A high heat-resistant electronic interconnect wire and its preparation method

Abstract

This invention discloses a high-heat-resistant electronic interconnect wire and its preparation method, relating to the field of electronic interconnect wire preparation technology. The method involves immersing a copper conductor in an insulating coating, followed by a heating and heat preservation treatment, and finally assembling the terminals to obtain the high-heat-resistant electronic interconnect wire. During the high-temperature heat preservation process after the conductor immersion coating treatment, the cyano groups on the side chains of the modified resin and the cyano groups on the hexagonal boron nitride condense to form a triazine ring structure, thereby increasing the number of crosslinking sites and making the connections between molecular chains tighter, forming a more stable network structure. Furthermore, the fluorine element contained therein, with its large fluorine atoms and high electronegativity, restricts the movement of molecular chains and reduces the thermal motion of molecular chain segments, thus improving the heat resistance of the material. The nitrogen atoms on the triazine ring in the modified resin can form an intramolecular hydrogen bond network with the carbonyl groups in the polyimide, cooperating with the organosilicon molecular chain segments to maintain the stability of the molecular chain at high temperatures.

Description

Technical Field

[0001] This invention relates to the field of electronic interconnect fabrication technology, specifically to a high heat-resistant electronic interconnect and its fabrication method. Background Technology

[0002] With the increasing prevalence of electronic devices in modern technology, these devices require various connecting cables for signal transmission. While traditional electronic connecting cables meet everyday needs, they often fall short in certain specialized applications, such as industrial control equipment in high-temperature and high-humidity environments, automotive electronic systems, and aerospace. These environments demand not only excellent electrical performance and mechanical strength from the connecting cables but also the ability to withstand high temperatures, resist aging, and resist decomposition and combustion to ensure stable operation of equipment in extreme conditions. Various high-temperature resistant materials and technologies have emerged for use in connecting cable manufacturing. However, existing high-temperature resistant connecting cables still suffer from problems such as unstable conductivity, insufficient mechanical strength, and susceptibility to aging and corrosion at high temperatures. These issues not only reduce the lifespan of the connecting cables but can also affect the reliability of the entire device, leading to system malfunctions or anomalies. Summary of the Invention

[0003] The purpose of this invention is to provide a high heat-resistant electronic interconnect wire and its preparation method, which solves the problem that the function of electronic interconnect wires is affected by high temperature environment at present.

[0004] The objective of this invention can be achieved through the following technical solutions:

[0005] A method for preparing a high heat-resistant electronic interconnect wire specifically includes the following steps:

[0006] Step A1: Mix hexagonal boron nitride and sodium hydroxide aqueous solution evenly, and reflux for 20-22 h at a speed of 60-80 r / min and a temperature of 115-120℃. Wash with hydrochloric acid until neutral, disperse the substrate in ethanol, and stir at a speed of 200-300 r / min and a temperature of 70-80℃. Add 3-cyanopropyltrimethoxysilane and deionized water, and react for 3-5 h to obtain the modified filler.

[0007] Step A2: Mix the modified resin, modified filler and DMF evenly to obtain an insulating coating. Immerse the copper conductor in the insulating coating at a dipping speed of 1.5-2 m / min. After dipping, keep it at a temperature of 380-385℃ for 3-5 hours. Finally, assemble the terminals to obtain a high heat-resistant electronic connection wire.

[0008] Furthermore, in step A1, the ratio of hexagonal boron nitride, sodium hydroxide aqueous solution, ethanol, 3-cyanopropyltrimethoxysilane, and deionized water is 1g:100mL:30mL:1mL:5mL, and the concentration of the sodium hydroxide aqueous solution is 5mol / L.

[0009] Furthermore, the weight ratio of the modified resin, modified filler, and DMF mentioned in step A2 is 10:3:60.

[0010] Furthermore, the modified resin is prepared by the following steps:

[0011] Step B1: Mix octaphenylcyclotetrasiloxane, methacryloxypropylmethyldiethoxysilane, tetramethylsodium hydroxide, 1,3-bis(3-aminopropyl)tetramethyldisiloxane, deionized water and dimethyl sulfoxide evenly, and react for 2-3 hours at a speed of 200-300 r / min and a temperature of 105-110℃ to obtain polysiloxane;

[0012] Step B2: Mix polysiloxane, melamine, 4,4'-diaminodiphenyl ether and N-methylpyrrolidone evenly, under nitrogen protection, and stir at 150-200 r / min and 20-25℃. Add pyromellitic anhydride and react for 2-3 h. Then raise the temperature to 180-190℃ and react for 5-7 h to obtain polyimide. Mix polyimide, trichlorosilane, chloroplatinic acid and DMF evenly, under nitrogen protection, and react at 120-150 r / min and 85-90℃ for 4-6 h to obtain pretreated polyimide.

[0013] Step B3: Mix lithium dimethylhydrosilyl alcohol and DMF, stir and add trifluoropropylmethylcyclotrisiloxane at 150-200 r / min and 0℃, heat to 25-30℃ and react for 20-24 h, then add pretreated polyimide and continue the reaction for 1-1.5 h to obtain modified polyimide. Mix the modified polyimide, 3-methyl-4-vinylbenzyl nitrile, chloroplatinic acid and DMF evenly, purge with nitrogen, and react for 4-6 h at 120-150 r / min and 85-90℃ to obtain modified resin.

[0014] Furthermore, the ratio of octaphenylcyclotetrasiloxane, methacryloxypropylmethyldiethoxysilane, tetramethylsodium hydroxide, 1,3-bis(3-aminopropyl)tetramethyldisiloxane, deionized water and dimethyl sulfoxide in step B1 is 3.8 mol:1 mol:6 mol:4 mol:3 L:10 L.

[0015] Furthermore, in step B2, the molar ratio of polysiloxane, melamine, 4,4'-diaminodiphenyl ether and benzoic anhydride is 3:1:8:12.1, the molar ratio of the double bond on the polyimide to trichlorosilane is 1:1, and the amount of chloroplatinic acid used is 1‰ of the mass of trichlorosilane.

[0016] Furthermore, in step B3, the molar ratio of lithium dimethylhydrosilyl alcohol, trifluoropropylmethylcyclotrisiloxane, and the Si-Cl bond on the pretreated polyimide is 1:4:1, the molar ratio of the Si-H bond on the modified polyimide to 3-methyl-4-vinylbenzylnitrile is 1:1, and the amount of chloroplatinic acid is 1‰ of the modifier mass.

[0017] The beneficial effects of the present invention are as follows: The present invention discloses a high heat-resistant electronic connecting wire by immersing a copper conductor in an insulating coating, followed by a heating and heat preservation treatment, and finally assembling the terminals to obtain a high heat-resistant electronic connecting wire. The insulating coating includes the following raw materials: modified resin, modified filler and DMF. The modified filler is made by treating hexagonal boron nitride with an aqueous sodium hydroxide solution to graft active hydroxyl groups onto the surface, and then treating it with 3-cyanopropyltrimethoxysilane to graft cyano groups onto the surface to obtain the modified filler.

[0018] The modified resin is prepared by ring-opening octaphenylcyclotetrasiloxane as a raw material, followed by hydrolytic condensation with methacryloyloxypropylmethyldiethoxysilane, and finally end-capping with 1,3-bis(3-aminopropyl)tetramethyldisiloxane to obtain polysiloxane. Polysiloxane, melamine, 4,4'-diaminodiphenyl ether, and phenyltetracarboxylic anhydride are reacted to form polyamic acid, which is then imidized at high temperature to obtain polyimide. Polyimide is then reacted with trichlorosilane, causing the double bonds on the polyimide to bind with the trichlorosilane. The Si-H bonds on the polyimide react to prepare a pretreated polyimide. Using lithium dimethylhydrosilyl alcohol as an initiator and trifluoropropylmethylcyclotrisiloxane as a polymerization monomer, the pretreated polyimide is added to react with the lithium silyl alcohol on the pretreated polyimide to prepare a modified polyimide. The modified polyimide is then reacted with 3-methyl-4-vinylbenzyl nitrile to react with the double bonds on the modified polyimide to prepare a modified resin.

[0019] During the high-temperature insulation process after conductor dip-coating, the cyano groups on the side chains of the modified resin and the cyano groups on the hexagonal boron nitride condense to form a triazine ring structure, which increases the number of crosslinking sites, making the connection between molecular chains tighter and forming a more stable network structure. In addition, the fluorine element contained therein has a large volume of fluorine atoms and high electronegativity, which restricts the movement of molecular chains and reduces the thermal motion of molecular chain segments, thereby improving the heat resistance of the material. The nitrogen atoms on the triazine ring in the modified resin can form an intramolecular hydrogen bond network with the carbonyl groups in the polyimide, which, together with the organosilicon molecular chain segments, can maintain the stability of the molecular chain at high temperatures. Detailed Implementation

[0020] The technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0021] Example 1: A method for preparing a high heat-resistant electronic interconnect wire, specifically including the following steps:

[0022] Step A1: Mix hexagonal boron nitride and sodium hydroxide aqueous solution evenly, reflux for 20 h at 60 r / min and 115 °C, wash with hydrochloric acid until neutral, disperse the substrate in ethanol, stir and add 3-cyanopropyltrimethoxysilane and deionized water at 200 r / min and 70 °C, and react for 3 h to obtain the modified filler;

[0023] Step A2: Mix the modified resin, modified filler and DMF evenly to obtain an insulating coating. Immerse the copper conductor in the insulating coating at a dipping speed of 1.5 m / min. After dipping, keep it at 380℃ for 3 hours. Finally, assemble the terminals to obtain a high heat-resistant electronic connection wire.

[0024] The ratio of hexagonal boron nitride, sodium hydroxide aqueous solution, ethanol, 3-cyanopropyltrimethoxysilane and deionized water in step A1 is 1g:100mL:30mL:1mL:5mL, and the concentration of sodium hydroxide aqueous solution is 5mol / L.

[0025] The weight ratio of the modified resin, modified filler, and DMF mentioned in step A2 is 10:3:60.

[0026] The modified resin is prepared by the following steps:

[0027] Step B1: Octaphenylcyclotetrasiloxane, methacryloxypropylmethyldiethoxysilane, tetramethylsodium hydroxide, 1,3-bis(3-aminopropyl)tetramethyldisiloxane, deionized water and dimethyl sulfoxide are mixed evenly and reacted for 2 hours at a speed of 200 r / min and a temperature of 105℃ to obtain polysiloxane.

[0028] Step B2: Polysiloxane, melamine, 4,4'-diaminodiphenyl ether and N-methylpyrrolidone are mixed evenly, and nitrogen gas is introduced for protection. Under the conditions of 150 r / min and 20°C, the mixture is stirred and pyromellitic anhydride is added. After reacting for 2 h, the temperature is raised to 180°C and reacted for 5 h to obtain polyimide. Polyimide, trichlorosilane, chloroplatinic acid and DMF are mixed evenly, and nitrogen gas is introduced for protection. Under the conditions of 120 r / min and 85°C, the mixture is reacted for 4 h to obtain pretreated polyimide.

[0029] Step B3: Lithium dimethylhydrosilyl alcohol and DMF are mixed and stirred at 150 r / min and 0°C. Trifluoropropylmethylcyclotrisiloxane is added, the temperature is raised to 25°C, and the reaction is carried out for 20 h. Then, pretreated polyimide is added, and the reaction is continued for 1 h to obtain modified polyimide. Modified polyimide, 3-methyl-4-vinylbenzyl nitrile, chloroplatinic acid and DMF are mixed evenly, nitrogen gas is introduced for protection, and the reaction is carried out at 120 r / min and 85°C for 4 h to obtain modified resin.

[0030] The ratio of octaphenylcyclotetrasiloxane, methacryloxypropylmethyldiethoxysilane, tetramethylsodium hydroxide, 1,3-bis(3-aminopropyl)tetramethyldisiloxane, deionized water and dimethyl sulfoxide in step B1 is 3.8 mol:1 mol:6 mol:4 mol:3 L:10 L.

[0031] In step B2, the molar ratio of polysiloxane, melamine, 4,4'-diaminodiphenyl ether and benzoic anhydride is 3:1:8:12.1, the molar ratio of the double bond on the polyimide to trichlorosilane is 1:1, and the amount of chloroplatinic acid is 1‰ of the mass of trichlorosilane.

[0032] In step B3, the molar ratio of lithium dimethylhydrosilyl alcohol, trifluoropropylmethylcyclotrisiloxane, and the Si-Cl bond on the pretreated polyimide is 1:4:1, the molar ratio of the Si-H bond on the modified polyimide to 3-methyl-4-vinylbenzylnitrile is 1:1, and the amount of chloroplatinic acid is 1‰ of the modifier mass.

[0033] Example 2, a method for preparing a high heat-resistant electronic interconnect wire, specifically includes the following steps:

[0034] Step A1: Mix hexagonal boron nitride and sodium hydroxide aqueous solution evenly, reflux for 20 h at 60 r / min and 120 °C, wash with hydrochloric acid until neutral, disperse the substrate in ethanol, stir and add 3-cyanopropyltrimethoxysilane and deionized water at 300 r / min and 75 °C, and react for 4 h to obtain the modified filler;

[0035] Step A2: Mix the modified resin, modified filler and DMF evenly to obtain an insulating coating. Immerse the copper conductor in the insulating coating at a dipping speed of 2 m / min. After dipping, keep it at 380℃ for 4 hours. Finally, assemble the terminals to obtain a high heat-resistant electronic connection wire.

[0036] The ratio of hexagonal boron nitride, sodium hydroxide aqueous solution, ethanol, 3-cyanopropyltrimethoxysilane and deionized water in step A1 is 1g:100mL:30mL:1mL:5mL, and the concentration of sodium hydroxide aqueous solution is 5mol / L.

[0037] The weight ratio of the modified resin, modified filler, and DMF mentioned in step A2 is 10:3:60.

[0038] The modified resin is prepared by the following steps:

[0039] Step B1: Octaphenylcyclotetrasiloxane, methacryloxypropylmethyldiethoxysilane, tetramethylsodium hydroxide, 1,3-bis(3-aminopropyl)tetramethyldisiloxane, deionized water and dimethyl sulfoxide are mixed evenly and reacted for 3 hours at a speed of 300 r / min and a temperature of 108 °C to obtain polysiloxane.

[0040] Step B2: Polysiloxane, melamine, 4,4'-diaminodiphenyl ether and N-methylpyrrolidone are mixed evenly, and nitrogen gas is introduced for protection. Under the conditions of 150 r / min and 25℃, the mixture is stirred and pyromellitic anhydride is added. After reacting for 2.5 h, the temperature is raised to 185℃ and reacted for 6 h to obtain polyimide. Polyimide, trichlorosilane, chloroplatinic acid and DMF are mixed evenly, and nitrogen gas is introduced for protection. Under the conditions of 150 r / min and 88℃, the mixture is reacted for 5 h to obtain pretreated polyimide.

[0041] Step B3: Lithium dimethylhydrosilyl alcohol and DMF are mixed and stirred at 150 r / min and 0°C. Trifluoropropylmethylcyclotrisiloxane is added, the temperature is raised to 28°C, and the reaction is carried out for 22 h. Then, pretreated polyimide is added, and the reaction is continued for 1.3 h to obtain modified polyimide. Modified polyimide, 3-methyl-4-vinylbenzyl nitrile, chloroplatinic acid and DMF are mixed evenly, nitrogen gas is introduced for protection, and the reaction is carried out at 120 r / min and 90°C for 5 h to obtain modified resin.

[0042] The ratio of octaphenylcyclotetrasiloxane, methacryloxypropylmethyldiethoxysilane, tetramethylsodium hydroxide, 1,3-bis(3-aminopropyl)tetramethyldisiloxane, deionized water and dimethyl sulfoxide in step B1 is 3.8 mol:1 mol:6 mol:4 mol:3 L:10 L.

[0043] In step B2, the molar ratio of polysiloxane, melamine, 4,4'-diaminodiphenyl ether and benzoic anhydride is 3:1:8:12.1, the molar ratio of the double bond on the polyimide to trichlorosilane is 1:1, and the amount of chloroplatinic acid is 1‰ of the mass of trichlorosilane.

[0044] In step B3, the molar ratio of lithium dimethylhydrosilyl alcohol, trifluoropropylmethylcyclotrisiloxane, and the Si-Cl bond on the pretreated polyimide is 1:4:1, the molar ratio of the Si-H bond on the modified polyimide to 3-methyl-4-vinylbenzylnitrile is 1:1, and the amount of chloroplatinic acid is 1‰ of the modifier mass.

[0045] Example 3: A method for preparing a high heat-resistant electronic interconnect wire, specifically including the following steps:

[0046] Step A1: Mix hexagonal boron nitride and sodium hydroxide aqueous solution evenly, reflux for 22 h at 80 r / min and 120 °C, wash with hydrochloric acid until neutral, disperse the substrate in ethanol, stir and add 3-cyanopropyltrimethoxysilane and deionized water at 300 r / min and 80 °C, and react for 5 h to obtain the modified filler;

[0047] Step A2: Mix the modified resin, modified filler and DMF evenly to obtain an insulating coating. Immerse the copper conductor in the insulating coating at a dipping speed of 2 m / min. After dipping, keep it at 385℃ for 5 hours. Finally, assemble the terminals to obtain a high heat-resistant electronic connection wire.

[0048] The ratio of hexagonal boron nitride, sodium hydroxide aqueous solution, ethanol, 3-cyanopropyltrimethoxysilane and deionized water in step A1 is 1g:100mL:30mL:1mL:5mL, and the concentration of sodium hydroxide aqueous solution is 5mol / L.

[0049] The weight ratio of the modified resin, modified filler, and DMF mentioned in step A2 is 10:3:60.

[0050] The modified resin is prepared by the following steps:

[0051] Step B1: Octaphenylcyclotetrasiloxane, methacryloyloxypropylmethyldiethoxysilane, tetramethylsodium hydroxide, 1,3-bis(3-aminopropyl)tetramethyldisiloxane, deionized water and dimethyl sulfoxide are mixed evenly and reacted for 3 hours at a speed of 300 r / min and a temperature of 110℃ to obtain polysiloxane.

[0052] Step B2: Polysiloxane, melamine, 4,4'-diaminodiphenyl ether and N-methylpyrrolidone are mixed evenly, and nitrogen gas is introduced for protection. Under the conditions of 200 r / min and 25°C, the mixture is stirred and pyromellitic anhydride is added. After reacting for 3 h, the temperature is raised to 190°C and reacted for 7 h to obtain polyimide. Polyimide, trichlorosilane, chloroplatinic acid and DMF are mixed evenly, and nitrogen gas is introduced for protection. Under the conditions of 150 r / min and 90°C, the mixture is reacted for 6 h to obtain pretreated polyimide.

[0053] Step B3: Lithium dimethylhydrosilylsiloxane and DMF are mixed and stirred at 200 r / min and 0°C. Trifluoropropylmethylcyclotrisiloxane is added, the temperature is raised to 30°C, and the reaction is carried out for 24 h. Then, pretreated polyimide is added, and the reaction is continued for 1.5 h to obtain modified polyimide. Modified polyimide, 3-methyl-4-vinylbenzylnitrile, chloroplatinic acid and DMF are mixed evenly, nitrogen gas is introduced for protection, and the reaction is carried out at 150 r / min and 90°C for 6 h to obtain modified resin.

[0054] The ratio of octaphenylcyclotetrasiloxane, methacryloxypropylmethyldiethoxysilane, tetramethylsodium hydroxide, 1,3-bis(3-aminopropyl)tetramethyldisiloxane, deionized water and dimethyl sulfoxide in step B1 is 3.8 mol:1 mol:6 mol:4 mol:3 L:10 L.

[0055] In step B2, the molar ratio of polysiloxane, melamine, 4,4'-diaminodiphenyl ether and benzoic anhydride is 3:1:8:12.1, the molar ratio of the double bond on the polyimide to trichlorosilane is 1:1, and the amount of chloroplatinic acid is 1‰ of the mass of trichlorosilane.

[0056] In step B3, the molar ratio of lithium dimethylhydrosilyl alcohol, trifluoropropylmethylcyclotrisiloxane, and the Si-Cl bond on the pretreated polyimide is 1:4:1, the molar ratio of the Si-H bond on the modified polyimide to 3-methyl-4-vinylbenzylnitrile is 1:1, and the amount of chloroplatinic acid is 1‰ of the modifier mass.

[0057] Comparative Example 1: Compared with Example 1, this comparative example uses hexagonal boron nitride instead of the modified filler, while the other steps are the same.

[0058] Comparative Example 2: This comparative example uses styrene instead of 3-methyl-4-vinylbenzylnitrile, but the other steps are the same as in Example 1.

[0059] Comparative Example 3: Compared with Example 1, this comparative example uses hexamethylcyclotrisiloxane instead of trifluoropropylmethylcyclotrisiloxane, and the other steps are the same.

[0060] The insulating coatings prepared in Examples 1-3 and Comparative Examples 1-3 were tested using thermogravimetric analysis at 400°C, 600°C and 800°C to determine their weight loss rate. The results are shown in Table 1 below.

[0061] Table 1

[0062] Example 1 Example 2 Example 3 Example 1 Example 2 Example 3 400℃ 0% 0% 0% 0% 0% 0% 600℃ 5.8% 5.5% 5.3% 8.3% 11.8% 8.6% 800℃ 11.2% 10.9% 10.4% 19.3% 41.7% 23.6%

[0063] As shown in Table 1, this application has excellent high-temperature resistance.

[0064] The above description is merely an example and illustration of the concept of the present invention. Those skilled in the art can make various modifications or additions to the specific embodiments described or use similar methods to replace them, as long as they do not deviate from the concept of the invention or exceed the scope defined in the claims, they should all fall within the protection scope of the present invention.

Claims

1. A method for preparing a high heat-resistant electronic interconnect, characterized in that: Specifically, the steps include the following: Step A1: After mixing hexagonal boron nitride and sodium hydroxide aqueous solution and refluxing, the mixture is washed with hydrochloric acid until neutral. The substrate is dispersed in ethanol, stirred, and 3-cyanopropyltrimethoxysilane and deionized water are added to carry out the reaction to obtain the modified filler. Step A2: Mix the modified resin, modified filler and DMF evenly to obtain an insulating coating. Immerse the copper conductor in the insulating coating. After the dip coating treatment, heat and keep it warm. Finally, assemble the terminals to obtain a high heat-resistant electronic connection wire. The modified resin is prepared by the following steps: Step B1: Mix and react octaphenylcyclotetrasiloxane, methacryloxypropylmethyldiethoxysilane, tetramethylsodium hydroxide, 1,3-bis(3-aminopropyl)tetramethyldisiloxane, deionized water and dimethyl sulfoxide to prepare polysiloxane; Step B2: Polysiloxane, melamine, 4,4'-diaminodiphenyl ether and N-methylpyrrolidone are mixed evenly, nitrogen gas is introduced for protection, and pyromellitic anhydride is added to carry out the reaction to obtain polyimide. Polyimide, trichlorosilane, chloroplatinic acid and DMF are mixed evenly, nitrogen gas is introduced for protection, and the reaction is carried out to obtain pretreated polyimide. Step B3: Lithium dimethylhydrosilyl alcohol and DMF are mixed and stirred, and trifluoropropylmethylcyclotrisiloxane is added. After heating and reacting, pretreated polyimide is added and the reaction is continued to obtain modified polyimide. Modified polyimide, 3-methyl-4-vinylbenzyl nitrile, chloroplatinic acid and DMF are mixed evenly, and nitrogen gas is introduced for protection to carry out the reaction to obtain modified resin.

2. The method for preparing a high heat-resistant electronic interconnect according to claim 1, characterized in that: The ratio of hexagonal boron nitride, sodium hydroxide aqueous solution, ethanol, 3-cyanopropyltrimethoxysilane and deionized water in step A1 is 1g:100mL:30mL:1mL:5mL.

3. The method for preparing a high heat-resistant electronic interconnect according to claim 1, characterized in that: The weight ratio of the modified resin, modified filler, and DMF mentioned in step A2 is 10:3:

60.

4. The method for preparing a high heat-resistant electronic interconnect according to claim 1, characterized in that: The ratio of octaphenylcyclotetrasiloxane, methacryloxypropylmethyldiethoxysilane, tetramethylsodium hydroxide, 1,3-bis(3-aminopropyl)tetramethyldisiloxane, deionized water and dimethyl sulfoxide in step B1 is 3.8 mol: 1 mol: 6 mol: 4 mol: 3 L: 10 L.

5. The method for preparing a high heat-resistant electronic interconnect according to claim 1, characterized in that: The molar ratio of polysiloxane, melamine, 4,4'-diaminodiphenyl ether and phenyltetracarboxylic anhydride in step B2 is 3:1:8:12.1, and the molar ratio of the double bond on the polyimide to trichlorosilane is 1:

1.

6. The method for preparing a high heat-resistant electronic interconnect according to claim 1, characterized in that: In step B3, the molar ratio of lithium dimethylhydrosilyl alcohol, trifluoropropylmethylcyclotrisiloxane, and the Si-Cl bond on the pretreated polyimide is 1:4:1, and the molar ratio of the Si-H bond on the modified polyimide and 3-methyl-4-vinylbenzylnitrile is 1:

1.

7. A high heat-resistant electronic connection wire, characterized in that: It is prepared according to any one of the preparation methods described in claims 1-6.