Semiconductor processing chamber and thin film deposition equipment

Abstract

The invention relates to the technical field of semiconductor preparation, and discloses a semiconductor processing chamber which comprises a reaction cavity, a spraying assembly, an air exhaust assembly and an air blowing assembly. The spraying assembly comprises a top plate arranged at the top of the reaction cavity and a spraying plate arranged below the top plate; the air exhaust assembly is arranged on the side wall of the reaction cavity, and a first set gap is formed between the air exhaust assembly and the spraying plate; the air blowing assembly is arranged between the side wall of the reaction cavity and the air exhaust assembly, the air blowing assembly is provided with an air blowing opening, and air blown out of the air blowing opening passes through a first set gap between the spraying plate and the air exhaust assembly. Therefore, residual reaction products in the gaps can be effectively removed, and the reaction products can be prevented from flowing to the gaps, so that the cleanliness of the cavity is ensured, and the film deposition quality is improved. The invention further discloses thin film deposition equipment.

Description

Technical Field

[0001] The present application relates to the field of semiconductor preparation technology, and in particular to a semiconductor processing chamber and thin film deposition equipment. Background Art

[0002] Currently, atomic layer deposition (ALD) technology can introduce two or more process gases into the reaction chamber separately, so that each process gas undergoes a fully saturated surface chemical reaction on the substrate surface and is deposited on the substrate surface in the form of a single atomic film.

[0003] For example, a related art provides a thin film deposition apparatus comprising a chamber, a pedestal for supporting wafers, an upper cover and a shower plate above the pedestal, and an exhaust structure on the side of the pedestal. Thus, process gas is blown into the pedestal from the shower plate and exhausted from the exhaust structure. If plasma is present in the chamber, the plasma has diffusion properties and will form a thin film not only on the wafer surface, but also on the surface of the shower plate, the sidewalls of the reaction chamber, and the bottom of the heating plate. Therefore, the reaction products formed during the deposition process need to be regularly cleaned.

[0004] During the implementation of the embodiments of the present disclosure, it was found that at least the following problems exist in the related art:

[0005] Since there is a gap at the connection between the spray structure and the exhaust structure, reaction products may be formed in the gap. Due to the depth of the gap, the traditional cleaning method may not be able to clean the reaction products in the gap, thereby affecting the cleanliness of the cavity and even the product yield.

[0006] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of this application, and therefore may include information that does not constitute prior art known to ordinary technicians in this field. Summary of the Invention

[0007] In order to provide a basic understanding of some aspects of the disclosed embodiments, a brief summary is given below. The summary is not an extensive review, nor is it intended to identify key / critical elements or delineate the scope of protection of these embodiments, but rather serves as a prelude to the detailed description that follows.

[0008] The embodiments of the present disclosure provide a semiconductor processing chamber and thin film deposition equipment, which can not only effectively remove residual reaction products in the gap, but also prevent the reaction products from flowing into the gap, thereby ensuring the cleanliness of the chamber and improving the quality of thin film deposition.

[0009] In some embodiments, the semiconductor processing chamber includes a reaction chamber, a spray assembly, an exhaust assembly, and an air blowing assembly. The spray assembly includes a top plate disposed on the top of the reaction chamber and a spray plate disposed below the top plate; the exhaust assembly is disposed on the side wall of the reaction chamber, with a first set gap between the exhaust assembly and the spray plate; and the air blowing assembly is disposed between the side wall of the reaction chamber and the exhaust assembly, wherein the air blowing assembly is provided with an air port, and gas blown out of the air port passes through the first set gap between the spray plate and the exhaust assembly.

[0010] In some embodiments, there are multiple blowing ports, and the multiple blowing ports are distributed along the circumference of the first set gap.

[0011] In some embodiments, the calibers of the multiple blowing ports are all set to be equal.

[0012] In some embodiments, the caliber range of the air port is [0.1 mm, 1 mm].

[0013] In some embodiments, the plurality of blowing ports are arranged at equal intervals.

[0014] In some embodiments, the spacing between the plurality of blowing ports is in the range of [5 mm, 20 mm].

[0015] In some embodiments, the air blowing port includes a first air blowing port toward the air extraction assembly and / or a second air blowing port toward the shower plate.

[0016] In some embodiments, there is a second set gap between the blowing assembly and the exhaust assembly, and the second set gap is connected to the first set gap, and the gas blown out from the first blowing port of the blowing assembly can flow along the second set gap to the first set gap.

[0017] In some embodiments, the value range of the second set gap is [1 mm, 2 mm].

[0018] In some embodiments, there is a third set gap between the blowing assembly and the spray plate, and the third set gap is connected to the first set gap, and the gas blown out from the second blowing port of the blowing assembly can flow along the third set gap to the first set gap.

[0019] In some embodiments, the blowing assembly includes a blowing surface and an air inlet surface; wherein the blowing surface is provided with a blowing port.

[0020] In some embodiments, the cross section of the blowing surface is an arc-shaped surface or a polygonal surface.

[0021] In some embodiments, a first annular mounting groove is provided on the side wall of the reaction chamber, and the gas extraction assembly is provided in the first annular mounting groove.

[0022] In some embodiments, the exhaust assembly is provided with a second annular mounting groove, and a third annular mounting groove is further provided on the groove wall of the first annular mounting groove; wherein the blowing assembly is provided in the second annular mounting groove and / or the third annular mounting groove.

[0023] In some embodiments, the material of the blowing component includes a metal material.

[0024] In some embodiments, the thin film deposition apparatus includes the semiconductor processing chamber as described in the aforementioned embodiments.

[0025] The semiconductor processing chamber and thin film deposition equipment provided by the embodiments of the present disclosure can achieve the following technical effects:

[0026] By installing a blow assembly between the sidewall of the reaction chamber and the exhaust assembly, and by directing gas from the blow assembly's outlet through a first predetermined gap between the shower plate and the exhaust assembly, reaction products within the first predetermined gap can be effectively removed. Furthermore, during thin film deposition, the blow assembly continuously blows air into the first predetermined gap, effectively preventing reaction products from migrating toward the first predetermined gap. This effectively improves chamber cleanliness and, consequently, thin film deposition quality.

[0027] Furthermore, the placement of the air blowing assembly between the sidewall of the reaction chamber and the exhaust assembly effectively avoids the risk of plasma discharge. Furthermore, placing the air blowing assembly on one side of the reaction chamber, compared to placing it on the side of the upper cover (spray assembly), reduces the need for air passage through the chamber when purging the reaction products within the first set gap, thereby reducing sealing risks and assembly and disassembly difficulties.

[0028] The above general description and the following description are exemplary and explanatory only and are not intended to limit the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] One or more embodiments are exemplarily described by corresponding drawings. These exemplary descriptions and drawings do not limit the embodiments. Elements with the same reference numerals in the drawings are shown as similar elements. The drawings do not constitute a scale limitation. In addition,

[0030] Figure 1 It is a structural schematic diagram of a thin film deposition device in the prior art;

[0031] Figure 2 yes Figure 1 A partial enlarged view of point A in the middle;

[0032] Figure 3 This is a schematic diagram of the structure of a semiconductor processing device provided by an embodiment of the present disclosure. Figure 1 ;

[0033] Figure 4 yes Figure 3 A partial enlargement of point B in the middle Figure 1 ;

[0034] Figure 5 yes Figure 3 A partial enlargement of point B in the middle Figure 2 ;

[0035] Figure 6 yes Figure 3 A partial enlargement of point B in the middle Figure 3 ;

[0036] Figure 7 is a structural schematic diagram of an air blowing assembly provided by an embodiment of the present disclosure;

[0037] Figure 8 is a cross-sectional view of an air blowing assembly provided by an embodiment of the present disclosure;

[0038] Figure 9 This is a schematic diagram of the structure of a semiconductor processing device provided by an embodiment of the present disclosure. Figure 2 .

[0039] Reference numerals:

[0040] 1: Cavity; 2: Spray structure; 3: Exhaust structure; 4: Reserved gap;

[0041] 10: reaction chamber; 11: exhaust channel; 12: air inlet channel; 13: side lining plate; 14: bottom lining plate; 15: wafer transfer channel; 16: first annular mounting groove;

[0042] 20: Spray assembly; 21: Top plate; 22: Spray plate; 23: Air intake block;

[0043] 30: exhaust assembly; 31: first annular split body; 311 exhaust port; 32: second annular split body; 321: exhaust surface; 322: second annular mounting groove;

[0044] 40: Blowing assembly; 41: Blowing surface; 411: Blowing port; 412: First blowing port; 413: Second blowing port; 42: Inlet surface;

[0045] 50: heating plate; 60: wafer;

[0046] 100: first setting gap; 200: second setting gap; 300: third setting gap. DETAILED DESCRIPTION

[0047] In order to be able to understand the features and technical content of the embodiments of the present disclosure in more detail, the implementation of the embodiments of the present disclosure is described in detail below in conjunction with the accompanying drawings. The accompanying drawings are for reference only and are not used to limit the embodiments of the present disclosure. In the following technical description, for the sake of convenience of explanation, a full understanding of the disclosed embodiments is provided through multiple details. However, one or more embodiments can still be implemented without these details. In other cases, to simplify the drawings, well-known structures and devices can be simplified for display.

[0048] In the description and claims of the embodiments of the present disclosure, as well as in the accompanying drawings, the terms "first," "second," and the like are used to distinguish similar items and are not necessarily used to describe a particular order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate to describe the embodiments of the present disclosure herein. In addition, the terms "including," "having," and any variations thereof are intended to cover non-exclusive inclusions.

[0049] In the embodiments of the present disclosure, the terms "upper", "lower", "inside", "middle", "outside", "front", "back" and the like indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings. These terms are mainly intended to better describe the embodiments of the present disclosure and their embodiments, and are not intended to limit the indicated devices, elements or components to having a specific direction, or to be constructed and operated in a specific direction. Moreover, in addition to being used to indicate directions or positional relationships, some of the above terms may also be used to indicate other meanings. For example, the term "upper" may also be used to indicate a certain dependency or connection relationship in certain circumstances. For those of ordinary skill in the art, the specific meanings of these terms in the embodiments of the present disclosure can be understood according to specific circumstances.

[0050] Furthermore, the terms "disposed," "connected," and "fixed" should be interpreted broadly. For example, "connected" can mean a fixed connection, a removable connection, or an integral structure; it can be a mechanical connection or an electrical connection; it can be a direct connection, an indirect connection through an intermediary, or an internal connection between two devices, elements, or components. Those skilled in the art will understand the specific meanings of these terms in the embodiments of this disclosure based on the specific circumstances.

[0051] Unless otherwise stated, the term "plurality" means two or more.

[0052] In the embodiment of the present disclosure, the character " / " indicates that the preceding and following objects are in an "or" relationship. For example, A / B means: A or B.

[0053] The term "and / or" describes an association between objects, indicating that three relationships can exist. For example, A and / or B means: A or B, or A and B.

[0054] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present disclosure can be combined with each other.

[0055] Currently, traditional thin film deposition technologies, including physical vapor deposition (PVD) and chemical vapor deposition (CVD), are unable to effectively and precisely control film properties in key production steps and meet increasingly stringent process requirements. This is where ALD's unique capabilities come into play, such as its ability to form high-quality, pinhole-free, conformal films on complex, non-planar and three-dimensional structures.

[0056] Currently, atomic layer deposition (ALD), one of the most advanced thin-film deposition technologies, is widely used in advanced microelectronics, display, MEMS, sensor, photovoltaic cell, and other manufacturing industries. With the continuous development of modern science and technology, its applications will continue to grow in the near future.

[0057] In the related art, the structure of the thin film deposition equipment is as follows Figure 1 and Figure 2 As shown, the apparatus comprises a chamber 1, a spray structure 2, and an exhaust structure 3. The spray structure 2 is disposed at the top of the chamber 1 and is used to blow reactive gas or purge gas into the chamber 1. The exhaust structure 3 is disposed on the sidewall of the chamber 1 and is used to extract excess reactive gas or purge gas from the chamber 1.

[0058] Here, due to the reserved gap 4 between the spray structure 2 and the exhaust structure 3, for the Plasma Enhanced Chemical Vapor Deposition (PECVD) process, Plasma Enhanced Atomic Layer Deposition (PEALD) process or other thin film deposition processes, plasma will exist in the cavity 1. Plasma has diffusion characteristics and will not only form a thin film on the surface of the wafer 60, but also deposit a thin film on the surface of the spray structure 2 and the sidewall of the cavity 1, and even enter the reserved gap 4. In this way, if traditional cleaning methods are used, it may not be possible to completely clean the reaction products remaining in the gap, thereby affecting the cleanliness of the cavity 1 and even the product yield.

[0059] In order to overcome the above technical problems, the present disclosure provides a semiconductor processing chamber that can not only effectively remove the reaction products remaining in the gap, but also prevent the reaction products from flowing into the gap, thereby ensuring the cleanliness of the chamber 1 and improving the quality of thin film deposition. Figure 3 To the attached Figure 9 The structure, function and implementation process of the semiconductor processing chamber provided in this embodiment are illustrated by examples.

[0060] Combine Figures 3 to 9 As shown, an embodiment of the present disclosure provides a semiconductor processing chamber, comprising a reaction chamber 10, a spray assembly 20, an exhaust assembly 30, and an air blowing assembly 40. The spray assembly 20 comprises a top plate 21 disposed on the top of the reaction chamber 10 and a spray plate 22 disposed below the top plate 21; the exhaust assembly 30 is disposed on the side wall of the reaction chamber 10, with a first set gap 100 between the exhaust assembly 30 and the spray plate 22; the air blowing assembly 40 is disposed between the side wall of the reaction chamber 10 and the exhaust assembly 30, wherein the air blowing assembly 40 is provided with an air blowing port 411, and the gas blown out of the air blowing port 411 passes through the first set gap 100 between the spray plate 22 and the exhaust assembly.

[0061] In the semiconductor processing chamber provided by the embodiment of the present disclosure, a blowing assembly 40 is provided between the sidewall of the reaction chamber 10 and the exhaust assembly 30, and the gas blown out of the blowing port 411 of the blowing assembly 40 passes through the first set gap 100 between the shower plate 22 and the exhaust assembly. In this way, the reaction products within the first set gap 100 can be effectively cleaned. At the same time, during the thin film deposition process, the continuous blowing of air into the first set gap 100 by the blowing assembly 40 can also effectively prevent the reaction products from moving toward the side of the first set gap 100, thereby effectively improving the cleanliness of the chamber 1 and further improving the quality of thin film deposition.

[0062] Furthermore, the placement of the air blowing assembly 40 between the sidewall of the reaction chamber 10 and the exhaust assembly 30 can also effectively avoid the risk of plasma discharge. Furthermore, placing the air blowing assembly 40 on one side of the reaction chamber 10, compared to placing it on the side of the upper cover (spray assembly 20), can reduce the number of air passages through the chamber when purging the reaction products within the first set gap 100, thereby reducing sealing risks and assembly and disassembly difficulties.

[0063] In the disclosed embodiment, the blowing assembly 40 can also continuously blow air through the blowing port 411. This not only prevents the formation of reaction products within the first set gap 100, but also prevents the reaction products from flowing into the first set gap 100. Furthermore, the air pressure within the reaction chamber 10 can be fine-tuned, thereby improving the uniformity of thin film deposition.

[0064] In the embodiment of the present application, the first set gap 100 between the exhaust assembly 30 and the spray plate 22 is an annular space. To facilitate cleaning of reaction products in the annular space, in some embodiments, multiple air inlets 411 are provided, distributed along the circumference of the annular space. This allows for simultaneous blowing of the annular space by multiple air inlets 411, thereby improving cleaning effectiveness and efficiency.

[0065] Optionally, the number of air blowing ports 411 in the present application is n, where n is a positive integer greater than or equal to 1. For example, the number of air blowing ports 411 can be one, three, five, or seven, or two, four, or six. This can better achieve the diversion of the clean gas, thereby allowing the clean gas to pass through the annular space from different locations, thereby improving the cleaning effect and cleaning efficiency.

[0066] In the embodiments of the present application, the multiple air ports 411 are all arranged with equal caliber. For example, two, four, or six air ports 411 may be arranged with equal caliber along the circumference of the annular space, i.e., any two adjacent air ports 411 have the same caliber. This is not a limitation, as long as it can achieve air cleaning of the annular space.

[0067] Optionally, the caliber range of the air port 411 is [0.2mm, 0.9mm]. Optionally, the caliber range of the air port 411 is [0.3mm, 0.8mm]. Optionally, the caliber range of the air port 411 is [0.4mm, 0.7mm]. Optionally, the caliber range of the air port 411 is [0.5mm, 0.6mm].

[0068] In a specific application, the diameter of the air port 411 is 0.5 mm. Of course, in other applications, the diameter of the air port 411 can be selected from any diameter within [0.1 mm, 1 mm] and can be set according to actual needs.

[0069] In the embodiment of the present application, the plurality of air blowing ports 411 are arranged at equal intervals. For example, two, four, or six air blowing ports 411 may be arranged at equal intervals along the annular space, i.e., the distance between any two adjacent air blowing ports 411 is equal. This is not a limitation, as long as the annular space can be cleaned by air blowing.

[0070] In the embodiment of the present application, the spacing between the multiple air outlets 411 ranges from [5mm to 20mm]. Alternatively, the spacing can be selected from [5mm to 20mm] to ensure more uniform air flow at each location. Alternatively, the spacing between the multiple air outlets 411 ranges from [8mm to 18mm]. Alternatively, the spacing between the multiple air outlets 411 ranges from [10mm to 15mm].

[0071] In a specific application, the spacing between the plurality of air blowing ports 411 is 10 mm. Of course, in other applications, the spacing between the plurality of air blowing ports 411 can be selected from any distance within [5 mm, 20 mm] and can be set according to actual needs.

[0072] In some embodiments, the caliber range of the air blowing port 411 is [0.1 mm, 1 mm]. That is, it can be selected from [0.1 mm, 1 mm]. In this way, the air blowing port 411 can be small, have a good air uniformity effect, and while improving the cleaning effect, it can also prevent plasma from invading the air blowing assembly 40.

[0073] Combine Figures 3 to 8 As shown, in some embodiments, the air blowing port 411 includes a first air blowing port 412 facing the air extraction assembly 30 and / or a second air blowing port 413 facing the shower plate 22 .

[0074] In the embodiment of the present disclosure, the air blowing port 411 includes a first air blowing port 412 and / or a second air blowing port 413. Thus, air can be blown toward the first set gap 100 through the first air blowing port 412 of the air blowing assembly 40; or, air can be blown toward the first set gap 100 through the second air blowing port 413 of the air blowing assembly 40; or, alternatively, air can be blown toward the first set gap 100 simultaneously through the first air blowing port 412 and the second air blowing port 413 of the air blowing assembly 40.

[0075] Combine Figures 4 to 6 As shown, in some embodiments, a second set gap 200 is defined between the air blowing assembly 40 and the air extraction assembly 30, and the second set gap 200 is connected to the first set gap 100. Gas blown from the first air blowing port 412 of the air blowing assembly 40 can flow along the second set gap 200 toward the first set gap 100. The second set gap 200 has a value range of [1 mm, 2 mm]. Thus, the reserved second set gap 200 not only facilitates blowing toward the first set gap 100, but also avoids installation interference caused by machining dimensional errors, as well as potential cracking caused by differences in thermal conductivity and thermal expansion coefficients.

[0076] Combine Figures 4 to 6 As shown, in some embodiments, a third set gap 300 is defined between the air blowing assembly 40 and the shower plate 22, and the third set gap 300 is connected to the first set gap 100. Gas blown from the second air blowing port 413 of the air blowing assembly 40 can flow along the third set gap 300 toward the first set gap 100. The value range of the third set gap 300 is [1 mm, 2 mm]. Thus, the reserved third set gap 300 not only facilitates blowing toward the first set gap 100, but also avoids installation interference caused by machining dimensional errors, as well as potential cracking caused by differences in thermal conductivity and thermal expansion coefficients.

[0077] Combine Figures 3 to 8 As shown, in some embodiments, the blowing assembly 40 includes a blowing surface 41 and an air inlet surface 42 ; wherein the blowing surface 41 is provided with a blowing port 411 .

[0078] In the disclosed embodiment, when the first set gap 100 is an annular space, the blowing assembly 40 can be a blowing ring structure, that is, the blowing surface 41 is an annular structure, wherein the inner annular surface of the blowing assembly 40 is the blowing surface 41, and the outer annular surface of the blowing assembly 40 is the air inlet surface 42, which can be connected to an external air inlet device. Here, an air inlet channel 12 is provided on the side wall of the reaction chamber 10 and is connected to the air inlet surface 421. In this way, the air inlet channel 12 is connected to the external air inlet device to blow air into the first set gap 100 through the air inlet 411.

[0079] In the embodiment of the present disclosure, there is a set distance between the blowing surface 41 and the exhaust assembly 30 or the spray plate 22, which is convenient for installation and also convenient for blowing from the blowing port 411.

[0080] In some embodiments, the cross section of the blowing surface 41 is an arcuate surface or a polygonal surface. In this way, the blowing port 411 can be set at different positions according to different needs.

[0081] In the embodiment of the present disclosure, when the cross section of the air blowing surface 41 is an arcuate surface, air blowing ports 411 may be provided at both ends and in the middle of the arcuate surface, thereby increasing the air output.

[0082] In the embodiment of the present disclosure, the cross section of the blowing surface 41 can be a rectangular surface with an opening on one side, wherein the opening side is the air inlet surface 421, and the rectangular surface is provided with the blowing port 411. Here, the rectangular surface structure is adopted, which is simple in structure and easy to process.

[0083] In the disclosed embodiment, the blowing surface 41 has a first surface facing the exhaust assembly 30 and a second surface facing the spray plate 22. The first surface is provided with a first blowing port 412, so that gas from the first blowing port 412 can be blown along the gap between the blowing assembly 40 and the exhaust assembly 30 toward the first set gap 100; the second surface is provided with a second blowing port 413, so that gas from the second blowing port 413 can be blown along the gap between the blowing assembly 40 and the spray plate 22 toward the first set gap 100.

[0084] Combine Figure 3As shown, in the embodiment of the present disclosure, a heating plate 50 is provided in the reaction chamber 10, and the heating plate 50 can carry a wafer 60. Among them, a spray assembly 20 is provided on the top of the reaction chamber 10, and the spray assembly 20 includes a top plate 21, a spray plate 22 and an air intake block 23. The spray plate 22 is located directly above the heating plate 50, so that it is convenient to perform thin film deposition on the wafer 60. Here, the reaction gas or purge gas passes through the top plate 21 through the air intake block 23, and is then blown out from the spray plate 22. When it is necessary to clean the inside of the reaction chamber 10, the spray assembly 20 can be opened through the top plate 21.

[0085] In the embodiment of the present disclosure, Figure 3 and Figure 9 As shown, a wafer transfer channel 15 is also provided on the side wall of the reaction chamber 10 . The wafer 60 after thin film deposition can be transferred to the outside from the wafer transfer channel 15 , and the wafer 60 without thin film deposition can be transferred from the wafer transfer channel 15 to the reaction chamber 10 .

[0086] In the embodiment of the present disclosure, a gas extraction component 30 is provided on the side wall of the reaction chamber 10. Figures 4 to 6 As shown, the exhaust assembly 30 has a plurality of exhaust ports 311, and the plurality of exhaust ports 311 are arranged around the heating plate 50, so that the excess gas and reactants can be extracted in time. Figures 4 to 6 As shown, it can be adjusted as needed.

[0087] In the embodiment of the present disclosure, the exhaust assembly 30 and the spray plate 22 are both located around the heating plate 50. After the spray assembly 20 is closed, a first set gap 100 can be formed between the exhaust assembly 30 and the spray plate 22. Here, the blowing assembly 40 is arranged between the side wall of the reaction chamber 10 and the exhaust assembly 30. The blowing assembly 40 is provided with a blowing port 411, and the gas blown out of the blowing port 411 passes through the first set gap 100 between the spray plate 22 and the exhaust assembly 21, thereby blowing the reaction products in the first set gap 100 into the reaction chamber 10 and finally discharged from the side of the exhaust assembly 30.

[0088] In the embodiment of the present disclosure, the air extraction component 30 is an air extraction ring structure. Here, the air extraction component 30 has multiple surfaces, including annular planes, annular curved surfaces or annular bent surfaces, etc. The air extraction component 30 can be formed by enclosing multiple surfaces with each other.

[0089] In some specific embodiments, the exhaust assembly 30 includes a first surface, a second surface, and a third surface. A first predetermined gap 100 is formed between the first surface 311 and the shower plate 22. The second surface 321 is provided with an exhaust port 311 through which gas within the reaction chamber 10 is extracted. The third surface 323 serves as an exhaust surface 321. Correspondingly, an exhaust channel 11 is provided on the sidewall of the reaction chamber 10, communicating with the exhaust surface 321. The exhaust channel 11 is connected to an external exhaust device, allowing gas within the reaction chamber 10 to be discharged to the external exhaust device through the exhaust port 311 and the exhaust surface 321.

[0090] In the disclosed embodiment, the air extraction assembly 30 can be a split structure. This facilitates processing of the air extraction assembly 30. For example, the air extraction assembly 30 includes a first annular split body 31 and a second annular split body 32, wherein the first surface is the surface of the first annular split body 31, and the second and third surfaces are the surfaces of the second annular split body 32. Correspondingly, the air extraction port 311 is provided on the second surface, and the air extraction surface 321 is provided on the third surface.

[0091] Combine Figures 3 to 6 As shown, in some embodiments, a first annular mounting groove 16 is provided on the side wall of the reaction chamber 10, and the gas extraction assembly 30 is disposed in the first annular mounting groove 16. In this way, the gas extraction assembly 30 is conveniently fixed.

[0092] Combine Figures 3 to 6 As shown, in some embodiments, the exhaust assembly 30 is provided with a second annular mounting groove 322, and a third annular mounting groove is further provided on the groove wall of the first annular mounting groove 16; wherein, the blowing assembly 40 is provided in the second annular mounting groove 322 and / or the third annular mounting groove.

[0093] Optionally, in the embodiment of the present disclosure, if Figure 4 As shown, a first annular mounting groove 16 is provided on the side wall of the reaction chamber 10. In order to facilitate the fixing of the blowing assembly 40, a third annular mounting groove is further provided on the groove wall of the first annular mounting groove 16. The blowing assembly 40 is arranged in the third annular mounting groove. In this way, the blowing assembly 40 can be stably arranged between the side wall of the reaction chamber 10 and the exhaust assembly 30.

[0094] Optionally, in the embodiment of the present disclosure, if Figure 5 As shown, a second annular mounting groove 322 is provided on the exhaust assembly 30, facing the groove wall of the first annular mounting groove 16, and the blowing assembly 40 is disposed in the second annular mounting groove 322. In this way, the blowing assembly 40 can also be stably disposed between the side wall of the reaction chamber 10 and the exhaust assembly 30.

[0095] Alternatively, as Figure 6As shown, a third annular mounting groove is further provided on the groove wall of the first annular mounting groove 16, a second annular mounting groove 322 is provided on the vacuum assembly 30, the first part of the blowing assembly 40 is provided in the third annular mounting groove, and the second part of the blowing assembly 40 is provided in the second annular mounting groove 322.

[0096] Here, it is sufficient to ensure that the exhaust assembly 30 is disposed between the side wall of the reaction chamber 10 and the exhaust assembly 30 , and its specific position is not limited here.

[0097] In the disclosed embodiment, the blowing assembly 40 is disposed between the sidewall of the reaction chamber 10 and the exhaust assembly 30. The sidewall of the reaction chamber 10 is provided with a side liner 13 and a bottom liner 14 made of ceramic material. Thus, the exhaust assembly 30 separates the blowing assembly 40 from the side liner 13, thereby avoiding installation risks and the risk of expansion and cracking caused by direct contact between the blowing assembly 40 and the side liner 13.

[0098] Here, regardless of which of the above-mentioned configurations the blowing assembly 40 adopts, direct contact between the blowing assembly 40 and the side liner 13 is avoided, thereby preventing unnecessary installation risks and the risk of expansion and cracking. Furthermore, the blowing assembly 40 is located between the sidewall of the reaction chamber 10 and the exhaust assembly 30, thereby preventing the risk of plasma discharge.

[0099] In some embodiments, the material of the blowing assembly 40 includes a metal material.

[0100] In the embodiment of the present disclosure, the blowing component 40 is made of metal material, which is not only convenient for processing, but also has smaller processing size errors than other materials. Therefore, the processing accuracy is better. Here, other hard metals such as aluminum and stainless steel can be used.

[0101] In the embodiment of the present disclosure, the material of the first annular body 31 of the exhaust assembly 30 includes an inorganic non-metallic material, such as a ceramic material. This can further reduce the heat transfer from the reaction chamber 10 to the blowing assembly 40 and avoid the risk of expansion and cracking.

[0102] An embodiment of the present disclosure further provides a thin film deposition device, comprising the semiconductor processing chamber described in the aforementioned embodiment.

[0103] In the embodiment of the present disclosure, the thin film deposition equipment includes the above-mentioned semiconductor processing chamber. Referring to the above-mentioned embodiment, it has at least the beneficial effects brought by the technical solutions of the above-mentioned embodiment, which will not be described one by one here.

[0104] In the embodiments of the present disclosure, thin film deposition equipment includes, but is not limited to, etching equipment, chemical vapor deposition equipment, atomic layer deposition equipment, or physical vapor deposition equipment. However, it should be noted that the thin film deposition equipment of the present application is not limited thereto. After reading the following technical solution, it will be apparent to those skilled in the art that the invention can also be applied to other process equipment.

[0105] The above description and the accompanying drawings sufficiently illustrate the embodiments of the present disclosure to enable those skilled in the art to practice them. Other embodiments may include structural and other changes. The embodiments represent only possible variations. Unless expressly required, individual components and functions are optional, and the order of operations may vary. Portions and features of some embodiments may be included in or replace portions and features of other embodiments. The embodiments of the present disclosure are not limited to the structures described above and shown in the accompanying drawings, and various modifications and changes may be made without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.

Claims

1. A semiconductor processing chamber, characterized in that: include: reaction chamber; A spray assembly, comprising a top plate arranged on the top of the reaction chamber and a spray plate arranged below the top plate; An air extraction component is disposed on a side wall of the reaction chamber, and a first set gap is formed between the air extraction component and the spray plate; The blowing assembly is arranged between the side wall of the reaction chamber and the exhaust assembly, wherein the blowing assembly is provided with a blowing port, and the gas blown out of the blowing port passes through a first set gap between the spray plate and the exhaust assembly.

2. The semiconductor processing chamber according to claim 1, wherein There are multiple air blowing ports, and the multiple air blowing ports are distributed along the circumference of the first set gap.

3. The semiconductor processing chamber according to claim 2, wherein: The diameters of the multiple air blowing ports are all set to be equal in diameter.

4. The semiconductor processing chamber according to claim 3, wherein: The diameter range of the air outlet is [0.1mm, 1mm].

5. The semiconductor processing chamber according to claim 2, wherein: The multiple air blowing ports are arranged at equal intervals.

6. The semiconductor processing chamber according to claim 5, wherein: The spacing between the multiple blowing ports ranges from [5mm, 20mm].

7. The semiconductor processing chamber according to any one of claims 1 to 6, wherein: The air blowing port includes a first air blowing port facing the air extraction component and / or a second air blowing port facing the spray plate.

8. The semiconductor processing chamber according to claim 7, wherein: There is a second set gap between the blowing component and the exhaust component, and the second set gap is connected to the first set gap. The gas blown out from the first blowing port of the blowing component can flow along the second set gap to the first set gap.

9. The semiconductor processing chamber according to claim 8, wherein: The value range of the second set gap is [1mm, 2mm].

10. The semiconductor processing chamber according to claim 7, wherein: There is a third set gap between the air blowing component and the spray plate, and the third set gap is connected to the first set gap. The gas blown out from the second air blowing port of the air blowing component can flow along the third set gap to the first set gap.

11. The semiconductor processing chamber according to any one of claims 1 to 6, wherein: The air blowing component comprises an air blowing surface and an air inlet surface; wherein the air blowing surface is provided with an air blowing port.

12. The semiconductor processing chamber according to claim 11, wherein: The cross section of the blowing surface is an arc-shaped surface or a polygonal surface.

13. The semiconductor processing chamber according to any one of claims 1 to 6, wherein: A first annular mounting groove is provided on the side wall of the reaction chamber, and the gas extraction component is provided in the first annular mounting groove.

14. The semiconductor processing chamber according to claim 13, wherein: The air extraction component is provided with a second annular mounting groove, and a third annular mounting groove is further provided on the groove wall of the first annular mounting groove; wherein the air blowing component is provided in the second annular mounting groove and / or the third annular mounting groove.

15. The semiconductor processing chamber according to any one of claims 1 to 6, wherein: The material of the air blowing component includes a metal material.

16. A thin film deposition device, characterized in that: The semiconductor processing chamber comprises the semiconductor processing chamber according to any one of claims 1 to 15.

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