Solar cell and preparation method thereof, photovoltaic module and photovoltaic device

Abstract

The invention relates to the technical field of solar cells, and discloses a solar cell and a preparation method thereof, a photovoltaic module and a photovoltaic device. The solar cell comprises a first electrode layer, a first carrier transmission layer, a first light absorption layer, a second carrier transmission layer, a composite structure, a third carrier transmission layer, a second light absorption layer, a fourth carrier transmission layer and a second electrode layer which are sequentially arranged in the first direction. Wherein the composite structure comprises a plurality of conductive layers and an insulating layer, the plurality of conductive layers are discontinuously arranged in a second direction, the insulating layer is arranged among the plurality of conductive layers, and the second direction is perpendicular to the first direction. According to the technical scheme, the performance of the solar cell can be improved.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a solar cell and a preparation method thereof, a photovoltaic module and a photovoltaic device. Background Art

[0002] In recent years, global energy shortages and environmental pollution have become increasingly prominent, and solar cells, as an ideal renewable energy source, have garnered increasing attention. Solar cells, also known as photovoltaic cells, are devices that convert light energy directly into electrical energy through the photoelectric or photochemical effects. Within a few years of their development, they have rapidly achieved high photoelectric conversion efficiencies, demonstrating promising application prospects.

[0003] With the development of solar cell technology, people have higher and higher requirements on the performance of solar cells, such as efficiency and stability of solar cells. Therefore, how to improve the performance of solar cells is a technical problem that needs to be solved urgently. Summary of the Invention

[0004] The present application is made in view of the above-mentioned problems, and its purpose is to provide a solar cell and a preparation method thereof, a photovoltaic module and a photovoltaic device to improve the performance of the solar cell.

[0005] In a first aspect, a solar cell is provided, comprising: a first electrode layer, a first carrier transport layer, a first light absorption layer, a second carrier transport layer, a composite structure, a third carrier transport layer, a second light absorption layer, a fourth carrier transport layer and a second electrode layer arranged in sequence along a first direction; wherein the composite structure comprises a plurality of conductive layers and an insulating layer, in a second direction, the plurality of conductive layers are discontinuously arranged, the insulating layer is arranged between the plurality of conductive layers, and the second direction is perpendicular to the first direction.

[0006] A solar cell in an embodiment of the present application increases the lateral resistance in the composite structure by providing a plurality of discontinuous conductive layers distributed along a second direction in the composite structure, thereby reducing the lateral current, which is beneficial to increasing the parallel resistance of the stacked cell, thereby facilitating an increase in the fill factor of the solar cell, and thereby facilitating an improvement in the efficiency of the solar cell; at the same time, an insulating layer is provided between the plurality of discontinuous conductive layers so that in the first direction, the second carrier transport layer and the third carrier transport layer, two different types of carrier transport layers in the solar cell, are in direct contact through the gaps between the plurality of discontinuous conductive layers, that is, the second carrier transport layer and the third carrier transport layer are separated by the insulating layer, which is beneficial to further improving the efficiency of the solar cell.

[0007] In a possible implementation, the conductive material of the conductive layer includes at least one of an organic conductive material and an inorganic conductive material.

[0008] In a possible implementation, the conductive material includes at least one of a transparent conductive oxide, a metal and an alloy thereof, and a carbon element material.

[0009] In one possible implementation, the transparent conductive oxide includes at least one of indium tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, aluminum-doped zinc oxide, and boron-doped zinc oxide; the metal includes at least one of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, and tungsten; and the carbon elemental material includes at least one of graphite, graphene, and carbon nanotubes.

[0010] In a possible implementation, the insulating material of the insulating layer includes at least one of metal oxide, metal fluoride, metal nitride, and organic insulating material, all of which have good insulating properties.

[0011] In a possible implementation, the insulating material includes aluminum oxide.

[0012] In a possible implementation, the thickness d1 of the conductive layer ranges from 0.1 nm to 10 nm.

[0013] In a possible implementation, the thickness d1 of the conductive layer ranges from 0.5 nm to 1.2 nm.

[0014] In a possible implementation, the thickness d2 of the insulating layer ranges from 0.1 nm to 10 nm.

[0015] In a possible implementation, the thickness d2 of the insulating layer ranges from 0.5 nm to 1.2 nm.

[0016] In the above technical solution, the thicknesses of the conductive layer and the insulating layer are set within the above ranges, which is beneficial to improving the efficiency of the solar cell.

[0017] In a possible implementation manner, the material of the first electrode layer and the second electrode layer includes at least one of a conductive oxide, a metal and an alloy thereof, and a carbon element material.

[0018] In one possible implementation, the conductive oxide includes at least one of indium tin oxide, lanthanide metal-doped indium oxide, boron-doped zinc oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, aluminum-doped zinc oxide, and gallium zinc oxide; the metal includes at least one of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, and tungsten; and the carbon material includes at least one of graphite, graphene, and carbon nanotubes. This allows for flexible selection of electrode layer materials based on actual needs.

[0019] In one possible implementation, the first carrier transport layer, the second carrier transport layer, the third carrier transport layer and the fourth carrier transport layer are hole transport layers or electron transport layers; the material of the hole transport layer includes a P-type semiconductor, and the material of the electron transport layer includes an N-type semiconductor.

[0020] In a possible implementation, the material of the hole transport layer includes at least one of the following materials and their derivatives: [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphoric acid, [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphoric acid, [4-(3,6-dibromo-9H-carbazole-9-yl)butyl]phosphoric acid, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly-3-hexylthiophene, triptycene The core of the present invention comprises triphenylamine, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-phenylamino)carbazole-spirobifluorene, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid, polythiophene, nickel oxide, molybdenum oxide, cuprous iodide, cuprous oxide; the material of the electron transport layer comprises at least one of the following materials and their derivatives: bathocuproin, [6,6]-phenyl-C61-butyric acid isomethyl ester, [6,6]-phenyl C71-butyric acid methyl ester, C60, C70, SnO x , zinc oxide, where the value of x ranges from 1.5 to 2.

[0021] The materials used as the hole transport layer or the electron transport layer can improve the efficiency of solar cells.

[0022] In a possible implementation, the first carrier transport layer is a hole transport layer, the second carrier transport layer is an electron transport layer, the third carrier transport layer is a hole transport layer, and the fourth carrier transport layer is an electron transport layer.

[0023] In a possible implementation, the material of the first light absorption layer is perovskite, and the material of the second light absorption layer is perovskite.

[0024] Perovskite materials have the advantages of high conversion efficiency, low cost, and environmental protection. They can be prepared into very thin films and applied to solar cells, which can effectively improve the efficiency of solar cells.

[0025] In a possible implementation, the first direction is the incident direction of sunlight, and the band gap of the material of the first light absorption layer is greater than the band gap of the material of the second light absorption layer.

[0026] When the first direction is the incident direction of sunlight, sunlight first irradiates the first light absorbing layer. Setting the band gap of the material of the first light absorbing layer to be larger than the band gap of the material of the second light absorbing layer is beneficial to improving the efficiency of the solar cell.

[0027] In a possible implementation, the chemical formula of the perovskite in the first light absorbing layer and the second light absorbing layer is ABX3, wherein A includes CH3(NH2)2 + 、CH(NH2)2 + 、CH3NH2 + 、Li + 、Na + , K + , Rb + 、Cs + At least one of, B includes Pb + 、Be 2+ Mg 2+ , Ca 2+ 、Sr 2+ 、Ba 2+ 、Zn 2+ 、Ge 2+ 、Fe 2+ 、Co 2+ 、Ni 2+ At least one of, X includes Cl - Br - , I - 、SCN - 、CNO - 、OCN - 、OSCN - SH - OH - 、CP - 、CN - 、SeCN - 、N3 - 、NO2 - At least one of .

[0028] In a possible implementation, the solar cell further includes a first hole blocking layer, where the first hole blocking layer is located between the first light absorbing layer and the second carrier transporting layer.

[0029] In a possible implementation, the solar cell further includes a second hole blocking layer, where the second hole blocking layer is located between the second light absorbing layer and the fourth carrier transport layer.

[0030] In the above technical solution, a hole blocking layer is provided between the light absorbing layer and the electron transport layer, which is beneficial to improving the electron transport between the electron transport layer and the light absorbing layer, thereby improving the efficiency of the solar cell.

[0031] In a possible implementation, the material of the first hole blocking layer and the second hole blocking layer includes at least one of fullerene and its derivatives, and SnOx, where the value of x ranges from 1.5 to 2.

[0032] In a second aspect, a method for preparing a solar cell is provided, comprising: providing a first electrode layer, a first carrier transport layer, a first light absorption layer, a second carrier transport layer, a composite structure, a third carrier transport layer, a second light absorption layer, a fourth carrier transport layer and a second electrode layer arranged in sequence along a first direction; wherein the composite structure comprises a plurality of conductive layers and an insulating layer, in a second direction, the plurality of conductive layers are discontinuously arranged, the insulating layer is arranged between the plurality of conductive layers, and the second direction is perpendicular to the first direction.

[0033] In one possible implementation, the method of providing a first electrode layer, a first carrier transport layer, a first light absorbing layer, a second carrier transport layer, a composite structure, a third carrier transport layer, a second light absorbing layer, a fourth carrier transport layer and a second electrode layer arranged in sequence along a first direction includes: providing the first electrode layer; preparing the first carrier transport layer on the first electrode layer, wherein the first carrier transport layer is a hole transport layer; preparing the first light absorbing layer on the first carrier transport layer; preparing the second carrier transport layer on the first light absorbing layer, wherein the second carrier transport layer is an electron transport layer; preparing the multiple conductive layers and the insulating layer on the second carrier transport layer to obtain the composite structure; preparing the third carrier transport layer on the composite structure, wherein the third carrier transport layer is a hole transport layer; preparing the second light absorbing layer on the third carrier transport layer; preparing the fourth carrier transport layer on the second light absorbing layer, wherein the fourth carrier transport layer is an electron transport layer; and preparing the second electrode layer on the fourth carrier transport layer.

[0034] In one possible implementation, the preparing the multiple conductive layers and the insulating layer on the second carrier transport layer to obtain the composite structure includes: depositing a conductive material on the second carrier transport layer to obtain the multiple conductive layers; and depositing an insulating material on the second carrier transport layer to obtain the insulating layer to obtain the composite structure.

[0035] In one possible implementation, the preparing the multiple conductive layers and the insulating layer on the second carrier transport layer includes: depositing a conductive material on the second carrier transport layer to obtain the multiple conductive layers; depositing an insulating material on the second carrier transport layer and the multiple conductive layers to obtain a composite structure to be processed; and using hydrofluoric acid to clean the composite structure to be processed to obtain the composite structure.

[0036] In a possible implementation, the thickness d1 of the conductive layer ranges from 0.1 nm to 10 nm.

[0037] In a possible implementation, the thickness d1 of the conductive layer ranges from 0.5 nm to 1.2 nm.

[0038] In a possible implementation, the thickness d2 of the insulating layer ranges from 0.1 nm to 10 nm.

[0039] In a possible implementation, the thickness d2 of the insulating layer ranges from 0.5 nm to 1.2 nm.

[0040] In a third aspect, a photovoltaic assembly is provided, comprising the solar cell according to the first aspect and any possible implementation thereof.

[0041] In a fourth aspect, a photovoltaic device is provided, comprising the photovoltaic assembly in the third aspect. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments of the present application. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the drawings without creative work.

[0043] Figure 1 A schematic structural diagram of a solar cell according to an embodiment of the present application;

[0044] Figure 2 A yoz cross-sectional view of a composite structure of a solar cell according to an embodiment of the present application;

[0045] Figure 3 A schematic structural diagram of a solar cell according to an embodiment of the present application;

[0046] Figure 4 FIG. 1 is a schematic diagram of a method for preparing a solar cell according to an embodiment of the present application. DETAILED DESCRIPTION

[0047] The following detailed description specifically discloses the embodiments of the solar cell and its preparation method, photovoltaic module, and photovoltaic device of the present application, with appropriate reference to the accompanying drawings. However, there may be cases where unnecessary detailed descriptions are omitted. For example, there may be cases where detailed descriptions of well-known matters and repeated descriptions of actually the same structure are omitted. This is to avoid the following description from becoming unnecessarily lengthy and to facilitate the understanding of those skilled in the art. In addition, the drawings and the following description are provided to enable those skilled in the art to fully understand the present application and are not intended to limit the subject matter described in the claims.

[0048] " range " disclosed in the present application is limited in the form of lower limit and upper limit, and given range is limited by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundary of special range. The scope limited in this way can be to include end value or not include end value, and can be arbitrarily combined, that is, any lower limit can form a range with any upper limit combination. For example, if the scope of 60-120 and 80-110 is listed for specific parameters, it is understood that the scope of 60-110 and 80-120 is also expected. In addition, if the minimum range value 1 and 2 are listed, and if the maximum range value 3,4 and 5 are listed, then the following range can all be expected: 1-3, 1-4, 1-5, 2-3, 2-4 and 2-5. In this application, unless otherwise specified, the numerical range " ab " represents the abbreviation of any real number combination between a and b, wherein a and b are all real numbers. For example, a numerical range of "0-5" indicates that all real numbers between "0-5" are listed herein, and "0-5" is simply an abbreviation for these numerical combinations. Furthermore, when a parameter is expressed as an integer ≥ 2, this is equivalent to disclosing that the parameter is, for example, an integer of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0049] Unless otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution.

[0050] Unless otherwise specified, all technical features and optional technical features of this application can be combined with each other to form a new technical solution.

[0051] Unless otherwise specified, all steps of the present application may be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially. For example, the method may further include step (c), indicating that step (c) may be added to the method in any order, for example, the method may include steps (a), (b) and (c), or may include steps (a), (c) and (b), or may include steps (c), (a) and (b), etc.

[0052] If there is no special explanation, the "include" and "comprising" mentioned in this application are open-ended. For example, the "include" and "comprising" may mean that other components not listed may also be included or comprised.

[0053] Unless otherwise specified, the term "and / or" is inclusive in this application. For example, the phrase "A and / or B" means "A, B, or both A and B." More specifically, the condition "A or B" is satisfied if any of the following conditions are met: A is true (or exists) and B is false (or does not exist); A is false (or does not exist) and B is true (or exists); or both A and B are true (or exist).

[0054] Solar cells have good application prospects due to their high photoelectric conversion efficiency. In solar cells, the arrangement of each film layer and the arrangement of the cell structure are crucial to the performance of the solar cell (such as stability and efficiency). For example, the arrangement of a single light-absorbing layer in a single-junction solar cell limits the improvement of its photoelectric conversion efficiency, so stacked solar cells came into being. Stacked solar cells are based on the matching of the spectral distribution of sunlight and the energy band width of different semiconductor materials, and maximize the use of solar energy by stacking multiple layers to improve the photoelectric conversion efficiency. Generally, in a stacked solar cell, a composite structure is provided between two sub-cells to connect the two sub-cells in series. The composite structure is located between two different types of carrier transport layers, and the electrons in the carrier transport layer on one side and the holes in the carrier transport layer on the other side are extracted into the composite structure for recombination annihilation to improve the transmission of carriers in the external circuit of the solar cell. In order to further improve the efficiency of the solar cell, the conductive layer in the composite structure is designed to be a discontinuous structure to increase the lateral resistance of the composite structure. However, this discontinuous structural setting will lead to the risk of direct contact between the different types of carrier transport layers on both sides of the composite structure, which will affect the performance of the solar cell.

[0055] In view of this, an embodiment of the present application provides a solar cell, comprising a first electrode layer, a first carrier transport layer, a first light absorption layer, a second carrier transport layer, a composite structure, a third carrier transport layer, a second light absorption layer, a fourth carrier transport layer, and a second electrode layer, arranged in sequence along a first direction; wherein the composite structure comprises a plurality of conductive layers and an insulating layer, wherein the plurality of conductive layers are discontinuously arranged in a second direction, and the insulating layer is arranged between the plurality of conductive layers, and the second direction is perpendicular to the first direction. In the technical solution of the embodiment of the present application, the composite structure includes a plurality of discontinuous conductive layers distributed along the second direction, so that the lateral resistance in the composite structure is increased, thereby reducing the lateral current, which is beneficial to increase the parallel resistance of the stacked cell, thereby facilitating an increase in the fill factor of the solar cell, and thus improving the efficiency of the solar cell; at the same time, an insulating layer is provided between the plurality of discontinuous conductive layers, so that in the first direction, the two different types of carrier transport layers in the solar cell, the second carrier transport layer and the third carrier transport layer, are separated by the insulating layer, which is beneficial to further improve the efficiency of the solar cell.

[0056] [Solar Cell]

[0057] Figure 1 is a schematic structural diagram of a solar cell according to an embodiment of the present application. Figure 2 yoz cross-sectional view of the composite structure of a solar cell according to an embodiment of the present application. Figure 1 As shown, the solar cell 10 includes a first electrode layer 101, a first carrier transport layer 102, a first light absorption layer 103, a second carrier transport layer 104, a composite structure 105, a third carrier transport layer 106, a second light absorption layer 107, a fourth carrier transport layer 108 and a second electrode layer 109 arranged in sequence along a first direction.

[0058] The first direction may be the thickness direction of the solar cell, for example, Figure 1 As shown, the first direction is the x direction (the direction indicated by the arrow).

[0059] Specifically, the composite structure 105 includes a plurality of conductive layers 1051 and an insulating layer 1052. In the second direction, the plurality of conductive layers 1051 are discontinuously arranged, and the insulating layer 1052 is arranged between the plurality of conductive layers 1051. The second direction is perpendicular to the first direction. Figure 1 As shown, the second direction is the y direction.

[0060] The composite structure 105 includes a plurality of discontinuous conductive layers 1051 distributed along the second direction, which increases the lateral resistance in the composite structure 105, thereby reducing the lateral current, which is beneficial to increasing the parallel resistance of the stacked cell, thereby increasing the fill factor of the solar cell, and thus improving the efficiency of the solar cell. In the second direction, an insulating layer 1052 is provided between the plurality of discontinuous conductive layers 1051. In this way, in the first direction, the second carrier transport layer 104 and the third carrier transport layer 106 do not directly contact each other through the gaps between the plurality of discontinuous conductive layers 1051. In other words, the second carrier transport layer 104 and the third carrier transport layer 106 are separated by the insulating layer, which is beneficial to increasing the overall voltage of the solar cell and further improving the efficiency of the solar cell.

[0061] The efficiency of the solar cell 10 may refer to the photoelectric conversion efficiency of the solar cell 10 , which refers to the ratio of the maximum output power of the cell when illuminated by light to the power of the incident light irradiating the cell.

[0062] The fill factor of solar cell 10 can be used to measure the photoelectric conversion efficiency of solar cell 10. Generally speaking, a larger fill factor indicates a higher photoelectric conversion efficiency. The fill factor is related to current density, which refers to the current per unit area. A larger current-carrying area indicates a higher fill factor.

[0063] The first electrode layer 101 and the second electrode layer 109 are conductive film layers. Connecting the first electrode layer 101 and the second electrode layer 109 can generate photocurrent, thereby supplying power to an electrical device.

[0064] The solar cell 10 provided in an embodiment of the present application includes a first electrode layer 101, a first carrier transport layer 102, a first light absorption layer 103, a second carrier transport layer 104, a composite structure 105, a third carrier transport layer 106, a second light absorption layer 107, a fourth carrier transport layer 108 and a second electrode layer 109 arranged in sequence along a first direction; wherein the composite structure 105 includes a plurality of conductive layers 1051 and an insulating layer 1052, and in a second direction, the plurality of conductive layers 1051 are discontinuously arranged, and the insulating layer 1052 is arranged between the plurality of conductive layers 1051, and the second direction is perpendicular to the first direction. In the technical solution of the embodiment of the present application, by providing a composite structure 105 including a plurality of discontinuous conductive layers 1051 distributed along the second direction, the lateral resistance in the composite structure 105 is increased, thereby reducing the lateral current, which is beneficial to increase the parallel resistance of the stacked battery, thereby increasing the fill factor of the solar cell, and thus improving the efficiency of the solar cell; at the same time, an insulating layer 1052 is provided between the plurality of discontinuous conductive layers 1051, so that in the first direction, the two different types of carrier transport layers, the second carrier transport layer 104 and the third carrier transport layer 106 in the solar cell are separated by the insulating layer 1052, which is beneficial to further improve the efficiency of the solar cell.

[0065] The following combination Figure 2 , specifically describing the composite structure 105 of the solar cell according to an embodiment of the present application.

[0066] like Figure 2 As shown, the composite structure 105 includes a plurality of conductive layers 1051 and an insulating layer 1052. In the second direction, the plurality of conductive layers 1051 are dispersed and arranged, and the second direction is perpendicular to the x direction. Figure 2 , the second direction is the y direction.

[0067] For example Figure 2 As shown, in the third direction, the plurality of conductive layers are discontinuously arranged, and the third direction is perpendicular to the x-direction and the y-direction. Figure 2 In the embodiment, the third direction is the z direction. That is, on the yoz plane, multiple conductive layers 1051 are dispersed. At the same time, the gaps between the multiple conductive layers 1051 are filled with insulating material to form insulating layers 1052.

[0068] Figure 2In the figure, the orthographic projection of the conductive layer 1051 on the yoz plane is a circle for exemplary description. The conductive layer 1051 may be cylindrical, but the shape of the conductive layer 1051 is not limited thereto. For example, the conductive layer 1051 may also be a cuboid, an irregular body, etc.

[0069] In some embodiments, the conductive material of the conductive layer 1051 includes at least one of an organic conductive material and an inorganic conductive material.

[0070] Optionally, the conductive material includes at least one of transparent conductive oxides, metals and alloys thereof, and carbon single-element materials.

[0071] Specifically, the transparent conductive oxide includes at least one of indium tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, aluminum-doped zinc oxide, and boron-doped zinc oxide; the metal includes at least one of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, and tungsten; and the carbon elemental material includes at least one of graphite, graphene, and carbon nanotubes.

[0072] In some embodiments, the insulating material of the insulating layer 1052 may include at least one of metal oxide, metal fluoride, metal nitride, and an organic insulating material. For example, the insulating material includes aluminum oxide.

[0073] All of the above substances have good insulating properties.

[0074] Exemplarily, the conductive layer material is indium tin oxide, the insulating layer material is aluminum oxide, and indium tin oxide and aluminum oxide are used in combination.

[0075] Exemplarily, the conductive layer material is tungsten-doped indium oxide, the insulating layer material is aluminum oxide, and tungsten-doped indium oxide and aluminum oxide are used in combination.

[0076] In some embodiments, as Figure 1 As shown, the thickness d1 of the conductive layer 1051 ranges from 0.1 nm to 10 nm. Optionally, the thickness d1 ranges from 0.5 nm to 1.2 nm.

[0077] Specifically, the thickness d1 of the conductive layer 1051 can be 0.1 nm, 0.5 nm, 1 nm, 1.2 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or a value between the above values.

[0078] In some embodiments, continue to refer to Figure 1 The thickness d2 of the insulating layer 1052 ranges from 0.1 nm to 10 nm. Optionally, the thickness d2 ranges from 0.5 nm to 1.2 nm.

[0079] Specifically, the thickness d2 of the insulating layer 1052 can be 0.1 nm, 0.5 nm, 1 nm, 1.2 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or a value between any of the above values.

[0080] In the above technical solution, the thicknesses of the conductive layer 1051 and the insulating layer 1052 are set within the above ranges, which is beneficial to improving the efficiency of the solar cell.

[0081] In some embodiments, the material of the first electrode layer 101 and the second electrode layer 109 includes at least one of a conductive oxide, a metal and an alloy thereof, and a carbon element.

[0082] Optionally, the conductive oxide includes at least one of indium tin oxide, lanthanide metal-doped indium oxide, boron-doped zinc oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, aluminum-doped zinc oxide, and gallium zinc oxide; optionally, the metal includes at least one of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, and tungsten; and the carbon material includes at least one of graphite, graphene, and carbon nanotubes. This allows for flexible selection of the material type for the electrode layer based on actual needs.

[0083] Optionally, in some embodiments, the thickness of the first electrode layer 101 ranges from 10 nm to 100 nm. For example, the thickness of the first electrode layer 101 can be 10 nm, 15 nm, 30 nm, 50 nm, 80 nm, 90 nm, 100 nm, or any value within the above range.

[0084] Optionally, in some embodiments, the thickness of the second electrode layer 109 ranges from 10 nm to 100 nm. For example, the thickness of the second electrode layer 109 can be 10 nm, 15 nm, 30 nm, 50 nm, 80 nm, 90 nm, 100 nm, or any value within the above range.

[0085] In the technical solution of the embodiment of the present application, the thickness of each film layer can be measured by using a step profiler. For the specific measurement method, reference can be made to the known measurement method of the step profiler.

[0086] In some embodiments, the first carrier transport layer 102 , the second carrier transport layer 104 , the third carrier transport layer 106 , and the fourth carrier transport layer 108 are hole transport layers or electron transport layers.

[0087] The hole transport layer is used to transport holes, and the material of the hole transport layer includes a P-type semiconductor.

[0088] Optionally, the material of the hole transport layer includes at least one of the following materials and their derivatives: [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphoric acid, [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphoric acid, [4-(3,6-dibromo-9H-carbazole-9-yl)butyl]phosphoric acid, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly-3-hexylthiophene, triphenylamine with triptycene as the core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-phenylamino)carbazole-spirobifluorene, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid, polythiophene, nickel oxide, molybdenum oxide, cuprous iodide, and cuprous oxide;

[0089] The electron transport layer is used to transport electrons, and the material of the electron transport layer includes an N-type semiconductor.

[0090] Optionally, the material of the electron transport layer includes at least one of the following materials and their derivatives: bathocuproine, [6,6]-phenyl-C61-butyric acid isomethyl ester, [6,6]-phenyl C71-butyric acid methyl ester, C60, C70, SnO x , zinc oxide, wherein the value of x ranges from 1.5 to 2. For example, when x is 2, the material of the electron transport layer includes SnO2.

[0091] The materials used as the hole transport layer or the electron transport layer can improve the efficiency of solar cells.

[0092] In some embodiments, the first carrier transport layer 102 is a hole transport layer, the second carrier transport layer 104 is an electron transport layer, the third carrier transport layer 106 is a hole transport layer, and the fourth carrier transport layer 108 is an electron transport layer.

[0093] In some embodiments, the material of the first light absorption layer 103 is perovskite, and the material of the second light absorption layer 107 is perovskite.

[0094] Perovskite materials have the advantages of high conversion efficiency, low cost, and environmental protection. They can be prepared into very thin films and applied to solar cells, which can effectively improve the efficiency of solar cells.

[0095] In some embodiments, the first direction is the incident direction of sunlight, and the band gap of the material of the first light absorption layer 103 is larger than the band gap of the material of the second light absorption layer 107 .

[0096] The band gap refers to the energy difference between the lowest point of the conduction band and the highest point of the valence band in a semiconductor material.

[0097] Optionally, the band gap of the material of the first light absorption layer 103 is 1.6eV-2.3eV, and the band gap of the material of the second light absorption layer 107 is 1eV-1.4eV. For example, the perovskite material of the first light absorption layer 103 is a bromine-iodine mixed perovskite, and the perovskite material of the second light absorption layer 107 is a tin-lead mixed perovskite.

[0098] When the first direction is the incident direction of sunlight, sunlight first irradiates the first light absorption layer 103 . Setting the band gap of the material of the first light absorption layer 103 to be larger than the band gap of the material of the second light absorption layer 107 is beneficial to improving the efficiency of the solar cell.

[0099] In some embodiments, the chemical formula of the perovskite in the first light absorption layer 103 and the second light absorption layer 107 is ABX3, wherein A includes CH3(NH2)2 + 、CH(NH2)2 + 、CH3NH2 + 、Li + 、Na + , K + , Rb + 、Cs + At least one of, B includes Pb + 、Be 2 + Mg 2+ , Ca 2+ 、Sr 2+ 、Ba 2+ 、Zn 2+ 、Ge 2+ 、Fe 2+ 、Co 2+ 、Ni 2+ At least one of, X includes Cl - Br - , I - 、SCN - 、CNO - 、OCN - 、OSCN - SH - OH - 、CP - 、CN - 、SeCN - 、N3 - 、NO2 - In this way, it is convenient to flexibly select the specific type of perovskite according to actual needs.

[0100] Optionally, in some embodiments, the material of the second light absorption layer 107 is silicon, copper indium gallium selenide, copper gallium selenide, cadmium telluride or gallium arsenide.

[0101] Illustratively, the conductive layer material is indium tin oxide, the insulating layer material is aluminum oxide, the first light absorption layer and the second light absorption layer are both perovskite, and indium tin oxide, aluminum oxide and perovskite are used in combination.

[0102] Illustratively, the conductive layer material is tungsten-doped indium oxide, the insulating layer material is aluminum oxide, the first light-absorbing layer and the second light-absorbing layer are both perovskite, and tungsten-doped indium oxide, aluminum oxide and perovskite are used in combination.

[0103] Optionally, in some embodiments, the solar cell 10 further includes a blocking layer, such as a hole blocking layer or an electron blocking layer. Specifically, the electron blocking layer is disposed between the light absorbing layer and the hole transport layer, and the hole blocking layer is disposed between the light absorbing layer and the electron transport layer.

[0104] The electron blocking layer can transport holes, and the hole blocking layer can transport electrons.

[0105] Alternatively, as Figure 3 As shown, the solar cell 10 further includes a first hole blocking layer 110 . When the second carrier transport layer 104 is an electron transport layer, the first hole blocking layer 110 is located between the first light absorbing layer 103 and the second carrier transport layer 104 .

[0106] Optionally, continue to refer to Figure 3 The solar cell 10 further includes a second hole blocking layer 111 . When the fourth carrier transport layer 108 is an electron transport layer, the second hole blocking layer 111 is located between the second light absorbing layer 107 and the fourth carrier transport layer 108 .

[0107] In the above technical solution, a hole blocking layer is provided between the light absorbing layer and the electron transport layer, which is beneficial to improving the electron transport between the electron transport layer and the light absorbing layer, thereby improving the efficiency of the solar cell 10 .

[0108] Optionally, in some embodiments, the material of the first hole blocking layer 110 and the second hole blocking layer 111 includes at least one of fullerene and its derivatives, and SnOx, where x ranges from 1.5 to 2. For example, x may be 2, and the material of the first hole blocking layer 110 and the second hole blocking layer 111 may include SnO2.

[0109] Using the above materials as the materials for the first hole blocking layer 110 and the second hole blocking layer 111 can improve the efficiency of the solar cell 10 .

[0110] [Method for producing solar cells]

[0111] The solar cell provided in the embodiment of the present application is introduced above. The preparation method of the solar cell provided in the embodiment of the present application is introduced below, in which the parts similar to the above solar cell are not repeated here.

[0112] Figure 4 FIG. 1 is a schematic diagram of a method for preparing a solar cell according to an embodiment of the present application. Figure 4 As shown, the preparation method 400 includes: providing a first electrode layer, a first carrier transport layer, a first light absorption layer, a second carrier transport layer, a composite structure, a third carrier transport layer, a second light absorption layer, a fourth carrier transport layer and a second electrode layer arranged in sequence along a first direction.

[0113] The composite structure includes multiple conductive layers and insulating layers. In the second direction, the multiple conductive layers are discontinuously arranged, and the insulating layers are arranged between the multiple conductive layers. The second direction is perpendicular to the first direction.

[0114] The solar cell prepared by the above method has high cell efficiency.

[0115] Optionally, in some embodiments, the preparation method 400 includes: providing a first electrode layer; preparing a first carrier transport layer on the first electrode layer, the first carrier transport layer being a hole transport layer; preparing a first light absorbing layer on the first carrier transport layer; preparing a second carrier transport layer on the first light absorbing layer, the second carrier transport layer being an electron transport layer; preparing multiple conductive layers and insulating layers on the second carrier transport layer to obtain a composite structure; preparing a third carrier transport layer on the composite structure, the third carrier transport layer being a hole transport layer; preparing a second light absorbing layer on the third carrier transport layer; preparing a fourth carrier transport layer on the second light absorbing layer, the fourth carrier transport layer being an electron transport layer; and preparing a second electrode layer on the fourth carrier transport layer.

[0116] In some embodiments, the preparation method 400 includes: depositing a conductive material on the second carrier transport layer to form a plurality of conductive layers; and depositing an insulating material on the second carrier transport layer to form an insulating layer, thereby forming a composite structure. For example, the insulating material can be deposited on the second carrier transport layer using atomic deposition technology.

[0117] In some embodiments, the preparation method 400 includes: depositing a conductive material on the second carrier transport layer to obtain multiple conductive layers; depositing an insulating material on the second carrier transport layer and the multiple conductive layers to obtain a composite structure to be processed; and using hydrofluoric acid to clean the composite structure to be processed to obtain a composite structure.

[0118] It is understood that after depositing a conductive material on the second carrier transport layer to form a conductive layer, when depositing an insulating material on the second carrier transport layer, the insulating material may not only cover the second carrier transport layer but also partially cover the conductive layer, thereby affecting the carrier transport of the battery. Therefore, after depositing the insulating material, the resulting composite structure is cleaned with hydrofluoric acid (HF) to remove the insulating material covering the conductive layer.

[0119] In some embodiments, the thickness d1 of the conductive layer ranges from 0.1 nm to 10 nm. Optionally, the thickness d1 ranges from 0.5 nm to 1.2 nm.

[0120] Specifically, the thickness d1 of the conductive layer may be 0.1 nm, 0.5 nm, 1 nm, 1.2 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or a value in between.

[0121] In some embodiments, the thickness d2 of the insulating layer ranges from 0.1 nm to 10 nm. Optionally, the thickness d2 ranges from 0.5 nm to 1.2 nm.

[0122] Specifically, the thickness d2 of the insulating layer can be 0.1 nm, 0.5 nm, 1 nm, 1.2 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or a value between the above values.

[0123] In the above technical solution, the thicknesses of the conductive layer and the insulating layer are set within the above ranges, which is beneficial to improving the efficiency of the solar cell.

[0124] The present application also provides a photovoltaic module. Typically, the photovoltaic module includes the aforementioned solar cells, a welding ribbon connecting multiple solar cells, a junction box for current transmission, and a battery packaging component.

[0125] In some embodiments, the battery packaging component includes photovoltaic glass, which covers the solar cells to protect them. Photovoltaic glass has excellent light transmittance and high hardness, making it adaptable to large temperature swings between day and night and adverse weather conditions.

[0126] In some embodiments, the battery packaging component includes an EVA film, which is disposed between the photovoltaic glass and the solar cell and is used to bond the photovoltaic glass and the solar cell.

[0127] In some embodiments, the battery packaging component includes a photovoltaic backsheet, which also serves to protect the solar cells.

[0128] Optionally, the material of the photovoltaic backsheet can be a polyvinyl fluoride composite film or a thermoplastic elastic material. The material of the photovoltaic backsheet has the properties of insulation, waterproofness, and aging resistance.

[0129] In some embodiments, the battery packaging component includes a solar aluminum frame, which is made of aluminum alloy and has the characteristics of high strength and good corrosion resistance, and can support and protect the solar cell.

[0130] An embodiment of the present application further provides a photovoltaic device, comprising the photovoltaic assembly provided in the above embodiment.

[0131] In some embodiments, the photovoltaic device may also be a lighting device, an energy storage device, etc., and the embodiments of the present application include but are not limited to the above. For example, the photovoltaic device may be a solar water heater, a solar street light, a solar photovoltaic generator, etc.

[0132] [Example]

[0133] The following examples are provided for illustrative purposes only and are intended to explain the present invention and are not to be construed as limiting the present invention. Where specific techniques or conditions are not specified in the examples, the techniques or conditions described in the literature in the art or in the product specifications shall prevail.

[0134] 1. Preparation of solar cells

[0135] [Example 1]

[0136] Example 1 corresponds to Figure 1 The structure of the solar cell shown.

[0137] First electrode layer: The first electrode layer is provided on a glass substrate. The material of the first electrode layer is indium tin oxide (ITO). The glass substrate having the first electrode layer is cleaned in sequence with acetone, alcohol, and deionized water, and dried for later use.

[0138] First carrier transport layer (hole transport layer): [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphoric acid (MeO-4PACz) was added to an ethanol solvent and stirred. The ethanol solution of MeO-4PACz was spin-coated onto the first electrode layer (spin coating speed of 4000 rpm, spin coating time of 30 s), and then transferred to a hot stage and annealed at 100°C for 10 min to form the first carrier transport layer.

[0139] First light-absorbing layer: 3 mg of FAI, 59 mg of FABr, 46 mg of CsI, 25 mg of CsBr, 428 mg of PbI2, and 209 mg of PbBr2 were added to 1 mL of a mixed solvent of DMF and DMSO (the volume ratio of DMF to DMSO was 3:1), stirred at 600 rpm on a magnetic stirrer for 8 h, and filtered to obtain a perovskite precursor solution. 100 μL of the above-mentioned perovskite precursor solution was spin-coated onto the above-mentioned first carrier transport layer (first at a spin-coating speed of 2000 rpm and an acceleration of 200 rpm / s for 10 s, then at a spin-coating speed of 4000 rpm and an acceleration of 1000 rpm / s for 25 s), and then 200 μL of chlorobenzene was added dropwise to the spin-coated perovskite precursor solution, followed by spin-coating the above-mentioned perovskite precursor solution (spin-coating speed of 4000 rpm, spin-coating time of 15 s), and then transferred to a hot stage for annealing at 100°C for 15 min to form a first light-absorbing layer.

[0140] Second carrier transport layer (electron transport layer): A 20 nm layer of SnO2 was prepared on the first light absorption layer using an atomic layer deposition (ALD) device to form a second carrier transport layer.

[0141] Composite structure: A 1nm layer of 80% ethoxylated polyimide (PEIE) was spin-coated on the above-mentioned second carrier transport layer, and ITO was prepared on the above-mentioned PEIE using an ALD device to form multiple conductive layers with a thickness d1 of 1nm. Then, Al2O3 with a thickness of 1nm was deposited on the exposed PEIE using an ALD device to form an insulating layer with a thickness d2 of 1nm to obtain a composite structure.

[0142] Third carrier transport layer (hole transport layer): Poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid) (PEDOT:PSS) was spin-coated on the above composite layer (spin coating speed was 4000 rpm, spin coating time was 30 s), and then transferred to a hot stage and annealed at 150°C for 10 min to form the third carrier transport layer.

[0143] Second light absorbing layer: 2 mg of CH(NH2)2I, 85 mg of CH3NH2I, 4 mg of PbI2, 335 mg of SnI2, and 0.5 mg of MeO-4PACz were added to 1 mL of a mixed solvent of DMF and DMSO (the volume ratio of DMF to DMSO was 3:1), stirred at 600 rpm on a magnetic stirrer for 2 h, and filtered to obtain a perovskite precursor solution; 100 μL of the above perovskite precursor solution was spin-coated onto the above second light absorbing layer. The three-carrier transport layer was first spin-coated at a speed of 1000 rpm and an acceleration of 200 rpm / s for 10 seconds, and then at a speed of 3000 and an acceleration of 1000 rpm / s for 20 seconds. Then, 350 μL of ethyl acetate was added to the spin-coated perovskite precursor solution, and then the above perovskite precursor solution was spin-coated again (the spin-coating speed was 4000 rpm and the spin-coating time was 20 seconds). It was then transferred to a hot stage and annealed at 100°C for 10 minutes to form a second light-absorbing layer.

[0144] Fourth carrier transport layer (electron transport layer): A layer of 10 μm bathocuproin (BCP) is evaporated on the second light absorbing layer to form the fourth carrier transport layer.

[0145] Second electrode layer: A 100 nm thick layer of copper (Cu) was evaporated on the fourth carrier transport layer to form a second electrode layer, thereby finally obtaining the solar cell of Example 1.

[0146] [Examples 2-5, 10]

[0147] The preparation of Examples 2-5 and 10 is similar to that of Example 1, except that the thickness d1 of the conductive layer in Examples 2-5 and 10 is 0.1 nm, 0.5 nm, 1.2 nm, 10 nm, and 12 nm, respectively. See Table 1 for details.

[0148] [Examples 6-9, 11]

[0149] The preparation of Examples 6-9 and 11 is similar to that of Example 1, except that the thickness d2 of the insulating layer in Examples 6-9 and 11 is 0.1 nm, 0.5 nm, 1.2 nm, 10 nm, and 12 nm, respectively. See Table 1 for details.

[0150] [Example 12]

[0151] The preparation of Example 12 is similar to that of Example 1, except that in the preparation of the composite structure in Example 12, a 1 nm layer of 80% ethoxylated polyimide (PEIE) was spin-coated on the second carrier transport layer, and ITO was deposited on the PEIE using an ALD device to form multiple conductive layers with a thickness d1 of 1.2 nm. Al2O3 was then deposited on the PEIE using an ALD device to a thickness of 3 nm, and the conductive layer was covered with Al2O3.

[0152] The deposited Al2O3 was cleaned with HF, and the overall thickness of Al2O3 was reduced to 2 nm, exposing the conductive layer covered by Al2O3, and forming an insulating layer with a thickness d2 of 1 nm in the area not covered by ITO to obtain a composite structure.

[0153] [Example 13]

[0154] The preparation of Example 13 is similar to that of Example 1, except that the preparation of the first carrier transport layer and the second carrier transport layer in Example 13 is as follows: in Example 13, the first carrier transport layer is an electron transport layer, and a 20 nm layer of SnO2 is prepared on the first electrode layer using an ALD device to form a first carrier transport layer; the second carrier transport layer is a hole transport layer, and MeO-4PACz is added to an ethanol solvent and stirred, and the ethanol solution of MeO-4PACz is spin-coated onto the first light absorbing layer (spin coating speed is 4000 rpm, spin coating time is 30 s), and then transferred to a hot stage and annealed at 100°C for 10 min to form a second carrier transport layer.

[0155] [Example 14]

[0156] The preparation of Example 14 is similar to that of Example 1, except that in Example 14, the solar cell further includes a first hole blocking layer and a second hole blocking layer. Specifically, a first hole blocking layer is disposed between the first light absorbing layer and the second carrier transport layer. A 25 nm layer of C60 is evaporated on the first light absorbing layer to form the first hole blocking layer. Then, a second carrier transport layer is prepared on the first hole blocking layer (for the preparation process of the second carrier transport layer, see Example 1). A second hole blocking layer is disposed between the second light absorbing layer and the fourth carrier transport layer. A 25 nm layer of C60 is evaporated on the second light absorbing layer to form the second hole blocking layer. Then, a second electrode layer is prepared on the second hole blocking layer (for the preparation process of the second electrode layer, see Example 1).

[0157] [Example 15]

[0158] The preparation of Example 15 is similar to that of Example 1, except that in Example 15, the material of the conductive layer is tungsten-doped indium oxide (IWO), as shown in Table 1 for details.

[0159] [Example 16]

[0160] The preparation of Example 16 is similar to that of Example 1, except that in Example 16, the material of the second light-absorbing layer is single-crystalline silicon. Preparation of the second light-absorbing layer: Use a strong base to clean and texture the single-crystalline silicon to obtain a double-sided textured surface; then use plasma-enhanced chemical vapor deposition (PECVD) equipment to prepare a 5nm layer of intrinsic i-type amorphous silicon and a 100nm layer of doped p-type amorphous silicon on one side of the double-sided textured single-crystalline silicon wafer, and then use the PECVD equipment to prepare a 5nm layer of intrinsic i-type amorphous silicon and a 100nm layer of doped N-type amorphous silicon on the other side; Use physical vapor deposition (PVD) equipment to prepare a 100nm layer of ITO on both sides of the sample of the prepared amorphous silicon to obtain the second light-absorbing layer.

[0161] [Comparative Example 1]

[0162] The preparation of Comparative Example 1 is similar to that of Example 1, except that the composite structure in Comparative Example 1 only includes a 1 nm ITO conductive layer.

[0163] Next, the testing process of solar cell performance is described.

[0164] 2. Performance test of solar cells

[0165] Under standard simulated sunlight (AM 1.5G, 100mW / cm 2 ) irradiation, the battery performance is tested and the IV curve is obtained. According to the IV curve and the data fed back by the test equipment, the short-circuit current Jsc (unit: mA / cm 2 ), open-circuit voltage Voc (V), maximum optical output current Jmpp (mA), and maximum optical output voltage Vmpp (V). The cell's fill factor (FF) (in %) is calculated using the formula FF = Jsc × Voc / (Jmpp × Vmpp). The cell's photoelectric conversion efficiency (PCE) (in %) is calculated using the formula PCE = Jsc × Voc × FF / Pin. Pin represents the incident light input power (in mW).

[0166] The battery performance of Examples 1-16 and Comparative Example 1 prepared in accordance with the above method was tested, and the test results are shown in Table 1. In Table 1, d1 represents the thickness of the conductive layer, and d2 represents the thickness of the insulating layer.

[0167] Table 1: Product parameters and performance test results of Examples 1-16 and Comparative Example 1

[0168]

[0169] From the comparison of the results of Comparative Example 1 and Examples 1-11, it can be seen that the composite structure between the first light absorbing layer and the second light absorbing layer in the solar cell includes multiple conductive layers and an insulating layer arranged between the multiple conductive layers, and the efficiency of the solar cell is improved.

[0170] From the comparison of the results of Examples 1-5 and Example 10, it can be seen that when the thickness of the conductive layer is set within an appropriate range, the efficiency improvement effect of the solar cell is more obvious. Under the same other conditions, when the thickness of the conductive layer is set within the range of 0.5nm to 1.2nm, the efficiency improvement effect of the solar cell is more obvious.

[0171] From the comparison of the results of Examples 6-9 and Example 11, it can be seen that when the thickness of the insulating layer is set within an appropriate range, the efficiency improvement effect of the solar cell is more obvious. Under the same other conditions, when the thickness of the insulating layer is set within the range of 0.5nm to 1.2nm, the efficiency improvement effect of the solar cell is more obvious.

[0172] From the comparison of the results of Example 1 and Example 14, it can be seen that providing a hole blocking layer between the light absorbing layer and the electron transport layer is beneficial to improving the efficiency of the solar cell.

[0173] Comparing the results of Examples 1-4, 6-8 with those of Examples 5, 9-11, it can be seen that when the difference between the thickness of the insulating layer and the thickness of the conductive layer is set within an appropriate range, the efficiency of the solar cell is more significantly improved. Specifically, under the same conditions, when the thickness of the conductive layer d1 and the thickness of the insulating layer d2 satisfy 0≤|d1-d2|≤0.9nm, the efficiency of the solar cell is more significantly improved.

[0174] It should be noted that the present application is not limited to the above-mentioned embodiments. The above-mentioned embodiments are merely examples, and any embodiments having substantially the same structure and effect as the technical concept within the scope of the present application are all included in the technical scope of the present application. In addition, without departing from the scope of the present application, any other embodiments that can be conceived by those skilled in the art and that combine some of the constituent elements in the embodiments are also included in the scope of the present application.

Claims

1. A solar cell, characterized in that: include: A first electrode layer, a first carrier transport layer, a first light absorption layer, a second carrier transport layer, a composite structure, a third carrier transport layer, a second light absorption layer, a fourth carrier transport layer, and a second electrode layer are arranged in sequence along a first direction, wherein the first direction is the incident direction of sunlight; The composite structure includes a plurality of conductive layers and an insulating layer, wherein the plurality of conductive layers are discontinuously arranged in a second direction, and the insulating layer is arranged between the plurality of conductive layers, and the second direction is perpendicular to the first direction; The band gap Eg1 of the material of the first light absorption layer satisfies: 1.6 eV≤Eg1≤2.3 eV, and the band gap Eg2 of the material of the second light absorption layer satisfies: 1 eV≤Eg2≤1.4 eV.

2. The solar cell according to claim 1, wherein The insulating layer is disposed between the plurality of conductive layers to separate the second carrier transport layer and the third carrier transport layer in the first direction.

3. The solar cell according to claim 1 or 2, characterized in that In a third direction, the plurality of conductive layers are discontinuously arranged, and the third direction is perpendicular to the first direction and the second direction.

4. The solar cell according to any one of claims 1 to 3, characterized in that The conductive material of the conductive layer includes at least one of an organic conductive material and an inorganic conductive material.

5. The solar cell according to claim 4, wherein The conductive material includes at least one of transparent conductive oxides, metals and alloys thereof, and carbon single-element materials.

6. The solar cell according to claim 5, characterized in that The transparent conductive oxide includes at least one of indium tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, aluminum-doped zinc oxide, and boron-doped zinc oxide; The metal includes at least one of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, and tungsten; The carbon elemental material includes at least one of graphite, graphene, and carbon nanotubes.

7. The solar cell according to any one of claims 4 to 6, characterized in that The insulating material of the insulating layer includes at least one of metal oxide, metal fluoride, metal nitride and organic insulating material.

8. The solar cell according to claim 7, characterized in that The insulating material includes aluminum oxide.

9. The solar cell according to claim 7, wherein: The conductive material includes one or both of indium tin oxide and tungsten-doped indium oxide, and the insulating material includes aluminum oxide.

10. The solar cell according to any one of claims 1 to 9, characterized in that The thickness d1 of the conductive layer and the thickness d2 of the insulating layer satisfy the following: 0≤|d1-d2|≤0.9nm.

11. The solar cell according to any one of claims 1 to 10, characterized in that The thickness d1 of the conductive layer ranges from 0.1 nm to 10 nm.

12. The solar cell according to claim 11, characterized in that The thickness d1 of the conductive layer ranges from 0.5 nm to 1.2 nm.

13. The solar cell according to any one of claims 1 to 12, characterized in that The thickness d2 of the insulating layer ranges from 0.1 nm to 10 nm.

14. The solar cell according to claim 13, characterized in that The thickness d2 of the insulating layer ranges from 0.5 nm to 1.2 nm.

15. The solar cell according to any one of claims 1 to 14, characterized in that The materials of the first electrode layer and the second electrode layer include at least one of conductive oxides, metals and alloys thereof, and carbon single-element materials.

16. The solar cell according to claim 15, characterized in that The conductive oxide includes at least one of indium tin oxide, lanthanide metal-doped indium oxide, boron-doped zinc oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, aluminum-doped zinc oxide, and gallium zinc oxide; The metal includes at least one of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, and tungsten; The carbon elemental material includes at least one of graphite, graphene, and carbon nanotubes.

17. The solar cell according to any one of claims 1 to 16, characterized in that The first carrier transport layer, the second carrier transport layer, the third carrier transport layer and the fourth carrier transport layer are hole transport layers or electron transport layers; The material of the hole transport layer includes a P-type semiconductor, and the material of the electron transport layer includes an N-type semiconductor.

18. The solar cell according to claim 17, characterized in that The material of the hole transport layer includes at least one of the following materials and their derivatives: [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphoric acid, [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphoric acid, [4-(3,6-dibromo-9H-carbazole-9-yl)butyl]phosphoric acid, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly-3-hexylthiophene, triphenylamine with triptycene as the core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-phenylamino)carbazole-spirobifluorene, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid, polythiophene, nickel oxide, molybdenum oxide, cuprous iodide, and cuprous oxide; The material of the electron transport layer includes at least one of the following materials and their derivatives: bathocuproin, [6,6]-phenyl-C61-butyric acid isomethyl ester, [6,6]-phenyl C71-butyric acid methyl ester, C60, C70, SnO x , zinc oxide, where the value of x ranges from 1.5 to 2.

19. The solar cell according to any one of claims 1 to 18, characterized in that The first carrier transport layer is a hole transport layer, the second carrier transport layer is an electron transport layer, the third carrier transport layer is a hole transport layer, and the fourth carrier transport layer is an electron transport layer.

20. The solar cell according to any one of claims 1 to 19, characterized in that The material of the first light absorption layer is perovskite, and the material of the second light absorption layer is perovskite.

21. The solar cell according to claim 20, characterized in that The chemical formula of the perovskite in the first light absorbing layer and the second light absorbing layer is ABX3, wherein, A includes CH3(NH2)2 + 、CH(NH2)2 + 、CH3NH2 + 、Li + 、Na + , K + , Rb + 、Cs + At least one of, B includes Pb + 、Be 2+ Mg 2+ , Ca 2+ 、Sr 2+ 、Ba 2+ 、Zn 2+ 、Ge 2+ 、Fe 2+ 、Co 2+ 、Ni 2+ At least one of, X includes Cl - Br - , I - 、SCN - 、CNO - 、OCN - 、OSCN - SH - OH - 、CP - 、CN - 、SeCN - 、N3 - 、NO2 - At least one of .

22. The solar cell according to claim 19, wherein The solar cell further includes a first hole blocking layer, which is located between the first light absorbing layer and the second carrier transporting layer.

23. The solar cell according to claim 22, characterized in that The solar cell further includes a second hole blocking layer, and the second hole blocking layer is located between the second light absorbing layer and the fourth carrier transporting layer.

24. The solar cell according to claim 23, characterized in that The materials of the first hole blocking layer and the second hole blocking layer include fullerene and its derivatives, SnO x At least one of the following, wherein the value range of x is 1.5 to 2.

25. A method for preparing a solar cell, characterized in that: include: Providing a first electrode layer, a first carrier transport layer, a first light absorption layer, a second carrier transport layer, a composite structure, a third carrier transport layer, a second light absorption layer, a fourth carrier transport layer and a second electrode layer arranged in sequence along a first direction, wherein the first direction is the incident direction of sunlight; The composite structure includes a plurality of conductive layers and an insulating layer, wherein the plurality of conductive layers are discontinuously arranged in a second direction, and the insulating layer is arranged between the plurality of conductive layers, and the second direction is perpendicular to the first direction; The band gap Eg1 of the material of the first light absorption layer satisfies: 1.6 eV≤Eg1≤2.3 eV, and the band gap Eg2 of the material of the second light absorption layer satisfies: 1 eV≤Eg2≤1.4 eV.

26. The preparation method according to claim 25, characterized in that The method provides a first electrode layer, a first carrier transport layer, a first light absorption layer, a second carrier transport layer, a composite structure, a third carrier transport layer, a second light absorption layer, a fourth carrier transport layer and a second electrode layer arranged in sequence along a first direction, comprising: providing the first electrode layer; preparing the first carrier transport layer on the first electrode layer, wherein the first carrier transport layer is a hole transport layer; preparing the first light absorbing layer on the first carrier transport layer; preparing the second carrier transport layer on the first light absorbing layer, wherein the second carrier transport layer is an electron transport layer; preparing the plurality of conductive layers and the insulating layer on the second carrier transport layer to obtain the composite structure; preparing the third carrier transport layer on the composite structure, wherein the third carrier transport layer is a hole transport layer; preparing the second light absorbing layer on the third carrier transport layer; preparing the fourth carrier transport layer on the second light absorbing layer, wherein the fourth carrier transport layer is an electron transport layer; The second electrode layer is formed on the fourth carrier transport layer.

27. The preparation method according to claim 26, characterized in that The step of preparing the plurality of conductive layers and the insulating layer on the second carrier transport layer to obtain the composite structure comprises: depositing a conductive material on the second carrier transport layer to form the plurality of conductive layers; An insulating material is deposited on the second carrier transport layer to obtain the insulating layer, thereby obtaining the composite structure.

28. The preparation method according to claim 26, characterized in that The step of preparing the plurality of conductive layers and the insulating layer on the second carrier transport layer comprises: depositing a conductive material on the second carrier transport layer to form the plurality of conductive layers; depositing an insulating material on the second carrier transport layer and the plurality of conductive layers to obtain a composite structure to be processed; The composite structure to be processed is cleaned by using hydrofluoric acid to obtain the composite structure.

29. The preparation method according to any one of claims 25 to 28, characterized in that In a third direction, the plurality of conductive layers are discontinuously arranged, and the third direction is perpendicular to the first direction and the second direction.

30. The preparation method according to any one of claims 25 to 29, characterized in that The thickness d1 of the conductive layer and the thickness d2 of the insulating layer satisfy the following: 0≤|d1-d2|≤0.9nm.

31. The preparation method according to any one of claims 25 to 30, characterized in that The thickness d1 of the conductive layer ranges from 0.1 nm to 10 nm.

32. The preparation method according to claim 31, characterized in that The thickness d1 of the conductive layer ranges from 0.5 nm to 1.2 nm.

33. The preparation method according to any one of claims 25 to 32, characterized in that The thickness d2 of the insulating layer ranges from 0.1 nm to 10 nm.

34. The preparation method according to claim 33, characterized in that The thickness d2 of the insulating layer ranges from 0.5 nm to 1.2 nm.

35. A photovoltaic module, characterized in that: Comprising the solar cell according to any one of claims 1 to 24.

36. A photovoltaic device, characterized in that: Comprising the photovoltaic module according to claim 35.

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