Liquid phase epitaxy apparatus and method for growing thin films using the same

Abstract

The application relates to the technical field of liquid phase epitaxy growth, and discloses a liquid phase epitaxy tool and a method for growing a thin film by using the same. The tool comprises a base, a sliding strip, a detachable supporting component, a mother liquid plate and a cover plate. The detachable supporting component comprises a sleeved inner core and an outer ring. The mother liquid plate is provided with a mother liquid groove for containing mother liquid. The base is provided with a first groove matched with the sliding strip, and the upper surface of the base is provided with a second groove. The sliding strip is located in the first groove, and is provided with a through hole penetrating through the thickness. The detachable supporting component is located in the through hole, and the upper surface of the detachable supporting component is used for placing a substrate. The depth of the second groove is not less than the thickness of the substrate, the width of the second groove is matched with the thickness of the outer ring, and the outer ring falls into the second groove when the sliding strip moves to above the second groove, so that the edge of the substrate protrudes from the inner core. The mother liquid plate is located on the upper surface of the base and the sliding strip. The tool can disconnect the thin film from the surrounding when the mother liquid is in a molten state, and the yield of the thin film is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of liquid phase epitaxy growth, in particular to a liquid phase epitaxy device and a method for growing a thin film by using the same. BACKGROUND

[0002] Liquid phase epitaxy growth is a mature Ⅲ-Ⅴ or Ⅱ-Ⅵ compound semiconductor single crystal thin film growth technology, which has the characteristics of higher mobility and carrier lifetime of the grown semiconductor single crystal thin film, high deposition efficiency and low growth cost.

[0003] Horizontal boat pushing type liquid phase epitaxy growth is a main growth method, and the liquid phase epitaxy device is the most critical component of horizontal liquid phase epitaxy growth. The structure design of the graphite boat directly determines the quality of the liquid phase epitaxy thin film material. At present, the structure of the liquid phase epitaxy device is as shown in Figure 1 The liquid phase epitaxy device includes a base 1, a sliding strip 2, a cushion block 3, a mother liquid plate 4 and a cover plate 5. The mother liquid plate is provided with a mother liquid groove for containing mother liquid 6. The cover plate 5 is located on the upper surface of the mother liquid plate 4. The base 1 is provided with a groove. The sliding strip 2 is arranged in the groove of the base 1. The upper surface of the sliding strip 2 is flush with the upper surface of the base 1. The mother liquid plate 4 is located on the upper surfaces of the sliding strip 2 and the base 1. The sliding strip 2 can move in the groove of the base 1 opposite to the mother liquid groove. The sliding strip 2 is provided with a substrate groove. The cushion block 3 is located in the substrate groove. The height of the cushion block 3 is less than the thickness of the sliding strip 2. The difference between the height of the cushion block 3 and the thickness of the sliding strip 2 is the thickness of the substrate 6. The substrate 7 is placed above the cushion block 3.

[0004] After the epitaxial growth of the thin film is completed, the temperature of the graphite boat is reduced to room temperature, and the thin film is taken out of the substrate groove. When taking out the film, the cushion block needs to be gently pressed upward once, so that the thin film is lifted above the upper surface of the sliding strip. Then the thin film is gently pushed away from the cushion block, and the film taking is completed. There is a small amount of residual mother liquid condensed at the gap between the thin film and the substrate groove, which adheres the thin film and the sliding strip together. Since the thin film is brittle, has poor toughness and is generally thin, uneven stress or slight collision can easily cause cracks at the four edges of the thin film, even directly break the film, causing the film to be scrapped. During the growth process, part of the mother liquid inevitably flows into the gap between the substrate and the substrate groove, forming adhesion between the substrate groove and the substrate. When the film is pressed upward, the adhesion part of the thin film inevitably has uneven stress, thereby tearing the substrate and the epitaxial thin film, forming local cracks, or even directly breaking, which seriously affects the integrity of the thin film and leads to a decrease in the process yield.

[0005] Therefore, how to solve the above technical problems should be the focus of attention of those skilled in the art. SUMMARY

[0006] The application aims to provide a liquid phase epitaxy device and a method for growing thin films by liquid phase epitaxy, so as to improve the yield of thin films grown by liquid phase epitaxy.

[0007] To solve the above technical problems, the application provides a liquid phase epitaxy device, comprising:

[0008] a base, a slide bar, a detachable support component, a mother liquid plate and a cover plate, the detachable support component comprises an inner core and an outer ring which are sleeved, and the mother liquid plate is provided with a mother liquid groove for containing mother liquid.

[0009] The base is provided with a first groove matched with the slide bar, and the upper surface of the base is provided with a second groove.

[0010] The slide bar is located in the first groove, the slide bar is provided with a through hole penetrating through the thickness, the detachable support component is located in the through hole, and the upper surface of the detachable support component is used for placing a substrate.

[0011] The depth of the second groove is not less than the thickness of the substrate, the width of the second groove matches the thickness of the outer ring, and the outer ring falls into the second groove when the slide bar moves above the second groove, so that the edge of the substrate protrudes from the inner core.

[0012] The mother liquid plate is located on the upper surface of the base and the slide bar, and the cover plate is located on the upper surface of the mother liquid plate.

[0013] Optionally, the inner core and the outer ring are in a separated structure.

[0014] Optionally, the inner core comprises a support block, and the outer ring comprises a support ring.

[0015] Optionally, the inner core and the outer ring are connected, and the inner core and the outer ring can slide relative to each other.

[0016] Optionally, one of the outer surface of the inner core and the inner surface of the outer ring is provided with a slide, and the other is provided with a protrusion matched with the slide.

[0017] Optionally, the upper surface of the outer ring has a stepped surface, the height of the outer ring is equal to the thickness of the slide bar, the height of the inner core is less than the height of the outer ring, and the height difference between the inner core and the outer ring and the height difference of the stepped surface are equal to the thickness of the substrate.

[0018] Optionally, at least one end of the slide bar is provided with an opening and / or a support column.

[0019] Optionally, the application further comprises:

[0020] a fastener for fixing the base, the mother liquid plate and the cover plate.

[0021] Optionally, the fastener comprises a bolt, and the base, the mother liquid plate and the cover plate are provided with screw holes.

[0022] The application also provides a method for growing a thin film by liquid phase epitaxy, which uses any of the liquid phase epitaxy tooling described above, and comprises:

[0023] Placing a substrate and a mother liquid in the liquid phase epitaxy tooling;

[0024] Placing the liquid phase epitaxy tooling in an epitaxy furnace and heating the epitaxy furnace to melt the mother liquid in the mother liquid tank;

[0025] Cooling the epitaxy furnace to the crystallization point temperature of the mother liquid;

[0026] Pulling the slide to position the substrate below the mother liquid tank for epitaxial growth, and growing a thin film on the surface of the substrate;

[0027] When epitaxial growth is complete and the mother liquid is still in a molten state, pulling the slide again to separate the mother liquid from the substrate;

[0028] Continuing to pull the slide so that the outer ring falls into the second groove of the base, the substrate is in a state of being suspended at the edge region, and the substrate and the thin film on the upper surface of the substrate are automatically separated from the surroundings.

[0029] The liquid phase epitaxy tooling provided by the application comprises a base, a slide, a detachable support component, a mother liquid plate and a cover plate, the detachable support component comprises a sleeved inner core and an outer ring; the mother liquid plate is provided with a mother liquid tank for containing a mother liquid; the base is provided with a first groove matched with the slide, and the upper surface of the base is provided with a second groove; the slide is located in the first groove, the slide is provided with a through hole penetrating through the thickness, the detachable support component is located in the through hole, and the upper surface of the detachable support component is used for placing a substrate; the depth of the second groove is not less than the thickness of the substrate, the width of the second groove matches the thickness of the outer ring, and the outer ring falls into the second groove when the slide moves above the second groove, so that the edge of the substrate protrudes from the inner core; the mother liquid plate is located on the upper surfaces of the base and the slide, and the cover plate is located on the upper surface of the mother liquid plate.

[0030] It can be seen that the liquid phase epitaxy device provided by the application comprises a base, a slide, a detachable supporting component, a mother liquid plate and a cover plate. The detachable supporting component comprises an inner core and an outer ring. The slide is arranged in the first groove of the base and can slide in the first groove. The mother liquid groove of the mother liquid plate can hold mother liquid. The thin film is epitaxially grown on the surface of the substrate arranged on the detachable supporting component. After the growth, the slide is pulled when the mother liquid is in a molten state. The detachable supporting component and the substrate move together with the slide. The base is further provided with a second groove matched with the outer ring. When the outer ring moves above the second groove, the outer ring falls into the second groove. Since the depth of the second groove is not less than the thickness of the substrate, the peripheral edge of the substrate is in a suspended state and completely separated from the surrounding components. At the same time, the separation of the thin film from the surrounding components is completed. Since the mother liquid of the thin film and the surrounding components is still in a molten state when the thin film is separated from the surrounding components, the thin film can be easily separated from the surrounding components. The operation of taking the film by pressing the pad block after the mother liquid is completely cooled is avoided. The film cracking and cracking problem is solved. The integrity of the thin film is improved.

[0031] In addition, the application further provides a method for growing a thin film by liquid phase epitaxy, which has the above advantages. BRIEF DESCRIPTION OF DRAWINGS

[0032] In order to more clearly illustrate the technical solutions of the embodiments of the application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiment or prior art description. Obviously, the drawings in the following description are only some embodiments of the application. Those skilled in the art can also obtain other drawings according to these drawings without any creative effort.

[0033] Figure 1 It is a sectional view of the liquid phase epitaxy device in the prior art.

[0034] Figure 2 It is a structural schematic view of the base in the liquid phase epitaxy device provided by the embodiment of the application.

[0035] Figure 3 It is a structural schematic view of the slide in the liquid phase epitaxy device provided by the embodiment of the application.

[0036] Figure 4 It is a structural schematic view of the mother liquid plate in the liquid phase epitaxy device provided by the embodiment of the application.

[0037] Figure 5 It is a structural schematic view of the cover plate in the liquid phase epitaxy device provided by the embodiment of the application.

[0038] Figure 6 It is a structural schematic view of an outer ring in the liquid phase epitaxy device provided by the embodiment of the application.

[0039] Figure 7 A structure schematic diagram of a substrate on an inner core in a liquid phase epitaxy device provided by an embodiment of the present application;

[0040] Figure 8 A state change schematic diagram of the liquid phase epitaxy device provided by an embodiment of the present application when pulling the slide;

[0041] In the figure, 1, base, 2, slide, 3, cushion block, 4, mother liquid plate, 5, cover plate, 6, mother liquid, 7, substrate, 8, inner core, 9, outer ring, 10, screw hole, 11, first groove, 12, second groove, 21, opening, 41, mother liquid groove. DETAILED DESCRIPTION

[0042] In order to make the person skilled in the art better understand the present application, the present application will be further described in detail below in combination with the drawings and specific embodiments. Obviously, the described embodiments are only part of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by the person skilled in the art without making creative efforts fall within the scope of protection of the present application.

[0043] In the following description, many specific details are set forth in order to provide a thorough understanding of the present application, but the present application can also be implemented in other ways different from those described herein, and the person skilled in the art can make similar generalizations without departing from the connotation of the present application, therefore the present application is not limited to the specific embodiments disclosed below.

[0044] The process of liquid phase epitaxy growth using the current liquid phase epitaxy device generally includes three steps of boat loading, epitaxial growth and boat taking. Among them, 1) boat loading: according to the required film component, a certain component ratio of growth mother liquid is weighed in the mother liquid groove, and the substrate is placed in the substrate groove. 2) Epitaxial growth: automatically controlled by the device, the device furnace body rises and falls according to the set temperature program, the graphite boat is heated to completely melt the mother liquid, and then a certain cooling rate is controlled to slowly cool down, the solubility of solute in liquid solvent decreases with the decrease of temperature, when reaching the saturation state, the slide is pulled to move the substrate to the position directly below the mother liquid, and then a suitable cooling process is used to control the growth rate, and the thin film is crystallized and grown on the surface of the substrate, after the epitaxial growth is completed, the slide is pushed again to push the substrate away from the position below the mother liquid. 3) Boat taking: after the temperature drops to room temperature, the thin film is taken out of the substrate groove, and there is usually a small amount of mother liquid solidified at the gap between the thin film and the substrate groove, which makes the thin film and the slide stick together. When taking the film, the cushion block is gently pushed up, the thin film is lifted above the upper surface of the slide, and then the thin film is gently pushed away from the cushion block, and the epitaxial material taking is completed.

[0045] As described in the background section, after the thin film is grown using the current liquid phase epitaxy device, local cracks or even direct fragmentation are easily caused when the film is taken out, which seriously affects the integrity of the thin film and leads to a decrease in the process yield.

[0046] Therefore, the present application provides a liquid phase epitaxy device, which comprises Figures 2 to 7 , and specifically comprises

[0047] a base 1, a slide bar 2, a detachable supporting component, a mother liquid plate 4 and a cover plate 5, wherein the detachable supporting component comprises a sleeve inner core 8 and an outer ring 9; the mother liquid plate 4 is provided with a mother liquid groove 41 for containing mother liquid.

[0048] The base 1 is provided with a first groove 11 matched with the slide bar 2, and the upper surface of the base 1 is provided with a second groove 12.

[0049] The slide bar 2 is located in the first groove 11, and the slide bar 2 is provided with a through hole penetrating through the thickness, and the detachable supporting component is located in the through hole, and the upper surface of the detachable supporting component is used for placing a substrate 7.

[0050] The depth of the second groove 12 is not less than the thickness of the substrate 7, the width of the second groove 12 matches the thickness of the outer ring 9, and the outer ring 9 falls into the second groove 12 when the slide bar 2 moves above the second groove 12, so that the edge of the substrate 7 protrudes from the inner core 8.

[0051] The mother liquid plate 4 is located on the upper surface of the base 1 and the slide bar 2, and the cover plate 5 is located on the upper surface of the mother liquid plate 4.

[0052] The first groove 11 extends along the length direction of the base 1, the width of the slide bar 2 is equal to the width of the first groove 11, and the thickness of the slide bar 2 is equal to the depth of the first groove 11. The second groove 12 is distributed at the bottom of the first groove 11.

[0053] It should be noted that the shape of the detachable supporting component is not limited in the present application and can be set as required.

[0054] For example, the shape of the detachable supporting component can be cylindrical, in which case the inner core 8 is cylindrical and the outer ring 9 is a circular ring; or the shape of the detachable supporting component can be cuboid, in which case the inner core 8 is cuboid and the outer ring 9 is a cuboid ring.

[0055] The outer ring 9 is in contact with the inner wall of the through hole on the slide bar 2, and the lower surface of the outer ring 9 is flush with the lower surface of the inner core 8.

[0056] The second groove 12 is shaped to match the shape of the outer ring 9, for example, when the outer ring 9 is shaped as a circular ring, the second groove 12 is shaped as a circle, when the outer ring 9 is shaped as a rectangular ring, the second groove 12 is shaped as a rectangle.

[0057] The depth of the second groove 12 can be equal to the thickness of the substrate 7, or the depth of the second groove 12 is greater than the thickness of the substrate 7, the purpose is that when the outer ring 9 falls into the second groove 12, the height of the inner core 8 remains unchanged, so that the substrate 7 can be completely higher than the outer ring 9, and the thin film can be completely separated from the surrounding mother liquor in a molten state, and the wafer can be easily taken out.

[0058] In order to ensure that the detachable support component is not affected by the horizontal movement of the slide bar 2 on the base 1, the thickness of the outer ring 9 and the width of the second groove 12 should be as small as possible under the condition of meeting the processing requirements. For example, the thickness of the outer ring 9 and the width of the second groove 12 can be 2mm, which is much smaller than the size of the substrate 7 and the inner core 8. When the slide bar 2 is pulled during the process, the horizontal movement of the inner core 8 and the outer ring 9 will not be affected by the second groove 12.

[0059] It should be noted that the structure of the detachable support component is not limited in the present application, and can be set as needed.

[0060] As an implementation manner, the inner core 8 and the outer ring 9 are in a separated structure. That is, the inner core 8 and the outer ring 9 are independent components. When the inner core 8 or the outer ring 9 is damaged, the damaged component can be replaced independently, without the need to replace the inner core 8 and the outer ring 9 entirely, thereby saving cost.

[0061] In an embodiment of the present application, the inner core 8 comprises a support block, and the outer ring 9 comprises a support ring, as shown in Figure 6 and Figure 7 .

[0062] The projection of the inner core 8 on the base 1 is located within the projection range of the substrate 7 on the base 1, so as to facilitate the direct clamping of the substrate 7 by tweezers. The distance between the four peripheral edges of the inner core 8 and the four peripheral edges of the substrate 7 can be 1mm.

[0063] As another implementation manner, the inner core 8 and the outer ring 9 are connected, and the inner core 8 and the outer ring 9 can slide relative to each other. The inner core 8 and the outer ring 9 are connected together, and can be simultaneously put into the through hole during use, thereby facilitating installation.

[0064] In an embodiment of the present application, one of the outer surface of the inner core 8 and the inner surface of the outer ring 9 is provided with a slide, and the other surface is provided with a protrusion matched with the slide. The protrusion is clamped in the slide and can slide in the slide.

[0065] For example, a slide can be arranged on the outer surface of the inner core 8, and a protrusion can be arranged on the inner surface of the outer ring 9; or a protrusion can be arranged on the outer surface of the inner core 8, and a slide can be arranged on the inner surface of the outer ring 9.

[0066] The outer surface of the inner core 8 is the surface close to the outer ring 9, and the inner surface of the outer ring 9 is the surface close to the inner core 8.

[0067] The materials of the base 1, the slide 2, the detachable supporting component, the mother liquid plate 4 and the cover plate 5 can be graphite, i.e., the liquid phase epitaxy tool is a graphite tool, which has the advantages of high chemical stability, good thermal stability and multiple reusability after cleaning and maintenance.

[0068] The liquid phase epitaxy tool of the embodiment includes a base 1, a slide 2, a detachable supporting component, a mother liquid plate 4 and a cover plate 5. The detachable supporting component includes an inner core 8 and an outer ring 9. The slide 2 is arranged in and can slide in the first groove 11 of the base 1. The mother liquid groove 41 of the mother liquid plate 4 can hold mother liquid, and a thin film is grown on the surface of the substrate 7 located on the detachable supporting component by epitaxy. After the growth, when the mother liquid is in a molten state, the slide 2 is pulled, and the detachable supporting component and the substrate 7 move together with the slide 2. The base 1 is further provided with a second groove 12 matched with the outer ring 9. When the outer ring 9 moves above the second groove 12, the outer ring 9 falls into the second groove 12. Since the depth of the second groove 12 is not less than the thickness of the substrate 7, the four peripheral edges of the substrate 7 reach a suspended state and are completely separated from the surrounding components, and at the same time, the separation of the thin film from the surrounding components is completed. Since the mother liquid of the thin film and the surrounding components is still in a molten state when the thin film is separated from the surrounding components, the thin film can be easily separated from the surrounding components, avoiding the operation of taking the film by pressing the pad block after the mother liquid is completely cooled, solving the problems of film cracking and film breaking and improving the integrity of the thin film.

[0069] On the basis of the above embodiment, in an embodiment of the present application, please refer to Figure 6 The upper surface of the outer ring 9 has a stepped surface, the height of the outer ring 9 is equal to the thickness of the slide 2, and the height of the inner core 8 is less than the height of the outer ring 9. The height difference between the inner core 8 and the outer ring 9 and the height difference of the stepped surface are equal to the thickness of the substrate 7.

[0070] The upper surface of the outer ring 9 includes two surfaces with different heights. The height of the outer ring 9 is the distance between the highest surface of the upper surface and the lower surface, i.e., the highest surface of the upper surface of the outer ring 9 is flush with the upper surface of the slide 2. The upper surface of the inner core 8 is flush with the lower surface of the upper surface of the outer ring 9.

[0071] When the substrate 7 is placed on the upper surface of the inner core 8, the upper surface of the substrate 7 is flush with the upper surface of the outer ring 9. When the outer ring 9 falls into the second groove 12, the height change of the outer ring 9 is as followsFigure 8 As shown.

[0072] In this embodiment, before the outer ring 9 falls into the second groove 12, the substrate 7 is located within the range of the outer ring 9 and moves with the movement of the outer ring 9. When the outer ring 9 falls into the second groove 12, the edge of the epitaxially grown film on the substrate 7 is automatically disconnected from the outer ring 9.

[0073] On the basis of the above-mentioned embodiments, in an embodiment of the present application, the height of the outer ring 9 is the same as the height of the inner core 8, and the height of the outer ring 9 and the inner core 8 is lower than the thickness of the slide bar 2, and the difference between the height of the outer ring 9 and the inner core 8 and the thickness of the slide bar 2 is the thickness of the substrate 7. When the outer ring 9 falls into the second groove 12, the edge of the epitaxially grown film on the substrate 7 is automatically disconnected from the sidewall of the through hole.

[0074] On the basis of any of the above-mentioned embodiments, in an embodiment of the present application, at least one end of the slide bar 2 is provided with an opening 21 and / or a support.

[0075] Either end of the slide bar 2 can be provided with an opening 21 and / or a support, or both ends of the slide bar 2 are respectively provided with an opening 21 and / or a support, or one end of the slide bar 2 is provided with an opening 21 and the other end is provided with a support.

[0076] The opening 21 and / or the support are provided to facilitate the sliding of the slide bar 2. For example, a hook can be hooked on the opening 21 and / or the support, and then the slide bar 2 can be pulled to move.

[0077] On the basis of any of the above-mentioned embodiments, in an embodiment of the present application, the liquid phase epitaxial tool can further comprise:

[0078] A fastener is used to fix the base 1, the mother liquid plate 4 and the cover plate 5.

[0079] The fastener is used to tightly connect the base 1, the mother liquid plate 4 and the cover plate 5, so as to facilitate the movement of the epitaxial tool and avoid the situation that the mother liquid spills out of the mother liquid groove 41 after being put in.

[0080] It should be noted that the fastener is not specifically limited in the present application, as long as it can tightly connect the base 1, the mother liquid plate 4 and the cover plate 5.

[0081] As an implementable manner, the fastener comprises a bolt, and the base 1, the mother liquid plate 4 and the cover plate 5 are provided with screw holes 10.

[0082] After the base 1, the slide bar 2, the mother liquid plate 4 and the cover plate 5 are stacked, the bolt is screwed into the screw hole 10 for fastening, which is very simple and convenient to operate.

[0083] As another implementable manner, the fastener can further include two clamps, a bolt and a nut, the two clamps are provided with screw holes 10, after the base 1, the slide bar 2, the mother liquid plate 4 and the cover plate 5 are stacked, one clamp is arranged on the upper surface of the cover plate 5, and the other clamp is arranged on the lower surface of the base 1, the bolt passes through the screw holes 10 of the two clamps, and the nut is cooperated to be fastened.

[0084] The application further provides a method for growing a thin film by liquid phase epitaxy, which adopts the liquid phase epitaxy tooling according to any one of the above embodiments, and comprises the following steps:

[0085] Step S101: placing a substrate and a mother liquid in the liquid phase epitaxy tooling.

[0086] The mother liquid is located in the mother liquid groove of the liquid phase epitaxy tooling, and the mother liquid is determined according to the material to be grown, for example, when it is required to grow a mercury cadmium telluride, the mother liquid is the mother liquid required for growing the mercury cadmium telluride, and when it is required to grow a gallium arsenide thin film, the mother liquid is the mother liquid required for growing the gallium arsenide.

[0087] The substrate is located on the upper surface of the inner core of the liquid phase epitaxy tooling.

[0088] Step S102: placing the liquid phase epitaxy tooling in an epitaxial furnace and heating the epitaxial furnace, so that the mother liquid in the mother liquid groove is melted.

[0089] Step S103: cooling the epitaxial furnace to the crystallization point temperature of the mother liquid.

[0090] Step S104: pulling the slide bar, so that the substrate is located below the mother liquid groove for epitaxial growth, and a thin film is grown on the surface of the substrate.

[0091] Step S105: when the epitaxial growth is completed and the mother liquid is still in a molten state, the slide bar is pulled again, so that the mother liquid is separated from the substrate.

[0092] Step S106: continuing to pull the slide bar, so that the outer ring falls into the second groove of the base, the edge region of the substrate is in a suspended state, and the substrate and the thin film on the upper surface of the substrate are automatically separated from the surrounding.

[0093] The method in the embodiment separates the thin film from the tooling when the epitaxial growth is completed and the mother liquid is still in a molten state, that is, the separation of the thin film from the tooling is completed during the liquid phase epitaxial growth, and the edge region of the substrate is in a suspended state, so that the whole substrate can be directly clamped by a clamp for subsequent wafer taking, the operation of pressing upward for wafer taking after the mother liquid is completely cooled is avoided, and the problems of cracks and wafer breaking caused by uneven force during wafer taking are solved, the integrity of the thin film is ensured, and the yield of liquid phase epitaxial growth is improved.

[0094] Various embodiments are described herein with reference to the drawings, wherein each embodiment is shown in a progressive manner. Each embodiment is described in detail to highlight the differences from other embodiments, and the same or similar parts between various embodiments can be mutually referred to.

[0095] The liquid phase epitaxy device and the method for growing a thin film by liquid phase epitaxy are described in detail above. The principles and implementation manners of the present application are described by applying specific examples. The above description of the embodiments is only used to help understand the scheme of the present application and its core idea. It should be pointed out that, for those skilled in the art, some improvements and modifications can be made to the present application without departing from the principles of the present application, and these improvements and modifications also fall within the protection scope of the present application.

Claims

1. A liquid phase epitaxial tool, characterized in that: include: A base, a slide bar, a detachable support component, a mother liquid plate and a cover plate, wherein the detachable support component includes a sleeved inner core and an outer ring; the mother liquid plate is provided with a mother liquid tank for holding the mother liquid; The base is provided with a first groove matched with the slide bar, and the upper surface of the base is provided with a second groove; The slide bar is located in the first groove, the slide bar is provided with a through hole extending through the thickness thereof, the detachable support component is located in the through hole, and the upper surface of the detachable support component is used for placing a substrate; The depth of the second groove is not less than the thickness of the substrate, and the width of the second groove matches the thickness of the outer ring. When the slider moves above the second groove, the outer ring falls into the second groove, so that the edge of the substrate protrudes from the inner core. The mother liquid plate is located on the upper surface of the base and the slide bar, and the cover plate is located on the upper surface of the mother liquid plate; The upper surface of the outer ring has a step surface, the height of the outer ring is equal to the thickness of the slider, the height of the inner core is less than the height of the outer ring, and the height difference between the inner core and the outer ring and the height difference of the step surface are both equal to the thickness of the substrate.

2. The liquid phase epitaxial tooling according to claim 1, characterized in that: The inner core and the outer ring are separate structures.

3. The liquid phase epitaxial tooling according to claim 2, characterized in that: The inner core includes a support block, and the outer ring includes a support ring.

4. The liquid phase epitaxial tooling according to claim 1, characterized in that: The inner core and the outer ring are connected, and the inner core and the outer ring are relatively slidable.

5. The liquid phase epitaxial tooling according to claim 4, characterized in that: Of the outer surface of the inner core and the inner surface of the outer ring, one surface is provided with a slideway, and the other surface is provided with a protrusion matching the slideway.

6. The liquid phase epitaxial tooling according to claim 1, characterized in that: At least one end of the slide bar is provided with an opening and / or a support.

7. The liquid phase epitaxial tool according to any one of claims 1 to 6, characterized in that: Also includes: A fastener is used to fix the base, the mother liquid plate and the cover plate.

8. The liquid phase epitaxial tooling according to claim 7, characterized in that: The fasteners include bolts, and the base, the mother liquid plate and the cover plate are provided with screw holes.

9. A method for growing a thin film by liquid phase epitaxial growth, characterized in that: The liquid phase epitaxial tooling according to any one of claims 1 to 8 comprises: placing the substrate and the mother liquid in the liquid phase epitaxy tool; Placing the liquid phase epitaxy device in an epitaxial furnace and heating the epitaxial furnace to melt the mother liquid in the mother liquid tank; Cooling the epitaxial furnace to the mother liquid crystallization point temperature; Pulling the slider to position the substrate below the mother liquid tank for epitaxial growth, and growing a thin film on the surface of the substrate; When the epitaxial growth is completed and the mother liquid is still in a molten state, the slider is pulled again to separate the mother liquid from the substrate; Continue to pull the slide bar so that the outer ring falls into the second groove of the base, the edge area around the substrate is in a suspended state, and the substrate and the film located on the upper surface of the substrate are automatically separated from the surrounding area.

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