Substrate support carrier with multiple ceramic disks

Abstract

The substrate support carrier includes an electrostatic chuck (ESC) assembly including a top ceramic disk having a recess formed by a lower surface of the top ceramic disk, a bottom ceramic disk having a hole through the bottom ceramic disk, an upper bonding layer interposed between the lower surface of the top ceramic disk and an upper surface of the bottom ceramic disk, and a porous plug within at least one of the recess of the top ceramic tray and the aperture of the bottom ceramic tray; a temperature control base; and a lower bonding layer interposed between the lower surface of the bottom ceramic tray and the upper surface of the temperature control base.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to a substrate support carrier having porous features embedded therein for use in a substrate processing chamber, and more particularly, to a substrate support carrier having a plurality of ceramic disks. Background Art

[0002] Electrostatic chucks are used in a variety of manufacturing and processing operations. In semiconductor manufacturing, electrostatic chucks are used to support substrates in processing chambers. Currently, electrostatic chucks use a single ceramic disc with a clamping electrode and resistive heater embedded within it. Some electrostatic chucks further incorporate a press-fit or glued-in porous plug within the ceramic disc. This design mechanically secures the porous plug within the single ceramic disc, for example, by retaining it within a dielectric sleeve via a press or interference fit. Careful machining is required to provide this fit. Additional complexity is associated with preventing undesirable cracking of the ceramic disc during manufacture or operation of the electrostatic chuck.

[0003] Therefore, there is a need for an electrostatic chuck that can be manufactured and operated with reduced complexity. Summary of the Invention

[0004] Embodiments of the present disclosure provide a substrate support carrier for use in a processing chamber. The substrate support carrier includes an electrostatic chuck (ESC) assembly, the ESC assembly including a top ceramic plate having a recess formed by a lower surface of the top ceramic plate, a bottom ceramic plate having a hole extending through the bottom ceramic plate, an upper bonding layer interposed between the lower surface of the top ceramic plate and the upper surface of the bottom ceramic plate, and a porous plug positioned within at least one of the recess of the top ceramic plate and the hole of the bottom ceramic plate; a temperature control base; and a lower bonding layer interposed between the lower surface of the bottom ceramic plate and the upper surface of the temperature control base.

[0005] Embodiments of the present disclosure also provide a substrate support carrier for use in a processing chamber. The substrate support carrier includes an electrostatic chuck (ESC) assembly, the ESC assembly including a top ceramic plate and a bottom ceramic plate, an upper bonding layer interposed between a lower surface of the top ceramic plate and an upper surface of the bottom ceramic plate; a temperature controlled base; a lower bonding layer interposed between a lower surface of the bottom ceramic plate and an upper surface of the temperature controlled base; and bonding edge protection features disposed at an edge of at least one of the upper bonding layer and the lower bonding layer.

[0006] Embodiments of the present disclosure further provide an electrostatic chuck (ESC) assembly. The ESC assembly includes a top ceramic disk having a clamping electrode embedded therein; a bottom ceramic disk having a plurality of resistive heaters embedded therein; a bonding layer interposed between a lower surface of the top ceramic disk and an upper surface of the bottom ceramic disk; a first electrical feedthrough connected to the clamping electrode; a plurality of second electrical feedthroughs, each connected to one of the plurality of resistive heaters and routed within the bottom ceramic disk to a lower surface of the bottom ceramic disk; and a plurality of electrical terminals brazed to a lower surface of the lower surface of the bottom ceramic disk. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] In order to obtain the manner in which the above-mentioned features of the present disclosure are obtained and to be able to understand in detail, a more particular description of the present disclosure, which has been briefly summarized above, may be obtained by reference to the embodiments of the present disclosure illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only embodiments of the present disclosure and are therefore not to be considered limiting of its scope, as the present disclosure may admit to other equally effective embodiments.

[0008] Figure 1 is a schematic cross-sectional view of an exemplary substrate support carrier for use in a processing chamber.

[0009] Figure 2A 、 Figure 2B and Figure 2C Depicted is a cross-sectional view of a porous plug with an in-situ cannula according to one or more embodiments.

[0010] Figure 3A 、 Figure 3B 、 Figure 3C 、 Figure 3D 、 Figure 3E 、 Figure 3F 、 Figure 3G 、 Figure 3H 、 Figure 3I 、 Figure 3J 、 Figure 3K 、 Figure 3L 、 Figure 3M 、 Figure 3N 、 Figure 3O 、 Figure 3P 、 Figure 3Q 、 Figure 3R 、 Figure 3S 、 Figure 3T 、 Figure 3U 、 Figure 3V 、 Figure 3W 、 Figure 3X and Figure 3Y is a cross-sectional view of a portion of an electrostatic chuck (ESC) assembly according to one or more embodiments.

[0011] Figure 4A 、 Figure 4B 、 Figure 4C 、 Figure 4D 、 Figure 4E 、 Figure 4F 、 Figure 4G 、 Figure 4H 、 Figure 4I 、 Figure 4J 、 Figure 4K 、 Figure 4L 、 Figure 4M 、 Figure 4N 、 Figure 4O 、 Figure 4P 、 Figure 4Q 、 Figure 4R 、 Figure 4S 、 Figure 4T and Figure 4U is a cross-sectional view of a portion of a substrate support carrier according to one or more embodiments.

[0012] Figure 5A 、 Figure 5B 、 Figure 5C 、 Figure 5D and Figure 5E is a cross-sectional view of a portion of a substrate support carrier according to one or more embodiments.

[0013] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. DETAILED DESCRIPTION

[0014] Embodiments described herein provide a substrate support carrier having multiple ceramic disks with a bonding layer interposed between the disks. A clamping electrode is embedded in one of the disks. A resistive heater is embedded in another of the disks. Embodiments described herein provide an assembly of a porous plug extending through the multiple disks and the bonding layer, a configuration for protecting the bonding layer from corrosion, and electrical wiring connecting the clamping electrode and the resistive heater to a power source.

[0015] Figure 1FIG1 is a schematic cross-sectional view of an exemplary substrate support carrier 100 for use in a processing chamber. The substrate support carrier 100 includes an electrostatic chuck (ESC) assembly 102 and a temperature controlled pedestal 104. The ESC assembly 102 includes a top ceramic plate 106 and a bottom ceramic plate 108. The top ceramic plate 106 and the bottom ceramic plate 108 are each formed from a ceramic material, such as aluminum oxide, aluminum nitride, sapphire, or zirconium oxide. The top ceramic plate 106 and the bottom ceramic plate 108 may have different functions (e.g., the top ceramic plate 106 includes a clamping electrode embedded therein, and the bottom ceramic plate 108 includes a resistive heater embedded therein, as described below) and may be formed from different ceramic materials suitable for their functions. A bonding layer (hereinafter referred to as an "upper bonding layer") 110 is interposed between a lower surface 106A of the top ceramic plate 106 and an upper surface 108A of the bottom ceramic plate 108 facing the top ceramic plate 106. The upper bonding layer 110 secures and thermally couples the top ceramic plate 106 to the bottom ceramic plate 108. The temperature control base 104 is formed of a metal such as aluminum. The temperature control base 104 is secured to cylindrical support posts (not shown) that extend through the wall of the processing chamber to support the substrate support carrier 100 thereon. The substrate support carrier 100 may generally have a circular shape, but other shapes capable of supporting substrates W, such as rectangular or oval, may be utilized.

[0016] The top ceramic plate 106 includes an upper surface 112 for supporting the substrate W thereon. The clamping electrodes 114 (at Figure 1 The clamping electrodes 114 are each connected to the top ceramic disk 106 via an electrical feedthrough ( Figure 1 The ESC assembly 102 is connected to a power supply 116 (not shown) that is routed through the ESC assembly 102 and connected to electrical terminals (e.g., Kovar pins, Pogo pins) 118 within an insulating interface 120 at the lower surface 108B of the bottom ceramic disk 108. The insulating interface 120 can be disposed within the temperature controlled base 104. The power supply 116 imposes a voltage on the clamping electrode 114 to form an electromagnetic field at the interface between the upper surface 112 of the top ceramic disk 106 and the substrate W. The electromagnetic field interacts with the substrate W to clamp the substrate W to the upper surface 112 of the top ceramic disk 106. The clamping electrode 114 can be biased to provide a monopolar or bipolar chuck.

[0017] The resistive heater 122 is embedded in the bottom ceramic disk 108. The resistive heater 122 is connected to the bottom ceramic disk 108 via an electrical feedthrough ( Figure 1 108 ) is connected to a power source 124 and to electrical terminals (eg, Kovar pins) 118 within the insulating interface 120 at the lower surface 108B of the bottom ceramic disk 108 .

[0018] It should be noted that the specific example embodiments described herein are merely some possible examples of ESC assemblies having multiple ceramic disks according to the present disclosure and do not limit the possible configurations, specifications, or the like of ESC assemblies according to the present disclosure. For example, an ESC assembly may include three ceramic disks, wherein an additional ceramic disk has a resistive heater and radio frequency (RF) electrodes embedded therein, an RF electrode embedded therein, and gas distribution channels embedded therein. The additional ceramic disk may be placed between the bottom ceramic disk 108 and the temperature control base 104, or between the top ceramic disk 106 and the bottom ceramic disk 108. In another example, the resistive heater and / or RF electrode may be embedded in the top ceramic disk 106 or in the bottom ceramic disk 108.

[0019] The temperature control base 104 includes a channel 126 disposed therein for circulating a fluid through the temperature control base 104. The fluid (typically a liquid such as ) flows from a temperature control unit (not shown) through channel 126 and back to the temperature control unit. In some processes, the fluid is used to cool the temperature control pedestal 104 to reduce the temperature of the ESC assembly 102 and the substrate W placed thereon. Conversely, the fluid can be used to increase the temperature of the temperature control pedestal 104 to heat the ESC assembly 102 and the substrate W thereon. In some cases, the heat from the resistive heater 122 is combined with the heat transfer from the temperature control pedestal 104 to the fluid to maintain the ESC assembly 102 or the substrate W at a set point temperature.

[0020] A bonding layer (hereinafter referred to as "lower bonding layer") 128 is interposed between lower surface 108B of bottom ceramic disk 108 and upper surface 104A of temperature control base 104, which faces bottom ceramic disk 108. Upper surface 104A of temperature control base 104 faces lower surface 104B of temperature control base 104, which is coupled to a cylindrical support column. Lower bonding layer 128 secures and thermally couples bottom ceramic disk 108 to temperature control base 104.

[0021] The upper bonding layer 110 and the lower bonding layer 128 may be formed of a metal bonding material, such as aluminum, manganese molybdenum, platinum, nickel, a platinum nickel composite or a combination thereof, aluminum silicon carbide (AlSiC), molybdenum (Mo) or aluminum oxide (aluminum oxide, Al2O3), or an organic bonding material, such as silicone resin or acrylic resin.

[0022] The ESC assembly 102 can further include a gas channel 130 embedded in the top ceramic disk 106. In some embodiments, a gas channel (not shown) is embedded in the temperature control base 104. When a substrate is held by the ESC assembly 102, a backside gas (e.g., helium, nitrogen, or argon) is supplied from a gas source (not shown) through flow apertures 132 and the gas channel 130 to help control the temperature of the substrate W. The gas channel 130 can have a diameter between about 1 μm and about 5 mm.

[0023] The flow aperture 132 is disposed within the substrate support carrier 100. Figure 1 As shown, flow aperture 132 extends from lower surface 104B of temperature control base 104 to gas channel 130. Flow aperture 132 includes a first opening 134 formed through ESC assembly 102 and lower bonding layer 128, and a second opening 136 formed through temperature control base 104. Second opening 136 is aligned with first opening 134 such that second opening 136 and first opening 134 overlap by at least 10%. The gas is maintained at a pressure sufficient for the gas to function as a heat conduction path between substrate W and ESC assembly 102. First opening 134 and second opening 136 of flow aperture 132 may have a height between about 1 μm and about 20 mm and a width between about 10 μm and about 10 mm.

[0024] During processing, some gases are known to degrade the upper bonding layer 110 and the lower bonding layer 128, which are exposed to the gases at the flow aperture 132 and / or at exposed portions at the periphery of the substrate support carrier 100. To isolate the upper bonding layer 110 and the lower bonding layer 128 from the process gases, a seal 138 is positioned around the periphery of the upper bonding layer 110 and the periphery of the lower bonding layer 128, and an O-ring 140 is positioned in the first opening 134 of the flow aperture 132 formed in the lower bonding layer 128. In some embodiments, the seal 138 is positioned around the periphery of the upper bonding layer 110 or the periphery of the lower bonding layer 128. The seal 138 and the O-ring 140 are formed of a material that is resistant to degradation due to exposure to process gases. In this example, the seal 138 and the O-ring 140 each contact the temperature control base 104 and the bottom ceramic disk 108 and are compressed therebetween, which prevents the flow of process gas, thereby isolating the lower bonding layer 128 .

[0025] A porous plug 142 is optionally disposed within the ESC assembly 102 within the first opening 134 of the flow aperture 132. The porous plug 142 is formed of a porous metal material, such as a metal nitride (e.g., aluminum nitride (AlN)), a metal carbide, a metal silicide, a metal oxide (e.g., aluminum oxide (Al2O3)), or a combination thereof, or a porous semiconductor material that may be a nitride, carbide, silicide, oxide, or a combination thereof. The porous plug 142 has pores having a size between 10 nm and approximately 100 μm and a porosity, such as a porosity range between approximately 5% and approximately 95%. The porosity may be in the form of features disposed in a periodic or non-periodic manner within the porous plug 142, such as pores or channels, that allow gas to pass through the porous plug 142 from the area near the first opening 134 and the second opening 136 and into fluid communication with the gas channel 130. When the substrate W is not positioned on the top ceramic plate 106, the porous plug 142 further prevents ionized particles or ionized gases from passing through the processing region in the processing chamber and from entering the isolated portion of the volume defined by the openings 134 and 136. The porous plug 142 may have a diameter between about 0.5 μm and about 5 mm (e.g., about 1 mm). The porous plug 142 may be cylindrical or mushroom-shaped with a wider portion at the end of the porous plug 142.

[0026] In some embodiments, the porous plug 142 has an in-situ sleeve 202 that at least partially encapsulates the porous plug 142, such as Figure 2A 、 Figure 2B and Figure 2C As shown. The in-situ sleeve 202 can be formed during the manufacture of the porous plug 142. The in-situ sleeve 202 can have a thickness between about 0.1 μm and about 3 mm. The in-situ porous plug can be made of a metal oxide or metal nitride ceramic material, such as aluminum oxide (Al2O3), aluminum nitride (AlN), titanium oxide (TiO), titanium nitride (TiN), yttrium oxide (Y2O3), mixtures thereof, and combinations thereof. The in-situ sleeve 202 can have the same length as the porous plug 142, completely encapsulating the porous plug. Figure 2A The in-situ sleeve 202 may have a shorter length than the porous plug 142. Figure 2B The in-situ sleeve 202 may partially enclose the porous plug 142 and extend beyond the porous plug 142. Figure 2C The porous plug 142 in.

[0027] Porous plug assembly in ESC assembly

[0028] like Figure 1As shown, a porous plug 142 extends through the ESC assembly 102, which includes a top ceramic disk 106, a bottom ceramic disk 108, and an upper bonding layer 110 interposed between the top ceramic disk 106 and the bottom ceramic disk 108. The porous plug 142 may extend within the top ceramic disk 106, the bottom ceramic disk 108, or both the top ceramic disk 106 and the bottom ceramic disk 108. Figure 1 As shown, a method of forming a porous plug 142 extending through the ESC assembly 102 is described herein.

[0029] First, if Figure 3A As shown, a top ceramic disk 106 and a bottom ceramic disk 108 are patterned. In some embodiments, the top ceramic disk 106 and the bottom ceramic disk 108 are sintered ceramic bodies formed from a ceramic material (such as alumina, aluminum nitride, sapphire, or zirconium oxide) by any suitable ceramic forming method (such as hot isostatic pressing (HIP) or doctor blade forming). During patterning, grooves 302 from the lower surface 106A of the top ceramic disk 106, blades 304 from the grooves 302 within the top ceramic disk 106, and holes 306 through the bottom ceramic disk 108 can be formed by micromachining (such as drilling or laser ablation). The grooves 302 and holes 306 can be of different sizes or the same size. The grooves 302 and holes 306 are aligned such that the grooves 302 and holes 306 overlap by at least 10% at the lower surface 106A of the top ceramic disk 106 and the upper surface 108A of the bottom ceramic disk 108.

[0030] 1Single porous plug design

[0031] In some embodiments, the porous plug 142 is formed from a single porous plug that covers most of the top ceramic disk 106 and the bottom ceramic disk. Figure 3B and Figure 3C As shown, a single porous plug 142 is disposed in a recess 302 of the top ceramic disk 106. The porous plug 142 may include an in-situ sleeve 202 encapsulating the porous plug 142, such as Figure 3C As shown. The porous plug 142 may have a length greater than the depth of the groove 302 and thus extend into the hole 306 of the bottom ceramic disk 108. The porous plug 142 (and the in-situ sleeve 202, if included) may be press-fit into the groove 302 of the top ceramic disk 106. The porous plug 142 (and the in-situ sleeve 202, if included) may be bonded to the inner surface of the groove 302 of the top ceramic disk 106 using an adhesive.

[0032] After or before depositing the single porous plug 142, the top ceramic disk 106 and the bottom ceramic disk 108 are bonded by interposing the upper bonding layer 110 between the lower surface 106A of the top ceramic disk 106 and the upper surface 108A of the bottom ceramic disk 108, as shown in FIG. Figure 3D 、 Figure 3E and Figure 3F In some embodiments, the top ceramic disc 106 and the bottom ceramic disc 108 are bonded to the temperature control base 104 simultaneously. Figure 3C and Figure 3D As shown, the upper bonding layer 110 may terminate without contacting the porous plug 142 (and the in-situ sleeve 202, if included). The upper bonding layer 110 may at least partially contact the porous plug 142, as shown. Figure 3F In some embodiments, the upper bonding layer 110 is a metal bonding layer formed of aluminum, manganese molybdenum, platinum, nickel, a platinum-nickel composite, or a combination thereof, aluminum silicon carbide (AlSiC), molybdenum (Mo), aluminum oxide (aluminum oxide, Al2O3), or other suitable metal bonding materials, and the bonding process is performed at a temperature between about 300°C and about 1500°C. In some embodiments, the upper bonding layer 110 is an organic bonding layer formed of silicone resin, acrylic resin, or other suitable organic bonding materials, and the bonding process is performed at a temperature between about 20°C and about 300°C. The temperature range of the bonding process is selected so that the adhesive in the bonding material does not burn at high temperatures and does not remain at low temperatures.

[0033] like Figure 3G and Figure 3H As shown, an outer sleeve 308 may be further disposed around the porous plug 142 (and the in-situ sleeve 202, if included). Figure 3G and Figure 3H In the example shown, the outer sleeve 308 does not extend into the top ceramic disk 106. However, in some other embodiments, the groove 302 ( Figure 3A ) is comparable to the hole 306 ( Figure 3A ) is wider to allow the outer sleeve 308 to extend into the groove 302 of the top ceramic disk 106, leaving a small gap (e.g., 10 μm to 1 mm) between the outer sleeve 308 and the inner surface of the groove 302 of the top ceramic disk 106. The outer sleeve 308 can be formed of an insulating plastic, such as polyetheretherketone (PEEK), (polyetherimide), or a dielectric such as aluminum oxide or aluminum oxide nitride. The outer sleeve 308 can further help prevent particle generation due to plasma-bonding material interactions. If a metallic bonding material is incorporated, the outer sleeve 308 can further prevent wafer bonding arcing. The gap 310 between the upper bonding layer 110 and the outer sleeve 308 is filled with a dielectric material (e.g., air or a polymer) to suppress particle generation and prevent wafer bonding arcing.

[0034] In some embodiments, the porous plug 142 is formed from a single porous plug that covers a majority of either the top ceramic disk 106 or the bottom ceramic disk 108. Figure 3I and Figure 3J As shown, the porous plug 142 covers most of the holes 306 ( Figure 3A ), and does not extend to the groove 302 of the top ceramic disk 106 ( Figure 3A The porous plug 142 may extend beyond the hole 306 of the bottom ceramic disk 108 to the lower surface 106A of the top ceramic disk 106 ( Figure 3A ), as shown in Figure 3I , or partially extending to the lower surface 106A of the top ceramic disk 106, as shown in Figure 3J As shown in Figure 3K 、 Figure 3L 、 Figure 3M and Figure 3N As shown, the porous plug 142 covers most of the groove 302 of the top ceramic disk 106 and does not extend into the hole 306 of the bottom ceramic disk 108. Figure 3L As shown, the porous plug 142 may partially extend to the upper surface 108A ( Figure 3A As shown in ). Figure 3I 、 Figure 3J 、 Figure 3K and Figure 3L As shown, the upper bonding layer 110 may terminate without contacting the porous plug 142. Figure 3M and Figure 3N As shown, the upper bonding layer 110 may contact the porous plug 142, wherein the upper bonding layer 110 includes through holes 312 that at least partially overlap the porous features in the porous plug 142. Figure 3A The porous plug 142 in FIG. 1 may have a length shorter than the depth of the top ceramic disk 106, and the upper bonding layer 110 protrudes into the remaining portion of the groove 302 of the top ceramic disk 106, as shown in FIG. Figure 3N shown.

[0035] 2Multiple porous plug designs

[0036] In some embodiments, the porous plug 142 is formed of a top porous plug 142A covering a majority of the top ceramic disk 106 and a bottom porous plug 142B covering a majority of the bottom ceramic disk 108. Figure 3O 、 Figure 3P 、 Figure 3Q 、 Figure 3R 、 Figure 3S 、 Figure 3T 、 Figure 3U 、 Figure 3V 、 Figure 3W 、 Figure 3X and Figure 3Y The top porous plug 142A can be press-fitted into the groove 302 ( Figure 3A ) or bonded to the inner surface of the groove 302 of the top ceramic disk 106 using an adhesive. The bottom porous plug 142B can be press-fitted into the hole 306 ( Figure 3A ), or incorporated into the hole 306 ( Figure 3A In some embodiments, the top porous plug 142A is integrally manufactured as part of the top ceramic disk 106, and the bottom porous plug 142B is integrally manufactured as part of the bottom ceramic disk 108.

[0037] like Figure 3O 、 Figure 3P 、 Figure 3Q 、 Figure 3R and Figure 3S As shown, the upper bonding layer 110 may terminate without contacting the top porous plug 142A or the bottom porous plug 142B. Figure 3U As shown, upper bonding layer 110 may contact top porous plug 142A and / or bottom porous plug 142B, wherein upper bonding layer 110 includes through-holes 312 that at least partially overlap porous features in top porous plug 142A and bottom porous plug 142B.

[0038] like Figure 3P and Figure 3S As shown, the top porous plug 142A and the bottom porous plug 142B may at least partially contact each other. Figure 3O 、 Figure 3Q and Figure 3R As shown, the top porous plug 142A and the bottom porous plug 142B may not contact each other, with a gap therebetween. The top porous plug 142A has a groove 302 ( Figure 3A ) of the same length to cover the entire groove 302, as shown in FIG. Figure 3O 、 Figure 3P 、 Figure 3Q 、 Figure 3S 、 Figure 3T 、 Figure 3U 、 Figure 3V and Figure 3W The top porous plug 142A may have a groove 302 ( Figure 3A The depth of the top ceramic disk 106 and the top porous plug 142A is shorter than that of the top ceramic disk 106 and the top porous plug 142A, as shown in FIG. Figure 3R 、 Figure 3X and Figure 3Y As shown. Figure 3S and Figure 3T As shown, the top porous plug 142A and the bottom porous plug 142B may not be aligned with each other, but may have an overlap. Figure 3T As shown, the dielectric sleeve 314 is formed of a metal oxide or metal nitride ceramic material, such as aluminum oxide (Al2O3), aluminum nitride (AlN), titanium oxide (TiO), titanium nitride (TiN), yttrium oxide (Y2O3), mixtures thereof, and combinations thereof. The dielectric sleeve may include a plastic, such as polyetheretherketone (PEEK) or (polyetherimide), which may be positioned between the top porous plug 142A and the bottom porous plug 142B. A dielectric sleeve 314 may serve as an insulator to prevent particle formation during plasma-bonding material interaction. In the case of a substantially conductive bonding material, the dielectric sleeve 314 may help suppress luminescence in the pores and arcing from the wafer to the cooling plate.

[0039] like Figure 3V 、 Figure 3W 、 Figure 3X and Figure 3Y As shown, the porous plug 142 may include a center porous plug 142C between a top porous plug 142A and a bottom porous plug 142B. Figure 3V As shown, the central porous plug 142C may be positioned within the opening in the upper bonding layer 110. Figure 3W 、 Figure 3X and Figure 3Y As shown, the central porous plug 142C may protrude into the top ceramic disk 106 and the bottom ceramic disk 108. Figure 3V 、 Figure 3W and Figure 3X As shown, the upper bonding layer 110 may contact the central porous plug 142C. Figure 3Y As shown, the upper bonding layer 110 may terminate without contacting the central porous plug 142C. Figure 3V 、 Figure 3W 、 Figure 3X and Figure 3Y As shown, the center porous plug 142C may contact the bottom porous plug 142B. Figure 3Y As shown, the center porous plug 142C and the bottom porous plug 142B may not contact each other with a gap therebetween.

[0040] Incorporating edge protection in ESC components

[0041] The substrate support carrier 100 including the ESC assembly 102 is exposed to process gases and process reaction byproducts of the substrate processing performed within the processing chamber. When some of these gases and byproducts enter the upper bonding layer 110 inserted between the top ceramic disk 106 and the bottom ceramic disk 108 in the ESC assembly 102, they can damage and erode the upper bonding layer 110. Embodiments of the ESC assembly 102 are described herein in which the periphery of the upper bonding layer 110 and / or the first opening 134 ( Figure 1 ) is arranged in combination with edge protection features.

[0042] 1Combined edge protection with staggered features at the perimeter edge

[0043] In some embodiments, as Figure 4A 、 Figure 4B and Figure 4C As shown, the bonding edge protection features at the perimeter of the upper bonding layer 110 are staggered features, such as steps 402 and protrusions 404, which extend from the top ceramic disk 106, through the upper bonding layer 110, and into the bottom ceramic disk 108. Similar staggered features apply to the bottom ceramic disk 108 and the temperature control base 104 (not shown). The upper surface 104A of the temperature control base 104 can be covered with a thin layer of insulating material (not shown). These staggered features on the peripheral edge of the ESC assembly 102 form one or more labyrinths that effectively reduce the paths of process gases and process reaction byproducts and substantially prevent such gases and byproducts from reaching the upper bonding layer 110, thereby reducing undesirable contamination.

[0044] 2. Combined edge protection with O-ring or encapsulation layer

[0045] In some embodiments, the bonding edge protection feature at the periphery of the upper bonding layer 110 is a seal formed of a material that is resistant to degradation due to exposure to process gases. The seal may also protect the lower bonding layer 128. Figure 4D As shown, the seal may be two O-rings 406, one at the periphery of the upper bonding layer 110 and one at the periphery of the lower bonding layer 128. Figure 4E As shown, the seal may be an O-ring 408 covering both the perimeter of the upper bonding layer 110 and the perimeter of the lower bonding layer 128. Figure 4F As shown, the seal may be a conformal deposition layer 410 of a plasma-resistant material, such as a sealant, that encapsulates the upper bonding layer 110, the bottom ceramic disk 108, and the lower bonding layer 128. PTFE, etc.

[0046] 3. Combined edge protection with spray-on

[0047] In some embodiments, the bonding edge protection feature at the perimeter of the upper bonding layer 110 is a sprayed material 412. The sprayed material 412 can also protect the lower bonding layer 128. Methods of forming such a sprayed material 412 at the perimeter of the upper bonding layer 110 are described herein.

[0048] First, if Figure 4G As shown, a pocket 414 is formed between the top ceramic disk 106 and the bottom ceramic disk 108. The pocket 414 may have a height between about 0.1 mm and about 20 mm, and a width between about 0.1 mm and about 10 mm. Figure 4H As shown, bag 414 is filled with spray material 412. Figure 4I As shown, unwanted portions of the sprayed material 412 (e.g., overfill of the sprayed material) are removed by machining. Pocket 414 can be filled using atomic layer deposition with a single or multiple layers of dielectric, such as aluminum oxide, rare earth oxides, or combinations thereof. Unwanted portions of the deposited material 412 can be removed by machining.

[0049] 4. Bonding edge protection with dissimilar bonding materials

[0050] In some embodiments, the first opening 134 ( Figure 1 ) and / or the bonding edge protection features at the periphery of the upper bonding layer 110 are different from the dissimilar bonding material 416 of the upper bonding layer 110. Figure 4J As shown, the dissimilar bonding material 416 may be positioned within the first opening 134 ( Figure 1 As shown in FIG) the edge of the upper bonding layer 110 is adjacent. Figure 4K As shown, the dissimilar bonding material 416 can be positioned adjacent to the perimeter of the lower bonding layer 128 within the first opening 134. The dissimilar bonding material 416 can be positioned adjacent to the perimeter of the upper bonding layer 110 and adjacent to the perimeter of the upper bonding layer 110 in the first opening 134, wherein the O-ring 140 is positioned in the upper bonding layer 110 (e.g., Figure 4L ), wherein the O-ring 140 is in the upper bonding layer 110 and the lower bonding layer 128 (as shown Figure 4M ), wherein the O-ring 140 is in the lower bonding layer 128 (as Figure 4N as shown), or without O-ring (as shown Figure 4O As described). Figure 4P As shown, the dissimilar bonding material 416 can be positioned adjacent to the perimeter of the upper bonding layer 110 within the seal (e.g., O-ring 140). The dissimilar bonding material 416 can be positioned adjacent to the perimeter of the upper bonding layer 110 and the perimeter of the lower bonding layer 128, wherein the O-ring 140 is external to the upper bonding layer 110 and the lower bonding layer 128 (e.g., Figure 4Q ), wherein the O-ring 140 is outside the lower bonding layer 128 (as Figure 4R As shown), wherein the O-ring 140 is outside the upper bonding layer 110, or there is no O-ring, as shown Figure 4T . The dissimilar bonding material 416 may have a convex or concave crescent shape and be formed of a material resistant to halogen plasma corrosion. In some embodiments, the plasma resistant polymer material 418 is positioned adjacent to the edge of the upper bonding layer 110 (e.g., Figure 4U The polymer material 418 may be dissimilar to the upper bonding layer 110 and the lower bonding layer 128.

[0051] Electrical connections in ESC assembly

[0052] like Figure 1 As shown, the clamping electrode 114 is embedded in the top ceramic disk 106, and the resistive heater 122 is embedded in the bottom ceramic disk 108. 5A to 5D , the resistive heater 122 is connected to an electrical feedthrough 502 that is routed through the bottom ceramic disk 108 to the lower surface 108B of the bottom ceramic disk 108, where an electrical terminal 118 is brazed. The electrical terminals 118 may have different sizes from one another. The electrical terminals 118 are brazed to pads (not shown) at the lower surface 108B of the bottom ceramic disk 108 and may each have a surface feature to ensure connection to the pads. The clamping electrode 114 is connected to an electrical feedthrough 504 that is routed through the ESC assembly 102 (including the top ceramic disk 106, the upper bonding layer 110, and the bottom ceramic disk 108) to the lower surface 108B of the bottom ceramic disk 108. Embodiments of such electrical connections for the clamping electrode 114 within the ESC assembly 102 are described herein.

[0053] In some embodiments, as Figure 5A and Figure 5B As shown, an electrical feedthrough 504 connected to the clamping electrode 114 embedded in the top ceramic disk 106 is routed via a metal bump 506 disposed within an opening in the upper bonding layer 110. The opening in the upper bonding layer 110 surrounding the metal bump 506 may be filled with a dielectric material (e.g., air, epoxy, ceramic, or plastic sleeve). Figure 5A and Figure 5B As shown, the electrical feedthrough 504 extends from the clamping electrode 114 to the lower surface 108B of the bottom ceramic disk 108 where it contacts the electrical terminal 118. Figure 5A As shown, the electrical feedthrough 504 can be positioned at the center of the ESC assembly 102 and connected to the electrical terminal 118 at the center of the ESC assembly 102. Figure 5BAs shown, the electrical feedthrough 504 may be positioned spaced from the center of the ESC assembly 102 and connected to the electrical terminal 118 spaced from the center of the ESC assembly 102 .

[0054] In some embodiments, as Figure 5C and Figure 5D As shown, an electrical feedthrough 504 connected to the clamping electrode 114 embedded in the top ceramic disk 106 is routed within the top ceramic disk 106 and terminates at the lower surface of the top ceramic disk 106, where the electrical feedthrough 504 contacts an opening extending through the upper bonding layer 110 and the electrical terminal 118 of the bottom ceramic disk 108. The opening of the upper bonding layer 110 surrounding the electrical terminal 118 may be filled with a dielectric material (e.g., air, epoxy, ceramic, or plastic sleeve). Figure 5C As shown, the electrical feedthrough 504 can be positioned at the center of the ESC assembly 102 and connected to the electrical terminal 118 at the center of the ESC assembly 102. Figure 5D As shown, the electrical feedthroughs 504 may be positioned at the peripheral edge of the ESC assembly 102 and connected to the electrical terminals 118 at the peripheral edge of the ESC assembly 102. Figure 5E As shown, the electrical feedthrough 504 may be positioned spaced from the center of the ESC assembly 102 and connected to the electrical terminal 118 spaced from the center of the ESC assembly 102 .

[0055] It should be noted that although Figure 5A and Figure 5C A clamping electrode 114 is shown in FIG. Figure 5B 、 Figure 5D and Figure 5E Two clamping electrodes 114 are shown in FIG. 1 , but more clamping electrodes 114 and corresponding electrical feedthroughs 504 may be embedded in the ESC assembly 102 .

[0056] Embodiments described herein provide a substrate support carrier having a top ceramic disk, a bottom ceramic disk, and a bonding layer inserted between the top and bottom ceramic disks. A clamping electrode is embedded in the top ceramic disk and connected to a power source via an electrical feedthrough routed through the top ceramic disk, the bonding layer, and the bottom ceramic disk. A resistive electrode is embedded in the bottom ceramic disk and connected to a power source via an electrical feedthrough routed through the bottom ceramic disk. A porous plug, either a single porous plug or an assembly of multiple porous plugs, may be inserted through the top and bottom ceramic disks. Embodiments of bonding edge protection for the bonding layer are also described.

[0057] While the foregoing is directed to embodiments described herein, other and further embodiments may be devised without departing from the basic scope thereof, and the scope of the same is determined by the following claims.

Claims

1. A substrate support carrier for use in a processing chamber, the substrate support carrier comprising: Electrostatic chuck (ESC) assembly, including: a top ceramic disk having a groove formed from a lower surface of the top ceramic disk; a bottom ceramic disk having an aperture therethrough; an upper bonding layer interposed between the lower surface of the top ceramic disc and the upper surface of the bottom ceramic disc; and a porous plug within at least one of the recess of the top ceramic disk and the hole of the bottom ceramic disk; Temperature controlled base; and A lower bonding layer is inserted between the lower surface of the bottom ceramic disk and the upper surface of the temperature control base. 2 . The substrate support carrier of claim 1 , wherein the porous plug comprises an in-situ sleeve at least partially encapsulating the porous plug.

3. The substrate support carrier of claim 1 wherein the porous plugs extend within the holes of the bottom ceramic disk and do not extend within the recesses of the top ceramic disk.

4. The substrate support carrier of claim 1 wherein the porous plugs extend within the recesses of the top ceramic disk and do not extend within the holes of the bottom ceramic disk.

5. The substrate support carrier of claim 1, wherein the porous plug comprises a top porous plug extending within the recess of the top ceramic disk and a bottom porous plug extending within the hole of the bottom ceramic disk.

6. The substrate support carrier according to claim 5, wherein The top porous plug is integrally fabricated as part of the top ceramic disk, and the bottom porous plug is integrally fabricated as part of the bottom ceramic disk. 7 . The substrate support carrier of claim 5 , wherein the porous plug further comprises a center porous plug positioned between the top porous plug and the bottom porous plug, the center porous plug extending within the opening of the upper bonding layer.

8. A substrate support carrier for use in a processing chamber, the substrate support carrier comprising: Electrostatic chuck (ESC) assembly, including: Top ceramic plate; bottom ceramic disc; and an upper bonding layer interposed between the lower surface of the upper ceramic disc and the upper surface of the bottom ceramic disc; Temperature control base; a lower bonding layer interposed between the lower surface of the bottom ceramic disk and the upper surface of the temperature control base; and A bonding edge protection feature is disposed at an edge of at least one of the upper bonding layer and the lower bonding layer.

9. The substrate support carrier of claim 8, wherein the bonding edge protection feature comprises one or more protrusions extending from the top ceramic disk, through the opening in the upper bonding layer, and into the bottom ceramic disk spaced from the center of the substrate support carrier.

10. The substrate support carrier of claim 8, wherein the bonding edge protection feature comprises a first O-ring at the perimeter of the upper bonding layer and a second O-ring at the perimeter of the lower bonding layer.

11. The substrate support carrier of claim 8, wherein the bonding edge protection feature comprises an O-ring covering both the perimeter of the upper bonding layer and the perimeter of the lower bonding layer.

12. The substrate support carrier of claim 8, wherein the bonding edge protection feature comprises a layer of plasma resistant material encapsulating the upper bonding layer, the bottom ceramic disk, and the lower bonding layer.

13. The substrate support carrier of claim 8, wherein the bonding edge protection feature comprises a sprayed material at the perimeter of the upper bonding layer.

14. The substrate support carrier of claim 8, wherein the bonding edge protection feature comprises a dissimilar bonding material disposed at the edge of at least one of the upper bonding layer and the lower bonding layer.

15. The substrate support carrier of claim 8, wherein the bonding edge protection feature comprises a plasma resistant polymer material disposed at the edge of the upper bonding layer.

16. An electrostatic chuck (ESC) assembly, comprising: a top ceramic disk having a clamping electrode embedded therein; a bottom ceramic disk having a plurality of resistive heaters embedded therein; a bonding layer interposed between the lower surface of the top ceramic disc and the upper surface of the bottom ceramic disc; a first electrical feedthrough connected to the clamping electrode; a plurality of second electrical feedthroughs, each connected to one of the plurality of resistive heaters and disposed within the bottom ceramic disk to the lower surface of the bottom ceramic disk; as well as A plurality of electrical terminals are brazed at the lower surface of the lower surface of the bottom ceramic disk.

17. The ESC assembly of claim 16, further comprising: A metal bump is located in the center of the ESC assembly within the opening of the bonding layer, wherein The first electrical feedthrough is routed through the metal bump and connected at the center of the ESC assembly to one of the plurality of electrical terminals at the lower surface of the bottom ceramic disk.

18. The ESC assembly of claim 16, further comprising: a metal bump within the opening of the bonding layer and spaced from the center of the ESC assembly, wherein The first electrical feedthrough is routed to the lower surface of the bottom ceramic disk via the metal bumps, spaced apart from the center of the ESC assembly.

19. The ESC assembly of claim 16, wherein The first electrical feedthrough is routed within the top ceramic disk and connected to one of the plurality of electrical terminals that extend through the opening in the bonding layer and through the bottom ceramic disk at the center of the ESC assembly.

20. The ESC assembly of claim 16, wherein The first electrical feedthrough is routed within the top ceramic disk and connected to one of the plurality of electrical terminals extending through the opening in the bonding layer and through the bottom ceramic disk spaced apart from the center of the ESC assembly.

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