Photoelectric detector, photoelectric detection system and photoelectric detection method

Abstract

The invention discloses a photoelectric detector, a photoelectric detection system and a photoelectric detection method. The photoelectric detector comprises at least two transparent photoelectric detection arrays. The at least two transparent photoelectric detection arrays are stacked in parallel at a preset interval along the optical axis direction to form at least two layers of transparent photoelectric detection arrays; under the condition that an optical signal of a light source penetrates through each layer of transparent photoelectric detection array, each layer of transparent photoelectric detection array converts the optical signal into a group of photo-generated voltage signals, and correspondingly generates a photo-generated voltage image on a detection plane of each layer of transparent photoelectric detection array; each group of photo-generated voltage signals is different, and each photo-generated voltage image is different; and determining the space coordinates of the light source according to each group of different photo-generated voltage signals. The photoelectric detector provided by the embodiment of the invention is low in energy consumption, small in size and easy to integrate.

Description

Technical Field

[0001] The present disclosure relates to the field of optoelectronic technology, and in particular to a photoelectric detector, a photoelectric detection system, and a photoelectric detection method. Background Art

[0002] Three-dimensional light detection technology aims to accurately reproduce the spatial relationship between light sources and objects in the real world, playing a vital role in industrial modeling, computer vision, augmented / mixed reality, and digital twins. Leveraging advanced sensors and algorithms, it is possible to precisely measure and reconstruct light sources or objects in three-dimensional space, providing characteristic information such as position, angle, and intensity. Mainstream three-dimensional light detection technologies (such as active lidar or structured light cameras) determine the position and angle of objects by analyzing the time of flight of light. However, this typically requires the coordinated operation of multiple cameras and light sources, facing challenges in energy consumption and device miniaturization. Inspired by human binocular vision, researchers have attempted to use multiple passive optical cameras to capture images of objects at different positions and focal lengths. Combined with modern machine learning algorithms, these cameras can comprehensively determine the object's position and angle in space. This approach has achieved high recognition accuracy, but trade-offs still exist in terms of the number of cameras, focal length, and algorithm complexity. In recent years, new spatial light or light field detection systems have been proposed. These include the use of photon / electronic arrays and patterning, metasurfaces, and pixelated color-to-space conversion to acquire spatial light information. These strategies have achieved significant progress in detection. However, there are still problems such as high energy consumption, large size and difficulty in integration. Summary of the Invention

[0003] The purpose of the embodiments of the present application is to provide a photoelectric detector, a photoelectric detection system and a photoelectric detection method to solve the problems of high energy consumption, large size and difficulty in integration in the prior art.

[0004] In a first aspect, an embodiment of the present application provides a photodetector comprising: at least two transparent photodetection arrays;

[0005] At least two transparent photoelectric detection arrays are stacked in parallel at a preset interval along the optical axis to form at least two layers of transparent photoelectric detection arrays;

[0006] When the light signal of the light source penetrates each layer of the transparent photodetection array, each layer of the transparent photodetection array converts the light signal into a set of photogenerated voltage signals and generates a photogenerated voltage image on the detection plane of each layer of the transparent photodetection array accordingly; each set of photogenerated voltage signals is different, and each photogenerated voltage image is different; the spatial coordinates of the light source are determined based on the different sets of photogenerated voltage signals.

[0007] In one possible implementation, the transparent photoelectric detection array includes a plurality of detection units arranged in an array;

[0008] Each detection unit includes: a transparent electrode layer, a hole transport layer, an organic semiconductor photoactive layer, an electron transport layer, a buffer layer and a top electrode layer arranged in sequence along a first direction.

[0009] In a possible implementation, the thickness of the top electrode layer is nanometer-scale.

[0010] In a possible implementation, the preset spacing is in millimeters.

[0011] In a second aspect, an embodiment of the present application provides a photoelectric detection system, comprising:

[0012] A transparent photodetector comprising at least two transparent photodetection arrays, wherein the at least two transparent photodetection arrays are stacked in parallel with a preset spacing along an optical axis to form at least two layers of transparent photodetection arrays; when a light signal from a light source penetrates each layer of the transparent photodetection arrays, each layer of the transparent photodetection arrays converts the light signal into a set of photogenerated voltage signals and generates a photogenerated voltage image on a detection plane of each layer of the transparent photodetection arrays; each set of photogenerated voltage signals is different, and each photogenerated voltage image is different;

[0013] a collection device, electrically connected to each of the transparent photodetection arrays, for collecting the photogenerated voltage signals of each layer of the transparent photodetection array and outputting each group of collected photogenerated voltage signals, wherein each group of photogenerated voltage signals is different;

[0014] The electronic device is electrically connected to the acquisition device and is used to receive each set of photovoltaic voltage signals and determine the spatial coordinates of the light source according to each set of different photovoltaic voltage signals.

[0015] In a possible implementation, the device further includes at least two flexible circuit boards; the transparent photodetection arrays are connected to the flexible circuit boards in a one-to-one correspondence;

[0016] Each row of top electrode layers and each column of transparent electrode layers of the transparent photodetection array are connected to a flexible circuit board, and the flexible circuit board is connected to a collection device.

[0017] In a third aspect, an embodiment of the present application provides a photoelectric detection method, comprising:

[0018] Obtaining at least two groups of photogenerated voltage signals corresponding to at least two layers of transparent photodetection arrays, wherein each group of photogenerated voltage signals is different;

[0019] Determining the center coordinates and diameter of the photo-generated voltage image of the detection plane of each layer of the transparent photodetection array according to each group of photo-generated voltage signals;

[0020] Determining the pitch incident angle and the heading incident angle of the light source according to the center coordinates of the photo-generated voltage image of the detection plane of each layer of the transparent photoelectric detection array;

[0021] Determine the distance from the first layer of transparent photodetection arrays to the light source based on the diameter of the photovoltage image on the detection plane of each layer of transparent photodetection arrays, the preset spacing between the transparent photodetection arrays, and the relationship between at least two triangles formed by the maximum light, the optical axis, and at least two layers of transparent photodetection arrays;

[0022] The spatial coordinates of the light source are determined according to the distance from the first-layer transparent photoelectric detection array to the light source, the pitch incident angle, and the heading incident angle.

[0023] In one possible implementation, determining the pitch incident angle and the heading incident angle of the light source according to the center coordinates of the photo-generated voltage image of the detection plane of each layer of the transparent photodetection array includes:

[0024] Use Formula 1 to determine the heading angle of incidence;

[0025]

[0026] Use Formula 2 to determine the pitch angle of incidence;

[0027]

[0028] Where θ is the heading angle of incidence, is the pitch incident angle, (x0, y0, z0) is the center coordinate of the photovoltage image of the first layer transparent photodetection array, and (x1, y1, z1) is the center coordinate of the photovoltage image of the second layer transparent photodetection array.

[0029] In one possible implementation, the distance between the first layer of transparent photoelectric detection array and the light source is proportional to the preset spacing between two adjacent layers of transparent photoelectric detection arrays;

[0030] The distance between the first transparent photoelectric detection array and the light source is proportional to the diameter of the photo-generated voltage image of the first transparent photoelectric detection array;

[0031] The distance between the first transparent photodetection array and the light source is inversely proportional to the first difference, which is the diameter of the photovoltage image of the second transparent photodetection array minus the diameter of the photovoltage image of the first transparent photodetection array.

[0032] In one possible implementation, determining the center coordinates and diameter of the photo-generated voltage image of the detection plane of each layer of the transparent photodetection array according to each set of photo-generated voltage signals includes:

[0033] According to each set of photogenerated voltage signals, initial parameters of the two-dimensional Gaussian model are obtained; the initial parameters include initial peak value, initial center coordinates, initial first standard deviation, initial second standard deviation and initial background value;

[0034] According to the initial parameters, a two-dimensional Gaussian model is constructed and the function value of the two-dimensional Gaussian model is calculated;

[0035] The actual function value is fitted to the function of the two-dimensional Gaussian model using a nonlinear least squares fitting algorithm, and the initial parameters of the two-dimensional Gaussian model are continuously adjusted;

[0036] If the change in the initial parameters meets the preset conditions, the fitting results are output; the fitting results include the actual peak value, the actual center coordinates, the actual first standard deviation, the actual second standard deviation and the actual background value; wherein the actual center coordinates are the center coordinates of the photovoltage image of the detection plane of the transparent photodetection array;

[0037] The diameter of the photo-generated voltage image of the detection plane of the transparent photodetection array is determined using the actual first standard deviation and the actual second standard deviation.

[0038] The photodetector provided in the embodiment of the present application includes at least two transparent photodetection arrays; the at least two transparent photodetection arrays are stacked in parallel at a preset spacing along the optical axis to form at least two layers of transparent photodetection arrays; when the light signal of the light source penetrates each layer of the transparent photodetection array, each layer of the transparent photodetection array converts the light signal into a group of photogenerated voltage signals, and generates a photogenerated voltage image on the detection plane of each layer of the transparent photodetection array; each group of photogenerated voltage signals is different, and each photogenerated voltage image is different; the spatial coordinates of the light source are determined based on the different groups of photogenerated voltage signals. The photodetector provided in the embodiment of the present application has low energy consumption, small size, and is easy to integrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 A schematic top view of a transparent photodetector array (TPD) provided in an embodiment of the present application;

[0040] Figure 2 A side view of a detection unit provided in an embodiment of the present application;

[0041] Figure 3 A schematic structural diagram of a photoelectric detection system provided in an embodiment of the present application;

[0042] Figure 4 A detection schematic diagram of a photoelectric detection system provided in an embodiment of the present application;

[0043] Figure 5Normalized photovoltage images of a photoelectric detection system provided in an embodiment of the present application at different incident angles of the light source;

[0044] Figure 6 Normalized photovoltage images of a photoelectric detection system provided in an embodiment of the present application at different incident distances of a light source;

[0045] Figure 7 A schematic diagram of a flow chart of a photoelectric detection method provided in an embodiment of the present application;

[0046] Figure 8 is a flow chart of step S10. DETAILED DESCRIPTION

[0047] Various aspects and features of the present application are described herein with reference to the accompanying drawings.

[0048] It should be understood that various modifications may be made to the embodiments of the present application. Therefore, the above description should not be considered as limiting, but merely as an example of an embodiment. Other modifications within the scope and spirit of the present application will occur to those skilled in the art.

[0049] The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the present application and, together with the general description of the present application given above and the detailed description of the embodiments given below, serve to explain the principles of the present application.

[0050] These and other characteristics of the present application will become apparent from the following description of a preferred form of embodiment given as a non-limiting example with reference to the accompanying drawings.

[0051] It should also be understood that although the present application has been described with reference to certain specific examples, those skilled in the art will readily be able to implement many other equivalent forms of the present application.

[0052] The above and other aspects, features and advantages of the present application will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings.

[0053] Specific embodiments of the present application will be described hereinafter with reference to the accompanying drawings; however, it should be understood that the embodiments described are merely examples of the present application and may be implemented in a variety of ways. Familiar and / or repetitive functions and structures are not described in detail to avoid obscuring the present application with unnecessary or redundant details. Therefore, the specific structural and functional details described herein are not intended to be limiting, but rather serve merely as a basis and representative basis for the claims to teach those skilled in the art to variously utilize the present application with substantially any suitable detailed structure.

[0054] This specification may use the phrases "in one embodiment," "in another embodiment," "in yet another embodiment," or "in other embodiments," which may all refer to one or more of the same or different embodiments according to the present application.

[0055] The embodiment of the present application provides a photoelectric detector, combined with Figure 1 、 Figure 2 and Figure 4 As shown, the photodetector includes at least two transparent photodetector arrays (TPDs). The at least two transparent photodetector arrays are stacked in parallel along the optical axis with a preset spacing f2 to form at least two layers of transparent photodetector arrays.

[0056] When the light signal of the light source penetrates each layer of the transparent photodetection array, each layer of the transparent photodetection array converts the light signal into a group of photogenerated voltage signals and generates a photogenerated voltage image (i.e., light spot) on the detection plane of each layer of the transparent photodetection array accordingly; each group of photogenerated voltage signals is different, and each photogenerated voltage image is different; the spatial coordinates of the light source are determined based on the different groups of photogenerated voltage signals.

[0057] The photodetector provided in the embodiment of the present application is configured to detect the light signal of the light source by stacking at least two transparent photodetection arrays in parallel at a preset spacing f2 along the optical axis, thereby forming at least two layers of transparent photodetection arrays. The method has low energy consumption, small size, and is easy to integrate. When the light signal of the light source penetrates each layer of transparent photodetection array, each layer of transparent photodetection array converts the light signal into a group of photogenerated voltage signals, and correspondingly, different photogenerated voltage images remain on the detection plane of each layer of transparent photodetection array. Each group of photogenerated voltage signals is different, and each photogenerated voltage image is different. Based on the different groups of photogenerated voltage signals, the pitch incident angle of the light source is restored by analyzing the differences between the different photogenerated voltage images. and distance d, thereby obtaining the spatial coordinates (x, y, z) of the light source.

[0058] like Figure 4 As shown, the detection plane of each layer of transparent photoelectric detection array is perpendicular to the optical axis, the sizes of the transparent photoelectric detection arrays are the same, and the optical axis passes through the geometric center of each transparent photoelectric detection array.

[0059] Figure 4 In the figure, R1 is the diameter of the photo-generated voltage image (spot) of the first layer of TPD.

[0060] R2 is the diameter of the photo-generated voltage image (light spot) of the second layer TPD.

[0061] f2 is the preset distance between the first layer TPD and the second layer TPD.

[0062] d is the distance from the first-layer TPD to the light source.

[0063] In some embodiments, combined Figure 1 and Figure 2 As shown, the transparent photodetector array (TPD) includes a transparent substrate 100 and a plurality of detection units 200 arranged in an array and disposed on the transparent substrate 100 .

[0064] Each detection unit 200 includes: a transparent electrode layer 201, a hole transport layer 202, an organic semiconductor photoactive layer 203, an electron transport layer 204, a buffer layer 205 and a top electrode layer 206 arranged in sequence along a first direction (from bottom to top).

[0065] The detection unit 200 of the embodiment of the present application can improve the metal electrode film formation by adding a buffer layer 205 on the electron transport layer 204.

[0066] Optionally, the detection plane of the transparent photodetection array is a surface of the transparent photodetection array facing the light source. Preferably, the detection plane can be the plane of the transparent substrate 100, which has a higher detection responsivity. Of course, the plane of the top electrode layer 206 can also be selected as the detection plane, which has a relatively lower detection responsivity.

[0067] In some embodiments, the transparent photodetector array (TPD) is made of a material with a low absorption coefficient.

[0068] In some embodiments, see Figure 2 The material of the transparent electrode layer 201 includes indium tin oxide (ITO), and the transparent electrode layer 201 serves as an anode.

[0069] The hole transport layer 202 comprises a solution containing PEDOT and PSS. The diluted solution containing PEDOT and PSS can be prepared with deionized water to have a solid content of about 0.7-0.8 wt %, that is, the mass of PEDOT and PSS accounts for 0.7-0.8 wt % of the total mass of the solution.

[0070] The materials for the organic semiconductor photoactive layer 203 include a solution containing PM6 and Y6. A PM6:Y6 solution with a weight ratio of 1:1.2 can be accurately weighed and dissolved in chloroform to a total concentration of 12 mg / mL. The mixed solution is stirred at 55°C in a glove box for 1 hour, followed by the addition of 0.5% chloronaphthalene (CN) as an additive and mixing thoroughly.

[0071] The material of the electron transport layer 204 includes: a solution containing zinc oxide (ZnO). ZnO nanoparticles are dispersed in n-butanol and a small amount of chloroform to prepare a mixed solution with a concentration of 5-15 mg / ml, which is filtered through a polytetrafluoroethylene membrane with a pore size of 0.45 μm and then used.

[0072] The material of the buffer layer 205 includes a solution containing PEIE. The diluted PEIE solution can be prepared using 2-methoxyethanol to have a solid content of about 0.1-0.2 wt %, that is, the mass of PEIE accounts for 0.1-0.2 wt % of the total mass of the solution.

[0073] Top electrode layer 206 is made of gold (Au) and silver (Ag). It serves as a cathode. Specifically, top electrode layer 206 includes a gold layer and a silver layer sequentially arranged along a first direction (from bottom to top), or alternatively, includes a silver layer and a gold layer sequentially arranged along a first direction (from bottom to top).

[0074] The embodiments of the present application take into account both high sensitivity and high transmittance by adopting ITO, PEDOT:PSS, PM6:Y6, ZnO, PEIE and Au / Ag composite electrode design; among them, PEIE is used as a buffer layer to effectively solve the problem of poor film formation of thin-layer metal electrodes.

[0075] In some embodiments, the thickness of the top electrode layer 206 is on the nanometer scale.

[0076] Optionally, the thickness of the top electrode layer 206 is not less than 5 nanometers and not more than 20 nanometers. Controlling the thickness of the top electrode layer 206 within the range of 5 to 20 nanometers can achieve transparency of the transparent photodetection array, allowing light to penetrate the transparent photodetection array and detect light sources.

[0077] In some embodiments, the preset spacing f2 is in millimeters.

[0078] Optionally, the preset distance f2 is within a range of not less than 50 mm and not more than 150 mm, that is, the preset distance f2 between two adjacent transparent photoelectric detection arrays is within a range of 50 to 150 mm to achieve detection of the light source.

[0079] The present embodiment provides a method for preparing a photodetector array, comprising: cleaning high-transmittance, low-resistance ITO transparent conductive glass after laser etching and improving surface wettability through oxygen plasma treatment; diluting a PEDOT:PSS stock solution with deionized water and sequentially preparing a hole transport layer, an organic semiconductor photoactive layer, and an electron transport layer by spin coating. Finally, the semi-transparent or transparent photodetector array is prepared by evaporating Au and Ag composite electrodes, wherein the structure of the bottom ITO transparent electrode is achieved by laser etching, and the structure of the top Au and Ag composite electrode is achieved by shadow mask patterning.

[0080] In some specific embodiments, the specific manufacturing process of the transparent photodetection array is as follows:

[0081] A transparent conductive glass with ITO stripes (with a stripe width of 1.27 mm and a stripe spacing of 2 mm) is provided; a transparent electrode layer 201 (anode) is manufactured by a laser etching process.

[0082] Then, the ITO transparent conductive glass after the transparent electrode layer 201 is ultrasonically cleaned with deionized water and isopropyl alcohol in sequence, purged with dry nitrogen (N2), and then treated in an oxygen plasma environment for 2 minutes. Specifically, a plasma cleaning machine is used, oxygen gas (flow rate is 10sccm) is introduced and 100W radio frequency power is applied. Oxygen plasma can chemically react or physically bombard the surface of the material, thereby changing its properties. Here, ITO is subjected to plasma treatment to improve its hydrophilicity.

[0083] Then, the glass was placed in air, and PEDOT:PSS was spin-coated on the surface of the ITO transparent conductive glass to prepare the hole transport layer 202 . The coating was performed at a rotation speed of 4000 r / min for 30 seconds, and the glass was annealed at 150° C. for 5 minutes.

[0084] Subsequently, the device was transferred into a glove box and a PM6:Y6 mixed solution was spin-coated on the PEDOT:PSS layer to prepare an organic semiconductor photoactive layer 203 . The organic semiconductor photoactive layer 203 was spin-coated at a speed of 4000 r / min for 30 seconds and annealed at 80° C. for 5 minutes.

[0085] Next, a layer of ZnO was coated on the organic semiconductor photoactive layer 203 at a speed of 4000 r / min to form the electron transport layer 204.

[0086] Then, PEIE was spin-coated at a rotation speed of 3000 r / min to form the buffer layer 205 (ie, the modified layer of the electron transport layer 204 ).

[0087] Finally, Au and Ag with a specified thickness and array pattern are vacuum-evaporated on the buffer layer 205 as the top electrode layer 206 (cathode) to complete the preparation of the semi-transparent or transparent photodetection array.

[0088] Based on the same inventive concept, combined Figure 3 and Figure 4 As shown, an embodiment of the present application provides a photoelectric detection system, comprising:

[0089] A transparent photodetector comprising at least two transparent photodetector arrays (TPDs), wherein the at least two transparent photodetector arrays (TPDs) are stacked in parallel with a preset spacing f2 along the optical axis to form at least two layers of transparent photodetector arrays (TPDs); when a light signal from a light source penetrates each layer of the transparent photodetector arrays (TPDs), each layer of the transparent photodetector arrays (TPDs) converts the light signal into a set of photogenerated voltage signals and generates a photogenerated voltage image (light spot) on the detection plane of each layer of the transparent photodetector arrays (TPDs); each set of photogenerated voltage signals is different, and each photogenerated voltage image is different;

[0090] a collection device, electrically connected to each of the transparent photodetector arrays, for collecting the photogenerated voltage signals of each layer of the transparent photodetector array (TPD) and outputting each group of collected photogenerated voltage signals, wherein each group of photogenerated voltage signals is different;

[0091] The electronic device is electrically connected to the acquisition device and is used to receive each set of photovoltaic voltage signals and determine the spatial coordinates (x, y, z) of the light source according to each set of different photovoltaic voltage signals.

[0092] In some embodiments, the photodetection system further comprises at least two flexible circuit boards; the transparent photodetection array (TPD) is connected to the flexible circuit boards in a one-to-one correspondence;

[0093] Combine Figure 1 、 Figure 2 and Figure 3 As shown, each row of the top electrode layer 206 and each column of the transparent electrode layer 201 of the transparent photodetector array (TPD) are connected to a flexible circuit board, and the flexible circuit board is connected to a collection device.

[0094] Optionally, the light source may be a laser, such as a 532 nm laser.

[0095] When the light from the light source passes through the parallel stacked transparent photodetector arrays (TPD), the position and size of the light spot on the detection plane of different transparent photodetector arrays (TPD) will vary due to the change of the position and angle of the light source. Taking two layers of transparent photodetector arrays (TPD) as an example, by calculating the image offset between the first layer of transparent photodetector array (TPD) and the second layer of transparent photodetector array (TPD), combined with the trigonometric relationship in geometric optics, the angle information of the light source can be determined. and distance (d), thereby determining the spatial coordinates (x, y, z).

[0096] Optionally, the transparent photodetector array (TPD) can be an 8×8 detection unit array, a 9×9 detection unit array, a 6×6 detection unit array, etc. The number of rows and columns of the transparent photodetector array (TPD) can be adjusted according to actual conditions, and this application does not limit it.

[0097] Optionally, the acquisition device may be a microcontroller, such as an Arduino MEGA2540 microcontroller. The electronic device may be a computer, a tablet computer, or the like.

[0098] For example, in combination Figure 3 and Figure 4 The photodetection system was established by establishing an optical axis on an optical platform. Two (or more) transparent photodetector arrays (TPDs) were stacked in parallel with a preset spacing f2 and fixed to the optical platform. The geometric centers of the multiple transparent photodetector arrays (TPDs) simultaneously passed through the optical axis, and the detection planes of the transparent photodetector arrays (TPDs) were perpendicular to the optical axis. The transparent photodetector arrays (TPDs) consisted of an 8×8 array of detection elements. A flexible printed circuit board with a spacing and length corresponding to the transparent photodetector arrays (TPDs) was used to connect the anode array (transparent electrode layer 201 in each column) and cathode array (top electrode layer 206 in each row). The first layer of transparent photodetector arrays (TPDs) was connected to the D2-D9 pins (8-pin anode array) and A0-A7 pins (8-pin cathode array) of the Arduino MEGA2540 microcontroller. The second layer of transparent photodetector arrays (TPDs) was connected to the D12-D19 pins (8-pin anode array) and A10-A17 pins (8-pin cathode array) of the Arduino MEGA2540 microcontroller. The USB port on the Arduino MEGA2540 microcontroller is connected to a PC (personal computer) and data is transferred using a serial communication protocol.

[0099] The photovoltage signals from each layer of the transparent photodetector array (TPD) are collected using an Arduino MEGA2540 microcontroller and then processed and reconstructed using a Python algorithm. A centroid positioning and edge detection algorithm, combined with trigonometric formulas, is used to calculate the angle and position of the light source. Image processing uses a two-dimensional Gaussian function fit to optimize the accuracy of light spot position and size extraction. Ultimately, the angle information of the light source is obtained. and distance (d), thereby determining the spatial coordinates (x, y, z).

[0100] For example, an Arduino MEGA2540 microcontroller can be programmed using the Arduino IDE to scan the rows and columns of the first-layer transparent photodetector array (TPD) using a time-series nested loop. Pins D2-D9 are set to digitalWrite mode, and pins A0-A7 are set to analogRead mode. When the corresponding pins D2-D9 are all high, the voltage value of the photovoltage signal of the corresponding detection unit of the transparent photodetector array (TPD) is read (range 0-5V, accuracy 4.88mV). The baud rate of serial communication between the Arduino microcontroller and a PC (personal computer) is set to 9600. After the voltage value of the photovoltage signal is synchronized to the PC (personal computer), Python programming (relying on numpy, Python GUI, pyserial, and matplotlib environments) is used to store the photovoltage data of multiple 8×8 TPD arrays, and the read data is updated in real time through heat map rendering. The PC (personal computer) obtains the voltage value of the 8×8 photo-generated voltage signal of multiple transparent photodetector arrays (TPDs), and uses the centroid positioning and edge detection algorithm to complete the angle and position calculation of the light source based on known variables (such as the photosensitivity size of the transparent photodetector array (TPD), the preset spacing f2 between multiple transparent photodetector arrays (TPDs)) and the triangular relationship in the geometric space. The image processing can use two-dimensional Gaussian function fitting to optimize the accuracy of light spot position and size extraction. Finally, the angle information of the light source is obtained. and spatial coordinates (x,y,z), see Figure 5 and Figure 6 The normalized photovoltaic voltage images of the light source at different incident angles and the normalized photovoltaic voltage images at different incident distances are shown respectively.

[0101] Existing 3D light detection technologies require the simultaneous operation of multiple devices, often requiring high energy consumption and computational complexity. However, this application utilizes a series of passive transparent photodetector arrays (TPDs) in conjunction with a general-purpose embedded microprocessor, reducing the system's power requirements and energy consumption.

[0102] Existing 3D light detection technologies require the manufacture of high-performance optical and electrical components, and metasurface materials themselves are relatively expensive. However, this application utilizes a series of low-cost semiconductor materials and fabrication processes (such as solution spin coating and laser processing), resulting in simple and low-cost processes. Furthermore, the data processing hardware is handled by a low-cost embedded microcontroller, further reducing costs.

[0103] Limited by the volume of photoelectric detection devices and the need for distributed detection, the integration of existing technologies cannot be balanced with detection accuracy. In addition, in terms of signal processing speed and data complexity, existing methods perform poorly in real-time detection. However, the present application is designed to capture the angle and position information of the light source at different focal planes at the same time through the parallel stacking of at least two transparent photodetection arrays (TPDs). Based on the zero-bias operation characteristics of the transparent photodetection array, the system can be directly integrated into a low-power, low-computing-power embedded environment without the need for additional driving circuits. The double-sided light response characteristics of the transparent photodetection array enable the system to have omnidirectional light detection capabilities, greatly improving the angle recognition accuracy. Moreover, the system can expand its spatial resolution by increasing the number and density of transparent photodetection arrays, and further improve the computing accuracy and functionality by combining neural network algorithms.

[0104] Based on the same inventive concept, an embodiment of the present application provides a photoelectric detection method, which is applied to the photoelectric detection system provided in any of the above embodiments, such as Figure 7 As shown, the photoelectric detection method includes:

[0105] S10, obtaining at least two groups of photogenerated voltage signals corresponding to at least two layers of transparent photodetection arrays, wherein each group of photogenerated voltage signals is different;

[0106] Exemplarily, the electronic device acquires at least two sets of photo-generated voltage signals corresponding to at least two layers of transparent photodetection arrays through a collection device, which may be an Arduino MEGA2540 microcontroller.

[0107] S20, determining the center coordinates and diameter of the photo-generated voltage image of the detection plane of each layer of the transparent photodetection array according to each group of photo-generated voltage signals;

[0108] For example, see Figure 4 The center coordinates of the photovoltage image (i.e., light spot) of the first transparent photodetector array (TPD) are (x0, y0, z0); the center coordinates of the photovoltage image (i.e., light spot) of the second transparent photodetector array (TPD) are (x1, y1, z1). The center coordinates and diameter of each photovoltage image (light spot) can be determined using a two-dimensional Gaussian fitting algorithm.

[0109] S30, determining the pitch incident angle and the heading incident angle of the light source according to the center coordinates of the photo-generated voltage image of the detection plane of each layer of the transparent photoelectric detection array;

[0110] For example, the center displacement difference of the photovoltaic image (light spot) in the first layer TPD and the second layer TPD can be used to calculate the pitch incident angle of the light source. and the heading angle of incidence θ.

[0111] S40, determining the distance from the first layer of transparent photodetection arrays to the light source based on the diameter of the photovoltage image on the detection plane of each layer of transparent photodetection arrays, the preset spacing between the transparent photodetection arrays, and the relationship between at least two triangles formed by the maximum light, the optical axis, and the at least two layers of transparent photodetection arrays;

[0112] Among them, see Figure 4 As shown, the distance d between the first transparent photoelectric detection array and the light source is smaller than the distance between other transparent photoelectric arrays and the light source. The triangle is formed by the distance from the light source to the transparent photoelectric detection array (TPD), the maximum light of the light source and the detection plane of the transparent photoelectric detection array (TPD);

[0113] For example, Figure 4 In the figure, the distance (d) from the light source along the optical axis to the first layer TPD is the first side length, the maximum light is the second side length, the distance from the maximum light to the geometric center of the first layer TPD is the third side length, and the angle between the first side length and the second side length is The first side length, the second side length, and the third side length form a first triangle.

[0114] The distance (d+f2) from the light source to the second layer TPD along the optical axis is the fourth side length, the maximum light is the fifth side length, the distance from the maximum light to the geometric center of the second layer TPD is the sixth side length, and the angle between the fourth side length and the fifth side length is The fourth side length, the fifth side length, and the sixth side length form a second triangle.

[0115] The first triangle and the second triangle are similar triangles.

[0116] S50 , determining the spatial coordinates of the light source according to the distance from the first-layer transparent photoelectric detection array to the light source, the pitch incident angle, and the heading incident angle.

[0117] Among them, see Figure 4 , pitch angle of incidence 1 / 2 is the angle between the maximum light and the z-axis (optical axis). The heading incident angle θ is the angle between the line connecting the center coordinates of the two layers of transparent photoelectric detection array and the x-axis or y-axis. The x-axis and y-axis are located in the detection plane of the transparent photoelectric detection array, and the z-axis is the optical axis. The x-axis, y-axis and z-axis are perpendicular to each other. According to the distance d from the first layer of transparent photoelectric detection array to the light source, the pitch incident angle and the heading incident angle θ, determine the spatial coordinates (x, y, z) of the light source.

[0118] In some embodiments, determining the pitch incident angle and the heading incident angle of the light source according to the center coordinates of the photovoltaic voltage image of the detection plane of each layer of the transparent photodetection array includes:

[0119] Use Formula 1 to determine the heading angle of incidence;

[0120]

[0121] Use Formula 2 to determine the pitch angle of incidence;

[0122]

[0123] Where θ is the heading angle of incidence, is the pitch incident angle, (x0, y0, z0) is the center coordinate of the photovoltage image (light spot) of the first layer transparent photodetector array (TPD), and (x1, y1, z1) is the center coordinate of the photovoltage image (light spot) of the second layer transparent photodetector array (TPD); the first layer transparent photodetector array and the second layer transparent photodetector array are adjacent transparent photodetector arrays.

[0124] In some embodiments, the distance between the first layer of transparent photodetection array and the light source is proportional to the preset spacing between two adjacent layers of transparent photodetection arrays;

[0125] The distance between the first transparent photoelectric detection array and the light source is proportional to the diameter of the photo-generated voltage image of the first transparent photoelectric detection array;

[0126] The distance between the first transparent photodetection array and the light source is inversely proportional to the first difference, which is the diameter of the photovoltage image of the second transparent photodetection array minus the diameter of the photovoltage image of the first transparent photodetection array.

[0127] The simplified formula for the distance d from the first transparent photoelectric detection array to the light source is as follows:

[0128]

[0129] Wherein, f2 is the preset spacing between two adjacent layers of transparent photodetector arrays (TPD);

[0130] R1 is the diameter of the photovoltage image (spot) of the first layer transparent photodetector array (TPD);

[0131] R2 is the diameter of the photo-generated voltage image (light spot) of the second layer transparent photodetector array (TPD).

[0132] In some embodiments, see Figure 8 As shown, according to each set of photo-generated voltage signals, the center coordinates and diameter of the photo-generated voltage image of the detection plane of each layer of the transparent photodetection array are determined respectively, including:

[0133] S101, obtaining initial parameters of a two-dimensional Gaussian model according to each set of photogenerated voltage signals; the initial parameters include an initial peak value, an initial center coordinate, an initial first standard deviation, an initial second standard deviation, and an initial background value;

[0134] The electronic device acquires a photo-generated voltage signal from a transparent photodetector array (TPD) through a collection device. For example, the transparent photodetector array (TPD) is an 8×8 array of detection units, and the electronic device acquires the photo-generated voltage data from the 8×8 array of detection units through the collection device.

[0135] First, each set of photogenerated voltage signals is normalized into a grayscale matrix (eg, 0-1 or 0-255).

[0136] Then, the grayscale matrix is preprocessed; the preprocessing may include denoising, background subtraction, etc. Optionally, the preprocessing of the grayscale matrix includes: performing median filtering or Gaussian smoothing on the grayscale matrix to filter out pixel noise of the transparent photodetector array (TPD); if there is a baseline offset (such as C≠0), subtracting the background value to achieve background subtraction.

[0137] Then, the initial parameters of the two-dimensional Gaussian model are obtained; the initial parameters include an initial peak value A, an initial center coordinate (x0, y0), an initial first standard deviation, an initial second standard deviation, and an initial background value.

[0138] The initial peak value A is: the maximum grayscale value of the photo-generated voltage image (light spot) on the detection plane of the transparent photodetector array (TPD) is taken as the initial peak value A.

[0139] Initial center coordinates (x0, y0): The initial center coordinates (x0, y0) are roughly located using the centroid method.

[0140] Initial first standard deviation σ x and the initial second standard deviation σ y : Assume an initial value based on the size of the photovoltage image (spot), for example, 1 / 2 of the pixel (detection unit) width is the initial first standard deviation σ x and the initial second standard deviation σ y .

[0141] Initial background value C: The average grayscale value of the edge area of the photovoltaic image (light spot) is taken as the initial background value C.

[0142] S102, constructing a two-dimensional Gaussian model based on the initial parameters, and calculating the function value of the two-dimensional Gaussian model;

[0143] Continuing with the above example, according to the initial peak A, the initial center coordinates (x0, y0), and the initial first standard deviation σ x , initial second standard deviation σ yAnd the initial background value C, construct a two-dimensional Gaussian model, and calculate the function value of the two-dimensional Gaussian model. The model formula of the two-dimensional Gaussian model is as follows: Formula 4:

[0144]

[0145] Where A is the initial peak, (x0, y0) is the initial center coordinate, σ x is the initial first standard deviation, σ y is the initial second standard deviation σ y , C is the initial background value.

[0146] S103, using a nonlinear least squares fitting algorithm to fit the actual function value to the function of the two-dimensional Gaussian model, and continuously adjusting the initial parameters of the two-dimensional Gaussian model;

[0147] Nonlinear least squares is an optimization technique used to fit nonlinear models. Its core goal is to minimize the sum of squared residuals between observed data and model predictions.

[0148] S104, if the change in the initial parameters meets the preset conditions, outputting the fitting results; the fitting results include the actual peak value A, the actual center coordinates, the actual first standard deviation σx, the actual second standard deviation, and the actual background value; wherein the actual center coordinates are the center coordinates of the photo-generated voltage image of the detection plane of the transparent photodetection array;

[0149] For example, if the initial parameter change is less than a threshold or the maximum number of iterations is reached, the fitting is terminated and the fitting result is output. The fitting result includes the actual peak value, the actual center coordinate, the actual first standard deviation, the actual second standard deviation, and the actual background value; the actual center coordinate is the center coordinate of the photovoltage image of the detection plane of the transparent photodetection array, which is used for the subsequent pitch incident angle of the light source. and calculation of the heading angle of incidence θ.

[0150] S105 , determining the diameter of the photo-generated voltage image on the detection plane of the transparent photodetection array using the actual first standard deviation and the actual second standard deviation.

[0151] In some embodiments, according to the above fitting results, the actual first standard deviation σ can be obtained. x and the actual second standard deviation σ y , the actual first standard deviation σ x and the actual second standard deviation σ y Reflects the broadening of the photovoltaic image (light spot) in the x and y directions.

[0152] Then, using the actual first standard deviation σ x Calculate the full width at half maximum (FWHM) according to the following formula 5 x ;

[0153]

[0154] Where σ in Formula 5 x is the actual first standard deviation σ x .

[0155] Then, using the full width at half maximum (FWHM), the diameter R of the photovoltage image (spot) is calculated according to the following formula 6: x ;

[0156]

[0157] Where σ in Formula 6 x is the actual first standard deviation σ x .

[0158] If the photovoltaic image (light spot) is close to a circle, the diameter R of the photovoltaic image (light spot) is calculated according to the following formula 7:

[0159]

[0160] Among them, σ in Formula 7 x is the actual first standard deviation, σ y is the actual second standard deviation σ y .

[0161] In other embodiments, the actual first standard deviation σ can be obtained based on the above fitting results. x and the actual second standard deviation σ y ,The diameter R of the photovoltage image (spot) is calculated by edge detection, intensity threshold segmentation, and contour extraction.

[0162] The above embodiments are merely exemplary embodiments of the present application and are not intended to limit the scope of the present application. The scope of protection of the present application is defined by the claims. Those skilled in the art may make various modifications or equivalent substitutions to the present application within the essence and scope of protection of the present application, and such modifications or equivalent substitutions shall also be deemed to fall within the scope of protection of the present application.

Claims

1. A photoelectric detector, characterized in that: include: at least two transparent photodetector arrays; At least two transparent photoelectric detection arrays are stacked in parallel with each other at a preset interval along the optical axis to form at least two layers of transparent photoelectric detection arrays; When the light signal of the light source penetrates each layer of the transparent photodetection array, each layer of the transparent photodetection array converts the light signal into a group of photogenerated voltage signals and generates a photogenerated voltage image on the detection plane of each layer of the transparent photodetection array accordingly; each group of photogenerated voltage signals is different, and each photogenerated voltage image is different; the spatial coordinates of the light source are determined based on the different groups of photogenerated voltage signals.

2. The photodetector according to claim 1, wherein The transparent photoelectric detection array includes a plurality of detection units arranged in an array; Each of the detection units comprises: a transparent electrode layer, a hole transport layer, an organic semiconductor photoactive layer, an electron transport layer, a buffer layer and a top electrode layer arranged in sequence along a first direction.

3. The photodetector according to claim 2, wherein: The thickness of the top electrode layer is nanometer scale.

4. The photodetector according to claim 1, wherein The preset spacing is in millimeter order.

5. A photoelectric detection system, characterized in that: include: A transparent photodetector comprising at least two transparent photodetection arrays, wherein the at least two transparent photodetection arrays are stacked in parallel with a preset spacing along the optical axis to form at least two layers of transparent photodetection arrays; When the light signal from the light source penetrates each layer of the transparent photodetection array, each layer of the transparent photodetection array converts the light signal into a set of photogenerated voltage signals, and accordingly generates a photogenerated voltage image on the detection plane of each layer of the transparent photodetection array; each set of photogenerated voltage signals is different, and each photogenerated voltage image is different; a collection device, electrically connected to each of the transparent photodetection arrays, for collecting the photogenerated voltage signals of each layer of the transparent photodetection array and outputting each group of collected photogenerated voltage signals, wherein each group of photogenerated voltage signals is different; The electronic device is electrically connected to the acquisition device and is used to receive each set of photovoltaic voltage signals and determine the spatial coordinates of the light source according to each set of different photovoltaic voltage signals.

6. The photoelectric detection system according to claim 5, characterized in that: It also includes at least two flexible circuit boards; the transparent photodetection array is connected to the flexible circuit boards in a one-to-one correspondence; Each row of top electrode layers and each column of transparent electrode layers of the transparent photodetection array are connected to the flexible circuit board, and the flexible circuit board is connected to the collection device.

7. A photoelectric detection method, characterized in that: include: Obtaining at least two groups of photogenerated voltage signals corresponding to at least two layers of transparent photodetection arrays, wherein each group of photogenerated voltage signals is different; Determining the center coordinates and diameter of the photo-generated voltage image of the detection plane of each layer of the transparent photodetection array according to each group of photo-generated voltage signals; Determining the pitch incident angle and the heading incident angle of the light source according to the center coordinates of the photo-generated voltage image of the detection plane of each layer of the transparent photoelectric detection array; Determine the distance from the first layer of transparent photodetection arrays to the light source based on the diameter of the photovoltage image on the detection plane of each layer of transparent photodetection arrays, the preset spacing between the transparent photodetection arrays, and the relationship between at least two triangles formed by the maximum light, the optical axis, and at least two layers of transparent photodetection arrays; The spatial coordinates of the light source are determined according to the distance from the first-layer transparent photoelectric detection array to the light source, the pitch incident angle, and the heading incident angle.

8. The photoelectric detection method according to claim 7, characterized in that: The method of determining the pitch incident angle and the heading incident angle of the light source according to the center coordinates of the photo-generated voltage image of the detection plane of each layer of the transparent photoelectric detection array comprises: Use Formula 1 to determine the heading angle of incidence; Use Formula 2 to determine the pitch angle of incidence; Where θ is the heading angle of incidence, is the pitch incident angle, (x0, y0, z0) is the center coordinate of the photovoltage image of the first layer transparent photodetection array, and (x1, y1, z1) is the center coordinate of the photovoltage image of the second layer transparent photodetection array.

9. The photoelectric detection method according to claim 7, characterized in that: The distance between the first layer of transparent photoelectric detection array and the light source is proportional to the preset spacing between two adjacent layers of transparent photoelectric detection arrays; The distance between the first transparent photoelectric detection array and the light source is proportional to the diameter of the photo-generated voltage image of the first transparent photoelectric detection array; The distance between the first transparent photodetection array and the light source is inversely proportional to the first difference, which is the diameter of the photovoltage image of the second transparent photodetection array minus the diameter of the photovoltage image of the first transparent photodetection array.

10. The photoelectric detection method according to claim 7, characterized in that: According to each set of photo-generated voltage signals, the center coordinates and diameter of the photo-generated voltage image of the detection plane of each layer of the transparent photodetection array are determined respectively, including: Obtaining initial parameters of a two-dimensional Gaussian model according to each set of photogenerated voltage signals; the initial parameters include an initial peak value, an initial center coordinate, an initial first standard deviation, an initial second standard deviation, and an initial background value; Constructing a two-dimensional Gaussian model according to the initial parameters, and calculating a function value of the two-dimensional Gaussian model; The actual function value is fitted to the function of the two-dimensional Gaussian model using a nonlinear least squares fitting algorithm, and the initial parameters of the two-dimensional Gaussian model are continuously adjusted; If the change in the initial parameters meets the preset conditions, the fitting results are output; the fitting results include the actual peak value, the actual center coordinates, the actual first standard deviation, the actual second standard deviation and the actual background value; wherein the actual center coordinates are the center coordinates of the photovoltage image of the detection plane of the transparent photodetection array; The diameter of the photo-generated voltage image of the detection plane of the transparent photodetection array is determined using the actual first standard deviation and the actual second standard deviation.

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