Hybrid switch multi-chip power module for vehicle battery

Abstract

A hybrid switch multi-chip power module for a vehicle battery is provided. A system and method for receiving a plurality of electronic control signals at a multi-chip power module through one or more semiconductor devices of a first device type configured in parallel with one or more semiconductor devices of a second device type. The one or more semiconductor devices of the first device type and the one or more semiconductor devices of the second device type form a plurality of functional switches. The function switch independently changes state in response to a plurality of electronic control signals. The one or more semiconductor devices of the first device type are configured to be electrically controlled for independent use and decoupled with the one or more semiconductor devices of the second device type, or used in parallel with the one or more semiconductor devices of the second device type.

Description

Technical Field

[0001] Vehicles are rapidly integrating more and more technological components into their systems, particularly in the area of ​​hybrid electric vehicles and battery-based electric vehicles (EVs). EVs are becoming increasingly popular as an environmentally friendly alternative to traditional gasoline-powered vehicles. However, one of the challenges associated with EVs is the need for efficient, reliable, and manufacturable battery systems. Background Art

[0002] In the context of electric vehicles, an inverter may be used to convert direct current (DC) power from the vehicle's battery into alternating current (AC), which may be used to power the electric motor that drives the vehicle. Furthermore, based on the current required by the motor for a particular driving scenario (e.g., acceleration or speed), a particular type of power module within the inverter may be more efficient at lower current draws relative to higher current draws, whereas another type of power module within the inverter may be more efficient at higher current draws relative to lower current draws. Summary of the Invention

[0003] Disclosed herein are systems and methods for controlling a power inverter in a vehicle. The power inverter in the vehicle may include a single multi-chip power module having one or more semiconductor devices of a first device type and one or more semiconductor devices of a second device type. The one or more semiconductor devices of the first device type and the one or more semiconductor devices of the second device type may be aligned in parallel. Furthermore, the one or more semiconductor devices of the first device type and the one or more semiconductor devices of the second device type may form a plurality of functional switches, wherein each functional switch may be under independent electrical control. The one or more semiconductor devices of the first device type may also be electrically controlled to be used independently and decoupled from the one or more semiconductor devices of the second device type, or to be used in parallel with the one or more semiconductor devices of the second device type.

[0004] Another aspect of the system can include a first device type comprising silicon-type devices, and a second device type comprising wide bandgap (WBG) devices.

[0005] Another aspect of the system may include one or more semiconductor devices of a first device type and one or more semiconductor devices of a second device type in a half-bridge configuration.

[0006] Another aspect of the system may include a half-bridge configuration having two or four independent semiconductor functional switches.

[0007] Another aspect of the system may include one or more semiconductor devices of a first device type and one or more semiconductor devices of a second device type in a six-package module configuration.

[0008] Another aspect of the system may include a six-package module configuration having six or twelve independent semiconductor functional switches.

[0009] Another aspect of the system may include a silicon-type device having a silicon (Si) metal oxide semiconductor field effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), or a reverse current IGBT (RC-IGBT).

[0010] Another aspect of the system may include a WBG device having a silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), a reverse current IGBT, or a gallium nitride semiconductor.

[0011] Another aspect of the system may include each of the plurality of functional switches under independent control driven by a pulse width modulated signal.

[0012] Another aspect of the system may also include two independently separated gate collector / drain, emitter / source pins for the first device type and two independently separated gate collector / drain, emitter / source pins for the second device type.

[0013] Another aspect of the system can include two independently separated gate collector / drain, emitter / source pins for a first device type having a first applied voltage and current that is different than a second applied voltage and current for two independently separated gate collector / drain, emitter / source pins for a second device type.

[0014] Another aspect of the system may include a first device type and a second device type formed on the same power module substrate.

[0015] Another aspect of the present disclosure may include a method for controlling a power inverter in a vehicle. The method may include receiving multiple sets of electronic control signals at a multi-chip power module, wherein the multi-chip power module may include one or more semiconductor devices of a first device type, which may be aligned in parallel with one or more semiconductor devices of a second device type. In addition, the one or more semiconductor devices of the first device type and the one or more semiconductor devices of the second device type may form a plurality of functional switches. The method may also include independently switching the state of one or more of the plurality of functional switches in response to the multiple sets of electronic control signals, wherein the one or more semiconductor devices of the first device type may be electrically controlled to be used independently and decoupled from the one or more semiconductor devices of the second device type, or to be used in parallel and synchronously with the one or more semiconductor devices of the second device type.

[0016] Another aspect of the method can include a first device type having a silicon-type device, and a second device type comprising a wide bandgap (WBG) device.

[0017] Another aspect of the method may include one or more semiconductor devices of a first device type and one or more semiconductor devices of a second device type having a half-bridge configuration.

[0018] Another aspect of the method may include multiple sets of electronic control signals having one or more pulse width modulated signals.

[0019] Another aspect of the method can include the first device type further having two independently separated gate collector / drain, emitter / source pins, and the second device type further having two independently separated gate collector / drain, emitter / source pins.

[0020] Another aspect of the method may include applying a first voltage and current to two independently separated gate emitter / source pins for a first device type, and applying a second voltage and current to two independently separated gate emitter / source pins for a second device type.

[0021] Another aspect of the method can include forming the first device type and the second device type on the same power module substrate.

[0022] Another aspect of the present disclosure may include a system for controlling a power inverter in a vehicle, the system comprising a single multi-chip power module. The single multi-chip power module may include one or more semiconductor devices of a first device type, wherein the first device type may include a silicon-type device, wherein the silicon-type device may also include a silicon (Si) metal oxide semiconductor field effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), a reverse current IGBT, or a junction field effect transistor (JFET). The system may also include one or more semiconductor devices of a second device type, wherein the second device type may include a wide bandgap (WBG) device, wherein the WBG device may include a silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), a reverse current IGBT, a JFET, or a gallium nitride semiconductor. The system may also include two independently separated gate collector / drain, emitter / source pins for the first device type and two independently separated gate collector / drain, emitter / source pins for the second device type, wherein the two independently separated gate collector / drain, emitter / source pins for the first device type may have a first applied voltage that is different from a second applied voltage of the two independently separated gate collector / drain, emitter / source pins for the second device type. Furthermore, one or more semiconductor devices of the first device type and one or more semiconductor devices of the second device type may be aligned in parallel, wherein the one or more semiconductor devices of the first device type and the one or more semiconductor devices of the second device type may form a plurality of functional switches, wherein each of the plurality of functional switches is under independent electrical control. Furthermore, the one or more semiconductor devices of the first device type may be electrically controlled to be used independently and decoupled from the one or more semiconductor devices of the second device type, or to be used in parallel and synchronously with the one or more semiconductor devices of the second device type. The system may also include a device wherein the first device type and the second device type are formed on the same power module substrate.

[0023] The following options are provided:

[0024] 1. A system for controlling a power inverter in a vehicle, comprising:

[0025] A single multi-chip power module, including:

[0026] one or more semiconductor devices of a first device type; and

[0027] one or more semiconductor devices of a second device type;

[0028] wherein one or more semiconductor devices of a first device type and one or more semiconductor devices of a second device type are arranged in parallel,

[0029] wherein the one or more semiconductor devices of the first device type and the one or more semiconductor devices of the second device type are configured to form a plurality of functional switches, wherein each functional switch of the plurality of functional switches is under independent electrical control; and

[0030] One or more semiconductor devices of a first device type are configured to be electrically controlled to be used independently and decoupled from one or more semiconductor devices of a second device type, or to be used in parallel with one or more semiconductor devices of the second device type.

[0031] 2. The system of claim 1 , wherein the first device type comprises silicon-type devices and the second device type comprises wide bandgap (WBG) devices.

[0032] 3. The system of claim 1 , wherein the one or more semiconductor devices of the first device type and the one or more semiconductor devices of the second device type comprise a half-bridge configuration.

[0033] 4. The system of claim 1 , wherein the first device type comprises a first type of wide bandgap (WBG) device, and the second device type comprises a second type of WBG device.

[0034] 5. The system of claim 1 , wherein the one or more semiconductor devices of the first device type and the one or more semiconductor devices of the second device type comprise a six-package module configuration.

[0035] 6. The system of claim 5, wherein the six-package module configuration includes independent semiconductor functional switches.

[0036] 7. The system according to claim 2, wherein the silicon-type device comprises a silicon (Si) metal oxide semiconductor field effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), or a reverse current IGBT.

[0037] 8. The system of claim 2, wherein the WBG device comprises a silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), a reverse current IGBT, a SiC junction field effect transistor (JFET), or a gallium nitride semiconductor.

[0038] 9. The system according to claim 1, wherein each of the plurality of functional switches under independent control is configured to be driven by a pulse width modulation signal.

[0039] 10. The system of claim 1 further comprising two independently separated gate collector / drain, emitter / source pins for the first device type and two independently separated gate collector / drain, emitter / source pins for the second device type.

[0040] 11. A system according to claim 10, wherein two independently separated gate collector / drain, emitter / source pins for a first device type are configured for a first applied voltage, which is different from a second applied voltage of two independently separated gate collector / drain, emitter / source pins for a second device type.

[0041] 12. The system of claim 1, wherein the first device type and the second device type are formed on a same power module substrate.

[0042] 13. A method for controlling a power inverter in a vehicle, comprising:

[0043] receiving a plurality of electronic control signals at a multi-chip power module, wherein the multi-chip power module includes one or more semiconductor devices of a first device type configured in parallel with one or more semiconductor devices of a second device type, wherein the one or more semiconductor devices of the first device type and the one or more semiconductor devices of the second device type are configured to form a plurality of functional switches; and

[0044] In response to a plurality of electronic control signals, the states of one or more of the plurality of functional switches are independently switched, wherein the one or more semiconductor devices of the first device type are configured to be electrically controlled to be used independently and decoupled from one or more semiconductor devices of the second device type, or to be used in parallel with one or more semiconductor devices of the second device type.

[0045] 14. The method of claim 13, wherein the first device type comprises a first type of wide bandgap (WBG) device, and the second device type comprises a second type of WBG device.

[0046] 15. The method of clause 13, wherein the one or more semiconductor devices of the first device type and the one or more semiconductor devices of the second device type comprise a half-bridge configuration.

[0047] 16. The method of claim 13, wherein the plurality of electronic control signals comprises one or more pulse width modulated signals.

[0048] 17. The method of claim 13, wherein the first device type further comprises two independently separated gate collector / drain, emitter / source pins, and the second device type further comprises two independently separated gate collector / drain, emitter / source pins.

[0049] 18. The method of claim 17, further comprising applying a first voltage to two independently separated gate emitter / source pins for the first device type, and applying a second voltage to two independently separated gate emitter / source pins for the second device type.

[0050] 19. The method of claim 13, further comprising forming the first device type and the second device type on the same power module substrate.

[0051] 20. A system for controlling a power inverter in a vehicle, comprising:

[0052] A single multi-chip power module, including:

[0053] one or more semiconductor devices of a first device type, wherein the first device type comprises silicon-type devices, and wherein the silicon-type devices comprise silicon (Si) metal oxide semiconductor field effect transistors (MOSFETs), insulated gate bipolar transistors (IGBTs), reverse current IGBTs, or junction field effect transistors (JFETs);

[0054] one or more semiconductor devices of a second device type, wherein the second device type comprises a wide bandgap (WBG) device, and wherein the WBG device comprises a silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), a reverse current IGBT, a JFET, or a gallium nitride semiconductor; and

[0055] two independently separated gate collector / drain, emitter / source pins for a first device type and two independently separated gate collector / drain, emitter / source pins for a second device type, wherein the two independently separated gate collector / drain, emitter / source pins for the first device type are configured for a first applied voltage that is different than a second applied voltage of the two independently separated gate collector / drain, emitter / source pins for the second device type;

[0056] wherein one or more semiconductor devices of a first device type and one or more semiconductor devices of a second device type are configured in parallel;

[0057] wherein the one or more semiconductor devices of the first device type and the one or more semiconductor devices of the second device type are configured to form a plurality of functional switches, wherein each of the plurality of functional switches is under independent electrical control;

[0058] wherein the one or more semiconductor devices of the first device type are configured to be electrically controlled to be used independently and decoupled from the one or more semiconductor devices of the second device type, or to be used in parallel and synchronously with the one or more semiconductor devices of the second device type; and

[0059] The first device type and the second device type are formed on the same power module substrate.

[0060] The above features and advantages of the present disclosure and other features and attendant advantages will be readily apparent from the following detailed description of illustrative examples and modes for implementing the present disclosure when taken in conjunction with the accompanying drawings and the appended claims. In addition, the present disclosure explicitly encompasses combinations and sub-combinations of the elements and features presented above and below. BRIEF DESCRIPTION OF THE DRAWINGS

[0061] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of the present disclosure.

[0062] Figure 1 is a graphical representation of on-state voltage and current loss characteristics in a vehicle inverter according to the present disclosure.

[0063] Figure 2A is a diagram of a microchannel plate inverter according to the present disclosure.

[0064] Figure 2B is a diagram of an embodiment of a possible Mosfet and Si IGBT combination inverter according to the present disclosure.

[0065] Figure 3 is a diagram of a multi-chip power module according to the present disclosure.

[0066] Figure 4 is a schematic design of a multi-chip power module with an example pulse-width modulated input signal according to the present disclosure.

[0067] Figure 5A 、 5B 5C and 5D show various power module substrate designs with non-uniform layers according to the present disclosure.

[0068] Figure 6 is a diagram of a sintering process for a power module having multiple zones according to the present disclosure.

[0069] Figure 7A and 7B is a diagram of a multi-chip power module with a temperature sensor according to the present disclosure.

[0070] Figure 8A is a diagram of a sandwich-cooled multi-chip power module according to the present disclosure.

[0071] Figure 8B is an illustration of a sandwich-cooled multi-chip power module with outstanding optimized loop inductance according to the present disclosure.

[0072] Figure 9A and 9B is a diagram of a multi-chip dual-substrate power module according to the present disclosure.

[0073] Figure 10 is a diagram of a power module with an integrated resistor-capacitor snubber according to the present disclosure.

[0074] Figure 11 is a flow chart of a method for controlling a vehicle power inverter according to the present disclosure.

[0075] The accompanying drawings are not necessarily to scale and may present somewhat simplified representations of various preferred features of the present disclosure disclosed herein, including, for example, specific dimensions, orientations, locations, and shapes. The details associated with these features will be determined in part by the specific intended application and use environment. DETAILED DESCRIPTION

[0076] The present disclosure is susceptible of many different forms of embodiment. Representative examples of the present disclosure are shown in the accompanying drawings and are described in detail herein as non-limiting examples of the disclosed principles. Therefore, elements and limitations described in the Abstract, Introduction, Summary, and Detailed Description sections but not explicitly recited in the claims should not be incorporated, individually or collectively, into the claims by implication, inference, or otherwise.

[0077] For the purposes of this description, unless otherwise stated, the use of the singular includes the plural, and vice versa, the terms "and" and "or" shall be both conjunctions and disjunctions, and the words "including," "comprising," "containing," "having," and the like shall mean "including but not limited to." In addition, approximate words, such as "approximately," "almost," "substantially," "generally," "approximately," and the like, may be used herein to mean "at, approximately, or approximately at," or "within 0-5% of..." or "within acceptable manufacturing tolerances," or logical combinations thereof. As used herein, a component that is "configured to" perform a specified function is capable of performing the specified function without change, not merely having the potential to perform the specified function after further modification. In other words, the described hardware, when expressly configured to perform a specified function, is specifically selected, created, implemented, utilized, programmed, and / or designed for the purpose of performing the specified function.

[0078] With reference to the figures, the left-most digit(s) of a reference number identifies the figure in which the reference number first appears (eg, the reference number '310' indicates that the element so numbered appears in the figure). Figure 3Additionally, elements having the same reference numeral followed by a different alphabetical letter or other distinguishing mark (e.g., an apostrophe) indicate elements that may be identical in structure, operation, or form but may be identified as repeating at different locations in space or at different points in time (e.g., reference numerals “110 a” and “110 b” may indicate two different input devices that may be functionally identical but may be located at different points in the simulated venue).

[0079] Figure 1 100 is a graphical representation of conduction losses for semiconductor types according to an embodiment of the present disclosure. At a given current conducted through the device, a voltage drop is observed across the device, where the power dissipated in the device is the voltage multiplied by the current. The lower the voltage drop at a given current, the more efficient the device.

[0080] For example, line 110 may represent the performance of an inverter using silicon (Si) devices such as Si MOSFETs, IGBTs, RC-IGBTs, etc. Line 120 may represent the performance of an inverter using wide bandgap devices such as SiC MOSFETs / IGBTs / RC-IGBTs, gallium nitride high electron mobility transistors (GaN HEMTs), as well as series or cascade devices, vertical gallium nitride (GaN), gallium oxide (GaO), etc.

[0081] Figure 1 It is shown that wide bandgap devices may be more efficient at lower currents, in this example currents from 0 to about 90 amps, while Si devices may be more efficient at higher currents, in this example currents greater than about 90 amps. In many embodiments, the present disclosure relates to utilizing two or more different devices, such as Si and / or wide bandgap devices, which can be operated together in parallel or decoupled and operated independently. This approach can allow the unique efficiency advantages of wide bandgap devices to be utilized in an operating region where they may be more efficient under a predetermined mission profile, and allow the remainder of the operating region to be covered by another type of device (e.g., Si). This approach can provide improved efficiency of wide bandgap devices relative to the use of all-silicon based devices to increase the fuel economy of electric vehicles.

[0082] According to an embodiment of the present disclosure, Figure 2A The concept of a single semiconductor inverter device is also shown, and Figure 2B The concept of a dual semiconductor inverter device type is shown. Figure 2A A single type of device may be included, such as a plurality of wide bandgap devices, such as SiC MOSFET devices 205 - 1 , 205 - 2 , 205 - 3 , and 205 - 4 . Figure 2BTwo device types within a single multi-chip power module are shown, such as a first device type (eg, wide bandgap SiC MOSFET devices 210 - 1 and 210 - 2 ), and a second device type (eg, Si-type Si IGBT devices 215 - 1 and 215 - 2 ).

[0083] A multi-chip power module can include two or more dies of the same or different types that can be packaged within a single power module to form a discrete, half-bridge, or 6-pack configuration. Furthermore, a multi-chip power module can include two separate gate collector / drain, emitter / source pins for each device type, where the power module can encompass two or four switches (also called functional switches) in a half-bridge, or six or twelve switches in a 6-pack configuration. The functional switch can then drive the device's state from on to off or from off to on.

[0084] Figure 3 FIG3 shows a multi-chip power module 300 according to an embodiment of the present disclosure. The multi-chip power module 300 may include a housing 310, which also includes a plurality of semiconductor devices, which may also be of different device types. For example, device 315 and device 320 may be wide bandgap devices, while device 325 and device 330 may be Si-type devices. Device 315 and device 330 may also be referred to as "low-side" devices, while device 320 and device 325 may be referred to as "high-side" devices, such as Figure 4 Schematically shown in FIG. Power module 300 may also include separate Kelvin pins for each device type. For example, pin 350 may be connected to devices 315, 320, 325, and 330 as follows:

[0085] • Pin 350-1 can be connected to the gate of the low wide bandgap device 315;

[0086] Pin 350-2 can be connected to the source of the low wide bandgap device 315;

[0087] Pin 350-3 can be connected to the drain of the low wide bandgap device 315;

[0088] ● Pin 350-4 can be connected to the gate of low Si device 330;

[0089] ● Pin 350-5 can be connected to the source / emitter of low Si device 330;

[0090] ● Pin 350-6 can be connected to the drain / collector of the low Si device 330;

[0091] ● Pin 350-7 can be connected to the drain / collector of the high Si device 325;

[0092] ● Pin 350-8 can be connected to the source / emitter of the high Si device 325;

[0093] ● Pin 350-9 can be connected to the gate of high Si device 325;

[0094] Pin 350-10 can be connected to the drain of the high wide bandgap device 320;

[0095] • Pin 350-11 may be connected to the source of the high wide bandgap device 320; and

[0096] • Pin 350 - 12 can be connected to the gate of the high wide bandgap device 320 .

[0097] The power module 300 may also be configured as a discrete, half-bridge, or 6-pack configuration, where unique semiconductor device types in parallel may be electrically connected or decoupled to form multiple functional switches that may be independently controlled.

[0098] Figure 4 A schematic diagram of a half-bridge power module 400 according to an embodiment of the present disclosure is shown. Half-bridge power module 400 can include different types of devices. For example, device 410 and device 420 can be Si-type devices, while device 460 and device 470 can be wide bandgap devices. In addition, device 410 can include a Kelvin pin at collector high 414, a Kelvin pin at gate high 412, and a Kelvin pin at emitter high 416. Device 420 can include a Kelvin pin at collector low 424, a Kelvin pin at gate low 422, and a Kelvin pin at emitter low 426. In addition, Si-type device 410 can be connected to a positive high-voltage DC current source at pin 405 and a negative high-voltage current source at pin 430. In addition, Si-type device 410 can be driven to gate high 412 by signal 418 and to gate low 422 by signal 428.

[0099] Wide bandgap device 460 can include a Kelvin pin at drain high 464, a Kelvin pin at gate high 462, and a Kelvin pin at source high 466. Device 470 can include a Kelvin pin at drain low 474, a Kelvin pin at gate low 472, and a Kelvin pin at source low 476. Furthermore, wide bandgap device 460 can be connected to a positive high voltage DC current at pin 455, and wide bandgap device 470 can be connected to a negative high voltage current at pin 480. Furthermore, wide bandgap device 460 can be driven to gate high 462 by signal 468 and to gate low 472 by signal 478.

[0100] Devices 410, 420, 460, and 470 can be independently controlled using signals 418, 428, 468, and 478. Devices 410, 420, 460, and 470 can also be referred to as independent semiconductor functional switches. In one embodiment, Figure 4 The illustrated half-bridge example can be driven as decoupled and independently driven devices, where, for example, only wide bandgap devices 460 and 470 receive pulse width modulation signals 468 and 478, disabling Si devices 410 and 420. Or conversely, only Si devices 410 and 420 receive pulse width modulation signals 418 and 428, disabling wide bandgap devices 460 and 470.

[0101] In another embodiment, devices 410, 420, 460, and 470 can be driven in parallel as synchronous devices. In the parallel driving scenario, Si devices 410 and 420 and wide bandgap devices 460 and 470 both receive pulse-width modulated signals 418, 428, 468, and 478, respectively. In some embodiments, signals 418 and 428 can operate together in their pulse-width modulated signals (similar to 468 and 478, respectively). When Si and wide bandgap devices are operated in parallel, the location where the offset may occur is between 418 and 468 (and also between 428 and 478, respectively).

[0102] This independent control using gate signals 418, 428, 468, and 478 allows for driving only wide bandgap devices, only Si devices, or both types simultaneously. Furthermore, in some embodiments, Si and wide bandgap devices can have different turn-on / off speeds and gate drive voltage parameters. Separate drive pins allow for different voltages, for example, +15V / -7.5V for Si devices and +18V / -5V for wide bandgap devices. The separate pins also allow for timing and pulse width modulation (PWM) width compensation to account for gate voltage delays, thereby synchronizing turn-on / off times to improve current sharing during transients.

[0103] There may be additional differences between Si-type devices and wide-bandgap devices. For example, wide-bandgap devices can typically have much faster di / dt (e.g., the change in current over time), different conduction characteristics, and lower short-circuit robustness than Si-type devices. Figure 4The use of separate pins for each device / switch (e.g., devices 410, 420, 460, and 470) can be used to configure and protect each device, which can allow unique configuration of saturation detection (DSAT) threshold voltages, blanking times, and other short circuit protection methods for each device type, using separate inputs to the gates of each device (e.g., gate high 412, gate low 422, gate high 462, and gate low 472). The use of separate short circuit detection can also enable communication with a controller regarding which switch type may have been damaged so that another switch can be used.

[0104] While silicon and wide bandgap devices may have different electrical properties, they may also exhibit different physical properties. For example, Si and wide bandgap devices may have different coefficients of thermal expansion, which can include situations where the power module substrate may include non-uniform layers and thicknesses of conductors and / or ceramics, selectively embedded vertical heat sinks, embedded composite dielectrics, or a combination of these to accommodate the different mechanical properties of different die attach materials and thicknesses. Other physical property differences that may require different physical substrate designs may also include different Young's modulus, a measure of a material's ability to withstand changes in length under longitudinal tension or compression, for example.

[0105] Figure 5A 、 5B 5C and 5D are diagrams of different possible examples of power module substrates and associated dies according to embodiments of the present disclosure. For example, Figure 5A A non-uniform thickness is shown through a ceramic substrate 516 having a flat top conductor plane 514 and a bottom conductor plane 518 with die type 510 and die type 512 . Figure 5B A top conductor 524 of non-uniform thickness is shown, with a uniform ceramic plane 526 embedded between the top conductor 524 and the bottom conductor 528 , with corresponding die type 520 and die type 522 .

[0106] Si and wide bandgap devices can also have different heat flux densities; for example, wide bandgap devices can exhibit much higher watt losses / mm than Si devices. 2 In addition, the smaller die area of ​​wide bandgap device dies may result in higher thermal resistance with purely vertical heat flow. One possible compensation approach may include the use of pyrolytic graphite (TPG) and alloys such as CuMo / CuW, which include enhanced heat dissipation properties that can be used to reduce the overall thermal resistance, where the TPG can be embedded in the conductive layer. Figure 5CThe non-uniform thickness across ceramic substrate 536 between planar top conductor plane 534 and bottom conductor plane 538 is shown, where die type 532 utilizes metal alloy heat spreader 539. Note also that in some embodiments, die type 532 may comprise a thinner configuration than die type 530. Figure 5D A non-uniform thickness top conductor 544 and uniform bottom conductor 548 are shown, with a heat spreader 549 (eg, TPG) that may be embedded within the uniform plane of ceramic substrates 546 and 547 , which may support die type 540 and die type 542 .

[0107] also, Figure 5A 、 5B The substrates shown in 5C and 5D may also include composite dielectric layers, such as ceramic, polymer, etc., for electrical insulation instead of ceramic alone to provide potential additional flexibility to compensate for thermal expansion and elastic properties of semiconductor types within the power module.

[0108] Figure 6 is an illustration of a power module sintering process 600 with multiple zones according to an embodiment of the present disclosure. For example, the power module sintering process can include dividing a sintering plate into multiple zones, such as sintering plate 610 and sintering plate 620, which can be uniquely defined for different sintering parameters for multiple different die types that can be attached in a single step. The multi-zone sintering plate can allow for optimized sintering profiles and conditions for each device type while minimizing the number of steps required for the die attach process. The sintering process 600 can also include using a Teflon sheet 625 placed on a sintering fixture 650 or substrate, a combined Si and wide bandgap die 630, and a combined Si and wide bandgap die 640, and can also include a bottom heating plate 660.

[0109] Figure 7A and 7B is an illustration of a multi-chip power module with temperature sensors according to an embodiment of the present disclosure. Multi-chip power module 710 may include device 715, device 720, device 725, and device 730. In one embodiment, device 715 and device 720 may be wide bandgap devices, and device 725 and device 730 may be Si devices. However, due to uneven current density / sharing and the unique thermal conductivity of each die type, different temperature rise and fall rates may result at ambient temperature. Therefore, each device type may require unique temperature monitoring. Therefore, Figure 7A Also included may be an on-die temperature monitor 745 and an on-die temperature monitor 755. In this embodiment, the on-die temperature monitor 745 may be mounted on the Si device 725, while the on-die temperature monitor 755 may be mounted on the wide bandgap device 720. Figure 7Bis an illustration of a device type thermistor 765 , which in this embodiment may focus on a Si type device, and a device type thermistor 775 , which may focus on a wide bandgap type device, but not necessarily mounted on a specific die.

[0110] In addition to the electrical and physical property differences already discussed, using multiple device types in a power module can also create undesirable inductances that can adversely affect each device. For example, wide bandgap devices can utilize faster switching than Si devices, which can further emphasize the importance of optimizing loop inductance to minimize ringing and overshoot that can cause voltage and current stress. Therefore, in a hybrid switch multi-chip power module, wide bandgap devices may need to be prioritized to have optimized loop inductance, while Si-based devices may not require the same design criteria.

[0111] Figure 8A A multi-chip power module design 800 is shown, according to an embodiment of the present disclosure, utilizing a sandwich single-sided cooling of three substrate / printed circuit board layers (e.g., substrate 860, substrate 865, and substrate 870). Substrate 865 can also utilize vias or solid conductors without ceramic for vertical connections between layers, allowing various semiconductor dies to be stacked on top of each other within the same package, forming a half-bridge connection. Multi-chip power module design 800 also illustrates the use of heat sinks 810 and 815. Thus, current can flow in parallel through multiple or user-selected dies within each package's functional switch. Multi-chip power module design 800 can also include a high-voltage DC positive terminal 820, a wide-bandgap die and spacer 830, a Si die and spacer 840, and an AC terminal and / or pinout 850. Multi-chip power module design 800 can also include a high-voltage DC negative terminal 825, a wide-bandgap die and spacer 835, a Si die and spacer 845, and an AC terminal and / or pinout 855.

[0112] Figure 8B A sandwich single-side cooled multi-chip power module design 800 is shown covered by two inductive loop diagrams according to an embodiment of the present disclosure. Figure 8B A layout design is shown for optimizing the loop inductance of the wide bandgap device via loop 875 while also providing low inductance for the Si device (as shown by loop 880).

[0113] Figure 9A and 9B A double-side cooled multi-chip power module using two or fewer substrates according to an embodiment of the present disclosure is shown. Figure 9AA double-sided cooled multi-chip power module is shown, including substrates 985 and 990, upper heat sink 910, and lower heat sink 920. Leg 995 shows a wide bandgap leg, which may include a high-side die 930 and a low-side die 940, with spacers 970. Leg 997 shows a Si leg, which may include a high-side die 950 and a low-side die 960, with spacers 980. Figure 9B A double-sided cooled multi-chip power module is shown, including substrates 985 and 990, upper heat sink 910, and lower heat sink 920. Leg 996 shows a wide bandgap leg, which may include a high-side die 930 and a low-side die 940 without a spacer. Leg 998 shows a Si leg, which may include a high-side die 950 and a low-side die 960 without a spacer.

[0114] Figure 10 A power module system board 1000 with integrated resistor-capacitor buffers is shown in accordance with an embodiment of the present disclosure. As previously discussed, the switching characteristics between wide bandgap switching devices and Si devices are different. The different switching characteristics between Si and wide bandgap devices may result in uneven current sharing during the on and off states of the devices. Therefore, a delay may be implemented using a resistor-capacitor (RC) buffer connected across the drain-source of each device type to shift the turn-on and turn-off of the two device types to achieve uniform current sharing. Additionally, each device type may also have its own unique RC snubber design to align switching transients as needed. This implementation is Figure 10 As shown in FIG, for wide bandgap devices, the power module 1010 may include snubber capacitors 1020-1, 1020-2, and 1020-3 on the high side 1012 of the power module 1010. For wide bandgap devices, the power module 1000 may further include snubber capacitors 1020-4, 1020-5, and 1020-6 on the low side 1014 of the power module 1010. For Si devices, the power module 1000 may further include snubber capacitors 1030-1, 1030-2, and 1030-3 on the high side 1012 of the power module 1010. For Si devices, the power module 1000 may further include snubber capacitors 1030-4, 1030-5, and 1030-6 on the low side 1014 of the power module 1010.

[0115] Figure 11 FIG1 is a flow chart 1100 illustrating a method for controlling a power inverter in a vehicle according to an embodiment of the present disclosure. The flow chart 1100 may begin at step 1105 by receiving a plurality of electronic control signals at a multi-chip power module. Figure 4As discussed, in this embodiment, the half-bridge power module 400 can include four devices. Here, the four devices include two Si devices, namely device 410 and device 420, and two wide bandgap devices, namely device 460 and device 470. Each device includes a gate that can receive electronic control signals, which are labeled as signal 418, signal 428, signal 468, and signal 478. Each of these signals can change the state of each device, such as turning the device on or off. Therefore, the half-bridge power module 400 can function as an inverter and convert DC current into AC current.

[0116] At step 1110, the method may specify that the multi-chip power module may include a plurality of semiconductor devices of a first device type configured in parallel with a plurality of semiconductor devices of a second device type. Again, as Figure 4 discussed in and also in Figure 3 、 7A , 7B, 8A and 8B, the multi-chip power module may include a plurality of semiconductor devices of the first type and the second type. For example, Figure 4 Si semiconductors are shown as devices 410 and 420, and wide bandgap semiconductors are shown as devices 460 and 470. Furthermore, Si devices 410 and 420 are electrically configured to operate in parallel with wide bandgap devices 460 and 470.

[0117] At step 1115, the method may further include configuring the plurality of semiconductor devices of the first device type and the plurality of semiconductor devices of the second device type to form a plurality of functional switches. Figure 4 As discussed in

[15] , devices 410, 420, 460, and 470 can also be referred to as independent semiconductor functional switches. Furthermore, because each device can be driven independently, each functional switch can be driven in a decoupled manner. In this case, for example, only wide bandgap devices 460 and 470 can receive pulse-width modulation signals 468 and 478, disabling Si devices 410 and 420. Alternatively, only Si devices 410 and 420 can receive pulse-width modulation signals 418 and 428, disabling wide bandgap devices 460 and 470.

[0118] At step 1120, the method may continue by independently switching the state of one or more of the plurality of functional switches in response to the plurality of electronic control signals. Figure 4As shown, devices 410, 420, 460, and 470 can be independently controlled using signals 418, 428, 468, and 478. Furthermore, a multi-chip power module can include two separate gate collector / drain, emitter / source pins for each device type, where the power module can include four or two switches (also referred to as functional switches) in a half-bridge configuration, or six or twelve switches in a six-pack configuration, where the functional switches can then drive the device state from on to off or from off to on.

[0119] At step 1125, the method may continue with the plurality of semiconductor devices of the first device type being configured to be electrically controlled for independent use and decoupled from the plurality of semiconductor devices of the second device type, or for use in parallel with the plurality of semiconductor devices of the second device type. Figure 4 As discussed in , the first type of semiconductor devices, such as Si devices 410 and 420, can be decoupled from the wide bandgap devices 460 and 470. This decoupling can be achieved by providing a signal (e.g., a pulse width modulated signal) only to the gates of devices 410 and 420. In a similar manner, the wide bandgap devices 460 and 470 can be decoupled from the Si devices 410 and 420. This decoupling can be achieved by providing a signal (e.g., a pulse width modulated signal) only to the gates of devices 460 and 470.

[0120] In addition, if Figure 4 As shown, Si and wide bandgap devices can be driven in parallel by providing signals to their gates. As discussed, Si and wide bandgap devices can have different turn-on / off speeds and gate drive voltage parameters. Separate drive pins allow for different voltages, such as +15V / -7.5V for Si-type devices and +18V / -5V for wide bandgap devices. Separate pins as described above also allow for compensated gate signal timing or different pulse widths for Si and wide bandgap devices to account for delays in gate voltage, thereby synchronizing turn-on / off times to improve current sharing during transients. Therefore, while Si and wide bandgap devices can be driven in parallel and synchronously, the drive signals to each type of device may not be the same.

[0121] Method flow diagram 1100 may then end.

[0122] The Description and Abstract sections may set forth one or more embodiments of the present disclosure as contemplated by the inventor(s), and thus, are not intended to limit the present disclosure and the appended claims.

[0123] The embodiments of the present disclosure have been described above with reference to functional building blocks that illustrate the implementation of specified functions and their relationships. For ease of description, the boundaries of these functional building blocks have been arbitrarily defined. Alternative boundaries may be defined as long as the specified functions and their relationships can be appropriately performed.

[0124] The foregoing description of specific embodiments will reveal the general nature of the present disclosure so fully that others can, by applying knowledge within the art, readily modify and / or adapt these specific embodiments for various applications without undue experimentation without departing from the general concepts of the present disclosure. Therefore, based on the teachings and guidance given herein, such adaptations and modifications are intended to be within the meaning and range of equivalents of the disclosed embodiments. It should be understood that the wording or terminology herein is for descriptive purposes only and not limiting, so that the terms or wording of this specification should be interpreted by the skilled person in accordance with the teachings and guidance.

[0125] The breadth and scope of the present disclosure should not be limited by any of the above-described exemplary embodiments.

[0126] Exemplary embodiments of the present disclosure have been presented. The present disclosure is not limited to these examples. The examples provided herein are for illustrative purposes only and are not intended to be limiting. Based on the teachings contained herein, alternatives (including equivalents, extensions, variations, deviations, etc. of those described herein) will be clear to those skilled in the relevant art. Such alternatives fall within the scope and spirit of the present disclosure.

Claims

1. A system for controlling a power inverter in a vehicle, comprising: A single multi-chip power module, including: one or more semiconductor devices of a first device type; and one or more semiconductor devices of a second device type; wherein one or more semiconductor devices of a first device type and one or more semiconductor devices of a second device type are arranged in parallel, wherein the one or more semiconductor devices of the first device type and the one or more semiconductor devices of the second device type are configured to form a plurality of functional switches, wherein each functional switch of the plurality of functional switches is under independent electrical control; and One or more semiconductor devices of a first device type are configured to be electrically controlled to be used independently and decoupled from one or more semiconductor devices of a second device type, or to be used in parallel with one or more semiconductor devices of the second device type.

2. The system of claim 1, wherein the first device type comprises silicon-type devices and the second device type comprises wide bandgap (WBG) devices. 3 . The system of claim 1 , wherein the one or more semiconductor devices of the first device type and the one or more semiconductor devices of the second device type comprise a half-bridge configuration.

4. The system of claim 1 , wherein the first device type comprises a first type of wide bandgap (WBG) device, and the second device type comprises a second type of WBG device. 5 . The system of claim 1 , wherein the one or more semiconductor devices of the first device type and the one or more semiconductor devices of the second device type comprise a six-package module configuration.

6. The system of claim 5, wherein the six-package module configuration includes independent semiconductor functional switches.

7. The system of claim 2, wherein the silicon-type device comprises a silicon (Si) metal oxide semiconductor field effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), or a reverse current IGBT.

8. The system of claim 2, wherein the WBG device comprises a silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), a reverse current IGBT, a SiC junction field effect transistor (JFET), or a gallium nitride semiconductor. 9 . The system of claim 1 , wherein each of the plurality of functional switches under independent control is configured to be driven individually by a pulse width modulated signal.

10. The system of claim 1 further comprising two independently separated gate collector / drain, emitter / source pins for the first device type and two independently separated gate collector / drain, emitter / source pins for the second device type.

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