Substrate processing apparatus and substrate processing method

Abstract

The invention relates to a substrate processing apparatus and a substrate processing method. The operation of the substrate processing apparatus can be reduced, and the time spent on substrate processing can be shortened. The substrate processing apparatus includes: a holding unit that holds a substrate; a liquid supply unit that sequentially supplies a first processing liquid and a second processing liquid different from the first processing liquid to the main surface of the substrate in a state in which the substrate is held by the holding unit; a friction body which is in contact with the main surface of the substrate and rubs the main surface during the supply process of the first processing liquid and the second processing liquid; a moving unit that moves a contact position of the friction body on the main surface of the substrate in a first axial direction and a second axial direction that intersect each other in a direction parallel to the main surface of the substrate; and a control unit that controls the liquid supply unit and the moving unit so as to move the contact position of the friction body in one direction of the first axial direction during the supply of the first processing liquid, and so as to move the contact position of the friction body in the other direction of the first axial direction during the subsequent supply of the second processing liquid.

Description

[0001] This application is a divisional application of the invention patent application with application number 202011258884.2, application date November 12, 2020, and invention name "Substrate processing device and substrate processing method". Technical Field

[0002] The present disclosure relates to a substrate processing apparatus and a substrate processing method. Background Art

[0003] The substrate processing device described in Patent Document 1 performs a feeding process and a lower surface cleaning process. During the feeding process, two adsorption pads are used to hold the peripheral portion of the lower surface of the substrate. During the lower surface cleaning process, first, the adsorption pad holding the substrate is moved in the positive direction of the X-axis (Figure 6 of Patent Document 1), and then, the cleaning body is pressed against the lower surface of the substrate (Figure 7 of Patent Document 1). After that, the action of moving the two adsorption pads in the negative direction of the X-axis and the action of moving the cleaning body between the two adsorption pads in the positive direction of the Y-axis or the negative direction of the Y-axis are repeated alternately (Figure 8 of Patent Document 1). In this way, the central area of ​​the lower surface of the substrate is cleaned.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2019-106531 Summary of the Invention

[0005] Problems to be solved by the invention

[0006] A technical solution of the present disclosure provides a technology capable of reducing the operations of a substrate processing apparatus and shortening the time required for substrate processing.

[0007] Solutions for solving problems

[0008] A substrate processing apparatus according to a technical solution of the present disclosure comprises:

[0009] a holding portion for holding a substrate;

[0010] a liquid supply portion for sequentially supplying a first processing liquid and a second processing liquid different from the first processing liquid to the main surface of the substrate held by the holding portion;

[0011] a friction body that contacts the main surface of the substrate and rubs the main surface during the supply of the first processing liquid and the second processing liquid;

[0012] a moving portion that moves a contact position of the friction body on the main surface of the substrate in a first axial direction parallel to the main surface of the substrate; and

[0013] A control unit controls the liquid supply unit and the moving unit so that during the supply process of the first processing liquid, the contact position of the friction body moves in one direction of the first axis direction, and during the subsequent supply process of the second processing liquid, the contact position of the friction body moves in the other direction of the first axis direction.

[0014] Effects of the Invention

[0015] According to a technical solution of the present disclosure, the operations of a substrate processing apparatus can be reduced, thereby shortening the time required for substrate processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a top view showing a substrate processing apparatus according to one embodiment.

[0017] Figure 2 Yes Figure 1 A three-dimensional view of the rotary chuck, blower and liquid supply unit.

[0018] Figure 3 This is a flowchart showing a substrate processing method according to one embodiment.

[0019] Figure 4 Yes Figure 3 Flowchart of an example of S2.

[0020] Figure 5 Yes Figure 3 Flowchart of an example of S4.

[0021] Figure 6A Yes Figure 3 A cross-sectional view of the substrate processing apparatus when step S1 is completed.

[0022] Figure 6B It is shown through the substrate Figure 6A A partial top view of the .

[0023] Figure 7A Yes Figure 4 A cross-sectional view of the substrate processing apparatus at the start of S21.

[0024] Figure 7B It is shown through the substrate Figure 7A A partial top view of the .

[0025] Figure 8A Yes Figure 4 A cross-sectional view of the substrate processing apparatus when S21 is completed.

[0026] Figure 8B It is shown through the substrate Figure 8A A partial top view of the .

[0027] Figure 9 It is shown through the substrate Figure 4 A partial top view of the substrate processing apparatus at the start of S22.

[0028] Figure 10 It is shown through the substrate Figure 4 A partial top view of the substrate processing apparatus when S22 is completed.

[0029] Figure 11 Yes Figure 3 A cross-sectional view of the substrate processing apparatus at the start of S4. DETAILED DESCRIPTION

[0030] The following describes embodiments of the present disclosure with reference to the accompanying drawings. In the drawings, identical or corresponding structures may be denoted by the same reference numerals, and their descriptions may be omitted. In this specification, the X-axis, Y-axis, and Z-axis are mutually perpendicular directions. The X-axis and Y-axis are horizontal, and the Z-axis is vertical.

[0031] When the substrate W is held horizontally, the X-axis and Y-axis directions are parallel to the main surface of the substrate W. The X-axis direction is the direction of movement of the pair of adsorption pads 24, and the Y-axis direction is the direction of movement of the friction body 70. The X-axis direction corresponds to the first axis direction, and the Y-axis direction corresponds to the second axis direction. In this embodiment, the first and second axis directions are orthogonal, but may also be obliquely intersecting directions.

[0032] like Figure 1 As shown, the substrate processing apparatus 10 includes a holding portion 20, a liquid supply portion 30, a friction body 70, a moving portion 80, and a control portion 90. The holding portion 20 contacts the lower surface of the substrate W and holds the substrate W horizontally. The liquid supply portion 30 sequentially supplies a first processing liquid and a second processing liquid different from the first processing liquid to the lower surface of the substrate W while being held by the holding portion 20. The friction body 70 contacts the lower surface of the substrate W during the supply of the first processing liquid and the second processing liquid, and rubs the lower surface of the substrate W, thereby scrubbing the lower surface of the substrate W. The moving portion 80 moves the holding portion 20 and the friction body 70 relative to each other in the X-axis direction and the Y-axis direction, thereby moving the contact position of the friction body 70 on the main surface of the substrate W. The control portion 90 controls the liquid supply portion 30 and the moving portion 80 to process the lower surface of the substrate W.

[0033] like Figure 6AAs shown, the holding portion 20 contacts the lower surface of the substrate W and holds the substrate W horizontally. The substrate W is, for example, a semiconductor substrate or a glass substrate. The semiconductor substrate is, for example, a silicon wafer or a compound semiconductor wafer. Devices may be pre-formed on at least one of the lower and upper surfaces of the substrate W. The devices may include semiconductor elements, circuits, or terminals. The holding portion 20 includes a first holding portion 21 and a second holding portion 22.

[0034] The first holding portion 21 adsorbs Figure 6B The first holding portion 21 is positioned in the first area A1 of the lower surface of the substrate W and holds the substrate W. The first area A1 is an area that includes the center of the lower surface of the substrate W. The boundary B between the first area A1 and the second area A2 is, for example, rectangular. Two sides of the rectangle are parallel to the X-axis, the remaining two sides are parallel to the Y-axis, and the four corners of the rectangle are arc-shaped with the same radius as the upper surface of the friction body 70. The first holding portion 21 includes, for example, a spin chuck 23.

[0035] like Figure 6A As shown, the rotary chuck 23 is connected to the rotating mechanism 15. The rotating mechanism 15 rotates the rotary chuck 23 about a vertical axis. The rotation centerline is parallel to the Z-axis. The rotary chuck 23 is moved in the Z-axis direction by the lifting mechanism 16. In addition, the rotary chuck 23 does not move in the X-axis and Y-axis directions.

[0036] A transfer member 17 is disposed around the spin chuck 23. The transfer member 17 includes, for example, a plurality of lift pins 171, which are arranged at equal intervals around the circumference of the spin chuck 23. The transfer member 17 is raised and lowered around the spin chuck 23 to receive a substrate W from a transport device (not shown) and deliver the received substrate W to the second holding portion 22.

[0037] Furthermore, a gas ejection ring 18 is disposed around the spin chuck 23. The gas ejection ring 18 surrounds the spin chuck 23 and forms an annular gas curtain toward the lower surface of the substrate W. The gas curtain restricts the first and second processing liquids from entering from the outside, thereby protecting the spin chuck 23. The gas curtain also protects the transfer member 17.

[0038] like Figure 2 and Figure 6B As shown, the gas ejection ring 18 comprises a cylindrical body 181 and a plurality of ejection ports 182 arranged circumferentially on the upper surface of the cylindrical body 181. The plurality of ejection ports 182 eject gas upward, forming an annular air curtain. The gas is an inert gas such as nitrogen or dry air.

[0039] The second holding portion 22 adsorbs Figure 6BThe second holding portion 22 holds the second area A2 of the lower surface of the substrate W. The second area A2 includes the periphery of the lower surface of the substrate W and is in contact with the periphery of the first area A1. The second holding portion 22 includes a pair of suction pads 24 spaced apart in the Y-axis direction.

[0040] like Figure 1 As shown, a pair of suction pads 24 are fixed to the longitudinal centers of a pair of first rods 25. The pair of first rods 25 are arranged across the spin chuck 23 and are mounted on a pair of second rods 26. The pair of first rods 25 and the pair of second rods 26 form a square frame 27.

[0041] The frame 27 is connected to the first moving portion 81 of the moving portion 80. The first moving portion 81 moves the pair of suction pads 24 in the X-axis direction via the frame 27. Furthermore, the frame 27 is connected to the lifting mechanism 19. The lifting mechanism 19 moves the pair of suction pads 24 in the Z-axis direction via the frame 27.

[0042] A ring cover 14 is fixed to the frame 27. The ring cover 14 surrounds the substrate W over its entire circumference to prevent droplets from scattering from the substrate W. The ring cover 14 has an opening on its upper surface with a diameter larger than that of the substrate W. The opening serves as a passage for the substrate W.

[0043] The liquid supply unit 30 sequentially supplies a first processing liquid and a second processing liquid different from the first processing liquid to the lower surface of the substrate W held by the holding unit 20. The first processing liquid is a cleaning liquid for removing dirt from the substrate W, and is, for example, a chemical solution such as SC1 (a mixture of ammonia, hydrogen peroxide, and water). In addition, the type of chemical solution is not particularly limited. On the other hand, the second processing liquid is a rinse liquid for removing the first processing liquid, and is, for example, DIW (deionized water). The first processing liquid may not be a cleaning liquid, but may be an etching liquid or a stripping liquid. In addition, the second processing liquid may not be DIW, but may be diluted ammonia water or ozone water.

[0044] like Figure 2 As shown, the liquid supply unit 30 includes, for example, lower nozzles 31 and 32. When the friction body 70 rubs the first area A1 and the second area A2, the lower nozzle 31 supplies a chemical solution or a rinse liquid. Furthermore, when the friction body 70 rubs the periphery of the second area A2, the lower nozzle 32 supplies a chemical solution or a rinse liquid.

[0045] The lower nozzle 31 has a chemical solution outlet 311 and a rinse liquid outlet 312. The chemical solution outlet 311 is positioned below the rinse liquid outlet 312. This prevents the chemical solution from adhering to the rinse liquid outlet 312. The chemical solution outlet 311 may be provided in multiple or single locations. Similarly, the rinse liquid outlet 312 may be provided in multiple or single locations.

[0046] like Figure 1 As shown, the lower nozzle 31 is connected to a chemical solution supply source 34 via a pipe 33. An on-off valve 35 and a flow controller 36 are provided midway along the pipe 33. When the on-off valve 35 opens the flow path of the pipe 33, the chemical solution is supplied from the chemical solution supply source 34 to the lower nozzle 31, and the chemical solution is discharged from the discharge port 311. The discharge amount is controlled by the flow controller 36. On the other hand, when the on-off valve 35 closes the flow path of the pipe 33, the supply of the chemical solution from the chemical solution supply source 34 to the lower nozzle 31 is stopped, and the discharge of the chemical solution is stopped.

[0047] The lower nozzle 31 is connected to a rinsing liquid supply source 38 via a pipe 37. An on-off valve 39 and a flow controller 40 are provided midway along the pipe 37. When the on-off valve 39 opens the flow path of the pipe 37, rinsing liquid is supplied from the rinsing liquid supply source 38 to the lower nozzle 31, and the rinsing liquid is ejected from the ejection port 312. The ejection amount is controlled by the flow controller 40. On the other hand, when the on-off valve 39 closes the flow path of the pipe 37, the supply of rinsing liquid from the rinsing liquid supply source 38 to the lower nozzle 31 is stopped, and the ejection of the rinsing liquid is stopped.

[0048] like Figure 2 As shown, similar to the lower nozzle 31, the lower nozzle 32 has a chemical solution discharge port 321 and a rinse liquid discharge port 322. Also, similar to the lower nozzle 31, the lower nozzle 32 is connected to a chemical solution supply source 42 via a pipe 41. An on-off valve 43 and a flow rate controller 44 are provided midway along the pipe 41. Furthermore, the lower nozzle 32 is connected to a rinse liquid supply source 46 via a pipe 45. An on-off valve 47 and a flow rate controller 48 are provided midway along the pipe 45.

[0049] The liquid supply unit 30 also supplies the processing liquid to the upper surface of the substrate W held by the holding unit 20. For example, a rinse liquid such as DIW is used as the processing liquid. In addition, a chemical solution and a rinse liquid may be used in sequence as the processing liquid. Figure 1 As shown in FIG. 1 and FIG. 2 , the liquid supply unit 30 includes, for example, upper nozzles 51 and 52 .

[0050] The upper nozzle 51 supplies processing liquid toward the center of the upper surface of the substrate W as it rotates. Centrifugal force causes the processing liquid to wet the entire upper surface of the substrate W, spreading across it and being dropped off at the periphery of the substrate W. Similar to the lower nozzle 31, the upper nozzle 51 is connected to a processing liquid supply source 54 via a pipe 53. An on-off valve 55 and a flow controller 56 are provided midway along the pipe 53.

[0051] The upper nozzle 52 moves in the radial direction of the substrate W as the substrate W rotates, supplying the processing liquid across the entire radial direction of the upper surface of the substrate W. The liquid supply unit 30 includes a moving device 65 that moves the upper nozzle 52 in the radial direction of the substrate W. The upper nozzle 52 is a two-fluid nozzle that uses a gas such as N2 gas to pulverize the processing liquid, atomizing it and spraying it. This improves the processing efficiency of the processing liquid.

[0052] Similar to the lower nozzle 31, the upper nozzle 52 is connected to the processing liquid supply source 58 via the piping 57. An on-off valve 59 and a flow controller 60 are provided in the middle of the piping 57. In addition, the upper nozzle 52 is connected to the gas supply source 62 via the piping 61. An on-off valve 63 and a flow controller 64 are provided in the middle of the piping 61. When the on-off valve 63 opens the flow path of the piping 61, gas is supplied from the gas supply source 62 to the upper nozzle 52, and gas is ejected from the upper nozzle 52. The ejection amount is controlled by the flow controller 64. On the other hand, when the on-off valve 63 closes the flow path of the piping 61, the gas supply from the gas supply source 62 to the upper nozzle 52 is stopped, and the ejection of gas is stopped.

[0053] The various treatment liquids ejected from the liquid supply unit 30 are recovered by the treatment tank 11. The treatment tank 11 is, for example, in the shape of a box. Figure 6A As shown in FIG. 1 , a drain pipe 12 for discharging the treated liquid and an exhaust pipe 13 for discharging the gas are provided on the bottom wall of the treatment tank 11 .

[0054] The friction body 70 contacts and rubs the lower surface of the substrate W. The friction body 70 is a brush or sponge. The friction body 70 is, for example, cylindrical, with its upper surface positioned horizontally. The upper surface of the friction body 70 is smaller than the lower surface of the substrate W. While the friction body 70 is positioned below the substrate W in this embodiment, it may also be positioned above the substrate W to rub the upper surface of the substrate W.

[0055] The friction body 70 is connected to a rotary motor 72 via a vertical rotary shaft 71. The rotary motor 72 rotates the friction body 70 about the rotary shaft 71. The rotary motor 72 is connected to a second moving portion 82 of the moving portion 80 via an arm 73. The second moving portion 82 moves the friction body 70 in the Y-axis direction. The second moving portion 82 also moves the friction body 70 in the Z-axis direction.

[0056] The moving portion 80 moves the holding portion 20 and the friction body 70 relative to each other in the X-axis and Y-axis directions, thereby moving the contact position of the friction body 70 on the lower surface of the substrate W. For example, the moving portion 80 includes a first moving portion 81 and a second moving portion 82. As described above, the first moving portion 81 moves the second holding portion 22 in the X-axis direction. On the other hand, as described above, the second moving portion 82 moves the friction body 70 in the Y-axis direction.

[0057] The control unit 90 is, for example, a computer. Figure 1 As shown, the control unit 90 includes a CPU (Central Processing Unit) 91 and a storage medium 92, such as a memory. The storage medium 92 stores programs for controlling various processes performed by the substrate processing apparatus 10. The control unit 90 controls the operation of the substrate processing apparatus 10 by having the CPU 91 execute the programs stored in the storage medium 92. Furthermore, the control unit 90 includes an input interface 93 and an output interface 94. The control unit 90 receives external signals using the input interface 93 and transmits external signals using the output interface 94.

[0058] The program is stored in a computer-readable storage medium, for example, and is loaded from the storage medium into the storage medium 92 of the control unit 90. Examples of computer-readable storage media include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card. Alternatively, the program may be downloaded from a server via the Internet and loaded into the storage medium 92 of the control unit 90.

[0059] Next, refer to Figure 3 The operation of the substrate processing apparatus 10, that is, the substrate processing method will be described. Figure 3 As shown, the substrate processing method includes holding S1, lower surface processing S2, exchange holding S3, double-side processing S4 and drying S5. This processing method is implemented under the control of the control unit 90.

[0060] In holding S1, the second holding portion 22 holds the substrate W. Specifically, first, the conveying device (not shown) conveys the substrate W to the top of the rotary chuck 23 and stands by. Then, the transfer member 17 rises around the rotary chuck 23, protrudes upward from the opening of the ring cover 14, and lifts the substrate W from the conveying device. Then, when the conveying device exits from the substrate processing device 10, the moving portion 80 raises the ring cover 14 and the pair of adsorption pads 24. Thereafter, the transfer member 17 descends and hands over the substrate W to the pair of adsorption pads 24. Then, the pair of adsorption pads 24 adsorbs the second area A2 of the lower surface of the substrate W and holds it. As described above, the second area A2 is an area that includes the periphery of the lower surface of the substrate W and is connected to the periphery of the first area A1.

[0061] In the lower surface treatment S2, the rubbing body 70 rubs the first area A1 of the lower surface of the substrate W while the substrate W is held by the second holding portion 22. As described above, the first area A1 is an area including the center of the lower surface of the substrate W and is an area between the pair of adsorption pads 24. Figure 4 As shown, the lower surface treatment S2 includes a chemical solution treatment S21 and a rinse liquid treatment S22.

[0062] In the chemical solution processing S21, the control unit 90 controls the moving unit 80 and the liquid supply unit 30. In the chemical solution supply process, as shown in FIG. Figure 7B and Figure 8B As shown, the contact position of the friction body 70 on the lower surface of the substrate W is moved within the first area A1. In addition, in the chemical solution treatment S21, the control unit 90 controls the rotary motor 72 to rotate the friction body 70.

[0063] The control unit 90 alternately repeats the operation of moving the second holding unit 22 in the positive direction of the X axis to move the contact position of the friction body 70 in the negative direction of the X axis, and the operation of moving the friction body 70 in the positive direction of the Y axis or the negative direction of the Y axis. Figure 8B As shown, the movement path of the rotation center of the friction body 70 is a zigzag trajectory.

[0064] In the chemical solution treatment S21, as described above, the second holding unit 22 is moved in the positive X-axis direction. The positive X-axis direction is a direction that moves the center of the substrate W held by the second holding unit 22 away from the center of the first holding unit 21. Compared to the conventional method of temporarily moving the second holding unit 22 in the positive X-axis direction before scrubbing, and then performing scrubbing while moving the second holding unit 22 in the negative X-axis direction, this method can eliminate unnecessary movements and shorten processing time.

[0065] In addition, the transfer member 17 is arranged around the rotating chuck 23. Therefore, Figure 6A As shown, the second holding unit 22 receives the substrate W at a position where the center line of the spin chuck 23 coincides with the center of the substrate W. Therefore, the subsequent movement direction of the second holding unit 22 in the X-axis direction is initially the positive X-axis direction. Thus, in the chemical solution treatment S21, the second holding unit 22 is moved in the positive X-axis direction.

[0066] Furthermore, according to this embodiment, scrubbing is performed while the second holding unit 22 is moved in the positive X-axis direction. This can suppress the drying of the chemical solution adhering to the substrate W, compared to conventional methods in which scrubbing is performed while the second holding unit 22 is moved in the negative X-axis direction. Since the positive X-axis direction moves the center of the substrate W away from the center of the first holding unit 21, it also moves the first area A1 away from the gas ejection ring 18. By moving the first area A1 away from the gas curtain, the drying of the chemical solution adhering to the substrate W can be suppressed, thereby suppressing the generation of particles.

[0067] Furthermore, if the gas ejection ring 18 does not form an air curtain during the supply of the chemical solution, it is possible to suppress the drying of the chemical solution adhering to the substrate W. However, since no air curtain is formed, the chemical solution may splash onto the spin chuck 23. According to this embodiment, the gas ejection ring 18 forms an air curtain during the supply of the chemical solution, thereby protecting the spin chuck 23 from the chemical solution.

[0068] In the rinse liquid process S22, the control unit 90 controls the moving unit 80 and the liquid supply unit 30. In the rinse liquid supply process, as shown in FIG. Figure 9 and Figure 10 As shown, the contact position of the friction body 70 on the lower surface of the substrate W is moved within the first area A1. In the rinse liquid process S22, the control unit 90 controls the rotary motor 72 to rotate the friction body 70.

[0069] The control unit 90 alternately repeats the operation of moving the second holding unit 22 in the negative direction of the X axis to move the contact position of the friction body 70 in the positive direction of the X axis, and the operation of moving the friction body 70 in the positive direction of the Y axis or the negative direction of the Y axis. Figure 10 As shown, the movement path of the rotation center of the friction body 70 is a zigzag trajectory.

[0070] During the chemical solution treatment ( S21 ) and the rinse solution treatment ( S22 ), the contact position of the friction member 70 moves in the X-axis direction, but in opposite directions. There is no need to move the contact position of the friction member 70 after the chemical solution treatment ( S21 ) and before the rinse solution treatment ( S22 ). This eliminates unnecessary movement and shortens processing time. This effect can be achieved by moving the contact position of the friction member 70 in the X-axis direction in opposite directions during the chemical solution treatment ( S21 ) and the rinse solution treatment ( S22 ).

[0071] During the rinse liquid process S22, as described above, the second holding unit 22 is moved in the negative X-axis direction. The negative X-axis direction is a direction that brings the center of the substrate W held by the second holding unit 22 closer to the center of the first holding unit 21. Therefore, the operations required to align the second holding unit 22 and the first holding unit 21 after the rinse liquid process S22 and before the exchange holding S3 can be reduced, thereby shortening the processing time of the substrate W.

[0072] In the exchange holding S3, the control unit 90 transfers the substrate W from the second holding unit 22 to the first holding unit 21. First, the first moving unit 81 moves the second holding unit 22 in the negative X-axis direction, aligning the center of the substrate W held by the second holding unit 22 with the center of the first holding unit 21. Next, the lifting mechanism 19 lowers the second holding unit 22, placing the substrate W on the first holding unit 21. At this point, the second holding unit 22 releases its suction holding of the substrate W, and the first holding unit 21 suctions and holds the first area A1 on the lower surface of the substrate W.

[0073] Alternatively, instead of lowering the second holding portion 22 using the lifting mechanism 19, the first holding portion 21 may be raised using the lifting mechanism 16 to transfer the substrate W from the second holding portion 22 to the first holding portion 21. Regardless of which method is used, the second area A2 of the lower surface of the substrate W can be processed after the exchange of the holding portions S3, and the first area A1 of the lower surface of the substrate W can be processed before the exchange of the holding portions S3. Therefore, the entire lower surface of the substrate W can be processed.

[0074] In the double-side processing S4, the second area A2 of the lower surface of the substrate W is processed and the entire upper surface of the substrate W is processed. Figure 5 As shown in FIG. 4 , the treatment of the second area A2 of the lower surface includes a chemical solution treatment S41 and a rinse solution treatment S42. Figure 5 As shown, the entire upper surface treatment includes the spin coating process S43 and the scanning process S44. Alternatively, the first area A1 of the lower surface may also be partially treated during the treatment of the second area A2 of the lower surface. This is sufficient as long as the first holding portion 21 and the friction body 70 do not interfere with each other.

[0075] During the chemical solution treatment S41, the control unit 90 controls the liquid supply unit 30 and the second moving unit 82, while the substrate W is held by the first holding unit 21 and rotated by the rotation mechanism 15. This controls the contact position of the friction body 70 to move across the entire second area A2 during the chemical solution supply process. The contact position of the friction body 70 may also extend from the second area A2 toward the first area A1 while moving across the entire second area A2. The second moving unit 82 gradually moves the contact position of the friction body 70 radially outward of the substrate W. Furthermore, during the chemical solution treatment S41, the control unit 90 controls the rotation motor 72 to rotate the friction body 70.

[0076] During the rinse liquid process S42, the control unit 90 controls the liquid supply unit 30 and the second moving unit 82, while the substrate W is held by the first holding unit 21 and rotated by the rotation mechanism 15. This allows the contact position of the friction body 70 to move across the entire second area A2 during the rinse liquid supply process. The contact position of the friction body 70 may also extend from the second area A2 toward the first area A1 while moving across the entire second area A2. The second moving unit 82 gradually moves the contact position of the friction body 70 radially outward relative to the substrate W. Furthermore, during the rinse liquid process S42, the control unit 90 controls the rotation motor 72 to rotate the friction body 70.

[0077] In the spin coating process S43, the rotation mechanism 15 rotates the substrate W together with the spin chuck 23, and the upper nozzle 51 supplies a processing liquid toward the center of the upper surface of the substrate W. The processing liquid wets the entire upper surface of the substrate W due to centrifugal force and spreads across the entire upper surface of the substrate W, flushing away contaminants separated from the substrate W radially outward. A rinse liquid such as DIW is used as the processing liquid. Alternatively, a chemical solution and a rinse liquid may be used in sequence as the processing liquid.

[0078] The rotation mechanism 15 rotates the spin chuck 23 at a low speed to prevent residual liquid on the lower surface of the substrate W from flowing around the periphery of the substrate W and onto the upper surface of the substrate W due to centrifugal force. The control unit 90 controls the rotation speed of the spin chuck 23 and the supply rate of the processing liquid from the upper nozzle 51 so that a liquid film of the processing liquid is formed on the entire upper surface of the substrate W before the residual liquid on the lower surface of the substrate W reaches the periphery of the substrate W.

[0079] The control unit 90 performs bevel processing on the substrate W while the spin chuck 23 is rotating at a low speed. During the bevel processing, a friction member (not shown), such as a brush or sponge, is pressed against the periphery of the substrate W to rub the periphery. During the low-speed rotation of the spin chuck 23, the control unit 90 terminates the bevel processing on the substrate W and moves the friction member away from the periphery of the substrate W. The low centrifugal force during low-speed rotation reduces the velocity of droplets falling from the periphery of the substrate W, thereby suppressing liquid splashing caused by collisions between the droplets and the friction member.

[0080] In the scanning process S44, the rotation mechanism 15 rotates the substrate W together with the spin chuck 23, the upper nozzle 52 supplies the processing liquid toward the center of the upper surface of the substrate W, and the moving device 65 moves the upper nozzle 52 from the radial inner side to the radial outer side of the substrate W. Dirt separated from the substrate W is washed away radially outward from the substrate W.

[0081] The upper nozzle 52 gradually moves from a position directly above the center of the substrate W to a position directly above the periphery of the substrate W while spraying the processing liquid toward the upper surface of the substrate W, stopping at a position directly above the periphery of the substrate W within a set time. This is because contaminants tend to adhere to the periphery of the substrate W. According to this embodiment, contaminants adhering to the periphery of the substrate W can be removed.

[0082] The upper nozzle 52 moves radially outward of the substrate W in this embodiment, but may move radially inward of the substrate W. The upper nozzle 52 scans once in this embodiment, but may scan multiple times.

[0083] In the scanning process S44, the control unit 90 increases the rotation speed of the spin chuck 23 compared to the spin coating process S43, and rotates the spin chuck 23 at a high speed. When the upper nozzle 52 is moved in the radial direction of the substrate W, the processing liquid can be blown off over the entire circumference of the substrate W.

[0084] The upper nozzle 52 is a two-fluid nozzle, for example, that uses a gas such as N₂ gas to pulverize the processing liquid, atomizing it and then spraying it. This improves the processing efficiency of the processing liquid. The upper nozzle 52 sprays only the gas before spraying the mixed fluid of gas and processing liquid. This reliably pulverizes the processing liquid and prevents splashing when the processing liquid collides with the substrate W.

[0085] In the drying step S5 , the spin chuck 23 is rotated at a high speed to shake off the processing liquid adhering to the substrate W. Thereafter, the substrate W is transported to the outside of the substrate processing apparatus 10 . Thus, the processing of the substrate W is completed.

[0086] While embodiments of the substrate processing apparatus and substrate processing method disclosed herein have been described above, the present disclosure is not limited to the aforementioned embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims, and these naturally fall within the technical scope of the present disclosure.

Claims

1. A substrate processing device, wherein: The substrate processing device comprises: a holding portion for holding a substrate; a liquid supply portion for sequentially supplying a first processing liquid and a second processing liquid different from the first processing liquid to the main surface of the substrate held by the holding portion; a friction body that contacts the main surface of the substrate and rubs the main surface during the supply of the first processing liquid and the second processing liquid; a moving portion that moves a contact position of the friction body on the main surface of the substrate in a first axial direction parallel to the main surface of the substrate; as well as A control unit controls the liquid supply unit and the moving unit so that during the supply process of the first processing liquid, the contact position of the friction body moves in one direction of the first axis direction, and during the subsequent supply process of the second processing liquid, the contact position of the friction body moves in the other direction of the first axis direction.

2. The substrate processing apparatus according to claim 1, wherein: The main surface of the substrate is the lower surface of the substrate, The holding portion includes: a first holding portion that sucks and holds a first area of ​​the lower surface of the substrate, the first area including a center of the lower surface of the substrate; and a second holding portion that sucks and holds a second region of the lower surface of the substrate, the second region including a periphery of the lower surface of the substrate and in contact with a periphery of the first region, The control unit controls the liquid supply unit and the moving unit while the substrate is held by the second holding unit, so that during the supply process of the first processing liquid, the contact position of the friction body moves in one direction of the first axis direction within the first region, and during the subsequent supply process of the second processing liquid, the contact position of the friction body moves in the other direction of the first axis direction within the first region.

3. The substrate processing apparatus according to claim 2, wherein: The substrate processing apparatus further comprises: a lifting mechanism for lifting the first holding portion and the second holding portion relative to each other and transferring the substrate from the second holding portion to the first holding portion; and a rotating mechanism for rotating the first holding portion. The control unit moves the contact position of the friction body over the entire second region during supply of the first processing liquid in a state where the substrate is held by the first holding unit and the first holding unit is rotated by the rotation mechanism.

4. The substrate processing apparatus according to claim 3, wherein: The liquid supply unit includes an upper nozzle for supplying the processing liquid to the upper surface of the substrate. The control unit controls the liquid supply unit to supply the processing liquid to the upper surface of the substrate while the contact position of the friction body is moved over the entire second region.

5. A substrate processing method, wherein: The substrate processing method includes: holding the substrate using the holding portion; supplying a first processing liquid and a second processing liquid different from the first processing liquid in sequence to the main surface of the substrate; rubbing the main surface of the substrate with a friction body in contact with the main surface of the substrate; and moving the contact position of the friction body on the main surface of the substrate in a first axis direction parallel to the main surface of the substrate, Regarding the movement of the contact position of the friction body, during the supply process of the first processing liquid, the contact position of the friction body is moved in one direction of the first axis direction, and during the subsequent supply process of the second processing liquid, the contact position of the friction body is moved in the other direction of the first axis direction.

6. The substrate processing method according to claim 5, wherein: The main surface of the substrate is the lower surface of the substrate, The holding portion includes: a first holding portion that sucks and holds a first area of ​​the lower surface of the substrate, the first area including a center of the lower surface of the substrate; and a second holding portion that sucks and holds a second region of the lower surface of the substrate, the second region including a periphery of the lower surface of the substrate and in contact with a periphery of the first region, In a state where the substrate is held by the second holding portion, during the supply of the first processing liquid, the contact position of the friction body is moved in one direction of the first axis direction within the first region, and during the subsequent supply of the second processing liquid, the contact position of the friction body is moved in the other direction of the first axis direction within the first region.

7. The substrate processing method according to claim 6, wherein: The substrate processing method further includes: raising and lowering the first holding portion and the second holding portion relative to each other, and transferring the substrate from the second holding portion to the first holding portion; and In a state where the substrate is held by the first holding portion and the first holding portion is rotated, the contact position of the friction body is moved over the entire second region during supply of the first processing liquid.

8. The substrate processing method according to claim 7, wherein: The substrate processing method includes: While the contact position of the friction body is moved over the entire second region, a processing liquid is supplied to the upper surface of the substrate.

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