Method for improving germination rate and growth and development capability of soybean seeds through low-temperature plasma technology and application

Abstract

The invention relates to a method for improving the germination rate and the growth and development capability of soybean seeds by using a low-temperature plasma technology. Soybean seeds are placed in low-temperature plasma equipment and treated under the specific voltage and argon conveying conditions, the surface characteristics of the seeds can be changed, the biochemical reaction in the seeds can be excited, absorption of the seeds to moisture and oxygen is promoted, and then the germination rate and the growth and development capacity of the soybean seeds are improved. Experimental results show that the soybean seeds treated by the low-temperature plasma are superior to untreated control groups in growth indexes such as germination rate, root length, plant height, plant weight and the like, and the technology has the advantages of no pollution, reduction of dependence on chemical fertilizers and the like, and can be widely applied to the field of soybean planting.

Description

Technical Field

[0001] The present invention belongs to the fields of physics and biotechnology, and specifically relates to a method for using and applying low-temperature plasma technology to improve the germination rate and growth and development ability of soybean seeds. Background Art

[0002] Low soybean seed germination rates may be due to poor seed quality. During soybean cultivation, seed quality directly impacts germination rates. Poor seed quality can lead to a low germination rate. Poor seed quality can be caused by improper seed storage, poor seed quality, and other factors. Environmental factors are also a major contributor to low soybean seed germination rates. For example, soil temperature, humidity, and light levels all affect soybean seed germination rates. If these environmental factors are not optimal, the germination rate can be low. The consequences of a low soybean seed germination rate are severe. First, a low germination rate can reduce soybean farmers' harvests. This low germination rate means the seeds' growth potential is compromised, resulting in a lower-than-expected yield. Second, a low germination rate can increase costs for farmers. To compensate for the low germination rate, farmers may increase seed usage, increasing production costs. Finally, a low germination rate can affect soybean quality. Plants grown from seeds with a low germination rate may exhibit poor growth and low yields, impacting soybean quality and market competitiveness. Although there are technologies that can improve the germination rate of soybean seeds or enhance seed growth and development, the results are not ideal.

[0003] Low-temperature plasma has been found to alter seed surface properties, affecting their water absorption and oxygen permeability. Studies have shown that low-temperature plasma treatment can induce microstructural and chemical changes on the seed surface, increasing surface roughness and hydrophilicity, thereby promoting water and oxygen absorption. This facilitates rapid water and oxygen absorption in the soil, thereby enhancing germination and growth. Furthermore, low-temperature plasma can influence the germination and growth of plant seeds by stimulating internal chemical reactions. When seeds are treated with low-temperature plasma, chemical changes may occur on their surface and internal structure, stimulating biochemical reactions within the seeds. These reactions may include promoting the synthesis and secretion of hormones within the seeds, thereby affecting seed germination and growth.

[0004] Therefore, in recent years, researchers have been actively looking for an effective and pollution-free way to improve the germination rate and growth development of soybean seeds, and low-temperature plasma technology has better effects when applied to soybean seeds. Summary of the Invention

[0005] Purpose of the invention: The technical problem to be solved by the present invention is to address the deficiencies of the existing technology and provide a low-temperature plasma technology and application for improving the germination rate and growth of soybean seeds.

[0006] In order to solve the above technical problems, the present invention discloses a method for treating soybean seeds with low-temperature plasma technology to affect the germination rate and growth and development ability of the soybean seeds.

[0007] Low-temperature plasma technology utilizes the high energy properties of plasma and, through specific processing methods, activates elements like oxygen and nitrogen, rendering them active. These activated oxygen and nitrogen species promote germination and nutrient absorption during growth and development, thereby increasing plant growth and yield. Compared to traditional chemical fertilizer application methods, low-temperature plasma technology not only reduces reliance on chemical fertilizers but also reduces environmental pollution.

[0008] The active oxygen species include superoxide anions, hydrogen peroxide, and hydroxyl radicals, while the active nitrogen species include nitrogen radicals, nitric oxide, and nitric peroxide.

[0009] The low-temperature plasma technology for improving soybean seed germination rate and growth and development ability includes the following steps:

[0010] (1) Prepare 90 soybean seeds of the Suinong series, 90 soybean seeds of the Heinong series, and 90 soybean seeds of the Dongsheng series.

[0011] (2) Prepare low-temperature plasma equipment;

[0012] (3) Treating soybean seeds with low-temperature plasma: placing the soybean seeds from step (1) into the low-temperature plasma equipment from step (2) to obtain treated soybean seeds for subsequent experiments.

[0013] In step (1), 90 of each of the three soybean seeds were taken and placed in a beaker filled with clean water, and the three soybean seeds were soaked for 6 hours. After soaking, the soybean seeds were evenly placed in a glass culture dish and set aside.

[0014] In step (2), the low-temperature plasma equipment needs to be connected to valves, a compressor, and an argon gas delivery device.

[0015] In step (3), the prepared soybean seeds are treated in a low-temperature plasma device. The low-temperature plasma treatment voltage is 110V, 117V, 130V and 150V input voltage.

[0016] In step (3), the argon gas must be delivered to ensure that the low-temperature plasma equipment is fully filled. When adjusting the voltage, it should be done in one step to avoid stopping at other voltages.

[0017] Among them, the low-temperature plasma can promote the germination rate and growth and development of soybean seeds, and promote the germination rate and growth and development of soybean seeds by regulating hormone levels through the active oxygen and active nitrogen components generated by the low-temperature plasma equipment.

[0018] Seed storage conditions, handling, and age all affect their quality. If seeds are exposed to high temperatures, high humidity, or other adverse conditions during storage, their germination rate will be affected. Furthermore, seed handling is also important; if they are damaged or contaminated during processing, this can affect their germination rate and ability to grow and develop.

[0019] Beneficial effects: Compared with the prior art, the present invention has the following advantages:

[0020] (1) This technology can improve the germination rate and growth and development ability of seeds through low-temperature plasma technology. It can also promote the metabolism of soybean seeds by generating reactive oxygen and reactive nitrogen.

[0021] (2) The existing technology has the problem of insufficient technical level in improving the germination rate and growth and development ability of soybean seeds. At present, the germination rate and growth and development ability of soybean seeds are affected by many factors, including soil conditions, climate environment, pests and diseases, etc. However, the existing technology often only improves a single factor, but lacks research and technical means to study the comprehensive impact of multiple factors. Therefore, it is different from the existing technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 Measurement of various indicators of three different series of soybean seeds in hydroponics

[0023] Figure 2 Measurement of various indicators of Dongsheng series soybean seeds in soil cultivation DETAILED DESCRIPTION

[0024] The present invention can be better understood with reference to the following examples.

[0025] Example 1: Process of low-temperature plasma treatment of soybean seeds

[0026] (1) Preparation of soybean seeds: Prepare 90 soybean seeds of the Suinong series, 90 soybean seeds of the Heinong series, and 90 soybean seeds of the Dongsheng series. Place each seed in a beaker, soak it in tap water for 6 hours, and evenly place it in a glass culture dish for subsequent processing.

[0027] (2) Preparation of low-temperature plasma equipment: The low-temperature plasma equipment is connected to a valve that can adjust the voltage, and the valve is connected to the power supply and transformer. At the same time, the low-temperature plasma equipment needs to have an air inlet and an air outlet. Because argon is an inert gas, the air inlet and air outlet are both arranged above the low-temperature plasma equipment. The air inlet is connected to the argon tank with a hose, and the air outlet is connected to the outside air. After preparation, it can be used for subsequent experiments.

[0028] (3) Low-temperature plasma treatment of soybean seeds: After evenly placing the prepared soybean seeds in a glass culture dish, place the culture dish in the connected low-temperature plasma equipment. To prevent leakage during the delivery of argon, the low-temperature plasma equipment needs to be completely sealed. Argon is delivered to the equipment at a rate of 5 L / min for 30 seconds to fill the interior of the equipment. Then adjust the valve to treat the soybean seeds at voltages of 110 V, 117 V, 130 V, and 150 V for 1 minute. After the treatment is completed, unplug the power supply and take out the treated soybean seeds for later use.

[0029] Example 2: Soybean seed germination rate and growth and development

[0030] (1) Test seeds

[0031] Experimental seeds include Suinong series soybean seeds, Heinong series soybean seeds and Dongsheng series soybean seeds.

[0032] (2) Experimental methods

[0033] Use hydroponic method. Add appropriate amount of clean water to the glass culture dish and pad it with appropriate amount of filter paper to ensure sufficient water and fix the seeds. Place the processed soybean seeds evenly on the filter paper and put them in the seed germination box. Provide suitable temperature and sufficient water. After three days, observe the germination rate and the seed weight, root length and stem length of the three soybean seeds, and observe the growth and development of the seeds for seven days. At the same time, soil culture is used to detect the growth and development of Dongsheng series soybean seeds. On the fourteenth day, take out and observe the growth and development of the seeds, including plant weight, plant height, plant main root length, plant root dry weight, plant root fresh weight, plant root number and plant root length.

[0034] (3) Testing items:

[0035] On the third day, the hydroponic Dongsheng soybean seeds were observed, and their seed weight, root length, and plant height were measured. The growth of the Dongsheng seedlings was observed on the seventh day. On the fourteenth day, the growth and development of the Dongsheng soybean seeds were observed, and plant weight, plant height, taproot length, root dry weight, root fresh weight, and the number and length of fibrous roots were measured.

[0036] Soybean seed weight and root length measurement

[0037] Soybean seed weight measurement: On the third day of cultivation, the three soybean seeds were taken out separately. Before measurement, clean filter paper was taken to absorb the moisture on the surface of the seeds. The seeds were placed on an electronic balance, and the weight of the seeds was measured and recorded. At the same time, a length measuring ruler was used to record the root length of each type of seed. Finally, they were arranged neatly and photographed for record. On the seventh day, the seeds were directly taken out and photographed to record the growth and development of the seeds. On the fourteenth day, the soil-cultured Dongsheng series soybean seeds were taken out and the growth and development were observed. At the same time, the plant weight, plant height, plant main root length, plant root dry weight, plant root fresh weight, plant fibrous root number, and plant fibrous root length were measured.

[0038] (6) Experimental results:

[0039] Figure 1 :Germination rate and growth of hydroponic soybean seeds

[0040] The results showed that the seed weight, seed root length and plant height of the Suinong series soybean seeds treated with low-temperature plasma at 117V were significantly higher than those of the con group ( Figure 1 A). After the soybean seeds of the Hei Nong series were treated with low-temperature plasma at 110V, the root length of the soybean seeds was significantly increased compared with the control group, while the others showed no significant changes ( Figure 1 B). On the third day, the germination rate of the Dongsheng series soybean rice dumplings after low-temperature plasma treatment was significantly higher than that of the con group. The seed weight of the low-temperature plasma treatment group was significantly higher than that of the con group at 110V and 150V. The root length of the seeds was significantly higher than that of the con group at 150V. The plant height was also significantly higher than that of the con group at 150V. Finally, on the seventh day, we observed the growth and development of the plants after low-temperature plasma treatment and found that the growth and development of the low-temperature plasma treatment group was significantly better than that of the con group ( Figure 1 C).

[0041] Figure 2 :Soil-cultured soybean seed germination rate and seed growth and development

[0042] After the low-temperature plasma treatment, the soybean seeds of the Dongsheng series were cultured in the soil for 14 days, and then the growth and development of the plants were observed. It was found that the growth and development of the low-temperature plasma treatment group was significantly better than that of the con group ( Figure 2A). We subsequently measured plant weight and found that the low-temperature plasma-treated group had significantly higher weight than the control group, with the most significant increase at 150V. Plant height also increased significantly at 150V compared to the control group. The main root length also increased most significantly at 150V compared to the control group. Plant dry weight was significantly higher at 130V than the control group. However, plant fresh weight did not change significantly. While the number of root hairs was significantly greater at 150V than the control group, root hair length only increased significantly at 110V.

[0043] Conclusion: This technology has a promoting effect on soybean seeds; this technology can significantly promote the germination rate of soybean seeds, as well as the subsequent growth and development process. Therefore, low-temperature plasma technology can be used to improve the germination rate and growth and development ability of soybean seeds.

[0044] This technology provides a method and approach for the use and application of low-temperature plasma that can improve the germination rate and growth and development ability of soybean seeds.

Claims

1. A low-temperature plasma treatment method for improving soybean seed germination rate and growth and development ability, comprising: Prepare soybean seeds; Prepare a low-temperature plasma device, connect the device to a valve, a transformer, and an argon gas delivery device; Place the soybean seeds in the low-temperature plasma equipment, supply argon gas to fill the interior of the equipment, adjust the input voltage to (100V-200V), and treat the soybean seeds for a time range of (15s-3min).

2. The low-temperature plasma treatment method for improving soybean seed germination rate and growth and development ability according to claim 1, characterized in that: The soybean seeds are Suinong series, Heinong series or Dongsheng series soybean seeds.

3. The low-temperature plasma treatment method for improving soybean seed germination rate and growth and development ability according to claim 1, characterized in that: The delivery rate of the argon gas is (1-5 L / min), and the delivery time is (10s-1min).

4. A soybean seed obtained by treating with the method according to any one of claims 1 to 3.

5. Use of the soybean seeds according to claim 4 in improving the germination rate and growth and development ability of soybean seeds.

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