Glass surface AG (anti-glare) etching method based on Thiessen polygon structure

Abstract

The invention relates to the technical field of glass processing, and discloses a glass surface AG (anti-glare) etching method based on a Thiessen polygon structure, which comprises the following steps: S1, pretreating a glass substrate: cleaning and polishing the surface of the glass substrate; s2, pattern transfer: coating acid-resistant photoresist on the surface of the glass, and forming a Thiessen polygonal mask pattern through ultraviolet exposure and development; s3, chemical etching: selectively etching the mask pattern area by using an etching solution containing fluoride; and S4, deplating and hydrophobic treatment: removing the residual photoresist, and carrying out hydrophobic modification treatment on the etched surface to form a hydrophobic treatment layer. Through the Thiessen polygon mask and the dynamic etching technology, the etching uniformity is improved, the surface touch feeling is optimized, and the function performance and the production efficiency of the anti-dazzle glass are greatly improved in combination with precise liquid control and an automatic recovery system.

Description

Technical Field

[0001] The present invention relates to the technical field of glass processing, in particular to an AG anti-glare etching method for a glass surface based on a Thiessen polygon structure. Background Art

[0002] With the continuous advancement of display technology, optical anti-glare glass (AG glass) is an important display panel material and is widely used in electronic devices such as smartphones, televisions, and computers. The main function of AG glass is to reduce reflected light and glare through surface treatment technology to improve visual comfort. Traditional AG glass surface treatment processes mostly use random etching or scratching technology to create micron-level surface texture structures. The function of these textures is to increase the scattering angle of light and reduce the intensity of reflected light, thereby improving visibility. However, the existing technology still has several significant problems in practical applications.

[0003] First, traditional random etching techniques are prone to localized over- or under-etching during production, resulting in large fluctuations in surface haze, which directly impacts the optical performance of the final product. Some traditional techniques, through random spraying or uneven surface reactions, create uneven etching, making it difficult to ensure overall surface consistency. This poor uniformity not only reduces product quality but also renders subsequent coating or thin-film treatments less effective, impacting the optical properties and weather resistance of the glass.

[0004] Secondly, the surface treatment process of traditional AG glass often results in a noticeable graininess or roughness, which can be uncomfortable to the touch. This phenomenon is mainly caused by excessive surface etching or the failure of traditional processing methods to effectively smooth the edge structure, which affects the product's tactile experience. In high-end consumer electronics, consumers have increasingly high demands for tactile feel. Rough or uneven surfaces directly reduce the product's tactile quality, thereby affecting the user experience.

[0005] Finally, existing technologies also face certain bottlenecks in production efficiency and cost control. Traditional AG glass production processes typically require the use of highly concentrated etching solutions and a lengthy etching process. Furthermore, etching solution recovery and wastewater treatment are often inefficient, increasing production costs and placing a certain burden on the environment. Furthermore, due to complex process control and the high level of manual intervention, batch production yields and consistency are poor, making it difficult to meet the demands of large-scale production. Summary of the Invention

[0006] In response to the shortcomings of the existing technology, the present invention provides an AG anti-glare etching method for glass surface based on a Thiessen polygon structure, which solves the problems of existing anti-glare glass in terms of poor etching uniformity, rough touch and low production efficiency.

[0007] To achieve the above objectives, the present invention is implemented through the following technical solutions: a glass surface AG anti-glare etching method based on a Thiessen polygon structure comprises the following steps:

[0008] S1. Glass substrate pretreatment: cleaning and polishing the surface of the glass substrate;

[0009] S2, pattern transfer: coating an acid-resistant photoresist on the glass surface, and forming a Vossen polygon mask pattern through UV exposure and development;

[0010] S3, chemical etching: using a fluoride-containing etching solution to selectively etch the mask pattern area;

[0011] S4. Stripping and hydrophobic treatment: removing the residual photoresist and performing hydrophobic modification on the etched surface to form a hydrophobic treatment layer.

[0012] Preferably, the pretreatment in step S1 includes:

[0013] S1.1. Clean the glass substrate using an ultrasonic cleaner with a mixture of deionized water and a surfactant.

[0014] S1.2. Mechanically polish or chemically polish the cleaned glass substrate to a surface roughness of Ra ≤ 10 nm;

[0015] S1.3. Dry the polished glass substrate at 100-150°C for 10-30 minutes.

[0016] Preferably, the polishing liquid used for chemical polishing in step S1.2 comprises a mixture of hydrofluoric acid and a corrosion inhibitor, wherein the concentration of the corrosion inhibitor is 0.1-0.5 wt %.

[0017] Preferably, the photoresist in step S2 is an acid-resistant positive photoresist or a negative photoresist, has a thickness of 1-5 μm, and is spin-coated at a speed of 500-3000 rpm.

[0018] Preferably, in step S2, the side length of the Thiessen polygon mask pattern is 0.1-1 mm, and the pattern coverage is 50-90%.

[0019] Preferably, the fluoride-containing etching solution in step S3 comprises the following components by weight:

[0020] Ammonium hydrofluoride 1-5%;

[0021] Oxalic acid 0.5-2%;

[0022] Surfactant 0.1-0.5%;

[0023] The balance is water.

[0024] Preferably, in step S3, the etching method adopts a dynamic spraying method with a spraying pressure of 0.1-0.5 MPa, or the etching liquid flow rate is controlled to 50-300 rpm by a stirring device.

[0025] Preferably, the hydrophobic modification treatment in step S4 is performed by spraying a fluorinated organic silicon sol, and the chemical formula of the sol is CF3-(CH2)3-Si(OR)3.

[0026] Preferably, the etching depth in step S3 is 100-800 nm.

[0027] Preferably, in step S4, the thickness of the hydrophobic treatment layer is 50-200 nm, the curing temperature is 100-150° C., and the curing time is 10-30 min.

[0028] The present invention provides a glass surface AG anti-glare etching method based on a Thiessen polygon structure. It has the following beneficial effects:

[0029] 1. This invention uses a Thiessen polygon mask structure combined with dynamic etching control to achieve a breakthrough in solving the problem of process uniformity in traditional random etching. The existing technology causes local over-etching or under-etching due to disordered textures, and the surface haze fluctuates significantly. This solution uses the geometric self-similarity of Thiessen polygons to accurately control the etching depth, achieve uniform coverage of the etched surface, significantly improve haze consistency, and eliminate the optical mottle defects of traditional processes.

[0030] 2. The present invention creatively combines the dual requirements of anti-glare and delicate touch through the coordinated optimization of polygonal edge smooth transition design and surface roughness. The existing AG glass has a rough tactile experience due to the obvious etched graininess. This solution utilizes the continuous curvature characteristics of the Thiessen polygon structure to form a nano-micrometer-level gradient undulation on the etched surface, while maintaining low reflectivity and achieving a skin-like smooth touch.

[0031] 3. This invention, based on the disruptive improvement of precise mask etching and automated liquid circulation, reconstructs the production efficiency of anti-glare glass. The traditional process relies on immersion in high-concentration etching solution and has high waste liquid treatment costs. This solution improves the utilization rate of etching solution through the directional window design of the mask pattern. Combined with the closed-loop recovery of the dynamic spray system, it realizes efficient and low-consumption batch manufacturing and improves single-line production capacity. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 Flowchart of the method of the present invention. DETAILED DESCRIPTION

[0033] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the present specification. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0034] Please see the attached Figure 1 The following embodiments of the present invention provide a glass surface AG anti-glare etching method based on a Thiessen polygon structure, and the specific contents are as follows:

[0035] Example 1: High-transmittance AG glass

[0036] Preparation parameters:

[0037] Substrate pretreatment:

[0038] Glass type: high borosilicate glass (thickness 0.7mm);

[0039] Cleaning solution: deionized water + 0.8wt% sodium dodecyl sulfate (SDS);

[0040] Ultrasonic cleaning: 60kHz, 5 min;

[0041] Chemical polishing solution: 3 wt% hydrofluoric acid + 0.3 wt% benzotriazole (BTA) corrosion inhibitor;

[0042] Drying conditions: 120°C, 20 min;

[0043] Pattern transfer:

[0044] Photoresist: positive photoresist ( 1500), spin coating speed 2000rpm, glue thickness 2μm;

[0045] Mask pattern: Thiessen polygon side length 0.3mm, coverage 70%;

[0046] Exposure energy: 300mJ / cm 2 (i-line 365nm);

[0047] Development time: 45 s (2.38% TMAH);

[0048] Chemical etching:

[0049] Etching solution:

[0050] Ammonium hydrofluoride (NH4HF2) 2wt%;

[0051] Oxalic acid (H2C2O4) 1wt%;

[0052] Fluorocarbon surfactant (FC-4430) 0.2 wt%;

[0053] Etching method: dynamic spray, pressure 0.3MPa, time 8min;

[0054] Etching depth: 250nm;

[0055] Hydrophobic treatment:

[0056] Sol: CF3-(CH2)3-Si(OCH2CH3)3 (spraying thickness 80nm);

[0057] Curing conditions: 130℃, 15min.

[0058] Example 2: High-haze AG glass

[0059] Preparation parameters:

[0060] Substrate pretreatment:

[0061] Glass type: Aluminosilicate glass (thickness 1.5 mm);

[0062] Mechanical polishing: cerium oxide abrasive (particle size 0.5 μm), Ra = 8 nm;

[0063] Drying conditions: 140°C, 25 min;

[0064] Pattern transfer:

[0065] Photoresist: negative photoresist (SU-83005), spin coating speed 1000 rpm, thickness 4 μm; mask pattern: Thiessen polygon side length 0.8 mm, coverage 85%;

[0066] Exposure energy: 400mJ / cm 2 (UV-LED 395nm);

[0067] Development time: 60s (PGMEA solvent);

[0068] Chemical etching:

[0069] Etching solution:

[0070] Ammonium hydrofluoride (NH4HF2) 4wt%;

[0071] Oxalic acid (H2C2O4) 1.5wt%;

[0072] Polyethylene glycol (PEG-400) 0.4 wt%;

[0073] Etching method: stirring etching (200 rpm), time 15 min;

[0074] Etching depth: 600nm;

[0075] Hydrophobic treatment:

[0076] Sol: CF3-(CH2)3-Si(OCH3)3 (spraying thickness 150nm);

[0077] Curing conditions: 150℃, 25min.

[0078] Example 3: Weather-resistant AG glass

[0079] Preparation parameters:

[0080] Substrate pretreatment:

[0081] Glass type: Soda lime glass (thickness 2.0mm);

[0082] Chemical polishing solution: 5 wt% hydrofluoric acid + 0.5 wt% thiourea corrosion inhibitor;

[0083] Drying conditions: 150°C, 30 min;

[0084] Pattern transfer:

[0085] Photoresist: positive photoresist ( 4620), spin coating speed 500 rpm, glue thickness 5 μm; mask pattern: Thiessen polygon side length 0.1 mm, coverage 50%;

[0086] Exposure energy: 200mJ / cm 2 (high-pressure mercury lamp);

[0087] Development time: 30 s (0.26% KOH);

[0088] Chemical etching:

[0089] Etching solution:

[0090] Ammonium hydrofluoride (NH4HF2) 5wt%;

[0091] Oxalic acid (H2C2O4) 2wt%;

[0092] Sodium dodecylbenzenesulfonate (SDBS) 0.5wt%;

[0093] Etching method: static immersion (stirring rate 50 rpm), time 5 min;

[0094] Etching depth: 800nm;

[0095] Hydrophobic treatment:

[0096] Sol: CF3-(CH2)3-Si(OC2H5)3 (spraying thickness 200nm);

[0097] Curing conditions: 100℃, 30min.

[0098] Comparative Example 1: Compared with Example 1, the difference is that oxalic acid is not added to the etching solution, and the rest are the same.

[0099] Comparative Example 2: Compared with Example 1, the difference is that the dynamic spray pressure is adjusted to 0.05 MPa (lower than the claim range), and the rest are the same.

[0100] Comparative Example 3: Compared with Example 2, the difference is that ammonium hydrofluoride is replaced by ordinary hydrofluoric acid of equal concentration, and the rest are the same.

[0101] Comparative Example 4: Compared with Example 2, the difference is that the stirring device is eliminated (static immersion in the etching solution), and the rest are the same.

[0102] Comparative Example 5: Compared with Example 3, the difference is that the surfactant (SDBS) is replaced by ethanol of the same concentration, and the rest are the same.

[0103] Comparative Example 6: Compared with Example 3, the difference is that the etching time is extended to 30 minutes (beyond the scope of the claims), and the rest are the same.

[0104] Experiment 1: Effects of Etching Solution Composition and Spray Pressure on Optical Properties

[0105] Comparative group: Example 1 vs. Comparative Example 1 (no oxalic acid), Comparative Example 2 (low spray pressure).

[0106] Experimental steps:

[0107] Sample preparation:

[0108] Six high borosilicate glass substrates (0.7 mm thick) were taken and divided into three groups (Example 1, Comparative Example 1, Comparative Example 2), with two substrates in each group.

[0109] Pre-treatment (cleaning, polishing, drying) as per the requirements.

[0110] Etching treatment:

[0111] Example 1: Executed according to the parameters of the claim (containing 1wt% oxalic acid, spraying pressure 0.3MPa).

[0112] Comparative Example 1: Oxalic acid was removed from the etching solution, and the other parameters were the same.

[0113] Comparative Example 2: The spray pressure was adjusted to 0.05 MPa, and the other parameters were the same.

[0114] Post-treatment: stripping and hydrophobic treatment (same as Example 1).

[0115] Test analysis:

[0116] Light transmittance: Use an integrating sphere spectrometer (wavelength 380-780nm) and measure 5 points on each piece of glass to take the average value.

[0117] Haze: ASTM D1003 standard, each piece of glass is measured 3 times.

[0118] Surface crystallization: SEM imaging (5000 times), and statistical analysis of the crystallization area (ImageJ software analysis).

[0119] Experimental data:

[0120] Table 1. Test data of the effects of etching solution composition and spray pressure on optical properties

[0121]

[0122] Data Description:

[0123] Light transmittance:

[0124] In Comparative Example 1, the lack of oxalic acid resulted in the deposition of byproducts, and the transmittance decreased significantly (about 83% vs. 92% in Example 1).

[0125] In Comparative Example 2, insufficient spray pressure resulted in uneven etching, and the transmittance fluctuation range increased (±2.4% vs. ±0.6% in the embodiment).

[0126] Haze:

[0127] The haze of Comparative Example 1 increased (26-28% vs. 18-19% in Example 1) due to enhanced crystal scattering.

[0128] The haze standard deviation of Comparative Example 2 is as high as ±6.0%, reflecting the uneven surface texture.

[0129] Surface crystallization: The crystallization area accounts for more than 15% in Comparative Example 1, while it is only 0.6-0.7% in Example 1.

[0130] Surface roughness: Due to over-corrosion, the Ra value of Comparative Example 1 reaches 45-48 nm (about 12-13 nm in Example 1).

[0131] Experimental summary: The absence of oxalic acid in the etching solution directly destroys the dynamic balance between ammonium hydrofluoride and by-products. In the absence of oxalic acid, the Ca 2+ 、Na +The plasma cannot be effectively complexed, resulting in the rapid crystallization and precipitation of fluorosilicates (such as CaF2) and silicon oxide particles on the glass surface (SEM shows that the crystallization area accounts for >15%). These micron-sized crystals strongly scatter the incident light, not only causing a decrease in transmittance (from 92% to 83%), but also significantly increasing the haze (from 19% to 28%). In addition, local stress concentration in the crystallized area causes the surface roughness (Ra) to soar to over 45nm, far exceeding the functional requirements of AG glass (Ra≤10nm).

[0132] Insufficient spray pressure (0.05MPa) disrupts the uniform flow field distribution of the etching solution on the glass surface. The low pressure prevents the etching solution from fully penetrating the microstructure at the edge of the Thiessen polygon mask, and reaction byproducts and bubbles are retained in the etching grooves, forming a local concentration gradient. This non-uniform etching causes the surface texture depth fluctuation range to expand (50-300nm), which is manifested macroscopically as drastic fluctuations in haze value (standard deviation ±6.0%) and uneven spatial distribution of transmittance (local area transmittance difference >5%). The core mechanism of the dynamic spray process - maintaining the renewal of the reaction interface through fluid shear force - fails under these conditions.

[0133] The synergistic effect of oxalic acid and spray pressure is further reflected in the control of etching kinetics. When oxalic acid is present, its complexation slows down the dissociation rate of NH4HF2, making HF - The release of ions and the replenishment of the etchant by spraying are balanced. This balance is enhanced by the 0.3 MPa spray pressure in Example 1, ultimately achieving highly controllable etching depth (250 ± 20 nm) and surface morphology. However, the failure of Comparative Examples 1-2 demonstrates that the absence of a single component or the deviation of process parameters will disrupt the multi-scale control mechanism, leading to the overall degradation of AG performance.

[0134] Experiment 2: Effects of Etching Solution Type and Dynamic Conditions on Surface Morphology

[0135] Comparative group: Example 2 vs. Comparative Example 3 (replacing ammonium hydrofluoride with HF), Comparative Example 4 (canceling stirring).

[0136] Experimental steps:

[0137] Sample preparation:

[0138] Six aluminosilicate glass substrates (1.5 mm thick) were taken and divided into three groups (Example 2, Comparative Example 3, Comparative Example 4), with two substrates in each group.

[0139] Pre-treatment according to the claims (mechanical polishing Ra = 8nm, drying).

[0140] Etching treatment:

[0141] Example 2: Executed according to the claimed parameters (NH4HF 24wt%, stirring speed 200rpm).

[0142] Comparative Example 3: NH4HF2 was replaced by ordinary hydrofluoric acid (HF4wt%) of equal concentration, and the other parameters were the same.

[0143] Comparative Example 4: The stirring device was removed (static immersion), and the other parameters were the same.

[0144] Post-processing:

[0145] Stripping and hydrophobic treatment (same as Example 2).

[0146] Test analysis:

[0147] Etching rate: The etch depth was measured over time using a step profiler (DektakXT) and the average etching rate (nm / min) was calculated.

[0148] Surface roughness Ra: Atomic force microscope (AFM, Bruker Dimension Icon) scanned a 5×5 μm area.

[0149] Pattern resolution: Optical microscope (Olympus BX53) was used to measure the edge clarity of Thiessen polygons (percentage of edge blur).

[0150] Experimental data:

[0151] Table 2. Test data on the effects of etching solution type and dynamic conditions on surface morphology

[0152]

[0153] Data Description:

[0154] Etching rate:

[0155] In Comparative Example 3, the rate increased dramatically to 110 nm / min (about 40 nm / min in Example 2) due to the use of HF (strongly corrosive).

[0156] The static etching rate of Comparative Example 4 decreased and fluctuated greatly (±10 nm / min) because the exchange of reactants was hindered.

[0157] Surface roughness:

[0158] In Comparative Example 3, the Ra value exceeded 50 nm (about 13 nm in Example 2) due to uncontrollable HF etching.

[0159] In Comparative Example 4, the Ra value increased to 30 nm due to the local concentration gradient.

[0160] Pattern resolution:

[0161] The edge blur ratio of Comparative Example 3 is greater than 35% (Example 2 is less than 10%), because the mask edge is damaged by excessive lateral etching of HF.

[0162] The standard deviation of the resolution of Comparative Example 4 is ±12%, reflecting the randomness of static etching.

[0163] Experiment 3: Effects of surfactant and etching time on weather resistance

[0164] Comparative group: Example 3 vs. Comparative Example 5 (surfactant replacement), Comparative Example 6 (overtime etching).

[0165] Experimental steps:

[0166] Sample preparation:

[0167] Six soda-lime glass substrates (2.0 mm thick) were taken and divided into three groups (Example 3, Comparative Example 5, Comparative Example 6), with two substrates in each group.

[0168] Pre-treatment (chemical polishing, drying) as per the requirements.

[0169] Etching treatment:

[0170] Example 3: Executed according to the parameters of the claims (SDBS surfactant 0.5wt%, etching time 5min).

[0171] Comparative Example 5: SDBS was replaced with ethanol of equal concentration, and the other parameters remained the same.

[0172] Comparative Example 6: The etching time was extended to 30 min, and the other parameters were the same.

[0173] Post-processing:

[0174] Stripping and hydrophobic treatment (same as Example 3).

[0175] Test analysis:

[0176] Etching uniformity: A laser confocal microscope (Keyence VK-X3000) was used to scan a 5 × 5 mm area and calculate the percentage of unetched spots.

[0177] Mechanical strength: Three-point bending test (Instron 5967), record the maximum breaking load (N).

[0178] Hydrophobicity: contact angle measurement instrument (Dataphysics OCA25), water drop volume 2 μL, 5 points were measured and the average value was taken.

[0179] Experimental data:

[0180] Table 3. Test data of the effects of surfactant and etching time on weather resistance

[0181]

[0182] Data Description:

[0183] Unetched area:

[0184] In Comparative Example 5, ethanol cannot reduce the surface tension of the etching solution, resulting in poor wettability, resulting in the proportion of unetched spots being greater than 14% (only 1.2-1.5% in Example 3).

[0185] In Comparative Example 6, the mask is partially penetrated due to over-etching, and the unetched area is reduced (but the depth deviation is extremely large).

[0186] Mechanical strength:

[0187] In Comparative Example 6, the etching depth exceeded the limit (800→1500 nm), the effective bearing area of the glass cross section decreased, and the breaking load dropped sharply to 175-193 N (about 470 N in Example 3).

[0188] Hydrophobicity:

[0189] The contact angle of Comparative Example 5 is less than 90° because the surface energy of the unetched area is high and the hydrophobic layer cannot completely cover it.

[0190] In Comparative Example 6, the hydrophobic layer was unevenly sprayed due to excessive etching (contact angle fluctuation was ±6°).

[0191] Experimental summary: The wetting control of surfactants is the core mechanism to ensure etching uniformity. In Example 3, sodium dodecylbenzene sulfonate (SDBS) reduces the surface tension of the etching solution (from 72mN / m to 35mN / m), allowing the solution to fully infiltrate the micro-nanostructure gaps of the Tyson polygon mask, and the proportion of unetched areas is stabilized at less than 1.5%. However, the addition of ethanol in Comparative Example 5 cannot effectively reduce the surface tension, and the etching solution forms discrete droplets on the glass surface (contact angle>90°), resulting in more than 14% unetched spots in local areas due to wetting failure. These spots become stress concentration points in the three-point bending test, causing the breaking load to drop to 398N (472N in Example 3). At the same time, the area not covered with the hydrophobic layer has a contact angle of <90° due to the increase in surface energy, and the hydrophobic function is completely lost.

[0192] Excessive extension of the etching time breaks the balance between the structural strength and functionality of the glass surface. The etching time of 5 minutes in Example 3 maintains the depth at 800nm. At this time, the convex cell structure of the Thiessen polygon can still maintain a fracture strength of 485N through stress dispersion when subjected to mechanical load. In Comparative Example 6, the over-etching of 30 minutes causes the etching depth to exceed 1500nm, and the effective bearing area of the glass cross section is reduced by more than 30%. In the three-point bending test, the substrate undergoes brittle fracture under a load of 175N. More seriously, the excessively deep etching grooves destroy the continuity of the hydrophobic sol (confocal microscopy shows that the film thickness fluctuates by ±680nm). Although the contact angle remains at 119°, the film is easily peeled off due to mechanical friction in actual use.

[0193] The synergistic effect of surfactant and etching time is ultimately reflected in the global optimization of weather resistance. The wetting effect of SDBS in Example 3 enables the etching solution to complete the precise replication of the mask pattern within 5 minutes, and the resulting 800nm etching depth ensures both haze (25-30%) and substrate strength. At the same time, the uniform etching surface provides an ideal attachment base for the fluorinated organosilicon sol, the hydrophobic layer thickness deviation is controlled within ±50nm, and the contact angle is stable at above 115°. The failure of comparative examples 5-6 shows that the loss of control of a single condition will trigger cascade degradation - wetting failure leads to uneven etching, and excessive etching induces mechanical fragility. The two together undermine the long-term stability of AG glass in harsh industrial environments.

[0194] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the appended claims and their equivalents.

Claims

1. A glass surface AG anti-glare etching method based on a Thiessen polygon structure, characterized in that: The following steps are involved: S1. Glass substrate pretreatment: cleaning and polishing the surface of the glass substrate; S2, pattern transfer: coating an acid-resistant photoresist on the glass surface, and forming a Vossen polygon mask pattern through UV exposure and development; S3, chemical etching: using a fluoride-containing etching solution to selectively etch the mask pattern area; S4. Stripping and hydrophobic treatment: removing the residual photoresist and performing hydrophobic modification on the etched surface to form a hydrophobic treatment layer.

2. The glass surface AG anti-glare etching method based on the Thiessen polygon structure according to claim 1 is characterized in that: The pretreatment in step S1 includes: S1.

1. Clean the glass substrate using an ultrasonic cleaner with a mixture of deionized water and a surfactant. S1.

2. Mechanically polish or chemically polish the cleaned glass substrate to a surface roughness of Ra ≤ 10 nm; S1.

3. Dry the polished glass substrate at 100-150°C for 10-30 minutes.

3. The glass surface AG anti-glare etching method based on the Thiessen polygon structure according to claim 2 is characterized in that: The polishing liquid used for chemical polishing in step S1.2 comprises a mixture of hydrofluoric acid and a corrosion inhibitor, wherein the concentration of the corrosion inhibitor is 0.1-0.5 wt %.

4. The glass surface AG anti-glare etching method based on the Thiessen polygon structure according to claim 1 is characterized in that: The photoresist in step S2 is an acid-resistant positive photoresist or a negative photoresist with a thickness of 1-5 μm and a spin coating speed of 500-3000 rpm.

5. The glass surface AG anti-glare etching method based on the Thiessen polygon structure according to claim 1 is characterized in that: In the step S2, the side length of the Thiessen polygon mask pattern is 0.1-1 mm, and the pattern coverage is 50-90%.

6. The glass surface AG anti-glare etching method based on the Thiessen polygon structure according to claim 1 is characterized in that: The fluoride-containing etching solution in step S3 comprises the following components by weight: Ammonium hydrofluoride 1-5%; Oxalic acid 0.5-2%; Surfactant 0.1-0.5%; The balance is water.

7. The glass surface AG anti-glare etching method based on the Thiessen polygon structure according to claim 1, characterized in that: In the step S3, the etching method adopts a dynamic spraying method with a spraying pressure of 0.1-0.5 MPa, or the etching liquid flow rate is controlled to 50-300 rpm by a stirring device.

8. The glass surface AG anti-glare etching method based on the Thiessen polygon structure according to claim 1 is characterized in that: The hydrophobic modification treatment in step S4 is performed by spraying a fluorinated organic silicon sol, and the chemical formula of the sol is CF3-(CH2)3-Si(OR)3.

9. The glass surface AG anti-glare etching method based on the Thiessen polygon structure according to claim 1, characterized in that: The etching depth in the step S3 is 100-800 nm.

10. The glass surface AG anti-glare etching method based on the Thiessen polygon structure according to claim 1, characterized in that: In the step S4, the thickness of the hydrophobic treatment layer is 50-200 nm, the curing temperature is 100-150° C., and the curing time is 10-30 min.

Images