A solar cell and photovoltaic module

Abstract

The application discloses a solar cell and a photovoltaic module, and relates to the technical field of photovoltaics, aiming to increase the carrier collection range of a doped semiconductor part along a first direction and improve the carrier collection efficiency of the doped semiconductor part. The solar cell comprises a semiconductor substrate and a doped semiconductor part. The semiconductor substrate has opposite first and second surfaces. The doped semiconductor part is arranged in or on a partial region of the first surface and / or the second surface. The doped semiconductor part comprises a plurality of first doped regions and a plurality of second doped regions. In a single doped semiconductor part, different first doped regions extend along a first direction and are spaced apart along a second direction. The first direction is different from the second direction. The second doped regions are located between at least two adjacent first doped regions, and the two adjacent first doped regions are electrically connected through the second doped regions. In different second doped regions located in the same column along the second direction, the midlines along which at least one pair of adjacent second doped regions extend are not collinear.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of photovoltaic, in particular to a solar cell and a photovoltaic module. BACKGROUND

[0002] The solar cell is a device capable of converting the light energy of the sun into electric energy. Specifically, when the solar cell is in working condition, the sunlight is shone on the solar cell to form new hole-electron pairs. Under the action of the built-in electric field of the p-n junction, the photo-generated holes flow to the p region, and the photo-generated electrons flow to the n region. After the circuit is connected through the electrode structure, the electric current can be generated.

[0003] However, in the existing solar cell, the collection ability of the doped semiconductor part to the carriers is weak, which affects the working performance of the solar cell. SUMMARY

[0004] The purpose of the present application is to provide a solar cell and a photovoltaic module for increasing the carrier collection range of the second doped region in the doped semiconductor part along the first direction, improving the collection efficiency of the doped semiconductor part to the carriers without additional increase of the coverage area of the doped semiconductor part, and further improving the working performance of the solar cell.

[0005] In order to achieve the above purpose, in a first aspect, the present application provides a solar cell, which comprises a semiconductor substrate and a doped semiconductor part. The semiconductor substrate has opposite first and second surfaces. The doped semiconductor part is arranged in or on part of the first surface and / or the second surface. The doped semiconductor part comprises a plurality of first doped regions and a plurality of second doped regions. In a single doped semiconductor part, different first doped regions extend along a first direction and are spaced apart along a second direction. The first direction is different from the second direction. The second doped region is located between at least two adjacent first doped regions, and the two adjacent first doped regions are electrically connected through the second doped region. In different second doped regions located in the same column along the second direction, the midlines of at least one pair of adjacent second doped regions extending along the second direction are not collinear.

[0006] In the working state of the solar cell provided in the application, the semiconductor substrate can absorb photons and generate photo-generated carriers. The doped semiconductor part can shunt and collect the photo-generated carriers and lead them out through the electrode structure electrically connected to the doped semiconductor part to form a photocurrent. The first doped region included in the doped semiconductor part can collect carriers of the same conductivity type as itself in the semiconductor substrate near the first doped region. The second doped region included in the doped semiconductor part is located at least between two adjacent first doped regions. The second doped region not only has the function of collecting carriers itself, but also electrically connects the two adjacent first doped regions to realize shunting and carrier allocation. Through the second doped region, the carriers collected by the first doped region are better converged to the part of the electrode structure arranged on the second doped region, so that the electrode structure can lead the carriers out in time. Moreover, in a single doped semiconductor part, different second doped regions in the same column along the second direction, at least one pair of adjacent second doped regions, the midlines of the second doped regions extending along the second direction are not collinear. At this time, in at least one pair of adjacent second doped regions, the arrangement position of one second doped region relative to the other second doped region is offset along the first direction, which can effectively widen the actual carrier collection range of the second doped regions in the same column, improve the collection efficiency of the doped semiconductor part for carriers, and also enhance the shunting and allocation of the carriers collected by the first doped regions belonging to the same doped semiconductor part. Even when the electrode structure is manufactured on the semiconductor substrate away from the doped semiconductor part, due to process errors, the actual formation position of the electrode structure is offset relative to the initial design position along the first direction, at least one of at least one pair of adjacent second doped regions extending along the second direction can be formed, the contact probability of the electrode structure and the second doped region included in the doped semiconductor part is increased, which is beneficial to improve the adhesion of the electrode structure on the semiconductor substrate, improve the collection efficiency of the electrode structure for current, and improve the working performance of the solar cell.

[0007] As a possible implementation scheme, the first surface and / or the second surface include at least two edge regions oppositely arranged along the second direction. At least one edge region has at least one pair of two second doped regions adjacent along the second direction, and the midlines of the second doped regions extending along the second direction are not collinear.

[0008] On one hand, due to the slicing, film layer deposition quality and other factors, the number of defects in the edge region is relatively large, at this time, the at least one pair of midlines extending along the second direction of the two second doped regions adjacent along the second direction in the at least one edge region are not collinear along the second direction, which can increase the actual carrier collection range of different second doped regions in the same column in the edge region, improve the carrier collection of the doped semiconductor part to the edge region, and reduce the carrier recombination rate at the edge region. On the other hand, the contact probability of the electrode structure on the edge region and the second doped region included in the doped semiconductor part can be increased, the adhesion of the electrode structure on the semiconductor substrate can be increased, and the collection efficiency of the electrode structure to the current can be improved, so that the current generated by the edge region can be discharged in time through the electrode structure, and the working performance of the solar cell is improved. In addition, it can be understood that the part of the semiconductor substrate corresponding to the edge region is provided with the second doped region, and the electrode structure manufactured on the second doped region can converge the carriers collected by the first doped region in electrical contact with the second doped region. At this time, only the intra-string interconnect for realizing the electrical connection of different solar cells needs to be electrically connected with the electrode structure on the second doped region in the edge region, so as to discharge the carriers collected by the first doped region, without the need to set the intra-string interconnect on the part of the semiconductor substrate corresponding to the edge region, thereby reducing the risk of cracks and other problems in the edge of the semiconductor substrate.

[0009] As a possible implementation, the ratio between the width of the edge region and the width of the first surface and / or the second surface of the semiconductor substrate in the second direction is less than or equal to one third. Alternatively, the solar cell comprises a plurality of patterned units distributed along the second direction; the ratio between the width of the edge region and the width of the patterned units in the second direction is less than or equal to one third. In this way, the distribution area of the second doped regions with the midline extending in the second direction not being collinear accounts for a certain proportion, which can prevent the end of the intra-string interconnect from being too close to the edge of the semiconductor substrate due to the small width of the edge region, thereby reducing the risk of the edge of the semiconductor substrate being cracked due to the heat generated by the connection with the intra-string interconnect, and other adverse problems. In addition, it can also prevent the carrier collection range of the doped semiconductor part in the area with a large number of defects from being too small due to the small width of the edge region, thereby reducing the carrier recombination rate. Furthermore, it can also prevent the electrode structure located on the second doped region from being too long due to the large width of the edge region, thereby reducing the transmission loss and recombination loss. In addition, it can also prevent the electrode structure from being deformed above one of the second doped regions due to the excessive number of settings of two adjacent second doped regions in the same column along the second direction, the two adjacent second doped regions having the midline extending in the second direction not being collinear along the first direction, thereby increasing the contact probability of the electrode structure with the second doped region included in the doped semiconductor part, increasing the adhesion of the electrode structure on the semiconductor substrate, and improving the current collection efficiency of the electrode structure, ensuring that the current generated by the edge region can be timely guided out through the electrode structure, and improving the working performance of the solar cell.

[0010] As a possible implementation, the first surface and / or the second surface further comprises a middle region located between two edge regions oppositely arranged along the second direction. The spacing between the midlines extending in the second direction of at least one pair of two second doped regions adjacent along the second direction in at least one edge region along the first direction is greater than the spacing between the midlines extending in the second direction of at least one pair of two second doped regions adjacent along the second direction in the middle region along the first direction.

[0011] As described above, due to factors such as film layer formation quality and cutting damage, the number of defects in at least one edge region is greater than the number of defects in the middle region. Therefore, by setting the spacing between the midlines extending in the second direction of at least one pair of two second doped regions adjacent along the second direction in at least one edge region along the first direction to a large value, the carrier collection range of the two second doped regions adjacent along the second direction in the edge region in the first direction can be increased, the carrier collection capacity of the second doped regions in the same column in the edge region can be enhanced, and the carrier recombination rate of the edge region can be reduced.

[0012] As a possible implementation, in the at least one pair of second doped regions along the second direction and not collinear along the middle line extending in the second direction, one of the second doped regions above is a first region, and one of the second doped regions below is a second region. The middle line extending in the second direction of the first region is offset from the middle line extending in the second direction of the second region by a distance d1 in the first direction. The width of the second doped region in the first direction is d2. Wherein, d1≥10μm; and / or, d2-d1>100μm; and / or, the ratio of d1 and d2 is greater than or equal to 10% and less than or equal to 95%; and / or, in each pair of second doped regions along the second direction and not collinear along the middle line extending in the second direction, the two boundaries of the different first regions are aligned in the first direction; and / or, in each pair of second doped regions along the second direction and not collinear along the middle line extending in the second direction, the two boundaries of the different second regions are aligned in the first direction.

[0013] d1 in the above range is conducive to preventing the improvement effect of carrier collection arrangement and the like caused by d1 being too small from being not obvious, and also conducive to matching d1 with the process error in actual manufacturing of the electrode structure, so as to facilitate the electrode structure to be shaped on at least one of the at least one pair of adjacent second doped regions along the second direction and not collinear along the middle line extending in the second direction, increase the contact probability of the electrode structure and the second doped regions included in the doped semiconductor part, and facilitate to improve the adhesion of the electrode structure on the semiconductor substrate and the collection efficiency of the electrode structure to the current.

[0014] In addition, when the difference between d2 and d1 is in the above range, it is conducive to preventing the proportion of the overlapping area between the different second doped regions in the same column along the second direction in the first direction from being too small due to d1 being too large, so as to realize effective carrier arrangement of the connected first doped regions, facilitate the width of the overlapping area in the first direction to be less than or equal to the process error in manufacturing the electrode structure, so as to facilitate the electrode structure to be shaped on each of the at least one pair of adjacent second doped regions along the second direction and not collinear along the middle line extending in the second direction, increase the contact probability of the electrode structure and the second doped regions included in the doped semiconductor part, and facilitate to improve the adhesion of the electrode structure on the semiconductor substrate and the collection efficiency of the electrode structure to the current.

[0015] Secondly, the ratio of d1 and d2 in the above range can prevent the carrier collection range of the different second doped regions in the same column in the first direction from being too small due to the ratio of d1 and d2 being too small, realize effective carrier arrangement of the connected first doped regions, and improve the carrier collection and arrangement efficiency of the different second doped regions in the same column in the first direction. It can also prevent the width of the overlapping area between the two adjacent second doped regions along the second direction from being too narrow due to the ratio being too large, facilitate to increase the contact area of the electrode structure and the second doped regions, and improve the contact performance therebetween.

[0016] In addition, in each pair of second doped regions in which the center lines extending in the second direction are not collinear, when two boundaries of different first regions arranged opposite in the first direction are aligned, the structural pattern corresponding to the doped semiconductor portion is more regular, which is conducive to reducing the process difficulty of manufacturing the doped semiconductor portion and improving the yield of the solar cell. In addition, it can also prevent the width of at least one second doped region from being too large or too small due to the staggered arrangement of the two boundaries of different first regions arranged opposite in the first direction, which leads to high parasitic absorption or high carrier recombination rate, thereby improving the working performance of the solar cell.

[0017] Furthermore, the application principle of the beneficial effect that the two boundaries of different second regions arranged opposite in the first direction are aligned in each pair of second doped regions in which the center lines extending in the second direction are not collinear is the same as that of the beneficial effect that the two boundaries of different first regions arranged opposite in the first direction are aligned in each pair of second doped regions in which the center lines extending in the second direction are not collinear, and will not be repeated here.

[0018] As a possible implementation scheme, in different second doped regions in the same column in the second direction, a plurality of pairs of second doped regions are arranged in which the center lines extending in the second direction are not collinear, and in the second direction, every three adjacent second doped regions in the plurality of pairs of second doped regions form a group of second doped regions; the three second doped regions belonging to the same group of second doped regions are sequentially defined as a first region, a second region, and a third region in the second direction. In at least one group of second doped regions, the center line extending in the second direction of the first region and the center line extending in the second direction of the third region are both distributed on the same side of the center line extending in the second direction of the second region; and / or, in at least one group of second doped regions, the center line extending in the second direction of the first region and the center line extending in the second direction of the third region are both offset from the center line extending in the second direction of the second region by a distance in the first direction, and the ratio of the distances is greater than or equal to 0.8 and less than or equal to 1.2.

[0019] In a single doped semiconductor portion, the same electrode structure manufactured by the same process has the same direction of positional offset caused by process errors, so when the center line extending in the second direction of at least one first region and the center line extending in the second direction of the third region are both distributed on the same side of the center line extending in the second direction of the second region in at least one group of second doped regions, the offset directions of the second doped regions in the single doped semiconductor portion are consistent, which is conducive to enabling the same electrode structure to be formed on at least one second doped region in the single doped semiconductor portion, which is offset in the same direction relative to the center line extending in the second direction of the other second doped region adjacent thereto, increasing the contact probability of the electrode structure with the different second doped region in the doped semiconductor portion in which the center line is offset, improving the adhesion of the electrode structure on the semiconductor substrate, and improving the current collection efficiency of the electrode structure, thereby improving the working performance of the solar cell.

[0020] In addition, when the ratio of the distance by which the middle line extending along the second direction of the first region and the middle line extending along the second direction of the third region are offset relative to the middle line extending along the second direction of the second region along the first direction is greater than or equal to 0.8 and less than or equal to 1.2 in at least one of the second doped regions, the offset distances of the different second doped regions with the middle line offset are approximately the same, which prevents the process error during the manufacturing of the electrode structure from being greater than the offset distance due to the offset distance of the single second doped region being too large or too small, so that the electrode structure is not formed on the second doped region, which facilitates increasing the contact probability of the electrode structure and the different second doped regions with the middle line offset in the doped semiconductor portion, facilitating improving the adhesion of the electrode structure on the semiconductor substrate, and improving the current collection efficiency of the electrode structure, and improving the working performance of the solar cell.

[0021] As a possible implementation, in the doped semiconductor portion, no second doped region is arranged between at least one pair of adjacent first doped regions. In this way, the electrode structure can be formed between the at least one pair of adjacent first doped regions, which can reduce the recombination loss between the electrode structure and the semiconductor substrate. At the same time, the carriers collected by the first doped region can be directly conducted out through the electrode structure electrically connected thereto, without being conducted to the second doped region and the electrode structure electrically connected to the second doped region, which reduces the transmission loss and facilitates improving the conversion efficiency of the solar cell.

[0022] As a possible implementation, in the different second doped regions located in the same column along the second direction, the widths of the two adjacent second doped regions with the middle lines extending along the second direction not being collinear are approximately equal. In this way, the two adjacent second doped regions with the middle lines extending along the second direction not being collinear both have a larger width, which facilitates the shunting and collection of carriers, and also reduces the ratio between the corresponding process error during the manufacturing of the electrode structure and the width of the second doped region along the first direction, that is, even if the actual forming position of the electrode structure is offset relative to the initial design position along the first direction due to the process error, the actual electrode structure is offset from the middle line extending along the second direction of the second doped region by a smaller distance due to the smaller process error (relative to the width of the second doped region), and the width of the second doped region is larger, so that the electrode structure can be formed on each of the two adjacent second doped regions with the middle lines extending along the second direction not being collinear, which increases the contact probability of the electrode structure and the second doped regions included in the doped semiconductor portion, facilitates improving the adhesion of the electrode structure on the semiconductor substrate, and improves the current collection efficiency of the electrode structure, and improves the working performance of the solar cell.

[0023] As a possible implementation, in the single doped semiconductor portion, lengths of the different first doped regions are substantially equal. At this time, the carrier collection capability of the first doped regions arranged on the different regions of the semiconductor substrate along the second direction on the first surface and / or the second surface is substantially the same, which facilitates that the carriers generated by the different regions can be collected by the first doped regions in time and conducted to the electrode structure electrically connected to the second doped region, reduces the carrier recombination rate, and improves the conversion efficiency of the solar cell.

[0024] As a possible implementation, in the different doped semiconductor portions, a ratio of lengths of the different first doped regions is greater than or equal to 0.5 and less than or equal to 1.5. At this time, the lengths of the different first doped regions can be set according to actual needs, which improves the applicability of the solar cell provided by the present application in different application scenarios.

[0025] As a possible implementation, in the same doped semiconductor portion, the projection of each of the two adjacent second doped regions along the second direction on the first doped region overlaps. At this time, the electrode structure can be arranged on each of the two adjacent second doped regions through the overlapping part of the projection of each of the two adjacent second doped regions along the second direction on the first doped region, which can increase the contact area of the electrode structure and the second doped region and improve the contact performance therebetween.

[0026] As a possible implementation, in the different second doped regions located in the same row along the first direction and having the same conductivity type, the middle lines along the second direction of at least one pair of adjacent second doped regions are distributed on the same side of the middle lines along the second direction of the other second doped regions adjacent to the at least one pair of adjacent second doped regions along the second direction. The application principle of the beneficial effects in this case can refer to the application principle of the beneficial effects that the middle line along the second direction of the at least one first region and the middle line along the second direction of the third region are distributed on the same side of the middle line along the second direction of the second region in the at least one group of second doped regions, which will not be described herein again.

[0027] As a possible implementation, in the different second doped regions located in the same row along the first direction and having the same conductivity type, a ratio of distances by which the middle lines along the second direction of at least one pair of adjacent second doped regions are offset relative to the middle lines along the second direction of the other second doped regions adjacent to the at least one pair of adjacent second doped regions along the second direction along the first direction is greater than or equal to 0.8 and less than or equal to 1.2. The application principle of the beneficial effects in this case can refer to the application principle of the beneficial effects that the ratio of distances by which the middle line along the second direction of the at least one first region and the middle line along the second direction of the third region are offset relative to the middle line along the second direction of the second region along the first direction is greater than or equal to 0.8 and less than or equal to 1.2 in the at least one group of second doped regions, which will not be described herein again.

[0028] As a possible implementation, the doped semiconductor portion includes a first doped semiconductor portion and a second doped semiconductor portion having opposite conductive types. One of the first doped semiconductor portion and the second doped semiconductor portion is disposed on the first surface of the semiconductor substrate, and the other is disposed on the second surface of the semiconductor substrate. In one of the first doped semiconductor portion and the second doped semiconductor portion, different second doped regions in the same column in the second direction are included, and at least one pair of adjacent second doped regions has a common line of midpoints of the second doped regions in the second direction. In the other of the first doped semiconductor portion and the second doped semiconductor portion, different second doped regions in the same column in the second direction are included, and at least one pair of adjacent second doped regions has a common line of midpoints of the second doped regions in the second direction.

[0029] As a possible implementation, the doped semiconductor portion includes a first doped semiconductor portion and a second doped semiconductor portion having opposite conductive types. At least part of the first doped semiconductor portion and at least part of the second doped semiconductor portion are spaced apart in the first direction. In one of the first doped semiconductor portion and the second doped semiconductor portion, different second doped regions in the same column in the second direction are included, and at least one pair of adjacent second doped regions has a common line of midpoints of the second doped regions in the second direction. In the other of the first doped semiconductor portion and the second doped semiconductor portion, different second doped regions in the same column in the second direction are included, and at least one pair of adjacent second doped regions has a common line of midpoints of the second doped regions in the second direction.

[0030] As a possible implementation, in the single first doped semiconductor portion and / or the single second doped semiconductor portion, in a case where the common line of midpoints of the second doped regions adjacent in the second direction extends in the second direction, the length of the first doped region adjacent in the first direction to the second doped region having the common line of midpoints of the second doped regions extending in the second direction is greater than the length of the first doped region adjacent in the first direction to the second doped region not having the common line of midpoints of the second doped regions extending in the second direction. Alternatively, in the first doped region adjacent in the first direction to the second doped region not having the common line of midpoints of the second doped regions extending in the second direction, the length of part of the first doped region is equal to the length of the first doped region adjacent in the first direction to the second doped region having the common line of midpoints of the second doped regions extending in the second direction, and the length of the remaining first doped region is greater than the length of the first doped region adjacent in the first direction to the second doped region having the common line of midpoints of the second doped regions extending in the second direction.

[0031] In the single first doped semiconductor part and / or the single second doped semiconductor part, not only the at least one pair of two second doped regions adjacent to each other and extending along the second direction have the midlines extending along the second direction not collinear to increase the contact probability of the electrode structure and the second doped regions included in the doped semiconductor part, but also the multiple second doped regions adjacent to each other along the second direction have the midlines extending along the second direction collinear, and the length of the first doped region adjacent to the second doped region along the first direction and collinear to the midline extending along the second direction is greater than the length of the first doped region adjacent to the second doped region along the first direction and not collinear to the midline extending along the second direction, that is, the length of the first doped region at the part where the electrode structure is not prone to positional deviation is not required, which is conducive to making the first doped region at the part where the electrode structure is not prone to positional deviation have higher carrier shunting and collecting capacity, reducing the carrier recombination rate, and improving the conversion efficiency of the solar cell.

[0032] When, in the first doped region adjacent to the second doped region along the first direction and not collinear to the midline extending along the second direction, the length of part of the first doped region is equal to the length of the first doped region adjacent to the second doped region along the first direction and collinear to the midline extending along the second direction, and the length of the remaining first doped region is greater than the length of the first doped region adjacent to the second doped region along the first direction and collinear to the midline extending along the second direction, another example of the solar cell provided by the present application is provided, which can improve the applicability of the solar cell provided by the present application in different application scenarios. Moreover, whether the midlines extending along the second direction of the different second doped regions located in the same column along the second direction are collinear or not collinear can be regulated by adjusting the length of the first doped region adjacent to the second doped region along the first direction, thereby reducing the manufacturing difficulty.

[0033] As a possible implementation scheme, the first doped semiconductor part and the second doped semiconductor part are arranged on a first surface of a semiconductor substrate. The region corresponding to the region arranged between the first doped semiconductor part and the second doped semiconductor part in the first surface is a spacing region. In the at least one pair of second doped regions not collinear to the midlines extending along the second direction, the second doped region arranged on the upper layer along the second direction and / or the second doped region arranged on the lower layer along the second direction has the spacing regions on both sides along the first direction with equal widths; or, in the at least one pair of second doped regions not collinear to the midlines extending along the second direction, the second doped region arranged on the upper layer along the second direction and / or the second doped region arranged on the lower layer along the second direction has the spacing regions on both sides along the first direction with unequal widths.

[0034] In the at least one pair of second doped regions whose center lines extending along the second direction are not collinear, when the widths of the spacing regions on the same side of the different second doped regions located on the upper layer along the second direction and / or the different second doped regions located on the lower layer along the second direction are equal, the pattern corresponding to the spacing regions is more regular, which can prevent the isolation effect of the spacing regions from being affected by the small width of a single position, and is conducive to reducing the carrier recombination rate between the first doped semiconductor part and the second doped semiconductor part.

[0035] When the widths of the spacing regions on the same side of the different second doped regions located on the upper layer along the second direction and / or the different second doped regions located on the lower layer along the second direction are not equal, the center lines extending along the second direction of the at least one pair of adjacent second doped regions along the second direction can be made not collinear by adjusting the widths of the spacing regions.

[0036] As a possible implementation, in the different second doped regions located on the same column along the second direction, when there are multiple pairs of adjacent second doped regions whose center lines extending along the second direction are not collinear, in each pair of second doped regions whose center lines extending along the second direction are not collinear, the widths of the spacing regions on the same side of the different second doped regions located on the upper layer along the second direction are equal; and / or, the widths of the spacing regions on the same side of the different second doped regions located on the lower layer along the second direction are equal.

[0037] When the widths of the spacing regions on the same side of the different second doped regions on the upper layer along the first direction are equal, the widths of the spacing regions at different positions are set more regularly, which can reduce the process difficulty of manufacturing the solar cell and improve the yield of the solar cell. In addition, in the case where the center lines extending along the second direction of at least one pair of adjacent second doped regions along the second direction are not collinear by adjusting the widths of the spacing regions, when the widths of the spacing regions on the same side of the different second doped regions on the upper layer (and / or the lower layer) along the first direction are equal, it is also beneficial to make the center line extending along the second direction of at least one second doped region and the center line extending along the second direction of another second doped region separated by one second doped region from itself, both of which are distributed on the same side of the center lines extending along the second direction of the other second doped regions adjacent to themselves along the second direction, that is, the offset direction of the second doped regions in a single doped semiconductor part is consistent, which is beneficial to make the same electrode structure be formed in at least a single doped semiconductor part, increase the contact probability of the electrode structure and the different second doped regions with center line offset in the doped semiconductor part on the different second doped regions with the same offset direction of the center lines extending along the second direction of the other second doped regions adjacent to themselves along the second direction, improve the adhesion of the electrode structure on the semiconductor substrate, and improve the current collection efficiency of the electrode structure and the working performance of the solar cell.

[0038] As a possible implementation scheme, the solar cell further comprises an electrode structure arranged on the side of the doped semiconductor part away from the semiconductor substrate. In the case where the widths of the spacing regions on both sides of the second doped regions along the first direction are not equal in at least one pair of second doped regions with the center lines extending along the second direction not collinear, the distance between the second doped region and the spacing region with a larger width and the electrode structure along the first direction is d3, and the distance between the second doped region and the spacing region with a smaller width and the electrode structure along the first direction is d4. d3 < d4. In this way, the electrode structure is closer to the spacing region with a larger width along the first direction, and the electrode structure can be isolated from the first doped semiconductor part or the second doped semiconductor part with a conductive type opposite to itself through the spacing region with a larger width, which prevents short circuit and improves the electrical reliability of the solar cell.

[0039] As a possible implementation, the middle lines extending along the second direction are not collinear, and among the at least one pair of two second doped regions adjacent along the second direction, the width of one of the two interval regions adjacent along the first direction of the second doped region located at the upper layer and located at the same side of the middle line extending along the second direction of the second doped region located at the lower layer is greater than the width of the other. In this way, even if the electrode structure on the second doped region is offset along the first direction, it can be isolated by the larger interval region and the first doped semiconductor part or the second doped semiconductor part of the opposite conduction type, to prevent short circuit and improve the electrical reliability of the solar cell.

[0040] As a possible implementation, among the different second doped regions located at the same row along the first direction and of the same conduction type, the ratio of the width of the interval region located at the same side of at least one pair of two second doped regions adjacent along the first direction is greater than or equal to 0.8 and less than or equal to 1.2.

[0041] The different electrode structures on the second doped regions located at different columns along the second direction are formed by using the same manufacturing equipment, so the offset of the different electrode structures along the first direction is roughly the same. When the ratio of the width of the interval region located at the same side of at least one pair of two second doped regions adjacent along the first direction is greater than or equal to 0.8 and less than or equal to 1.2, the different electrode structures on the second doped regions located at different columns along the second direction can be isolated by the interval regions of roughly the same width and the first doped semiconductor part or the second doped semiconductor part of the opposite conduction type, to prevent short circuit.

[0042] As a possible implementation, among the different second doped regions located at the same column along the second direction and included in only one of the first doped semiconductor part and the second doped semiconductor part, in the case that the middle lines extending along the second direction of at least one pair of adjacent second doped regions are not collinear, at least one end of the different first doped regions located at the same column along the second direction and included in the other of the first doped semiconductor part and the second doped semiconductor part is flush along the first direction. In this way, another example of the solar cell provided by the present application is provided, to improve the applicability of the solar cell provided by the present application in different application scenarios. Moreover, the structure pattern corresponding to the first doped semiconductor part and the second doped semiconductor part can be reduced, to reduce the process difficulty of manufacturing the solar cell.

[0043] As a possible implementation, at least part of the region of the first doped semiconductor portion is electrically connected with at least part of the region of the second doped semiconductor portion. In this way, the hot spot risk of the solar cell is reduced, and the burnout resistance of the solar cell is improved.

[0044] In a second aspect, the present application provides a photovoltaic module, comprising: a cell string and an encapsulation layer. The cell string is formed by electrically connecting a plurality of solar cells as provided in the first aspect and various implementation forms thereof. The encapsulation layer covers the surface of the cell string.

[0045] The beneficial effects of the second aspect and various implementation forms thereof in the present application can be analyzed with reference to the beneficial effects in the first aspect and various implementation forms thereof, which will not be repeated here. BRIEF DESCRIPTION OF DRAWINGS

[0046] The accompanying drawings, which are included to provide a further understanding of the present application, form a part of the present application and are used to explain the preferred embodiments of the present application and its principles, and do not constitute improper limitations on the present application. In the drawings:

[0047] Figure 1 Longitudinal sectional view of the structure of the solar cell provided for the embodiment of the present application Figure One ;

[0048] Figure 2 Longitudinal sectional view of the structure of the solar cell provided for the embodiment of the present application Figure Two ;

[0049] Figure 3 Longitudinal sectional view of the structure of the solar cell provided for the embodiment of the present application Figure Three ;

[0050] Figure 4 Longitudinal sectional view of the structure of the solar cell provided for the embodiment of the present application Figure Four ;

[0051] Figure 5 Longitudinal sectional view of the structure of the solar cell provided for the embodiment of the present application Figure Five ;

[0052] Figure 6 Longitudinal sectional view of the structure of the solar cell provided for the embodiment of the present application Figure Six ;

[0053] Figure 7 Longitudinal sectional view of the structure of the solar cell provided for the embodiment of the present application Figure Seven ;

[0054] Figure 8 Longitudinal sectional view of the structure of the solar cell provided for the embodiment of the present application Figure Eight ;

[0055] Figure 9 A schematic diagram of the distribution of the doped semiconductor portion in a solar cell according to an embodiment of the present application Figure One

[0056] Figure 10 A schematic diagram of the distribution of the doped semiconductor portion in a solar cell according to an embodiment of the present application Figure Two

[0057] Figure 11 A schematic diagram of the distribution of the doped semiconductor portion in a solar cell according to an embodiment of the present application Figure Three

[0058] Figure 12 A schematic diagram of the distribution of the doped semiconductor portion in a solar cell according to an embodiment of the present application Figure Four

[0059] Figure 13 A schematic diagram of the distribution of the doped semiconductor portion in a solar cell according to an embodiment of the present application Figure Five

[0060] Figure 14 A schematic diagram of the distribution of the doped semiconductor portion in a solar cell according to an embodiment of the present application Figure Six

[0061] The reference numerals: 11 is a semiconductor substrate, 12 is a doped semiconductor portion, 13 is a first doped region, 14 is a second doped region, 15 is an electrode structure, 16 is a first doped semiconductor portion, 17 is a second doped semiconductor portion, 18 is a spacer region, 19 is an interface passivation layer. DETAILED DESCRIPTION

[0062] Hereinafter, embodiments of the present application will be described with reference to the accompanying drawings. It is to be understood, however, that the description is merely exemplary of the present application, but not intended to limit the scope of the present application. Furthermore, in the following description, well-known functions or constructions are not described in detail since they would obscure the application in unnecessary detail.

[0063] In the drawings, various schematic diagrams according to embodiments of the present application are shown. These diagrams are not drawn to scale, in which certain details are exaggerated for the purpose of clarity, and certain details can be omitted. The shapes of various regions, layers, and the relative sizes and positional relationships among them shown in the diagrams are merely exemplary, and in actuality, they can deviate due to manufacturing tolerances or technical limitations, and a person skilled in the art can additionally design regions / layers with different shapes, sizes, and relative positions according to actual needs.

[0064] ​​​​​​In the context of the present application, when one layer / element is referred to as being "on" another layer / element, it can be directly on the other layer / element or there can be intervening layers / elements therebetween. Also, if one layer / element is on another layer / element in one orientation, it can be under the other layer / element when the orientation is reversed. In order to make the technical problems to be solved, technical solutions and beneficial effects of the present application clearer, further detailed description will be made in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and should not be used to limit the present application.

[0065] In addition, the terms "first", "second", etc. are used only for descriptive purposes and should not be construed as indicating or implying relative importance or an indicated number of the technical features. Therefore, the features defined with "first", "second", etc. can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise explicitly and specifically limited. The meaning of "several" is one or more, unless otherwise explicitly and specifically limited.

[0066] In the description of the present application, it should be noted that, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0067] A solar cell is a device capable of converting solar light energy into electrical energy. Specifically, when the solar cell is in working condition, sunlight shines on the solar cell to form new hole-electron pairs. Under the action of the built-in electric field of the p-n junction, the photo-generated holes flow to the p region, and the photo-generated electrons flow to the n region. After the circuit is connected through the electrode structure, current can be generated.

[0068] However, when manufacturing the electrode structure on the existing solar cell by using screen printing process and the like, due to the existence of process errors, the electrode structure is prone to deviate from the p region and / or the n region, which affects the collection of the electrode structure on the current and the adhesion of the battery structure on the semiconductor substrate, and further affects the working performance of the solar cell.

[0069] To solve the above technical problems, in a first aspect, an embodiment of the present application provides a solar cell. The solar cell can be a dual-sided contact cell, i.e., one of the positive electrode and the negative electrode of the solar cell is arranged on the front side of the cell, and the other is arranged on the back side of the cell. Alternatively, the solar cell can also be a back contact cell, i.e., both the positive electrode and the negative electrode of the solar cell are arranged on the back side of the cell.

[0070] As shown in Figures 1 to 5 , the solar cell comprises a semiconductor substrate 11 and a doped semiconductor portion 12. The semiconductor substrate 11 has opposite first and second faces. The doped semiconductor portion 12 is arranged in or on a partial region of the first face and / or the second face.

[0071] The semiconductor substrate and the doped semiconductor portion are the main functional units of the solar cell. In the working state of the solar cell, the semiconductor substrate can absorb photons and generate photo-generated carriers. The doped semiconductor portion can split and collect the photo-generated carriers, and be led out through the electrode structure electrically connected to the doped semiconductor portion to form a photoelectric current. The semiconductor substrate can only include a semiconductor substrate on which no structure is formed; alternatively, the semiconductor substrate can also include a semiconductor substrate and various functional layers (for example, a surface passivation layer and / or an anti-reflection layer, etc.) located on the semiconductor substrate. The structure and material of the semiconductor substrate are not specifically limited in the embodiments of the present application.

[0072] The second face of the semiconductor substrate can correspond to the front side (i.e., the directly illuminated face) of the solar cell, and the first face of the semiconductor substrate can correspond to the back side of the solar cell. The specific arrangement position of the doped semiconductor portion on the semiconductor substrate can be set according to the type of the solar cell and actual needs.

[0073] For example, as shown in Figures 1 to 3 , in the case of a dual-sided contact cell, the doped semiconductor portion 12 can be arranged only on the first face of the semiconductor substrate 11; alternatively, the doped semiconductor portion 12 can be arranged only on the second face of the semiconductor substrate 11; or the doped semiconductor portion 12 can be arranged on both the first face and the second face of the semiconductor substrate 11.

[0074] In the case of a dual-sided contact cell, the doped semiconductor portion can be arranged in a partial region of the first face and / or the second face of the semiconductor substrate, or can be arranged on a partial region of the first face and / or the second face.

[0075] In addition, if the solar cell is a double-sided contact cell, the solar cell may further include another doped semiconductor portion having a conductivity type opposite to that of the doped semiconductor portion (using the doped semiconductor portion as an example for explanation as an N-type doped semiconductor portion). One of the N-type doped semiconductor portion and the P-type doped semiconductor portion is disposed in or on a first plane of the semiconductor substrate, and the other is disposed in or on a second plane of the semiconductor substrate.

[0076] Of course, when the solar cell is a double-sided contact cell and the conductivity type of the doped semiconductor portion is opposite to that of the semiconductor substrate, the solar cell may not include another doped semiconductor portion with a conductivity type opposite to that of the doped semiconductor portion.

[0077] When the doped semiconductor portion is a doped semiconductor layer disposed on a semiconductor substrate, the material of the doped semiconductor layer may include any semiconductor material such as silicon, silicon germanium, germanium, or gallium arsenide. In terms of the arrangement of the material, the crystalline phase of the doped semiconductor layer may be amorphous, microcrystalline, nanocrystalline, single crystal, or polycrystalline.

[0078] like Figure 6 As shown, when the doped semiconductor portion 12 is a doped semiconductor layer disposed on the semiconductor substrate 11, the doped semiconductor layer can be directly disposed on the semiconductor substrate 11. Alternatively, the solar cell may further include an interface passivation layer 19 disposed between the semiconductor substrate 11 and the doped semiconductor layer. In this case, the passivation contact structure composed of the interface passivation layer 19 and the doped semiconductor layer has an excellent interface passivation effect and can achieve selective collection of carriers, reduce the carrier recombination rate on the surface of the corresponding area of ​​the semiconductor substrate 11 where the doped semiconductor layer is disposed, and further improve the photoelectric conversion efficiency of the solar cell. The material and thickness of the interface passivation layer 19 can be set according to the material of the doped semiconductor layer and actual needs. For example: when the material of the doped semiconductor layer is doped polycrystalline silicon, the interface passivation layer is a tunneling passivation layer. For another example: when the material of the doped semiconductor layer includes at least one of doped amorphous silicon, doped microcrystalline silicon and doped nanocrystalline silicon, the interface passivation layer is an intrinsic amorphous silicon layer, an intrinsic microcrystalline silicon layer, an intrinsic nanocrystalline silicon layer or a mixed layer of the above three.

[0079] In the case where the solar cell includes two doped semiconductor portions of opposite conductivity types, which are respectively arranged on the first and second surfaces of the semiconductor substrate, an interface passivation layer may be provided only between the first surface of the semiconductor substrate and the doped semiconductor portion. Alternatively, an interface passivation layer may be provided only between the second surface of the semiconductor substrate and the doped semiconductor portion. Alternatively, an interface passivation layer may be provided both between the first surface of the semiconductor substrate and the doped semiconductor portion and between the second surface of the semiconductor substrate and the doped semiconductor portion.

[0080] When the interface passivation layer is provided between the first surface of the semiconductor substrate and the doped semiconductor portion, and between the second surface of the semiconductor substrate and the doped semiconductor portion, the type of the selective contact structure formed by the doped semiconductor portion and the interface passivation layer provided on the first surface can be the same as or different from the type of the second selective contact structure formed by the doped semiconductor portion and the interface passivation layer provided on the second surface.

[0081] For example, when the solar cell is a bifacial contact solar cell, the doped semiconductor portion includes a first doped semiconductor portion and a second doped semiconductor portion having opposite conductive types. One of the first doped semiconductor portion and the second doped semiconductor portion is provided on the first surface of the semiconductor substrate, and the other is provided on the second surface of the semiconductor substrate.

[0082] For example, as shown in Figure 4 and Figure 5 , when the solar cell is a back contact solar cell, the doped semiconductor portion 12 includes a first doped semiconductor portion 16 and a second doped semiconductor portion 17 having opposite conductive types and provided on the first surface of the semiconductor substrate 11. The specific conductive types of the first doped semiconductor portion 16 and the second doped semiconductor portion 17 can be set according to actual needs, which are not limited herein.

[0083] At least part of the first doped semiconductor portion and at least part of the second doped semiconductor portion can be distributed in an interval.

[0084] For example, as shown in Figure 4 and Figure 5 , the first doped semiconductor portion 16 and the second doped semiconductor portion 17 can be distributed in an interval along the first direction. The first doped semiconductor portion 16 can be a doped region provided in a partial region of the first surface of the semiconductor substrate 11, or a doped semiconductor layer provided on the partial region of the first surface. As for the second doped semiconductor portion 17, the second doped semiconductor portion 17 can be a doped region provided in a partial region of the first surface of the semiconductor substrate 11, or a doped semiconductor layer provided on the partial region of the first surface. In addition, the region of the first surface corresponding to the interval between the first doped semiconductor portion 16 and the second doped semiconductor portion 17 is defined as the interval region 18.

[0085] Alternatively, the sidewalls of a partial area of ​​the first doped semiconductor portion and a partial area of ​​the second doped semiconductor portion may be electrically connected to help reduce the risk of hot spots in the solar cell. The first doped semiconductor portion may be a doped region disposed in a local area of ​​the first surface of the semiconductor substrate, or a doped semiconductor layer disposed on a local area of ​​the first surface. As for the second doped semiconductor portion, the second doped semiconductor portion may be a doped region disposed in a local area of ​​the first surface of the semiconductor substrate, or a doped semiconductor layer disposed on a local area of ​​the first surface. Furthermore, the region between the remaining regions of the first doped semiconductor portion and the remaining regions of the second doped semiconductor portion in the first surface is defined as a spacing region.

[0086] Or, if Figure 7 and Figure 8 As shown, the first doped semiconductor portion 16 can be disposed in a local area or on the first surface of the semiconductor substrate 11. The second doped semiconductor portion 17 is disposed in a local area of ​​the first surface and extends to cover a portion of the first doped semiconductor portion 16. In addition, the area on the first surface corresponding to the overlap of the first doped semiconductor portion 16 and the second doped semiconductor portion 17 is defined as a spacer 18. Figure 7 As shown, in the spacer 18, an insulating layer may be provided between the first doped semiconductor portion 16 and the second doped semiconductor portion 17 to electrically insulate the two, reduce the carrier recombination rate, and improve the conversion efficiency of the solar cell; or Figure 8 As shown, the insulating layer may not be provided between the first doped semiconductor portion 16 and the second doped semiconductor portion 17 , so as to reduce the risk of hot spots in the solar cell.

[0087] When the first doped semiconductor portion and the second doped semiconductor portion are both doped semiconductor layers arranged on the first surface of the semiconductor substrate, the materials of the first doped semiconductor portion and the second doped semiconductor portion may be the same or different. For example, the materials of the first doped semiconductor portion and the second doped semiconductor portion may both be doped polycrystalline silicon. For another example, the materials of the first doped semiconductor portion and the second doped semiconductor portion may both include at least one of doped amorphous silicon, doped microcrystalline silicon, and doped nanocrystalline silicon. For another example, the material of the first doped semiconductor portion may be doped polycrystalline silicon, and the material of the second doped semiconductor portion may include at least one of doped amorphous silicon, doped microcrystalline silicon, and doped nanocrystalline silicon.

[0088] In addition, when at least one of the first doped semiconductor portion and the second doped semiconductor portion is a doped semiconductor layer arranged on the local region of the first surface of the semiconductor substrate, the doped semiconductor layer can be directly arranged on the semiconductor substrate. Alternatively, the solar cell can further comprise an interface passivation layer arranged between the semiconductor substrate and the doped semiconductor layer. In this way, selective collection of carriers can be achieved, and the carrier recombination rate of the surface of the corresponding region of the first surface of the semiconductor substrate is reduced, further improving the photoelectric conversion efficiency of the solar cell. The material and thickness of the interface passivation layer can be set according to the principles described above, and will not be described in detail here.

[0089] When the first doped semiconductor portion and the second doped semiconductor portion are both doped semiconductor layers arranged on the first surface of the semiconductor substrate, an interface passivation layer can be arranged only between the first doped semiconductor portion and the semiconductor substrate. Alternatively, an interface passivation layer can be arranged only between the second doped semiconductor portion and the semiconductor substrate. Alternatively, an interface passivation layer can be arranged between the first doped semiconductor portion and the semiconductor substrate, and between the second doped semiconductor portion and the semiconductor substrate.

[0090] When an interface passivation layer is arranged between the first doped semiconductor portion and the semiconductor substrate, and between the second doped semiconductor portion and the semiconductor substrate, the type of the first selective contact structure formed by the first doped semiconductor portion and the interface passivation layer can be the same as or different from the type of the second selective contact structure formed by the second doped semiconductor portion and the interface passivation layer.

[0091] Alternatively, the first selective contact structure and the second selective contact structure can both be a tunneling passivation contact structure or a heterocontact structure. Alternatively, one of the first selective contact structure and the second selective contact structure can be a tunneling passivation contact structure, and the other can be a heterocontact structure.

[0092] In terms of structure, for example, Figures 9 to 13 As shown in FIG. 1, the doped semiconductor portion 12 can comprise a plurality of first doped regions 13 and a plurality of second doped regions 14. In a single doped semiconductor portion 12, different first doped regions 13 extend along a first direction and are spaced apart along a second direction. The first direction is different from the second direction. The second doped region 14 is located between at least two adjacent first doped regions 13, and the two adjacent first doped regions 13 are electrically connected by the second doped region 14.

[0093] The first direction and the second direction are any two directions parallel to the first surface and / or the second surface of the semiconductor substrate and different from each other. For example, when the first surface and the second surface of the semiconductor substrate are rectangular and at least the first edge and the second edge are alternately arranged to form the rectangle, the first direction can be parallel to the first edge of the rectangle, and the second direction can be parallel to the second edge of the rectangle.

[0094] As shown in Figure 10 the same doped semiconductor portion 12, the projections of the two adjacent second doped regions 14 on the first doped region 13 along the second direction respectively overlap (as the overlapping part of the two dashed boxes in the figure). At this time, the electrode structure can be arranged on each second doped region 14 through the part where the projections of the two adjacent second doped regions 14 on the first doped region 13 along the second direction respectively overlap, which can increase the contact area between the electrode structure and the second doped region 14 and improve the contact performance therebetween. As for the second direction, the width of the part where the projections of the two adjacent second doped regions 14 on the first doped region 13 along the second direction respectively overlap can be set according to actual needs, which is not specifically limited here.

[0095] Optionally, the ratio of the width of the part where the projections of the two adjacent second doped regions 14 on the first doped region 13 along the second direction respectively overlap to the width of the second doped region along the second direction can be greater than or equal to 10% and less than or equal to 96%. For example, the ratio of the width of the part where the projections of the two adjacent second doped regions 14 on the first doped region 13 along the second direction respectively overlap to the width of the second doped region along the second direction can be 10%, 20%, 30%, 40%, 50%, 80%, 90% or 96%, etc.

[0096] As shown in Figure 10 in a single doped semiconductor portion 12, the second doped region 14 can be arranged only between two adjacent first doped regions 13. Alternatively, the second doped region 14 can be arranged not only between two adjacent first doped regions 13, but also on the side of the first doped region 13 located at the outermost position along the second direction and facing away from the other second doped region 14 adjacent thereto.

[0097] In addition, as shown in Figures 9 to 12 in the doped semiconductor portion 12, a second doped region 14 can be arranged between each pair of adjacent first doped regions 13 along the second direction. In this way, the risk of carriers failing to be timely extracted due to the fracture of the electrode structure 15 arranged on the first doped region 13 can be reduced, and the conversion efficiency of the solar cell can be improved.

[0098] Alternatively, as shown in Figure 13As shown, in the doped semiconductor portion 12, at least one pair of two adjacent first doped regions 13 is not provided with a second doped region 14. In this way, the electrode structure 15 can be formed in the at least one pair of two adjacent first doped regions 13, and the recombination loss between the electrode structure 15 and the semiconductor substrate 11 can be reduced. At the same time, the carriers collected by the first doped region 13 can be directly led out through the electrode structure 15 electrically connected thereto, without the need to be conducted to the second doped region 14 and the electrode structure 15 electrically connected to the second doped region 14, thereby reducing the transmission loss and facilitating the improvement of the conversion efficiency of the solar cell.

[0099] The relative distribution position relationship between the first doped region and the second doped region can be determined according to the topography requirement of the electrode structure in the actual application scenario, which is not specifically limited here.

[0100] As for the topography of the first doped region and the second doped region, it can be set according to actual needs. For example, the first doped region and / or the second doped region can have a topography of a quasi-rectangle, a quasi-rhombus, a quasi-parallelogram, a quasi-ellipse, a quasi-trapezoid, etc. The meaning of the word "quasi" is explained by taking a quasi-rectangle as an example: the topography of the first doped region and / or the second doped region can be a rectangle formed by regular straight lines, or a rectangle formed by irregular lines such as curved lines or broken lines.

[0101] It is worth noting that, as shown, Figures 9 to 13 The doped semiconductor portion 12 includes a plurality of first doped regions 13 extending in a first direction and spaced apart in a second direction, so as to collect carriers of the same conductivity type as itself in the semiconductor substrate 11 in time. The second doped region 14 included in the doped semiconductor portion 12 is located between at least two adjacent first doped regions 13, not only having the functions of shunting and collecting carriers, but also being able to electrically connect the two adjacent first doped regions 13, so as to facilitate the current collection of the carriers collected by the first doped region 13 to the part of the electrode structure 15 provided on the second doped region 14 through the second doped region 14, and then enable the electrode structure 15 to lead out the carriers in time.

[0102] In terms of size, the size of the first doped region and the second doped region can be determined according to the size requirement of the electrode structure in the actual application scenario and the equipment precision of manufacturing the electrode structure, which is not specifically limited here.

[0103] For example, as shown in Figure 9 and Figure 12As shown, the length of the different first doped regions 13 in a single doped semiconductor portion 12 can be substantially equal. In this way, the carrier collection capability of the first doped regions 13 arranged on the different regions of the first face and / or the second face of the semiconductor substrate 11 along the second direction is substantially the same, which facilitates the carriers generated by the different regions to be collected by the first doped regions 13 in time and conducted to the electrode structure 15 electrically connected to the second doped regions 14, reduces the carrier recombination rate, and improves the conversion efficiency of the solar cell. Moreover, this facilitates the structural pattern of the different first doped regions 13 in the doped semiconductor portion 12 to be more regular, which facilitates the process difficulty of patterning the doped semiconductor portion 12 to be reduced, and improves the yield of the solar cell. It should be noted that the ratio between the lengths of the different first doped regions 13 in a single doped semiconductor portion 12 is greater than or equal to 0.8 and less than or equal to 1.2, which can be regarded as substantially equal.

[0104] Alternatively, as shown in FIG. 2, in a single doped semiconductor portion 12, the length of at least one first doped region 13 can be greater than the length of the remaining first doped regions 13. Figure 11

[0105] For example, the ratio between the lengths of the different first doped regions in the different doped semiconductor portions can be 0.5, 0.6, 0.7, 0.8, 1, 1.2, 1.3, 1.4, or 1.5, etc. At this time, the length of the different first doped regions can be set according to actual needs, which improves the applicability of the solar cell provided in the embodiments of the present application in different application scenarios.

[0106] As for the width of the second doped region, it can be determined according to the pattern of the electrode structure arranged on the second doped region in the actual application scenario, which is not specifically limited here. As shown in FIG. 1, along the first direction, the width of the second doped region 14 can be less than the length of the first doped region 13. Alternatively, the width of the second doped region can also be equal to the length of the first doped region. Figures 9 to 13

[0107] For example, as shown in FIG. 2, along the first direction, the width of the second doped region 14 can be greater than the length of the first doped region 13. Figures 9 to 13 ​​As shown, for at least one pair of adjacent second doped regions 14 located in the same column in the second direction, the midline along which the second doped regions 14 in the pair extend in the second direction can not be collinear. At this time, for at least one pair of adjacent second doped regions 14, the arrangement position of one second doped region 14 relative to the other second doped region 14 is offset in the first direction, which can effectively widen the actual carrier collection range of the second doped regions 14 located in the same column, improve the collection efficiency of the doped semiconductor portion 12 for carriers, and also enhance the shunting and allocation of the first doped regions belonging to the same doped semiconductor portion 12 for carriers. Even when the electrode structure 15 is manufactured on the semiconductor substrate 11 away from the doped semiconductor portion 12, due to process errors, the actual formation position of the electrode structure 15 is offset in the first direction relative to the initial design position, at least one of the at least one pair of adjacent second doped regions 14 along which the midline extends in the second direction can not be collinear, which increases the contact probability of the electrode structure 15 and the second doped regions 14 included in the doped semiconductor portion 12, is conducive to improving the adhesion of the electrode structure 15 on the semiconductor substrate 11, and improving the collection efficiency of the electrode structure 15 for current, and improving the working performance of the solar cell.

[0108] The midline along which the second doped region extends in the second direction can be determined according to the topography of the second doped region. For example, if the second doped region has a polygonal topography such as a rectangular, rhombic, parallelogram, etc., the intersection of at least two diagonals of the polygon can be determined first, and a straight line passing through the intersection in the first direction is the midline along which the second doped region extends in the second direction. For another example, if the second doped region has a circular or elliptical topography, the intersection can be determined according to at least two diameters, or the intersection can be determined according to the major radius and the minor radius, and a straight line passing through the intersection in the first direction is the midline along which the second doped region extends in the second direction.

[0109] In terms of distribution, in the case where the solar cell is a dual-sided contact cell, the doped semiconductor portion includes a first doped semiconductor portion and a second doped semiconductor portion. Among them, it can be that only one of the first doped semiconductor portion and the second doped semiconductor portion includes different second doped regions located in the same column in the second direction, and the midlines of at least one pair of two adjacent second doped regions extending in the second direction are not collinear. At this time, it can be that one of the first doped semiconductor portion and the second doped semiconductor portion whose conductivity type is N-type includes different second doped regions located in the same column in the second direction, and the midlines of at least one pair of two adjacent second doped regions extending in the second direction are not collinear; while the midlines of different second doped regions located in the same column in the second direction included by one of the first doped semiconductor portion and the second doped semiconductor portion whose conductivity type is P-type are all collinear. Alternatively, it can also be that one of the first doped semiconductor portion and the second doped semiconductor portion whose conductivity type is P-type includes different second doped regions located in the same column in the second direction, and the midlines of at least one pair of two adjacent second doped regions extending in the second direction are not collinear; while the midlines of different second doped regions located in the same column in the second direction included by one of the first doped semiconductor portion and the second doped semiconductor portion whose conductivity type is N-type are all collinear.

[0110] Alternatively, it can also be that each of the first doped semiconductor portion and the second doped semiconductor portion included by the dual-sided contact cell includes different second doped regions located in the same column in the second direction, and the midlines of at least one pair of two adjacent second doped regions extending in the second direction are not collinear.

[0111] In the case where the solar cell is a back contact cell, the doped semiconductor portion includes a first doped semiconductor portion and a second doped semiconductor portion. Among them, as Figure 11As shown, it is possible that, in different second doped regions 14 located in the same column along the second direction included in only one of the first doped semiconductor portion 16 and the second doped semiconductor portion 17, the midlines extending along the second direction of at least one pair of adjacent second doped regions 14 are not collinear. In this case, it is possible that, in different second doped regions 14 located in the same column along the second direction included in one of the first doped semiconductor portion 16 and the second doped semiconductor portion 17 of N-type conductivity, the midlines extending along the second direction of at least one pair of adjacent second doped regions 14 are not collinear; while, in different second doped regions 14 located in the same column along the second direction included in one of the first doped semiconductor portion 16 and the second doped semiconductor portion of P-type conductivity, the midlines extending along the second direction of all are collinear. It may also be that, among the different second doped regions 14 located in the same column along the second direction and included in one of the first doped semiconductor portion 16 and the second doped semiconductor portion 17 with P-type conductivity, the center lines of at least one pair of adjacent second doped regions 14 extending along the second direction are not collinear; while the center lines of the different second doped regions 14 located in the same column along the second direction and included in one of the first doped semiconductor portion 16 and the second doped semiconductor portion 17 with N-type conductivity are all collinear.

[0112] Or, as Figure 12 As shown, in different second doped regions 14 located in the same column along the second direction included in each of the first doped semiconductor portion 16 and the second doped semiconductor portion 17 , the midlines of at least one pair of adjacent second doped regions 14 extending along the second direction may not be collinear.

[0113] In addition, if Figure 12 As shown, when a plurality of doped semiconductor portions 12 of the same conductivity type are provided on the same surface of the semiconductor substrate 11, it can be that among the different second doped regions 14 included in each doped semiconductor portion 12 and located in the same column along the second direction, the midlines of at least one pair of adjacent second doped regions 14 extending along the second direction are not collinear.

[0114] Alternatively, in some of the doped semiconductor portions, the midlines of at least one pair of adjacent second doped regions located in the same column along the second direction may not be collinear. In contrast, in the remaining doped semiconductor portions, the midlines of each pair of adjacent second doped regions located in the same column along the second direction may be collinear. In this case, the two types of doped semiconductor portions may be alternately distributed along the first direction, or the same type of doped semiconductor portions may be adjacently distributed along the first direction, or they may be randomly distributed.

[0115] In addition, if Figure 12As shown in FIG. 1, in the single doped semiconductor part 12, in the different second doped regions 14 located in the same column along the second direction, only part of the pairs of adjacent two second doped regions 14 can have the midlines along the second direction not collinear.

[0116] Alternatively, as shown in FIG. 2, in the single doped semiconductor part 12, in the different second doped regions 14 located in the same column along the second direction, only part of the pairs of adjacent two second doped regions 14 can have the midlines along the second direction not collinear. And, there is at least one single doped semiconductor part 12, which is further provided with multiple second doped regions 14 adjacent along the second direction, and the midlines along the second direction of the multiple second doped regions 14 are collinear. In this way, another example of the solar cell provided by the embodiments of the present application can be provided, and the applicability of the solar cell provided by the embodiments of the present application in different application scenarios can be improved. At the same time, it is beneficial to simplify the structure pattern of the doped semiconductor part 12, reduce the patterning processing difficulty of the doped semiconductor part 12, and improve the yield of the solar cell. Figures 9 to 11 In the single doped semiconductor part, in the different second doped regions located in the same column along the second direction, part of the pairs of adjacent two second doped regions have the midlines along the second direction not collinear, and the rest of the pairs of adjacent two second doped regions have the midlines along the second direction collinear. In this case, the distribution of the second doped regions with the midlines along the second direction not collinear can be determined according to the actual manufacturing situation of the electrode structure, which is not limited here.

[0117] For example, as shown in FIG. 1, the first surface and / or the second surface include at least two edge regions oppositely arranged along the second direction. And, the first surface and / or the second surface further include a middle region; the middle region is located between the two edge regions oppositely arranged along the second direction.

[0118] Figures 9 to 11 For example, as shown in FIG. 1, the first surface and / or the second surface include at least two edge regions oppositely arranged along the second direction. And, the first surface and / or the second surface further include a middle region; the middle region is located between the two edge regions oppositely arranged along the second direction.

[0119] For example, as shown in FIG. 1, the first surface and / or the second surface include at least two edge regions oppositely arranged along the second direction. And, the first surface and / or the second surface further include a middle region; the middle region is located between the two edge regions oppositely arranged along the second direction. Figures 9 to 11 ​As shown, the midlines extending along the second direction of at least one pair of second doped regions 14 adjacent to each other in the second direction in at least one edge region may not be collinear. In this case, the midlines extending along the second direction of at least one pair of second doped regions 14 adjacent to each other in the second direction in at least one edge region may not be collinear. On the one hand, due to factors such as slicing and film deposition quality, the number of defects in the edge region is relatively large. In this case, the midlines extending along the second direction of at least one pair of second doped regions 14 adjacent to each other in the second direction in at least one edge region may not be collinear. This can increase the actual carrier collection range of different second doped regions 14 located in the same column in the edge region, improve the carrier collection of the doped semiconductor portion 12 in the edge region, and reduce the carrier recombination rate in the edge region. On the other hand, it can increase the contact probability between the electrode structure 15 located on the edge region and the second doped region 14 included in the doped semiconductor portion 12, increase the adhesion of the electrode structure 15 to the semiconductor substrate 11, and improve the current collection efficiency of the electrode structure 15, ensuring that the current generated in the edge region can be promptly discharged through the electrode structure 15, thereby improving the operating performance of the solar cell. In addition, it can be understood that a second doping region 14 is provided on the portion of the semiconductor substrate 11 corresponding to the edge area, and the electrode structure 15 manufactured on the second doping region 14 can converge the carriers collected by the first doping region 13 that is electrically in contact with the second doping region 14. At this time, it is only necessary to electrically connect the intra-string interconnection component used to realize the electrical connection of different solar cells to the electrode structure 15 on the second doping region 14 located in the edge area, so that the carriers collected by the first doping region 13 can be extracted. There is no need to set an intra-string interconnection component on the portion of the semiconductor substrate 11 corresponding to the edge area, thereby reducing the risk of problems such as cracks at the edge of the semiconductor substrate 11.

[0120] Alternatively, the center lines of at least one pair of second doping regions adjacent to each other along the second direction in the central region may not be collinear.

[0121] Alternatively, both the edge region and the middle region may have at least one pair of second doped regions adjacent to each other along the second direction, and the center lines extending along the second direction are not collinear.

[0122] As for the widths of the two edge regions of the first surface and / or the second surface that are arranged opposite to each other along the second direction, they can be set according to actual needs.

[0123] For example, the ratio between the width of the edge region and the width of the first surface and / or the second surface of the semiconductor substrate in the second direction can be less than or equal to one third. Alternatively, the solar cell includes a plurality of patterned units distributed in the second direction; the ratio between the width of the edge region and the width of the patterned units in the second direction can be less than or equal to one third. In this way, the distribution area of the second doped regions with the center line not in line in the second direction accounts for a certain proportion, which can prevent the end of the intra-string interconnect from being too close to the edge of the semiconductor substrate due to the small width of the edge region, thereby reducing the risk of the edge of the semiconductor substrate being cracked due to the heat generated by the connection with the intra-string interconnect, and other adverse problems. It can also prevent the carrier collection range of the doped semiconductor part in the area with a large number of defects from being too small due to the small width of the edge region, thereby reducing the carrier recombination rate. In addition, it can also prevent the electrode structure on the second doped region from being too long due to the large width of the edge region, thereby reducing the transmission loss and recombination loss. It can also prevent the electrode structure from not being formed on one of the second doped regions due to the excessive number of settings of two adjacent second doped regions with the center line not in line in the second direction, thereby increasing the contact probability of the electrode structure with the second doped region included in the doped semiconductor part, increasing the adhesion of the electrode structure on the semiconductor substrate, and improving the current collection efficiency of the electrode structure, ensuring that the current generated by the edge region can be promptly conducted out through the electrode structure, and improving the working performance of the solar cell.

[0124] In some cases, the distance between the center lines of at least one pair of two second doped regions adjacent in the second direction in the at least one edge region in the first direction can be greater than the distance between the center lines of at least one pair of two second doped regions adjacent in the second direction in the middle region in the first direction. As described above, due to factors such as film layer formation quality and cutting damage, the number of defects in the at least one edge region is greater than the number of defects in the middle region, so setting the distance between the center lines of at least one pair of two second doped regions adjacent in the second direction in the at least one edge region in the first direction to a larger value can increase the carrier collection range of the two second doped regions adjacent in the second direction in the first direction in the edge region, enhance the carrier collection capacity of the second doped regions in the same column in the edge region, and reduce the carrier recombination rate of the edge region.

[0125] Alternatively, the distance between the center lines of at least one pair of two second doped regions adjacent in the second direction in the at least one edge region in the first direction can also be equal to the distance between the center lines of at least one pair of two second doped regions adjacent in the second direction in the middle region in the first direction.

[0126] As shown in FIG. 2, the middle line extending along the second direction in the first region is offset from the middle line extending along the second direction in the second region by a distance d1 along the first direction. The width of the second doped region 14 along the first direction is d2. The values of d1 and d2 can be determined according to the size requirement of the electrode structure 15 and the size of the process error, and are not specifically limited here. Figures 9 to 13 As shown in FIG. 2, the middle line extending along the second direction in the first region is offset from the middle line extending along the second direction in the second region by a distance d1 along the first direction. The width of the second doped region 14 along the first direction is d2. The values of d1 and d2 can be determined according to the size requirement of the electrode structure 15 and the size of the process error, and are not specifically limited here.

[0127] For example, d1 can be 10 μm, 12 μm, 15 μm, 18 μm, 20 μm, 22 μm, 25 μm, 28 μm, 30 μm, 50 μm, 80 μm, 100 μm, 120 μm, 150 μm, 180 μm, 200 μm, 220 μm, 250 μm, 280 μm, or 300 μm, etc. Within the above range, the effect of improving the carrier collection and distribution is not obvious when d1 is small, and it is also beneficial to match the process error in the actual manufacturing of the electrode structure, so as to increase the contact probability of the electrode structure and the second doped region included in the doped semiconductor part, improve the adhesion of the electrode structure on the semiconductor substrate, and improve the current collection efficiency of the electrode structure.

[0128] For example, d2 can be 110 μm, 150 μm, 200 μm, 300 μm, 500 μm, 700 μm, 900 μm, 1 mm, 2 mm, or 3 mm, etc.

[0129] For example, d2-d1>100 μm. For example, the difference between d2 and d1 may be greater than 101 μm, 102 μm, 105 μm, 108 μm, 110 μm, 115 μm, 200 μm, 300 μm, 400 μm, 500 μm, 600 μm, 700 μm, 805 μm, 900 μm, or 1000 μm. When the difference between d2 and d1 is within the above range, it is beneficial to prevent d1 from being too large, resulting in a small proportion of overlapping areas between different second doping regions located in the same column along the second direction in the first direction, which can achieve effective allocation of carriers in the connected first doping regions, and is beneficial to making the width of the overlapping area along the first direction less than or equal to the process error of manufacturing the electrode structure, thereby facilitating the electrode structure to be formed on each of at least one pair of two adjacent second doping regions whose midlines extending along the second direction are not collinear, thereby increasing the contact probability between the electrode structure and the second doping region included in the doped semiconductor portion, and improving the adhesion of the electrode structure on the semiconductor substrate, as well as improving the current collection efficiency of the electrode structure.

[0130] Exemplarily, the ratio of d1 to d2 can be greater than or equal to 10% and less than or equal to 95%. For example, the ratio of d1 to d2 can be 10%, 15%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90% or 95%. This can prevent the smaller carrier collection range of different second doping regions in the same column along the first direction due to the smaller ratio of d1 to d2, and can achieve effective carrier allocation of the connected first doping regions, thereby improving the carrier collection and allocation efficiency of different second doping regions in the same column along the first direction. It can also prevent the narrow width of the overlapping area between two adjacent second doping regions along the second direction due to the larger ratio, which is beneficial to increasing the contact area between the electrode structure and the second doping region and improving the contact performance between the two.

[0131] For example, Figures 9 to 13 As shown, in each pair of second doped regions 14 whose midlines extending along the second direction are not collinear, the two opposing boundaries of the first region along the first direction can be aligned. In this case, the structural pattern corresponding to the doped semiconductor portion 12 is more regular, which helps reduce the difficulty in manufacturing the doped semiconductor portion 12 and improve the yield of the solar cell. Furthermore, this prevents the width of at least one second doped region 14 from being too large or too small due to the staggered arrangement of the opposing boundaries of different first regions along the first direction, which could lead to high parasitic absorption or excessive carrier recombination velocity, thereby improving the performance of the solar cell.

[0132] For example, Figures 9 to 13As shown, in each pair of second doped regions 14 whose midlines extending along the second direction are not collinear, two boundaries of different second regions disposed oppositely along the first direction may be aligned. The application principle of the beneficial effect in this case is the same as the application principle of the beneficial effect of aligning two boundaries of different second regions disposed oppositely along the first direction in each pair of second doped regions 14 whose midlines extending along the second direction are not collinear, and will not be further described here.

[0133] Alternatively, in each pair of second doped regions whose midlines extending along the second direction are not collinear, two boundaries of different first regions and / or different second regions arranged opposite to each other along the first direction may be staggered. The distance between the two staggered boundaries can be set based on the accuracy of the patterning process during the manufacture of the doped semiconductor portion and actual needs, and is not specifically limited here.

[0134] like Figures 9 to 13 As shown, in the case where multiple pairs of adjacent second doping regions 14 located in the same column along the second direction have non-collinear midlines extending along the second direction, each pair of three adjacent second doping regions 14 along the second direction constitutes a group of second doping regions 14; the three second doping regions 14 belonging to the same group of second doping regions 14 are defined as a first region, a second region, and a third region, respectively, along the second direction. In at least one group of second doping regions 14, the midline of the first region and the midline of the third region extending along the second direction are both located on the same side of the midline of the second region extending along the second direction.

[0135] It is worth noting that on a single doped semiconductor portion, the same electrode structure manufactured using the same process has the same direction of position offset due to process errors. Therefore, when in at least one group of second doped regions, the center line of at least one first region extending along the second direction and the center line of the third region extending along the second direction are both distributed on the same side of the center line of the second region extending along the second direction, the offset direction of the second doped regions in the single doped semiconductor portion is consistent, which is conducive to enabling the same electrode structure to be formed at least in a single doped semiconductor portion, relative to other second doped regions adjacent to itself with the same center line offset direction extending in the second direction, thereby increasing the contact probability between the electrode structure and the different second doped regions with center line offset in the doped semiconductor portion, thereby improving the adhesion of the electrode structure on the semiconductor substrate, as well as improving the current collection efficiency of the electrode structure, thereby improving the working performance of the solar cell.

[0136] Of course, in the case where multiple pairs of adjacent second doping regions located in the same column along the second direction have non-collinear midlines extending along the second direction, in at least one group of second doping regions, the midlines of a portion of the first regions extending along the second direction and the midlines of another second doping region of the second region extending along the second direction may also be distributed on opposite sides of the midline of the third region extending along the second direction. This arrangement allows the electrode structure to be formed on at least one of the two second doping regions offset along the first direction, thereby increasing the probability of contact between the electrode structure and the second doping regions included in the doped semiconductor portion.

[0137] Exemplarily, in the case where multiple pairs of adjacent second doping regions located in the same column along the second direction have non-collinear midlines extending along the second direction, in at least one group of second doping regions, the ratio of the distances offset along the first direction relative to the midline of the second region extending along the second direction between the midline of the first region and the midline of the third region can be greater than or equal to 0.8 and less than or equal to 1.2. In this case, the offset distances of the different second doping regions with midline offsets are substantially the same, preventing the electrode structure from not being formed on the second doping region due to the offset distance corresponding to a single second doping region being too large or too small, resulting in a process error during the manufacture of the electrode structure being greater than the offset distance. This helps increase the probability of contact between the electrode structure and the different second doping regions in the doped semiconductor portion with midline offsets, improves the adhesion of the electrode structure to the semiconductor substrate, and improves the current collection efficiency of the electrode structure, thereby improving the operating performance of the solar cell.

[0138] As for the offset of the midlines of the second doped regions extending along the second direction in the differently doped semiconductor portions, for example, Figures 9 to 13 As shown, in different second doping regions 14 of the same conductivity type and located in the same row along the first direction, the midlines extending along the second direction of at least one pair of adjacent second doping regions 14 can be both distributed on the same side of the midlines extending along the second direction of other second doping regions 14 adjacent to the second doping region 14. The application principle of the beneficial effect in this case can be referred to the application principle of the beneficial effect described above in at least one group of second doping regions 14, in which the midlines extending along the second direction of at least one first region and the midlines extending along the second direction of the third region are both distributed on the same side of the midline extending along the second direction of the second region, and will not be further elaborated here.

[0139] Alternatively, in different second doping regions located in the same row along the first direction and having the same conductivity type, the center lines of at least one pair of adjacent second doping regions extending along the second direction may also be distributed on opposite sides of the center lines of other second doping regions adjacent to themselves along the second direction extending along the second direction.

[0140] For example, in different second doping regions of the same conductivity type and located in the same row along the first direction, the midlines of at least one pair of adjacent second doping regions extending along the second direction may each have a ratio of a distance offset along the first direction relative to the midlines of other second doping regions adjacent to the second doping region extending along the second direction that is greater than or equal to 0.8 and less than or equal to 1.2. The application principle of the beneficial effect in this case can be referred to the application principle of the beneficial effect described above regarding the midline of at least one first region and the midline of the third region extending along the second direction in at least one group of second doping regions, both of which have a ratio of a distance offset along the first direction relative to the midline of the second region extending along the second direction that is greater than or equal to 0.8 and less than or equal to 1.2, and will not be further elaborated here.

[0141] In terms of offset mode, Figure 9 As shown, in the case where the solar cell is a double-sided contact cell, the position of the second doping region 14 can be moved along the first direction only so that in different second doping regions 14 located in the same column along the second direction, the midlines extending along the second direction of at least one pair of adjacent second doping regions 14 are not collinear.

[0142] As shown in Figure 10, in the case of a back-contact solar cell, in the at least one pair of second doped regions 14 whose midlines extending along the second direction are not collinear, the widths of the spacers 18 on either side along the first direction can be equal in the second doped region 14 located in the upper layer along the second direction and / or the second doped region 14 located in the lower layer along the second direction. This arrangement results in a more regular pattern corresponding to the spacers 18, preventing the isolation effect of the spacers 18 from being affected by the smaller width of a single location within the spacers 18, and facilitating a reduction in the carrier recombination rate between the first doped semiconductor portion 16 and the second doped semiconductor portion 17. In this case, the midlines of the at least one pair of second doped regions 14 extending along the second direction can be non-collinear by varying the lengths of adjacent first doped regions 13 of opposite conductivity types along the first direction.

[0143] Or, as Figures 11 to 13 As shown, in at least one pair of second doped regions 14 whose midlines extending along the second direction are not collinear, the widths of the spacers 18 on either side along the first direction are also unequal in the second doped region 14 located in the upper layer along the second direction and / or the second doped region 14 located in the lower layer along the second direction. In this case, the widths of the spacers 18 can be adjusted to ensure that the midlines extending along the second direction of at least one pair of adjacent second doped regions 14 are not collinear. Furthermore, the wider spacers 18 can be used to isolate the offset electrode structure 15 from the first doped semiconductor portion 16 or the second doped semiconductor portion 17 of opposite conductivity type, thereby reducing the risk of leakage.

[0144] As for the width setting of the spacer region, it can be determined based on whether the second doping region adjacent to the spacer region along the first direction is offset relative to the center line of other second doping regions adjacent to itself along the second direction extending along the second direction, the offset method, and the offset distance.

[0145] For example, Figures 9 to 13 As shown, in the case where multiple pairs of adjacent second doping regions 14 are arranged in the same column along the second direction and their midlines extending along the second direction are not collinear, the widths of the spacers 18 arranged in the upper layer along the second direction and on the same side along the first direction of the different second doping regions 14 can be equal in width, and / or the widths of the spacers 18 arranged in the lower layer along the second direction and on the same side along the first direction can be equal. In this case, the widths of the spacers 18 at different locations are more regularly arranged, which can reduce the difficulty of manufacturing the solar cell and improve the yield rate of the solar cell. In addition, when the midlines of at least one pair of adjacent second doping regions 14 extending in the second direction are not collinear by adjusting the width of the spacer 18, the widths of the spacer 18 provided on the same side of the first direction of different second doping regions 14 located in the upper layer (and / or lower layer) along the second direction are equal, which is also beneficial for ensuring that, in the plurality of pairs of second doping regions 14 whose midlines extending in the second direction are not collinear, the midline of at least one second doping region 14 extending in the second direction and the midline of another second doping region 14 separated from the second doping region 14 by one second doping region 14 extending in the second direction are both distributed in the other second doping regions adjacent to the second doping region 14. 14 are on the same side of the midline extending along the second direction, that is, the offset direction of the second doped region 14 in the single doped semiconductor portion 12 is consistent, which is conducive to enabling the same electrode structure 15 to be formed at least in the single doped semiconductor portion 12, relative to the other second doped regions 14 adjacent to itself with the same midline offset direction extending along the second direction on different second doped regions 14, thereby increasing the contact probability between the electrode structure 15 and the different second doped regions 14 with midline offset in the doped semiconductor portion 12, which is conducive to improving the adhesion of the electrode structure 15 on the semiconductor substrate 11, and improving the current collection efficiency of the electrode structure 15, thereby improving the working performance of the solar cell.

[0146] Of course, in the case where there are multiple pairs of adjacent second doping regions located in the same column along the second direction and whose midlines extending along the second direction are not collinear, in each pair of second doping regions whose midlines extending along the second direction are not collinear, the widths of the spacer regions 18 arranged on the same side of the first direction of different second doping regions located in the upper layer and / or lower layer along the second direction may also be unequal, so as to reduce the difficulty of patterning processing in manufacturing the doped semiconductor portion and improve the yield of the solar cell.

[0147] For example, Figures 11 to 13 As shown, in at least one pair of second doped regions 14 adjacent in the second direction, the width of one of the two spacer regions 18 adjacent in the first direction to the second doped region 14 located above the second doped region 14 in the second direction, which is on the same side of the centerline of the second doped region 14 located below the second doped region 14 in the second direction, is greater than the width of the other. Furthermore, in the case of two spacer regions 18 adjacent in the first direction to the second doped region 14 located below the second doped region 14 in the second direction, the width of one of the two spacer regions 18 adjacent in the first direction to the second doped region 14 located below the second doped region 14 in the second direction, which is on the same side of the centerline of the second doped region 14 located above the second doped region 14 in the second direction, is greater than the width of the other. With this arrangement, even if the electrode structure 15 located on the second doped region 14 is offset in the first direction, it can be isolated from the first doped semiconductor portion 16 or the second doped semiconductor portion 17 of opposite conductivity type by the larger spacer region 18, thereby preventing short circuits and improving the electrical reliability of the solar cell.

[0148] For example, in different second doping regions that are located in the same row along the first direction and have the same conductivity type, the ratio of the width of the spacer regions disposed on the same side of at least one pair of second doping regions adjacent to each other along the first direction along the first direction may be greater than or equal to 0.8 and less than or equal to 1.2. It is understandable that the different electrode structures on the second doping regions located in different columns along the second direction are formed using the same manufacturing equipment, so the offset of the different electrode structures in the first direction is roughly the same. When the ratio of the width of the spacer regions disposed on the same side of at least one pair of second doping regions adjacent to each other along the first direction along the first direction is greater than or equal to 0.8 and less than or equal to 1.2, the different electrode structures disposed on the second doping regions located in different columns along the second direction can be separated from the first doped semiconductor portion or the second doped semiconductor portion of opposite conductivity type by the spacer regions of roughly the same width, thereby preventing short circuits.

[0149] For example, Figure 14As shown, the solar cell also includes an electrode structure 15 disposed on the side of the doped semiconductor portion 12 away from the semiconductor substrate 11. Also, in the at least one pair of second doped regions 14 whose center lines extending along the second direction are not collinear, in the case where the width of the spacing region 18 on the side of the second doped region 14 disposed on the upper layer along the second direction and / or the second doped region 14 disposed on the lower layer along the second direction is not equal along the first direction, the distance between the second doped region 14 and the electrode structure 15 along the first direction at the boundary between the second doped region 14 and the spacing region 18 with the greater width is d3, and the distance between the second doped region 14 and the electrode structure 15 along the first direction at the boundary between the second doped region 14 and the spacing region 18 with the smaller width is d4. d3 < d4. In this way, along the first direction, the electrode structure 15 is closer to the spacing region 18 with the greater width, and the electrode structure 15 can be isolated from the first doped semiconductor portion 16 or the second doped semiconductor portion 17 of the opposite conduction type through the spacing region 18 with the greater width, preventing short circuits and improving the electrical reliability of the solar cell. The difference between d3 and d4 can be set according to actual requirements, and is not specifically limited here.

[0150] In the case where the solar cell is a dual-sided contact cell, the solar cell can also include an electrode structure disposed on the side of the doped semiconductor portion away from the semiconductor substrate. Also, in the at least one pair of second doped regions whose center lines extending along the second direction are not collinear, in the case where the distance between the electrode structure and the boundary on the side of the second doped region disposed on the upper layer along the second direction and / or the second doped region disposed on the lower layer along the second direction is not equal along the first direction, the smaller one of the distance between the electrode structure and the boundary on the side of the second doped region along the first direction is d3, and the larger one of the distance between the electrode structure and the boundary on the side of the second doped region along the first direction is d4.

[0151] For example, in the at least one pair of second doped regions whose center lines extending along the second direction are not collinear, the difference between d4 and d3 for one of the second doped regions can be greater than the difference between d4 and d3 for the other of the second doped regions. It should be noted that this case can be applied to both back contact cells and dual-sided contact cells. In this way, the actual carrier collection range of the second doped regions in the same column can be effectively widened, improving the collection efficiency of the doped semiconductor portion for carriers, and also enhancing the shunting and distribution of carriers for the first doped regions belonging to the same doped semiconductor portion. In addition, this also facilitates increasing the contact probability of the electrode structure with the second doped regions included in the doped semiconductor portion, facilitating improving the adhesion of the electrode structure on the semiconductor substrate, and improving the collection efficiency of the electrode structure for current.

[0152] For example, the ratio of d4 to d3 corresponding to at least one second doping region is greater than 1:1 and less than or equal to 10:1. In this case, the increased risk of leakage caused by a narrow boundary between the electrode structure and the second doping region can be prevented, the carrier recombination rate can be reduced, and the conversion efficiency of the solar cell can be improved.

[0153] Exemplarily, in different second-doped regions located in the same column along the second direction, for at least a pair of second-doped regions whose midlines extending along the second direction are not collinear, the second-doped region located in the upper layer along the second direction is defined as the first region, and the second-doped region located in the lower layer is defined as the second region. Along the second direction, the difference between d4 and d3 corresponding to two adjacent first regions can be substantially the same; and / or, along the second direction, the difference between d4 and d3 corresponding to two adjacent first regions can be substantially the same; and / or, along the second direction, the difference between d4 and d3 corresponding to two adjacent second regions can be substantially the same; and / or, along the second direction, the difference between d4 and d3 corresponding to two adjacent second regions can be substantially the same; and / or, along the second direction, the difference between d4 and d3 corresponding to two adjacent second regions can be substantially the same; and / or, along the second direction, the difference between d4 and d3 corresponding to two adjacent second regions can be substantially the same; and / or, along the second direction, the difference between d4 and d3 corresponding to two adjacent second regions can be substantially the same. It should be noted that this situation is applicable to both back-contact cells and double-sided contact cells. Furthermore, this arrangement facilitates alignment of the two opposing boundaries of different first and / or second regions along the first direction within each pair of second doped regions whose midlines extending along the second direction are not collinear, thereby resulting in a more regular structural pattern corresponding to the doped semiconductor portion. This reduces the difficulty in manufacturing the doped semiconductor portion and improves the yield of the solar cell. Furthermore, this arrangement prevents the width of at least one second doped region from being excessively large or too small due to the staggered arrangement of the opposing boundaries of different first and / or second regions along the first direction, which could lead to high parasitic absorption or excessively high carrier recombination velocity, thereby improving the performance of the solar cell.

[0154] For example, Figure 10 and Figure 12 As shown, in a case where the solar cell is a back-contact cell and the midlines of at least one pair of adjacent second doped regions 14 located in the same column along the second direction included in only one of the first doped semiconductor portion 16 and the second doped semiconductor portion 17 are not collinear, the first doped regions 13 located in the same column along the second direction included in the other of the first doped semiconductor portion 16 and the second doped semiconductor portion 17 are aligned at least at one end along the first direction. This arrangement provides another example of the solar cell provided in the embodiments of the present application, improving the applicability of the solar cell provided in the embodiments of the present application in different application scenarios. Furthermore, the structural patterns corresponding to the first doped semiconductor portion 16 and the second doped semiconductor portion 17 can be reduced, thereby reducing the process difficulty of manufacturing the solar cell.

[0155] In terms of size, in a doped semiconductor portion having at least one pair of adjacent second doped regions extending along the second direction with their midlines non-collinear, the widths of the first doped region and the second doped region can be determined according to the type of solar cell and the offset method and offset distance of the second doped regions extending along the second direction with their midlines non-collinear.

[0156] For example, in a doped semiconductor portion having at least one pair of adjacent second doped regions along the second direction whose midlines extending along the second direction are not collinear, lengths of different first doped regions may be the same.

[0157] Or, as Figure 11 As shown, in a single first doped semiconductor portion 16 and / or a single second doped semiconductor portion 17, when multiple second doped regions 14 adjacent in the second direction are disposed with their centerlines extending in the second direction collinear, the length of the first doped region 13 adjacent in the first direction to the second doped region 14 collinear with the centerline extending in the second direction can be greater than the length of the first doped region 13 adjacent in the first direction to the second doped region 14 not collinear with the centerline extending in the second direction. This arrangement eliminates the need for lengthening the first doped region 13 in portions of the electrode structure 15 less prone to positional shifting. This facilitates higher carrier diversion and collection capabilities in the first doped region 13 in portions of the electrode structure 15 less prone to positional shifting, reduces carrier recombination velocity, and improves the conversion efficiency of the solar cell.

[0158] Or, if Figure 10 As shown, in a single first doped semiconductor portion 16 and / or a single second doped semiconductor portion 17, when a plurality of second doped regions 14 adjacent in the second direction are provided with collinear midlines extending in the second direction, in the first doped regions 13 adjacent in the first direction to the second doped regions 14 that are not collinear with the midlines extending in the second direction, the lengths of some first doped regions 13 are equal to the lengths of the first doped regions 13 adjacent in the first direction to the second doped regions 14 that are collinear with the midlines extending in the second direction, and the lengths of the remaining first doped regions 13 are greater than the lengths of the first doped regions 13 adjacent in the first direction to the second doped regions 14 that are collinear with the midlines extending in the second direction. This arrangement provides another example of the solar cell provided in the embodiments of the present application, and can improve the applicability of the solar cell provided in the embodiments of the present application in different application scenarios. In addition, by adjusting the lengths of the first doped regions 13 adjacent to the second doped regions 14 in the first direction, it is possible to control whether the midlines extending in the second direction of different second doped regions 14 located in the same column in the second direction are collinear, thereby reducing manufacturing difficulty.

[0159] As for the width of the second doping region, for example, Figures 9 to 13As shown, the width of the two adjacent second doped regions 14 along the second direction, which are not collinear with the center line extending along the second direction, can be substantially equal. In this way, the two adjacent second doped regions 14 along the second direction, which are not collinear with the center line extending along the second direction, both have a larger width, which is conducive to the shunting and collection of carriers, and can also reduce the ratio between the process error and the width of the second doped region 14 along the first direction. Even if the actual forming position of the electrode structure 15 deviates from the initial design position along the first direction due to the process error, the actual formed electrode structure 15 deviates from the center line extending along the second direction of the second doped region 14 by a small distance due to the small process error (relative to the width of the second doped region 14), and the width of the second doped region 14 is large, which is conducive to the electrode structure 15 being formed on each of the two adjacent second doped regions 14 along the second direction, which are not collinear with the center line extending along the second direction, increasing the contact probability of the electrode structure 15 and the second doped region 14 included in the doped semiconductor part 12, improving the adhesion of the electrode structure 15 on the semiconductor substrate 11, and improving the current collection efficiency of the electrode structure 15, improving the working performance of the solar cell.

[0160] Of course, the width of at least one second doped region in the same column along the second direction can be greater or less than the width of the remaining second doped regions.

[0161] In a second aspect, the embodiments of the present application provide a photovoltaic module, which includes a cell string and an encapsulation layer. The cell string is formed by electrically connecting a plurality of solar cells as provided in the first aspect and various implementation manners thereof. The encapsulation layer covers the surface of the cell string.

[0162] The beneficial effects of the second aspect and various implementation manners thereof in the embodiments of the present application can be analyzed with reference to the beneficial effects in the first aspect and various implementation manners thereof, which will not be described here.

[0163] In the above description, the patterning, etching and other technical details of each layer are not described in detail. However, those skilled in the art should understand that various technical means can be used to form layers, regions and the like with the required shape. In addition, those skilled in the art can also design methods that are not exactly the same as the methods described above in order to form the same structure. In addition, although each embodiment is described above, this does not mean that the measures in each embodiment cannot be used advantageously in combination.

[0164] The above described embodiments of the application have been described. However, these embodiments are merely meant to be illustrative of the application and not limiting thereof. The scope of the application is defined by the appended claims and their equivalents. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the application.

Claims

1. A solar cell, characterized by, The solar cell comprises: a semiconductor substrate and a doped semiconductor portion; the semiconductor substrate has opposite first and second surfaces; the doped semiconductor portion is disposed in or on a partial region of the first surface and / or the second surface; wherein the doped semiconductor portion comprises a plurality of first doped regions and a plurality of second doped regions; in a single doped semiconductor portion, different first doped regions extend along a first direction and are spaced apart along a second direction; the first direction is different from the second direction; the second doped regions are located between at least two adjacent first doped regions, and the two adjacent first doped regions are electrically connected through the second doped regions; in different second doped regions located in the same column along the second direction, at least one pair of adjacent second doped regions do not have a common center line along the second direction; in the second doped regions located in the same column along the second direction, the projection of two adjacent second doped regions on the first doped regions along the second direction partially overlaps; the solar cell further comprises an electrode structure disposed on the side of the doped semiconductor portion away from the semiconductor substrate.

2. The solar cell according to claim 1, characterized in that, the first surface and / or the second surface comprises at least two edge regions oppositely disposed along the second direction; at least one of the edge regions has at least one pair of adjacent second doped regions along the second direction, and the center line of the at least one pair of adjacent second doped regions along the second direction is not common.

3. The solar cell according to claim 2, characterized in that, along the second direction, the ratio of the width of the edge region to the width of the first surface and / or the second surface of the semiconductor substrate is less than or equal to one-third; alternatively, the solar cell comprises a plurality of patterned units distributed along the second direction; along the second direction, the ratio of the width of the edge region to the width of the patterned unit is less than or equal to one-third.

4. The solar cell of claim 2, wherein the first surface and / or the second surface further comprises a middle region located between two edge regions oppositely disposed along the second direction; the spacing of the center line of at least one pair of adjacent second doped regions along the second direction in at least one of the edge regions along the first direction is greater than the spacing of the center line of at least one pair of adjacent second doped regions along the second direction in the middle region along the first direction.

5. The solar cell of claim 1, wherein in different second doped regions located in the same column along the second direction, at least one pair of second doped regions having a center line along the second direction are not common; one of the at least one pair of second doped regions located in the upper layer is a first region, and one of the at least one pair of second doped regions located in the lower layer is a second region; the center line of the first region along the second direction is offset from the center line of the second region along the second direction along the first direction by a distance d1; the width of the second doped region along the first direction is d2; wherein d1≥10μm; and / or, d2-d1>100μm; and / or, the ratio of d1 and d2 is greater than or equal to 4% and less than or equal to 90%; And / or, in each pair of the second doped regions with the midlines extending in the second direction not being collinear, two boundaries of different first regions oppositely arranged along the first direction are aligned; And / or, in each pair of the second doped regions with the midlines extending in the second direction not being collinear, two boundaries of different second regions oppositely arranged along the first direction are aligned.

6. The solar cell of claim 1, wherein In different second doped regions located in the same column along the second direction, in the case that multiple pairs of two second doped regions adjacent along the second direction are provided with midlines extending in the second direction not being collinear, along the second direction, every three second doped regions adjacent in the multiple pairs of second doped regions are a group of second doped regions; three second doped regions belonging to the same group of second doped regions are sequentially defined as a first region, a second region and a third region along the second direction; In at least one group of second doped regions, the midline extending in the second direction of the first region and the midline extending in the second direction of the third region are both distributed on the same side of the midline extending in the second direction of the second region; and / or, in at least one group of second doped regions, the midline extending in the second direction of the first region and the midline extending in the second direction of the third region are both offset by a distance along the first direction relative to the midline extending in the second direction of the second region, and the ratio of the distance is greater than or equal to 0.8 and less than or equal to 1.

2.

7. The solar cell of claim 1, wherein In the doped semiconductor part, no second doped region is provided between at least one pair of two first doped regions adjacent.

8. The solar cell of claim 1, wherein, In different second doped regions located in the same column along the second direction, the widths of two second doped regions adjacent along the second direction with the midlines extending in the second direction not being collinear are substantially equal.

9. The solar cell of claim 1, wherein, In a single doped semiconductor part, the lengths of different first doped regions are substantially equal; And / or, in different doped semiconductor parts, the ratio of the lengths of different first doped regions is greater than or equal to 0.5 and less than or equal to 1.

5.

10. The solar cell of claim 1, wherein, In different second doped regions located in the same row along the first direction and having the same conductivity type, at least one pair of two second doped regions adjacent along the second direction are both distributed on the same side of the midline extending in the second direction of the other second doped region adjacent along the second direction to itself; And / or, in different second doped regions located in the same row along the first direction and having the same conductivity type, at least one pair of two second doped regions adjacent along the second direction are both offset by a distance along the first direction relative to the midline extending in the second direction of the other second doped region adjacent along the second direction to itself, and the ratio of the distance is greater than or equal to 0.8 and less than or equal to 1.

2.

11. The solar cell according to any one of claims 1 to 10, wherein The doped semiconductor part comprises a first doped semiconductor part and a second doped semiconductor part with opposite conductivity types; one of the first doped semiconductor part and the second doped semiconductor part is arranged on a first surface of the semiconductor substrate, and the other is arranged on a second surface of the semiconductor substrate; The first doped semiconductor part and the second doped semiconductor part are arranged on the first surface of the semiconductor substrate; the region between the first doped semiconductor part and the second doped semiconductor part on the first surface is a spacing region; The first doped semiconductor part and the second doped semiconductor part are arranged on the first surface of the semiconductor substrate; the region between the first doped semiconductor part and the second doped semiconductor part on the first surface is a spacing region; 12. The solar cell according to any one of claims 1 to 10, wherein The first doped semiconductor part and the second doped semiconductor part are arranged on the first surface of the semiconductor substrate; the region between the first doped semiconductor part and the second doped semiconductor part on the first surface is a spacing region; The first doped semiconductor part and the second doped semiconductor part are arranged on the first surface of the semiconductor substrate; the region between the first doped semiconductor part and the second doped semiconductor part on the first surface is a spacing region; The first doped semiconductor part and the second doped semiconductor part are arranged on the first surface of the semiconductor substrate; the region between the first doped semiconductor part and the second doped semiconductor part on the first surface is a spacing region; 13. The solar cell of claim 12, wherein, In the single first doped semiconductor part and / or the single second doped semiconductor part, when the center lines of the plurality of second doped regions adjacent along the second direction extend along the second direction are collinear, The length of the first doped region adjacent along the first direction to the second doped region collinear along the center line extending along the second direction is greater than the length of the first doped region adjacent along the first direction to the second doped region non-collinear along the center line extending along the second direction; Or, in the first doped region adjacent along the first direction to the second doped region non-collinear along the center line extending along the second direction, the length of part of the first doped region is equal to the length of the first doped region adjacent along the first direction to the second doped region collinear along the center line extending along the second direction, and the length of the remaining first doped region is greater than the length of the first doped region adjacent along the first direction to the second doped region collinear along the center line extending along the second direction.

14. The solar cell of claim 12, wherein, The first doped semiconductor part and the second doped semiconductor part are arranged on the first surface of the semiconductor substrate; the region between the first doped semiconductor part and the second doped semiconductor part on the first surface is a spacing region; In the at least one pair of second doped regions non-collinear along the center line extending along the second direction, the spacing regions on both sides of the second doped region arranged on the upper layer along the second direction and / or the second doped region arranged on the lower layer along the second direction along the first direction are equal in width; Or, in at least one pair of the second doped regions whose midlines extending in the second direction are not collinear, the second doped region disposed on the upper layer along the second direction and / or the second doped region disposed on the lower layer along the second direction, the widths of the spacing regions on both sides of the second doped region along the first direction are not equal.

15. The solar cell of claim 14, wherein, In different second doped regions located in the same column along the second direction, when multiple pairs of two second doped regions adjacent to each other are provided, and the midlines extending in the second direction of the two second doped regions in each pair are not collinear, In each pair of the second doped regions whose midlines extending in the second direction are not collinear, the widths of the spacing regions on the same side of the different second doped regions located on the upper layer along the second direction along the first direction are equal; And / or, the widths of the spacing regions on the same side of the different second doped regions located on the lower layer along the second direction along the first direction are equal.

16. The solar cell of claim 14, wherein, In at least one pair of the second doped regions whose midlines extending in the second direction are not collinear, when the widths of the spacing regions on both sides of the second doped region along the first direction are not equal, the second doped region and the spacing region with the greater width, and the distance of the electrode structure along the first direction is d3, and the second doped region and the spacing region with the smaller width, and the distance of the electrode structure along the first direction is d4; d3 < d4.

17. The solar cell of any one of claims 14 to 16, wherein the back surface is textured. In at least one pair of two second doped regions adjacent to each other along the second direction, ​ The width of one of the two spacing regions adjacent to each other along the first direction of the second doped region located on the upper layer along the second direction, which is disposed on the same side of the midline extending in the second direction of the second doped region located on the lower layer relative to the midline extending in the second direction of the second doped region located on the upper layer, is greater than the width of the other; And / or, the width of one of the two spacing regions adjacent to each other along the first direction of the second doped region located on the lower layer along the second direction, which is disposed on the same side of the midline extending in the second direction of the second doped region located on the lower layer relative to the midline extending in the second direction of the second doped region located on the upper layer, is greater than the width of the other.

18. The solar cell of claim 17, wherein, In different second doped regions located in the same row along the first direction and having the same conductivity type, the ratio of the widths of the spacing regions on the same side of at least one pair of two second doped regions adjacent to each other along the first direction is greater than or equal to 0.8 and less than or equal to 1.

2.

19. The solar cell according to claim 15 or 16, characterized in that, In different second doped regions located in the same column along the second direction, when only one of the first doped semiconductor part and the second doped semiconductor part includes, at least one pair of two second doped regions adjacent to each other, the midlines extending in the second direction of the two second doped regions in each pair are not collinear, The other of the first doped semiconductor portion and the second doped semiconductor portion includes different first doped regions in the same column in the second direction flush along at least one end of the first doped regions in the first direction.

20. The solar cell of claim 12, wherein, At least a partial region of the first doped semiconductor portion and at least a partial region of the second doped semiconductor portion are electrically connected.

21. A photovoltaic module, characterized by, Comprising: a battery string formed by electrically connecting a plurality of the solar cell according to any one of claims 1 to 20; and a packaging layer covering a surface of the battery string.

Images