Reduction furnace and reduction furnace machining method
By setting multiple nozzles in the reduction furnace and designing gas distribution and heat exchange, the problem of uneven growth of silicon rods was solved, uniform growth of silicon rods was achieved and production quality was improved.
Patent Information
- Application Number
- CN202510621302.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-14
- Publication Date
- 2025-09-05
AI Technical Summary
The problem of uneven growth of silicon rods in the reduction furnace causes the silicon rods to be thicker at the bottom and thinner at the top, affecting production quality.
Multiple nozzles are set up in the reduction furnace. The position and angle of the nozzles are designed to form a layered distribution of gas inside the furnace body, improving temperature uniformity through heat exchange, ensuring gas concentration uniformity, and thus improving the growth uniformity of silicon rods.
By improving gas distribution and temperature gradient, uniform growth of silicon rods is achieved, the problem of uneven growth is solved, and production quality is improved.
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Figure CN120589756A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of silicon production, and in particular to a reduction furnace and a reduction furnace processing method. Background Art
[0002] With the continuous development of photovoltaic technology, the market share of polycrystalline silicon cells for power generation is increasing due to their low cost and relatively high efficiency. While there are many limitations on improving power generation efficiency, low-cost polycrystalline silicon is also an important way to reduce the cost of photovoltaic cells.
[0003] At present, the main method of producing silicon is to chemically react trichlorosilane and hydrogen under high temperature conditions to produce silicon and hydrogen chloride. Trichlorosilane and hydrogen are then flushed into a reduction furnace where a silicon core is placed. The silicon generated by the chemical reaction adheres to the surface of the silicon core and forms a silicon rod.
[0004] In the related art, there is a problem of uneven growth of silicon rods in a reduction furnace. Summary of the Invention
[0005] The present application provides a reduction furnace for solving the problem of uneven growth of silicon rods in the reduction furnace.
[0006] In order to achieve the above objectives, this application adopts the following technical solutions:
[0007] In one aspect, the present application provides a reduction furnace, comprising:
[0008] A furnace body is formed with a receiving cavity for receiving the silicon core;
[0009] at least one first nozzle, the first nozzle being disposed on the furnace body, the first nozzle being used to contain gas, and the first nozzle being capable of spraying gas toward a first preset area;
[0010] at least one second nozzle, the second nozzle being disposed on the furnace body, the second nozzle being used to contain gas, and the second nozzle being capable of spraying gas toward a second preset area;
[0011] The first preset area and the second preset area are at least partially stacked; in the height direction of the furnace body, the lowest position of the second nozzle is higher than the highest position of the first nozzle.
[0012] Optionally, the first nozzle is arranged on the bottom plate of the furnace body;
[0013] The furnace body is formed with a first opening, the first opening is connected to the accommodating cavity, the first nozzle is formed with a first mounting portion and a first injection portion, the first mounting portion is used to connect to an external gas source, and the first injection portion passes through the first opening and is arranged toward the accommodating cavity;
[0014] The first nozzle can rotate around the first opening as a rotation center under the driving of a first external force.
[0015] Optionally, a plurality of first nozzles are provided, and two adjacent first nozzles are spaced apart in the height direction of the furnace body;
[0016] And / or, a plurality of first nozzles are provided, and in a height direction perpendicular to the furnace body, two adjacent first nozzles are spaced apart.
[0017] Optionally, the second nozzle is provided on the furnace body;
[0018] The furnace body is formed with a second opening, the second opening is communicated with the accommodating cavity, the second nozzle is formed with a second mounting portion and a second injection portion, the second mounting portion is used to connect to an external gas source, and the second injection portion passes through the second opening and is arranged toward the accommodating cavity;
[0019] The second nozzle can rotate around the second opening as a rotation center under the driving of a second external force.
[0020] Optionally, a plurality of second nozzles are provided, and two adjacent second nozzles are spaced apart in the height direction of the furnace body;
[0021] And / or, a plurality of second nozzles are provided, and in a height direction perpendicular to the furnace body, two adjacent second nozzles are spaced apart.
[0022] Optionally, the furnace body includes: a top wall, a side wall, and a bottom wall connected in sequence; the top wall is arranged on one end of the side wall, and the bottom wall is arranged on the other end of the side wall; in the height direction of the furnace body, the top wall and the bottom wall are arranged in parallel, and the top wall is located above the bottom wall;
[0023] The top wall, side walls and bottom wall together enclose a receiving cavity.
[0024] Optionally, the first nozzle is arranged on the bottom plate of the furnace body;
[0025] The second nozzle is disposed on at least one of the top wall and the side wall.
[0026] Optionally, the reduction furnace is formed with an outlet communicating with the accommodating chamber, and the outlet is arranged on the bottom wall.
[0027] Optionally, also include:
[0028] a first conveying member, one end of which is connected to the first nozzle and the other end of which is connected to an external gas source;
[0029] The second conveying member has one end connected to the second nozzle and the other end connected to an external gas source.
[0030] On the other hand, the present application provides a reduction furnace processing method, which is applied to a reduction furnace and comprises the following steps:
[0031] First molding: the first nozzle is opened, and the gas is ejected along the first nozzle and flows in the first preset area;
[0032] Second molding: Open the second nozzle, and the gas is ejected along the second nozzle and flows in the second preset area.
[0033] The reduction furnace provided herein has a second nozzle positioned at its lowest position higher than the first nozzle's highest position in the furnace's height. The trichlorosilane and hydrogen mixture ejected from the first and second nozzles respectively exchanges heat with the atmosphere within the reduction furnace, making the temperature within the furnace more uniform and controllable. The second nozzle is positioned at the top of the reduction furnace to increase the trichlorosilane gas concentration at the top of the reduction furnace, resolving the problem in existing furnaces where varying trichlorosilane concentrations throughout the reduction furnace lead to varying thicknesses and uneven growth quality of silicon rods.
[0034] Therefore, the reduction furnace provided in the embodiments of the present application can solve the problem of uneven growth of silicon rods in the reduction furnace. BRIEF DESCRIPTION OF THE DRAWINGS
[0035] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following is a brief introduction to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.
[0036] Figure 1 A schematic diagram of the main structure of a reduction furnace provided in an embodiment of the present application;
[0037] Description of reference numerals:
[0038] 1-furnace body; 11-accommodation cavity; 12-top wall; 13-side wall; 14-bottom wall;
[0039] 2-first nozzle;
[0040] 3- second nozzle;
[0041] 4-first conveying member;
[0042] 5- Second conveying member.
[0043] The above drawings illustrate specific embodiments of the present application, which will be described in more detail below. These drawings and the textual description are not intended to limit the scope of the present application in any way, but rather to illustrate the concepts of the present application to those skilled in the art by reference to specific embodiments. DETAILED DESCRIPTION
[0044] To make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.
[0045] The main method of producing silicon is to mix vaporized trichlorosilane with hydrogen in a certain proportion and then introduce it into a polysilicon reduction furnace. Voltage is applied to both ends of the rod-shaped silicon core placed in the reduction furnace to generate high temperature. On the surface of the high-temperature silicon core, trichlorosilane is reduced to elemental silicon by hydrogen and deposited on the surface of the silicon core, gradually generating polysilicon rods of the required specifications.
[0046] In the related art, an air inlet and an air outlet are provided at the bottom of the reduction furnace. The air inlet is connected to a mixed gas of trichlorosilane and hydrogen, and the air outlet is connected to a reduction tail gas outlet pipe. The mixed gas of trichlorosilane and hydrogen enters the interior of the reduction furnace through an air inlet nozzle under high pressure, and the reduction tail gas is discharged to the next process through the air outlet.
[0047] It should be noted that as the reaction proceeds, the generated silicon rods gradually become thicker. However, since the air inlet is located at the bottom of the reduction furnace, the gas concentration at the bottom of the reduction furnace is higher and the gas concentration at the top of the reduction furnace is lower.
[0048] As a result, the diameter of the silicon rods closer to the bottom of the reduction furnace will be larger, and the diameter of the silicon rods closer to the top of the reduction furnace will be smaller, causing the silicon rods in the reduction furnace to appear thicker at the bottom and thinner at the top, resulting in uneven growth quality of the silicon rods.
[0049] like Figure 1 As shown, an embodiment of the present application provides a reduction furnace, comprising: a furnace body 1, at least one first nozzle 2, and at least one second nozzle 3. The furnace body 1 is formed with a receiving cavity 11 for receiving silicon cores; the first nozzle 2 is disposed on the furnace body 1, and is used to receive gas and spray gas toward a first predetermined area; the second nozzle 3 is disposed on the furnace body 1, and is used to receive gas and spray gas toward a second predetermined area.
[0050] It should be noted that, in the height direction of the furnace body 1, the lowest position of the second nozzle 3 is higher than the highest position of the first nozzle 2. The trichlorosilane and hydrogen mixtures ejected from the first nozzle 2 and the second nozzle 3 respectively exchange heat with the interior of the reduction furnace, thereby making the temperature inside the furnace body 1 more uniform and controllable. In certain embodiments, the provision of the second nozzle 3 can increase the trichlorosilane gas phase concentration at the top of the furnace body 1, thereby resolving the problem in existing furnace models where varying trichlorosilane concentrations at different locations within the reduction furnace lead to varying thicknesses and uneven growth quality of silicon rods.
[0051] It should be noted that the first nozzle 2 and the second nozzle 3 are arranged at intervals, so that the distribution of the mixed gas of trichlorosilane and hydrogen inside the reduction furnace is more uniform.
[0052] Therefore, the reduction furnace provided in the embodiment of the present application can improve the gas concentration and temperature gradient in the reduction furnace, thereby making the production of silicon rods uniform and solving the problem of uneven growth of silicon rods in the reduction furnace.
[0053] It should be noted that the gas can pass through the first nozzle 2 under the driving of the first driving force and flow toward the first preset area to reach the middle and top of the reduction furnace.
[0054] It should be noted that the first preset area is a flow area formed when the gas discharged from the first nozzle 2 flows toward the interior of the accommodating chamber 11 under the driving of the first driving force. The first preset area is formed by the surface at the farthest displacement distance of the gas discharged from the first nozzle 2 under the driving of the first driving force and the inner wall of the accommodating chamber 11.
[0055] It should be noted that the first driving force can be provided by an air pump.
[0056] It should be noted that the gas can pass through the second nozzle 3 under the driving of the second driving force and flow toward the second preset area to reach the bottom of the reduction furnace.
[0057] It should be noted that the second preset area is a flow area formed by the gas discharged from the second nozzle 3 flowing toward the interior of the accommodating chamber 11 under the driving of the second driving force. The second preset area is formed by the surface at the farthest displacement distance of the gas discharged from the second nozzle 3 under the driving of the second driving force and the inner wall of the accommodating chamber 11.
[0058] It should be noted that the second driving force can be provided by an air pump.
[0059] It should be noted that the first preset area and the second preset area are at least partially stacked; when the lowest position of the second nozzle 3 is higher than the highest position of the first nozzle 2, the second preset area is located above the first preset area in the height direction of the furnace body 1.
[0060] It should be noted that there are multiple first nozzles 2, each of the multiple first nozzles 2 forms a first preset area, and the multiple first preset areas have multiple different arrangement methods. The arrangement methods of the multiple first preset areas are illustrated below in turn.
[0061] In a feasible embodiment, in the height direction of the vertical furnace body 1, two adjacent first preset areas are spaced apart, and one of the first preset areas at least partially overlaps with the other first preset area.
[0062] In another feasible embodiment, in the height direction of the furnace body 1 , two adjacent first preset areas are spaced apart, and one of the first preset areas at least partially overlaps with the other first preset area.
[0063] It is understandable that there is no restriction on the arrangement of the plurality of first preset areas, and the arrangement can be selected according to actual use requirements, as long as it is ensured that at least part of two adjacent first preset areas are overlapped.
[0064] It should be noted that there are multiple second nozzles 3, each of the multiple second nozzles 3 forms a second preset area, and the multiple second preset areas have multiple different arrangements. The arrangements of the multiple second preset areas are illustrated below in turn.
[0065] In a feasible embodiment, in the height direction of the vertical furnace body 1 , two adjacent second preset areas are spaced apart, and one of the second preset areas at least partially overlaps with the other second preset area.
[0066] In another feasible embodiment, in the height direction of the furnace body 1 , two adjacent second preset areas are spaced apart, and one of the second preset areas at least partially overlaps with the other second preset area.
[0067] It is understandable that there is no restriction on the arrangement of the plurality of second preset areas, and the arrangement can be selected according to actual use requirements, as long as it is ensured that at least part of two adjacent second preset areas are overlapped.
[0068] It should be noted that there are many different arrangements between the first preset area and the second preset area. The following describes the arrangements between the first preset area and the second preset area in turn with examples.
[0069] In a feasible embodiment, in the height direction of the furnace body 1 , the first preset area and the second preset area are arranged in parallel, and the upper part of the first preset area and the lower part of the second preset area overlap.
[0070] In another feasible embodiment, in the height direction of the furnace body 1 , one side of the first preset area is overlapped with one side of the second preset area.
[0071] It is understandable that there is no restriction on the arrangement of the first preset area and the second preset area, and it can be selected according to actual use requirements, as long as the first preset area and the second preset area at least partially overlap.
[0072] The first nozzle 2 provided in the embodiment of the present application is arranged on the furnace body 1, and the furnace body 1 is formed with a first opening, and the first opening is connected to the accommodating cavity 11. The first nozzle 2 is formed with a first mounting portion and a first injection portion, and the first mounting portion is used for an external gas source. The first injection portion passes through the first opening and is arranged toward the accommodating cavity 11; the first nozzle 2 can rotate with the first opening as the rotation center under the drive of a first external force.
[0073] The embodiment of the present application provides a plurality of first nozzles 2 , and the plurality of first nozzles 2 have a variety of different positional relationships. The positional relationships between the plurality of first nozzles 2 are described below with examples.
[0074] In a feasible embodiment, in the height direction of the furnace body 1 , two adjacent first nozzles 2 are spaced apart from each other, that is, one of the first nozzles 2 is located above the other first nozzle 2 .
[0075] In another feasible embodiment, in the height direction of the vertical furnace body 1 , two adjacent first nozzles 2 are spaced apart.
[0076] In addition, in another feasible embodiment, two adjacent first nozzles 2 are spaced apart in the height direction of the furnace body 1 , and are spaced apart in the height direction perpendicular to the furnace body 1 .
[0077] It is understandable that there is no restriction on the positional relationship between two adjacent first nozzles 2 and the positional relationship can be selected according to actual use requirements.
[0078] The second nozzle 3 provided in the embodiment of the present application is arranged on the furnace body 1, and the furnace body 1 is formed with a second opening, and the second opening is connected to the accommodating chamber 11. The second nozzle 3 is formed with a second mounting portion and a second injection portion, and the second mounting portion is used to connect to an external gas source. The second injection portion passes through the second opening and is arranged toward the accommodating chamber 11; the second nozzle 3 can rotate with the second opening as the rotation center under the drive of a second external force.
[0079] The embodiment of the present application provides a plurality of second nozzles 3 , and the plurality of second nozzles 3 have a variety of different positional relationships. The positional relationships between the plurality of second nozzles 3 are described below with examples.
[0080] In a feasible embodiment, in the height direction of the furnace body 1 , two adjacent second nozzles 3 are spaced apart from each other, that is, one of the second nozzles 3 is located above the other second nozzle 3 .
[0081] In another feasible embodiment, in the height direction of the vertical furnace body 1 , two adjacent second nozzles 3 are spaced apart.
[0082] In addition, in another feasible embodiment, two adjacent second nozzles 3 are spaced apart in the height direction of the furnace body 1 , and are spaced apart in the height direction perpendicular to the furnace body 1 .
[0083] It is understandable that the positional relationship between two adjacent second nozzles 3 is not limited and can be selected according to actual usage requirements.
[0084] The furnace body 1 provided in the embodiment of the present application includes: a top wall 12, a side wall 13 and a bottom wall 14 connected in sequence; the top wall 12 is arranged on one side end of the side wall 13, and the bottom wall 14 is arranged on the other side end of the side wall 13; in the height direction of the furnace body 1, the top wall 12 and the bottom wall 14 are arranged in parallel, and the top wall 12 is located above the bottom wall 14; the top wall 12, the side wall 13 and the bottom wall 14 together enclose a accommodating cavity 11.
[0085] It is understandable that the top wall 12 and the bottom wall 14 are arranged opposite to each other. In the height direction of the furnace body 1, the top wall 12 and the bottom wall 14 are arranged with a gap therebetween.
[0086] It should be noted that the top wall 12 has a variety of different configuration shapes. The configuration shapes of the top wall 12 are described below with examples.
[0087] In a feasible embodiment, the top wall 12 is an arc-shaped wall, which is fixedly arranged on the side of the side wall 13 away from the bottom wall 14. The arc-shaped wall can reflect the internal heat of the accommodating cavity 11, thereby increasing the temperature of the upper part of the accommodating cavity 11.
[0088] In another feasible embodiment, the top wall 12 is a wall surface, and the wall surface is fixedly arranged on the side of the side wall 13 facing away from the bottom wall 14 .
[0089] It is understandable that there is no limitation on the shape of the top wall 12 , and it can be selected according to actual use requirements, as long as the top wall 12 is arranged on the side of the side wall 13 away from the bottom wall 14 .
[0090] It should be noted that the side wall 13 has a variety of different configuration shapes. The configuration shapes of the side wall 13 are described below with examples.
[0091] In a feasible embodiment, the side wall 13 is a cylindrical side wall 13 , and the accommodating cavity 11 is a cylindrical cavity.
[0092] In another feasible embodiment, the side wall 13 is a square side wall 13 , and the accommodating cavity 11 is a square cavity.
[0093] It should be noted that there is no limitation on the shape of the side wall 13 and it can be selected according to actual use requirements.
[0094] It should be noted that the first nozzle 2 has a variety of different installation positions. The installation positions of the first nozzle 2 are described below with examples.
[0095] In a feasible embodiment, the first nozzle 2 is installed on the bottom wall 14 , and the spraying portion of the first nozzle 2 is arranged toward a side close to the accommodating cavity 11 .
[0096] In another feasible embodiment, the first nozzle 2 is installed on the side wall 13 , and the spraying portion of the first nozzle 2 is arranged toward a side close to the accommodating cavity 11 .
[0097] In addition, in other feasible embodiments, there are at least two first nozzles 2, one of which is arranged on the bottom wall 14, and the spray portion is arranged toward the side close to the accommodating cavity 11; and the other first nozzle 2 is arranged on the side wall 13, and the spray portion is arranged toward the side close to the accommodating cavity 11.
[0098] It is understandable that there is no restriction on the installation position of the first nozzle 2 and it can be selected according to actual use requirements. It only needs to ensure that the injection portion of the first nozzle 2 is set toward the side close to the accommodating cavity 11 so that the gas can flow toward the side close to the silicon core.
[0099] It should be noted that the second nozzle 3 has a variety of different installation positions. The installation positions of the second nozzle 3 are described below with examples.
[0100] In a feasible embodiment, the second nozzle 3 is disposed on the top wall 12 , and the spraying portion of the second nozzle 3 is disposed toward a side close to the accommodating cavity 11 .
[0101] In another feasible embodiment, the second nozzle 3 is disposed on the side wall 13 , and the spraying portion of the second nozzle 3 is disposed toward a side close to the accommodating cavity 11 .
[0102] In addition, in another feasible embodiment, at least two second nozzles 3 are provided, wherein one second nozzle 3 is provided on the top wall 12, and the spray portion is provided toward the side close to the accommodating cavity 11; wherein the other second nozzle 3 is provided on the side wall 13, and the spray portion is provided toward the side close to the accommodating cavity 11.
[0103] It is understandable that the installation position of the second nozzle 3 is not restricted and can be selected according to actual usage requirements. It only needs to ensure that the injection portion of the second nozzle 3 is set towards the side close to the accommodating cavity 11 so that the gas can flow towards the side close to the silicon rod.
[0104] The reduction furnace provided in the embodiment of the present application is formed with an outlet communicating with the accommodating chamber 11 , and the outlet is provided on the bottom wall 14 .
[0105] It should be noted that the outlet is used to guide the hydrogen chloride after the reaction to the next process. A guide pipe is provided on the side of the outlet away from the accommodating chamber 11, one end of the guide pipe is connected to the outlet, and the other end of the guide pipe is connected to the next process.
[0106] The reduction furnace provided in the embodiment of the present application further includes: a first conveyor member 4 and a second conveyor member 5. One end of the first conveyor member 4 is connected to the first nozzle 2, and the other end of the first conveyor member 4 is connected to an external gas source; one end of the second conveyor member 5 is connected to the second nozzle 3, and the other end of the second conveyor member 5 is connected to an external gas source.
[0107] It should be noted that the first conveyor member 4 and the second conveyor member 5 can be arranged in communication. In this case, the reduction furnace provided in the embodiment of the present application further includes a diverter. The diverter is formed with an input portion, a first output portion, and a second output portion that are interconnected.
[0108] It should be noted that the end of the first conveying member 4 away from the first nozzle 2 is connected to the first output part, the end of the second conveying member 5 away from the second nozzle 3 is connected to the second output part, and the input part is connected to an external gas source.
[0109] It can be understood that the flow diverter can divert the gas in the gas source to the first conveying member 4 and the second conveying member 5 , so that the first conveying member 4 and the second conveying member 5 can simultaneously convey the gas.
[0110] The reduction furnace provided in the embodiment of the present application further includes: at least one pressure sensor, which is disposed on at least one of the first conveying member 4 , the second conveying member 5 and the outlet pipe.
[0111] It should be noted that the pressure sensor has a variety of different installation positions. The installation positions of the pressure sensor are described below with examples.
[0112] In a feasible embodiment, the pressure sensor is provided on the first conveying member 4 , and the pressure sensor is used to detect the gas pressure inside the first conveying member 4 .
[0113] In another possible embodiment, a pressure sensor is provided on the second conveying member 5 , and the pressure sensor is used to detect the gas pressure inside the second conveying member 5 .
[0114] In addition, in other feasible implementations, a pressure sensor is provided on the outlet pipe, and the pressure sensor is used to detect the pressure of the gas inside the outlet pipe.
[0115] It is understandable that there is no restriction on the installation location of the pressure sensor, and it can be selected according to actual usage requirements, as long as the pressure sensor can detect the internal air pressure at the installation location.
[0116] It should be noted that there are various installation quantities of pressure sensors. The following provides examples of the installation quantities of pressure sensors.
[0117] In a feasible embodiment, one pressure sensor is provided, and the pressure sensor is arranged on the outlet pipe, and the pressure sensor is used to detect the air pressure inside the outlet pipe.
[0118] In another possible embodiment, two pressure sensors are provided, wherein one pressure sensor is provided on the first conveying member 4 , and the other pressure sensor is provided on the second conveying member 5 .
[0119] In addition, in another possible embodiment, three pressure sensors are provided, wherein the first pressure sensor is provided on the outlet pipe, wherein the second pressure sensor is provided on the first conveying member 4 , and wherein the third pressure sensor is provided on the second conveying member 5 .
[0120] It is understandable that there is no limit to the number of pressure sensors that can be set, and they can be selected according to actual usage requirements.
[0121] An embodiment of the present application provides a reduction furnace processing method, which is applied to the reduction furnace provided in the above embodiment; it includes the following steps: first molding: opening the first nozzle 2, the gas is sprayed along the first nozzle 2 and flows within the first preset area; second molding, opening the second nozzle 3, the gas is sprayed along the second nozzle 3 and flows within the second preset area.
[0122] It should be noted that, when the number of the first nozzle 2 and the second nozzle 3 provided in the above embodiment is different, there are multiple reduction furnace processing methods. The following describes the implementation steps of the reduction furnace processing method in turn with examples.
[0123] In one embodiment, the first nozzle 2 delivers gas toward the first preset area at a pressure of 0.6-0.8 MPa for 50 hours, and the second nozzle 3 delivers gas toward the second preset area at a pressure of 0.6-0.8 MPa for 30 hours.
[0124] In another feasible embodiment, two second nozzles 3 are provided, and the first nozzle 2 delivers gas toward the first preset area at a pressure of 0.6-0.8MPa for 30 hours and then ends, wherein the first second nozzle 3 delivers gas toward the corresponding second preset area at a pressure of 0.6-0.8MPa for 30 hours and then ends, wherein the second second nozzle 3 delivers gas toward the corresponding second preset area at a pressure of 0.6-0.8MPa for 20 hours and then ends.
[0125] It is understandable that there is no restriction on the implementation steps of the reduction furnace processing method, and they can be selected according to actual use requirements.
[0126] Those skilled in the art will readily appreciate other embodiments of the present invention after considering the specification and practicing the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the present invention that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein. The description and examples are to be considered as exemplary only, and the true scope and spirit of the present application are indicated by the following claims.
[0127] It should be understood that the present application is not limited to the exact structure described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present application is limited only by the appended claims.
Claims
1. A reduction furnace, characterized in that: include, A furnace body, wherein the furnace body is formed with a receiving cavity, and the receiving cavity is used to receive the silicon core; at least one first nozzle, the first nozzle being disposed on the furnace body, the first nozzle being used to contain gas, and the first nozzle being capable of spraying gas toward a first preset area; at least one second nozzle, the second nozzle being disposed on the furnace body, the second nozzle being used to contain gas, and the second nozzle being capable of spraying gas toward a second preset area; Wherein, the first preset area and the second preset area are at least partially stacked; in the height direction of the furnace body, the lowest position of the second nozzle is higher than the highest position of the first nozzle.
2. A reduction furnace according to claim 1, characterized in that: The first nozzle is arranged on the bottom plate of the furnace body; The furnace body is formed with a first opening, which is connected to the accommodating cavity. The first nozzle is formed with a first mounting portion and a first injection portion. The first mounting portion is used to connect to an external gas source. The first injection portion passes through the first opening and is arranged toward the accommodating cavity.
3. A reduction furnace according to claim 2, characterized in that: There are multiple first nozzles, and two adjacent first nozzles are spaced apart in the height direction of the furnace body; And / or, a plurality of first nozzles are provided, and two adjacent first nozzles are spaced apart in a height direction perpendicular to the furnace body.
4. A reduction furnace according to claim 2, characterized in that: The second nozzle is arranged on the furnace body; The furnace body is formed with a second opening, which is connected to the accommodating cavity. The second nozzle is formed with a second mounting portion and a second injection portion. The second mounting portion is used to connect to an external gas source. The second injection portion passes through the second opening and is arranged toward the accommodating cavity.
5. A reduction furnace according to claim 4, characterized in that: There are multiple second nozzles, and two adjacent second nozzles are spaced apart in the height direction of the furnace body; And / or, a plurality of second nozzles are provided, and two adjacent second nozzles are spaced apart in a height direction perpendicular to the furnace body.
6. A reduction furnace according to claim 4, characterized in that: The furnace body includes: a top wall, a side wall, and a bottom wall connected in sequence; the top wall is arranged on one end of the side wall, and the bottom wall is arranged on the other end of the side wall; in the height direction of the furnace body, the top wall and the bottom wall are arranged parallel to each other, and the top wall is located above the bottom wall; The top wall, the side wall and the bottom wall together enclose the accommodating cavity.
7. A reduction furnace according to claim 6, characterized in that: The first nozzle is arranged on the bottom plate of the furnace body; The second nozzle is disposed on at least one of the top wall and the side wall.
8. The reduction furnace according to claim 6, characterized in that: The reduction furnace is formed with an outlet communicating with the accommodating chamber, and the outlet is arranged on the bottom wall.
9. A reduction furnace according to any one of claims 1 to 8, characterized in that: Also includes: a first conveying member, one end of which is connected to the first nozzle, and the other end of which is connected to an external gas source; The second conveying member has one end connected to the second nozzle and the other end connected to an external gas source.
10. A reduction furnace processing method, applied to the reduction furnace according to any one of claims 1 to 9, characterized in that: The steps include: First molding: the first nozzle is opened, and the gas is ejected along the first nozzle and flows in the first preset area; Second molding: Open the second nozzle, and the gas is ejected along the second nozzle and flows in the second preset area.