Magnetic field auxiliary electroplating system for integrated circuit

Abstract

The invention discloses an integrated circuit magnetic field auxiliary electroplating system which comprises electroplating equipment provided with a cathode assembly and an anode assembly which are opposite to each other; the magnetic field generator comprises a magnet N pole and a magnet S pole, the magnet N pole is arranged on one side of an anode assembly of the electroplating equipment, the magnet S pole is arranged on one side of a cathode assembly of the electroplating equipment, and the magnetic field generator generates a transverse magnetic field between the cathode assembly and the anode assembly. The invention belongs to the field of micro rapid prototyping processing, and particularly relates to a magnetic field auxiliary electroplating system for an integrated circuit. The transverse magnetic field is applied to adjust the electric field through the magnetic force, and according to the electromagnetic induction principle and the Larentz force law, liquid phase mass transfer is accelerated, the deposition speed and the limiting current density are improved, the time of reaction bubbles staying on the deposition surface is shortened, grains are refined, and the deposition quality is improved.

Description

Technical Field

[0001] The invention belongs to the technical field of micro rapid prototyping, and in particular relates to an integrated circuit magnetic field assisted electroplating system. Background Art

[0002] In integrated circuit manufacturing, the electroplating process is a critical step, crucially impacting product quality and production costs. The industry has long been committed to exploring effective methods to reduce electroplating costs and streamline the manufacturing process, aiming to enhance the overall competitiveness of integrated circuit manufacturing. Traditional electroplating technology faces challenges such as high equipment and consumables costs and complex equipment maintenance and repair. Furthermore, it presents numerous challenges in controlling electroplating quality, making it difficult to meet the demands of increasingly sophisticated integrated circuit manufacturing. To address these challenges, researchers are continuously exploring key factors that influence electroplating quality. Extensive literature research has identified magnetic fields as a simple and effective control method. Electrodeposition is a key process in forming metal interconnects in integrated circuit manufacturing. During electrodeposition, the depositing ions are driven toward the cathode by an electric field. Simultaneously, the magnetic field generates a Lorentz force, causing them to spiral forward along the magnetic flux lines under the combined action of the electric and magnetic fields. This characteristic significantly improves the localization of electrodeposition, enabling more precise control of metal deposition locations and meeting the manufacturing requirements of microstructures in integrated circuits. Magnetic field-assisted electroplating also offers numerous process advantages. This technology accelerates liquid-phase mass transfer, increases deposition rate and limiting current density, reduces the residence time of reactive bubbles on the deposition surface, and ultimately refines grains and improves deposition quality. This advantage makes it extremely valuable in the fabrication of micro-metal parts for micromechanical or micro-electromechanical systems. It can be used not only to create new miniature parts but also to repair and enhance their surfaces, making it a key technological tool in the field of micro-rapid prototyping. From the perspective of the electrodeposition system, the addition of a magnetic field reduces the viscosity of the deposition solution and increases its conductivity, promoting liquid-phase mass transfer near the electrode and enhancing the transport of charged particles. This series of changes reduces concentration polarization at the cathode surface, thinning the diffusion layer, and enabling electrodeposition at higher overpotentials. This accelerates nucleation but reduces growth, ultimately achieving surface grain refinement. These properties are crucial for improving the performance and reliability of integrated circuits, effectively increasing their integration density and stability. Furthermore, compared to traditional electroplating techniques, magnetic field electroplating utilizes simpler magnetic field generators, a longer service life, and lower consumables and equipment maintenance costs, offering significant advantages in reducing production costs. Based on the above characteristics, the magnetic field assisted electroplating system shows great application potential and development prospects in the field of integrated circuit manufacturing, and is expected to become an important force in promoting the advancement of integrated circuit manufacturing technology. Summary of the Invention

[0003] In view of the above situation, in order to overcome the defects of the prior art, the present invention provides an integrated circuit magnetic field assisted electroplating system, which effectively solves the problem that the production costs of equipment consumables and equipment maintenance and repair costs of different brands and designs on the market are several times different.

[0004] The technical solution adopted by the present invention is as follows: The present invention proposes an integrated circuit magnetic field assisted electroplating system, including an electroplating device provided with a cathode assembly and an anode assembly facing each other;

[0005] The magnetic field generator includes a magnet N pole and a magnet S pole, wherein the magnet N pole is arranged on one side of the anode assembly of the electroplating equipment, and the magnet S pole is arranged on one side of the cathode assembly of the electroplating equipment. The magnetic field generator generates a transverse magnetic field between the cathode assembly and the anode assembly.

[0006] Furthermore, the magnetic field generator applies a transverse magnetic field between the cathode and the anode by generating a magnetic field, and the transverse magnetic field generates magnetic lines of force.

[0007] Furthermore, an electric field is generated between the cathode and the anode, and the electric field includes a plurality of electric lines.

[0008] Furthermore, the magnetic lines of force, under the action of the Lorentz force, make the electric lines of force densely and evenly arranged, thereby increasing the intensity of the electric field.

[0009] Furthermore, the electroplating equipment includes vertical electroplating equipment and horizontal electroplating equipment.

[0010] Furthermore, the cathode assembly includes a wafer, and the anode assembly includes a titanium mesh or a soluble anode plate.

[0011] The beneficial effects achieved by the present invention using the above structure are as follows: This scheme proposes an integrated circuit magnetic field assisted electroplating system, which applies a transverse magnetic field to magnetically regulate the electric field, thereby reducing the influence of equipment geometric factors on the uniformity of coating thickness. This method accelerates liquid phase mass transfer, reduces concentration polarization, thins the diffusion layer, increases deposition rate and limiting current density, reduces the time that reaction bubbles stay on the deposition surface, refines grains, and improves deposition quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 A front view of the magnetic field of the magnetic field generator of the integrated circuit magnetic field assisted electroplating system proposed by the present invention;

[0013] Figure 2 A side view of the magnetic field configuration of the magnetic field generator of the integrated circuit magnetic field assisted electroplating system proposed by the present invention;

[0014] Figure 3 A schematic diagram of applying a transverse magnetic field to the vertical electroplating equipment of the integrated circuit magnetic field assisted electroplating system proposed by the present invention;

[0015] Figure 4 Schematic diagram of applying a transverse magnetic field to the horizontal electroplating equipment of the integrated circuit magnetic field assisted electroplating system proposed by the present invention.

[0016] Among them, 1. magnetic field generator; 2. N pole of magnet; 3. S pole of magnet; 4. cathode assembly; 5. anode assembly; 6. anode and cathode positions; 7. electric field; 8. magnetic field; 9. electric lines; 10. magnetic lines; 11. vertical electroplating equipment; 12. horizontal electroplating equipment.

[0017] The accompanying drawings are used to provide further understanding of the present invention and constitute a part of the specification. They are used to explain the present invention together with the embodiments of the present invention and do not constitute a limitation of the present invention. DETAILED DESCRIPTION

[0018] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments; based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0019] In the description of the present invention, it should be understood that terms such as "upper", "lower", "front", "back", "left", "right", "top", "bottom", "inside" and "outside" indicating directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, they should not be understood as limiting the present invention.

[0020] Example 1:

[0021] like Figures 1-4 As shown, the present invention proposes an integrated circuit magnetic field assisted electroplating system, including an electroplating device, which is provided with a relative cathode assembly 4 and an anode assembly 5; a magnetic field generator 1, including a magnet N pole 2 and a magnet S pole 3, the magnet N pole 2 is connected by an electric wire and arranged on the side of the anode assembly 5 of the electroplating device, and the magnet S pole 3 is connected by an electric wire and arranged on the side of the cathode assembly 4 of the electroplating device. The magnetic field generator 1 generates a transverse magnetic field 8 between the cathode assembly 4 and the anode assembly 5 through the magnet N pole 2 and the magnet S pole 3, so that the electroplating device is in a magnetic field environment. The transverse magnetic field 8 means that the test piece is placed between the two poles of the magnetic field and is at right angles to the direction of the magnetic field.

[0022] The magnetic field generator 1 applies a transverse magnetic field between the cathode 4 and the anode 5 by generating a magnetic field 8, and the transverse magnetic field generates magnetic lines of force 10;

[0023] An electric field 7 is generated between the cathode 4 and the anode 5, and the electric field 7 includes several electric lines 9. During the electroplating process, the electric field 7 interacts with the transverse magnetic field 8, so that the deposited ions are driven by the electric field force to move toward the cathode 4 and are affected by the Lorentz force, making a spiral forward motion along the direction of the magnetic lines of force, thereby improving the localization of the electrodeposition.

[0024] Under the repulsive effect of the Lorentz force, the magnetic lines of force 10 make the electric lines of force 9 densely and evenly arranged, thereby increasing the intensity of the electric field 7; the evenly distributed electric lines of force 9 can reduce the influence of the equipment geometry on the uniformity of the coating thickness, promote liquid phase mass transfer near the electrode, and accelerate the transport of deposited ions.

[0025] The magnetic field generator 1 provides the required magnetic field conditions for the entire electroplating system. The magnetic field it generates is distributed and transmitted through the connected magnet N-pole 2 and magnet S-pole 3. The magnet N-pole 2 is positioned on one side of the anode assembly end 5 of the vertical electroplating tank 11, and the magnet S-pole 3 is positioned on the other side of the anode assembly end 4. This arrangement places the vertical electroplating tank 11 in a magnetic field environment. The positional distribution of the anode 5 and cathode 4 in the vertical electroplating tank 11 allows an electric field to be formed between the cathode and cathode during the electroplating process. This electric field interacts with the magnetic field, causing the deposited ions to move toward the cathode while being driven by the electric field force. The magnetic field simultaneously generates a Lorentz force, causing the deposited ions to spiral forward along the magnetic flux lines under the combined action of the electric and magnetic fields. This improves the localization of the electrodeposition, accelerates liquid-phase mass transfer, increases the deposition rate and limiting current density, reduces the time that reactive bubbles remain on the deposition surface, refines the grains, and improves deposition quality.

[0026] Example 2:

[0027] The principle of the horizontal electroplating tank 12 is similar to that of the vertical electroplating tank 11. By applying a transverse magnetic field between the anode and cathode of the horizontal electroplating tank 12, the principle of electromagnetic induction and the Lorentz force law are utilized to achieve uniform electric lines and promote mass transfer, thereby expanding the control effect of process parameters and enhancing the effective control over electroplating quality.

[0028] A wafer, the target of electroplating, is placed on cathode 4. A titanium mesh or soluble anode plate is placed on anode 5. As a component of anode 5, the titanium mesh or soluble anode plate undergoes an oxidation reaction during the electroplating process, providing metal ions for electroplating. The titanium mesh has excellent conductivity and chemical stability, while the soluble anode plate dissolves and provides the corresponding metal ions according to the requirements of the electroplating process.

[0029] The above is the overall workflow of the present invention. Just repeat this step next time you use it.

[0030] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus.

[0031] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the appended claims and their equivalents.

[0032] The present invention and its embodiments are described above. This description is not restrictive. The drawings show only one embodiment of the present invention, and the actual structure is not limited thereto. In short, if a person skilled in the art is inspired by this and, without departing from the purpose of the present invention, designs structures and embodiments similar to this technical solution without inventiveness, they shall fall within the scope of protection of the present invention.

Claims

1. Integrated circuit magnetic field assisted electroplating system, characterized by: The invention comprises an electroplating device provided with a cathode assembly (4) and an anode assembly (5) facing each other; A magnetic field generator (1) comprises a magnet N pole (2) and a magnet S pole (3), wherein the magnet N pole (2) is arranged on one side of an anode assembly (4) of an electroplating device, and the magnet S pole (3) is arranged on one side of a cathode assembly (5) of the electroplating device, and the magnetic field generator (1) generates a transverse magnetic field (8) between the cathode assembly (4) and the anode assembly (5).

2. The integrated circuit magnetic field assisted electroplating system according to claim 1, characterized in that: The magnetic field generator (1) applies a transverse magnetic field between the cathode (4) and the anode (5) by generating a magnetic field (8), and the transverse magnetic field generates magnetic lines of force (10).

3. The integrated circuit magnetic field assisted electroplating system according to claim 2, characterized in that: An electric field (7) is generated between the cathode (4) and the anode (5), and the electric field (7) includes a plurality of electric field lines (9).

4. The integrated circuit magnetic field assisted electroplating system according to claim 3, characterized in that: The magnetic lines of force (10) cause the electric lines of force (9) to be densely and evenly arranged under the action of the Lorentz force, thereby increasing the intensity of the electric field (7).

5. The integrated circuit magnetic field assisted electroplating system according to claim 1, characterized in that: The electroplating equipment includes vertical electroplating equipment (11) and horizontal electroplating equipment (12).

6. The integrated circuit magnetic field assisted electroplating system according to claim 1, characterized in that: The cathode assembly (4) comprises a wafer, and the anode assembly (5) comprises a titanium mesh or a soluble anode plate.

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