102.

[0238] The micro LED chip 16000 further includes a top isolation layer 114 surrounding the light emitting layer 103 , and a micro lens 111 formed on the second type conductive layer 102 and on a top surface 114 a of the isolation layer 114 .

[0239] In addition to the fact that the edge 103a of the light emitting layer 103, the edge 107a of the top spacer 107, and the edge 108a of the bottom spacer 108 are aligned with the bottom side 102a of the second type conductive layer 102, Figure 16A Components of 16,000 micro-LED chips with Figure 6F The components of the micro-LED chip 6005 are the same, so the detailed description of these components will not be repeated.

[0240] Variant of the Sixteenth Embodiment

[0241] Figure 16B 16 is a cross-sectional view of a micro light emitting diode chip 16001 according to a variation of the sixteenth embodiment of the present disclosure. Figure 16B The embodiment shown is Figure 16A The embodiment shown is different in that the micro-LED chip 16001 further includes a metal layer 113 formed on the top surface 114a of the isolation layer 114 and between the adjacent micro-LEDs 610 (4000) and 620 (4000). Figure 16BIn the embodiment shown, there is only one metal layer 113 between micro-LEDs 610 (4000) and 620 (4000). Alternatively, in other embodiments, there are multiple metal layers 113 between micro-LEDs 610 (4000) and 620 (4000), and the number of multiple metal layers 113 between micro-LEDs 610 (4000) and 620 (4000) may be more than two. In addition to the metal layer 113, Figure 16B The components of the micro LED chip 16001 are Figure 16A The components of the micro LED chip 16000 are the same, so the detailed description of these components will not be repeated.

[0242] exist Figure 16A and 16B In the illustrated embodiment, micro-LEDs 610 and 620 each include the Figure 4A Alternatively, in other embodiments, each of the micro-LEDs 610 and 620 may include the respective components described in Figure 4B 、 4C and any one of the micro light emitting diode structures 4001, 4002 and 4003 of the first, second and third variations of the fourth embodiment of 4D.

[0243] Seventeenth Implementation Plan

[0244] Figure 17A 17 is a cross-sectional view of a micro-LED chip 17000 according to the seventeenth embodiment of the present disclosure. The micro-LED chip 17000 includes two micro-LEDs 610 (5000) and 620 (5000). The micro-LEDs 610 (5000) and 620 (5000) each include the components described in Figure 5A A micro light emitting diode structure 5000 according to a fifth embodiment.

[0245] Micro LED chip 17000 differs from micro LED chip 16000 in that the outline of second-type conductive layer 102, vertically projected onto top surface 101d of first-type conductive layer 101, is surrounded by top edge 101a of first-type conductive layer 101. Furthermore, edge 103a of light-emitting layer 103, edge 107a of top spacer 107, and edge 108a of bottom spacer 108 are aligned with top edge 101a of first-type conductive layer 101.

[0246] In addition, the micro LED chip 17000 further includes a top isolation layer 114 surrounding the light emitting layer 103. The micro lens 111 is formed on the second type conductive layer 102 and on the top surface 114a of the isolation layer 114. Figure 17A The other components of the micro LED chip 17000 of the fourth embodiment are Figure 16A The components of the micro LED chip 16000 of the second embodiment are the same, and thus detailed descriptions of these components will not be repeated.

[0247] Variant of the Seventeenth Embodiment

[0248] Figure 17B 17 is a cross-sectional view of a micro light emitting diode chip 17001 according to a variation of the seventeenth embodiment of the present disclosure. Figure 17B The embodiment shown is Figure 17A The embodiment shown is different in that the micro-LED chip 17001 further includes a metal layer 113 formed on the top surface 114a of the isolation layer 114 and between adjacent micro-LEDs 610 (5000) and 620 (5000). Figure 17B In the embodiment shown, there is only one metal layer 113 between micro-LEDs 610 (5000) and 620 (5000). Alternatively, in other embodiments, there are multiple metal layers 113 between micro-LEDs 610 (5000) and 620 (5000), and the number of multiple metal layers 113 between micro-LEDs 610 (4000) and 620 (4000) may be more than two. In addition to the metal layer 113, Figure 17B The components of the micro LED chip 17001 are shown in FIG. Figure 17A The components of the micro LED chip 17000 are the same, so the detailed description of these components will not be repeated.

[0249] exist Figure 17A and 17B In the illustrated embodiment, micro-LEDs 610 and 620 each include the Figure 5A Alternatively, in other embodiments, each of the micro-LEDs 610 and 620 may include the respective components described in Figure 5B 、 5C and any one of the micro light emitting diode structures 5001, 5002 and 5003 of the first, second and third variations of the fifth embodiment of 5D.

[0250] Comparative Examples

[0251] Figure 18is a cross-sectional view of a micro-LED structure 1 according to a comparative embodiment. Figure 18 The micro-LED structure 1 of the comparative embodiment is shown. Figure 1A The micro-LED structure 1000 of the first embodiment differs in that the light-emitting layer 103 does not extend horizontally away from the top edge 101a of the first-type conductive layer 101 and the bottom edge 102a of the second-type conductive layer 102. Instead, in this comparative example, the edge 103a of the light-emitting layer 103 is aligned with both the top edge 101a of the first-type conductive layer 101 and the bottom edge 102a of the second-type conductive layer 102.

[0252] As previously explained, the light-emitting layer 103 may include multiple pairs of quantum well layers. The number of multiple quantum well (MQW) pairs in the light-emitting layer 103 is related to the exposed sidewall area of the light-emitting layer 103, such as that produced by inductively coupled plasma etching. A larger exposed sidewall area results in more MQW pairs, leading to greater surface recombination carrier loss.

[0253] In this comparative embodiment, the sidewalls of light-emitting layer 103 are aligned with edges 101a and 102a of first-type conduction layer 101 and second-type conduction layer 102. As a result, large surface recombination carrier losses may occur in the micro-LED between first-type conduction layer 101 and second-type conduction layer 102, negatively impacting the micro-LED's luminous efficiency.

[0254] In contrast, in the first embodiment and other embodiments of the present disclosure, the light-emitting layer 103 extends away from the top edge 101a of the first-type conduction layer 101 and the bottom edge 102a of the second-type conduction layer 102, so that the edge 103a of the light-emitting layer 103 does not contact the top edge 101a of the first-type conduction layer 101 and the bottom edge 102a of the second-type conduction layer 102. As a result, surface recombination carrier loss may not occur in the micro-LED between the first-type conduction layer 101 and the second-type conduction layer 102. As a result, the luminous efficiency of the micro-LED is improved.

[0255] Although several illustrative embodiments have been described herein, it will be understood by those skilled in the art based on this disclosure that the scope of this disclosure encompasses any and all embodiments having equivalent components, variations, omissions, combinations (e.g., relating to aspects of different embodiments), adaptations, and / or changes. For example, features included in different embodiments illustrated in different figures may be combined. The limitations in the patent claims should be interpreted broadly based on the language used in the patent claims and are not limited to the examples described in this specification or during the patent application process. These examples should be interpreted as non-exclusive. Therefore, it is intended that this specification and examples be considered merely illustrative, and that the true scope and spirit be indicated by the following patent claims and all equivalent scopes thereof.

Claims

1. A micro light-emitting diode chip, characterized in that: Including multiple micro-LEDs, Wherein, at least one micro-LED among the plurality of micro-LEDs comprises: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer, The light-emitting layer is continuously formed on the entire micro-LED chip, and the multiple micro-LEDs share the light-emitting layer.

2. The micro-LED chip according to claim 1, wherein: Further including: a top spacer formed on a top surface of the light emitting layer; and a bottom spacer formed on a bottom surface of the light emitting layer, wherein the edge of the top spacer is aligned with the edge of the light emitting layer, and An edge of the bottom spacer is aligned with the edge of the light emitting layer.

3. The micro-LED chip according to claim 2, wherein: The thickness of the top spacer is greater than the thickness of the light emitting layer, and the thickness of the bottom spacer is greater than the thickness of the light emitting layer.

4. The micro-LED chip according to claim 2, wherein: Further comprising: forming a micro lens on the second type conductive layer and on a top surface of the top spacer in the at least one micro-LED.

5. The micro-LED chip according to claim 1, wherein: The top area of the first type conductive layer is larger than the bottom area of the first type conductive layer, and the top area of the second type conductive layer is smaller than the bottom area of the second type conductive layer.

6. The micro-LED chip according to claim 1, wherein: The light emitting layer includes only one pair of quantum well layers, or includes multiple pairs of quantum well layers.

7. The micro-LED chip according to claim 1, wherein: The at least one micro-LED further includes: a reflective structure formed surrounding the first type conductive layer.

8. The micro-LED chip according to claim 7, wherein: In the at least one micro-LED, the reflective structure is attached to the sidewall surface of the first type conductive layer, and The at least one micro-LED further includes a bottom connection structure formed below the first type conductive layer and electrically connected to the first type conductive layer.

9. The micro-LED chip according to claim 8, wherein: The method further comprises a substrate below the first type conductive layer and electrically connected to the bottom connection structure through a connection pad in the substrate.

10. The micro-LED chip according to claim 9, wherein: The substrate includes an IC circuit.

11. The micro-LED chip according to claim 9, wherein: The reflective structure on the sidewall of the first type conductive layer is inclined relative to the surface of the substrate, and the inclination angle of the reflective structure relative to the surface of the substrate is about 30 degrees to about 75 degrees.

12. The micro LED chip according to claim 8, wherein: The bottom connecting structure is made of a reflective conductive material.

13. The micro-LED chip according to claim 8, wherein: The reflective structure on the sidewall of the first-type conductive layer has a curved surface.

14. The micro-LED chip according to claim 8, wherein: The reflective structure at the sidewall of the first type conductive layer is made of an ODR (Omnidirectional Reflector) structure or a DBR (Distributed Bragg Reflector) structure.

15. The micro-LED chip according to claim 7, wherein: The reflective structure is attached to both the sidewall surface and the bottom surface of the first type conductive layer.

16. The micro-LED chip according to claim 15, wherein: The reflective structure on the bottom surface of the first type conductive layer is conductive, and The micro LED chip further includes a bottom connection structure formed at the bottom of the reflective structure and electrically connected to the reflective structure.

17. The micro-LED chip according to claim 7, wherein: The reflective structure is configured to collect light on the second-type conductive layer.

18. The micro-LED chip according to claim 1, wherein: The at least one micro-LED further comprises: A reflective structure is attached to the bottom surface of the first type conductive layer.

19. The micro-LED chip according to claim 18, wherein: The reflective structure is conductive, and The at least one micro-LED further includes a bottom connection structure formed at the bottom of the reflective structure and electrically connected to the reflective structure.

20. The micro-LED chip according to claim 1, wherein: The method further comprises: in the at least one micro-LED, an isolation layer surrounding the first type conductive layer and formed below the light emitting layer, wherein the isolation layer is made of a light absorbing material.

21. A micro light-emitting diode chip, characterized in that: Including multiple micro-LEDs, Wherein, at least one micro-LED among the plurality of micro-LEDs comprises: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer, The light-emitting layer is continuously formed on the entire micro-LED chip, and the multiple micro-LEDs share the light-emitting layer, and An isolation structure is formed between adjacent micro-LEDs, and at least a portion of the isolation structure is formed in the light-emitting layer.

22. The micro-LED chip according to claim 21, wherein: The isolation structure is made of a light absorbing material.

23. The micro-LED chip according to claim 21, wherein: The isolation structure is made of reflective material.

24. The micro-LED chip according to claim 21, wherein: Further including: a top spacer formed on a top surface of the light emitting layer; and a bottom spacer formed on a bottom surface of the light emitting layer, wherein the edge of the top spacer is aligned with the edge of the light emitting layer, and An edge of the bottom spacer is aligned with the edge of the light emitting layer.

25. The micro-LED chip according to claim 24, wherein: Further comprising: forming a micro lens on the second type conductive layer and on a top surface of the top spacer in the at least one micro-LED.

26. The micro-LED chip according to claim 24, wherein: The thickness of the top spacer is greater than the thickness of the light emitting layer, and the thickness of the bottom spacer is greater than the thickness of the light emitting layer.

27. The micro-LED chip according to claim 21, wherein: The top area of the first type conductive layer is larger than the bottom area of the first type conductive layer, and the top area of the second type conductive layer is smaller than the bottom area of the second type conductive layer.

28. The micro-LED chip according to claim 21, wherein: The light emitting layer includes only one pair of quantum well layers, or includes multiple pairs of quantum well layers.

29. The micro-LED chip according to claim 21, wherein: The at least one micro-LED further includes: a reflective structure formed surrounding the first type conductive layer.

30. The micro-LED chip according to claim 29, wherein: In the at least one micro-LED, the reflective structure is attached to a sidewall of the first type conductive layer, and The at least one micro-LED further includes a bottom connection structure formed below the first type conductive layer and electrically connected to the first type conductive layer.

31. The micro-LED chip according to claim 30, wherein: The method further comprises a substrate below the first type conductive layer and electrically connected to the bottom connection structure through a connection pad in the substrate.

32. The micro-LED chip according to claim 30, wherein: The bottom connecting structure is made of a reflective conductive material.

33. The micro-LED chip according to claim 30, wherein: The reflective structure on the sidewall of the first-type conductive layer has a curved surface.

34. The micro-LED chip according to claim 30, wherein: The reflective structure on the sidewall of the first type conductive layer is inclined relative to the surface of the substrate, and the inclination angle of the reflective structure is about 30 degrees to about 75 degrees.

35. The micro-LED chip according to claim 30, wherein: The reflective structure at the sidewall of the first type conductive layer is made of an ODR (Omnidirectional Reflector) structure or a DBR (Distributed Bragg Reflector) structure.

36. The micro-LED chip according to claim 29, wherein: The reflective structure is attached to both the sidewall surface and the bottom surface of the first type conductive layer.

37. The micro-LED chip according to claim 36, wherein: The reflective structure on the bottom surface of the first type conductive layer is conductive, and The micro LED chip further includes a bottom connection structure formed at the bottom of the reflective structure and electrically connected to the reflective structure.

38. The micro-LED chip according to claim 29, wherein: The reflective structure is configured to collect light on the second-type conductive layer.

39. The micro-LED chip according to claim 21, wherein: The at least one micro-LED further comprises: A reflective structure is attached to the bottom surface of the first type conductive layer.

40. The micro-LED chip according to claim 39, wherein: The reflective structure is conductive, and The at least one micro-LED further includes a bottom connection structure formed at the bottom of the reflective structure and electrically connected to the reflective structure.

41. A micro light-emitting diode chip, characterized in that: Including multiple micro-LEDs, Wherein, at least one micro-LED among the plurality of micro-LEDs comprises: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer, The light-emitting layer is continuously formed on the entire micro-LED chip, and the multiple micro-LEDs share the light-emitting layer. An isolation structure is formed between adjacent micro-LEDs, at least a portion of the isolation structure is formed in the light emitting layer, and The top surface of the isolation structure is aligned with the top of the light-emitting layer, and the bottom surface of the isolation structure is below the light-emitting layer.

42. The micro-LED chip according to claim 41, wherein: The top surface area of the isolation structure is equal to the bottom surface area of the isolation structure.

43. The micro-LED chip according to claim 41, wherein: The top surface area of the isolation structure is larger than the bottom surface area of the isolation structure.

44. The micro-LED chip according to claim 41, wherein: The top surface area of the isolation structure is smaller than the bottom surface area of the isolation structure.

45. The micro-LED chip according to claim 44, wherein: The cross-sectional area of the isolation structure on the top surface of the light-emitting layer or the bottom surface of the light-emitting layer is larger than the bottom surface area of the isolation structure.

46. The micro-LED chip according to claim 41, wherein: The isolation structure is made of a light absorbing material.

47. The micro-LED chip according to claim 41, wherein: The isolation structure is made of reflective material.

48. The micro-LED chip according to claim 41, wherein: Further including: a top spacer formed on a top surface of the light emitting layer; and a bottom spacer formed on a bottom surface of the light emitting layer, wherein the edge of the top spacer is aligned with the edge of the light emitting layer, and An edge of the bottom spacer is aligned with the edge of the light emitting layer.

49. The micro-LED chip according to claim 48, wherein: The thickness of the top spacer is greater than the thickness of the light emitting layer, and the thickness of the bottom spacer is greater than the thickness of the light emitting layer.

50. The micro-LED chip according to claim 48, wherein: Further comprising: forming a micro lens on the second type conductive layer and on a top surface of the top spacer in the at least one micro-LED.

51. The micro-LED chip according to claim 41, wherein: The top area of the first type conductive layer is larger than the bottom area of the first type conductive layer, and the top area of the second type conductive layer is smaller than the bottom area of the second type conductive layer.

52. The micro-LED chip according to claim 41, wherein: The light emitting layer includes only one pair of quantum well layers, or includes multiple pairs of quantum well layers.

53. The micro-LED chip according to claim 41, wherein: The at least one micro-LED further includes: a reflective structure formed surrounding the first type conductive layer.

54. The micro-LED chip according to claim 53, wherein: In the at least one micro-LED, the reflective structure is attached to a sidewall of the first type conductive layer, and The at least one micro-LED further includes a bottom connection structure formed below the first type conductive layer and electrically connected to the first type conductive layer.

55. The micro-LED chip according to claim 54, characterized in that: The method further comprises a substrate below the first type conductive layer and electrically connected to the bottom connection structure through a connection pad in the substrate.

56. The micro-LED chip according to claim 54, wherein: The reflective structure on the sidewall of the first-type conductive layer has a curved surface.

57. The micro-LED chip according to claim 54, wherein: The reflective structure on the sidewall of the first type conductive layer is inclined relative to the surface of the substrate, and the inclination angle of the reflective structure relative to the surface of the substrate is about 30 degrees to about 75 degrees.

58. The micro-LED chip according to claim 54, wherein: The reflective structure is attached to both the sidewall and the bottom surface of the first type conductive layer.

59. The micro-LED chip according to claim 54, wherein: The reflective structure at the sidewall of the first type conductive layer is made of an ODR (Omnidirectional Reflector) structure or a DBR (Distributed Bragg Reflector) structure.

60. The micro-LED chip according to claim 41, wherein: The at least one micro-LED further comprises: A reflective structure is attached to the bottom surface of the first type conductive layer.

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