Apparatus and method for processing substrate

Abstract

The invention relates to a device and a method for processing a plurality of substrates (32), in which the substrates (32) are arranged on a support point (7) of a susceptor (5) in a housing cavity of a reactor housing (1), wherein a process gas flow (S1) of a process gas is fed into the housing cavity from one or more gas outlets (6 ') of the gas inlet component (6) in such a way that the process gas flows uniformly through the bearing point (7) as far as a gas outlet component (9) arranged downstream of the bearing point (7) with respect to the process gas flow, through which gas outlet component the process gas is led out of the housing cavity, wherein a locally defined control gas flow (S2) of the control gas is fed into the housing cavity via at least one control gas inlet (10) leading into the housing cavity. In order to compensate for the local influence of the control gas flow (S2) on the fluid profile, a compensation inlet or outlet (23) through which a compensation gas flow (S3) flows is provided downstream of the control gas inlet (10) and downstream of the support point (7).

Description

Technical Field

[0001] The present invention relates to a method for processing a plurality of substrates arranged on supporting positions of susceptors, which are arranged in a housing cavity of a reactor housing. A process gas flow of a process gas is supplied into the housing cavity from a gas outlet of a gas inlet component. This is achieved in such a way that the process gas flows substantially uniformly through the supporting positions up to an exhaust component arranged downstream of the supporting positions with respect to the process gas flow. The process gas is guided out of the housing cavity by the exhaust component. At least one control gas inlet opens into the housing cavity, via which a locally defined control gas flow of the control gas is supplied into the housing cavity.

[0002] The invention further relates to a device for carrying out the method, comprising a base arranged in a housing cavity of a reactor housing.

[0003] The present invention also relates to a method for processing a plurality of substrates arranged on a susceptor, wherein the susceptor is arranged in a housing cavity of a reactor housing and is driven to rotate about a rotation axis. Supporting positions are arranged on the susceptor in a uniform circumferential distribution around the rotation axis, with at least one substrate being arranged on each supporting position. Process gas is supplied to the housing cavity via a gas inlet component arranged in the center of the housing cavity, so that the process gas flows past the supporting positions of the susceptor toward the edge of the susceptor. The process gas is guided out of the housing cavity via an exhaust component surrounding the susceptor. The process gas flowing past the side of the susceptor with the supporting positions forms a transverse flow profile. Compensating gas is locally supplied to or pumped out of the housing cavity via a compensating gas inlet or outlet.

[0004] The invention further relates to a device for carrying out the method, comprising a base arranged in a housing cavity of a reactor housing. Background Art

[0005] DE 10 201 9104433 A1 describes an apparatus and method for depositing layers on a substrate of a general type. A susceptor, arranged below a process chamber, is temperature-controlled from below by a temperature control device. The temperature control device is a radio frequency coil having a cavity through which a coolant flows. A control gas flow can be supplied between the temperature control device and the side of the susceptor facing away from the process chamber. The control gas flow forms a temperature control gas flow, which can be used to regulate the heat flow from the susceptor to the cooled RF coil in order to locally influence the temperature at the substrate support point.

[0006] DE 10 201 8 124 957 A1 describes an apparatus and method for depositing a layer on a substrate. The support position is formed by a substrate holder supported on an air cushion generated by a control gas. The height of the air cushion can be influenced by varying the control gas flow rate. A compensating gas is supplied upstream of the substrate holder, and the sum of the compensating gas flow rate and the control gas flow rate is kept constant.

[0007] US Pat. No. 6,531,069 B1 describes a CVD reactor having a gas inlet component in the form of a showerhead extending over the entire side surface of the process chamber. A susceptor arranged below the showerhead is surrounded by the gas inlet component, which has gas outlets only along a portion of its circumference. The gas outlets are assigned to a rotating gas outlet ring.

[0008] US Pat. No. 8,152,925 B2 describes a CVD reactor having a gas inlet component designed as a showerhead and a support surface for a substrate arranged underneath. The substrate is surrounded by a gas outlet ring having a plurality of gas outlet openings. The gas outlet ring also has a plurality of gas outlets through which a make-up gas can be supplied into the housing cavity of the CVD reactor.

[0009] DE 10 2020 107517 A1 describes a device for heat treating substrates in a susceptor that is driven to rotate about an axis of rotation, wherein a gas supply line is arranged in the susceptor and extends out of the susceptor on the bottom side facing the heating device. Each substrate is locally assigned an outlet arranged on the bottom side.

[0010] In the method described at the outset, the process gas flow rate can vary significantly depending on the type of process being performed in the process chamber. For example, when depositing III-V semiconductor layers, particularly when depositing layers containing indium and / or phosphorus or layers containing gallium and / or arsenic, it may be necessary to use very low process gas flow rates, so that the process gas flows at a relatively low flow rate over the side of the susceptor facing the process chamber. In such a method, if a temperature-controlled gas flow is additionally flowing along the opposite side of the susceptor and this temperature-controlled gas flow flows into the process gas flow, the flow profile, i.e., the local flow direction of the process gas or its pressure at the edge of the susceptor, can be influenced, so that this influence on the process parameters affects the quality or thickness of the deposited layer.

[0011] However, the flow profile of the process gas through the process chamber is also affected by other circumstances, for example due to an imprecise central arrangement of the gas inlet member or due to a slight tilt of the susceptor driven in rotation about the rotation axis, or due to an uneven suction effect of the exhaust member connected to the vacuum pump in order to set a negative pressure in the housing cavity of the CVD reactor. Summary of the Invention

[0012] The object of the present invention is to provide a device with which the flow profile can be influenced at least in the edge region of the base.

[0013] This object is achieved by the invention specified in the claims, the dependent claims representing not only advantageous developments of the invention specified in the independent claim but also independent solutions to this object.

[0014] First and foremost, it is proposed to arrange a compensating gas inlet or outlet downstream of the susceptor so that a locally defined compensating gas flow can be supplied into or pumped out of the housing cavity through this opening. This compensating gas flow allows an additional gas flow to be supplied into or pumped out of the housing cavity, which influences the flow profile of the process gas flow above the susceptor, at least at its edges. The compensating gas flow can locally influence the local total pressure within the housing cavity, which is partially responsible for shaping the flow profile. The compensating gas flow can also introduce additional pulses into the gas flow, which have a locally defined, dynamic effect on the flow profile. This compensating gas flow can be used to compensate for the locally defined effects of a control gas flow, for example, at a specific location, so that, for example, the sum of the locally defined control gas flow and the compensating gas flow locally allocated to it remains constant. However, the compensating gas flow can also be used to reduce inhomogeneities in the flow profile due to other factors by supplying the compensating gas flow in a locally defined manner.

[0015] The control gas flow can be a mixture of multiple gases, particularly a mixture of two gases. The gases can have different thermal conductivity viscosities. For example, the two gases can be hydrogen and nitrogen. Each of the multiple gases can be supplied to the gas supply line in a controlled manner using an assigned mass flow controller, so that a compensating gas with a defined thermal conductivity viscosity can be applied at the site of action. It is particularly advantageous if the control gas flow can also be composed of gases with different viscosities and thermal conductivities, such as a mixture of hydrogen and nitrogen. The compensating gas flow can also be specifically directional, such that the direction can be toward the exhaust component, toward the process chamber or the top of the process chamber, or along the circumference of the susceptor. The compensating gas inlet or outlet can also be fixedly arranged on the housing. It can also be provided that the compensating gas inlet or outlet is assigned to the susceptor. For a rotating susceptor, the compensating gas inlet or outlet also rotates with it, maintaining a fixed position assigned to one of the substrates. It can also be provided that each substrate is assigned a compensating gas inlet or outlet. The compensating gas inlet or outlet can be assigned to the upward-facing top of the susceptor. However, the openings can also be arranged radially on the narrow, outward-facing edge of the base. They can also be arranged on the underside. The compensating gas inlet or outlet is preferably adjacent to the edge of the base. Here, it can also be provided that the openings impart a direction to the compensating gas flow.

[0016] In a first variation of the present invention, a method is proposed in which multiple substrates are positioned on a support position on a susceptor arranged in a housing cavity of a reactor housing. The substrates can be positioned on one of the support positions. However, multiple substrates can also be positioned on one of the support positions. The support position can be formed by a substrate holder supported by an air cushion that drives the substrate holder in rotation. The susceptor has an upstream region in which a gas inlet member is arranged. The gas inlet member has one or more gas outlets through which process gas is supplied to a process chamber extending above the susceptor. The susceptor has a downstream region adjacent to an exhaust member through which process gas or reaction products formed during substrate processing are directed out of the housing cavity. This can be accomplished using a vacuum pump connected to the exhaust member via a suction line. The gas outlets are arranged so as to achieve the most uniform process gas flow possible over the substrates positioned between the gas inlet and exhaust members in the direction of process gas flow. The rotationally symmetrical arrangement around the central gas inlet member should, if possible, create a rotationally symmetrical flow profile. A control gas may be supplied to the housing cavity. This is accomplished via a control gas inlet leading into the housing cavity. A single control gas inlet can be provided. However, multiple control gas inlets can also be provided. According to a preferred embodiment of the present invention, one or more control gas inlets are arranged along the edge of the susceptor. The control gas can be used to influence the heat flow from the temperature control device to the susceptor, or vice versa. This can be achieved in particular by having the control gas flow between the temperature control device and the susceptor. This is preferably locally confined. The control gas can be a mixture of gases with high and low thermal conductivity, so that the heat flow between the temperature control device and the susceptor can be influenced by the composition of the control gas. The temperature control device can be an RF heater that generates vortexes within the susceptor to heat the susceptor. The RF heater can be formed by a tube extending spirally beneath the susceptor, through which a coolant flows, so that the temperature control device also performs a cooling function, thereby allowing the heat flow from the susceptor to the tube to be influenced by the temperature control gas. The mass flow rate of the temperature control gas can also be varied. The temperature control gas enters the housing cavity through the control gas inlet, particularly in the edge region of the susceptor, where it can mix with the process gas flow. According to the invention, local influences on the flow profile caused by feeding a control gas into the process gas flow are compensated by the compensation gas flow.

[0017] It may be advantageous if the susceptor is driven to rotate about its axis of rotation. The susceptor may have multiple bearing locations, evenly distributed circumferentially on a circular arc around its center. At least one control gas inlet may be fixedly arranged so that the control gas flow is supplied to the housing cavity at a fixed point relative to the reactor housing. The control gas may have previously passed through a gap between the temperature control device and the susceptor, acting as a temperature control gas. To thermally influence only certain bearing locations, the temperature control gas may be flowed into the housing cavity through the control gas inlet in synchronization with the rotational movement of the susceptor. According to the present invention, the control gas inlet is locally provided with a compensating gas outlet, which is located at a fixed position on the reactor housing and through which the compensating gas flow is supplied. Provision may be made for additional compensating gas outlets, each also located at a fixed position relative to the reactor housing, through which the compensating gas flow is supplied to the housing cavity. Provision may be made for multiple compensating gas outlets to be uniformly distributed circumferentially around the center of the susceptor, with the bearing locations also located in the center of the susceptor. An increase in the control gas flow rate can be compensated by reducing the flow rate of one of the compensation gases. However, in a variant, it can also be provided that the compensation gas flow is directed out of the housing cavity via a compensation gas outlet. For this purpose, the compensation gas outlet can be connected to a vacuum line, through which the gas can be pumped out of the housing cavity. This can also be done synchronously with the rotation of the susceptor.

[0018] According to a preferred refinement of the present invention, the compensation gas inlet or outlet opens into an exhaust component, allowing a locally defined compensation gas flow to be supplied into the exhaust component or to be pumped out of the exhaust component. The location for mixing the process gas and the control gas may also be located in the exhaust component. The control gas inlet may also open directly into the exhaust component. However, it is also provided that the control gas inlet opens into the housing cavity upstream of the exhaust component. It may also be provided that the process gas contains a reaction gas containing a Group III element and a reaction gas containing a Group V element. However, the process gas may also contain a reaction gas containing a Group II or VI element, or a Group IV element. The two gases, which may be formed from an organometallic compound and a hydride, are supplied together with an inert gas (e.g., hydrogen) through a gas inlet component, preferably arranged in the center of the process chamber. The process gas then flows through a process chamber, which is delimited at its bottom by a susceptor and at its top by a ceiling, where it undergoes thermal decomposition. The decomposition products form a Group III-V semiconductor layer on the substrate. In other embodiments, the decomposition products form a Group II-VI semiconductor layer or a Group IV semiconductor layer. It is preferably a single-crystalline semiconductor layer. Preferably, multiple semiconductor layers, preferably with different compositions and layer thicknesses, are deposited one above the other. These can be layers of GaAs, InP, GaP, InAs, or mixtures of these crystals. In some of these material systems, particularly those containing As and P, the optimal flow rate of the process gas through the process chamber is so low that the flow profile is already affected by the minimum control flow or other design inhomogeneities in the process chamber. Such inhomogeneities can be reduced by specifically supplying compensation gases.

[0019] In a second variant of the invention, if no control gas flow is supplied to the housing cavity in this variant, the compensating gas is therefore only used to locally influence the flow profile. Here, the supply of the compensating gas flow is also preferably synchronized with the rotation of the base. The compensating gas can be introduced into the housing cavity or led out of the housing cavity to generate local overpressure or local negative pressure. Here, it is also advantageous if the compensating gas inlet or outlet is located in the exhaust component so that the pressure in the exhaust component changes locally due to changes in the mass flow of the compensating gas. The compensating gas inlet or outlet can also be arranged in the exhaust component in such a way that the compensating gas flowing through it has no dynamic effect outside the exhaust component, but only causes local pressure changes in the area of the effective part located radially outside the base.

[0020] It can also be provided that the equalizing gas inlet or outlet is arranged in the direction of flow upstream of the exhaust component, but downstream of the base in the direction of flow.

[0021] It can also be provided that the exhaust component is an annular body having a plurality of openings arranged in an annular manner around the center on its top side. The openings can have a constant distance. The openings can be connected to a channel extending over the entire circumference of the exhaust component, which is connected to a gas line at at least one but preferably multiple points, through which gas can be pumped out of the exhaust component. However, it can also be provided that the exhaust component has only a single annular opening, through which process gas and possibly control gas can enter the exhaust component. The compensating gas inlet or outlet can be arranged in the bottom area of the channel or in the area of the wall of the channel. Only a single compensating gas inlet or outlet can be provided. However, it is also possible to provide multiple, for example two relative, compensating gas inlets or outlets. However, it can also be provided that the number of compensating gas inlets or outlets corresponds to the number of support positions, and their circumferential distribution also corresponds to the circumferential distribution of the support positions on the base.

[0022] It can be provided that the compensation gas inlet or outlet is arranged, or that a plurality of compensation gas inlets or outlets are arranged, in such a manner that the change in the flow profile downstream of the support point or at the support point of the substrate, i.e., in particular, the change in the flow profile above the substrate surface, is limited to certain areas of the substrate surface. For example, it can be provided that one or more compensation gas inlets or outlets are arranged or operated in such a manner that the flow profile is affected only above the edge area or only above the center area of the substrate. However, it is also possible to arrange one or more compensation gas inlets or outlets in such a manner that the flow profile over the entire surface of the substrate is affected. This can be achieved by slightly reducing the total pressure downstream of the support point by means of the gas flow or by the fluid dynamic effects of the gas flow, or by slightly increasing the total pressure downstream of the support point.

[0023] Based on a first radial line extending through the center of the gas inlet member and the edge of the support location or a substrate carried by the support location, the compensation gas inlet or outlet can be arranged such that the hydrodynamic effect of the compensation gas flow through them is limited to the edge region.

[0024] With respect to a second radial line extending through the centre of the gas inlet member and the centre of the support location or of a substrate carried by the support location, the compensation gas inlet or outlet may also be arranged such that the hydrodynamic effect of the compensation gas flow passing therethrough is restricted to a central region.

[0025] The present invention also includes such an improvement to the prior art, in which multiple compensation gas inlets or outlets are arranged in azimuthal sections corresponding to the azimuthal sections of the substrate. For example, the effect of a compensation gas inlet or outlet can be limited to a first radial line downstream of the susceptor, and the effect of a second compensation gas inlet or outlet can be limited to a second radial line downstream of the susceptor. The compensation gas inlet or outlet can be arranged in a fixed manner relative to the exhaust component or housing, so that the support position for the substrate moves relative to the compensation gas inlet or outlet. The outlet gas flow is then synchronized with the rotation of the susceptor, so that a specific pulse of gas flow is only generated, which is supplied to or sucked out of the process chamber, when a specific support position passes through the compensation gas inlet or outlet. This means that different gas pulses can act specifically on one or more support positions. It is also possible to operate the two compensating gas inlets or outlets in the azimuthal sections corresponding to the area of the azimuthal sections of the support position in a different manner, for example, by feeding the gas flow into the process chamber via one compensating gas inlet or outlet and sucking the gas flow out of the process chamber via the other compensating gas inlet or outlet, i.e., by generating a local overpressure in the area of one compensating gas inlet or outlet and a local underpressure in the area of the other compensating gas inlet or outlet. This means that the flow profile at the edge of the substrate can be influenced differently than the flow profile in the center area of the substrate.

[0026] The control device is preferably programmed so that the above-mentioned gas pulse is generated synchronously with the speed of the susceptor.During the rotation of the susceptor, multiple gas pulses can be generated so that the fluid profiles at different support positions can be influenced individually. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The following is an explanation of an embodiment of the present invention with reference to the accompanying drawings.

[0028] Figure 1 Schematically shows a vertical cross section through a region of a process chamber of a CVD reactor, wherein an outer edge 5 ′ of a susceptor 5 adjoins an opening of a control gas inlet 10 and an exhaust member 9 , in order to illustrate the flow profile of a process gas flow S1 formed in the process chamber above the susceptor 5 ;

[0029] Figure 2 Schematically shows the Figure 1 The horizontal plane of the fluid profile;

[0030] Figure 3 shows a cross section of a reactor housing 1 of a first embodiment;

[0031] Figure 4 It is along Figure 3 Sectional view along line IV-IV;

[0032] Figure 5 Show the basis Figure 4 A diagram of a second embodiment of the present invention;

[0033] Figure 6 Show the basis Figure 4 A diagram of a third embodiment of the present invention;

[0034] Figure 7 Shown according to Figure 4 A diagram of a fourth embodiment of the present invention;

[0035] Figure 8 Shown according to Figure 4 A diagram of a fifth embodiment of the present invention;

[0036] Figure 9 Shown according to Figure 4 An illustration of a sixth embodiment of the present invention;

[0037] Figure 10 Shown according to Figure 4 An illustration of a seventh embodiment,

[0038] Figure 11 Shown according to Figure 4 An illustration of an eighth embodiment,

[0039] Figure 12 Shown according to Figure 11 An illustration of a ninth embodiment,

[0040] Figure 13 Shown according to Figure 11 An illustration of a tenth embodiment,

[0041] Figure 14 Shown according to Figure 10 An illustration of an eleventh embodiment,

[0042] Figure 15 Shown according to Figure 3 An illustration of a twelfth embodiment,

[0043] Figure 16 Shown according to Figure 3 An illustration of a thirteenth embodiment,

[0044] Figure 17 Shown according to Figure 4 An illustration of a fourteenth embodiment,

[0045] Figure 18 Shown according to Figure 4 An illustration of a fourteenth embodiment;

[0046] Figure 19 Shown according to Figure 4 FIG15 is an illustration of a fifteenth embodiment of the present invention. DETAILED DESCRIPTION

[0047] The problem on which the present invention is based will be solved by Figure 1 and Figure 2 And refer to Figure 3 and Figure 4 To explain:

[0048] Figure 3 A CVD reactor is shown, as is generally known from DE 102019104433 A1. Reference is therefore also made to the descriptions therein regarding the design and function of the CVD reactor. The CVD reactor comprises a reactor housing 1 having sidewalls 3, a base 4, and a lid 2, each of which is specifically made of metal, such as aluminum or stainless steel. This means that the housing cavity is sealed airtight from the outside. An inlet member 6 is located within the housing cavity, through which process gas can be supplied to the housing cavity. The inlet member 6 has one or more gas outlets 6', which preferably extend circumferentially around the inlet member 6, which is arranged in the center of the housing cavity, so that a rotationally symmetrical, uniform process gas flow S1 is supplied to the process chamber surrounding the inlet member 6 using the inlet member 6. A gas mixing system 20 can be used to provide the process gas supplied to the inlet member 6. The gas mixing system 20 can be controlled by a control device 18.

[0049] The process chamber extends below the process chamber lid 11 and above the susceptor 5. The susceptor 5 is supported by a carrier 12, which can be used to rotate the susceptor 5 about its rotation axis A, so that it rotates in a horizontal plane. The susceptor 5 supports multiple substrate holders 7, each of which forms a support position. In an embodiment, the substrate holders 7 can rest on an air cushion (not shown) generated by a purge gas flow, which can also be used to rotate the substrate holders 7 about the rotation axis B. The surface temperature of the substrates 7 can be measured using a pyrometer 21.

[0050] The heating device 13 is located below the susceptor 5. In an embodiment, the heating device 13 is formed by a spiral coil that generates an RF field. The RF field is used to generate eddy currents in the susceptor 5 so as to bring the susceptor 5 to a process temperature.

[0051] An exhaust member 9 extending along an arcuate edge 5' of the base 5 is located radially outside the base 5. The exhaust member has an opening 9' pointing in the direction of the edge 5' of the base 5. The exhaust member 9 is connected to a pump (not shown) via a plurality of gas pipes (also not shown) to draw gas from the channel of the exhaust member 9.

[0052] exist Figure 3 、 Figure 8 and Figure 9In the illustrated embodiment, a sealing plate 8 is located below the underside of the susceptor 5. The sealing plate does not rotate with the susceptor 5 but is fixedly attached to the reactor housing 1, for example, resting on a step of the exhaust member 9. The sealing plate 8 is located between the heating device 13 and the underside of the susceptor 5, thereby forming a horizontal gap 17 between the sealing plate 8 and the susceptor 5. Temperature-controlled gas can be supplied into this gap 17 via a gas line 14. A flow of temperature-controlled gas is formed, which flows radially through the gap 17 and into the region radially outside the edge 5' of the processor 5 through the opening 10.

[0053] A mixture of H2 and N2 can be fed into the gas line 4 via two mass flow controllers 28, 29 and a switching valve or mixing valve 27 controlled by the control device 18. It enters the gap 17 from the feed opening 14' and forms a control gas flow S2 flowing through the gap 17.

[0054] Figure 4 An embodiment is shown in which only one gas line 14 is provided, which opens into the gap 17 at exactly one circumferential position, thereby forming only one outlet 10, which is located at Figure 4 The end of the flow path for the temperature control gas is shown in dashed lines. To thermally influence specific support locations 7, the temperature control gas is supplied in pulses via the gas line 14 in synchronization with the rotational movement of the susceptor 5. The temperature control gas flows along the flow path in order to locally influence the heat flow to or from one of the support locations 7.

[0055] With a further pyrometer 22 , the temperature below the susceptor 5 can be measured.

[0056] Figure 1 and Figure 2 The schematic diagram shows a process gas flow S1 and a control gas flow S2, which are mixed at the active point 31, wherein the active point 31 is arranged radially outside the edge 5' of the base 5 and upstream of the opening 9'. If the control gas is supplied to the area of the active point 31 via a locally arranged control gas inlet 10, the pressure or the flow profile changes locally there, which is Figure 2 This is schematically shown in Figure 1 because the streamlines no longer extend in a precise radial direction. The change in the flow profile causes the growth rate of the layer deposited on the substrate 7 to be different at the edge than upstream of the edge. The crystal composition at the edge can also be different from that upstream.

[0057] In order to reduce the influence of the control gas flow S2 on the fluid profile, Figures 3 to 8 In the embodiment shown, the control gas flow S3 is fed into the housing cavity through the control gas inlet or outlet 23 ′ at the same radial position as the control gas inlet 10 .

[0058] exist Figure 3 In the illustrated embodiment, the control gas inlet or outlet 23' opens into the bottom of the annular channel of the gas outlet channel 9. The control gas flowing out of the control gas inlet or outlet 23' does not necessarily need to be discharged through the opening 9' in the direction of the active point 31. The influence of the control gas flow S3 on the flow profile can also occur if the control gas flow S3 is accompanied only by a localized, and in particular, pulsating, pressure change at the active point 31. Such gas pulses can be generated using the mass flow controller 19 and, if necessary, additional valves.

[0059] exist Figure 5 The second exemplary embodiment shown in FIG. 1 differs from the first exemplary embodiment essentially in that two diagonally opposite gas lines 14 are provided, which can be acted upon independently of one another by control gas and to which a gas supply line 23 for equalizing gas is respectively assigned in certain areas.

[0060] Figure 6 The third embodiment shown differs from the other two embodiments essentially in that each bearing point 7 is locally assigned a gas line 14 and thus a control gas inlet 10. Furthermore, each control gas inlet 10 is also assigned a compensating gas inlet or outlet 23'.

[0061] exist Figure 7 The fourth embodiment shown in FIG differs from the previously described embodiments primarily in that a compensating gas inlet or outlet 23' is locally associated with each bearing point 7, but the number of control gas inlets 10 differs from the number of compensating gas inlets or outlets 23'. In the embodiment, there is only one control gas inlet 10. However, it can also be provided that each bearing point 7 has an associated control gas inlet 10.

[0062] exist Figure 8 The fifth embodiment shown in Figure 3 The embodiment shown in the embodiment differs mainly in that the equalizing gas inlet or outlet 23 'opens into the side wall of the channel of the gas inlet component. The opening 9 ' of the gas outlet component 9 can have such a width that the gas flow emerging from the opening 23 'acts on the action point 31.

[0063] Figure 9 The sixth embodiment shown is the same as Figure 3 and Figure 8The embodiment shown differs primarily in that the compensating gas flow S3 does not flow into the reactor housing, but rather is directed out of the reactor housing. In particular, a suction flow is generated by means of a suction line 23 and a pump 24 controlled by a valve 25, with which the compensating gas flow S3 is pumped out of the channel of the exhaust component 9 in order to generate a local negative pressure at the point of action 31. If the compensating gas flow S3 flowing through one of the compensating gas inlets or outlets 23' is less than the compensating gas flow through all other openings, a pressure control is performed according to the pressure control. Figure 7 A similar effect can be achieved by an arrangement of . The width of the opening 9 ′ of the exhaust component 9 can be adjusted in such a way that the negative pressure generated via the suction line takes effect at the action point 31 .

[0064] exist Figure 10 In the seventh embodiment shown, the control gas inlet 10 is missing. No control gas flow that interferes with the flow profile is generated here. However, a compensating gas inlet or outlet 23' is provided, by means of which a pressure difference arranged locally at a circumferential point can be generated, wherein a compensating gas flow S3 is supplied to the housing cavity via the compensating gas inlet or outlet 23', as shown in FIG. Figure 10 As shown, or the compensating gas flow S3 is pumped out of the housing cavity, as is the case in the embodiment not shown. Here, it is also advantageous if the compensating gas inlet or outlet 23' opens into a channel of the exhaust component 9. This can be done in the side wall or on the floor. The process gas flow S1 is mixed with the compensating gas flow S3 in the exhaust component 9. It can be achieved Figures 4 to 7 Arrangement of the gas supply line 23 or the compensating gas inlet or outlet 23 ′ is shown. Here, the opening 9 ′ can also have an opening width such that the compensating gas discharged from the gas supply line 23 can act on the action point 31 .

[0065] exist Figure 11 The eighth embodiment shown in Figure 10 The difference to the embodiment shown in FIG is essentially that the compensating gas inlet or outlet 23 ′ does not open into the exhaust component 9, but rather into the exhaust component 9 in the region of the active point 31 downstream of the edge 5 ′ of the base. The compensating gas flow S3 can have an adjustable viscosity, an adjustable thermal conductivity or other adjustable properties. This is made possible by the fact that the compensating gas flow S3 can be an adjustable mixture of different gases. For example, a hydrogen flow can be fed into the gas supply line 23 using a mass flow controller 19. A nitrogen flow can be fed into the gas supply line 23 using a mass flow controller 19 ′, the two gases being mixed in the gas supply line 23 so that a compensating gas having a predetermined composition can be discharged from the opening 23 ′.

[0066] In one embodiment, it can be provided that the composition of the compensation gas corresponds to the composition of the control gas flow S2 .

[0067] exist Figure 12 In the embodiment shown, the susceptor 5 has a gas supply line 23 that opens near the edge 5' of the susceptor. A mixture of hydrogen and nitrogen can be supplied to this gas supply line 23, which serves as a make-up gas flow S3 that enters the reactor chamber downstream of the support position 7. The end of the gas supply line 23 directs the make-up gas flow S3 obliquely upward.

[0068] exist Figure 13 In the embodiment shown, the end of the gas supply line 23 imparts a downward direction to the compensating gas flow S3.

[0069] In an embodiment not shown, the gas line 23 may also lead to a pump so that the suction flow can leave the reactor chamber through openings 23' on the edge 5' of the substrate 5. A suction opening may be provided which rotates together with the susceptor.

[0070] exist Figure 14 In the embodiment shown, it basically corresponds to Figure 10 In the illustrated embodiment, the compensating gas inlet or outlet 23' is not assigned to the exhaust component 9. Instead, the compensating gas inlet or outlet 23' is arranged in the region of the process chamber ceiling 11. Here, the compensating gas inlet or outlet 23' is arranged downstream of the support point 7. In particular, it can be arranged downstream of the edge 5'. The gas flow emerging from the compensating gas inlet or outlet 23' can be directed to the exhaust component 9 and flow over the edge 5' of the susceptor.

[0071] Here too, the opening 23 ′ can be used as a suction opening.

[0072] Figure 15 The embodiment shown corresponds essentially to Figure 3 The embodiment shown. Figure 12 and Figure 13 Similar to the embodiment shown, the compensating gas inlet or outlet 23' is assigned in a fixed manner to the susceptor 5. Here, the compensating gas inlet or outlet 23' is located in the region of the narrow peripheral wall of the susceptor 5. However, as Figure 12 and Figure 13 As shown, it is also possible to generate a directional flow having not only a radial component but also an axial component.

[0073] Figure 16 The embodiment shown corresponds essentially to Figure 3 However, the difference is that, as Figure 14In the embodiment shown, the compensation gas inlet or outlet 23' is arranged in the process chamber top 11. Here, a directed compensation gas flow S3 can also flow out of the compensation gas inlet or outlet 23', preferably, the flow direction of the compensation gas flow S3 is directed toward the exhaust component 9.

[0074] Figure 17 Shown Figure 12 、 Figure 13 and Figure 15 Arrangement of the compensating gas inlet or outlet 23' of the embodiment. Each support position 7 can be assigned a compensating gas inlet or outlet 23' downstream. The compensating gas inlet or outlet 23' can be supplied by a common gas supply line, so that the mass flow provided, for example, by the mass flow controllers 19, 19' is divided into a corresponding number of sub-flows.

[0075] In each embodiment of the present application, each support position 7 can also be assigned a compensating gas inlet or outlet 23', through which a separate gas flow can flow. For this purpose, each compensating gas inlet or outlet 23' can have a separate supply line with at least one mass flow controller 19, 19'. However, the separate gas supply lines preferably each have a pair of mass flow controllers 19, 19', so that separate gas mixtures can be supplied.

[0076] The latter also applies to Figure 11 、 Figure 14 and Figure 16 The embodiment shown, in which the compensating gas inlet or outlet 23 ′ is assigned to the housing, can also be arranged in the housing with the same angular distribution as the bearing points 7 are arranged on the base 5 .

[0077] In the embodiment shown in the drawings, the control gas inlet 10 is located upstream of the opening 9' of the exhaust member 9. In embodiments not shown, the control gas inlet 10 can also directly lead to the exhaust member 9, for example, to the wall of the annular channel that defines the exhaust member 9. The active point 31 is then located within the exhaust member 9. In these embodiments, even without the additional compensating gas flow S3, the fluid profile above the base 5 will also be affected by the control gas flow S2, because increased pressure is locally formed in the area of the edge 5' of the base 5. Using the compensating gas flow S3, this local pressure unevenness can be reduced, for example, by supplying compensating gas S3 to the intake member 6 at different circumferential positions, and at the position where the control gas flow S2 leads to the exhaust member 9, a lower compensating gas flow S3 is supplied to the exhaust member 9. Alternatively, the compensating gas flow S3 can also be pumped out of the exhaust member 9 at the active point. Advantageously, the compensating gas flow S3 is directly supplied to the exhaust member 9 or directly pumped out of the exhaust member 9.

[0078] The previously described arrangement not only allows for compensation of disturbances in the fluid profile within the process chamber caused by structural deficiencies in the process chamber or by localized flow or pressure variations, particularly at the outer edges of the process chamber, but also allows for specific influence on the fluid profile using the compensating gas flow S3. This can be done synchronously with the rotation of the susceptor 5, as previously described. However, the fluid profile can also be influenced by an asynchronous or constant compensating gas flow S3.

[0079] exist Figure 18 and Figure 19 In the figure, two radial lines R1 and R2 are further shown, each radial line extending from the center Z of the air intake member 6 arranged in the center of the base 5 on the base 6 in the radial direction, the radial line R1 is tangent to the edge 7' of the support position 7, and the radial line R2 passes through the center 7" of the support position 7.

[0080] exist Figure 18 In the embodiment shown, the compensation gas inlet or outlet is operated in such a way that a gas pulse is generated each time a radial line R1 of the rotary susceptor 5 passes through the compensation gas inlet or outlet 23 ′, so that the flow profile is affected only in the region of the support point or the edge 7 ′ of the substrate supported there.

[0081] In a variant, the compensation gas inlet or outlet 23 ′ is operated in such a way that a gas pulse is generated each time a radial line R2 of the rotary susceptor 5 passes through the compensation gas inlet or outlet 23 ′, so that the flow profile is affected only in the region of the center 7 ″ of the support position or the substrate stored there.

[0082] In both cases, the pulse length is so short that the flow is affected only over an azimuthal section of the total angle over which the support point extends. However, the pulse length can also be dimensioned so that the flow is affected over the entire azimuthal angle over which the support point extends.

[0083] exist Figure 19 In the embodiment shown, two compensating gas inlets or outlets 23', 23" are provided, which are closely adjacent to one another so that the angular distance between them is smaller than the azimuthal angle of extension of the support location 7 or the substrate supported by the support location 7. However, it is also possible to generate a gas flow which enters the process chamber through one of the two compensating gas inlets or outlets 23', 23" and flows out of the process chamber through the other compensating gas inlet or outlet 23', 23".

[0084] This is preferably done in such a way that the gas pulse influences only the flow profile above one support point 7 or a substrate arranged on a support point 7. The gas pulse can also influence only a certain angle above a support point 7 or a substrate. This is done in particular by synchronizing the pressure change achieved by the gas pulse with the rotation of the susceptor.

[0085] The above statements are intended to explain the invention encompassed by the present application as a whole, which independently improves upon the prior art at least by the combination of the following features, whereby any combination of two, more or all of these features may also be combined, namely:

[0086] A method is characterized in that downstream of the control gas inlet 10 and downstream of the bearing point 7 , a locally defined compensating gas flow S3 of compensating gas is fed into the housing cavity or pumped out of the housing cavity via a compensating gas inlet or outlet 23 ′.

[0087] A method, characterized in that the compensating gas flow S3 is controlled by means of a control device 18 so that the locally defined influence of the control gas flow S2 on the flow profile downstream of the support point 7 caused at the action point 31 is compensated by the compensating gas flow S3, and / or the sum of the locally defined control gas flow S2 and the locally assigned compensating gas flow S3 is kept at a constant value by means of the control device 18.

[0088] A method, characterized in that a controlled gas flow S2 is supplied to an area between a susceptor 5 and a temperature control device 13, by means of which a heat flow to or from the susceptor 5 is influenced in a locally defined area and / or the process gas contains a reaction gas having a III main group element and a reaction gas having a V main group element and / or the reaction gas has an arsenic compound, a phosphorus compound and / or an indium compound or a gallium compound, and the susceptor is brought to a process temperature by means of the heating device 13, at which process temperature a III-V semiconductor layer is deposited on a substrate 32.

[0089] A method is characterized in that the compensating gas flow S3 is fed directly into the exhaust component 9 or pumped out of the exhaust component 9 .

[0090] An arrangement characterized in that a compensating gas inlet or outlet 23 ′ opens downstream of the control gas inlet 10 and downstream of the bearing point 7 in the exhaust component 9 , via which compensating gas can be fed into the housing cavity or pumped out of the housing cavity.

[0091] A device, characterized in that a control device 18 for controlling valves 27, 25 and mass flow controllers 19, 28, 29 to influence at least one control gas flow S2 and at least one compensation gas flow S3 is arranged in such a way that, by means of the compensation gas flow S3 at the action point 31, the locally defined influence of the control gas flow S2 on the flow profile of the process gas flow S1 at the support position 7 is compensated and / or the sum of the locally defined control gas flow S2 and the compensation gas flow S3 locally assigned thereto is maintained at a constant value.

[0092] A device, characterized in that a control gas flow S2 is guided through a gap 17 between a side of the susceptor 5 facing away from the support position and a temperature control device 13, so that the control heat flow to or from the susceptor 5 is influenced in a locally defined area by the control gas flow S2, and that a compensating gas inlet or outlet 23' is arranged at the point where the control gas flow S2 mixes with the process gas flow S3, based on the extension plane of the susceptor 5.

[0093] An arrangement characterized in that a compensating gas inlet opening 23 ′ is arranged downstream of an edge 5 ′ of the base 5 adjacent to the exhaust component 9 and / or a compensating gas inlet or outlet 23 ′ is arranged in the exhaust component 9 .

[0094] A device, characterized in that the support positions 7 are arranged in a circular shape around the center of a base 5 having an outer edge 5' extending on a circular line, and an annularly constructed exhaust component 9 surrounds the base 5, wherein a control gas inlet 10 assigned to the support position and a compensation gas inlet or compensation gas outlet opening 23' spaced apart from the control gas inlet 10 in the radial direction are locally assigned to multiple or each of the support positions 7, and a control gas flow S2 or a compensation gas flow S3 individually controlled by a control device 18 flows through the compensation gas inlet or compensation gas outlet opening respectively.

[0095] A device, characterized in that the base 5 can be driven to rotate about the rotation axis A and is controlled by a control device 18. The control gas or compensation gas flows in a pulsed manner by controlling the gas inlet 10 or the compensation gas inlet or outlet 23' synchronously with the rotation of the base 5, so that the process parameters at each support position 7 are maintained at a predetermined value.

[0096] A method is characterized in that the compensating gas inlet or outlet 23 ′ is arranged in such a way, or the compensating gas flow S3 flowing through the compensating gas inlet or outlet 23 ′ is guided in such a way that the flow profile above the susceptor 5 is influenced at least in the region of the edge 5 ′ of the susceptor 5 .

[0097] A method is characterized in that the compensating gas is fed radially outside the base 5 into the housing cavity or into the venting component 9 or is pumped out of the housing cavity or the venting component 9 .

[0098] An arrangement characterized in that the compensating gas inlet or outlet 23 ′ is arranged and the control device 18 is programmed such that the supply or pumping of compensating gas influences the flow profile above the susceptor 5 , at least in the region of the edge 5 ′ of the susceptor 5 .

[0099] An arrangement characterized in that the compensating gas inlet or outlet 23 ′ is arranged radially outside the base 5 or in the exhaust member.

[0100] A method or an apparatus, characterized in that a compensating gas inlet or outlet 23' is assigned to the susceptor 5 and is arranged radially outside the support position 7 adjacent to the edge 5' of the susceptor 5, and / or the compensating gas flow S3 originates from the compensating gas inlet or outlet 23', which is arranged adjacent to the edge 5' and - with respect to the process gas flow 51 - downstream of the support position 7, and / or the compensating gas flow S3 is an adjustable mixture of two gases with different viscosities or thermal conductivities.

[0101] A device or a method, characterized in that one or more outlets 23 ′, 23 ″ are arranged and operated in such a way that the fluid profile is affected only in the region of the edge 7 or only at the edge 7 ′ or in the center 7 ″ of a substrate located on a substrate holder 7 , or the fluid profile is affected over the entire area of the surface of a substrate located on the substrate holder 7 .

[0102] A device or a method, characterized in that the first outlet 23' is arranged and operated so that the fluid profile is affected only or only in the region of the edge 7' of the substrate placed on the substrate holder 7, and the second outlet 23" is arranged and operated so that the fluid profile is affected only or only in the region of the center 7" of the substrate placed on the substrate holder 7.

[0103] All disclosed features (individually but also in combination with one another) are essential to the present invention. The disclosure content of the relevant / attached priority documents (copies of prior applications) is hereby fully incorporated into the disclosure content of the present application, and is also intended to include the features of these documents in the claims of the present application. Even without the features of the cited claims, the dependent claims, by their features, represent independent inventive developments of the prior art and, in particular, are intended to be divisional applications based on these claims. The invention specified in each claim may additionally have one or more of the features provided in the above description, in particular those designated by reference numerals and / or in the list of reference numerals. The invention also relates to designs in which the individual features mentioned in the above description are not implemented, in particular if they are obviously unnecessary for the respective intended use or can be replaced by other means having the same technical effect.

[0104] Reference Signs List

[0105] 1 Reactor shell

[0106] 2 lids

[0107] 3 side walls

[0108] 4 bottom

[0109] 5 base

[0110] 5' edge

[0111] 6Intake components

[0112] 6' exit

[0113] 7 substrate holder, support position

[0114] 7' Edge

[0115] 8 sealing plate

[0116] 9 Exhaust components

[0117] 9' opening

[0118] 10 Control gas inlet

[0119] 11Process chamber cover

[0120] 12 carriers

[0121] 13 Heating device

[0122] 14 Gas pipeline

[0123] 17 Gap

[0124] 18 control devices

[0125] 19Mass flow controller

[0126] 19' Mass Flow Controller

[0127] 20 Gas supply system

[0128] 21 First Pyrometer

[0129] 22 Second Pyrometer

[0130] 23 Gas supply line

[0131] 23' Make-up gas inlet or outlet

[0132] 23” make-up gas inlet or outlet

[0133] 24 pumps

[0134] 25 control valve

[0135] 27 conversion valve

[0136] 28 Mass Flow Controllers

[0137] 29 Mass Flow Controller

[0138] 30 cooling channels

[0139] 31 Site of action

[0140] 32 substrate

[0141] A base rotation axis

[0142] B substrate holder rotation axis

[0143] S1 process gas flow

[0144] S2 controls gas flow

[0145] S3 make-up gas flow

[0146] R1 radial line

[0147] R2 radial line

Claims

1. A method for processing a plurality of substrates (32), wherein the substrates (32) are arranged on a support position (7) of a susceptor (5) in a housing cavity of a reactor housing (1), wherein a process gas flow (S1) of a process gas is fed into the housing cavity from one or more gas outlet openings (6') of a gas inlet component (6) such that the process gas flows uniformly through the support position (7) to an exhaust component (9) arranged downstream of the support position (7) with respect to the process gas flow, through which the process gas is led out of the housing cavity, wherein A locally defined control gas flow (S2) of control gas is fed into the housing cavity via at least one control gas inlet (10) leading to the housing cavity, characterised in that downstream of the control gas inlet (10) and downstream of the bearing point (7), a locally defined compensating gas flow (S3) of compensating gas is fed into the housing cavity or pumped out of the housing cavity via the compensating gas inlet or outlet (23').

2. The method according to claim 1, characterized in that The compensating gas flow (S3) is controlled by means of a control device (18) in such a way that a locally defined influence on the flow profile caused by the control gas flow (S2) at the point of action (31) downstream of the support point (7) is compensated by the compensating gas flow (S3), and / or the sum of the locally defined control gas flow (S2) and the compensating gas flow (S3) assigned to the control gas flow is kept at a constant value by means of the control device (18).

3. The method according to any one of the preceding claims, characterized in that The control gas flow (S2) is supplied to the area between the susceptor (5) and the temperature control device (13), and the temperature control device is used to influence the heat flow to or from the susceptor (5) in a locally limited area, and / or the process gas contains a reaction gas with a group III element and a reaction gas with a group V element, and / or the reaction gas contains an arsenic compound, a phosphorus compound and / or an indium compound or a gallium compound, and the susceptor is brought to a process temperature by means of a heating device (13), at which the III-V semiconductor layers are respectively deposited on the substrate (32).

4. The method according to any one of the preceding claims, characterized in that The compensating air flow (S3) is fed directly into the exhaust component (9) or is pumped out of the exhaust component (9).

5. A device comprising a base (5) arranged in a housing cavity of a reactor housing (1), a plurality of support positions (7) being arranged on the base, each for at least one substrate (32) to be processed in the device, the device comprising a gas inlet component (6) having one or more gas outlets (6') such that a process gas flow (S1) of a process gas discharged through the one or more gas outlets (6') flows uniformly through the support positions (7), and an exhaust component (9) arranged downstream of the support positions (7) relative to the process gas flow (S1), by means of which the process gas or gaseous reaction products formed during the processing can be discharged from the housing cavity, wherein: At least one control gas inlet (10) opens into the housing cavity, by means of which a locally defined control gas flow (S2) of control gas can be supplied to the housing cavity, and the control gas flow can be discharged from the housing cavity via an exhaust component (9), characterized in that a compensating gas inlet or outlet (23') opens into the exhaust component (9) downstream of the control gas inlet (10) and downstream of the bearing point (7), by means of which compensating gas can be supplied to the housing cavity or pumped out of the housing cavity.

6. The device according to claim 5, characterized in that The control device (18) for the control valve (27, 25) and the mass flow controller (19, 28, 29) for influencing the at least one control gas flow (S2) and the at least one compensation gas flow (S3) are configured such that a locally defined influence of the flow profile of the process gas flow (S1) at the support position (7) by the compensation gas flow (S3) at the point of action (31) is compensated by the control gas flow (S2), and / or the sum of the locally defined control gas flow (S2) and the compensation gas flow (S3) locally assigned thereto is kept at a constant value.

7. The device according to claim 5 or 6, characterized in that The control gas flow (S2) is guided through a gap (17) between the side of the susceptor (5) facing away from the support position and the temperature control device (13) so that the heat flow to or from the susceptor (5) is influenced in a locally defined area by the control gas flow (S2), and the compensation gas inlet or outlet (23') is arranged at the place where the control gas flow (S2) mixes with the process gas flow (S3) relative to the extension plane of the susceptor (5).

8. The device according to any one of claims 5 to 7, characterized in that The compensating gas inlet (23') is arranged downstream of an edge (5') of the base (5) adjacent to the exhaust member (9), and / or the compensating gas inlet or outlet (23') is arranged in the exhaust member (9).

9. The device according to any one of claims 5 to 8, characterized in that The support positions (7) are arranged in a circular shape around the center of a base (5) having an outer edge (5') extending on a circular line, and an annularly constructed exhaust component (9) surrounds the base (5), wherein a control gas inlet (10) associated with the support position and a compensation gas inlet or outlet (23') spaced apart from the control gas inlet (10) in the radial direction are locally allocated to a plurality of or each of the support positions (7), and a control gas flow (S2) or a compensation gas flow (S3) individually controlled by the control device (18) flows through the control gas inlet or outlet respectively.

10. The device according to claim 9, characterized in that The base (5) can be driven to rotate about the rotation axis (A), and under the control of the control device (18), the control gas or the compensation gas flows in a pulsed manner through the control gas inlet (10) or the compensation gas inlet or outlet (23') in synchronization with the rotation of the base (5), so that the process parameters at each support position (7) are maintained at a predetermined value.

11. A method for processing a plurality of substrates (32), wherein: A susceptor (5) arranged in a housing cavity of a reactor housing (1) is driven in rotation about a rotation axis (A), support positions (7) being arranged on the susceptor (5) in a uniform circumferential distribution about the rotation axis (A), at least one substrate (32) being arranged on each of the support positions, wherein a process gas is fed into the housing cavity on the side of the susceptor (5) having the support position (7) via a gas inlet component (6), the process gas flows over the surface of the substrate (7) while forming a flow profile, reaches the edge (5') of the susceptor (5) and, by means of a gas flow component (6) surrounding the substrate (7), An exhaust mechanism (9) of a base (5) is led out of the housing cavity, wherein, synchronously with the rotation of the base (5), a compensating gas flow (S3) of compensating gas is supplied to the housing cavity in a locally defined manner through a compensating gas inlet or outlet (23') or pumped out of the housing cavity, characterized in that the compensating gas inlet or outlet (23') is arranged or the compensating gas flow (S3) flowing through the compensating gas inlet or outlet (23') is guided such that the flow profile above the base (5) is influenced at least in the region of an edge (5') of the base (5).

12. The method according to claim 11, characterized in that The compensating gas is supplied radially outside the base (5) into the housing cavity or the venting component (9), or is pumped out of the housing cavity or the venting component (9).

13. A device comprising a base (5) arranged in a housing cavity of a reactor housing (1), a plurality of support positions (7) being arranged on the base, each for at least one substrate (32) to be processed in the device, the device comprising a gas inlet component (6) having one or more gas outlets (6') so that a process gas flow (S1) of a process gas discharged through the one or more gas outlets (6') and controlled by a control device (18) flows through the support position (7) while forming a flow profile, the device comprising an exhaust component (9) arranged downstream of the support position (7) relative to the process gas flow (S1), and by means of which the process gas or gaseous reaction products formed during the processing can be discharged from the housing cavity, wherein: At least one compensating gas inlet or outlet (23') opens into the housing cavity, and a locally defined compensating gas flow (S3) of compensating gas, which is controlled by the control device, can be fed into the housing cavity or can be pumped out of the housing cavity, characterized in that the compensating gas inlet or outlet (23') is arranged and the control device (18) is programmed so that the feeding or pumping of the compensating gas influences the flow profile above the base (5) at least in the region of the edge (5') of the base (5).

14. The device according to claim 13, characterized in that The compensating gas inlet or outlet (23') is arranged radially outside the base (5) or in the exhaust component.

15. The device or method according to any one of the preceding claims, characterized in that The compensating gas inlet or outlet (23') is assigned to the base (5) and is arranged radially outside the bearing point (7) adjacent to the edge (5') of the base (5).

16. The device or method according to any one of the preceding claims, characterized in that The compensating gas flow (S3) originates from a compensating gas inlet or outlet (23') which is adjacent to the edge (5') and is arranged downstream of the support point (7) with respect to the process gas flow (51).

17. The device or method according to any one of the preceding claims, characterized in that The compensating gas flow (S3) is an adjustable mixture of two gases with different viscosities or thermal conductivities.

18. The device or method according to any one of the preceding claims, characterized in that One or more outlets (23', 23") are arranged and operated in such a way that the fluid profile is affected only or substantially only in the region of an edge (7') or center (7") of a substrate placed on the substrate holder (7), or the fluid profile is affected over the entire region of the surface of the substrate placed on the substrate holder (7).

19. The device or method according to any one of the preceding claims, characterized in that The first outlet (23') is arranged and operated in such a way that the fluid profile is affected only or substantially only in the region of the edge (7') of the substrate located on the substrate holder (7), and the second outlet (23") is arranged and operated in such a way that the fluid profile is affected only or substantially only in the region of the center (7") of the substrate located on the substrate holder (7).

20. A device or method, characterized in that One or more features of any one of the preceding claims.

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