Semiconductor reaction cavity pressure control method and computer readable storage medium

Abstract

The invention discloses a semiconductor reaction cavity pressure control method and a computer readable storage medium. The method comprises the following steps: respectively starting a mass flow controller corresponding to each path of gas according to a time sequence; detecting the real opening time of the mass flow controller and the opening pressure corresponding to the opening time at the tail end pipeline of the mass flow controller corresponding to each path of gas; according to the opening time and the opening pressure corresponding to each path of gas and the transfer function corresponding to each path of gas, the pressure initial value after ventilation of each path of gas is completed is calculated; and accumulating the pressure initial value of each path of gas to obtain a total pressure initial value entering the cavity.

Description

Technical Field

[0001] The present invention relates to pressure control, and in particular to a method for controlling pressure in a semiconductor reaction chamber. Background Art

[0002] During the semiconductor thin film deposition process, the stability of the chamber pressure is crucial for thin film deposition. There are two main ways to control the vacuum chamber pressure: upstream flow control and downstream flow control.

[0003] Upstream flow control regulates pressure by adjusting the gas flow into the chamber. A common flow control device is a mass flow controller (MFC). The MFC only controls the flow required to reach the gas holder, where the gas then flows through the pipeline to the reaction chamber for deposition.

[0004] Downstream flow control is achieved by adjusting the opening of the butterfly valve (TV) to control the pressure. The vacuum pump speed is usually constant, and the TV controls the opening according to the reading of the vacuum gauge in the cavity, thereby achieving the purpose of controlling the cavity pressure.

[0005] However, the above upstream and downstream control has certain defects:

[0006] First, the pressure of the cavity is fed back to the TV through the vacuum gauge for pressure control, but the TV cannot obtain the flow and pressure signals most quickly, and the responsiveness of the pressure control is slow. Specifically, the TV controls the pressure through self-learning, and sets the learning parameters of the TV. For example, the gas flow rate is 11000sccm (including He, O2, etc.), and the target pressure is set to 9.5torr. Under this condition, the TV records the pressure control curve, and then applies the curve to subsequent pressure control. This type of pressure control is relatively limited. The flow and pressure set by the TV are fixed. When switching between different pressures and flows, its matching ability is poor (it cannot match different processes), so the pressure control speed is slow.

[0007] Secondly, TV controls pressure through self-learning (for example, flow rate 11000sccm, pressure 9.5torr). After self-learning, TV remembers this pressure control method, and the pressure control accuracy is poor. Different processes require the opening of different MFCs in sequence, which require pre-flow and then the flow of some reaction source gas. During this process, the flow and pressure are constantly changing, and self-learning pressure control cannot respond quickly and meet the requirements. Summary of the Invention

[0008] In order to overcome the defects of the prior art, the present invention provides a semiconductor reaction chamber pressure control method and a computer-readable storage medium.

[0009] The semiconductor reaction chamber pressure control method of the present invention may include the following steps:

[0010] Open the mass flow controller corresponding to each gas channel in sequence;

[0011] Detecting the actual opening time of the mass flow controller and the opening pressure corresponding to the opening time at the terminal pipeline of the mass flow controller corresponding to each gas channel;

[0012] Calculate the initial pressure value of each gas channel after the ventilation ends according to the opening time and the opening pressure corresponding to each gas channel and the transfer function corresponding to each gas channel;

[0013] The initial pressure value of each gas path is accumulated to obtain the initial value of the total pressure entering the cavity.

[0014] In one embodiment, the method further comprises:

[0015] A feedback control algorithm is used according to the initial value of the total pressure so that the output of the feedback control algorithm gradually approaches the target pressure value of the cavity.

[0016] In one embodiment, the method further comprises:

[0017] The output controls the opening of a butterfly valve, thereby regulating the pressure of the cavity, wherein the butterfly valve is connected to the downstream end of the cavity.

[0018] In one embodiment, the feedback control algorithm is a PID control algorithm.

[0019] In one embodiment, the feedback control algorithm is implemented by a PID controller.

[0020] In one embodiment, the method further comprises:

[0021] A terminal valve detector is provided at the terminal pipeline of the mass flow controller to detect the opening time and the opening pressure.

[0022] In one embodiment, each gas path corresponds to each process.

[0023] In one embodiment, the mass flow controller is located at the upstream end of the cavity.

[0024] In one embodiment, calculating the initial pressure value of each gas channel after ventilation ends according to the opening time and the opening pressure corresponding to each gas channel and the transfer function corresponding to each gas channel includes integrating the transfer function between the opening time and the ventilation end time.

[0025] The present invention also provides a computer-readable storage medium having computer instructions stored thereon, which, when executed, execute the semiconductor reaction chamber pressure control method as described above.

[0026] The present invention incorporates a terminal valve detector at the end of the MFC, enabling more intuitive measurement of the actual MFC opening time and the pressure and flow rate of the MFC terminal pipeline, serving as the basis for PID control calculations. Furthermore, the present invention implements delayed PID control to better match different processes and achieve rapid response and pressure control. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The above summary of the invention and the following detailed description of the present invention will be better understood when read in conjunction with the accompanying drawings. It should be noted that the drawings are only examples of the invention claimed. In the drawings, the same reference numerals represent the same or similar elements.

[0028] Figure 1 A schematic diagram showing a conventional semiconductor reaction chamber pressure control method;

[0029] Figure 2 A schematic diagram of a semiconductor reaction chamber pressure control method according to an embodiment of the present invention is shown;

[0030] Figure 3 A schematic diagram of delayed PID control according to an embodiment of the present invention is shown;

[0031] Figure 4 A simulation diagram of a simulated process according to an embodiment of the present invention is shown;

[0032] Figure 5 Shows the traditional pressure control curve;

[0033] Figure 6 FIG. 4 shows a voltage control curve according to an embodiment of the present invention. DETAILED DESCRIPTION

[0034] The detailed features and advantages of the present invention are described in detail below in the specific embodiments. The content is sufficient for any person skilled in the art to understand the technical content of the present invention and implement it accordingly, and based on the description, claims and drawings disclosed in this specification, those skilled in the art can easily understand the relevant purposes and advantages of the present invention. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this embodiment. On the contrary, the purpose of introducing the invention in conjunction with the embodiment is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide an in-depth understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0035] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0036] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood to refer to the orientations depicted in that section and the accompanying drawings. These relative terms are used solely for convenience of description and do not necessarily imply that the devices described herein must be manufactured or operated in a specific orientation. Therefore, they should not be construed as limiting the present invention.

[0037] It is understood that although the terms "first," "second," "third," etc. may be used herein to describe various components, channels, assemblies, regions, layers, and / or portions, these components, channels, assemblies, regions, layers, and / or portions should not be limited by these terms, and these terms are merely used to distinguish different components, channels, assemblies, regions, layers, and / or portions. In addition, the terms "first," "second," and "third" are used for descriptive purposes only and should not be understood as indicating or implying relative importance.

[0038] As used in this application and the claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" are not intended to refer to the singular but may include the plural. Generally speaking, the terms "comprises" and "include" only indicate the inclusion of the steps and elements specifically identified, and these steps and elements do not constitute an exclusive list. A method or apparatus may also include other steps or elements.

[0039] In some embodiments, numbers are used to describe the quantity of components and attributes. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise stated, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the description and claims are approximate values, which may change according to the required features of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of the present application are approximate values, in specific embodiments, the settings of such numerical values ​​are as accurate as possible within the feasible range.

[0040] At the same time, this application uses specific terms to describe the embodiments of this application. For example, "one embodiment," "an embodiment," and / or "some embodiments" refer to a certain feature, structure, or characteristic related to at least one embodiment of this application. Therefore, it should be emphasized and noted that "one embodiment," "an embodiment," or "an alternative embodiment" mentioned twice or multiple times in different locations in this specification does not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of this application may be appropriately combined.

[0041] Butterfly valves (TVs) are key components in high-end manufacturing equipment, such as semiconductor processing and etching processes. They achieve pressure control by adjusting their opening. They open and close cavity gas pipelines, control flow, and regulate pressure according to target requirements. They offer high stability and reliability, fast response, and precise pressure control, making them widely used in semiconductors, new display technologies, advanced materials, and solar energy.

[0042] The existing cavity pressure control method based on the butterfly valve opening is generally a PID control algorithm. The existing control process based on the PID control algorithm is generally to establish a mathematical model based on the system, adjust parameters based on the mathematical model, and generate a control signal based on each parameter to control the cavity pressure.

[0043] Figure 1 A schematic diagram of a conventional semiconductor reaction chamber pressure control method is shown. Before each gas enters chamber 102, a gas mass flow controller (MFC) 101 controls the flow of multiple gases. A vacuum gauge 103 reads the pressure of chamber 102 and transmits the pressure value via Ethernet to a butterfly valve (TV) 104 located downstream of the chamber. A PID controller 105 outputs a control signal to control the opening of the butterfly valve, thereby regulating the chamber pressure. The gas passes through a foreline 106 and is pumped away by a vacuum pump 107.

[0044] The above-mentioned traditional pressure control method has many disadvantages.

[0045] First, a butterfly valve (TV) controls pressure through self-learning. The TV's learning parameters are set, for example, a gas flow rate of 11,000 sccm (including He and O2) and a target pressure of 9.5 torr. Under these conditions, the TV records the pressure control curve, which is then applied to subsequent pressure control. This pressure control method is quite limited. The flow rate and pressure set by the TV are fixed. Switching between different pressure and flow rates results in poor matching (unable to adapt to different processes), resulting in slow pressure control.

[0046] Secondly, when the process is in progress, the MFC is turned on through the remote interface. It takes a certain response time from clicking the MFC start command on the interface to the actual start of the MFC. This delay will cause deviations in the gas flow and pressure entering the chamber.

[0047] To address the aforementioned drawbacks, the present invention incorporates an end-valve detector at the end of the MFC to more intuitively determine the actual MFC opening time and the pressure and flow rate in the end-pipeline of this MFC. This time and pressure form the calculation basis for PID control. Furthermore, the present invention implements delayed PID control to better match different processes and achieve rapid response and pressure control. The so-called delay is intended to match different process requirements. Conventional TV pressure control is relatively limited. With the addition of an end-valve detector, the precise opening time of the MFC and its end-pressure can be collected. To match different process requirements, it is necessary to sequentially open several MFCs. This allows for the accurate inlet pressure to be determined through cumulative calculation (i.e., the initial pressure is more accurate, resulting in faster and more efficient pressure control). This is the so-called delay. Furthermore, the desired pressure is obtained through the reading of a vacuum gauge. With both the target pressure and the initial actual pressure value known, the actual pressure control curve can be derived through transfer function and PID control. By understanding the actual opening time and pressure of the end-valve, calculating through integral accumulation and then transferring this information to PID control, the response efficiency is faster and more accurate.

[0048] Figure 2A schematic diagram of a semiconductor reaction chamber pressure control method according to an embodiment of the present invention is shown. The semiconductor device involved in the method includes at least a mass flow controller (MFC) 201, an end valve detector 202, a chamber 203, a vacuum gauge 204, a butterfly valve 205, a fore-stage vacuum pipeline 206, a vacuum pump 207, and a PID controller (not shown) that performs PID control 208. The end valve detector 202 of the present invention is located at the end pipeline of the MFC 201. Each MFC 201 is provided with an end valve detector 202. The end valve detector 202 is used to detect the actual opening time of the MFC and the pressure of the end pipeline of this MFC, and send the opening time and pressure values ​​to the PID controller for PID control. According to different recipes, different gases can be input, so that the opening time of each gas will have a sequence, resulting in different delay times and corresponding delayed PID control 208.

[0049] The vacuum gauge 204 and the PID controller may be physically connected via a wired connection, and the PID controller may obtain the pressure in the chamber read by the vacuum gauge.

[0050] The PID controller obtains a delayed but accurate initial value of the total pressure, then gradually approaches the pressure of the vacuum gauge reading, and outputs a PID control signal to TV to control the opening of the butterfly valve, thereby adjusting the cavity pressure.

[0051] Figure 3 FIG. 4 shows a schematic diagram of delayed PID control according to an embodiment of the present invention.

[0052] like Figure 3 As shown, in this embodiment, two gas paths are opened successively: the first gas path IN1 and the second gas path IN2. There is a transmission delay time t0 between the first gas path IN1 and the second gas path IN2.

[0053] Each gas channel corresponds to an MFC for flow control. At the same time, an end valve detector is added to the end pipeline of each MFC to measure the exact opening time of each gas channel at the end pipeline of the MFC and the pressure value corresponding to the opening time.

[0054] For multiple gas (including Figure 3 The PID controller calculates the initial pressure value of each gas entering the cavity after the gas is introduced into the cavity based on the opening time of each gas and the corresponding pressure value of the opening time. For example, P IN1 、P IN2… After the initial pressure values ​​of each channel are accumulated, the total initial pressure value P is obtained. 初始 , see formula (1)

[0055] P 初始 =P IN1 +P IN2 +…+P INn Formula (1)

[0056] in, Where a and b are the start and end times of the first gas IN1, respectively. c and d are the start and end times of the second gas IN2, respectively. c is a value obtained by delaying a by t0. p1(t), p2(t),…pn(s) are the time-dependent transfer functions of the pressures of the respective gases.

[0057] For example, the transfer function corresponding to a certain gas path can be as follows: Figure 3 As shown below:

[0058]

[0059] In one embodiment, different gases may correspond to different transfer functions.

[0060] It should be pointed out that Figure 3 Only the transfer function of one gas path is shown. In practice, each gas path should correspond to its own transfer function.

[0061] The PID controller calculates the real-time initial value of the total pressure P 初始 Then, PID control is performed to gradually approach the pressure of the vacuum gauge reading (target pressure value). The PID controller outputs a control signal to the butterfly valve 205 to control the opening of the butterfly valve, thereby adjusting the cavity pressure.

[0062] Figure 4 This figure shows a simulation diagram of a process according to one embodiment of the present invention. Steps 1 through 4 involve gas flow into the chamber, and pressure control on the TV has not yet begun. From step 5, pressure control begins at 4.2 Torr. Steps 5 through 13 are the reaction phase, and steps 14 through 15 are post-reaction evacuation, with no pressure control on the TV. The total duration is 190 seconds.

[0063] Figure 5 A conventional pressure control curve is shown.

[0064] from Figure 5 It can be clearly seen that step 5, which begins with pressure control at 4.2 torr, has a slow rate and significant overshoot. A relatively stable state is achieved 4.2 seconds after receiving the pressure control command. At 31.9 seconds, the pressure reaches a maximum of 4.230 torr. It fluctuates continuously over the next 15 seconds, reaching a minimum of 4.178 torr at 36 seconds.

[0065] In step 8, gas A is suddenly introduced at 9000 sccm, and the pressure control curve oscillates obviously within 2 seconds of this step.

[0066] In step 11, the flow rate of gas A was reduced from 9000 sccm to 12000 sccm. In this range, there was an unstable pressure control state for about 3.4 s.

[0067] In step 12, the flow rate of gas B is reduced from 2500 sccm to 1600 sccm. In this range, there is an unstable pressure control state for about 2.2 s.

[0068] Figure 6 FIG. 4 shows a voltage control curve according to an embodiment of the present invention. Figure 6 This is the improved pressure control curve. It clearly shows a faster pressure control rate with no noticeable overshoot. A relatively stable state was achieved 3.9 seconds after receiving the pressure control command. At 47.9 seconds, the pressure reached a maximum of 4.289 Torr, and at 131.4 seconds, it reached a minimum of 4.176 Torr.

[0069] In step 8, gas A is suddenly introduced at 9000 sccm, and the pressure control curve becomes significantly more stable.

[0070] In step 11, the flow rate of gas A was reduced from 9000 sccm to 12000 sccm, and the pressure control curve was significantly more stable.

[0071] In step 12, the flow rate of gas B is reduced from 2500 sccm to 1600 sccm, and the pressure reduction is not as large as before.

[0072] The present invention discloses a method for controlling the pressure of a semiconductor reaction chamber, which may include the following steps:

[0073] Open the mass flow controller corresponding to each gas channel in sequence;

[0074] Detecting the actual opening time of the mass flow controller and the opening pressure corresponding to the opening time at the terminal pipeline of the mass flow controller corresponding to each gas channel;

[0075] Calculate the initial pressure value of each gas channel after the ventilation ends according to the opening time and the opening pressure corresponding to each gas channel and the transfer function corresponding to each gas channel;

[0076] The initial pressure value of each gas path is accumulated to obtain the initial value of the total pressure entering the cavity.

[0077] In one embodiment, the method further comprises:

[0078] A feedback control algorithm is used according to the initial value of the total pressure so that the output of the feedback control algorithm gradually approaches the target pressure value of the cavity.

[0079] In one embodiment, the method further comprises:

[0080] The output controls the opening of a butterfly valve, thereby regulating the pressure of the cavity, wherein the butterfly valve is connected to the downstream end of the cavity.

[0081] In one embodiment, the feedback control algorithm is a PID control algorithm. It should be noted that the PID control algorithm of the present invention is well known to those skilled in the art and will not be described in detail here.

[0082] In one embodiment, the feedback control algorithm is implemented by a PID controller.

[0083] In one embodiment, the method further comprises:

[0084] A terminal valve detector is provided at the terminal pipeline of the mass flow controller to detect the opening time and the opening pressure.

[0085] In one embodiment, each gas path corresponds to each process.

[0086] In one embodiment, the mass flow controller is located at the upstream end of the cavity.

[0087] In one embodiment, calculating the initial pressure value of each gas channel after ventilation ends according to the opening time and the opening pressure corresponding to each gas channel and the transfer function corresponding to each gas channel includes integrating the transfer function between the opening time and the ventilation end time.

[0088] The present invention also provides a computer-readable storage medium having computer instructions stored thereon, which, when executed, execute the semiconductor reaction chamber pressure control method as described above.

[0089] Those skilled in the art will appreciate that the various illustrative components, modules, blocks, units, circuits, systems, and steps described in conjunction with the embodiments disclosed herein may be implemented by hardware, software (including firmware, resident software, microcode, etc.), or a combination of the two. To clearly illustrate this interchangeability of hardware and software, the various illustrative components, modules, blocks, units, circuits, systems, and steps are generally described above in terms of their functionality. Whether such functionality is implemented as hardware or software depends on the specific application and the design constraints imposed on the overall system. A skilled person may implement the described functionality in different ways for each specific application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.

[0090] Flowcharts are used in this application to illustrate the operations or steps performed by the system according to the embodiments of the present application. It should be understood that the preceding or following operations or steps are not necessarily performed precisely in order. Instead, the various operations or steps may be processed in reverse order or simultaneously. At the same time, other operations or steps may be added to these processes, or one or more operations or steps may be removed from these processes.

[0091] Unless explicitly stated in the claims, the order of the processing elements and sequences, the use of alphanumeric characters, or the use of other names described in this application are not intended to limit the order of the processes and methods of this application.

[0092] Furthermore, aspects of the present application may take the form of a computer program product embodied in one or more computer-readable media including computer-readable program code.

[0093] A computer-readable signal medium may include a propagated data signal containing computer program code, for example, in baseband or as part of a carrier wave. The propagated signal may have a variety of manifestations, including electromagnetic, optical, etc., or a suitable combination thereof. A computer-readable signal medium may be any computer-readable medium other than a computer-readable storage medium that can be connected to an instruction execution system, device, or apparatus to communicate, propagate, or transmit a program for use. The program code on the computer-readable signal medium may be propagated via any suitable medium, including radio, cable, fiber optic cable, RF, or similar media, or any combination of the above.

[0094] The computer program code required for the operation of each part of the present application can be written in any one or more programming languages, including object-oriented programming languages ​​such as Java, Scala, Smalltalk, Eiffel, JADE, Emerald, C++, C#, VB.NET, Python, etc., conventional procedural programming languages ​​such as C language, Visual Basic, Fortran 2003, Perl, COBOL 2002, PHP, ABAP, dynamic programming languages ​​such as Python, Ruby and Groovy, or other programming languages. The program code can be run entirely on the user's computer, or as a separate software package on the user's computer, or partly on the user's computer and partly on a remote computer, or entirely on a remote computer or server. In the latter case, the remote computer can be connected to the user's computer through any network form, such as a local area network (LAN) or a wide area network (WAN), or connected to an external computer (e.g., via the Internet), or in a cloud computing environment, or used as a service such as software as a service (SaaS).

[0095] Those skilled in the art will appreciate that information, signals, and data may be represented using any of a variety of different technologies and techniques. For example, data, instructions, commands, information, signals, bits, symbols, and chips cited throughout the foregoing description may be represented by voltages, currents, electromagnetic waves, magnetic fields or particles, optical fields or particles, or any combination thereof.

[0096] The steps of the methods or algorithms described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. The software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to the processor so that the processor can read and write information from / to the storage medium. In an alternative, the storage medium may be integrated into the processor. In an alternative, the processor and the storage medium may reside in the user terminal as discrete components.

[0097] In one or more exemplary embodiments, the functions described may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software as a computer program product, the functions may be stored on or transmitted via a computer-readable medium as one or more instructions or codes. Computer-readable media include both computer storage media and communication media, including any media that facilitates the transfer of a computer program from one location to another. A storage medium may be any available medium that can be accessed by a computer. By way of example and not limitation, such computer-readable media may include RAM, ROM, EEPROM, CD-ROM or other optical disk storage, magnetic disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and that can be accessed by a computer. Any connection is also properly referred to as a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using a coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwaves, then the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwaves are included in the definition of medium. As used herein, disk and disc include compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk and Blu-ray disc, where disks typically reproduce data magnetically, while discs reproduce data optically with lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0098] The terms and expressions used above are for descriptive purposes only, and the present invention is not limited to these terms and expressions. The use of these terms and expressions is not intended to exclude any equivalent features shown and described (or portions thereof), and it should be recognized that various modifications that may exist are also intended to be included within the scope of the claims. Other modifications, variations, and substitutions are also possible. Accordingly, the claims should be deemed to cover all such equivalents.

[0099] Similarly, it should be noted that in order to simplify the description of the present disclosure and thus facilitate understanding of one or more embodiments of the invention, the foregoing description of the embodiments of the present disclosure sometimes combines multiple features into a single embodiment, figure, or description thereof. However, this disclosure method does not mean that the subject matter of the present disclosure requires more features than those mentioned in the claims.

[0100] Similarly, it should be pointed out that although the present invention has been described with reference to the current specific embodiments, ordinary technicians in this technical field should realize that the above embodiments are only used to illustrate the present invention, and various equivalent changes or substitutions can be made without departing from the spirit of the present invention. Therefore, as long as the changes and modifications to the above embodiments are within the scope of the essential spirit of the present invention, they will fall within the scope of the claims of this application.

Claims

1. A semiconductor reaction chamber pressure control method, characterized in that: The method comprises: Open the mass flow controller corresponding to each gas channel in sequence; Detecting the actual opening time of the mass flow controller and the opening pressure corresponding to the opening time at the terminal pipeline of the mass flow controller corresponding to each gas channel; Calculate the initial pressure value of each gas channel after the ventilation ends according to the opening time and the opening pressure corresponding to each gas channel and the transfer function corresponding to each gas channel; The initial pressure value of each gas path is accumulated to obtain the initial value of the total pressure entering the cavity.

2. The semiconductor reaction chamber pressure control method according to claim 1, wherein: Also includes: A feedback control algorithm is used according to the initial value of the total pressure so that the output of the feedback control algorithm gradually approaches the target pressure value of the cavity.

3. The semiconductor reaction chamber pressure control method according to claim 2, wherein: Also includes: The output controls the opening of a butterfly valve, thereby regulating the pressure of the cavity, wherein the butterfly valve is connected to the downstream end of the cavity.

4. The semiconductor reaction chamber pressure control method according to claim 2, wherein: The feedback control algorithm is a PID control algorithm.

5. The semiconductor reaction chamber pressure control method according to claim 2, wherein: The feedback control algorithm is implemented by a PID controller.

6. The semiconductor reaction chamber pressure control method according to claim 1, wherein: Also includes: A terminal valve detector is provided at the terminal pipeline of the mass flow controller to detect the opening time and the opening pressure.

7. The semiconductor reaction chamber pressure control method according to claim 1, wherein: Each gas path corresponds to each process.

8. The semiconductor reaction chamber pressure control method according to claim 1, wherein: The mass flow controller is located at the upstream end of the cavity.

9. The semiconductor reaction chamber pressure control method according to claim 1, wherein: Calculating the initial pressure value of each gas path after the ventilation ends according to the opening time and the opening pressure corresponding to each gas path and the transfer function corresponding to each gas path includes integrating the transfer function between the opening time and the ventilation end time.

10. A computer-readable storage medium having computer instructions stored thereon, wherein the computer instructions, when executed, execute the semiconductor reaction chamber pressure control method according to any one of claims 1 to 9.

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