A silicon carbide power module with low parasitic and double-sided heat dissipation

Abstract

The application discloses a novel silicon carbide power module with ultra-low stray inductance and double-side heat dissipation, which comprises a power module assembly, a plastic package body and double-side heat dissipation assemblies. The power module assembly is composed of a lower bridge assembly and an upper bridge assembly which are symmetrically arranged and connected through a molybdenum block. In operation, the stray inductances in the upper bridge arm and the lower bridge arm offset each other, thereby reducing the overall stray inductance of the module. The power module assembly is divided into upper and lower heat dissipation channels through the two double-side heat dissipation assemblies, thereby doubling the contact area of the cooling liquid and the module, improving the heat dissipation capacity of the module, effectively reducing the maximum junction temperature of the silicon carbide module and improving the working efficiency of the silicon carbide module. Small-area and densely-distributed heat dissipation columns are arranged at the bottom of the high-heat chip, and low-heat areas are provided with heat dissipation columns with large area but small quantity. The heat dissipation columns are reasonably arranged according to the arrangement of the chip, the local cooling liquid is prevented from excessively increasing the temperature to affect the overall heat exchange efficiency, and thus the overall heat dissipation effect is ensured.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of power modules, in particular to a high-power-density module with three-dimensional stacked chips. BACKGROUND

[0002] A power module is a key component integrated with power electronics technology, mainly composed of a control circuit and a power drive circuit, commonly used in motor control, lighting control, battery management systems, etc. Today, the new energy vehicle industry is developing rapidly, and the requirements for vehicle power semiconductor devices are becoming increasingly stringent, making vehicle power semiconductor devices develop rapidly towards high power and densification. Silicon carbide (SiC) power semiconductor devices have great potential in high-temperature, high-frequency and high-power-density applications due to their high breakdown field strength, high thermal conductivity and high electron saturation drift rate. However, traditional 8-parallel silicon carbide module packaging technology generally uses HPD packaging form, single-sided heat dissipation design, and the existing module heat dissipation structure requires applying thermal grease to the DBC board or welding the DBC to the heat dissipation substrate to achieve heat conduction. However, this increases the thermal resistance of the module, reduces the heat dissipation capacity of the module, and loses part of the module's flow capacity, making the heat dissipation path long and the thermal resistance large, making it difficult to effectively dissipate the high heat density generated by the SiC chip, resulting in high module junction temperature and restricting its performance.

[0003] At the same time, due to the characteristics of silicon carbide chips, multiple chips in parallel are highly sensitive to loop stray inductance. In high-frequency switching conditions, the power loop layout inside the module, such as the positive and negative connection components and the interconnection method, will generate a large stray inductance, causing switching voltage spikes and increasing switching losses, which becomes the main bottleneck for the use of SiC high-speed switching advantages.

[0004] The existing power module still has deficiencies in systematic optimization of heat dissipation structure and power stray inductance. Therefore, an integrated double-sided heat dissipation component and optimized power module component layout are needed to meet the requirements of ultra-low stray inductance and double-sided high-efficiency heat dissipation. SUMMARY

[0005] Therefore, the present application provides a low-stray and double-sided heat dissipation silicon carbide power module to solve the above technical problems.

[0006] The application discloses a low-impurity and double-sided heat-dissipation silicon carbide power module, which comprises a plurality of power module components, a plurality of plastic packages arranged on the power module components and two double-sided heat-dissipation components arranged on the power module components. The power module components comprise a lower bridge component, an upper bridge component, a plurality of molybdenum blocks connecting the lower bridge component and the upper bridge component, a plurality of signal terminals arranged on the lower bridge component and the upper bridge component, an AC copper bar arranged on the lower bridge component, a positive copper bar arranged on the upper bridge component, a negative copper bar arranged on the lower bridge component and an insulating gasket arranged between the positive copper bar and the negative copper bar. The lower bridge component comprises a first DBC plate, a plurality of lower bridge chips arranged on the first DBC plate, at least two copper clips arranged on the lower bridge chips, a plurality of first heat-dissipation columns arranged in an array on the first DBC plate and a plurality of second heat-dissipation columns arranged on the first DBC plate. The upper bridge component comprises a second DBC plate, a plurality of upper bridge chips arranged on the second DBC plate, a plurality of third heat-dissipation columns arranged in an array on the first DBC plate and a plurality of fourth heat-dissipation columns arranged on the second DBC plate. The second DBC plate and the first DBC plate are arranged in a laminated and spaced manner, the upper and lower ends of the molybdenum blocks are respectively welded to the first DBC plate and the upper bridge chips, the positive copper bar and the negative copper bar are arranged in parallel and in a spaced manner, the insulating gasket is arranged between the positive copper bar and the negative copper bar, and the two double-sided heat-dissipation components are arranged on the lower bridge component and the upper bridge component respectively. The double-sided heat-dissipation component comprises a base and a water channel formed in an end face of the base facing the power module component, the base is sealingly attached to the lower bridge component or the upper bridge component and covers the water channel, and the heat-dissipation columns of the lower bridge component and the upper bridge component are respectively inserted into the water channels of the two double-sided heat-dissipation components.

[0007] Further, the first DBC plate comprises a first ceramic insulating layer, a first lower copper layer arranged on the first ceramic insulating layer and a first upper copper layer arranged on the first ceramic insulating layer, the first ceramic insulating layer is located between the first upper copper layer and the first lower copper layer, the first upper copper layer is located on an end face of the first ceramic insulating layer facing the upper bridge component and is used for arranging the lower bridge chips and the signal terminals, and the first lower copper layer is located on an end face of the first ceramic insulating layer facing away from the upper bridge component and is used for arranging the first heat-dissipation columns and the second heat-dissipation columns.

[0008] Further, the first, second, third and fourth heat dissipation columns are in a diamond shape, the first and second heat dissipation columns are integrally formed with the first lower copper layer, the first and second heat dissipation columns are formed by stamping the first lower copper layer, the third and fourth heat dissipation columns are integrally formed with the second lower copper layer, and the third and fourth heat dissipation columns are formed by stamping the second lower copper layer.

[0009] Further, the area of the second heat dissipation column is greater than that of the first heat dissipation column, the first heat dissipation column corresponds to the lower bridge chip, and the second heat dissipation column corresponds to the molybdenum block.

[0010] Further, the second DBC plate includes a second ceramic insulating layer, a second lower copper layer arranged on the second ceramic insulating layer, and a second upper copper layer arranged on the second ceramic insulating layer, the second upper copper layer is located on the end face of the second ceramic insulating layer facing the lower bridge assembly and is used to arrange the upper bridge chip and the signal terminal, and the second lower copper layer is located on the end face of the second ceramic insulating layer away from the lower bridge assembly and is used to arrange the third and fourth heat dissipation columns.

[0011] Further, the area of the fourth heat dissipation column is greater than that of the third heat dissipation column, the third heat dissipation column corresponds to the upper bridge chip, and the fourth heat dissipation column corresponds to the empty area of the second DBC plate.

[0012] Further, the signal terminal, the AC copper bar, the positive copper bar and the negative copper bar are respectively provided with a through hole, and the through hole is used for flowing the plastic sealing liquid into the through hole during epoxy plastic sealing.

[0013] Further, the double-sided heat dissipation assembly further includes an inlet arranged at one end of the base and an outlet arranged at the other end of the base, one end of the inlet penetrates through the side wall of the base, and the other end communicates with the water channel, one end of the outlet penetrates through the side wall of the base, and the other end communicates with the water channel, the inlet and the outlet are respectively arranged as the liquid inlet and the liquid outlet of the cooling liquid and are located on both sides of the base, and the arrangement direction of the inlet and the outlet is parallel to the arrangement direction of the plurality of power module assemblies.

[0014] Compared with the prior art, the low-stray inductance and double-sided heat dissipation silicon carbide power module provided by the application adopts the opposite symmetrical arrangement of the lower bridge assembly and the upper bridge assembly, so that the upper and lower bridge arms are symmetrically arranged, the stray inductance in the upper bridge arm and the stray inductance in the lower bridge arm are offset to each other during the operation of the module, the stray inductance of the whole module is reduced, and the working efficiency of the silicon carbide module is improved. The positive copper bar and the negative copper bar are located on the same side and adopt a laminated design, the current directions of the two are opposite, the magnetic flux generated when the two are symmetrically arranged is offset to each other, the stray inductance of the direct current loop is significantly reduced, and finally the silicon carbide module has a minimum stray inductance of 1.5 nH or less, the robust performance of the silicon carbide power module is effectively improved, and the working efficiency of the silicon carbide power module is released. At the same time, the power module assembly can be cooled on both sides and is divided into upper and lower heat dissipation channels through two double-sided heat dissipation assemblies, so that the contact area of the cooling liquid and the module is doubled, the heat dissipation capacity of the module is improved, the maximum junction temperature of the silicon carbide module is effectively reduced, and the working efficiency of the silicon carbide module is improved. The heat dissipation column is directly formed by stamping the lower copper layer, so that the heat-conducting silicone grease or the heat dissipation substrate is not needed for heat conduction, the whole lower copper layer is directly used as the heat dissipation substrate to contact the cooling liquid for heat exchange, the heat dissipation path is short, and the heat dissipation efficiency is improved. The small-area and densely distributed heat dissipation columns are arranged at the bottom of the chip with high heat, so that a larger effective contact area is obtained, concentrated and efficient heat exchange is achieved, the low-heat area reduces the contact area with the cooling liquid through the heat dissipation columns with large area but small quantity, and the excessive temperature rise of the local cooling liquid is avoided to affect the overall heat exchange efficiency, so that the overall heat dissipation effect is ensured. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1 A structure diagram of a low-stray inductance and double-sided heat dissipation silicon carbide power module provided by the application.

[0016] Figure 2 A structure diagram of a low-stray inductance and double-sided heat dissipation silicon carbide power module provided by the application. Figure 1 A structure diagram of a low-stray inductance and double-sided heat dissipation silicon carbide power module provided by the application.

[0017] Figure 3 A structure diagram of a low-stray inductance and double-sided heat dissipation silicon carbide power module provided by the application. Figure 1 A structure diagram of a low-stray inductance and double-sided heat dissipation silicon carbide power module provided by the application.

[0018] Figure 4 A structure diagram of a low-stray inductance and double-sided heat dissipation silicon carbide power module provided by the application. Figure 1 A structure diagram of a low-stray inductance and double-sided heat dissipation silicon carbide power module provided by the application.

[0019] Figure 5 A structure diagram of a low-stray inductance and double-sided heat dissipation silicon carbide power module provided by the application. Figure 1Schematic diagram of the structure of the power module components of the low-noise and double-sided heat dissipation silicon carbide power module, excluding the lower bridge component and negative copper busbar.

[0020] Figure 6 for Figure 1 A schematic structural diagram of the power module assembly of the low-noise and double-sided heat dissipation silicon carbide power module from another angle, removing the lower bridge assembly and the negative copper busbar.

[0021] Figure 7 for Figure 1 A cross-sectional view of a power module assembly of a silicon carbide power module with low inductance and double-sided heat dissipation.

[0022] Figure 8 for Figure 1 Schematic diagram of the structure of the double-sided heat dissipation component of the low-noise and double-sided heat dissipation silicon carbide power module.

[0023] Figure 1: Power module assembly 10, plastic package 20, double-sided heat dissipation assembly 30, lower bridge assembly 11, upper bridge assembly 12, molybdenum block 13, signal terminal 14, AC copper bus 15, positive copper bus 16, negative copper bus 17, insulating gasket 18, first DBC board 111, lower bridge chip 112, copper clip 113, first heat dissipation column 114, second heat dissipation column 115, first ceramic insulating layer 116, first lower copper layer 117, first upper copper layer 118, second DBC board 121, upper bridge chip 122, third heat dissipation column 123, fourth heat dissipation column 124, second ceramic insulating layer 125, second lower copper layer 126, second upper copper layer 127, base 31, water channel 32, inlet 33, outlet 34. DETAILED DESCRIPTION

[0024] The following is a further detailed description of specific embodiments of the present invention. It should be understood that the description of the embodiments of the present invention herein is not intended to limit the scope of protection of the present invention.

[0025] like Figures 1 to 8 As shown, it is a schematic structural diagram of the silicon carbide power module with low noise and double-sided heat dissipation provided by the present invention. The silicon carbide power module with low noise and double-sided heat dissipation includes a plurality of power module assemblies 10, a plurality of plastic packages 20 arranged on the power module assemblies 10, and two double-sided heat dissipation assemblies 30 arranged on the power module assemblies 10. It is conceivable that the silicon carbide power module with low noise and double-sided heat dissipation also includes other functional modules, such as connection components and mounting components, etc., which are technologies well known to those skilled in the art and will not be described in detail here.

[0026] The power module assembly 10 comprises a lower bridge assembly 11, an upper bridge assembly 12, a plurality of molybdenum blocks 13 connecting the lower bridge assembly 11 and the upper bridge assembly 12, a plurality of signal terminals 14 arranged on the lower bridge assembly 11 and the upper bridge assembly 12, an AC copper bar 15 arranged on the lower bridge assembly 11, a positive copper bar 16 arranged on the upper bridge assembly 12, a negative copper bar 17 arranged on the lower bridge assembly 11, and an insulating pad 18 arranged between the positive copper bar 16 and the negative copper bar 17.

[0027] The lower bridge assembly 11 comprises a first DBC plate 111, a plurality of lower bridge chips 112 arranged on the first DBC plate 111, at least two copper clips 113 arranged on the lower bridge chips 112, a plurality of first heat dissipation columns 114 arranged in an array on the first DBC plate 111, and a plurality of second heat dissipation columns 115 arranged on the first DBC plate 111.

[0028] The first DBC plate 111 is a direct copper clad ceramic substrate (DBC), which is formed by co-crystallizing sintering of a ceramic substrate and a copper foil at high temperature, mainly used in power electronic modules, and has excellent heat conduction and insulation performance. The first DBC plate 111 should be prior art, and will not be described here. The first DBC plate 111 comprises a first ceramic insulating layer 116, a first lower copper layer 117 arranged on the first ceramic insulating layer 116, and a first upper copper layer 118 arranged on the first ceramic insulating layer 116. The first ceramic insulating layer 116 is located between the first upper copper layer 118 and the first lower copper layer 117. The first upper copper layer 118 is located on the end face of the first ceramic insulating layer 116 facing the upper bridge assembly 12 and is used to arrange the lower bridge chips 112 and the signal terminals 14, and the first lower copper layer 117 is located on the end face of the first ceramic insulating layer 116 away from the upper bridge assembly 12 and is used to arrange the first heat dissipation columns 114 and the second heat dissipation columns 115.

[0029] The lower bridge chips 112 are arranged in eight parallel connections, and each four lower bridge chips 112 are arranged in a straight line on both sides of the first DBC plate 111, between the lower bridge chips 112 and the first upper copper layer 118 of the first DBC plate 111, and a silver paste sintering process is adopted to improve the heat transfer of the chips. The lower bridge chips 112 themselves should be prior art, and their structure and working principle will not be described here.

[0030] The copper Clip 113 connects the lower bridge chip 112 and the first upper copper layer 118 of the first DBC plate 111, and the chip and terminal connection is realized by welding with copper strips or copper sheets, so as to increase the cross-sectional area of current flow and reduce the stray inductance of the module.

[0031] The first and second heat dissipation columns 114 and 115 are in a rhombus shape and are integrally formed with the first lower copper layer 117, which is directly formed by stamping the first lower copper layer 117, so that the heat-conducting silicone grease or the heat dissipation substrate is not needed for heat conduction, the entire first lower copper layer 117 is directly used as a heat dissipation substrate to contact the cooling liquid for heat exchange, thereby reducing the number of heat transfer times and directly acting on the first lower copper layer 117 to shorten the heat dissipation path and improve the heat dissipation efficiency. Since the lower bridge chips 112 are arranged in a straight line on both sides of the first DBC plate 111, and the middle position of the first DBC plate 111 is used to arrange the molybdenum block 13 with small heat generation, in order to ensure that the cooling liquid can concentrate heat exchange on the heat dissipation columns at the bottom of the lower bridge chips 112, the area of the second heat dissipation column 115 is greater than that of the first heat dissipation column 114, the first heat dissipation column 114 is arranged corresponding to the lower bridge chip 112, and the second heat dissipation column 115 is arranged corresponding to the molybdenum block 13, so as to increase the number of heat dissipation columns in the area with large heat generation and increase the heat dissipation area at the same time, so as to ensure that the cooling liquid has a large contact area in the high-heat area and ensure the heat exchange effect. And for the area with small heat generation, the contact area with the cooling liquid is reduced through two large-volume heat dissipation columns, so as to avoid excessive heat exchange of the cooling liquid and temperature rise, and avoid affecting the subsequent heat exchange effect.

[0032] The upper bridge assembly 12 includes a second DBC plate 121, a plurality of upper bridge chips 122 arranged on the second DBC plate 121, a plurality of third heat dissipation columns 123 arranged in an array on the first DBC plate 111, and a plurality of fourth heat dissipation columns 124 arranged on the second DBC plate 121.

[0033] The second DBC board 121 has the same composition as the first DBC board 111, and comprises a second ceramic insulating layer 125, a second lower copper layer 126 arranged on the second ceramic insulating layer 125, and a second upper copper layer 127 arranged on the second ceramic insulating layer 125. The second upper copper layer 127 is arranged on the end face of the second ceramic insulating layer 125 facing the lower bridge assembly 11 and is used to arrange the upper bridge chip 122 and the signal terminal 14, and the second lower copper layer 126 is arranged on the end face of the second ceramic insulating layer 125 facing away from the lower bridge assembly 11 and is used to arrange the third heat dissipation column 123 and the fourth heat dissipation column 124. The lower bridge assembly 11 and the upper bridge assembly 12 are arranged in a spaced-apart manner and are both arranged horizontally, so that the upper and lower bridge arms are symmetrically arranged. The stray inductance in the upper bridge arm and the stray inductance in the lower bridge arm cancel each other out when the module is working, thereby reducing the overall stray inductance of the module and improving the working efficiency of the silicon carbide module. At the same time, the power module assembly 10 can be cooled on both sides through two double-sided cooling assemblies 30, and the cooling liquid and the module have a doubled contact area, thereby improving the cooling capacity of the module and effectively reducing the maximum junction temperature of the silicon carbide module and improving the working efficiency of the silicon carbide module.

[0034] The upper bridge chip 122 is arranged in eight parallel connections, and every four upper bridge chips 122 are arranged in a straight line on the second upper copper layer 127 and are arranged in two rows. The upper bridge chip 122 is arranged at the middle position of the second upper copper layer 127,

[0035] The third heat dissipation column 123 and the fourth heat dissipation column 124 are directly formed by stamping the second lower copper layer 126, so that the entire second lower copper layer 126 is directly used as a heat dissipation substrate. The area of the fourth heat dissipation column 124 is greater than that of the third heat dissipation column 123. The third heat dissipation column 123 is arranged corresponding to the upper bridge chip 122, and the fourth heat dissipation column 124 is arranged corresponding to the empty area of the second DBC board 121, so that the cooling liquid can be concentrated on the heat dissipation column at the bottom of the upper bridge chip 122. The fourth heat dissipation column 124 has the same effect as the first heat dissipation column 114 and the second heat dissipation column 115, and is used to ensure that the cooling liquid has a large contact area in the high-heat area and makes the heat dissipation path short, thereby improving the heat dissipation efficiency.

[0036] The upper and lower ends of the molybdenum block 13 are respectively welded to the first upper copper layer 118 and the upper bridge chip 122. The molybdenum block 13 is used to connect the lower bridge assembly 11 and the upper bridge assembly 12.

[0037] The plurality of signal terminals 14 are connected to the first upper copper layer 118 and the second upper copper layer 127, respectively. These signal terminals 14 function as signal and control terminals for the lower bridge assembly 11 and the upper bridge assembly 12. They are responsible for transmitting control signals from an external control system to the power module, thereby controlling the module's operating state and output power. The signal pins 27 are known from the prior art and are not described in detail here.

[0038] The AC copper busbar 15 is used to output the alternating current converted by the module. One end of the AC copper busbar 15 is connected to the first upper copper layer 118, and the other end extends through the plastic package 20 for connection to an external load. The positive copper busbar 16 and the negative copper busbar 17 are located on the same side. One end of the positive copper busbar 16 is connected to the second upper copper layer 127, and the other end extends through the plastic package 20. The negative copper busbar 17 is connected to the first upper copper layer 118, and the other end extends through the plastic package 20. The positive copper busbar 16 and the negative copper busbar 17 are respectively connected to the negative and positive poles of an external DC power supply, forming a DC circuit to power the module. The positive copper busbar 16 and the negative copper busbar 17 are arranged parallel to each other and spaced apart. This allows them to adopt a stacked design. The currents in the two busbars are in opposite directions. When the currents in the symmetrical arrangement are in opposite directions, the magnetic flux generated by the opposing currents cancels out, reducing the circuit inductance and thus the stray inductance. At the same time, the second DBC board 121 and the first DBC board 111 are also stacked and spaced apart, so that the stray inductance in the upper bridge arm and the stray inductance in the lower bridge arm cancel each other when the module is operating, reducing the stray inductance of the module as a whole and improving the module's operating efficiency. At the same time, the second DBC board 121 and the first DBC board 111 are the same size, and the positive copper busbar 16 and the negative copper busbar 17 are the same size, so that the two are completely symmetrical and further reduce the loop distance. The insulating gasket 18 is located between the positive copper busbar 16 and the negative copper busbar 17 and is used to separate the positive copper busbar 16 and the negative copper busbar 17. A through hole 19 is respectively provided on the signal terminal 14, the AC copper busbar 15, the positive copper busbar 16, and the negative copper busbar 17. The through hole 19 is used to allow the molding liquid to flow into the through hole 19 during epoxy molding, thereby increasing the bonding ability of the molding body 20 after solidification, reducing the internal delamination of the molding shell, and improving the heat transfer inside the module.

[0039] The plastic package 20 is formed by coating the power module assembly 10 with a sealing material such as epoxy resin and then curing it, thereby sealing the gaps between different power terminals to fix their relative positions and achieve electrical isolation.

[0040] The first lower copper layer 117 and the second lower copper layer 126 are exposed from the plastic package 20, so that the heat dissipation columns can extend into the double-sided heat dissipation assembly 30. The signal terminal 14, the AC copper bar 15, the positive copper bar 16, and the negative copper bar 17 extend from the plastic package 20 to facilitate connection with external electrical devices.

[0041] Two double-sided heat dissipation assemblies 30 are arranged on the lower bridge assembly 11 and the upper bridge assembly 12, respectively. The double-sided heat dissipation assembly 30 includes a base 31, a water channel 32 arranged on an end face of the base 31 facing the power module assembly 10, an inlet 33 arranged on one end of the base 31, and an outlet 34 arranged on the other end of the base 31.

[0042] The base 31 is sealed and attached to the first lower copper layer 117 or the second lower copper layer 126, and covers the water channel 32 to form a channel for the flow of cooling liquid. The heat dissipation columns of the lower bridge assembly 11 and the upper bridge assembly 12 are respectively inserted into the water channels 32 of the two double-sided heat dissipation assemblies 30. The inlet 33 penetrates through the side wall of the base 31 at one end and communicates with the water channel 32 at the other end, and the outlet 34 penetrates through the side wall of the base 31 at one end and communicates with the water channel 32 at the other end. The inlet 33 and the outlet 34 are respectively arranged as the liquid inlet and the liquid outlet of the cooling liquid and are located on both sides of the base 31. The arrangement direction of the inlet 33 and the outlet 34 is parallel to the arrangement direction of the plurality of power module assemblies 10. After the cooling liquid enters the inlet 33, it exchanges heat with the heat dissipation columns inserted into the water channel 32 and then flows out of the outlet 34, thereby exchanging heat with the flowing cooling liquid to carry away the heat of the chip.

[0043] Compared with the prior art, the low-stray and double-sided heat dissipation silicon carbide power module provided by the application adopts the opposite arrangement of the lower bridge assembly 11 and the upper bridge assembly 12, so that the upper and lower bridge arms are symmetrically arranged, the stray inductance in the upper bridge arm and the stray inductance in the lower bridge arm are offset to each other during the operation of the module, the stray inductance of the whole module is reduced, and the working efficiency of the silicon carbide module is improved. The positive copper bar 16 and the negative copper bar 17 are located on the same side and adopt a laminated design, the current directions of the two are opposite, the magnetic flux generated when the two are symmetrically arranged is offset to each other, the stray inductance of the direct current loop is significantly reduced, and finally the silicon carbide module has a very small stray inductance within 1.5nH, the robust performance of the silicon carbide power module is effectively improved, and the working efficiency of the silicon carbide power module is released. At the same time, the power module assembly 10 can be cooled on both sides and divided into upper and lower heat dissipation channels through two double-sided heat dissipation assemblies 30, so that the contact area of the cooling liquid and the module is doubled, the heat dissipation capacity of the module is improved, the maximum junction temperature of the silicon carbide module is effectively reduced, and the working efficiency of the silicon carbide module is improved. The heat dissipation column is directly formed by stamping the lower copper layer, so that the heat-conducting silicone grease or the heat dissipation substrate is not needed for heat conduction, the entire lower copper layer is directly used as a heat dissipation substrate to contact the cooling liquid for heat exchange, the heat dissipation path is short, and the heat dissipation efficiency is improved. By arranging the small-area and densely distributed heat dissipation columns at the bottom of the high-heat chip, a larger effective contact area is obtained, concentrated and efficient heat exchange is achieved, the low-heat area reduces the contact area with the cooling liquid through the heat dissipation columns with large area but small quantity, and the local cooling liquid is prevented from being excessively heated to affect the overall heat exchange efficiency, so that the overall heat dissipation effect is ensured.

[0044] The above is only a preferred embodiment of the application, and is not used to limit the protection scope of the application, any modification, equivalent replacement or improvement within the spirit of the application is covered within the claim scope of the application.

Claims

1. A silicon carbide power module with low inductance and double-sided heat dissipation, characterized by: The low-inductance and double-sided heat dissipation silicon carbide power module includes multiple power module components, multiple plastic packaging bodies arranged on the power module components, and two double-sided heat dissipation components arranged on the power module components. The power module components include a lower bridge component, an upper bridge component, multiple molybdenum blocks connecting the lower bridge component and the upper bridge component, multiple signal terminals arranged on the lower bridge component and the upper bridge component, an AC copper busbar arranged on the lower bridge component, a positive copper busbar arranged on the upper bridge component, a negative copper busbar arranged on the lower bridge component, and an insulating gasket arranged between the positive copper busbar and the negative copper busbar. The lower bridge component includes a first DBC board, multiple lower bridge chips arranged on the first DBC board, at least two copper clips arranged on the lower bridge chip, multiple first heat dissipation columns arranged in an array on the first DBC board, and multiple second heat dissipation columns arranged on the first DBC board. The upper bridge component includes a second DBC board, multiple upper bridge chips arranged on the second DBC board, multiple third heat dissipation columns arranged in an array on the first DBC board, and multiple fourth heat dissipation columns arranged on the second DBC board. The second DBC plate and the first DBC plate are stacked and spaced apart, the upper and lower ends of the molybdenum block are respectively welded to the first DBC plate and the upper bridge chip, the positive copper busbar and the negative copper busbar are parallel to each other and spaced apart, the insulating gasket is located between the positive copper busbar and the negative copper busbar, the two double-sided heat dissipation components are respectively arranged on the lower bridge component and the upper bridge component, the double-sided heat dissipation component includes a base and a water channel opened on the end surface of the base facing the power module component, the base is sealed with the lower bridge component or the upper bridge component and covers the water channel, and the heat dissipation columns of the lower bridge component and the upper bridge component are respectively inserted into the water channels of the two double-sided heat dissipation components.

2. The silicon carbide power module with low inductance and double-sided heat dissipation according to claim 1, characterized in that: The first DBC board includes a first ceramic insulating layer, a first lower copper layer arranged on the first ceramic insulating layer, and a first upper copper layer arranged on the first ceramic insulating layer. The first ceramic insulating layer is located between the first upper copper layer and the first lower copper layer. The first upper copper layer is located on the end surface of the first ceramic insulating layer facing the upper bridge component and is used to set the lower bridge chip and the signal terminal. The first lower copper layer is located on the end surface of the first ceramic insulating layer facing away from the upper bridge component and is used to set the first heat dissipation column and the second heat dissipation column.

3. The silicon carbide power module with low inductance and double-sided heat dissipation according to claim 2, characterized in that: The first heat dissipation column, the second heat dissipation column, the third heat dissipation column, and the fourth heat dissipation column are diamond-shaped, and the first heat dissipation column and the second heat dissipation column are integrally formed with the first lower copper layer, and the first heat dissipation column and the second heat dissipation column are formed by stamping the first lower copper layer.

4. The silicon carbide power module with low inductance and double-sided heat dissipation according to claim 1, characterized in that: The area of ​​the second heat dissipation column is greater than that of the first heat dissipation column. The first heat dissipation column is arranged corresponding to the lower bridge chip, and the second heat dissipation column is arranged corresponding to the molybdenum block.

5. The silicon carbide power module with low inductance and double-sided heat dissipation according to claim 1, characterized in that: The second DBC board includes a second ceramic insulating layer, a second lower copper layer arranged on the second ceramic insulating layer, and a second upper copper layer arranged on the second ceramic insulating layer. The second upper copper layer is located on the end surface of the second ceramic insulating layer facing the lower bridge component and is used to set the upper bridge chip and the signal terminal. The second lower copper layer is located on the end surface of the second ceramic insulating layer facing away from the lower bridge component and is used to set the third heat dissipation column and the fourth heat dissipation column. The third heat dissipation column and the fourth heat dissipation column are integrally formed with the second lower copper layer, and the third heat dissipation column and the fourth heat dissipation column are formed by stamping the second lower copper layer.

6. The silicon carbide power module with low inductance and double-sided heat dissipation according to claim 1, characterized in that: The area of ​​the fourth heat dissipation column is greater than that of the third heat dissipation column. The third heat dissipation column is arranged corresponding to the upper bridge chip, and the fourth heat dissipation column is arranged corresponding to the vacant area of ​​the second DBC board.

7. The silicon carbide power module with low inductance and double-sided heat dissipation according to claim 1, characterized in that: The signal terminal, the AC copper bus, the positive copper bus, and the negative copper bus are respectively provided with a through hole, and the through hole is used to allow the molding liquid to flow into the through hole during epoxy molding.

8. The silicon carbide power module with low inductance and double-sided heat dissipation according to claim 1, characterized in that: The double-sided heat dissipation component also includes an inlet arranged at one end of the base, and an outlet arranged at the other end of the base. One end of the inlet passes through the side wall of the base, and the other end is connected to the water channel. One end of the outlet passes through the side wall of the base, and the other end is connected to the water channel. The inlet and the outlet serve as the inlet and outlet of the coolant respectively and are located on both sides of the base. The arrangement direction of the inlet and the outlet is parallel to the arrangement direction of the multiple power module assemblies.

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