Semiconductor silicon wafer laser welding equipment
By using shielding gas to control the temperature in laser welding equipment, the welding quality problem caused by the rapid cooling of the tin wire was solved, and high-quality semiconductor silicon wafer welding was achieved.
Patent Information
- Application Number
- CN202510581614.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-07
- Publication Date
- 2025-09-12
AI Technical Summary
When existing laser welding equipment is used to weld semiconductor silicon wafers, the tin wire cools too quickly, which can easily cause pores or embrittlement at the welding points, affecting the welding quality and reliability.
A semiconductor silicon wafer laser welding device is used. By setting a connecting pipe and nozzle inside the laser welding head, the shielding gas is used to remove the heat, and the gas temperature is controlled by the heating wire or cooling system to prevent the tin wire from cooling too quickly. The position of the tin wire guide tube and nozzle is optimized to avoid the influence of stirring.
Effectively reduce the cooling rate of the tin wire, prevent pores or embrittlement, and improve welding quality and reliability.
Smart Images
Figure CN120619573A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of laser welding equipment, and in particular to a semiconductor silicon wafer laser welding equipment. Background Art
[0002] Laser welding is one of the important application directions of laser material processing technology. It uses the radiation of the laser beam to heat and melt the workpiece surface or welding core to perform welding operations on the workpiece. Due to the optical characteristics of the laser, it can be used for precision welding of micro and small parts. Especially in the production and processing of semiconductor silicon wafers, laser welding has become an important development trend in semiconductor silicon wafer welding processing.
[0003] However, in the process of existing laser welding on semiconductor silicon wafers, the molten tin wire attached to the pad has a small volume and a large specific surface area, which causes the high-temperature molten tin wire to radiate heat into the air at a fast rate. It is also very easy to generate pores or cause embrittlement inside the tin wire due to the rapid cooling rate, which greatly affects the welding quality of laser welding on semiconductor silicon wafers, and has poor stability and reliability.
[0004] Therefore, there is an urgent need for a laser welding device for semiconductor silicon wafers to solve the above-mentioned defects existing in the actual operation process of existing laser welding. Summary of the Invention
[0005] The present application proposes a semiconductor silicon wafer laser welding device, which has the advantage of effectively reducing the cooling rate of the tin wire, preventing it from forming pores or becoming brittle, and thus improving the welding quality of the semiconductor silicon wafer. The device is used to solve the problem that in the process of conventional laser welding of semiconductor silicon wafers, the tin wire in a molten state attached to the pad has a small volume and a large specific surface area, resulting in the high-temperature molten tin wire radiating heat into the air at a fast speed, and is very likely to form pores or become brittle inside the tin wire due to the tin wire cooling too quickly.
[0006] To achieve the above-mentioned objectives, the present application adopts the following technical solution: a semiconductor silicon wafer laser welding device, comprising a laser welding head fixedly mounted on a robotic arm, and the movement of the robotic arm can drive the laser welding head to move to perform welding operations on semiconductor silicon wafers, a tin wire conduit for conducting welding materials is fixedly mounted on one side of the exterior of the laser welding head, a nozzle for spraying shielding gas is fixedly mounted on the other side of the exterior of the laser welding head, and the nozzle is connected to the interior of the laser welding head through a connecting pipe, a connection port is provided on the top of one side of the exterior of the laser welding head, which is connected to the shielding gas pipeline, so that the shielding gas can be sprayed out from the nozzle through the interior of the laser welding head, and the shielding gas is used to remove the heat generated inside the laser welding head during the welding operation, and while dissipating heat inside the laser welding head, the temperature of the shielding gas sprayed by the nozzle is increased to reduce the cooling rate of the tin wire, and a feedback device for regulating the temperature of the shielding gas in the connecting pipe is provided on one side of the outer surface of the connecting pipe to control the temperature of the shielding gas sprayed by the nozzle within a certain range.
[0007] Furthermore, the feedback device includes an outer sleeve fixedly sleeved on the outer surface of the connecting tube, and a bracket is provided on one side of the bottom end of the outer sleeve and fixedly connected to the top of one side of the laser welding head, and an electric heating wire is provided in the cavity formed by the outer sleeve and the connecting tube. Therefore, at the initial stage, due to the small amount of heat generated inside the laser welding head, the temperature of the protective gas flowing through it does not reach the preset temperature range. The protective gas flowing through the connecting tube can be heated by the electric heating wire to rise to a specific temperature range, so as to effectively reduce the cooling rate of the tin wire in the molten state.
[0008] Furthermore, a group of guide ports connected to the inner cavity of the outer sleeve are respectively provided on both sides of the top end of the outer sleeve, and are connected to the cooling system through a pipeline, and the cavity formed by the outer sleeve and the connecting pipe is filled with coolant. When a large amount of heat is generated inside the laser welding head due to long-term operation, causing the temperature of the protective gas flowing through it to be too high, the coolant flow driven by the cooling system can be used to cool the high-temperature protective gas, and the temperature of the protective gas flowing through the connecting pipe can be controlled within a preset temperature range.
[0009] Furthermore, an inner ring groove is provided on the inner wall of the connecting pipe, and a conductive ring is fixedly installed on one side of the inner wall of the inner ring groove. A linkage sleeve made of a material with a large thermal expansion coefficient is provided on the inner ring groove, and an induction ring is fixedly installed on one side of the outer surface of the linkage sleeve, and an electrical feedback connection is formed between the conductive ring, the induction ring and the cooling system. When the temperature of the protective gas flowing through the linkage sleeve is too high, the linkage sleeve can be forced to undergo thermal expansion, thereby automatically changing the degree of mutual offset between the conductive ring and the induction ring, and regulating the triggering timing of the cooling system and the flow rate of the coolant on it, so as to control the temperature of the protective gas flowing through the connecting pipe within a preset temperature range.
[0010] Furthermore, the heating wire and the cooling system are controlled by two independent circuits, and the two independent circuits cannot be energized and triggered at the same time. Therefore, when the laser welding equipment is performing welding operations, only one of the heating wire or the cooling system can be in the energized working state.
[0011] Furthermore, the intersection of the laser welding head, the tin wire guide tube and the central axis of the nozzle converges at one point, which further improves the welding quality for the semiconductor silicon wafer.
[0012] Furthermore, according to the direction of movement of the laser welding head for welding semiconductor silicon wafers, the tin wire conduit is fixedly installed in front of the moving direction of the laser welding head, and the nozzle is fixedly installed behind the moving direction of the laser welding head, so as to effectively avoid the stirring effect of the tin wire transported by the tin wire conduit on the molten pool when the laser welding head is performing mobile welding operations.
[0013] The beneficial effects of the present invention are as follows:
[0014] The present application provides a semiconductor silicon wafer laser welding device. The setting of the connecting pipe can utilize the shielding gas to carry away the heat generated inside the laser welding head during the welding operation, thereby increasing the temperature of the shielding gas sprayed by the nozzle to reduce the cooling rate of the tin wire while performing heat dissipation treatment on the inside of the laser welding head. The temperature of the shielding gas flowing through the connecting pipe can be controlled within a preset temperature range by the triggering state of the heating wire or the cooling system, so as to effectively prevent the occurrence of pores or embrittlement at the welding point due to excessively fast cooling rate, so that the laser welding device has a higher welding quality for semiconductor silicon wafers. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only embodiments of the present invention. Those skilled in the art can also derive other drawings based on the provided drawings without inventive work.
[0016] Figure 1 It is a schematic diagram of the structure of the present invention;
[0017] Figure 2 It is a front view of the structure of the present invention;
[0018] Figure 3 Schematic diagram of the structure of the feedback device of the present invention;
[0019] Figure 4 The structure of the present invention Figure 3 A is an enlarged schematic diagram.
[0020] In the figure: 1-laser welding head, 2-tin wire guide tube, 3-nozzle, 4-connecting pipe, 5-feedback device, 6-bracket, 7-outer sleeve, 8-diversion port, 9-heating wire, 10-inner ring groove, 11-conductive ring, 12-linkage sleeve, 13-induction ring. DETAILED DESCRIPTION
[0021] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.
[0022] like Figure 1 、 Figure 2 As shown, a semiconductor silicon wafer laser welding device includes a laser welding head 1 fixedly mounted on a robotic arm, and the movement of the robotic arm can drive the laser welding head 1 to move to perform welding operations on semiconductor silicon wafers. A tin wire conduit 2 for conducting welding material is fixedly mounted on one side of the exterior of the laser welding head 1, and a nozzle 3 for spraying shielding gas is fixedly mounted on the other side of the exterior of the laser welding head 1. The nozzle 3 is connected to the interior of the laser welding head 1 through a connecting pipe 4. A connection port is provided on the top of one side of the exterior of the laser welding head 1 and is connected to the shielding gas pipeline, so that shielding gas can be sprayed out from the nozzle 3 through the interior of the laser welding head 1. The shielding gas is used to remove the heat generated inside the laser welding head 1 during the welding operation, and while dissipating heat from the interior of the laser welding head 1, the temperature of the shielding gas sprayed by the nozzle 3 is increased to reduce the cooling rate of the tin wire. A feedback device 5 for regulating the temperature of the shielding gas in the connecting pipe 4 is provided on one side of the outer surface of the connecting pipe 4 to control the temperature of the shielding gas sprayed by the nozzle 3 within a certain range.
[0023] like Figure 3As shown, in the present technical solution, the feedback device 5 includes an outer sleeve 7 fixedly sleeved on the outer surface of the connecting pipe 4, and a bracket 6 is provided on one side of the bottom end of the outer sleeve 7 and fixedly connected to the top of one side of the laser welding head 1, and a heating wire 9 is provided in the cavity formed by the outer sleeve 7 and the connecting pipe 4. Therefore, at the initial stage, due to the small amount of heat generated inside the laser welding head 1, the temperature of the protective gas flowing through it does not reach the preset temperature range. The protective gas flowing through the connecting pipe 4 can be heated by the heating wire 9 to rise to a specific temperature range, so as to effectively reduce the cooling rate of the tin wire in the molten state.
[0024] like Figure 3 As shown, in this technical solution, a group of guide ports 8 connected to the inner cavity of the outer sleeve 7 are respectively provided on both sides of the top end thereof, and are connected to the cooling system through a pipeline, and the cavity formed by the outer sleeve 7 and the connecting pipe 4 is filled with coolant. When a large amount of heat is generated inside the laser welding head 1 due to long-term operation, resulting in excessively high temperature of the shielding gas flowing therethrough, the coolant flow driven by the cooling system can be used to cool down the shielding gas with a high temperature, and the temperature of the shielding gas flowing through the connecting pipe 4 can be controlled within a preset temperature range;
[0025] Among them, the main components of the coolant, such as diols such as ethylene glycol and propylene glycol, are not corrosive in themselves and will not cause corrosion even if they are used beyond their expiration date for three years. In addition, a variety of preservatives and corrosion inhibitors are added to the coolant to effectively inhibit the corrosion of metal parts.
[0026] like Figure 4 As shown, in the present technical solution, an inner ring groove 10 is provided on the inner wall of the connecting pipe 4, and a conductive ring 11 is fixedly installed on one side of the inner wall of the inner ring groove 10, and a linkage sleeve 12 made of a material with a large thermal expansion coefficient is provided on the inner ring groove 10, and an induction ring 13 is fixedly installed on one side of the outer surface of the linkage sleeve 12, and an electrical feedback connection is formed between the conductive ring 11, the induction ring 13 and the cooling system. When the temperature of the shielding gas flowing through the linkage sleeve 12 is too high, the linkage sleeve 12 can be forced to undergo thermal expansion, thereby automatically changing the degree of mutual offset between the conductive ring 11 and the induction ring 13, and regulating the triggering timing of the cooling system and the flow rate of the coolant thereon, so as to control the temperature of the shielding gas flowing through the connecting pipe 4 within a preset temperature range;
[0027] The linkage sleeve 12 is arranged on the inner wall of the connecting pipe 4 . Therefore, when the linkage sleeve 12 is thermally expanded, it is squeezed by the connecting pipe 4 and deformed toward the flow direction of the connecting pipe 4 .
[0028] In this technical solution, the heating wire 9 and the cooling system are controlled by two independent circuits, and the two independent circuits cannot be energized and triggered at the same time. Therefore, when the laser welding equipment performs welding operations, only one of the heating wire 9 or the cooling system can be in the energized working state.
[0029] like Figure 2 As shown, in this technical solution, the intersection of the laser welding head 1, the tin wire guide tube 2 and the central axis of the nozzle 3 converges at one point (ie, the welding point), further improving the welding quality for semiconductor silicon wafers.
[0030] like Figure 2 As shown, in the present technical solution, according to the direction of movement of the laser welding head 1 for welding semiconductor silicon wafers, the tin wire conduit tube 2 is fixedly installed in front of the moving direction of the laser welding head 1, and the nozzle 3 is fixedly installed in the rear relative to the moving direction of the laser welding head 1, so as to effectively avoid the stirring effect of the tin wire transported by the tin wire conduit tube 2 on the molten pool when the laser welding head 1 is performing mobile welding operations.
[0031] The above description of the disclosed embodiments is intended to enable one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not limited to the embodiments shown herein but is intended to conform to the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A semiconductor silicon wafer laser welding device, comprising a laser welding head (1), wherein a tin wire guide tube (2) is fixedly mounted on one side of the exterior of the laser welding head (1), and characterized in that: A nozzle (3) is fixedly installed on the other side of the outside of the laser welding head (1), and the nozzle (3) is connected to the inside of the laser welding head (1) through a connecting pipe (4). A connection port is provided on the top of one side of the outside of the laser welding head (1) and is connected to the protective gas pipeline. A feedback device (5) for regulating the temperature of the protective gas in the connecting pipe (4) is provided on one side of the outer surface of the connecting pipe (4). The feedback device (5) includes an outer sleeve (7) fixedly sleeved on the outer surface of the connecting pipe (4), and a bracket (6) is provided on one side of the bottom end of the outer sleeve (7) and is fixedly connected to the top of one side of the laser welding head (1). A heating wire (9) is provided in the cavity formed by the outer sleeve (7) and the connecting pipe (4). A group of guide ports (8) connected to its inner cavity are respectively provided on both sides of the top of the outer sleeve (7), and are connected to the cooling system through a pipeline, and the cavity formed by the outer sleeve (7) and the connecting pipe (4) is filled with cooling liquid.
2. The semiconductor silicon wafer laser welding equipment according to claim 1, characterized in that: The inner wall of the connecting pipe (4) is provided with an inner ring groove (10), and a conductive ring (11) is fixedly installed on one side of the inner wall of the inner ring groove (10). A linkage sleeve (12) is provided on the inner ring groove (10), and an induction ring (13) is fixedly installed on one side of the outer surface of the linkage sleeve (12), and an electrical feedback connection is formed between the conductive ring (11), the induction ring (13) and the cooling system.
3. The semiconductor silicon wafer laser welding equipment according to claim 2, characterized in that: The heating wire (9) and the cooling system are controlled by two independent circuits, and the two independent circuits cannot be energized and triggered at the same time.
4. The semiconductor silicon wafer laser welding equipment according to claim 1, characterized in that: The intersection of the central axes of the laser welding head (1), the tin wire guide tube (2) and the nozzle (3) converges at one point.
5. The semiconductor silicon wafer laser welding equipment according to claim 1, characterized in that: According to the direction of movement of the laser welding head (1) for welding semiconductor silicon wafers, the tin wire guide tube (2) is fixedly installed in front of the moving direction of the laser welding head (1), while the nozzle (3) is fixedly installed in the rear of the moving direction of the laser welding head (1).