Wafer defect detection method, device and equipment and readable storage medium

Abstract

The invention provides a wafer defect detection method, device and equipment and a readable storage medium, and the method comprises the steps: determining a projection drawing of a defect of a wafer stacking layer, the projection drawing being an orthographic projection of the defect of the wafer stacking layer on one end surface; the wafer stacking layer is a stacking layer of a plurality of target wafers in the same crystal bar; matching the projection drawing with an image in a graphic sample library to obtain a matching result; and determining the defect type of the target wafer according to the matching result. According to the wafer defect detection method provided by the embodiment of the invention, the projection drawing of the wafer stacking layer is matched with the graphic sample library, and the defect type corresponding to the projection drawing is judged according to the corresponding relationship between the image and the defect type in the graphic sample library, so that the original defect and the non-original defect of the wafer can be quickly and effectively distinguished, and the detection accuracy is improved. And the over-detection rate of the original defect of the wafer is reduced, and unnecessary resource waste is avoided.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing technology, and in particular to a wafer defect detection method, device, equipment and readable storage medium. Background Art

[0002] In the wafer production process, the detection of crystal originated particles (COP) is a key link in ensuring product quality. However, since some other defects (such as surface contamination defects such as Pit, lattice defects, grain boundary defects, and pit defects) may show similar characteristics to COP in the wafer overlay distribution, and they are similar to COP samples during the judgment process, non-COP defects are misjudged as COP during the operation, resulting in a high over-inspection rate for COP defects. Wafers judged to be COP defects need to be further confirmed by scanning with an electron microscope (SEM), but after the SEM scan, the wafers will be burned due to surface charge accumulation and scrapped, while wafers with non-COP defects can usually be reworked to obtain wafers that meet the requirements. Therefore, over-inspection of COP defects will lead to unnecessary waste of resources. Summary of the Invention

[0003] Embodiments of the present invention provide a wafer defect detection method, apparatus, device and readable storage medium to solve the problem in the prior art that native wafer defects cannot be distinguished from other defects, resulting in a high pass rate for native wafer defects and unnecessary waste of resources.

[0004] In order to solve the above technical problems, the present invention adopts the following technical solutions:

[0005] In a first aspect, an embodiment of the present invention provides a wafer defect detection method, comprising:

[0006] Determining a projection diagram of a defect in the wafer stack layer, wherein the projection diagram is an orthographic projection of the defect in the wafer stack layer on one end surface thereof; the wafer stack layer is a stacked layer of multiple target wafers in the same crystal ingot;

[0007] Matching the projection image with an image in a graphic sample library to obtain a matching result; the graphic sample library includes a correspondence between images and defect types, and the image is a projection image of the defect appearance of the wafer stack layer;

[0008] The defect type of the target wafer is determined according to the matching result.

[0009] Further, determining the defect type of the target wafer according to the matching result includes:

[0010] When the matching result is that the projection image successfully matches the first image in the pattern sample library, the defect type of the target wafer in the wafer stack layer is the first defect corresponding to the first image, and the first defect is a wafer native defect;

[0011] When the matching result is that the projection image successfully matches the second image in the graphic sample library, the defect type of the target wafer in the wafer stack layer is the second defect corresponding to the second image, and the second defect is a defect other than the native defect of the wafer.

[0012] Furthermore, the projection image successfully matches the first image in the graphic sample library, including:

[0013] The similarity between the projection image and the first image is greater than a preset threshold;

[0014] The projection image successfully matches the second image in the graphic sample library, including:

[0015] The similarity between the projection image and the second image is greater than a preset threshold;

[0016] The similarity is determined based on the defect features of the projection image and the defect features of the images in the graphic sample library; the defect features include at least one of the following: the total area of ​​all defects, the distribution of defects, and the size of each defect.

[0017] Furthermore, before matching the projection image with the image in the graphic sample library, the method includes:

[0018] Detecting whether there are defective projections gathered along the center or edge of the projection image in the projection image;

[0019] If so, the projection image is matched with an image in a graphic sample library; if not, it is determined that the target wafer in the wafer stack layer does not have a wafer-born defect.

[0020] Further, determining the defect type of the target wafer according to the matching result includes:

[0021] When the matching result is that the projection image does not match any image in the graphic sample library, the defect type of the target wafer in the wafer stack layer is a third defect, and the third defect is a defect type to be determined.

[0022] Furthermore, determining a projection diagram of defects in the wafer stack layer includes:

[0023] Emittering a plurality of mutually parallel target light beams toward the wafer stack layer at the first end of the wafer stack layer through a light emitter, wherein the propagation direction of the target light beams is the axial direction of the wafer stack layer, and the target light beams cover the first end of the wafer stack layer;

[0024] A projection image of defects generated by the irradiation of the target light is collected at the second end of the wafer stack layer by an image collector.

[0025] Furthermore, the wafer defect detection method further includes:

[0026] The projection image and the defect type of the target wafer are added to the pattern sample library, and the pattern sample library is updated.

[0027] In a second aspect, an embodiment of the present invention provides a wafer defect detection device, comprising:

[0028] A first determining module is configured to determine a projection diagram of a defect of the wafer stack layer, wherein the projection diagram is an orthographic projection of the defect of the wafer stack layer on one end surface thereof; the wafer stack layer is a stacked layer of multiple target wafers in the same crystal rod;

[0029] A matching module is used to match the projection image with an image in a graphic sample library to obtain a matching result; the graphic sample library includes a correspondence between images and defect types, and the image is a projection image of the defect appearance of the wafer stack layer;

[0030] The second determining module is configured to determine the defect type of the target wafer according to the matching result.

[0031] In a third aspect, an embodiment of the present invention provides a wafer defect detection device, comprising: a transceiver, a memory, a processor, and a computer program stored in the memory and runnable on the processor. When the processor executes the computer program, the steps of the wafer defect detection method as described above are implemented.

[0032] In a fourth aspect, an embodiment of the present invention provides a computer-readable storage medium having a computer program stored thereon, which implements the steps of the wafer defect detection method as described above when executed by a processor.

[0033] The beneficial effects of the present invention are:

[0034] The wafer defect detection method of the embodiment of the present invention can detect multiple wafers of the same batch at one time by coaxially stacking multiple target wafers obtained by cutting the same crystal rod in sequence, thereby improving the detection efficiency; by determining the projection image of the wafer stacking layer, the defects of multiple wafers can be superimposed, effectively solving the problem of low accuracy caused by unclear defect distribution when detecting a single wafer; by matching the projection image of the wafer stacking layer with a graphic sample library, according to the correspondence between the image and the defect type in the graphic sample library, the defect type corresponding to the projection image and the image in the graphic sample library is judged, so that the native defects of the wafer and non-native defects can be effectively distinguished, thereby reducing the pass rate of native defects of the wafer and avoiding unnecessary waste of resources. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 A schematic diagram showing the steps of a wafer defect detection method according to an embodiment of the present invention;

[0036] Figure 2 A schematic diagram showing a module of a wafer defect detection device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0037] To make the technical problems, technical solutions, and advantages to be solved by the present invention more apparent, a detailed description will be given below with reference to the accompanying drawings and specific embodiments. In the following description, specific details such as specific configurations and components are provided solely to facilitate a comprehensive understanding of the embodiments of the present invention. Therefore, it should be clear to those skilled in the art that various changes and modifications may be made to the embodiments described herein without departing from the scope and spirit of the present invention. In addition, descriptions of known functions and configurations have been omitted for clarity and brevity.

[0038] It should be understood that references throughout this specification to "one embodiment" or "an embodiment" mean that a particular feature, structure, or characteristic associated with the embodiment is included in at least one embodiment of the present invention. Therefore, the appearances of "in one embodiment" or "in an embodiment" throughout this specification do not necessarily refer to the same embodiment. Furthermore, these particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0039] The present invention addresses the problem that the prior art cannot distinguish between native wafer defects and other defects, resulting in a high pass rate of native wafer defects and unnecessary waste of resources. A wafer defect detection method, device, equipment and readable storage medium are provided.

[0040] like Figure 1 As shown, an embodiment of the present invention provides a wafer defect detection method, comprising the following steps:

[0041] Step 101: determining a projection diagram of a defect in the wafer stack layer, wherein the projection diagram is an orthographic projection of the defect in the wafer stack layer on one end surface thereof; the wafer stack layer is a stack of multiple target wafers in the same crystal ingot;

[0042] Step 102: Match the projection image with an image in a graphic sample library to obtain a matching result; the graphic sample library includes a correspondence between images and defect types, and the image is a projection image of a defect appearance of a wafer stack layer;

[0043] Step 103: Determine the defect type of the target wafer according to the matching result.

[0044] Optionally, the wafer stacking layer is obtained by coaxially stacking multiple target wafers obtained by cutting the same crystal rod.

[0045] It should be noted that due to the unique process of ingot production, the process parameters during ingot growth are relatively uniform, resulting in defects targeting native defects generally being generated continuously within the ingot. This results in relatively consistent defects at different locations along the axis of the same ingot. In other words, the defect distributions of multiple target wafers cut from the same ingot are relatively similar. Therefore, wafer defect detection can be performed using a wafer stacking method; that is, defects in a wafer stack can reflect defects in individual wafers within that stack.

[0046] It should be noted that when performing defect detection on a single wafer, due to the limitation of wafer thickness, the defects that can be displayed in the defect projection image are very few, resulting in the inability to guarantee detection accuracy;

[0047] By projecting all defects within the entire stacked layer onto the same image, defects in one section of the crystal rod can be stacked, thereby enhancing the appearance of defect distribution characteristics.

[0048] In this embodiment of the present invention, the target wafers are stacked in the same order as the crystal ingot is cut; that is, the stacked wafer layer constitutes one segment of the crystal ingot. By coaxially stacking multiple target wafers obtained by cutting the same crystal ingot, the continuity of the resulting wafer stack layer and the internal defects in the crystal ingot is maintained, thereby improving the accuracy of the projection image of the defects in the wafer stack layer.

[0049] It should be noted that multiple sets of historical data are pre-stored in the image sample library;

[0050] The historical data is the correspondence between the defect projection images of the inspected and verified wafer stack layers and their defect types.

[0051] In an embodiment of the present invention, the projection image is matched with the images in the graphic sample library, that is, the distribution characteristics of defects and the appearance characteristics of defects in the defect projection image of the wafer stacking layer are analyzed through big data statistical analysis; thereby, whether the wafers in the wafer stacking layer have native defects of the wafers is distinguished based on the defect characteristics of the defect stacking projection image of the wafer stacking layer.

[0052] The wafer defect detection method of the embodiment of the present invention can detect multiple wafers of the same batch at one time by coaxially stacking multiple target wafers obtained by cutting the same crystal rod, thereby improving the detection efficiency; by determining the projection image of the wafer stacking layer, the defects of multiple wafers can be superimposed, effectively solving the problem of low accuracy caused by unclear defect distribution when detecting a single wafer; by matching the projection image of the wafer stacking layer with a graphic sample library, according to the correspondence between the image and the defect type in the graphic sample library, the defect type corresponding to the projection image and the image in the graphic sample library is judged, so that the native defects of the wafer and non-native defects can be effectively distinguished, thereby reducing the pass rate of native defects of the wafer and avoiding unnecessary waste of resources.

[0053] For example, determining the defect type of the target wafer according to the matching result includes:

[0054] When the matching result is that the projection image successfully matches the first image in the graphic sample library, the defect type of the target wafer in the wafer stack layer is the first defect corresponding to the first image, and the first defect is a wafer native defect.

[0055] For example, determining the defect type of the target wafer according to the matching result includes:

[0056] When the matching result is that the projection image successfully matches the second image in the graphic sample library, the defect type of the target wafer in the wafer stack layer is the second defect corresponding to the second image, and the second defect is a defect other than the native defect of the wafer.

[0057] Illustratively, the second defect includes at least one of the following:

[0058] Surface contamination defects include Pit, lattice defects, grain boundary defects, and pit defects.

[0059] In an embodiment of the present application, by matching the projection image with the image in the graphic sample library, it is possible to determine, based on the correspondence between the image and the defect type in the graphic sample library, that the defect type corresponding to the image matching the projection image is the defect type of the target wafer.

[0060] Optionally, the projection image successfully matches the first image in the graphic sample library, comprising:

[0061] The similarity between the projection image and the first image is greater than a preset threshold;

[0062] The projection image successfully matches the second image in the graphic sample library, including:

[0063] The similarity between the projection image and the second image is greater than a preset threshold;

[0064] The similarity is determined based on the defect features of the projection image and the defect features of the images in the graphic sample library; the defect features include at least one of the following: the total area of ​​all defects, the distribution of defects, and the size of each defect.

[0065] In an embodiment of the present invention, if the similarity between the projection image and the first image is greater than 80%, then the projection image matches the first image in the graphic sample library; specifically, the similarity can be understood as a weighted value of a first deviation, a second deviation, and a third deviation; the first deviation is the deviation between a first total area of ​​all defects in the projection image and a second total area of ​​all defects in the first image; the second deviation is the deviation between a first coordinate of the center of the defect distribution in the projection image and a second coordinate of the center of the defect distribution in the first image, that is, the deviation of the coordinates of the polar coordinate system with the center of the silicon wafer as the coordinate origin; the third deviation is the deviation between the size of the defect in the projection image and the size of the defect in the first image.

[0066] In the embodiment of the present application, the first deviation is a ratio of the first difference to the second total area, and the first difference is an absolute value of the difference between the first total area and the second total area;

[0067] The second deviation is the sum of the absolute values ​​of the deviations of all dimensions of the first coordinate and the second coordinate;

[0068] The third deviation is the sum of the absolute values ​​of the difference between the first ratio and the second ratio of each size of defects, the first ratio is the ratio of defects of each size in the projection image to defects of all sizes, and the second ratio is the ratio of defects of each size in the first image to defects of all sizes.

[0069] The wafer defect detection method of an embodiment of the present invention can quickly and accurately distinguish wafer native defects from other defects by comparing and matching the projection image of the wafer stacking layer with the image in the graphic sample library, thereby reducing the pass rate of wafer native defects and avoiding unnecessary waste of resources.

[0070] Optionally, before matching the projection image with an image in a graphic sample library, the method further includes:

[0071] Detecting whether there are defective projections gathered along the center or edge of the projection image in the projection image;

[0072] If so, the projection image is matched with an image in a graphic sample library; if not, it is determined that the target wafer in the wafer stack layer does not have a wafer-born defect.

[0073] It should be noted that analysis of the characteristics of wafer-native defects shows that they are generally distributed in the center or edge of the wafer and are clustered. Therefore, before matching the projection image with the images in the pattern sample library, a preliminary screening of the wafer stack can be performed based on the projection image.

[0074] For example, the detection of whether there are defective projections clustered along the center or the edge of the projection image is performed by image recognition technology.

[0075] Specifically, the center or edge of the projection image is captured through image recognition technology. If the image is captured, there are defects in the center or edge of the projection image. If the captured image is larger than a preset size, it is determined that there are defects in the projection image that are concentrated along the center or edge of the projection image.

[0076] The wafer defect detection method according to the embodiment of the present invention can improve the detection efficiency of wafer defects by screening defects in advance.

[0077] Optionally, determining the defect type of the target wafer according to the matching result includes:

[0078] When the matching result is that the projection image does not match any image in the graphic sample library, the defect type of the target wafer in the wafer stack layer is a third defect, and the third defect is a defect type to be determined.

[0079] For example, when the projection image does not match any image in the graphic sample library, the defect of the wafer stack layer can be classified as the third defect, and then further determined through subsequent inspection (such as scanning with an electron microscope) to determine whether it is a native defect of the wafer.

[0080] The wafer defect detection method of an embodiment of the present invention can ensure that native defects of the wafer are not missed by classifying the projection images that do not match any images in the graphic sample library into the third defect type, and avoid wafers with native defects from being mixed into the queue for subsequent processing, resulting in a decrease in the yield of the final product.

[0081] Optionally, determining a projection diagram of defects in the wafer stack layer includes:

[0082] Emittering a plurality of mutually parallel target light beams toward the wafer stack layer at the first end of the wafer stack layer through a light emitter, wherein the propagation direction of the target light beams is the axial direction of the wafer stack layer, and the target light beams cover the first end of the wafer stack layer;

[0083] A projection image of defects generated by the irradiation of the target light is collected at the second end of the wafer stack layer by an image collector.

[0084] For example, the light emitter is a common visible light emitter.

[0085] In the embodiment of the present invention, the energy of the visible light beam is less than a preset value to prevent the light emitted by the light emitter from causing thermal damage to the wafers at the end faces of the wafer stack layer.

[0086] In an embodiment of the present invention, under darker ambient brightness, the light emitter is aimed at the first end of the wafer stack layer to generate multiple beams of parallel light; at the second end of the wafer stack layer, an image collector is used to capture a projection image of defects in the wafer stack layer under the illumination of the light.

[0087] The wafer defect detection method of an embodiment of the present invention can ensure that the continuity of the obtained wafer stacking layer and the internal defects in the crystal rod is not destroyed by coaxially stacking multiple target wafers obtained by cutting the same crystal rod, thereby improving the accuracy of the projection image of the defects of the wafer stacking layer in presenting the defects of the wafer stacking layer.

[0088] It should be noted that in the embodiment of the present application, the wafer defect detection method of the present application is used to detect multiple groups of cut crystal ingots to obtain a first detection result;

[0089] These wafers are then inspected for defects using a conventional electron microscope to obtain a second inspection;

[0090] The result of the first detection is consistent with the result of the second detection, so the result of the wafer defect detection method of the embodiment of the present application is accurate.

[0091] Optionally, the wafer defect detection method further includes:

[0092] The projection image and the defect type of the target wafer are added to the pattern sample library, and the pattern sample library is updated.

[0093] The wafer defect detection method of the embodiment of the present invention can increase the data volume of the graphic sample library by inputting the projection image and the defect type of the target wafer into the graphic sample library, thereby enriching the data of the graphic sample library and improving the detection accuracy.

[0094] like Figure 2As shown, an embodiment of the present invention further provides a wafer defect detection device 200, comprising:

[0095] A first determining module 201 is configured to determine a projection diagram of a defect in the wafer stack layer, wherein the projection diagram is an orthographic projection of the defect in the wafer stack layer on one end face thereof; the wafer stack layer is a stack of multiple target wafers in the same crystal ingot;

[0096] A matching module 202 is configured to match the projection image with an image in a graphic sample library to obtain a matching result; the graphic sample library includes a correspondence between images and defect types, and the image is a projection image of a defect appearance of a wafer stack layer;

[0097] The second determination module 203 is configured to determine the defect type of the target wafer according to the matching result.

[0098] The wafer defect detection device of the embodiment of the present invention can detect multiple wafers of the same batch at one time by coaxially stacking multiple target wafers obtained by cutting the same crystal rod in sequence, thereby improving the detection efficiency; by determining the projection image of the wafer stacking layer, the defects of multiple wafers can be superimposed, effectively solving the problem of low accuracy due to unclear defect distribution when detecting a single wafer; by matching the projection image of the wafer stacking layer with a graphic sample library, according to the correspondence between the image and the defect type in the graphic sample library, the defect type corresponding to the projection image and the image in the graphic sample library is judged, so that native defects and non-native defects of the wafer can be accurately distinguished, thereby reducing the pass rate of native defects of the wafer and avoiding unnecessary waste of resources.

[0099] Optionally, the first determining module is further configured to:

[0100] Emittering a plurality of mutually parallel target light beams toward the wafer stack layer at the first end of the wafer stack layer through a light emitter, wherein the propagation direction of the target light beams is the axial direction of the wafer stack layer, and the target light beams cover the first end of the wafer stack layer;

[0101] A projection image of defects generated by the irradiation of the target light is collected at the second end of the wafer stack layer by an image collector.

[0102] Optionally, the matching module is further configured to:

[0103] Detecting whether there are defective projections gathered along the center or edge of the projection image in the projection image;

[0104] If so, the projection image is matched with an image in a graphic sample library; if not, it is determined that the target wafer in the wafer stack layer does not have a wafer-born defect.

[0105] Optionally, the second determining module is further configured to:

[0106] When the matching result is that the projection image successfully matches the first image in the pattern sample library, the defect type of the target wafer in the wafer stack layer is the first defect corresponding to the first image, and the first defect is a wafer native defect;

[0107] When the matching result is that the projection image successfully matches the second image in the graphic sample library, the defect type of the target wafer in the wafer stack layer is the second defect corresponding to the second image, and the second defect is a defect other than the native defect of the wafer.

[0108] Optionally, the projection image successfully matches the first image in the graphic sample library, comprising:

[0109] The similarity between the projection image and the first image is greater than a preset threshold;

[0110] The projection image successfully matches the second image in the graphic sample library, including:

[0111] The similarity between the projection image and the second image is greater than a preset threshold;

[0112] The similarity is determined based on the defect features of the projection image and the defect features of the images in the graphic sample library; the defect features include at least one of the following: the total area of ​​all defects, the distribution of defects, and the size of each defect.

[0113] Optionally, the wafer defect detection device further includes:

[0114] The third determination module is used to, when the matching result is that the projection image does not match the image in the graphic sample library, determine that the defect type of the target wafer in the wafer stack layer is a third defect, and the third defect is a defect type to be determined.

[0115] Optionally, the wafer defect detection device further includes:

[0116] An updating module is used to add the projection image and the defect type of the target wafer to the graphic sample library, and update the graphic sample library.

[0117] An embodiment of the present invention also provides a wafer defect detection device, comprising: a transceiver, a memory, a processor, and a computer program stored in the memory and runnable on the processor, wherein when the processor executes the computer program, the steps of the wafer defect detection method described above are implemented.

[0118] In addition, a specific embodiment of the present invention further provides a computer-readable storage medium having a computer program stored thereon. When executed by a processor, the program implements the steps of the above-mentioned wafer defect detection method. The same technical effects can be achieved, and to avoid repetition, the details are not repeated here.

[0119] An embodiment of the present application also provides a computer program product, including computer instructions. When the computer instructions are executed by a processor, the various processes of the above-mentioned wafer defect detection method embodiment are implemented and can achieve the same technical effect. To avoid repetition, they will not be repeated here.

[0120] The above is a preferred embodiment of the present invention. It should be pointed out that for ordinary personnel in this technical field, several improvements and modifications can be made without departing from the principles described in the present invention. These improvements and modifications are also within the scope of protection of the present invention.

Claims

1. A wafer defect detection method, characterized in that: include: Determine a projection diagram of a defect of a wafer stack layer, wherein the projection diagram is an orthographic projection of the defect of the wafer stack layer on one end surface thereof; The wafer stack layer is a stack layer of multiple target wafers in the same crystal rod; Matching the projection image with an image in a graphic sample library to obtain a matching result; the graphic sample library includes a correspondence between images and defect types, and the image is a projection image of the defect appearance of the wafer stack layer; The defect type of the target wafer is determined according to the matching result.

2. The wafer defect detection method according to claim 1, wherein: Determining the defect type of the target wafer according to the matching result includes: When the matching result is that the projection image successfully matches the first image in the pattern sample library, the defect type of the target wafer in the wafer stack layer is the first defect corresponding to the first image, and the first defect is a wafer native defect; When the matching result is that the projection image successfully matches the second image in the graphic sample library, the defect type of the target wafer in the wafer stack layer is the second defect corresponding to the second image, and the second defect is a defect other than the native defect of the wafer.

3. The wafer defect detection method according to claim 2, wherein: The projection image successfully matches the first image in the graphic sample library, including: The similarity between the projection image and the first image is greater than a preset threshold; The projection image successfully matches the second image in the graphic sample library, including: The similarity between the projection image and the second image is greater than a preset threshold; The similarity is determined based on the defect features of the projection image and the defect features of the images in the graphic sample library; the defect features include at least one of the following: the total area of ​​all defects, the distribution of defects, and the size of each defect.

4. The wafer defect detection method according to any one of claims 1 to 3, characterized in that: Before matching the projection image with the image in the graphic sample library, the method further includes: Detecting whether there are defective projections gathered along the center or edge of the projection image in the projection image; If so, the projection image is matched with an image in a graphic sample library; if not, it is determined that the target wafer in the wafer stack layer does not have a wafer-born defect.

5. The wafer defect detection method according to claim 1, wherein: Determining the defect type of the target wafer according to the matching result includes: When the matching result is that the projection image does not match any image in the graphic sample library, the defect type of the target wafer in the wafer stack layer is a third defect, and the third defect is a defect type to be determined.

6. The wafer defect detection method according to claim 1, wherein: Determining a projection of defects in the wafer stack layer, comprising: Emittering a plurality of mutually parallel target light beams toward the wafer stack layer at the first end of the wafer stack layer through a light emitter, wherein the propagation direction of the target light beams is the axial direction of the wafer stack layer, and the target light beams cover the first end of the wafer stack layer; A projection image of defects generated by the irradiation of the target light is collected at the second end of the wafer stack layer by an image collector.

7. The wafer defect detection method according to claim 1, wherein: The method further comprises: The projection image and the defect type of the target wafer are added to the pattern sample library, and the pattern sample library is updated.

8. A wafer defect detection device, characterized in that: include: A first determining module is configured to determine a projection diagram of a defect of a wafer stack layer, wherein the projection diagram is an orthographic projection of the defect of the wafer stack layer on one end surface thereof; The wafer stack layer is a stack layer of multiple target wafers in the same crystal rod; A matching module is used to match the projection image with an image in a graphic sample library to obtain a matching result; the graphic sample library includes a correspondence between images and defect types, and the image is a projection image of the defect appearance of the wafer stack layer; The second determining module is configured to determine the defect type of the target wafer according to the matching result.

9. A wafer defect detection device comprising: A transceiver, a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of the wafer defect detection method according to any one of claims 1 to 7 when executing the computer program.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the wafer defect detection method according to any one of claims 1 to 7 are implemented.

Images