Cleaning and regeneration process of aluminum nitride crucible for MicroOLED evaporation source

Abstract

The invention relates to the technical field of precise cleaning and regeneration, and discloses an aluminum nitride crucible cleaning and regeneration process for a MicroOLED evaporation source, which comprises the steps of organic soaking, primary pure water soaking, physical film removal, water washing, primary drying, high-temperature baking, acid pickling, secondary pure water soaking, ultrasonic cleaning, secondary drying, detection, drying, cooling and vacuum packaging. According to the cleaning and regeneration technology for the aluminum nitride crucible for the MicroOLED evaporation source, multiple cleaning modes are combined, organic matter on the surface and in the aluminum nitride crucible can be effectively dissolved, compared with traditional soaking with a single organic solvent, the removal effect on stubborn stains is better, organic residues and permeation residues are avoided, and the service life of the aluminum nitride crucible is prolonged. The crucible can be safely mixed for use in subsequent use through the thorough cleaning process, cross contamination is effectively avoided, product flaws caused by incomplete cleaning of the crucible are reduced, the product yield is further improved, the high product yield means lower production cost and higher market competitiveness, and remarkable economic benefits are brought to enterprises.

Description

Technical Field

[0001] The present invention relates to the field of precision cleaning and regeneration technology, and in particular to a cleaning and regeneration process for an aluminum nitride crucible for a MicroOLED evaporation source. Background Art

[0002] With the development of science and technology, the development of the display field has also been ever-changing. From the initial TFT-LCD to OLED, and now to MicroOLED, MicroOLED micro-display devices have the characteristics of self-luminescence, thin thickness, light weight, large viewing angle, short response time, high luminous efficiency, etc., and are easy to carry and have low power consumption. As the market application continues to expand, the attention to MicroOLED micro-display products is increasing. The organic light-emitting material used in the Micro-OLED evaporation process requires the use of AIN crucible as a carrier. After use, a dense layer of crystals will form on the bottom of the crucible, which needs to be soaked and cleaned to achieve reuse of the crucible.

[0003] Currently, the traditional method for cleaning crucibles is to soak them in a single organic solvent. However, this method has many disadvantages, including incomplete film removal and organic or permeate residues on the bottom. This not only makes the crucibles unable to be mixed in subsequent uses, easily causing cross-contamination, but also reduces product yield, thereby increasing the client's production costs.

[0004] In view of this, in-depth research was conducted on the above problems, and a cleaning and regeneration process for aluminum nitride crucibles used for MicroOLED evaporation sources was proposed. Summary of the Invention

[0005] The purpose of the present invention is to provide a cleaning and regeneration process for aluminum nitride crucibles used for MicroOLED evaporation sources, so as to solve the problems raised in the above background technology that the existing crucible cleaning process does not remove the film thoroughly, is prone to cross contamination, is not conducive to ensuring product yield, and is costly.

[0006] To achieve the above objectives, the present invention provides the following technical solution: a cleaning and regeneration process for an aluminum nitride crucible for a MicroOLED evaporation source, comprising the following steps:

[0007] Step 1: Organic soaking: soak the aluminum nitride crucible with an organic solvent;

[0008] Step 2: Soak in pure water once: Take out the aluminum nitride crucible after organic soaking and put it into a pure water tank for overflow soaking;

[0009] Step 3: Physical film removal: Take out the aluminum nitride crucible after soaking in pure water and use tools to remove most of the residual film;

[0010] Step 4: Water washing: Use pure water to rinse the surface and interior of the aluminum nitride crucible after film removal;

[0011] Step 5: Primary drying: Take out the washed aluminum nitride crucible, use dried compressed air to dry the aluminum nitride crucible and then dry it;

[0012] Step 6: High temperature baking: baking the pre-dried aluminum nitride crucible at high temperature;

[0013] Step 7: Pickling: Soak the aluminum nitride crucible after high-temperature baking in an acid mixture;

[0014] Step 8: Secondary pure water soaking: After the pickled aluminum nitride crucible is fished out, it is placed in a pure water tank for overflow soaking again;

[0015] Step 9: Ultrasonic cleaning: Take out the aluminum nitride crucible after soaking in pure water again and put it into an ultrasonic cleaning tank for vibration cleaning;

[0016] Step 10, secondary drying: Take out the aluminum nitride crucible after ultrasonic cleaning, use dried compressed air to blow dry the aluminum nitride crucible again and then dry it;

[0017] Step 11: Detection: Use an ultraviolet lamp to perform fluorescence detection on the aluminum nitride crucible after secondary drying;

[0018] Step 12: Drying: Place the aluminum nitride crucible after testing in a clean room for drying;

[0019] Step 13: Cooling: Allow the aluminum nitride crucible dried in the clean room to cool naturally to room temperature in the clean room;

[0020] Step 14: Vacuum packaging: vacuum package the cooled aluminum nitride crucible and label it.

[0021] The above technical solution is adopted to facilitate the thorough removal of organic matter, impurities and residual film remaining on the surface and inside of the aluminum nitride crucible, restore the cleanliness and performance of the crucible, realize reuse, and reduce production costs.

[0022] As a preferred technical solution of the present invention, the organic solvent in step 1 is one or more of IPA, alcohol, acetone and NMP, the immersion temperature of the aluminum nitride crucible is 50-60°C, and the immersion time is 2-8 hours.

[0023] The above technical solution is adopted to effectively dissolve various organic pollutants attached to the surface of the aluminum nitride crucible, and at the same time, the dissolution efficiency and crucible quality are guaranteed through temperature and time.

[0024] As a preferred technical solution of the present invention, the water used in steps 1 to 14 is ultrapure water with a resistivity greater than 17 mΩ.CM.

[0025] The above technical solution is adopted to prevent the impurities contained in ordinary water from secondary contamination of the aluminum nitride crucible during the cleaning process, thereby ensuring the purity of the cleaning process and improving the cleaning quality.

[0026] As a preferred technical solution of the present invention, the aluminum nitride crucible is manually removed in step three, and the tool used is a flat-mouth tool made of PP material.

[0027] The above technical solution is used to facilitate the accurate removal of most of the residual film on the surface of the aluminum nitride crucible. The PP material is relatively soft in texture, which can avoid scratching the crucible surface during the film removal process and ensure the integrity of the crucible.

[0028] As a preferred technical solution of the present invention, the drying in steps five, ten and twelve all uses a high-temperature oven with power parameters of AC380V / 60Hz, a temperature control of 60-500°C, a rated power of 28KW, and a working size of 4M*1.5M*1.5M.

[0029] The above technical solution makes it easy to flexibly adjust the temperature according to the drying requirements at different stages, achieve a fast and uniform drying effect, ensure complete removal of moisture inside and on the surface of the crucible, and prevent residual moisture from affecting subsequent processes and crucible performance.

[0030] As a preferred technical solution of the present invention, a stepped heating oven is used for baking in step six, and the temperature is controlled at 30-1100°C.

[0031] The above technical solution makes it easy to slowly and steadily remove trace impurities and moisture remaining inside the crucible, avoiding damage to the crucible caused by excessive thermal stress due to sudden temperature rise. At the same time, it effectively decomposes stubborn pollutants and improves the cleanliness of the crucible.

[0032] As a preferred technical solution of the present invention, the acid mixture in step seven is one or more of hydrofluoric acid, nitric acid, and hydrochloric acid.

[0033] The above technical solution facilitates the targeted dissolution and removal of impurities such as metal oxides and insoluble inorganic substances remaining on the surface of the aluminum nitride crucible, achieves the best pickling effect through the combination of different acids, and further improves the cleanliness of the crucible.

[0034] As a preferred technical solution of the present invention, the output voltage of the ultrasonic cleaning machine in step nine is 380V, the output current is 3-6A, and the cleaning tank is filled with newly added ultrapure water.

[0035] The above technical solution makes it easy to utilize the cavitation effect of ultrasound to thoroughly clean the residual impurities on the surface and in the tiny pores of the aluminum nitride crucible. The newly added ultrapure water ensures that there is no secondary pollution during the cleaning process, thereby improving the cleaning accuracy.

[0036] As a preferred technical solution of the present invention, the wavelength of the ultraviolet lamp in step 11 is 375nm.

[0037] The above technical solution makes it easy to accurately detect whether there is any fluorescent substance residue on the surface of the aluminum nitride crucible. This wavelength can effectively excite potential pollutants to produce fluorescence, ensuring the sensitivity and accuracy of the detection and timely detection of unqualified products.

[0038] As a preferred technical solution of the present invention, the material of the packaging bag used in step fourteen is PE, and the packaging method is double-layer vacuum packaging.

[0039] The above technical solution is used to isolate the outside air, moisture and dust, preventing the cleaned and regenerated aluminum nitride crucible from being contaminated during storage and transportation. At the same time, the PE material has good chemical stability and flexibility, protecting the crucible from physical damage.

[0040] Compared with the prior art, the beneficial effects of the present invention are: the cleaning and regeneration process of the aluminum nitride crucible for the MicroOLED evaporation source adopts a combination of multiple cleaning methods, which can effectively dissolve organic matter on the surface and inside the aluminum nitride crucible. Compared with the traditional single organic solvent immersion, it has a better effect on removing stubborn stains, avoiding organic residues and penetration residues. The thorough cleaning process allows the crucible to be safely mixed in subsequent use, effectively avoiding cross-contamination, reducing product defects caused by incomplete crucible cleaning, and thus improving product yield. A higher product yield means lower production costs and higher market competitiveness, bringing significant economic benefits to the enterprise. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 It is a flow chart of the present invention. DETAILED DESCRIPTION

[0042] The following will provide a clear and complete description of the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0043] Example 1

[0044] See also Figure 1 The technical solution of the present invention is: a cleaning and regeneration process for an aluminum nitride crucible for a MicroOLED evaporation source, comprising the following steps:

[0045] Step 1: Organic immersion: Use an organic solvent mixed with IPA and alcohol in a mass ratio of 1:1, immerse the aluminum nitride crucible in the organic solvent, and immerse it for 8 hours at a temperature of 50°C. Observe whether the organic film inside the crucible is mostly removed. If not, continue immersing.

[0046] Step 2: Soak in pure water once: Take out the aluminum nitride crucible after organic soaking and put it into a pure water tank for overflow soaking for more than 1 hour;

[0047] Step 3: Physical film removal: Take out the aluminum nitride crucible after soaking in pure water, and manually use a flat-mouth tool made of PP material to remove most of the residual film;

[0048] Step 4: Water washing: Use ultrapure water with a resistivity of >17mΩ.CM to rinse the surface and interior of the aluminum nitride crucible after film removal;

[0049] Step 5: Primary drying: Take out the washed aluminum nitride crucible, use compressed air filtered through a 0.5 μm filter to dry the aluminum nitride crucible, and then put it into a high-temperature oven and dry it at 60°C;

[0050] Step 6: High-temperature baking: Place the pre-dried aluminum nitride crucible into a stepped heating oven, keep the temperature constant for 1 hour each time the temperature rises by 100°C, and keep the temperature constant for 4 hours when the temperature reaches 1000°C.

[0051] Step 7: Pickling: Soak the aluminum nitride crucible after high-temperature baking in a mixture of hydrofluoric acid, hydrochloric acid and water in a mass ratio of 3:3:4;

[0052] Step 8: Secondary pure water soaking: After the pickled aluminum nitride crucible is fished out, it is placed in a pure water tank and allowed to overflow and soak for more than 1 hour.

[0053] Step 9, ultrasonic cleaning: Take out the aluminum nitride crucible after being soaked in pure water again, place it in an ultrasonic cleaning tank with an output voltage of 380V and an output current of 3A and vibrate and clean it for 10 minutes;

[0054] Step 10, secondary drying: Take out the aluminum nitride crucible after ultrasonic cleaning, use compressed air filtered through a 0.5μm filter to dry the aluminum nitride crucible again, and then put it into a high-temperature oven and dry it at 60°C;

[0055] Step 11: Detection: Use an ultraviolet lamp with a wavelength of 375nm to perform fluorescence detection on the aluminum nitride crucible after secondary drying;

[0056] Step 12: Drying: Place the aluminum nitride crucible after testing in a Class 100 clean room used in the semiconductor industry and dry it in a high-temperature oven at 60°C.

[0057] Step 13: Cooling: Allow the aluminum nitride crucible dried in the clean room to cool naturally to room temperature in the clean room;

[0058] Step 14: Vacuum packaging: The cooled aluminum nitride crucible is double-vacuum packaged in a PE packaging bag and labeled.

[0059] Example 2

[0060] See also Figure 1 The technical solution of the present invention is: a cleaning and regeneration process for an aluminum nitride crucible for a MicroOLED evaporation source, comprising the following steps:

[0061] Step 1: Organic immersion: Use an organic solvent mixed with IPA and acetone in a mass ratio of 1:1, immerse the aluminum nitride crucible in the organic solvent, and immerse it for 6 hours at a temperature of 53°C. Observe whether the organic film inside the crucible is mostly removed. If not, continue immersing.

[0062] Step 2: Soak in pure water once: Take out the aluminum nitride crucible after organic soaking and put it into a pure water tank for overflow soaking for more than 1 hour;

[0063] Step 3: Physical film removal: Take out the aluminum nitride crucible after soaking in pure water, and manually use a flat-mouth tool made of PP material to remove most of the residual film;

[0064] Step 4: Water washing: Use ultrapure water with a resistivity of >17mΩ.CM to rinse the surface and interior of the aluminum nitride crucible after film removal;

[0065] Step 5: Primary drying: Take out the washed aluminum nitride crucible, use compressed air filtered through a 0.5 μm filter to dry the aluminum nitride crucible, and then put it into a high-temperature oven and dry it at 90°C;

[0066] Step 6: High-temperature baking: Place the pre-dried aluminum nitride crucible into a stepped heating oven, keep the temperature constant for 1 hour each time the temperature rises by 100°C, and keep the temperature constant for 4 hours when the temperature reaches 1000°C.

[0067] Step 7: Pickling: Soak the aluminum nitride crucible after high-temperature baking in a mixture of hydrofluoric acid, nitric acid and water in a mass ratio of 3:3:4;

[0068] Step 8: Secondary pure water soaking: After the pickled aluminum nitride crucible is fished out, it is placed in a pure water tank and allowed to overflow and soak for more than 1 hour.

[0069] Step 9, ultrasonic cleaning: Take out the aluminum nitride crucible after being soaked in pure water again, place it in an ultrasonic cleaning tank with an output voltage of 380V and an output current of 4A and vibrate and clean it for 10 minutes;

[0070] Step 10, secondary drying: Take out the aluminum nitride crucible after ultrasonic cleaning, use compressed air filtered through a 0.5μm filter to dry the aluminum nitride crucible again, and then put it into a high-temperature oven and dry it at 90°C;

[0071] Step 11: Detection: Use an ultraviolet lamp with a wavelength of 375nm to perform fluorescence detection on the aluminum nitride crucible after secondary drying;

[0072] Step 12: Drying: Place the aluminum nitride crucible after testing in a Class 100 clean room used in the semiconductor industry and dry it in a high-temperature oven at 90°C.

[0073] Step 13: Cooling: Allow the aluminum nitride crucible dried in the clean room to cool naturally to room temperature in the clean room;

[0074] Step 14: Vacuum packaging: The cooled aluminum nitride crucible is double-vacuum packaged in a PE packaging bag and labeled.

[0075] Example 3

[0076] See also Figure 1 The technical solution of the present invention is: a cleaning and regeneration process for an aluminum nitride crucible for a MicroOLED evaporation source, comprising the following steps:

[0077] Step 1: Organic immersion: Use an organic solvent mixed with alcohol and acetone in a mass ratio of 1:1, immerse the aluminum nitride crucible in the organic solvent, and immerse it for 4 hours at a temperature of 55°C. Observe whether the organic film inside the crucible is mostly removed. If not, continue immersing.

[0078] Step 2: Soak in pure water once: Take out the aluminum nitride crucible after organic soaking and put it into a pure water tank for overflow soaking for more than 1 hour;

[0079] Step 3: Physical film removal: Take out the aluminum nitride crucible after soaking in pure water, and manually use a flat-mouth tool made of PP material to remove most of the residual film;

[0080] Step 4: Water washing: Use ultrapure water with a resistivity of >17mΩ.CM to rinse the surface and interior of the aluminum nitride crucible after film removal;

[0081] Step 5: Primary drying: Take out the washed aluminum nitride crucible, use compressed air filtered through a 0.5 μm filter to dry the aluminum nitride crucible, and then place it in a high-temperature oven and dry it at 200°C.

[0082] Step 6: High-temperature baking: Place the pre-dried aluminum nitride crucible into a stepped heating oven, keep the temperature constant for 1 hour each time the temperature rises by 100°C, and keep the temperature constant for 4 hours when the temperature reaches 1000°C.

[0083] Step 7: Pickling: Soak the aluminum nitride crucible after high-temperature baking in a mixture of hydrofluoric acid, hydrochloric acid and water in a mass ratio of 3:3:5;

[0084] Step 8: Secondary pure water soaking: After the pickled aluminum nitride crucible is fished out, it is placed in a pure water tank and allowed to overflow and soak for more than 1 hour.

[0085] Step 9, ultrasonic cleaning: Take out the aluminum nitride crucible after soaking in pure water again, place it in an ultrasonic cleaning tank with an output voltage of 380V and an output current of 5A and vibrate and clean it for 10 minutes;

[0086] Step 10, secondary drying: Take out the aluminum nitride crucible after ultrasonic cleaning, use compressed air filtered through a 0.5 μm filter to dry the aluminum nitride crucible again, and then put it into a high-temperature oven and dry it at 220°C;

[0087] Step 11: Detection: Use an ultraviolet lamp with a wavelength of 375nm to perform fluorescence detection on the aluminum nitride crucible after secondary drying;

[0088] Step 12: Drying: Place the aluminum nitride crucible after testing in a Class 100 clean room used in the semiconductor industry and dry it in a high-temperature oven at 250°C.

[0089] Step 13: Cooling: Allow the aluminum nitride crucible dried in the clean room to cool naturally to room temperature in the clean room;

[0090] Step 14: Vacuum packaging: The cooled aluminum nitride crucible is double-vacuum packaged in a PE packaging bag and labeled.

[0091] Example 4

[0092] See also Figure 1 The technical solution of the present invention is: a cleaning and regeneration process for an aluminum nitride crucible for a MicroOLED evaporation source, comprising the following steps:

[0093] Step 1: Organic immersion: Use an organic solvent mixed with acetone and NMP in a mass ratio of 1:1, immerse the aluminum nitride crucible in the organic solvent, and immerse it for 2 hours at a temperature of 60°C. Observe whether the organic film inside the crucible is mostly removed. If not, continue immersing.

[0094] Step 2: Soak in pure water once: Take out the aluminum nitride crucible after organic soaking and put it into a pure water tank for overflow soaking for more than 1 hour;

[0095] Step 3: Physical film removal: Take out the aluminum nitride crucible after soaking in pure water, and manually use a flat-mouth tool made of PP material to remove most of the residual film;

[0096] Step 4: Water washing: Use ultrapure water with a resistivity of >17mΩ.CM to rinse the surface and interior of the aluminum nitride crucible after film removal;

[0097] Step 5: Primary drying: Take out the washed aluminum nitride crucible, use compressed air filtered through a 0.5 μm filter to dry the aluminum nitride crucible, and then place it in a high-temperature oven and dry it at 500°C;

[0098] Step 6: High-temperature baking: Place the pre-dried aluminum nitride crucible into a stepped heating oven, keep the temperature constant for 1 hour each time the temperature rises by 100°C, and keep the temperature constant for 4 hours when the temperature reaches 1000°C.

[0099] Step 7: Pickling: Soak the aluminum nitride crucible after high-temperature baking in a mixture of nitric acid, hydrochloric acid and water in a mass ratio of 3:3:5;

[0100] Step 8: Secondary pure water soaking: After the pickled aluminum nitride crucible is fished out, it is placed in a pure water tank and allowed to overflow and soak for more than 1 hour.

[0101] Step 9, ultrasonic cleaning: Take out the aluminum nitride crucible after being soaked in pure water again, place it in an ultrasonic cleaning tank with an output voltage of 380V and an output current of 6A and vibrate and clean it for 10 minutes;

[0102] Step 10, secondary drying: Take out the aluminum nitride crucible after ultrasonic cleaning, use compressed air filtered through a 0.5 μm filter to dry the aluminum nitride crucible again, and then put it into a high-temperature oven and dry it at 500°C;

[0103] Step 11: Detection: Use an ultraviolet lamp with a wavelength of 375nm to perform fluorescence detection on the aluminum nitride crucible after secondary drying;

[0104] Step 12: Drying: Place the aluminum nitride crucible after testing in a Class 100 clean room used in the semiconductor industry and dry it in a high-temperature oven at 500°C.

[0105] Step 13: Cooling: Allow the aluminum nitride crucible dried in the clean room to cool naturally to room temperature in the clean room;

[0106] Step 14: Vacuum packaging: The cooled aluminum nitride crucible is double-vacuum packaged in a PE packaging bag and labeled.

[0107] The crucibles cleaned by the cleaning process of the present invention are compared with the crucibles cleaned by the traditional method from multiple perspectives, as shown in the following table:

[0108] Comparison Project Example 1 Example 2 Example 3 Example 4 Traditional cleaning process Organic residue rate (%) 1.0 1.2 0.8 1.3 18 Permeation residual rate (%) 0.5 0.8 0.6 0.9 10 Cross contamination rate (%) 2.0 2.5 3.0 3.5 32 Product yield (%) 96.0 95.0 96.0 93.0 62

[0109] It can be clearly seen from the above table data that the cleaning process of the present invention has obvious advantages over the traditional process. In terms of organic residue rate and permeation residue rate, the organic residue rates of Examples 1 to 4 are 1.0%, 1.2%, 0.8%, and 1.5%, respectively, and the permeation residue rates are 0.5%, 0.8%, 0.6%, and 0.9%, respectively. The organic residue rate of the traditional process is as high as 18%, and the permeation residue rate is 10%. This shows that the cleaning process of the present invention can more effectively dissolve and remove organic matter on the surface and inside of the aluminum nitride crucible, avoid organic residue and permeation residue, and greatly improve the cleanliness of the crucible;

[0110] In terms of cross-contamination rate, the cross-contamination rates of the crucibles mixed in Examples 1 to 4 were 2.0%, 2.5%, 3.0%, and 3.5%, respectively, while the conventional process was 32%. This indicates that the thorough cleaning of the present invention allows the crucibles to be safely mixed in subsequent use, effectively reducing the risk of cross-contamination and ensuring the stability of the production process.

[0111] In terms of product yield, the product yields of Examples 1 to 4 reached 96.0%, 95.0%, 96%, and 93.0%, respectively. In comparison, the product yield of the traditional process was only 62%. The cleaning process of the present invention greatly reduced product defects caused by incomplete crucible cleaning, significantly improved product yield, and thus reduced production costs and enhanced the company's market competitiveness.

[0112] The contents not described in detail in this specification belong to the prior art known to those skilled in the art.

[0113] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the appended claims and their equivalents.

Claims

1. A cleaning and regeneration process for aluminum nitride crucibles used for MicroOLED evaporation sources, characterized in that: The following steps are involved: Step 1: Organic soaking: soak the aluminum nitride crucible with an organic solvent; Step 2: Soak in pure water once: Take out the aluminum nitride crucible after organic soaking and put it into a pure water tank for overflow soaking; Step 3: Physical film removal: Take out the aluminum nitride crucible after soaking in pure water and use tools to remove most of the residual film; Step 4: Water washing: Use pure water to rinse the surface and interior of the aluminum nitride crucible after film removal; Step 5: Primary drying: Take out the washed aluminum nitride crucible, use dried compressed air to dry the aluminum nitride crucible and then dry it; Step 6: High temperature baking: baking the pre-dried aluminum nitride crucible at high temperature; Step 7: Pickling: Soak the aluminum nitride crucible after high-temperature baking in an acid mixture; Step 8: Secondary pure water soaking: After the pickled aluminum nitride crucible is fished out, it is placed in a pure water tank for overflow soaking again; Step 9: Ultrasonic cleaning: Take out the aluminum nitride crucible after soaking in pure water again and put it into an ultrasonic cleaning tank for vibration cleaning; Step 10, secondary drying: Take out the aluminum nitride crucible after ultrasonic cleaning, use dried compressed air to blow dry the aluminum nitride crucible again and then dry it; Step 11: Detection: Use an ultraviolet lamp to perform fluorescence detection on the aluminum nitride crucible after secondary drying; Step 12: Drying: Place the aluminum nitride crucible after testing in a clean room for drying; Step 13: Cooling: Allow the aluminum nitride crucible dried in the clean room to cool naturally to room temperature in the clean room; Step 14: Vacuum packaging: vacuum package the cooled aluminum nitride crucible and label it.

2. The cleaning and regeneration process of an aluminum nitride crucible for a MicroOLED evaporation source according to claim 1, characterized in that: In the step 1, the organic solvent is one or more of IPA, alcohol, acetone and NMP, and the immersion temperature of the aluminum nitride crucible is 50-60° C. and the immersion time is 2-8 hours.

3. The cleaning and regeneration process of an aluminum nitride crucible for a MicroOLED evaporation source according to claim 1, characterized in that: The water used in steps 1 to 14 is ultrapure water with a resistivity greater than 17 mΩ·CM.

4. The cleaning and regeneration process of an aluminum nitride crucible for a MicroOLED evaporation source according to claim 1, characterized in that: In the step 3, the aluminum nitride crucible is manually de-filmed using a flat-mouth tool made of PP material.

5. The cleaning and regeneration process of an aluminum nitride crucible for a MicroOLED evaporation source according to claim 1, characterized in that: During the drying in steps 5, 10 and 12, a high-temperature oven with power supply parameters of AC380V / 60Hz, a temperature control range of 60-500°C, a rated power of 28KW, and a working size of 4M*1.5M*1.5M is used.

6. The cleaning and regeneration process for an aluminum nitride crucible for a MicroOLED evaporation source according to claim 1, characterized in that: During the baking in step 6, a stepped heating oven is used and the temperature is controlled at 30-1100°C.

7. The cleaning and regeneration process for an aluminum nitride crucible for a MicroOLED evaporation source according to claim 1, characterized in that: In step seven, the acid mixture is one or more of hydrofluoric acid, nitric acid and hydrochloric acid.

8. The cleaning and regeneration process for an aluminum nitride crucible for a MicroOLED evaporation source according to claim 1, characterized in that: In step nine, the output voltage of the ultrasonic cleaning machine is 380V, the output current is 3-6A, and the cleaning tank is filled with newly added ultrapure water.

9. The cleaning and regeneration process for an aluminum nitride crucible for a MicroOLED evaporation source according to claim 1, characterized in that: The wavelength of the ultraviolet lamp in the step 11 is 375 nm.

10. The cleaning and regeneration process of an aluminum nitride crucible for a MicroOLED evaporation source according to claim 1, characterized in that: The material of the packaging bag used in step fourteen is PE, and the packaging method is double-layer vacuum packaging.

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