Wafer surface type detection and compensation method, system, device, medium and program

Abstract

The application discloses a wafer surface type detection and compensation method, system, device, medium and program, and the method comprises the following steps: scanning a wafer to obtain a plurality of groups of original data; filtering all the original data to obtain scanning strip data; exposing the wafer and dynamically compensating the scanning strip data of the exposure position by a preset compensation value to obtain exposure strip data; equally spacing sampling the exposure strip data; assigning the exposure data obtained by the equally spacing sampling to the preset compensation value to compensate the height of the wafer in the wafer exposure step, and detecting the wafer surface type by using the equally spacing sampled exposure strip data. The technical scheme provided by the application can solve the technical problem that the wafer surface type detection in the prior art has a large error.

Description

Technical Field

[0001] This invention relates to the field of precision measurement technology, and in particular to a method, system, device, medium, and program for detecting and compensating for wafer surface shape. Background Technology

[0002] Existing high-precision exposure / lithography machines reduce the depth of focus of the lens in order to achieve higher resolution. According to SEMI specifications, the wafer surface shape has a deviation of 20µm, which is far beyond the range of the lens depth of focus, resulting in a large error in the detection of the wafer surface shape. Summary of the Invention

[0003] This invention provides a method, system, apparatus, medium, and program for detecting and compensating for wafer surface features, aiming to effectively solve the technical problem of large errors in the detection of wafer surface features in the prior art.

[0004] According to a first aspect of the present invention, the present invention provides a method for detecting and compensating wafer surface features, comprising: scanning a wafer to obtain multiple sets of raw data; filtering all the raw data to obtain scan strip data; exposing the wafer and dynamically compensating the scan strip data at the exposed positions with a preset compensation value to obtain exposure strip data; sampling the exposure strip data at equal intervals; assigning the preset compensation value to the exposure data obtained by the equal interval sampling to compensate for the height of the wafer during the step of exposing the wafer, and detecting the wafer using the exposure strip data obtained by the equal interval sampling.

[0005] Further, the step of filtering all the original data to obtain scan strip data includes: performing a moving average on all the original scan data to obtain multiple sets of moving data, wherein each set of original data corresponds to at least one set of moving data; calculating the difference between the corresponding original data and the moving data; removing the moving data whose difference is greater than a preset threshold, and filling the positions of the removed moving data with data to obtain data with coarse points removed; and performing a moving average on the data with coarse points removed to obtain scan strip data.

[0006] Furthermore, the step of filling the position of the removed sliding data includes: obtaining the undisturbed sliding data closest to the position of the removed sliding data, and filling the position of the removed sliding data with the undisturbed sliding data as filling data.

[0007] Further, the workpiece stage carrying the wafer is moved to bring the wafer under the exposure lens and a mark is statically exposed; the workpiece stage is moved again and the light spot is focused on the center of the mark using a vertical sensor; the wafer is attached to the workpiece stage, and the workpiece stage is moved while the vertical sensor is used to scan the wafer.

[0008] Furthermore, the step of moving the workpiece stage and scanning the wafer using the vertical sensor includes: moving the workpiece stage to move the wafer along the Y direction until the vertical sensor scans one strip of the wafer to obtain a set of raw data, and then moving it a preset distance in the X direction to scan the next strip until the scanning is completed and multiple sets of raw data are obtained.

[0009] Further, the step of dynamically compensating the scan strip data of the exposure position with a preset compensation value to obtain the exposure strip data includes: selecting the coordinates of a preset number of neighboring points of the scan strip data corresponding to the coordinates of the exposure position; performing linear interpolation in the X direction on the coordinates of the exposure position using the coordinates of the preset number of points; performing linear interpolation in the Y direction on the coordinates of the exposure position using the lock table of the preset number of points to obtain the exposure data of the exposure position; and calculating the exposure data for each exposure position to obtain the exposure strip data.

[0010] Furthermore, the step of sampling the exposure strip data at equal intervals includes: obtaining the exposure speed and the wafer's movement frequency in height during wafer exposure; calculating the focal plane compensation spacing using the exposure speed and the movement frequency; and sampling the exposure strip data according to the focal plane compensation spacing.

[0011] Further, the step of assigning the preset compensation value to the exposure data obtained by the equally spaced sampling includes: after statically exposing a mark, taking the position of the mark as the optimal focal plane; calculating the compensation height by calculating the height of the optimal focal plane and the height of each exposure position in the exposure strip data, and assigning the compensation height to the preset compensation value to compensate for the height of the wafer during the step of exposing the wafer.

[0012] According to a second aspect of the present invention, the present invention also provides a wafer surface pattern detection and compensation system, comprising: a scanning module for scanning a wafer to obtain multiple sets of raw data; a filtering module for filtering all the raw data to obtain scan strip data; an exposure module for exposing the wafer and dynamically compensating the scan strip data at the exposure positions with a preset compensation value to obtain exposure strip data; a sampling module for sampling the exposure strip data at equal intervals; and a detection module for assigning the preset compensation value to the exposure data obtained by the equal interval sampling to compensate for the height of the wafer during the step of exposing the wafer, and detecting the wafer using the exposure strip data obtained by the equal interval sampling.

[0013] According to a third aspect of the present invention, the present invention also provides an electronic device, comprising: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the computer program, it implements the wafer surface detection and compensation method described in any one of the above descriptions.

[0014] According to a fourth aspect of the present invention, the present invention also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the wafer surface detection and compensation method described in any one of the above claims.

[0015] According to another aspect of the present invention, the present invention also provides a computer program product comprising a program for performing the wafer surface detection and compensation method according to any one of the claims.

[0016] Through one or more embodiments of the above embodiments of the present invention, at least the following technical effects can be achieved:

[0017] In the technical solution disclosed in this invention, not only can the original data of wafer scanning be filtered to make the scanned data more accurate, but the filtered scan strip data can also be dynamically compensated during exposure, thereby further improving the accuracy of wafer surface inspection. Attached Figure Description

[0018] The technical solution and other beneficial effects of the present invention will become apparent from the following detailed description of specific embodiments of the invention, in conjunction with the accompanying drawings.

[0019] Figure 1 A flowchart illustrating the wafer surface pattern detection and compensation method provided in an embodiment of the present invention;

[0020] Figure 2This is a schematic diagram illustrating the horizontal positional relationship between the calibration vertical sensor and the exposure lens in the wafer surface detection and compensation method provided in this embodiment of the invention.

[0021] Figure 3 A schematic diagram of a vertical sensor scanning a wafer surface for a wafer surface detection and compensation method provided in an embodiment of the present invention;

[0022] Figure 4 A schematic diagram of moving average of the original data of the scanning strip in the wafer surface detection and compensation method provided in the embodiments of the present invention;

[0023] Figure 5 This is a schematic diagram of linear interpolation of the scanning strip in the wafer surface detection and compensation method provided in the embodiments of the present invention;

[0024] Figure 6 This is a schematic diagram illustrating a two-dimensional interpolation of an exposure strip based on a scanning strip, as provided in an embodiment of the present invention for a wafer surface detection and compensation method.

[0025] Figure 7 This is a framework diagram of the wafer surface detection and compensation system according to an embodiment of the present invention;

[0026] Figure 8 This is a schematic block diagram of the electronic device according to an embodiment of the present invention. Detailed Implementation

[0027] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0028] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the term "and / or" in this document is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Furthermore, the character " / " in this document, unless otherwise specified, generally indicates that the preceding and following related objects have an "or" relationship.

[0029] Existing high-precision exposure / lithography machines reduce the depth of focus of the lens in order to achieve higher resolution. According to SEMI specifications, the wafer surface shape has a deviation of 20µm, which is far beyond the range of the lens depth of focus, resulting in a large error in the detection of the wafer surface shape.

[0030] To reduce the detection error of wafer surface shape, existing technologies use compensation methods, step projection methods, field-by-field imaging, and other methods.

[0031] The compensation method is a one-dimensional compensation with a fixed compensation value. However, in wafer surface inspection, it's necessary to inspect the entire wafer plane. One-dimensional compensation cannot represent the data of the entire wafer surface, thus offering limited improvement in accuracy.

[0032] Although the step projection method is a comprehensive inspection method, it compensates for exposure individually, which makes it relatively inefficient for wafer surface inspection given the large number of exposure positions.

[0033] The field-by-field shooting method requires shooting several times, and its efficiency for wafer surface inspection is also relatively low.

[0034] This application provides a method, system, apparatus, medium, and program for detecting and compensating wafer surface features, which can perform comprehensive wafer inspection and has high inspection efficiency while improving inspection accuracy.

[0035] Figure 1 The figure shown illustrates a wafer surface pattern detection and compensation method provided in an embodiment of the present invention, comprising:

[0036] S101. Scan the wafer to obtain multiple sets of raw data;

[0037] S102. Filter all the raw data to obtain scan strip data;

[0038] S103. Expose the wafer and dynamically compensate the scan strip data of the exposed position with a preset compensation value to obtain the exposure strip data.

[0039] S104. Perform equal-interval sampling on the exposure strip data;

[0040] S105. Assign a preset compensation value to the exposure data obtained by equal-interval sampling to compensate for the height of the wafer during the exposure step, and use the exposure strip data obtained by equal-interval sampling to perform surface detection on the wafer.

[0041] In step S101, when scanning the wafer, a vertical sensor is used for scanning. The wafer is on the workpiece stage, and the vertical sensor scans the wafer along a line in the first direction. After scanning one line, the position of the wafer is moved in the second direction, and then the wafer is scanned along the first direction again. Each time a line is scanned, a set of raw data for the scan strip is generated. After the wafer is scanned, multiple sets of raw data for the scan strip are generated. It should be noted that the first direction is perpendicular to the second direction. This method of scanning the wafer makes the scanning efficiency of the wafer higher.

[0042] In step S102, the purpose of filtering is to improve the accuracy of the data.

[0043] In step S103, the wafer is exposed using an exposure lens. When compensating for the scanned strip data, the data in the third direction is compensated, and the first direction, the second direction, and the third direction are perpendicular to each other. For example, the first direction and the second direction are the length direction and the width direction of the wafer, respectively. Then the third direction is the height direction of the wafer. Compensation is performed on the wafer in the height direction. This makes it possible for the high-precision exposure machine / lithography machine to reduce the depth of focus of the lens in order to achieve higher resolution. When the wafer surface shape has a deviation of 20um according to the SEMI specification, the dynamic compensation in the height direction is sufficient to compensate within 20um, making the wafer surface shape scanning more accurate.

[0044] Therefore, the wafer surface detection and compensation method provided in this embodiment can not only filter the original data of wafer scanning to make the scanned data more accurate, but also dynamically compensate the filtered scan strip data during exposure, thereby further improving the accuracy of wafer surface detection.

[0045] In some embodiments, step S101, scanning the wafer to obtain multiple sets of raw data, includes: moving the workpiece stage carrying the wafer to move the wafer under the exposure lens and statically exposing a mark; moving the workpiece stage again and using a vertical sensor to focus the light spot on the center of the mark; attaching the wafer to the workpiece stage and moving the workpiece stage while using a vertical sensor to scan the wafer.

[0046] It should be noted that during wafer scanning, the coordinates of the workpiece stage position were also recorded, such as... Figure 2 As shown, the position of the workpiece stage after moving the workpiece stage carrying the wafer is recorded as (X1, Y1), and the position of the workpiece stage after moving the workpiece stage again and using a vertical sensor to focus the light spot on the center of the mark is recorded as (X2, Y2).

[0047] After recording the position coordinates of the workpiece stage, the horizontal position deviation between the vertical sensor and the exposure lens is calculated as follows:

[0048] (a, b) = (X1, Y1)-(X2, Y2);

[0049] The horizontal position deviation (a, b) is used to characterize the positions of the objective lens and the vertical sensor in the zero coordinate system of the stage.

[0050] In some embodiments, the step of moving the workpiece stage and scanning the wafer using a vertical sensor includes: moving the workpiece stage to move the wafer along the Y direction until the vertical sensor scans one strip of the wafer to obtain a set of raw data, and then moving it a preset distance in the X direction to scan the next strip until the scanning is completed, thereby obtaining multiple sets of raw data.

[0051] In this embodiment, the Y direction is the first direction described in the above embodiments, which is also the exposure direction; the X direction is the second direction described in the above embodiments; and the third direction is the scanning sensing direction of the vertical sensor.

[0052] In this embodiment, the workpiece stage moves the wafer in the Y direction. After one strip scan is completed, the workpiece stage steps in the X direction. The preset distance of the step is preset. The setting rules for the preset distance include: if performance is prioritized, the preset distance is less than the X-direction width of the exposure field of view; if yield is prioritized, the X-direction width is increased.

[0053] like Figure 3 As shown, after the scan is completed, multiple sets of raw data for the scan strips can be obtained, which can be represented as (X1, Y... 1j Z 1j (X2, Y) 2j Z 2j )……(X i Y ij Z ij ).

[0054] In some embodiments, step S102, the step of filtering all the original data to obtain scan strip data, includes: performing a moving average on all the original scan data to obtain multiple sets of moving data, wherein each set of original data corresponds to at least one set of moving data; calculating the difference between the corresponding original data and the moving data; removing the moving data whose difference is greater than a preset threshold, and filling the positions of the removed moving data with data to obtain data with coarse points removed; performing a moving average on the data with coarse points removed to obtain scan strip data.

[0055] In this embodiment, a moving average is performed on all the original scan data to remove coarse points, i.e., invalid points, such as... Figure 4 As shown, some data points clearly deviate from the overall trend. Removing these data points can improve the accuracy of the data. When performing a moving average, because the vertical sensor sampling frequency is fixed and the workpiece stage moves at a constant speed, each strip X... i The Y-coordinate is an arithmetic sequence. If the sliding window moveSize is set to C (mm), then the number of sliding points... Perform a moving average on the bands, for example, on the first band (X1, Y). 1j Z1j The average is calculated using the following formula:

[0056]

[0057] Therefore, we can obtain all the data after combining the moving average:

[0058]

[0059] When calculating the difference between the corresponding original data and the sliding data, i.e., calculating (X1, Y... 1j Z 1j (X2, Y) 2j Z 2j )……(X i Y ij Z ij )and The difference is obtained as follows:

[0060]

[0061] In this embodiment, as Figure 5 As shown, a preset threshold D can be set for the data (X). i Y ij ΔZ ij Make a judgment if |ΔZ ij If |>D, then this data will be removed from the original data and the original position of the data will be filled with data to prevent data loss during wafer scanning.

[0062] In some embodiments, the step of filling the position of the removed sliding data includes: obtaining the undisturbed sliding data closest to the position of the removed sliding data, and filling the position of the removed sliding data with the undisturbed sliding data as filling data.

[0063] In this embodiment, the data removed in the above embodiments is selected from the original data whose two nearest unremoved data points are the data to the left and right of the removed data (X). i Y left Z left ), (X i Y right Z right Perform linear interpolation to fill the gaps, and you will get:

[0064]

[0065] Thus, the data after data filling is obtained:

[0066] (X1, Y) 1j Z 1in (X2, Y) 2j Z2in )……(X i Y ij Z iin ).

[0067] In this embodiment, the process and principle of performing a moving average on the data after removing coarse points are the same as those for performing a moving average on the original scan data, and will not be repeated here. The resulting scan strip data is as follows:

[0068]

[0069] In some embodiments, step S103, which involves dynamically compensating the scan strip data of the exposure position by a preset compensation value to obtain the exposure strip data, includes:

[0070] Select the coordinates of a preset number of neighboring points of the scan strip data corresponding to the coordinates of the exposure position; perform linear interpolation in the X direction on the coordinates of the exposure position using the coordinates of the preset number of points; perform linear interpolation in the Y direction on the coordinates of the exposure position using the lock table of the preset number of points to obtain the exposure data of the exposure position; calculate the exposure data for each exposure position to obtain the exposure strip data.

[0071] In this embodiment, it is to process the scan strip data (X1, Y) after moving average. 1j Z 1in (X2, Y) 2j Z 2in )……(X i Y ij Z iin The exposure strip data (X'1, Y') planned by the host computer 1j (X'2, Y') 2j )……(X' i Y' ij Perform two-dimensional difference calculation, such as Figure 6 As shown, the coordinates (X') of each strip to be exposed are... i Y' ij Select the four nearest points (X0, Y0, Z0) of the scan strip. 00 (X0, Y1, Z) 01 (X1, Y0, Z) 10 (X1, Y1, Z) 11 First, linear interpolation is performed in the X direction:

[0072]

[0073] Then perform linear interpolation in the Y direction:

[0074]

[0075] Exposure band data can be obtained:

[0076] (X′1,Y′ 1j Z′ ij (X′2,Y′) 2j Z′ 2j )……(X′ i ,Y′ ij Z′ ij )

[0077] In some embodiments, step S104, the step of sampling the exposure strip data at equal intervals, includes:

[0078] The exposure speed and the frequency of wafer movement in height are obtained during wafer exposure; the focal plane compensation spacing is calculated using the exposure speed and the frequency of movement; and the exposure strip data is sampled based on the focal plane compensation spacing.

[0079] In this embodiment, the focal plane compensation distance ΔY2 = v / f can be calculated using the workpiece stage exposure speed v and the stage z-axis movement frequency f.

[0080] In some embodiments, step S105, which assigns a preset compensation value to the exposure data obtained by equally spaced sampling, includes:

[0081] After statically exposing a mark, the mark's position is taken as the optimal focal plane; the height of each exposure position in the optimal focal plane and exposure strip data is calculated to calculate the compensation height, and the compensation height is assigned a preset compensation value to compensate for the height of the wafer during the exposure step.

[0082] In this embodiment, the optimal focal plane Z is utilized. bf and the calculated wafer surface Z' ij The calculated workpiece stage compensation height Zcomp = (Z bf -Z' ij The compensation height is then assigned to a preset compensation value, enabling the workpiece stage to compensate based on this compensation height.

[0083] The wafer surface profile detection and compensation method provided in this embodiment uses a spectral confocal sensor to scan the surface profile of the wafer to be exposed. First, the scan data is filtered, and then two-dimensional interpolation fitting is performed on the exposure strip based on the scan strip, and workpiece stage compensation is used. This method can not only filter the original data of the wafer scan, making the scanned data more accurate, but also dynamically compensate the filtered scan strip data during exposure, thereby further improving the accuracy of wafer surface profile detection.

[0084] Please see Figure 7This application also provides a wafer surface shape detection and compensation system, including: a scanning module 1, a filtering module 2, an exposure module 3, a sampling module 4, and a detection module 5; the scanning module 1 is used to scan the wafer to obtain multiple sets of raw data; the filtering module 2 is used to filter all the raw data to obtain scan strip data; the exposure module 3 is used to expose the wafer and dynamically compensate the scan strip data of the exposure position with a preset compensation value to obtain exposure strip data; the sampling module 4 is used to sample the exposure strip data at equal intervals; the detection module 5 is used to assign a preset compensation value to the exposure data obtained by the equal interval sampling to compensate for the height of the wafer during the wafer exposure step, and to use the exposure strip data sampled at equal intervals to detect the wafer surface shape.

[0085] The wafer surface detection and compensation system provided in this embodiment can not only filter the raw data of wafer scanning to make the scanned data more accurate, but also dynamically compensate the filtered scan strip data during exposure, thereby further improving the accuracy of wafer surface detection.

[0086] In some embodiments, the filtering module 2 includes: a first moving average unit, a difference calculation unit, a data removal unit, and a second moving average unit; the first moving average unit is used to perform a moving average on all the original scan data to obtain multiple sets of moving data, wherein each set of original data has at least one set of moving data corresponding to it; the difference calculation unit is used to calculate the difference between the corresponding original data and the moving data; the data removal unit is used to remove the moving data whose difference is greater than a preset threshold, and fill the positions of the removed moving data with data to obtain data with removed coarse points; the second moving average unit is used to perform a moving average on the data with removed coarse points to obtain scan strip data.

[0087] In some embodiments, when the data removal unit fills the position of the removed sliding data with data, it includes the following steps: obtaining the undisturbed sliding data closest to the position of the removed sliding data, and filling the position of the removed sliding data with the undisturbed sliding data as filling data.

[0088] In some embodiments, the scanning module 1 includes: an exposure unit, a focusing unit, and a scanning unit; the exposure unit is used to move the workpiece stage carrying the wafer to move the wafer under the exposure lens and statically expose a mark; the focusing unit is used to move the workpiece stage again and use a vertical sensor to focus the light spot on the center of the mark; the scanning unit is used to attach the wafer to the workpiece stage, move the workpiece stage, and use a vertical sensor to scan the wafer.

[0089] In some embodiments, when the scanning unit moves the workpiece stage and uses a vertical sensor to scan the wafer, the following steps are specifically included: the workpiece stage is moved to drive the wafer to move along the Y direction until the vertical sensor scans a strip of the wafer to obtain a set of raw data, and then moves a preset distance in the X direction to scan the next strip until the scanning is completed, and multiple sets of raw data are obtained.

[0090] In some embodiments, the exposure module 3 includes: a coordinate selection unit, a first linear interpolation unit, a second linear interpolation unit, and an exposure data calculation unit; the coordinate selection unit is used to select the coordinates of a preset number of neighboring points of the scan strip data corresponding to the coordinates of the exposure position; the first linear interpolation unit is used to perform linear interpolation in the X direction on the coordinates of the exposure position using the coordinates of the preset number of points; the second linear interpolation unit is used to perform linear interpolation in the Y direction on the coordinates of the exposure position using a lock table of the preset number of points to obtain the exposure data of the exposure position; the exposure data calculation unit is used to calculate the exposure data for each exposure position to obtain the exposure strip data.

[0091] In some embodiments, the sampling module 4 includes: a moving frequency acquisition unit, a focal plane compensation spacing calculation unit, and an exposure strip sampling unit; the moving frequency acquisition unit is used to acquire the exposure speed and the moving frequency of the wafer in height when exposing the wafer; the focal plane compensation spacing calculation unit is used to calculate the focal plane compensation spacing using the exposure speed and the moving frequency; and the exposure strip sampling unit is used to sample the exposure strip data according to the focal plane compensation spacing.

[0092] In some embodiments, the detection module 5 includes: an optimal focal plane determination unit and a compensation height calculation unit; the optimal focal plane determination unit is used to determine the position of the mark as the optimal focal plane after statically exposing a mark; the compensation height calculation unit is used to calculate the compensation height by calculating the height of each exposure position in the exposure strip data and the optimal focal plane, and assigning the compensation height to a preset compensation value to compensate for the height of the wafer during the exposure step.

[0093] This application provides an electronic device; please refer to [link / reference]. Figure 8 The electronic device includes a memory 601, a processor 602, and a computer program stored in the memory 601 and executable on the processor 602. When the processor 602 executes the computer program, it implements the wafer surface detection and compensation method described above.

[0094] Furthermore, the electronic device also includes at least one input device 603 and at least one output device 604.

[0095] The aforementioned memory 601, processor 602, input device 603, and output device 604 are connected via bus 605.

[0096] The input device 603 can specifically be a camera, touch panel, physical buttons, or mouse, etc. The output device 604 can specifically be a display screen.

[0097] The memory 601 can be a high-speed random access memory (RAM) or a non-volatile memory, such as a disk storage device. The memory 601 is used to store a set of executable program code, and the processor 602 is coupled to the memory 601.

[0098] Furthermore, this application embodiment also provides a computer-readable storage medium, which may be disposed in the electronic device in the above embodiments, and may be the memory 601 in the foregoing embodiments. The computer-readable storage medium stores a computer program, which, when executed by the processor 602, implements the wafer surface detection and compensation method described in the foregoing method embodiments.

[0099] Furthermore, the storage medium of this computer can also be a USB flash drive, a portable hard drive, a read-only memory (ROM), RAM, a magnetic disk, or an optical disk, or any other medium that can store program code.

[0100] In the several embodiments provided in this application, it should be understood that the disclosed apparatus and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of modules is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple modules or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between apparatuses or modules may be electrical, mechanical, or other forms.

[0101] The modules described as separate components may or may not be physically separate. The components shown as modules may or may not be physical modules; that is, they may be located in one place or distributed across multiple network modules. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs.

[0102] Furthermore, the functional modules in the various embodiments of the present invention can be integrated into one processing module, or each module can exist physically separately, or two or more modules can be integrated into one module. The integrated modules described above can be implemented in hardware or as software functional modules.

[0103] If the integrated module is implemented as a software functional module and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of the present invention.

[0104] This application also provides a computer program product for executing the wafer surface detection and compensation method described in any of the above embodiments.

[0105] It should be noted that, for the sake of simplicity, the foregoing method embodiments are all described as a series of actions. However, those skilled in the art should understand that the present invention is not limited to the described order of actions, because according to the present invention, some steps can be performed in other orders or simultaneously. Furthermore, those skilled in the art should also understand that the embodiments described in the specification are preferred embodiments, and the actions and modules involved are not necessarily essential to the present invention.

[0106] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0107] In summary, although the present invention has been disclosed above with reference to preferred embodiments, the above preferred embodiments are not intended to limit the present invention. Those skilled in the art can make various modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the scope defined in the claims.

Claims

1. A method for detecting and compensating for wafer surface shape, characterized in that, include: The wafer is scanned to obtain multiple sets of raw data; The step of scanning the wafer to obtain multiple sets of raw data includes: moving the workpiece stage carrying the wafer to move the wafer under the exposure lens and statically exposing a mark; moving the workpiece stage again and using a vertical sensor to focus the light spot on the center of the mark; attaching the wafer to the workpiece stage, moving the workpiece stage and using the vertical sensor to scan the wafer; All the original data are filtered to obtain scan strip data; The wafer is exposed, and during exposure, the coordinates of a preset number of points adjacent to the scan strip data corresponding to the coordinates of the exposure position are selected; the coordinates of the exposure position are linearly interpolated in the X direction using the coordinates of the preset number of points; the coordinates of the exposure position are linearly interpolated in the Y direction using the coordinates of the preset number of points to obtain the exposure data of the exposure position; the exposure data is calculated for each exposure position to obtain the exposure strip data; The exposure strip data is sampled at equal intervals; After statically exposing a mark, the position of the mark is taken as the optimal focal plane; a compensation height is calculated based on the optimal focal plane and the height of each exposure position in the exposure strip data, and the compensation height is sent to the workpiece stage to compensate for the height of the wafer during the exposure step, and the wafer surface is detected using the equally spaced sampled exposure strip data.

2. The wafer surface type detection and compensation method as described in claim 1, characterized in that, The step of filtering all the original data to obtain the scanned strip data includes: A moving average is performed on all the original data to obtain multiple sets of moving data, wherein each set of original data has at least one set of moving data corresponding to it; Calculate the difference between the corresponding original data and the sliding data; The sliding data with a difference greater than a preset threshold is removed, and the positions of the removed sliding data are filled with data to obtain data with large points removed. A moving average is performed on the data after removing coarse points to obtain scanned strip data.

3. The wafer surface type detection and compensation method as described in claim 2, characterized in that, The step of filling the positions of the removed sliding data includes: Obtain the undisturbed sliding data that is closest to the position of the discarded sliding data, and fill the position of the discarded sliding data with this undisturbed sliding data as fill data.

4. The wafer surface type detection and compensation method as described in claim 1, characterized in that, The step of moving the workpiece stage and scanning the wafer using the vertical sensor includes: moving the workpiece stage to move the wafer along the Y direction until the vertical sensor scans one strip of the wafer to obtain a set of raw data, and then moving it a preset distance in the X direction to scan the next strip until the scanning is completed and multiple sets of raw data are obtained.

5. The wafer surface type detection and compensation method as described in claim 1, characterized in that, The step of sampling the exposure strip data at equal intervals includes: The exposure speed and the frequency of wafer movement in height during wafer exposure are obtained. The focal plane compensation distance is calculated using the exposure speed and the movement frequency; The exposure strip data is sampled based on the focal plane compensation spacing.

6. A wafer surface type detection and compensation system, characterized in that, include: The scanning module is used to scan the wafer and obtain multiple sets of raw data; The step of scanning the wafer to obtain multiple sets of raw data includes: moving the workpiece stage carrying the wafer to move the wafer under the exposure lens and statically exposing a mark; moving the workpiece stage again and using a vertical sensor to focus the light spot on the center of the mark; attaching the wafer to the workpiece stage, moving the workpiece stage and using the vertical sensor to scan the wafer; The filtering module is used to filter all the original data to obtain scan strip data; An exposure module is used to expose a wafer. During exposure, it selects the coordinates of a preset number of points adjacent to the scan strip data corresponding to the coordinates of the exposure position; it performs linear interpolation in the X direction on the coordinates of the exposure position using the coordinates of the preset number of points; it performs linear interpolation in the Y direction on the coordinates of the exposure position using the coordinates of the preset number of points to obtain the exposure data of the exposure position; and it calculates the exposure data for each exposure position to obtain the exposure strip data. The sampling module is used to sample the exposure strip data at equal intervals; The detection module is used to take the position of a mark as the optimal focal plane after static exposure of a mark; calculate a compensation height based on the optimal focal plane and the height of each exposure position in the exposure strip data, and send the compensation height to the workpiece stage to compensate for the height of the wafer during the exposure step; and use the equally spaced sampled exposure strip data to perform surface shape detection on the wafer.

7. An electronic device comprising: A memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, when the processor executes the computer program, it implements the method according to any one of claims 1 to 5.

8. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the method described in any one of claims 1 to 5.

9. A computer program product comprising a program for performing the method according to any one of claims 1 to 5.

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