Single-pole single-throw phase change switch based on microstrip transmission line structure

Abstract

The invention provides a single-pole single-throw phase change switch based on a microstrip transmission line structure, and relates to the technical field of radio frequency microwave electronics. The single-pole single-throw phase change switch based on the microstrip transmission line structure comprises two microstrip metal transmission lines, a phase change functional area is fixedly connected between the two microstrip metal transmission lines, and heating layer electrodes are fixedly connected to the two sides of the phase change functional area. And the bottoms of the two microstrip metal transmission lines, the phase change functional area and the heating layer electrode are jointly and fixedly provided with a substrate. Through the innovative multi-layer stacked structure design, the phase change function layer and the microstrip metal transmission line are integrated on the same substrate, and a high-performance radio frequency switch function is realized. According to the switch, crystalline / amorphous conversion of the phase change functional layer is accurately controlled in a mode of cooperative work of the heater and the insulating heat conduction layer, and the switch has the excellent characteristics of ultra wide band, low insertion loss, high isolation and the like. Compared with a traditional switch, the switch is higher in response speed and lower in power consumption.

Description

Technical Field

[0001] The present invention relates to the field of radio frequency microwave electronic technology, in particular to a single-pole single-throw phase change switch based on a microstrip transmission line structure. Background Art

[0002] In the field of RF microwave electronics, traditional switches (such as mechanical switches, solid-state switches, and semiconductor RF switches) suffer from inherent drawbacks such as limited bandwidth, high high-frequency losses, slow response speed, and high power consumption. Traditional switches based on gallium arsenide (GaAs) technology operate over a narrow frequency band, significantly reducing insertion loss at high frequencies. Mechanical switches respond in milliseconds, while solid-state switches require continuous DC bias, resulting in excessive static power consumption. Furthermore, traditional switches lack compatibility with microstrip circuits and face high integration costs, making them difficult to meet the high-performance switch demands of modern communication systems.

[0003] To address these issues, the industry has developed coplanar waveguide (CPW) phase-change switches, which utilize the crystalline / amorphous transitions of germanium telluride (GeTe) to achieve switching functionality. However, this solution still has significant shortcomings: the CPW structure requires complex metal layer design and precision machining, resulting in low material utilization and high production costs; its structural characteristics are not conducive to DC bias integration and poor compatibility with microstrip circuits; and the size and layout of the phase-change region are not optimized for high-frequency applications, affecting the switch's isolation and loss performance. These limitations have prompted the development of a new generation of microstrip phase-change switch technology.

[0004] To this end, we propose a single-pole single-throw phase-change switch based on a microstrip transmission line structure. Summary of the Invention

[0005] (1) Technical problems solved

[0006] In response to the shortcomings of the existing technology, the present invention provides a single-pole, single-throw phase-change switch based on a microstrip transmission line structure, which solves the problems of low material utilization, high processing costs, and difficulty in integration with standard microstrip circuits in traditional switches, which limits their practical applications.

[0007] (2) Technical solution

[0008] To achieve the above objectives, the present invention is implemented through the following technical solutions: a single-pole single-throw phase change switch based on a microstrip transmission line structure, comprising two microstrip metal transmission lines, a phase change functional region fixedly connected between the two microstrip metal transmission lines, heating layer electrodes fixedly connected to both sides of the phase change functional region, and a base fixedly mounted on the bottom of the two microstrip metal transmission lines, the phase change functional region, and the heating layer electrodes;

[0009] The phase change functional area includes a heater, and the heater is fixedly connected to the two heating layer electrodes and fixedly installed on the top of the substrate. The outer surface of the heater is wrapped with an insulating thermal conductive layer, and the insulating thermal conductive layer is fixedly connected to the substrate and two microstrip metal transmission lines. The top of the insulating thermal conductive layer is fixedly connected to a phase change functional layer, and the two ends of the phase change functional layer are respectively fixedly connected to adjacent microstrip metal transmission lines. A passivation layer is fixedly connected between the top of the phase change functional layer and the two microstrip metal transmission lines.

[0010] Preferably, the material of the two microstrip metal transmission lines is Au.

[0011] Through the above solution, excellent conductivity and high-frequency signal transmission performance can be ensured, and transmission loss can be reduced.

[0012] Preferably, the material of the heater is any one of W, Mo and Pt.

[0013] Through the above scheme, a variety of high melting point metal options are provided to ensure stable heating performance and long-term reliability.

[0014] Preferably, the material of the insulating heat-conducting layer is any one of Si3N4, AlN, and Al2O3.

[0015] Through the above solution, the design not only ensures good heat conduction efficiency but also achieves effective electrical isolation.

[0016] Preferably, the material of the phase change functional layer is GeTe.

[0017] Through the above scheme, the material has obvious crystalline / amorphous conversion characteristics, which can achieve fast switching of low-loss conduction and high-impedance shutdown.

[0018] Preferably, the material of the passivation layer is any one of SiO2 and Si3N4.

[0019] Through the above solution, reliable surface protection and environmental isolation are provided, thereby extending the service life of the device.

[0020] Preferably, the substrate comprises a dielectric block, and the heater, insulating thermal conductive layer, microstrip metal transmission line, and heating layer electrode are all fixedly mounted on the top of the dielectric block, and the bottom of the dielectric block is fixedly connected to a first ground electrode.

[0021] Through the above solution, the dielectric block material serves as the dielectric layer of the microstrip transmission line.

[0022] Preferably, the base includes a film, and the heater, insulating thermal conductive layer, microstrip metal transmission line, and heating layer electrode are all fixedly installed on the top of the film, the bottom of the film is fixedly connected to a second grounding electrode, and the bottom of the second grounding electrode is fixedly connected to the substrate.

[0023] Through the above solution, the thin film dielectric material is used as the dielectric layer of the microstrip transmission line.

[0024] Preferably, the substrate is made of any one of Si, Al2O3 ceramics and sapphire.

[0025] Through the above solution, the range of substrate selection is further expanded to meet diverse application needs.

[0026] (3) Beneficial effects

[0027] The present invention provides a single-pole single-throw phase change switch based on a microstrip transmission line structure.

[0028] Beneficial effects:

[0029] This single-pole, single-throw phase-change switch, based on a microstrip transmission line structure, integrates the phase-change functional layer and the microstrip metal transmission line on the same substrate through an innovative multi-layer stacking structure design, achieving high-performance RF switching capabilities. The switch uses a heater and an insulating thermal conductive layer to precisely control the crystalline / amorphous transition of the phase-change functional layer, exhibiting excellent characteristics such as ultra-wideband, low insertion loss, and high isolation. Compared with traditional switches, it has faster response speed and lower power consumption. The microstrip line structure design significantly improves compatibility with existing RF systems and reduces manufacturing costs. In particular, the protection of the passivation layer and the optimized design of the substrate ensure the long-term reliability of the device in complex environments. It can be widely used in high-frequency systems such as 5G / 6G communications and millimeter-wave radar. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 A top view of the present invention;

[0031] Figure 2 is a cross-sectional view of a first embodiment of the present invention;

[0032] Figure 3 is a cross-sectional view of a second embodiment of the present invention;

[0033] Figure 4 A perspective view of a first embodiment of the present invention;

[0034] Figure 5 This is a simulation result diagram of the first embodiment;

[0035] Figure 6 is a perspective view of a second embodiment of the present invention;

[0036] Figure 7 This is a simulation result diagram of the second embodiment;

[0037] Figure 8 This is a three-dimensional diagram of the second-stage series connection of the first embodiment of the present invention;

[0038] Figure 9 This is a diagram showing the simulation results of the second-stage series connection of the first embodiment;

[0039] Figure 10 This is a two-stage series stereogram of the second embodiment of the present invention;

[0040] Figure 11 This is a diagram showing the simulation results of the second embodiment of the second stage series connection;

[0041] Figure 12 Schematic diagram of the switching circuit topology.

[0042] Among them, 1. microstrip metal transmission line; 2. substrate; 211. dielectric block material; 212. first ground electrode; 221. film; 222. substrate; 223. second ground electrode; 3. heating layer electrode; 4. phase change functional area; 41. phase change functional layer; 42. passivation layer; 43. heater; 44. insulating thermal conductive layer. DETAILED DESCRIPTION

[0043] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0044] First embodiment: Figure 1 、 Figure 2 、 Figure 4 、 Figure 5 、 Figure 8 、 Figure 9 As shown, a single-pole single-throw phase change switch based on a microstrip transmission line structure includes two microstrip metal transmission lines 1, a phase change functional area 4 is fixedly connected between the two microstrip metal transmission lines 1, heating layer electrodes 3 are fixedly connected to both sides of the phase change functional area 4, and a base 2 is fixedly installed at the bottom of the two microstrip metal transmission lines 1, the phase change functional area 4 and the heating layer electrodes 3;

[0045] The phase change functional area 4 includes a heater 43, and the heater 43 is fixedly connected to the two heating layer electrodes 3 and fixedly installed on the top of the substrate 2. The outer surface of the heater 43 is wrapped with an insulating thermal conductive layer 44, and the insulating thermal conductive layer 44 is fixedly connected to the substrate 2 and the two microstrip metal transmission lines 1. The top of the insulating thermal conductive layer 44 is fixedly connected to the phase change functional layer 41, and the two ends of the phase change functional layer 41 are respectively fixedly connected to the adjacent microstrip metal transmission lines 1. A passivation layer 42 is fixedly connected between the top of the phase change functional layer 41 and the two microstrip metal transmission lines 1.

[0046] The material of the two microstrip metal transmission lines 1 is Au.

[0047] The material of the heater 43 can be any one of W, Mo and Pt.

[0048] The insulating heat-conducting layer 44 may be made of any one of Si3N4, AlN, and Al2O3.

[0049] The material of the phase change functional layer 41 is GeTe.

[0050] The material of the passivation layer 42 is selected from any one of SiO 2 and Si 3 N 4 .

[0051] The substrate 2 includes a dielectric block 211 , and the heater 43 , insulating thermal conductive layer 44 , microstrip metal transmission line 1 , and heating layer electrode 3 are all fixedly mounted on the top of the dielectric block 211 , and the bottom of the dielectric block 211 is fixedly connected to a first ground electrode 212 .

[0052] It has the following advantages:

[0053] Outstanding heat dissipation performance: The dielectric block 211 and the first ground electrode 212 form an efficient heat dissipation path, which can quickly dissipate the heat generated by the heater 43, ensuring the temperature control accuracy of the phase change functional layer 41 (±1°C), and improving the repeated switching life of the switch;

[0054] Excellent high-frequency characteristics: The uniform dielectric constant (εr=9.8) of the dielectric block 211 keeps the characteristic impedance of the microstrip line at 50±0.5Ω, with an insertion loss of <3dB and a voltage standing wave ratio of <1.2 in the DC-60GHz range;

[0055] High manufacturing maturity: Using standard PCB or ceramic processing technology, the yield rate can reach over 95%, suitable for large-scale mass production.

[0056] In order to improve the isolation, multiple core functional areas can now be connected in series to form a high-isolation microstrip phase change switch.

[0057] Working principle: When an electric pulse is applied to the heating layer electrode 3, the heater 43 generates Joule heat, and the heat is evenly conducted to the phase change functional layer 41 (GeTe material) through the insulating thermal conductive layer 44, so that its temperature reaches the phase change threshold. During rapid heating and natural cooling, the phase change functional layer 41 can be reversibly transformed between the crystalline state (low resistance conduction) and the amorphous state (high resistance shutdown): in the crystalline state, a low resistance path is formed to achieve signal transmission; in the amorphous state, it presents high impedance and blocks the signal. The insulating thermal conductive layer 44 ensures both thermal conduction efficiency and electrical isolation; the passivation layer 42 protects the phase change material from environmental influences; the microstrip metal transmission line 1 (Au) and the first ground electrode 212 form a complete microstrip transmission line structure to ensure low-loss transmission of high-frequency signals. The entire switch is driven by pulses to achieve nanosecond switching, has non-volatile memory characteristics, and can maintain its state without continuous power supply.

[0058] Second embodiment: Figure 1 、 Figure 2 、 Figure 6 、 Figure 7 、 Figure 10 、 Figure 11 As shown, a single-pole single-throw phase change switch based on a microstrip transmission line structure includes two microstrip metal transmission lines 1, a phase change functional area 4 is fixedly connected between the two microstrip metal transmission lines 1, heating layer electrodes 3 are fixedly connected to both sides of the phase change functional area 4, and a base 2 is fixedly installed at the bottom of the two microstrip metal transmission lines 1, the phase change functional area 4 and the heating layer electrodes 3;

[0059] The phase change functional area 4 includes a heater 43, and the heater 43 is fixedly connected to the two heating layer electrodes 3 and fixedly installed on the top of the substrate 2. The outer surface of the heater 43 is wrapped with an insulating thermal conductive layer 44, and the insulating thermal conductive layer 44 is fixedly connected to the substrate 2 and the two microstrip metal transmission lines 1. The top of the insulating thermal conductive layer 44 is fixedly connected to the phase change functional layer 41, and the two ends of the phase change functional layer 41 are respectively fixedly connected to the adjacent microstrip metal transmission lines 1. A passivation layer 42 is fixedly connected between the top of the phase change functional layer 41 and the two microstrip metal transmission lines 1.

[0060] The material of the two microstrip metal transmission lines 1 is Au.

[0061] The material of the heater 43 can be any one of W, Mo and Pt.

[0062] The insulating heat-conducting layer 44 may be made of any one of Si3N4, AlN, and Al2O3.

[0063] The material of the phase change functional layer 41 is GeTe.

[0064] The material of the passivation layer 42 is selected from any one of SiO 2 and Si 3 N 4 .

[0065] The substrate 2 includes a film 221, and the heater 43, the insulating thermal conductive layer 44, the microstrip metal transmission line 1, and the heating layer electrode 3 are all fixedly installed on the top of the film 221. The bottom of the film 221 is fixedly connected to the second ground electrode 223, and the bottom of the second ground electrode 223 is fixedly connected to the substrate 222.

[0066] The material of the substrate 222 is any one of Si, Al2O3 ceramics, and sapphire.

[0067] It has the following advantages:

[0068] Ultra-thin and lightweight: The thickness of the film 221 can be controlled at 10-50μm, and the overall device thickness is less than 100μm, with an 80% weight reduction, making it suitable for weight-sensitive applications;

[0069] Flexible integration: Sapphire or Si substrate 222 supports flexible designs with a bending radius > 5mm and can be directly integrated into curved antennas or wearable devices;

[0070] Better high-frequency performance: The nanoscale surface roughness (Ra < 10nm) of the thin film 221 further reduces transmission line loss, and in the millimeter wave band (30-60GHz), the insertion loss is improved by 15% compared to the bulk structure;

[0071] Heterogeneous integration capability: Monolithic integration with CMOS driver circuits can be achieved through the Si substrate 222, reducing interconnection losses by 70%.

[0072] In order to improve the isolation, multiple core functional areas can now be connected in series to form a high-isolation microstrip phase change switch.

[0073] Working principle: When an electric pulse is applied to the heating layer electrode 3, the heater 43 generates Joule heat, and the heat is evenly conducted to the phase change functional layer 41 (GeTe material) through the insulating thermal conductive layer 44, causing its temperature to reach the phase change threshold. During rapid heating and natural cooling, the phase change functional layer 41 can reversibly transform between the crystalline state (low resistance conduction) and the amorphous state (high resistance shutdown): in the crystalline state, a low resistance path is formed to achieve signal transmission; in the amorphous state, it presents high impedance and blocks the signal. The insulating thermal conductive layer 44 ensures both thermal conduction efficiency and electrical isolation; the passivation layer 42 protects the phase change material from environmental influences; the microstrip metal transmission line 1 (Au) and the second ground electrode 223 form a complete microstrip transmission line structure to ensure low-loss transmission of high-frequency signals. The entire switch is driven by pulses to achieve nanosecond switching, has non-volatile memory characteristics, and can maintain its state without continuous power supply.

[0074] Simulation optimization results of various types of microstrip single-pole single-throw phase-change switches in the first and second embodiments:

[0075]

[0076]

[0077] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the appended claims and their equivalents.

Claims

1. A single-pole, single-throw phase-change switch based on a microstrip transmission line structure, characterized by: The invention comprises two microstrip metal transmission lines (1), a phase change functional area (4) being fixedly connected between the two microstrip metal transmission lines (1), heating layer electrodes (3) being fixedly connected on both sides of the phase change functional area (4), and a base (2) being fixedly mounted on the bottoms of the two microstrip metal transmission lines (1), the phase change functional area (4) and the heating layer electrodes (3); The phase change functional area (4) includes a heater (43), and the heater (43) is fixedly connected to the two heating layer electrodes (3) and fixedly installed on the top of the substrate (5); the outer surface of the heater (43) is wrapped with an insulating heat-conducting layer (44), and the insulating heat-conducting layer (44) is fixedly connected to the substrate (5) and the two microstrip metal transmission lines (1); the top of the insulating heat-conducting layer (44) is fixedly connected to the phase change functional layer (41), and the two ends of the phase change functional layer (41) are respectively fixedly connected to the adjacent microstrip metal transmission lines (1); the top of the phase change functional layer (41) and the two microstrip metal transmission lines (1) are fixedly connected to a passivation layer (42).

2. The single-pole single-throw phase-change switch based on a microstrip transmission line structure according to claim 1, characterized in that: The material of the two microstrip metal transmission lines (1) is Au.

3. The single-pole single-throw phase-change switch based on a microstrip transmission line structure according to claim 1, characterized in that: The material of the heater (43) is any one of W, Mo and Pt.

4. The single-pole single-throw phase-change switch based on a microstrip transmission line structure according to claim 1, characterized in that: The material of the insulating heat-conducting layer (44) is any one of Si3N4, AlN and Al2O3.

5. The single-pole single-throw phase-change switch based on a microstrip transmission line structure according to claim 1, characterized in that: The material of the phase change functional layer (41) is GeTe.

6. The single-pole single-throw phase-change switch based on a microstrip transmission line structure according to claim 1, characterized in that: The material of the passivation layer (42) is selected from any one of SiO2 and Si3N4.

7. The single-pole single-throw phase-change switch based on a microstrip transmission line structure according to claim 1, characterized in that: The substrate (2) comprises a dielectric block (211), and a heater (43), an insulating heat-conducting layer (44), a microstrip metal transmission line (1), and a heating layer electrode (3) are all fixedly mounted on the top of the dielectric block (211), and a first grounding electrode (212) is fixedly connected to the bottom of the dielectric block (211).

8. The single-pole single-throw phase-change switch based on a microstrip transmission line structure according to claim 1, characterized in that: The substrate (2) includes a film (221), and the heater (43), the insulating heat-conducting layer (44), the microstrip metal transmission line (1), and the heating layer electrode (3) are all fixedly mounted on the top of the film (221); the bottom of the film (221) is fixedly connected to a second grounding electrode (223); and the bottom of the second grounding electrode (223) is fixedly connected to a substrate (222).

9. The single-pole single-throw phase-change switch based on a microstrip transmission line structure according to claim 8, characterized in that: The material of the substrate (222) is selected from any one of Si, Al2O3 ceramics, and sapphire.

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