Substrate processing apparatus, method for manufacturing semiconductor device, and program

Abstract

A substrate processing apparatus includes: a processing chamber for processing a substrate; a first gas supply unit that supplies a first gas to a first region in the processing chamber; a second gas supply unit that supplies a second gas to a second region different from the first region in the processing chamber; and a control unit configured so as to be able to control the first gas supply unit and the second gas supply unit such that the second gas is supplied such that the pressure difference between the first region and the second region becomes small when the first gas is supplied by flash flow.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a program. Background Art

[0002] As one type of substrate processing device used in the manufacturing process of a semiconductor device, there is, for example, a substrate processing device with the following structure: a plurality of substrates are processed simultaneously while being accommodated in a substrate holder, and heat transfer in the vertical direction is reduced by a heat insulation component arranged below the substrate holder (for example, Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: International Publication No. 2019 / 058553 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] The present disclosure provides a technology capable of uniformly processing a plurality of substrates.

[0008] Means for solving problems

[0009] According to one embodiment of the present disclosure, a technology is provided, comprising:

[0010] a processing chamber for processing a substrate;

[0011] a first gas supply unit for supplying a first gas to a first area within the processing chamber;

[0012] a second gas supply unit that supplies a second gas to a second region different from the first region in the processing chamber; and

[0013] The control unit is configured to control the first gas supply unit and the second gas supply unit so that the second gas is supplied so that the pressure difference between the first region and the second region becomes small when the first gas is supplied in a flash flow.

[0014] Effects of the Invention

[0015] According to one aspect of the present disclosure, it is possible to provide a technique capable of uniformly processing a plurality of substrates. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is an explanatory diagram showing a schematic configuration example of a substrate processing apparatus according to one embodiment of the present disclosure.

[0017] Figure 2(A) is an explanatory diagram showing an example of a first processing gas supply system according to one embodiment of the present invention, (B) is an explanatory diagram showing an example of a second processing gas supply system according to one embodiment of the present invention, and (C) is an explanatory diagram showing an example of an inert gas supply system according to one embodiment of the present invention.

[0018] Figure 3 This is an explanatory diagram showing an example of a processing gas supply system in a substrate processing apparatus according to one embodiment of the present disclosure.

[0019] Figure 4 This is a block diagram showing a functional configuration example of a controller in a substrate processing apparatus according to one embodiment of the present disclosure.

[0020] Figure 5 This is a flowchart illustrating a substrate processing flow according to one embodiment of the present disclosure.

[0021] Figure 6 This is a flowchart for explaining a specific example of the control process during gas supply according to one embodiment of the present disclosure.

[0022] Figure 7 This is a flowchart for explaining another specific example of the control process during gas supply according to one embodiment of the present disclosure.

[0023] Figure 8 This is a flowchart for explaining still another specific example of the control process during gas supply according to one embodiment of the present disclosure.

[0024] Figure 9 This is a flowchart for explaining still another specific example of the control process during gas supply according to one embodiment of the present disclosure. DETAILED DESCRIPTION

[0025] The following describes embodiments of the present invention with reference to the accompanying drawings. The drawings used in the following description are schematic, and the dimensional relationships and proportions of the elements shown in the drawings may not necessarily correspond to reality. Furthermore, the dimensional relationships and proportions of the elements shown in the drawings may not necessarily correspond to reality.

[0026] (1) Structure of substrate processing apparatus

[0027] use Figure 1 The structure of a substrate processing apparatus according to one embodiment of the present disclosure will be described.

[0028] (Overall structure)

[0029] The substrate processing apparatus 10 generally includes a reaction tube storage chamber 206 and a transfer chamber 217 . The reaction tube storage chamber 206 is disposed above the transfer chamber 217 .

[0030] (Reaction tube storage room)

[0031] The reaction tube storage chamber 206 includes a vertically extending cylindrical reaction tube 210, a heater 211 as a heating unit (furnace body) provided on the outer periphery of the reaction tube 210, a process gas supply structure 212 as a first gas supply unit, and a gas exhaust structure 213 as an exhaust unit. Herein, the reaction tube 210 is also referred to as a process chamber, and the space within the reaction tube 210 is also referred to as a process space.

[0032] The reaction tube 210 can accommodate a substrate holder (substrate holder) 300, described later. Specifically, the substrate holder 300 holding the substrate S is loaded into the processing chamber 201 formed by the reaction tube 210. The substrate S is then processed in the processing chamber 201. Therefore, the processing gas supply structure 212, the interior of the reaction tube 210, and the gas exhaust structure 213 are horizontally connected.

[0033] The process gas supply structure 212 is located to the side of the reaction tube 210 and upstream in the gas flow direction. Gas is supplied from the process gas supply structure 212 into the reaction tube 210, i.e., the processing chamber 201, and gas is supplied horizontally to the substrate S. The gas exhaust structure 213 is located to the side of the reaction tube 210 and downstream in the gas flow direction. Gas within the reaction tube 210 is exhausted from the gas exhaust structure 213. The gas exhaust structure 213 is disposed opposite the process gas supply structure 212, with the reaction tube 210 sandwiched between them.

[0034] An upstream-side rectifying section 214 is provided on the upstream side of the reaction tube 210 between the reaction tube 210 and the process gas supply structure 212 to regulate the flow of the gas supplied from the process gas supply structure 212. Furthermore, a downstream-side rectifying section 215 is provided on the downstream side of the reaction tube 210 between the reaction tube 210 and the gas exhaust structure 213 to regulate the flow of the gas exhausted from the reaction tube 210. The lower end of the reaction tube 210 is supported by a manifold 216.

[0035] Specifically, the reaction tube housing chamber 206 includes a reaction tube 210, an upstream rectifying section 214, and a downstream rectifying section 215. The first gas supply unit may also include the upstream rectifying section 214 and nozzles 223 and 224, described below. Furthermore, the exhaust unit may also include the downstream rectifying section 215.

[0036] The reaction tube 210, upstream rectifying section 214, and downstream rectifying section 215 are a continuous structure, formed from materials such as quartz and SiC. They are constructed from heat-transmitting components that transmit heat radiated from the heater 211. Heat from the heater 211 heats the substrate S and the gas. The heater 211 is, for example, a resistance heater with controllable on / off and heating temperature. It is positioned to the side of the processing chamber 201 and is configured to heat the processing chamber 201.

[0037] The processing chamber 201, comprised of a reaction tube 210, comprises a processing area A, where substrates S are processed, and a heat-insulating area B, located below the processing area A. When the substrate holder 300 is loaded into the processing chamber 201, a heat-insulating section 502 (described later) is disposed therein as a heat-insulating structure. The heat-insulating section 502 is also referred to as a heat-insulating assembly.

[0038] Thus, within the processing chamber 201, there are a processing region A, serving as a first region to which gas is supplied from the processing gas supply structure 212, and a second, heat-insulating region B, serving as a different region from the first region. The processing region A, serving as the first region, functions as a substrate processing region for processing a substrate S. Furthermore, when the substrate holder 300 is loaded, as described later, the processing region A (i.e., the substrate processing region) becomes the substrate holding region corresponding to the region where the substrate S is held by the substrate holder 300. Meanwhile, the heat-insulating region B, serving as the second region, functions as a heat-insulating region provided at the bottom of the substrate holder 300 for the heat-insulating portion 502, described later.

[0039] Furthermore, the processing area A and the heat-insulating area B are arranged so as to be in contact with each other in the reaction tube 210. However, this is not necessarily limited thereto, and they may be separated from each other, or may be arranged so that parts of them overlap with each other.

[0040] (Processing gas supply structure)

[0041] The processing gas supply structure 212 is connected to the gas supply pipe 251 and the gas supply pipe 261. In addition, the processing gas supply structure 212 has a distribution unit 125 for distributing the gas supplied from each gas supply pipe. Nozzles 223 and nozzles 224 are provided on the downstream side of the distribution unit 125. A plurality of nozzles 223 and 224 are connected to the downstream side of the gas supply pipe 251 and the gas supply pipe 261 via the distribution unit 125. The nozzles 223 and the nozzles 224 are arranged in a substantially horizontal manner. In addition, a plurality of these nozzles 223 and 224 are arranged in the vertical direction, respectively, at positions corresponding to the substrate S. When the substrate S is present in the processing chamber 201, the processing gas is supplied from the side of the substrate S.

[0042] The distribution unit 125 is configured to supply individual gases from the gas supply pipe 251 to the plurality of nozzles 223, and from the gas supply pipe 261 to the plurality of nozzles 224. For example, the gas flow paths are configured based on the combination of the individual gas supply pipes and nozzles. This prevents the gases supplied from the various gas supply pipes from mixing, thereby suppressing the generation of reaction byproducts (also known as particles) that could result from gas mixing in the distribution unit 125.

[0043] (Upstream side rectification section, downstream side rectification section)

[0044] An upstream side rectifying unit 214 is disposed between the processing gas supply structure 212 and the reaction tube 210 .

[0045] The upstream rectifying section 214 includes a housing 227 and a partition plate 226. The partition plate 226 extends horizontally. The horizontal direction herein refers to the direction of the side wall of the housing 227. Multiple partition plates 226 are arranged in the vertical direction. The partition plates 226 are fixed to the side wall of the housing 227 and are configured so that gas does not flow beyond the partition plates 226 to adjacent areas below or above. This prevents the gas from flowing beyond the partition plates 226, thereby reliably forming the airflow described later.

[0046] The partition plates 226 are provided at positions corresponding to the respective substrates S. The nozzles 223 and 224 are arranged between the partition plates 226 and between the partition plates 226 and the housing 227 .

[0047] The gas ejected from the nozzles 223 and 224 is supplied to the surface of the substrate S. In other words, the gas is supplied laterally from the substrate S as viewed from the substrate S. The partition plate 226 is a continuous structure extending horizontally and having no holes. This suppresses the vertical movement of the main flow of gas, allowing it to flow horizontally. Consequently, the pressure loss of the gas reaching each substrate S can be made uniform in the vertical direction.

[0048] A downstream-side rectifying section 215 is disposed downstream of the reaction tube 210 in the gas flow direction, that is, between the reaction tube 210 and the gas exhaust structure 213 .

[0049] The downstream side rectifying portion 215 is configured such that, when the substrate S is held by the substrate holder 300 serving as a substrate holding portion for holding the substrate S, the top portion is higher than the uppermost substrate S and the bottom portion is lower than the lowermost substrate S arranged on the substrate holder 300 .

[0050] The downstream rectifying section 215 includes a housing 231 and a partition plate 232. The partition plate 232 extends horizontally. The horizontal direction herein refers to the direction of the side wall of the housing 231. Furthermore, multiple partition plates 232 are arranged in the vertical direction. The partition plates 232 are fixed to the side wall of the housing 231 and are configured so that the gas does not flow beyond the partition plates 232 and move to adjacent areas below or above. This prevents the gas from flowing beyond the partition plates 232, thereby reliably forming the airflow described later.

[0051] The upstream rectifying section 214 communicates with the space of the downstream rectifying section 215 via the processing chamber 201. The top of the housing 227 is configured to be at the same height as the top of the housing 231. The bottom of the housing 227 is configured to be higher than the bottom of the housing 231.

[0052] The dividing plate 232 is arranged at a position corresponding to each substrate S and at a position corresponding to each dividing plate 226. The corresponding dividing plates 226 and dividing plates 232 are preferably set to the same height. In addition, when processing the substrate S, it is preferred to make the height of the substrate S consistent with the height of the dividing plates 226 and the dividing plates 232. By setting it to such a structure, the gas supplied from each nozzle forms a horizontal flow passing through the substrate S and the dividing plate 232 as shown by the arrows in the figure. By setting the dividing plate 232 to such a structure, the pressure loss of the gas discharged from each substrate S can be made uniform. Therefore, the flow of the gas flow through each substrate S in the vertical direction is suppressed, and an air flow is formed in the horizontal direction toward the gas exhaust structure 213.

[0053] By setting the dividing plate 226 and the dividing plate 232, the pressure loss can be made uniform in the vertical direction upstream and downstream of each substrate S. Therefore, a horizontal airflow that suppresses the flow in the vertical direction can be reliably formed throughout the dividing plate 226, the substrate S, and the dividing plate 232.

[0054] Specifically, a partition plate 226 is provided for each of the plurality of substrates S, and the space defined by the housing 227 and the partition plate 226 serves as a plurality of gas supply holes for supplying processing gas toward the upper surface of the substrates S. Furthermore, a partition plate 232 is provided for each of the plurality of substrates S, and the space defined by the housing 231 and the partition plate 232 serves as a plurality of second exhaust holes for connecting the processing chamber 201 with the second exhaust pipe 281. By providing gas supply holes and second exhaust holes for each substrate S, the uniformity of processing across the plurality of substrates S can be improved.

[0055] (Gas exhaust structure)

[0056] The gas exhaust structure 213 is provided downstream of the downstream side rectifying section 215. The gas exhaust structure 213 is mainly composed of a shell 241 and an exhaust hole 244. The gas exhaust structure 213 has a buffer section 242 which is a space for the gas exhausted from each second exhaust hole serving as the partition plate 232 to merge and be exhausted by the exhaust system 280 described later. In this way, the gas exhausted from each second exhaust hole is made uniform in flow rate by the buffer section 242, which can improve the uniformity of processing of multiple substrates S. The exhaust hole 244 is formed on the downstream side and lower side or horizontal direction of the shell 241. The exhaust pipe 281 is connected to the processing chamber 201 via the exhaust hole 244.

[0057] The gas exhaust structure 213 is connected to the space of the downstream side rectifying section 215. The housing 231 and the housing 241 are formed in a highly continuous structure. The top of the housing 231 is configured to be at the same height as the top of the housing 241, and the bottom of the housing 231 is configured to be at the same height as the bottom of the housing 241.

[0058] The gas exhaust structure 213 is provided in the lateral direction of the reaction tube 210 , and is a lateral exhaust structure for exhausting gas in the lateral direction of the substrate S.

[0059] The bottom surface of the housing 231 is configured so that a thermocouple 500 can be installed. By configuring the bottom of the housing 231 to be lower than the bottom of the housing 227 and by configuring the space of the downstream rectifying section 215 to be wider than the space of the upstream rectifying section 214, a space for installing the thermocouple 500 can be ensured, and the inert gas supplied to the insulating section 502 and the atmosphere of the insulating area B (including reaction byproducts) can be prevented from flowing into the processing area A. The vertical flow of the gas passing through each substrate S is suppressed, and the gas flow is formed in a horizontal direction toward the gas exhaust structure 213.

[0060] That is, the gas having passed through the downstream side rectifying portion 215 is exhausted from the exhaust hole 244. At this time, since the gas exhaust structure 213 does not have a structure such as a partition plate, an airflow including a vertical direction is formed toward the exhaust hole 244.

[0061] (Substrate holder)

[0062] The substrate holder 300 housed in the reaction tube 210 includes a partition plate holding portion 310 and a base portion 311 .

[0063] A plurality of circular partition plates 314 are fixed to the partition plate holder 310 at predetermined intervals. Furthermore, the partition plates 314 are configured to hold substrates S at predetermined intervals. The partition plates 314 are positioned directly below the substrates S, either above or below the substrates S, or both. The partition plates 314 block the spaces between the substrates S.

[0064] A plurality of substrates S are stacked vertically at predetermined intervals and held on the substrate holder 300. The predetermined intervals between the plurality of substrates S placed on the substrate holder 300 are the same as the upper and lower intervals between the partition plates 314 fixed to the partition plate holder 310. Furthermore, the diameter of the partition plates 314 is formed to be larger than the diameter of the substrates S.

[0065] The substrate holder 300 holds multiple substrates S, for example, five, in layers along the vertical direction. By processing multiple substrates S at once, productivity can be improved. While this example shows an example of five substrates S being held by the substrate holder 300, the present invention is not limited thereto. For example, the substrate holder 300 can also be configured to hold approximately 5 to 50 substrates S.

[0066] In this specification, the expression "5 to 50 sheets" in a numerical range means that both the lower limit and the upper limit are included in the range. Thus, for example, "5 to 50 sheets" means "5 or more and 50 or less." The same applies to other numerical ranges.

[0067] By loading such a substrate holder 300 into the processing chamber 201, the substrate S held by the substrate holder 300 can be positioned in the processing area A within the processing chamber 201, and a thin film can be formed on the surface of the substrate S. Furthermore, within the transfer chamber 217 (described in detail later), the substrate S held by the substrate holder 300 can be transferred by a vacuum transfer robot (not shown) through a substrate transfer port (not shown), and the transferred substrate S can be transferred into the reaction tube 210 to form a thin film on the surface of the substrate S. The substrate transfer port is provided, for example, on a side wall of the transfer chamber 217.

[0068] (Insulation)

[0069] In the reaction tube 210 , a heat insulating portion 502 is provided below the substrate holder 300 .

[0070] The heat insulating portion 502 is composed of a hollow container with a cylindrical outer wall (i.e., outer surface). Its hollow structure functions as a heat insulating component. Positioning the heat insulating portion 502 below the substrate holder 300 can suppress temperature drops in the substrates S held below the substrate holder 300. This improves both the uniformity of processing across multiple substrates S and the uniformity of processing within the surface of the substrates S.

[0071] The heat insulating portion 502 is supported by the support portion 441. The support member 440 for supporting the substrate holder 300 penetrates the center of the support portion 441 in a concentric circle.

[0072] A gas supply hole 291 is formed in the wall of the reaction tube 210 (i.e., the processing chamber 201) below the processing chamber 201 of the reaction tube 210, lateral to the insulation 502 and below the upper end of the insulation 502 when the substrate holder 300 is loaded into the reaction tube 210. A gas supply pipe 292 is connected to the gas supply hole 291. Inert gas is supplied from the gas supply pipe 292 to the space between the inner wall of the reaction tube 210 (i.e., the processing chamber 201) and the outer surface of the insulation 502 from the side of the insulation 502. In other words, the gas supply hole 291 and the gas supply pipe 292 are provided in the lower portion of the processing chamber 201, forming a second gas supply unit that supplies gas from the lower portion of the processing chamber 201 to the insulation region B, which serves as the second region.

[0073] The gas supply holes 291 and the gas supply pipe 292 constituting the second gas supply portion are provided at positions facing the gas exhaust structure 213 serving as the exhaust portion across the reaction tube 210 (ie, the processing chamber 201 ).

[0074] (Transfer Room)

[0075] A transfer chamber 217 is provided below the reaction tube storage chamber 206 via a manifold 216 located below the reaction tube 210. In the transfer chamber 217, substrates S are placed (loaded) on a substrate holder (hereinafter sometimes referred to as a wafer boat) 300 via a substrate loading port by a vacuum transfer robot, or substrates S are removed from the substrate holder 300 by a vacuum transfer robot.

[0076] The transfer chamber 217 can accommodate a vertical driving mechanism 400 for driving the substrate holder 300 and the partition plate holder 310 in the vertical direction. Figure 1 In the figure, the substrate holder 300 is raised by the vertical drive mechanism 400, indicating that it is housed within the reaction tube 210. Furthermore, when the substrate holder 300 is housed within the reaction tube 210, a heat insulator 502 is disposed below the reaction tube 210. The heat insulator 502 forms a heat-insulating region B below the processing chamber 201. This reduces heat conduction to the transfer chamber 217 within the processing chamber 201.

[0077] The vertical driving mechanism 400 includes a rotation driving mechanism 430 that rotates the substrate holder 300 and the partition plate holder 310 together, and a boat vertical mechanism 420 that drives the substrate holder 300 vertically relative to the partition plate holder 310 .

[0078] The rotation drive mechanism 430 and the boat vertical mechanism 420 are fixed to a base flange 401 serving as a cover. The base flange 401 is supported on a base plate 402 via side plates 403 .

[0079] An O-ring 446 is provided on the upper surface of the base flange 401. Figure 1 As shown, the upper surface of the susceptor flange 401 is driven by the vertical drive motor 410 to rise to a position where it contacts the transfer chamber 217 , thereby making it possible to keep the interior of the reaction tube 210 airtight.

[0080] A hole 401a is formed in the center of the base flange 401, extending through the support member 440, which supports the heat insulating portion 502 from below, and the support member 441, which supports the substrate holder 300 from below. An annular space is formed between the hole 401a and the support member 440. A gas supply pipe 701 is connected to this annular space. Inert gas is supplied from the gas supply pipe 701, from below the heat insulating portion 502 to the upper surface of the base flange 401 and the periphery of the support member 440.

[0081] (Gas supply system)

[0082] Next, the gas supply system will be described in detail.

[0083] The gas supply system includes a process gas supply system for supplying gas to the process area A and an inert gas supply system for supplying gas to the insulation area B. The process gas supply system supplies the process gas as the first gas to the process area A, and functions as a first gas supply unit together with the process gas supply structure 212 described above. The inert gas supply system supplies the inert gas as the second gas to the insulation area B, and functions as a second gas supply unit together with the gas supply holes 291 and gas supply pipe 292 described above. The inert gas supply system, serving as the second gas supply unit, is located in the lower portion of the process chamber 201 and supplies the inert gas from the lower portion of the process chamber 201.

[0084] Furthermore, the process gas supply system includes a first process gas supply system that supplies gas through the gas supply pipe 251 and a second process gas supply system that supplies gas through the gas supply pipe 261 .

[0085] Below, use Figure 2 and Figure 3 These gas supply systems will be described in sequence.

[0086] (First Process Gas Supply System)

[0087] The first process gas supply system 250 in the process gas supply system (ie, the first gas supply unit) supplies gas to the process area A through the gas supply pipe 251. Figure 2 (A) and Figure 3 As shown, a gas supply pipe 251 is provided with, in order from upstream, a first gas source 252, a mass flow controller (MFC) 253 serving as a flow controller (flow control unit), a valve 254 serving as an on-off valve, a tank 259 serving as a storage unit for storing gas (hereinafter also referred to as a "first flash tank"), and a valve 275. A digital gauge 251a may also be connected to the gas supply pipe 251.

[0088] The first gas source 252 is a source of a first process gas containing a first element (also referred to as "first element-containing gas"). The first element-containing gas is a raw material gas, that is, one of the process gases.

[0089] The first process gas supply system 250 (also referred to as a silicon-containing gas supply unit) is mainly composed of the gas supply pipe 251, the MFC 253, the valve 254, the first flash tank 259, and the valve 275. The first process gas supply system 250 may also include the first gas source 252.

[0090] A gas supply pipe 255 is connected to the gas supply pipe 251 downstream of the valve 254 and upstream of the first flash tank 259. An inert gas source 256, an MFC 257, and a valve 258 are provided in this order from the upstream side of the gas supply pipe 255. An inert gas, such as nitrogen (N2), is supplied from the inert gas source 256.

[0091] The inert gas supply unit 255a is primarily comprised of a gas supply pipe 255, an MFC 257, and a valve 258. The inert gas supplied from an inert gas source 256 serves as a purge gas to remove gas trapped within the reaction tube 210 during the substrate processing process. The inert gas source 256 may be incorporated into the inert gas supply unit 255a. Alternatively, the inert gas supply unit 255a may be incorporated into the first processing gas supply system 250.

[0092] (Second Process Gas Supply System)

[0093] The second process gas supply system 260 in the process gas supply system (i.e., the first gas supply unit) supplies gas to the process area A through the gas supply pipe 261. Figure 2 (B) and Figure 3 As shown, a second gas source 262, an MFC 263, a valve 264, a tank 269 (hereinafter also referred to as a "second flash tank") serving as a storage unit for storing gas, and a valve 276 are provided in order from upstream on the gas supply pipe 261. A digital gauge 261a may also be connected to the gas supply pipe 261.

[0094] The second gas source 262 is a source of a second process gas containing a second element (hereinafter also referred to as "second element-containing gas"). The second process gas is one of the process gases. In addition, the second process gas can also be considered a reaction gas or a reforming gas.

[0095] The second process gas supply system 260 is mainly composed of the gas supply pipe 261, the MFC 263, the valve 264, the second flash tank 269, and the valve 276. The second process gas supply system 260 may also include a second gas source 262.

[0096] A gas supply pipe 265 is connected to the downstream side of the valve 264 in the gas supply pipe 261. The gas supply pipe 265 is provided with an inert gas source 266, an MFC 267, and a valve 268 in this order from the upstream direction. The inert gas source 266 supplies an inert gas, such as N2 gas.

[0097] The inert gas supply unit 265a is primarily comprised of a gas supply pipe 265, an MFC 267, and a valve 268. The inert gas supplied from an inert gas source 266 functions as a purge gas to remove gas trapped within the reaction tube 210 during the substrate processing process. The inert gas source 266 may be incorporated into the inert gas supply unit 265a. Alternatively, the inert gas supply unit 265a may be incorporated into the second process gas supply system 260.

[0098] (Inert gas supply system)

[0099] The inert gas supply system 270 (i.e., the second gas supply unit) supplies gas to the insulation area B through the gas supply pipe 292. Figure 2 As shown in FIG. 2 (C), an inert gas source 272, an MFC 273, a valve 274, a tank 279 (hereinafter also referred to as a "third flash tank") serving as a storage portion for storing stored gas, and a valve 277 are provided in this order from the upstream direction on the gas supply pipe 271. An inert gas, such as N2 gas, is supplied from the inert gas source 272.

[0100] The inert gas supply system 270 is mainly composed of a gas supply pipe 271, an MFC 273, a valve 274, a third flash tank 279, and a valve 277. The inert gas supply system 270 may include an inert gas source 272. The inert gas supply system 270 is configured to supply inert gas toward the insulation region B where the insulation portion 502 is located. When the substrate holder 300 is loaded into the processing chamber 201, the inert gas supplied from the inert gas source 272 functions as a purge gas capable of purging the interior of the insulation portion 502 and the surrounding area of ​​the insulation region B disposed below the processing chamber 201.

[0101] In addition to the gas supply pipe 292, the inert gas supply system 270 also has the same structure as the gas supply pipe 701 (although not shown). Furthermore, by supplying inert gas through the gas supply pipe 701, the inside and the periphery of the insulating portion 502 constituting the insulating region B disposed below the processing chamber 201 can be purged.

[0102] (Exhaust System)

[0103] Next, use Figure 1 The gas exhaust system will be described.

[0104] The gas exhaust system 280 functions together with the gas exhaust structure 213 as an exhaust unit for exhausting the atmosphere in the reaction tube 210 through the exhaust pipe 281. Figure 1 As shown, the exhaust pipe 281 is connected to a vacuum pump 284 as a vacuum exhaust device via a valve 282 and an APC (Auto Pressure Controller) valve 283 as a pressure regulator (pressure adjustment unit), and is configured to be able to perform vacuum exhaust so that the pressure in the reaction tube 210 becomes a specified pressure (vacuum degree).

[0105] The exhaust pipe 281, valve 282, and APC valve 283 constitute a gas exhaust system 280, which serves as an exhaust unit for exhausting gas from the process chamber 201. The gas exhaust system 280 may also include a vacuum pump 284. Specifically, the gas exhaust system 280 includes the exhaust pipe 281, which communicates with the process chamber 201 of the reaction tube 210, and is configured to exhaust the atmosphere in the process chamber 201 via the exhaust pipe 281. The gas exhaust system 280 is configured to exhaust the process gas from a direction different from the direction from which the process gas is supplied.

[0106] Furthermore, the gas exhaust system 280 exhausts the atmosphere within the processing chamber 201. The atmosphere within the processing chamber 201 includes, in addition to the atmosphere of the processing gas supplied to the processing area A from the first gas supply system 250 and the second gas supply system 260 as the processing gas supply system, an atmosphere of the inert gas supplied to the insulation area B from the inert gas supply system 270 through the gas supply pipes 292 and 701.

[0107] That is, the process gas supplied to the process area A of the process chamber 201 and the inert gas supplied to the insulation area B of the process chamber 201 are exhausted respectively through the exhaust pipe 281 .

[0108] (Controller)

[0109] Next, use Figure 4 A controller serving as a control unit (control unit) of the substrate processing apparatus 10 will be described.

[0110] The substrate processing apparatus 10 includes a controller 600 that controls the operation of each unit of the substrate processing apparatus 10 .

[0111] The controller 600 is configured as a computer including a CPU (Central Processing Unit) 601, a RAM (Random Access Memory) 602, a storage device 603 as a storage unit, and an I / O port 604. The RAM 602, the storage device 603, and the I / O port 604 are configured to exchange data with the CPU 601 via an internal bus 605. Data transmission and reception within the substrate processing apparatus 10 is performed by instructions from a transmission and reception instruction unit 606, which is also a function of the CPU 601.

[0112] The controller 600 is provided with a network transceiver 683 connected to the host device 670 via a network. The network transceiver 683 can receive, from the host device 670, processing history information and processing schedule information of the substrates S stored in the cassette.

[0113] The storage device 603 is composed of, for example, a flash memory or a hard disk drive (HDD). The storage device 603 stores processing conditions for each type of substrate processing. Specifically, the storage device 603 stores, in a readable manner, a control program for controlling the operation of the substrate processing apparatus 10 and a process recipe describing the substrate processing procedures and conditions.

[0114] In addition, the process recipe is a combination of processes in the substrate processing step described later by the controller 600 to obtain a predetermined result, and functions as a program. Hereinafter, the process recipe, control program, etc. are collectively referred to as a program. In addition, when the term "program" is used in this specification, there are cases where only the process recipe alone is included, only the control program alone is included, or both are included. In addition, the RAM 602 is configured as a storage area (work area) for temporarily storing programs, data, etc. read by the CPU 601.

[0115] The I / O port 604 is connected to each component of the substrate processing apparatus 10 .

[0116] The CPU 601 is configured to read and execute a control program from the storage device 603 and to read a process recipe from the storage device 603 in response to input of an operation command from the input / output device 681. Furthermore, the CPU 601 is configured to control the substrate processing apparatus 10 in accordance with the contents of the read process recipe. Furthermore, the CPU 601 is configured to control the amount and timing of gas supply to the processing area A, the insulation area B, and the like, depending on the type and conditions of substrate processing.

[0117] The CPU 601 has a sending and receiving instruction unit 606. The controller 600 can constitute the controller 600 of this embodiment by installing the program on a computer or the like using an external storage device (for example, a magnetic disk such as a hard disk, an optical disk such as a DVD, an optical magnetic disk such as an MO, a semiconductor memory such as a USB memory) 682 that stores the above-mentioned program. In addition, the unit for supplying the program to the computer is not limited to the case where it is supplied via the external storage device 682. For example, a communication unit such as the Internet or a dedicated line can also be used instead of supplying the program via the external storage device 682. In addition, the storage device 603 and the external storage device 682 are configured as computer-readable storage media. Hereinafter, they will be collectively referred to as storage media. In addition, in this specification, when the term storage medium is used, there is a case where only the storage device 603 alone is included, a case where only the external storage device 682 alone is included, or a case where both are included.

[0118] (2) Substrate processing step (substrate processing method)

[0119] Next, as one step of a semiconductor manufacturing process (a method of manufacturing a semiconductor device), a process of forming a film on a substrate S using the substrate processing apparatus 10 having the above-described structure will be described. In the following description, the controller 600 controls the operation of each component constituting the substrate processing apparatus 10 .

[0120] Here, use Figure 5 A film forming process of forming a film on the substrate S by using a first process gas and a second process gas as process gases and supplying them alternately will be described.

[0121] The term "substrate" used in this specification may mean the substrate itself or a laminate of a substrate and a predetermined layer or film formed on its surface. The term "surface of the substrate" used in this specification may mean the surface of the substrate itself or the surface of a predetermined layer, etc. formed on the substrate. When it is stated in this specification that "a predetermined layer is formed on the substrate", it may mean that the predetermined layer is directly formed on the surface of the substrate itself or that the predetermined layer is formed on a layer, etc. formed on the substrate. The use of the term "substrate" in this specification has the same meaning as the use of the term "wafer".

[0122] (Transfer Chamber Pressure Adjustment Step: S10)

[0123] First, the transfer chamber pressure adjustment step ( S10 ) will be described. Here, the pressure in the transfer chamber 217 is set to the same level as the pressure in the vacuum transfer chamber (not shown) adjacent to the transfer chamber 217 .

[0124] (Substrate loading process: S11)

[0125] Next, the substrate loading step ( S11 ) will be described. After the transfer chamber 217 reaches the vacuum level, the transfer of the substrate S begins. After the substrate S arrives at the vacuum transfer chamber, the gate valve is released, and the vacuum transfer robot loads the substrate S into the transfer chamber 217 .

[0126] At this time, the substrate holder 300 is on standby in the transfer chamber 217, and the substrates S are transferred to the substrate holder 300. After a predetermined number of substrates S have been transferred to the substrate holder 300, the vacuum transfer robot is retracted, and the substrate holder 300 is raised by the vertical drive mechanism 400, and the substrates S are moved into the processing chamber 201, which is the interior of the reaction tube 210. Multiple substrates S are moved into the processing chamber 201 in a vertically stacked state.

[0127] During the movement into the reaction tube 210 , the surface of the substrate S is positioned so as to coincide with the height of the partition plates 226 and 232 .

[0128] (Heating process: S12)

[0129] Next, the heating step ( S12 ) will be described. After the substrate S is loaded into the processing chamber 201 within the reaction tube 210 , the pressure within the reaction tube 210 is controlled to a predetermined level, and the heater 211 is controlled so that the surface temperature of the substrate S reaches a predetermined level. The temperature is, for example, between 400°C and 800°C, preferably between 500°C and 700°C. The pressure is, for example, between 50 and 5000 Pa.

[0130] (Membrane treatment step: S13)

[0131] Next, the film treatment step ( S13 ) is described. In the film treatment step ( S13 ), according to the process recipe, with the substrates S stacked on the substrate holder 300 housed in the processing chamber, gas is supplied to the substrates S to form a desired film on the substrates S.

[0132] For example, when performing gas supply based on the alternating supply process, a first step of supplying a first process gas into the reaction tube 210, a second step of supplying an inert gas into the reaction tube 210 and exhausting the atmosphere in the reaction tube 210, a third step of supplying a second process gas into the reaction tube 210, and a fourth step of supplying an inert gas into the reaction tube 210 and exhausting the atmosphere in the reaction tube 210 are sequentially performed. A desired film is formed on the substrate S by performing these steps in combination multiple times.

[0133] The supplied gas forms an airflow in the upstream rectifying section 214, the space above the substrate S, and the downstream rectifying section 215. At this time, the gas is supplied to the substrates S without pressure loss, so that the substrates S can be processed uniformly.

[0134] In addition, in the film processing step ( S13 ), the gas is supplied to the substrate S by so-called flash flow supply, and the details thereof will be described in detail later.

[0135] (Substrate unloading process: S14)

[0136] Next, the substrate unloading step ( S14 ) will be described. In the substrate unloading step ( S14 ), the processed substrate S is unloaded out of the transfer chamber 217 in the reverse order of the above-mentioned substrate loading step ( S11 ).

[0137] (Judgment: S15)

[0138] Next, the determination (S15) is described. Here, it is determined whether the substrate has been processed a predetermined number of times. If it is determined that the substrate has not been processed a predetermined number of times, the process returns to the substrate loading step (S11) and the next substrate S is processed. If it is determined that the substrate has been processed a predetermined number of times, the process ends.

[0139] In addition, in the above description, the airflow is formed horizontally, but as long as the mainstream of the gas is formed in the horizontal direction as a whole, the airflow can also be diffused in the vertical direction as long as it does not affect the uniform processing of multiple substrates.

[0140] In addition, in the above description, there are expressions such as the same, the same degree, equivalent, and equivalent, which of course include expressions that are substantially the same.

[0141] (3) Control processing during gas supply

[0142] Next, use Figure 2 and Figure 3 The process of supplying gas to the reaction tube 210 (processing chamber 201 ) in the film processing step ( S13 ) of the above-mentioned substrate processing step will be described.

[0143] In the film treatment step ( S13 ), for example, when performing gas supply based on an alternating supply process, the first, second, third, and fourth steps are sequentially performed as described above. Furthermore, in at least the first and third steps, the process gas is flash-flowed onto the substrate S. Each of these steps is described in detail below.

[0144] (First process)

[0145] In the first step, valve 254 is opened and valve 275 is closed, thereby charging the first process gas (raw material gas) into the first flash tank 259. For example, if the tank capacity is 1000cc, the first flash tank 259 is charged until the gas pressure reaches a range of 30 kPa to 50 kPa. This charging can be performed before the first step begins.

[0146] After the first flash tank 259 is filled with gas, the valve 275 is opened. This allows the first process gas stored in the first flash tank 259 to be supplied to the process chamber 210 at a high flow rate in a short period of time. Thus, in the first step, the first process gas is flash-fed.

[0147] Here, while the first process gas is being supplied to the processing chamber 201, the valve 254 may be in either an open or closed state. Alternatively, the valve 258 may be opened to allow an inert gas, such as N2 gas, to flow into the gas supply pipe 251 via the gas supply pipe 255. Furthermore, to prevent the first process gas from entering the gas supply pipe 261, the valve 268 may be opened to allow an inert gas to flow into the gas supply pipe 261.

[0148] The first processing gas supplied into the processing chamber 201 is supplied from the side of the substrate S in a horizontal direction relative to the substrate S through the gas supply structure 212 and is exhausted through the exhaust pipe 281 .

[0149] At this time, the APC valve 283 is adjusted so that the pressure in the reaction tube 210 is within a range of, for example, 1 to 3990 Pa. The temperature of the heater 211 is set so that the temperature of the substrate S is within a range of, for example, 100 to 1500° C. and is heated to a temperature between 400° C. and 800° C.

[0150] Specifically, within the processing chamber 201, while the substrate S loaded into the processing chamber 201 is heated, the first processing gas is supplied to the processing region A of the substrate S, and the valve 282 is opened to exhaust gas from the exhaust pipe 281. At this time, an inert gas is supplied to the insulating region B below the processing region A using the inert gas supply system 270, as will be described in detail later.

[0151] Silicon (Si)-containing gas, for example, can be used as the first processing gas supplied to the processing area A. For example, hexachlorodisilane (Si2Cl6, hexachlorodisilane, abbreviated as HCDS) gas, which is a gas containing Si and chlorine (Cl), can be used as the Si-containing gas.

[0152] (Second process)

[0153] In the second step, which is performed a predetermined time after the first step, the interior of the processing chamber 201 is purged. Therefore, in the second step, while valve 254 is closed to stop the supply of the first process gas, valves 258, 275, 268, 276, 274, 277, etc. are opened to supply an inert gas as a purge gas into the gas supply pipes 255, 265, 271, and 701. Furthermore, while valve 282 and APC valve 283 of the exhaust pipe 281 are open, the interior of the reaction tube 210 is evacuated by the vacuum pump 284.

[0154] (Third Process)

[0155] In the third step, which is performed a predetermined time after the start of the second step, valve 264 is first opened and valve 276 is closed, similar to the first step, to charge the second process gas (reactant gas or reforming gas) into the second flash tank 269. For example, if the tank capacity is 1000cc, the second flash tank 269 is charged until the gas volume reaches a range of 30 kPa to 50 kPa. This charging can be performed before the start of the first step.

[0156] After the second flash tank 269 is filled with gas, the valve 276 is opened. This allows the second process gas stored in the second flash tank 269 to be supplied to the process chamber 210 at a high flow rate in a short period of time. Thus, in the third step, the second process gas is supplied by flash flow.

[0157] Here, while the second process gas is being supplied to the processing chamber 201, the valve 264 may be in either an open or closed state. Alternatively, the valve 268 may be opened to allow an inert gas, such as N2 gas, to flow into the gas supply pipe 261 via the gas supply pipe 265. Furthermore, to prevent the second process gas from entering the gas supply pipe 251, the valve 258 may be opened to allow an inert gas to flow into the gas supply pipe 251.

[0158] The second process gas supplied into the process chamber 201 is supplied from the side of the substrate S in a horizontal direction relative to the substrate S through the gas supply structure 212 and is exhausted through the exhaust pipe 281 .

[0159] At this time, the APC valve 283 is adjusted so that the pressure in the reaction tube 210 is within a range of, for example, 1 to 3990 Pa. The temperature of the heater 211 is set so that the temperature of the substrate S is within a range of, for example, 100 to 1500° C., and is heated to a temperature between 400° C. and 800° C.

[0160] Specifically, within the processing chamber 201, while the substrate S loaded into the processing chamber 201 is heated, the second processing gas is supplied to the processing region A of the substrate S, and the valve 282 is opened to exhaust gas from the exhaust pipe 281. At this time, an inert gas is supplied to the insulating region B below the processing region A using the inert gas supply system 270, as will be described in detail later.

[0161] A reactive gas that reacts with the first process gas, such as a gas containing hydrogen (H) and nitrogen (N), can be used as the second process gas supplied to the process area A. Examples of the gas containing H and N include ammonia (NH3), diazene (N2H2) gas, hydrazine (N2H4) gas, and N3H8 gas.

[0162] (Fourth Process)

[0163] In the fourth step, which is performed a predetermined time after the third step, the interior of the processing chamber 201 is purged. Therefore, in the fourth step, while valve 264 is closed to stop the supply of the second process gas, valves 258, 275, 268, 276, 274, 277, etc. are opened to supply an inert gas as a purge gas into the gas supply pipes 255, 265, 271, and 701. Furthermore, while valve 282 and APC valve 283 of the exhaust pipe 281 are open, the interior of the reaction tube 210 is evacuated by the vacuum pump 284. This suppresses the reaction between the first process gas and the second process gas in the gas phase within the reaction tube 210.

[0164] (Repetition of each process)

[0165] The above-mentioned first to fourth steps are performed sequentially and non-simultaneously for a predetermined number of times (n times, where n is an integer greater than or equal to 1). Thus, a film of a predetermined thickness is formed on the substrate S. Here, for example, a silicon nitride (SiN) film is formed.

[0166] In the first and third steps of each of the first to fourth steps, the first process gas and the second process gas supplied to the processing chamber 201 form airflows in the upstream rectifying section 214, the space above the substrate S, and the downstream rectifying section 215, respectively. At this time, the first gas and the second gas are supplied to the substrates S without causing pressure loss on each substrate S, thereby enabling uniform processing across the substrates S.

[0167] (Gas supply to the insulation area)

[0168] However, in the first step, the first process gas is supplied to the substrate S located in the processing area A. Furthermore, in the third step, the second process gas is supplied to the substrate S located in the processing area A. At this time, if the inert gas supply system 270 is used to supply an inert gas to the insulating area B below the processing area A, it is possible to prevent the first process gas, the second process gas, and reaction byproducts from flowing into the insulating area B and depositing a film on the insulating portion 502.

[0169] However, as described above, flash flow supply of the process gas is performed in the first and third steps. In this case, a pressure difference is generated between the process area A and the insulating area B in the initial stage of the flash flow supply. When the pressure in the process area A is higher than the pressure in the insulating area B, a downward flow of the process gas from the process area A to the insulating area B occurs, which may hinder uniform processing of the substrate S.

[0170] Therefore, the inert gas supply system 270 supplies the inert gas to the insulating area B in a manner that reduces the pressure difference between the processing area A and the insulating area B when the process gas (at least one of the first process gas or the second process gas, and preferably both) is supplied in a flash flow. More specifically, in order to supply the inert gas in a manner that reduces the pressure difference between the processing area A and the insulating area B when the process gas is supplied in a flash flow, the first process gas supply system 250 and the second process gas supply system 260 serving as the first gas supply unit, and the inert gas supply system 270 serving as the second gas supply unit are controlled in accordance with control instructions from the controller 600.

[0171] Here, "the pressure difference becomes smaller" means that the pressure difference between the processing area A and the insulating area B does not exceed the pre-defined allowable value. In other words, it means that the pressure difference between the processing area A and the insulating area B is below the prescribed allowable value, and the pressures of the processing area A and the insulating area B are considered to be the same, and more preferably the pressures of each are the same. In addition, the prescribed allowable value is set, for example, so that the pressure difference between the processing area A and the insulating area B converges within a range of about -10% to 10%. In this way, the flow of the processing gas supplied to the processing area A toward the insulating area B can be suppressed, and uniform processing of each substrate S can be achieved. If the pressure difference exceeds -10%, the inert gas flowing into the insulating area B flows into the processing area A, which may dilute the processing gas and worsen the uniformity between the surfaces. In addition, if the pressure difference exceeds 10%, the processing gas flows into the insulating area B, which may cause by-products to adhere to the furnace mouth parts such as the insulating part and the manifold. In addition, the prescribed allowable value is not limited to this, and can be appropriately set according to the relationship between the processing area A and the insulating area B.

[0172] Hereinafter, a method of controlling the gas supply for reducing the pressure difference between the processing area A and the insulation area B will be described with reference to specific examples.

[0173] (First specific example)

[0174] When the inert gas supply system 270 supplies the inert gas to the insulation area B, Figure 2 In step (C), valve 274 is first opened and valve 277 is closed, thereby charging the third flash tank 279 with inert gas (purge gas). For example, if the tank capacity is 1000cc, the third flash tank 279 is charged until the gas volume reaches a range of 30 kPa to 50 kPa. Alternatively, the charging may be performed before the inert gas supply begins.

[0175] Then, after the third flash tank 279 is filled with gas, the valve 277 is opened. As a result, the inert gas stored in the third flash tank 279 is supplied to the insulating area B in the processing chamber 210 at a high flow rate over a short period of time. In this manner, the inert gas supply system 270 can also supply the inert gas in a flash flow manner, similar to the process gas supply described above.

[0176] Regarding the flash flow supply of the inert gas by the inert gas supply system 270, Figure 6 As shown, the flash flow supply of the first process gas (raw material gas) to the process area A in the first step is performed synchronously, and the flash flow supply of the second process gas (reactant gas or reforming gas) to the process area A in the third step is performed synchronously. That is, when the first process gas is flashed in the first step, the flash flow supply of the inert gas to the insulation area B is performed synchronously therewith, and when the second process gas is flashed in the third step, the flash flow supply of the inert gas to the insulation area B is performed synchronously therewith.

[0177] Here, “synchronization” means that each flash supply is performed at the same timing, and specifically includes not only the case where the start and end of the flash supply are performed at the same time, but also the case where there is a timing deviation that can be regarded as simultaneous even if not completely simultaneous.

[0178] Therefore, the supply of inert gas to the insulation area B is performed simultaneously (but including cases where there is a certain degree of deviation that can be regarded as simultaneous) with the flash flow supply of process gas to the process area A. Furthermore, the inert gas is also flash flow supplied to the insulation area B at this time.

[0179] The inert gas is supplied to the insulating region B at a predetermined flow rate or flow velocity. The predetermined flow rate or flow velocity is set in advance to reduce the pressure difference between the processing region A and the insulating region B.

[0180] For example, the flow rate of the process gas serving as the first gas is, for example, 0.1 to 300 slm, preferably 0.3 to 200 slm, and more preferably 0.5 to 100 slm. Furthermore, the process gas includes a first process gas supplied in the first step and a second process gas supplied in the third step, but the flow rate of the first process gas and the flow rate of the second process gas may be the same or different.

[0181] With respect to the flow rate of such a processing gas, the flow rate of the inert gas as the second gas is set according to the volume ratio of the processing area A to the insulation area B. For example, the volume of the processing area A is 1 to 500 L, preferably 5 to 300 L, and more preferably 10 to 200 L. In addition, the volume of the insulation area B is 0.5 to 300 L, preferably 1 to 200 L, and more preferably 5 to 100 L. Moreover, when the volume ratio of the processing area A to the insulation area B is between 1:1 and 10:1, the flow rate of the inert gas is 0.1 to 200 slm, preferably 0.2 to 150 slm, and more preferably 0.3 to 60 slm. In addition, when the flow rate of the first processing gas supplied in the first process is different from the flow rate of the second processing gas supplied in the third process (refer to Figure 6 ), the flow rate of the inert gas supplied in the first step and the flow rate of the inert gas supplied in the third step are also different from each other according to the flow rates of the first processing gas and the second processing gas.

[0182] By controlling the gas supply to the processing area A and the insulating area B in this manner, even when flashing the processing gas to the processing area A, the inert gas is also flashing synchronously to the insulating area B. This reduces the pressure difference between the processing area A and the insulating area B. Consequently, it is possible to suppress the processing gas supplied to the processing area A from flowing downward toward the insulating area B, resulting in reliable and uniform processing of the substrates S. Furthermore, by suppressing the processing gas from flowing downward toward the insulating area B (i.e., preventing the processing gas from flowing back toward the insulating area B), it is also possible to prevent byproducts from adhering to the insulating area B.

[0183] The inert gas supply to the heat-insulating area B, which is used to prevent the backflow of the processing gas and the adhesion of by-products, can be supplied through the gas supply hole 291 and the gas supply pipe 292 provided at a position opposite the gas exhaust structure 213. This allows for a smooth flow of the inert gas. This is ideal for reliably preventing the backflow of the processing gas and the adhesion of by-products.

[0184] (Second specific example)

[0185] The supply of the inert gas to the insulation region B may be not the flash flow supply described in the first specific example, but a control method as in the second specific example described below.

[0186] When the inert gas supply system 270 supplies the inert gas to the insulation area B, Figure 2 In step (C), the valve 274 and the valve 277 are opened. Thus, the inert gas is supplied to the insulating region B in the processing chamber 210 by the inert gas supply system 270 .

[0187] However, regarding the timing of supplying the inert gas by the inert gas supply system 270, as shown in FIG. Figure 7 As shown, the supply of the inert gas to the insulating region B is started before the flash flow supply of the first process gas (raw material gas) to the process region A in the first step, and the supply of the inert gas to the insulating region B is started before the flash flow supply of the second process gas (reactive gas or reforming gas) to the process region A in the third step. That is, the inert gas is supplied to the insulating region B before the flash flow supply of the first process gas in the first step, and the inert gas is supplied to the insulating region B before the flash flow supply of the second process gas in the third step.

[0188] The inert gas supply system 270 starts supplying the inert gas at a predetermined time before the start of the flash flow supply of the first or second process gas. Here, the "predetermined time" is set to be sufficient time from the start of supply of the inert gas to the insulation area B until the inert gas can be supplied into the insulation area B at a predetermined flow rate or flow velocity.

[0189] The flow rate or flow velocity of the inert gas may be the same as that in the first specific example.

[0190] If the gas supply to the processing area A and the insulating area B is controlled in this manner, even when the processing gas is supplied to the processing area A by flash flow, the pressure difference between the processing area A and the insulating area B can be reduced because the inert gas has already been supplied to the insulating area B at the start of the flash flow supply. Therefore, as in the case of the first specific example, the effect of preventing the backflow of the processing gas and the effect of preventing the adhesion of by-products can be achieved.

[0191] (Other specific examples)

[0192] Regarding the flash flow supply of the first process gas (raw material gas) to the process area A in the first step and the flash flow supply of the second process gas (reactive gas or reforming gas) to the process area A in the third step, as shown in FIG. Figure 8 and Figure 9As shown, the first step and the third step may be performed intermittently multiple times.

[0193] In this case, regarding the supply of the inert gas to the insulation area B by the inert gas supply system 270, for example Figure 8 As shown, the flash flow supply of the first and second process gases can be synchronized with each other and performed intermittently multiple times in the first and third steps. By controlling the gas supply to the processing area A and the insulating area B in this manner, the pressure difference between the processing area A and the insulating area B can be reduced, as in the first specific example, thereby preventing backflow of the process gases and the adhesion of byproducts.

[0194] In addition, regarding the supply of the inert gas to the insulation area B by the inert gas supply system 270, for example Figure 9 As shown, the inert gas can be supplied to the insulating region B before the initial flash flow supply of the process gas in each of the first and third steps. By controlling the gas supply to the process region A and the insulating region B in this manner, the pressure difference between the process region A and the insulating region B can be reduced, as in the second specific example, thereby preventing the backflow of the process gas and the adhesion of by-products.

[0195] (4) Effects of this embodiment

[0196] According to this embodiment, one or more of the following effects are achieved.

[0197] (a) In this embodiment, the first gas supply unit for supplying the process gas and the second gas supply unit for supplying the inert gas are controlled so that, when the process gas is supplied as the first gas by flash flow, the inert gas (purge gas) as the second gas is supplied in such a manner that the pressure difference between the process area A (the first area) and the insulating area B (the second area) is reduced. Therefore, even when the process gas is supplied by flash flow, the pressure difference between the process area A and the insulating area B can be reduced. This prevents the process gas supplied to the process area A from flowing back into the insulating area B and prevents byproducts from adhering to the insulating area B, which is ideal for achieving uniform processing of each substrate S.

[0198] (b) In this embodiment, the inert gas is supplied to the heat-insulating area B via the gas supply hole 291 and the gas supply pipe 292, which are provided at a position opposite to the gas exhaust structure 213. This allows for a smooth flow of the inert gas. This is highly desirable in terms of reliably preventing the backflow of the processing gas and the adhesion of byproducts.

[0199] (5) Modifications, etc.

[0200] As mentioned above, although one embodiment of the present disclosure has been specifically described, the present disclosure is not limited to the above-mentioned embodiment, and various modifications can be made without departing from the spirit thereof.

[0201] For example, in the above embodiment, the case where a film is formed on a substrate S using a first process gas and a second process gas in a film forming process performed by a substrate processing device is cited as an example, but the present method is not limited to this. That is, other types of gases can also be used as process gases for film forming processes to form other types of thin films. Moreover, even when more than three process gases are used, the present method can be applied as long as they are alternately supplied for film forming processes. Specifically, as the first element, for example, various elements such as titanium (Ti), silicon (Si), zirconium (Zr), and hafnium (Hf) can be used. In addition, as the second element, for example, nitrogen (N), oxygen (O), etc. can be used. In addition, as the first element, as described above, Si is more preferred.

[0202] Here, HCDS gas is used as an example as the first processing gas. However, as long as it contains silicon and has a Si-Si bond, it is not limited to this. For example, tetrachlorodimethyldisilane ((CH3)2Si2Cl4, abbreviated as TCDMDS) or dichlorotetramethyldisilane ((CH3)4Si2Cl2, abbreviated as DCTMDS) can also be used. TCDMDS has a Si-Si bond and further contains a chloro group and an alkylene group. DCTMDS also has a Si-Si bond and further contains a chloro group and an alkylene group.

[0203] Furthermore, for example, in the above-described embodiment, a film forming process is cited as an example of a process performed by a substrate processing apparatus, but the present embodiment is not limited thereto. That is, in addition to the film forming process exemplified in the embodiment, the present embodiment can also be applied to film forming processes other than the thin film processes exemplified in the embodiment. Furthermore, a portion of the structure of a certain embodiment can be replaced with a structure of another embodiment, and a structure of another embodiment can be added to a structure of a certain embodiment. Furthermore, a portion of the structure of an embodiment can be supplemented with, deleted from, or replaced with another structure.

[0204] Furthermore, for example, the above-described method describes an example of film formation using a batch-type substrate processing apparatus that processes multiple substrates at a time. The present disclosure is not limited to the above-described method and, for example, can also be appropriately applied to film formation using a single-wafer-type substrate processing apparatus that processes one or several substrates at a time. Furthermore, the above-described method describes an example of film formation using a substrate processing apparatus with a hot-wall processing furnace. The present disclosure is not limited to the above-described method and can also be appropriately applied to film formation using a substrate processing apparatus with a cold-wall processing furnace.

[0205] When these substrate processing apparatuses are used, each process can be performed using the same process procedures and process conditions as those in the above-described embodiment or modified examples, and the same effects as those in the above-described embodiment or modified examples can be obtained.

[0206] In above this modification, also can obtain the same effect as above-mentioned mode.In addition, above-mentioned mode or modification can suitably be used in combination.The processing procedure at this moment, treatment condition for example can be made as the same as the processing procedure, treatment condition of above-mentioned mode or modification.

[0207] Explanation of symbols

[0208] S…substrate, 10…substrate processing apparatus, 201…processing chamber, 210…reaction tube, 212…processing gas supply structure, 213…gas exhaust structure, 250…first processing gas supply system, 260…second processing gas supply system, 270…inert gas supply system, 502…heat insulation part.

Claims

1. A substrate processing device, characterized in that: have: a processing chamber for processing a substrate; a first gas supply unit for supplying a first gas to a first area within the processing chamber; a second gas supply unit that supplies a second gas to a second region different from the first region in the processing chamber; and The control unit is configured to control the first gas supply unit and the second gas supply unit so that the second gas is supplied so that the pressure difference between the first region and the second region becomes small when the first gas is supplied in a flash flow.

2. The substrate processing apparatus according to claim 1, wherein: The first region is a substrate processing region where the substrate is processed.

3. The substrate processing apparatus according to claim 2, wherein: The substrate processing region is a substrate holding region corresponding to a region where a plurality of substrates are held by a substrate holder.

4. The substrate processing apparatus according to claim 1 or 2, wherein: The second region is a heat insulating region corresponding to a heat insulating portion provided at a lower portion of the substrate holder.

5. The substrate processing apparatus according to claim 1, wherein: The first gas supply unit includes a flash tank and supplies the first gas by flash flow.

6. The substrate processing apparatus according to claim 5, wherein: The second gas supply unit includes a flash tank configured to supply the second gas when flashing the first gas.

7. The substrate processing apparatus according to claim 1, wherein: The second gas is supplied simultaneously with the supply of the first gas.

8. The substrate processing apparatus according to claim 1, wherein: The second gas is supplied before the flash flow supply of the first gas.

9. The substrate processing apparatus according to claim 1, wherein: The first gas and the second gas are different gases.

10. The substrate processing apparatus according to claim 9, wherein: The first gas is a processing gas, and the second gas is a purge gas.

11. The substrate processing apparatus according to claim 1, wherein: The second gas supply part is provided at a lower portion of the processing chamber.

12. The substrate processing apparatus according to claim 11, wherein: The second gas supply unit is provided on a side surface of the processing chamber below an upper end of the second region.

13. The substrate processing apparatus according to claim 1, wherein The substrate processing apparatus includes an exhaust unit that exhausts the first gas.

14. The substrate processing apparatus according to claim 13, wherein: The second gas supply unit is provided at a position facing the exhaust unit.

15. A method for manufacturing a semiconductor device, characterized in that: Has the following processes: In a first step, a first gas is supplied to a first area within the processing chamber; and In the second step, a second gas is supplied to a second area in the processing chamber that is different from the first area. In the second step, when the first gas is supplied by flash flow, the second gas is supplied so that the pressure difference between the first region and the second region becomes small.

16. The method for manufacturing a semiconductor device according to claim 15, wherein: In the second step, the second gas is supplied simultaneously with the flash flow supply of the first gas.

17. The method for manufacturing a semiconductor device according to claim 15 or 16, wherein: In the second step, the second gas is supplied by flash flow.

18. The method for manufacturing a semiconductor device according to claim 15, wherein: In the second step, the second gas is supplied before the first gas is supplied by flash flow.

19. The method for manufacturing a semiconductor device according to claim 15, wherein: In the second step, the second gas is supplied at a predetermined flow rate or flow velocity.

20. A program, characterized in that The computer enables the substrate processing device to perform the following process: supplying a first gas to a first region within the processing chamber; and supplying a second gas to a second region different from the first region within the processing chamber, In the process of supplying the second gas, when the first gas is supplied by flash flow, the second gas is supplied so that the pressure difference between the first region and the second region becomes smaller.

Images