Antenna and detection system based on metasurface phase control selective reflection and transmission modes

Abstract

The invention relates to an antenna based on metasurface phase control selective reflection and transmission modes and a detection system. The antenna comprises a PIN size gradient metasurface, the PIN size gradient metasurface is divided into four subunits, and the size of a gradient metal patch in the same subunit is uniformly and linearly increased along one direction; the phase regulation and control unit is used for acquiring a mode control signal and generating a beam pointing control signal based on the acquired received signal strength; and the PIN driving unit is used for controlling the PIN size gradient metasurface to be in a reflection or transmission mode based on the mode control signal, and driving the PIN size gradient metasurface to adjust the beam deflection angle according to the beam pointing control signal. According to the invention, the flexibility of mode selection of the metasurface antenna and the accuracy of phase regulation and control can be improved, and a detection system constructed based on the antenna has the characteristics of high detection speed and strong anti-interference capability, and is especially suitable for load-sensitive scenes such as unmanned aerial vehicles and satellites.

Description

Technical Field

[0001] The present invention relates to the field of antenna phase control and radar detection technology, and in particular to an antenna and detection system based on metasurface phase-controlled selective reflection and transmission modes. Background Art

[0002] Traditional antennas are widely used in fields such as communications and radar detection. Common types include dipole antennas and parabolic antennas. Their basic operating principle is to generate electromagnetic waves through changes in current in a conductor, enabling signal transmission and reception. However, traditional antennas have significant shortcomings in terms of reflection and transmission mode selection and phase control. In particular, they lack flexible switching capabilities. Most traditional antennas are designed to operate in a single mode, making it difficult to quickly switch between reflection and transmission modes according to actual needs. This makes them difficult to adapt to complex communication and detection scenarios, and also limits their application in high-voltage and strong magnetic environments. In terms of phase control, traditional antennas have limited and low-precision phase adjustment methods. They typically rely on changing the antenna's physical structure or feeding method to achieve phase changes. This operation is complex and difficult to achieve precise phase control. This cannot meet the stringent requirements of modern communication systems, such as integrated communication and detection systems, for fast and precise multi-beam phase control.

[0003] In summary, traditional antennas struggle to flexibly switch between reflection and transmission modes in complex electromagnetic environments, and their phase control precision is low and complex. While existing metasurface antennas have seen some improvements, there's still room for improvement in both mode selection flexibility and phase control accuracy. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide an antenna and detection system based on metasurface phased selection of reflection and transmission modes, which can improve the flexibility of metasurface antenna mode selection and the accuracy of phase control.

[0005] The technical solution adopted by the present invention to solve the technical problem is to provide an antenna based on metasurface phased control selective reflection and transmission mode, including: A PIN size gradient metasurface, comprising a PIN size gradient metasurface layer, a first dielectric layer, a signal isolation layer, a second dielectric layer, and a PIN array metasurface layer stacked in sequence, wherein the PIN size gradient metasurface layer comprises four PIN size gradient subunits, each PIN size gradient subunit is uniformly distributed with a plurality of gradient metal patches, and the sizes of the gradient metal patches in the same PIN size gradient subunit uniformly and linearly increase along one direction; A signal strength acquisition unit is used to acquire the received signal strength; A phase control unit, used to obtain a mode control signal and generate a beam steering control signal based on the received signal strength; The PIN driving unit is used to control the switching state of the PIN diodes in the PIN size gradient metasurface layer and the PIN array metasurface layer based on the mode control signal, so as to place the PIN size gradient metasurface in the reflection or transmission mode, and drive the PIN size gradient metasurface to adjust the beam deflection angle according to the beam pointing control signal.

[0006] Furthermore, it also includes a phase acquisition unit for acquiring a reflected wave phase signal or a transmitted wave phase signal; the phase control unit generates a phase control signal based on the phase difference between the acquired phase signal and the expected phase; the PIN driving unit controls the bias current of the PIN diode in the PIN size gradient metasurface layer to a target size based on the phase control signal, so as to adjust the reflected wave or the transmitted wave to the expected phase.

[0007] Furthermore, the target size of the PIN diode bias current in the PIN size gradient metasurface layer is expressed as

[0008]

[0009] in, is the target value of the PIN diode bias current in the PIN size gradient metasurface layer at time t, is the phase difference between the phase signal collected at time t and the expected phase.

[0010] Furthermore, it also includes an environmental parameter acquisition unit for collecting environmental parameters; the phase control unit dynamically compensates the target size of the PIN diode bias current in the PIN size gradient super surface layer based on the collected environmental parameters.

[0011] Furthermore, the target magnitude of the PIN diode bias current after compensation is expressed as

[0012]

[0013] in, To compensate for the target magnitude of the post-bias current, is the reference bias current, is the temperature compensation coefficient, is the temperature disturbance variation, is the humidity compensation coefficient, is the humidity interference variation, is the electromagnetic compensation coefficient, is the variation of electromagnetic interference.

[0014] Furthermore, the PIN array metasurface layer is evenly distributed with gap metal patches corresponding to the gradient metal patches one by one, and each gap metal patch is connected to the corresponding gap metal patch, and is electrically connected to the PIN driving unit through a PIN diode.

[0015] Furthermore, when the PIN size gradient metasurface is in the transmission mode, the incident electromagnetic wave is transmitted from the PIN size gradient metasurface layer to the PIN array metasurface layer; when the PIN size gradient metasurface is in the reflection mode, the incident electromagnetic wave is reflected by the PIN size gradient metasurface layer.

[0016] Furthermore, the gap metal patch includes a rectangular metal patch connected to the corresponding gradient metal patch, one side of the rectangular metal patch is electrically connected to the first symmetrical metal patch through a symmetrical PIN diode, and the other side is electrically connected to the second symmetrical metal patch through a second symmetrical PIN diode; the first symmetrical metal patch and the second symmetrical metal patch are symmetrical along the central axis of the rectangular metal patch, and gaps are formed between the first symmetrical metal patch, the second symmetrical metal patch and the rectangular metal patch.

[0017] Furthermore, the driving unit controls the PIN diode in the PIN size gradient metasurface layer to turn on and the two PIN diodes in the PIN array metasurface layer to turn off based on the mode control signal, so that the PIN size gradient metasurface is placed in the reflection mode, or controls the PIN diode in the PIN size gradient metasurface layer to turn off and one of the two PIN diodes in the PIN array metasurface layer to turn on and off, so that the PIN size gradient metasurface is placed in the transmission mode.

[0018] The present invention also provides a detection system comprising any one of the antennas described above.

[0019] Beneficial effects

[0020] Due to the adoption of the above technical solution, the present invention has the following advantages and positive effects compared with the prior art: the present invention constructs a linear phase gradient distribution by setting the size of the metal patch in the PIN size gradient sub-unit to increase uniformly and linearly along one direction, and the phase control unit calculates the beam pointing based on the received signal strength signal, and then generates a phase control signal and transmits it to the PIN driving unit, and then the PIN driving unit controls the beam deflection angle of the PIN size gradient metasurface based on the phase control signal, thereby realizing the control of the beam deflection angle; the present invention can quickly and accurately control the beam deflection through the PIN size gradient metasurface layer with a linear phase gradient distribution, adjust the beam pointing so that the main lobe is aligned with the target direction, thereby enhancing the signal reception strength, The anti-interference ability in harsh environments is greatly improved; the present invention enables the PIN driving unit to control the bias current of the PIN diode in the PIN size gradient metasurface based on the phase control signal, and can dynamically adjust the real-time monitored phase to gradually approach the expected phase, thereby realizing precise control of the phase; the present invention precisely controls the phase by controlling the bias current of the PIN diode, and constructs an environmental factor compensation model to adaptively and dynamically compensate the bias current of the PIN diode, thereby greatly improving the phase control accuracy; the detection device constructed by the present invention has the characteristics of fast detection speed and strong anti-interference ability, can adapt to the rapid identification and tracking of moving targets in complex environments, and is particularly suitable for scenarios such as drones and satellites that are sensitive to payloads. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 1 is a structural diagram of Example 1 of the first embodiment of the present invention;

[0022] Figure 2 2 is a schematic structural diagram of Example 2 of the first embodiment of the present invention;

[0023] Figure 3 2 is a schematic structural diagram of a PIN size gradient metasurface according to a first embodiment of the present invention;

[0024] Figure 4 It is a schematic diagram of the structure of the super surface unit of the first embodiment of the present invention. DETAILED DESCRIPTION

[0025] Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiments are only used to illustrate the present invention and are not used in limiting the scope of the present invention.In addition, should be understood that after reading the content taught by the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms fall equally within the scope limited by the appended claims of the application.

[0026] The first embodiment of the present invention relates to an antenna capable of selectively controlling reflection and transmission modes based on a metasurface phase control, comprising:

[0027] PIN size gradient metasurface;

[0028] A signal strength acquisition unit is used to acquire the received signal strength;

[0029] A phase control unit, used to obtain a mode control signal and generate a beam steering control signal based on the received signal strength;

[0030] The PIN driving unit is used to control the PIN size gradient metasurface to be placed in the reflection or transmission mode based on the mode control signal, and to drive the PIN size gradient metasurface to adjust the beam deflection angle according to the beam pointing control signal.

[0031] More specifically, the PIN size gradient metasurface includes a PIN size gradient metasurface layer, a first dielectric layer, a signal isolation layer, a second dielectric layer and a PIN array metasurface layer. The PIN size gradient metasurface layer is arranged on the upper surface of the first dielectric layer, the signal isolation layer is arranged between the first dielectric layer and the second dielectric layer, the PIN array metasurface layer is arranged on the lower surface of the second dielectric layer, the PIN driving unit is connected to the PIN size gradient metasurface layer and the PIN array metasurface layer respectively, and the PIN size gradient metasurface layer is connected to the PIN array metasurface layer. The PIN driving unit controls the PIN diode states in the PIN size gradient metasurface layer and the PIN array metasurface layer based on a mode control signal to control the PIN size gradient metasurface to enter a reflection mode state or a transmission mode state.

[0032] When the PIN size gradient metasurface is in the transmission mode, the incident electromagnetic wave is transmitted from the PIN size gradient metasurface layer to the PIN array metasurface layer; when the PIN size gradient metasurface is in the reflection mode, the incident electromagnetic wave is reflected by the PIN size gradient metasurface layer.

[0033] In some preferred embodiments, the PIN size gradient supersurface layer includes four PIN size gradient sub-units, the sizes of the metal patches in the four PIN size gradient sub-units increase uniformly and linearly along one direction, and each metal patch in the PIN size gradient sub-unit is connected to the PIN driving unit through a PIN diode.

[0034] The gap metal patches in the PIN array supersurface layer are evenly distributed on the lower surface of the second dielectric layer, and each gap metal patch in the PIN array supersurface layer is connected to the PIN driving unit through a PIN diode. The number of gap metal patches in the PIN array supersurface layer is the same as the number of metal patches in the PIN size gradient supersurface layer, and the gap metal patches in the PIN array supersurface layer are connected one by one to the metal patches in the PIN size gradient supersurface layer.

[0035] By setting the size of the metal patch in the PIN size gradient metasurface layer to increase uniformly and linearly along one direction, the phase distribution of the PIN size gradient metasurface layer can be constructed as a linear phase gradient distribution. The expression of the linear phase gradient of the PIN size gradient metasurface layer is as follows:

[0036]

[0037] in, is the phase gradient, is the deflection angle.

[0038] Furthermore, a phase acquisition unit can be constructed to collect the reflected wave phase signal or the transmitted wave phase signal and transmit it to the phase control unit. The phase control unit performs a phase difference between the reflected wave phase signal or the transmitted wave phase signal and the expected phase. The phase control unit generates a phase control signal based on the phase difference result and transmits it to the PIN driving unit. The PIN driving unit controls the bias current of the PIN diode in the PIN size gradient metasurface based on the phase control signal to achieve precise control of the phase.

[0039] More specifically, the phase control unit generates a phase control signal based on the phase difference result to control the magnitude of the bias current that needs to be adjusted for the PIN diode. The expression is as follows:

[0040]

[0041] in, is the bias current that needs to be adjusted for the PIN diode at time t, is the phase difference between the measured phase and the expected phase at time t.

[0042] It is also possible to adaptively and dynamically compensate the bias current of the PIN diode by constructing an environmental factor compensation model to improve the phase adjustment accuracy. The expression is as follows:

[0043]

[0044] in, is the bias current compensation, is the reference bias current, is the temperature compensation coefficient, is the temperature disturbance variation, is the humidity compensation coefficient, is the humidity interference variation, is the electromagnetic compensation coefficient, is the variation of electromagnetic interference.

[0045] like Figure 1As shown, this is an embodiment 1 of the present embodiment based on the PIN size gradient metasurface.

[0046] Example 1 includes a phase control unit, a signal strength acquisition unit, a PIN driving unit and a PIN size gradient metasurface. The phase control unit is respectively connected to the signal strength acquisition unit and the PIN driving unit. The PIN driving unit is connected to the PIN size gradient metasurface. The signal strength acquisition unit collects the received signal strength signal and transmits it to the phase control unit. The phase control unit generates a beam pointing control signal based on the received signal strength signal and transmits it to the PIN driving unit. The PIN driving unit controls the beam deflection angle of the PIN size gradient metasurface based on the beam pointing control signal. The phase control unit transmits a mode control signal to the PIN driving unit. The PIN driving unit controls the PIN size gradient metasurface to a reflection mode state or a transmission mode state based on the mode control signal.

[0047] The PIN size gradient metasurface includes a PIN size gradient metasurface layer, a first dielectric layer, a signal isolation layer, a second dielectric layer, and a PIN array metasurface layer. The PIN size gradient metasurface layer is disposed on the upper surface of the first dielectric layer, the signal isolation layer is disposed between the first dielectric layer and the second dielectric layer, and the PIN array metasurface layer is disposed on the lower surface of the second dielectric layer. A PIN driving unit is connected to the PIN size gradient metasurface layer and the PIN array metasurface layer, respectively. The PIN size gradient metasurface layer is connected to the PIN array metasurface layer. The PIN driving unit controls the states of the PIN diodes in the PIN size gradient metasurface layer and the PIN array metasurface layer based on a mode control signal to control the PIN size gradient metasurface to a reflection mode or a transmission mode. When the PIN size gradient metasurface is in the transmission mode, an incident electromagnetic wave is transmitted from the PIN size gradient metasurface layer to the PIN array metasurface layer. When the PIN size gradient metasurface is in the reflection mode, the PIN size gradient metasurface layer reflects the incident electromagnetic wave.

[0048] The PIN size gradient metasurface layer includes four PIN size gradient sub-units. The sizes of the metal patches in the four PIN size gradient sub-units increase uniformly and linearly along one direction, and each metal patch in the PIN size gradient sub-unit is connected to the PIN driving unit through a PIN diode.

[0049] The gap metal patches in the PIN array supersurface layer are evenly distributed on the lower surface of the second dielectric layer, and each gap metal patch in the PIN array supersurface layer is connected to the PIN driving unit through a PIN diode. The number of gap metal patches in the PIN array supersurface layer is the same as the number of metal patches in the PIN size gradient supersurface layer, and the gap metal patches in the PIN array supersurface layer are connected one by one to the metal patches in the PIN size gradient supersurface layer.

[0050] The size of the metal patch in the PIN size gradient metasurface layer is uniformly and linearly increased in one direction, and the phase distribution of the PIN size gradient metasurface layer is constructed as a linear phase gradient distribution. The expression of the linear phase gradient of the PIN size gradient metasurface layer is as follows:

[0051]

[0052] in, is the phase gradient, is the deflection angle.

[0053] like Figure 2 As shown, this is another embodiment 2 of the present embodiment based on the PIN size gradient metasurface.

[0054] Example 2 adds a phase acquisition unit to Example 1. The phase acquisition unit is connected to the phase control unit and is used to collect the reflected wave phase signal or the transmitted wave phase signal and transmit it to the phase control unit. The phase control unit performs a phase difference between the reflected wave phase signal or the transmitted wave phase signal and the expected phase. Based on the phase difference result, the phase control unit generates a phase control signal and transmits it to the PIN drive unit. The PIN drive unit controls the bias current of the PIN diode in the PIN size gradient metasurface based on the phase control signal to adjust the phase.

[0055] The phase control unit generates a phase control signal based on the phase difference result to control the bias current of the PIN diode to be adjusted. The expression is as follows:

[0056]

[0057] in, is the bias current that needs to be adjusted for the PIN diode at time t, is the phase difference between the measured phase and the expected phase at time t.

[0058] This embodiment is based on another embodiment 3 of the PIN size gradient metasurface, and adds an environmental factor compensation model on the basis of embodiment 2.

[0059] By building an environmental factor compensation model, the bias current of the PIN diode is adaptively and dynamically compensated to improve the phase adjustment accuracy. The expression is as follows:

[0060]

[0061] in, is the bias current compensation, is the reference bias current, is the temperature compensation coefficient, is the temperature disturbance variation, is the humidity compensation coefficient, is the humidity interference variation, is the electromagnetic compensation coefficient, is the variation of electromagnetic interference.

[0062] like Figure 3 As shown, this is another embodiment 4 of the present embodiment based on the PIN size gradient metasurface.

[0063] In Example 4, the PIN size gradient unit includes a first PIN size gradient subunit 1, a second PIN size gradient subunit 2, a third PIN size gradient subunit 3, and a fourth PIN size gradient subunit 4. Each PIN size gradient subunit is composed of a plurality of metal patches 5 of different sizes uniformly distributed on the upper surface of the first dielectric layer, and the sizes of the metal patches 5 increase linearly along a direction, thereby forming a PIN size gradient subunit composed of an N×N metal patch array. A linear phase gradient distribution is constructed by uniformly linearly increasing the sizes of the metal patches in the PIN size gradient subunit along a direction. The phase control unit generates a beam pointing control signal based on the received signal strength signal and transmits it to the PIN driving unit. The PIN driving unit controls the beam deflection angle of the PIN size gradient metasurface based on the beam pointing control signal, thereby achieving control of the beam deflection angle.

[0064] Figure 3 In the PIN size gradient subunit, which is composed of an 8×8 metal patch array, the size of the metal patch in the PIN size gradient subunit can be increased according to the linear size function The size of the metal patches in the first PIN size gradient subunit increases linearly along the negative Y-axis and is evenly distributed in the upper right half of the upper surface of the dielectric layer. The size of the metal patches in the second PIN size gradient subunit increases linearly along the negative X-axis and is evenly distributed in the lower right half of the upper surface of the dielectric layer. The size of the metal patches in the third PIN size gradient subunit increases linearly along the positive Y-axis and is evenly distributed in the lower left half of the upper surface of the dielectric layer. The size of the metal patches in the fourth PIN size gradient subunit increases linearly along the positive X-axis and is evenly distributed in the upper left half of the upper surface of the dielectric layer.

[0065] The gap metal patches in the PIN array supersurface layer are evenly distributed on the lower surface of the second dielectric layer, and each gap metal patch in the PIN array supersurface layer is connected to the PIN driving unit through a PIN diode. The number of gap metal patches in the PIN array supersurface layer is the same as the number of metal patches in the PIN size gradient supersurface layer, and the gap metal patches in the PIN array supersurface layer are connected one by one to the metal patches in the PIN size gradient supersurface layer.

[0066] like Figure 4 As shown, the gap metal patch includes a first symmetrical metal patch 602, a second symmetrical metal patch 603 and a rectangular metal patch 601. The rectangular metal patch 601 is located in the middle of the first symmetrical metal patch 602 and the second symmetrical metal patch 603, and there is a gap between the rectangular metal patch 601 and the first symmetrical metal patch 602 and the second symmetrical metal patch 603 respectively. There is a gap between the first symmetrical metal patch 602 and the second symmetrical metal patch 603. The rectangular metal patch 601 is connected to the metal patch in the PIN size gradient metasurface. The rectangular metal patch 601 One end of the rectangular metal patch 601 is connected to the first symmetrical metal patch 602 through the first PIN diode 604, and the other end of the rectangular metal patch 601 is connected to the second symmetrical metal patch 603 through the second PIN diode 605. That is, the positive end of the first PIN diode 604 is connected to the first symmetrical metal patch 602, the negative end of the first PIN diode 604 is connected to one end of the rectangular metal patch 601, the positive end of the second PIN diode 605 is connected to the second symmetrical metal patch 603, and the negative end of the second PIN diode 605 is connected to the other end of the rectangular metal patch 601.

[0067] The PIN diode states in the PIN size gradient metasurface layer and the PIN array metasurface layer are controlled by the PIN driving unit based on the mode control signal to control the PIN size gradient metasurface to enter the reflection mode state or the transmission mode state. For example, when the PIN diode state in the PIN size gradient metasurface layer is controlled to be turned on based on the reflection mode control signal by the PIN driving unit, and the first and second PIN diode states in the PIN array metasurface layer are controlled to be turned off, the PIN size gradient metasurface is controlled to enter the reflection mode state. When the PIN diode state in the PIN size gradient metasurface layer is controlled to be turned off based on the transmission mode control signal by the PIN driving unit, and the first PIN diode state in the PIN array metasurface layer is controlled to be turned off and the second PIN diode state is controlled to be turned on, the PIN size gradient metasurface is controlled to enter the transmission mode state.

[0068] By uniformly increasing the size of the metal patches in the PIN size gradient metasurface layer along one direction, the phase distribution of the PIN size gradient metasurface layer is constructed as a linear phase gradient distribution. Therefore, the expression of the linear phase gradient of the PIN size gradient metasurface layer is as follows:

[0069]

[0070] in, is the phase gradient, is the deflection angle.

[0071] The linear phase gradient distribution of the PIN size gradient metasurface layer allows for rapid and precise control of the beam deflection angle. For example, the signal strength acquisition unit collects the received signal strength signal and transmits it to the phase control unit. If the received signal strength is low, the phase control unit generates a beam pointing control signal based on the received signal strength signal and transmits it to the PIN drive unit. The PIN drive unit then controls the beam deflection angle of the PIN size gradient metasurface based on the beam pointing control signal. The linear phase gradient distribution of the PIN size gradient metasurface layer allows for rapid and precise control of beam deflection, adjusting the beam pointing so that the main lobe is aligned with the target direction, thereby enhancing signal reception strength and significantly improving anti-interference capabilities in harsh environments.

[0072] To precisely control the phase of the signal, a phase acquisition unit can be constructed to collect the reflected wave phase signal or the transmitted wave phase signal and transmit it to the phase control unit. The phase control unit then performs a phase difference between the reflected wave phase signal or the transmitted wave phase signal and the expected phase. Based on the phase difference result, the phase control unit generates a phase control signal and transmits it to the PIN drive unit. The PIN drive unit controls the bias current of the PIN diode in the PIN size gradient metasurface based on the phase control signal to adjust the phase. Therefore, by precisely controlling the bias current of the PIN diode, precise phase control can be achieved.

[0073] The phase control unit generates a phase control signal based on the phase difference result to control the bias current of the PIN diode to be adjusted. The expression is as follows:

[0074]

[0075] in, is the bias current that needs to be adjusted for the PIN diode at time t, is the phase difference between the measured phase and the expected phase at time t.

[0076] For example, the phase acquisition unit collects the phase signal of the transmitted wave and transmits it to the phase control unit. The phase control unit performs phase difference processing on the phase signal of the transmitted wave and the expected phase. The phase control unit generates and calculates the bias current value that needs to be adjusted for the PIN diode based on the phase difference processing result. The phase control unit generates a phase control signal based on the bias current value that needs to be adjusted for the PIN diode and transmits it to the PIN driving unit. The PIN driving unit controls the bias current of the PIN diode in the PIN size gradient metasurface based on the phase control signal, so that the phase of the transmitted wave gradually approaches the expected phase, thereby realizing precise regulation and control of the phase.

[0077] To further improve phase regulation control accuracy, a model for compensating for environmental factors, including temperature, humidity, and electromagnetic interference, is constructed to adaptively and dynamically compensate for the PIN diode's bias current. This adaptive compensation significantly improves phase regulation accuracy.

[0078] The bias current of the PIN diode is adaptively and dynamically compensated by constructing an environmental factor compensation model. The expression is as follows:

[0079]

[0080] in, is the bias current compensation, is the reference bias current, is the temperature compensation coefficient, is the temperature disturbance variation, is the humidity compensation coefficient, is the humidity interference variation, is the electromagnetic compensation coefficient, is the variation of electromagnetic interference.

[0081] A second embodiment of the present invention relates to a detection device comprising the antenna described above.

[0082] Those skilled in the art will clearly understand that, for the sake of convenience and brevity of description, the specific working processes of the systems and units described above can refer to the corresponding processes in the aforementioned method embodiments, and will not be repeated here. The terms "first," "second," and "third" in the specification of this application and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.

[0083] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. An antenna based on metasurface phased-control selective reflection and transmission mode, characterized in that: include: A PIN size gradient metasurface, comprising a PIN size gradient metasurface layer, a first dielectric layer, a signal isolation layer, a second dielectric layer, and a PIN array metasurface layer stacked in sequence, wherein the PIN size gradient metasurface layer comprises four PIN size gradient subunits, each PIN size gradient subunit is uniformly distributed with a plurality of gradient metal patches, and the sizes of the gradient metal patches in the same PIN size gradient subunit uniformly and linearly increase along one direction; A signal strength acquisition unit is used to acquire the received signal strength; A phase control unit, used to obtain a mode control signal and generate a beam steering control signal based on the received signal strength; The PIN driving unit is used to control the switching state of the PIN diodes in the PIN size gradient metasurface layer and the PIN array metasurface layer based on the mode control signal, so as to place the PIN size gradient metasurface in the reflection or transmission mode, and drive the PIN size gradient metasurface to adjust the beam deflection angle according to the beam pointing control signal.

2. The antenna according to claim 1, wherein It also includes a phase acquisition unit for acquiring a reflected wave phase signal or a transmitted wave phase signal; a phase control unit generates a phase control signal based on a phase difference between the acquired phase signal and an expected phase; and a PIN driving unit controls the bias current of a PIN diode in a PIN size gradient metasurface layer to a target size based on the phase control signal, so as to adjust the reflected wave or the transmitted wave to an expected phase.

3. The antenna according to claim 2, wherein: The target size of the PIN diode bias current in the PIN size gradient metasurface layer is expressed as ， in, is the target value of the PIN diode bias current in the PIN size gradient metasurface layer at time t, is the phase difference between the phase signal collected at time t and the expected phase.

4. The antenna according to claim 3, wherein: It also includes an environmental parameter acquisition unit for acquiring environmental parameters; the phase control unit dynamically compensates the target size of the PIN diode bias current in the PIN size gradient super surface layer based on the acquired environmental parameters.

5. The antenna according to claim 4, characterized in that The target size of the PIN diode bias current after compensation is expressed as: ， in, To compensate for the target magnitude of the post-bias current, is the reference bias current, is the temperature compensation coefficient, is the temperature disturbance variation, is the humidity compensation coefficient, is the humidity interference variation, is the electromagnetic compensation coefficient, is the variation of electromagnetic interference.

6. The antenna according to claim 1, wherein The PIN array metasurface layer is evenly distributed with gap metal patches corresponding to the gradient metal patches one by one. Each gap metal patch is connected to the corresponding gap metal patch and is electrically connected to the PIN driving unit through a PIN diode.

7. The antenna according to claim 6, characterized in that The gap metal patch includes a rectangular metal patch connected to the corresponding gradient metal patch, one side of the rectangular metal patch is electrically connected to the first symmetrical metal patch through a PIN diode, and the other side is electrically connected to the second symmetrical metal patch through a symmetrical PIN diode; the first symmetrical metal patch and the second symmetrical metal patch are symmetrical along the central axis of the rectangular metal patch, and gaps are formed between the first symmetrical metal patch, the second symmetrical metal patch and the rectangular metal patch.

8. The antenna according to claim 7, wherein: Based on the mode control signal, the PIN driving unit controls the PIN diode in the PIN size gradient metasurface layer to turn on and the two PIN diodes in the PIN array metasurface layer to turn off, so that the PIN size gradient metasurface is placed in the reflection mode, or controls the PIN diode in the PIN size gradient metasurface layer to turn off and one of the two PIN diodes in the PIN array metasurface layer to turn on and off, so that the PIN size gradient metasurface is placed in the transmission mode.

9. A detection system, characterized in that: The invention comprises the antenna according to any one of claims 1 to 8.

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