Wafer defect detection method and device

Abstract

The invention discloses a wafer defect detection method and device. The method comprises the following steps: a signal acquisition and processing module acquires a defect threshold value of test data of each defect test channel; the signal acquisition and processing module screens test data greater than a defect threshold value as defect data, and sends the defect data and associated data thereof to the industrial personal computer; the associated data at least comprises a measurement motor position corresponding to the defect data; the industrial personal computer obtains particle information of the wafer according to the defect data and the associated data; the particle information at least comprises particle positions and particle numbers. According to the technical scheme provided by the invention, the wafer defect detection efficiency and accuracy are improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor wafer detection technology, and in particular to a wafer defect detection method and device. Background Art

[0002] During the semiconductor manufacturing process, wafer surface defects will affect yield, manufacturability and reliability. With the improvement of circuit integration and the reduction of critical dimensions, the requirements for wafer cleanliness are becoming higher and higher. The impact of defects on semiconductor manufacturing is becoming increasingly greater, making it one of the main factors restricting the development of semiconductor technology.

[0003] Defect detection in the semiconductor industry primarily relies on optical inspection systems. High-resolution optical imaging inevitably generates massive amounts of image data. Wafer defect detection, in particular, requires full inspection, meaning all production wafers must be inspected. Furthermore, wafer defect detection requires comprehensive inspection of the entire wafer. These requirements pose significant challenges to image data processing and storage. Current defect detection algorithms utilize traditional digital image processing or deep learning methods to process each image, resulting in a significant computational load. This results in a lengthy defect detection process and poor accuracy. Summary of the Invention

[0004] Embodiments of the present invention provide a wafer defect detection method and apparatus to improve the efficiency and accuracy of wafer defect detection.

[0005] In a first aspect, an embodiment of the present invention provides a wafer defect detection method, comprising:

[0006] The signal acquisition and processing module obtains the defect threshold of the test data of each defect test channel;

[0007] The signal acquisition and processing module selects test data greater than the defect threshold as defect data, and sends the defect data and its associated data to the industrial computer; the associated data at least includes the measured motor position corresponding to the defect data;

[0008] The industrial computer obtains the particle information of the wafer according to the defect data and its associated data; the particle information at least includes the particle position and the particle quantity.

[0009] In a second aspect, an embodiment of the present invention further provides a wafer defect detection device, which is applicable to the wafer defect detection method provided by any embodiment of the present invention, comprising: a laser module, a photodetector, a signal acquisition and processing module, and an industrial computer;

[0010] The laser module is used to emit laser light to the wafer so that the photoelectric detector can obtain test data;

[0011] The signal acquisition and processing module includes a plurality of defect test channels; the defect test channels are electrically connected to the photoelectric detector;

[0012] The signal acquisition and processing module is used to obtain the defect threshold of the test data of each defect test channel; the signal acquisition and processing module is also used to filter the test data greater than the defect threshold as defect data, and send the defect data and its associated data to the industrial computer; the associated data at least includes the measured motor position corresponding to the defect data;

[0013] The industrial computer is used to obtain particle information of the wafer according to the defect data and its associated data; the particle information at least includes particle positions and particle quantities.

[0014] In the present invention, when the laser is irradiated onto the wafer and measurement data is generated by the photodetector, the test data of each defect test channel is first acquired and screened by the signal acquisition and processing module. Specifically, the signal acquisition and processing module acquires the defect threshold of the test data of each defect test channel. When the test data is greater than the defect threshold, it is determined that there are defects or particles in the wafer. The signal acquisition and processing module transmits the test data with a value greater than the defect threshold as defect data to the industrial computer. The industrial computer obtains the particle information of the wafer based on the defect data and its related data analysis, which facilitates the confirmation of the particle position and particle number of the wafer, so as to facilitate the removal of the above-mentioned particles. This embodiment pre-screens the test data through the signal acquisition and processing module, rather than screening all the test data through the industrial computer, effectively reducing the amount of calculation of the industrial computer, avoiding a long defect detection process, and effectively locking the defect data, thereby improving the accuracy of defect detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 A schematic structural diagram of a wafer defect detection device provided by an embodiment of the present invention;

[0016] Figure 2 The embodiment of the present invention provides Figure 1 Detailed structural diagram of a wafer defect detection device;

[0017] Figure 3 A schematic flow chart of another wafer defect detection method provided by an embodiment of the present invention;

[0018] Figure 4 A schematic flow chart of another wafer defect detection method provided by an embodiment of the present invention;

[0019] Figure 5 A schematic flow chart of another wafer defect detection method provided by an embodiment of the present invention;

[0020] Figure 6A detailed structural diagram of another wafer defect detection device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0021] The present invention will be further described in detail below with reference to the accompanying drawings and examples. It will be understood that the specific embodiments described herein are intended only to illustrate the present invention and are not intended to limit the present invention. It should also be noted that, for ease of description, the accompanying drawings only illustrate portions relevant to the present invention, not all structures.

[0022] The semiconductor manufacturing process is very complex. To ensure product yield, defect detection must be carried out in every quality inspection process. When defects or contaminants exist on the substrate surface of the silicon wafer, as the silicon wafer is processed and the coating deposition layers are stacked, a micro-nanoscale protruding particle structure with clear boundaries will eventually be generated on the silicon wafer. When the laser is irradiated on the surface of the protruding particle structure, the diffuse scattering effect of the particles on the laser cannot produce an effective etching circuit on the wafer surface, resulting in short circuits or open circuits in the photolithography circuit, making the entire silicon wafer unusable and causing huge economic losses.

[0023] Therefore, defect detection of wafers is a crucial link. The requirements of the embodiments of the present invention for wafer defect detection mainly include two aspects: one is to accurately identify defects and obtain specific information about the defects, including location, area, etc.; the other is to meet industrial production requirements, have high performance, and achieve real-time monitoring. For example, it can be detected by scattered light detection technology, and scattered light detection technology has the advantages of non-contact, high resolution and fast detection speed. The existing technology requires coverage detection of the entire wafer, which requires the controller to perform a large amount of calculations. This embodiment pre-screens the test data through the signal acquisition and processing module, thereby reducing the calculation amount of the controller, improving the efficiency of defect detection, and improving the accuracy of particle defect position detection.

[0024] An embodiment of the present invention provides a wafer defect detection device, Figure 1 A schematic diagram of the structure of a wafer defect detection device provided by an embodiment of the present invention is shown in FIG. Figure 1As shown, the wafer defect detection device includes: a laser module 202, a photodetector 201, a signal acquisition and processing module 102, and an industrial computer 101. The laser module 202 is used to emit laser light to the wafer surface. The light reflected and scattered by the wafer surface is captured by the photodetector 201 and outputs test data. The signal acquisition and processing module 102 includes multiple defect test channels, which are electrically connected to the photodetector 201. The signal acquisition and processing module 102 is used to obtain the defect threshold of the test data of each defect test channel, filter the test data exceeding the defect threshold as defect data, and send the defect data and its associated data to the industrial computer 101. The associated data at least includes the measurement motor position corresponding to the defect data. The industrial computer 101 is used to obtain wafer particle information based on the defect data and its associated data. The particle information at least includes the particle position and particle count.

[0025] The wafer defect detection process is as follows: Laser module 202 is controlled to generate laser light, which is then irradiated onto the wafer surface, causing it to reflect and scatter. Photodetector 201 is controlled to collect the scattered light and output test data. Signal acquisition and processing module 102 and industrial computer 101 then analyze this data to determine the number and location of particles. Photodetector 201 can be integrated into a motion module, which can include components such as a measurement motor. By controlling the linear and rotational motion of the measurement motor, starting from the center of the wafer and moving in a spiral motion toward the edge, photodetector 201 detects the scattered light, continuously acquiring test data.

[0026] like Figure 2 As shown, Figure 2The detailed structural diagram of the wafer defect detection device provided in this embodiment is as follows. Specifically, the signal acquisition and processing module 102 may include multiple defect test channels 103, which are capable of receiving test data output by the photodetector. When there are no defects or particles on the wafer surface, the test data output by the defect test channel 103 is stable within a certain range. When particles are present, the test data will exceed a certain range. The defect threshold can be determined based on wafer parameters, laser parameters, and defect test channel parameters. Among them, wafer parameters may include parameters such as wafer flatness and wafer material, laser parameters may include parameters such as laser power and laser emission angle, and defect test channel parameters may include parameters such as channel amplification and channel signal. This embodiment determines the defect threshold mainly based on the defect test channel parameters while keeping the wafer parameters and laser parameters constant. The signal acquisition and processing module 102 can be a high-speed FPGA module and can communicate with the industrial computer 101 through a PCIE interface. The FPGA module includes multi-channel high-speed ADC sampling, typically exceeding a 10M sampling rate. Four defect test channels 103 can be set, and their parameters are respectively wide-channel PMT (photomultiplier tube) 2x amplified signal, wide-channel PMT 0.5x amplified signal, narrow-channel PMT 2x amplified signal and narrow-channel PMT 0.5x amplified signal. The above four groups of defect test channels 103 can collect different signals respectively, and calculate and analyze them through the FPGA module, and merge them together to increase the accuracy of measurement data monitoring, thereby improving the accuracy of defect detection.

[0027] In this embodiment, when the laser is irradiated onto the wafer and measurement data is generated by the photodetector 201, the test data of each defect test channel 103 is first acquired and screened by the signal acquisition and processing module 102. Specifically, the signal acquisition and processing module 102 acquires the defect threshold of the test data of each defect test channel 103. When the test data is greater than the defect threshold, it is determined that there are defects or particles on the wafer. The signal acquisition and processing module 103 transmits the test data with a value greater than the defect threshold as defect data to the industrial computer 101. The industrial computer 101 analyzes the defect data and its associated data to obtain particle information on the wafer, facilitating the confirmation of the particle location and number on the wafer, so as to facilitate the removal of the above-mentioned particles. In this embodiment, the signal acquisition and processing module 102 pre-screens the test data, rather than having the industrial computer 101 screen all the test data. This effectively reduces the amount of computation required by the industrial computer 101, avoids a long defect detection process, effectively locks in the defect data, and improves the accuracy of defect detection.

[0028] Preferably, when the signal acquisition and processing module 102 is an FPGA module, communication between the signal acquisition and processing module 102 and the industrial computer 101 can be achieved via a PCIE interface. Firstly, using the FPGA module for threshold screening reduces the amount of data transmitted to the host computer, reducing the computational effort and alleviating the host computer's load. Secondly, using high-speed FPGA timing to acquire defect signals allows for real-time monitoring, improving the accuracy of defect signal location. Furthermore, the PCIE interface offers higher transmission speeds and greater bandwidth, enhancing the efficiency of wafer defect detection equipment.

[0029] Based on the same concept, an embodiment of the present invention provides a wafer defect detection method, which is based on the specific structure of a wafer defect detection device provided in this embodiment. The method flow is as follows: Figure 3 As shown in , the following steps are included:

[0030] Step S110 : The signal acquisition and processing module 102 obtains the defect threshold of the test data of each defect test channel 103 .

[0031] Step S120 : The signal acquisition and processing module 102 selects the test data greater than the defect threshold as defect data, and sends the defect data and its associated data to the industrial computer 101 .

[0032] In this embodiment, the defect data is test data indicating the presence of defects or particles, and particle information needs to be acquired based on this defect data. The signal acquisition and processing module 102 can simultaneously acquire associated data corresponding to the defect data. The associated data includes at least the measured motor position, facilitating the acquisition of defect data and position data with the same timing, avoiding mismatches between the defect data and position data, and facilitating accurate positioning of the defect data. For example, the FPGA module can simultaneously acquire the grating scale signal of the linear motor of the motion module through channel 104 and the encoder signal of the rotary motor through channel 105, promptly acquiring the position signal of the defect data and improving the accuracy of the positioning of the defect signal.

[0033] In step S130 , the industrial computer 101 obtains particle information of the wafer according to the defect data and its associated data; the particle information includes at least particle positions and particle quantities.

[0034] For example, the high-speed FPGA module collects channel data from defect test channel 103 before the actual measurement, calculates the defect threshold, and selects particles based on the defect threshold during the actual measurement. The module also correlates the timestamp and position signal of the motor with the same timing as the FPGA module. This data is then transmitted to industrial computer 101 (the host computer) via the PCIE interface. Industrial computer 101 then performs calculations and analysis based on the timestamp, position information, and particle information.

[0035] In this embodiment, when the laser is irradiated onto the wafer and measurement data is generated by the photodetector 201, the test data of each defect test channel 103 is first acquired and screened by the signal acquisition and processing module 102. Specifically, the signal acquisition and processing module 102 acquires the defect threshold of the test data of each defect test channel 103. When the test data is greater than the defect threshold, it is determined that there are defects or particles on the wafer. The signal acquisition and processing module 102 transmits the test data greater than the defect threshold as defect data to the industrial computer 101. The industrial computer 101 obtains the particle information of the wafer based on the defect data and its associated data analysis, which facilitates the confirmation of the particle position and particle number of the wafer so as to remove the above-mentioned particles. For example, in this embodiment, particles on the wafer can be removed by manual removal or equipment cleaning, and this embodiment does not specifically limit the specific particle removal method. In this embodiment, the signal acquisition and processing module 102 pre-screens the test data instead of screening all the test data through the industrial computer 101, which effectively reduces the amount of calculation of the industrial computer 101, avoids a long defect detection process, and effectively locks the defect data, thereby improving the accuracy of defect detection.

[0036] Another embodiment of the present invention provides another wafer defect detection method, such as Figure 4 As shown in , the difference from the first embodiment is that the process of obtaining the defect threshold in step S110 is specifically expanded. Specifically, the wafer defect detection method of this embodiment includes the following steps:

[0037] Step S1101 : Before acquiring test data, the signal acquisition and processing module 102 acquires channel signals of each defect test channel 103 within a first set time period.

[0038] Step S1102 : Acquire the defect threshold of each defect test channel 103 according to the channel signal of each defect test channel 103 .

[0039] The above steps S1101 to S1102 are the specific process of "the signal acquisition and processing module 102 obtains the defect threshold of the test data of each defect test channel 103". Before the formal defect detection is carried out, the channel signal can be obtained through a standard, defect-free wafer. For example, the signal acquisition and processing module 102 can collect the channel signal of each defect test channel 103 within a first set time period, and determine the defect threshold of each channel based on the channel signal. Optionally, determining the defect threshold of each defect test channel 103 based on the channel signal of each defect test channel 103 can include: obtaining the mean value mean and standard deviation sigma of the channel signal of each defect test channel 103 within the first set time period; obtaining the defect threshold Td = mean + n * sigma of each defect test channel 103; wherein 6≤n≤9. Of course, in this embodiment, the defect threshold Td can also be 2 to 3 times the mean value mean. This embodiment does not specifically limit the specific value of the defect threshold Td. The above-mentioned value ranges of the defect threshold Td can effectively filter defect data and improve the accuracy of defect detection.

[0040] After completing the above-mentioned defect threshold calibration process, step S120 and step S130 in the first embodiment may be continued.

[0041] In this embodiment, the defect threshold Td is determined for each defect test channel 103 so that the signal acquisition and processing module 102 can pre-screen the defect data more accurately, reduce the amount of data uploaded to the host computer, reduce the amount of calculation, reduce the load on the host computer, and further improve the efficiency of wafer defect detection.

[0042] In another embodiment of the present invention, Figure 5 As shown, the difference between this embodiment and the first embodiment is that the process of "the signal acquisition and processing module screening out defective data" in step 120 is described in detail, which may specifically include the following steps:

[0043] Step S1201 : The signal acquisition and processing module 102 acquires test data through each defect test channel 103 .

[0044] Step S1202 : The signal acquisition and processing module 102 selects test data with a value greater than a defect threshold as defect data.

[0045] Step S1203 : The signal acquisition and processing module 102 adds a timestamp to the defect data and its associated data, and sends the timestamp to the industrial computer 101 .

[0046] Optionally, before the signal acquisition and processing module 102 acquires test data from each defect test channel 103, the following steps may be performed: the industrial computer 101 controls the linear motor to move to the center of the wafer and controls the rotary motor to move to its initial position; the industrial computer 101 controls the laser module to emit laser light to the center of the wafer; and the industrial computer 101 controls the linear motor, rotary motor, and signal acquisition and processing module to start simultaneously. Thereafter, steps S1201 to S1203 are sequentially executed.

[0047] Steps S1201 to S1203 are the specific contents of "the signal acquisition and processing module 102 filters the test data greater than the defect threshold as defect data, and sends the defect data and its associated data to the industrial computer 101." Optionally, the measuring motor includes a linear motor and a rotary motor; the signal acquisition and processing module 102 loads a timestamp on the defect data and its associated data and sends it to the industrial computer 101. This may include: the signal acquisition and processing module 102 obtains the grating scale signal of the linear motor and the encoder signal of the rotary motor; the signal acquisition and processing module 102 loads a timestamp on the defect data, the grating scale signal of the linear motor, and the encoder signal of the rotary motor, so that the defect data, the grating scale signal of the linear motor, and the encoder signal of the rotary motor sent to the industrial computer 101 correspond to each other in time sequence.

[0048] While the FPGA module filters out defect data based on test data, it also collects the linear motor's scale signal, the rotary motor's encoder signal, and the defect's position signal on the wafer at that moment. These signals are then timestamped, ensuring a one-to-one correspondence between the linear motor's scale signal, the rotary motor's encoder signal, and the defect's position signal (defect data). This data is then transmitted to the host computer for processing. Based on the timestamp, motor position signal, and particle signal, the host computer creates a wafer particle location map and performs particle counts.

[0049] It should be noted that scattered light increases in intensity as particles grow larger. Therefore, when collecting scattered light from a specific area, the intensity of the scattered light corresponds to the particle size. Laser light is directed at the wafer surface at a specific angle, and a photodetector collects the scattered light from the wafer surface. The signal acquisition and processing module 102 then analyzes and processes the light to determine the presence of defects and plots a particle location map on the wafer. This embodiment can analyze and determine the particle size based on the size of the defect data.

[0050] After executing the above steps, step S130 is executed. Specifically in this embodiment, the industrial computer 101 can draw a particle position map of the wafer according to the timestamp, defect data and related data thereof to obtain particle information.

[0051] In an embodiment of the present invention, it is disclosed that when the signal acquisition and processing module 102 sends defect data and its related data to the industrial computer, the signal acquisition and processing module 102 loads a timestamp on the defect data, the grating scale signal of the linear motor and the encoder signal of the rotary motor, so that the defect data, the grating scale signal of the linear motor and the encoder signal of the rotary motor sent to the industrial computer 101 correspond one to one in time sequence, thereby improving the accuracy of defect position judgment, and the signal acquisition and processing module 102 integrates the defect data and its related data and sends them to the industrial computer 101 only after determining the specific defect data, thereby further reducing the data processing time of the industrial computer 101, improving the real-time performance of defect detection, and improving the defect detection efficiency of wafers.

[0052] Based on the above embodiment, before the signal acquisition and processing module 102 obtains the defect threshold value of the test data of each defect test channel 103, it can also include: the industrial computer 101 controls the laser module to irradiate the wafer at a set angle, so that the signal acquisition and processing module 102 performs linear and rotational leveling on the wafer according to the light-sensitive position of the image sensor; the industrial computer 101 controls the wafer to perform linear and rotational motion simultaneously, so that the signal acquisition and processing module 102 obtains the deviation between the center and the rotation center of the wafer and the direction of the wafer notch. To further improve the accuracy of wafer defect detection and eliminate interference from the arrangement device, this embodiment also requires linear and rotational leveling of the wafer before measuring and obtaining the defect threshold value, and corrects the deviation between the center and the rotation center of the wafer to improve the position accuracy of the defect signal of defect detection.

[0053] In a specific example, Figure 6 As shown, first, the signal acquisition and processing module 102 performs BPS signal acquisition through channel 106 to adjust the linear and rotational levels. When the wafer defect detection device is assembled or the structure changes, the horizontal and rotational movements of the wafer need to be re-leveled. For example, a wafer is placed on a disk, and a laser is irradiated onto the wafer at a certain angle. The wafer reflects the light and irradiates the CCD image sensor at a fixed position. The horizontal error is determined by detecting the change in the photosensitive position on the CCD image sensor. Specifically, if the wafer only moves linearly, the horizontal error is measured and determined, and then adjusted; if the wafer only moves rotationally, the rotational error is measured and determined, and then adjusted.

[0054] Second, the signal acquisition and processing module 102 collects BW signals through channel 107 to determine the deviation between the wafer center and the rotation center, as well as the orientation of the wafer edge (notch). Specifically, the industrial computer 101 controls the wafer to perform both linear and rotational motion. At the wafer edge, the linear and rotational motions are synchronized from the inside to the outside, collecting BW signals. When passing by the wafer edge (notch), a signal is detected. By analyzing the signal, the deviation between the wafer center and the rotation center, as well as the orientation of the wafer edge (notch), is determined.

[0055] Third, the signal acquisition and processing module 102 performs pre-measurement acquisition (PreScan) on the defect test channel 103. Before normal measurement, the linear and rotary motors move synchronously, capturing a short period of time on the defect test channel 103. The mean (mean) and standard deviation (sigma) of the signals in each channel are calculated, and the defect threshold is determined by adding 9*sigma to the mean.

[0056] Fourth, the signal acquisition and processing module 102 performs formal measurement acquisition (Measure) through the defect test channel 103. The linear motor moves to the center of the wafer, the rotary motor moves to the initial position, and the laser spot is focused on the center of the wafer. The formal measurement is started, the linear motor and the rotary motor move synchronously, and the FPGA module is triggered at the same time. The FPGA module collects the measurement data of the defect test channel 103, the grating scale signal of the linear motor and the encoder signal of the rotary motor. The defect test channel 103 is screened according to the defect threshold of each channel, and the signals exceeding the threshold are recorded and saved. At the same time, the FPGA module collects the grating scale signal of the linear motor and the encoder signal of the rotary motor, as well as the position signal of the defect on the wafer at this time, and loads the timestamp to achieve one-to-one correspondence in timing, and transmits the above data to the host computer for processing. The host computer draws a wafer particle position map and particle number statistics based on the timestamp, the motor position signal, and the particle signal.

[0057] Note that the above are only preferred embodiments of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments, and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments and may include many other equivalent embodiments without departing from the concept of the present invention. The scope of the present invention is determined by the scope of the appended claims.

Claims

1. A wafer defect detection method, characterized in that: include: The signal acquisition and processing module obtains the defect threshold of the test data of each defect test channel; The signal acquisition and processing module selects test data greater than the defect threshold as defect data, and sends the defect data and its associated data to the industrial computer; the associated data at least includes the measured motor position corresponding to the defect data; The industrial computer obtains the particle information of the wafer according to the defect data and its associated data; the particle information at least includes the particle position and the particle quantity.

2. The wafer defect detection method according to claim 1, wherein: The signal acquisition and processing module obtains the defect threshold of the test data of each defect test channel, including: Before acquiring the test data, the signal acquisition and processing module acquires the channel signals of each defect test channel within a first set time period; The defect threshold of each defect test channel is acquired according to the channel signal of each defect test channel.

3. The wafer defect detection method according to claim 2, wherein: Acquiring the defect threshold of each defect test channel according to the channel signal of each defect test channel includes: Obtaining the mean value mean and the standard deviation sigma of the channel signal of each of the defect test channels within the first set time period; Obtain a defect threshold Td=mean+n*sigma of each defect test channel; wherein 6≤n≤9.

4. The wafer defect detection method according to claim 1, wherein: The signal acquisition and processing module selects test data greater than the defect threshold as defect data, and sends the defect data and its associated data to the industrial computer, including: The signal acquisition and processing module obtains test data through each defect test channel; The signal acquisition and processing module selects test data greater than the defect threshold as defect data; The signal acquisition and processing module adds a timestamp to the defect data and its associated data, and sends the timestamp to the industrial computer.

5. The wafer defect detection method according to claim 4, wherein: The industrial computer obtains the particle information of the wafer according to the defect data and its associated data, including: The industrial computer draws a particle position map of the wafer according to the timestamp, the defect data and associated data thereof to obtain the particle information.

6. The wafer defect detection method according to claim 4, wherein: The measuring motor includes a linear motor and a rotary motor; the signal acquisition and processing module adds a timestamp to the defect data and its associated data and sends it to the industrial computer, including: The signal acquisition and processing module obtains the grating scale signal of the linear motor and the encoder signal of the rotary motor; The signal acquisition and processing module adds a timestamp to the defect data, the grating scale signal of the linear motor, and the encoder signal of the rotary motor, so that the defect data, the grating scale signal of the linear motor, and the encoder signal of the rotary motor sent to the industrial computer correspond one to one in time sequence.

7. The wafer defect detection method according to claim 4, wherein: Before the signal acquisition and processing module acquires test data through each defect test channel, it includes: The industrial computer controls the linear motor to move to the center of the wafer and controls the rotary motor to move to the initial position; The industrial computer controls the laser module to emit laser light to the center of the wafer; The industrial computer controls the linear motor, the rotary motor and the signal acquisition and processing module to start simultaneously.

8. The wafer defect detection method according to claim 1, wherein: Before the signal acquisition and processing module obtains the defect threshold of the test data of each defect test channel, it also includes: The industrial computer controls the laser module to irradiate the wafer at a set angle, so that the signal acquisition and processing module performs linear leveling and rotational leveling on the wafer according to the light-sensing position of the image sensor; The industrial computer controls the wafer to perform linear motion and rotational motion simultaneously, so that the signal acquisition and processing module obtains the deviation between the center of the wafer and the rotation center and the notch direction of the wafer.

9. A wafer defect detection device, characterized in that: A wafer defect detection method applicable to any one of claims 1 to 7, comprising: a laser module, a photodetector, a signal acquisition and processing module, and an industrial computer; The laser module is used to emit laser light to the wafer so that the photoelectric detector can obtain test data; The signal acquisition and processing module includes a plurality of defect test channels; the defect test channels are electrically connected to the photoelectric detector; The signal acquisition and processing module is used to obtain the defect threshold of the test data of each defect test channel; the signal acquisition and processing module is also used to filter the test data greater than the defect threshold as defect data, and send the defect data and its associated data to the industrial computer; the associated data at least includes the measured motor position corresponding to the defect data; The industrial computer is used to obtain particle information of the wafer according to the defect data and its associated data; the particle information at least includes particle positions and particle quantities.

10. The wafer defect detection device according to claim 9, wherein: The signal acquisition and processing module is an FPGA module; The signal acquisition and processing module communicates with the industrial computer via a PCIE interface.

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