Ionization-assisted semiconductor gas sensor and working method thereof

Abstract

The invention provides an ionization-assisted semiconductor gas sensor and a working method thereof, a one-dimensional nanostructure array comprises a plurality of vertical nanowires, the one-dimensional nanostructure array is located in a first preset area of the upper surface of a substrate, and an insulating layer is located in a second preset area outside the first preset area in the upper surface of the substrate. The semiconductor counter electrode structure comprises a semiconductor film layer and a group of electrode pairs, the semiconductor film layer is located on the one-dimensional nanostructure array and the insulating layer, two electrodes of the group of electrode pairs are both located in the semiconductor film layer, and two output ends of the circuit module are coupled with the substrate and the semiconductor counter electrode structure respectively and used for outputting working driving voltage. And two detection ends of the circuit module are respectively coupled to two electrodes of one group of electrode pairs and are used for detecting the current flowing through the semiconductor film layer, so that the sensor disclosed by the invention can be used for detecting in a non-heating state and has relatively high detection precision.

Description

Technical Field

[0001] The present invention relates to the technical field of gas sensors, and in particular to an ionization-assisted semiconductor gas sensor and a working method thereof. Background Art

[0002] A gas sensor is a device used to detect the type and concentration of specific gases in the environment. Gas sensors are widely used in environmental monitoring, industrial safety, smart homes, medical health and other fields.

[0003] Traditional ionization gas sensors require gas discharge during operation. During the gas discharge process, some active gas molecules and ions are generated. However, traditional ionization sensors ignore these active gas molecules and ions during gas detection, resulting in low detection accuracy of traditional ionization gas sensor devices.

[0004] Traditional semiconductor gas sensors typically require heating to ensure efficient reactions between gas molecules and the semiconductor surface. However, this heating requirement significantly increases the sensor's power consumption and, in temperature-sensitive environments, can adversely affect the surrounding environment or the device. Summary of the Invention

[0005] The technical problem solved by the present invention is to provide an ionization-assisted semiconductor gas sensor and a working method thereof. The gas sensor of the present invention can detect gas without heating and has high detection accuracy.

[0006] According to a first aspect of the present invention, the technical solution of the present invention provides an ionization-assisted semiconductor gas sensor, comprising: A substrate having an upper surface and a lower surface opposite to each other, wherein the upper surface includes a first predetermined area and a second predetermined area that do not overlap with each other; a one-dimensional nanostructure array located in the first predetermined area, the one-dimensional nanostructure array comprising a plurality of vertical nanowires that are separated from each other and arranged in an array, wherein the bottoms of the vertical nanowires contact the upper surface; an insulating layer, located in the second preset area, and having a height greater than a height of the one-dimensional nanostructure array in a direction perpendicular to the upper surface; a semiconductor counter-electrode structure comprising a semiconductor film layer and a set of electrode pairs, wherein the semiconductor film layer is located on the one-dimensional nanostructure array and the insulating layer, the semiconductor film layer is supported by the insulating layer and forms a space between the semiconductor film layer and the substrate to accommodate the one-dimensional nanostructure array, and the set of electrode pairs is located within the semiconductor film layer, and the two electrodes of the set of electrode pairs do not overlap; an insulating substrate, located on the semiconductor film layer and the set of electrode pairs, and in contact with the semiconductor film layer; A circuit module, wherein the two detection ends of the circuit module are respectively coupled to the two electrodes of the group of electrode pairs, and the two output ends of the circuit module are respectively coupled to the substrate and the semiconductor electrode pair structure. The circuit module is used to output a working driving voltage to the substrate and the semiconductor electrode pair structure, and to detect the current flowing through the semiconductor film layer.

[0007] Optionally, the circuit module includes a driving circuit and a detection module; Two output terminals of the driving circuit are respectively coupled to the substrate and the semiconductor counter electrode structure; The driving circuit includes an ammeter and a driving power supply connected in series; The ammeter is used to determine the working driving voltage; The driving power supply is used to output a working driving voltage to the substrate and the semiconductor counter electrode structure; The two detection ends of the detection module are respectively coupled to the two electrodes of the set of electrode pairs; The detection module is used to monitor the current flowing through the semiconductor film layer in real time.

[0008] Optionally, the set of electrode pairs is an interdigitated structure.

[0009] Optionally, in a direction perpendicular to the upper surface, the specified spacing is greater than 0 micrometers and less than or equal to 50 micrometers, and the specified spacing is the spacing between the top of the one-dimensional nanostructure array and the surface of the semiconductor film layer facing the upper surface.

[0010] Optionally, the material of the semiconductor film layer is a metal oxide semiconductor film layer.

[0011] Optionally, the insulating layer surrounds the one-dimensional nanostructure array.

[0012] According to a second aspect of the present invention, the technical solution of the present invention provides an operating method of an ionization-assisted semiconductor gas sensor, which is applied to any of the aforementioned ionization-assisted semiconductor gas sensors, and the operating method includes: placing the ionization-assisted semiconductor gas sensor in a working gas environment; After placing the ionization-assisted semiconductor gas sensor in a working gas environment, applying a working driving voltage to the substrate and the semiconductor counter electrode structure, wherein the working driving voltage is determined according to a reference gas breakdown voltage corresponding to a reference gas environment; A current flowing through the semiconductor film layer is obtained.

[0013] Optionally, the method for determining the working driving voltage further includes: Provide a reference gas environment; placing the ionization-assisted semiconductor gas sensor in the reference gas environment; After placing the ionization-assisted semiconductor gas sensor in the reference gas environment, outputting a driving voltage to the substrate and the semiconductor counter electrode structure until a corresponding reference gas breakdown voltage is obtained; The operating driving voltage is set according to the reference gas breakdown voltage corresponding to the reference gas environment.

[0014] Optionally, the operating driving voltage is 60% to 90% of the reference gas breakdown voltage.

[0015] Compared with the prior art, the technical solution of the embodiment of the present invention has the following beneficial effects: In the ionization-assisted semiconductor gas sensor and its use method of the technical solution of the present invention, since the one-dimensional nanostructure array is located in the first preset area on the upper surface of the substrate, the one-dimensional nanostructure array includes a plurality of vertical nanowires that are discrete and arranged in an array, and the bottom of the vertical nanowires contacts the upper surface. The insulating layer is located in the second preset area on the upper surface of the substrate. The second preset position and the first preset position do not overlap with each other. In the direction perpendicular to the upper surface, the insulating layer is higher than the one-dimensional nanostructure array. The semiconductor electrode structure includes a semiconductor film layer and a group of electrode pairs. The semiconductor film layer is located on the one-dimensional nanostructure array and on the insulating layer. A group of electrode pairs is located in the semiconductor film layer. The two output ends of the circuit module are respectively coupled to the substrate and the semiconductor electrode structure, and the circuit module is used to output to the substrate and the semiconductor electrode structure. A working driving voltage is generated, therefore, an electric field is generated between the semiconductor film layer and the one-dimensional nanostructure array. Due to the electric field between the one-dimensional nanostructure array and the semiconductor electrode structure, the gas near the one-dimensional nanostructure array can be ionized. On the one hand, the two detection ends of the circuit module are coupled to two electrodes of a group of electrode pairs, and the circuit module is used to detect the current flowing through the semiconductor film layer. On the other hand, the active gas molecules and ions generated after the gas is ionized can react with the semiconductor film layer without heating, thereby changing the current flowing through the semiconductor film layer. Therefore, the gas sensor of the present invention can detect gas without heating, and the gas sensor of the present invention does not ignore these active gas molecules and ions in the detection of gas, so the gas sensor of the present invention has high detection accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0017] Figure 1 This is a schematic structural diagram of a first ionization-assisted semiconductor gas sensor according to an embodiment of the present invention; Figure 2 1 is a top view of a one-dimensional nanostructure array and a substrate in a second ionization-assisted semiconductor gas sensor according to an embodiment of the present invention; Figure 3 This is a schematic structural diagram of a third ionization-assisted semiconductor gas sensor according to an embodiment of the present invention; Figure 4 Schematic diagram of the structure of a semiconductor counter electrode according to an embodiment of the present invention. DETAILED DESCRIPTION

[0018] As mentioned in the background art, how to enable a gas sensor to detect gas without heating and with high detection accuracy has become a technical challenge that needs to be solved in the industry. This will be explained in detail below.

[0019] Traditional ionization gas sensors are gas sensing structures based on the physical effects of gas electronics. Their operating principle primarily exploits the unique discharge onset voltages of different gases under specific temperature, pressure, and humidity conditions. In traditional ionization gas sensors, during the gas discharge process, the current in the sensor's driver circuit increases dramatically. Under the externally applied drive voltage, the gas between the two electrodes of a pair exhibits a "self-sustained discharge," meaning the current remains high. Traditional ionization gas sensors use this discharge current as a basis for determining gas composition. However, during operation, the ionization of gas in traditional ionization gas sensors also produces reactive gas molecules and ions. If the sensor relies solely on the discharge current as a basis for determining gas composition, these reactive gas molecules and ions will not be detected, resulting in inaccurate detection results.

[0020] Traditional semiconductor sensors detect gas through adsorption and chemical reactions between the semiconductor in the gas sensor and the gas, changing the semiconductor's resistance and generating a sensing signal related to the gas composition. However, traditional semiconductor gas sensors have many drawbacks, such as the need for heating during operation to promote the reaction between the gas and the semiconductor. This heating requirement not only significantly increases the sensor's power consumption, but also, in some temperature-sensitive environments, the high temperature may adversely affect the surrounding environment or equipment.

[0021] In view of this, the present invention proposes an ionization-assisted semiconductor gas sensor, in which a one-dimensional nanostructure array is located in a first preset area on the upper surface of a substrate, the one-dimensional nanostructure array includes a plurality of vertical nanowires that are discrete and arranged in an array, the bottoms of the vertical nanowires contact the upper surface, the insulating layer is located in a second preset area on the upper surface of the substrate, the second preset position and the first preset position do not overlap with each other, and in a direction perpendicular to the upper surface, the insulating layer is higher than the one-dimensional nanostructure array, the semiconductor counter electrode structure includes a semiconductor film layer and a group of electrode pairs, the semiconductor film layer is located on the one-dimensional nanostructure array and on the insulating layer, the group of electrode pairs is located in the semiconductor film layer, the two output ends of the circuit module are respectively coupled to the substrate and the semiconductor counter electrode structure, and the circuit module is used to output to the substrate and the semiconductor counter electrode structure. Working driving voltage, therefore, an electric field is generated between the semiconductor film layer and the one-dimensional nanostructure array. Due to the electric field between the one-dimensional nanostructure array and the semiconductor electrode structure, the gas near the one-dimensional nanostructure array can be ionized. On the one hand, the active gas molecules and ions generated after the gas is ionized can react with the semiconductor film layer without heating, thereby changing the current flowing through the semiconductor film layer. On the other hand, the two detection ends of the circuit module are coupled to the two electrodes of a group of electrode pairs, and the circuit module is used to detect the current flowing through the semiconductor film layer. Therefore, the gas sensor of the present invention can detect gas without heating, and the gas sensor of the present invention does not ignore these active gas molecules and ions in the detection of gas, so the gas sensor of the present invention has high detection accuracy.

[0022] The following will provide a clear and complete description of the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0023] The terms "first," "second," "third," "fourth," and so on (if any) in the description and claims of the present invention and in the accompanying drawings are used to distinguish similar objects and are not necessarily used to describe a particular order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of the present invention described herein can be implemented in orders other than those illustrated or described herein. In addition, the terms "including" and "having," as well as any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus that includes a series of steps or elements is not necessarily limited to those steps or elements explicitly listed, but may include other steps or elements not explicitly listed or inherent to such processes, methods, products, or apparatuses.

[0024] The technical solution of the present invention is described in detail below with reference to specific embodiments. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments.

[0025] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0026] Please refer to Figure 1 , an embodiment of the present invention provides an ionization-assisted semiconductor gas sensor, comprising: The substrate 100 has an upper surface 101 and a lower surface 102 opposite to each other, wherein the upper surface 101 includes a first predetermined area and a second predetermined area that do not overlap with each other; The one-dimensional nanostructure array 200 is located in the first predetermined area. The one-dimensional nanostructure array 200 includes a plurality of vertical nanowires 210 that are separated from each other and arranged in an array. The bottom of the vertical nanowires 210 contacts the upper surface 101 of the substrate 100 (e.g., Figure 2 shown); an insulating layer 300 located in the second predetermined area, and having a height greater than a height of the one-dimensional nanostructure array 200 in a direction perpendicular to the upper surface 101; A semiconductor counter electrode structure 400 includes a semiconductor film layer 420 and a set of electrode pairs 410. The semiconductor film layer 420 is located on the one-dimensional nanostructure array 200 and the insulating layer 300. The semiconductor film layer 420 is supported by the insulating layer 300 and forms a space with the substrate 100 to accommodate the one-dimensional nanostructure array 200. The set of electrode pairs 410 is located within the semiconductor film layer 420, and the two electrodes of the set of electrode pairs do not overlap. an insulating substrate 500 , located on the semiconductor film layer 420 and the set of electrode pairs 410 , and in contact with the semiconductor film layer 420 and the set of electrode pairs 410 ; The circuit module 600 has two detection ends coupled to the two electrodes of the set of electrode pairs 410, and two output ends coupled to the substrate 100 and the semiconductor electrode structure 400, respectively. The circuit module 600 is used to output a working driving voltage to the substrate 100 and the semiconductor electrode structure 400, and is used to detect the current flowing through the semiconductor film layer 420.

[0027] Specifically, the material of the semiconductor film layer 420 is a metal oxide semiconductor film layer.

[0028] For example, the material of the metal oxide semiconductor film layer 420 can be zinc oxide, tin oxide, molybdenum oxide, copper oxide, copper chromium oxide, or silver copper oxide. Of course, it should be understood that the present invention is not limited to this, and the material of the metal oxide semiconductor film layer 420 can be any metal oxide.

[0029] As a preferred embodiment, the insulating layer 300 surrounds the one-dimensional nanostructure array 200 .

[0030] The insulating layer 300 surrounds the one-dimensional nanostructure array 200 and has a better supporting effect on the semiconductor film layer 420 in the semiconductor counter electrode structure 400 .

[0031] As a preferred embodiment, in the direction perpendicular to the upper surface 101, the specified spacing is greater than 0 microns and less than or equal to 50 microns, and the specified spacing refers to the spacing between the top of the vertical nanowire 210 and the surface of the semiconductor film layer 420 facing the upper surface 101.

[0032] When the specified spacing is greater than 0 microns and less than or equal to 50 microns, the intensity of the electric field between the semiconductor counter electrode structure 400 and the one-dimensional nanostructure array 200 will more easily reach the level required to ionize the gas, and in the process of transporting the ionized gas to the semiconductor counter electrode structure 400, the ionized gas will not be easily disturbed due to the short transport distance.

[0033] In summary, in an ionization-assisted semiconductor gas sensor provided in this embodiment, an electric field is generated between the semiconductor film layer 420 and the one-dimensional nanostructure array 200. Due to the electric field between the one-dimensional nanostructure array 200 and the semiconductor counter electrode structure 400, the gas near the one-dimensional nanostructure array 200 can be ionized. Because the ionized gas can react with the semiconductor counter electrode structure 400 without heating, thereby changing the current flowing through the semiconductor film layer 420, the sensor of the present invention can detect gas without heating. Because the active gas molecules and ions generated by gas ionization can also react with the semiconductor film layer 420, thereby changing the current flowing through the semiconductor film layer 420, the gas sensor of the present invention does not ignore these active gas molecules and ions when detecting gas, so the gas sensor of the present invention has high detection accuracy.

[0034] As a specific implementation, please refer to Figure 3 , the circuit module 600 includes a driving circuit 610 and a detection module 620; The two output terminals of the driving circuit 610 are respectively coupled to the substrate 100 and the semiconductor counter electrode structure 400; The driving circuit 610 includes an ammeter 612 and a driving power supply 611 connected in series; The driving power supply 611 is used to output a working driving voltage to the substrate 100 and the semiconductor counter electrode structure 400; The ammeter 612 is used to determine the working driving voltage; The two detection terminals of the detection module 620 are respectively coupled to the two terminals of the two electrodes of the electrode pair 410; The detection module 620 is used to monitor the current flowing through the semiconductor film layer 420 in real time.

[0035] The driving power supply 611 is used to output a working driving voltage to the semiconductor counter electrode structure 400 and the substrate 100. The driving power supply 611 and the ammeter 612 can measure a reference gas breakdown voltage. The working driving voltage is set according to the reference gas breakdown voltage.

[0036] As a preferred embodiment, please refer to Figure 4 , the set of electrode pairs 410 is an interdigital structure.

[0037] Since the structure of the group of electrode pairs 410 is set as a forked structure, the group of electrode pairs 410 can cover more of the entire plane of the semiconductor electrode structure 400, and the gap between the two electrodes is narrower, so the resistance between the two electrodes is smaller, and the rate of change of the resistance between the two electrodes will be more significant.

[0038] Of course, it should be understood that the present invention is not limited thereto. As an example, the set of electrode pairs described above may also be a structure in which two electrode surfaces are parallel and opposite to each other.

[0039] Correspondingly, an embodiment of the present invention further provides a working method of an ionization-assisted semiconductor gas sensor, which can be applied to the above-mentioned ionization-assisted semiconductor gas sensor.

[0040] Please continue to refer to Figure 3 , the working method includes: The ionization-assisted semiconductor gas sensor is placed in a working gas environment.

[0041] After the ionization-assisted semiconductor gas sensor is placed in a working gas environment, a working driving voltage is applied to the substrate 100 and the semiconductor counter electrode structure 400 . The working driving voltage is determined according to a reference gas breakdown voltage corresponding to a reference gas environment.

[0042] The current flowing through the semiconductor film layer 420 is obtained.

[0043] The detection module 620 is used to obtain the current flowing through the semiconductor film layer 420 .

[0044] As an example, the method for determining the working driving voltage further includes: Provides a reference gas environment.

[0045] The ionization-assisted semiconductor gas sensor is placed in the reference gas environment.

[0046] After the ionization-assisted semiconductor gas sensor is placed in the reference gas environment, a driving voltage is output to the substrate 100 and the semiconductor counter electrode structure 400 until a corresponding reference gas breakdown voltage is obtained.

[0047] After placing the ionization-assisted semiconductor gas sensor in the reference gas environment, the method of outputting a driving voltage to the substrate 100 and the semiconductor counter electrode structure 400 until a corresponding reference gas breakdown voltage is obtained includes: The driving power supply 611 applies a driving voltage to the substrate 100 and the semiconductor counter electrode, and gradually increases the driving voltage. The ammeter 612 monitors the current in the driving circuit 610 and obtains the driving voltage when the current jumps as the reference gas breakdown voltage.

[0048] As an example, the driving voltage starts from 0 and gradually increases.

[0049] The operating driving voltage is set according to the reference gas breakdown voltage corresponding to the reference gas environment.

[0050] As an example, the operating driving voltage is 60% to 90% of the reference gas breakdown voltage.

[0051] When the operating driving voltage is set to 60% to 90% of the reference gas breakdown voltage, at this driving voltage, the gas is easily ionized to produce reactive gas molecules and ions. The ionized reactive gas molecules and ions react efficiently with the semiconductor film layer 420, resulting in the ionization-assisted semiconductor gas sensor of this embodiment requiring no heating and exhibiting high detection accuracy. Furthermore, at this driving voltage, the gas discharge process does not generate a significant current, and the two electrodes of the electrode pair 410 are not damaged.

[0052] As a specific example, the operating driving voltage is 80% of the breakdown voltage value of the reference gas.

[0053] When the operating driving voltage is 80% of the reference gas breakdown voltage, the gas is most easily ionized.

[0054] In summary, in the ionization-assisted semiconductor gas sensor and its use method of the technical solution of the present invention, since the one-dimensional nanostructure array 200 is located in the first preset area of ​​the upper surface 101 of the substrate 100, the one-dimensional nanostructure array 200 includes a plurality of vertical nanowires 210 that are separated from each other and arranged in an array, and the bottom of the vertical nanowires 210 contacts the upper surface 101, and the insulating layer 300 is located in the second preset area of ​​the upper surface 101 of the substrate 100. The second preset position and the first preset position do not overlap with each other. In the direction perpendicular to the upper surface 101, the insulating layer 300 is higher than the one-dimensional nanostructure array 200. The semiconductor electrode structure 400 includes a semiconductor film layer 420 and a group of electrode pairs 410. The semiconductor film layer 420 is located on the one-dimensional nanostructure array 200 and on the insulating layer 300. The group of electrode pairs 410 is located in the semiconductor film layer 420, and the group of electrode pairs 410 do not overlap with each other. The two output ends of the circuit module 600 are respectively coupled to the substrate 100 and the semiconductor. The circuit module 600 outputs a working driving voltage to the substrate 100 and the semiconductor electrode structure 400. Therefore, an electric field is generated between the semiconductor film layer 420 and the one-dimensional nanostructure array 200. Due to the electric field between the one-dimensional nanostructure array 200 and the semiconductor electrode structure 400, the gas near the one-dimensional nanostructure array 200 can be ionized. On the one hand, the two detection ends of the circuit module 600 are coupled to two electrodes of a group of electrode pairs. The circuit module is used to detect the current flowing through the semiconductor film layer. On the other hand, the active gas molecules and ions generated after the gas is ionized can react with the semiconductor electrode structure 400 without heating, thereby changing the current flowing through the semiconductor film layer 420. Therefore, the gas sensor of the present invention can detect gas without heating, and the gas sensor of the present invention does not ignore these active gas molecules when detecting gas, so the gas sensor of the present invention has high detection accuracy.

[0055] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the scope defined by the claims.

Claims

1. An ionization-assisted semiconductor gas sensor, characterized in that: include: A substrate having an upper surface and a lower surface opposite to each other, wherein the upper surface includes a first predetermined area and a second predetermined area that do not overlap with each other; a one-dimensional nanostructure array located in the first predetermined area, the one-dimensional nanostructure array comprising a plurality of vertical nanowires that are separated from each other and arranged in an array, wherein the bottoms of the vertical nanowires contact the upper surface; an insulating layer, located in the second preset area, and having a height greater than a height of the one-dimensional nanostructure array in a direction perpendicular to the upper surface; a semiconductor counter-electrode structure comprising a semiconductor film layer and a set of electrode pairs, wherein the semiconductor film layer is located on the one-dimensional nanostructure array and the insulating layer, the semiconductor film layer is supported by the insulating layer and forms a space between the semiconductor film layer and the substrate to accommodate the one-dimensional nanostructure array, and the set of electrode pairs is located within the semiconductor film layer, and the two electrodes of the set of electrode pairs do not overlap; an insulating substrate, located on the semiconductor film layer and the set of electrode pairs, and in contact with the semiconductor film layer; A circuit module, wherein the two detection ends of the circuit module are respectively coupled to the two electrodes of the group of electrode pairs, and the two output ends of the circuit module are respectively coupled to the substrate and the semiconductor electrode pair structure. The circuit module is used to output a working driving voltage to the substrate and the semiconductor electrode pair structure, and to detect the current flowing through the semiconductor film layer.

2. The ionization-assisted semiconductor gas sensor according to claim 1, wherein: The circuit module includes a driving circuit and a detection module; Two output terminals of the driving circuit are respectively coupled to the substrate and the semiconductor counter electrode structure; The driving circuit includes an ammeter and a driving power supply connected in series; The ammeter is used to determine the working driving voltage; The driving power supply is used to output a working driving voltage to the substrate and the semiconductor counter electrode structure; The two detection ends of the detection module are respectively coupled to the two electrodes of the set of electrode pairs; The detection module is used to monitor the current flowing through the semiconductor film layer in real time.

3. The ionization-assisted semiconductor gas sensor according to claim 1, wherein: The set of electrode pairs is an interdigitated structure.

4. The ionization-assisted semiconductor gas sensor according to claim 1, wherein: In a direction perpendicular to the upper surface, a designated spacing is greater than 0 micrometers and less than or equal to 50 micrometers, wherein the designated spacing is a spacing between a top end of the one-dimensional nanostructure array and a surface of the semiconductor film layer facing the upper surface.

5. The ionization-assisted semiconductor gas sensor according to claim 1, wherein: The material of the semiconductor film layer is a metal oxide semiconductor film layer.

6. The ionization-assisted semiconductor gas sensor according to claim 1, wherein: The insulating layer surrounds the one-dimensional nanostructure array.

7. A method for operating an ionization-assisted semiconductor gas sensor, characterized in that: Applied to the ionization-assisted semiconductor gas sensor according to any one of claims 1 to 6, the working method comprises: placing the ionization-assisted semiconductor gas sensor in a working gas environment; After placing the ionization-assisted semiconductor gas sensor in a working gas environment, applying a working driving voltage to the substrate and the semiconductor counter electrode structure, wherein the working driving voltage is determined according to a reference gas breakdown voltage corresponding to a reference gas environment; A current flowing through the semiconductor film layer is obtained.

8. The working method according to claim 7, characterized in that: The method for determining the working driving voltage further includes: Provide a reference gas environment; placing the ionization-assisted semiconductor gas sensor in the reference gas environment; After placing the ionization-assisted semiconductor gas sensor in the reference gas environment, outputting a driving voltage to the substrate and the semiconductor counter electrode structure until a corresponding reference gas breakdown voltage is obtained; The operating driving voltage is set according to the reference gas breakdown voltage corresponding to the reference gas environment.

9. The working method according to claim 8, characterized in that: The operating driving voltage is 60% to 90% of the reference gas breakdown voltage.

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