Power amplifier and preparation method thereof, radio frequency power amplifier chip and electronic equipment

Abstract

The invention provides a power amplifier and a preparation method thereof, a radio frequency power amplifier chip and electronic equipment. The power amplifier comprises a grid electrode, an insulating substrate layer, a cathode and an anode, the grid electrode is provided with a groove, an opening of the groove is located in the top face of the grid electrode, the groove comprises a groove bottom wall face and two groove side wall faces, the two groove side wall faces are oppositely arranged in a spaced mode in the first direction, and the insulating substrate layer is arranged on the groove bottom wall face and covers the groove bottom wall face. The cathode and the anode are both arranged on the surface, back on to the groove bottom wall surface, of the insulating substrate layer and are both arranged at intervals with the two groove side wall surfaces, the cathode and the anode are oppositely arranged at intervals in the second direction, and the first direction is different from the second direction. According to the technical scheme, the nonlinearity and low distortion of the output waveform of the power amplifier can be ensured, so that the saturation characteristic of the output characteristic curve is obtained, and the power amplifier meets the application requirement.

Description

Power amplifier and preparation method thereof, radio frequency power amplifier chip and electronic equipment Technical Field

[0001] The present application relates to vacuum technology and semiconductor technology, and in particular to a power amplifier and a preparation method thereof, a radio frequency power amplifier chip and an electronic device. Background Art

[0002] Nanoscale air-channel transistors offer the advantages of field-emission electron devices, such as wide bandwidth, high efficiency, and fast response, while also being integrated with solid-state devices. This reduces device size and power consumption, revolutionizing vacuum electronics technology. However, existing power amplifiers suffer from significant nonlinearity and distortion in their output waveforms, making it difficult to achieve saturation characteristics in their output characteristic curves, rendering them incompatible with application requirements.

[0003] Summary of the Invention

[0004] The present application provides a power amplifier and a preparation method thereof, a radio frequency power amplifier chip and an electronic device, which can ensure that the nonlinearity and distortion of the output waveform of the power amplifier are small, thereby obtaining the saturation characteristics of the output characteristic curve, so that the power amplifier meets the application requirements.

[0005] In a first aspect, the present application provides a power amplifier, comprising a gate, an insulating base layer, a cathode, and an anode, wherein the gate is provided with a groove, the opening of the groove being located on the top surface of the gate, the groove comprising a groove bottom wall and two groove side walls, wherein the two groove side walls are spaced apart and arranged opposite to each other along a first direction, the insulating base layer is provided on the groove bottom wall and covers the groove bottom wall, the cathode and the anode are both provided on a surface of the insulating base layer facing away from the groove bottom wall and are spaced apart from the two groove side walls, and the cathode and the anode are spaced apart and arranged opposite to each other along a second direction, wherein the first direction is different from the second direction. The technical solution provided by the present application is conducive to achieving planarization of the power amplifier structure and can ensure that the nonlinearity and distortion of the output waveform of the power amplifier are small, thereby obtaining a saturation characteristic of the output characteristic curve, so that the power amplifier meets the application requirements.

[0006] In one possible embodiment, the surface of the cathode facing away from the insulating base layer and the surface of the anode facing away from the insulating base layer are both located between the top surface and the bottom surface of the gate. In this embodiment, the gate can wrap around the anode and cathode, which can enhance the shielding effect of the gate on the anode and reduce the influence of the anode on the electron emission of the cathode, thereby effectively improving the gate's control over the electrons emitted by the cathode.

[0007] In a possible implementation, the gate is in the shape of a planar plate. In this embodiment, by setting the gate in the shape of a planar plate, it is beneficial to achieve a planar structure of the power amplifier.

[0008] In one possible embodiment, the insulating base layer includes a first portion and a second portion, the first portion and the second portion being spaced apart and arranged opposite each other along the second direction; the cathode is disposed on a surface of the first portion facing away from the groove bottom wall, and the anode is disposed on a surface of the second portion facing away from the groove bottom wall. In this embodiment, by removing the portion of the insulating base layer corresponding to the cathode and anode, the likelihood of electrons hitting the insulating base layer is reduced, preventing charge accumulation on the insulating base layer, thereby improving electron utilization efficiency and enhancing the performance of the power amplifier.

[0009] In one possible embodiment, the cathode includes a first end surface, and the anode includes a second end surface, spaced apart from the first end surface along the second direction; the first portion includes a third end surface, flush with the first end surface; and the second portion includes a fourth end surface, spaced apart from the third end surface along the second direction, flush with the second end surface. In this embodiment, by aligning the first end surface of the cathode with the third end surface of the first portion, and aligning the second end surface of the anode with the fourth end surface of the second portion, the distance between electrons emitted from the cathode and the anode can be shortened, allowing more electrons to reach the anode to form current.

[0010] In one possible embodiment, the cathode further includes a first left side and a first right side, and along the first direction, the first right side and the first left side are disposed opposite each other; the anode further includes a second left side and a second right side, and along the first direction, the second right side and the second left side are disposed opposite each other; the first portion further includes a third left side and a third right side, and along the first direction, the third left side and the third right side are disposed opposite each other, the third left side is flush with the first left side, and the third right side is flush with the first right side; the second portion further includes a fourth left side and a fourth right side, and along the first direction, the fourth right side is disposed opposite each other, the fourth left side is flush with the second left side, and the fourth right side is flush with the second right side. In this embodiment, by removing the corresponding portions of the insulating base layer between the cathode and the gate, and between the anode and the gate, the possibility of electrons hitting the insulating base layer can be further reduced.

[0011] In one possible embodiment, the cathode includes a first left side and a first right side, and along the first direction, the first right side and the first left side are disposed opposite each other; the anode includes a second left side and a second right side, and along the first direction, the second right side and the second left side are disposed opposite each other; the insulating base layer includes a first side surface and a second side surface, and along the first direction, the first side surface and the second side surface are disposed opposite each other; along the first direction, the first side surface protrudes relative to the first left side and the second left side, and the second side surface protrudes relative to the first right side and the second right side. This arrangement facilitates the gate forming a wrapping state around the cathode and anode, thereby enhancing the gate's shielding effect on the anode, thereby reducing the influence of the anode on the cathode's electron emission.

[0012] In one possible embodiment, the cathode includes an emitting surface facing the anode, wherein the emitting surface is planar, or has a single-pointed pyramidal shape, or has a multi-pointed pyramidal shape, or has an arcuate surface. In this embodiment, by changing the shape of the emitting surface or configuring the emitting surface to have a pointed structure, the field enhancement factor of the emitting surface can be increased, thereby improving the cathode's electron emission capability at the same gate voltage, thereby increasing the power density of the power amplifier.

[0013] In one possible embodiment, the gate is provided with a plurality of grooves, which are spaced apart from each other along the first direction; the insulating base layer includes a plurality of base portions, which are spaced apart from each other along the first direction, each base portion being located on and covering the bottom wall of a groove; each cathode and one anode are located on a surface of a base portion facing away from the bottom wall of the groove, and are spaced apart along the second direction; and the power amplifier further includes a plurality of cathode conductor films and a plurality of anode conductor films, each cathode conductor film being located on a surface of the insulating base layer facing away from the bottom wall of the groove and connecting between two adjacent cathodes, and each anode conductor film being located on a surface of the insulating base layer facing away from the bottom wall of the groove and connecting between two adjacent anodes. This arrangement can not only increase the output power of the power amplifier, making it suitable for high-power electronic devices, but also solve the problem of requiring jumper wires to connect the sides of two adjacent gates.

[0014] In one possible embodiment, along the first direction, the distance between the anode and the two groove sidewalls, and the distance between the cathode and the two groove sidewalls, are both less than or equal to 1000 nm; along the second direction, the distance between the anode and the cathode is less than or equal to 1000 nm. In this embodiment, by ensuring that the distance between the anode and the two groove sidewalls, the distance between the cathode and the two groove sidewalls, and the distance between the anode and cathode are all less than or equal to 1000 nm, the structure in the power amplifier meets the characteristics of a nano-air channel.

[0015] In one possible embodiment, the cathode comprises a self-assembled material layer and a nanofilm layer, which are sequentially stacked on a surface of the insulating base layer facing away from the bottom wall of the groove, and the nanofilm layer comprises carbon nanotubes. In this embodiment, carbon nanotubes have a large aspect ratio and thin edges. Using carbon nanotubes to fabricate the cathode can enhance the field enhancement effect on the cathode surface, thereby improving the cathode's electron emission performance.

[0016] In one possible embodiment, the carbon nanotubes in the nanofilm layer are randomly oriented. In this embodiment, the carbon nanotubes undergo Brownian motion in the solution. Under the action of electrostatics, the carbon nanotubes are adsorbed onto the surface of the self-assembly material layer and positioned, thereby forming randomly oriented carbon nanotubes.

[0017] In one possible embodiment, the carbon nanotubes in the nanofilm layer are oriented in a direction, and the orientation of the carbon nanotubes in the nanofilm layer is parallel to the self-assembled material layer. In this embodiment, due to the thin edges and thickness of the nanofilm layer, as well as its lateral properties such as surface orientation, the carbon nanotubes can grow in parallel and in a direction, thereby enhancing the field enhancement effect on the cathode surface and improving the cathode's field emission performance, enabling the power amplifier to meet the requirements of high-power electronic devices.

[0018] In a second aspect, the present application further provides a radio frequency power amplifier chip, comprising a radio frequency circuit and a power amplifier as described in any of the above items, wherein the power amplifier is electrically connected to the radio frequency circuit. In this embodiment, the radio frequency power amplifier chip can amplify the power of radio frequency signals through the power amplifier and the radio frequency circuit.

[0019] In a third aspect, the present application further provides an electronic device comprising a housing and the aforementioned RF power amplifier chip, wherein the RF power amplifier chip is mounted in the housing. In this embodiment, the RF power amplifier chip can amplify the RF signal of the electronic device so that the RF signal obtains sufficient output power, thereby enabling communication between the electronic device and the outside world.

[0020] In a fourth aspect, the present application also provides a method for preparing a power amplifier, comprising: providing a gate, the gate having a groove, the groove including a groove bottom wall and two groove side walls, the two groove side walls being spaced apart and arranged opposite to each other along the first direction; forming an insulating base layer on the groove bottom wall, the insulating base layer covering the groove bottom wall; forming an anode and a cathode on a surface of the insulating base layer away from the groove bottom wall, the cathode and the anode being spaced apart from the two groove side walls, and the cathode and the anode being spaced apart and arranged opposite to each other along the second direction. The method for preparing a power amplifier provided in the present application is conducive to miniaturization and planarization of the power amplifier, and can also ensure that the nonlinearity and distortion of the output waveform of the power amplifier are small, thereby obtaining the saturation characteristics of the output characteristic curve, so that the power amplifier meets the application requirements.

[0021] In one possible embodiment, the process of forming the cathode on the surface of the insulating base layer facing away from the bottom wall of the groove includes: coating a photoresist layer on the surface of the insulating base layer facing away from the bottom wall of the groove; exposing the photoresist layer to expose the surface of the insulating base layer facing away from the bottom wall of the groove, forming a region where the cathode is to be formed; coating a self-assembly solution on the surface of the photoresist layer facing away from the insulating base layer and the region where the cathode is to be formed, forming a self-assembly layer; transferring a carbon nanotube dispersion to the surface of the self-assembly layer facing away from the insulating base layer, forming a nanomaterial layer; and removing the photoresist layer, a portion of the self-assembly layer located on the surface of the photoresist layer facing away from the insulating base layer, and a portion of the nanomaterial layer located on the surface of the photoresist layer facing away from the insulating base layer, forming a self-assembly material layer and a nanofilm layer, thereby obtaining the cathode. In this embodiment, on the one hand, because carbon nanotubes have advantages such as high electron mobility, good electrical conductivity, and the ability to generate a potential barrier change when in contact with other materials, a nanofilm layer can be formed on the insulating base layer through self-assembly technology, and the nanofilm layer and the self-assembly material layer are combined to form a cathode. On the other hand, because the nanofilm layer has thin edges and small thickness, and has side properties such as surface orientation, the carbon nanotubes can grow in parallel and in a directionally oriented manner, thereby enhancing the field enhancement effect on the cathode surface and improving the field emission performance of the cathode, so that the power amplifier can meet the needs of high-power electronic equipment.

[0022] In one possible embodiment, the power amplifier further includes a substrate, and the gate is disposed on a supporting surface of the substrate. The process of forming the gate on the supporting surface of the substrate includes: forming a main body on the supporting surface of the substrate; forming an insulating layer on the surface of the main body facing away from the substrate; removing two oppositely disposed ends of the insulating layer to expose the surface of the main body facing away from the substrate; forming two side portions on the surface of the main body facing away from the substrate; and removing the insulating layer to obtain the gate located on the supporting surface of the substrate, wherein the two side portions and the main body enclose the groove. The process of preparing the gate provided in this embodiment is not only conducive to achieving planarization of the power amplifier structure, but also allows the gate to wrap around the cathode and anode, enhancing the shielding effect of the gate on the anode, thereby reducing the influence of the anode on the cathode electron emission and effectively improving the gate's control effect on the cathode-emitted electrons. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the background technology, the drawings required for use in the embodiments of the present application or the background technology will be described below.

[0024] FIG1 is a schematic structural diagram of an electronic device provided in an embodiment of the present application;

[0025] FIG2 is a schematic structural diagram of a power amplifier in the electronic device shown in FIG1 in a first embodiment;

[0026] FIG3 is a schematic diagram of the structure of the gate of the power amplifier shown in FIG2 ;

[0027] 4 to 6 are schematic diagrams of planar structures of cathodes in some other embodiments;

[0028] FIG7 is a schematic structural diagram of a power amplifier in the electronic device shown in FIG1 in a second embodiment;

[0029] FIG8 is a schematic structural diagram of a power amplifier in the electronic device shown in FIG1 in a third embodiment;

[0030] FIG9 is a schematic diagram of the structure of the gate of the power amplifier shown in FIG8;

[0031] 10 is a schematic cross-sectional view of the power amplifier in the electronic device shown in FIG1 in a fourth embodiment;

[0032] 11 is a schematic cross-sectional view of the power amplifier in the electronic device shown in FIG1 in a fifth embodiment;

[0033] FIG12 is a schematic diagram of a process for forming a gate on a supporting surface of a substrate;

[0034] FIG13 is a schematic diagram of a process for forming a cathode on a surface of an insulating base layer away from a bottom wall of a groove. DETAILED DESCRIPTION

[0035] The embodiments of the present application are described below in conjunction with the drawings in the embodiments of the present application.

[0036] Please refer to FIG. 1 , which is a schematic structural diagram of an electronic device 1000 provided in an embodiment of the present application.

[0037] The electronic device 1000 can be a wireless communication sensing device such as a cellular base station, a wireless local area network (WLAN) device, a mobile phone, a tablet computer, a computer or a wearable device, or a device that requires a millimeter wave source such as a terahertz imaging system, a millimeter wave imaging system or an in-vehicle device.

[0038] The electronic device 1000 includes a housing 100, an antenna 200 and a radio frequency power amplifier chip 300. The antenna 200 and the radio frequency power amplifier chip 300 are both mounted on the housing 100. The antenna 200 is used to radiate radio frequency signals to the outside world or receive radio frequency signals from the outside world. The radio frequency power amplifier chip 300 is electrically connected to the antenna 200. The radio frequency power amplifier chip 300 includes a radio frequency circuit 310 and a power amplifier 320, and the power amplifier 320 is electrically connected between the radio frequency circuit 310 and the antenna 200. The power amplifier 320 can amplify the radio frequency signal transmitted by the radio frequency circuit 310 and transmit it to the antenna 200, and radiate the radio frequency signal to the outside world via the antenna 200. The power amplifier 320 can also amplify the radio frequency signal received by the antenna 200 and transmit it to the radio frequency circuit 310, thereby realizing communication between the electronic device 1000 and the outside world through the antenna 200 and the radio frequency power amplifier chip 300. Exemplarily, the power amplifier 320 can be a microwave power amplifier or a millimeter wave power amplifier.

[0039] Please refer to FIG. 2 and FIG. 3 . FIG. 2 is a schematic structural diagram of the power amplifier 320 in the electronic device 1000 shown in FIG. 1 in a first embodiment. FIG. 3 is a schematic structural diagram of the gate 11 in the power amplifier 320 shown in FIG. 2 .

[0040] The power amplifier 320 includes a substrate (not shown) and a nanometer air channel transistor 10, and the nanometer air channel transistor 10 is located on the supporting surface of the substrate. The supporting surface of the substrate is a smooth and flat surface. For example, the substrate can be made of a semiconductor material such as silicon, for example, the substrate can be a silicon wafer, or the substrate can be made of an insulating material such as quartz. For ease of description, the length direction of the nanometer air channel transistor 10 is defined as a first direction X, the width direction of the nanometer air channel transistor 10 is defined as a second direction Y, and the height direction of the nanometer air channel transistor 10 is defined as a third direction Z. The first direction X, the second direction Y and the third direction Z are perpendicular to each other.

[0041] In this embodiment, the nano-air channel transistor 10 is a planar nano-air channel transistor. The thickness of the nano-air channel transistor 10 is smaller than the length and width, which is conducive to achieving planarization of the power amplifier 320 structure. The nano-air channel transistor 10 includes a gate 11, an insulating base layer 12, a cathode 13, and an anode 14. The gate 11 is provided with a groove 113, the opening of which is located on the top surface of the gate 11 (not marked in the figure). The groove 113 is recessed in a direction from the top surface to the bottom surface (not marked in the figure) of the gate 11 (the negative direction of the third direction Z shown in the figure), and passes through the front end face (not marked in the figure) and the rear end face (not marked in the figure) of the gate 11. Exemplarily, the groove 113 is square. The groove 113 includes a groove bottom wall 114 and two groove side walls 119. Along the first direction X, the two groove side walls 119 are spaced apart and arranged opposite to each other. The groove bottom wall 114 is connected between the two groove side walls 119. Specifically, the two groove sidewall surfaces 119 include a left groove sidewall surface 115 and a right groove sidewall surface 116 .

[0042] It should be noted that the directional terms such as "left", "right", "front", "back", "top" and "bottom" involved in this application are described with reference to the directions shown in Figure 2, with the negative direction toward the first direction X being "left", the positive direction toward the first direction X being "right", the negative direction toward the second direction Y being "front", the positive direction toward the second direction Y being "back", the positive direction toward the third direction Z being "top", and the negative direction toward the third direction Z being "bottom". They do not indicate or imply that the referred device or element must have a specific direction, be constructed and operated in a specific direction, and therefore should not be understood as limiting this application, and similar descriptions hereinbelow should be understood in the same way.

[0043] In this embodiment, the gate 11 is in the shape of a flat plate. That is, the thickness of the gate 11 is much smaller than the length and width of the gate 11. The gate 11 includes a main body 111 and two side portions 112. The two side portions 112 are fixedly connected to the top surface of the main body 111 (not shown in the figure). Along the first direction X, the two side portions 112 are spaced apart and arranged opposite to each other. Each side portion 112 extends from the top surface of the main body 111 in a direction away from the bottom surface (the positive direction of the third direction Z shown in the figure). The main body 111 and the two side portions 112 are surrounded to form a groove 113.

[0044] The insulating base layer 12 is provided on the bottom wall surface 114 of the groove 113 and covers the bottom wall surface 114 of the groove 113. The top surface (not marked in the figure) of the insulating base layer 12 is located on the side of the top surface of the gate 11 facing the bottom surface. In other words, the thickness of the insulating base layer 12 is less than or equal to the thickness of the side portion 112. Exemplarily, the front end surface (not marked in the figure) of the insulating base layer 12 protrudes relative to the front end surface (not marked in the figure) of the gate 11, and the rear end surface (not marked in the figure) of the insulating base layer 12 protrudes relative to the rear end surface (not marked in the figure) of the gate 11. In addition, the insulating base layer 12 includes a first side surface 12a and a second side surface 12b, and the first side surface 12a and the second side surface 12b are both connected between the top surface (not marked in the figure) and the bottom surface (not marked in the figure) of the insulating base layer 12. Along the first direction X, the first side surface 12a and the second side surface 12b are arranged opposite to each other. The first side surface 12 a contacts the left side wall surface 115 of the groove 113 , and the second side surface 12 b contacts the right side wall surface 116 of the groove 113 .

[0045] Exemplarily, the insulating base layer 12 can be made of a high dielectric constant material such as silicon dioxide, aluminum oxide, hafnium oxide, or boron nitride to ensure that the insulating base layer 12 has good insulation properties while being relatively small in thickness. It is understood that when a high voltage is applied to the power amplifier 320, the good insulation properties of the insulating base layer 12 can reduce leakage current in the insulating base layer 12, thereby helping to improve the electrical performance of the power amplifier 320. It should be noted that a high dielectric constant material refers to a material having a dielectric constant equal to or greater than that of silicon dioxide. The dielectric constant of silicon dioxide is approximately 4.

[0046] The cathode 13 and the anode 14 are both arranged on the surface of the bottom wall 114 of the insulating base layer 12 facing away from the groove 113, and are both spaced apart from the two groove side walls 119 of the gate 11. That is, the cathode 13 and the anode 14 are both arranged on the top surface of the insulating base layer 12. Specifically, the distance between the anode 14 and the two groove side walls 119, and the distance between the cathode 13 and the two groove side walls 119 are both less than or equal to 1000 nm. Exemplarily, the cathode 13 and the anode 14 can be formed on the top surface of the insulating base layer 12 by a metal plating process. Along the second direction Y, the cathode 13 and the anode 14 are spaced apart and arranged relative to each other. Specifically, the distance between the anode 14 and the cathode 13 is less than or equal to 1000 nm. In addition, along the first direction X, the cathode 13 and the anode 14 are both spaced apart from the first side surface 12a and the second side surface 12b of the insulating base layer 12.

[0047] In this embodiment, the cathode 13 is made of a metal material with a low work function. It should be noted that low work function means that the work function is less than 5 eV. Exemplarily, the material of the cathode 13 can be gold. The cathode 13 includes a first left side 131, a first right side 132 and a first end face 133. Along the first direction X, the first left side 131 and the first right side 132 are arranged back to back. Among them, the first end face 133 is the end face of the cathode 13 close to the anode 14, and the first end face 133 is connected between the first left side 131 and the first right side 132.

[0048] Specifically, the first left side surface 131 is spaced apart from the first side surface 12a of the insulating base layer 12 and from the left trench sidewall 115 of the gate 11. The first right side surface 132 is spaced apart from the second side surface 12b of the insulating base layer 12 and from the right trench sidewall 116 of the gate 11. In this embodiment, the distance d1 between the first left side surface 131 and the left trench sidewall 115 of the gate 11 is less than or equal to 1000 nm. The distance d4 between the first right side surface 132 and the right trench sidewall 116 of the gate 11 is less than or equal to 1000 nm. Exemplarily, the distance d1 between the first left side surface 131 and the left trench sidewall 115 and the distance d4 between the first right side surface 132 and the right trench sidewall 116 are equal. In other embodiments, the distance d1 between the first left side surface 131 and the left trench sidewall 115 and the distance d4 between the first right side surface 132 and the right trench sidewall 116 may be unequal. In addition, along the first direction X, the first side surface 12 a of the insulating base layer 12 protrudes relative to the first left side surface 131 of the cathode 13 , and the second side surface 12 b of the insulating base layer 12 protrudes relative to the first right side surface 132 of the cathode 13 .

[0049] The anode 14 includes a second left side 142, a second right side 143, and a second end face 141. Along the first direction X, the second left side 142 and the second right side 143 are disposed opposite each other. The second end face 141 is the end face of the anode 14 that is closest to the cathode 13 and is connected between the second left side 142 and the second right side 143. Along the second direction Y, the second end face 141 is spaced apart from the first end face 133 of the cathode 13. A distance d3 between the second end face 141 and the first end face 133 of the cathode 13 is less than or equal to 1000 nm.

[0050] Specifically, the second left side surface 142 is spaced apart from the left trench sidewall 115 of the gate 11, and the second right side surface 143 is spaced apart from the right trench sidewall 116 of the gate 11. In this embodiment, the distance d2 between the second left side surface 142 and the left trench sidewall 115 of the gate 11 is less than or equal to 1000 nm; and the distance d5 between the second right side surface 143 and the right trench sidewall 116 of the gate 11 is less than or equal to 1000 nm. Exemplarily, the distance d2 between the second left side surface 142 and the left trench sidewall 115 and the distance d5 between the second right side surface 143 and the right trench sidewall 116 are equal. In other embodiments, the distance d2 between the second left side surface 142 and the left trench sidewall 115 and the distance d5 between the second right side surface 143 and the right trench sidewall 116 may also be unequal. Furthermore, along the first direction X, the first side surface 12 a of the insulating base layer 12 protrudes relative to the second left side surface 142 of the anode 14 , and the second side surface 12 b of the insulating base layer 12 protrudes relative to the second right side surface 143 of the anode 14 .

[0051] In this embodiment, the distance d1 between the first left side surface 131 and the left groove sidewall surface 115, the distance d4 between the first right side surface 132 and the right groove sidewall surface 116, the distance d2 between the second left side surface 142 and the left groove sidewall surface 115, the distance d5 between the second right side surface 143 and the right groove sidewall surface 116, and the distance d3 between the first end surface 133 and the second end surface 141 are determined by the packaging conditions of the power amplifier 320. The power amplifier 320 can be packaged under atmospheric pressure or under vacuum conditions. Specifically, when the power amplifier 320 is packaged under atmospheric pressure, the distance d1 between the first left side surface 131 and the left trench sidewall 115, the distance d4 between the first right side surface 132 and the right trench sidewall 116, the distance d2 between the second left side surface 142 and the left trench sidewall 115, the distance d5 between the second right side surface 143 and the right trench sidewall 116, and the distance d3 between the first end surface 133 and the second end surface 141 are all less than or equal to 100 nm. When the power amplifier 320 is packaged under vacuum conditions, the distance d1 between the first left side surface 131 and the left trench sidewall 115, the distance d4 between the first right side surface 132 and the right trench sidewall 116, the distance d2 between the second left side surface 142 and the left trench sidewall 115, the distance d5 between the second right side surface 143 and the right trench sidewall 116, and the distance d3 between the first end surface 133 and the second end surface 141 are all less than or equal to 1000 nm. It should be noted that when the power amplifier 320 is packaged under vacuum conditions, the distance d1 between the first left side surface 131 and the left groove side wall surface 115, the distance d4 between the first right side surface 132 and the right groove side wall surface 116, the distance d2 between the second left side surface 142 and the left groove side wall surface 115, the distance d5 between the second right side surface 143 and the right groove side wall surface 116, and the distance d3 between the first end surface 133 and the second end surface 141 can be proportionally enlarged according to the degree of vacuum.

[0052] Furthermore, the surface of the cathode 13 facing away from the insulating base layer 12 and the surface of the anode 14 facing away from the insulating base layer 12 are both located between the top surface and the bottom surface of the gate 11. In other words, the sum of the thicknesses of the cathode 13 and the insulating base layer 12, and the sum of the thicknesses of the anode 14 and the insulating base layer 12 are both smaller than the thickness of the side portion 112 of the gate 11.

[0053] Please refer to FIG. 2 and FIG. 4 to FIG. 6 . FIG. 4 to FIG. 6 are schematic planar structural diagrams of the cathode 13 in some other embodiments.

[0054] In this embodiment, the cathode 13 further includes an emission surface 133a facing the anode 14. In other words, the first end surface 133 may be the emission surface 133a. The emission surface 133a is planar. In other embodiments, as shown in FIG4 , the emission surface 133a is in the shape of a single pointed cone, or, as shown in FIG5 , the emission surface 133a is in the shape of a multi-pointed cone, or, as shown in FIG6 , the emission surface 133a is in the shape of an arcuate surface. It is understood that by changing the shape of the emission surface 133a of the cathode 13 or configuring the emission surface 133a to have a pointed structure, the field enhancement factor of the emission surface 133a of the cathode 13 can be increased, thereby improving the electron emission capability of the cathode 13 under the same gate 11 voltage, thereby increasing the power density of the power amplifier 320.

[0055] In this embodiment, electron emission from cathode 13 is primarily controlled by gate 11 of power amplifier 320, and is also affected by anode 14. In nano-air channel transistor 10, the electron emission mode of cathode 13 is field-induced electron emission. When a sufficiently large electric field is applied to the surface of cathode 13, the potential barrier width on the surface of cathode 13 decreases, and electrons can be released from cathode 13 through the quantum effect of barrier penetration. The movement of electrons within the nano-air channel is not affected by factors such as scattering. When the voltage applied to gate 11 is higher than the voltage at which field-emission electrons are generated at cathode 13, the gate 11 voltage determines the electrons generated at cathode 13. Under the combined action of the voltages applied to gate 11 and anode 14, electrons emitted from cathode 13 move toward anode 14. During this process, some electrons may be intercepted by gate 11. By adjusting the spatial position, electrode shape, and voltage setting of anode 14 and cathode 13, the number of electrons intercepted by gate 11 can be reduced, allowing more electrons to reach anode 14 to form a current. Among them, by optimizing the electron shape and voltage setting, the electric field direction on the surface of the cathode 13 can be made perpendicular to the surface of the cathode 13, or the electric field direction on the surface of the cathode 13 can be set at an acute angle to the first end face 133 of the cathode 13, forming a converging electric field, thereby reducing the emission of electrons, so as to reduce the number of electrons intercepted by the gate 11.

[0056] In this embodiment, by providing a planar plate-shaped gate 11 in the power amplifier 320, on the one hand, it is beneficial to achieve the planarization of the structure of the power amplifier 320; on the other hand, the gate 11 can wrap the cathode 13 and the anode 14, which can enhance the shielding effect of the gate 11 on the anode 14 and weaken the influence of the anode 14 on the electron emission of the cathode 13, thereby effectively improving the control effect of the gate 11 on the electron emission of the cathode 13, obtaining the saturation characteristics of the output characteristic curve, and ensuring the linearity of the power amplifier 320, so that the power amplifier 320 meets the application requirements.

[0057] Please refer to FIG. 7 , which is a schematic structural diagram of the power amplifier 320 in the electronic device 1000 shown in FIG. 1 in a second embodiment.

[0058] The power amplifier 320 shown in this embodiment differs from the power amplifier 320 shown in the first embodiment described above in that the insulating base layer 12 includes a first portion 121 and a second portion 122. The first portion 121 and the second portion 122 are both disposed on the bottom wall 114 of the groove 113 of the gate 11. Along the second direction Y, the first portion 121 and the second portion 122 are spaced apart and disposed opposite each other.

[0059] The first portion 121 includes a third left side 124, a third right side 127, and a third end face 123. Along the first direction X, the third left side 124 and the third right side 127 are disposed opposite to each other. The third end face 123 is connected between the third left side 124 and the third right side 127. The third end face 123 is accommodated in the groove 113 of the gate 11. The third left side 124 is spaced apart from the left groove sidewall 115 of the gate 11. The third right side 127 is spaced apart from the right groove sidewall 116 of the gate 11. Exemplarily, the front end face (not marked in the figure) of the first portion 121 protrudes relative to the front end face (not marked in the figure) of the gate 11.

[0060] The second portion 122 includes a fourth left side 126, a fourth right side 128, and a fourth end face 125. Along the first direction X, the fourth left side 126 and the fourth right side 128 are disposed opposite each other. The fourth end face 125 is connected between the fourth left side 126 and the fourth right side 128. The fourth end face 125 is received in the groove 113 of the gate 11, and along the second direction Y, the fourth end face 125 is spaced apart from the third end face 123. The fourth left side 126 is spaced apart from the left groove sidewall 115 of the gate 11. The fourth right side 128 is spaced apart from the right groove sidewall 116 of the gate 11. Exemplarily, the rear end face (not labeled) of the second portion 122 protrudes relative to the rear end face (not labeled) of the gate 11.

[0061] The cathode 13 is disposed on the surface of the first portion 121 facing away from the tank bottom wall 114. The third end surface 123 of the first portion 121 is flush with the first end surface 133 of the cathode 13. The third left side surface 124 of the first portion 121 is flush with the first left side surface 131 of the cathode 13, and the third right side surface 127 of the first portion 121 is flush with the first right side surface 132 of the cathode 13.

[0062] The anode 14 is disposed on the surface of the second portion 122 facing away from the tank bottom wall 114. The fourth end surface 125 of the second portion 122 is flush with the second end surface 141 of the anode 14; the fourth left side surface 126 of the second portion 122 is flush with the second left side surface 142 of the anode 14; and the fourth right side surface 128 of the second portion 122 is flush with the second right side surface 143 of the anode 14.

[0063] In other words, portions of the insulating base layer 12 corresponding to the portions between the cathode 13 and the gate 11, between the anode 14 and the gate 11, and between the cathode 13 and the anode 14 are removed, thereby forming a first portion 121 and a second portion 122. Exemplary methods for removing portions of the insulating base layer 12 corresponding to the portions between the cathode 13 and the gate 11, between the anode 14 and the gate 11, and between the cathode 13 and the anode 14 include photoresist exposure, wet etching, reactive ion etching, and the like.

[0064] It is understood that after electrons are emitted from the cathode 13, they are ballistically transported toward the gate 11 and the anode 14. By removing portions of the insulating base layer 12 corresponding to the portions between the cathode 13 and the gate 11, between the anode 14 and the gate 11, and between the cathode 13 and the anode 14, the possibility of electrons hitting the insulating base layer 12 can be reduced, thereby preventing charge accumulation on the insulating base layer 12, thereby improving the utilization efficiency of electrons and enhancing the performance of the power amplifier 320.

[0065] Please refer to FIG8 and FIG9 in combination. FIG8 is a structural diagram of the power amplifier 320 in the electronic device 1000 shown in FIG1 in the third embodiment. FIG9 is a structural diagram of the gate 11 in the power amplifier 320 shown in FIG8.

[0066] The power amplifier 320 shown in this embodiment differs from the power amplifier 320 shown in the first embodiment described above in that the gate 11 is provided with a plurality of grooves 113, which are spaced apart from each other along the first direction X. For example, the number of grooves 113 is three. In other embodiments, the number of grooves 113 may be one, two, four, or more.

[0067] In this embodiment, the gate 11 includes a main body 111 and a plurality of side portions 112. Along the first direction X, the plurality of side portions 112 are arranged at intervals and are all connected to the main body 111. The plurality of side portions 112 include two first side portions 117 and a plurality of second side portions 118. Among them, along the first direction X, the two first side portions 117 are respectively connected to the opposite ends of the main body 111. The plurality of second side portions 118 are all located between the two first side portions 117. Along the first direction X, the plurality of second side portions 118 are arranged at intervals. Exemplarily, the number of the second side portions 118 is two. In some other embodiments, the number of the second side portions 118 may also be one, three, or more than four.

[0068] The insulating base layer 12 is provided on the bottom wall surface 114 of the plurality of grooves 113 and covers the bottom wall surface 114 of the plurality of grooves 113. In this embodiment, the insulating base layer 12 includes a plurality of base portions 12c and a plurality of connecting portions 12d. Exemplarily, the plurality of base portions 12c and the plurality of connecting portions 12d can be integrally formed. Specifically, along the first direction X, the plurality of base portions 12c are spaced apart from each other. Each base portion 12c is provided on the bottom wall surface 114 of a groove 113 of the gate 11 and covers the bottom wall surface 114 of each groove 113 and contacts both the left groove side wall surface 115 and the right groove side wall surface 116 of the groove 113. Each connecting portion 12d is connected between two base portions 12c and contacts the front end surface (not marked in the figure) and the rear end surface (not marked in the figure) of each second side portion 118, and exposes the top surfaces (not marked in the figure) of the plurality of second side portions 118. That is, the insulating base layer 12 covers the circumferences of the plurality of second side portions 118 .

[0069] Furthermore, the power amplifier 320 includes multiple cathodes 13, multiple anodes 14, and multiple conductive films 15. The multiple cathodes 13 and the multiple anodes 14 are all disposed on the surface of the insulating base layer 12 that faces away from the bottom wall 114 of the groove 113. That is, the multiple cathodes 13 and the multiple anodes 14 are all disposed on the top surface of the insulating base layer 12. Along the first direction X, the multiple cathodes 13 are spaced apart from each other and from the gate 11, and the multiple anodes 14 are spaced apart from each other and from the gate 11. Each cathode 13 and each anode 14 are disposed on the surface of the base portion 12c that faces away from the bottom wall 114 of the groove 113, and are spaced apart along the second direction Y and from the side portion 112.

[0070] Multiple conductive films 15 are disposed on the surface of the insulating base layer 12 facing away from the groove bottom wall 114 of the groove 113. The multiple conductive films 15 include multiple cathode conductive films 151 and multiple anode conductive films 152. Each cathode conductive film 151 is disposed on the surface of the insulating base layer 12 facing away from the groove bottom wall 114 of the groove 113 and is connected between two adjacent cathodes 13 to achieve electrical connection between the multiple cathodes 13. Each anode conductive film 152 is disposed on the surface of the insulating base layer 12 facing away from the groove bottom wall 114 of the groove 113 and is connected between two adjacent anodes 14 to achieve electrical connection between the multiple anodes 14.

[0071] In other words, the power amplifier 320 shown in this embodiment can have multiple nano-air channel transistors 10, and the multiple nano-air channel transistors 10 can be connected in parallel. Two adjacent nano-air channel transistors 10 share a side portion 112 of the gate 11. This configuration can increase the output power of the power amplifier 320, making the power amplifier 320 suitable for high-power electronic devices. In addition, because the gate 11 is a planar plate-like structure, the problem of requiring jumper wires to connect the side portions 112 of two adjacent gates 11 when multiple nano-air channel transistors 10 are connected in parallel can be solved.

[0072] Please refer to FIG. 10 , which is a schematic cross-sectional view of the power amplifier 320 in the electronic device 1000 shown in FIG. 1 in a fourth embodiment.

[0073] The power amplifier 320 shown in this embodiment is different from the power amplifier 320 shown in the first embodiment described above in that the cathode 13 includes a self-assembly material layer 135 and a nano-thin film layer 134. The self-assembly material layer 135 is stacked on the surface of the bottom wall 114 of the insulating base layer 12 facing away from the groove 113. That is, the self-assembly material layer 135 is stacked on the top surface of the insulating base layer 12. The components of the self-assembly material layer 135 are organic molecules, which are composed of three parts: an active head group, a carbon chain, and an end group. "Spontaneous" chemical adsorption can occur between the active head group and the insulating base layer 12. The carbon chains are constrained to each other by van der Waals forces or covalent bonds to form a tightly arranged film layer. The end group is located on the surface of the self-assembly material layer 135. It should be noted that the end group refers to the functional group at the tail of the organic molecule. For example, the end group can be a functional group such as an amino group, a hydroxyl group, a carboxyl group, and a thiol group. It is understood that different functional groups can impart different chemical properties to the terminal groups, thereby imparting specific properties to the self-assembling material layer 135. Furthermore, by leveraging the chemical properties of the terminal groups, multiple self-assembling material layers 135 can be stacked one on top of the other and, using a film-forming agent, formed into a multilayer composite film. The film-forming agent used to form the multilayer composite film can be 3-aminopropyltriethoxysilane.

[0074] Nanofilm layer 134 is stacked on the surface of self-assembled material layer 135 facing away from insulating base layer 12. Specifically, nanofilm layer 134 is stacked on top of self-assembled material layer 135. Nanofilm layer 134 comprises a conductive nanomaterial such as carbon nanotubes, graphene, molybdenum disulfide, tungsten disulfide, or zinc oxide nanowires. Exemplarily, nanofilm layer 134 is made of carbon nanotubes. The carbon nanotubes in nanofilm layer 134 are randomly oriented.

[0075] It is understood that due to the advantages of carbon nanotubes, such as high electron mobility, excellent electrical conductivity, and the potential barrier changes caused by contact with other materials, a nanofilm layer 134 can be formed on the insulating base layer 12 through self-assembly technology, and the nanofilm layer 134 is combined with the self-assembly material layer 135 to form the cathode 13. In addition, carbon nanotubes have a large aspect ratio and thin edges. Using carbon nanotubes to form the cathode 13 can enhance the field enhancement effect on the surface of the cathode 13, thereby improving the electron emission performance of the cathode 13.

[0076] Please refer to FIG. 11 , which is a schematic cross-sectional view of the power amplifier 320 in the electronic device 1000 shown in FIG. 1 in a fifth embodiment.

[0077] The power amplifier 320 shown in this embodiment differs from the power amplifier 320 shown in the fourth embodiment described above in that the carbon nanotubes in the nano-film layer 134 are oriented in a direction, and the orientation of the carbon nanotubes in the nano-film layer 134 is parallel to the self-assembly material layer 135. It is understood that because the nano-film layer 134 has thin edges and a small thickness, and has side properties such as surface orientation, the carbon nanotubes can grow in parallel and in a direction, thereby enhancing the field enhancement effect on the surface of the cathode 13 and improving the field emission performance of the cathode 13, so that the power amplifier 320 can meet the requirements of high-power electronic devices.

[0078] The embodiment of the present application also provides a method for preparing a first power amplifier 320 , which is used to prepare the power amplifier 320 shown in the first embodiment above.

[0079] Step S1: Provide an intermediate component, wherein the intermediate component includes a substrate and a gate, wherein the gate is disposed on a supporting surface of the substrate. The gate has a groove. The groove includes a bottom wall and two side walls, wherein the two side walls are spaced apart and disposed opposite to each other along a first direction X.

[0080] Please refer to FIG. 12 , which is a schematic diagram of the process of forming the gate 11 on the supporting surface of the substrate 10 a .

[0081] In this embodiment, the gate 11 can be formed through the following steps S11 to S15 .

[0082] Step S11: forming the main body 111 of the gate 11 on the supporting surface (not shown) of the substrate 10a. Exemplarily, the main body 111 of the gate 11 is formed on the supporting surface of the substrate 10a by a metal plating process.

[0083] Step S12: forming an insulating layer 10b on the surface of the main body 111 facing away from the substrate 10a. For example, the insulating layer 10b may be made of silicon dioxide.

[0084] Step S13: removing two opposite ends of the insulating layer 10b to expose the surface of the main body 111 facing away from the substrate 10a. For example, the two opposite ends of the insulating layer 10b can be removed by photolithography and etching.

[0085] S14: forming two side portions 112 of the gate 11 on the surface of the main body 111 facing away from the substrate 10a. For example, the two side portions 112 of the gate 11 can be formed on the surface of the main body 111 facing away from the substrate 10a by a metal plating process.

[0086] Step S15 : removing the insulating layer 10 b , thereby obtaining the gate 11 located on the supporting surface of the substrate 10 a , wherein the two side portions 112 and the main portion 111 enclose a groove.

[0087] In step S2 , an insulating base layer is formed on the bottom wall surface of the groove of the gate 11 , and the insulating base layer covers the bottom wall surface.

[0088] In step S3, a cathode 13 and an anode 14 are formed on the surface of the insulating base layer 12 facing away from the bottom wall of the groove, thereby obtaining a power amplifier 320, as shown in FIG2 . The cathode 13 and the anode 14 are both spaced apart from the two sidewalls of the groove. Along the second direction Y, the cathode 13 and the anode 14 are spaced apart and opposite to each other. For example, the cathode 13 and the anode 14 can be formed on the surface of the insulating base layer 12 facing away from the bottom wall of the groove by a metal plating process.

[0089] This application also provides a second method for preparing a power amplifier 320, which is used to prepare the power amplifier 320 shown in the fifth embodiment. The method for preparing the power amplifier 320 shown in this embodiment differs from the method for preparing the power amplifier 320 described above in that: Step S3, a cathode 13 is formed on the top surface of the insulating base layer 12.

[0090] Please refer to FIG. 13 , which is a schematic diagram showing the process of forming the cathode 13 on the surface of the insulating base layer 12 away from the bottom wall of the groove.

[0091] In this embodiment, the cathode 13 can be manufactured by self-assembly technology. Specifically, the cathode 13 can be manufactured through steps S31 to S35.

[0092] Step S31: coating a photoresist layer 136 on the surface of the insulating base layer 12 away from the bottom wall of the groove. Exemplarily, the photoresist layer 136 is coated on the surface of the insulating base layer 12 away from the bottom wall of the groove by spin coating.

[0093] Step S32 : exposing the photoresist layer 136 to expose the surface of the insulating base layer 12 away from the bottom wall of the groove to form a region where the cathode 13 is to be fabricated.

[0094] Step S33: A self-assembly solution is applied to the surface of the photoresist layer 136 facing away from the insulating base layer 12 and the area where the cathode 13 is to be formed, to form a self-assembly layer 135a. Exemplarily, the self-assembly solution is spin-coated onto the surface of the photoresist layer 136 facing away from the insulating base layer 12 and the area where the cathode 13 is to be formed.

[0095] Among them, the components of the self-assembled layer 135a are organic molecules, which are composed of three parts: an active head group, a carbon chain, and an end group. "Spontaneous" chemical adsorption can occur between the active head group and the insulating base layer 12. The carbon chains are constrained to each other by van der Waals forces or covalent bonds to form a tightly arranged film layer. The end group is located on the surface of the self-assembled layer 135a. It should be noted that the end group refers to the functionalized group at the tail of the organic molecule. Exemplary, the end group can be a functional group such as an amino group, a hydroxyl group, a carboxyl group, and a thiol group. It is understood that different functional groups can give the end group different chemical properties, thereby giving the self-assembled layer 135a specific properties. In addition, by relying on the chemical properties of the end group, multiple self-assembled layers 135a can be stacked layer by layer, and a multilayer composite film can be formed by a film-forming agent. Among them, the film-forming agent used to form the multilayer composite film can be 3-aminopropyl-triethoxysilane.

[0096] Step S34: Transferring the carbon nanotube dispersion to the surface of the self-assembled layer 135a facing away from the insulating base layer 12 to form a nanomaterial layer 134a. The carbon nanotubes in the nanomaterial layer 134a may be randomly or oriented. For example, the dispersant for the carbon nanotube dispersion may be polyvinyl pyrrolidone K30.

[0097] It should be noted that, in this embodiment, since the amino functional groups of the self-assembled layer 135a are positively charged, the carbon nanotubes are negatively charged after being acted upon by the dispersant. It is understood that when the insulating base layer 12 modified with the self-assembled layer 135a is placed in the carbon nanotube dispersion, the carbon nanotubes will perform Brownian motion in the solution, and under the action of electrostatics, the carbon nanotubes are adsorbed onto the surface of the self-assembled layer 135a and positioned, thereby forming a randomly oriented nanomaterial layer 134a. By adjusting the components of the self-assembled layer 135a and the components of the carbon nanotube dispersion, and using a vertical pulling method to modify the nanomaterial layer 134a on the surface of the self-assembled layer 135a, the carbon nanotubes in the nanomaterial layer 134a can be made to grow in parallel, thereby forming a directionally oriented nanomaterial layer 134a.

[0098] Step S35: Remove the photoresist layer 136, the portion of the self-assembled layer 135a located on the surface of the photoresist layer 136 away from the insulating base layer 12, and the portion of the nanomaterial layer 134a located on the surface of the photoresist layer 136 away from the insulating base layer 12 to form a patterned self-assembled material layer 135 and a nanofilm layer 134 to obtain the cathode 13.

[0099] The above are only some of the embodiments and implementations of this application. The scope of protection of this application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. A power amplifier, It is characterized in that It includes a gate, an insulating base layer, a cathode and an anode, the gate is provided with a groove, the opening of the groove is located on the top surface of the gate, the groove includes a groove bottom wall and two groove side walls, along a first direction, the two groove side walls are spaced apart and arranged opposite to each other, the insulating base layer is arranged on the groove bottom wall and covers the groove bottom wall, the cathode and the anode are both arranged on the surface of the insulating base layer facing away from the groove bottom wall, and are both spaced apart from the two groove side walls, along a second direction, the cathode and the anode are spaced apart and arranged opposite to each other, wherein the first direction is different from the second direction.

2. The power amplifier according to claim 1, It is characterized in that A surface of the cathode facing away from the insulating base layer and a surface of the anode facing away from the insulating base layer are both located between a top surface of the gate and a bottom surface of the gate.

3. The power amplifier according to claim 1 or 2, It is characterized in that The grid is in the shape of a planar plate.

4. The power amplifier according to any one of claims 1 to 3, It is characterized in that The insulating base layer comprises a first portion and a second portion, and along the second direction, the first portion and the second portion are spaced apart and arranged opposite to each other; The cathode is arranged on a surface of the first portion away from the groove bottom wall surface, and the anode is arranged on a surface of the second portion away from the groove bottom wall surface.

5. The power amplifier according to claim 4, It is characterized in that The cathode includes a first end surface, the anode includes a second end surface, and along the second direction, the second end surface is spaced apart from the first end surface; The first portion includes a third end surface, the third end surface being flush with the first end surface; The second portion includes a fourth end surface. Along the second direction, the fourth end surface is spaced apart from the third end surface, and the fourth end surface is flush with the second end surface.

6. The power amplifier according to claim 5, It is characterized in that The cathode further includes a first left side and a first right side, and along the first direction, the first right side and the first left side are arranged opposite to each other, and the anode further includes a second left side and a second right side, and along the first direction, the second right side and the second left side are arranged opposite to each other; The first part further includes a third left side and a third right side. Along the first direction, the third left side and the third right side are arranged opposite to each other, the third left side is flush with the first left side, and the third right side is flush with the first right side. The second part also includes a fourth left side and a fourth right side. Along the first direction, the fourth right side is arranged opposite to the fourth left side, the fourth left side is flush with the second left side, and the fourth right side is flush with the second right side.

7. The power amplifier according to any one of claims 1 to 3, It is characterized in that The cathode includes a first left side and a first right side, and along the first direction, the first right side and the first left side are arranged opposite to each other, and the anode includes a second left side and a second right side, and along the first direction, the second right side and the second left side are arranged opposite to each other; The insulating base layer includes a first side surface and a second side surface. Along the first direction, the second side surface and the first side surface are arranged opposite to each other. Along the first direction, the first side surface protrudes relative to the first left side surface and the second left side surface, and the second side surface protrudes relative to the first right side surface and the second right side surface.

8. The power amplifier according to any one of claims 1 to 7, It is characterized in that The cathode includes an emitting surface facing the anode, and the emitting surface is in a plane shape, or in a single-pointed cone shape, or in a multi-pointed cone shape, or in an arcuate surface shape.

9. The power amplifier according to any one of claims 1 to 8, It is characterized in that The gate is provided with a plurality of the grooves, and along the first direction, the plurality of the grooves are arranged at intervals from each other; The insulating base layer includes a plurality of base portions, which are spaced apart from each other along the first direction, and each of the base portions is disposed on a groove bottom wall surface of one of the grooves and covers the groove bottom wall surface of each of the grooves; Each of the cathodes and the anode is disposed on a surface of the base portion away from the groove bottom wall surface of the groove, and is spaced apart along the second direction; The power amplifier also includes a plurality of cathode conductor films and a plurality of anode conductor films, each of the cathode conductor films is arranged on the surface of the insulating base layer away from the bottom wall of the groove, and is connected between two adjacent cathodes, and each of the anode conductor films is arranged on the surface of the insulating base layer away from the bottom wall of the groove, and is connected between two adjacent anodes.

10. The power amplifier according to any one of claims 1 to 3, It is characterized in that Along the first direction, the distance between the anode and the two side walls of the groove, and the distance between the cathode and the two side walls of the groove are both less than or equal to 1000 nm; Along the second direction, a distance between the anode and the cathode is less than or equal to 1000 nm.

11. The power amplifier according to claim 1, It is characterized in that The cathode comprises a self-assembly material layer and a nano film layer, which are sequentially stacked on a surface of the insulating base layer facing away from the bottom wall of the groove, and the nano film layer comprises carbon nanotubes.

12. The power amplifier according to claim 11, It is characterized in that The orientations of the carbon nanotubes in the nano-film layer are random.

13. The power amplifier according to claim 12, It is characterized in that The carbon nanotubes in the nano film layer are oriented, and the orientation of the carbon nanotubes in the nano film layer is parallel to the self-assembly material layer.

14. A radio frequency power amplifier chip, It is characterized in that It comprises a radio frequency circuit and a power amplifier as described in any one of claims 1 to 13, wherein the power amplifier is electrically connected to the radio frequency circuit.

15. An electronic device, It is characterized in that It comprises a shell and the radio frequency power amplifier chip as claimed in claim 14, and the radio frequency power amplifier chip is installed in the shell.

16. A method for preparing a power amplifier, It is characterized in that include: A gate is provided, wherein the gate is provided with a groove, wherein the groove comprises a groove bottom wall surface and two groove side wall surfaces, and along a first direction, the two groove side wall surfaces are spaced apart and arranged opposite to each other; forming an insulating base layer on the groove bottom wall surface of the groove, wherein the insulating base layer covers the groove bottom wall surface; An anode and a cathode are formed on the surface of the insulating base layer away from the groove bottom wall. The cathode and the anode are both spaced apart from the two groove side walls. Along the second direction, the cathode and the anode are spaced apart and arranged opposite to each other.

17. The method for preparing the power amplifier according to claim 16, It is characterized in that The process of forming the cathode on the surface of the insulating base layer away from the groove bottom wall surface comprises: Coating a photoresist layer on the surface of the insulating base layer away from the groove bottom wall surface; Exposing the photoresist layer to expose the surface of the insulating base layer away from the groove bottom wall to form a region where the cathode is to be fabricated; Applying a self-assembly solution on the surface of the photoresist layer away from the insulating base layer and the area where the cathode is to be made to form a self-assembly layer; Transferring the carbon nanotube dispersion to the surface of the self-assembled layer away from the insulating base layer to form a nanomaterial layer; The photoresist layer, the portion of the self-assembled layer located on the surface of the photoresist layer away from the insulating base layer, and the portion of the nanomaterial layer located on the surface of the photoresist layer away from the insulating base layer are removed to form a self-assembled material layer and a nanofilm layer to obtain the cathode.

18. The method for preparing the power amplifier according to claim 16, It is characterized in that The power amplifier further includes a substrate, the gate is provided on a bearing surface of the substrate, and the process of forming the gate on the bearing surface of the substrate includes: forming a main body on the supporting surface of the substrate; forming an insulating layer on a surface of the main body away from the substrate; Removing two oppositely disposed ends of the insulating layer to expose a surface of the main body facing away from the substrate; forming two side portions on a surface of the main body away from the substrate; The insulating layer is removed to obtain the gate located on the supporting surface of the substrate, and the two side portions and the main body portion enclose the groove.

Images