A semiconductor power device drive regulation circuit

Abstract

This invention discloses a semiconductor power device drive regulation circuit, relating to the field of semiconductor power device technology. It includes a drive regulation module that drives and regulates pulse signals provided by a microcontroller module, thereby driving the semiconductor power device module to regulate the power of DC power supplied by a power module. A conduction detection module detects the conduction voltage of the semiconductor power device module, calculates the voltage difference between a set conduction voltage threshold and the detected conduction voltage, and determines the degree of decrease and increase in conduction voltage. Based on the degree of decrease and increase in voltage, the drive regulation module automatically adjusts the drive level, thereby regulating the turn-on and turn-off times of the semiconductor power device. When the degree of change in conduction voltage exceeds the set difference threshold, the semiconductor power device is controlled to stop operating. This semiconductor power device drive regulation circuit improves the control accuracy and drive efficiency of semiconductor power devices, and enhances circuit safety.

Description

Technical Field

[0001] This invention relates to the field of semiconductor power device technology, specifically a semiconductor power device drive regulation circuit. Background Technology

[0002] Semiconductor power devices (also known as power electronic devices) are semiconductor components specifically designed to process high-power electrical signals. Their core functions include power conversion (such as AC / DC conversion), circuit control (such as switching and regulation), and power amplification. In existing technologies, a drive circuit composed of components such as transistors is generally used. The driver provides the drive signal to realize the conduction drive regulation and control of the semiconductor power device. However, after long-term use or when affected by temperature, the conduction voltage of the semiconductor power device will change, thereby reducing the driving efficiency of the driver and drive circuit for the semiconductor power device and reducing the driving accuracy. Therefore, improvements are needed. Summary of the Invention

[0003] This invention provides a semiconductor power device drive regulation circuit to solve the problems mentioned in the background art.

[0004] According to an embodiment of the present invention, a semiconductor power device drive regulation circuit is provided, comprising: a power supply module for converting and regulating the input electrical energy and outputting DC power;

[0005] The microcontroller module, connected to the continuity detection module, is used to provide pulse signals and receive the continuity signal output by the continuity detection module;

[0006] The drive adjustment module is connected to the microcontroller module, the status judgment module, the power supply module and the semiconductor power device module. It is used to amplify and adjust the pulse signal and output the drive signal. When it receives the first adjustment signal or the second adjustment signal output by the status judgment module, it adjusts the voltage of the drive signal and adjusts the drive speed of the semiconductor power device module.

[0007] A semiconductor power device module, connected to a power supply module, is used to perform power regulation on the input DC power and output the first power when a drive signal is received.

[0008] The continuity detection module is connected to the semiconductor power device module and is used to differentially amplify the DC power and the first power input to the semiconductor power device module and output a continuity signal.

[0009] The status judgment module, connected to the conduction detection module, is used to set the conduction voltage threshold. When the voltage of the conduction signal is greater than the conduction voltage threshold, the conduction signal and the conduction voltage threshold are subtracted and clamped, and a first adjustment signal is output. When the voltage of the conduction signal is less than the conduction voltage threshold, the conduction voltage threshold and the conduction signal are subtracted and clamped, and a second adjustment signal is output. When either the first adjustment signal or the second adjustment signal is greater than the set difference threshold, the semiconductor power device module is controlled to stop receiving drive signals.

[0010] As a further embodiment of the present invention: the power module includes a power supply device; the semiconductor power device module includes a sixth resistor, a fifth resistor, a second capacitor, a first capacitor, a ninth resistor, and a semiconductor power device;

[0011] Preferably, the first output terminal of the power supply device is connected to one end of the fifth resistor and the input terminal of the semiconductor power device through the sixth resistor, the other end of the fifth capacitor is connected to the first end of the first capacitor and the driving terminal of the semiconductor power device through the second capacitor, and the output terminal of the semiconductor power device is connected to the second end of the first capacitor and connected to the ground terminal and ground terminal of the power supply device through the ninth resistor.

[0012] As a further embodiment of the present invention: the continuity detection module includes a seventh resistor, an eighth resistor, a third capacitor, a fourth capacitor, a fifth capacitor, a first operational amplifier, a second operational amplifier, a tenth resistor, an eleventh resistor, a twelfth resistor, a thirteenth resistor, a fourteenth resistor, a fifteenth resistor, a sixteenth resistor, and a third operational amplifier; the microcontroller module includes a first controller;

[0013] Preferably, the non-inverting input of the first operational amplifier is connected to one end of the third capacitor and one end of the seventh resistor and grounded through the fourth capacitor; the inverting input of the first operational amplifier is connected to one end of the tenth resistor and connected to the inverting input of the second operational amplifier and one end of the fourteenth resistor through the thirteenth resistor; the other end of the tenth resistor is connected to the output terminal of the first operational amplifier and connected to one end of the twelfth resistor and the non-inverting input of the third operational amplifier through the eleventh resistor; the inverting input of the third operational amplifier is connected to one end of the fifteenth resistor and grounded through the sixteenth resistor; the other end of the fifteenth resistor is connected to the output terminal of the second operational amplifier and the other end of the fourteenth resistor; the non-inverting input of the second operational amplifier is connected to the other end of the third capacitor and one end of the eighth resistor and grounded through the fifth capacitor; the other ends of the seventh resistor and the other ends of the eighth resistor are respectively connected to the input terminal and the output terminal of the semiconductor power device; and the output terminal of the third operational amplifier is connected to the other end of the twelfth resistor and the IO2 terminal of the first controller.

[0014] As a further embodiment of the present invention: the drive adjustment module includes a third resistor, a first resistor, a first power transistor, a first switching transistor, a second resistor, a second diode, and a second power transistor;

[0015] Preferably, the gate of the first power transistor is connected to the collector of the first switching transistor and connected to the second output terminal of the power supply device through a third resistor; the drain of the first power transistor is connected to the source of the second power transistor and the IO1 terminal of the first controller through a first resistor; the drain of the second power transistor is connected to the source of the first power transistor, the anode of the second diode and the output terminal of the semiconductor power device through a second resistor; the cathode of the second diode is connected to the gate of the second power transistor; the emitter of the first switching transistor is grounded; and the base of the first switching transistor is connected to the state judgment module.

[0016] As a further embodiment of the present invention: the drive adjustment module further includes a third power transistor, a fourth resistor, a first adjustable Zener diode, and a first diode;

[0017] Preferably, the source of the third power transistor is connected to the IO1 terminal of the first controller, the drain of the third power transistor is connected to the driving terminal of the semiconductor power device through the fourth resistor, the gate of the third power transistor is connected to the cathode of the first adjustable Zener diode, the anode of the first adjustable Zener diode is connected to the output terminal of the semiconductor power device, the control terminal of the first adjustable Zener diode is connected to the anode of the first diode and the status judgment module, and the cathode of the first diode is connected to the gate of the second power transistor.

[0018] As a further embodiment of the present invention: the state determination module includes a first comparator, a second comparator, a first reference power supply, a first analog switch, a first subtractor, a first power supply, a third diode, a first logic device, and a second logic device;

[0019] Preferably, the non-inverting input of the first comparator is connected to the inverting input of the second comparator, the output of the third operational amplifier, and the first and tenth terminals of the first analog switch. The inverter of the first comparator is connected to the first reference power supply, the non-inverting input of the second comparator, and the third and eighth terminals of the first analog switch. The fifth and twelfth terminals of the first analog switch are both connected to the output of the second comparator and the B terminal of the first logic unit. The sixth and thirteenth terminals of the second analog switch are both connected to the output of the first comparator and the B terminal of the second logic unit. The second and fourth terminals of the first analog switch are both connected to the first input of the first subtractor. The ninth and eleventh terminals of the first analog switch are both connected to the second input of the first subtractor. The output of the first subtractor is connected to the anode of the third diode, the A terminal of the first logic unit, and the A terminal of the second logic unit. The cathode of the third diode is connected to the first power supply. The Y terminal of the first logic unit is connected to the base of the first switching transistor. The Y terminal of the second logic unit is connected to the control terminal of the first adjustable Zener diode.

[0020] As a further embodiment of the present invention: the state determination module also includes a seventeenth resistor, a fourth diode, and a second switch;

[0021] Preferably, the cathode of the fourth diode is connected to the output terminal of the first subtractor through the seventeenth resistor, the anode of the fourth diode is connected to the base of the second switching transistor, the emitter of the second switching transistor is grounded, and the collector of the second switching transistor is connected to the driving terminal of the semiconductor power device.

[0022] Compared with the prior art, the beneficial effects of the present invention are as follows: The semiconductor power device drive adjustment circuit of the present invention can automatically adjust the pulse signal provided by the microcontroller module through the drive adjustment module to drive the semiconductor power device module to perform power regulation processing on the DC power input by the power supply module. The conduction detection module detects the conduction voltage of the semiconductor power device module. The state judgment module calculates the voltage difference between the set conduction voltage threshold and the detected conduction voltage to obtain the degree of decrease and increase of conduction voltage. Based on the degree of decrease and increase of voltage, the drive adjustment module is automatically controlled to adjust the drive degree, thereby adjusting the turn-on and turn-off time of the semiconductor power device, improving the control accuracy and drive efficiency of the semiconductor power device. When the degree of change of conduction voltage exceeds the set difference threshold, the semiconductor power device is controlled to stop working, improving circuit safety. Attached Figure Description

[0023] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 This is a schematic block diagram of a semiconductor power device drive regulation circuit provided in an embodiment of the present invention.

[0025] Figure 2 This is a circuit diagram of a semiconductor power device drive regulation circuit provided in an embodiment of the present invention.

[0026] Figure 3 The circuit diagram is provided for the state determination module in the embodiment of the present invention. Detailed Implementation

[0027] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0028] In one embodiment, see Figure 1A semiconductor power device drive regulation circuit includes: a power supply module 1, used to convert and regulate the input electrical energy and output DC power;

[0029] The microcontroller module 2 is connected to the continuity detection module 5 and is used to provide pulse signals and receive the continuity signals output by the continuity detection module 5.

[0030] The drive adjustment module 3 is connected to the microcontroller module 2, the status judgment module 6, the power supply module 1 and the semiconductor power device module 4. It is used to amplify and adjust the pulse signal and output the drive signal. When it receives the first adjustment signal or the second adjustment signal output by the status judgment module 6, it adjusts the voltage of the drive signal and adjusts the drive speed of the semiconductor power device module 4.

[0031] Semiconductor power device module 4, connected to power supply module 1, is used to perform power regulation processing on the input DC power and output the first power when a drive signal is received;

[0032] The continuity detection module 5 is connected to the semiconductor power device module 4 and is used to differentially amplify the DC power and the first power input to the semiconductor power device module 4 and output a continuity signal.

[0033] The state judgment module 6, connected to the conduction detection module 5, is used to set the conduction voltage threshold. When the voltage of the conduction signal is greater than the conduction voltage threshold, the conduction signal and the conduction voltage threshold are subtracted and clamped, and a first adjustment signal is output. When the voltage of the conduction signal is less than the conduction voltage threshold, the conduction voltage threshold and the conduction signal are subtracted and clamped, and a second adjustment signal is output. When either the first adjustment signal or the second adjustment signal is greater than the set difference threshold, the semiconductor power device module 4 is controlled to stop receiving the drive signal.

[0034] In a specific embodiment, the power module 1 can be a power circuit composed of a power supply device, which can perform AC-DC conversion and voltage regulation of the input electrical energy and output DC power; the microcontroller module 2 can be a microcontroller circuit composed of a single-chip microcomputer, which integrates many components such as an arithmetic unit, a controller, a memory, and input / output devices to realize functions such as signal processing, data storage, module control, and timing control; the drive regulation module 3 can be a drive regulation circuit composed of field-effect transistors, resistors, and adjustable Zener diodes, which can automatically regulate the voltage of the input signal, or can be controlled by the state judgment module 6 to control the degree of voltage regulation; the semiconductor power device module 4 can be a semiconductor power device circuit composed of capacitors, resistors, and semiconductor power devices to perform power regulation of the input electrical energy; the continuity detection module 5 can be a circuit composed of resistors, capacitors, and... The conduction detection circuit, composed of an amplifier, can differentially amplify the electrical energy input to the semiconductor power device module 4 and the electrical energy output from the semiconductor power device module 4 to obtain the conduction voltage of the semiconductor power device module 4, i.e., the conduction signal. The aforementioned state judgment module 6 can be a state judgment circuit composed of comparators, analog switches, subtractors, transistors, etc. It can set the conduction voltage threshold and the difference threshold. The conduction voltage threshold is the conduction voltage of the semiconductor power device in the semiconductor power device module 4, and the difference threshold is the maximum allowable conduction voltage change. By using the conduction voltage threshold and the voltage magnitude of the conduction signal, the voltage difference between the conduction voltage threshold and the conduction signal is calculated. The driving degree of the drive adjustment module 3 is adjusted according to the voltage difference, and the safety of the voltage difference is judged and the semiconductor power device module 4 is stopped from working according to the difference threshold.

[0035] In another embodiment, please refer to Figure 1 , Figure 2 and Figure 3 The power module 1 includes a power supply device; the semiconductor power device module 4 includes a sixth resistor R6, a fifth resistor R5, a second capacitor C2, a first capacitor C1, a ninth resistor R9, and a semiconductor power device.

[0036] Specifically, the first output terminal of the power supply device is connected to one end of the fifth resistor R5 and the input terminal of the semiconductor power device through the sixth resistor R6. The other end of the fifth capacitor C5 is connected to the first end of the first capacitor C1 and the driving terminal of the semiconductor power device through the second capacitor C2. The output terminal of the semiconductor power device is connected to the second end of the first capacitor C1 and connected to the ground terminal and ground terminal of the power supply device through the ninth resistor R9.

[0037] In a specific embodiment, the power supply device may consist of an AC-DC converter and a multiplexer; the semiconductor power device may be an IGBT; and the sixth resistor R6 and the ninth resistor R9 may be used as loads.

[0038] Furthermore, the continuity detection module 5 includes a seventh resistor R7, an eighth resistor R8, a third capacitor C3, a fourth capacitor C4, a fifth capacitor C5, a first operational amplifier OP1, a second operational amplifier OP2, a tenth resistor R10, an eleventh resistor R11, a twelfth resistor R12, a thirteenth resistor R13, a fourteenth resistor R14, a fifteenth resistor R15, a sixteenth resistor R16, and a third operational amplifier OP3; the microcontroller module 2 includes a first controller U1;

[0039] Specifically, the non-inverting input of the first operational amplifier OP1 is connected to one end of the third capacitor C3 and one end of the seventh resistor R7, and grounded through the fourth capacitor C4. The inverting input of the first operational amplifier OP1 is connected to one end of the tenth resistor R10, and then connected to the inverting input of the second operational amplifier OP2 and one end of the fourteenth resistor R14 through the thirteenth resistor R13. The other end of the tenth resistor R10 is connected to the output terminal of the first operational amplifier OP1, and then connected to one end of the twelfth resistor R12 through the eleventh resistor R11 and the non-inverting input of the third operational amplifier OP3. The inverting input of the third operational amplifier OP3 is connected to the fifteenth resistor R12. One end of resistor R15 is grounded through the sixteenth resistor R16. The other end of the fifteenth resistor R15 is connected to the output of the second operational amplifier OP2 and the other end of the fourteenth resistor R14. The non-inverting input of the second operational amplifier OP2 is connected to the other end of the third capacitor C3 and one end of the eighth resistor R8, and grounded through the fifth capacitor C5. The other ends of the seventh resistor R7 and the other ends of the eighth resistor R8 are connected to the input and output of the semiconductor power device, respectively. The output of the third operational amplifier OP3 is connected to the other end of the twelfth resistor R12 and the IO2 terminal of the first controller U1.

[0040] In a specific embodiment, the first operational amplifier OP1, the second operational amplifier OP2, and the third operational amplifier OP3 can all be selected from OP07 operational amplifiers.

[0041] Furthermore, the drive adjustment module 3 includes a third resistor R3, a first resistor R1, a first power transistor Q1, a first switching transistor V1, a second resistor R2, a second diode D2, and a second power transistor Q2;

[0042] Specifically, the gate of the first power transistor Q1 is connected to the collector of the first switching transistor V1 and connected to the second output terminal of the power supply device through the third resistor R3. The drain of the first power transistor Q1 is connected to the source of the second power transistor Q2 and the IO1 terminal of the first controller U1 through the first resistor R1. The drain of the second power transistor Q2 is connected to the source of the first power transistor Q1, the anode of the second diode D2 and the output terminal of the semiconductor power device through the second resistor R2. The cathode of the second diode D2 is connected to the gate of the second power transistor Q2. The emitter of the first switching transistor V1 is grounded and the base of the first switching transistor V1 is connected to the state judgment module 6.

[0043] In a specific embodiment, the first power transistor Q1 can be an N-channel MOSFET, which, together with the first resistor R1, can control the semiconductor power device module 4 to perform slow turn-on control; the second power transistor Q2 can be a P-channel MOSFET, which, together with the second resistor R2, can perform fast turn-on control; and the first switching transistor V1 can be an NPN transistor.

[0044] Furthermore, the drive adjustment module 3 also includes a third power transistor Q3, a fourth resistor R4, a first adjustable Zener diode U2, and a first diode D1;

[0045] Specifically, the source of the third power transistor Q3 is connected to the IO1 terminal of the first controller U1, the drain of the third power transistor Q3 is connected to the driving terminal of the semiconductor power device through the fourth resistor R4, the gate of the third power transistor Q3 is connected to the cathode of the first adjustable Zener diode U2, the anode of the first adjustable Zener diode U2 is connected to the output terminal of the semiconductor power device, the control terminal of the first adjustable Zener diode U2 is connected to the anode of the first diode D1 and the status judgment module 6, and the cathode of the first diode D1 is connected to the gate of the second power transistor Q2.

[0046] In a specific embodiment, the third power transistor Q3 can be a P-channel MOSFET; the first adjustable Zener diode U2 can be a TL431 Zener diode.

[0047] Furthermore, the state determination module 6 includes a first comparator A1, a second comparator A2, a first reference power supply VREF, a first analog switch U3, a first subtractor, a first power supply VCC1, a third diode D3, a first logic device J1, and a second logic device J2.

[0048] Specifically, the non-inverting input of the first comparator A1 is connected to the inverting input of the second comparator A2, the output of the third operational amplifier OP3, and the first and tenth terminals of the first analog switch U3. The inverter of the first comparator A1 is connected to the first reference power supply VREF, the non-inverting input of the second comparator A2, and the third and eighth terminals of the first analog switch U3. The fifth and twelfth terminals of the first analog switch U3 are both connected to the output of the second comparator A2 and the B terminal of the first logic unit J1. The sixth and thirteenth terminals of the second analog switch are both connected to the output of the first comparator A1 and the second... The B terminal of logic device J2, the second and fourth terminals of the first analog switch U3 are both connected to the first input terminal of the first subtractor, the ninth and eleventh terminals of the first analog switch U3 are both connected to the second input terminal of the first subtractor, the output terminal of the first subtractor is connected to the anode of the third diode D3, the A terminal of the first logic device J1 and the A terminal of the second logic device J2, the cathode of the third diode D3 is connected to the first power supply VCC1, the Y terminal of the first logic device J1 is connected to the base of the first switching transistor V1, and the Y terminal of the second logic device J2 is connected to the control terminal of the first adjustable Zener diode U2.

[0049] In a specific embodiment, the first reference power supply VREF provides the turn-on voltage threshold; both the first comparator A1 and the second comparator A2 can be LM358 comparators; the first analog switch U3 can be a CD4066 chip; the first subtractor can be composed of an operational amplifier and a resistor, and performs subtraction on the voltages of the first input terminal and the second input terminal; both the first logic unit J1 and the second logic unit J2 can be AND gate chips.

[0050] Furthermore, the status judgment module 6 also includes a seventeenth resistor R17, a fourth diode D4, and a second switch V2;

[0051] Specifically, the cathode of the fourth diode D4 is connected to the output terminal of the first subtractor through the seventeenth resistor R17, the anode of the fourth diode D4 is connected to the base of the second switching transistor V2, the emitter of the second switching transistor V2 is grounded, and the collector of the second switching transistor V2 is connected to the driving terminal of the semiconductor power device.

[0052] In a specific embodiment, the seventeenth resistor R17 and the fourth diode D4 are set to a difference threshold; the second switch V2 can be an NPN transistor.

[0053] In this embodiment, a semiconductor power device drive regulation circuit provides a pulse signal from the IO1 terminal of the first controller U1. The power supply device triggers the first power transistor Q1 to conduct through the third resistor R3. When the voltage of the pulse signal is lower than the sum of the forward voltage of the second diode D2 and the gate voltage of the second power transistor Q2, the pulse signal is processed by the first power transistor Q1 and the first resistor R1 and outputs a drive signal. When the voltage of the pulse signal is greater than the sum of the forward voltage of the second diode D2 and the gate voltage of the second power transistor Q2, the second power transistor Q2 conducts, causing the pulse signal to be processed by the first resistor R1, the second power transistor Q2, the second resistor R2, and the first power transistor Q1 and output as a drive signal. The drive signal turns on the semiconductor power device. The DC power supplied by the power supply is regulated by the semiconductor power device. Simultaneously, the first operational amplifier OP1, the second operational amplifier OP2, the third operational amplifier OP3, the seventh resistor R7, the eighth resistor R8, the third capacitor C3, the fourth capacitor C4, the fifth capacitor C5, the tenth resistor R10, the eleventh resistor R11, the twelfth resistor R12, the thirteenth resistor R13, the fourteenth resistor R14, the fifteenth resistor R15, and the sixteenth resistor R16 differentially amplify the voltage at the input and output terminals of the semiconductor power device. The third operational amplifier OP3 outputs a turn-on voltage, i.e., a turn-on signal, which is greater than the voltage at the first operational amplifier OP1. When the reference power supply VREF sets the on-voltage threshold, the first comparator A1 controls the sixth and thirteenth terminals of the first analog switch U3 and the B terminal of the second logic unit J2 to become high. The first analog switch U3 transmits the on-voltage signal and the on-voltage threshold to the first subtractor for subtraction. After being clamped by the first power supply VCC1 and the third diode D3, the Y terminal of the second logic unit J2 outputs the first adjustment signal, which then adjusts the on-state of the first adjustable Zener diode U2, controls the third power transistor Q3 to turn on, and controls the second power transistor Q2 to turn off. This, together with the fourth resistor R4, the first resistor R1, and the first power transistor Q1, improves the driving capability of the drive signal. Similarly, when the on-voltage threshold is less than the on-voltage threshold, the first comparator A1 controls the sixth and thirteenth terminals of the first analog switch U3 and the B terminal of the second logic unit J2 to become high. When the on-voltage threshold is reached, the first analog switch U3 transmits the on-signal and the on-voltage threshold to the second and first input terminals of the first subtractor, respectively. After subtraction and clamping, the first logic unit J1 triggers the first switch V1 to turn on, reducing the conduction level of the first power transistor Q1 and increasing the resistance of the first power transistor Q1, thereby reducing the driving capability of the drive signal to maintain the driving stability and driving accuracy of the semiconductor power device by the first controller U1. When the signal output by the first subtractor is greater than the difference threshold set by the seventeenth resistor R17 and the fourth diode D4, the second switch V2 turns on, pulling down the driving terminal voltage of the semiconductor power device and controlling the semiconductor power device to stop working.

[0054] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the present invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0055] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A semiconductor power device drive regulation circuit, characterized in that, The circuit includes: The power module is used to convert and regulate the incoming electrical energy and output DC power. The microcontroller module, connected to the continuity detection module, is used to provide pulse signals and receive the continuity signal output by the continuity detection module; The drive adjustment module is connected to the microcontroller module, the status judgment module, the power supply module and the semiconductor power device module. It is used to amplify and adjust the pulse signal and output the drive signal. When it receives the first adjustment signal or the second adjustment signal output by the status judgment module, it adjusts the voltage of the drive signal and adjusts the drive speed of the semiconductor power device module. A semiconductor power device module, connected to a power supply module, is used to perform power regulation on the input DC power and output the first power when a drive signal is received. The continuity detection module is connected to the semiconductor power device module and is used to differentially amplify the DC power and the first power input to the semiconductor power device module and output a continuity signal. The status judgment module, connected to the conduction detection module, is used to set the conduction voltage threshold. When the voltage of the conduction signal is greater than the conduction voltage threshold, the conduction signal and the conduction voltage threshold are subtracted and clamped, and a first adjustment signal is output. When the voltage of the conduction signal is less than the conduction voltage threshold, the conduction voltage threshold and the conduction signal are subtracted and clamped, and a second adjustment signal is output. When either the first adjustment signal or the second adjustment signal is greater than the set difference threshold, the semiconductor power device module is controlled to stop receiving drive signals.

2. The semiconductor power device drive regulation circuit according to claim 1, characterized in that, The power module includes a power supply device; the semiconductor power device module includes a sixth resistor, a fifth resistor, a second capacitor, a first capacitor, a ninth resistor, and a semiconductor power device. The first output terminal of the power supply device is connected to one end of the fifth resistor and the input terminal of the semiconductor power device through the sixth resistor. The other end of the fifth resistor is connected to the first end of the first capacitor and the driving terminal of the semiconductor power device through the second capacitor. The output terminal of the semiconductor power device is connected to the second end of the first capacitor and is connected to the ground terminal and ground terminal of the power supply device through the ninth resistor.

3. The semiconductor power device drive regulation circuit according to claim 2, characterized in that, The continuity detection module includes a seventh resistor, an eighth resistor, a third capacitor, a fourth capacitor, a fifth capacitor, a first operational amplifier, a second operational amplifier, a tenth resistor, an eleventh resistor, a twelfth resistor, a thirteenth resistor, a fourteenth resistor, a fifteenth resistor, a sixteenth resistor, and a third operational amplifier; the microcontroller module includes a first controller; The non-inverting input of the first operational amplifier is connected to one end of the third capacitor and one end of the seventh resistor, and grounded through the fourth capacitor. The inverting input of the first operational amplifier is connected to one end of the tenth resistor, and connected to the inverting input of the second operational amplifier and one end of the fourteenth resistor through the thirteenth resistor. The other end of the tenth resistor is connected to the output terminal of the first operational amplifier, and connected to one end of the twelfth resistor and the non-inverting input of the third operational amplifier through the eleventh resistor. The inverting input of the third operational amplifier is connected to one end of the fifteenth resistor and grounded through the sixteenth resistor. The other end of the fifteenth resistor is connected to the output terminal of the second operational amplifier and the other end of the fourteenth resistor. The non-inverting input of the second operational amplifier is connected to the other end of the third capacitor and one end of the eighth resistor, and grounded through the fifth capacitor. The other ends of the seventh resistor and the other ends of the eighth resistor are respectively connected to the input terminal and the output terminal of the semiconductor power device. The output terminal of the third operational amplifier is connected to the other end of the twelfth resistor and the IO2 terminal of the first controller.

4. The semiconductor power device drive regulation circuit according to claim 3, characterized in that, The drive adjustment module includes a third resistor, a first resistor, a first power transistor, a first switching transistor, a second resistor, a second diode, and a second power transistor. The gate of the first power transistor is connected to the collector of the first switching transistor and connected to the second output terminal of the power supply device through a third resistor. The drain of the first power transistor is connected to the source of the second power transistor and the IO1 terminal of the first controller through a first resistor. The drain of the second power transistor is connected to the source of the first power transistor, the anode of the second diode and the output terminal of the semiconductor power device through a second resistor. The cathode of the second diode is connected to the gate of the second power transistor. The emitter of the first switching transistor is grounded. The base of the first switching transistor is connected to the status judgment module.

5. A semiconductor power device drive regulation circuit according to claim 4, characterized in that, The drive adjustment module also includes a third power transistor, a fourth resistor, a first adjustable Zener diode, and a first diode; The source of the third power transistor is connected to the IO1 terminal of the first controller, the drain of the third power transistor is connected to the driving terminal of the semiconductor power device through the fourth resistor, the gate of the third power transistor is connected to the cathode of the first adjustable Zener diode, the anode of the first adjustable Zener diode is connected to the output terminal of the semiconductor power device, the control terminal of the first adjustable Zener diode is connected to the anode of the first diode and the status judgment module, and the cathode of the first diode is connected to the gate of the second power transistor.

6. The semiconductor power device drive regulation circuit according to claim 5, characterized in that, The state determination module includes a first comparator, a second comparator, a first reference power supply, a first analog switch, a first subtractor, a first power supply, a third diode, a first logic unit, and a second logic unit. The non-inverting input of the first comparator is connected to the inverting input of the second comparator, the output of the third operational amplifier, and the first and tenth terminals of the first analog switch. The inverting input of the first comparator is connected to the first reference power supply, the non-inverting input of the second comparator, and the third and eighth terminals of the first analog switch. The fifth and twelfth terminals of the first analog switch are both connected to the output of the second comparator and the B terminal of the first logic unit. The sixth and thirteenth terminals of the first analog switch are both connected to the output of the first comparator and the B terminal of the second logic unit. The second and fourth terminals of the first analog switch are both connected to the first input of the first subtractor. The ninth and eleventh terminals of the first analog switch are both connected to the second input of the first subtractor. The output of the first subtractor is connected to the anode of the third diode, the A terminal of the first logic unit, and the A terminal of the second logic unit. The cathode of the third diode is connected to the first power supply. The Y terminal of the first logic unit is connected to the base of the first switching transistor. The Y terminal of the second logic unit is connected to the control terminal of the first adjustable Zener diode.

7. A semiconductor power device drive regulation circuit according to claim 6, characterized in that, The status determination module also includes a seventeenth resistor, a fourth diode, and a second switching transistor; The cathode of the fourth diode is connected to the output terminal of the first subtractor through the seventeenth resistor. The anode of the fourth diode is connected to the base of the second switching transistor. The emitter of the second switching transistor is grounded. The collector of the second switching transistor is connected to the driving terminal of the semiconductor power device.

Images