Plasma processing apparatus and substrate support

Abstract

The plasma processing apparatus includes: a plasma processing chamber; a susceptor disposed in the plasma processing chamber; and an electrostatic chuck disposed on the upper surface of the base and having a support surface for supporting at least one of a substrate and a ring assembly, in which the electrostatic chuck includes at least one conductive member, and in which at least one heat transfer gas supply hole having a diameter of 0.2 mm or less and penetrating from the support surface to the back surface of the support surface is formed. The at least one conductive member is disposed around at least a portion of the heat transfer gas supply hole.

Description

Technical Field

[0001] The present disclosure relates to a plasma processing apparatus and a substrate support. Background Art

[0002] Patent Document 1 discloses a plasma processing apparatus comprising: a mounting table having a plate-shaped member formed with a first through-hole and a base formed with a second through-hole communicating with the first through-hole; and an embedded member disposed within the first and second through-holes. Patent Document 2 discloses a mounting table comprising: a wafer mounting portion formed with a first through-hole; a base formed with a second through-hole communicating with the first through-hole; and a sleeve disposed within the second through-hole.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-149422

[0006] Patent Document 2: Japanese Patent Application Laid-Open No. 2021-28958 Summary of the Invention

[0007] Technical problem to be solved by the invention

[0008] The technology disclosed herein is used to prevent or suppress abnormal discharge in a heat transfer gas flow path.

[0009] Technical means to solve the problem

[0010] One embodiment of the present disclosure provides a plasma processing device, comprising: a plasma processing chamber; a susceptor disposed in the plasma processing chamber; and an electrostatic chuck disposed on the upper surface of the susceptor and having a supporting surface for supporting at least one of a substrate and a ring assembly, wherein the electrostatic chuck includes at least one conductive component, and at least one heat transfer gas supply hole with a diameter of less than 0.2 mm is formed in the electrostatic chuck, extending from the supporting surface to the back side of the supporting surface, and at least one of the conductive components is disposed around at least a portion of the heat transfer gas supply hole.

[0011] Effects of the Invention

[0012] According to the present disclosure, abnormal discharge in the heat transfer gas flow path can be prevented or suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is an explanatory diagram showing a configuration example of a plasma processing system according to an embodiment.

[0014] Figure 2It is a cross-sectional view showing a structural example of a plasma processing apparatus according to an embodiment.

[0015] Figure 3 It is a plan view schematically showing a configuration example of the main body portion according to the first embodiment.

[0016] Figure 4 It is a partial cross-sectional view schematically showing a configuration example of the main body portion of the first embodiment.

[0017] Figure 5 It is a plan view showing an example of the number and arrangement of heat transfer gas supply holes at the gas outlet portion.

[0018] Figure 6 It is a plan view showing another example of the number and arrangement of the heat transfer gas supply holes at the gas outlet portion.

[0019] Figure 7 This is a partial cross-sectional view schematically showing a modified example of the main body portion of the first embodiment.

[0020] Figure 8 This is a partial cross-sectional view schematically showing a modified example of the main body portion of the first embodiment.

[0021] Figure 9 This is a partial cross-sectional view schematically showing a modified example of the main body portion of the first embodiment.

[0022] Figure 10 It is a partial cross-sectional view schematically showing a configuration example of a main body portion according to the second embodiment.

[0023] Figure 11 This is a partial cross-sectional view schematically showing a modified example of the main body portion of the second embodiment.

[0024] Figure 12 This is a partial cross-sectional view schematically showing a modified example of the main body portion of the second embodiment.

[0025] Figure 13 This is a partial cross-sectional view schematically showing a modified example of the main body portion of the second embodiment.

[0026] Figure 14 This is a partial cross-sectional view schematically showing a modified example of the main body portion of the second embodiment.

[0027] Figure 15 This is a partial cross-sectional view schematically showing a modified example of the main body portion of the second embodiment.

[0028] Figure 16 It is a plan view schematically showing a configuration example of a main body portion according to a third embodiment.

[0029] Figure 17 It is a partial cross-sectional view schematically showing a configuration example of a main body portion according to a third embodiment.

[0030] Figure 18 This is a partial cross-sectional view schematically showing a modified example of the main body portion of the third embodiment.

[0031] Figure 19 It is a plan view schematically showing a configuration example of a main body portion according to a fourth embodiment.

[0032] Figure 20 It is a partial cross-sectional view schematically showing a configuration example of a main body portion according to a fourth embodiment.

[0033] Figure 21 This is a partial cross-sectional view schematically showing a modified example of the main body portion of the fourth embodiment.

[0034] Figure 22 This is a partial cross-sectional view schematically showing a modified example of the main body portion of the fourth embodiment.

[0035] Figure 23 It is a plan view schematically showing a configuration example of a main body portion including a conductive embedded member according to a fifth embodiment.

[0036] Figure 24 It is a plan view schematically showing a structural example of a conductive embedded member according to a fifth embodiment.

[0037] Figure 25 It is a cross-sectional view schematically showing a structural example of a conductive embedded member according to a fifth embodiment.

[0038] Figure 26 It is a partial cross-sectional view schematically showing a structural example of a main body portion including a conductive embedded member according to a fifth embodiment.

[0039] Figure 27 It is a plan view schematically showing a modified example of the conductive embedded member according to the fifth embodiment.

[0040] Figure 28 This is a cross-sectional view schematically showing a modified example of the conductive embedded member according to the fifth embodiment.

[0041] Figure 29 It is a plan view schematically showing a modified example of the conductive embedded member according to the fifth embodiment.

[0042] Figure 30 This is a cross-sectional view schematically showing a modified example of the conductive embedded member according to the fifth embodiment.

[0043] Figure 31It is a partial cross-sectional view schematically showing a configuration example of a main body portion according to the sixth embodiment.

[0044] Figure 32 It is a partial cross-sectional view schematically showing a configuration example of a main body portion according to the seventh embodiment.

[0045] Figure 33 It is a partial cross-sectional view schematically showing a configuration example of a main body portion according to the eighth embodiment.

[0046] Figure 34 It is a partial cross-sectional view schematically showing a configuration example of a main body portion according to a ninth embodiment.

[0047] Figure 35 This is a partial cross-sectional view schematically showing a modified example of the main body portion of the ninth embodiment.

[0048] Figure 36 It is a plan view schematically showing a configuration example of a main body portion according to the eleventh embodiment.

[0049] Figure 37 It is a partial cross-sectional view schematically showing a configuration example of a main body portion according to the eleventh embodiment.

[0050] Figure 38 It is a partial cross-sectional view schematically showing a configuration example of a main body portion according to a twelfth embodiment.

[0051] Figure 39 This is a partial cross-sectional view schematically showing a modified example of the main body portion of the twelfth embodiment.

[0052] Figure 40 This is a partial cross-sectional view schematically showing a modified example of the main body portion of the twelfth embodiment.

[0053] Figure 41 This is a partial cross-sectional view schematically showing a modified example of the main body portion of the twelfth embodiment.

[0054] Figure 42 This is a partial cross-sectional view schematically showing a modified example of the main body portion of the twelfth embodiment.

[0055] Figure 43 It is a plan view schematically showing a configuration example of a main body portion according to a thirteenth embodiment.

[0056] Figure 44 It is a partial cross-sectional view schematically showing a configuration example of a main body portion according to a thirteenth embodiment.

[0057] Figure 45 This is a partial cross-sectional view schematically showing a modified example of the main body portion of the thirteenth embodiment.

[0058] Figure 46 It is a plan view schematically showing a configuration example of a main body portion according to a fourteenth embodiment.

[0059] Figure 47 It is a partial cross-sectional view schematically showing a configuration example of a main body portion according to a fourteenth embodiment.

[0060] Figure 48 This is a partial cross-sectional view schematically showing a modified example of the main body portion of the fourteenth embodiment.

[0061] Figure 49 It is a plan view schematically showing a configuration example of a main body portion including an embedded member according to a fifteenth embodiment.

[0062] Figure 50 It is a plan view schematically showing a configuration example of an embedded member according to a fifteenth embodiment.

[0063] Figure 51 It is a cross-sectional view schematically showing a structural example of an embedded member according to a fifteenth embodiment.

[0064] Figure 52 It is a partial cross-sectional view schematically showing a structural example of a main body portion including an embedded member according to a fifteenth embodiment.

[0065] Figure 53 It is a plan view schematically showing a modified example of the embedded member according to the fifteenth embodiment.

[0066] Figure 54 This is a cross-sectional view schematically showing a modified example of the embedded member of the fifteenth embodiment.

[0067] Figure 55 It is a plan view schematically showing a modified example of the embedded member according to the fifteenth embodiment.

[0068] Figure 56 This is a cross-sectional view schematically showing a modified example of the embedded member according to the fifteenth embodiment. DETAILED DESCRIPTION

[0069] In the semiconductor device manufacturing process, a semiconductor wafer (hereinafter referred to as a "substrate") is placed on a substrate support located within a processing module, and various processing steps are performed on the substrate. The substrate support includes an electrostatic chuck that holds the substrate. The electrostatic chuck has a through-hole that forms a heat transfer gas flow path for supplying a heat transfer gas such as helium to the gap between the back surface of the substrate and the surface of the electrostatic chuck. Abnormal discharges can sometimes occur in the space within this through-hole during plasma processing.

[0070] To suppress this abnormal discharge, Patent Document 1 discloses a substrate support portion that includes an embedded component within a through-hole, supplying heat transfer gas through the gap between the embedded component and the through-hole. Furthermore, Patent Document 2 discloses a mounting table having a sleeve that is disposed within a through-hole (second through-hole) provided in a base and forms a portion of the through-hole.

[0071] On the other hand, it has been discovered that in structures such as Patent Documents 1 or 2 that simply embed a component or sleeve within a through-hole, unexpected variations in the space where abnormal discharge can occur may occur due to dimensional tolerances, mounting position tolerances, and free radical depletion of the embedded component or sleeve, leading to abnormal discharge. From this perspective, there is room for improvement in preventing or suppressing abnormal discharge in through-holes.

[0072] Therefore, the technology disclosed herein is used to prevent or suppress abnormal discharge in a heat transfer gas flow path provided in a substrate support portion.

[0073] Hereinafter, the structure of the substrate processing apparatus of this embodiment will be described with reference to the drawings. In addition, in this specification, the same reference numerals are attached to elements having substantially the same functional structure, and repeated descriptions are omitted.

[0074] <Plasma processing system>

[0075] Figure 1 : is a diagram for illustrating a structural example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support portion 11, and a plasma generating portion 12. The plasma processing chamber 10 has a plasma processing space. In addition, the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to the gas supply portion 20 described later, and the gas exhaust port is connected to the exhaust system 40 described later. The substrate support portion 11 is arranged in the plasma processing space and has a substrate supporting surface for supporting a substrate.

[0076] The plasma generating section 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP: Capacitively Coupled Plasma), inductively coupled plasma (ICP: Inductively Coupled Plasma), ECR plasma (Electron-Cyclotron-Resonance Plasma), helicon wave plasma (HWP: Helicon Wave Plasma) or surface wave plasma (SWP: Surface Wave Plasma), etc. In addition, various types of plasma generating sections including AC (Alternating Current) plasma generating sections and DC (Direct Current) plasma generating sections may also be used. In one embodiment, the AC signal (AC power) used in the AC plasma generating section has a frequency in the range of 100kHz to 10GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100kHz to 150MHz.

[0077] The control unit 2 is capable of processing computer-executable commands for causing the plasma processing apparatus 1 to perform the various steps described in the present disclosure. The control unit 2 can be configured to control the various elements of the plasma processing apparatus 1 to perform the various steps described herein. In one embodiment, a portion or all of the control unit 2 can be included in the plasma processing apparatus 1. The control unit 2 can include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 can be configured to perform various control actions by reading a program from the storage unit 2a2 and executing the read program. The program can be stored in the storage unit 2a2 in advance or obtained via a medium when necessary. The obtained program is stored in the storage unit 2a2 and read and executed from the storage unit 2a2 by the processing unit 2a1. The medium can be various storage media readable by the computer 2a, or a communication line connected to the communication interface 2a3. The processing unit 2a1 can be a CPU (Central Processing Unit). The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0078] <Plasma Processing Equipment>

[0079] Hereinafter, a configuration example of a capacitive coupling type plasma processing apparatus will be described as an example of the plasma processing apparatus 1 . Figure 2 This is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0080] A capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. In addition, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas inlet unit. The gas inlet unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet unit includes a shower head 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the sidewall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the shell of the plasma processing chamber 10.

[0081] The substrate support portion 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central area 111a for supporting a substrate W and an annular area 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular area 111b of the main body 111 surrounds the central area 111a of the main body 111 when viewed from above. The substrate W is arranged on the central area 111a of the main body 111, and the ring assembly 112 is arranged on the annular area 111b of the main body 111 in a manner that surrounds the substrate W on the central area 111a of the main body 111. Therefore, the central area 111a includes a substrate supporting surface for supporting the substrate W, and the annular area 111b includes a ring supporting surface for supporting the ring assembly 112. In addition, in the present disclosure, the substrate support portion 11 may include only the main body 111. In addition, the substrate support portion 11 may also include only the electrostatic chuck 121 described later. In other words, in one embodiment, the electrostatic chuck 121 described later alone constitutes the substrate supporting portion 11 of the present disclosure.

[0082] The main body 111 includes a base 120 and an electrostatic chuck 121. The base 120 includes a conductive base 120a made of a conductive material. The conductive base 120a of the base 120 can function as a lower electrode. The electrostatic chuck 121 is arranged on the upper surface of the base 120. The electrostatic chuck 121 includes a dielectric component 122, an electrostatic electrode 123 arranged in the dielectric component 122, and a conductive component 124 at least partially arranged in the dielectric component. The dielectric component 122 has a central area 111a. In one embodiment, the dielectric component 122 further has an annular area 111b. Hereinafter, the substrate supporting surface of the central area 111a or the annular supporting surface of the annular area 111b in the electrostatic chuck 121 will be collectively referred to as the "supporting surface 121a".

[0083] Alternatively, the annular region 111b may be formed by another component surrounding the electrostatic chuck 121, such as an annular electrostatic chuck or an annular insulating component. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating component, or on both the electrostatic chuck 121 and the annular insulating component. Furthermore, at least one RF / DC electrode coupled to the RF power supply 31 and / or DC power supply 32, described later, may be disposed within the dielectric component 122. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or DC signal, described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Furthermore, the conductive base 120a of the susceptor 120 and the at least one RF / DC electrode may function as multiple lower electrodes. Furthermore, the electrostatic electrode 123 may also function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0084] The ring assembly 112 includes one or more ring-shaped components. In one embodiment, the one or more ring-shaped components include one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0085] The substrate support portion 11 also includes a heat transfer gas supply unit 200 configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111 a. The heat transfer gas supply unit 200 supplies heat transfer gas, such as helium, from a heat transfer gas source 201 to the gap G via a heat transfer gas flow path 202 formed in the main body portion 111. Details of the heat transfer gas flow path 202 will be described later.

[0086] The substrate support 11 may also include a temperature control module configured to control at least one of the electrostatic chuck 121, the ring assembly 112, and the substrate W to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 120c, or a combination thereof. A heat transfer fluid, such as salt water or gas, flows through the flow path 120c. In one embodiment, the flow path 120c is formed within the base 120, and one or more heaters are disposed within the dielectric component 122 of the electrostatic chuck 121.

[0087] The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s from the plurality of gas inlet ports 13c through the gas diffusion chamber 13b. In addition, the shower head 13 includes at least one upper electrode. In addition, the gas inlet portion may also include, in addition to the shower head 13, one or more side gas injection portions (SGI: Side Gas Injector) installed at one or more openings formed in the side wall 10a.

[0088] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may, for example, be a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include at least one flow modulation device for modulating or pulsing the flow of the at least one process gas.

[0089] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a portion of the plasma generating unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential can be generated on the substrate W, thereby attracting ions in the generated plasma toward the substrate W.

[0090] In one embodiment, the RF power supply 31 includes a first RF generator 31a and a second RF generator 31b. The first RF generator 31a is configured to couple with at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generator 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0091] The second RF generating unit 31b is configured to couple with at least one lower electrode via at least one impedance matching circuit to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the generating source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the generating source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may also be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In addition, in various embodiments, at least one of the generating source RF signal and the bias RF signal may be pulsed.

[0092] Additionally, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and generates a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and generates a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0093] In various embodiments, the first and second DC signals can be pulsed. In this case, a voltage pulse sequence is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses can have rectangular, trapezoidal, triangular, or a combination thereof. In one embodiment, a waveform generator for generating the voltage pulse sequence from the DC signal is connected between the first DC generator 32a and the at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute the voltage pulse generator. If the voltage pulse generator comprises the second DC generator 32b and the waveform generator, the voltage pulse generator is connected to the at least one upper electrode. The voltage pulses can have either positive or negative polarity. Furthermore, the voltage pulse sequence can include one or more positive voltage pulses and one or more negative voltage pulses within a single cycle. Furthermore, the first and second DC generators 32a and 32b can be provided together with the RF power supply 31, or the first DC generator 32a can be provided in place of the second RF generator 31b.

[0094] The exhaust system 40 can be connected to the gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 can include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump can include a turbomolecular pump, a dry pump, or a combination thereof.

[0095] <Heat Transfer Gas Flow Path>

[0096] (First embodiment)

[0097] Hereinafter, a configuration example of the main body portion 111 according to the first embodiment will be described. Figure 3 It is a plan view schematically showing a configuration example of the main body 111 according to the first embodiment. Figure 4 The outline of the configuration example of the main body 111 of the first embodiment is shown in FIG. Figure 3 A partial cross-sectional view taken perpendicularly to the support surface 121a at position AA.

[0098] exist Figure 3 In the embodiment, at least one gas outlet portion 203 is provided on the support surface 121a of the electrostatic chuck 121. In the present embodiment, twelve gas outlet portions 203 are provided, and these are provided at rotationally symmetrical positions in a plan view of the electrostatic chuck 121.

[0099] exist Figure 4 In the embodiment, at least one heat transfer gas supply hole 210 is formed in a gas outlet portion 203 of the electrostatic chuck 121, extending from the support surface 121a to the back surface 121b of the support surface 121a. At least one conductive component 124 is arranged around at least a portion of the heat transfer gas supply hole 210, and in this embodiment, around the entire portion. In addition, a dot-shaped portion 121d is provided on the support surface 121a of the electrostatic chuck 121, and when the substrate W is placed on the dot-shaped portion 121d, a gap G is formed between the substrate W and the electrostatic chuck 121. In addition, Figure 3 The substrate W and the dot-shaped portion 121d are omitted in the figure.

[0100] A base flow path 211 communicating with the heat transfer gas supply hole 210 is formed in the base 120. The base flow path 211 is connected to the heat transfer gas supply hole 210 at one end and to the heat transfer gas source 201 at the other end. In addition, the base 120 includes a sleeve 212. The sleeve 212 insulates the conductive base 120a of the base 120 from the base flow path 211. The sleeve 212 is formed of an insulating material and constitutes the inner wall of the base flow path 211. In one embodiment, the sleeve 212 is a substantially cylindrical component constituting the base flow path 211 and is embedded and disposed in a through hole provided in the conductive base 120a of the base 120.

[0101] An adhesive layer 213 is provided between the base 120 and the electrostatic chuck 121. A hole is provided in the adhesive layer 213 so as to connect the heat transfer gas supply hole 210 and the base flow path 211. In this embodiment, the hole having the same diameter as the base flow path 211 is formed in the adhesive layer 213. In one embodiment, a hole having the same diameter as the heat transfer gas supply hole 210 is provided at a position of the adhesive layer 213 corresponding to the heat transfer gas supply hole 210. The adhesive layer 213 is not limited thereto and may be formed, for example, of a material having plasma resistance and heat resistance. The adhesive layer 213 may be, for example, an acrylic resin, silicone (silicone resin), an epoxy resin, or the like.

[0102] Figure 5 This is a top view showing the number and arrangement of heat transfer gas supply holes 210 in gas outlet portion 203. At least one heat transfer gas supply hole 210 is formed for each gas outlet portion 203; in this embodiment, seven heat transfer gas supply holes 210 are formed. These holes are arranged in rotationally symmetrical positions when viewed from above the electrostatic chuck 121. The cross-sectional shape of each heat transfer gas supply hole 210, perpendicular to the flow direction of the heat transfer gas supply hole 210, is circular.

[0103] Conductive member 124, positioned around heat transfer gas supply hole 210, uniformizes the potential within heat transfer gas supply hole 210, creating an electric field-free space. Specifically, conductive member 124 forms an electric field-free space within heat transfer gas supply hole 210, thereby preventing or suppressing the occurrence of abnormal discharge.

[0104] The diameter φ of the heat transfer gas supply hole 210 is the diameter of the circle in the cross-sectional shape, which is 0.5 mm or less. In one embodiment, the diameter φ of the heat transfer gas supply hole 210 is 0.2 mm or less. Thus, the occurrence of abnormal discharge in the heat transfer gas supply hole 210 can be more effectively prevented or suppressed. In addition, by making the diameter φ of the heat transfer gas supply hole 210 less than 0.2 mm, the aspect ratio of the heat transfer gas supply hole 210 described later can be made 7 or more. The aspect ratio of the heat transfer gas supply hole 210 is the ratio (t / φ) of the thickness t of the electrostatic chuck 121 to the diameter φ of the heat transfer gas supply hole 210. The thickness t of the electrostatic chuck 121 refers to the distance from the support surface 121a to the back surface 121b of the electrostatic chuck 121 excluding the dot-shaped portion 121d (see Figure 3 As an example, if the support surface 121a is a substrate support surface and the thickness t of the electrostatic chuck 121 is 4.6 mm, the aspect ratio is 23 or greater. As another example, if the support surface 121a is a ring support surface and the thickness t of the electrostatic chuck 121 is 2.8 mm, the aspect ratio is 14 or greater.

[0105] The lower limit of the diameter φ of the heat transfer gas supply hole 210 is not particularly limited, but can be, for example, 0.01 mm or more as the lower limit of the diameter that can be formed by water-conducting laser processing described later.

[0106] Figure 6 This is a top view showing a modified example of the number and arrangement of heat transfer gas supply holes 210 at the gas outlet portion 203. In this modified example, four heat transfer gas supply holes 210 are formed per gas outlet portion 203, and these holes are arranged at rotationally symmetrical positions when viewed from above the electrostatic chuck 121. The cross-sectional shape of the heat transfer gas supply holes 210 in this modified example, taken perpendicular to the flow direction of the heat transfer gas supply holes 210, is an ellipse. The diameter φ of the heat transfer gas supply holes 210 in this modified example is the shortest diameter of the ellipse in this cross-sectional shape.

[0107] In another variation, the cross-sectional shape of the heat transfer gas supply hole 210, perpendicular to the flow direction of the heat transfer gas supply hole 210, is slit-shaped. "Slit-shaped" refers to a shape containing one or more parallel straight lines or parallel curves, such as a square, rectangle, or rounded rectangle, or a shape obtained by replacing one of these sets of parallel straight lines with parallel curves. The diameter φ of the slit is the distance between two of these parallel straight lines or parallel curves. By making the cross-sectional shape of the heat transfer gas supply hole 210 slit-shaped, the electrical conductivity of the heat transfer gas can be improved while maintaining the effect of preventing or suppressing abnormal discharge.

[0108] Conductive component 124 is, for example, a conductive ceramic. Conductive ceramic is formed by, for example, mixing metal carbides into aluminum oxide (Al2O3) and sintering the mixture. Examples of metal carbides include tungsten carbide (WC), tantalum carbide (TaC), molybdenum carbide (MoC), silicon carbide (SiC), and titanium carbide (TiC). Furthermore, conductive component 124 is, for example, a metal.

[0109] By integrally molding the conductive member 124 and the dielectric member 122 , it is possible to suppress the mounting tolerance that may occur with embedded components in Patent Document 1 and the like, and to strictly design the dimension of the gap G between the substrate W and the electrostatic chuck 121 .

[0110] Furthermore, the conductive member 124 may be provided not only around the entire heat transfer gas supply hole 210 but also around a portion of the heat transfer gas supply hole 210 . Figures 7 to 9 FIG. 2 shows a modified example in which the conductive member 124 is provided around a portion of the heat transfer gas supply hole 210. Figure 7 As shown in FIG. 1 , the conductive member 124 may be disposed around the end portion of the heat transfer gas supply hole 210 on the support surface 121a side. Figure 8As shown in FIG. 1 , the conductive member 124 may be disposed around the end portion of the back surface 121b side of the heat transfer gas supply hole 210. Figure 9 As shown, the conductive member 124 may be arranged around the middle portion thereof, not around the end portions on the support surface 121 a side and the end portions on the back surface 121 b side of the heat transfer gas supply hole 210 .

[0111] In one embodiment, the heat transfer gas supplied from the heat transfer gas source 201 passes through the susceptor flow path 211 and the heat transfer gas supply holes 210 and reaches the gap G between the substrate W and the electrostatic chuck 121 .

[0112] In one embodiment, the conductive component 124 is provided so as to be divided into a plurality of parts in the circumferential direction and / or the vertical direction. In this case, the divided conductive components 124 are electrically connected through vias and wiring.

[0113] (Second embodiment)

[0114] Hereinafter, a configuration example of the main body portion 111 according to the second embodiment will be described. Figure 10 This is a partial cross-sectional view schematically illustrating an example structure of the main body 111 of the second embodiment. Descriptions of the structures of the main body 111 of the second embodiment that are identical to those of the first embodiment are omitted. Furthermore, the modified examples described in the first embodiment can also be employed in the second embodiment.

[0115] exist Figure 10 In the embodiment, a recess 220 having a larger diameter than each heat transfer gas supply hole 210 is formed at a position corresponding to the base flow path 211 of the electrostatic chuck 121. The recess 220 constitutes a portion of the back surface 121b of the support surface 121a. The heat transfer gas supply hole 210 extends from the support surface 121a to the back surface 121b at the recess 220. Thus, the heat transfer gas supply hole 210, the recess 220, and the base flow path 211 are connected, forming the heat transfer gas flow path 202 of the second embodiment. The diameter of the recess 220 may be the same as or different from that of the base flow path 211.

[0116] The conductive member 124 is disposed around the entire heat transfer gas supply hole 210. Figures 7 to 9 Similarly to the illustrated modification, the conductive member 124 may be disposed around the end portion of the heat transfer gas supply hole 210 on the support surface 121 a side, around the end portion on the back surface 121 b side, or around the middle portion. Figure 11 A modified example is shown in which the conductive member 124 is provided around the end portion on the back surface 121 b side of the heat transfer gas supply hole 210 .

[0117] The conductive component 124 is disposed around at least a portion of the recess 220, from the end communicating with the heat transfer gas supply hole 210 to the end communicating with the susceptor flow path 211. In this embodiment, the conductive component 124 is disposed around the end communicating with the heat transfer gas supply hole 210. In one embodiment, the conductive component 124 disposed around the heat transfer gas supply hole 210 and the conductive component 124 disposed around at least a portion of the recess 220 may be a single conductive component 124.

[0118] An embedded component 221 is provided in the heat transfer gas flow path 202 at the base flow path 211 and / or the recess 220. The embedded component 221 is formed of, for example, resin or ceramic. In addition, the embedded component 221 is provided so as to be separated from the inner wall of the base flow path 211 and / or the recess 220 and to fill the space within the base flow path 211 and / or the recess 220. As a result, the flow path cross-sectional area of the heat transfer gas flow path 202 is reduced. By utilizing the embedded component 221, the heat transfer gas flows, for example, in a narrow area between the embedded component 221 and the sleeve 212, thereby preventing or suppressing the occurrence of abnormal discharge in the base flow path 211. Moreover, the occurrence of abnormal discharge in the heat transfer gas supply hole 210 can be more effectively prevented or suppressed.

[0119] In one embodiment, an insulating layer 232 is formed on the inner wall of the recess 220 to cover at least the boundary 231 between the conductive member 124 and the dielectric member 122 . Figure 12 FIG. 2 shows a modified example in which an insulating layer 232 is formed to cover the boundary portion 231. Figure 12 In the illustrated variation, an insulating layer 232 is formed that covers the entire inner wall of the recess 220, including the boundary 231. The insulating layer 232 can be a coating formed of an insulating material applied to the inner wall of the recess 220, or a film of insulating material formed on the upper surface of the inner wall of the recess 220. The insulating layer 232 prevents the edge of the conductive component 124 at the boundary 231 from being exposed to the heat transfer gas flow path 202, thus preventing abrupt changes in the electric field around the boundary 231. This effectively prevents or suppresses abnormal discharge within the heat transfer gas supply hole 210 or the recess 220.

[0120] In one embodiment, a porous member 233 (porous member) is provided in the base flow channel 211 and / or the recessed portion 220 instead of or in addition to the embedded member 221 . Figure 13 、 Figure 14 FIG. 2 shows a modified example in which a porous member 233 is provided in the recess 220 instead of the embedded member 221. Figure 13 In the embodiment, the porous member 233 is arranged to contact the inner wall of the recess 220 and fill the space in the recess 220. Figure 14 In the embodiment, the electrostatic chuck 121 is provided with a recess 220 having a larger diameter than the base flow path 211 , and the porous member 233 is provided so as to contact the inner wall of the recess 220 and fill the space within the recess 220 .

[0121] Figure 15 This figure shows a modified example in which an embedded member 221 and a porous member 233 are provided in the base flow path 211 and the recess 220. The embedded member 221 is provided so as to be separated from the inner wall of the base flow path 211 and to fill the space within the base flow path 211. Furthermore, the porous member 233 is provided so as to be in contact with the inner wall of the recess 220 and to fill the space within the recess 220 and a portion of the space within the base flow path 211.

[0122] The porous member 233 is, for example, an open-porous body such as alumina (Al 2 O 3 ) or silicon carbide (SiC). The pore diameter of the porous member 233 is, for example, 300 μm or less.

[0123] By filling the space in the recess 220 with the porous member 233 , the space where abnormal discharge may occur can be reduced or eliminated, and the occurrence of abnormal discharge in the heat transfer gas supply hole 210 or the recess 220 can be more effectively prevented or suppressed.

[0124] Here, the diameter φ of the heat transfer gas supply hole 210 is the same as in the first embodiment, but in the second embodiment, the aspect ratio of the heat transfer gas supply hole 210 is preferably set to 7 or greater. The aspect ratio of the heat transfer gas supply hole 210 is the ratio (t / φ) of the thickness t of the electrostatic chuck 121 to the diameter φ of the heat transfer gas supply hole 210. The thickness t of the electrostatic chuck 121 refers to the distance from the support surface 121a to the back surface 121b of the electrostatic chuck 121, excluding the dot-shaped portions 121d. As an example, assuming that the support surface 121a is the substrate support surface and the thickness t of the electrostatic chuck 121 is 2.3 mm, the aspect ratio is 11.5 or greater. As another example, assuming that the support surface 121a is the ring support surface, the thickness t of the electrostatic chuck 121 is 1.4 mm, and the diameter φ of the heat transfer gas supply hole 210 is 0.2 μm, the aspect ratio is 7 or greater. By setting the aspect ratio of the heat transfer gas supply hole 210 to 7 or more, the occurrence of abnormal discharge in the heat transfer gas supply hole 210 or in the recess 220 can be more effectively prevented or suppressed.

[0125] In the second embodiment, the recess 220 is formed, so it is believed that the thickness t of the electrostatic chuck 121 is smaller than that of the first embodiment. Even in this case, by setting the aspect ratio to 7 or greater, it is possible to prevent or suppress the occurrence of abnormal discharge within the heat transfer gas supply hole 210 or within the recess 220.

[0126] (Third embodiment)

[0127] Hereinafter, a configuration example of the main body 111 according to the third embodiment will be described. Figure 16 It is a plan view schematically showing a configuration example of the main body 111 according to the third embodiment. Figure 17 The outline of the configuration example of the main body 111 of the first embodiment is shown in FIG. Figure 16 A partial cross-sectional view taken perpendicularly to the support surface 121a at position BB of the main body 111 of the third embodiment is shown. The description of the same structures as those described in the first or second embodiment will be omitted. Furthermore, the modified examples described in the first or second embodiment can also be adopted in the third embodiment.

[0128] exist Figure 16 and Figure 17 In the third embodiment, at least one distribution channel 240 is formed on the upper surface of the base 120 for the plurality of gas outlets 203. In this embodiment, as Figure 16 As shown, one distribution channel 240 is formed for each of the six gas outlet portions 203 arranged on two concentric circles. One distribution channel 240 is connected to at least one base channel 211. The distribution channel 240 is formed to extend in the in-plane direction of the upper surface of the base 120 in such a manner as to connect the base channel 211 with the end portions on the back surface 121b side of the plurality of heat transfer gas supply holes 210 and communicate them. In addition, as shown in FIG. Figure 17 As shown, a hole having the same diameter as the heat transfer gas supply hole 210 is formed in the adhesive layer 213 to connect and communicate the heat transfer gas supply hole 210 with the susceptor flow path 211. Thus, the heat transfer gas supply hole 210, the distribution flow path 240, and the susceptor flow path 211 are connected, forming the heat transfer gas flow path 202 of the third embodiment.

[0129] In the present embodiment, the distribution flow path 240 is formed to extend annularly in the in-plane direction of the base 120 , but the present invention is not limited thereto. For example, the distribution flow path 240 may be formed to extend radially and rotationally symmetrically with the center of the base 120 as the origin.

[0130] By providing distribution channel 240, multiple gas outlets 203 can be provided for a single susceptor channel 211, reducing the space where abnormal discharges can occur. Furthermore, the distance in the heat transfer gas channel 202, in the direction in which electrons are accelerated by the electric field generated by the main body 111, can be shortened, i.e., the distance in the thickness direction of the electrostatic chuck 121.

[0131] Figure 18This figure shows a modified example in which a porous member 241 is provided in the distribution channel 240. In this modified example, the porous member 241 is provided so as to contact the inner wall of the distribution channel 240 and fill the space within the distribution channel 240. By filling the space within the distribution channel 240 with the porous member 241, the space where abnormal discharge could occur can be reduced or eliminated, thereby more effectively preventing or suppressing the occurrence of abnormal discharge within the heat transfer gas supply holes 210 or the distribution channel 240.

[0132] (Fourth embodiment)

[0133] Hereinafter, a configuration example of the main body 111 according to the fourth embodiment will be described. Figure 19 It is a plan view schematically showing a configuration example of the main body 111 according to the third embodiment. Figure 20 The outline of the configuration example of the main body 111 of the first embodiment is shown in FIG. Figure 19 A partial cross-sectional view taken perpendicularly to the support surface 121a at the CC position of FIG. Furthermore, descriptions of the main body 111 of the third embodiment that are identical to those described in any of the first to third embodiments will be omitted. Furthermore, the modifications described in any of the first to third embodiments can also be adopted in the fourth embodiment.

[0134] exist Figure 19 and Figure 20 In the fourth embodiment, at least one distribution channel 250 is formed inside the electrostatic chuck 121 for each of the plurality of gas outlets 203. Figure 14 As shown, a distribution channel 250 is formed for each of the six gas outlet portions arranged on two concentric circles. Each distribution channel 250 is connected to at least one susceptor channel 211. The distribution channel 250 constitutes a portion of the back surface 121b of the support surface 121a. The heat transfer gas supply holes 210 extend from the support surface 121a to the back surface 121b at the distribution channel 250. The distribution channel 250 is formed to extend in the in-plane direction within the electrostatic chuck 121 so as to connect the susceptor channel 211 and the ends of the back surface 121b of the plurality of heat transfer gas supply holes 210, thereby connecting them. Thus, the heat transfer gas supply holes 210, the distribution channel 250, and the susceptor channel 211 are connected, and together they constitute the heat transfer gas channel 202 of the fourth embodiment.

[0135] By providing distribution channels 250, multiple gas outlets 203 can be provided for a single susceptor channel 211, reducing the space where abnormal discharges can occur. Furthermore, the distance in the heat transfer gas channel 202, in the direction in which electrons are accelerated by the electric field generated by the main body 111, is shortened, i.e., the distance in the thickness direction of the electrostatic chuck 121. This prevents or suppresses the occurrence of abnormal discharges.

[0136] Figure 21 A modified example is shown in which the conductive member 124 is disposed around at least a portion of the distribution flow path 250. In this modified example, the conductive member 124 is disposed around the distribution flow path 250 near the portion connected to the heat transfer gas supply hole 210. In one embodiment, the conductive member 124 disposed around at least a portion of the heat transfer gas supply hole 210 and the conductive member 124 disposed around at least a portion of the distribution flow path 250 may be a single conductive member 124. In one embodiment, the conductive member 124 is disposed around the entire inner wall of the distribution flow path 250.

[0137] Figure 22 This figure shows a modified example in which a porous member 251 is provided in the distribution channel 250. In this modified example, the porous member 251 is provided so as to contact the inner wall of the distribution channel 250 and fill the space within the distribution channel 250. Filling the space within the distribution channel 250 with the porous member 251 can reduce or eliminate the space where abnormal discharge may occur, thereby more effectively preventing or suppressing the occurrence of abnormal discharge within the heat transfer gas supply holes 210 or the distribution channel 250.

[0138] <Conductive Embedded Component>

[0139] (Fifth embodiment)

[0140] Hereinafter, a configuration example of the conductive embedded member 260 according to the fifth embodiment will be described. Figure 23 It is a plan view schematically showing a configuration example of a main body portion 111 including a conductive embedded member 260 according to the fifth embodiment. Figure 24 It is a plan view showing a structural example of a conductive embedded member 260 according to the fifth embodiment. Figure 25 The conductive embedded component 260 of the fifth embodiment is Figure 24 Cross-sectional view at the DD position. Figure 26 It is a partial cross-sectional view schematically showing a configuration example of a main body portion 111 including a conductive embedded member 260 according to the fifth embodiment.

[0141] exist Figure 23 In the electrostatic chuck 121 of the fifth embodiment, a hole penetrating from the support surface 121a of the electrostatic chuck 121 to the back surface 121b of the support surface 121a is provided in the gas outlet portion 203. A conductive embedded member 260 is embedded in the hole.

[0142] exist Figure 24 and Figure 25In the embodiment, the conductive embedded component 260 is a generally cylindrical component having an upper surface 260a, a lower surface 260b, and side surfaces 260c. The conductive embedded component 260 has a vertical hole 261 or a horizontal hole 262. The vertical hole 261 includes a hole extending from the upper surface 260a to the lower surface 260b, and a hole extending from the upper surface 260a to the horizontal hole 262. The horizontal hole 262 connects the plurality of vertical holes 261 within the conductive embedded component 260.

[0143] exist Figure 26 In the fifth embodiment, the conductive embedded member 260 is embedded in a hole provided in the electrostatic chuck 121, thereby achieving at least the same effects as the conductive member 124 and the heat transfer gas supply holes 210 provided around the conductive member 124 described in the first to fourth embodiments. Specifically, the base of the conductive embedded member 260 functions as the conductive member 124, and the vertical holes 261 and horizontal holes 262 function as the heat transfer gas supply holes 210 by connecting the gap G between the substrate W and the electrostatic chuck 121 to the susceptor flow path 211.

[0144] From this perspective, the conductive embedded member 260 has the same structure as the conductive member 124 and the heat transfer gas supply holes 210 provided around the conductive member 124 described in the first to fourth embodiments. Specifically, the conductive embedded member 260, like the conductive member 124, is made of, for example, conductive ceramic. Conductive ceramic is formed, for example, by mixing metal carbides into aluminum oxide (Al2O3) and sintering the mixture. Examples of metal carbides include tungsten carbide (WC), tantalum carbide (TaC), molybdenum carbide (MoC), silicon carbide (SiC), and titanium carbide (TiC).

[0145] Furthermore, the diameter φ of the vertical hole 261 and the horizontal hole 262 is 0.5 mm or less, and in one embodiment, 0.2 mm or less.

[0146] In one embodiment, the conductive embedded component 260 forms a recess or distribution flow path that is the same as part or all of the recess 220 or the distribution flow path 250, and has the same effect as the recess 220 or the distribution flow path 250 with the conductive component 124 arranged around it in the second to fourth embodiments.

[0147] Figure 27 and Figure 28 A modified example of the conductive embedded member 260 is shown. Figure 27 It is a plan view showing a modified example of the conductive embedded member 260 . Figure 28 The conductive embedded component 260 is Figure 27EE position. In this modification, an inclined hole 270 is formed instead of the vertical hole 261 and the horizontal hole 262. The inclined hole 270 is formed so that the flow path axis L is inclined relative to the upper surface 260a or the lower surface 260b at a required angle. In addition, the cross-sectional shape of the inclined hole 270 in the direction perpendicular to the flow path axis L is approximately circular. In this case, the diameter φ of the inclined hole 270 is the diameter of the circle in the cross section in the direction perpendicular to the flow path axis L. The diameter φ of the inclined hole 270 is 0.5 mm or less, and in one embodiment, it is 0.2 mm or less. In one embodiment, a plurality of inclined holes 270 are provided.

[0148] Figure 29 and Figure 30 Another modified example of the conductive embedded member 260 is shown. Figure 29 It is a plan view showing another modified example of the conductive embedded member 260 . Figure 30 It is from Figure 29 A side view of the conductive embedded component 260 as viewed from the FF direction. In this modified example, a spiral groove 280 is formed instead of the vertical hole 261 and the horizontal hole 262. The spiral groove 280 is formed in a spiral shape by digging a groove in the side surface 260c from one point at the outer peripheral end of the upper surface 260a through the side surface 260c to one point at the outer peripheral end of the lower surface 260b. By embedding the conductive embedded component 260 having the spiral groove 280 in a hole that passes through from the support surface 121a of the electrostatic chuck 121 to the back surface 121b of the support surface 121a, the inner surface of the hole is in close contact with the side surface 260c of the conductive embedded component 260. As a result, the inner surface of the hole and the spiral groove 280 form the heat transfer gas supply hole 210. The diameter φ of the spiral groove 280 is the groove width. The diameter φ of the spiral groove 280 is 0.5 mm or less, and in one embodiment, it is 0.2 mm or less. In one embodiment, a plurality of spiral grooves 280 are provided.

[0149] According to the conductive embedded component 260 of the fifth embodiment, the portion of the electrostatic chuck 121 corresponding to the conductive component 124 can be processed and manufactured as an independent component. In the processing of the conductive embedded component 260, the design freedom of the shape and angle of the hole is higher than that of the conductive component 124 formed integrally with the electrostatic chuck 121. Thus, the hole (vertical hole 261, horizontal hole 262, inclined hole 270 or spiral groove 280) can be formed in a manner such that the distance in the direction in which the electrons are accelerated by the electric field generated by the main body 111, that is, the distance in the thickness direction of the electrostatic chuck 121 becomes shorter. Thus, the occurrence of abnormal discharge in the heat transfer gas supply hole 210 can be more effectively prevented or suppressed. In addition, since the size of the embedded component is small, the difficulty of construction is low, which can also reduce the manufacturing cost.

[0150] <Electrical Connection between Conductive Component and Base>

[0151] (Sixth embodiment)

[0152] Hereinafter, a configuration example of the main body 111 according to the sixth embodiment will be described. Figure 31 This is a partial cross-sectional view schematically illustrating an example structure of the main body 111 of the sixth embodiment. In the following description, the conductive embedded member 260 of the fifth embodiment is included in the conductive member 124. Descriptions of the main body 111 of the sixth embodiment that are identical to those described in the first through fifth embodiments will be omitted. Furthermore, the modifications described in the first through fifth embodiments can also be employed in the sixth embodiment.

[0153] The main body 111 of the sixth embodiment includes a short-circuit component 300. The short-circuit component 300 is a conductive component that connects the base 120 and the electrostatic chuck 121. The short-circuit component 300 includes a horizontal portion 300a and a vertical portion 300b. The horizontal portion 300a is electrically connected to at least one location on the side conductive portion 24. Furthermore, the vertical portion 300b is electrically connected to the horizontal portion 300a and the base 120.

[0154] The conductive component 124 is electrically connected to the base 120 by the short-circuit component 300. In this embodiment, the conductive component 124 and the base 120 are short-circuited by the short-circuit component 300, and the conductive component 124 and the base 120 are at the same potential. This creates an electric field-free space within the base flow path 211 and the recess 220, and can more effectively prevent or suppress the occurrence of abnormal discharge within the base flow path 211 and the recess 220.

[0155] From this point of view, in one embodiment, the base flow path 211 and the heat transfer gas flow path 202 of the recess 220 are formed to be thinner than in the prior art. For example, the base flow path 211 and the recess 220 have the same diameter, which is 4.0 mm or less. Thus, while preventing or suppressing the occurrence of abnormal discharge by the above-mentioned electric field-free space, the generation of temperature singularities of the substrate W and / or the edge ring during plasma processing can be suppressed or prevented. In addition, in one embodiment, the structure is such that the buried component 221 for filling the space of the base flow path 211 and the heat transfer gas flow path 202 of the recess 220 is not provided. In addition, in one embodiment, the structure is such that the sleeve 212 is not provided in the base flow path 211. Thus, while maintaining the effect of preventing or suppressing the occurrence of abnormal discharge by the above-mentioned electric field-free space, the manufacturing cost can be incidentally reduced.

[0156] In one embodiment, the horizontal portion 300a of the short-circuit component 300 can be connected to multiple locations. In addition, the short-circuit component 300 can be connected in a manner that the horizontal portion 300a surrounds the entire periphery of the conductive component 124. In addition, the horizontal portion 300a can be connected to a portion of the periphery of the conductive component 124. In addition, the horizontal portion 300a can be arranged at any height as long as it is connected to the conductive component 124. Moreover, the horizontal portion 300a may be connected to the conductive component 124 arranged around the heat transfer gas supply hole 210 instead of being connected to the conductive component 124 arranged around the recess 220. In this case, it is possible to avoid the electrostatic electrode and / or RF / DC electrode arranged in the electrostatic chuck 121 for arrangement. In addition, the horizontal portion 300a may be connected to the conductive component 124 arranged around the distribution flow path 250 instead of being connected to the conductive component 124 arranged around the recess 220.

[0157] The short-circuit member 300 of this embodiment includes a horizontal portion 300 a and a vertical portion 300 b , but may have any shape as long as it can achieve a short circuit between the conductive member 124 and the base 120 .

[0158] (Seventh embodiment)

[0159] Hereinafter, a configuration example of the main body 111 according to the seventh embodiment will be described. Figure 32 1 is a partial cross-sectional view showing an outline of a configuration example of the main body 111 according to the seventh embodiment. Figure 32 In the embodiment, adhesive layer 213 includes short-circuit adhesive layer 310. The end of conductive component 124 on the adhesive layer 213 side is short-circuited to base 120 via short-circuit adhesive layer 310. Short-circuit adhesive layer 310 may be, for example, a conductive adhesive or metal solder. This allows short-circuiting between conductive component 124 and base 120 without using short-circuit component 300.

[0160] (Eighth Embodiment)

[0161] Hereinafter, a configuration example of the main body 111 according to the eighth embodiment will be described. Figure 33 1 is a partial cross-sectional view showing an outline of a configuration example of the main body 111 according to the eighth embodiment. Figure 33In the embodiment, the conductive component 124 is short-circuited with the base 120 via the electrode layer 320, the guide hole 321 and the bonding component 322. The bonding component 322 is, for example, a conductive adhesive or metal solder. The bonding component 322 is arranged in the through hole 323. The bonding component 322 can be of any shape as long as it can be electrically connected with the electrode layer 320, the guide hole 321 and the base 120. In addition, the electrode layer 320 can be used as any of an electrostatic electrode, an RF / DC electrode and a heater electrode within the range that does not impair the function. In one embodiment, the through hole 323 and the bonding component 322 are arranged near the center of the base 120 in a manner that minimizes the influence of the thermal expansion difference between the base 120 and the electrostatic chuck 121.

[0162] (Ninth embodiment)

[0163] Hereinafter, a configuration example of the main body 111 according to the ninth embodiment will be described. Figure 34 1 is a partial cross-sectional view showing an outline of a configuration example of the main body 111 according to the ninth embodiment. Figure 34 In the embodiment, conductive component 124 is short-circuited to base 120 via electrode layer 320, guide hole 321, and a fixing pin assembly. The fixing pin assembly includes a fitting portion 331, a pin inserted into through-hole 323 and including a pin elastic portion 332, a pin shaft 333, and a pin head 334, and an elastic connecting portion 335. Furthermore, electrode layer 320 can function as an electrostatic electrode, an RF / DC electrode, or a heater electrode, as long as its functionality is not compromised.

[0164] The fitting portion 331, the pin elastic portion 332, the pin shaft 333, the pin head 334, and the elastic connection portion 335 are all formed of conductive materials and are electrically connected to each other. The pin head 334 is electrically connected to the base 120 via the elastic connection portion 335. The fitting portion 331 is electrically connected to the guide hole 321.

[0165] Thus, the conductive component 124 is short-circuited to the base 120 via the electrode layer 320, the guide hole 321, and the fixing pin assembly. Alternatively, the pin elastic portion 332 and / or the elastic connection portion 335 may be a desired conductive component such as a leaf spring, a disc spring, or a coil spring that elastically connects the pin head 334 to the base 120.

[0166] Figure 35 FIG. 1 shows a modified example of the main body 111 of the ninth embodiment. Figure 35In the modified example shown, the base 120 has a recess 341 formed on the lower surface side of the base 120 in the through hole 323. The pin head 334 engages with the recess 341. A pin elastic connection portion 342 is provided on the pin shaft 333. The pin elastic connection portion 342 is formed by a conductive component and is electrically conductive with other components of the fixed pin assembly. The pin elastic connection portion 342 contacts the base 120 and electrically connects the pin shaft 333 to the base 120. As a result, the conductive component 124 is short-circuited to the base 120 via the electrode layer 320, the guide hole 321 and the fixed pin assembly. In addition, the pin elastic connection portion 342 can also be a conductive component required to elastically connect the pin shaft 333 to the base 120, such as a leaf spring, a disc spring or a coil spring.

[0167] (Tenth embodiment)

[0168] The following describes an example structure of the main body 111 according to the tenth embodiment. In the main body 111 according to the tenth embodiment, the conductive component 124 is connected to an electrode layer provided inside the electrostatic chuck 121. The electrode layer and the conductive base 120a of the susceptor 120 are each connected to, for example, a power source 30. Furthermore, the control unit 2 controls the electrode layer and the conductive base 120a to be at the same potential, for example. As a result, the conductive component 124 connected to the electrode layer and the susceptor 120 are at the same potential, forming an electric field-free space within the heat transfer gas supply hole 210 and the susceptor flow path 211 around which the conductive component 124 is arranged. This makes it possible to more effectively prevent or suppress the occurrence of abnormal discharge within the heat transfer gas supply hole 210 and the susceptor flow path 211.

[0169] <Method for Forming Heat Transfer Gas Supply Holes>

[0170] As an example, the heat transfer gas supply holes 210 in the first to ninth embodiments can be formed by water laser machining (also referred to as water jet laser machining or water beam laser machining).

[0171] In water-conducting laser machining, a jet of water or liquid is emitted toward the conductive component 124 or the conductive embedded component 260 in the electrostatic chuck 121. The laser beam is then guided while being confined within the jet using the principle of optical fiber. Laser machining is then performed at the end of the jet, and the jet cools the machined hole, discharging machining chips.

[0172] Conventionally, methods for machining the heat transfer gas flow path 202 of electrostatic chucks 121 and the like have been known to involve machining centers (MC), water jet machining, and electrical discharge machining. MC and water jet machining are incapable of machining holes with a high aspect ratio above a certain level, and tend to result in a tapered shape. Furthermore, electrical discharge machining has the disadvantage of significantly increasing machining time. Furthermore, "water jet machining" differs from water-guided laser machining by simply spraying high-pressure water onto the object.

[0173] In contrast, water-conducting laser processing can form holes with a high aspect ratio in a short period of time, enabling the heat transfer gas supply hole 210 to have a diameter φ of 0.5 mm or less. Furthermore, water-conducting laser processing can achieve the preferred configuration of heat transfer gas supply hole 210, with a diameter φ of 0.2 mm or less and an aspect ratio of 7 or greater. For example, water-conducting laser processing can be performed using the "Luminizer LB300 / LB500" laser processing machine manufactured by Makino Milling Cutter Co., Ltd. ("Makino Milling Cutter Co., Ltd." and "Luminizer" are registered trademarks).

[0174] <Other Implementation Methods>

[0175] In the above-described embodiment of the present disclosure, a main body 111 of a substrate support 11 is provided. By providing a conductive component 124 at least around the heat transfer gas supply hole 210, abnormal discharge can be prevented or suppressed from occurring in at least a portion of the heat transfer gas supply hole 210. Furthermore, even when the conductive component 124 is not provided around the heat transfer gas supply hole 210, the occurrence of abnormal discharge can be prevented or suppressed by setting the diameter φ of the heat transfer gas supply hole 210 to be less than 0.2 mm and the aspect ratio to be greater than 7. Below, an embodiment of the main body 111 having a structure without the conductive component 124 around the heat transfer gas supply hole 210 will be described. In the following embodiments, descriptions of structures identical to those described in the above-described embodiments will be omitted.

[0176] (Eleventh embodiment)

[0177] Figure 36 It is a plan view schematically showing a configuration example of the main body 111 according to the eleventh embodiment. Figure 37 The outline of the structural example of the main body 111 of the eleventh embodiment is shown in Figure 36 A partial cross-sectional view taken perpendicularly to the support surface 121a at the PP position.

[0178] In the eleventh embodiment, heat transfer gas supply holes 210 are formed in the dielectric member 122 at the gas outlet portion 203. The structure is the same as that of the main body 111 of the first embodiment, except that the conductive member 124 is not provided around the heat transfer gas supply holes 210.

[0179] According to the main body 111 of the eleventh embodiment, the heat transfer gas supply hole 210 has a diameter φ of 0.2 mm or less and an aspect ratio of 7 or more, thereby preventing or suppressing the occurrence of abnormal discharge.

[0180] (Twelfth embodiment)

[0181] Figure 38 This is a partial cross-sectional view schematically illustrating an example structure of the main body 111 of the twelfth embodiment. In the twelfth embodiment, heat transfer gas supply holes 210 are formed in the dielectric member 122 at the gas outlet 203. The main body 111 has the same structure as the second embodiment, except that the conductive member 124 is not provided around the heat transfer gas supply holes 210.

[0182] The main body 111 of the twelfth embodiment prevents or suppresses abnormal discharge by setting the diameter φ of the heat transfer gas supply hole 210 to 0.2 mm or less and the aspect ratio to 7 or greater. Furthermore, the embedded component 221 reduces the cross-sectional area of the heat transfer gas flow path 202. This allows the heat transfer gas to flow through the narrow area between the embedded component 221 and the sleeve 212, for example. This prevents or suppresses abnormal discharge within the heat transfer gas supply hole 210 and / or the base flow path 211.

[0183] Figures 39 to 42 This is a partial cross-sectional view showing an outline of a structural example of the main body 111 of a modified example of the twelfth embodiment. In the modified example of the twelfth embodiment, the heat transfer gas supply hole 210 is formed in the dielectric member 122 at the gas outlet portion 203. In addition, except that the conductive member 124 is not provided around the heat transfer gas supply hole 210, the present invention has the same structure as that used in the modified example of the second embodiment. Figures 13 to 15 The main body 111 of the embodiment described above has the same structure.

[0184] In the main body 111 of the modified example of the twelfth embodiment, by setting the diameter φ of the heat transfer gas supply hole 210 to 0.2 mm or less and the aspect ratio to 7 or greater, the occurrence of abnormal discharge can be prevented or suppressed. Furthermore, by filling the space within the recess 220 with the porous member 233, the space where abnormal discharge could occur can be reduced or eliminated, thereby more effectively preventing or suppressing the occurrence of abnormal discharge within the heat transfer gas supply hole 210 or the recess 220.

[0185] (Thirteenth embodiment)

[0186] Figure 43 It is a plan view schematically showing a configuration example of a main body portion 111 according to a thirteenth embodiment. Figure 44 The outline of the structural example of the main body 111 of the thirteenth embodiment is shown in Figure 43 A partial cross-sectional view taken perpendicularly to the support surface 121a at the QQ position. Figure 45 It is a partial cross-sectional view schematically showing a configuration example of a main body portion 111 according to a modification of the thirteenth embodiment.

[0187] In the thirteenth embodiment, the heat transfer gas supply hole 210 is formed in the dielectric member 122 at the gas outlet portion 203. In addition, the conductive member 124 is not provided around the heat transfer gas supply hole 210. The main body 111 of the third embodiment or the modified example of the third embodiment is provided. Figure 18 The main body 111 of the embodiment described above has the same structure.

[0188] By utilizing the main body 111 of the thirteenth embodiment, by making the diameter φ of the heat transfer gas supply hole 210 less than 0.2 mm and the aspect ratio greater than 7, the occurrence of abnormal discharge can be prevented or suppressed. In addition, by providing a distribution flow path 240, a plurality of gas outlet portions 203 can be provided for one base flow path 211, and the space where abnormal discharge can occur can be reduced. In addition, in the heat transfer gas flow path 202, the distance in the direction in which electrons are accelerated by the electric field generated by the main body 111, that is, in the thickness direction of the electrostatic chuck 121, can be shortened. Thus, the occurrence of abnormal discharge can be prevented or suppressed. In addition, in Figure 45 In the modified example shown, the space within the distribution flow path 240 is filled with the porous component 233, which can reduce or eliminate the space where abnormal discharge may occur, and can more effectively prevent or suppress the occurrence of abnormal discharge within the heat transfer gas supply hole 210 or the distribution flow path 240.

[0189] (Fourteenth embodiment)

[0190] Figure 46 It is a plan view schematically showing a configuration example of the main body 111 according to the fourteenth embodiment. Figure 47 The outline of the structural example of the main body 111 of the fourteenth embodiment is shown in Figure 46 A partial cross-sectional view taken perpendicularly to the support surface 121a at the RR position. Figure 48 It is a partial cross-sectional view schematically showing a configuration example of a main body portion 111 according to a modification of the fourteenth embodiment.

[0191] In the fourteenth embodiment, the heat transfer gas supply hole 210 is formed in the dielectric member 122 at the gas outlet portion 203. In addition, the conductive member 124 is not provided around the heat transfer gas supply hole 210. The main body 111 of the fourth embodiment or the modified example of the fourth embodiment is provided. Figure 22 The main body 111 of the embodiment described above has the same structure.

[0192] By utilizing the main body 111 of the fourteenth embodiment, by making the diameter φ of the heat transfer gas supply hole 210 less than 0.2 mm and the aspect ratio greater than 7, the occurrence of abnormal discharge can be prevented or suppressed. In addition, by providing a distribution flow path 250, a plurality of gas outlet portions 203 can be provided for one base flow path 211, and the space where abnormal discharge can occur can be reduced. In addition, in the heat transfer gas flow path 202, the distance in the direction in which electrons are accelerated by the electric field generated by the main body 111, that is, in the thickness direction of the electrostatic chuck 121, can be shortened. Thus, the occurrence of abnormal discharge can be prevented or suppressed. In addition, in Figure 48 In the variation shown, the porous component 251 fills the space in the distribution flow path 250, which can reduce or eliminate the space where abnormal discharge may occur, and can more effectively prevent or suppress the occurrence of abnormal discharge in the heat transfer gas supply hole 210 or the distribution flow path 250.

[0193] (Fifteenth embodiment)

[0194] Figure 49 It is a plan view schematically showing a configuration example of a main body portion 111 including an embedded member 400 according to a fifteenth embodiment. Figure 50 It is a plan view showing a structural example of an embedding member 400 according to a fifteenth embodiment. Figure 51 The embedded component 400 of the fifteenth embodiment is Figure 50 Cross-sectional view at the SS position. Figure 52 This is a partial cross-sectional view schematically showing a configuration example of a main body 111 including an embedded member 400 according to a fifteenth embodiment. The fifteenth embodiment has the same configuration as the main body 111 of the fifth embodiment, except that the embedded member 400 is not conductive.

[0195] exist Figure 49 In the electrostatic chuck 121 of the fifteenth embodiment, a hole penetrating from the support surface 121a of the electrostatic chuck 121 to the back surface 121b of the support surface 121a is provided in the gas outlet portion 203. An embedded member 400 is embedded in the hole.

[0196] exist Figure 50 and Figure 51In the embodiment, embedded component 400 is a generally cylindrical component having an upper surface 400a, a lower surface 400b, and a side surface 400c. Embedded component 400 has a vertical hole 401 or a horizontal hole 402. Vertical holes 401 include holes that extend from upper surface 400a to lower surface 400b, and holes that extend from upper surface 400a to horizontal holes 402. Horizontal holes 402 connect the multiple vertical holes 401 within embedded component 400.

[0197] exist Figure 52 In the fifteenth embodiment, the embedded component 400 is embedded in a hole provided in the electrostatic chuck 121, thereby achieving at least the same functions and effects as the heat transfer gas supply hole 210 described in the eleventh through fourteenth embodiments. Specifically, the vertical hole 401 and the horizontal hole 402 function as the heat transfer gas supply hole 210 by connecting the gap G between the substrate W and the electrostatic chuck 121 to the susceptor flow path 211. From this perspective, the diameter φ of the vertical hole 401 and the horizontal hole 402 is 0.2 mm or less, similar to the heat transfer gas supply hole 210 in the eleventh through fourteenth embodiments. Furthermore, the aspect ratio is 7 or greater.

[0198] In one embodiment, a recess or distribution channel similar to a portion or all of the recess 220 or the distribution channel 250 is formed in the embedded member 400 , and has the same functions and effects as the recess 220 or the distribution channel 250 in the twelfth to fourteenth embodiments.

[0199] In one embodiment, the embedded member 400 is formed of, for example, insulating ceramics.

[0200] Figure 53 and Figure 54 A modified example of the embedded member 400 is shown. Figure 53 It is a plan view showing a modified example of the embedded member 400 . Figure 54 The embedded component 400 is Figure 53 TT position. In this modification, an inclined hole 410 is formed instead of the vertical hole 401 and the horizontal hole 402. The inclined hole 410 is formed so that the flow path axis L is inclined relative to the upper surface 400a or the lower surface 400b at a required angle. In addition, the cross-sectional shape of the inclined hole 410 in a direction perpendicular to the flow path axis L is approximately circular. In this case, the diameter φ of the inclined hole 410 is the diameter of the circle in the cross section in the direction perpendicular to the flow path axis L. The diameter φ of the inclined hole 410 is 0.5 mm or less, and in one embodiment, it is 0.2 mm or less. In one embodiment, a plurality of inclined holes 410 are provided.

[0201] Figure 55 and Figure 56 Another modified example of the embedded member 400 is shown. Figure 55It is a plan view showing another modified example of the embedding member 400 . Figure 56 It is from Figure 55 A side view of the embedded component 400 as viewed from the FF direction. In this modified example, a spiral groove 420 is formed instead of the vertical hole 401 and the horizontal hole 402. The spiral groove 420 is formed in a spiral shape by digging a groove in the side surface 400c from one point at the outer peripheral end of the upper surface 400a through the side surface 400c to one point at the outer peripheral end of the lower surface 400b. By embedding the embedded component 400 having the spiral groove 420 in a hole that passes from the support surface 121a of the electrostatic chuck 121 to the back surface 121b of the support surface 121a, the inner surface of the hole is in close contact with the side surface 400c of the embedded component 400. As a result, the inner surface of the hole and the spiral groove 420 form the heat transfer gas supply hole 210. The diameter φ of the spiral groove 420 is the groove width. The diameter φ of the spiral groove 420 is 0.5 mm or less, and in one embodiment, it is 0.2 mm or less. In one embodiment, a plurality of spiral grooves 420 are provided.

[0202] According to the embedded component 400 of the fifteenth embodiment, the gas outlet portion 203 provided in the dielectric component 122 of the electrostatic chuck 121 can be processed and manufactured as an independent component. When processing the embedded component 400, there is greater freedom in designing the shape and angle of the holes compared to directly processing the dielectric component 122 of the electrostatic chuck 121. As a result, the holes (vertical holes 401, horizontal holes 402, inclined holes 410, or spiral grooves 420) can be formed so that the distance in the direction in which electrons are accelerated by the electric field generated by the main body 111, i.e., the thickness direction of the electrostatic chuck 121, is shortened. This more effectively prevents or suppresses the occurrence of abnormal discharge within the heat transfer gas supply hole 210. Furthermore, the embedded component's small size reduces the difficulty of construction, which can also reduce manufacturing costs compared to the main body 111 of the eleventh to fourteenth embodiments.

[0203] It should be understood that the embodiments disclosed herein are illustrative in all respects and are not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the claimed technical solution and its main purpose. For example, the constituent elements of the above embodiments may be arbitrarily combined. According to such arbitrary combination, the functions and effects of the various constituent elements involved in the combination can of course be obtained, and other functions and effects that are obvious to those skilled in the art can be obtained based on the description of this specification.

[0204] In addition, the effects described in this specification are merely illustrative or exemplary and are not limited thereto. That is, the technology disclosed herein can produce other effects that are obvious to those skilled in the art based on the description of this specification in addition to or instead of the above-mentioned effects.

[0205] In addition, the following structural examples also belong to the technical scope of the present disclosure.

[0206] (1) A plasma processing apparatus comprising:

[0207] plasma processing chamber;

[0208] a susceptor disposed within the plasma processing chamber; and

[0209] an electrostatic chuck disposed on the upper surface of the base and having a supporting surface for supporting at least one of the substrate and the ring assembly;

[0210] Wherein, the electrostatic chuck includes at least one conductive component,

[0211] The electrostatic chuck is provided with at least one heat transfer gas supply hole having a diameter of 0.2 mm or less and extending from the support surface to the back surface of the support surface.

[0212] At least one of the conductive members is disposed around at least a portion of the heat transfer gas supply hole.

[0213] (2) The plasma processing apparatus according to (1) above, wherein:

[0214] A base flow path communicating with the heat transfer gas supply hole is formed on the base, and a recessed portion having a larger diameter than the heat transfer gas supply hole is formed at a position corresponding to the base flow path on the electrostatic chuck.

[0215] The heat transfer gas supply hole penetrates from the support surface to the back surface of the recessed portion.

[0216] (3) The plasma processing apparatus according to (2) above, wherein:

[0217] The invention includes at least one embedded member disposed in at least one of the base flow path and the recess.

[0218] (4) The plasma processing apparatus according to (3) above, wherein:

[0219] At least one of the embedded members has a porous structure.

[0220] (5) The plasma processing apparatus according to (4) above, wherein:

[0221] At least one of the conductive members is disposed around at least a portion of the recess.

[0222] (6) The plasma processing apparatus according to (5) above, wherein:

[0223] The conductive member disposed around the recess has an insulating layer constituting an inner wall around the recess.

[0224] (7) The plasma processing apparatus according to (1) above, wherein:

[0225] The base is formed with:

[0226] a base flow path communicating with the heat transfer gas supply hole; and

[0227] A distribution flow path connects the susceptor flow path and the end portions on the back side of the plurality of heat transfer gas supply holes to communicate with each other, and extends in an in-plane direction of the upper surface of the susceptor.

[0228] (8) The plasma processing apparatus according to (7) above, wherein:

[0229] The invention includes at least one embedded component arranged in at least one of the base flow path and the distribution flow path.

[0230] (9) The plasma processing apparatus according to (8) above, wherein:

[0231] At least one of the embedded members has a porous structure.

[0232] (10) The plasma processing apparatus according to (1) above, wherein:

[0233] A susceptor flow path communicating with the heat transfer gas supply hole is formed on the susceptor.

[0234] A distribution flow path is formed in the electrostatic chuck, the distribution flow path connecting the base flow path and the ends of the plurality of heat transfer gas supply holes on the back side so as to communicate with each other, and extending in the in-plane direction of the electrostatic chuck.

[0235] The heat transfer gas supply hole penetrates from the support surface to the back surface at the distribution flow path.

[0236] (11) The plasma processing apparatus according to (10) above, wherein:

[0237] The invention includes an embedded component arranged in at least one of the base flow path and the distribution flow path.

[0238] (12) The plasma processing apparatus according to (11) above, wherein:

[0239] The embedded member has a porous structure.

[0240] (13) The plasma processing apparatus according to any one of (10) to (12) above, wherein:

[0241] At least one of the conductive members is disposed around the heat transfer gas supply holes in the distribution flow path.

[0242] (14) The plasma processing apparatus according to any one of (10) to (13) above, wherein:

[0243] At least one of the conductive members is disposed around the entire distribution flow path.

[0244] (15) The plasma processing apparatus according to any one of (1) to (9), wherein:

[0245] At least one of the conductive members is disposed around an end portion of the heat transfer gas supply hole on the support surface side.

[0246] (16) The plasma processing apparatus according to any one of (1) to (9), wherein:

[0247] At least one of the conductive members is disposed around an end portion of the heat transfer gas supply hole on the back side.

[0248] (17) The plasma processing apparatus according to any one of (1) to (16) above, wherein:

[0249] The heat transfer gas supply hole has an elliptical, square, or slit-shaped cross-section with a diameter of 0.2 mm or less.

[0250] (18) The plasma processing apparatus according to (17) above, wherein:

[0251] An aspect ratio of the diameter of the cross-sectional shape of the heat transfer gas supply hole to the thickness of the electrostatic chuck is 7 or greater.

[0252] (19) The plasma processing apparatus according to any one of (1) to (18), wherein:

[0253] The conductive component is electrically connected to the base.

[0254] (20) A substrate support portion that supports at least one of a substrate and a ring assembly within a plasma processing chamber, wherein:

[0255] including an electrostatic chuck having a support surface for supporting at least one of the substrate and the ring assembly,

[0256] The electrostatic chuck includes at least one conductive component,

[0257] The electrostatic chuck is provided with at least one heat transfer gas supply hole having a diameter of 0.2 mm or less and extending from the support surface to the back surface of the support surface.

[0258] At least one of the conductive members is disposed around at least a portion of the heat transfer gas supply hole.

[0259] (21) The substrate support portion according to (20) above, wherein:

[0260] comprising a base, wherein the electrostatic chuck is arranged on the upper surface of the base,

[0261] A base flow path communicating with the heat transfer gas supply hole is formed on the base, and a recessed portion having a larger diameter than the heat transfer gas supply hole is formed at a position corresponding to the base flow path on the electrostatic chuck.

[0262] The heat transfer gas supply hole penetrates from the support surface to the back surface of the recessed portion.

[0263] (22) The substrate support portion according to (21) above, wherein:

[0264] The invention includes at least one embedded member disposed in at least one of the base flow path and the recess.

[0265] (23) The substrate support portion according to (22) above, wherein:

[0266] At least one of the embedded members has a porous structure.

[0267] (24) The substrate support portion according to (23) above, wherein:

[0268] At least one of the conductive members is disposed around at least a portion of the recess.

[0269] (25) The substrate support portion according to (24) above, wherein:

[0270] The conductive member disposed around the recess has an insulating layer constituting an inner wall around the recess.

[0271] (26) The substrate support portion according to (20) above, wherein:

[0272] The base is formed with:

[0273] a base flow path communicating with the heat transfer gas supply hole; and

[0274] A distribution flow path connects the susceptor flow path and the end portions on the back side of the plurality of heat transfer gas supply holes to communicate with each other, and extends in an in-plane direction of the upper surface of the susceptor.

[0275] (27) The substrate support portion according to (26) above, wherein:

[0276] The invention includes at least one embedded component arranged in at least one of the base flow path and the distribution flow path.

[0277] (28) The substrate support portion according to (27) above, wherein:

[0278] At least one of the embedded members has a porous structure.

[0279] (29) The substrate support portion according to (20) above, wherein:

[0280] A susceptor flow path communicating with the heat transfer gas supply hole is formed on the susceptor.

[0281] A distribution flow path is formed in the electrostatic chuck, the distribution flow path connecting the base flow path and the ends of the plurality of heat transfer gas supply holes on the back side so as to communicate with each other, and extending in the in-plane direction of the electrostatic chuck.

[0282] The heat transfer gas supply hole penetrates from the support surface to the back surface at the distribution flow path.

[0283] (30) The substrate support portion according to (29) above, wherein:

[0284] The invention includes an embedded component arranged in at least one of the base flow path and the distribution flow path.

[0285] (31) The substrate support portion according to (30) above, wherein:

[0286] The embedded member has a porous structure.

[0287] (32) The substrate support portion according to any one of (29) to (31) above, wherein:

[0288] At least one of the conductive members is disposed around the heat transfer gas supply holes in the distribution flow path.

[0289] (33) The substrate support portion according to any one of (29) to (31) above, wherein:

[0290] At least one of the conductive members is disposed around the entire distribution flow path.

[0291] (34) The substrate support portion according to any one of (20) to (28), wherein:

[0292] At least one of the conductive members is disposed around an end portion of the heat transfer gas supply hole on the support surface side.

[0293] (35) The substrate support portion according to any one of (20) to (28), wherein:

[0294] At least one of the conductive members is disposed around an end portion of the heat transfer gas supply hole on the back side.

[0295] (36) The substrate support portion according to any one of (20) to (35), wherein:

[0296] The heat transfer gas supply hole has an elliptical, square, or slit-shaped cross-section with a diameter of 0.2 mm or less.

[0297] (37) The substrate support portion according to (36) above, wherein:

[0298] An aspect ratio of the diameter of the cross-sectional shape of the heat transfer gas supply hole to the thickness of the electrostatic chuck is 7 or greater.

[0299] (38) The substrate support portion according to any one of (20) to (37), wherein:

[0300] The conductive component is electrically connected to the base.

[0301] Description of Reference Numerals

[0302] W substrate

[0303] 1. Substrate processing device

[0304] 10 Plasma processing chamber

[0305] 111 Main body

[0306] 111a Central Area

[0307] 111b ring region

[0308] 120 base

[0309] 121 Electrostatic Chuck

[0310] 121a Support surface

[0311] 121b Back

[0312] 122 dielectric components

[0313] 124 Conductive parts

[0314] 210 Heat transfer gas supply hole.

Claims

1. A plasma processing device, characterized in that include: plasma processing chamber; a susceptor disposed in the plasma processing chamber; and an electrostatic chuck disposed on the upper surface of the base and having a supporting surface for supporting at least one of the substrate and the ring assembly; Wherein, the electrostatic chuck includes at least one conductive component, The electrostatic chuck is provided with at least one heat transfer gas supply hole having a diameter of 0.2 mm or less and extending from the support surface to the back surface of the support surface. At least one of the conductive members is disposed around at least a portion of the heat transfer gas supply hole.

2. The plasma processing apparatus according to claim 1, wherein: A susceptor flow path communicating with the heat transfer gas supply hole is formed on the susceptor. A recessed portion having a larger diameter than the heat transfer gas supply hole is formed at a position of the electrostatic chuck corresponding to the base flow path. The heat transfer gas supply hole penetrates from the support surface to the back surface of the recessed portion.

3. The plasma processing apparatus according to claim 2, wherein: The invention includes at least one embedded member disposed in at least one of the base flow path and the recess.

4. The plasma processing apparatus according to claim 3, wherein: At least one of the embedded members has a porous structure.

5. The plasma processing apparatus according to claim 4, wherein: At least one of the conductive members is disposed around at least a portion of the recess.

6. The plasma processing apparatus according to claim 5, wherein: The conductive member disposed around the recess has an insulating layer constituting an inner wall around the recess.

7. The plasma processing apparatus according to claim 1, wherein: The base is formed with: a base flow path communicating with the heat transfer gas supply hole; and A distribution flow path connects the susceptor flow path and the end portions on the back side of the plurality of heat transfer gas supply holes to communicate with each other, and extends in an in-plane direction of the upper surface of the susceptor.

8. The plasma processing apparatus according to claim 7, wherein: The invention includes at least one embedded component arranged in at least one of the base flow path and the distribution flow path.

9. The plasma processing apparatus according to claim 8, wherein: At least one of the embedded members has a porous structure.

10. The plasma processing apparatus according to claim 1, wherein: A susceptor flow path communicating with the heat transfer gas supply hole is formed on the susceptor. A distribution flow path is formed in the electrostatic chuck, the distribution flow path connecting the base flow path and the ends of the plurality of heat transfer gas supply holes on the back side so as to communicate with each other, and extending in the in-plane direction of the electrostatic chuck. The heat transfer gas supply hole penetrates from the support surface to the back surface at the distribution flow path.

11. The plasma processing apparatus according to claim 10, wherein: The invention includes an embedded component arranged in at least one of the base flow path and the distribution flow path.

12. The plasma processing apparatus according to claim 11, wherein: The embedded member has a porous structure.

13. The plasma processing apparatus according to any one of claims 10 to 12, wherein: At least one of the conductive members is disposed around the heat transfer gas supply holes in the distribution flow path.

14. The plasma processing apparatus according to any one of claims 10 to 12, wherein: At least one of the conductive members is disposed around the entire distribution flow path.

15. The plasma processing apparatus according to any one of claims 1 to 9, wherein: At least one of the conductive members is disposed around an end portion of the heat transfer gas supply hole on the support surface side.

16. The plasma processing apparatus according to any one of claims 1 to 9, wherein: At least one of the conductive members is disposed around an end portion of the heat transfer gas supply hole on the back side.

17. The plasma processing apparatus according to any one of claims 1 to 12, wherein: The heat transfer gas supply hole has an elliptical, square, or slit-shaped cross-sectional shape with a diameter of 0.2 mm or less.

18. The plasma processing apparatus according to claim 17, wherein: An aspect ratio of the diameter of the cross-sectional shape of the heat transfer gas supply hole to the thickness of the electrostatic chuck is 7 or greater.

19. The plasma processing apparatus according to any one of claims 1 to 12, wherein: The conductive component is electrically connected to the base.

20. A substrate support for supporting at least one of a substrate and a ring assembly within a plasma processing chamber, characterized in that: including an electrostatic chuck having a support surface for supporting at least one of the substrate and the ring assembly, The electrostatic chuck includes at least one conductive component, The electrostatic chuck is provided with at least one heat transfer gas supply hole having a diameter of 0.2 mm or less and extending from the support surface to the back surface of the support surface. At least one of the conductive members is disposed around at least a portion of the heat transfer gas supply hole.

21. The substrate support portion according to claim 20, wherein: comprising a base, wherein the electrostatic chuck is arranged on the upper surface of the base, A base flow path communicating with the heat transfer gas supply hole is formed on the base, and a recessed portion having a larger diameter than the heat transfer gas supply hole is formed at a position corresponding to the base flow path on the electrostatic chuck. The heat transfer gas supply hole penetrates from the support surface to the back surface of the recessed portion.

22. The substrate support portion according to claim 21, wherein: The invention includes at least one embedded member disposed in at least one of the base flow path and the recess.

23. The substrate support portion according to claim 22, wherein: At least one of the embedded members has a porous structure.

24. The substrate support portion according to claim 23, wherein: At least one of the conductive members is disposed around at least a portion of the recess.

25. The substrate support portion according to claim 24, wherein: The conductive member disposed around the recess has an insulating layer constituting an inner wall around the recess.

26. The substrate support portion according to claim 20, wherein: The base is formed with: a base flow path communicating with the heat transfer gas supply hole; and A distribution flow path connects the susceptor flow path and the end portions on the back side of the plurality of heat transfer gas supply holes to communicate with each other, and extends in an in-plane direction of the upper surface of the susceptor.

27. The substrate support portion according to claim 26, wherein: The invention includes at least one embedded component arranged in at least one of the base flow path and the distribution flow path.

28. The substrate support portion according to claim 27, wherein: At least one of the embedded members has a porous structure.

29. The substrate support portion according to claim 20, wherein: A susceptor flow path communicating with the heat transfer gas supply hole is formed on the susceptor. A distribution flow path is formed in the electrostatic chuck, the distribution flow path connecting the base flow path and the ends of the plurality of heat transfer gas supply holes on the back side so as to communicate with each other, and extending in the in-plane direction of the electrostatic chuck. The heat transfer gas supply hole penetrates from the support surface to the back surface at the distribution flow path.

30. The substrate support portion according to claim 29, wherein: The invention includes an embedded component arranged in at least one of the base flow path and the distribution flow path.

31. The substrate support portion according to claim 30, wherein: The embedded member has a porous structure.

32. The substrate support portion according to any one of claims 29 to 31, wherein: At least one of the conductive members is disposed around the heat transfer gas supply holes in the distribution flow path.

33. The substrate support portion according to any one of claims 29 to 31, wherein: At least one of the conductive members is disposed around the entire distribution flow path.

34. The substrate support portion according to any one of claims 20 to 28, wherein: At least one of the conductive members is disposed around an end portion of the heat transfer gas supply hole on the support surface side.

35. The substrate support portion according to any one of claims 20 to 28, wherein: At least one of the conductive members is disposed around an end portion of the heat transfer gas supply hole on the back side.

36. The substrate support portion according to any one of claims 20 to 31, wherein: The heat transfer gas supply hole has an elliptical, square, or slit-shaped cross-sectional shape with a diameter of 0.2 mm or less.

37. The substrate support portion according to claim 36, wherein: An aspect ratio of the diameter of the cross-sectional shape of the heat transfer gas supply hole to the thickness of the electrostatic chuck is 7 or greater.

38. The substrate support portion according to any one of claims 20 to 31, wherein: The conductive component is electrically connected to the base.

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