Electromagnetic shielding fabrication method and package structure

Abstract

The application provides a manufacturing method and a packaging structure of an electromagnetic shield. The manufacturing method comprises the following steps: providing a substrate; the substrate is provided with a first pad and a second pad, and the first pad is grounded; the second pad is used for mounting a first chip; a shielding line is formed on the substrate; the shielding line comprises a first line arc; a first glue body covering the first line arc is formed; the first line arc is disconnected, and the first line arc connected with the first pad is used as the shielding line; the shielding line is located at the periphery of the first chip; the first chip is plastic encapsulated to form a plastic encapsulation body; and a first metal layer electrically connected with the shielding line is formed on the plastic encapsulation body. The manufacturing method is simple in process, is beneficial to improving the reliability and consistency of the shielding line manufacturing, improving the packaging quality, and improving the electromagnetic shielding effect.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor packaging, in particular to a method for manufacturing an electromagnetic shield and a packaging structure. BACKGROUND

[0002] With the rapid development of the semiconductor industry, a system in package (SIP) module structure is widely used in the semiconductor industry. After different functional chips are packaged and stacked, the main advantages are high-density integration, small product size, superior product performance, fast signal transmission frequency, etc. With the application of electronic products in the communication field of high-frequency signals, the product needs to have a partition electromagnetic shield structure to prevent electromagnetic interference phenomena from occurring between various chips and components. The existing partition EMI shielding technology mainly includes forming a metal column by using a wire bonding method to form a shielding structure. The metal column in the prior art usually uses aluminum wire, gold wire, etc. as a soldering wire, which is welded by ultrasonic waves. The ultrasonic waves from the ultrasonic generator generate high-frequency vibrations through the transducer, which are transmitted to the chopper through the amplitude rod. When the chopper contacts the soldering wire and the welded part, under the action of pressure and vibration, the oxide film on the two metal surfaces is destroyed and plastic deformation occurs, causing the two pure metal surfaces to be in close contact, reaching the ion distance combination, and finally forming a firm mechanical connection.

[0003] However, the metal column is a vertical wire, and when the vertical wire is bonded, the top end cannot form friction between the two metal surfaces. The existing technology realizes the bending of the vertical wire by high-frequency vibration and transverse movement of the chopper. Specifically, the wire arc is first bent by transverse movement and downward pressure of the chopper to form a crack, and then the wire arc is pulled off from the crack by upward movement of the chopper to complete the vertical wire bonding. Due to the flexible deformation of the metal, it is difficult to form a vertical structure at the top end of the vertical wire, and the metal column is prone to tilt, resulting in uneven spacing between multiple metal columns, and the spurious signal is easy to pass through, thereby affecting the electromagnetic shielding effect. SUMMARY

[0004] The purpose of the present application is to provide a method for manufacturing an electromagnetic shield and a packaging structure, which has a stable electromagnetic shield structure and good shielding effect.

[0005] In a first aspect, the present application provides a method for manufacturing an electromagnetic shield, comprising:

[0006] providing a substrate; the substrate is provided with a first pad and a second pad, the first pad is grounded; the second pad is used for mounting a first chip;

[0007] forming a shielding wire on the substrate; wherein a first wire arc is formed on the substrate; a first colloid covering the first wire arc is formed; the first wire arc is disconnected, and the first wire arc connected with the first pad is taken as a shielding wire; the shielding wire is located at the periphery of the first chip;

[0008] forming a first chip in the first pad;

[0009] forming a first metal layer on the encapsulation body, the first metal layer being electrically connected with the shielding line.

[0010] In an optional embodiment, the step of forming a shielding line on the substrate comprises:

[0011] attaching a wire bonding part to the substrate, the wire bonding part covering the second pad;

[0012] forming a first wire arc, one end of the first wire arc being connected with the first pad, and the other end being connected with the wire bonding part;

[0013] forming a first glue body covering the first wire arc;

[0014] disconnecting the first wire arc, and removing the first wire arc not connected with the first pad, and taking the first wire arc connected with the first pad as the shielding line.

[0015] In an optional embodiment, the step of forming a shielding line on the substrate further comprises:

[0016] removing the wire bonding part to expose the second pad;

[0017] attaching a first chip to the second pad.

[0018] In an optional embodiment, the step of attaching a wire bonding part to the substrate comprises:

[0019] forming a second metal layer on a side of the wire bonding part away from the substrate;

[0020] In the step of forming a first wire arc, one end of the first wire arc away from the first pad is connected with the second metal layer.

[0021] In an optional embodiment, the substrate further comprises a third pad connected with ground, and the first pad and the third pad are both located at the periphery of the first chip; the step of forming a shielding line on the substrate comprises:

[0022] forming a first wire arc connecting the first pad and the wire bonding part;

[0023] forming a second wire arc connected with the third pad, one end of the second wire arc away from the third pad being located between the third pad and the wire bonding part;

[0024] disconnecting the first wire arc and the second wire arc respectively; the first wire arc connected with the first pad and the second wire arc connected with the third pad together serving as the shielding line.

[0025] In an optional embodiment, the step of disconnecting the first wire arc comprises: grinding the wire-bonding part to remove the first wire arc higher than the wire-bonding part.

[0026] In an optional embodiment, the substrate further comprises a fourth pad, and the method further comprises, before the step of disconnecting the first wire arc:

[0027] The fourth pad is attached with a protective layer, and the thickness of the protective layer is lower than the thickness of the wire-bonding part.

[0028] In an optional embodiment, the step of disconnecting the first wire arc comprises: grinding the wire-bonding part to be flush with the protective layer, and grinding to remove the first wire arc higher than the protective layer.

[0029] In an optional embodiment, the method further comprises, after the step of disconnecting the first wire arc: removing the protective layer.

[0030] In an optional embodiment, the method further comprises, after the step of removing the protective layer: attaching a second chip on the fourth pad.

[0031] In an optional embodiment, the method further comprises, before the step of plastic packaging the first chip to form a plastic package: removing the first adhesive.

[0032] In an optional embodiment, the step of forming a shielding line on the substrate comprises:

[0033] attaching a first chip on the substrate; the first chip and the second pad are electrically connected;

[0034] forming a wire-bonding part on the side of the first chip away from the substrate;

[0035] forming a first wire arc; one end of the first wire arc is connected with the first pad, and the other end is connected with the wire-bonding part;

[0036] forming a first adhesive covering the first wire arc;

[0037] disconnecting the first wire arc, removing the first wire arc not connected with the first pad, and taking the first wire arc connected with the first pad as the shielding line.

[0038] In an optional embodiment, the step of forming a wire-bonding part on the side of the first chip away from the substrate comprises:

[0039] attaching a first cover on the substrate, the first cover covering the first chip; the first cover serving as the wire-bonding part;

[0040] Or, a second glue higher than the first chip is formed on the outer periphery of the first chip, and the first cover plate is attached on the second glue.

[0041] In an optional embodiment, the first cover body is provided with a second metal layer, and the first wire arc connects the first pad and the second metal layer.

[0042] Or, the first cover plate is provided with a third metal layer, and the first wire arc connects the first pad and the third metal layer.

[0043] In an optional embodiment, the step of forming the shielding wire on the substrate further comprises:

[0044] The first cover body is removed, or the first cover plate is removed.

[0045] In an optional embodiment, the step of plastic packaging the first chip to form a plastic package comprises:

[0046] The second glue is removed.

[0047] In a second aspect, the present application provides a method for manufacturing an electromagnetic shield, comprising:

[0048] Providing a plastic package with a shielding wire;

[0049] Providing a substrate with a first chip attached thereon; wherein the substrate is provided with a first pad connected to ground;

[0050] Covering the plastic package to the substrate; wherein the plastic package covers the first chip, the shielding wire is electrically connected to the first pad, and is located on the outer periphery of the first chip;

[0051] Forming a first metal layer electrically connected to the shielding wire on the side of the plastic package away from the substrate.

[0052] In an optional embodiment, the step of providing a plastic package with a shielding wire comprises:

[0053] Providing a first carrier;

[0054] Attaching a wire bonding part on the first carrier;

[0055] Forming a third wire arc connecting the first carrier and the wire bonding part;

[0056] Forming a third glue covering the third wire arc;

[0057] Disconnecting the third wire arc, removing the third wire arc not connected to the first pad, and taking the third wire arc connected to the first pad as the shielding wire;

[0058] forming a prepreg plastic encapsulation body on the first carrier, the prepreg plastic encapsulation body covering the shielded wire and the wire-bonding part;

[0059] removing the first carrier;

[0060] removing the wire-bonding part to form a recess on the plastic encapsulation body.

[0061] In an optional embodiment, in the step of covering the plastic encapsulation body to the substrate, the first chip is accommodated in the recess.

[0062] In an optional embodiment, the step of covering the plastic encapsulation body to the substrate comprises:

[0063] covering the prepreg plastic encapsulation body on the substrate in a film manner;

[0064] pressing the prepreg plastic encapsulation body to solidify the plastic encapsulation body;

[0065] grinding the plastic encapsulation body to expose the shielded wire from the surface of the plastic encapsulation body.

[0066] In an optional embodiment, the first carrier is provided with a second wire-bonding pad, and the step of mounting the wire-bonding part on the first carrier comprises:

[0067] mounting the wire-bonding part on the first carrier;

[0068] mounting a protective layer on the first carrier; the thickness of the protective layer is less than the thickness of the wire-bonding part;

[0069] In the step of forming a third wire arc connecting the first carrier and the wire-bonding part, the third wire arc connects the second wire-bonding pad and the wire-bonding part;

[0070] The step of disconnecting the third wire arc comprises grinding the third wire arc and the wire-bonding part to be flush with the protective layer;

[0071] After the step of removing the first carrier, the step comprises:

[0072] removing the wire-bonding part and the protective layer to form the recess on the plastic encapsulation body.

[0073] In an optional embodiment, in the step of removing the first carrier, the second wire-bonding pad on the first carrier is separated from the first carrier, and the second wire-bonding pad is integrated with the shielded wire.

[0074] In an optional embodiment, the step of providing the plastic encapsulation body with the shielded wire comprises:

[0075] providing a second carrier; the second carrier has a protruding part;

[0076] forming a fourth line arc connecting the second carrier and the protrusion on the second carrier, and breaking the fourth line arc to form the shielding line;

[0077] forming a semi-cured plastic encapsulation covering the shielding line and the protrusion on the second carrier;

[0078] removing the second carrier to form a groove on the plastic encapsulation, the groove corresponding to the position of the protrusion.

[0079] In an optional embodiment, the protrusion comprises a first protrusion and a second protrusion, the height of the first protrusion being higher than the height of the second protrusion.

[0080] In the step of forming a shielding line on the second carrier, the step comprises:

[0081] forming a fourth line arc connecting the second carrier and the first protrusion;

[0082] breaking the fourth line arc, and grinding the fourth line arc and the first protrusion to be flush with the second protrusion to form the shielding line.

[0083] In the step of removing the second carrier, in an optional embodiment, a third wire-bonding pad on the second carrier is separated from the second carrier, and the third wire-bonding pad is integrated with the shielding line.

[0084] In a third aspect, the present application provides a packaging structure made by the electromagnetic shielding manufacturing method as described in any of the preceding embodiments.

[0085] Optionally, the packaging structure comprises:

[0086] a substrate, the substrate being provided with a shielding line;

[0087] a first device and a second device being attached to the substrate, the first device and the second device being electrically connected to the substrate respectively, and the shielding line being arranged between the first device and the second device;

[0088] a plastic encapsulation, the plastic encapsulation being connected to the substrate and covering the first device and the second device;

[0089] a first metal layer, the first metal layer being arranged on the surface of the plastic encapsulation, the first metal layer being connected to the end of the shielding line away from the substrate, and at least one of the first metal layer and the shielding line being grounded.

[0090] Optionally, the first metal layer is arranged on a part of surface of the plastic package; a projection of the first metal layer on the substrate covers the first device; the projection of the first metal layer on the substrate is misaligned with the second device.

[0091] The electromagnetic shielding manufacturing method and the packaging structure provided by the embodiment of the application can reduce the design of the number of wire bonding pads on the substrate by connecting the first line arc on the substrate and the wire bonding part when forming the shielding line. The first line arc is covered by the first adhesive, which is beneficial to improving the reliability and stability of the shielding line, improving the electromagnetic shielding effect, and improving the packaging quality when the first line arc is disconnected to form the shielding line. BRIEF DESCRIPTION OF DRAWINGS

[0092] In order to more clearly illustrate the technical solutions in the embodiments of the application or the prior art, the following will briefly introduce the drawings needed to be used in the description of the embodiments or the prior art. Obviously, the drawings described below are some embodiments of the application, and for those skilled in the art, other drawings can also be obtained without creative labor based on these drawings.

[0093] Figure 1 Process schematic diagram of the first method of the electromagnetic shielding manufacturing method provided by the embodiment of the application;

[0094] Figure 2 Process schematic diagram of the first method of the electromagnetic shielding manufacturing method provided by the embodiment of the application; Figure 1 Height schematic diagram of the wire bonding part and the protective layer in the middle;

[0095] Figure 3 Structure schematic diagram of the second line arc in the electromagnetic shielding manufacturing method provided by the embodiment of the application;

[0096] Figure 4 Distribution structure schematic diagram of the first line arc and the second line arc on the substrate in the electromagnetic shielding manufacturing method provided by the embodiment of the application;

[0097] Figure 5 Process schematic diagram of the first method of the electromagnetic shielding manufacturing method provided by the embodiment of the application;

[0098] Figure 6 Process schematic diagram of the first method of the electromagnetic shielding manufacturing method provided by the embodiment of the application;

[0099] Figure 7 Schematic diagram of the first wire bonding part structure in the electromagnetic shielding manufacturing method provided by the embodiment of the application;

[0100] Figure 8 Packaging process schematic diagram of the second wire bonding part structure in the electromagnetic shielding manufacturing method provided by the embodiment of the application;

[0101] Figure 9 Process flow diagram of the second method of the electromagnetic shielding manufacturing method provided by the embodiment of the present application;

[0102] Figure 10 Process flow diagram of the second method of the electromagnetic shielding manufacturing method provided by the embodiment of the present application;

[0103] Figure 11 Process flow diagram of the second method of the electromagnetic shielding manufacturing method provided by the embodiment of the present application;

[0104] Figure 12 Process flow diagram of the third method of the electromagnetic shielding manufacturing method provided by the embodiment of the present application;

[0105] Figure 13 Process flow diagram of the third method of the electromagnetic shielding manufacturing method provided by the embodiment of the present application;

[0106] Figure 14 Schematic diagram of the first packaging structure provided by the embodiment of the present application;

[0107] Figure 15 Schematic diagram of the second packaging structure provided by the embodiment of the present application;

[0108] Figure 16 Schematic diagram of the third packaging structure provided by the embodiment of the present application.

[0109] Icon: 100 - packaging structure; 110 - substrate; 111 - first pad; 112 - second pad; 113 - third pad; 114 - fourth pad; 115 - ground wiring; 121 - first chip; 122 - second chip; 123 - underfill adhesive; 130 - shielding line; 131 - first line arc; 132 - first adhesive; 133 - second line arc; 140 - wire bonding part; 141 - second metal layer; 142 - bonding adhesive; 143 - protective layer; 144 - first cover; 145 - second adhesive; 146 - first cover plate; 1461 - third metal layer; 147 - protective cover; 150 - plastic package; 160 - first metal layer; 210 - first carrier; 211 - second wire bonding pad; 220 - third line arc; 221 - third adhesive; 151 - first plastic package; 154 - groove; 230 - second carrier; 231 - third wire bonding pad; 232 - first protrusion; 233 - second protrusion; 234 - fourth wire bonding pad; 240 - fourth line arc; 241 - fourth adhesive; 152 - second plastic package. DETAILED DESCRIPTION

[0110] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some but not all of the embodiments of the present application. The components of the embodiments of the present application described and shown in the drawings can be arranged and designed in various different configurations.

[0111] Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed application, but only represents selected embodiments of the application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work are within the scope of protection of the present application.

[0112] It should be noted that: similar reference numerals and letters represent similar items in the following drawings, therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0113] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship when the product of the present application is usually placed, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", "third" and the like are only used for differentiation and cannot be understood as indicating or implying relative importance.

[0114] In addition, the terms "horizontal", "vertical", "overhanging" and the like do not mean that the components must be absolutely horizontal or overhanging, but can be slightly inclined. For example, "horizontal" only means that its direction is more horizontal relative to "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0115] In the description of the present application, it should also be noted that, unless otherwise explicitly specified and limited, the terms "arrangement", "installation", "connection", "connection" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the communication inside two elements. For those of ordinary skill in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0116] Some embodiments of the present application will be described in detail with reference to the drawings. The following embodiments and features of the embodiments described below can be combined with each other without conflict.

[0117] The electromagnetic shielding manufacturing method proposed by the embodiments of the present application is beneficial to improve the structural stability and distribution uniformity of the shielding line, and improve the electromagnetic shielding effect. The manufacturing method is roughly as follows:

[0118] In combination with Figure 1 , a substrate 110 is provided. The substrate 110 can be a substrate, a silicon substrate, a PCB board, a MIS substrate or a ceramic substrate, etc. The surface of the substrate 110 is divided into a shielding separation area. The substrate 110 is provided with a first pad 111 and a second pad 112. The first pad 111 is grounded, and the first pad 111 is arranged in the shielding separation area and is used to form a shielding line 130. The second pad 112 is used to mount a first chip 121. The first pad 111 is located at the periphery of the second pad 112 to shorten the wire bonding distance.

[0119] The shielding line 130 is formed on the substrate 110 before or after the step of mounting the first chip 121 on the second pad 112.

[0120] Optionally, if the shielding line 130 is formed before the first chip 121 is mounted, the method is roughly as follows:

[0121] A first line arc 131 is formed on the substrate 110; a first glue 132 covering the first line arc 131 is formed; the first line arc 131 connected with the first pad 111 is disconnected, and the first line arc 131 is taken as the shielding line 130; and the shielding line 130 is located at the periphery of the first chip 121.

[0122] Optionally, a wire bonding part 140 is mounted on the substrate 110. The wire bonding part 140 covers the second pad 112. The first pad 111 is located at the periphery of the wire bonding part 140. The wire bonding part 140 can be a dummy chip, and the dummy chip can be selected from a silicon substrate 110, a germanium substrate 110, a metal material or a high polymer material, etc. The wire bonding part 140 can also be a support pad made of a metal material or a non-metal material. In the direction perpendicular to the substrate 110, the thickness of the wire bonding part 140 is greater than the thickness of the first chip 121.

[0123] The first wire arc 131 is formed. One end of the first wire arc 131 is connected to the first pad 111, and the other end is connected to the wire bonding portion 140. Optionally, the first wire arc 131 is connected to the surface of the wire bonding portion 140 away from the substrate 110. The first wire arc 131 can be formed by wire bonding. It can be understood that the first wire arc 131 is formed by wire bonding, and the wire bonding is performed on the metal surface, so that the wire bonding quality is better and the structure is more stable. If the wire bonding portion 140 is made of a metal material, the first wire arc 131 can be directly formed on the surface of the wire bonding portion 140. If the wire bonding portion 140 is made of a non-metal material, a second metal layer 141 needs to be formed on the surface of the wire bonding portion 140 away from the substrate 110, and then wire bonding is performed. In this way, the two ends of the first wire arc 131 are connected to the first pad 111 and the second metal layer 141, respectively. The second metal layer 141 can cover the entire surface of the wire bonding portion 140 away from the substrate 110, or can be dispersedly arranged on the surface of the wire bonding portion 140 away from the substrate 110 according to the wire bonding position. If the dispersed arrangement is adopted, the shape, size and number thereof are not specifically limited, as long as the wire bonding process can be met. In the embodiment, the wire bonding portion 140 is a dummy chip. The second metal layer 141 is a first wire bonding pad. That is, the first wire bonding pad is arranged on the dummy chip, and the two ends of the first wire arc 131 are connected to the first pad 111 and the first wire bonding pad, respectively. The dummy chip refers to a semiconductor element or structure without function.

[0124] When wire bonding is performed, vertical wire bonding can be first formed on the first pad 111, and then the wire arc is connected to the first wire bonding pad of the dummy chip by pulling and bending, so as to form the first wire arc 131.

[0125] Optionally, the dummy chip is bonded to the substrate 110 by the bonding glue 142. The bonding glue 142 can be a thermoplastic glue. The bonding glue 142 and the dummy chip cover the second pad 112, and protect the second pad 112. Subsequently, the dummy chip and the substrate 110 can be separated by heating or light reaction, so as to achieve the purpose of removing the dummy chip.

[0126] A first colloid 132 is formed to cover the first arc 131. A dispensing process is used to protect the first arc 131 using the first colloid 132. The first colloid 132 is a soluble colloid that can be decomposed and removed using chemical agents. The material of the first colloid 132 can be a silicone-containing acrylic resin, which can be removed later using sulfuric acid. Alternatively, the first colloid 132 can be a photosensitive colloid, such as polyvinyl alcohol laurate, which can be decomposed and removed later using a light-induced cross-linking reaction. Of course, the material of the first colloid 132 is not limited, as long as it is a decomposable material, facilitating subsequent removal. By forming the first colloid 132, the structural strength of the connection between the first arc 131 and the first pad 111 can be strengthened, improving the support for the first arc 131 and ensuring that the connection between the first arc 131 and the first pad 111 maintains a vertical structure. This ensures that the subsequently formed shielding line 130 is not tilted in the direction perpendicular to the substrate 110, maintains uniform spacing between multiple shielding lines 130, prevents stray waves from passing through, and provides better electromagnetic shielding.

[0127] The first arc 131 is disconnected, and the first arc 131 not connected to the first pad 111 is removed. The first arc 131 connected to the first pad 111 is used as the shielding line 130. In this embodiment, a grinding process is used to grind the surface of the bonding portion 140 away from the substrate 110, removing the top of the first arc 131 and the first arc 131 higher than the bonding portion 140. This process also grinds away the bonding pads of the bonding portion 140, leaving only the first arc 131 connected to the first pad 111 as the shielding line 130. This ensures that the shielding line 130 is not tilted and that multiple shielding lines 130 are at the same height. It is understood that the first colloid 132 can also improve the support of the first arc 131 during the grinding process, reducing the risk of tilting or breakage in non-grinding areas due to grinding stress. Non-grinding areas include, for example, the low-lying area near the first pad 111.

[0128] Please combine Figure 2Optionally, the substrate 110 further comprises a fourth pad 114 for mounting a second chip 122. In this way, the first chip 121 and the second chip 122 can be designed in a partitioned manner. In order to control the grinding thickness, before the step of breaking the first wire arc 131, a protective layer 143 is further mounted on the fourth pad 114, and the thickness of the protective layer 143 is lower than the thickness of the wire bonding portion 140. Assuming that the protruding height of the wire bonding portion 140 relative to the substrate 110 is H1, the protruding height of the protective layer 143 relative to the substrate 110 is H2, and the height difference between the protective layer 143 and the wire bonding portion 140 is H3. H3 = H1 - H2. When grinding, the side surface of the protective layer 143 away from the substrate 110 is used as a reference datum to control the grinding thickness to be H3, that is, in the grinding process, the wire bonding portion 140 is ground to be flush with the protective layer 143, and the first wire arc 131 higher than the protective layer 143 is removed by grinding. In this way, the grinding precision can be effectively controlled, the height consistency and controllability of all the shielding lines 130 can be ensured, the electromagnetic shielding effect is prevented from being weakened due to excessive grinding of the shielding lines 130, and the end surface of the shielding line 130 is used as a reference when the plastic encapsulation body 150 is subsequently ground, so that the shielding line 130 is prevented from being excessively low and from being damaged or cracked due to the first chip 121.

[0129] Please refer to Figure 3 and Figure 4 Optionally, the substrate 110 further comprises a third pad 113 connected to the ground, and the first pad 111 and the third pad 113 are arranged on the periphery of the first chip 121. The third pad 113 and the first pad 111 can be arranged adjacent to each other, such as staggered, side by side or intercalated. In this way, a second wire arc 133 connected to the third pad 113 can be formed. One end of the second wire arc 133 away from the third pad 113 is located between the third pad 113 and the wire bonding portion 140. The wire bonding sequence of the first wire arc 131 and the second wire arc 133 is not limited. The second wire arc 133 can improve the bonding of the shielding line 130 and the first adhesive 132, and improve the bonding of the shielding line 130 and the plastic encapsulation body 150, prevent the first wire arc 131 from generating grinding mechanical stress between the dummy chip, and cause the first pad 111 at the bottom of the shielding line 130 to crack. In addition, the second wire arc 133 can improve the distribution density of the shielding line 130 and improve the electromagnetic shielding performance. In addition, the arrangement of the second wire arc 133 can reduce the number of wire bonding pads on the wire bonding portion 140, and save the effective space of the first chip 121.

[0130] It should be noted that if the second wire arc 133 is formed, the first colloid 132 covers the first wire arc 131 and the second wire arc 133 when the first colloid 132 is formed. When the first wire arc 131 is ground, the second wire arc 133 is also ground. After grinding, the first wire arc 131 connected with the first pad 111 and the second wire arc 133 connected with the third pad 113 together serve as the shielding wire 130.

[0131] In combination Figure 5 and Figure 6 After the shielding wire 130 is formed, the wire bonding part 140 is removed to expose the second pad 112. The wire bonding part 140 and the substrate 110 can be separated by debonding, so that the wire bonding part 140 is removed. The debonding method is not limited, which can be ultraviolet irradiation or heating according to the characteristics of the selected bonding glue 142. Alternatively, if the protective layer 143 is attached in the foregoing step, the protective layer 143 can be removed together when the wire bonding part 140 is removed, so that the fourth pad 114 is exposed.

[0132] The first chip 121 is attached to the second pad 112. The shielding wire 130 is located at the periphery of the first chip 121. Alternatively, the second chip 122 is attached to the fourth pad 114. The first chip 121 can be a radio frequency chip or a filter chip, etc. The second chip 122 can be a power amplifier chip, etc. Of course, in other embodiments, the first chip 121 and the second chip 122 can also be other types of chips or components, and the chip type is not limited. The chip attachment method is not limited, which can be a normal mounting method or a flip chip mounting method. In this embodiment, the first chip 121 is soldered to the second pad 112, and the second chip 122 is soldered to the fourth pad, so as to realize the electrical connection between the chip and the substrate 110. Alternatively, the bottom filling glue 123 is formed at the bottom of the first chip 121 and the second chip 122. The bottom filling glue 123 protects the soldering structure of the chip and the substrate 110, and also plays a role of reinforcement, heat dissipation, etc.

[0133] The first chip 121 is plastic encapsulated to form a plastic encapsulation 150. Alternatively, the plastic encapsulation 150 is formed on the substrate 110 by a plastic encapsulation process. The plastic encapsulation 150 protects the first chip 121, the second chip 122 and the shielding wire 130, etc. The material of the plastic encapsulation 150 can be high thermal conductive plastic encapsulation material, such as adding high thermal conductive material in epoxy-based resin or silicone-based resin. The high thermal conductive material includes but is not limited to alumina thermal conductive powder and nano-alumina, etc. to realize high thermal conductivity of the product.

[0134] The back surface of the plastic package 150 is ground to make the surface of the plastic package 150 and the end surface of the shielding line 130 flush, i.e. the shielding line 130 is exposed from the surface of the plastic package 150. Optionally, the product is cut into single pieces by cutting process.

[0135] A first metal layer 160 is formed on the plastic package 150 and electrically connected with the shielding line 130. Optionally, the first metal layer 160 is formed by metal sputtering on the upper surface and the peripheral surface of the plastic package 150 of the single product. The first metal layer 160 is connected with the shielding line 130 to realize the function of partition electromagnetic shielding.

[0136] It can be understood that the first adhesive 132 can be retained in the product structure or removed before plastic packaging. If the first adhesive 132 needs to be removed, the first adhesive 132 around the shielding line 130 is removed by using a chemical agent, and the first adhesive 132 is decomposed by using the chemical agent. Optionally, the first adhesive 132 is removed before the step of removing the wire bonding part 140 and the protective layer 143, so that the wire bonding part 140 and the protective layer 143 can protect the second pad 112 and the fourth pad 114, avoid the second pad 112 and the fourth pad 114 from being contaminated or bitten by the chemical agent, and improve the subsequent conductivity and solderability of the second pad 112 and the fourth pad 114.

[0137] In the embodiment, the wire bonding pad is formed on the wire bonding part 140, which can reduce the number of pads designed on the substrate 110, improve the integration and utilization of the substrate 110, improve the design space, and shorten the wire bonding distance.

[0138] In some embodiments, the shielding line 130 can be formed after the first chip 121 is attached. The preparation method is as follows:

[0139] In combination with Figure 7 and Figure 8 , the first chip 121 is attached on the substrate 110. Optionally, the first chip 121 is attached on the second pad 112. The wire bonding part 140 is formed on the side of the first chip 121 away from the substrate 110.

[0140] Optionally, the wire bonding part 140 can be a first cover 144, the first cover 144 is attached on the substrate 110 by the bonding adhesive 142 and covers the first chip 121. The first cover 144 can be a metal material or a non-metal material. Optionally, the first cover 144 is provided with a second metal layer 141. The first wire arc 131 is formed by wire bonding between the first pad 111 and the second metal layer 141 by wire bonding process. The second metal layer 141 can be a pad structure or a metal layer covering the entire upper surface of the first cover 144. In some embodiments, if the first cover 144 is a metal material, the second metal layer 141 can also be omitted.

[0141] Alternatively, the wire-bonding portion 140 can include a second adhesive 145 surrounding the outer periphery of the first chip 121 and a first cover plate 146 attached to the second adhesive 145, the first cover plate 146 can be made of metal or non-metal material, and the first cover plate 146 is provided with a third metal layer 1461. The third metal layer 1461 can be a pad structure or a metal layer covering the entire upper surface of the first cover plate 146. The second adhesive 145 is formed around the outer periphery of the first chip 121 and is higher than the first chip 121, and the second adhesive 145 is similar to the barrier wall formed around the first chip 121. The cover plate with the third metal layer 1461 is attached to the side of the second adhesive 145 away from the substrate 110, and the wire-bonding process is used to bond a wire between the first pad 111 and the third metal layer 1461 to form the first wire loop 131. Of course, in some embodiments, if the first cover plate 146 is made of metal, the third metal layer 1461 can be omitted.

[0142] Optionally, the fourth pad 114 is attached with the second chip 122. A protective cover 147 is formed on the second chip 122, covering the second chip 122 and protecting the second chip 122. The surface of the protective cover 147 away from the substrate 110 is lower than the surface of the wire-bonding portion 140 away from the substrate 110, and the height difference between the two can be used as the subsequent grinding thickness to control the grinding accuracy and avoid excessive grinding that damages the first chip 121 and the second chip 122. It can be understood that the protective cover 147 includes a side wall and a cover plate, which can be integrally formed or connected separately, and the cover plate and the side wall can be made of the same material or different materials. The protective cover 147 is attached to the substrate 110 by the bonding adhesive 142. The protective cover 147 can be removed by debonding in the subsequent process.

[0143] Optionally, the protective cover 147 includes an adhesive surrounding the periphery of the second chip 122 and a second cover plate attached to the adhesive. When removing the protective cover 147, only the second cover plate can be removed, or the second cover plate and the adhesive can be removed together, which is not limited here.

[0144] In some embodiments, the protective cover 147 can be entirely an adhesive, covering the second chip 122 and protecting the second chip 122.

[0145] Optionally, when attaching the first chip 121 and the second chip 122, a bottom filling adhesive 123 is formed at the bottom of the first chip 121 and the second chip 122, respectively. The bottom filling adhesive 123 can include epoxy resin, organosiloxane copolymer, curing agent, and additive.

[0146] After the first wire arc 131 is formed, a first glue body 132 is formed to cover the first wire arc 131 by using a dispensing process. After the first glue body 132 is solidified, the wire bonding part 140 and the first wire arc 131 are ground to form the shielding wire 130. After the grinding, the surface of the first glue body 132 and the end surface of the shielding wire 130 are flush.

[0147] Optionally, the first glue body 132, the wire bonding part 140 and the protective cover 147 are removed. In this embodiment, the first glue body 132 is removed by using a chemical agent to decompose the first glue body 132. At this time, the wire bonding part 140 and the protective cover 147 can protect the first chip 121 and the second chip 122 from being contaminated by the chemical agent.

[0148] Of course, in other embodiments, the first glue body 132 can also be retained, and the second glue body 145 in the wire bonding part 140 can also be retained, which is not specifically limited here.

[0149] Then, a plastic package 150 is formed on the substrate 110, the plastic package 150 is ground, the product is cut into a single product, the first metal layer 160 is sputtered on the surface of the plastic package 150, the first metal layer 160 is electrically connected to the shielding wire 130, and the manufacturing process is completed. In this preparation method, the first chip 121 and the second chip 122 are attached to the substrate 110 first, and then the wire bonding part 140 and the protective cover 147 are formed. After the wire bonding part 140 and the protective cover 147 are removed, there is no need to attach the chip again, which is beneficial to improving the packaging efficiency.

[0150] It should be noted that if the wire bonding part 140 includes the second glue body 145 and the cover plate attached to the second glue body 145, when the wire bonding part 140 is removed, only the cover plate can be removed, and the second glue body 145 can be retained. In other words, the second glue body 145 can be removed or retained.

[0151] Optionally, the shielding wire 130 can also be formed on the substrate 110 by bonding. One preparation method is as follows:

[0152] In combination Figures 9 to 11 , a first carrier 210 is provided. The first carrier 210 can be metal, glass or other materials. A second wire bonding pad 211 is formed on the first carrier 210. The wire bonding part 140 and the protective layer 143 are attached to the first carrier 210, and the second wire bonding pad 211 is located at the periphery of the wire bonding part 140. The thickness of the protective layer 143 is lower than the thickness of the wire bonding part 140, and the height difference between the two is used to control the subsequent grinding thickness.

[0153] The third wire arc 220 is formed between the first carrier 210 and the wire bonding portion 140 by a wire bonding process. The two ends of the third wire arc 220 are connected to the second wire bonding pad 211 and the wire bonding portion 140 respectively. The third adhesive 221 is formed to cover the third wire arc 220. After the third adhesive 221 is solidified, the wire bonding portion 140 and the third wire arc 220 are ground to form the shielding wire 130. Optionally, the third wire arc 220 and the wire bonding portion 140 are ground to be flush with the protective layer 143.

[0154] Optionally, the third adhesive 221 can be removed or retained. The first plastic package 151 is formed on the first carrier 210. The first plastic package 151 covers the shielding wire 130, the wire bonding portion 140 and the protective layer 143. It should be noted that the first plastic package 151 is in a semi-solid state and has a film structure in this step. The semi-solid temperature of the first plastic package 151 is about 50-100°C. The first carrier 210 is removed by a debonding method. When the first carrier 210 is removed, the second wire bonding pad 211 on the first carrier 210 is separated from the first carrier 210 and is integrated with the shielding wire 130.

[0155] The wire bonding portion 140 and the protective layer 143 are removed. Optionally, the wire bonding portion 140 and the protective layer 143 are removed by etching. Thus, a groove 154 is formed on the first plastic package 151 at the position where the wire bonding portion 140 and the protective layer 143 are removed. Optionally, the first plastic package 151 is cleaned to remove residues inside the groove 154.

[0156] It can be understood that in some embodiments, a second wire arc 133 can also be formed between the second wire bonding pad 211 and the wire bonding portion 140. That is, one end of the second wire arc 133 is connected to the second wire bonding pad 211, and the other end is suspended between the second wire bonding pad 211 and the wire bonding portion 140. When the third wire arc 220 is ground, the second wire arc 133 is also ground. After grinding, the third wire arc 220 and the second wire arc 133 retained on the first carrier 210 together serve as the shielding wire 130. The design of the second wire arc 133 can further improve the structural strength of the semi-solid first plastic package 151 and improve the bonding of the shielding wire 130 and the first plastic package 151.

[0157] A substrate 110 is provided, and a first chip 121 and a second chip 122 are respectively attached on the substrate 110. A first plastic package 151 in a semi-cured state including a shielding line 130 is then covered on the substrate 110. The first chip 121 and the second chip 122 are respectively located in a groove 154, the shielding line 130 is electrically connected with a ground pad on the substrate 110, and the shielding line 130 is located at the periphery of the first chip 121. The ground pad on the substrate 110 includes but is not limited to a first pad 111 and a second pad 112. Optionally, the semi-cured first plastic package 151 can be covered on the substrate 110 by vacuum coating. The first plastic package 151 can be made of a thermoplastic material.

[0158] Optionally, the first plastic package 151 is subjected to overmolding. The overmolding is performed by an injection molding overmolding machine, and the overmolding parameters of the overmolding machine include a pressure of 50-450 MPa and a temperature of 180-550 degrees. The overmolding conditions can soften the thermoplastic material of the first plastic package 151, and the softened first plastic package 151 can fill into the bottom of the first chip 121 and the second chip 122 and completely contact and cover the first chip 121 and the second chip 122, so that the groove 154 formed by removing the wire bonding part 140 and the protective layer 143 in the previous step is filled and solidified. After overmolding, the thickness of the first plastic package 151 decreases, and the first plastic package 151 reaches a completely cured state. Then, the first plastic package 151 is ground, so that the end surface of the shielding line 130 away from the substrate 110 can be exposed from the surface of the first plastic package 151. In this method, the overmolding process is used to realize the welding between the second wire bonding pad 211 on the shielding line 130 and the ground pad of the substrate 110 under high temperature and high pressure, and the welding is reliable. Optionally, in the overmolding welding process, a flux can be used to improve the welding reliability, thereby forming an intermetallic compound (IMC) layer.

[0159] In this embodiment, the shielding line 130 can improve the structural strength of the first plastic package 151 in a semi-cured state, which is beneficial to control the overmolding height and better control the filling amount of the first plastic package 151 to the gap around the chip, thereby avoiding problems such as cavities at the bottom and around the chip. Moreover, this method has higher process efficiency and can avoid problems such as plastic package mold flow bending the wire arc in the traditional plastic package process, thereby improving the electromagnetic shielding effect.

[0160] Then, the product is cut and separated into single products, and surface sputtering is performed to form a first metal layer 160 electrically connected with the shielding line 130, thereby completing the packaging process.

[0161] In some other embodiments, the packaging can also be performed by the following methods:

[0162] In combination Figures 12 to 13The second carrier 230 is provided, wherein the second carrier 230 has a first protrusion 232 and a second protrusion 233. A third wire-bonding pad 231 is formed on the second carrier 230. The third wire-bonding pad 231 is located at the periphery of the first protrusion 232. Optionally, the height of the second protrusion 233 is lower than the height of the first protrusion 232. The height difference is used to control the subsequent grinding thickness. Optionally, a fourth wire-bonding pad 234 is provided on the first protrusion 232.

[0163] A wire-bonding process is used to wire-bond between the third wire-bonding pad 231 and the first protrusion 232, forming a fourth wire arc 240 connecting the third wire-bonding pad 231 and the fourth wire-bonding pad 234. The fourth wire arc 240 is covered with a fourth colloid 241. The first protrusion 232 and the fourth wire arc 240 are ground to be flush with the second protrusion 233, forming a shielding wire 130. The surface of the second protrusion 233 is used as a grinding depth reference surface to ensure the uniform height of the shielding wire 130.

[0164] Optionally, the fourth colloid 241 can be removed or retained. A second plastic package 152 is formed on the second carrier 230. The second plastic package 152 covers the shielding wire 130, the first protrusion 232 and the second protrusion 233. It should be noted that the second plastic package 152 in this step is a semi-cured film structure. The second carrier 230 is removed by a debonding method. Thus, the second plastic package 152 forms a groove 154 at the positions corresponding to the first protrusion 232 and the second protrusion 233. Optionally, the second plastic package 152 is cleaned to remove residues inside the groove 154.

[0165] The second plastic package 152 is then covered on the substrate 110 with the first chip 121 and the second chip 122 attached thereon by a vacuum film covering method. The first chip 121 and the second chip 122 are respectively located in the groove 154 of the second plastic package 152, and the third wire-bonding pad 231 on the shielding wire 130 is electrically connected to the ground pad on the substrate 110. The second plastic package 152 is then over-pressed, so that the chip bottom gap and the groove 154 are filled with the second plastic package 152, and the second plastic package 152 reaches a fully cured state. The thickness of the second plastic package 152 is reduced by grinding, so that the end of the shielding wire 130 away from the substrate 110 is exposed from the surface of the second plastic package 152. Then, cutting and surface metal sputtering are performed to complete the packaging process.

[0166] In combination Figure 14The packaging structure 100 includes a substrate 110, a first device, a second device, a plastic package 150, a shielding wire 130, and a first metal layer 160. In the embodiment, the first device is a first chip 121, and the second device is a second chip 122. The first chip 121 and the second chip 122 are respectively attached to the substrate 110 and electrically connected to the substrate 110. The substrate 110 is provided with a first land 111 connected to the ground, and the first land 111 is electrically connected to the shielding wire 130. The shielding wire 130 is located between the first device and the second device, and is used to realize the partition signal isolation of the first device and the second device. The first device and the second device include but are not limited to chips and components, and the like. That is, the shielding wire 130 can realize the electromagnetic interference between the chips, and can also be used to isolate the interference between the chips and the components, or to isolate the interference between the components, which is not limited here. If the first device and the second device are chips, they are not limited to flip chips or inverted chips, and both can be applicable.

[0167] Optionally, the shielding wire 130 is located between the first chip 121 and the second chip 122. The substrate 110 is provided with a side of the chip to form the plastic package 150, and the surface of the plastic package 150 is provided with the first metal layer 160. One end of the shielding wire 130 away from the substrate 110 is electrically connected to the first metal layer 160, and plays a role of partition shielding of the first chip 121 and the second chip 122. In some embodiments, the shielding wire 130 can not only be arranged between the first chip 121 and the second chip 122, but also be arranged around the periphery of the first chip 121. Or arranged on any one or more of the four sides of the first chip 121.

[0168] Optionally, the first metal layer 160 can be arranged on the entire surface of the plastic package 150, including the side surface and the upper surface. That is, the first metal layer 160 completely covers the surface of the plastic package 150. Of course, according to the actual design of the shielding area, the first metal layer 160 can cover part of the surface of the plastic package 150, such as Figure 15 As shown in FIG. 7, the first metal layer 160 does not cover the attachment area of the second chip 122. If the attachment area of the first chip 121 needs to be shielded, the projection of the first metal layer 160 on the substrate 110 covers the first chip 121; and the projection of the first metal layer 160 on the substrate 110 is arranged in a staggered manner with the second chip 122.

[0169] Optionally, the bottom of the first chip 121 and the bottom of the second chip 122 are respectively provided with a bottom filling glue 123. The substrate 110 is provided with a ground wiring 115, and the ground land on the surface of the substrate 110 is electrically connected to the ground wiring 115.

[0170] In combination with Figure 16Optionally, if the first glue 132 is not removed in the manufacturing method, the packaging structure 100 further comprises the first glue 132, the first glue 132 covers the shielding wire 130, and the support and stability of the shielding wire 130 are improved.

[0171] Optionally, if the second glue 145 is not removed in the manufacturing method, the packaging structure 100 further comprises the second glue 145, the second glue 145 is arranged around the periphery of the first chip 121, the support and stability of the structure are improved, and the heat dissipation performance is also improved.

[0172] It can be understood that the shielding wire 130 is arranged around the periphery of the first chip 121. The height of the shielding wire 130 is slightly higher than the height of the first chip 121. If the first chip 121 is a quadrilateral, the shielding wire 130 can be arranged on any one side, two sides, three sides or four sides of the four sides of the periphery of the first chip 121. The shielding wire 130 around the periphery of the first chip 121 can be single, and the distribution of a plurality of shielding wires 130 around the periphery of the first chip 121 can be substantially in the shape of a straight line, an L shape, a C shape, a U shape, a V shape, a mouth shape or other shapes. The distribution of the plurality of shielding wires 130 on each side of the first chip 121 can be a straight line, an oblique line, a broken line, a wavy line, an arc line or other arbitrary curves, which are not limited here.

[0173] The electromagnetic shielding manufacturing method and the packaging structure 100 provided by the embodiments of the present application can reduce the design of the number of wire bonding pads on the substrate 110. By covering the first wire arc 131 with the first glue 132, the reliability and stability of the shielding wire 130 are improved when the shielding wire 130 is formed by disconnecting the first wire arc 131, the electromagnetic shielding effect is improved, and the packaging quality is improved. The semi-cured state plastic package 150 with the shielding wire 130 is pressed onto the substrate 110, the process is simplified, and the packaging efficiency and packaging quality are improved.

[0174] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part or all of the technical features; any modification, equivalent replacement, improvement, etc. should be included in the protection scope of the present application.

Claims

1. A method of making an electromagnetic shield, the method comprising: The application relates to a substrate and a method for manufacturing the substrate. The substrate is provided with a first pad and a second pad, the first pad is grounded, and the second pad is used for mounting a first chip. A shielding line is formed on the substrate; wherein a first line arc is formed on the substrate; a first glue body covering the first line arc is formed; the first line arc is disconnected, and the first line arc connected with the first pad is used as the shielding line; and the shielding line is located at the periphery of the first chip. The first chip is plastic encapsulated to form a plastic encapsulation body. A first metal layer electrically connected with the shielding line is formed on the plastic encapsulation body. The step of forming the shielding line on the substrate comprises the following steps:

2. The electromagnetic shield manufacturing method according to claim 1, wherein A wire bump is mounted on the substrate; the wire bump covers the second pad; A first line arc is formed; one end of the first line arc is connected with the first pad, and the other end is connected with the wire bump; The first glue body covering the first line arc is formed; The first line arc is disconnected, and the first line arc not connected with the first pad is removed, and the first line arc connected with the first pad is used as the shielding line. The step of forming the shielding line on the substrate further comprises the following steps:

3. The electromagnetic shield manufacturing method according to claim 2, wherein The wire bump is removed to expose the second pad; The first chip is mounted on the second pad. The step of mounting the wire bump on the substrate comprises the following steps:

4. The electromagnetic shield manufacturing method according to claim 2, wherein A second metal layer is formed on the side of the wire bump away from the substrate; In the step of forming the first line arc, one end of the first line arc away from the first pad is connected with the second metal layer. The substrate further comprises a third pad grounded, and the first pad and the third pad are jointly arranged at the periphery of the first chip; 5. The electromagnetic shield manufacturing method according to claim 2, wherein The step of forming the shielding line on the substrate comprises the following steps: A first line arc connecting the first pad and the wire bump is formed; A second line arc connected with the third pad is formed; one end of the second line arc away from the third pad is located between the third pad and the wire bump; The first line arc and the second line arc are disconnected respectively; the first line arc connected with the first pad and the second line arc connected with the third pad are jointly used as the shielding line. In the step of disconnecting the first line arc, the wire bump is ground, and the first line arc higher than the wire bump is removed by grinding.

6. The electromagnetic shield manufacturing method according to claim 2, wherein The substrate is further provided with a fourth pad, and before the step of disconnecting the first line arc, the following step is further included:

7. The electromagnetic shield manufacturing method according to claim 6, wherein A protective layer is mounted on the fourth pad, and the thickness of the protective layer is lower than the thickness of the wire bump. In the step of disconnecting the first line arc, the wire bump is ground to be flush with the protective layer, and the first line arc higher than the protective layer is removed by grinding.

8. The electromagnetic shield manufacturing method according to claim 7, wherein After the step of disconnecting the first line arc, the following step is further included:

9. The electromagnetic shield manufacturing method according to claim 7, wherein The protective layer is removed.

10. The electromagnetic shield manufacturing method according to claim 9, wherein After the step of removing the protective layer, the following step is further included:

11. The electromagnetic shield manufacturing method according to any one of claims 1 to 10, characterized by, A second chip is mounted on the fourth pad.

12. The electromagnetic shield manufacturing method of claim 1, wherein, Before the step of plastic encapsulating the first chip to form the plastic encapsulation body, the following step is further included: The first glue body is removed. The step of forming the shielding line on the substrate comprises the following steps: A first chip is mounted on the substrate; the first chip is electrically connected with the second pad; A wire bump is formed on the side of the first chip away from the substrate; A first line arc is formed; one end of the first line arc is connected with the first pad, and the other end is connected with the wire bump; forming a first colloid covering the first wire arc; breaking the first wire arc, removing the first wire arc not connected to the first pad, and taking the first wire arc connected to the first pad as the shielding wire.

13. The electromagnetic shield manufacturing method according to claim 12, wherein The step of forming a wire bonding part on the side of the first chip away from the substrate comprises: attaching a first cover on the substrate, the first cover covering the first chip; the first cover serving as the wire bonding part; Alternatively, forming a second colloid higher than the first chip on the outer periphery of the first chip, and attaching a first cover plate on the second colloid.

14. The electromagnetic shield manufacturing method according to claim 13, wherein The first cover is provided with a second metal layer, and the first wire arc connects the first pad and the second metal layer; Alternatively, the first cover plate is provided with a third metal layer, and the first wire arc connects the first pad and the third metal layer.

15. The electromagnetic shield manufacturing method according to claim 13, wherein The step of forming a shielding wire on the substrate further comprises: removing the first cover or removing the first cover plate.

16. The electromagnetic shield manufacturing method according to any one of claims 13 to 15, wherein The step of plastic packaging the first chip to form a plastic package comprises: removing the second colloid.

17. A method of making an electromagnetic shield, the method comprising: It comprises: providing a plastic package with a shielding wire; providing a substrate attached with a first chip; wherein the substrate is provided with a first pad connected to ground; covering the plastic package to the substrate; wherein the plastic package covers the first chip, the shielding wire is electrically connected to the first pad, and is located on the outer periphery of the first chip; forming a first metal layer on the side of the plastic package away from the substrate, which is electrically connected to the shielding wire; wherein the step of providing a plastic package with a shielding wire comprises: providing a first carrier; attaching a wire bonding part on the first carrier; forming a third wire arc connecting the first carrier and the wire bonding part; forming a third colloid covering the third wire arc; breaking the third wire arc, removing the third wire arc not connected to the first pad, and taking the third wire arc connected to the first pad as the shielding wire; forming a semi-cured plastic package on the first carrier, which covers the shielding wire and the wire bonding part; removing the first carrier; removing the wire bonding part to form a groove on the plastic package.

18. The electromagnetic shield production method according to claim 17, wherein In the step of covering the plastic package to the substrate, the first chip is accommodated in the groove.

19. The electromagnetic shield fabrication method of claim 17, wherein, The step of covering the plastic package to the substrate comprises: covering the semi-cured plastic package on the substrate in a film manner; pressing the semi-cured plastic package to cure the plastic package; grinding the plastic package to expose the shielding wire from the surface of the plastic package.

20. The electromagnetic shield fabrication method of claim 17, wherein, The first carrier is provided with a second wire bonding pad, and the step of attaching a wire bonding part on the first carrier comprises: attaching a wire bonding part on the first carrier; attaching a protective layer on the first carrier; the thickness of the protective layer is less than the thickness of the wire bonding part; In the step of forming a third wire arc connecting the first carrier and the wire bonding part: the third wire arc connects the second wire bonding pad and the wire bonding part; The step of breaking the third wire arc comprises: grinding the third wire arc and the wire bonding part to be flush with the protective layer; After the step of removing the first carrier, it further comprises: removing the wire bonding part and the protective layer to form the groove on the plastic package.

21. The electromagnetic shield fabrication method of claim 17, wherein, In the step of removing the first carrier, a second wire-bonding pad on the first carrier is separated from the first carrier and integrated with the shielding wire.

22. The electromagnetic shield fabrication method of claim 17, wherein, The step of providing the plastic package with the shielding wire comprises: providing a second carrier, the second carrier having a protrusion; forming a shielding wire on the second carrier, wherein a fourth wire arc connecting the second carrier and the protrusion is formed, and the fourth wire arc is broken to form the shielding wire; forming a semi-cured plastic package on the second carrier, the semi-cured plastic package covering the shielding wire and the protrusion; removing the second carrier to form a groove on the plastic package, the groove corresponding to the position of the protrusion.

23. The electromagnetic shield production method according to claim 22, wherein The protrusion comprises a first protrusion and a second protrusion, the height of the first protrusion being higher than the height of the second protrusion. In the step of forming a shielding wire on the second carrier, it comprises: forming a fourth wire arc connecting the second carrier and the first protrusion; breaking the fourth wire arc, and grinding the fourth wire arc and the first protrusion to be flush with the second protrusion to form the shielding wire.

24. The electromagnetic interference shielding method of claim 22, wherein, In the step of removing the second carrier, a third wire-bonding pad on the second carrier is separated from the second carrier and integrated with the shielding wire.

25. A package structure, comprising: The packaging structure is made by the electromagnetic shielding manufacturing method of any one of claims 1-24, and comprises: a substrate provided with a shielding wire; a first device and a second device are attached to the substrate, the first device and the second device are respectively electrically connected to the substrate, and the shielding wire is arranged between the first device and the second device; a plastic package connected to the substrate and covering the first device and the second device; a first metal layer arranged on the surface of the plastic package, the first metal layer and the shielding wire being connected at the end away from the substrate, and at least one of the first metal layer and the shielding wire being grounded.

26. The package structure of claim 25, wherein, The first metal layer is arranged on part of the surface of the plastic package, the projection of the first metal layer on the substrate covers the first device, and the projection of the first metal layer on the substrate is arranged in a staggered manner with the second device.

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