Lithographic machine burst fault handling method and lithographic machine system

Abstract

The present application provides a method for handling sudden faults of a lithography machine and a lithography machine system, the method comprising: an analysis and decision engine receiving first monitoring data collected in real time by each monitoring module, determining whether the lithography machine system is abnormal based on the first monitoring data, and if so, sending a pause instruction and a data storage instruction to the transmission subsystem and the exposure subsystem; the storage module storing the working data in a non-volatile storage unit and an offline storage unit in the storage module, and sending a storage completion message to the analysis and decision engine after the storage is completed; the analysis and decision engine responds to the storage completion message and sends a power-off instruction to the power module to stop supplying power. The monitoring module collects data in real time, thereby being able to obtain the abnormal state of the lithography machine in a timely manner, so that the analysis and decision engine can promptly trigger the data subsystem pause, data storage, and shutdown protection actions, thereby significantly shortening the abnormal response time, reducing the risk of abnormal expansion, and ensuring equipment safety.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of photoetching machines, in particular to a photoetching machine sudden failure processing method and a photoetching machine system. BACKGROUND

[0002] In semiconductor photoetching manufacturing, stable operation of a photoetching machine and its ability to continuously work under abnormal working conditions are crucial to wafer yield and production efficiency.

[0003] In the prior art, a photoetching machine does not timely monitor abnormal working conditions, and when a sudden abnormality occurs, it usually only performs simple shutdown protection. This can cause the following problems: first, there is a lag in response to abnormal working conditions. Second, when a photoetching machine encounters a sudden abnormality, it cannot timely trigger data storage and shutdown protection, resulting in loss of critical data and even damage to the equipment. SUMMARY

[0004] The present application aims to solve the problems in the prior art that abnormal working conditions cannot be responded to in a timely manner, and data storage and shutdown protection cannot be triggered in a timely manner, by providing a photoetching machine sudden failure processing method and a photoetching machine system.

[0005] To achieve the above-mentioned purpose, the technical solution adopted by the present application is as follows:

[0006] In a first aspect, the present application provides a photoetching machine sudden failure processing method, which is applied to a photoetching machine system, the photoetching machine system comprising a plurality of monitoring modules, an analysis and decision engine, a storage module, a transmission subsystem, an exposure subsystem and a power module, the method comprising:

[0007] The analysis and decision engine receives first monitoring data collected in real time by each monitoring module, determines whether the photoetching machine system has an abnormality according to the first monitoring data, and if so, sends a pause instruction and a data storage instruction to the transmission subsystem and the exposure subsystem, the pause instruction being used to instruct each subsystem in the transmission subsystem and the exposure subsystem to pause work, and the data storage instruction being used to instruct the transmission subsystem and the exposure subsystem to send working data to the storage module;

[0008] The storage module stores the working data to a non-volatile storage unit and an offline storage unit in the storage module, and sends storage completion information to the analysis and decision engine after storage is completed;

[0009] The analysis and decision engine responds to the storage completion information, sends a power-off instruction to the power module, so that the power module stops power supply.

[0010] Optionally, the method further comprises:

[0011] The analysis decision engine receives second monitoring data collected by each monitoring module in real time, determines whether the lithography machine system returns to normal according to the second monitoring data, sends a power supply instruction to the power supply module if yes, controls each monitoring module to calibrate and controls the transmission subsystem to perform self-checking, and obtains the working data from the storage module, controls the transmission subsystem and the exposure subsystem to perform breakpoint continuous exposure processing based on the working data, so that the lithography machine system continues the pre-abnormal action.

[0012] Optionally, the control of each monitoring module to calibrate and the control of the transmission subsystem to perform self-checking include:

[0013] controlling each monitoring module to complete reading calibration;

[0014] controlling the positions of the mask table and the silicon wafer table in the transmission subsystem to return to the pre-abnormal state and perform origin position self-checking according to the working data.

[0015] Optionally, the control of the transmission subsystem and the exposure subsystem to perform breakpoint continuous exposure processing based on the working data includes:

[0016] determining whether the transmission subsystem and the exposure subsystem meet the continuous exposure condition;

[0017] if yes, obtaining current data of the exposure subsystem and the transmission subsystem;

[0018] controlling the transmission subsystem and the exposure subsystem to perform breakpoint continuous exposure processing based on the working data and the current data.

[0019] Optionally, the determination of whether the transmission subsystem and the exposure subsystem meet the continuous exposure condition includes:

[0020] determining a fault level;

[0021] determining the corresponding continuous exposure constraint of the fault level in a repair case library, and determining whether the self-checking and calibration results of the monitoring module and the transmission subsystem meet the continuous exposure constraint;

[0022] if yes, determining that the transmission subsystem and the exposure subsystem meet the continuous exposure condition.

[0023] Optionally, the control of the transmission subsystem and the exposure subsystem to perform breakpoint continuous exposure processing based on the working data and the current data includes:

[0024] According to the working data and the current data, consistency verification is performed to determine a region to be processed and a step to be processed;

[0025] Based on the working data, the current data, the region to be processed and the step to be processed, target parameters and target instructions are determined, the target parameters including an exposure dose;

[0026] According to the target parameters and the target instructions, the transport subsystem and the exposure subsystem are controlled to perform a breakpoint continuous exposure process.

[0027] Optionally, before the target parameters and the target instructions are determined based on the working data, the current data, the region to be processed and the step to be processed, the method further comprises:

[0028] The consistency verification result of the transport subsystem, the consistency verification result of the exposure subsystem, a continue exposure button and a terminate exposure button are displayed on a breakpoint continuous exposure interactive interface;

[0029] In response to a user operation on the continue exposure button or the terminate exposure button on the breakpoint continuous exposure interactive interface, a breakpoint continuous exposure process or a terminate exposure process is executed.

[0030] Optionally, the target parameters and the target instructions are determined based on the working data, the current data, the region to be processed and the step to be processed, comprising:

[0031] A fault analysis report generated by the analysis and decision engine is obtained, the fault analysis report being obtained by the analysis and decision engine based on a fault tree analysis algorithm on the working data;

[0032] According to the fault analysis report and a pre-established fault case library, an adjustment scheme corresponding to a current fault is determined;

[0033] According to the adjustment scheme corresponding to the current fault, the working data, the current data, the region to be processed and the step to be processed, the target parameters and the target instructions are determined.

[0034] Optionally, before the transport subsystem and the exposure subsystem are controlled to perform the breakpoint continuous exposure process according to the target parameters and the target instructions, the method further comprises:

[0035] The transport subsystem and the exposure subsystem are controlled to perform a simulation exposure on a dummy wafer according to the target parameters and the target instructions;

[0036] Simulation exposure results and simulation working data are collected, and the target parameters and the target instructions are adjusted and optimized according to the simulation exposure results and the simulation working data.

[0037] In a second aspect, the application provides a lithography machine system, which comprises a plurality of monitoring modules, an analysis decision engine, a storage module, a transmission subsystem, an exposure subsystem and a power module, and is used for executing the lithography machine sudden failure processing method in the first aspect.

[0038] The application has the following beneficial effects: the analysis decision engine receives the first monitoring data collected by the monitoring modules in real time, determines whether the lithography machine system has an abnormality according to the first monitoring data, and if so, sends a pause instruction and a data storage instruction to the transmission subsystem and the exposure subsystem. The storage module stores the working data to the non-volatile storage unit and the offline storage unit in the storage module, and sends a storage completion information to the analysis decision engine after the storage is completed. The analysis decision engine responds to the storage completion information, sends a power-off instruction to the power module, so that the power module stops power supply. In this embodiment, the monitoring modules collect the first monitoring data in real time, so as to timely obtain the abnormal state of the lithography machine from multiple dimensions, so that the analysis decision engine can timely trigger the actions of data subsystem pause, data storage and shutdown protection. Compared with the traditional lithography machine system, the method of this embodiment is suitable for a wide range of industrial environments, can greatly shorten the abnormal response time, reduce the risk of abnormal expansion, and ensure the safety of the equipment. Moreover, the storage module includes the non-volatile storage unit and the offline storage unit, forming a dual backup architecture, ensuring the traceability of key data when an abnormality occurs, and providing reliable data support for the exposure continuation. BRIEF DESCRIPTION OF DRAWINGS

[0039] In order to more clearly illustrate the technical solutions of the embodiments of the application, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the application, and therefore should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.

[0040] Figure 1 is a schematic diagram of a lithography machine system architecture provided by an embodiment of the application;

[0041] Figure 2 is a flowchart of a lithography machine sudden failure processing method provided by an embodiment of the application;

[0042] Figure 3 is a flowchart of a breakpoint exposure continuation processing provided by an embodiment of the application;

[0043] Figure 4 is a flowchart of a judgment of exposure continuation conditions provided by an embodiment of the application;

[0044] Figure 5is a flowchart of another breakpoint continuation processing provided by an embodiment of the present application;

[0045] Figure 6 is a schematic diagram of a breakpoint continuation interaction interface provided by an embodiment of the present application;

[0046] Figure 7 is a flowchart of determining a target parameter and a target instruction provided by an embodiment of the present application. DETAILED DESCRIPTION

[0047] In order to make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. It should be understood that the drawings in the present application serve only the purpose of description and illustration, and are not used to limit the scope of protection of the present application. In addition, it should be understood that the schematic drawings are not drawn to scale. The flowcharts show the operations implemented according to some embodiments of the present application. It should be understood that the operations of the flowcharts can not be implemented in sequence, and the steps without logical context relationship can be reversed in sequence or implemented simultaneously. In addition, one or more other operations can be added to the flowcharts or one or more operations can be removed from the flowcharts under the guidance of the content of the present application.

[0048] In addition, the described embodiments are only some of the embodiments of the present application, not all the embodiments. The components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0049] It should be noted that the term “comprises” will be used in the embodiments of the present application to indicate the presence of the features declared thereafter, but does not exclude the addition of other features.

[0050] In the prior art, when the photolithography machine encounters sudden working conditions such as failure, disaster, and power failure, it cannot timely monitor abnormal working conditions, and only performs simple shutdown protection, resulting in a lag in response to abnormal working conditions. Secondly, when the photolithography machine encounters sudden abnormalities, it cannot timely trigger data storage and shutdown protection, resulting in loss of critical data and even damage to the equipment. In addition, when the abnormal state is restored, it cannot automatically restore the data before the failure and continue to expose, and needs manual intervention, which consumes time and manpower, and the continuation exposure accuracy is low.

[0051] Based on this, the application provides a photolithography machine burst fault processing method. In the method, the analysis and decision engine receives the monitoring data collected by the monitoring module in real time, and when the photolithography machine system is determined to be abnormal according to the monitoring data, the transmission subsystem and the exposure subsystem are controlled to suspend work, and the working data is sent to the storage module. When the storage module receives the working data and completes storage, the analysis and decision engine sends a power-off instruction to the power module to stop power supply of the power module. When the analysis and decision engine determines that the photolithography machine system returns to normal, the power module is controlled to resume power supply, and the working data is used for breakpoint exposure processing to make the photolithography machine system continue the action before the data anomaly. In the application, the monitoring module collects data in real time, so that the analysis and decision engine can timely monitor abnormal working conditions, and after the abnormal working conditions occur, the working data is transmitted to the storage module for storage in a timely manner, so that the key data of photolithography is accurately and completely recorded, and key data loss is avoided. After the data storage is completed, the power is turned off in a timely manner to avoid equipment damage. After the photolithography machine returns to normal, the working data stored in the storage module is used for breakpoint exposure processing, which meets the strict requirements of semiconductor manufacturing for efficient and continuous production.

[0052] Figure 1 is a schematic diagram of a photolithography machine system provided by an embodiment of the application. As shown in Figure 1 , the photolithography machine system includes a plurality of monitoring modules, an analysis and decision engine, a storage module, a transmission subsystem, an exposure subsystem, and a power module.

[0053] Among them, each monitoring module is connected with the analysis and decision engine, and the analysis and decision engine is connected with the storage module, the transmission subsystem, the exposure subsystem, and the power module respectively. The power module is also connected with the transmission subsystem and the exposure subsystem.

[0054] Among them, the monitoring module can be a multi-dimensional sensor. The plurality of monitoring modules cover the transmission subsystem and the exposure subsystem in the photolithography machine system. Exemplarily, the monitoring module can be a grating ruler, a pressure sensor, a temperature sensor, a position sensor, an eddy current sensor, and a flow sensor, etc.

[0055] Optionally, the analysis and decision engine has built-in analysis and detection algorithms for analyzing data and controlling the storage module, the transmission subsystem, the exposure subsystem, and the power module according to the analysis results.

[0056] Optionally, the storage module includes a non-volatile storage unit and an offline storage unit.

[0057] Optionally, the transmission subsystem includes a wafer transmission subsystem, a wafer table subsystem, a wafer alignment subsystem, a mask transmission subsystem, a mask table subsystem, and a mask alignment subsystem. The wafer transmission subsystem can be used to accurately transfer the wafer from the loading area to the exposure area by a mechanical arm or a conveyor belt. The wafer table subsystem can support the wafer and realize 6 degrees of freedom motion. The wafer alignment subsystem can realize pre-alignment and dynamic alignment. The mask transmission subsystem is used for mask loading and protection, and supports automatic switching of multiple mask libraries. The mask table subsystem supports high-precision support and supports real-time communication with the wafer table. The mask alignment subsystem can perform mask pattern matching and penetrate the mask substrate based on tunable laser technology to avoid reflection interference.

[0058] Optionally, the exposure subsystem includes an illumination subsystem, an objective lens subsystem, a leveling and focusing subsystem, an environment subsystem, an electrical subsystem, and a control subsystem. The illumination subsystem provides an illumination beam with specific wavelength, uniformity and intensity, irradiates the mask to form a pattern light source to be transferred. The objective lens subsystem accurately projects the pattern on the mask onto the photoresist of the wafer with a specified scale and resolution through high-precision optical imaging. The leveling and focusing subsystem detects the attitude of the wafer surface in real time and adjusts its height and inclination to ensure that the wafer exposure surface and the objective lens imaging surface strictly coincide. The environment subsystem controls the temperature, humidity, air pressure and cleanliness of the exposure area, isolates vibration and airflow interference, and ensures the stability of the high-precision imaging environment. The electrical subsystem provides stable power supply for each component of the exposure subsystem, drives the motor, sensor and other execution elements to run and transmits electrical signals. The control subsystem receives instructions and coordinates the linkage of each subsystem, adjusts the parameters through real-time feedback to ensure that the exposure process is executed in order according to the accuracy requirements.

[0059] Optionally, the power module can include a battery, a switch, etc. When the power module stops supplying power, the devices involved in the transmission subsystem and the exposure subsystem are powered off.

[0060] Next, referring to Figure 2 The specific steps of the lithography machine sudden failure processing method in the present application are introduced. Among them, Figure 2 is a flowchart of a lithography machine sudden failure processing method provided by an embodiment of the present application.

[0061] S201, the analysis decision engine receives the first monitoring data collected by each monitoring module in real time, determines whether there is an abnormality in the lithography machine system according to the first monitoring data, if yes, sends a pause instruction and a data storage instruction to the transmission subsystem and the exposure subsystem, the pause instruction is used to instruct each subsystem in the transmission subsystem and the exposure subsystem to pause work, and the data storage instruction is used to instruct the transmission subsystem and the exposure subsystem to send working data to the storage module.

[0062] Optionally, the monitoring module covers the transmission subsystem and the exposure subsystem, and collects first monitoring data of the transmission subsystem and the exposure subsystem in real time. The first monitoring data can include position and motion data, exposure process data, system motion data, and fault diagnosis data.

[0063] The position and motion data at least include wafer stage coordinates, mask stage coordinates, wafer stage motion trajectories, mask stage motion trajectories, and alignment mark data. Specifically, the wafer stage coordinates and the mask stage coordinates can be recorded by absolute position sensors to ensure the accuracy of the position reference of the subsequent exposure. The wafer stage motion trajectories and the mask stage motion trajectories can include scanning speed and acceleration, etc., for reproducing the motion trajectories of the wafer stage and the mask stage when the abnormality occurs. The alignment mark data is the alignment mark position of the wafer and the mask, which is used for self-checking and calibration after the lithography machine system returns to normal state.

[0064] The exposure process data includes dose parameters, light source parameters, ambient temperature, and ambient humidity. Specifically, the dose parameters can include exposure energy, pulse width, etc., for ensuring the continuity of the linewidth and precision of the lithography pattern. The light source parameters can include light source intensity, lens focal length, and filter configuration, for maintaining the consistency of the light path before and after the abnormality. The ambient temperature and the ambient humidity are used to compensate for the influence of environmental changes on the lithography.

[0065] The system motion data includes operation sequences, working states and communication instructions of the transmission subsystem, and working states and communication instructions of the exposure subsystem. Specifically, the operation sequences include the current lithography stage, such as pre-alignment and scanning exposure, to ensure the completion of the subsequent exposure after the state is restored. The working states of the transmission subsystem and the exposure subsystem include shutter data, vacuum pump parameters, and cooling system working parameters, to ensure the consistency of the device parameters before and after the abnormality, and to avoid device conflicts. The communication instructions of the transmission subsystem and the exposure subsystem include interaction data with the wafer transfer robot, to ensure the coordination of the production line before and after the abnormality.

[0066] The fault diagnosis data includes abnormal logs of each monitoring module and environmental interference data. Specifically, the abnormal logs include sensor alarm information and device error codes, which are used to assist in fault positioning after the device is restored. The interference data can include earthquake vibration amplitude, earthquake vibration, and voltage fluctuation data, etc., for evaluating the risk of device damage.

[0067] Optionally, the monitoring module can send the first monitoring data to the analysis decision engine at a preset time interval, so that the analysis decision engine determines whether the current lithography system has an abnormality in time based on the first monitoring data according to an abnormality detection algorithm. The abnormality of the lithography system can include power supply abnormality, damper abnormality, temperature and pressure abnormality, flow abnormality, liquid leakage and wire breakage abnormality. The power supply abnormality is that the power supply of the lithography system is switched from mains to battery due to power failure or the like. The damper abnormality includes that the damper height exceeds a preset height threshold.

[0068] As an optional embodiment, each monitoring module is built-in with an abnormality judgment algorithm and has an abnormality recognition capability. When an abnormality occurs, the monitoring module can send the abnormality data and the abnormality cause as the first monitoring data to the analysis decision engine.

[0069] Optionally, after collecting the first monitoring data, each monitoring module sends the first monitoring data to the corresponding transmission subsystem or exposure subsystem in addition to sending the first monitoring data to the analysis decision engine. When the transmission subsystem or the exposure subsystem receives the storage instruction, the first monitoring data received at the current time is taken as working data, and the working data is sent to the storage module.

[0070] S202, the storage module stores the working data in the non-volatile storage unit and the offline storage unit in the storage module, and sends storage completion information to the analysis decision engine after storage is completed.

[0071] Optionally, the working data can be stored in a structured format to ensure data traceability.

[0072] As an optional embodiment, the storage module can store the working data in the non-volatile storage unit and the offline storage unit respectively, and the data stored in the two storage units is the same.

[0073] As another optional embodiment, when an offline situation occurs, the working data is stored in the offline storage unit, and when the offline situation is recovered, the data cached in the offline storage unit is synchronized to the non-volatile storage unit to save cache resources.

[0074] S203, the analysis decision engine sends a power-off instruction to the power supply module in response to the storage completion information, so that the power supply module stops power supply.

[0075] As an optional embodiment, the storage module sends the storage completion information to the analysis decision engine through a communication protocol. The information includes a storage state, and the storage state is a "completed" state. The analysis decision engine confirms that the data has been stored after analyzing the storage completion information.

[0076] Optionally, the power-off instruction is generated by the analysis decision engine and sent to the instruction message of the power module, which is used to instruct the power module to stop power supply to the transmission subsystem and the exposure subsystem. The power-off instruction can include target power-off object and execution time, etc.

[0077] As an optional embodiment, the power module can be built-in with a microcontroller. After receiving the power-off instruction, the microcontroller cuts off the power output of the corresponding subsystem through internal program, for example, closes the enable terminal of the DC-DC converter.

[0078] In this embodiment, the analysis decision engine receives the first monitoring data collected by the monitoring modules in real time, determines whether the lithography machine system is abnormal according to the first monitoring data, and if so, sends the pause instruction and the data storage instruction to the transmission subsystem and the exposure subsystem. The storage module stores the working data to the non-volatile storage unit and the offline storage unit in the storage module, and sends the storage completion information to the analysis decision engine after the storage is completed. The analysis decision engine responds to the storage completion information and sends the power-off instruction to the power module to stop power supply. In this embodiment, the monitoring modules collect the first monitoring data in real time, so as to timely obtain the abnormal state of the lithography machine from multiple dimensions, so that the analysis decision engine can timely trigger the actions of data subsystem pause, data storage and shutdown protection. Compared with the traditional lithography machine system, the method of this embodiment is suitable for a wide range of industrial environments, can greatly shorten the abnormal response time, reduce the risk of abnormal expansion, and ensure the safety of the equipment. Moreover, the storage module includes the non-volatile storage unit and the offline storage unit, which constitutes a dual backup architecture to ensure the traceability of key data in the event of an abnormality and provide reliable data support for the subsequent exposure.

[0079] Next, the breakpoint resuming exposure process when the lithography machine system returns to normal is introduced.

[0080] Optionally, the analysis decision engine receives the second monitoring data collected by the monitoring modules in real time, determines whether the lithography machine system returns to normal according to the second monitoring data, and if so, sends the power supply instruction to the power module, controls the monitoring modules to calibrate and controls the transmission subsystem to self-check, and obtains the working data from the storage module, and controls the transmission subsystem and the exposure subsystem to perform the breakpoint resuming exposure processing based on the working data, so as to continue the action before the abnormality of the lithography machine system.

[0081] Optionally, when the lithography machine system is abnormal, the transmission subsystem and the exposure subsystem are powered off. At this time, the monitoring modules still collect data in real time to determine whether the lithography machine system returns to normal from the abnormal state. When the lithography machine system performs the breakpoint resuming exposure processing, the monitoring modules still work to monitor the abnormality in real time, so as to dynamically adjust the parameters and the instructions.

[0082] Optionally, the second monitoring data and the first monitoring data contain the same type of data, including position and motion data, exposure process data, system motion data, and fault diagnosis data.

[0083] As an optional implementation, the analysis and decision engine can determine whether the lithography system returns to normal according to the second monitoring data and a judgment rule. The judgment rule includes a normal range corresponding to the working data. The second monitoring data is compared with the corresponding normal range. If all the second monitoring data is within the normal range, it is determined that the lithography system returns to normal.

[0084] As another optional implementation, the analysis and decision engine can determine whether the lithography system returns to normal according to the second monitoring data and a logic rule. Specifically, the logic rule is preset for the multi-parameter linkage state in advance, and then the second monitoring data is combined and judged according to the logic rule, so as to determine whether the lithography system returns to normal. For example, the multi-parameter linkage state, such as the normal state of the wafer transport in the transport subsystem, needs to meet the conditions of "normal motor speed, ≤0.1 mm position error of the conveying belt, and normal wafer detection sensor signal" at the same time. The corresponding logic rule can be "normal motor speed AND ≤0.1 mm position error of the conveying belt AND normal wafer detection sensor signal".

[0085] As an example, if the reason for the abnormality of the lithography system is that the power supply is switched from mains to battery, when the mains is restored in the second monitoring data, it indicates that the lithography system returns to normal.

[0086] Optionally, after the battery module receives the power supply instruction, it starts to supply power to the transport subsystem and the exposure subsystem.

[0087] Optionally, the analysis and decision engine controls the detection module to calibrate. Specifically, the monitoring module can be controlled to calibrate the readings. At the same time, the analysis and decision engine also controls the transport subsystem to perform self-checking. Specifically, the mask table position and the wafer table position in the transport subsystem can be controlled to perform position alignment and origin calibration. After the self-checking and calibration are completed, the current data of the exposure subsystem and the transport subsystem are obtained, and based on the working data and the current data, the transport subsystem and the exposure subsystem are controlled to perform the breakpoint exposure processing. The working data is the data sent by the transport subsystem and the exposure subsystem to the storage module when the abnormality occurs.

[0088] In this embodiment, the analysis and decision engine determines whether the lithography machine system returns to normal according to the second monitoring data collected in real time, and if so, sends a power supply instruction to the power module, controls each monitoring module to calibrate, controls the transmission subsystem to perform self-checking, and obtains working data from the storage module, controls the transmission subsystem and the exposure subsystem to perform breakpoint continuous exposure processing based on the working data, so that the lithography machine system continues the action before the anomaly. After the anomaly is recovered in this embodiment, the lithography machine state at the time of the anomaly is timely based on the breakpoint continuous exposure, the exposure accuracy after recovery is ensured to be consistent with the time of the anomaly, and the nanoscale accuracy is ensured. In addition, from the timely response at the time of the anomaly to the breakpoint continuous exposure at the time of the anomaly recovery, the overall scheme is automatically executed in the whole process, without manual intervention, avoiding data loss and equipment damage caused by manual response lag, and ensuring the controllability of the lithography process under abnormal working conditions.

[0089] Next, the specific steps of the analysis and decision engine controlling each monitoring module to calibrate and controlling the transmission subsystem to perform self-checking in the above steps are introduced.

[0090] Optionally, the reading calibration of each monitoring module is controlled.

[0091] The reading calibration refers to a process of eliminating the reading deviation of each monitoring module caused by abnormal working conditions through a preset standard reference, a compensation algorithm or a physical adjustment, and ensuring that the measured value output by the monitoring module is consistent with the actual physical quantity.

[0092] Specifically, the analysis and decision engine first initializes each monitoring module, and then performs reading calibration. As an optional implementation, a reference material with a known accurate value can be used as a reference to adjust the reading of the monitoring module to be consistent with the standard part. In addition, the reading of the monitoring module can also be corrected by calculating the compensation amount in real time through an algorithm.

[0093] Optionally, according to the working data, the positions of the mask table and the wafer table in the transmission subsystem are controlled to return to the state before the anomaly, and the original position self-checking is performed.

[0094] Optionally, according to the positions of the mask table and the wafer table at the time of the anomaly in the working data, the servo motor drives the mask table and the wafer table to make the mask table and the wafer table return to the positions at the time of the anomaly.

[0095] As an optional implementation, the process of the original position self-checking includes a preparation stage, a coarse calibration stage, a fine calibration stage, an error compensation stage and a verification stage.

[0096] Specifically, in the preparation stage, the state of the equipment in the transmission subsystem is verified, and the equipment is brought into a calibration mode in which all sensors are activated and all drivers are initialized. In the coarse calibration stage, the motion component is moved according to the original origin position, so that the current origin position is moved at a low speed in the direction of the original origin position. The original origin position is the origin position of the mask table and the wafer table when the anomaly occurs. At the same time, the monitoring module for coarse positioning, such as the mechanical limit switch or the original distance photoelectric sensor, is triggered to achieve coarse positioning. In the fine calibration stage, the motion component is driven to move at a slower speed to the original origin position, and the monitoring module for fine positioning, such as the grating ruler zero point mark, the encoder zero pulse, and the high-precision proximity switch, is triggered to achieve fine positioning. In the error compensation stage, the current origin position determined by fine positioning is compared with the theoretical origin position preset when the equipment is shipped, and the deviation value is calculated. The deviation value may be caused by compensation for mechanical wear and temperature changes, and the deviation value is updated to the compensation table. In the verification stage, the origin position self-checking and the motion specified distance test can be repeated according to the preset number of times, and the position value and the instruction value fed back by the monitoring module are compared to verify the accuracy of the current origin position. After the verification stage ends, a calibration log can be generated for traceability.

[0097] In the embodiment, the control monitoring module completes reading calibration, so that the reading of the monitoring module is accurate, and the positions of the mask table and the wafer table are restored to the state before the anomaly, and the origin position self-checking is performed, so that the mask table and the wafer table can accurately complete the movement, and the exposure is continued from the position before the anomaly.

[0098] As an optional implementation, after the positions of the mask table and the wafer table in the transmission subsystem are restored to the state before the anomaly, and the origin position self-checking is performed, an environmental verification compensation process can also be performed.

[0099] The environmental verification compensation process can be: the analysis decision engine compares the environmental data such as temperature, humidity and air pressure values in the obtained second monitoring data with the corresponding preset environmental data threshold, and triggers compensation if one environmental data exceeds the corresponding environmental data threshold. Specifically, based on the compensation model, the compensation scheme is determined according to the deviation value from the environmental data threshold. For example, for every 1℃ increase in temperature, the exposure dose increases by 0.3%, for example, if the temperature increases by 1.8℃, the exposure dose increases by 0.54%, and for every 1℃ increase in temperature, the corrected laser wavelength is 0.02nm; for every 1%RH decrease in humidity, the ion fan power increases by 5%; for every 0.1kPa decrease in air pressure, the vacuum adsorption pressure increases by 0.08kPa. After determining the compensation scheme, a plurality of driving instructions are generated to drive the corresponding devices in the transmission subsystem and the exposure subsystem to perform simulation verification first, and the running data is recorded. If the environmental temperature is still higher than the temperature data threshold within a preset time, a new compensation scheme is generated and re-executed. Exemplarily, in the new compensation scheme, for every 1℃ increase in temperature, the exposure dose increases by 0.8%. In addition, a preset high-risk environmental data threshold is provided. If the environmental data exceeds the high-risk environmental data threshold, a first-level warning is issued to the user while the compensation scheme is generated and the simulation is performed. If the number of compensation failures exceeds a preset compensation number threshold, the system is operated at a reduced speed until it stops, and a second-level warning is issued to the user. The second-level warning is used to indicate manual exclusion of the warning.

[0100] Figure 3 is a flowchart of a breakpoint exposure processing provided by an embodiment of the present application. As shown in Figure 3 The specific process of controlling the transmission subsystem and the exposure subsystem based on the working data in the above steps for breakpoint exposure processing is as follows:

[0101] S301, determining whether the transmission subsystem and the exposure subsystem meet the exposure continuation condition.

[0102] The exposure continuation condition refers to the prerequisite condition for the transmission subsystem and the exposure subsystem to continue to perform the exposure operation.

[0103] As an optional implementation, the execution process of step S301 can be: based on the analysis-determined fault level, a preliminary screening is performed, then the exposure continuation constraints corresponding to the fault level are extracted from the historical repair case library, and the self-checking and calibration results of the transmission subsystem and the exposure subsystem are checked to see whether they meet the exposure continuation constraints, the state stability is confirmed through repeated transmission tests and empty exposure verification, and if the stability meets the requirements, the exposure continuation condition is met.

[0104] S302, if yes, obtaining the current data of the exposure subsystem and the transmission subsystem.

[0105] Specifically, the current data of the exposure subsystem and the transmission subsystem is the data currently collected by the corresponding monitoring module.

[0106] S303, based on the working data and the current data, controlling the transmission subsystem and the exposure subsystem to perform the break-point continuous exposure processing.

[0107] Optionally, according to the working data and the current data, a target parameter and a target instruction are determined, and the transmission subsystem and the exposure subsystem are controlled to perform the break-point continuous exposure processing according to the target parameter and the target instruction. The target parameter includes an exposure dose, an exposure time, etc., and the target instruction includes a motion control instruction, etc.

[0108] In this embodiment, it is judged whether the transmission subsystem and the exposure subsystem meet the continuous exposure condition, and if so, the transmission subsystem and the exposure subsystem are controlled to perform the break-point continuous exposure processing based on the working data and the current data. The embodiment guarantees the safety of the equipment by judging whether the continuous exposure condition is met.

[0109] Next, refer to Figure 4 The specific steps of judging whether the transmission subsystem and the exposure subsystem meet the continuous exposure condition in the above step S301 are introduced. Among them, Figure 4 is a flowchart of judging the continuous exposure condition provided by the embodiment of the present application.

[0110] S401, determining a fault level.

[0111] Optionally, the analysis decision engine analyzes the working data based on a fault tree analysis algorithm, and generates a fault analysis report. The fault analysis report includes a fault link, a fault influence range, a fault cause, and a fault level. Specifically, the analysis decision engine extracts fault data, a fault timestamp, fault correlation data, and an abnormal code from the monitoring data. The fault data is directly related to the current abnormality, the fault correlation data includes indirectly related data to the current abnormality, and the abnormal code is, for example, a communication timeout code and a numerical jump.

[0112] Optionally, the fault level can include four levels of prompt, ordinary, serious, and fatal. The specific level division can be set according to actual needs, which is not limited in the embodiment.

[0113] S402, determining the corresponding continuous exposure constraint of the fault level in the repair case library, and judging whether the self-checking and calibration results of the monitoring module and the transmission subsystem meet the continuous exposure constraint.

[0114] Optionally, the repair case library is used to store the historical fault level corresponding fault analysis report, corresponding repair case and exposure constraint. Exemplarily, the repair case library defines the exposure constraint of the "ordinary level fault" as: the transmission subsystem: mechanical arm positioning error ≤ 50 μm, vacuum chuck pressure in the set value ± 10% range; the exposure subsystem: laser energy stability ≥ 95%, mask table and silicon wafer table synchronization error ≤ 2 μm.

[0115] Optionally, the exposure constraint corresponding to the fault level is extracted from the historical repair case library, such as transmission positioning accuracy, exposure power stability and other quantitative standards. Then check whether the self-checking and calibration results of the transmission subsystem and the exposure subsystem meet the exposure constraint, such as the transmission subsystem, such as the positioning error of the silicon wafer transmission and the chuck pressure, and the exposure subsystem, such as the laser energy stability and the overlay accuracy.

[0116] S403, if yes, it is determined that the transmission subsystem and the exposure subsystem meet the exposure condition.

[0117] As an optional embodiment, in combination with the fault level and whether the exposure constraint, it is determined whether the self-checking and calibration results of the monitoring module and the transmission subsystem meet the exposure constraint. Exemplarily, if the fault level is "serious" but there is a similar fault exposure success case in the repair case library, and the self-checking and calibration results of each subsystem meet the constraint, the exposure is allowed; if any core index of the transmission subsystem or the exposure subsystem, such as the silicon wafer table positioning accuracy and the laser power, does not meet the exposure constraint, it is directly determined that the exposure condition is not met; if all conditions are met, the exposure permission instruction is generated, and the key parameters such as the current deviation value, the monitoring sensor state and the like are recorded to the log for subsequent tracing.

[0118] In this embodiment, the fault level is determined, the fault level corresponding exposure constraint in the repair case library is determined, and it is judged whether the self-checking and calibration results of the monitoring module and the transmission subsystem meet the exposure constraint. If yes, it is determined that the transmission subsystem and the exposure subsystem meet the exposure condition, thereby ensuring the safety of the equipment.

[0119] Next, refer to Figure 5 The specific steps of controlling the transmission subsystem and the exposure subsystem to perform the breakpoint exposure processing based on the working data and the current data in the above step S303 are introduced. Among them, Figure 5 is another flowchart of the breakpoint exposure processing provided by the embodiment of the application.

[0120] S501, according to the working data and the current data, consistency check is performed to determine the to-be-processed area and the to-be-processed step.

[0121] The area to be processed can be a specific spatial range that requires processing, such as a specific area on a silicon wafer that has not yet completed exposure, etching, or other processing. The steps to be processed can be specific processing steps that need to be performed in sequence, such as the exposure and alignment verification steps that follow after wafer transfer and positioning.

[0122] Specifically, a consistency check is performed based on the valid process data in the working data and the hardware status data in the current data. The area to be processed and the processing steps to be processed are determined based on the check results. Valid process data includes exposure progress, wafer positioning coordinates, and process parameters of completed layers. Hardware status data includes the actual position of the wafer stage and actual sensor readings.

[0123] Optionally, a consistency check is used to characterize whether the working data and the current data match. If the consistency check passes, it means that there is no conflict between the current data and the working data or the deviation is within the allowable range, thereby confirming the accuracy of the data logic and the reliability of the status record.

[0124] As an optional implementation method, first, retrieve the processing position mark and step execution node in the working data to form a reference benchmark, obtain the real-time processing position and current step progress in the current data to form a comparison object, perform spatial calibration on the processing positions of the two, confirm whether the position connection is continuous, and eliminate position offsets caused by abnormalities. Perform a timing check on the step execution nodes to confirm whether the transition between the completed steps and the steps to be executed is smooth to eliminate process breaks. Finally, combined with the verification results of the position connection and step transition, comprehensively determine the area range that needs to be processed continuously and the corresponding step sequence.

[0125] S502: Determine target parameters and target instructions based on the working data, current data, the area to be processed, and the steps to be processed.

[0126] As an optional implementation method, a fault analysis report generated by the analysis and decision engine is obtained, and then the adjustment plan corresponding to the current fault is determined based on the fault analysis report and a pre-established fault case library. Finally, the target parameters and target instructions are determined based on the adjustment plan, working data, current data, area to be processed, and steps to be processed corresponding to the current fault.

[0127] S503: Control the transmission subsystem and the exposure subsystem to perform breakpoint continuous exposure processing according to the target parameters and the target instructions.

[0128] Specifically, the target parameters are loaded into the transmission subsystem and the exposure subsystem, and the target instructions are sent to the corresponding subsystems in the transmission subsystem and the exposure subsystem in sequence, so that the transmission subsystem and the exposure subsystem execute breakpoint continuous exposure processing based on the target parameters and target instructions.

[0129] In this embodiment, the consistency check provides a basis for the subsequent step and parameters of the breakpoint resume exposure.

[0130] As an optional implementation, the following steps can be performed before step S502.

[0131] Optionally, the consistency check result of the transmission subsystem, the consistency check result of the exposure subsystem, the continue exposure button, and the terminate exposure button are displayed on the breakpoint resume exposure interactive interface.

[0132] wherein, Figure 6 is a schematic diagram of a breakpoint resume exposure interactive interface provided by an embodiment of the present application. As shown in Figure 6 The breakpoint resume exposure interactive interface can display the consistency check results of each subsystem in the transmission subsystem and the consistency check results of each subsystem in the exposure subsystem. If the results are consistent, the item is displayed in green, and if the results are inconsistent, the item is displayed in red.

[0133] In Figure 6 , the above-mentioned subsystems are divided according to the hardware system, the software system, and the safety system. Specifically, the hardware system detection includes the light source system, the motion control system, the vacuum system, and the cooling system. The light source system includes the mercury lamp state and the light path system. The motion control system includes the wafer table and the mask table. The vacuum system includes the vacuum chamber and the vacuum pump. The cooling system includes the cooling liquid circulation and the cooling pipeline. The software system detection includes the control system software and the process data. The control system software includes the system configuration and the fault record. The process data includes the exposure data and the process recipe. The safety system detection includes the protection device and the alarm system. The protection device includes the mechanical protection and the electrical protection. The alarm system includes the audible and visual alarm and the alarm information. Exemplarily, in the hardware system detection, if the mask table in the motion control system passes the consistency check, the item is displayed in green.

[0134] In addition, the breakpoint resume exposure interactive interface can also display the fault reason and the current state. If all subsystems pass the consistency check, the current state is repaired, and if there is a subsystem that does not pass the consistency check, the current state is not repaired. When the current state is not repaired, the breakpoint resume exposure interactive interface can also display the reason for not being repaired.

[0135] Optionally, in response to the user's operation on the continue exposure button or the terminate exposure button on the breakpoint resume exposure interactive interface, the breakpoint resume exposure process or the terminate exposure process is performed.

[0136] Optionally, when the user clicks the continue exposure button on the breakpoint exposure interaction interface, the breakpoint exposure process is executed, and when the user clicks the terminate exposure button on the breakpoint exposure interaction interface, the terminate exposure process is executed. The breakpoint exposure process is step S502 and subsequent steps. The terminate exposure process can be sending a power-off instruction to the power module to stop power supply.

[0137] In this embodiment, the breakpoint exposure interaction interface is provided for the user, thereby increasing the user control port, enabling the user to control the breakpoint exposure progress, and further ensuring the breakpoint exposure accuracy.

[0138] Figure 7 is a flowchart of a process for determining a target parameter and a target instruction provided by the present application. Next, referring to Figure 7 The process for determining the target parameter and the target instruction in step S502 is described.

[0139] S701, obtaining a fault analysis report generated by the analysis and decision engine, the fault analysis report being obtained by the analysis and decision engine based on the fault tree analysis algorithm on the working data.

[0140] Optionally, how to generate the fault analysis report is described in step S401, and the present embodiment will not be described again.

[0141] S702, determining an adjustment scheme corresponding to the current fault according to the fault analysis report and a pre-established fault case library.

[0142] The adjustment scheme is a set of executable actions that adapt to the current system state and the processing progress.

[0143] As an optional implementation, the core features of the fault analysis report are extracted, compared with the feature tag system of the fault case library, the historical case with the highest coincidence degree is screened, and the adjustment scheme adapting to the current fault is formed.

[0144] S703, determining the target parameter and the target instruction according to the adjustment scheme corresponding to the current fault, the working data, the current data, the to-be-processed region and the to-be-processed step.

[0145] As an optional implementation, the specific influence of the fault on the to-be-processed region integrity and the to-be-processed step continuity is analyzed, the working data and the current data are associated, the influence of the fault residue on the subsequent processing is checked, the target process parameter dimension and the execution instruction type are extracted from the adjustment scheme according to the characteristic requirements of the to-be-processed region and the process logic of the to-be-processed step, finally, the quantitative value of the target parameter is accurately defined according to the preset fault compensation logic, and the execution trigger condition and the process embedding point of the target instruction are explicitly defined, so as to ensure that the parameter and the instruction cooperatively cover the fault residual risk and support the stable and high-quality execution of the to-be-processed link.

[0146] Exemplarily, when the fault cause is "temperature / pressure data abnormal, photoresist fluidity change, micro-nano bubble residue of pre-interruption exposure pattern", the adjustment scheme corresponding to the fault case library is determined as follows: after such interruption in the past, direct continuation of exposure will cause pattern defects due to bubbles. Therefore, the target parameters and target instructions determined are as follows: before continuation of exposure, the step of "photoresist vacuum bubble removal pretreatment" is performed, that is, the vacuum degree is set to -0.08 MPa and lasts for 20 seconds, and the exposure dose is reduced by 5% to match the change in photosensitivity of the photoresist after bubble removal and reduce the influence of bubbles on the pattern.

[0147] Exemplarily, when the fault cause is "shock absorber height data abnormal, equipment levelness affected, wafer local alignment offset before interruption of exposure". The adjustment scheme corresponding to the fault case library is determined as follows: after the same interruption in the past, continuation of exposure is prone to cause multi-layer lithography alignment error accumulation due to incomplete recovery of levelness. Therefore, the target parameters and target instructions determined are as follows: the sampling density of wafer alignment marks is increased, such as from 1 mark per quadrant to 2 marks per quadrant, and a levelness compensation algorithm is enabled to dynamically adjust the worktable Z-axis compensation amount according to the height data of the shock absorber after correction, thereby improving the alignment accuracy.

[0148] As an optional implementation, the analysis and decision engine can utilize the overlapping area gray scale difference algorithm, the coordinate offset correction algorithm, and the exposure dose dynamic compensation algorithm to determine the target parameters and target instructions based on the adjustment scheme corresponding to the current fault, the working data, the current data, the to-be-processed area, and the to-be-processed step. Exemplarily, the exposure data in the last 10 ms of the working data before the abnormal interruption is first retrieved, including coordinates, dose, pattern parameters, etc., then the coordinate offset correction algorithm is used to determine the start point of continuation of exposure, then the gray scale interpolation algorithm is applied in the 50 μm wide overlapping area to determine the transition pattern data, and finally the exposure dose dynamic compensation algorithm is used to determine the continuation of exposure parameters in combination with real-time environmental parameters.

[0149] In this embodiment, the adjustment scheme corresponding to the current fault is determined according to the fault analysis report and the fault case library, and the target parameters and target instructions are determined according to the adjustment scheme corresponding to the current fault, the working data, the current data, the to-be-processed area, and the to-be-processed step, so as to accurately restore the lithography state and realize nanoscale precision continuation of exposure.

[0150] As an optional implementation, the step S503 can further include the following step.

[0151] Optionally, the control transmission subsystem and the exposure subsystem perform simulation exposure on the empty wafer according to the target parameters and target instructions.

[0152] Specifically, the motion device is controlled to place a dummy wafer, and perform a simulation exposure on the dummy wafer according to the target parameters and the target instructions, so as to verify the light path and the motion control progress.

[0153] Optionally, the simulation exposure result and the simulation working data are collected, and the target parameters and the target instructions are adjusted and optimized according to the simulation exposure result and the simulation working data.

[0154] Specifically, if the simulation exposure result shows that the device is damaged, repair parameters and repair instructions are generated, and the repair parameters and the old target parameters are taken as new target parameters, and the repair instructions and the old target instructions are taken as new target instructions. The old target parameters and the old target instructions are the target parameters and the target instructions obtained in step S502.

[0155] As an example, if the simulation exposure result shows that the motor is overheated, the analysis and decision engine generates target parameters and target instructions in combination with temperature sensor data in the simulation working data, wherein the temperature sensor data is 85℃, the temperature threshold is 60℃, the generated target parameters and target instructions are: immediately stop the motor operation, start the cooling fan for forced cooling; after the temperature drops to below 50℃, check whether the motor cooling fins are dusty, and perform a cleaning step: if compressed air is used to blow along the fin direction, restart and verify whether the motor temperature is stable in the interval of 45-55℃ by idling for 30 seconds. If yes, the old target parameters and the old target instructions are executed.

[0156] As another example, if it is found that the light path is offset, such as the laser beam center deviates from the target by 0.1mm, the generated target parameters and target instructions are: call the light path calibration module to display the offset real-time data; step by step prompt to adjust the mirror knob, such as rotating 1 / 4 turn clockwise, the light beam moves right by 0.02mm, etc.; after calibration, perform 3 times of laser positioning detection, and confirm that the deviation is ≤0.01mm to be qualified. The old target parameters and the old target instructions are executed.

[0157] In this embodiment, the simulation exposure is performed on the dummy wafer by controlling the transmission subsystem and the exposure subsystem according to the target parameters and the target instructions, the simulation exposure result and the simulation working data are collected, and the target parameters and the target instructions are adjusted and optimized according to the simulation exposure result and the simulation working data, so as to accurately restore the lithography state and realize nanoscale precision exposure.

[0158] As an optional implementation, before performing the continuation exposure processing based on the target parameters and the target instructions, a connection with a manufacturing execution system (MES) and an advanced process control system (APC) is reestablished. The MES is used to connect the upper production plan of an enterprise and the lithography system. The APC is a production control tool based on data modeling and algorithm optimization. By reestablishing the connection with the MES and the APC, a synchronous production plan can be implemented to ensure line cooperation.

[0159] The embodiment of the present application further provides a lithography system, which comprises a plurality of monitoring modules, an analysis and decision engine, a storage module, a transmission subsystem, an exposure subsystem and a power module, and is used for executing the lithography system burst fault processing method.

[0160] The above merely describes the specific implementation of the present application, but the protection scope of the present application is not limited to this. Any person skilled in the art can easily think of the changes or replacements within the technical range disclosed by the present application, which should be covered by the protection scope of the present application.

Claims

1. A method for handling sudden faults of a lithography machine, characterized in that: The method is applied to a lithography system, which includes: multiple monitoring modules, an analysis and decision engine, a storage module, a transmission subsystem, an exposure subsystem, and a power module. The method includes: The analysis and decision engine receives the first monitoring data collected in real time by each monitoring module, determines whether the lithography machine system has an abnormality based on the first monitoring data, and if so, sends a pause instruction and a data storage instruction to the transmission subsystem and the exposure subsystem, wherein the pause instruction is used to instruct the transmission subsystem and each subsystem in the exposure subsystem to suspend operation, and the data storage instruction is used to instruct the transmission subsystem and the exposure subsystem to send working data to the storage module; The storage module stores the working data in the non-volatile storage unit and the offline storage unit in the storage module, and sends a storage completion message to the analysis and decision engine after the storage is completed. When an offline situation occurs, the working data is stored in the offline storage unit. When recovering from the offline situation, the data cached in the offline storage unit is synchronized to the non-volatile storage unit; The analysis and decision engine sends a power-off instruction to the power module in response to the storage completion information, so that the power module stops supplying power; The method further comprises: The analysis and decision engine receives the second monitoring data collected in real time by each of the monitoring modules, determines whether the lithography machine system has returned to normal based on the second monitoring data, and if so, sends a power supply instruction to the power module, controls each of the monitoring modules to perform calibration, controls the transmission subsystem to perform self-test, obtains the working data from the storage module, and controls the transmission subsystem and the exposure subsystem to perform breakpoint-resume exposure processing based on the working data, so that the lithography machine system continues to operate before the abnormality; The controlling the transmission subsystem and the exposure subsystem to perform breakpoint continuous exposure processing based on the working data includes: Determining whether the transmission subsystem and the exposure subsystem meet the continuous exposure condition; If yes, obtaining current data of the exposure subsystem and the transmission subsystem; Based on the working data and the current data, controlling the transmission subsystem and the exposure subsystem to perform breakpoint continuous exposure processing; The determining whether the transmission subsystem and the exposure subsystem meet the continuous exposure condition includes: Determine the fault level; Determine the continued exposure constraint corresponding to the fault level in the repair case library, and judge whether the self-test and calibration results of the monitoring module and the transmission subsystem meet the continued exposure constraint; If so, it is determined that the transmission subsystem and the exposure subsystem meet the continuous exposure condition.

2. The method for handling sudden faults of a lithography machine according to claim 1, characterized in that: The controlling each monitoring module to perform calibration and controlling the transmission subsystem to perform self-test includes: Controlling each of the monitoring modules to complete reading calibration; According to the working data, the positions of the mask stage and the wafer stage in the transmission subsystem are controlled to recover to the state before the abnormality, and a self-check of the origin position is performed.

3. The method for handling sudden faults of a lithography machine according to claim 1, characterized in that: The controlling the transmission subsystem and the exposure subsystem to perform breakpoint continuous exposure processing based on the working data and the current data includes: Perform consistency check based on the working data and the current data to determine the area to be processed and the steps to be processed; Determining target parameters and target instructions based on the working data, the current data, the area to be processed, and the steps to be processed, wherein the target parameters include: exposure dose; According to the target parameters and the target instructions, the transmission subsystem and the exposure subsystem are controlled to perform breakpoint continuous exposure processing.

4. The method for handling sudden faults of a lithography machine according to claim 3, characterized in that: Before determining target parameters and target instructions based on the working data, the current data, the area to be processed, and the steps to be processed, the method further includes: Displaying the consistency check result of the transmission subsystem, the consistency check result of the exposure subsystem, a continue exposure button, and a terminate exposure button on the breakpoint continuous exposure interaction interface; Respond to the user's operation on the continue exposure button or the terminate exposure button on the breakpoint continued exposure interaction interface, and execute the breakpoint continued exposure process or terminate the exposure process.

5. The method for handling sudden failures of a lithography machine according to claim 3, wherein: The determining of target parameters and target instructions based on the working data, the current data, the area to be processed, and the steps to be processed includes: Obtaining a fault analysis report generated by the analysis and decision engine, wherein the fault analysis report is obtained by the analysis and decision engine analyzing the working data based on a fault tree analysis algorithm; Determine the adjustment plan corresponding to the current fault based on the fault analysis report and the pre-established fault case library; Target parameters and target instructions are determined according to the adjustment plan corresponding to the current fault, the working data, the current data, the area to be processed, and the steps to be processed.

6. The method for handling sudden faults of a lithography machine according to claim 3, characterized in that: Before controlling the transmission subsystem and the exposure subsystem to perform breakpoint continuous exposure processing according to the target parameter and the target instruction, the method further includes: Controlling the transmission subsystem and the exposure subsystem to perform simulated exposure on an empty wafer according to the target parameters and the target instructions; Collecting simulated exposure results and simulated working data, and adjusting and optimizing the target parameters and the target instructions according to the simulated exposure results and the simulated working data.

7. A lithography system, characterized in that: The lithography machine system includes multiple monitoring modules, an analysis and decision engine, a storage module, a transmission subsystem, an exposure subsystem and a power module. The lithography machine system is used to execute the lithography machine sudden failure handling method described in any one of claims 1-6.

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