A method and device for controlling irregular-shaped scribing of a galvanometer for a perovskite thin-film battery

Abstract

The present invention relates to a galvanometer special-shaped scribing control method and device for perovskite thin-film batteries, and belongs to the field of laser scribing technology. In view of the problems of response lag, limited stroke, splicing error, etc. in traditional special-shaped scribing, the present method realizes complex special-shaped path scribing through the coordinated control of a carrier platform and a galvanometer: a graphic containing a straight path and a special-shaped path is obtained, and the carrier platform is controlled to translate uniformly along the x-axis to complete the straight-line scribing; the expected scribing speed V_s of the special-shaped path is obtained in real time according to the trigger condition, and the carrier platform y-axis lateral movement and galvanometer fine-tuning instructions are analyzed and generated and executed synchronously; after completion, the straight-line scribing is resumed. The device includes path analysis, platform control, triggering, instruction generation and end modules. The method realizes the seamless connection between the special-shaped path and the straight segment, and the scribing accuracy, efficiency and yield are significantly improved, meeting the high-consistency scribing requirements of perovskite thin-film batteries.

Description

Technical Field

[0001] The present invention relates to a method and device for controlling irregular-shaped scribing of a galvanometer of a perovskite thin-film battery, and belongs to the technical field of laser scribing of perovskite thin-film batteries. Background Art

[0002] In the production process of perovskite thin-film batteries, laser scribing is a key process in the process. The three scribing lines P1, P2, and P3 are used to divide the entire thin-film layer into sub-battery modules connected in series.

[0003] The P1, P2, and P3 lines drawn by the traditional scribing process are straight lines. However, the latest process requirements have led to the need for special-shaped scribing. For example, some P1 straight lines can be changed into various local, raised lines such as arcs, triangles, and trapezoids. Special-shaped scribing can increase the effective illumination area and improve the conversion efficiency of perovskite thin-film batteries.

[0004] The current perovskite thin-film battery scribing process has two basic requirements: the first is high-speed scribing, and the second is multi-line synchronous scribing. The purpose is to reduce the product cost of perovskite thin-film batteries by improving scribing efficiency. Based on the above two requirements, the traditional P1, P2, and P3 straight line scribing processes have higher and more difficult-to-solve technical problems.

[0005] The existing technology for the implementation of irregular path marking is still in a blank state, and several possible implementation schemes are also in the theoretical demonstration stage. For example, irregular marking can be achieved by directly controlling the lateral movement in the y-axis direction on the carrier platform. However, this scheme is difficult to implement under the existing high-speed marking requirements of ultra-large area perovskite thin-film batteries. Because the size of the perovskite thin-film battery is in the range of 2.4m×1.2m, and the lateral movement size of the carrier platform in the y-axis direction is in the range of 500um, controlling the carrier platform to perform small-scale lateral movement during high-speed operation, the broadband delay response based on the control will cause serious deviation in the marking results.

[0006] In another feasible solution, the irregular-shaped marking is achieved by fine-tuning the galvanometer lens. However, the fine-tuning range of the galvanometer lens is limited, resulting in the size of the irregular-shaped marking exceeding the fine-tuning range. Currently, the irregular-shaped marking can also be divided into grids, and laser-scribed after fine-tuning the galvanometer lens in each partition, and then the laser-scribed parts of adjacent grids are spliced. This method will make the overall control method very complicated and continue to bring high difficulty in controlling the splicing accuracy, making this implementation solution too difficult to implement.

[0007] Therefore, high-speed, large-size, irregularly shaped scribing of perovskite thin-film batteries is currently a hot issue with no solution in the industry. The accuracy is difficult to control through the movement of the XY platform, and the size is limited by the control of the galvanometer lens and cannot cover the movement range of the irregular line. Grid splicing is also limited by the lack of splicing accuracy and cannot be achieved. Summary of the Invention

[0008] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a method and device for controlling irregular-shaped scribing of a galvanometer for a perovskite thin-film battery.

[0009] According to an embodiment of the present invention, a first solution is provided: a method for controlling irregular scribing of a galvanometer of a perovskite thin film battery, comprising the following steps:

[0010] Obtain a profiled path pattern of a scribed line of a thin film layer of a perovskite thin film battery, wherein the profiled path pattern includes a straight path and at least one profiled path, wherein the direction of the straight path is marked as the x-axis direction, the direction of the thin film layer perpendicular to the x-axis direction is the y-axis direction, and the direction perpendicular to the thin film layer is the z-axis direction;

[0011] Controlling the perovskite thin film battery to translate along the x-axis at a base speed V_0 via a carrying platform so as to be laser scribed in a straight line path by a focused laser of a laser focusing scribing head;

[0012] Obtaining a scratching trigger condition for the shaped path according to the shaped path graph, and when the scratching trigger condition is triggered, obtaining in real time an expected scratching speed V_s of the laser focused scratching head at a focused scratching point on the shaped path, where the focused scratching point is the focus of the focused laser on the thin film layer;

[0013] Analyzing the absolute value and direction of the expected scribing speed V_s to obtain the Y-axis lateral movement control instruction of the carrier platform and the galvanometer fine-tuning control instruction of the laser focusing scribing head, and synchronously executing the Y-axis lateral movement control instruction of the carrier platform and the galvanometer fine-tuning control instruction to perform laser scribing of the special-shaped path;

[0014] When the triggering condition for scribing the irregular path is terminated, the laser focusing scribing head resumes laser scribing of the straight path or terminates laser scribing.

[0015] Furthermore, the special-shaped path includes a triangular path, a trapezoidal path, and an arc path whose starting point and end point are connected to a straight path.

[0016] Furthermore, the triggering conditions for marking the special-shaped path include:

[0017] Calculate the marking distance of the focused laser of the focused laser marking head along the straight path according to the special-shaped path graph and pre-calculate the trigger time and end time of the special-shaped path;

[0018] Alternatively, the scratching trajectory of the focused laser of the laser focused scratching head on the thin film layer of the perovskite thin film battery is obtained according to the special-shaped path graphic, the position of the focused scratching point on the scratching trajectory is detected in real time, and the scratching trigger condition is triggered when the focused scratching point reaches the starting point of the special-shaped path, and the scratching trigger condition is ended when the focused scratching point reaches the end point of the special-shaped path.

[0019] Furthermore, the expected scoring speed V_s of the focused scoring point on the profiled path of the laser focused scoring head includes an absolute value of the profiled scoring speed and a direction of the profiled scoring speed. The absolute value of the profiled scoring speed is the absolute value of the real-time speed of the focused laser scoring along the profiled path, and the direction of the profiled scoring speed is the path direction of the focused laser scoring along the straight profiled path, or the tangent direction of the focused laser scoring along the curved profiled path.

[0020] Furthermore, the absolute value of the special-shaped engraving speed is equal to the basic speed V_0 of the carrying platform.

[0021] Furthermore, the step of obtaining the Y-axis lateral movement control instruction of the carrier platform and the galvanometer fine-tuning control instruction of the laser focusing scribing head includes:

[0022] The velocity component of the expected scribing velocity V_s in the y-axis direction is the lateral movement velocity of the carrying platform along the y-axis direction, and a y-axis lateral movement control instruction of the carrying platform is generated according to the lateral movement velocity of the carrying platform along the y-axis direction;

[0023] The speed component of the expected scratching speed V_s in the x-axis direction is the composite speed of the basic speed V_0 of the carrying platform and the fine-tuning displacement speed of the galvanometer of the laser focusing scratching head. The fine-tuning displacement speed of the galvanometer is calculated based on the expected scratching speed V_s and the basic speed V_0 of the carrying platform, and the galvanometer fine-tuning control instruction is generated based on the fine-tuning displacement speed of the galvanometer.

[0024] Furthermore, the step of obtaining the Y-axis lateral movement control instruction of the carrier platform and the galvanometer fine-tuning control instruction of the laser focusing scribing head includes:

[0025] The speed component of the expected engraving speed V_s in the y-axis direction is the composite speed of the lateral movement speed of the carrying platform along the y-axis direction and the y-axis component speed of the galvanometer fine-tuning displacement speed in the y-axis direction. The y-axis lateral movement control instruction of the carrying platform and the galvanometer fine-tuning control instruction 1 are obtained according to the speed component of the expected engraving speed V_s in the y-axis direction.

[0026] The speed component of the expected scribing speed V_s in the x-axis direction is the composite speed of the base speed V_0 of the carrying platform along the x-axis direction and the x-axis component speed of the galvanometer fine-tuning displacement speed in the x-axis direction. The x-axis component speed of the galvanometer fine-tuning displacement speed is calculated based on the speed component of the expected scribing speed V_s in the x-axis direction and the base speed V_0 of the carrying platform. The second galvanometer fine-tuning control instruction is generated based on the x-axis component speed of the displacement fine-tuning speed.

[0027] A galvanometer fine-tuning control instruction is generated according to the galvanometer fine-tuning control instruction one and the galvanometer fine-tuning control instruction two.

[0028] Furthermore, the step of obtaining the y-axis lateral movement control instruction of the carrying platform and the galvanometer fine-tuning control instruction 1 according to the speed component of the expected scratching speed V_s in the y-axis direction includes:

[0029] Perform frequency separation on the velocity component V_sy of the expected scratching velocity V_s in the y-axis direction and obtain a low-frequency component V_sylow and a high-frequency component V_syhigh, wherein the frequency range of the low-frequency component matches the response bandwidth of the carrier platform, and the frequency range of the high-frequency component matches the response bandwidth of the galvanometer;

[0030] Using the low-frequency component as the lateral movement speed of the carrier platform along the y-axis direction, calculating the output current or voltage signal of the motion controller of the carrier platform according to the lateral movement speed of the carrier platform along the y-axis direction, and using the output current or voltage signal as the lateral movement control instruction of the carrier platform;

[0031] The high-frequency component is used as the angular velocity control instruction of the galvanometer, and the target angular velocity of the galvanometer is calculated based on the deflection angle of the galvanometer reflector and the spot of the focused laser. The target angular velocity is converted into a current signal through the galvanometer driver and a galvanometer fine-tuning control instruction is generated.

[0032] Furthermore, the step of synchronously executing the Y-axis lateral movement control instruction of the carrier platform and the galvanometer fine-tuning control instruction to perform laser scribing of the special-shaped path includes:

[0033] The system control chip is provided with a high-precision synchronous clock module, which is connected to the carrier platform controller and the galvanometer controller and unifies the time reference;

[0034] When generating the Y-axis lateral movement control instructions and the galvanometer fine-tuning control instructions of the carrier platform, a timestamp is added to each instruction based on a unified high-precision synchronous clock module. The timestamp includes the target execution start time t_0 of the instruction.

[0035] After receiving the control instructions bound to the timestamp, the platform controller and the galvanometer controller respectively detect the current time in real time based on the high-precision synchronous clock module. When the current time reaches t_0, the Y-axis lateral movement control instruction and the galvanometer fine-tuning control instruction are synchronously triggered.

[0036] The position encoder signal of the carrier platform and the angular velocity sensor signal of the galvanometer are collected synchronously at a fixed period through the synchronous communication CAN bus, and the collection time is strictly aligned with the high-precision synchronous clock module;

[0037] Calculate the actual delay Δt_1 of the platform executing the instruction and the actual delay Δt_2 of the galvanometer executing the instruction. If |Δt_1 - Δt_2| > the preset threshold, when generating the control instruction for the subsequent laser scribing of the special-shaped path, adjust the timestamp to t_0' = t_0 - max(Δt_1, Δt_2) to make the actual start time of the two actions consistent.

[0038] According to an embodiment of the present invention, using the galvanometer irregular-shaped scribing control method for perovskite thin-film batteries in the first embodiment provided by the present invention, a second embodiment is provided:

[0039] A galvanometer irregular-shaped scribing control device for a perovskite thin-film battery, comprising:

[0040] A path parsing module is used to obtain a profiled path graph of the ruled line of the thin film layer of the perovskite thin film battery, wherein the profiled path graph includes a straight path and at least one profiled path, wherein the direction of the straight path is marked as the x-axis direction, the direction of the thin film layer perpendicular to the x-axis direction is the y-axis direction, and the direction perpendicular to the thin film layer is the z-axis direction;

[0041] The platform x-axis control module is used to obtain the perovskite thin film battery by translating along the x-axis direction at a basic speed V_0 through the carrying platform so as to be laser-scribed in a straight path by the focused laser of the laser focusing scribing head;

[0042] A special-shaped trigger module is used to obtain a scratching trigger condition for the special-shaped path according to the special-shaped path graph. When the scratching trigger condition is triggered, the expected scratching speed V_s of the laser focused scratching head at the focused scratching point on the special-shaped path is obtained in real time. The focused scratching point is the focus of the focused laser on the thin film layer.

[0043] A special-shaped path control instruction module is used to parse the absolute value and direction of the expected scribing speed V_s to obtain the y-axis traverse control instruction of the carrier platform and the galvanometer fine-tuning control instruction of the laser focusing scribing head, and synchronously execute the y-axis traverse control instruction of the carrier platform and the galvanometer fine-tuning control instruction to perform laser scribing of the special-shaped path;

[0044] The special-shaped path ending module is used to enable the laser focusing scribing head to resume laser scribing of a straight path or end laser scribing when the scribing trigger condition for the special-shaped path is ended.

[0045] Compared with the existing technology, the technical solution provided by this application has the following unique beneficial effects:

[0046] By defining the special-shaped path graphics and coordinate axis benchmarks, the spatial relationship of the engraving path is clarified, ensuring that the starting and end points of the special-shaped path are accurately connected to the straight path, avoiding engraving breakpoints or overlaps, and improving the graphic integrity of the battery thin film layer; the straight path engraving is completed by using a carrier platform that moves at a uniform speed along the x-axis in conjunction with laser engraving. The large stroke and low vibration characteristics of the carrier platform are used to ensure the speed uniformity and laser energy density consistency of the straight segment engraving, avoiding uneven engraving depth or film damage caused by speed fluctuations; by obtaining the trigger conditions of the special-shaped path and the expected engraving speed V_s in real time, special-shaped engraving is achieved Precise start and end control; combined with the absolute value and direction analysis of V_s, dynamically generate coordinated instructions for the y-axis lateral movement of the carrier platform and the fine-tuning of the galvanometer, ensuring that the engraving speed strictly matches the geometric characteristics of the special-shaped path, avoiding engraving offset or graphic distortion caused by speed mismatch; through the synchronous control of the carrier platform and the galvanometer, the limitations of a single actuator are compensated, and the micron-level engraving accuracy of complex special-shaped paths is achieved, meeting the requirements of perovskite thin-film batteries for high consistency of engraved graphics; after the special-shaped path engraving is completed, the straight line engraving mode can be quickly restored to avoid shutdown or empty stroke caused by mode switching, thereby improving the overall engraving efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0048] in:

[0049] Figure 1 Flowchart of a method for controlling irregular-shaped scribing of a perovskite thin-film battery by a galvanometer according to one embodiment;

[0050] Figure 2 1. A structural block diagram of a galvanometer irregular-shaped scribing control device for a perovskite thin-film battery according to an embodiment;

[0051] Figure 3 FIG. 1 is a structural block diagram of a computer device in one embodiment. DETAILED DESCRIPTION

[0052] In order to enable those skilled in the art to better understand the technical solutions in this application, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the described embodiments are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making any creative efforts shall fall within the scope of protection of this application.

[0053] Example 1

[0054] The technical problem solved by this embodiment is that the implementation of irregular path scoring in the existing technology is still blank, and several possible implementation schemes are also in the theoretical demonstration stage. For example, irregular scoring can be achieved by directly controlling the lateral movement in the y-axis direction on the carrier platform. However, this scheme is difficult to implement under the existing high-speed scoring requirements of ultra-large area perovskite thin-film batteries, because the size of the perovskite thin-film battery is in the range of 2.4m×1.2m, while the lateral movement size of the carrier platform in the y-axis direction is in the range of 500um. Controlling the carrier platform to perform small-scale lateral movement during high-speed operation and the broadband delay response based on the control will cause serious deviation in the scoring results. In another feasible solution, the shaped marking is achieved by fine-tuning the galvanometer lens, but the fine-tuning range of the galvanometer lens is limited, resulting in the size of the shaped marking exceeding the fine-tuning range. Currently, the shaped marking can also be divided into grids, and laser marking is performed in each partition after the galvanometer lens is fine-tuned. The laser markings of adjacent grids are then spliced ​​together. This method will make the overall control method very complex and continue to bring high difficulty in controlling the splicing accuracy, making this implementation solution too difficult to implement. Therefore, high-speed, large-scale shaped marking of perovskite thin-film batteries is currently a hot problem in the industry with no solution. The accuracy is difficult to control through the movement of the XY platform. The size is limited by the control of the galvanometer lens and cannot cover the travel range of the shaped line. Grid splicing is also limited by the lack of splicing accuracy and cannot be achieved.

[0055] In order to solve the above technical problems, this embodiment provides a method for controlling irregular scribing of a galvanometer of a perovskite thin film battery, such as Figure 1 As shown, the following steps are included:

[0056] S101: Obtaining a profiled path pattern of a scribed line of a thin film layer of a perovskite thin film battery, wherein the profiled path pattern includes a straight path and at least one profiled path, wherein the direction of the straight path is marked as the x-axis direction, the direction of the thin film layer perpendicular to the x-axis direction is the y-axis direction, and the direction perpendicular to the thin film layer is the z-axis direction;

[0057] S102: Control the perovskite thin film battery to translate along the x-axis at a base speed V_0 via the carrying platform so as to be laser scribed in a straight line path by the focused laser of the laser focusing scribing head;

[0058] S103: obtaining a scratching trigger condition for the special-shaped path according to the special-shaped path graph, and when the scratching trigger condition is triggered, obtaining in real time an expected scratching speed V_s of the laser focused scratching head at a focused scratching point on the special-shaped path, where the focused scratching point is a focus of the focused laser on the thin film layer;

[0059] S104: parsing the absolute value and direction of the expected scribing speed V_s to obtain a Y-axis lateral movement control instruction of the carrier platform and a galvanometer fine-tuning control instruction of the laser focusing scribing head, and synchronously executing the Y-axis lateral movement control instruction of the carrier platform and the galvanometer fine-tuning control instruction to perform laser scribing of the special-shaped path;

[0060] S105: When the triggering condition for scribing the irregular path is terminated, the laser focusing scribing head resumes laser scribing of the straight path or terminates laser scribing.

[0061] By defining the special-shaped path graphics and coordinate axis benchmarks, the spatial relationship of the engraving path is clarified, ensuring that the starting and end points of the special-shaped path are accurately connected to the straight path, avoiding engraving breakpoints or overlaps, and improving the graphic integrity of the battery thin film layer; the straight path engraving is completed by using a carrier platform that moves at a uniform speed along the x-axis in conjunction with laser engraving. The large stroke and low vibration characteristics of the carrier platform are used to ensure the speed uniformity and laser energy density consistency of the straight segment engraving, avoiding uneven engraving depth or film damage caused by speed fluctuations; by obtaining the trigger conditions of the special-shaped path and the expected engraving speed V_s in real time, special-shaped engraving is achieved Precise start and end control; combined with the absolute value and direction analysis of V_s, dynamically generate coordinated instructions for the y-axis lateral movement of the carrier platform and the fine-tuning of the galvanometer, ensuring that the engraving speed strictly matches the geometric characteristics of the special-shaped path, avoiding engraving offset or graphic distortion caused by speed mismatch; through the synchronous control of the carrier platform and the galvanometer, the limitations of a single actuator are compensated, and the micron-level engraving accuracy of complex special-shaped paths is achieved, meeting the requirements of perovskite thin-film batteries for high consistency of engraved graphics; after the special-shaped path engraving is completed, the straight line engraving mode can be quickly restored to avoid shutdown or empty stroke caused by mode switching, thereby improving the overall engraving efficiency.

[0062] Example 2

[0063] This embodiment provides a preferred method for controlling irregular-shaped scribing lines of a galvanometer for a perovskite thin-film battery, comprising the following steps:

[0064] Obtain a profiled path pattern of a scribed line of a thin film layer of a perovskite thin film battery, wherein the profiled path pattern includes a straight path and at least one profiled path, wherein the direction of the straight path is marked as the x-axis direction, the direction of the thin film layer perpendicular to the x-axis direction is the y-axis direction, and the direction perpendicular to the thin film layer is the z-axis direction;

[0065] Specifically, the perovskite cell thin film layer is an xy plane, the direction of the marked straight path is the x-axis direction, the direction perpendicular to the x-axis direction is the y-axis direction, and the direction perpendicular to the thin film layer is the z-axis direction. The irregular paths include triangular paths, trapezoidal paths, and circular paths whose starting and ending points are connected to the straight path.

[0066] Controlling the perovskite thin film battery to translate along the x-axis at a base speed V_0 via a carrying platform so as to be laser scribed in a straight line path by a focused laser of a laser focusing scribing head;

[0067] Obtaining a scratching trigger condition for the shaped path according to the shaped path graph, and when the scratching trigger condition is triggered, obtaining in real time an expected scratching speed V_s of the laser focused scratching head at a focused scratching point on the shaped path, where the focused scratching point is the focus of the focused laser on the thin film layer;

[0068] There are two main triggering conditions for the carving of the special-shaped path:

[0069] The first solution is a pre-control solution. The idea is to pre-calculate the trigger time and end time of the special-shaped path and execute it according to the pre-calculated time. Specifically, the marking distance of the focused laser of the focused laser marking head along the straight path is calculated according to the special-shaped path graph, and the trigger time and end time of the special-shaped path are pre-calculated.

[0070] The second scheme is a real-time trajectory following control scheme. Specifically, the scratching trajectory of the focused laser of the laser focused scratching head on the thin film layer of the perovskite thin film battery is obtained according to the special-shaped path graph, the position of the focused scratching point on the scratching trajectory is detected in real time, and the scratching trigger condition is triggered when the focused scratching point reaches the starting point of the special-shaped path, and the scratching trigger condition is ended when the focused scratching point reaches the end point of the special-shaped path.

[0071] Analyzing the absolute value and direction of the expected scribing speed V_s to obtain the Y-axis lateral movement control instruction of the carrier platform and the galvanometer fine-tuning control instruction of the laser focusing scribing head, and synchronously executing the Y-axis lateral movement control instruction of the carrier platform and the galvanometer fine-tuning control instruction to perform laser scribing of the special-shaped path;

[0072] Specifically, the expected scoring speed V_s of the focused scoring point on the special-shaped path of the laser focused scoring head includes the absolute value of the special-shaped scoring speed and the direction of the special-shaped scoring speed. The absolute value of the special-shaped scoring speed is the absolute value of the real-time speed of the focused laser scoring along the special-shaped path, and the direction of the special-shaped scoring speed is the path direction of the focused laser scoring along the straight special-shaped path, or the tangent direction of the focused laser scoring along the curved special-shaped path.

[0073] Generally, the absolute value of the special-shaped scribing speed is required to be equal to the basic speed V_0 of the carrying platform, that is, no matter what the shape of the scribing line is, the laser scribing speed is kept consistent.

[0074] In a simplified implementation, the velocity component of the expected scribing velocity V_s in the y-axis direction is the lateral movement velocity of the carrying platform along the y-axis direction, and the y-axis lateral movement control instruction of the carrying platform is generated according to the lateral movement velocity of the carrying platform along the y-axis direction;

[0075] The speed component of the expected scratching speed V_s in the x-axis direction is the composite speed of the basic speed V_0 of the carrying platform and the fine-tuning displacement speed of the galvanometer of the laser focusing scratching head. The fine-tuning displacement speed of the galvanometer is calculated based on the expected scratching speed V_s and the basic speed V_0 of the carrying platform, and the galvanometer fine-tuning control instruction is generated based on the fine-tuning displacement speed of the galvanometer.

[0076] When the triggering condition for scribing the irregular path is terminated, the laser focusing scribing head resumes laser scribing of the straight path or terminates laser scribing.

[0077] Example 3

[0078] In a more refined control scheme, the steps of obtaining the Y-axis lateral movement control instruction of the carrier platform and the galvanometer fine-tuning control instruction of the laser focusing scribing head include:

[0079] The speed component of the expected scratching speed V_s in the y-axis direction is the composite speed of the lateral movement speed of the carrying platform along the y-axis direction and the y-axis component speed of the galvanometer fine-tuning displacement speed in the y-axis direction. The y-axis lateral movement control instruction of the carrying platform is obtained according to the speed component of the expected scratching speed V_s in the y-axis direction.

[0080] Perform frequency separation on the velocity component V_sy of the expected scratching velocity V_s in the y-axis direction and obtain a low-frequency component V_sylow and a high-frequency component V_syhigh, wherein the frequency range of the low-frequency component matches the response bandwidth of the carrier platform, and the frequency range of the high-frequency component matches the response bandwidth of the galvanometer;

[0081] Using the low-frequency component as the lateral movement speed of the carrying platform along the y-axis, calculating the output current or voltage signal of the motion controller of the carrying platform according to the lateral movement speed of the carrying platform along the y-axis, and using the output current or voltage signal as the lateral movement control instruction of the carrying platform along the y-axis;

[0082] The high-frequency component is used as the angular velocity control instruction of the galvanometer, the target angular velocity of the galvanometer is calculated based on the deflection angle of the galvanometer reflector and the spot of the focused laser, and the target angular velocity is converted into a current signal by the galvanometer driver to generate a galvanometer fine-tuning control instruction one;

[0083] The speed component of the expected scribing speed V_s in the x-axis direction is the composite speed of the base speed V_0 of the carrying platform along the x-axis direction and the x-axis component speed of the galvanometer fine-tuning displacement speed in the x-axis direction. The x-axis component speed of the galvanometer fine-tuning displacement speed is calculated based on the speed component of the expected scribing speed V_s in the x-axis direction and the base speed V_0 of the carrying platform. The second galvanometer fine-tuning control instruction is generated based on the x-axis component speed of the displacement fine-tuning speed.

[0084] A galvanometer fine-tuning control instruction is generated according to the galvanometer fine-tuning control instruction one and the galvanometer fine-tuning control instruction two.

[0085] The traditional solution has the following technical problems in velocity component processing, control command generation and feedback verification: the traditional method does not perform frequency separation on the y-axis component (V_sy) of the expected engraving velocity V_s, and is directly controlled by a single actuator. As a result, if the high-frequency component is processed by the carrier platform, speed delay will occur due to response lag, causing the engraving path to deviate; if the low-frequency component is processed by the galvanometer, the galvanometer travel is limited and cannot cover large displacement requirements, resulting in engraving interruption or splicing errors.

[0086] Separating V_sy into low-frequency and high-frequency components allows the carrier platform to focus on large displacement and low-frequency control, avoiding speed delays caused by high-frequency response lag; the galvanometer focuses on small displacement and high-frequency compensation, avoiding engraving interruptions caused by limited stroke.

[0087] Example 4

[0088] This embodiment provides a method for synchronously executing the Y-axis lateral movement control instruction of the carrier platform and the galvanometer fine-tuning control instruction to perform laser scribing of a special-shaped path:

[0089] The system control chip is provided with a high-precision synchronous clock module, which is connected to the carrier platform controller and the galvanometer controller and unifies the time reference;

[0090] When generating the Y-axis lateral movement control instructions and the galvanometer fine-tuning control instructions of the carrier platform, a timestamp is added to each instruction based on a unified high-precision synchronous clock module. The timestamp includes the target execution start time t_0 of the instruction.

[0091] After receiving the control instructions bound to the timestamp, the platform controller and the galvanometer controller respectively detect the current time in real time based on the high-precision synchronous clock module. When the current time reaches t_0, the Y-axis lateral movement control instruction and the galvanometer fine-tuning control instruction are synchronously triggered.

[0092] The position encoder signal of the carrier platform and the angular velocity sensor signal of the galvanometer are collected synchronously at a fixed period through the synchronous communication CAN bus, and the collection time is strictly aligned with the high-precision synchronous clock module;

[0093] Calculate the actual delay Δt_1 of the platform executing the instruction and the actual delay Δt_2 of the galvanometer executing the instruction. If |Δt_1 - Δt_2| > the preset threshold, when generating the control instruction for the subsequent laser scribing of the special-shaped path, adjust the timestamp to t_0' = t_0 - max(Δt_1, Δt_2) to make the actual start time of the two actions consistent.

[0094] A high-precision crystal oscillator or external synchronization signal source, such as a PTP protocol clock, provides a unified time base for the carrier platform and the galvanometer controller. The timestamp error between the two can be controlled within 1μs, ensuring consistency in the instruction execution time and avoiding action misalignment due to clock deviation. Timestamp binding and synchronous triggering eliminate startup delay differences: Each control instruction is bound to a unified timestamp t0. The controller monitors the current time based on a unified clock and synchronously triggers execution at time t0, solving the problem of action start time misalignment caused by different controller response speeds in traditional solutions. Synchronous status acquisition ensures the accuracy of feedback data: The carrier platform position and galvanometer angle data are synchronously collected through EtherCAT or CAN bus at a 100μs period.

[0095] By calculating the execution delays Δt1 and Δt2 of the carrier platform and the galvanometer in real time and adjusting the timestamps of subsequent instructions, the deviation between the actual action start times of the two can be reduced from 10-50μs to ≤5μs; at the same time, by adjusting the controller parameters, the synchronization error can be reduced from 10μs to ≤2μs, ensuring that the total offset of continuous special-shaped path engraving is ≤5μm to meet the ±10μm process requirement of perovskite cells.

[0096] Example 5

[0097] This embodiment provides a galvanometer irregular-shaped scribing control device for a perovskite thin-film battery, comprising:

[0098] A path parsing module 100 is configured to obtain a profile path pattern of a scribed line of a thin film layer of a perovskite thin film battery, wherein the profile path pattern includes a straight path and at least one profile path, wherein the direction of the straight path is the x-axis direction, the direction of the thin film layer perpendicular to the x-axis direction is the y-axis direction, and the direction perpendicular to the thin film layer is the z-axis direction;

[0099] The platform x-axis control module 200 is used to obtain a perovskite thin film battery that is translated along the x-axis at a base speed V_0 by the carrying platform so as to be laser-scribed in a straight path by the focused laser of the laser focusing scribing head;

[0100] The special-shaped trigger module 300 is used to obtain the scratching trigger condition of the special-shaped path according to the special-shaped path graph. When the scratching trigger condition is triggered, the expected scratching speed V_s of the laser focused scratching head at the focused scratching point on the special-shaped path is obtained in real time. The focused scratching point is the focus of the focused laser on the thin film layer.

[0101] The special-shaped path control instruction module 400 is used to analyze the absolute value and direction of the expected scribing speed V_s to obtain the y-axis lateral movement control instruction of the carrier platform and the galvanometer fine-tuning control instruction of the laser focusing scribing head, and synchronously execute the y-axis lateral movement control instruction of the carrier platform and the galvanometer fine-tuning control instruction to perform laser scribing of the special-shaped path;

[0102] The special-shaped path ending module 500 is used to enable the laser focusing scribing head to resume laser scribing of a straight path or to end laser scribing when the trigger condition for scribing the special-shaped path ends.

[0103] Figure 3 FIG1 shows an internal structure diagram of a computer device in an embodiment. The computer device can be a terminal or a server. Figure 3 As shown, the computer device includes a processor, a memory, and a network interface connected via a system bus. The memory includes a non-volatile storage medium and an internal memory. The non-volatile storage medium of the computer device stores an operating system and may also store a computer program. When the computer program is executed by the processor, the processor can implement the line control method. The memory may also store a computer program. When the computer program is executed by the processor, the processor can implement the line control method. It will be understood by those skilled in the art that Figure 3 The structure shown in the figure is only a block diagram of a part of the structure related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than shown in the figure, or combine certain components, or have a different component arrangement.

[0104] In one embodiment, a computer device is provided, comprising a memory and a processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, the processor performs the following steps:

[0105] Obtain a profiled path pattern of a scribed line of a thin film layer of a perovskite thin film battery, wherein the profiled path pattern includes a straight path and at least one profiled path, wherein the direction of the straight path is marked as the x-axis direction, the direction of the thin film layer perpendicular to the x-axis direction is the y-axis direction, and the direction perpendicular to the thin film layer is the z-axis direction;

[0106] Controlling the perovskite thin film battery to translate along the x-axis at a base speed V_0 via a carrying platform so as to be laser scribed in a straight line path by a focused laser of a laser focusing scribing head;

[0107] Obtaining a scratching trigger condition for the shaped path according to the shaped path graph, and when the scratching trigger condition is triggered, obtaining in real time an expected scratching speed V_s of the laser focused scratching head at a focused scratching point on the shaped path, where the focused scratching point is the focus of the focused laser on the thin film layer;

[0108] Analyzing the absolute value and direction of the expected scribing speed V_s to obtain the Y-axis lateral movement control instruction of the carrier platform and the galvanometer fine-tuning control instruction of the laser focusing scribing head, and synchronously executing the Y-axis lateral movement control instruction of the carrier platform and the galvanometer fine-tuning control instruction to perform laser scribing of the special-shaped path;

[0109] When the triggering condition for scribing the irregular path is terminated, the laser focusing scribing head resumes laser scribing of the straight path or terminates laser scribing.

[0110] In one embodiment, a computer-readable storage medium is provided, storing a computer program. When the computer program is executed by a processor, the processor performs the following steps:

[0111] Obtain a profiled path pattern of a scribed line of a thin film layer of a perovskite thin film battery, wherein the profiled path pattern includes a straight path and at least one profiled path, wherein the direction of the straight path is marked as the x-axis direction, the direction of the thin film layer perpendicular to the x-axis direction is the y-axis direction, and the direction perpendicular to the thin film layer is the z-axis direction;

[0112] Controlling the perovskite thin film battery to translate along the x-axis at a base speed V_0 via a carrying platform so as to be laser scribed in a straight line path by a focused laser of a laser focusing scribing head;

[0113] Obtaining a scratching trigger condition for the shaped path according to the shaped path graph, and when the scratching trigger condition is triggered, obtaining in real time an expected scratching speed V_s of the laser focused scratching head at a focused scratching point on the shaped path, where the focused scratching point is the focus of the focused laser on the thin film layer;

[0114] Analyzing the absolute value and direction of the expected scribing speed V_s to obtain the Y-axis lateral movement control instruction of the carrier platform and the galvanometer fine-tuning control instruction of the laser focusing scribing head, and synchronously executing the Y-axis lateral movement control instruction of the carrier platform and the galvanometer fine-tuning control instruction to perform laser scribing of the special-shaped path;

[0115] When the triggering condition for scribing the irregular path is terminated, the laser focusing scribing head resumes laser scribing of the straight path or terminates laser scribing.

[0116] Those skilled in the art will appreciate that all or part of the processes in the above-described method embodiments can be implemented by instructing the relevant hardware through a computer program. The program can be stored in a non-volatile computer-readable storage medium. When executed, the program can include the processes of the above-described method embodiments. Any reference to memory, storage, database, or other media used in the various embodiments provided herein may include non-volatile and / or volatile memory. Non-volatile memory may include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or flash memory. Volatile memory may include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in various forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link DRAM (SLDRAM), RAMbus direct RAM (RDRAM), direct RAMbus dynamic RAM (DRDRAM), and RAMbus dynamic RAM (RDRAM).

[0117] The technical features of the above embodiments can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0118] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present invention, all of which fall within the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.

Claims

1. A method for controlling irregular scribing of a galvanometer for a perovskite thin film battery, characterized in that: The steps include: Obtain a profiled path pattern of a scribed line of a thin film layer of a perovskite thin film battery, wherein the profiled path pattern includes a straight path and at least one profiled path, wherein the direction of the straight path is marked as the x-axis direction, the direction of the thin film layer perpendicular to the x-axis direction is the y-axis direction, and the direction perpendicular to the thin film layer is the z-axis direction; Controlling the perovskite thin film battery to translate along the x-axis at a base speed V_0 via a carrying platform so as to be laser scribed in a straight line path by a focused laser of a laser focusing scribing head; Obtaining a scratching trigger condition for the shaped path according to the shaped path graph, and when the scratching trigger condition is triggered, obtaining in real time an expected scratching speed V_s of the laser focused scratching head at a focused scratching point on the shaped path, where the focused scratching point is the focus of the focused laser on the thin film layer; Analyzing the absolute value and direction of the expected scribing speed V_s to obtain the Y-axis lateral movement control instruction of the carrier platform and the galvanometer fine-tuning control instruction of the laser focusing scribing head, and synchronously executing the Y-axis lateral movement control instruction of the carrier platform and the galvanometer fine-tuning control instruction to perform laser scribing of the special-shaped path; When the trigger condition for the marking of the special-shaped path is terminated, the laser focusing marking head resumes the laser marking of the straight path or ends the laser marking; The triggering conditions for the special-shaped path include: Calculate the marking distance of the focused laser of the focused laser marking head along the straight path according to the special-shaped path graph and pre-calculate the trigger time and end time of the special-shaped path; Alternatively, a scribing track of a focused laser of a laser focusing scribing head on a thin film layer of a perovskite thin film battery is obtained according to the profile path pattern, the position of a focused scribing point on the scribing track is detected in real time, and a scribing trigger condition is triggered when the focused scribing point reaches the starting point of the profile path, and the scribing trigger condition is terminated when the focused scribing point reaches the end point of the profile path; Among them, the expected scoring speed V_s of the focused scoring point of the laser focused scoring head on the special-shaped path includes the absolute value of the special-shaped scoring speed and the direction of the special-shaped scoring speed. The absolute value of the special-shaped scoring speed is the absolute value of the real-time speed of the focused laser scoring along the special-shaped path, and the direction of the special-shaped scoring speed is the path direction of the focused laser scoring along the special-shaped path, or the tangent direction of the focused laser scoring along the curved special-shaped path.

2. The method for controlling irregular scribing of a perovskite thin film battery according to claim 1, characterized in that: The special-shaped paths include triangular paths, trapezoidal paths, and arc paths whose starting and ending points are connected to a straight path.

3. The method for controlling irregular-shaped scribing of a perovskite thin-film battery according to claim 1, wherein: The absolute value of the special-shaped engraving speed is equal to the basic speed V_0 of the carrying platform.

4. The method for controlling irregular-shaped scribing of a perovskite thin-film battery according to claim 1, wherein: The step of obtaining the Y-axis lateral movement control instruction of the carrier platform and the galvanometer fine-tuning control instruction of the laser focusing scribing head includes: The velocity component of the expected scribing velocity V_s in the y-axis direction is the lateral movement velocity of the carrying platform along the y-axis direction, and a y-axis lateral movement control instruction of the carrying platform is generated according to the lateral movement velocity of the carrying platform along the y-axis direction; The speed component of the expected scratching speed V_s in the x-axis direction is the composite speed of the basic speed V_0 of the carrying platform and the fine-tuning displacement speed of the galvanometer of the laser focusing scratching head. The fine-tuning displacement speed of the galvanometer is calculated based on the expected scratching speed V_s and the basic speed V_0 of the carrying platform, and the galvanometer fine-tuning control instruction is generated based on the fine-tuning displacement speed of the galvanometer.

5. The method for controlling irregular-shaped scribing of a perovskite thin-film battery according to claim 1, wherein: The step of obtaining the Y-axis lateral movement control instruction of the carrier platform and the galvanometer fine-tuning control instruction of the laser focusing scribing head includes: The speed component of the expected engraving speed V_s in the y-axis direction is the composite speed of the lateral movement speed of the carrying platform along the y-axis direction and the y-axis component speed of the galvanometer fine-tuning displacement speed in the y-axis direction. The y-axis lateral movement control instruction of the carrying platform and the galvanometer fine-tuning control instruction 1 are obtained according to the speed component of the expected engraving speed V_s in the y-axis direction. The speed component of the expected scribing speed V_s in the x-axis direction is the composite speed of the base speed V_0 of the carrying platform along the x-axis direction and the x-axis component speed of the galvanometer fine-tuning displacement speed in the x-axis direction. The x-axis component speed of the galvanometer fine-tuning displacement speed is calculated based on the speed component of the expected scribing speed V_s in the x-axis direction and the base speed V_0 of the carrying platform. The second galvanometer fine-tuning control instruction is generated based on the x-axis component speed of the displacement fine-tuning speed. A galvanometer fine-tuning control instruction is generated according to the galvanometer fine-tuning control instruction one and the galvanometer fine-tuning control instruction two.

6. The method for controlling irregular-shaped scribing of a perovskite thin-film battery according to claim 5, characterized in that: The step of obtaining the y-axis lateral movement control instruction of the carrying platform and the galvanometer fine-tuning control instruction 1 according to the speed component of the expected scratching speed V_s in the y-axis direction includes: Perform frequency separation on the velocity component V_sy of the expected scratching velocity V_s in the y-axis direction and obtain a low-frequency component V_sylow and a high-frequency component V_syhigh, wherein the frequency range of the low-frequency component matches the response bandwidth of the carrier platform, and the frequency range of the high-frequency component matches the response bandwidth of the galvanometer; Using the low-frequency component as the lateral movement speed of the carrying platform along the y-axis, calculating the output current or voltage signal of the motion controller of the carrying platform according to the lateral movement speed of the carrying platform along the y-axis, and using the output current or voltage signal as the lateral movement control instruction of the carrying platform along the y-axis; The high-frequency component is used as the angular velocity control instruction of the galvanometer, and the target angular velocity of the galvanometer is calculated based on the deflection angle of the galvanometer reflector and the spot of the focused laser. The target angular velocity is converted into a current signal through the galvanometer driver and a galvanometer fine-tuning control instruction is generated.

7. The method for controlling irregular-shaped scribing of a perovskite thin-film battery according to claim 1, wherein: The step of synchronously executing the Y-axis lateral movement control instruction of the carrier platform and the galvanometer fine-tuning control instruction to perform laser scribing of the special-shaped path includes: The system control chip is provided with a high-precision synchronous clock module, which is connected to the carrier platform controller and the galvanometer controller and unifies the time reference; When generating the Y-axis lateral movement control instructions and the galvanometer fine-tuning control instructions of the carrier platform, a timestamp is added to each instruction based on a unified high-precision synchronous clock module. The timestamp includes the target execution start time t_0 of the instruction. After receiving the control instructions bound to the timestamp, the platform controller and the galvanometer controller respectively detect the current time in real time based on the high-precision synchronous clock module. When the current time reaches t_0, the Y-axis lateral movement control instruction and the galvanometer fine-tuning control instruction are synchronously triggered. The position encoder signal of the carrier platform and the angular velocity sensor signal of the galvanometer are collected synchronously at a fixed period through the synchronous communication CAN bus, and the collection time is strictly aligned with the high-precision synchronous clock module; Calculate the actual delay Δt_1 of the platform executing the instruction and the actual delay Δt_2 of the galvanometer executing the instruction. If |Δt_1 - Δt_2| > the preset threshold, when generating the control instruction for the subsequent laser scribing of the special-shaped path, adjust the timestamp to t_0' = t_0 - max(Δt_1, Δt_2) to make the actual start time of the two actions consistent.

8. A galvanometer irregular-shaped scribing control device for a perovskite thin-film battery, characterized in that: A method for controlling irregular scribing lines of a galvanometer for a perovskite thin film battery according to any one of claims 1 to 7, comprising: A path parsing module is used to obtain a profiled path graph of the ruled line of the thin film layer of the perovskite thin film battery, wherein the profiled path graph includes a straight path and at least one profiled path, wherein the direction of the straight path is marked as the x-axis direction, the direction of the thin film layer perpendicular to the x-axis direction is the y-axis direction, and the direction perpendicular to the thin film layer is the z-axis direction; The platform x-axis control module is used to obtain the perovskite thin film battery by translating along the x-axis direction at a basic speed V_0 through the carrying platform so as to be laser-scribed in a straight path by the focused laser of the laser focusing scribing head; A special-shaped trigger module is used to obtain a scratching trigger condition for the special-shaped path according to the special-shaped path graph. When the scratching trigger condition is triggered, the expected scratching speed V_s of the laser focused scratching head at the focused scratching point on the special-shaped path is obtained in real time. The focused scratching point is the focus of the focused laser on the thin film layer. A special-shaped path control instruction module is used to parse the absolute value and direction of the expected scribing speed V_s to obtain the y-axis traverse control instruction of the carrier platform and the galvanometer fine-tuning control instruction of the laser focusing scribing head, and synchronously execute the y-axis traverse control instruction of the carrier platform and the galvanometer fine-tuning control instruction to perform laser scribing of the special-shaped path; The special-shaped path ending module is used to enable the laser focusing scribing head to resume laser scribing of a straight path or end laser scribing when the scribing trigger condition for the special-shaped path is ended.

Images