Solar cells and their preparation methods, photovoltaic modules

Abstract

This invention relates to a solar cell and its fabrication method, as well as a photovoltaic module. The solar cell comprises a first electrode layer, a perovskite light-absorbing layer, and a second electrode layer stacked sequentially. The perovskite light-absorbing layer contains perovskite material and a dopant doped into the perovskite material. The dopant has the structure shown in formula (1): R1 is selected from hydrogen atoms, halogens, carbonyl groups, substituted or unsubstituted C1-C10 alkyl groups, ester groups, carboxyl groups, amide groups, amino groups, and methylthio groups; R2 is selected from hydrogen atoms, substituted or unsubstituted C6-C20 aryl groups, substituted or unsubstituted C1-C10 alkyl groups, substituted or unsubstituted C2-C20 heteroaryl groups, hydroxyl groups, and carboxyl groups; R3 is selected from hydrogen atoms, halogens, substituted or unsubstituted C1-C10 alkyl groups, and cyano groups. Adding the aforementioned dopant to the perovskite light-absorbing layer of the solar cell improves its electrical performance.

Description

Technical Field

[0001] This invention relates to the field of photovoltaic technology, and in particular to a solar cell and its preparation method, and a photovoltaic module. Background Technology

[0002] Perovskite solar cells, as the third generation of photovoltaic cells, have a theoretical photoelectric conversion efficiency of up to 31%, and the highest photoelectric efficiency to date has exceeded 26.1%. However, the preparation of perovskite thin films is affected by many factors, which can easily lead to defects of varying degrees, affecting the quality of the film and thus reducing the performance of the cells. Summary of the Invention

[0003] Therefore, it is necessary to provide a solar cell and its preparation method, as well as a photovoltaic module, to passivate internal defects in perovskite thin films and improve cell performance.

[0004] One object of the present invention is to provide a solar cell, the solution of which is as follows:

[0005] A solar cell includes a first electrode layer, a perovskite light-absorbing layer, and a second electrode layer stacked sequentially.

[0006] The perovskite light-absorbing layer comprises a perovskite material and a dopant doped in the perovskite material, wherein the dopant has the structure shown in formula (1):

[0007] ;

[0008] Wherein, R1 is selected from hydrogen atom, halogen, carbonyl, substituted or unsubstituted C1~C10 alkyl, ester, carboxyl, amide, amino, methylthio; R2 is selected from hydrogen atom, substituted or unsubstituted C6~C20 aryl, substituted or unsubstituted C1~C10 alkyl, substituted or unsubstituted C2~C20 heteroaryl, hydroxyl, carboxyl; R3 is selected from hydrogen atom, halogen, substituted or unsubstituted C1~C10 alkyl, cyano.

[0009] In one embodiment, the dopant is selected from one or more of methylisothiazolinone, isothiazol-3-one, 4,5-dichloro-2-methyl-4-isothiazolin-3-one, and 4-bromo-5-methylisothiazolin-3(2H)-one.

[0010] In one embodiment, the amount of the dopant is 0.1% to 2% of the amount of the perovskite material.

[0011] In one embodiment, the perovskite light-absorbing layer comprises perovskite material ABX3; wherein A includes one or more of cesium ions, rubidium ions, potassium ions, methylamine ions, formamidinium ions, methylenediamine ions, benzylamidinium cations, and guanidine cations; B includes one or more of lead ions, copper ions, zinc ions, gallium ions, tin ions, and calcium ions; and X includes one or more of fluoride ions, chloride ions, bromide ions, iodide ions, thiocyanate ions, tetrafluoroborate ions, hexafluorophosphate ions, formate ions, and acetate ions.

[0012] In one embodiment, the material of the first electrode layer includes one or more of indium tin oxide, aluminum-doped zinc oxide, indium-doped zinc oxide, fluorine-doped tin oxide, indium tungsten oxide, and indium cerium oxide.

[0013] In one embodiment, the material of the second electrode layer includes one or more of silver, copper, conductive metal oxides, and conductive carbon.

[0014] In one embodiment, the solar cell further includes a hole transport layer disposed between the perovskite light-absorbing layer and the first electrode layer.

[0015] In one embodiment, the solar cell further includes an electron transport layer disposed between the perovskite light-absorbing layer and the second electrode layer.

[0016] In one embodiment, the solar cell further includes a hole-blocking layer disposed between the electron transport layer and the second electrode layer.

[0017] In one embodiment, the material of the hole transport layer includes one or more of nickel oxide, cuprous thiocyanate, molybdenum oxide, cuprous iodide, copper oxide, vanadium pentoxide, molybdenum disulfide, manganese disulfide, PTAA, PEDOT:PSS, Spiro-OMeTAD, Spiro-TTB, (MeO-)2PACz, (MeO-)4PACz, F4-TCNQ, and P3HT.

[0018] In one embodiment, the material of the electron transport layer includes one or more of zinc oxide, tin oxide, titanium dioxide, strontium titanate, zinc stannate, zirconium dioxide, aluminum oxide, tungsten trioxide, cesium oxide, cadmium sulfide, cadmium selenide, barium stannate, niobium pentoxide, fullerene, and fullerene derivatives.

[0019] In one embodiment, the hole-blocking layer is made of one or more of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline and zirconium acetylacetonate.

[0020] Another object of the present invention is to provide a method for preparing a solar cell, the scheme of which is as follows:

[0021] A method for preparing a solar cell includes the following steps:

[0022] Provide a first electrode layer;

[0023] A perovskite light-absorbing layer is prepared on the first electrode layer. The perovskite light-absorbing layer comprises a perovskite material and a dopant doped in the perovskite material. The dopant has the structure shown in formula (1):

[0024] ;

[0025] Wherein, R1 is selected from hydrogen atom, halogen, carbonyl, substituted or unsubstituted C1~C10 alkyl, ester, carboxyl, amide, amino, methylthio; R2 is selected from hydrogen atom, substituted or unsubstituted C6~C20 aryl, substituted or unsubstituted C1~C10 alkyl, substituted or unsubstituted C2~C20 heteroaryl, hydroxyl, carboxyl; R3 is selected from hydrogen atom, halogen, substituted or unsubstituted C1~C10 alkyl, cyano;

[0026] A second electrode layer is prepared on the perovskite light-absorbing layer.

[0027] In one embodiment, the steps for preparing the perovskite light-absorbing layer include:

[0028] The dopant and perovskite precursor are mixed and dissolved in a solvent to obtain a precursor solution;

[0029] The precursor solution is coated onto the first electrode layer;

[0030] Annealing process is performed to form the perovskite light-absorbing layer.

[0031] Another object of the present invention is to provide a photovoltaic module, the solution of which is as follows:

[0032] A photovoltaic module includes a first encapsulation component, a second encapsulation component, and the solar cell or a solar cell prepared by the aforementioned preparation method, wherein the solar cell is disposed between the first encapsulation component and the second encapsulation component.

[0033] Compared with traditional methods, the above-mentioned solar cells, their fabrication methods, and photovoltaic modules have the following advantages:

[0034] The aforementioned solar cell incorporates dopants in its perovskite light-absorbing layer. These dopants contain sulfur atoms, which act as Lewis bases to induce uniform crystallization of the film. They also contain C=O groups, enabling chemical interactions with organic salt ions (such as formamidinium ions) in the perovskite material. This reduces the reaction rate between these organic salt ions and other components (such as PbI₂), thus slowing down the crystallization process of the perovskite film. During the crystallization process, these dopants regulate the growth kinetics of the perovskite material, effectively passivating internal defects and optimizing the surface morphology of the perovskite film, thereby improving its crystallinity.

[0035] The addition of the aforementioned dopants to the perovskite light-absorbing layer of the solar cell can improve its electrical performance, such as open-circuit voltage, short-circuit current, fill factor, and photoelectric conversion efficiency.

[0036] The aforementioned dopants have simple molecular structures and are inexpensive. Adding these dopants can avoid significantly increasing the production cost of solar cells.

[0037] The aforementioned photovoltaic modules include the aforementioned solar cells or solar cells prepared by the aforementioned preparation methods, and thus possess corresponding technical features and can achieve corresponding beneficial effects. Attached Figure Description

[0038] Figure 1 This is a schematic diagram of the structure of a solar cell according to one embodiment.

[0039] Explanation of reference numerals in the attached figures:

[0040] 100. Solar cell; 110. First electrode layer; 120. Perovskite light-absorbing layer; 130. Second electrode layer; 140. Hole transport layer; 150. Electron transport layer; 160. Hole blocking layer. Detailed Implementation

[0041] To make the above-mentioned objects, features, and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of the present invention. However, the present invention can be practiced in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0042] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0043] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0044] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0045] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0046] Unless otherwise stated or in case of contradiction, the terms or phrases used herein shall have the following meanings:

[0047] The term "alkyl" refers to a saturated hydrocarbon containing a primary, secondary, tertiary, or quaternary carbon atom, or a combination thereof. Phrases containing this term, such as "C1-C5 alkyl," refer to alkyl groups containing 1 to 5 carbon atoms, and each occurrence can independently be C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, or C5 alkyl. Alkyl groups can be straight-chain or branched. Suitable examples include, but are not limited to: methyl (Me, -CH3), ethyl (Et, -CH2CH3), 1-propyl (n-Pr, n-propyl, -CH2CH2CH3), 2-propyl (i-Pr, i-propyl, -CH(CH3)2), 1-butyl (n-Bu, n-butyl, -CH2CH2CH2CH3), 2-methyl-1-propyl (i-Bu, i-butyl, -CH2CH(CH3)2), 2-butyl (s-Bu, s-butyl, -CH(CH3)CH2CH3), 2-methyl-2-propyl (t-Bu, t-butyl, -C(CH3)3), 1-pentyl (n-pentyl, -CH2CH2CH2CH2CH3), 2-pentyl (-CH(CH3)CH2CH2CH3), 3-pentyl (-CH(CH2CH3)2).

[0048] "Aryl" refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing one hydrogen atom. It can be a monocyclic aryl, fused-ring aryl, or polycyclic aryl. For polycyclic compounds, at least one ring must be an aromatic ring system. For example, "C6~C20 aryl" refers to an aryl group containing 6 to 20 carbon atoms. Each occurrence can be independently C6, C10, C14, C18, C20, etc. Suitable examples include, but are not limited to: benzene, biphenyl, naphthalene, anthracene, phenanthrene, pyrene, dinaphthalene, triphenylene oxide, and their derivatives.

[0049] "Heteroaryl" refers to an aryl group in which at least one carbon atom is replaced by a non-carbon atom, which can be an N atom, O atom, S atom, etc. For example, "C2~C20 heteroaryl" refers to a heteroaryl group containing 2 to 20 carbon atoms. Each occurrence can be independently C2 heteroaryl, C3 heteroaryl, C4 heteroaryl, C5 heteroaryl, C6 heteroaryl, C7 heteroaryl, C8 heteroaryl, etc. Suitable examples include, but are not limited to: furan, benzofuran, thiophene, benzothiophene, pyrrole, pyrazole, triazole, imidazole, oxazole, oxadiazole, thiazole, tetrazolium, indole, carbazole, pyrrole-imidazolium, pyrrole-pyrrole, thiophene-pyrrole, thiophene-thiophene, furan-pyrrole, furan-furan, thiophene-furan, benzoisoxazole, benzoisothiazolium, pyridine, pyrazine, pyrimidine, triazine, quinoline, isoquinoline, o-diazonine, quinoxaline, phenanthridine, primidine, quinazoline, and quinazolineone.

[0050] "Halogen" refers to F, Cl, Br or I.

[0051] like Figure 1 As shown, a solar cell 100 according to an embodiment of the present invention includes a first electrode layer 110, a perovskite light-absorbing layer 120 and a second electrode layer 130 stacked sequentially.

[0052] The perovskite light-absorbing layer 120 comprises perovskite material and a dopant doped in the perovskite material. The dopant has the structure shown in formula (1).

[0053]

[0054] Wherein, R1 is selected from hydrogen atom, halogen, carbonyl group, substituted or unsubstituted C1~C10 alkyl group, ester group, carboxyl group, amide group, amino group, and methylthio group. R2 is selected from hydrogen atom, substituted or unsubstituted C6~C20 aryl group, substituted or unsubstituted C1~C10 alkyl group, substituted or unsubstituted C2~C20 heteroaryl group, hydroxyl group, and carboxyl group. R3 is selected from hydrogen atom, halogen, substituted or unsubstituted C1~C10 alkyl group, and cyano group.

[0055] The dopant molecules mentioned above contain S atoms, which can act as Lewis bases to induce uniform crystallization of the film; they also contain C=O groups, which can chemically interact with organic salt ions (such as formamidinium ions) of perovskite materials, reducing the reaction rate between organic salt ions and other components (such as PbI2), thereby slowing down the crystallization process of the perovskite film and further improving the crystallization quality of the film.

[0056] The addition of the aforementioned dopants to the perovskite light-absorbing layer 120 of the solar cell 100 can improve the electrical performance of the solar cell 100, such as open-circuit voltage, short-circuit current, fill factor, and photoelectric conversion efficiency.

[0057] The aforementioned dopants have simple molecular structures and are inexpensive. Adding these dopants can avoid significantly increasing the production cost of solar cells 100.

[0058] In some examples, R1 is selected from methyl or chlorine atoms.

[0059] In some examples, R2 is selected from hydrogen atoms or methyl groups.

[0060] In some examples, R3 is selected from bromine atoms or chlorine atoms. Preferably, R3 is a bromine atom, as the presence of bromine atoms helps optimize the crystallization process, reduce non-radiative recombination centers, and form a more uniform thin film.

[0061] In some examples, the dopant is selected from one or more of methylisothiazolinone, isothiazol-3-one, 4,5-dichloro-2-methyl-4-isothiazolin-3-one, and 4-bromo-5-methylisothiazolin-3(2H)-one.

[0062] In some examples, the amount of dopant is 0.1% to 2% of the perovskite material. In some examples, the amount of dopant is 0.1% to 0.5% of the perovskite material. In some specific examples, the amount of dopant is 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%, 1.1%, 1.2%, 1.3%, 1.4%, 1.5%, 1.6%, 1.7%, 1.8%, 1.9%, 2%, etc., of the perovskite material.

[0063] Optionally, the material of the first electrode layer 110 may be one or more of oxides such as, but not limited to, indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), indium-doped zinc oxide (IZO), fluorine-doped tin oxide (FTO), indium tungsten oxide (IWO), and indium cerium oxide (ICO).

[0064] In some examples, the solar cell 100 also includes a hole transport layer 140. The hole transport layer 140 is disposed between the perovskite light-absorbing layer 120 and the first electrode layer 110.

[0065] Optionally, the hole transport layer 140 can be made of, but is not limited to, NiO. x (Nickel oxide), CuSCN (cuprous thiocyanate), MoO x (Molybdenum oxide), CuI (cuprous iodide), CuO x (Copper oxide), V2O5 (vanadium pentoxide), MoS2 (molybdenum disulfide), MnS2 (manganese disulfide), PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]), PEDOT:PSS ((poly(3,4-ethylenedioxythiophene):polystyrene sulfonic acid)), Spiro-OMeTAD (2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene), Spiro-TTB (2,2'-... One or more of the following: 7,7'-tetra(di-p-tolylamino)spiro-9,9'-difluorene, (MeO-)2PACz ([2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid), (MeO-)4PACz ([4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid), F4-TCNQ (2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone), and P3HT (poly-3-hexylthiophene).

[0066] The perovskite light-absorbing layer 120 comprises a perovskite material (ABX3). Here, A is a monovalent cation, including but not limited to one or more of cesium ions, rubidium ions, potassium ions, methylamine ions, formamidinium ions, methylenediamine ions, benzylamidinium ions, and guanidine ions. B is a divalent cation, including but not limited to one or more of lead ions, copper ions, zinc ions, gallium ions, tin ions, and calcium ions. X is a monovalent anion, including but not limited to one or more of fluoride ions, chloride ions, bromide ions, iodide ions, thiocyanate ions, tetrafluoroborate ions, hexafluorophosphate ions, formate ions, and acetate ions.

[0067] Optionally, the thickness of the perovskite light-absorbing layer 120 can be 0.1 μm to 10 μm, more specifically, for example, 0.1 μm, 0.5 μm, 1 μm, 2 μm, 4 μm, 6 μm, 8 μm, 10 μm, etc.

[0068] Optionally, the material of the second electrode layer 130 may be one or more of silver, copper, conductive metal oxides and conductive carbon, but is not limited to.

[0069] In some examples, the solar cell 100 also includes an electron transport layer 150. The electron transport layer 150 is disposed between the perovskite light-absorbing layer 120 and the second electrode layer 130.

[0070] Optionally, the material of the electron transport layer 150 may be, but is not limited to, ZnO (zinc oxide), SnO2 (tin oxide), TiO2 (titanium dioxide), SrTiO3 (strontium titanate), Zn2SnO4 (zinc stannate), ZrO2 (zirconia), Al2O3 (aluminum oxide), WO3 (tungsten trioxide), CeO2, etc. x (Cesium oxide), CdS (cadmium sulfide), CdSe (cadmium selenide), BaSnO3 (barium stannate), Nb2O5 (niobium pentoxide), C 60 One or more of (fullerene) and PCBM (fullerene derivative).

[0071] In some examples, the solar cell 100 also includes a hole blocking layer 160. The hole blocking layer 160 is disposed between the electron transport layer 150 and the second electrode layer 130.

[0072] Optionally, the hole blocking layer 160 may be made of one or more of, but not limited to, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) and zirconium acetylacetonate.

[0073] Furthermore, the present invention also provides a method for preparing a solar cell 100 according to any of the above examples.

[0074] One embodiment of the method for fabricating a solar cell 100 includes the following steps:

[0075] Step S1: Provide the first electrode layer 110.

[0076] Step S2: Prepare a perovskite light-absorbing layer 120 on the first electrode layer 110.

[0077] Step S3: Prepare a second electrode layer 130 on the perovskite light-absorbing layer 120.

[0078] The above-described method for preparing the solar cell 100 involves adding the aforementioned dopant to the perovskite light-absorbing layer 120. The dopant molecules contain sulfur atoms, which can act as Lewis bases to induce uniform crystallization of the thin film; they also contain C=O groups, which can chemically interact with organic salt ions (such as formamidinium ions) in the perovskite material, reducing the reaction rate between these organic salt ions and other components (such as PbI2), thereby slowing down the crystallization process of the perovskite thin film and further improving the crystallization quality of the film. Therefore, the above-described method for preparing the solar cell 100 can improve the electrical performance of the solar cell 100, including open-circuit voltage, short-circuit current, fill factor, and photoelectric conversion efficiency.

[0079] In some examples, step S2 includes:

[0080] Step S21: Mix and dissolve the dopant and perovskite precursor in a solvent to obtain a precursor solution.

[0081] Step S22: The precursor solution is coated onto the first electrode layer 110.

[0082] Step S23: Annealing treatment to form a perovskite light-absorbing layer 120.

[0083] Furthermore, the present invention also provides a photovoltaic module.

[0084] One embodiment of the photovoltaic module includes a first encapsulation component, a second encapsulation component, and a solar cell 100 of any of the above examples or a solar cell 100 prepared by any of the above examples. The solar cell 100 is disposed between the first encapsulation component and the second encapsulation component.

[0085] The aforementioned photovoltaic modules include the aforementioned solar cells or solar cells prepared by the aforementioned preparation methods, and thus possess corresponding technical features and can achieve corresponding beneficial effects.

[0086] The following specific embodiments further illustrate the present invention. These specific embodiments are provided to better understand the present invention, but are not intended to limit the scope of the invention and do not constitute a limitation on its content or protection.

[0087] Example 1

[0088] The method for preparing a solar cell provided in this embodiment includes the following steps:

[0089] Step 1: Obtain ITO conductive glass as the first electrode layer, and ultrasonically clean it for 15 minutes each with deionized water, acetone and isopropanol, respectively. After drying in a drying oven at 75°C, it is then treated in an ultraviolet ozone machine for 25 minutes to remove organic impurities on its surface and optimize its surface wettability.

[0090] Step 2: Dissolve 1 mg of (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl)phosphonic acid in 1 mL of isopropanol to prepare a hole transport material solution. Coat the solution onto the first electrode layer and then anneal at 100°C for 10 minutes to form a hole transport layer with a thickness of 3 nm.

[0091] Step 3: Dissolve 722.08 mg of lead iodide, 238.50 mg of methyl iodide, and 1 mg of dopant methylisothiazolinone in 1 mL of N,N-dimethylformamide (DMF) and stir at room temperature until completely dissolved to obtain a perovskite precursor solution. In a nitrogen glove box, add 30 μL of the perovskite precursor solution dropwise onto the hole transport layer. Spin-coat at 1000 rpm for 10 s, then at 5000 rpm for 30 s. During this process, rapidly add 125 μL of chlorobenzene at 25 s. Then anneal at 100°C for 40 min on a hot plate to form a perovskite light-absorbing layer with a thickness of 500 nm. The amount of dopant is 0.1% of the amount of perovskite material.

[0092] Step 4: Dissolve 20 mg of methyl methane fullerene phenyl-C61-butyrate (PCBM) in 1 mL of chlorobenzene and stir at room temperature to obtain an electron transport material solution. Take 30 μL of the electron transport material solution and drop it onto the above perovskite light-absorbing layer, spin-coating at 3000 rpm for 60 s to form an electron transport layer with a thickness of 30 nm.

[0093] Step 5: Dissolve 0.5 mg of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline in 1 mL of isopropanol and stir at room temperature to obtain the hole-blocking layer solution. Take 40 μL of the hole-blocking layer solution and add it dropwise onto the above electron transport layer, spin-coating at 5000 rpm for 35 s to form a hole-blocking layer with a thickness of 6 nm.

[0094] Step 6: Transfer the device to the vacuum coating instrument and evacuate to 3×10⁻⁶. -4 At Pa, silver is vapor-deposited to form a second electrode layer with a thickness of 100 nm.

[0095] Example 2

[0096] The only difference between this embodiment and Embodiment 1 is that in step 3, the dopant is isothiazol-3-one.

[0097] Example 3

[0098] The only difference between this embodiment and Embodiment 1 is that in step 3, the dopant is 4,5-dichloro-2-methyl-4-isothiazolin-3-one.

[0099] Example 4

[0100] The only difference between this embodiment and Embodiment 1 is that in step 3, the dopant is 4-bromo-5-methylisothiazol-3(2H)-one.

[0101] Example 5

[0102] The only difference between this embodiment and Embodiment 1 is that in step 3, the amount of dopant is 0.5% of the amount of perovskite material.

[0103] Example 6

[0104] The only difference between this embodiment and Embodiment 1 is that in step 3, the amount of dopant is 2% of the amount of perovskite material.

[0105] Comparative Example 1

[0106] The only difference between this comparative example and Example 1 is that no dopant is added to the perovskite light-absorbing layer in step 3.

[0107] The electrical performance of the solar cells prepared in the above embodiments and comparative examples was tested. The test results are shown in Table 1.

[0108] Table 1 Performance test results of solar cells prepared in the examples and comparative examples

[0109]

[0110] As shown in Table 1, compared to Comparative Example 1, the addition of the aforementioned dopants to the perovskite light-absorbing layer in Examples 1-6 improves the electrical properties of the solar cells, including open-circuit voltage, short-circuit current, fill factor, and photoelectric conversion efficiency. Among them, the solar cell prepared in Example 4 exhibits particularly outstanding fill factor and photoelectric conversion efficiency.

[0111] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0112] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.

Claims

1. A solar cell, characterized in that, It includes a first electrode layer, a perovskite light-absorbing layer, and a second electrode layer that are stacked sequentially. The perovskite light-absorbing layer comprises a perovskite material and a dopant doped in the perovskite material, wherein the dopant has the structure shown in formula (1): ； Wherein, R1 is selected from hydrogen atom, halogen, carbonyl, substituted or unsubstituted C1~C10 alkyl, ester, carboxyl, amide, amino, methylthio; R2 is selected from hydrogen atom, substituted or unsubstituted C6~C20 aryl, substituted or unsubstituted C1~C10 alkyl, substituted or unsubstituted C2~C20 heteroaryl, hydroxyl, carboxyl; R3 is selected from hydrogen atom, halogen, substituted or unsubstituted C1~C10 alkyl, cyano.

2. The solar cell as described in claim 1, characterized in that, The dopant is selected from one or more of methylisothiazolinone, isothiazol-3-one, 4,5-dichloro-2-methyl-4-isothiazolin-3-one, and 4-bromo-5-methylisothiazolin-3(2H)-one.

3. The solar cell as described in claim 1, characterized in that, The amount of the dopant is 0.1% to 2% of the amount of the perovskite material.

4. The solar cell as described in claim 1, characterized in that, The solar cell meets at least one of the following characteristics (1) to (3): (1) The perovskite light-absorbing layer comprises perovskite material ABX3; wherein, A includes one or more of cesium ions, rubidium ions, potassium ions, methylamine ions, formamidinium ions, methylenediamine ions, benzylamidinium cations and guanidine cations; B includes one or more of lead ions, copper ions, zinc ions, gallium ions, tin ions and calcium ions; X includes one or more of fluoride ions, chloride ions, bromide ions, iodide ions, thiocyanate ions, tetrafluoroborate ions, hexafluorophosphate ions, formate ions and acetate ions; (2) The material of the first electrode layer includes one or more of indium tin oxide, aluminum-doped zinc oxide, indium-doped zinc oxide, fluorine-doped tin oxide, indium tungsten oxide, and indium cerium oxide; (3) The material of the second electrode layer includes one or more of silver, copper, conductive metal oxide and conductive carbon.

5. The solar cell according to any one of claims 1 to 4, characterized in that, The solar cell further includes a hole transport layer, which is disposed between the perovskite light-absorbing layer and the first electrode layer; And / or, the solar cell further includes an electron transport layer disposed between the perovskite light-absorbing layer and the second electrode layer.

6. The solar cell as described in claim 5, characterized in that, The solar cell includes the electron transport layer and also includes a hole blocking layer disposed between the electron transport layer and the second electrode layer.

7. The solar cell as claimed in claim 6, characterized in that, The solar cell meets at least one of the following characteristics (1) to (3): (1) The material of the hole transport layer includes one or more of nickel oxide, cuprous thiocyanate, molybdenum oxide, cuprous iodide, copper oxide, vanadium pentoxide, molybdenum disulfide, manganese disulfide, PTAA, PEDOT:PSS, Spiro-OMeTAD, Spiro-TTB, (MeO-)2PACz, (MeO-)4PACz, F4-TCNQ and P3HT; (2) The material of the electron transport layer includes one or more of zinc oxide, tin oxide, titanium dioxide, strontium titanate, zinc stannate, zirconium dioxide, aluminum oxide, tungsten trioxide, cesium oxide, cadmium sulfide, cadmium selenide, barium stannate, niobium pentoxide, fullerene and fullerene derivatives; (3) The material of the hole blocking layer includes one or more of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline and zirconium acetylacetonate.

8. A method for preparing a solar cell, characterized in that, Includes the following steps: Provide a first electrode layer; A perovskite light-absorbing layer is prepared on the first electrode layer. The perovskite light-absorbing layer comprises a perovskite material and a dopant doped in the perovskite material. The dopant has the structure shown in formula (1): ； Wherein, R1 is selected from hydrogen atom, halogen, carbonyl, substituted or unsubstituted C1~C10 alkyl, ester, carboxyl, amide, amino, methylthio; R2 is selected from hydrogen atom, substituted or unsubstituted C6~C20 aryl, substituted or unsubstituted C1~C10 alkyl, substituted or unsubstituted C2~C20 heteroaryl, hydroxyl, carboxyl; R3 is selected from hydrogen atom, halogen, substituted or unsubstituted C1~C10 alkyl, cyano; A second electrode layer is prepared on the perovskite light-absorbing layer.

9. The method for preparing a solar cell as described in claim 8, characterized in that, The steps for preparing the perovskite light-absorbing layer include: The dopant and perovskite precursor are mixed and dissolved in a solvent to obtain a precursor solution; The precursor solution is coated onto the first electrode layer; Annealing process is performed to form the perovskite light-absorbing layer.

10. A photovoltaic module, characterized in that, The device includes a first encapsulation component, a second encapsulation component, and a solar cell according to any one of claims 1 to 7 or a solar cell prepared by the preparation method according to claim 8 or 9, wherein the solar cell is disposed between the first encapsulation component and the second encapsulation component.

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