Photoelectric co-packaging structure and preparation method thereof
By employing a glass transition plate, electrical interconnect layer, photonic integrated chip, and glass optical waveguide design in the optoelectronic co-packaging structure, and combining evanescent wave interlayer coupling and end-face coupling, the problems of high coupling loss and high cost in traditional optoelectronic co-packaging are solved, achieving low-loss optical amplification and high-reliability optical interconnect.
Patent Information
- Application Number
- CN202511717946.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-21
- Publication Date
- 2026-02-17
AI Technical Summary
In existing optoelectronic co-packaging technologies, the fabrication process of glass waveguide optical amplifiers is complex and costly, and traditional coupling methods suffer from high coupling losses, which limits industrial application and versatility.
An electrical interconnect layer, an electronic integrated chip, a photonic integrated chip, and a glass waveguide are arranged on a glass transition plate. Optical interconnection is achieved through evanescent wave interlayer coupling and end-face coupling. Gain material is spin-coated on the glass waveguide, and pump light is provided by an LED vertical pump array for optical amplification.
It achieves low-loss optical interconnection and optical amplification, reduces packaging costs and complexity, improves the industrialization and adaptability of packaging, is suitable for coupling between various waveguide materials, and features high efficiency, low cost and high reliability.
Smart Images
Figure CN121548322A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of optical devices, and more particularly to an optoelectronic co-packaging structure and its fabrication method. Background Technology
[0002] During light transmission, transmission loss, scattering loss, and bending loss are inevitable. Optical amplifiers, by avoiding the need for optical-electrical-optical conversion and directly amplifying optical signals, compensate for signal power loss in optical networks, effectively improving the effective distance and transmission quality of optical communication, and thus finding wide application in optical communication networks. Optical waveguide amplifiers are easily integrated with various optical waveguide devices and can better adapt to planar photonic integration environments, making them active optical amplification devices with high research value. Currently, most glass waveguide-based optical amplifiers are fabricated by using special glasses containing rare-earth doped elements (such as erbium-doped and erbium-ytterbium-doped glass) to amplify optical signals using the optical properties of these rare-earth elements. However, this method faces many challenges. Not only is the fabrication process of glass waveguide optical amplifiers complex and costly, but in the optoelectronic co-packaging process based on glass interposers, each type of special glass used as an interposer requires repeated optimization and adaptation for glass vias and other co-packaging-related process parameters, greatly limiting the industrialization and versatility of the co-packaging process. Furthermore, in optoelectronic co-packaging based on glass adapters, traditional coupling methods face high coupling losses, making it crucial to achieve low-loss or even lossless coupling between waveguides and photonic integrated chips. Summary of the Invention
[0003] The purpose of this invention is to solve the problems in the prior art.
[0004] The technical solution adopted by the present invention to solve its technical problem is: to provide an optoelectronic co-packaging structure, including a glass transition plate and an electrical interconnect layer, an electronic integrated chip, a photonic integrated chip, a glass waveguide and an LED vertical pump array disposed on the glass transition plate;
[0005] The photonic integrated chip is electrically connected to the electronic integrated chip through the electrical interconnect layer;
[0006] The on-chip optical waveguide on the photonic integrated chip and the glass optical waveguide are optically interconnected through evanescent interlayer coupling; the glass optical waveguide and the optical fiber in the optical fiber connector are optically interconnected through end-face coupling.
[0007] The gain material spin-coated onto the glass waveguide serves as the upper cladding, achieving optical amplification under the action of the LED vertical pump array.
[0008] Preferably, the glass optical waveguide enables optical interconnection between the fiber optic connector and the on-chip optical waveguide on the photonic integrated chip, specifically as follows:
[0009] The gain material is used as a binder to achieve evanescent wave interlayer coupling between the glass optical waveguide and the on-chip optical waveguide on the photonic integrated chip.
[0010] Preferably, the glass waveguide is a surface-type glass waveguide obtained through ion exchange.
[0011] Preferably, the glass waveguide is a glass waveguide fabricated by femtosecond laser direct writing in glass.
[0012] This invention also provides a method for preparing an optoelectronic co-packaging structure, comprising the following steps:
[0013] Laser-induced etching is used to groove and drill holes in glass on a glass adapter plate.
[0014] A glass waveguide is fabricated on a glass adapter plate, and a gain material is spin-coated onto the glass waveguide to obtain an optical waveguide amplifier.
[0015] Fabricate an electrical interconnect layer on a glass adapter plate;
[0016] Electronic integrated chips and photonic integrated chips are flip-chip bonded to a glass transition plate and electrically connected to an electrical interconnect layer, respectively; an evanescent wave interlayer coupling structure is fabricated between a glass optical waveguide and an on-chip optical waveguide on the photonic integrated chip.
[0017] Fix the fiber optic connector to the end face of the glass waveguide;
[0018] The adapter board with the LED vertical pump array is bonded to the glass adapter board, so that the LED vertical pump array is located above the coupling structure between the optical waveguide amplifier and the evanescent wave layer.
[0019] Preferably, the step of fabricating a glass waveguide on a glass transition plate and then spin-coating a gain material onto the glass waveguide to obtain an optical waveguide amplifier includes the following steps:
[0020] Low-loss surface-type glass waveguides are fabricated by performing ion exchange on the surface of a glass transition plate.
[0021] A rare earth element-doped polymer solution is prepared and then spin-coated onto a glass waveguide.
[0022] Preferably, the step of performing ion exchange on the surface of the glass transition plate to prepare a low-loss surface-type glass waveguide includes the following steps:
[0023] D263T glass was selected, and a 200 nm thick aluminum film was physically vapor-deposited on the glass surface.
[0024] BP212 positive photoresist was spin-coated onto an aluminum film using a spin coater. After baking, a negative photomask and an MA6 lithography machine were used for photolithography exposure. The exposed sample was then placed in a NaOH solution for development and etching of the aluminum film to prepare an ion exchange mask.
[0025] The residual photoresist was removed by acetone and anhydrous ethanol in sequence, the sample was rinsed with deionized water and dried with nitrogen gas for later use.
[0026] The glass transition plate was first immersed in molten KNO3 at 400 °C for 2 h; then immersed in molten AgNO3:NaNO3=1:10 at 320 °C for 5 h; and annealed at 300 °C for 24 h.
[0027] Use aluminum etching solution to remove the aluminum film from the surface of the glass adapter plate.
[0028] Preferably, the rare-earth element-doped polymer solution is spin-coated onto the glass waveguide, specifically as follows:
[0029] Take Er(TMHD)3 powder, add toluene solvent to dissolve it completely, then add PMMA polymer material, sonicate until the solution is mixed evenly, and then magnetically stir at room temperature until a clear, transparent pink solution is obtained, thus obtaining Er(TMHD)3-doped PMMA polymer solution.
[0030] Er(TMHD)3-doped PMMA polymer solution was spin-coated onto a low-loss surface glass waveguide.
[0031] Preferably, the evanescent wave interlayer coupling between the glass optical waveguide and the on-chip optical waveguide on the photonic integrated chip is specifically achieved by using the gain material as a binder to realize the evanescent wave interlayer coupling between the glass optical waveguide and the on-chip optical waveguide on the photonic integrated chip.
[0032] Preferably, the fabrication of evanescent wave interlayer coupling between the glass optical waveguide and the on-chip optical waveguide on the photonic integrated chip includes the following steps:
[0033] First, a glass waveguide is fabricated using a thermionic exchange process, and a glass waveguide amplifier is prepared by spin-coating a gain material; the film is not rigidly bonded during fabrication.
[0034] Secondly, alignment marks are made in the non-optical areas of the photonic integrated chip and the glass adapter plate;
[0035] Next, the photonic integrated chip is inverted and placed on the glass adapter plate. The position is adjusted by a six-axis precision alignment platform, and the overlap of the alignment marks is monitored in real time until the deviation between the waveguide port and the center of the tapered structure is <0.3 μm.
[0036] Finally, controllable pressure is applied to uniformly fill the gap between the glass waveguide and the on-chip waveguide on the photonic integrated chip with the gain material, and the whole thing is heated until the gain material is completely solidified to ensure long-term mechanical strength.
[0037] The present invention has the following beneficial effects:
[0038] (1) This invention fabricates evanescent field glass waveguide amplifiers on ion-exchange low-loss surface glass waveguides using a simple spin coating method, and performs gain tests on them using an LED vertical pump gain testing system. The spin coating method of this invention is not only applicable to glass waveguides fabricated by ion exchange, but also to glass waveguides fabricated by other methods such as femtosecond laser direct-write waveguides in glass.
[0039] (2) In this invention, spin-coated, refractive index-matched gain material is used as an adhesive for evanescent wave interlayer coupling between glass waveguides and photonic integrated chips in optoelectronic co-packaging based on glass adapter plates. An LED vertical pump array is introduced into the packaging structure to provide pump light, thereby realizing evanescent wave interlayer coupling with loss compensation function. The gain material is not only suitable as an adhesive for evanescent wave interlayer coupling between glass waveguides and on-chip optical waveguides on photonic integrated circuits in optoelectronic co-packaging based on glass adapter plates, but can also be used as an adhesive in schemes where any waveguide (silicon, silicon nitride, lithium niobate, etc.) is coupled through evanescent wave interlayer coupling. The number of waveguides coupled through evanescent wave interlayer coupling is a positive integer greater than or equal to 1.
[0040] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments, but the present invention is not limited to the embodiments. Attached Figure Description
[0041] Figure 1 This is a schematic diagram of the structure of a glass waveguide amplifier according to an embodiment of the present invention;
[0042] Figure 2 The figure shows the experimental results of the gain performance test of the glass waveguide amplifier according to an embodiment of the present invention;
[0043] Figure 3 This is a schematic diagram of the optoelectronic co-packaging structure according to an embodiment of the present invention;
[0044] Figure 4 This is a cross-sectional schematic diagram of the optoelectronic co-packaging structure according to an embodiment of the present invention. Detailed Implementation
[0045] This invention provides an optoelectronic co-package structure, including an optical waveguide amplifier, an optical fiber connector, an LED vertical pump array, an electronic integrated chip, a photonic integrated chip, an electrical interconnection section, and an evanescent wave interlayer coupling structure; electrical signals are transmitted between the chips through electrical interconnection structures such as TGV and RDL; wherein, the evanescent wave interlayer coupling between the optical waveguide amplifier and the photonic integrated chip uses a gain material as a binder.
[0046] See Figure 1 The diagram shown is a schematic of the structure of a glass waveguide amplifier according to an embodiment of the present invention, including a glass substrate 1, a surface-type glass waveguide 2 prepared by ion exchange, and a gain material cladding 3 prepared by spin coating.
[0047] The principle of glass ion exchange waveguide fabrication is as follows: When a glass material containing monovalent cation A comes into contact with an external source containing monovalent cation B, due to the presence of a contact chemical potential gradient (ion concentration gradient) or electric field, ions B are forced to move into the glass, thus entering the glass. Meanwhile, to maintain electroneutrality, the glass's internal ions A move outwards, resulting in ion exchange between the glass and the external ion source. Both the ions exchanged out of the glass and those exchanged into it act as modifiers of the glass mesh; they do not participate in the basic glass structure. However, differences in polarizability, ionic radius, or stress generated by the exchange between the two types of ions cause a change in the refractive index of the exchange region, thereby forming a glass waveguide.
[0048] The principle of the evanescent field glass waveguide amplifier described in this invention is as follows. When light propagates from a high-refractive-index medium to a low-refractive-index medium, according to Snell's law, the angle of refraction after passing through the interface will be greater than the angle of incidence towards the interface. When the sine of the angle of incidence is greater than the ratio of the low refractive index to the high refractive index, the incident light wave undergoes total internal reflection at the interface, meaning no light can be refracted through the interface into the low-refractive-index medium. Simultaneously, according to electromagnetic principles, the electric and magnetic fields of the light wave should remain continuous at the interface. Therefore, in the case of total internal reflection, although light cannot propagate from the high-refractive-index medium to the low-refractive-index medium, the electromagnetic field of the light at the interface can extend into the low-refractive-index medium in an exponentially decaying manner, forming an optical surface evanescent wave on the low-refractive-index medium side of the interface. Because the electromagnetic field strength of the surface evanescent wave decays exponentially along the normal direction of the interface, there will only be a significant field strength within a few wavelengths from the interface. This invention spin-coats a low-refractive-index gain medium onto a surface-type glass waveguide. When the signal light propagates in the waveguide core layer, total internal reflection occurs between the waveguide and the gain medium, resulting in an evanescent wave entering the gain medium. Under the excitation of the pump light, the evanescent wave undergoes stimulated emission transition, and the emitted photons are then transmitted back into the waveguide, forming a positive feedback gain for the optical signal.
[0049] The fabrication method of the evanescent field glass waveguide amplifier is as follows: First, among the glass types currently used in factories for preparing optoelectronic co-packaging, a glass type with a high alkali metal sodium ion content is selected for ion exchange to prepare a low-loss surface-type glass waveguide; then, a rare-earth element-doped polymer solution is prepared in a certain proportion; finally, the rare-earth element-doped polymer solution is spin-coated onto the glass waveguide and cured in an oven to prepare the evanescent field glass waveguide amplifier. Specifically, the fabrication process is illustrated using D263T glass as an example, including the following steps:
[0050] ① Select D263T glass with a refractive index of 1.5098 at 1550 nm, and deposit a 200 nm thick aluminum film on the glass surface using physical vapor deposition.
[0051] ② BP212 positive photoresist was spin-coated onto an aluminum film using a spin coater. The film was preheated to 95 °C for 10 min, followed by exposure lithography using a negative photomask and an MA6 lithography machine. Finally, the exposed sample was immersed in NaOH solution for development and etching of the aluminum film, producing a 6 μm wide ion-exchange mask. Afterwards, residual photoresist was removed sequentially using acetone and anhydrous ethanol, the sample was rinsed with deionized water, and dried with nitrogen gas for later use.
[0052] ③ Ion exchange: The glass sample was first placed in molten KNO3 at 400 °C for 2 h; then placed in molten AgNO3:NaNO3 = 1:10 at 320 °C for 5 h; finally, annealed at 300 °C for 24 h. The prepared low-loss surface-type glass waveguide had a refractive index difference of 0.0137 and a transmission loss of 0.58 dB / cm.
[0053] ④ Take 0.01 g Er(TMHD)3 powder into a 25 ml × 25 ml weighing bottle, add 0.2 ml of toluene solvent to dissolve it completely, then add 1 g of PMMA (solvent: 4 ml butyl acetate) polymer material, sonicate for 10 min to mix the solution evenly, and then magnetically stir at room temperature for 48 h to obtain a clear and transparent pink solution.
[0054] ⑤ The Er(TMHD)3-doped PMMA polymer solution was spin-coated onto a low-loss surface-type glass waveguide. The spin coater was set to 500 r / min for 5 s and then to 5000 r / min for 30 s. After that, the film was hardened on a hot plate at 95 ℃ for 5 min. The thickness of the active cladding was about 1 μm, and the refractive index of the cladding was 1.4819 at 1550 nm. Finally, the prepared sample was placed in an oven and hardened at 120 ℃ for 2 h to complete the fabrication of the evanescent field glass waveguide amplifier.
[0055] The gain performance of the evanescent field glass waveguide amplifier described above was tested. In this embodiment, a 1545 nm wavelength signal light was transmitted through the optical waveguide amplifier, and the gain was then measured using a spectrometer. Figure 2 The signal data curve is shown in ①. Vertical pumping was performed using a 365 nm LED, and the signal light was enhanced to [value missing] at a pump power of 60 mW. Figure 2 As shown in curve ②, the signal light is enhanced to [value] at a pump power of 162 mW. Figure 2 As shown in curve ③, the signal light is enhanced to [value] at a pump power of 230 mW. Figure 2 As shown in curve ④, according to the definition of relative gain, Gain(dB) = 10log(P) pump on / P pump off ), and calculations show that the waveguide produced an optical gain of 4.37 dB.
[0056] See Figure 3 As shown, this is an embodiment of the optoelectronic co-packaging structure of the present invention. Figures (a) and (b) illustrate two common specific structures. In the optoelectronic co-packaging structure of this embodiment, the glass adapter plate 1 is provided with electroplated glass vias, redistribution layers, bumps, etc., to realize electrical interconnect layers 9 in the vertical and horizontal directions. The electronic integrated chip 6 and the photonic integrated chip 7 are flip-chip bonded to the glass adapter plate 1 and electrically connected through the electrical interconnect layers 9. An optical waveguide 2 is fabricated on the glass adapter plate 1 to realize the optical interconnection between the fiber optic connector 4 and the on-chip optical waveguide 8 on the photonic integrated chip 7. The fiber optic connector 4 is used to connect external optical fibers. A gain material 3 is spin-coated on the optical waveguide 2 as an upper cladding layer to fabricate an evanescent field glass waveguide amplifier, which achieves optical amplification under the action of the LED vertical pump array 5. Meanwhile, the gain material 3, acting as a binder for evanescent wave interlayer coupling between the glass waveguide 2 and the on-chip waveguide 8 on the photonic integrated chip 7 in the optoelectronic co-packaging based on the glass adapter plate 1, can achieve a significant degree of optical amplification under the action of the LED vertical pump array 5, compensating for the coupling loss of the evanescent wave interlayer coupling. The LED vertical pump array 5 is located 5-10 mm above the gain material, and the divergence angle of the LED lamp is within 90°. According to the light intensity distribution curve, the radiation intensity distribution can be calculated, and approximately 80% of the LED energy can be concentrated on a 1 cm² area. 2In terms of area, compared to traditional laser end-pumping based on spatial optical coupling or wavelength division multiplexer coupling, LED vertical pumping is inexpensive and readily available. Furthermore, since the signal light only needs to pass through an isolator and be directly input into the waveguide via the front-end fiber, the pump light provided by the LED does not require a coupler to couple with the signal light into the waveguide, effectively avoiding the additional losses caused by coupling. In addition, the small-volume LED vertical pump array can be designed and placed in any suitable position within the package, allowing the LED pump light to uniformly illuminate the entire waveguide, achieving the same gain at lower power as high-power laser pumping, resulting in higher pump efficiency.
[0057] Evanescent wave coupling between layers typically employs a tapered waveguide structure to transform a stable waveguide optical field into an evanescent wave field that enters the cladding, then couples to the next waveguide layer and gradually transforms back into a stable waveguide optical field, thus achieving optical transmission between different waveguide layers. The cross-section of evanescent wave coupling between an ion-exchanged glass waveguide and an on-chip optical waveguide on a photonic integrated chip is shown below. Figure 4 As shown, the gain material solution spin-coated onto the glass waveguide is thermosetting, enabling micro-regional selective bonding at the glass interface under low-temperature conditions. The cured gain material has a thickness of 1–2 μm and a refractive index of 1.4819. The small coupling spacing and well-matched refractive index result in low coupling loss. Furthermore, the gain material achieves significant optical amplification under LED vertical pumping, sufficient to compensate for coupling loss. Therefore, this invention proposes using the gain material as an adhesive for evanescent wave layer coupling between the glass waveguide and the on-chip optical waveguide on the photonic integrated chip in a glass-interface-based optoelectronic co-package.
[0058] Specifically, the fabrication steps of the evanescent wave interlayer coupling structure are as follows: First, a glass waveguide is fabricated using a thermionic exchange process, and a glass waveguide amplifier is fabricated by spin-coating gain material. During fabrication, a hard film is not applied initially. Second, alignment marks (such as metal crosshairs or grating structures) are fabricated in the non-optical areas of the photonic integrated chip and the glass adapter plate. Then, the photonic integrated chip is inverted and placed on the glass adapter plate, and its position is adjusted using a six-axis precision alignment platform. The overlap of the alignment marks is monitored in real time until the deviation between the waveguide port and the center of the tapered structure is <0.3 μm. Finally, controllable pressure is applied to uniformly fill the gaps with gain material to 1-3 μm. The entire assembly is heated to 120℃ (the specific temperature is set according to different materials) to completely solidify the gain material and ensure long-term mechanical strength.
[0059] Specifically, the fabrication process of the optoelectronic co-packaging is as follows: Glass grooves and holes are created on a glass adapter plate using laser-induced etching; a glass waveguide is then fabricated on the glass adapter plate, and gain material is spin-coated onto the glass waveguide; an electrical interconnect layer is then created by electroplating and filling TGV; an electronic integrated chip and a photonic integrated chip are flip-chip bonded to the glass adapter plate to achieve electrical connection through the electrical interconnect layer, while the on-chip optical waveguide on the photonic integrated chip and the glass waveguide are aligned to achieve evanescent wave coupling; an optical fiber connector is aligned and connected to the other end of the glass waveguide and fixed with UV-curable adhesive; and an adapter plate with an LED vertical pump array is bonded to the adapter plate with the fabricated optical waveguide (and electronic integrated chip, photonic integrated chip, etc.) to achieve the LED vertical pump array positioned above the waveguide amplifier and the evanescent wave coupling.
[0060] Furthermore, as a waveguide for evanescent wave interlayer coupling, glass waveguides, due to their weak confinement characteristics, have a higher tolerance for alignment deviations. This means that packaging does not require ultra-precision equipment, reducing packaging process difficulty and cost, improving yield in mass production, and reducing coupling loss. Simultaneously, glass waveguides exhibit high power tolerance, capable of transmitting kilowatt-level continuous light or megawatt-level pulsed light without melting or refractive index distortion due to localized heating. Glass is non-absorbent, resistant to UV aging, and exhibits almost no drift in refractive index and mode field characteristics under humidity (0%-95%) or illumination conditions. When temperature changes (-40℃~85℃), the interface does not develop gaps or deformation due to thermal stress, demonstrating excellent environmental stability and high reliability. It is suitable for harsh environments such as outdoor communication, industrial sensing, and aerospace, and its coupling performance can remain largely unchanged for over 10 years.
[0061] As can be seen, this invention addresses the problem of high coupling loss in traditional coupling methods by proposing a spin-coated gain material that can serve as a binder for evanescent wave coupling between waveguides. This material is thermosetting, enabling waveguide bonding at low temperatures. Furthermore, it meets the requirements of small coupling spacing and well-matched refractive indices for evanescent wave coupling. Simultaneously, it achieves significant optical amplification under vertical pumping by a light-emitting diode (LED), compensating for the coupling loss between evanescent wave layers. It is low-cost, structurally simple and compact, highly efficient, small in size, and easy to integrate, showing strong application potential in three-dimensional photonic integration and optoelectronic co-packaging. Based on this, this invention proposes a one-step spin-coating method for fabricating evanescent field glass waveguide amplifiers on ion-exchanged surface-type glass waveguides. The gain material acts as the upper cladding of the surface-type glass waveguide. Optical amplification is achieved through stimulated emission transitions of the evanescent field between the waveguide and the gain medium under pump light excitation. This method is simple, low-cost, widely compatible, and easy to integrate. This invention utilizes spin coating to fabricate evanescent field glass waveguide amplifiers, which are not limited to ion-exchange fabricated glass waveguides but are also applicable to glass waveguides fabricated by other methods, such as femtosecond laser direct-write waveguides in glass. The loss-compensated evanescent wave interlayer coupling is suitable for interlayer coupling between any waveguides (silicon waveguides, silicon nitride waveguides, polymer waveguides, glass waveguides, etc.) fabricated on any substrate (glass, silicon, lithium niobate, etc.).
[0062] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.
Claims
1. A photoelectric co-packaging structure, characterized in that, It includes a glass transition plate and an electrical interconnect layer, an electronic integrated chip, a photonic integrated chip, a glass waveguide, and an LED vertical pump array disposed on the glass transition plate; The photonic integrated chip is electrically connected to the electronic integrated chip through the electrical interconnect layer; The on-chip optical waveguide on the photonic integrated chip and the glass optical waveguide are optically interconnected through evanescent interlayer coupling; the glass optical waveguide and the optical fiber in the optical fiber connector are optically interconnected through end-face coupling. The gain material spin-coated onto the glass waveguide serves as the upper cladding, achieving optical amplification under the action of the LED vertical pump array.
2. The optoelectronic co-packaging structure according to claim 1, characterized in that, The glass optical waveguide enables optical interconnection between the fiber optic connector and the on-chip optical waveguide on the photonic integrated chip, specifically as follows: The gain material is used as a binder to achieve evanescent wave interlayer coupling between the glass optical waveguide and the on-chip optical waveguide on the photonic integrated chip.
3. The optoelectronic co-packaging structure according to claim 1, characterized in that, The glass waveguide is a surface-type glass waveguide obtained through ion exchange.
4. The optoelectronic co-packaging structure according to claim 1, characterized in that, The glass waveguide is a glass waveguide fabricated by femtosecond laser direct writing in glass.
5. A method for fabricating an optoelectronic co-packaging structure, characterized in that, Includes the following steps: Laser-induced etching is used to groove and drill holes in glass on a glass adapter plate. A glass waveguide is fabricated on a glass adapter plate, and a gain material is spin-coated onto the glass waveguide to obtain an optical waveguide amplifier. Fabricate an electrical interconnect layer on a glass adapter plate; Electronic integrated chips and photonic integrated chips are flip-chip bonded to a glass transition plate and electrically connected to an electrical interconnect layer, respectively; an evanescent wave interlayer coupling structure is fabricated between a glass optical waveguide and an on-chip optical waveguide on the photonic integrated chip. Fix the fiber optic connector to the end face of the glass waveguide; The adapter board with the LED vertical pump array is bonded to the glass adapter board, so that the LED vertical pump array is located above the coupling structure between the optical waveguide amplifier and the evanescent wave layer.
6. The method for preparing the optoelectronic co-packaging structure according to claim 5, characterized in that, The process of fabricating a glass optical waveguide on a glass transition plate and then spin-coating a gain material onto the glass waveguide to obtain an optical waveguide amplifier includes the following steps: Low-loss surface-type glass waveguides are fabricated by performing ion exchange on the surface of a glass transition plate. A rare earth element-doped polymer solution is prepared and then spin-coated onto a glass waveguide.
7. The method for preparing the optoelectronic co-packaging structure according to claim 6, characterized in that, The process of ion exchange on the surface of a glass transition plate to fabricate a low-loss surface-type glass waveguide includes the following steps: D263T glass was selected, and a 200 nm thick aluminum film was physically vapor-deposited on the glass surface. BP212 positive photoresist was spin-coated onto an aluminum film using a spin coater. After baking, a negative photomask and an MA6 lithography machine were used for photolithography exposure. The exposed sample was then placed in a NaOH solution for development and etching of the aluminum film to prepare an ion exchange mask. The residual photoresist was removed by acetone and anhydrous ethanol in sequence, the sample was rinsed with deionized water and dried with nitrogen gas for later use. The glass transition plate was first immersed in molten KNO3 at 400 °C for 2 h; then immersed in molten AgNO3:NaNO3=1:10 at 320 °C for 5 h; and annealed at 300 °C for 24 h. Use aluminum etching solution to remove the aluminum film from the surface of the glass adapter plate.
8. The method for preparing the optoelectronic co-packaging structure according to claim 6, characterized in that, The rare-earth element-doped polymer solution is prepared and then spin-coated onto the glass waveguide, specifically as follows: Take Er(TMHD)3 powder, add toluene solvent to dissolve it completely, then add PMMA polymer material, sonicate until the solution is mixed evenly, and then magnetically stir at room temperature until a clear, transparent pink solution is obtained, thus obtaining Er(TMHD)3-doped PMMA polymer solution. Er(TMHD)3-doped PMMA polymer solution was spin-coated onto a low-loss surface glass waveguide.
9. The method for preparing the optoelectronic co-packaging structure according to claim 5, characterized in that, The evanescent wave interlayer coupling between the glass optical waveguide and the on-chip optical waveguide on the photonic integrated chip is specifically achieved by using the gain material as a binder to realize the evanescent wave interlayer coupling between the glass optical waveguide and the on-chip optical waveguide on the photonic integrated chip.
10. The method for preparing the optoelectronic co-packaging structure according to claim 9, characterized in that, The fabrication of evanescent wave interlayer coupling between the glass optical waveguide and the on-chip optical waveguide on the photonic integrated chip includes the following steps: First, a glass waveguide is fabricated using a thermionic exchange process, and a glass waveguide amplifier is prepared by spin-coating a gain material; the film is not rigidly bonded during fabrication. Secondly, alignment marks are made in the non-optical areas of the photonic integrated chip and the glass adapter plate; Next, the photonic integrated chip is inverted and placed on the glass adapter plate. The position is adjusted by a six-axis precision alignment platform, and the overlap of the alignment marks is monitored in real time until the deviation between the waveguide port and the center of the tapered structure is <0.3 μm. Finally, controllable pressure is applied to uniformly fill the gap between the glass waveguide and the on-chip waveguide on the photonic integrated chip with the gain material, and the whole thing is heated until the gain material is completely solidified to ensure long-term mechanical strength.