Gallium oxide solar blind photoelectric detector and preparation method and spectrum detection method thereof

Abstract

The invention provides a gallium oxide solar blind photoelectric detector and a preparation method and a spectrum detection method thereof, which can be applied to the technical field of ultraviolet detection. The gallium oxide solar blind photoelectric detector comprises a sapphire substrate; the aluminum gallium oxide thin film is arranged at the upper part of the sapphire substrate, the aluminum gallium oxide thin film comprises a plurality of photosensitive layers, and the content of an aluminum component in the plurality of photosensitive layers is reduced layer by layer upwards from the sapphire substrate; the gallium oxide thin film is arranged at the upper part of the aluminum gallium oxide thin film; the positive electrode and the negative electrode are arranged at the upper part of the gallium oxide film.

Description

Technical Field

[0001] The present disclosure relates to the field of ultraviolet detection technology, and in particular to a gallium oxide solar-blind photodetector and a preparation method and a spectrum detection method thereof. Background Art

[0002] Solar-blind light signals have a high signal-to-noise ratio and strong anti-interference capabilities. Therefore, solar-blind light is detected by solar-blind photodetectors for applications in fields such as ozone hole monitoring. However, currently, single gallium oxide solar-blind photodetectors can only detect solar-blind light within a fixed wavelength range, limiting the scope of solar-blind light detection. Summary of the Invention

[0003] In view of the above problems, the present disclosure provides a gallium oxide solar-blind photodetector, a preparation method thereof, and a spectral detection method.

[0004] According to a first aspect of the present disclosure, a gallium oxide solar-blind photodetector is provided, comprising: a sapphire substrate; an aluminum gallium oxide thin film disposed on top of the sapphire substrate, wherein the aluminum gallium oxide thin film comprises a plurality of photosensitive layers, and the content of aluminum components in the plurality of photosensitive layers decreases layer by layer from the sapphire substrate upward; a gallium oxide thin film disposed on top of the aluminum gallium oxide thin film; and a positive electrode and a negative electrode disposed on top of the gallium oxide thin film.

[0005] According to an embodiment of the present disclosure, the thickness of the aluminum gallium oxide film is 10 nm to 1.5 μm, and the thickness of the gallium oxide film is 10 nm to 1.5 μm.

[0006] According to an embodiment of the present disclosure, the number of photosensitive layers in the aluminum gallium oxide thin film is 2 to 20.

[0007] According to an embodiment of the present disclosure, the photosensitive layer in the aluminum gallium oxyoxide thin film functions in response to the bias voltage applied between the positive electrode and the negative electrode.

[0008] According to an embodiment of the present disclosure, by controlling the bias voltage applied between the positive electrode and the negative electrode, the photosensitive layer in the aluminum gallium oxide thin film changes, thereby controlling the detection wavelength range of the gallium oxide solar-blind photodetector.

[0009] According to an embodiment of the present disclosure, by controlling the increase in the bias voltage applied between the above-mentioned positive electrode and the above-mentioned negative electrode, the range of the active photosensitive layer in the above-mentioned aluminum gallium oxide thin film is extended toward the above-mentioned sapphire substrate, so as to increase the spectral response of the above-mentioned gallium oxide solar-blind photodetector.

[0010] According to an embodiment of the present disclosure, the wavelength of light detected by the photosensitive layer in the aluminum gallium oxide thin film increases layer by layer from the sapphire substrate upward.

[0011] According to an embodiment of the present disclosure, the thickness of the positive electrode is 1 nm to 1500 nm, and the thickness of the negative electrode is 1 nm to 1500 nm.

[0012] A second aspect of the present disclosure provides a method for preparing a gallium oxide solar-blind photodetector, the method comprising: forming an aluminum gallium oxide thin film on an upper portion of a sapphire substrate, wherein the aluminum gallium oxide thin film comprises a plurality of photosensitive layers, and the content of aluminum components in the plurality of photosensitive layers decreases layer by layer from the sapphire substrate upward; forming a gallium oxide thin film on an upper portion of the aluminum gallium oxide thin film; and forming a positive electrode and a negative electrode on an upper portion of the gallium oxide thin film.

[0013] The third method disclosed herein provides a spectral detection method, which includes: applying different bias voltages between the positive electrode and the negative electrode in a gallium oxide day-blind photodetector, utilizing a photosensitive layer corresponding to the configured voltage in the aluminum gallium oxide thin film in the gallium oxide day-blind photodetector, absorbing and spectrally detecting light of a wavelength corresponding to the photosensitive layer, thereby achieving control of the detection wavelength range of the gallium oxide day-blind photodetector and spectral detection of light of different wavelengths.

[0014] The present disclosure provides a gallium oxide solar-blind photodetector, a preparation method thereof, and a spectral detection method. The gallium oxide solar-blind photodetector adopts a multi-layer photosensitive layer in which the aluminum component content decreases layer by layer from the sapphire substrate upward, so that the photosensitive layer that plays a major role can be changed by the magnitude of the bias voltage applied between the positive electrode and the negative electrode, thereby allowing different photosensitive layers to play a role to realize wide-spectrum solar-blind light detection and control the wavelength range of detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The above contents and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0016] Figure 1 Schematically shows a schematic diagram of a gallium oxide solar-blind photodetector according to an embodiment of the present disclosure;

[0017] Figure 2 Schematic diagram of a photosensitive layer functioning under a bias voltage according to an embodiment of the present disclosure is schematically shown;

[0018] Figure 3 Schematically shows a schematic diagram of a photosensitive layer functioning under a bias voltage according to another embodiment of the present disclosure;

[0019] Figure 4 A flow chart schematically illustrates a method for preparing a gallium oxide solar-blind photodetector according to an embodiment of the present disclosure; and

[0020] Figure 5The following schematically shows a preparation process diagram of a gallium oxide solar-blind photodetector according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0021] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are merely exemplary and are not intended to limit the scope of the present disclosure. In the detailed description below, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0022] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise," "include," etc. used herein indicate the presence of the features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0023] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0024] When expressions such as "at least one of A, B, and C, etc." are used, they should generally be interpreted in accordance with the meaning commonly understood by those skilled in the art (for example, "a system having at least one of A, B, and C" should include but is not limited to a system having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, C, etc.).

[0025] The Earth's atmosphere absorbs ultraviolet light from the sun in the wavelength range of 200nm to 280nm, making this wavelength band "solar-blind." However, signals within this spectral region can be effectively collected without being affected by solar radiation, resulting in a high signal-to-noise ratio and strong anti-interference capabilities. Due to these excellent properties, solar-blind photodetectors are currently used in flame detection, ozone hole monitoring, space communications, missile guidance, radar, and other fields.

[0026] Gallium oxide is considered one of the most promising materials for solar-blind photodetectors because its bandgap (4.9 eV) directly corresponds to the solar-blind wavelength band. However, despite the bandgap of gallium oxide directly corresponding to the solar-blind wavelength band, the detection wavelength range of current single gallium oxide solar-blind ultraviolet photodetectors is fixed, mainly concentrated at 254 nm, limiting the application range of solar-blind light detection. To this end, embodiments of the present disclosure provide a gallium oxide solar-blind photodetector to control the detection wavelength range and expand the application range of solar-blind light detection.

[0027] Figure 1 A schematic diagram of a gallium oxide solar-blind photodetector according to an embodiment of the present disclosure is schematically shown.

[0028] like Figure 1 As shown, the gallium oxide solar-blind photodetector according to this embodiment may include a sapphire substrate 1, an aluminum gallium oxide film 2 disposed on the sapphire substrate 1, a gallium oxide film 3 disposed on the aluminum gallium oxide film 2, and a positive electrode and a negative electrode disposed on the gallium oxide film 3. For example, Figure 1 The positive electrode 4 and the negative electrode 5 are provided.

[0029] The AlGaO thin film 2 may include multiple photosensitive layers, wherein the content of the aluminum component in the multiple photosensitive layers decreases layer by layer from the sapphire substrate 1 upwards.

[0030] Specifically, the bandgap width varies depending on the aluminum content in the photosensitive layer. A photosensitive layer with a high aluminum content has a wider bandgap, allowing it to absorb shorter-wavelength, day-blinding light. A photosensitive layer with a low aluminum content has a lower bandgap, allowing it to absorb longer-wavelength, day-blinding light.

[0031] According to an embodiment of the present disclosure, the sapphire substrate 1 may be a sapphire substrate of any crystal plane. For example, the sapphire substrate may include one of the following: a sapphire substrate of a C, M, R, or A crystal plane.

[0032] In one embodiment, the thickness of the aluminum gallium oxide film 2 may be 10 nm to 1.5 μm, and the thickness of the gallium oxide film 3 may be 10 nm to 1.5 μm.

[0033] In one embodiment, the number of photosensitive layers in the AlGaO thin film 2 is 2-20.

[0034] The thickness of each photosensitive layer in the AlGaO thin film 2 can be set as needed.

[0035] In one embodiment, the thickness of the positive electrode 4 is 1 nm to 1500 nm, and the thickness of the negative electrode 5 is 1 nm to 1500 nm.

[0036] According to the embodiment of the present disclosure, if the thickness of the positive electrode 4 and the negative electrode 5 is too thick, it will affect the conductivity of the electrode and also cause a certain amount of material waste. Therefore, the thickness of the positive electrode 4 and the negative electrode 5 can be 1nm~1500nm to avoid material waste while ensuring conductivity.

[0037] According to an embodiment of the present disclosure, a gallium oxide solar-blind photodetector uses a multi-layer photosensitive layer in which the aluminum component content decreases layer by layer from the sapphire substrate upward, so that the photosensitive layer that plays a major role can be changed by applying the magnitude of the bias voltage between the positive electrode and the negative electrode, thereby allowing different photosensitive layers to play a role to achieve wide-spectrum solar-blind light detection and control the wavelength range of detection.

[0038] According to the embodiment of the present disclosure, the photosensitive layer in the aluminum gallium oxyoxide thin film 2 functions in response to the bias voltage applied between the positive electrode 4 and the negative electrode 5 .

[0039] According to the embodiment of the present disclosure, based on the different bias voltages applied between the positive electrode 4 and the negative electrode 5, the generated electric field is distributed in different photosensitive layers. Therefore, the photosensitive layer where the electric field is distributed is the photosensitive layer corresponding to the bias voltage. Under this bias voltage, the photosensitive layer where the electric field is distributed takes effect and can absorb and detect ultraviolet light.

[0040] According to an embodiment of the present disclosure, by controlling the bias voltage applied between the positive electrode and the negative electrode, the active photosensitive layer in the aluminum gallium oxide thin film is changed to achieve control of the detection wavelength range of the gallium oxide solar-blind photodetector.

[0041] In the following example, the aluminum gallium oxide film 2 includes four photosensitive layers. The aluminum content in these four photosensitive layers decreases layer by layer from the sapphire substrate 1 upwards. That is, the aluminum content in the photosensitive layer 2_1, the photosensitive layer 2_2, the photosensitive layer 2_3, and the photosensitive layer 2_4 decreases layer by layer.

[0042] Figure 2 A schematic diagram of a photosensitive layer functioning under a bias voltage according to an embodiment of the present disclosure is schematically shown.

[0043] like Figure 2 As shown in FIG, when the electric field generated by controlling the bias voltage applied between the positive electrode 4 and the negative electrode 5 is distributed in the gallium oxide film 3 and the photosensitive layer 2_4, the active photosensitive layer in the aluminum gallium oxide film 2 is the photosensitive layer 2_4.

[0044] Figure 3 A schematic diagram of a photosensitive layer functioning under a bias voltage according to another embodiment of the present disclosure is schematically shown.

[0045] like Figure 3As shown in the figure, when the electric field generated by controlling the bias voltage applied between the positive electrode 4 and the negative electrode 5 is distributed in the gallium oxide film 3, the photosensitive layer 2_4, the photosensitive layer 2_3, and the photosensitive layer 2_2, the active photosensitive layers in the aluminum gallium oxide film 2 are the photosensitive layer 2_1, the photosensitive layer 2_2, the photosensitive layer 2_3, and the photosensitive layer 2_4.

[0046] Furthermore, since the content of aluminum components in the photosensitive layers 2_1 , 2_2 , 2_3 and 2_4 is different, the wavelengths of light that can be absorbed by the photosensitive layers 2_1 , 2_2 , 2_3 and 2_4 are also different.

[0047] Therefore, by controlling the bias voltage applied between the positive electrode 4 and the negative electrode 5 , the detection wavelength range of the gallium oxide solar-blind photodetector can be controlled.

[0048] According to an embodiment of the present disclosure, by controlling the bias voltage applied between the positive electrode and the negative electrode, the range of the active photosensitive layer in the aluminum gallium oxide thin film is extended toward the sapphire substrate, thereby increasing the spectral response of the gallium oxide solar-blind photodetector.

[0049] Since the aluminum content of the photosensitive layer in the AlGaO film 3 decreases layer by layer from the sapphire substrate upward, Figure 2 and Figure 3 For example, Figure 2 The bias voltage applied between the positive electrode 4 and the negative electrode 5 is less than Figure 3 A bias voltage is applied between the positive electrode 4 and the negative electrode 5.

[0050] Specifically, when the bias voltage applied between the positive electrode 4 and the negative electrode 5 is small, the electric field is mainly distributed in the photosensitive layer close to the electrode surface, and the photosensitive layer close to the electrode surface plays a major role; when the bias voltage applied between the positive electrode 4 and the negative electrode 5 is large, the range of the electric field distribution extends toward the sapphire substrate, and the range of the photosensitive layer that plays a major role also extends toward the sapphire substrate.

[0051] Therefore, by controlling the bias voltage applied between the positive electrode 4 and the negative electrode 5 to increase, the range of the electric field distribution generated by the bias voltage extends toward the sapphire substrate 1, so that the range of the active photosensitive layer in the aluminum gallium oxide thin film 3 also extends toward the sapphire substrate 1, thereby achieving the control of the detection wavelength range of the gallium oxide solar-blind photodetector while increasing the spectral response of the gallium oxide solar-blind photodetector.

[0052] According to the embodiment of the present disclosure, since the aluminum component content of the photosensitive layer in the AlGaO thin film 3 decreases layer by layer from the sapphire substrate upward, the wavelength of light detected by the photosensitive layer in the AlGaO thin film increases layer by layer from the sapphire substrate 1 upward.

[0053] According to an embodiment of the present disclosure, ultraviolet light is incident from the sapphire substrate 1 in the gallium oxide solar-blind photodetector.

[0054] Based on the above, when the bias voltage applied between positive electrode 4 and negative electrode 5 is low, the photosensitive layer with a low aluminum content near the electrodes functions to absorb and detect longer-wavelength day-blind light. However, shorter-wavelength day-blind light incident through sapphire substrate 1 is absorbed only by the photosensitive layer with a high aluminum content and is not detected. This allows control over the wavelength range detected by the gallium oxide day-blind photodetector.

[0055] Figure 4 The flowchart of the method for preparing the gallium oxide solar-blind photodetector according to an embodiment of the present disclosure is schematically shown.

[0056] like Figure 4 As shown, the preparation method 400 includes operations S410 to S430.

[0057] Figure 5 The following schematically shows a preparation process diagram of a gallium oxide solar-blind photodetector according to an embodiment of the present disclosure.

[0058] In operation S410 , an aluminum gallium oxide thin film is formed on an upper portion of a sapphire substrate.

[0059] The aluminum gallium oxide film includes multiple photosensitive layers, and the content of aluminum components in the multiple photosensitive layers decreases layer by layer from the sapphire substrate upwards.

[0060] According to an embodiment of the present disclosure, before performing operation S410 , the sapphire substrate 1 needs to be cleaned, blow-dried, and then baked.

[0061] In one embodiment, taking a double-polished C-surface sapphire substrate as an example, the double-polished C-surface sapphire substrate is ultrasonically treated in acetone, isopropyl alcohol, and deionized water for 5 minutes, taken out, blown dry with nitrogen, and then baked on a 180°C hot plate for 5 minutes.

[0062] The solution for cleaning the sapphire substrate 1 , the gas for drying the sapphire substrate 1 , and the temperature and time for baking the sapphire substrate 1 can all be selected and set as needed.

[0063] like Figure 5 As shown in FIG, an aluminum gallium oxide thin film 2 is formed on an upper portion of a sapphire substrate 1.

[0064] In one embodiment, a metal-organic chemical vapor deposition (MOCVD) method is used to gradually grow multiple photosensitive layers with decreasing aluminum content.

[0065] The content of aluminum components in the photosensitive layer can be controlled by adjusting the ratio of the aluminum source to the gallium source.

[0066] According to an embodiment of the present disclosure, the growth method of the aluminum gallium oxide film 2 includes, but is not limited to, one of the following: metal organic chemical vapor deposition, radio frequency magnetron sputtering, MBE (Molecular Beam Epitaxy), ALD (Atomic Layer Deposition), HVPE (Hydride Vapor Phase Epitaxy), and mist-CVD (Mist Chemical Vapor Deposition). The method for controlling the aluminum content in the photosensitive layer varies depending on the film growth method.

[0067] In operation S420 , a gallium oxide thin film is formed on the aluminum gallium oxyoxide thin film.

[0068] like Figure 5 As shown in FIG, a gallium oxide thin film 3 is formed on the aluminum gallium oxide thin film 2.

[0069] In one embodiment, the gallium oxide thin film 3 is grown by metal organic chemical vapor deposition.

[0070] According to an embodiment of the present disclosure, the growth method of the gallium oxide thin film 3 includes but is not limited to one of the following: metal organic chemical vapor deposition, radio frequency magnetron sputtering, MBE (Molecular Beam Epitaxy), ALD (Atomic Layer Deposition), HVPE (Hydride Vapor Phase Epitaxy), and mist-CVD (Mist Chemical Vapor Deposition).

[0071] In operation S430 , a positive electrode and a negative electrode are formed on an upper portion of the gallium oxide thin film.

[0072] like Figure 5 As shown in FIG, a positive electrode 4 and a negative electrode 5 are formed on the upper portion of the gallium oxide thin film 3, thereby completing the preparation of the gallium oxide solar-blind photodetector.

[0073] In one embodiment, the material of the positive electrode 4 and the negative electrode 5 may include at least one of the following: Ti, Ni, Al, Cu and Au.

[0074] The positive electrode 4 and the negative electrode 5 may each include at least one metal layer.

[0075] In one embodiment, standard photolithography and electron beam evaporation can be used to grow metal titanium / gold as the positive electrode 4 or negative electrode 5, with thicknesses of 40 nm and 60 nm respectively, where metal titanium / gold can represent a stack of titanium and gold.

[0076] According to an embodiment of the present disclosure, by preparing a multi-layer photosensitive layer in which the aluminum component content decreases layer by layer from the sapphire substrate upward, the photosensitive layer that plays a major role is changed by the magnitude of the bias voltage applied between the positive electrode and the negative electrode, so that different photosensitive layers can play a role to achieve wide-spectrum day-blind light detection and control the wavelength range of detection.

[0077] Figures 1 to 3 as well as Figure 5 The structures and shapes of the various layers of the gallium oxide solar-blind photodetector shown in the figure are examples only.

[0078] Embodiments of the present disclosure also provide a spectral detection method. The spectral detection method includes applying different bias voltages between the positive electrode and the negative electrode of a gallium oxide solar-blind photodetector, utilizing a photosensitive layer in an aluminum gallium oxide thin film in the gallium oxide solar-blind photodetector corresponding to the configured voltage to absorb and spectrally detect light of a wavelength corresponding to the photosensitive layer, thereby achieving control of the detection wavelength range of the gallium oxide solar-blind photodetector and spectral detection of light of different wavelengths.

[0079] According to an embodiment of the present disclosure, when performing spectral detection, different bias voltages are controlled to be applied so that the electric field is distributed in different photosensitive layers, thereby changing the photosensitive layer that plays a major role, thereby allowing different photosensitive layers to play a role to achieve wide-spectrum detection and control the wavelength range of detection.

[0080] According to the embodiments of the present disclosure, based on a gallium oxide solar-blind photodetector, by controlling the bias voltage between the positive and negative electrodes, the primary active photosensitive layer is altered, achieving broad-spectrum solar-blind light detection and controlling the wavelength range of detection. Furthermore, the present disclosure utilizes the wide bandgap characteristics of aluminum gallium oxide thin films to compensate for the narrow spectral response of gallium oxide materials, broadening the application range of gallium oxide solar-blind ultraviolet detection.

[0081] Those skilled in the art will appreciate that the features described in the various embodiments of the present disclosure may be combined and / or coupled in various ways, even if such combinations or couplings are not explicitly described in the present disclosure. In particular, the features described in the various embodiments of the present disclosure may be combined and / or coupled in various ways without departing from the spirit and teachings of the present disclosure. All such combinations and / or couplings fall within the scope of the present disclosure.

[0082] The above describes the embodiments of the present disclosure. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of the present disclosure. Although each embodiment has been described separately above, this does not mean that the measures in each embodiment cannot be advantageously used in combination. Without departing from the scope of the present disclosure, those skilled in the art may make various substitutions and modifications, which should all fall within the scope of the present disclosure.

Claims

1. A gallium oxide solar-blind photodetector, characterized in that: include: Sapphire substrate; An aluminum gallium oxide thin film is provided on the sapphire substrate, wherein the aluminum gallium oxide thin film includes multiple photosensitive layers, and the content of aluminum components in the multiple photosensitive layers decreases layer by layer from the sapphire substrate upward; A gallium oxide film disposed on top of the aluminum gallium oxide film; A positive electrode and a negative electrode are arranged on top of the gallium oxide film.

2. The gallium oxide solar-blind photodetector according to claim 1, characterized in that: The thickness of the aluminum gallium oxide film is 10 nm to 1.5 μm, and the thickness of the gallium oxide film is 10 nm to 1.5 μm.

3. The gallium oxide solar-blind photodetector according to claim 2, characterized in that: The number of photosensitive layers in the aluminum gallium oxide thin film is 2 to 20.

4. The gallium oxide solar-blind photodetector according to claim 1, characterized in that: The photosensitive layer in the aluminum gallium oxyoxide thin film functions in response to a bias voltage applied between the positive electrode and the negative electrode.

5. The gallium oxide solar-blind photodetector according to claim 4, characterized in that: By controlling the bias voltage applied between the positive electrode and the negative electrode, the active photosensitive layer in the aluminum gallium oxide thin film changes, thereby achieving control of the detection wavelength range of the gallium oxide solar-blind photodetector.

6. The gallium oxide solar-blind photodetector according to claim 5, characterized in that: By controlling the bias voltage applied between the positive electrode and the negative electrode to increase, the range of the active photosensitive layer in the aluminum gallium oxide thin film extends toward the sapphire substrate, thereby increasing the spectral response of the gallium oxide solar-blind photodetector.

7. The gallium oxide solar-blind photodetector according to claim 5, characterized in that: From the sapphire substrate upward, the wavelength of light detected by the photosensitive layer in the aluminum gallium oxide thin film increases layer by layer.

8. The gallium oxide solar-blind photodetector according to any one of claims 1 to 7, characterized in that: The thickness of the positive electrode is 1 nm to 1500 nm, and the thickness of the negative electrode is 1 nm to 1500 nm.

9. A method for preparing a gallium oxide solar-blind photodetector, characterized in that: The preparation method comprises: forming an aluminum gallium oxide thin film on a sapphire substrate, wherein the aluminum gallium oxide thin film includes multiple photosensitive layers, and the content of aluminum components in the multiple photosensitive layers decreases layer by layer from the sapphire substrate upward; forming a gallium oxide film on the aluminum gallium oxide film; A positive electrode and a negative electrode are formed on the gallium oxide thin film.

10. A spectrum detection method, characterized in that: Using the gallium oxide solar-blind photodetector according to any one of claims 1 to 8, the method comprises: By applying different bias voltages between the positive electrode and the negative electrode in the gallium oxide solar-blind photodetector, and utilizing the photosensitive layer corresponding to the configured voltage in the aluminum gallium oxide thin film in the gallium oxide solar-blind photodetector, light of a wavelength corresponding to the photosensitive layer is absorbed and spectrally detected, thereby achieving control of the detection wavelength range of the gallium oxide solar-blind photodetector and spectral detection of light of different wavelengths.

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