Preparation method of semiconductor device

Abstract

The invention provides a preparation method of a semiconductor device, and the method comprises the steps: carrying out a first wet cleaning process on a semiconductor structure after a second dielectric layer and a first dielectric layer are etched, and before a barrier layer is etched, a large amount of polymer residues containing N, F and O plasmas generated in the process of etching the second dielectric layer and the first dielectric layer can be timely and effectively removed, then the through hole is formed in the etching barrier layer under the condition that no polymer residues exist, and then the second wet cleaning process is executed on the semiconductor structure after the through hole is formed in the etching barrier layer. Therefore, polymer residues containing N, F and O plasmas on the bottom wall, the side wall and the top of the through hole can be thoroughly removed, the packaging reliability is improved, the situation that the polymer residues adhere to the inner surface of the process chamber and fall on the surface of a wafer during subsequent operation is also avoided, the reliability of wafer etching is improved, and the production efficiency is improved. And the cleanness of the surface of the wafer is ensured.

Images