Polymer waveguide amplifier capable of realizing L-band light amplification and improving C-band light amplification gain and preparation method thereof

Abstract

The invention discloses a polymer waveguide amplifier capable of realizing L-band light amplification and improving C-band light amplification gain and a preparation method thereof, and belongs to the technical field of erbium-doped polymer optical waveguide amplifiers. Erbium is taken as one of matrixes, and meanwhile, the erbium and other elements are taken as matrixes together to prepare an alloy compound; the erbium element serving as the matrix is equivalent to increase the concentration of erbium in the compound, and the erbium element and other elements jointly serve as the matrix to form the alloy, so that the concentration quenching effect of erbium can be reduced; alloy compound particles are compounded in a polymer to prepare a gain medium of the polymer waveguide amplifier; preparing a polymer-based optical waveguide amplifier by taking the gain medium of the composite alloy compound particles as a core layer; according to the optical waveguide amplifier prepared through the method, the erbium ion concentration in the gain medium can be larger than or equal to 1018 cm <-3 >, high gain can be obtained in the L wave band and reaches 12 dB, light amplification of the polymer optical waveguide amplifier in the L wave band is achieved, and meanwhile the relative gain of the polymer optical waveguide amplifier in the C wave band can be improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of erbium-doped polymer optical waveguide amplifiers, and in particular relates to a polymer waveguide amplifier capable of realizing L-band optical amplification and improving C-band optical amplification gain, and a preparation method thereof. Background Art

[0002] Optical amplifiers are essential components in optical communication systems, used to compensate for signal light loss in optical communication systems. Due to the huge application potential of erbium-doped waveguide amplifiers (EDWAs) in new system architectures of photonic integrated circuits and local access optical networks, people have been committed to the development of such amplifiers over the past decade. Erbium-doped optical waveguide amplifiers are the most widely studied optical waveguide amplifiers because of their operating wavelength in the C-band. The dopant erbium ion used for optical amplification is 4 I 13 / 2 → 4 I 15 / 2 The transition can cover the C band and part of the L band. In the fiber amplifier with a long working medium, high concentration doping (greater than or equal to 10 18 cm -3 ) has been demonstrated to achieve amplification in the L-band (1575-1625nm), but due to the high erbium ion doping concentration, the C-band gain decreases. The operating principle of optical waveguide amplifiers is to achieve light amplification within a short gain medium length by doping with erbium ions at a concentration higher than that in the optical fiber. Further doping with high erbium ion concentrations will cause severe concentration quenching, further reducing the C-band gain and making L-band light amplification even more difficult. In polymer-based optical waveguide devices, achieving high erbium concentrations is particularly difficult due to the solubility limitations of inorganic erbium ions in the polymer matrix. In recent years, rare earth nanocrystals have become attractive dopants for the preparation of polymer optical waveguide amplifiers due to their high luminescence intensity and quantum efficiency in the infrared band of optical communications. However, in rare earth nanocrystals, erbium ions are doped into the matrix as luminescent center ions, and the erbium ion doping molar concentration generally does not exceed 2%. When rare earth nanocrystals are used as dopants to form a gain medium, the concentration of erbium ions per unit volume in the gain medium is limited due to the composite concentration of rare earth nanocrystals in the polymer, which makes it difficult to achieve a doping concentration of erbium ions higher than 10% in the fiber amplifier. 18 cm -3 The existing doping process is difficult to achieve this concentration requirement. Therefore, the C-band gain of erbium-doped polymer optical waveguide amplifiers is small, and it is difficult to obtain L-band gain. Summary of the Invention

[0003] In response to the problems existing in the prior art of erbium-doped polymer optical waveguide amplifiers (EDWAs), such as low C-band gain and difficulty in observing optical amplification gain in the L-band, the present invention provides a polymer waveguide amplifier and a preparation method that can achieve both L-band optical amplification and improved C-band optical amplification gain. The invention enables the polymer EDWA to achieve gain in the L-band and improve C-band gain. The invention uses erbium as one of the matrices and, together with other elements, as a matrix to prepare an alloy compound. Using erbium as a matrix increases the erbium concentration in the compound, while forming an alloy with other elements as a matrix can reduce the concentration quenching effect of erbium. The alloy compound particles are then composited in a polymer to prepare a gain medium for the polymer waveguide amplifier. The gain medium of the composite alloy compound particles serves as a core layer to prepare a polymer-based optical waveguide amplifier. The optical waveguide amplifier prepared by this method has an erbium ion concentration in the gain medium that is greater than or equal to 10 18 cm -3 , a higher gain of 12dB can be obtained in the L band, realizing the optical amplification of the polymer optical waveguide amplifier in the L band. At the same time, the relative gain of the polymer optical waveguide amplifier in the C band can be improved.

[0004] The present invention is achieved through the following technical solutions:

[0005] In a first aspect, the present invention provides a method for preparing a polymer waveguide amplifier capable of achieving L-band optical amplification and improving C-band optical amplification gain, comprising the following steps:

[0006] Step 1: preparing an alloy compound based on erbium;

[0007] Wherein, the doping mass fraction of erbium is 50%-80%;

[0008] Step 2: preparing a polymer gain medium by doping alloy compound particles with a photoresist polymer;

[0009] Step 3: Prepare the optical waveguide device through a wet etching process or a spin coating process.

[0010] Furthermore, in step 1, the alloy compound with erbium as the matrix is prepared by a hydrothermal method (solvothermal method), a high-temperature pyrolysis method, a microemulsion method, a sol-gel method, a combustion method or a precipitation method.

[0011] Furthermore, in step 1, the erbium-based alloy compound includes erbium and rare earth oxide alloy (Er X RE 1-X )2O3, erbium and alkaline earth metal oxide alloys, erbium and transition metal oxide alloys, erbium and other metal oxides, erbium and inorganic fluoride alloys;

[0012] Among them, in erbium and rare earth oxide alloys (ErX RE 1-X )2O3, RE is Y, Sc or lanthanide, such as (Er X Y 1-X )2O3、(Er X Sc 1-X )2O3、(Er X La 1-X )2O3、(Er X Lu 1-X )2O3、(Er X Gd 1-X )2O3、(Er X Yb 1-X )2O3, etc.

[0013] Erbium and alkaline earth metal oxide alloy xEr2O 3: In 1-xMO, M is an alkaline earth metal, for example: (xEr2O 3: 1-xBeO), (xEr2O 3: 1-xMgO), (xEr2O 3: 1-xCaO), (xEr2O 3: 1-xSrO), (xEr2O 3: 1-xBaO) etc.;

[0014] Erbium and transition metal oxide alloys (xEr2O 3: 1-xZrO2), (xEr2O 3: 1-xV2O5), (xEr2O 3: 1-xCrO3), (xEr2O 3: 1-xMnO2), (xEr2O 3: 1-xZnO), (xEr2O 3: 1-xTiO2) etc.

[0015] Erbium and other metal oxides (xEr2O 3: 1-xTeO2), (xEr2O 3: 1-xBi2O3), (xEr2O 3: 1-xSb2O4), (xEr2O 3: 1-xGeO2), (xEr2O 3: 1-xAl2O3), (xEr2O 3: 1-xIn2O3), (xEr2O 3: 1-xSnO2) etc.

[0016] Erbium and inorganic fluoride alloys including Er X RE 1-X F3、MEr XRE 1-X F X 、NaREF4、KREF4、BaEr X RE 1-X F5;

[0017] In Er X RE 1-X In F3, RE is Y, Sc and lanthanide elements, such as Er X Y 1-X F3, Er X Sc 1-X F3, Er X La 1-X F3, Er X Lu 1-X F3, Er X Gd 1-X F3, etc.

[0018] MEr X RE 1-X F X Where M is Li, Na, K or Ba, RE is Y, Sc and lanthanide elements, X = 4 or 5, such as LiEr X RE 1-X F4 (such as LiEr X Y 1-X F4、LiEr X Sc 1-X F4、LiEr X La 1-X F4、LiEr X Lu 1-X F4、LiEr X Gd 1-X F4, etc.

[0019] NaREF4 (such as NaEr X Y 1-X F4、NaEr X Sc 1-X F4、NaEr X La 1-X F4、NaEr X Lu 1-X F4、NaEr X Gd 1-X F4, etc.), KREF4 (such as KE X Y 1-X F4, KE X Sc 1-X F4, KE X La 1-X F4, KE X Lu 1-X F4, KEX Gd 1-X F4, etc.), BaEr X RE 1-X F5 (such as: BaEr X Y 1-X F5、BaEr X Sc 1-X F5、BaEr X Lu 1-X F5、BaEr X Gd 1-X F5, etc.).

[0020] The size of the alloy particles is 1-100 nm.

[0021] In the above alloy compounds, Er 3+ As both a matrix and a luminescent central ion, its concentration (Er 3+ The amount of substance of the ions / the total amount of substance of the cationic elements in the alloy compound) is 50-80%; the concentration of other metal element ions constituting the matrix (the amount of substance of other metal element ions / the total amount of substance of the cationic elements in the alloy compound) is 20%-50%.

[0022] In the above alloy compounds, Yb can be doped 3+ As the sensitizer ion, the sensitizer ion Yb 3+ The concentration is 2%-20%; if doped with sensitizer ions, it is necessary to ensure that Er 3+ The ion concentration remains unchanged, and the concentration of other metal ions constituting the matrix is reduced, and the total concentration of various cations is 100%.

[0023] Furthermore, in step 2, a physical doping method is used to prepare a photoresist polymer gain medium, and the specific steps are as follows:

[0024] The erbium-based alloy compound prepared in step 1 is dissolved in an organic solvent and uniformly dispersed by ultrasound, and then uniformly mixed with a photoresist to obtain a photoresist polymer gain medium with uniformly dispersed alloy compound particles;

[0025] The organic solvent includes benzene or toluene; the photoresist includes SU series and AZ series photoresist.

[0026] Furthermore, the photoresist polymer gain medium in which the alloy compound particles are uniformly dispersed prepared by the physical doping method in step 2 is used to prepare a ridge or inverted ridge polymer waveguide amplifier by ultraviolet photolithography using a wet etching process.

[0027] Furthermore, in step 2, a photoresist polymer gain medium is prepared by chemical polymerization, and the specific steps are as follows:

[0028] The erbium-based alloy compound prepared in step 1 is dissolved in an organic solvent and uniformly dispersed by ultrasound, and then polymerized with a polymer monomer to obtain a polymer gain medium with uniformly linked alloy compound particles;

[0029] The organic solvent includes benzene or toluene; the polymer monomer includes methyl methacrylate with double bonds and epoxy resin with epoxy rings.

[0030] Furthermore, the polymer gain medium linked by the alloy compound particles prepared by the chemical doping method in step 2 is used to prepare an inverted ridge polymer waveguide amplifier by spin coating using a coating process.

[0031] In a second aspect, the present invention provides a polymer waveguide amplifier that can achieve L-band light amplification and improve C-band light amplification gain, which is prepared by the method described in the first aspect.

[0032] In a third aspect, the present invention provides an application of a polymer waveguide amplifier for L-band optical amplification, which can achieve L-band optical amplification and improve C-band optical amplification gain. Specifically, 980nm and 1480nm lasers are used as pump light, respectively. In the polymer optical waveguide amplifier, a relative gain in the L-band can be obtained, thereby achieving L-band optical amplification.

[0033] In a fourth aspect, the present invention provides an application of a polymer waveguide amplifier capable of achieving L-band optical amplification and improving C-band optical amplification gain in improving C-band optical amplification gain. Specifically, 980nm and 1480nm lasers are used as pump light, respectively, and an improvement in the relative gain of the C-band can be obtained in the polymer optical waveguide amplifier.

[0034] Compared with the prior art, the advantages of the present invention are as follows:

[0035] 1. The polymer waveguide amplifier capable of achieving L-band optical amplification and C-band gain enhancement and its preparation method are prepared by using erbium and other elements to prepare an alloy compound, wherein Er 3+ The concentration of the alloy compound is 50%-80%, and the alloy compound particles are doped into a polymer to prepare a gain medium. With the gain medium as the core layer, the prepared polymer optical waveguide amplifier can obtain relative gain in the L band and achieve increased gain in the C band;

[0036] 2. While the alloy compound particles of the present invention are difficult to measure in the L-band, when fabricated into waveguide devices, they can achieve relative gain in the L-band. The resulting optical waveguide amplifier can achieve a relative gain of over 20 dB in the C-band, a significant improvement over existing technologies.

[0037] 3. The erbium ion concentration in the erbium alloy particle-doped polymer gain medium prepared in the present invention can be greater than or equal to 10 18 cm -3 . BRIEF DESCRIPTION OF THE DRAWINGS

[0038] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following briefly describes the drawings required for the specific embodiments or the description of the prior art. Similar elements or parts are generally identified by similar reference numerals throughout the drawings. Elements or parts in the drawings are not necessarily drawn to scale.

[0039] Figure 1 :NaEr 50％ Upconversion emission spectrum of YF4:x%Yb x=(2%-20%) alloy particles under 980nm pump light excitation;

[0040] Figure 2 : Energy level analysis diagram of Er and Yb co-doped system;

[0041] Figure 3 :NaEr 50％ TEM images of YF4:x%Yb x=(2%-20%) alloy particles, where the sensitizer concentration in the alloy particles is different (a) Yb=20%, (b) Yb=10%, (c) Yb=5%, (d) Yb=2%;

[0042] Figure 4 :NaEr 50％ XRD pattern of YF4:x%Yb x=(2%-20%) alloy particles;

[0043] Figure 5 :NaEr 50％ Down-conversion emission spectra of YF4:x%Yb x=(2%-20%) alloy particles under 980nm pump light excitation;

[0044] Figure 6 :Flowchart of preparation of alloy nanoparticles and polymer gain medium by high temperature thermal decomposition method;

[0045] Figure 7 :Process flow chart of preparing rectangular waveguide amplifier by UV lithography;

[0046] Figure 8 : Schematic diagram of gain test system;

[0047] Figure 9 :Device photos;

[0048] Figure 10 :NaEr 50％Gain test results of YF4:5% Yb device in L band;

[0049] Figure 11 :NaEr 50％ Gain test results of YF4:5% Yb device in C band;

[0050] Figure 12 :NaEr 80％ TEM image of YF4:18%Yb alloy compound particles;

[0051] Figure 13 :NaEr 80％ XRD pattern of YF4:18%Yb alloy compound particles;

[0052] Figure 14 :NaEr 80％ Down-conversion emission spectrum of YF4:18%Yb alloy compound particles;

[0053] Figure 15 : Doped NaEr 0.8 The gain test results of the polymer optical waveguide amplifier of YF4:18% Yb alloy compound in L band;

[0054] Figure 16 : Doped NaEr 0.8 Y 0.02 F4: Gain test results of polymer optical waveguide amplifier with 18% Yb alloy compound in C band. DETAILED DESCRIPTION

[0055] In order to clearly and completely describe the technical solution and specific working process of the present invention, the specific implementation methods of the present invention are as follows in conjunction with the accompanying drawings:

[0056] Example 1

[0057] This embodiment provides a method for preparing a polymer waveguide amplifier capable of achieving L-band light amplification and improving C-band light amplification gain, which specifically includes the following steps:

[0058] Step 1: If Figure 6 As shown, an alloy compound with erbium as the matrix is prepared;

[0059] 2 mmol of rare earth chloride RECl3·6H2O, comprising 50% ErCl3·6H2O, (50-x)% YCl3·6H2O, and x% YbCl3·6H2O, where x is selected from a range of 2% to 20%, is added to a three-necked flask together with 12 mL of oleic acid and 30 mL of octadecene. In this embodiment, x is selected from 2, 5, 10, and 20, respectively. During the experiment, the liquid is stirred at a high speed of 800 rpm and argon is introduced as a protective gas. The mixed liquid is heated to 160°C and maintained for 60 minutes to dissolve the rare earth elements in the organic solvent, and then naturally cooled to room temperature. When the temperature drops to 90°C, the mixture containing 0. A 20 mL methanol solution of 296 g of ammonium fluoride and a 10 mL methanol solution containing 0.2 g of sodium hydroxide were added dropwise to a three-necked flask; after the addition was completed, the mixed solution was heated to 60° C. and maintained for 60 minutes to remove the methanol in the solution; after the methanol was completely removed, the temperature of the reaction system was raised to 108° C. and vacuum was maintained at this temperature for 20 minutes to completely remove the low-boiling point solvent; after vacuuming, the system pressure was restored to normal, and the temperature of the reaction system was raised to 300° C. and maintained for 65 minutes, and then the liquid was allowed to cool naturally to room temperature, and the product was precipitated with excess anhydrous ethanol, and the product was washed several times with a mixed solution of anhydrous ethanol and cyclohexane to obtain NaEr 50％ YF4:5%Yb alloy compound particles, the morphology, crystal structure and luminescence properties of the alloy compound particles are characterized as follows Figure 1 、 Figure 3 、 Figure 4 and Figure 5 As shown;

[0060] from Figure 1 It can be seen that the up-conversion luminescence is significantly weakened compared with the nanocrystals with an erbium doping concentration of 2%;

[0061] from Figure 3 It can be seen that alloy compound particles with nanometer size can be prepared;

[0062] from Figure 4 It can be seen that the alloy compound is a hexagonal phase;

[0063] from Figure 5 It can be seen that the down-conversion luminescence is significantly weakened compared with the nanocrystals with an erbium doping concentration of 2%;

[0064] Step 2: preparing a photoresist polymer gain medium by doping alloy compound particles with SU-8 photoresist;

[0065] Take 0.1 mmol of the erbium-based alloy compound prepared in step 1, dissolve it in 1 mL of toluene solvent and disperse it evenly by ultrasound; fuse it with SU-8 2005 photoresist at a mass ratio of 1:4, and ultrasound-protect it for 120 minutes to obtain a photoresist polymer gain medium with evenly dispersed rare earth alloy compound particles, such as Figure 6 shown.

[0066] Step 3: If Figure 7 As shown, the optical waveguide is prepared by a wet etching process;

[0067] First, on a silicon substrate with a silicon dioxide layer grown on the surface, a gain medium thin film is obtained by spin coating at a forward speed of 800 r / min for 10 seconds and a backward speed of 3000 r / min for 20 seconds, and then the temperature is step-by-step increased to 60°C for pre-baking and heating for 10 minutes, and then the temperature is step-by-step increased to 90°C for heating for 20 minutes; then, a photomask with a waveguide structure is placed on the sample surface, and ultraviolet exposure is performed using a photolithography machine, and then the temperature is step-by-step increased to 65°C for pre-baking and heating for 10 minutes, and then the temperature is step-by-step increased to 95°C for heating for 20 minutes; after the sample is cooled to room temperature, it is developed using a SU-8 special developer, soaking for 5 seconds each time, and the development is completed after 5-10 times to obtain a sample with a rectangular waveguide structure on the surface, and the film is hardened at 120°C for 120 minutes.

[0068] Step 4: Gain performance test of alloy particle-doped polymer optical waveguide amplifier.

[0069] Device Figure 8 The test system shown here measures the gain in the L band. The photo of the device pumped by a 980nm laser is shown in the figure below. Figure 9 As shown, NaEr 50％ The rectangular waveguide made of YF4:5% Yb alloy compound particles has gain in the entire L band 1590-1630nm, with a relative gain of nearly 12dB at 1590nm and a relative gain of nearly 7dB at 1630nm. The test results of the relationship between wavelength and relative gain are shown in Figure 2. Figure 10 shown.

[0070] Experimental results and analysis: Figure 10 It can be seen that the doping of alloy compound crystals increases Er 3+ The doping concentration is 50% of the Er ion doping concentration, and the Er ion concentration in the polymer is greater than 10 20 / cm 3 , and achieved optical amplification in the L band, achieving a large gain in the L band, with a gain of 12dB at 1590nm and 11.5dB at 1615nm, and a minimum relative gain of 6dB in the range of 1590nm-1630nm.

[0071] Under 980nm laser pumping, NaEr 0.5 Y 0.45 F4: The rectangular waveguide made of 5% Yb alloy particles has a maximum relative gain of 20dB at 1545nm. Figure 11 As shown. This shows that the alloy particles have improved Er 3+ Doping concentration, alloy particles are doped into SU-8 photoresist to prepare gain medium, in which the erbium ion concentration is greater than 10 20 / cm 3 The polymer optical waveguide amplifier prepared using this gain medium achieved a maximum relative gain of 26dB, significantly improving the C-band gain.

[0072] Example 2

[0073] This embodiment provides a method for preparing a polymer waveguide amplifier capable of achieving L-band light amplification and improving C-band light amplification gain, which specifically includes the following steps:

[0074] Step 1: Preparation of NaEr by high temperature pyrolysis 80％ YF4: 18% Yb alloy compound, in which the erbium ion concentration is 80%:

[0075] The specific synthesis steps are as follows: 2 mmol of rare earth chloride RECl3·6H2O (composed of 80% ErCl3·6H2O, 2% YCl3·6H2O, and 18% YbCl3·6H2O) was added to a three-necked flask along with 12 mL of oleic acid and 30 mL of octadecene. The mixture was stirred at 800 rpm and argon was introduced as a protective gas. The mixture was heated to 160°C for 60 minutes to dissolve the rare earth elements in the organic solvent, then cooled naturally to room temperature. After cooling to 90°C, a solution containing 0.296 g of ammonium fluoride in 20 mL of methanol and 0.2 g of sodium hydroxide in 10 mL of methanol were added dropwise to the three-necked flask. After the additions were complete, the mixture was heated to 60°C and held for 60 minutes to remove the methanol. After complete removal of the methanol, the reaction system was heated to 108°C and maintained at this temperature for 20 minutes under vacuum to completely remove the low-boiling-point solvent. After evacuation, the system pressure was restored to normal, and the temperature of the reaction system was raised to 300°C and maintained for 65 minutes, and then the liquid was allowed to cool naturally to room temperature.

[0076] The obtained alloy compound particles were characterized. After the reaction system was naturally cooled to room temperature, the product was precipitated with excess anhydrous ethanol and washed several times with a mixed solution of anhydrous ethanol and cyclohexane to obtain NaEr 80％YF4:18%Yb alloy compound particles. The morphology, crystal structure and luminescence properties of the alloy particles are characterized as follows Figure 11 、 Figure 12 and Figure 13 shown.

[0077] from Figure 12 It can be seen that alloy compound particles with nanometer size can be prepared;

[0078] from Figure 13 It can be seen that the alloy compound is a hexagonal phase;

[0079] from Figure 14 It can be seen that the down-conversion luminescence can cover the C band, but the L band luminescence is weak;

[0080] Step 2: Using NaEr 80％ The gain medium was prepared by doping YF4:18% Yb alloy particles with SU-8 photoresist.

[0081] 0.1 mmol of washed rare earth nanoparticles was dissolved in 1 mL of toluene and dispersed evenly by sonication. The nanoparticles were then mixed with SU-8 2005 photoresist at a mass ratio of 1:4 and sonicated for 120 minutes in the dark to obtain a photoresist-polymer gain medium with uniformly dispersed alloy particles.

[0082] Step 3: Prepare an optical waveguide amplifier using the gain medium obtained in step 2.

[0083] The process of preparing rectangular optical waveguide amplifier using photolithography is as follows: Figure 7 As shown. First, a silicon substrate with a silicon dioxide layer grown on its surface is spin-coated at a forward speed of 800 r / min for 10 seconds and a backward speed of 3000 r / min for 20 seconds to obtain a gain medium thin film. The temperature is then stepped up to 60°C for pre-baking for 10 minutes, and then to 90°C for 20 minutes. A photomask with a waveguide structure is then placed on the sample surface and exposed to UV light using a photolithography machine. The temperature is then stepped up to 65°C for pre-baking for 10 minutes, and then to 95°C for 20 minutes. After the sample cools to room temperature, it is developed using a dedicated SU-8 developer, soaking for 5 seconds each time. After 5-10 cycles, the development is complete, resulting in a sample with a rectangular waveguide structure on its surface. The film is then hardened at 120°C for 120 minutes.

[0084] L-band gain performance test.

[0085] Device Figure 8 The test system shown measures the gain of the L-band. 80％The rectangular waveguide prepared by YF4:5% Yb alloy compound particles has gain at 1590-1630nm, with a relative gain of nearly 8dB at 1600nm and a relative gain of nearly 3dB at 1630nm. The test results of the relationship between wavelength and relative gain are shown in the figure. Figure 15 shown.

[0086] Experimental results and analysis: Figure 15 It can be seen that the doping of alloy compound crystals increases Er 3+ The doping concentration is 80% of the Er ion doping concentration, and the Er ion concentration in the polymer is greater than 10 21 / cm 3 , and achieved optical amplification in the entire L-band 1590-1630nm, achieving a large gain in the L-band, with a gain of 8dB at 1590nm and a relative gain of nearly 3dB at 1630nm.

[0087] C-band gain performance test.

[0088] NaEr under 980nm laser pumping 0.8 Y 0.02 F4: The relative gain test results of the rectangular waveguide made of 18% Yb alloy particles in the C band are as follows Figure 16 As shown;

[0089] The obtained alloy particles have increased Er 3+ Doping concentration, alloy particles are doped into SU-8 photoresist to prepare gain medium, in which the erbium ion concentration is greater than 10 21 / cm 3 The polymer optical waveguide amplifier prepared using this gain medium achieved a maximum relative gain of 18dB, significantly improving the C-band gain.

[0090] The preferred embodiments of the present invention are described in detail above in conjunction with the accompanying drawings. However, the present invention is not limited to the specific details in the above embodiments. Within the technical concept of the present invention, various simple modifications can be made to the technical solution of the present invention, and these simple modifications all fall within the scope of protection of the present invention.

[0091] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any appropriate manner without contradiction. In order to avoid unnecessary repetition, the present invention will not further describe various possible combinations.

[0092] In addition, the various embodiments of the present invention may be arbitrarily combined, and as long as they do not violate the concept of the present invention, they should also be regarded as the contents disclosed by the present invention.

Claims

1. A method for preparing a polymer waveguide amplifier capable of achieving L-band optical amplification and improving C-band optical amplification gain, characterized in that: The specific steps include: Step 1: preparing an alloy compound based on erbium; Wherein, the doping mass fraction of erbium is 50%-80%; Step 2: preparing a polymer gain medium by doping alloy compound particles with a photoresist polymer; Step 3: Prepare the optical waveguide device through a wet etching process or a spin coating process.

2. The method for preparing a polymer waveguide amplifier capable of achieving L-band light amplification and improving C-band light amplification gain according to claim 1, wherein: In step 1, an alloy compound based on erbium is prepared by a water / solvothermal method, a high-temperature pyrolysis method, a microemulsion method, a sol-gel method, a combustion method or a precipitation method.

3. The method for preparing a polymer waveguide amplifier capable of achieving L-band light amplification and improving C-band light amplification gain according to claim 1, wherein: In step 1, the erbium-based alloy compound includes erbium and rare earth oxide alloy (Er X RE 1-X )2O3, erbium and alkaline earth metal oxide alloys, erbium and transition metal oxide alloys, erbium and other metal oxides, erbium and inorganic fluoride alloys; Among them, in erbium and rare earth oxide alloys (Er X RE 1-X )2O3, RE is Y, Sc or a lanthanide element; Erbium and alkaline earth metal oxide alloy xEr2O 3: In 1-xMO, M is an alkaline earth metal; Erbium and transition metal oxides include: (xEr2O 3: 1-xZrO2), (xEr2O 3: 1-xV2O5), (xEr2O 3: 1-xCrO3), (xEr2O 3: 1-xMnO2), (xEr2O 3: 1-xZnO), (xEr2O 3: 1-xTiO2); Erbium and other metal oxides include: (xEr2O 3: 1-xTeO2), (xEr2O 3: 1-xBi2O3), (xEr2O 3: 1-xSb2O4), (xEr2O 3: 1-xGeO2), (xEr2O 3: 1-xAl2O3), (xEr2O 3: 1-xIn2O3), (xEr2O 3: 1-xSnO2); Erbium and inorganic fluoride alloys including Er X RE 1-X F3、MEr X RE 1-X F X 、NaREF4、KREF4、BaEr X RE 1-X F5; In Er X RE 1-X In F3, RE is Y, Sc and lanthanide; MEr X RE 1-X F X wherein M is Li, Na, K or Ba, RE is Y, Sc or lanthanide, and X=4 or 5; The size of the alloy particles is 1-100 nm. In the above alloy compounds, Er 3+ It serves as both a matrix and a luminescent center ion; the concentration of other metal element ions constituting the matrix is 20%-50%. In the above alloy compounds, Yb can be doped 3+ As the sensitizer ion, the sensitizer ion Yb 3+ The concentration is 2%-20%; if doped with sensitizer ions, it is necessary to ensure that Er 3+ The ion concentration remains unchanged, and the concentration of other metal ions constituting the matrix is reduced, and the total concentration of various cations is 100%.

4. The method for preparing a polymer waveguide amplifier capable of achieving L-band light amplification and improving C-band light amplification gain according to claim 1, wherein: In step 2, a photoresist polymer gain medium is prepared by a physical doping method, and the specific steps are as follows: The erbium-based alloy compound prepared in step 1 is dissolved in an organic solvent and uniformly dispersed by ultrasound, and then uniformly mixed with a photoresist to obtain a photoresist polymer gain medium with uniformly dispersed alloy compound particles; The organic solvent includes benzene or toluene; the photoresist includes SU series and AZ series photoresist.

5. The method for preparing a polymer waveguide amplifier capable of achieving L-band light amplification and improving C-band light amplification gain according to claim 4, wherein: The photoresist polymer gain medium with uniformly dispersed alloy compound particles prepared by the physical doping method in step 2 is used to prepare a ridge or inverted ridge polymer waveguide amplifier by ultraviolet photolithography using a wet etching process.

6. The method for preparing a polymer waveguide amplifier capable of achieving L-band light amplification and improving C-band light amplification gain according to claim 1, wherein: In step 2, a photoresist polymer gain medium is prepared by chemical polymerization, and the specific steps are as follows: The erbium-based alloy compound prepared in step 1 is dissolved in an organic solvent and uniformly dispersed by ultrasound, and then polymerized with a polymer monomer to obtain a polymer gain medium with uniformly linked alloy compound particles; The organic solvent includes benzene or toluene; the polymer monomer includes methyl methacrylate with double bonds and epoxy resin with epoxy rings.

7. The method for preparing a polymer waveguide amplifier capable of achieving L-band light amplification and improving C-band light amplification gain according to claim 1, wherein: The polymer gain medium linked by the alloy compound particles prepared by the chemical doping method in step 2 is used, and an inverted ridge polymer waveguide amplifier is prepared by a coating process and a spin coating method.

8. A polymer waveguide amplifier capable of achieving L-band optical amplification and improving C-band optical amplification gain, characterized in that: The method is prepared by any one of claims 1 to 7.

9. Application of the polymer waveguide amplifier capable of achieving L-band light amplification and improving C-band light amplification gain in L-band light amplification as claimed in claim 8, characterized in that: Specifically, by using 980nm and 1480nm lasers as pumping lights respectively, a relative gain in the L band can be obtained in the polymer optical waveguide amplifier, thereby realizing light amplification in the L band.

10. Application of the polymer waveguide amplifier capable of achieving L-band optical amplification and improving C-band optical amplification gain as claimed in claim 8 in improving C-band optical amplification gain, specifically, using 980nm and 1480nm lasers as pump lights, respectively, to achieve an improvement in the relative gain of the C-band in the polymer optical waveguide amplifier.

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