Bidirectional BJT solid-state circuit breaker and driving circuit thereof

Abstract

The invention provides a bidirectional BJT solid-state circuit breaker and a driving circuit thereof, and relates to the technical field of power electronics, the driving circuit comprises a driving current dynamic adjustment module, the driving current dynamic adjustment module comprises a self-adaptive adjustment sub-module and a fuzzy controller, the self-adaptive adjustment sub-module is used for obtaining current working condition data of a bidirectional BJT device, and the fuzzy controller is used for obtaining the current working condition data of the bidirectional BJT device; the current working condition data is input into a pre-trained long-short time memory network, the target base voltage of the bidirectional BJT device is obtained, the fuzzy controller is used for obtaining the sampling base voltage of the bidirectional BJT device, a control signal is adjusted according to the difference value between the target base voltage and the sampling base voltage, and a target control signal is output; and the microwave driving module is used for converting the target control signal into a smooth analog baseband signal, loading the smooth analog baseband signal onto the high-frequency carrier signal, generating a radio frequency modulation signal, performing rectification processing on the radio frequency modulation signal, and outputting the radio frequency modulation signal to the bidirectional BJT device. The driving circuit can realize dynamic adjustment of the driving current, realize power consumption optimization and reduce driving power consumption.

Description

Technical Field

[0001] The present application relates to the field of power electronics technology, and in particular to a bidirectional BJT solid-state circuit breaker and a drive circuit thereof. Background Art

[0002] DC power systems are playing an increasingly important role in today's power grids. Over the past few decades, many DC power applications have seen significant growth, including photovoltaic systems, distributed generators, energy storage systems, and electric vehicles. Compared to AC systems, DC systems offer advantages such as high efficiency, high integration of renewable energy, and flexible control.

[0003] Solid-state circuit breakers are considered an effective means of isolating faults in DC power grids. Compared to traditional circuit breakers that rely on mechanical contacts and hybrid circuit breakers that combine mechanical and semiconductor structures, solid-state circuit breakers offer a breakthrough in contactless switching. Their switching speeds are dramatically improved, eliminating the risk of arcing. Their device lifespan is orders of magnitude longer than mechanical circuit breakers, while also offering the ability to rapidly respond to extreme current fluctuations. These advantages make all-solid-state circuit breakers a key enabler for rapid fault isolation in scenarios such as renewable energy grid integration and DC microgrids.

[0004] Currently, solid-state circuit breakers are often driven by a constant current drive method, which results in large power consumption. Summary of the Invention

[0005] In view of this, the present application proposes a bidirectional BJT solid-state circuit breaker and a driving circuit thereof.

[0006] In a first aspect, the present application provides a driving circuit for a bidirectional BJT solid-state circuit breaker, the driving circuit comprising: a drive current dynamic regulation module, comprising an adaptive regulation submodule and a fuzzy controller, wherein the adaptive regulation submodule is used to obtain current operating condition data of the bidirectional BJT device, input the current operating condition data into a pre-trained long short-term memory network, and obtain a target base voltage of the bidirectional BJT device; and the fuzzy controller is used to adjust a control signal according to the difference between the target base voltage and the sampled base voltage, and output a target control signal; The microwave driving module is used to receive the target control signal and convert the target control signal into a smooth analog baseband signal, load the analog baseband signal onto a high-frequency carrier signal through envelope modulation technology to generate a radio frequency modulation signal, and rectify the radio frequency modulation signal into two low-frequency DC signals, which are output to the two bases of the bidirectional BJT device respectively.

[0007] In one embodiment, the adaptive adjustment submodule includes: a detection unit, the detection unit being configured to detect current state information of the bidirectional BJT device and perform data fusion processing on the current state information to obtain the current operating condition data, wherein the current state information includes current information, temperature information, and electromagnetic interference information; An adaptive regulator is used to receive the current operating condition data, generate an operating condition feature vector according to the current operating condition data, input the operating condition feature vector into a pre-trained long short-term memory network, and obtain a target base voltage of the bidirectional BJT device.

[0008] In one embodiment, the detection unit includes: a current sensor, a temperature sensor, and an electromagnetic interference sensor; The current sensor is used to detect the collector current of the bidirectional BJT device; The temperature sensor is used to detect the temperature information of the bidirectional BJT device; The method is used to detect electromagnetic interference information in the area where the bidirectional BJT device is located.

[0009] In one embodiment, the current state information also includes feedback information of the microwave driving module; the adaptive regulation submodule also includes: a feedback unit, the feedback unit is used to receive a feedback signal output by the microwave driving module, and determine the feedback information based on the feedback signal, wherein the feedback information includes attribute information of the low-frequency DC signal.

[0010] In one embodiment, the microwave driving module includes: a radio frequency oscillator, a radio frequency modulator, and a radio frequency rectification circuit; The radio frequency oscillator is used to generate the high frequency carrier signal; The input end of the radio frequency modulator is connected to the radio frequency oscillator and the fuzzy controller respectively, and the radio frequency modulator is used to convert the target control signal into the analog baseband signal and modulate it onto the high frequency carrier signal to generate the radio frequency modulated signal; The RF rectifier circuit is connected to the output end of the RF modulator, and is used to rectify the RF modulated signal and output two low-frequency DC signals to the two bases of the bidirectional BJT device respectively.

[0011] In one embodiment, the radio frequency rectification circuit includes: a Wilkinson power divider and a radio frequency rectification unit; The input end of the Wilkinson power splitter is connected to the output end of the radio frequency modulator, and the Wilkinson power splitter is used to distribute the power of the radio frequency modulated signal and output two power split signals; The RF rectifier unit is connected to the two output ends of the Wilkinson power divider respectively, and is used to rectify the two power split signals respectively, and output two low-frequency DC signals to the two bases of the bidirectional BJT device respectively.

[0012] In a second aspect, the present application further provides a bidirectional BJT solid-state circuit breaker, comprising: a bidirectional BJT device, connected to the power supply line, and used to switch the power supply line on and off; As described in the first aspect, the driving circuit is connected to the base of the bidirectional BJT device, and the driving circuit is used to output two low-frequency DC signals to the two bases of the bidirectional BJT device to control the on and off of the bidirectional BJT device.

[0013] In one embodiment, the bidirectional BJT solid-state circuit breaker further includes: a pre-shutdown circuit and a processing circuit; The processing circuit is connected to the pre-shutdown circuit, and is used to control the conduction status of the pre-shutdown circuit in the pre-shutdown stage, so as to form a charge release path of the bidirectional BJT device through the pre-shutdown circuit.

[0014] In one embodiment, the pre-shutdown circuit includes: a first MOS transistor, a second MOS transistor, a third MOS transistor, and a fourth MOS transistor; The first electrode of the first MOS transistor is connected to the first output terminal of the driving circuit, the second electrode of the first MOS transistor is connected to the first base of the bidirectional BJT device, and the gate of the first MOS transistor is connected to the processing circuit; The first electrode of the second MOS transistor is connected to the collector of the bidirectional BJT device, the second electrode of the second MOS transistor is connected to the first base of the bidirectional BJT device, and the gate of the second MOS transistor is connected to the processing circuit; The first electrode of the third MOS transistor is connected to the second output terminal of the driving circuit, the second electrode of the third MOS transistor is connected to the second base of the bidirectional BJT device, and the gate of the third MOS transistor is connected to the processing circuit; The first electrode of the fourth MOS transistor is connected to the emitter of the bidirectional BJT device, the second electrode of the fourth MOS transistor is connected to the second base of the bidirectional BJT device, and the gate of the fourth MOS transistor is connected to the processing circuit.

[0015] In one embodiment, in the pre-shutdown stage, the first MOS transistor and the third MOS transistor are in a disconnected state, and the second MOS transistor and the fourth MOS transistor are in a conductive state.

[0016] The driving circuit of a bidirectional BJT solid-state circuit breaker of the present application has the following advantages over the related art: 1. The driving circuit of the present application includes a driving current dynamic adjustment module and a microwave driving module. The driving current dynamic adjustment module includes an adaptive adjustment submodule and a fuzzy controller. The adaptive adjustment submodule can obtain the current operating condition data of the bidirectional BJT device, input the current operating condition data into the pre-trained long short-term memory network, and obtain the target base voltage of the bidirectional BJT device. The fuzzy controller is used to obtain the sampled base voltage of the bidirectional BJT device, adjust the control signal according to the difference between the target base voltage and the sampled base voltage, and output the target control signal to the microwave driving module. The microwave driving module outputs a low-frequency DC signal to the bidirectional BJT device based on the target control signal. Through the synergistic effect of the microwave driving module and the driving current dynamic adjustment module, dynamic adjustment of the current in the driving circuit is realized, power consumption optimization can be achieved, thereby reducing driving power consumption.

[0017] 2. The drive current dynamic regulation module is responsible for medium- and long-term trend modeling and prediction compensation through the LSTM network, and responds to local disturbances in real time through the fuzzy controller, implementing a two-layer control strategy of "prediction + regulation" for the drive system. This ensures that the system can maintain stable drive and low-power operation under extreme conditions such as rapid load changes or high EMI interference. It can achieve precise and real-time control of the bidirectional BJT base current to adapt to complex load and environmental conditions.

[0018] 3. The microwave driving module of the present application adopts a non-contact microwave signal transmission method, loads the target control signal into the high-frequency carrier signal, transmits it through the radio frequency link, and demodulates and rectifies it on the target side, and finally generates a stable and isolated DC current as the driving source of the base of the bidirectional BJT device. While ensuring the effective transmission of high-frequency energy, it realizes efficient gate drive of the power switching device. The use of microwave driving technology and dynamic adjustment strategy improves the response speed of the system and adapts to the fast switching requirements of high-frequency equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following briefly introduces the drawings required for use in the embodiments or related technical descriptions. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0020] Figure 1 This is a schematic structural diagram of a driving circuit for a bidirectional BJT solid-state circuit breaker in one embodiment of the present application; Figure 2 This is a structural diagram of a bidirectional BJT solid-state circuit breaker in one embodiment of the present application; Figure 3 1 is a timing diagram of gate drive signals corresponding to the first MOS transistor, the second MOS transistor, the third MOS transistor, and the fourth MOS transistor in one embodiment of the present application.

[0021] Description of reference numerals: 1-driving circuit, 11-driving current dynamic regulation module, 111-adaptive regulation submodule, 1111-detection unit, 1112-adaptive regulator, 1113-feedback unit, 112-fuzzy controller, 12-microwave driving module, 121-RF oscillator, 122-RF modulator, 123-RF rectifier circuit, 1231-Wilkinson power divider, 1232-RF rectifier unit, 2-bidirectional BJT device, 3-pre-shutdown circuit. DETAILED DESCRIPTION

[0022] The following will be combined with the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the described embodiments are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0023] In some embodiments, as Figure 1 As shown, the present application provides a driving circuit 1 for a bidirectional BJT solid-state circuit breaker, and the driving circuit 1 includes: a driving current dynamic adjustment module 11 and a microwave driving module 12.

[0024] The drive current dynamic regulation module 11 includes an adaptive regulation submodule 111 and a fuzzy controller 112. The adaptive regulation submodule 111 is configured to obtain current operating condition data of the bidirectional BJT (bipolar junction transistor) device 2, input the current operating condition data into a pre-trained long short-term memory network, and obtain a target base voltage for the bidirectional BJT device 2. The fuzzy controller 112 is configured to adjust a control signal based on the difference between the target base voltage and the sampled base voltage, and output the target control signal. It should be noted that the sampled base voltage can be obtained by sampling a corresponding sampling unit. The fuzzy controller 112 can obtain the sampled base voltage of the bidirectional BJT device 2 and then adjust the control signal based on the difference between the target base voltage and the sampled base voltage. The input of the fuzzy controller 112 can also be connected to the output of a comparator. By inputting the target base voltage and the sampled base voltage into the two inputs of the comparator, the output of the comparator outputs an error signal to the fuzzy controller 112.

[0025] The microwave driving module 12 is used to receive the target control signal and convert the target control signal into a smooth analog baseband signal. The analog baseband signal is loaded onto the high-frequency carrier signal through envelope modulation technology to generate an RF modulated signal. The RF modulated signal is rectified and converted into two low-frequency DC signals, which are output to the two bases of the bidirectional BJT device 2 respectively.

[0026] The Long Short-Term Memory (LSTM) network can be trained based on historical data. The target control signal can be a pulse-width modulation (PWM) signal. The pre-trained LSTM network can predict the state change trend of the power device under driving behavior based on the current operating condition data and output the target base voltage of the bidirectional BJT device 2. The fuzzy controller 112 then adjusts the control signal based on the difference between the target base voltage and the sampled base voltage. The fuzzy controller 112 then outputs the target control signal to the microwave driver module 12, which controls the current output to the base of the bidirectional BJT device 2, thereby achieving dynamic regulation and optimized control of the base current of the bidirectional BJT device 2.

[0027] As can be understood, to further enhance the system's regulation and robustness under unexpected operating conditions, a fuzzy controller 112 is introduced as an auxiliary loop within the dynamic drive current regulation module 11. This auxiliary loop takes the voltage error (the difference between the target base voltage and the sampled base voltage) as input and performs fuzzy inference according to pre-set fuzzy rules (rapidly increasing the base drive current when the load is large and the error rises, and appropriately reducing the base drive current when the load is light). The inference result is defuzzified using the center of gravity method to produce a precise control signal, which is used to adjust the control signal (for example, fine-tuning the PWM duty cycle) and output the target control signal, achieving fast response and stable control. This fuzzy control, when combined with a neural network algorithm, can both handle historical data prediction and adjust to unexpected operating conditions in real time, ensuring optimal system performance under various circumstances. The driving current dynamic regulation module 11 is responsible for medium- and long-term trend modeling and prediction compensation through the LSTM network, and responds to local disturbances in real time through the fuzzy controller 112, realizing the dual-layer control strategy of "prediction + regulation" of the driving system, ensuring that the system can still maintain stable drive and low-power operation under extreme conditions such as rapid load changes or high EMI interference, and can achieve accurate and real-time control of the bidirectional BJT base current to adapt to changes in complex loads and environmental conditions.

[0028] The microwave drive module 12 adopts a non-contact microwave signal transmission method, loads the target control signal into the high-frequency carrier signal, transmits it through the radio frequency link, and demodulates and rectifies it on the target side, finally generating a stable and isolated DC current as the driving source for the base of the bidirectional BJT device 2. While ensuring the effective transmission of high-frequency energy, it realizes efficient gate drive of the power switching device. The use of microwave drive technology and dynamic adjustment strategy improves the response speed of the system and adapts to the fast switching requirements of high-frequency equipment.

[0029] The driving circuit 1 of the above-mentioned bidirectional BJT solid-state circuit breaker includes a driving current dynamic adjustment module 11 and a microwave driving module 12. The driving current dynamic adjustment module 11 includes an adaptive adjustment submodule 111 and a fuzzy controller 112. The adaptive adjustment submodule 111 can obtain the current operating condition data of the bidirectional BJT device 2, input the current operating condition data into a pre-trained long short-term memory network, and obtain the target base voltage of the bidirectional BJT device 2. The fuzzy controller 112 is used to obtain the sampled base voltage of the bidirectional BJT device 2, adjust the control signal according to the difference between the target base voltage and the sampled base voltage, and output the target control signal to the microwave driving module 12. The microwave driving module 12 outputs a low-frequency DC signal to the bidirectional BJT device 2 based on the target control signal. Through the synergistic effect of the microwave driving module 12 and the driving current dynamic adjustment module 11, dynamic adjustment of the current in the driving circuit 1 is realized, power consumption optimization can be achieved, thereby reducing driving power consumption.

[0030] In some embodiments, as Figure 1 As shown, the adaptive adjustment submodule 111 includes: a detection unit 1111 and an adaptive adjuster 1112 .

[0031] The detection unit 1111 is used to detect the current state information of the bidirectional BJT device 2 and perform data fusion processing on the current state information to obtain current operating condition data, wherein the current state information includes current information, temperature information and electromagnetic interference information.

[0032] The detection unit 1111 is used to detect the current state information of the bidirectional BJT device 2 and perform data fusion processing on the current state information to obtain current operating condition data, wherein the current state information includes current information, temperature information and electromagnetic interference information.

[0033] The detection unit 1111 may include multiple types of sensors, and collect the current state information of the bidirectional BJT device 2 through the multiple types of sensors. After obtaining the current state information of the bidirectional BJT device 2, the detection unit 1111 is used to detect the current state information of the bidirectional BJT device 2, and perform data fusion processing on the current state information to obtain current operating condition data, wherein the current state information includes current information, temperature information and electromagnetic interference information.

[0034] The detection unit 1111 may include multiple types of sensors to collect the current state information of the bidirectional BJT device 2 through the multiple types of sensors. After obtaining the current state information of the bidirectional BJT device 2, a comprehensive working condition parameter can be obtained using digital signal processing technology (such as Kalman filtering). , reduce noise interference, and thus obtain more accurate and robust real-time monitoring information. Comprehensive working condition parameters The calculation formula is as follows:

[0035] in, is the collector current of bidirectional BJT device 2 , T is temperature, For electromagnetic interference, 、 、 are weight coefficients respectively.

[0036] The adaptive regulator 1112 is used to receive current operating condition data, generate an operating condition feature vector based on the current operating condition data, input the operating condition feature vector into a pre-trained long short-term memory network, and obtain a target base voltage of the bidirectional BJT device 2.

[0037] It can be understood that the LSTM network predicts future control requirements by processing historical data sequences. By training the LSTM network on time series data, the model will learn to predict the optimal base current under various operating conditions.

[0038] The adaptive regulator 1112 inputs the current working condition data into the pre-trained LSTM model, and the LSTM model determines the correction factor α, and further determines the target base current through the correction factor α, thereby determining the output target base voltage according to the target base current, and completing the dynamic adjustment of the base current of the bidirectional BJT device 2, so that the base current accurately matches the load demand. By the collector current And the preset proportional coefficient β determines:

[0039] Then the target base current is:

[0040] Target base voltage , is the driving resistor, then the target base voltage and the sampling base voltage The difference . Then through the self-learning control of the target base current, It will make dynamic adjustments based on real-time load changes, temperature fluctuations and other complex factors, rather than relying solely on a simple proportional relationship, and adjust the control signal accordingly. This enables the regulation of base current to adapt to more complex working conditions, accurately match load requirements, and achieve more efficient and precise control, thereby reducing power consumption and improving response speed.

[0041] By comparing the target voltage with the actual feedback voltage to generate an error signal, the system collects the feedback voltage of the base current in real time during each control cycle and uses The driving fuzzy controller 112 adjusts the duty cycle D of the PWM signal to control the base current so that the average value of the base current is satisfy:

[0042] in, is the base current amplitude.

[0043] In some embodiments, the detection unit 1111 includes: a current sensor for detecting the collector current of the bidirectional BJT device 2, a temperature sensor for detecting the temperature of the bidirectional BJT device 2, and an electromagnetic interference sensor for detecting electromagnetic interference information in the area where the bidirectional BJT device 2 is located.

[0044] The current sensor may be a Hall sensor. In applications, more types of sensors may be provided, such as a vibration generator and a humidity sensor.

[0045] It can be understood that the use of multiple sensors such as current sensors, temperature sensors, and electromagnetic interference sensors can form a multi-dimensional data acquisition network to obtain real-time status data of the environment and bidirectional BJT device 2, thereby facilitating the acquisition of accurate current operating condition data. After inputting current operating condition data into the LSTM network, the LSTM network can be used to predict the optimal base drive current under the current operating conditions, thereby optimizing the base drive current and facilitating the optimization of the power consumption and performance of the solid-state circuit breaker.

[0046] In some embodiments, the current state information also includes feedback information of the microwave driving module 12; the adaptive adjustment submodule 111 also includes: a feedback unit 1113, the feedback unit 1113 is used to receive the feedback signal output by the microwave driving module 12, and determine the feedback information based on the feedback signal, wherein the feedback information includes attribute information of the low-frequency DC signal.

[0047] The microwave driver module 12 can be equipped with an RF output monitoring channel to collect signals such as power, spectrum, or envelope offset in real time as feedback signals. The feedback unit 1113 receives the feedback signal output by the microwave driver module 12. The RF output feedback information from the microwave driver module 12 (such as the rectified output current, voltage envelope amplitude, and spectrum offset) is combined with the information detected by the detection unit 1111 to jointly construct more complete current operating condition data.

[0048] When the current operating condition data includes feedback information, the LSTM network can output a more accurate target base voltage after inputting this data into the LSTM network. This allows the regulation module to not only control RF behavior but also use the RF output as model input, forming a bidirectional "prediction-regulation-execution-feedback-relearning" architecture, which further optimizes the base drive current.

[0049] It should be noted that, in the application, the microwave drive module 12 and the dynamic adjustment module can adopt a common platform deployment strategy (such as integration into the same SoC or FPGA platform), which is conducive to improving the integration and facilitating the cooperation between the microwave drive module 12 and the dynamic adjustment module, thereby facilitating the construction of a bidirectional BJT solid-state circuit breaker with high-frequency isolation, fast shutdown, and high robustness requirements.

[0050] In some embodiments, as Figure 1 As shown, the microwave driving module 12 includes a radio frequency oscillator 121 , a radio frequency modulator 122 and a radio frequency rectification circuit 123 .

[0051] RF oscillator 121 is used to generate a high-frequency carrier signal. RF oscillator 121 can use a common-base Colpitts oscillator based on SiC devices, leveraging the high-frequency characteristics of SiC transistors (cutoff frequency fT > 30 GHz) to generate a 5 GHz high-frequency carrier signal. An appropriate LC circuit (inductor L and capacitor C) is selected to set the oscillation frequency. The oscillation frequency is set to 5 GHz. The oscillation frequency is calculated as follows:

[0052] The input terminals of RF modulator 122 are connected to RF oscillator 121 and fuzzy controller 112, respectively. RF modulator 122 is configured to convert the target control signal into an analog baseband signal, which is then modulated onto a high-frequency carrier signal to generate an RF modulated signal. RF modulator 122 employs a second-order Butterworth low-pass filter to extract the average voltage of the target control signal (e.g., a PWM signal), suppressing high-frequency components and converting the PWM signal into a smooth analog baseband signal for application to the high-frequency carrier signal using envelope modulation techniques.

[0053] For example, the original PWM signal is modulated onto a carrier signal through envelope modulation technology. The principle is to mix a low-frequency PWM signal with a high-frequency carrier signal. The frequency of the modulated signal can be 5.0 GHz, and its envelope changes with the change of the PWM signal.

[0054] The RF rectifier circuit 123 is connected to the output end of the RF modulator 122 . The RF rectifier circuit 123 is used to rectify the RF modulated signal and output two low-frequency DC signals to the two bases of the bidirectional BJT device 2 .

[0055] It can be understood that the RF modulated signal is rectified by the RF rectifier circuit 123, and the high-frequency components are filtered out through the rectification process to ensure the output of a stable DC voltage, thereby ensuring the provision of a reliable driving power supply and meeting the requirements of efficient driving.

[0056] In some embodiments, as Figure 1 As shown, the RF rectification circuit 123 includes a Wilkinson power divider 1231 and a RF rectification unit 1232 .

[0057] The input of Wilkinson power divider 1231 is connected to the output of RF modulator 122. Wilkinson power divider 1231 is used to distribute the power of the RF modulated signal and output two power-split signals. RF rectifier unit 1232 is connected to the two outputs of Wilkinson power divider 1231. RF rectifier unit 1232 is used to rectify the two power-split signals and output two low-frequency DC signals to the two bases of bidirectional BJT device 2.

[0058] As you can understand, to reduce signal loss, the modulated high-frequency RF signal is fed into Wilkinson power divider 1231 for power distribution and port isolation. This power divider, through its microstrip structure and isolation resistors, achieves equal power output for multiple signals and ensures good isolation between output channels, thereby improving system stability and crosstalk resistance.

[0059] The wavelength calculation formula of microwave signal is: , where c is the speed of light and f is the frequency. For a 5GHz frequency signal, the wavelength is 6cm.

[0060] The high frequency modulated signal is distributed to two output ports using a 1-to-2 Wilkinson power divider 1231. The Wilkinson power divider 1231 achieves power distribution and port isolation through a λ / 4 impedance transformation segment. Its characteristic impedance By the formula Sure, is the input impedance.

[0061] While distributing, the Wilkinson power divider 1231 ensures high isolation between the ports through isolation resistors to avoid signal crosstalk. Suppress coupling between output ports. To ensure phase synchronization of the output signals, the phase difference of the output signals is adjusted through the phase compensation microstrip line to ensure that the phase difference of each output signal is less than 5°.

[0062] For example, a Schottky diode rectifier circuit can be used to convert the two power split signals into a low-frequency DC signal. A low-pass filter can also be used to filter out high-frequency components to ensure a stable DC voltage output. A linear regulator can also be used to regulate the output voltage to ensure a constant, non-fluctuating supply voltage, providing a reliable drive power supply that meets efficient drive requirements.

[0063] In this embodiment, high-frequency isolated signal transmission is performed through an RF microstrip transmission structure and a power distribution network, which reduces dependence on traditional isolation components and simplifies the isolation design. Compared with traditional transformer drive and other methods that are easily affected by parasitic inductance and leakage inductance in high-frequency applications, resulting in an increase in base storage effect and a decrease in switching speed, this embodiment adopts microwave drive technology and dynamic adjustment strategies to improve the response speed of the system and adapt to the fast switching requirements of high-frequency equipment. In addition, in order to solve the problem that traditional optocoupler and transformer isolation methods are difficult to meet the fast switching requirements of high-frequency equipment and affect system efficiency, the microwave drive module 12 of this embodiment uses microwaves for signal propagation, ensuring the stable and efficient operation of the solid-state circuit breaker under high-frequency conditions.

[0064] In some embodiments, as Figure 1 As shown, the present application also provides a bidirectional BJT solid-state circuit breaker, which includes: a driving circuit 1 and a bidirectional BJT device 2 as described in any of the above solutions.

[0065] The bidirectional BJT device 2 is connected to the power supply line and is used to switch the power supply line on and off.

[0066] The driving circuit 1 is connected to the base of the bidirectional BJT device 2 . The driving circuit 1 is used to output two low-frequency DC signals to the two bases of the bidirectional BJT device 2 to control the on and off of the bidirectional BJT device 2 .

[0067] The collector of the bidirectional BJT device 2 can receive the power signal Vc, and the emitter of the bidirectional BJT device 2 can be grounded. The driving circuit 1 can output two low-frequency DC signals to the two bases of the bidirectional BJT device 2 to control the on and off of the bidirectional BJT device 2.

[0068] It can be understood that the driving circuit 1 includes a driving current dynamic adjustment module 11 and a microwave driving module 12. The driving current dynamic adjustment module 11 includes an adaptive adjustment submodule 111 and a fuzzy controller 112. The adaptive adjustment submodule 111 can obtain the current operating condition data of the bidirectional BJT device 2, input the current operating condition data into the pre-trained long short-term memory network, and obtain the target base voltage of the bidirectional BJT device 2. The fuzzy controller 112 is used to obtain the sampled base voltage of the bidirectional BJT device 2, adjust the control signal according to the difference between the target base voltage and the sampled base voltage, and output the target control signal to the microwave driving module 12. The microwave driving module 12 outputs a low-frequency DC signal to the bidirectional BJT device 2 based on the target control signal. Through the synergistic effect of the microwave driving module 12 and the driving current dynamic adjustment module 11, the dynamic adjustment of the current in the driving circuit 1 is realized, and the power consumption optimization can be achieved, thereby reducing the driving power consumption. Similarly, because the bidirectional BJT solid-state circuit breaker of this embodiment includes a bidirectional BJT device 2 and a drive circuit 1 according to any of the above schemes, the BJT solid-state circuit breaker of this embodiment also implements dynamic adjustment of the current in the drive circuit 1, which can optimize power consumption and thus reduce drive power consumption. Furthermore, it can achieve precise, real-time control of the bidirectional BJT base current to adapt to complex load and environmental conditions.

[0069] In some embodiments, as Figure 2 As shown, the bidirectional BJT solid-state circuit breaker further includes: a pre-shutdown circuit 3 and a processing circuit.

[0070] The processing circuit is connected to the pre-shutdown circuit 3 , and is used to control the conduction status of the pre-shutdown circuit 3 in the pre-shutdown stage, and form a charge release path for the bidirectional BJT device 2 through the pre-shutdown circuit 3 .

[0071] Among them, such as Figure 2 As shown, the bidirectional BJT is a four-terminal device with four terminals: E1, E2, B1, and B2. E1 and E2 are used to connect the main circuit, and B1 and B2 are used to inject drive current. Figure 2 The E1 pole in the middle can be called the collector.

[0072] In applications, when a bidirectional BJT is in the on state, a large number of minority carriers accumulate in the B region (including regions B1 and B2) and the E region (including regions E1 and E2). This stored charge needs to be removed or recombined before the transistor can be fully turned off. Therefore, in this embodiment, the processing circuit controls the conduction status of the pre-shutdown circuit 3 during the pre-shutdown phase, so that the pre-shutdown circuit 3 forms a charge release path for the bidirectional BJT device 2. This creates a dedicated charge release path for the bidirectional BJT device, allowing it to orderly release residual charge within the device before the shutdown operation. This pre-shutdown control reduces the base storage effect and improves shutdown efficiency, thereby ensuring that the solid-state circuit breaker can stably and reliably complete state switching during the shutdown process.

[0073] In some embodiments, the pre-shutdown circuit 3 includes: a first MOS transistor Q1 , a second MOS transistor Q2 , a third MOS transistor Q3 , and a fourth MOS transistor Q4 .

[0074] A first electrode of the first MOS transistor Q1 is connected to the first output terminal of the driving circuit 1 , a second electrode of the first MOS transistor Q1 is connected to the first base of the bidirectional BJT device 2 , and a gate of the first MOS transistor Q1 is connected to the processing circuit.

[0075] A first electrode of the second MOS transistor Q2 is connected to the collector of the bidirectional BJT device 2 , a second electrode of the second MOS transistor Q2 is connected to the first base of the bidirectional BJT device 2 , and a gate of the second MOS transistor Q2 is connected to the processing circuit.

[0076] A first electrode of the third MOS transistor Q3 is connected to the second output terminal of the driving circuit 1 , a second electrode of the third MOS transistor Q3 is connected to the second base of the bidirectional BJT device 2 , and a gate of the third MOS transistor Q3 is connected to the processing circuit.

[0077] A first electrode of the fourth MOS transistor Q4 is connected to the emitter of the bidirectional BJT device 2 , a second electrode of the fourth MOS transistor Q4 is connected to the second base of the bidirectional BJT device 2 , and a gate of the fourth MOS transistor Q4 is connected to the processing circuit.

[0078] The first MOS transistor Q1 , the second MOS transistor Q2 , the third MOS transistor Q3 and the fourth MOS transistor Q4 may be NMOS transistors or PMOS transistors respectively, which is not specifically limited here.

[0079] It can be understood that the processing circuit is connected to the gates of the first MOS transistor Q1, the second MOS transistor Q2, the third MOS transistor Q3, and the fourth MOS transistor Q4, respectively. The processing circuit then outputs corresponding gate drive signals to each MOS transistor, thereby controlling the on / off state of each MOS transistor. The first MOS transistor Q1 controls the on / off connection between the drive circuit 1 and the first base of the bidirectional BJT device 2. The second MOS transistor Q2 controls the on / off connection between the collector and the first base of the bidirectional BJT device 2. The third MOS transistor Q3 controls the on / off connection between the drive circuit 1 and the second base of the bidirectional BJT device 2. The fourth MOS transistor Q4 controls the on / off connection between the emitter and the second base of the bidirectional BJT device 2. By short-circuiting the base and collector of the bidirectional BJT device 2, and short-circuiting the base and emitter of the bidirectional BJT device 2, that is, by turning on the second MOS transistor Q2 and the fourth MOS transistor Q4, a low-impedance charge release path is formed, accelerating the recombination of stored charge, and significantly reducing shutdown delay. It can also be understood that, when performing pre-shutdown, it is necessary to disconnect the connection between the drive circuit 1 and the base of the bidirectional BJT device 2 to prevent the drive circuit 1 from continuously providing charge to the base of the bidirectional BJT device 2. In the pre-shutdown stage, the first MOS tube Q1 and the third MOS tube Q3 are in the off state, and the second MOS tube Q2 and the fourth MOS tube Q4 are in the on state. For example, the first MOS tube Q1, the second MOS tube Q2, the third MOS tube Q3 and the fourth MOS tube Q4 can be PMOS tubes respectively, and the timing diagram of the gate drive signal of each MOS tube can be as follows: Figure 3 shown.

[0080] It should be noted that since the bidirectional BJT device 2 involved in this application is a completely symmetrical device, the above description of the driving circuit 1 mainly analyzes the forward conduction situation. The reverse conduction situation is the same as the forward conduction situation and will not be repeated here.

[0081] Those skilled in the art will understand that the features described in the various embodiments and / or claims of the present application may be combined and / or combined in a variety of ways, even if such combinations or combinations are not explicitly described in the present application. In particular, without departing from the spirit and teachings of the present application, the features described in the various embodiments and / or claims of the present application may be combined and / or combined in a variety of ways. All of these combinations and / or combinations fall within the scope of the present application. Therefore, the scope of the present application should not be limited to the above-mentioned embodiments, but should be determined not only by the attached claims, but also by the equivalents of the attached claims. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application should be included in the scope of protection of the present application.

Claims

1. A driving circuit for a bidirectional BJT solid-state circuit breaker, characterized in that: The driving circuit includes: A drive current dynamic regulation module, comprising an adaptive regulation submodule and a fuzzy controller, wherein the adaptive regulation submodule is used to obtain current operating condition data of the bidirectional BJT device, input the current operating condition data into a pre-trained long short-term memory network, and obtain a target base voltage of the bidirectional BJT device; and the fuzzy controller is used to adjust a control signal according to the difference between the target base voltage and the sampled base voltage, and output a target control signal; The microwave driving module is used to receive the target control signal and convert the target control signal into a smooth analog baseband signal, load the analog baseband signal onto a high-frequency carrier signal through envelope modulation technology to generate a radio frequency modulation signal, and rectify the radio frequency modulation signal into two low-frequency DC signals, which are output to the two bases of the bidirectional BJT device respectively.

2. The driving circuit of the bidirectional BJT solid-state circuit breaker according to claim 1, characterized in that: The adaptive adjustment submodule includes: a detection unit, the detection unit being configured to detect current state information of the bidirectional BJT device and perform data fusion processing on the current state information to obtain the current operating condition data, wherein the current state information includes current information, temperature information, and electromagnetic interference information; An adaptive regulator is used to receive the current operating condition data, generate an operating condition feature vector according to the current operating condition data, input the operating condition feature vector into a pre-trained long short-term memory network, and obtain a target base voltage of the bidirectional BJT device.

3. The driving circuit of the bidirectional BJT solid-state circuit breaker according to claim 2, characterized in that: The detection unit includes: a current sensor, a temperature sensor, and an electromagnetic interference sensor; The current sensor is used to detect the collector current of the bidirectional BJT device; The temperature sensor is used to detect the temperature information of the bidirectional BJT device; The method is used to detect electromagnetic interference information in the area where the bidirectional BJT device is located.

4. The driving circuit of the bidirectional BJT solid-state circuit breaker according to claim 2, wherein: The current state information also includes feedback information of the microwave driving module; the adaptive adjustment submodule also includes: a feedback unit, which is used to receive a feedback signal output by the microwave driving module and determine the feedback information based on the feedback signal, wherein the feedback information includes attribute information of the low-frequency DC signal.

5. The driving circuit of the bidirectional BJT solid-state circuit breaker according to claim 1, characterized in that: The microwave driving module includes: a radio frequency oscillator, a radio frequency modulator and a radio frequency rectification circuit; The radio frequency oscillator is used to generate the high frequency carrier signal; The input end of the radio frequency modulator is connected to the radio frequency oscillator and the fuzzy controller respectively, and the radio frequency modulator is used to convert the target control signal into the analog baseband signal and modulate it onto the high frequency carrier signal to generate the radio frequency modulated signal; The RF rectifier circuit is connected to the output end of the RF modulator, and is used to rectify the RF modulated signal and output two low-frequency DC signals to the two bases of the bidirectional BJT device respectively.

6. The driving circuit of the bidirectional BJT solid-state circuit breaker according to claim 5, characterized in that: The radio frequency rectification circuit includes: a Wilkinson power divider and a radio frequency rectification unit; The input end of the Wilkinson power splitter is connected to the output end of the radio frequency modulator, and the Wilkinson power splitter is used to distribute the power of the radio frequency modulated signal and output two power split signals; The RF rectifier unit is connected to the two output ends of the Wilkinson power divider respectively, and is used to rectify the two power split signals respectively, and output two low-frequency DC signals to the two bases of the bidirectional BJT device respectively.

7. A bidirectional BJT solid-state circuit breaker, characterized in that: The bidirectional BJT solid-state circuit breaker comprises: a bidirectional BJT device, connected to the power supply line, and used to switch the power supply line on and off; The drive circuit according to any one of claims 1 to 6, wherein the drive circuit is connected to the base of the bidirectional BJT device, and the drive circuit is used to output two low-frequency DC signals to the two bases of the bidirectional BJT device to control the on and off of the bidirectional BJT device.

8. The bidirectional BJT solid-state circuit breaker according to claim 7, characterized in that: The bidirectional BJT solid-state circuit breaker further includes: a pre-shutdown circuit and a processing circuit; The processing circuit is connected to the pre-shutdown circuit, and is used to control the conduction status of the pre-shutdown circuit in the pre-shutdown stage, so as to form a charge release path of the bidirectional BJT device through the pre-shutdown circuit.

9. The bidirectional BJT solid-state circuit breaker according to claim 8, characterized in that: The pre-shutdown circuit includes: a first MOS transistor, a second MOS transistor, a third MOS transistor and a fourth MOS transistor; The first electrode of the first MOS transistor is connected to the first output terminal of the driving circuit, the second electrode of the first MOS transistor is connected to the first base of the bidirectional BJT device, and the gate of the first MOS transistor is connected to the processing circuit; The first electrode of the second MOS transistor is connected to the collector of the bidirectional BJT device, the second electrode of the second MOS transistor is connected to the first base of the bidirectional BJT device, and the gate of the second MOS transistor is connected to the processing circuit; The first electrode of the third MOS transistor is connected to the second output terminal of the driving circuit, the second electrode of the third MOS transistor is connected to the second base of the bidirectional BJT device, and the gate of the third MOS transistor is connected to the processing circuit; The first electrode of the fourth MOS transistor is connected to the emitter of the bidirectional BJT device, the second electrode of the fourth MOS transistor is connected to the second base of the bidirectional BJT device, and the gate of the fourth MOS transistor is connected to the processing circuit.

10. The bidirectional BJT solid-state circuit breaker according to claim 9, characterized in that: In the pre-shutdown stage, the first MOS transistor and the third MOS transistor are in a disconnected state, and the second MOS transistor and the fourth MOS transistor are in a turned-on state.

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