An ultra-high vacuum evaporation device convenient for processing

Abstract

The application provides an ultra-high vacuum evaporation device which is convenient to process, a first magnetic push rod conveying device, a second magnetic push rod conveying device and a preparation chamber, a cleaning chamber, an evaporation chamber and an oxidation chamber which are sequentially connected are arranged, the evaporation chamber comprises an evaporation cavity, an evaporation assembly, an evaporation detection assembly, a second turnover driving device and a third grabbing device, through the above-mentioned mechanism, the evaporation surface is absolutely perpendicular to the evaporation source, the evaporation detection assembly is combined to realize the extreme precision of the film layer uniformity and thickness; meanwhile, the evaporation assembly is designed as a movable multi-crucible evaporation source, the quick and accurate switching and alignment of different evaporation materials are realized, the efficient sequential evaporation or co-evaporation is supported, the process flexibility and the production capacity are significantly improved; each shading plate and crucible cover plate effectively prevent the evaporation material from polluting the chamber, key components such as a probe, an observation window and subsequent wafers, the maintenance demand is greatly reduced, and the long-term stable operation of the equipment and the film layer purity are ensured.

Description

Technical Field

[0001] This invention relates to the field of vacuum evaporation deposition technology, and more specifically, to an ultra-high vacuum evaporation deposition apparatus that is easy to process. Background Technology

[0002] Vacuum evaporation technology is widely used in semiconductors, optical devices, and other fields. It requires the evaporation and deposition of metals or compounds onto a substrate surface under ultra-high vacuum conditions. Traditional evaporation equipment suffers from the following bottlenecks:

[0003] (1) Low efficiency of multi-material evaporation: Switching the evaporation source requires breaking the vacuum and replacing the crucible, which is time-consuming and has a high risk of contamination, affecting the stability of mass production.

[0004] (2) Weak pollution control: Evaporation materials are prone to splashing onto the inner wall of the cavity, the observation window and the sensor, which leads to an increase in equipment failure rate and maintenance frequency.

[0005] To overcome the above limitations, there is an urgent need to develop an ultra-high vacuum evaporation device that integrates high-precision positioning, rapid switching between multiple sources, enhanced pollution prevention, and real-time monitoring, making it easy to process. Summary of the Invention

[0006] In view of this, in order to solve the above problems, the present invention proposes an ultra-high vacuum evaporation device that integrates high-precision positioning, multi-source rapid switching, enhanced anti-pollution, and real-time monitoring, making it easy to process.

[0007] An easy-to-process ultra-high vacuum evaporation deposition apparatus includes a first magnetic pusher conveying device 1, a second magnetic pusher conveying device 2, and a preparation chamber 3, a cleaning chamber 4, a deposition chamber 5, and an oxidation chamber 6 connected in sequence. The first magnetic pusher conveying device 1 is located at the input end of the preparation chamber 3, and the second magnetic pusher conveying device 2 is located at the output end of the oxidation chamber 6. The first magnetic pusher conveying device 1 sequentially conveys wafers to the preparation chamber 3 and the cleaning chamber 4 for processing. The second magnetic pusher conveying device 2 receives wafers in the cleaning chamber 4 and sequentially conveys them to the deposition chamber 5 and the oxidation chamber 6 for processing. The deposition chamber 5 includes a deposition chamber body 51, an evaporation assembly 52, an evaporation detection assembly 53, and a second flipping drive device 54. The third material gripping device 55 is connected to the output end of the cleaning and processing chamber 41 and the input end of the vapor deposition chamber 51. The bottom of the vapor deposition chamber 51 is provided with an evaporation component 52, and the inner wall of the vapor deposition chamber 51 is provided with an evaporation detection component 53. The evaporation detection component 53 is used to monitor the evaporation data of the evaporation component 52. A second flipping drive device 54 is provided on one side of the vapor deposition chamber 51, and the drive end of the second flipping drive device 54 is provided with the third material gripping device 55. When the second magnetic push rod conveying device 2 receives the wafer in the cleaning chamber 4, it conveys the wafer to the vapor deposition chamber 51. The third material gripping device 55 grips the material, and after gripping, the vapor deposition chamber 51 below performs vacuum coating on the material. At the same time, the evaporation detection component 53 monitors the evaporation data in real time to improve the film thickness accuracy.

[0008] In some embodiments, the third material gripping device 55 includes a material gripping mounting base 71, a material gripping drive device 72, a material gripping frame 73, and a drive clamping plate 74. The second flipping drive device 54 has a material gripping mounting base 71 at its drive end. The material gripping drive device 72 is located above the material gripping mounting base 71. The material gripping frame 73 is fixedly located below the material gripping drive device 72. The drive clamping plate 74 is located below the material gripping frame 73. The drive clamping plate 74 and the material gripping frame 73 form a material gripping chamber. The material gripping chamber is used to grip the first support platform 15 carrying the material. The drive plate is connected to the drive end of the material gripping drive device 72. The material gripping drive device 72 drives the drive clamping plate 74 to perform vertical movement and circular rotation along the material gripping frame 73. Firstly, the design of the gripping chamber formed by the drive clamp 74 and the gripping frame 73 provides a mechanical and reliable clamping method that can stably accommodate and constrain the wafer carrier, preventing it from falling off during gripping, flipping, and rotation. Secondly, the gripping drive device 72 drives the drive clamp 74 to move vertically and rotate circumferentially along the gripping frame 73, giving the gripping device lifting and rotating functions. Lifting is used to adjust the height when intersecting with the push rod, and rotating is used to adjust the carrier angle or may be used for fine-tuning at the workstation.

[0009] Furthermore, the circular rotation motion of the gripping drive device 72 includes a precise positioning mode; after the third gripping device 55 grips the wafer carrier, the gripping drive device 72 performs continuous rotation from 0° to 360° and provides real-time position feedback through a rotation angle sensor; multiple positioning marks are preset on the inner wall of the evaporation chamber 51, and when the third gripping device 55 rotates to the target mark, the drive clamp 74 locks the angle, so that the evaporation surface of the wafer carrier is precisely perpendicular to the evaporation source of the evaporation assembly 52.

[0010] Furthermore, the drive clamp 74 has a crescent-shaped structure, with both ends serving as guides and facilitating transportation. Firstly, the crescent shape provides excellent guidance when the wafer carrier enters the gripping chamber, facilitating smooth sliding and reducing the risk of collisions and jamming. Secondly, the crescent shape avoids sharp edges forming at the opening of the gripping chamber, reducing the possibility of accidental interference with the carrier or other components during movement or gripping. Thirdly, the crescent design reduces weight and optimizes spatial layout while maintaining gripping area and strength.

[0011] In some embodiments, the evaporation assembly 52 includes a sliding baffle device 521, an evaporation frame 522, a first anti-fouling plate 523, an evaporation crucible assembly 524, and a crucible driving device 525. The evaporation frame 522 is located at the bottom of the vapor deposition chamber 51, with the first anti-fouling plate 523 above it. The first anti-fouling plate 523 has a vapor deposition evaporation hole 5232 in the middle. A slide rail is located below the evaporation frame 522, and the evaporation crucible assembly 524 is located between the first anti-fouling plate 523 and the slide rail. The crucible driving device 525 is located at one end of the slide rail, and its driving end is connected to the evaporation crucible assembly 524. The first anti-fouling plate 523 is located above the evaporation frame 522. The first anti-fouling plate 523 mainly prevents the evaporation material from splashing and depositing on the upper wall of the vapor deposition chamber 5 and other non-target areas, keeping the chamber clean and extending the maintenance cycle.

[0012] Furthermore, the evaporation crucible assembly 524 includes a slider 5241 with multiple crucible cavities spaced apart on its upper surface. A crucible cover plate 526 is positioned above the slider 5241. The crucible cover plate 526 has a single evaporation source port 5261, which corresponds to the vapor deposition evaporation hole 5232 of the first anti-stick plate 523. The design of the evaporation crucible assembly 524, including the slider 5241 with multiple crucible cavities spaced apart, each crucible cavity corresponding to an evaporation hole, and the crucible driving device 525 connected to the evaporation crucible assembly 524, allows for convenient, rapid, and precise alignment of different evaporation sources (placed in different crucible cavities) with the vapor deposition evaporation hole 5232 by moving the slider 5241 along a slide rail. This enables sequential vapor deposition or co-evaporation of multiple materials, improving process flexibility.

[0013] Furthermore, a sliding shield device 521 is located on the side of the evaporation chamber 5, with its lower part corresponding to the upper part of the evaporation hole 5232 of the first anti-fouling plate 523. This serves to shield the evaporation source during non-processing periods or when changing wafers. The lower part of the sliding shield device 521 corresponds to the upper part of the evaporation hole of the first anti-fouling plate 523, effectively preventing the evaporation source material from continuing to volatilize and contaminate the chamber or subsequent wafers during non-evaporation periods (such as wafer changes or equipment standby). This protects the evaporation source itself and improves system stability and film purity.

[0014] In some embodiments, the first anti-sticking plate 523 is further provided with two detection evaporation holes 5231 at intervals on its side. The evaporation detection component 53 includes a crystal oscillator probe 531, a second anti-sticking plate 532, and a third anti-sticking plate 533. A crystal oscillator probe 531 is provided on one side of the inner wall of the evaporation chamber 51. The crystal oscillator probe 531 is aligned with one detection evaporation hole 5231 for in-situ monitoring of evaporation data and to avoid impact from the main evaporation flow.

[0015] In some embodiments, the vapor deposition chamber 5 is further provided with an observation assembly, which includes an observation window 56 and a reflector 57. A second anti-fouling plate 532 is provided above the side of the crystal oscillator probe 531, and a reflector 57 is provided on the other side of the inner wall of the vapor deposition chamber 51. A third anti-fouling plate 533 is provided above the side of the reflector 57. The observation window 56 is provided on the surface of the vapor deposition chamber 5 corresponding to the reflector 57. The reflector 57 reflects the evaporation state to the observation window 56, and the third anti-fouling plate 533 prevents the evaporation material from contaminating the observation window 56. Firstly, the reflector 57 reflects the view of the evaporation area (especially near the main evaporation hole) onto the observation window 56, allowing operators to safely, conveniently, and intuitively observe the real-time status of the evaporation process outside the chamber without directly facing the high-temperature evaporation source and strong light. Secondly, a second anti-fouling plate 532 is provided above the side of the crystal oscillator probe 531, and a third anti-fouling plate 533 is provided above the side of the reflector 57. These anti-fouling plates effectively prevent the evaporation material from splashing towards the observation window 56 and the reflector 57, significantly reducing the deposition of evaporation material on the observation window 56 and the reflector 57, maintaining the clarity of observation, and extending the cleaning cycle of the observation window 56 and the reflector 57. Thirdly, it facilitates the operator's monitoring of whether the evaporation source is working properly (such as whether it is arcing or in a melting state) and whether the plasma is stable, which helps to detect abnormalities in a timely manner.

[0016] The beneficial effects of this invention are as follows: This invention proposes an easy-to-process ultra-high vacuum evaporation deposition apparatus, including a first magnetic push rod conveying device 1, a second magnetic push rod conveying device 2, and a preparation chamber 3, a cleaning chamber 4, a deposition chamber 5, and an oxidation chamber 6 connected in sequence. The deposition chamber 5 includes a deposition chamber 51, an evaporation assembly 52, an evaporation detection assembly 53, a second flipping drive device 54, and a third material gripping device 55. The above mechanisms ensure that the deposition surface is absolutely perpendicular to the evaporation source. Combined with the evaporation detection assembly 53, it achieves the ultimate precision in film uniformity and thickness. At the same time, the evaporation assembly 52 is designed as a movable multi-crucible evaporation source, which enables rapid and accurate switching and alignment of different evaporation materials, supports efficient sequential deposition or co-deposition, and significantly improves process flexibility and production capacity. Each anti-contamination plate and crucible cover plate 526 effectively prevents the evaporation material from contaminating the chamber, key components such as probes, observation windows, and subsequent wafers, greatly reducing maintenance requirements and ensuring long-term stable operation of the equipment and film purity. Attached Figure Description

[0017] Figure 1 This is an overall structural diagram of the ultra-high vacuum evaporation device of the present invention, which is easy to process.

[0018] Figure 2 This is a schematic diagram of the vapor deposition chamber of the ultra-high vacuum vapor deposition apparatus of the present invention, which is easy to process.

[0019] Figure 3 This is a schematic diagram of the evaporation component of the ultra-high vacuum evaporation device of the present invention, which is easy to process.

[0020] Figure 4 This is a schematic diagram of the evaporation component of the ultra-high vacuum evaporation device of the present invention, which is easy to process.

[0021] Figure 5 This is a schematic diagram of the gripping state of the third gripping device of the ultra-high vacuum evaporation apparatus of the present invention, which is easy to process.

[0022] Figure 6 This is a schematic diagram of the released state of the third material gripping device of the ultra-high vacuum evaporation apparatus of the present invention, which is easy to process.

[0023] Explanation of main component symbols

[0024] First magnetic push rod conveying device 1, second magnetic push rod conveying device 2, preparation chamber 3, cleaning chamber 4, vapor deposition chamber 5, vapor deposition chamber 51, evaporation assembly 52, sliding baffle device 521, evaporation rack 522, first anti-sticking plate 523, detection evaporation hole 5231, vapor deposition evaporation hole 5232, evaporation crucible group 524, slider 5241, crucible driving device 525, crucible cover plate 526, evaporation source port 5261, evaporation detection assembly 53, crystal oscillator probe 531, second anti-sticking plate 532, third anti-sticking plate 533, second flipping drive device 54, third material gripping device 55, observation window 56, reflector 57, oxidation chamber 6, material gripping mounting base 71, material gripping drive device 72, material gripping rack 73, drive clamp 74.

[0025] The following detailed description, in conjunction with the accompanying drawings, will further illustrate the present invention. Detailed Implementation Example 1:

[0026] like Figure 1 The diagram shown is an overall structural diagram of the ultra-high vacuum evaporation deposition apparatus of the present invention, which is easy to process. An ultra-high vacuum evaporation deposition apparatus that is easy to process includes a first magnetic pusher conveying device 1, a second magnetic pusher conveying device 2, and a preparation chamber 3, a cleaning chamber 4, a deposition chamber 5, and an oxidation chamber 6 connected in sequence. The first magnetic pusher conveying device 1 is located at the input end of the preparation chamber 3, and the second magnetic pusher conveying device 2 is located at the output end of the oxidation chamber 6. The first magnetic pusher conveying device 1 sequentially conveys the wafer to the preparation chamber 3 and the cleaning chamber 4 for processing. The second magnetic pusher conveying device 2 receives the wafer in the cleaning chamber 4 and sequentially conveys it to the deposition chamber 5 and the oxidation chamber 6 for processing. Figure 2 The diagram shows the structure of the vapor deposition chamber of the ultra-high vacuum vapor deposition apparatus of the present invention, which is easy to process. The vapor deposition chamber 5 includes a vapor deposition chamber 51, an evaporation component 52, an evaporation detection component 53, a second flipping drive device 54, and a third material gripping device 55. The output end of the cleaning and processing chamber 41 is connected to the input end of the vapor deposition chamber 51. The bottom of the vapor deposition chamber 51 is provided with the evaporation component 52, and the inner wall of the vapor deposition chamber 51 is provided with the evaporation detection component 53. The evaporation detection component 53 is used to monitor the evaporation data of the evaporation component 52. The second flipping drive device 54 is provided on one side of the vapor deposition chamber 51, and the drive end of the second flipping drive device 54 is provided with the third material gripping device 55. When the second magnetic push rod conveying device 2 receives the wafer in the cleaning chamber 4, it conveys the wafer to the vapor deposition chamber 51. The third material gripping device 55 grips the material, and after gripping, the vapor deposition chamber 51 below performs vacuum deposition on the material. At the same time, the evaporation detection component 53 monitors the evaporation data in real time to improve the film thickness accuracy.

[0027] like Figure 5The diagram shown is a structural schematic of the gripping state of the third gripping device in the ultra-high vacuum evaporation deposition apparatus of the present invention, which is easy to process. Figure 6 The diagram shows the structure of the third gripping device of the ultra-high vacuum evaporation apparatus of the present invention in its released state. The third gripping device 55 includes a gripping mounting base 71, a gripping driving device 72, a gripping frame 73, and a driving clamping plate 74. The second flipping driving device 54 has a gripping mounting base 71 at its driving end. The gripping driving device 72 is located above the gripping mounting base 71. The gripping frame 73 is fixedly located below the gripping driving device 72. The driving clamping plate 74 is located below the gripping frame 73. The driving clamping plate 74 and the gripping frame 73 form a gripping chamber. The gripping chamber is used to grip the first support platform 15 carrying the material. The driving plate is connected to the driving end of the gripping driving device 72. The gripping driving device 72 drives the driving clamping plate 74 to perform vertical movement and circular rotation along the gripping frame 73. Firstly, the design of the gripping chamber formed by the drive clamp 74 and the gripping frame 73 provides a mechanical and reliable clamping method that can stably accommodate and constrain the wafer carrier, preventing it from falling off during gripping, flipping, and rotation. Secondly, the gripping drive device 72 drives the drive clamp 74 to move vertically and rotate circumferentially along the gripping frame 73, giving the gripping device lifting and rotating functions. Lifting is used to adjust the height when intersecting with the push rod, and rotating is used to adjust the carrier angle or may be used for fine-tuning at the workstation.

[0028] The circular rotation of the material gripping drive device 72 includes a precise positioning mode; after the third material gripping device 55 grips the wafer carrier, the material gripping drive device 72 performs continuous rotation from 0° to 360° and provides real-time position feedback through a rotation angle sensor; multiple positioning marks are preset on the inner wall of the evaporation chamber 51, and when the third material gripping device 55 rotates to the target mark, the drive clamp 74 locks the angle, so that the evaporation surface of the wafer carrier is precisely perpendicular to the evaporation source of the evaporation component 52.

[0029] The drive clamp 74 has a crescent-shaped structure, with both ends serving as guides and facilitating transportation. Firstly, the crescent shape provides excellent guidance when the wafer carrier enters the gripping chamber, ensuring smooth sliding and reducing the risk of collisions and jamming. Secondly, the crescent shape avoids sharp edges forming at the opening of the gripping chamber, reducing the possibility of accidental interference with the carrier or other components during movement or gripping. Thirdly, the crescent design reduces weight and optimizes spatial layout while maintaining gripping area and strength.

[0030] like Figures 3-4The diagram shows the structure of the evaporation assembly of the ultra-high vacuum evaporation deposition apparatus of the present invention, which is easy to process. The evaporation assembly 52 includes a sliding baffle device 521, an evaporation frame 522, a first anti-fouling plate 523, an evaporation crucible assembly 524, and a crucible driving device 525. The evaporation frame 522 is located at the bottom of the evaporation chamber 51, with the first anti-fouling plate 523 positioned above it. An evaporation hole 5232 is located in the middle of the first anti-fouling plate 523. A slide rail is located below the evaporation frame 522, and the evaporation crucible assembly 524 is positioned between the first anti-fouling plate 523 and the slide rail. The crucible driving device 525 is located at one end of the slide rail, and its driving end is connected to the evaporation crucible assembly 524. The first anti-fouling plate 523 is located above the evaporation frame 522. The first anti-fouling plate 523 mainly prevents evaporation material from splashing and depositing on the upper wall of the evaporation chamber 5 and other non-target areas, keeping the chamber clean and extending the maintenance cycle.

[0031] The evaporation crucible assembly 524 includes a slider 5241 with multiple crucible cavities spaced apart on its upper surface. A crucible cover plate 526 is positioned above the slider 5241. The crucible cover plate 526 has a single evaporation source port 5261, which corresponds to the evaporation hole 5232 of the first anti-stick plate 523. The design of the evaporation crucible assembly 524, including the slider 5241 with multiple crucible cavities spaced apart, each crucible cavity corresponding to an evaporation hole, and the crucible driving device 525 connected to the evaporation crucible assembly 524, allows for convenient, rapid, and precise alignment of different evaporation sources (placed in different crucible cavities) with the evaporation hole 5232 by moving the slider 5241 along a slide rail. This enables sequential or co-evaporation of multiple materials, improving process flexibility.

[0032] A sliding shield device 521 is located on the side of the evaporation chamber 5, with its lower part corresponding to the upper part of the evaporation hole 5232 of the first anti-fouling plate 523. This serves to shield the evaporation source during non-processing periods or when changing wafers. Specifically, the lower part of the sliding shield device 521 corresponds to the upper part of the evaporation hole of the first anti-fouling plate 523, effectively preventing the evaporation source material from continuing to volatilize and contaminate the chamber or subsequent wafers during non-evaporation periods (such as wafer changes or equipment standby). This protects the evaporation source itself and improves system stability and film purity.

[0033] The first anti-stick plate 523 is also provided with two detection evaporation holes 5231 at intervals on its side. The evaporation detection component 53 includes a crystal oscillator probe 531, a second anti-stick plate 532, and a third anti-stick plate 533. A crystal oscillator probe 531 is provided on one side of the inner wall of the evaporation chamber 51. The crystal oscillator probe 531 is aligned with a detection evaporation hole 5231 to monitor evaporation data in situ and avoid impact from the main evaporation flow.

[0034] The vapor deposition chamber 5 is also equipped with an observation assembly, which includes an observation window 56 and a reflector 57. A second anti-sticking plate 532 is provided above the side of the crystal oscillator probe 531. A reflector 57 is provided on the other side of the inner wall of the vapor deposition chamber 51. A third anti-sticking plate 533 is provided above the side of the reflector 57. The observation window 56 is provided on the surface of the vapor deposition chamber 5 corresponding to the reflector 57. The reflector 57 reflects the evaporation state to the observation window 56, and the third anti-sticking plate 533 prevents the evaporation material from contaminating the observation window 56. Firstly, the reflector 57 reflects the view of the evaporation area (especially near the main evaporation hole) onto the observation window 56, allowing operators to safely, conveniently, and intuitively observe the real-time status of the evaporation process outside the chamber without directly facing the high-temperature evaporation source and strong light. Secondly, a second anti-fouling plate 532 is provided above the side of the crystal oscillator probe 531, and a third anti-fouling plate 533 is provided above the side of the reflector 57. These anti-fouling plates effectively prevent the evaporation material from splashing towards the observation window 56 and the reflector 57, significantly reducing the deposition of evaporation material on the observation window 56 and the reflector 57, maintaining the clarity of observation, and extending the cleaning cycle of the observation window 56 and the reflector 57. Thirdly, it facilitates the operator's monitoring of whether the evaporation source is working properly (such as whether it is arcing or in a melting state) and whether the plasma is stable, which helps to detect abnormalities in a timely manner.

[0035] Working principle of the invention:

[0036] (1) Wafer input and pretreatment: First, the first magnetic pusher conveyor 1 sends the wafer into the preparation chamber 3 for preliminary treatment, such as vacuuming and preheating. Second, the pusher device pushes the wafer from the preparation chamber 3 into the cleaning chamber 4 for surface cleaning.

[0037] (2) Wafer transfer and entry into the vapor deposition chamber: First, after the processing in the cleaning chamber 4 is completed, the second magnetic push rod conveying device 2 receives the wafer at the output end of the cleaning chamber 4. Second, the second magnetic push rod conveying device 2 conveys the received wafer to the input end of the vapor deposition chamber 51 of the vapor deposition chamber 5.

[0038] (3) Wafer gripping and precise positioning in the vapor deposition chamber: First, the second flipping drive device 54 on the side of the vapor deposition chamber 51 drives the third gripping device 55 to move to a suitable position. Second, the gripping drive device 72 of the third gripping device 55 drives the crescent-shaped drive clamp 74, so that it and the gripping chamber formed below the gripping frame 73 firmly hold the first carrier platform 15 carrying the wafer. Then, the gripping drive device 72 executes the precise positioning mode: drives the drive clamp 74 and the wafer carrier to rotate continuously from 0° to 360°. Next, during the rotation, the built-in rotation angle sensor provides real-time feedback of position information. Finally, when the target positioning mark is preset on the inner wall of the vapor deposition chamber 51, the drive clamp 74 locks the angle to ensure that the vapor deposition surface of the wafer is precisely perpendicular to the evaporation source of the evaporation assembly 52 below.

[0039] (4) Evaporation source preparation and vapor deposition process: First, according to the required vapor deposition material, the crucible driving device 525 drives the slider 5241 of the evaporation crucible group 524 to move on the slide rail, precisely aligning the selected crucible cavity containing the evaporation material with the vapor deposition evaporation hole 5232 on the first anti-stick plate 523 (at this time, the single evaporation source port 5261 of the crucible cover plate 526 also corresponds to this hole). Second, the sliding cover plate device 521 located on the side of the vapor deposition chamber 5 moves away, exposing the vapor deposition evaporation hole 5232. Then, the evaporation source heats the material in the selected crucible cavity, causing it to evaporate or sublimate. Next, the material vapor generated by evaporation is sprayed upward through the vapor deposition evaporation hole 5232 and deposited on the precisely vertically positioned wafer vapor deposition surface to form a thin film.

[0040] (5) Real-time monitoring and process observation: First, the crystal oscillator probe 531 of the evaporation detection component 53 monitors the evaporation rate and deposition film thickness in situ in real time through the detection evaporation hole 5231 on the side of the first anti-fouling plate 523, and feeds the data back to the control system. Second, the control system precisely adjusts the evaporation process based on the monitoring data, such as adjusting the evaporation power and time, to ensure film thickness accuracy. At the same time, the operator can safely and clearly monitor the evaporation process status in real time through the observation window 56 on the evaporation chamber 5, with the help of the reflection of the evaporation area by the reflector 57. The second anti-fouling plate 532 and the third anti-fouling plate 533 effectively protect the observation window 56 and the reflector 57 from contamination.

[0041] (6) Chamber protection mechanism: First, the first anti-fouling plate 523 blocks most of the upward splashing evaporation material, protecting the upper wall of the evaporation chamber 5. Second, during non-evaporation periods, such as when changing wafers or when the equipment is in standby mode, the sliding shielding device 521 quickly moves to shield the area above the evaporation holes 5232, preventing contamination. Then, the crucible cover plate 526 is designed to expose only the evaporation source port 5261 corresponding to the crucible cavity in use, reducing the volatilization of other materials.

[0042] (7) Wafer Output and Subsequent Processing: First, after the vapor deposition process is completed, the third material handling device 55 releases the first support platform 15 carrying the coated wafer. Second, the second magnetic pusher conveyor 2 receives the wafer. Then, the second magnetic pusher conveyor 2 transports the wafer to the oxidation chamber 6 for subsequent processing, such as oxidation or annealing. Finally, the processed wafer is taken out from the output end of the oxidation chamber 6.

[0043] The beneficial effects of this invention are as follows: This invention proposes an easy-to-process ultra-high vacuum evaporation deposition apparatus, including a first magnetic push rod conveying device 1, a second magnetic push rod conveying device 2, and a preparation chamber 3, a cleaning chamber 4, a deposition chamber 5, and an oxidation chamber 6 connected in sequence. The deposition chamber 5 includes a deposition chamber 51, an evaporation assembly 52, an evaporation detection assembly 53, a second flipping drive device 54, and a third material gripping device 55. The above mechanisms ensure that the deposition surface is absolutely perpendicular to the evaporation source. Combined with the evaporation detection assembly 53, it achieves the ultimate precision in film uniformity and thickness. At the same time, the evaporation assembly 52 is designed as a movable multi-crucible evaporation source, which enables rapid and accurate switching and alignment of different evaporation materials, supports efficient sequential deposition or co-deposition, and significantly improves process flexibility and production capacity. Each anti-contamination plate and crucible cover plate 526 effectively prevents the evaporation material from contaminating the chamber, key components such as probes, observation windows, and subsequent wafers, greatly reducing maintenance requirements and ensuring long-term stable operation of the equipment and film purity.

[0044] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements all fall within the scope of protection of the present invention. Therefore, the scope of protection of this patent should be determined by the appended claims.

Claims

1. An easy-to-process ultra-high vacuum evaporation deposition apparatus, comprising a first magnetic push rod conveying device (1), a second magnetic push rod conveying device (2), and a preparation chamber (3), a cleaning chamber (4), an evaporation deposition chamber (5), and an oxidation chamber (6) connected in sequence. The first magnetic push rod conveying device (1) is provided at the input end of the preparation chamber (3), and the second magnetic push rod conveying device (2) is provided at the output end of the oxidation chamber (6). The first magnetic push rod conveying device (1) sequentially conveys the wafer to the preparation chamber (3) and the cleaning chamber (4) for processing. The second magnetic push rod conveying device (2) receives the wafer in the cleaning chamber (4) and sequentially conveys it to the evaporation deposition chamber (5) and the oxidation chamber (6) for processing. The evaporation deposition chamber (5) includes evaporation deposition chambers. The cavity (51), evaporation assembly (52), evaporation detection assembly (53), second flip drive device (54), and third gripping device (55) are connected. The output end of the cleaning processing cavity (41) is connected to the input end of the vapor deposition cavity (51). The bottom of the vapor deposition cavity (51) is provided with an evaporation assembly (52). The inner wall of the vapor deposition cavity (51) is provided with an evaporation detection assembly (53). The evaporation detection assembly (53) is used to monitor the evaporation data of the evaporation assembly (52). The vapor deposition cavity (51) is provided with a second flip drive device (54) on one side. The drive end of the second flip drive device (54) is provided with a third gripping device (55). When the second magnetic push rod conveying device (2) receives the wafer in the cleaning chamber (4), it conveys the wafer to the vapor deposition cavity (51). The three-grip device (55) grips the material, and the vapor deposition chamber (51) below it performs vacuum deposition on the material. At the same time, the evaporation detection component (53) monitors the evaporation data in real time to improve the film thickness accuracy. The third gripping device (55) includes a gripping mounting base (71), a gripping drive device (72), a gripping frame (73), and a drive clamping plate (74). The second flipping drive device (54) has a gripping mounting base (71) at its drive end. The gripping drive device (72) is located above the gripping mounting base (71). The gripping frame (73) is fixedly located below the gripping drive device (72). The drive clamping plate (74) is located below the gripping frame (73). The drive clamping plate (74) and the gripping frame (73) form a gripping chamber. The gripping chamber is used to clamp the material. The first support platform (15) that carries the material is taken, and the drive clamp is connected to the drive end of the gripping drive device (72). The gripping drive device (72) drives the drive clamp (74) to perform vertical movement and circumferential rotation along the gripping frame (73). The circumferential rotation of the gripping drive device (72) includes a precise positioning mode. After the third gripping device (55) grips the wafer carrier, the gripping drive device (72) performs continuous rotation from 0° to 360° and provides real-time feedback of the position through the rotation angle sensor. The inner wall of the evaporation cavity (51) is pre-set with multiple positioning marks. When the third gripping device (55) rotates to the target mark, the drive clamp (74) locks the angle so that the evaporation surface of the wafer carrier is precisely perpendicular to the evaporation source of the evaporation assembly (52).

2. The easy-to-process ultra-high vacuum evaporation deposition apparatus as described in claim 1, characterized in that: The drive clamp (74) has a crescent-shaped structure, and the two ends of the crescent-shaped structure serve as guides and facilitate transportation.

3. The easy-to-process ultra-high vacuum evaporation deposition apparatus as described in claim 1, characterized in that: The evaporation assembly (52) includes a sliding baffle device (521), an evaporation frame (522), a first anti-stick plate (523), an evaporation crucible group (524), and a crucible driving device (525). The evaporation frame (522) is located at the bottom of the vapor deposition chamber (51), and the first anti-stick plate (523) is located above it. The first anti-stick plate (523) has a vapor deposition evaporation hole (5232) in the middle. A slide rail is located below the evaporation frame (522), and an evaporation crucible group (524) is located between the first anti-stick plate (523) and the slide rail. A crucible driving device (525) is located at one end of the slide rail, and its driving end is connected to the evaporation crucible group (524).

4. The easy-to-process ultra-high vacuum evaporation deposition apparatus as described in claim 3, characterized in that: The evaporation crucible assembly (524) includes a slider (5241), with multiple crucible cavities spaced apart on the upper surface of the slider (5241), and a crucible cover plate (526) above the slider (5241); the crucible cover plate (526) has a single evaporation source port (5261), which corresponds to the vapor deposition evaporation hole (5232) of the first anti-stick plate (523).

5. The easy-to-process ultra-high vacuum evaporation deposition apparatus as described in claim 3, characterized in that: The sliding shield device (521) is located on the side of the evaporation chamber (5), and its lower part corresponds to the upper part of the evaporation hole (5232) of the first anti-stick plate (523), which serves to shield the evaporation source during non-processing periods or when changing wafers.

6. The easy-to-process ultra-high vacuum evaporation deposition apparatus as described in claim 3, characterized in that: The first anti-stick plate (523) is also provided with two detection evaporation holes (5231) at intervals on its side. The evaporation detection component (53) includes a crystal oscillator probe (531), a second anti-stick plate (532), and a third anti-stick plate (533). A crystal oscillator probe (531) is provided on one side of the inner wall of the vapor deposition chamber (51). The crystal oscillator probe (531) is aligned with a detection evaporation hole (5231) for in-situ monitoring of evaporation data and to avoid impact from the main evaporation flow.

7. The easy-to-process ultra-high vacuum evaporation apparatus as described in claim 6, characterized in that: The vapor deposition chamber (5) is also provided with an observation assembly, which includes an observation window (56) and a reflector (57). A second anti-sticking plate (532) is provided above the side of the crystal oscillator probe (531). A reflector (57) is provided on the other side of the inner wall of the vapor deposition chamber (51). A third anti-sticking plate (533) is provided above the side of the reflector (57). An observation window (56) is provided on the surface of the vapor deposition chamber (5) corresponding to the reflector (57). The reflector (57) reflects the evaporation state to the observation window (56), and the third anti-sticking plate (533) prevents the evaporation material from contaminating the observation window (56).

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