Method for improving gluing arrow shadow

Abstract

The invention discloses a method for improving a gluing arrow shadow. The method comprises the following steps: S1, providing a plurality of product sheets before a photoetching process, wherein the number of the product sheets is at least three; s2, gluing is conducted, specifically, gluing is conducted under the same gluing condition, so that a plurality of gluing pieces are obtained; s3, exposure: exposing the plurality of glued sheets by using layouts with different line width sizes, and enabling other exposure conditions to be the same so as to obtain a plurality of exposure sheets; s4, developing: developing the plurality of exposed exposure sheets under the same developing condition to obtain a plurality of developing sheets; and S5, forming a finished product from each display sheet through a subsequent process, testing the finished product, observing a display image at a test end, determining the influence of different line width sizes of the layout on the arrow shadow, and determining optimized parameters and an optimized process of batch production of the photoetching process. Therefore, the arrow shadow defect can be effectively improved.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductors, and more particularly to a method for improving glue-coated arrow shadows. Background Art

[0002] Finished semiconductor products are typically inspected at the test site. A display monitor is used to observe whether any differences in brightness appear in the displayed area. This difference is then replicated on the wafer to determine if radial patterns (i.e., arrow shadows, also known as diagonal patterns) that match the photoresist spin coating are present. If arrow shadows are present, improvements to the photolithography process are needed to reduce or eliminate them. Summary of the Invention

[0003] In view of the problems existing in the background technology, an object of the present disclosure is to provide a method for improving the glue-coated arrow shadow, which can effectively improve the arrow shadow defects.

[0004] Therefore, a method for improving the glue-coated arrow shadow includes the following steps: S1, providing multiple product sheets before the photolithography process, the multiple sheets being at least three; S2, glue coating, using the same glue coating conditions to obtain multiple glue-coated sheets; S3, exposure, exposing the multiple glue-coated sheets after glue coating using layouts with different line width sizes, and the other exposure conditions are the same to obtain multiple exposed sheets; S4, development, developing the multiple exposed sheets after exposure using the same development conditions to obtain multiple developer sheets; S5, each developer sheet is formed into a finished product through a subsequent process, the finished product is tested and the display image at the test end is observed to determine the impact of different line width sizes of the layout on the arrow shadow and determine the optimized parameters and optimized process for mass production of the photolithography process.

[0005] The beneficial effects of the present disclosure are as follows: In the method for improving the glue-coated arrow shadow according to the present disclosure, a plurality of glue-coated sheets are subjected to an exposure process using layouts with different line widths while maintaining the same exposure conditions. The effect of different layout line widths on the arrow shadow is determined by testing finished products and observing the displayed images at the test end. The optimized parameters and process for mass production of the lithography process are determined. As verified by the testing process, increasing the layout line width can effectively improve the arrow shadow defect, thereby improving the finished product yield. That is, while ensuring the performance of the finished product, increasing the layout line width can effectively improve the arrow shadow defect, thereby improving the finished product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1 It is a schematic diagram of the structural relationship between the mask, the film and the grain.

[0007] Figure 2 This is the display image of the finished product corresponding to the layout design line width of 250±20nm in Example 1 at the test end.

[0008] Figure 3This is the display image of the finished product corresponding to the layout design line width of 280±20nm in Example 1 at the test end.

[0009] Figure 4 This is the display image of the finished product corresponding to the layout design line width of 310±20nm in Example 1 at the test end. DETAILED DESCRIPTION

[0010] It will be understood that the disclosed embodiments are merely examples of the present disclosure, which can be implemented in various forms. Therefore, the specific details disclosed herein should not be interpreted as limiting, but merely as a basis for the claims and as a representative basis for teaching one skilled in the art to variously implement the present disclosure.

[0011] [Methods to improve glued arrow shadows]

[0012] Reference Figure 1 The method for improving the glued arrow shadow according to the present disclosure comprises the steps of:

[0013] S1, providing multiple product wafers before the photolithography process, where multiple wafers are at least three;

[0014] S2, gluing, gluing under the same gluing conditions to obtain multiple gluing sheets;

[0015] S3, exposure, multiple coated sheets after coating are exposed using patterns with different line widths, with other exposure conditions being the same to obtain multiple exposed sheets;

[0016] S4, developing, developing the multiple exposed films using the same developing conditions to obtain multiple developed films;

[0017] S5, each display film is transformed into a finished product through the subsequent process, the finished product is tested and the display image at the test end is observed to determine the impact of different line width sizes of the layout on the arrow shadow and determine the optimized parameters and optimized process for mass production of the lithography process.

[0018] In the method for improving glue-coated arrow shadows disclosed herein, multiple glue-coated sheets are exposed using layouts with different line widths, while maintaining the same exposure conditions. The resulting product is tested and the displayed image at the test end is observed to determine the impact of different layout line widths on arrow shadows, thereby determining optimized parameters and processes for mass production of the photolithography process. As verified by the testing process, increasing the layout line width can effectively improve arrow shadow defects, thereby improving the yield of the finished product. That is, while ensuring the performance of the finished product, increasing the layout line width can effectively improve arrow shadow defects, thereby improving the yield of the finished product.

[0019] In one example, in step S1, the plurality of sheets is three. Of course, the method is not limited thereto, and more than three sheets can be used, which can not only determine the line width required by the finished product, but also further determine the limit value at which the line width of the layout reaches the optimal value.

[0020] In one example, in step S1, each product sheet is surface-coated with The thickness of the SIN film layer is 8 inches in diameter. Of course, it is not limited to this. The surface condition and size of each product wafer can be changed according to actual production conditions.

[0021] In one example, the glue coating in step S2 includes the following sub-steps: S21, HMDS film formation, forming an HMDS film on the surface of each product sheet by a gas phase method; S22, cooling before glue coating, cooling each product sheet with an HMDS film formed on the surface in a cooling tank to the temperature required for glue coating; S23, coating, spin coating glue on each product sheet in a glue coating process tank; S24, pre-baking, pre-baking each product sheet after spin coating glue in a pre-baking process tank.

[0022] Specifically, in one example, in sub-step S21, the operation of forming the HMDS film by the gas phase method is as follows: each product sheet is placed on the wafer stage of the vacuum chamber and the wafer stage is heated to 110°C, nitrogen is used as the carrier gas and the nitrogen pressure is 25kPa, HMDS vapor carried by the nitrogen is introduced, the pressure of the vacuum chamber is maintained at 20Pa, the time of introducing the HMDS vapor carried by the nitrogen is 60s, and the thickness of the formed HMDS film is

[0023] Specifically, in one example, in sub-step S22, the temperature required for the coating is 23°C.

[0024] Specifically, in one example, in sub-step S23, the glue model is DHK-BF511, and the process of spin coating glue is as follows: 1.5 mL of glue solution is dripped into the center of each product sheet at 2500 rpm. After the glue solution is dripped for 2 seconds, each product sheet is rotated at 2400 rpm for 35 seconds. The final glue coating thickness is

[0025] Specifically, in one example, in sub-step S24, the pre-baking temperature is 90° C. and the time is 60 seconds.

[0026] In one example, the exposure in step S3 includes the following sub-steps: S31, cooling before exposure, in which the coated sheet after pre-baking is cooled in a cooling tank to the required exposure temperature of 23°C; S32, exposure, using a VOT612-010-BE plate with layout design line widths of 250±20nm, 280±20nm, and 310±20nm, and a Nikon SF120 machine for stepper exposure, with a stepping distance of 12949μm in the X direction and 250389μm in the Y direction, and an exposure dose of 290mj / cm3 for each stepping exposure. 2 , the imaging focal length is 0.1 μm and the NA value is 0.62; S33, post-exposure baking, post-exposure baking is performed in a post-exposure baking process tank, the post-exposure baking temperature is 110° C., and the time is 120 s.

[0027] In one example, the development of step S4 includes the following sub-steps: S41, cooling before development, cooling each exposed film baked after exposure in a cooling tank to the temperature required for development, 23°C; S42, development, placing each exposed film cooled before development on the turntable of the developer, dripping developer to the center of each exposed film while rotating, and then flushing with water while rotating, the rotation is unidirectional, the rotation speed is 2000rpm, and a positive photoresist developer is used, the developer model is ZX-238, the development time is 60s, and the flushing time is 30s; S43, post-baking in a post-baking process tank, the post-baking temperature is 110°C, and the time is 90s.

[0028] [test]

[0029] Example 1

[0030] The method for improving the glue-coated arrow shadow of Example 1 comprises the following steps:

[0031] S1, provide multiple product sheets before photolithography process, multiple sheets are three, each product sheet is coated with Thickness of SIN film layer on 8-inch diameter wafer;

[0032] S2, glue coating, glue coating under the same conditions to obtain multiple glued sheets,

[0033] The gluing in step S2 is performed using the following sub-steps:

[0034] S21, HMDS film formation, using a gas phase method to form an HMDS film on the surface of each product sheet. The operation of forming the HMDS film by the gas phase method is as follows: each product sheet is placed on the wafer stage of the vacuum chamber and the wafer stage is heated to 110°C. Nitrogen is used as the carrier gas and the nitrogen pressure is 25kPa. HMDS vapor carried by nitrogen is introduced. The pressure of the vacuum chamber is maintained at 20Pa. The time of introducing HMDS vapor carried by nitrogen is 60s. The thickness of the formed HMDS film is

[0035] S22, cooling before coating, each product sheet with the HMDS film formed on the surface is cooled in a cooling tank to the temperature required for coating, wherein the temperature required for coating is 23°C;

[0036] S23, coating, each product piece is spin-coated with glue in the glue process tank, wherein the glue model is DHK-BF511, and the process of spin coating glue is as follows: 1.5mL glue solution is dripped into the center of each product piece at 2500rmp dynamic, and after the glue solution is dripped for 2s, each product piece is rotated at 2400rpm for 35s, and the final glue coating thickness is

[0037] S24, pre-baking, each product sheet after spin coating and coating is pre-baked in the pre-baking process tank,

[0038] Among them, the pre-baking temperature is 90℃ and the time is 60s;

[0039] S3, exposure, multiple coated sheets after coating are exposed using layouts with different line widths, with the other exposure conditions being the same to obtain multiple exposed sheets,

[0040] The exposure in step S3 is performed using the following sub-steps:

[0041] S31, cooling before exposure, the coated sheet after pre-baking is cooled in a cooling tank to the required temperature of 23°C for exposure;

[0042] S32, exposure, the layout design line width is 250±20nm, 280±20nm,

[0043] 310±20nm required VOT612-010-BE version and Nikon SF120 machine stepper exposure, stepping direction is 12949μm, stepping direction is 250389μm, and the exposure dose of each stepper exposure is 290mj / cm 2 , the imaging focal length is 0.1 μm and the NA value is 0.62;

[0044] S33, post-exposure baking, performing post-exposure baking in a post-exposure baking process tank,

[0045] The post-exposure bake temperature was 110°C and the time was 120s;

[0046] S4, development, the multiple exposed films are developed using the same development conditions to obtain multiple developed films,

[0047] The development of step S4 adopts the following sub-steps:

[0048] S41, cooling before development, cooling each exposed sheet after post-exposure baking in a cooling tank to the temperature required for development, 23°C;

[0049] S42, developing, placing each exposed film that has been cooled before development on a turntable of a developing machine, dripping developer onto the center of each exposed film while rotating, and then flushing with water while rotating. The rotation is unidirectional and the rotation speed is 2000 rpm. A positive photoresist developer (model ZX-238) is used. The developing time is 60 seconds and the flushing time is 30 seconds.

[0050] S43, post-baking in a post-baking process tank, the post-baking temperature is 110° C., and the time is 90 seconds;

[0051] S5, each display film is transformed into a finished product through the subsequent process, the finished product is tested and the display image at the test end is observed to determine the impact of different line width sizes of the layout on the arrow shadow and determine the optimized parameters and optimized process for mass production of the lithography process.

[0052] Figure 2 This is the display image of the finished product corresponding to the layout design line width of 250±20nm in Example 1 at the test end. Figure 3 This is the display image of the finished product corresponding to the layout design line width of 280±20nm in Example 1 at the test end. Figure 4 This is the display image of the finished product corresponding to the layout design line width of 310±20nm in Example 1 at the test end.

[0053] from Figures 2 to 4 As can be seen, the arrow shadow is noticeable when the line width is designed for 250±20nm; the arrow shadow is significantly reduced when the line width is designed for 280±20nm; and the arrow shadow is almost completely eliminated when the line width is designed for 310±20nm. The inventors believe that the arrow shadow is primarily due to differences in resistance. Increasing the line width brings the resistance of the arrow shadow closer to the normal resistance, thus reducing the arrow shadow.

[0054] comparison Figures 2 to 4 It can be seen that as the layout line width increases, the arrow shadow defect is effectively improved. That is, under the premise of ensuring the performance of the finished product, increasing the layout line width can effectively improve the arrow shadow defect, thereby improving the yield of the finished product. When other process conditions remain unchanged, the layout design line width of 310±20nm can be used as the layout design line width for the exposure process of mass production in the lithography process. In other words, for Example 1, under the premise of ensuring the performance of the finished product, the use of specific other process conditions and the layout design line width of 310±20nm can be used as the optimized process for this product for mass production.

[0055] The above detailed description is used to describe a number of exemplary embodiments, but this document is not intended to be limited to the explicitly disclosed combinations. Therefore, unless otherwise stated, the various features disclosed herein may be combined to form multiple additional combinations that are not shown for the sake of brevity.

Claims

1. A method for improving the shadow of a glue-coated arrow, characterized in that: Including steps: S1, providing multiple product wafers before the photolithography process, where multiple wafers are at least three; S2, gluing, gluing under the same gluing conditions to obtain multiple gluing sheets; S3, exposure, multiple coated sheets after coating are exposed using patterns with different line widths, with other exposure conditions being the same to obtain multiple exposed sheets; S4, developing, developing the multiple exposed films using the same developing conditions to obtain multiple developed films; S5, each display film is transformed into a finished product through the subsequent process, the finished product is tested and the display image at the test end is observed to determine the impact of different line width sizes of the layout on the arrow shadow and determine the optimized parameters and optimized process for mass production of the lithography process.

2. The method for improving the shadow of a glue-coated arrow according to claim 1, characterized in that: In step S1, Multiple sheets are three; Each product sheet is surface-plated with Thickness of SIN film layer on 8-inch diameter wafer.

3. The method for improving the shadow of a glue-coated arrow according to claim 2, characterized in that: The gluing step S2 includes the following sub-steps: S21, HMDS film formation, forming an HMDS film on the surface of each product sheet by a vapor phase method; S22, cooling before coating, each product sheet with HMDS film formed on the surface is cooled in a cooling tank to the temperature required for coating; S23, coating, each product sheet is spin-coated in a coating process tank; S24, pre-baking, each product sheet after spin coating and leveling is pre-baked in a pre-baking process tank.

4. The method for improving the shadow of a glue-coated arrow according to claim 3, characterized in that: In sub-step S21, the operation of forming the HMDS film by the gas phase method is as follows: each product sheet is placed on the wafer stage of the vacuum chamber and the wafer stage is heated to 110°C. Nitrogen is used as the carrier gas and the nitrogen pressure is 25kPa. HMDS vapor carried by nitrogen is introduced. The pressure of the vacuum chamber is maintained at 20Pa. The time of introducing HMDS vapor carried by nitrogen is 60s. The thickness of the formed HMDS film is 5. The method for improving the shadow of a glue-coated arrow according to claim 3, characterized in that: In sub-step S22, the temperature required for the coating is 23°C.

6. The method for improving the shadow of a glue-coated arrow according to claim 3, characterized in that: In sub-step S23, The glue model is DHK-BF511, The process of spin coating is as follows: 1.5 mL of glue solution is dripped into the center of each product sheet at 2500 rpm. After the glue solution is dripped for 2 seconds, each product sheet is rotated at 2400 rpm for 35 seconds. The final glue coating thickness is 7. The method for improving the shadow of a glue-coated arrow according to claim 3, characterized in that: In sub-step S24, the pre-baking temperature is 90° C. and the time is 60 seconds.

8. The method for improving the shadow of a glue-coated arrow according to claim 1, characterized in that: The exposure of step S3 includes the following sub-steps: S31, cooling before exposure, the coated sheet after pre-baking is cooled in a cooling tank to the required temperature of 23°C for exposure; S32 exposure: using the VOT612-010-BE plate with the layout design line widths of 250±20nm, 280±20nm, and 310±20nm, and a Nikon SF120 stepper exposure machine. The step size in the X direction is 12949μm, the step size in the Y direction is 250389μm, and the exposure dose for each stepper exposure is 290mj / cm 2 , the imaging focal length is 0.1 μm and the NA value is 0.62; S33, post-exposure baking, post-exposure baking is performed in a post-exposure baking process tank, the post-exposure baking temperature is 110° C., and the time is 120 seconds.

9. The method for improving the shadow of a glue-coated arrow according to claim 8, characterized in that: The development of step S4 includes the following sub-steps: S41, cooling before development, cooling each exposed sheet after post-exposure baking in a cooling tank to the temperature required for development, 23°C; S42, developing, placing each exposed film that has been cooled before development on a turntable of a developing machine, dripping developer onto the center of each exposed film while rotating, and then flushing with water while rotating. The rotation is unidirectional and the rotation speed is 2000 rpm. A positive photoresist developer (model ZX-238) is used. The developing time is 60 seconds and the flushing time is 30 seconds. S43, post-baking in a post-baking process tank, the post-baking temperature is 110° C., and the time is 90 seconds.

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