Laser etching control method and system for RFID antennas

Abstract

The present application relates to the technical field of laser etching, and particularly relates to a laser etching control method and system for an RFID antenna. The method comprises the following steps: acquiring an actual model at a current time and a design model at a corresponding time; determining an offset region according to a deviation between the actual model and the design model; determining an actual etching route, a design etching route and an offset etching route; determining an etching route offset degree according to an area proportion of the offset region, a length proportion of the offset etching route and a skeleton line length of a maximum connected domain of the offset region; determining a turning point of a deviation change of a nearest deviation path segment at the current time; determining an etching deviation complexity according to offset changes on both sides of the turning point and a maximum position deviation at a sampling point position; and performing etching control in combination with the etching route offset degree and the etching deviation complexity. The present application can optimize a control strategy, improve control precision and achieve better control effect.

Description

Technical Field

[0001] The present invention relates to the technical field of laser etching, and in particular to a laser etching control method and system for RFID antennas. Background Art

[0002] RFID antennas are components used in radio devices to transmit or receive electromagnetic waves. They are converters that convert guided waves propagating along a transmission line into electromagnetic waves propagating through an unbounded medium, and vice versa. Laser etching technology is widely used in the manufacture of RFID tag antennas, particularly in high-frequency and ultra-high-frequency tags.

[0003] In related technologies, the laser etching control of RFID antennas is mainly achieved by analyzing the difference between the laser etching point and the reference drawing at each moment. However, this feedback has a delay. When the laser etching parameters cannot be adjusted in time through the feedback of the laser etching results, the subsequent etching error may be increased, the control accuracy is insufficient, and the effect of the laser etching for RFID antennas is reduced. Summary of the Invention

[0004] In order to solve the technical problem in the related art that analyzing the difference between the laser etching point at each moment and the reference drawing will increase the subsequent etching error, insufficient control accuracy, and reduce the laser etching effect for RFID antennas, the present invention provides a laser etching control method and system for RFID antennas, and the technical solutions adopted are as follows:

[0005] The present invention proposes a laser etching control method for an RFID antenna, the method comprising:

[0006] Obtain the actual model at the current moment and the design model at the corresponding moment during the laser etching process;

[0007] According to the deviation between the actual model and the design model, the offset area where the offset occurs during the etching process is determined; the skeleton lines of the actual model, the design model and the offset area are determined to obtain the actual etching route, the designed etching route and the offset etching route;

[0008] The offset degree of the etching route of the actual model is determined based on the area ratio of the offset region in the design model, the length ratio of the offset etching route in the design etching route, and the skeleton line length of the maximum connected domain in the offset region;

[0009] The designed etching route is sampled periodically to obtain sampling points. The position deviation between the designed etching route and the actual etching route is analyzed at each sampling point along the designed etching route to identify the deviation path segment. The turning point of the deviation change of the nearest deviation path segment at the current moment is determined. The complexity of the etching deviation is determined based on the offset changes on both sides of the turning point and the maximum position deviation at the sampling point.

[0010] Etching control is performed based on the degree of etching route deviation and the complexity of etching deviation.

[0011] Furthermore, determining the offset region where offset occurs during the etching process based on the deviation between the actual model and the design model includes:

[0012] The intersection and union of the actual model and the design model at the current moment on the two-dimensional plane are determined, and the intersection is subtracted from the union to obtain the offset area generated during the etching process.

[0013] Furthermore, the skeleton line is determined by a morphological thinning operation.

[0014] Furthermore, determining the offset degree of the etching route of the actual model according to the area ratio of the offset region in the design model, the length ratio of the offset etching route in the design etching route, and the skeleton line length of the maximum connected domain of the offset region includes:

[0015] Determine the offset index based on the area ratio of the offset region in the design model and the length ratio of the offset etching route in the design etching route;

[0016] The product of the skeleton line length of the largest connected domain in the offset area and the offset index is calculated and normalized as the offset degree of the etching route.

[0017] Furthermore, the offset index is determined by combining the area ratio of the offset region in the design model and the length ratio of the offset etching route in the design etching route, including:

[0018] Calculate the ratio of the area of ​​the offset region to the area of ​​the design model as the area ratio indicator;

[0019] Calculate the ratio of the length of the offset etching route to the length of the designed etching route as the length ratio indicator;

[0020] The product value of the area ratio index and the length ratio index is normalized and used as the offset index.

[0021] Furthermore, analyzing the position deviation between the designed etching route and the actual etching route at each sampling point to identify the deviation path segment includes:

[0022] The starting point of the designed etching route is coincided with the starting point of the actual etching route, and the point of the actual etching route closest to each sampling point is determined as a control point;

[0023] The Euclidean distance between the sampling point and the control point is taken as a position deviation, and an actual etching route segment with a position deviation greater than a preset deviation distance is taken as a deviation route segment.

[0024] Further, the turning point is an extreme point of deviation change, and the turning point of deviation change of the deviation route segment closest to the current time is determined, including:

[0025] In the deviation route segment closest to the current time, a two-dimensional coordinate system is constructed with a path order as an abscissa and a position deviation as an ordinate, a coordinate point of the position deviation between each sampling point and the control point in the two-dimensional coordinate system is determined, and a deviation change curve is obtained by connecting the coordinate points;

[0026] The sampling point with a slope of 0 in the deviation change curve is taken as the turning point.

[0027] Further, the etching deviation complexity is determined according to the deviation change on both sides of the turning point and the maximum position deviation at the position of the sampling point, including:

[0028] The curve between the turning points closest to each other on both sides of the turning point in the deviation change curve is taken as an analysis line.

[0029] The two analysis lines are respectively subjected to linear fitting, the slope of the fitted straight line is determined, the sum of the slopes corresponding to the two analysis lines is normalized and taken as a slope analysis value.

[0030] The sum of the slope analysis values of all the turning points is taken as a deviation change index.

[0031] The product value of the deviation change index and the maximum position deviation at the position of the sampling point is calculated, and the product value is normalized and taken as an etching deviation complexity.

[0032] Further, the etching control is performed in combination with the etching route deviation degree and the etching deviation complexity, including:

[0033] The etching route deviation degree and the etching deviation complexity are taken as two dimensions to construct an etching error vector, the etching error vector at the current time is input to a PLC controller, and a control instruction is output, the control instruction being used to control the power and the scanning speed in the laser etching process.

[0034] On the other hand, a laser etching control system for an RFID antenna is also provided, the system including a memory, a processor, and a computer program stored in the memory and running on the processor, the processor implementing the steps of the foregoing method when executing the computer program.

[0035] The present invention has the following beneficial effects:

[0036] In an embodiment of the present invention, by analyzing the difference between the actual model and the design model at the current moment, the offset region where the offset occurs during the etching process is determined, and the actual etching route, the design etching route, and the offset etching route are determined based on the skeleton line. The acquisition of the offset region represents the offset characteristics of the two-dimensional plane. The skeleton line can perform skeleton analysis on the plane figure to obtain lines that only retain the morphological characteristics, which facilitates subsequent further offset analysis. First, the offset degree of the etching route of the actual model is determined based on the area ratio of the offset region to the design model, the length ratio of the offset etching route to the design etching route, and the skeleton line length of the largest connected domain in the offset region. The offset degree of the etching route represents the offset characteristics under the combined area dimension and the skeleton line analysis dimension, thereby accurately representing the overall offset from the initial moment to the current moment. Then, it is necessary to analyze the offset trend at the current moment. In this embodiment of the present invention, the offset complexity of the etching deviation is determined by the offset change of the nearest deviation path segment at the current moment and the maximum position deviation at the sampling point position, which can accurately represent the etching deviation at the current moment. Therefore, etching control is performed by combining the offset degree of the etching route and the complexity of the etching deviation. Compared with the traditional method of directly analyzing the differences between the current laser point and the corresponding point of the design model, the present invention can predict errors in advance and thus conduct early control, optimize the control strategy according to the overall status and current trends, and improve the control accuracy to achieve better control effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the technical solutions and advantages of the embodiments of the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the prior art descriptions. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0038] Figure 1 A flow chart of a laser etching control method for an RFID antenna provided by one embodiment of the present invention.

[0039] Figure 2 A schematic diagram of a laser etching scenario provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0040] To further illustrate the technical means and effectiveness of the present invention in achieving its intended objectives, the following, in conjunction with the accompanying drawings and preferred embodiments, describes in detail the specific implementation, structure, features, and effectiveness of a laser etching control method and system for RFID antennas according to the present invention. In the following description, references to "one embodiment" or "another embodiment" do not necessarily refer to the same embodiment. Furthermore, specific features, structures, or characteristics of one or more embodiments may be combined in any suitable manner.

[0041] Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.

[0042] The specific operations for laser etching of RFID antennas are as follows:

[0043] (1) Material preparation: Select a suitable substrate, such as PET film, and laminate aluminum foil or other conductive materials on it.

[0044] (2) Design antenna pattern: Design the antenna pattern and size according to the application requirements of the RFID tag.

[0045] (3) Laser settings: Adjust the laser parameters, including power, pulse width, repetition rate, etc., to suit specific material and pattern requirements.

[0046] (4) Focusing the laser beam: Use a focusing lens to focus the laser beam onto a very small spot to improve the etching accuracy.

[0047] (5) Cooling system: During the etching process, a cooling system (such as water cooling or air cooling) is used to control the temperature of the material to prevent overheating.

[0048] (6) Etching process: The laser beam moves across the material according to a predetermined pattern, removing unwanted parts point by point to form an antenna pattern.

[0049] (7) Cleaning: After etching is completed, clean the antenna to remove residual dust and debris.

[0050] (8) Inspection: Perform visual and electrical inspection on the etched antenna to ensure there are no defects.

[0051] (9) Packaging: Combine the etched antenna with the RFID chip and package it to form a complete RFID tag.

[0052] The following describes in detail a specific solution of a laser etching control method for an RFID antenna provided by the present invention with reference to the accompanying drawings.

[0053] See also Figure 1, which shows a flow chart of a laser etching control method for an RFID antenna provided by one embodiment of the present invention, the method comprising:

[0054] S101: Acquire the actual model at the current moment and the design model at the corresponding moment during the laser etching process.

[0055] An RFID antenna is a component in a radio device used to transmit or receive electromagnetic waves. An RFID antenna is a transducer that converts guided waves propagating along a transmission line into electromagnetic waves propagating through an unbounded medium, or vice versa. Laser etching technology is widely used in the manufacture of RFID tag antennas, particularly in high-frequency and ultra-high-frequency tags. Figure 2 , Figure 2 A schematic diagram of a laser etching scenario provided for an embodiment of the present invention. Laser etching is performed by combining the laser etching channel on the laser control card with the printed metal plate. The shape and path of the laser beam can be precisely controlled to achieve the desired antenna pattern.

[0056] It is understandable that laser etching has high requirements for precision, and the factors affecting etching accuracy mainly include changes in material properties, fluctuations in laser parameters, environmental factors, and material surface conditions. Laser etching used for RFID antennas may have some errors. When the laser etching parameters cannot be adjusted in time through feedback from the laser etching results, subsequent etching errors may increase and the laser etching effect may be reduced.

[0057] In an embodiment of the present invention, the actual model etched at the current moment is mainly determined during the etching process. The actual model is the model obtained by etching from the starting moment to the current moment. Optical coherence imaging technology (OCT) can be used to obtain the actual model of the completed etching path during the etching process in real time.

[0058] Among them, the design model is the pre-designed model information, that is, the standard design drawing of the actual model. It can be understood that since the model is analyzed in real time, the actual model is not complete at the middle moment of etching. Therefore, in the embodiment of the present invention, only the etching area of ​​the design model reaching the current moment is analyzed, that is, the actual model at the current moment is analyzed with the design model completed at the current moment, and is not analyzed with the overall design model.

[0059] During the specific analysis process, the etching point at the current moment can be directly connected to the starting point to obtain the corresponding design model and actual model. Of course, other settings can also be made according to the etching requirements, and there is no restriction on this.

[0060] Among them, OCT can realize real-time measurement and feedback of hole depth during laser processing. It can quickly reconstruct the groove cross-sectional morphology and three-dimensional surface morphology, and is suitable for real-time monitoring of laser etching.

[0061] S102: Determine the offset region where offset occurs during the etching process based on the deviation between the actual model and the design model; determine the skeleton lines of the actual model, the design model and the offset region to obtain the actual etching route, the design etching route and the offset etching route.

[0062] Before laser etching an RFID antenna, the operator sets an acceptable error range (tolerance). As long as the actual etching result falls within this range, the system considers the etching successful. If the actual result exceeds the preset tolerance, the system may trigger an alarm, notify the operator, and decide whether to stop etching or take other remedial measures according to a pre-set procedure. In this embodiment of the present invention, within the allowable error range of laser etching of the RFID antenna, real-time dynamic control is used to further reduce etching errors.

[0063] When performing etching analysis, the first thing to do is to determine the areas where offsets occur during the etching process, that is, the areas where the actual model and the designed model do not match.

[0064] Furthermore, in some embodiments of the present invention, based on the deviation between the actual model and the design model, the offset area where the offset occurs during the etching process is determined, including: determining the intersection and union of the actual model and the design model on the two-dimensional plane at the current moment, subtracting the intersection from the union, and obtaining the offset area where the offset occurs during the etching process.

[0065] It's important to note that since the starting points of the actual model and the design model are the same during the etching process, the starting points can be compared to each other, and the areas enclosed by the actual model and the design model can be analyzed separately, specifically by analyzing the intersection and union on a two-dimensional plane. The difference between the union and the intersection can indicate the deviation between the actual model and the design model during the etching process, resulting in the offset area.

[0066] The skeleton line is the specific skeleton information of the model, and the skeleton line can be processed using a morphological refinement operation. The specific morphological refinement operation is a well-known technology and will not be described in detail.

[0067] In the embodiment of the present invention, the skeleton line of the actual model is the actual etching route; the skeleton line of the design model is the designed etching route, and the skeleton line of the offset area is the offset etching route.

[0068] It should be specifically explained that since the offset region may include multiple different regions, that is, the offset may occur in multiple different etching segments, the offset etching route is not a complete route, and may include multiple small-scale regions.

[0069] S103: Determine the etching route offset degree of the actual model according to the area proportion of the offset region in the design model, the length proportion of the offset etching route in the design etching route, and the skeleton line length of the maximum connected domain of the offset region.

[0070] In the embodiments of the present application, after the offset region is determined, offset degree analysis needs to be performed according to the offset region, which can be specifically analyzed in three dimensions, that is, the area of the offset region itself, the total length of the offset etching route, and the skeleton line length of the maximum connected domain of the offset region.

[0071] Specifically, the greater the area proportion of the offset region in the overall design model, the greater the offset generated. Similarly, the greater the length proportion of the offset etching route in the design etching route, the greater the offset effect generated. The worse the skeleton line length of the maximum connected domain of the offset region, the more prominent and obvious the offset effect generated. Therefore, the above-mentioned characteristics can be combined to realize specific analysis of the etching route offset degree at the current time.

[0072] Further, in combination with the above-mentioned characteristics, in some embodiments of the present application, the etching route offset degree of the actual model is determined according to the area proportion of the offset region in the design model, the length proportion of the offset etching route in the design etching route, and the skeleton line length of the maximum connected domain of the offset region, including: determining an offset index in combination with the area proportion of the offset region in the design model and the length proportion of the offset etching route in the design etching route; calculating the product value of the skeleton line length of the maximum connected domain in the offset region and the offset index, and normalizing it as the etching route offset degree.

[0073] That is, the offset index is calculated according to the area of the offset region itself and the total length of the offset etching route, and then the etching route offset degree is determined in combination with the skeleton line length of the maximum connected domain in the offset region.

[0074] Further, in some embodiments of the present application, the offset index is determined in combination with the area proportion of the offset region in the design model and the length proportion of the offset etching route in the design etching route, including: calculating the area ratio of the offset region to the design model as the area proportion index; calculating the length ratio of the offset etching route to the design etching route as the length proportion index; and normalizing the product value of the area proportion index and the length proportion index as the offset index.

[0075] Among them, since the larger the area proportion of the offset region and the larger the length proportion of the offset etching path, both can represent a larger offset effect. Therefore, in an embodiment of the present invention, after calculating the area proportion index and the length proportion index, the product value of the area proportion index and the length proportion index can be directly calculated and normalized as the offset index.

[0076] A path deviation region of the same size may consist of multiple smaller connected regions, indicating intermittent path deviation, or it may consist of a small number of larger connected regions, indicating continuous path deviation. Intermittent path deviation indicates that the deviation was promptly corrected, while continuous path deviation indicates that the deviation could not be corrected in a timely manner. Therefore, it is necessary to further adjust the etching route offset based on the persistence of the path deviation.

[0077] When conducting specific persistence analysis, the skeleton line length of the largest connected domain in the offset area can be effectively characterized. The longer the skeleton line length, the longer the offset effect. Therefore, the skeleton line length of the largest connected domain in the offset area is directly used as a characteristic parameter and combined with the offset index. The product value of the skeleton line length of the largest connected domain in the offset area and the offset index is calculated and normalized as the offset degree of the etching route.

[0078] The etch path deviation degree in the embodiments of the present invention combines the morphological characteristics of the deviation itself and the persistence characteristics of the deviation. Since the etch path deviation degree is analyzed by comparing the deviation area with the completed etched area, it is a relative deviation degree. The greater the relative etch path deviation degree, the more careful etching control is required. Compared with directly analyzing the deviation amount at the final endpoint, this can more accurately and effectively characterize the overall deviation effect.

[0079] S104: Periodically sample the designed etching route to obtain sampling points; analyze the position deviation between the designed etching route and the actual etching route at each sampling point along the designed etching route to identify the deviation path segment; determine the turning point of the deviation change of the deviation path segment closest to the current moment; determine the complexity of the etching deviation based on the offset change on both sides of the turning point and the maximum position deviation at the sampling point position.

[0080] Among them, the sampling period can be specifically 10 milliseconds, that is, the designed etching route is sampled every 10 milliseconds to obtain sampling points. Of course, the sampling period can also be analyzed by sampling frequency, or different sampling periods can be used according to actual detection needs. There is no restriction on this.

[0081] Among them, the complexity of the etching deviation is the deviation effect affected at the current moment. The complexity of the deviation is further analyzed. In the embodiment of the present invention, the complexity of the deviation is specifically analyzed from the offset changes on both sides of the turning point and the maximum position deviation at the sampling point position.

[0082] Furthermore, in some embodiments of the present invention, the position deviation between the designed etching route and the actual etching route is analyzed point by point along the designed etching route to identify the deviation path segment, including: overlapping the starting point of the designed etching route with the actual etching route, and determining the point on the actual etching route closest to each sampling point as the reference point; taking the Euclidean distance between the sampling point and the reference point as the position deviation, and taking the actual etching route segment with a position deviation greater than the preset deviation distance as the deviation path segment.

[0083] The deviation path point is a path segment obtained according to the difference between the designed etching route and the actual etching route. In order to conduct a specific analysis, a sampling point is determined in the designed etching route, and a control point corresponding to the sampling point is determined in the actual etching route.

[0084] In an embodiment of the present invention, the control points are analyzed by close distance to improve the analysis efficiency. Of course, in other embodiments of the present invention, the intelligent model can also be used to match the points between the designed etching route and the actual etching route, and there is no limitation on this.

[0085] Among them, the preset deviation distance is the tolerance distance preset during deviation analysis. Optionally, it can be specifically 0.1 mm, that is, the actual etching path segment with a Euclidean distance between the sampling point and the control point greater than 0.1 mm is used as the deviation path segment.

[0086] Furthermore, in some embodiments of the present invention, the turning point is the extreme point of the deviation change, and determining the turning point of the deviation change of the deviation path segment closest to the current moment includes: in the deviation path segment closest to the current moment, constructing a two-dimensional coordinate system with the path order as the horizontal coordinate and the position deviation as the vertical coordinate, determining the coordinate point of the position deviation between each sampling point and the control point in the two-dimensional coordinate system, and connecting the coordinate points to obtain a deviation change curve; taking the sampling point with a slope of 0 in the deviation change curve as the turning point.

[0087] That is to say, the deviation change curve is determined through curve simulation, and the extreme point with a slope of 0 in the deviation change curve is used as a turning point for specific analysis.

[0088] Furthermore, in some embodiments of the present invention, the complexity of the etching deviation is determined based on the offset change on both sides of the turning point and the maximum position deviation at the sampling point position, including: taking the curve between the other turning points closest to each other on both sides of the turning point in the deviation change curve as the analysis line; performing straight line fitting on the two analysis lines respectively to determine the slope of the fitted straight line, and normalizing the sum of the corresponding slopes of the two analysis lines as the slope analysis value; taking the sum of the slope analysis values ​​of all turning points as the offset change index; calculating the product value of the offset change index and the maximum position deviation at the sampling point position, and normalizing it as the complexity of the etching deviation.

[0089] When analyzing any turning point, it is necessary to analyze its changing characteristics, that is, the changing trends on the left and right sides. Therefore, in an embodiment of the present invention, the curve between the two turning points is used as the analysis line, and the analysis line is a curve with a monotonically increasing trend or a monotonically decreasing trend. In the monotonically increasing process, the slope is positive, indicating that the deviation is getting larger, and in the monotonically decreasing process, the slope is negative, indicating that the deviation is getting smaller.

[0090] Therefore, a straight line fitting is performed on the analysis line to determine the slope of the fitted line. The sum of the corresponding slopes of the two analysis lines is normalized and used as the slope analysis value. The larger the slope analysis value, the greater the monotonic upward trend around the turning point, that is, the more obvious the upward trend of the overall deviation change.

[0091] To analyze the current moment, the sum of the slope analysis values ​​of all turning points is used as the offset change index. The product of the offset change index and the maximum position deviation at the sampling point is calculated and normalized to form the etching deviation complexity. In other words, a greater etching deviation complexity indicates a greater rate of deviation change during the current moment and a greater effect of the change.

[0092] S105: performing etching control based on the etching route deviation degree and the etching deviation complexity.

[0093] Furthermore, in some embodiments of the present invention, the degree of etching route offset and the complexity of etching deviation are used as two dimensions to construct an etching error vector, and the etching error vector at the current moment is input into a PLC controller to output control instructions, which are used to control the power and scanning speed during the laser etching process.

[0094] The real-time etching error vector is input into a PLC controller (known technology), which then outputs control instructions to optimize the power and scanning speed during the laser etching process to achieve the desired etching effect. Throughout the entire laser etching process, the PLC, acting as a powerful industrial controller, ensures the accuracy and repeatability of RFID antenna etching. Through real-time data acquisition and precise control output, the PLC makes the laser etching process highly automated and controllable, thereby improving production efficiency and product quality.

[0095] Of course, in other embodiments of the present invention, warning control can also be performed in combination with the degree of etching route deviation and the complexity of etching deviation. For example, the product value of the degree of etching route deviation and the complexity of etching deviation is directly calculated. When the product value is greater than the preset indicator, relevant personnel are reminded to perform etching control.

[0096] In an embodiment of the present invention, by analyzing the difference between the actual model and the design model at the current moment, the offset region where the offset occurs during the etching process is determined, and the actual etching route, the design etching route, and the offset etching route are determined based on the skeleton line. The acquisition of the offset region represents the offset characteristics of the two-dimensional plane. The skeleton line can perform skeleton analysis on the plane figure to obtain lines that only retain the morphological characteristics, which facilitates subsequent further offset analysis. First, the offset degree of the etching route of the actual model is determined based on the area ratio of the offset region to the design model, the length ratio of the offset etching route to the design etching route, and the skeleton line length of the largest connected domain in the offset region. The offset degree of the etching route represents the offset characteristics under the combined area dimension and the skeleton line analysis dimension, thereby accurately representing the overall offset from the initial moment to the current moment. Then, it is necessary to analyze the offset trend at the current moment. In this embodiment of the present invention, the offset complexity of the etching deviation is determined by the offset change of the nearest deviation path segment at the current moment and the maximum position deviation at the sampling point position, which can accurately represent the etching deviation at the current moment. Therefore, etching control is performed by combining the offset degree of the etching route and the complexity of the etching deviation. Compared with the traditional method of directly analyzing the differences between the current laser point and the corresponding point of the design model, the present invention can predict errors in advance and thus control them in advance, and optimize the control strategy according to the overall status and current trends to achieve better control effects.

[0097] The present invention also provides a laser etching control system for an RFID antenna. The system includes a memory, a processor, and a computer program stored in the memory and runnable on the processor. When the processor executes the computer program, the steps of the aforementioned laser etching control method for an RFID antenna are implemented.

[0098] It should be noted that the order in which the embodiments of the present invention are described above is for illustrative purposes only and does not necessarily represent the superiority or inferiority of the embodiments. The processes depicted in the accompanying drawings do not necessarily require the specific order or sequential order shown to achieve the desired results. In certain embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0099] The various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referred to each other. Each embodiment focuses on the differences from other embodiments.

Claims

1. A laser etching control method for RFID antenna, characterized in that: The method comprises: Obtain the actual model at the current moment and the design model at the corresponding moment during the laser etching process; According to the deviation between the actual model and the design model, the offset area where the offset occurs during the etching process is determined; the skeleton lines of the actual model, the design model and the offset area are determined to obtain the actual etching route, the designed etching route and the offset etching route; The offset degree of the etching route of the actual model is determined based on the area ratio of the offset region in the design model, the length ratio of the offset etching route in the design etching route, and the skeleton line length of the maximum connected domain in the offset region; The designed etching route is sampled periodically to obtain sampling points. The position deviation between the designed etching route and the actual etching route is analyzed at each sampling point along the designed etching route to identify the deviation path segment. The turning point of the deviation change of the nearest deviation path segment at the current moment is determined. The complexity of the etching deviation is determined based on the offset changes on both sides of the turning point and the maximum position deviation at the sampling point. Etching control is performed based on the degree of etching route deviation and the complexity of etching deviation.

2. The laser etching control method for RFID antenna according to claim 1, characterized in that: The step of determining the offset region where offset occurs during the etching process based on the deviation between the actual model and the design model includes: The intersection and union of the actual model and the design model at the current moment on the two-dimensional plane are determined, and the intersection is subtracted from the union to obtain the offset area generated during the etching process.

3. The laser etching control method for RFID antenna according to claim 1, characterized in that: The skeleton lines are determined by a morphological thinning operation.

4. The laser etching control method for RFID antenna according to claim 1, characterized in that: The step of determining the offset degree of the etching route of the actual model according to the area ratio of the offset region in the design model, the length ratio of the offset etching route in the design etching route, and the skeleton line length of the maximum connected domain of the offset region includes: Determine the offset index based on the area ratio of the offset region in the design model and the length ratio of the offset etching route in the design etching route; The product of the skeleton line length of the largest connected domain in the offset area and the offset index is calculated and normalized as the offset degree of the etching route.

5. The laser etching control method for RFID antenna according to claim 4, characterized in that: The offset index is determined by combining the area ratio of the offset region in the design model and the length ratio of the offset etching route in the design etching route, including: Calculate the ratio of the area of ​​the offset area to the area of ​​the design model as the area ratio indicator; Calculate the ratio of the length of the offset etching route to the length of the designed etching route as the length ratio indicator; The product value of the area ratio index and the length ratio index is normalized and used as the offset index.

6. The laser etching control method for RFID antenna according to claim 1, characterized in that: Analyzing the position deviation between the designed etching route and the actual etching route at each sampling point and identifying the deviation path segment includes: The starting point of the designed etching route is overlapped with the starting point of the actual etching route, and the point of the actual etching route closest to each sampling point is determined as the reference point; The Euclidean distance between the sampling point and the reference point is taken as the position deviation, and the actual etching route segment with a position deviation greater than the preset deviation distance is taken as the deviation path segment.

7. The laser etching control method for RFID antenna according to claim 1, characterized in that: The turning point is an extreme point of deviation change. Determining the turning point of the deviation change of the deviation path segment closest to the current moment includes: In the deviation path segment that is closest to each other at the current moment, a two-dimensional coordinate system is constructed with the path sequence as the horizontal coordinate and the position deviation as the vertical coordinate. The coordinate points of the position deviation between each sampling point and the reference point in the two-dimensional coordinate system are determined, and the coordinate points are connected to obtain the deviation change curve; The sampling point with a slope of 0 in the deviation change curve is taken as the turning point.

8. The laser etching control method for RFID antenna according to claim 7, characterized in that: Determining the complexity of the etching deviation based on the offset changes on both sides of the turning point and the maximum position deviation at the sampling point position includes: The curve between the other turning points closest to the turning point on both sides of the deviation change curve is used as the analysis line; Perform straight line fitting on the two analysis lines respectively, determine the slope of the fitted line, and normalize the sum of the corresponding slopes of the two analysis lines as the slope analysis value; The sum of the slope analysis values ​​of all turning points is used as the offset change indicator; The product of the offset change index and the maximum position deviation at the sampling point is calculated and normalized to obtain the etching deviation complexity.

9. The laser etching control method for RFID antenna according to claim 1, characterized in that: The etching control is performed by combining the etching route deviation degree and the etching deviation complexity, including: Taking the offset degree of etching route and the complexity of etching deviation as two dimensions, an etching error vector is constructed. The etching error vector at the current moment is input to the PLC controller, and a control instruction is output. The control instruction is used to control the power and scanning speed during the laser etching process.

10. A laser etching control system for an RFID antenna, the system comprising a memory, a processor, and a computer program stored in the memory and running on the processor, characterized in that: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 9 are implemented.

Images