Internal MZI key point voltage determination method and device, equipment and storage medium

Abstract

The invention discloses an internal MZI key point voltage determination method, device and equipment and a computer readable storage medium. According to the method, an optical signal transmission path is constructed in a cascaded MZI network, so that the optical signal transmission path at most comprises two MZIs to be tested; when only one MZI to be detected exists in the optical signal transmission path, setting the MZI to be detected as a target MZI; when two MZIs to be measured exist in an optical signal transmission path, the MZI farthest from an output port in the path is set as a target MZI, and the voltage of a thermal phase shifter of the other MZI is not changed; and dynamically changing the voltage of the thermal phase shifter of the target MZI in a preset voltage range, collecting the optical power of an output port, drawing an optical power-voltage curve, and further determining the cross point voltage and the straight-through point voltage of the target MZI. According to the invention, the problem that the internal MZI key point voltage cannot be directly measured in the prior art is effectively solved, and key data support is provided for cascade MZI network performance optimization.

Description

Technical Field

[0001] The present application relates to the field of optical computing, and in particular to a method, apparatus, device, and computer-readable storage medium for determining an internal MZI key point voltage. Background Art

[0002] In optical signal processing, Mach-Zehnder interferometers (MZIs), core optical devices, are widely used in optical signal modulation, filtering, and sensing. Cascaded MZI networks enable more complex optical signal processing functions. The performance parameters of the MZIs within them play a critical role in the performance and stability of the entire network, making accurate measurement of these parameters a critical requirement for this technology.

[0003] Traditionally, for MZIs located at the network edge and with easily accessible ports, mature measurement methods exist that can obtain their optical power-voltage curves as well as key cross-point and through-point voltages, thereby evaluating and optimizing their performance.

[0004] However, for the internal MZI of the cascaded MZI network, its port cannot be directly connected to the external collector, which makes the existing measurement methods unable to be directly applied and unable to obtain the key point voltage of the internal MZI like measuring the edge MZI. Summary of the Invention

[0005] The present application provides a method, apparatus, device and computer-readable storage medium for determining the key point voltage of an internal MZI, which can solve the technical problem in the prior art of being unable to obtain the key point voltage of the internal MZI.

[0006] In a first aspect, an embodiment of the present application provides a method for determining a voltage at a key point of an internal MZI, the method comprising:

[0007] The thermal phase shifter voltage of the target MZI and the optical power of the output port of the optical signal transmission path are collected, wherein the thermal phase shifter voltage of the target MZI changes dynamically within a preset voltage range; the optical signal is transmitted along the optical signal transmission path, and the known MZI outputs all the optical signals to the next MZI; if there is only one MZI to be tested in the optical signal transmission path, the MZI to be tested is set as the target MZI; if there are two MZIs to be tested in the optical signal transmission path, the MZI farthest from the output port of the optical signal transmission path of the two MZIs to be tested is set as the target MZI, and the thermal phase shifter voltage of the other MZI to be tested is fixed unchanged; the MZI to be tested is located within a cascaded MZI network and has unknown cross-point voltage and through-point voltage;

[0008] Obtain the optical power-voltage curve of the target MZI based on the acquisition results;

[0009] The cross-point voltage and the through-point voltage of the target MZI are determined according to the optical power-voltage curve.

[0010] In combination with the first aspect, in one embodiment, the method for determining the internal MZI key point voltage further includes:

[0011] When the optical signal input port and the optical signal output port of the known MZI are on the same side, the thermal phase shifter voltage of the known MZI is adjusted to the through point voltage of the known MZI to put the known MZI into a through state, so that all optical signals are output to the next MZI.

[0012] In combination with the first aspect, in one embodiment, the method for determining the internal MZI key point voltage further includes:

[0013] When the optical signal input port and the optical signal output port of the known MZI are on opposite sides, the thermal phase shifter voltage of the known MZI is adjusted to the cross point voltage of the known MZI to put the known MZI into a cross state so that all optical signals are output to the next MZI.

[0014] In combination with the first aspect, in one embodiment, the cross-point voltage and the through-point voltage of the target MZI are determined according to the optical power-voltage curve:

[0015] When the optical signal input port and the optical signal output port of the target MZI are on the same side, the thermal phase shifter voltage corresponding to the maximum optical power is used as the through-point voltage of the target MZI, and the thermal phase shifter voltage corresponding to the minimum optical power is used as the cross-point voltage of the target MZI.

[0016] In combination with the first aspect, in one embodiment, determining the cross-point voltage and the through-point voltage of the target MZI according to the optical power-voltage curve includes:

[0017] When the optical signal input port and optical signal output port of the target MZI are on opposite sides, the thermal phase shifter voltage corresponding to the maximum optical power is used as the cross-point voltage of the target MZI, and the thermal phase shifter voltage corresponding to the minimum optical power is used as the through-point voltage of the target MZI.

[0018] In a second aspect, an embodiment of the present application provides an internal MZI key point voltage determination device, the internal MZI key point voltage determination device comprising:

[0019] An acquisition module is configured to acquire a thermal phase shifter voltage of a target MZI and an optical power at an output port of an optical signal transmission path, wherein the thermal phase shifter voltage of the target MZI dynamically changes within a preset voltage range; an optical signal is transmitted along the optical signal transmission path, and a known MZI outputs all optical signals to a next MZI; if only one MZI to be tested exists in the optical signal transmission path, the MZI to be tested is set as the target MZI; if two MZIs to be tested exist in the optical signal transmission path, the MZI farthest from the output port of the optical signal transmission path is set as the target MZI, and the thermal phase shifter voltage of the other MZI to be tested is fixed unchanged; the MZI to be tested is located within a cascaded MZI network and has unknown cross-point voltage and through-point voltage.

[0020] The fitting module is used to obtain the optical power-voltage curve of the target MZI according to the acquisition results.

[0021] A determination module is used to determine the cross-point voltage and the through-point voltage of the target MZI according to the optical power-voltage curve.

[0022] In conjunction with the second aspect, in one implementation, the determining module is specifically configured to:

[0023] When the optical signal input port and the optical signal output port of the target MZI are on the same side, the thermal phase shifter voltage corresponding to the maximum optical power is used as the through-point voltage of the target MZI, and the thermal phase shifter voltage corresponding to the minimum optical power is used as the cross-point voltage of the target MZI.

[0024] In conjunction with the second aspect, in one implementation, the determining module is specifically configured to:

[0025] When the optical signal input port and optical signal output port of the target MZI are on opposite sides, the thermal phase shifter voltage corresponding to the maximum optical power is used as the cross-point voltage of the target MZI, and the thermal phase shifter voltage corresponding to the minimum optical power is used as the through-point voltage of the target MZI.

[0026] In a third aspect, an embodiment of the present application provides an internal MZI key point voltage determination device, which includes a processor, a memory, and an internal MZI key point voltage determination program stored on the memory and executable by the processor, wherein when the internal MZI key point voltage determination program is executed by the processor, the steps of the internal MZI key point voltage determination method described in the first aspect are implemented.

[0027] In a fourth aspect, an embodiment of the present application provides a computer-readable storage medium, on which an internal MZI key point voltage determination program is stored, wherein when the internal MZI key point voltage determination program is executed by a processor, the steps of the internal MZI key point voltage determination method described in the first aspect are implemented.

[0028] The beneficial effects of the technical solutions provided in the embodiments of the present application include:

[0029] The thermal phase shifter voltage of the target MZI and the optical power of the output port of the optical signal transmission path are collected, wherein the thermal phase shifter voltage of the target MZI changes dynamically within a preset voltage range; the optical signal is transmitted along the optical signal transmission path, and the known MZI outputs all the optical signals to the next MZI; if there is only one MZI to be tested in the optical signal transmission path, the MZI to be tested is set as the target MZI; if there are two MZIs to be tested in the optical signal transmission path, the MZI farthest from the output port of the optical signal transmission path among the two MZIs to be tested is set as the target MZI, and the thermal phase shifter voltage of the other MZI to be tested is fixed unchanged; the MZI to be tested is an MZI located inside the cascaded MZI network and whose cross-point voltage and through-point voltage are unknown; the optical power-voltage curve of the target MZI is obtained according to the collection results; the cross-point voltage and through-point voltage of the target MZI are determined according to the optical power-voltage curve. Through the embodiments of the present application, the problem of the inability to measure the key point voltage of the internal MZI in the related art is solved. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 This is a flow chart of an embodiment of a method for determining the voltage at a key point of an internal MZI according to the present application;

[0031] Figure 2 This is a schematic diagram of the position relationship between the MZI input and output ports;

[0032] Figure 3 Schematic diagram of optical power-voltage curve;

[0033] Figure 4 Schematic diagram of the cascaded MZI network structure;

[0034] Figure 5 This is a functional module diagram of an embodiment of an internal MZI key point voltage determination device of the present application;

[0035] Figure 6 This is a hardware structure diagram of the internal MZI key point voltage determination device involved in the embodiment of the present application. DETAILED DESCRIPTION

[0036] In order to enable those skilled in the art to better understand the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0037] First, some technical terms in this application are explained to facilitate those skilled in the art to understand this application.

[0038] MZI: Mach-Zehnder interferometer, an optical waveguide device designed based on the principle of optical interference, consists of two 3dB couplers and two interferometer arms. It can modulate, split or control the power of optical signals by adjusting the phase difference.

[0039] In order to make the objectives, technical solutions and advantages of this application clearer, the implementation methods of this application will be further described in detail below with reference to the accompanying drawings.

[0040] In a first aspect, an embodiment of the present application provides a method for determining an internal MZI key point voltage.

[0041] In one embodiment, referring to Figure 1 , Figure 1 This is a flow chart of an embodiment of a method for determining the voltage at a key point of an internal MZI according to the present application. Figure 1 As shown in FIG, the method for determining the voltage at the key point of the internal MZI includes:

[0042] Step S10: Collecting a thermal phase shifter voltage of a target MZI and an optical power at an output port of an optical signal transmission path, wherein the thermal phase shifter voltage of the target MZI dynamically changes within a preset voltage range; an optical signal is transmitted along the optical signal transmission path, and a known MZI outputs all optical signals to a next MZI; if there is only one MZI to be tested in the optical signal transmission path, the MZI to be tested is set as the target MZI; if there are two MZIs to be tested in the optical signal transmission path, the MZI farthest from the output port of the optical signal transmission path of the two MZIs to be tested is set as the target MZI, and the thermal phase shifter voltage of the other MZI to be tested is fixed unchanged; the MZI to be tested is an MZI located within a cascaded MZI network and whose cross-point voltage and through-point voltage are unknown.

[0043] Step S20: Obtain an optical power-voltage curve of the target MZI according to the acquisition result.

[0044] Step S30 : determining the cross-point voltage and the through-point voltage of the target MZI according to the optical power-voltage curve.

[0045] In the present application, refer to Figure 2 , Figure 2 The following is a schematic diagram of the position relationship between the MZI input and output ports, where a and c are input ports, and b and d are output ports:

[0046] In the optical signal transmission path, when the input port is a and the output port is b, or the input port is c and the output port is d, it indicates that the input port and the output port are on the same side and the MZI is in the straight-through state;

[0047] When the input port is a and the output port is d, or the input port is c and the output port is b, it indicates that the input port and the output port are on opposite sides and the MZI is in a cross state.

[0048] Reference Figure 3 , Figure 3 This is a schematic diagram of the optical power-voltage curve. The horizontal axis represents the voltage value of the MZI thermal phase shifter, and the vertical axis represents the optical power value of the output port.

[0049] Assumptions Figure 3 Characterized by MZI x Schematic diagram of the optical power-voltage curve. If MZI x If the optical signal input port and the optical signal output port are on the same side, then the MZI x In the optical power-voltage curve, the thermal phase shifter voltage value corresponding to the maximum point is MZI x The through-point voltage, the thermal phase shifter voltage corresponding to the minimum point is MZI x The cross-point voltage.

[0050] If MZI x If the optical signal input port and the optical signal output port are on opposite sides, then x In the optical power-voltage curve, the thermal phase shifter voltage value corresponding to the maximum point is MZI x The intersection voltage of the thermal phase shifter is MZI. x The through-point voltage.

[0051] The through-point voltage of the MZI and the cross-point voltage of the MZI are collectively referred to as the key point voltage of the MZI.

[0052] In the embodiment of the present application, the position and number of the MZI to be tested are determined according to the structure and layout of the cascaded MZI network, for example, Figure 4As shown, in a cascaded MZI network, there are 40 MZIs arranged in a matrix. The MZIs located in the outermost layer of the network (such as z1-z5) are edge MZIs, and the MZIs located in the middle layer (such as z6, z7, z8, z9) are internal MZIs. Their input and output ports are completely surrounded by the surrounding MZIs and cannot be directly connected to external devices. They need to be indirectly measured through the optical signal transmission path of this application.

[0053] First, measure the MZIs at the upper and lower edges one by one: for example, Figure 4 As shown, taking the measurement of the upper edge MZI as an example, first measure z1 and keep the voltages of the other three thermal phase shifters unchanged. At this time, the optical signal propagates in the direction of z1-z2-z3-z4. The light source is input from the input port In1, and the thermal phase shifter voltage of z1 is changed so that it changes dynamically within a preset voltage range (assuming it is 0V-5V). For example, the voltage is gradually increased in steps of 0.1V. At the same time, an optical power meter is used to collect the changes in the optical power value PM1 of the MZI output port at the end of the optical signal transmission path. Each time the voltage is changed, the corresponding optical power value is recorded to generate the optical power-voltage curve f of z1. z1 '.

[0054] Through analysis, the voltage corresponding to the maximum power is determined as the initial through-point voltage U1 of z1. b '; Then measure z2, at this time keep the other three thermal phase shifter voltages unchanged, and the thermal phase shifter voltage of z1 is U1 b ', the measurement process is the same as that of z1, and the optical power-voltage curve f of z2 is obtained z2 ', and the point voltage corresponding to the maximum power is the initial direct point voltage U2 of z2 b '; Similarly, measure z3 and obtain the optical power-voltage curve f of z3 z3 ', and the point voltage corresponding to the maximum power is the initial direct point voltage U3 of z3 b ';Measure z4 and obtain the optical power-voltage curve f of z4 z4 ', and the point voltage corresponding to the maximum power is z4's direct point voltage U4 b 'And the intersection voltage U4 of z4 c '.

[0055] In order to accurately determine the through-point voltage and cross-point voltage of z1 to z4, first measure z4 and keep the thermal phase shifter voltages of the other three MZIs unchanged. Among them, the thermal phase shifter voltage of z1 is U1 b ', the thermal phase shifter voltage of z2 is U2 b ', the thermal phase shifter voltage of z3 is U3 b', adjust the thermal phase shifter voltage of z4 with finer voltage regulation (such as 0.01V step), and obtain the optical power-voltage curve f of z4 according to the change of the optical power value PM1 of the output port of the terminal MZI (z4) z4 ; And the point voltage corresponding to the maximum power is the through point voltage U4 of z4 b ; The point voltage corresponding to the minimum power is the intersection voltage U4 of z4 c

[0056] The same method is used to adjust z3, z2, and z1 in sequence, and finally the optical power-voltage curves and key point voltages of all MZIs on the upper edge are obtained.

[0057] Similarly, the voltage measurement of the key points of the lower edge MZI is completed.

[0058] Record the cross-point voltage and through-point voltage of all known MZIs to provide support for the subsequent measurement of the MZI to be tested.

[0059] Furthermore, all internal MZIs are set as the MZI to be tested. Schematically, taking the upper edge MZI as a known MZI as an example, the custom program automatically generates a corresponding optical signal transmission path for the MZI to be tested. There are at most two MZIs to be tested in the optical signal transmission path. At this time, only z5 can be selected as the target MZI to generate optical signal transmission path 1: z1-z2-z3-z4-z5. In path 1, only z5 is the MZI to be tested, and z5 is set as the target MZI. First, determine the through / crossover state of the known MZI (z1-z4). The input and output ports of z1, z2, and z3 are all on the same side, so the thermal phase shifter voltages of z1, z2, and z3 are adjusted to the through-point voltage. The input and output ports of z4 are on opposite sides, so the thermal phase shifter voltage of z4 is adjusted to the crossover point voltage to ensure that the known MZI outputs all optical signals to the next MZI. Then, measure the thermal phase shifter voltage of z5 within a preset voltage range, and generate the optical power-voltage curve f of z5 based on the change in the optical power value PM3 at the output port of the MZI (z5) at the end of path 1. z5 Because the input and output ports of z5 face each other, the thermal phase shifter voltage corresponding to the maximum optical power value is z5's crosspoint voltage, and the thermal phase shifter voltage corresponding to the minimum optical power value is z5's pass-through voltage. For example, during the measurement, the thermal phase shifter voltage corresponding to the maximum optical power PM3 is 3.5V, and the thermal phase shifter voltage corresponding to the minimum optical power value is 1.2V. Therefore, z5's crosspoint voltage is 3.5V, and its pass-through voltage is 1.2V.

[0060] Because there are at most two MZIs to be tested in the optical signal transmission path, only z6 and z7 can be selected as the MZIs to be tested, generating optical signal transmission path 2: z1-z2-z3-z6-z7-z5. In path 2, only z6 and z7 are the MZIs to be tested. Similarly, the known thermal phase shifter voltages of z1 and z2 are changed to the through-point voltage, and the thermal phase shifter voltages of z3 and z5 are changed to the cross-point voltage to ensure that the known MZI outputs all optical signals to the next MZI. Then, for the MZI (z7) closest to the end port (z5) in path 2, its thermal phase shifter voltage value remains unchanged. At this time, only the thermal phase shifter voltage of z6 needs to be changed. The thermal phase shifter voltage of z6 is changed from 0V in steps of 0.1V. The power value PM2 of the output port at the end of path 2 is collected to generate the optical power-voltage curve f of z6. z6 Because the input and output ports of z6 are on opposite sides, the optical power value is maximum when z6 is in the crossover state. The corresponding thermal phase shifter voltage value when the optical power value is maximum is the crossover point voltage of z6, and the corresponding thermal phase shifter voltage value when the optical power value is minimum is the straight-through point voltage of z6. At this time, there is only one MZI (z7) to be measured in path 2: z1-z2-z3-z6-z7-z5. Referring to the measurement method of z5 in path 1, change the known thermal phase shifter voltages of z1 and z2 to the straight-through point voltage, change the thermal phase shifter voltages of z3, z6, and z5 to the crossover point voltage, measure the thermal phase shifter voltage of z7, and generate the optical power-voltage curve f of z7. z7 , the input port and output port of z7 are on the same side, so when z7 is in the through state, the optical power value is the largest. The corresponding thermal phase shifter voltage value when the optical power value is the maximum is the through point voltage of z7, and the corresponding thermal phase shifter voltage value when the optical power value is the minimum is the cross point voltage of z7.

[0061] After obtaining the key point voltages of z6 and z7, we measure z8 and z9 by analogy, generating optical signal transmission path 3: z1-z2-z8-z9-z6-z4. At this point, there are only two MZIs to be tested, z8 and z9, on path 3, and the rest are known MZIs. Similarly, we measure them according to the measurement method of z6 and z7.

[0062] In this way, all MZIs are measured traversally. That is, according to the above method, new optical signal transmission paths are continuously constructed, and the new internal MZI to be tested is used as the target MZI. The thermal phase shifter voltage of the target MZI and the optical power of the output port of the optical signal transmission path are collected. There are at most two MZIs to be tested in the optical signal transmission path. The through-point voltage, cross-point voltage and optical power-voltage curves of all MZIs can be measured.

[0063] Furthermore, in one embodiment, the method for determining the internal MZI key point voltage further includes:

[0064] When the optical signal input port and the optical signal output port of the known MZI are on the same side, the thermal phase shifter voltage of the known MZI is adjusted to the through point voltage to put the known MZI in a through state, ensuring that all optical signals are output to the next MZI.

[0065] For example, when measuring z6, after ensuring that z1 and z2 are in the through state and z3 and z5 are in the cross state, it is also necessary to ensure that z7 can transmit all optical signals to z5, so that the voltage value of z6 is the only variable affecting the output optical power value in the entire test. The input and output ports of z7 are on the same side, so it is necessary to change the thermal phase shifter voltage of z7 to the corresponding through point voltage, ensuring the accuracy of the voltage measurement at the key point of z6.

[0066] Furthermore, in one embodiment, the method for determining the internal MZI key point voltage further includes:

[0067] When the optical signal input port and the optical signal output port of the known MZI are on opposite sides, the thermal phase shifter voltage of the known MZI is adjusted to the cross point voltage to put the known MZI in a cross state, ensuring that all optical signals are output to the next MZI.

[0068] For example, when measuring z7, it is necessary to ensure that z1, z2, z3, and z6 can transmit all optical signals to z7, and that z5 at the end of path 2 can output all optical signals input by z7 to obtain PM2, so that the voltage value of z7 is the only variable in the entire test. The input and output ports of z1 and z2 are on the same side, and the input and output ports of z3 and z6 are on the opposite side. Therefore, it is necessary to change the thermal phase shifter voltage of z3 and z6 to the cross-point voltage to ensure the accuracy of the voltage measurement at the key point of z7.

[0069] Furthermore, in one embodiment, step S30 includes:

[0070] Step S301 : When the optical signal input port and the optical signal output port of the target MZI are on the same side, the thermal phase shifter voltage corresponding to the maximum optical power is used as the through-point voltage, and the thermal phase shifter voltage corresponding to the minimum optical power is used as the cross-point voltage.

[0071] In this embodiment, during the data analysis process, the optical power-voltage curve of the target MZI with the optical signal input and output ports on the same side is analyzed, and the thermal phase shifter voltage corresponding to the maximum optical power is determined as the through-point voltage, and the thermal phase shifter voltage corresponding to the minimum optical power is determined as the cross-point voltage, thereby accurately obtaining the key point voltage.

[0072] Furthermore, in one embodiment, step S30 further includes:

[0073] Step S302 : When the optical signal input port and the optical signal output port of the target MZI are on opposite sides, the thermal phase shifter voltage corresponding to the maximum optical power is used as the cross-point voltage, and the thermal phase shifter voltage corresponding to the minimum optical power is used as the through-point voltage.

[0074] In this embodiment, during data analysis, for the target MZI on the opposite side of the optical signal input and output port, based on the optical power-voltage curve, the thermal phase shifter voltage corresponding to the maximum optical power is determined as the cross-point voltage, and the thermal phase shifter voltage corresponding to the minimum optical power is determined as the through-point voltage, thereby accurately obtaining the key point voltage.

[0075] In a second aspect, an embodiment of the present application further provides a device for determining an internal MZI key point voltage.

[0076] In one embodiment, referring to Figure 5 , Figure 5 This is a functional module diagram of an embodiment of the internal MZI key point voltage determination device of the present application. Figure 5 As shown, the internal MZI key point voltage determination device includes:

[0077] An acquisition module 10 is configured to acquire a thermal phase shifter voltage of a target MZI and the optical power at an output port of an optical signal transmission path, wherein the thermal phase shifter voltage of the target MZI dynamically changes within a preset voltage range. An optical signal is transmitted along the optical signal transmission path, and a known MZI outputs all of the optical signal to a subsequent MZI. If only one MZI to be tested exists in the optical signal transmission path, the MZI to be tested is set as the target MZI. If two MZIs to be tested exist in the optical signal transmission path, the MZI farthest from the output port of the optical signal transmission path is set as the target MZI, while the thermal phase shifter voltage of the other MZI to be tested is fixed. The MZI to be tested is located within a cascaded MZI network and has unknown crosspoint voltage and throughpoint voltage.

[0078] The fitting module 20 is used to obtain the optical power-voltage curve of the target MZI according to the acquisition results.

[0079] The determination module 30 is configured to determine the cross-point voltage and the through-point voltage of the target MZI according to the optical power-voltage curve.

[0080] Furthermore, in one embodiment, when the optical signal input port and the optical signal output port of the known MZI are on the same side, the thermal phase shifter voltage of the known MZI is adjusted to the through-point voltage of the known MZI, so that the known MZI is in a through-state, so that all optical signals are transmitted to the next MZI.

[0081] Furthermore, in one embodiment, when the optical signal input port and the optical signal output port of the known MZI are on opposite sides, the thermal phase shifter voltage of the known MZI is adjusted to the cross-point voltage of the known MZI so that the known MZI is in a cross-state, so that all optical signals are transmitted to the next MZI.

[0082] Furthermore, in one embodiment, the determination module 30 is specifically configured to:

[0083] When the optical signal input port and the optical signal output port of the target MZI are on the same side, the thermal phase shifter voltage corresponding to the maximum optical power is used as the through-point voltage of the target MZI, and the thermal phase shifter voltage corresponding to the minimum optical power is used as the cross-point voltage of the target MZI.

[0084] Furthermore, in one embodiment, the determination module 30 is specifically configured to:

[0085] When the optical signal input port and optical signal output port of the target MZI are on opposite sides, the thermal phase shifter voltage corresponding to the maximum optical power is used as the cross-point voltage of the target MZI, and the thermal phase shifter voltage corresponding to the minimum optical power is used as the through-point voltage of the target MZI.

[0086] Among them, the functional implementation of each module in the above-mentioned internal MZI key point voltage determination device corresponds to the various steps in the above-mentioned internal MZI key point voltage determination method embodiment, and their functions and implementation processes are not repeated here one by one.

[0087] In a third aspect, an embodiment of the present application provides an internal MZI key point voltage determination device, which may be a personal computer (PC), a laptop computer, a server, or other device with data processing capabilities.

[0088] Reference Figure 6 , Figure 6 Schematic diagram of the hardware structure of the internal MZI key point voltage determination device involved in the embodiment of the present application. In the embodiment of the present application, the internal MZI key point voltage determination device may include a processor, a memory, a communication interface and a communication bus.

[0089] The communication bus may be of any type and is used to interconnect the processor, memory, and communication interface.

[0090] Communication interfaces include input / output (I / O) interfaces, physical interfaces, and logical interfaces, which are used to interconnect components within the internal MZI key-point voltage determination device, as well as interfaces used to interconnect the internal MZI key-point voltage determination device with other devices (such as other computing devices or user devices). Physical interfaces can include Ethernet, fiber optic, and USB interfaces; user devices can include displays, keyboards, and other devices.

[0091] The memory can be various types of storage media, such as random access memory (RAM), read-only memory (ROM), non-volatile RAM (NVRAM), flash memory, optical storage, hard disk, programmable ROM (PROM), erasable PROM (EPROM), electrically erasable PROM (EEPROM), etc.

[0092] The processor may be a general-purpose processor that can call an internal MZI key point voltage determination program stored in a memory and execute the internal MZI key point voltage determination method provided in the embodiments of the present application. For example, the general-purpose processor may be a central processing unit (CPU). The method executed when the internal MZI key point voltage determination program is called can refer to the various embodiments of the internal MZI key point voltage determination method of the present application, and will not be repeated here.

[0093] Those skilled in the art will understand that Figure 6 The hardware structure shown in the figure does not constitute a limitation to the present application and may include more or fewer components than shown in the figure, or a combination of certain components, or a different arrangement of components.

[0094] In a fourth aspect, an embodiment of the present application also provides a computer-readable storage medium.

[0095] The computer-readable storage medium of the present application stores an internal MZI key point voltage determination program, wherein when the internal MZI key point voltage determination program is executed by a processor, the steps of the internal MZI key point voltage determination method as described above are implemented.

[0096] Among them, the method implemented when the internal MZI key point voltage determination program is executed can refer to the various embodiments of the internal MZI key point voltage determination method of the present application, and will not be repeated here.

[0097] It should be noted that the serial numbers of the above-mentioned embodiments of the present application are for description only and do not represent the advantages or disadvantages of the embodiments.

[0098] The terms "including" and "having" and any variations thereof in the specification and claims of this application and the above-mentioned drawings are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not limited to the listed steps or units, but optionally includes steps or units that are not listed, or optionally includes other steps or units inherent to these processes, methods, products or devices. The terms "first", "second" and "third" are used to distinguish different objects, etc., and do not represent a sequence, nor do they limit the "first", "second" and "third" to different types.

[0099] In the description of the embodiments of this application, the words "exemplary," "for example," or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary," "for example," or "for example" in the embodiments of this application should not be construed as being preferred or advantageous over other embodiments or designs. Rather, the use of words such as "exemplary," "for example," or "for example" is intended to present the relevant concepts in a concrete manner.

[0100] In the description of the embodiments of the present application, unless otherwise specified, “ / ” means or, for example, A / B can mean A or B; “and / or” in the text is merely a description of the association relationship of associated objects, indicating that three relationships may exist, for example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. In addition, in the description of the embodiments of the present application, “multiple” refers to two or more than two.

[0101] In some processes described in the embodiments of the present application, multiple operations or steps are included that appear in a specific order. However, it should be understood that these operations or steps may not be performed in the order in which they appear in the embodiments of the present application or may be performed in parallel. The sequence numbers of the operations are only used to distinguish between different operations, and the sequence numbers themselves do not represent any order of execution. In addition, these processes may include more or fewer operations, and these operations or steps may be performed in sequence or in parallel, and these operations or steps may be combined.

[0102] Through the description of the above implementation methods, those skilled in the art can clearly understand that the above-mentioned embodiment methods can be implemented by means of software plus the necessary general hardware platform, of course, it can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of the present application, or the part that contributes to the prior art, can be embodied in the form of a software product, which is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk) as described above, and includes a number of instructions for enabling a terminal device to execute the methods described in each embodiment of the present application.

[0103] The above are only preferred embodiments of the present application and do not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A method for determining the voltage at a key point of an internal MZI, characterized in that: The method for determining the internal MZI key point voltage includes: The thermal phase shifter voltage of the target MZI and the optical power of the output port of the optical signal transmission path are collected, wherein the thermal phase shifter voltage of the target MZI changes dynamically within a preset voltage range; the optical signal is transmitted along the optical signal transmission path, and the known MZI outputs all the optical signals to the next MZI; if there is only one MZI to be tested in the optical signal transmission path, the MZI to be tested is set as the target MZI; if there are two MZIs to be tested in the optical signal transmission path, the MZI farthest from the output port of the optical signal transmission path of the two MZIs to be tested is set as the target MZI, and the thermal phase shifter voltage of the other MZI to be tested is fixed unchanged; the MZI to be tested is located within a cascaded MZI network and has unknown cross-point voltage and through-point voltage; Obtain the optical power-voltage curve of the target MZI based on the acquisition results; The cross-point voltage and the through-point voltage of the target MZI are determined according to the optical power-voltage curve.

2. The method for determining the internal MZI key point voltage according to claim 1, wherein: The internal MZI key point voltage determination method further includes: When the optical signal input port and the optical signal output port of the known MZI are on the same side, the thermal phase shifter voltage of the known MZI is adjusted to the through point voltage of the known MZI to put the known MZI into a through state, so that all optical signals are transmitted to the next MZI.

3. The method for determining the internal MZI key point voltage according to claim 1, wherein: The internal MZI key point voltage determination method further includes: When the optical signal input port and the optical signal output port of the known MZI are on opposite sides, the thermal phase shifter voltage of the known MZI is adjusted to the cross point voltage of the known MZI to put the known MZI into a cross state so that all optical signals are transmitted to the next MZI.

4. The method for determining the internal MZI key point voltage according to claim 1, wherein: Determine the cross-point voltage and through-point voltage of the target MZI according to the optical power-voltage curve: When the optical signal input port and the optical signal output port of the target MZI are on the same side, the thermal phase shifter voltage corresponding to the maximum optical power is used as the through-point voltage of the target MZI, and the thermal phase shifter voltage corresponding to the minimum optical power is used as the cross-point voltage of the target MZI.

5. The method for determining the internal MZI key point voltage according to claim 1, wherein: Determining the cross-point voltage and the through-point voltage of the target MZI according to the optical power-voltage curve includes: When the optical signal input port and optical signal output port of the target MZI are on opposite sides, the thermal phase shifter voltage corresponding to the maximum optical power is used as the cross-point voltage of the target MZI, and the thermal phase shifter voltage corresponding to the minimum optical power is used as the through-point voltage of the target MZI.

6. An internal MZI key point voltage determination device, characterized in that: The internal MZI key point voltage determination device includes: An acquisition module is configured to acquire a thermal phase shifter voltage of a target MZI and an optical power at an output port of an optical signal transmission path, wherein the thermal phase shifter voltage of the target MZI dynamically changes within a preset voltage range; an optical signal is transmitted along the optical signal transmission path, and a known MZI outputs all optical signals to a next MZI; if only one MZI to be tested exists in the optical signal transmission path, the MZI to be tested is set as the target MZI; if two MZIs to be tested exist in the optical signal transmission path, the MZI farthest from the output port of the optical signal transmission path is set as the target MZI, and the thermal phase shifter voltage of the other MZI to be tested is fixed unchanged; the MZI to be tested is located within a cascaded MZI network and has unknown cross-point voltage and through-point voltage. The fitting module is used to obtain the optical power-voltage curve of the target MZI according to the acquisition results. A determination module is used to determine the cross-point voltage and the through-point voltage of the target MZI according to the optical power-voltage curve.

7. The internal MZI key point voltage determination device according to claim 6, characterized in that: Identify the module, specifically for: When the optical signal input port and the optical signal output port of the target MZI are on the same side, the thermal phase shifter voltage corresponding to the maximum optical power is used as the through-point voltage of the target MZI, and the thermal phase shifter voltage corresponding to the minimum optical power is used as the cross-point voltage of the target MZI.

8. The internal MZI key point voltage determination device according to claim 6, characterized in that: Identify the module, specifically for: When the optical signal input port and optical signal output port of the target MZI are on opposite sides, the thermal phase shifter voltage corresponding to the maximum optical power is used as the cross-point voltage of the target MZI, and the thermal phase shifter voltage corresponding to the minimum optical power is used as the through-point voltage of the target MZI.

9. An internal MZI key point voltage determination device, characterized in that: The internal MZI key point voltage determination device includes a processor, a memory, and an internal MZI key point voltage determination program stored in the memory and executable by the processor, wherein when the internal MZI key point voltage determination program is executed by the processor, the steps of the internal MZI key point voltage determination method according to any one of claims 1 to 5 are implemented.

10. A computer-readable storage medium, characterized in that The computer-readable storage medium stores an internal MZI key point voltage determination program, wherein when the internal MZI key point voltage determination program is executed by a processor, the steps of the internal MZI key point voltage determination method according to any one of claims 1 to 5 are implemented.

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