Semiconductor process chamber and semiconductor process equipment

Abstract

The invention discloses a semiconductor process chamber, and belongs to the technical field of semiconductors. The semiconductor process chamber comprises a chamber body, a collimator, a capacitor device and a capacitor adjusting device, a base used for bearing a wafer is arranged in the chamber body, a target material mounting position is arranged at the top of the chamber body, the collimator is located in the chamber body, and the collimator is arranged between the base and the target material mounting position; the capacitance device is electrically connected with the collimator and is grounded, and the capacitance adjusting device is connected with the capacitance device so as to adjust the capacitance value of the capacitance device and further adjust the ground capacitance value of the collimator. The semiconductor process equipment comprises the semiconductor process chamber. Therefore, the ground capacitance value of the collimator is adjusted through the capacitance adjusting device, so that the radio frequency bias voltage coupled to the collimator is changed, the acting effect of radio frequency energy on a wafer is adjusted, and the effect of improving the film deposition uniformity is achieved.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and specifically relates to a semiconductor process chamber and semiconductor process equipment. Background Art

[0002] PVD (Physical Vapor Deposition) is a plasma generation process based on a vacuum state. Since no chemical reactions occur during the deposition process, it has the advantages of high coating purity and strong controllability. Therefore, it is one of the commonly used processes in the manufacturing of high-end integrated circuits and high-end semiconductor devices.

[0003] In physical vapor deposition equipment, the effect of radio frequency energy on the wafer on the base is constant, and the deposition effect on the wafer is constant, which cannot effectively improve the uniformity of thin film deposition as needed. Moreover, the maintenance time is long, the cost is high, and the adjustability for different processes is poor. Summary of the Invention

[0004] The purpose of the embodiments of the present application is to provide a semiconductor process chamber and semiconductor process equipment that can solve the problems in the related art of being unable to improve the uniformity of thin film deposition, high maintenance costs, and poor adjustability for different processes.

[0005] In a first aspect, an embodiment of the present application provides a semiconductor process chamber, comprising a chamber body, a collimator, a capacitor device, and a capacitor adjustment device, wherein a base for supporting a wafer is provided in the chamber body, a target mounting position is provided on the top of the chamber body, and the collimator is located in the chamber body and disposed between the base and the target mounting position;

[0006] The capacitor device is electrically connected to the collimator and is grounded. The capacitance adjustment device is connected to the capacitor device to adjust the capacitance value of the capacitor device, thereby adjusting the capacitance value of the collimator to the ground.

[0007] In a second aspect, an embodiment of the present application further provides a semiconductor process equipment, including the above-mentioned semiconductor process chamber.

[0008] In an embodiment of the present application, the collimator can restrain the direction of the metal particles escaping from the target material on the target material mounting position, so that the sputtered particles are deposited at the bottom of the deep hole of the wafer in a direction perpendicular to the plane of the wafer to meet the needs of advanced processes. Based on this, a capacitor device and a capacitor adjustment device are set so that the radio frequency energy passing through the collimator can reach the ground through the equivalent circuit of the capacitor device, and the capacitor adjustment device is used to adjust the capacitance value of the capacitor device, and then adjust the capacitance value of the collimator to the ground, thereby changing the radio frequency bias coupled to the collimator. First, the potential difference between the target material and the collimator is adjusted to reduce the probability of sparks between the two, and second, the effect of the radio frequency energy on the wafer is adjusted to achieve the effect of improving the uniformity of thin film deposition. Then, for different process steps, the capacitance adjustment device can be used to directly adjust the capacitance value of the collimator to the ground as needed, thereby adjusting the uniformity of thin film deposition, and improving the adjustability for different processes; there is no need to replace capacitor devices of different capacitance values ​​to adjust the capacitance value, and there is no need for manual disassembly and assembly process, which reduces maintenance costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 Schematic diagram of the structure of the semiconductor process chamber disclosed in the embodiment of the present application;

[0010] Figure 2 is a schematic diagram of the distribution of the capacitor device disclosed in the embodiment of the present application;

[0011] Figure 3 Schematic diagram of a capacitor device and a capacitor adjustment device disclosed in an embodiment of the present application.

[0012] Description of reference numerals:

[0013] 100-chamber body, 110-base,

[0014] 200-target,

[0015] 300-collimator,

[0016] 400-capacitor device, 410-relay, 420-capacitor, 430-conductive shell, 440-first metal conductive column, 450-second metal conductive column, 460-third metal conductive column, 461-plug female connector,

[0017] 500-capacitor adjustment device,

[0018] 600-Adapter,

[0019] 700-first filter,

[0020] 810-electromagnet, 820-shielding cover, 830-cover ring, 840-grounding copper column, 850-copper tape, 860-cold pump, 870-shielding cover, 881-DC power supply, 882-second filter, 891-RF power supply, 892-deviation matcher, 893-DC blocking capacitor,

[0021] 910 -rotating support structure, 920 -rotating mechanism, 930 -first supporting plate, 931 -first counterweight, 940 -second supporting plate, 941 -second counterweight, 950 -magnetic control assembly. DETAILED DESCRIPTION

[0022] The following will be combined with the accompanying drawings in the embodiments of the present application to clearly describe the technical solutions in the embodiments of the present application. Obviously, the embodiments described are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of this application.

[0023] The terms "first," "second," and the like in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of this application can be implemented in an order other than that illustrated or described herein, and that the objects distinguished by "first," "second," and the like are generally of the same type, and do not limit the number of objects; for example, the first object can be one or more. In addition, the term "and / or" in the specification and claims refers to at least one of the connected objects, and the character " / " generally indicates that the objects connected are in an "or" relationship.

[0024] The semiconductor process chamber and semiconductor process equipment provided in the embodiments of the present application are described in detail below with reference to specific embodiments and their application scenarios in conjunction with the accompanying drawings.

[0025] Please refer to Figure 1-Figure 3 The semiconductor process chamber disclosed in the embodiment of the present application includes a chamber body 100, a collimator 300, a capacitor device 400 and a capacitor adjustment device 500, wherein the chamber body 100 serves as a basic component for installing the collimator 300 and the capacitor device 400, and the chamber body 100 provides a vacuum environment required for processing wafers. A base 110 for supporting wafers is provided in the chamber body 100.

[0026] A target mounting position is provided on the top of the chamber body 100, which is used to mount a target 200. The target 200 serves as a sputtering source. The target mounting position is opposite to the base 110. In this way, under vacuum conditions, the target 200 can sputter particles toward the base 110 through magnetron sputtering or the like to form a thin film on the surface of the wafer supported by the base 110.

[0027] The collimator 300 is located in the chamber body 100, and the collimator 300 is arranged between the base 110 and the target material mounting position, that is, the collimator 300 is located between the base 110 and the target material 200, and the collimator 300 is opposite to the target material 200. The collimator 300 can effectively constrain the direction of the particles sputtered by the target material 200, so that the sputtered particles are deposited at the bottom of the deep hole in a direction perpendicular to the supporting surface of the base 110 to meet the requirements of advanced processes; the capacitor device 400 is electrically connected to the collimator 300, and the capacitor device 400 is grounded. In this way, by setting the capacitor device 400, the ground return branch of the collimator 300 is increased, and the radio frequency capability passing through the collimator 300 can be returned to the ground through the equivalent circuit of the capacitor device 400, thereby improving the uniformity of the deposited film.

[0028] Furthermore, the capacitance adjustment device 500 is connected to the capacitance device 400 to adjust the capacitance value of the capacitance device 400, thereby adjusting the capacitance value of the collimator 300 to the ground. Optionally, the capacitance device 400 may include multiple capacitors 420 connected in parallel, and the capacitance adjustment device 500 is used to control the conduction or disconnection of the RF branch where each capacitor 420 is located, thereby controlling the number of capacitors 420 connected in parallel to the RF loop; or, the capacitance device 400 may be an adjustable capacitor 420, and the capacitance adjustment device 500 is electrically connected to the adjustable capacitor 420 to adjust the capacitance value of the adjustable capacitor 420; or, the capacitance device 400 may include multiple capacitors 420 connected in series, wherein at least one capacitor 420 has a parallel RF branch, and the RF branch is not provided with a load, and the capacitance adjustment device 500 is used to control the conduction and disconnection of each RF branch, thereby controlling the number of capacitors 420 connected in series to the RF loop to adjust the capacitance value.

[0029] In this embodiment, based on the collimator 300 and the capacitor device 400 provided in the semiconductor process chamber, a capacitor adjustment device 500 is added. The capacitor adjustment device 500 is used to adjust the capacitance value of the capacitor device 400, and then adjust the capacitance value of the collimator 300 to the ground, thereby changing the RF bias coupled to the collimator 300. First, the potential difference between the target material 200 and the collimator 300 is adjusted to reduce the probability of sparks between the two. Second, the effect of the RF energy on the wafer is adjusted to achieve the effect of improving the uniformity of thin film deposition. Then, for different process steps, the capacitance value of the collimator 300 to the ground can be directly adjusted by the capacitor adjustment device 500 as needed, thereby adjusting the uniformity of thin film deposition, and improving the adjustability for different processes. Moreover, there is no need to replace the capacitor device 400 of different capacitance values ​​to adjust the capacitance value, and no manual disassembly process is required, which reduces the time cost of manual replacement, shortens maintenance time, and reduces costs.

[0030] In an optional embodiment, if Figure 3 As shown, the capacitor device 400 includes a plurality of switching elements and a plurality of capacitors 420, the plurality of capacitors 420 are connected in parallel, each capacitor 420 is grounded, the switching elements and the capacitors 420 are connected in series one by one, and each switching element controls the conduction and disconnection of the RF branch where the corresponding capacitor 420 is located. The capacitance adjustment device 500 includes a control element, which controls the on-off state of each switching element, thereby controlling the number of capacitors 420 connected in parallel to the RF loop, that is, controlling the number of capacitors 420 participating in parallel, thereby achieving capacitance value adjustment. Specifically, when the control element controls the switch element to be in the on state, the RF branch where the switch element is located is turned on, and the capacitor 420 corresponding to the switch element is connected in parallel to the RF loop; when the control element controls the switch element to be in the off state, the RF branch where the switch element is located is disconnected, and the capacitor 420 corresponding to the switch element is not connected in parallel to the RF loop.

[0031] Optionally, the capacitor 420 can be a microstrip capacitor, and the capacitance value of each capacitor 420 can be equal or unequal; the capacitor device 400 can include twelve switching elements and twelve capacitors 420. Of course, the switching elements and capacitors 420 can also be set to other numbers, and the embodiments of the present application do not impose specific restrictions on this.

[0032] The capacitor device 400 in this embodiment is provided with multiple parallel branches, and the capacitance adjustment device 500 adjusts the capacitance value by controlling the number of capacitors 420 connected in parallel to the RF loop. In this way, by connecting the capacitors 420 in parallel, the current can be dispersed to multiple parallel branches, reducing the current in each parallel branch. At the same time, it is beneficial to reduce the return impedance of the collimator 300 and reduce the RF bias coupled to the collimator 300.

[0033] In an optional embodiment, the switch element may be a single-pole double-throw switch, and the control element may be a driver. The driver is connected to the free end of the single-pole double-throw switch to drive the free end of the single-pole double-throw switch to move, thereby switching the single-pole double-throw switch to an open or closed state. In this manner, the driver needs to be controlled to control the movement distance and direction of the free end of the single-pole double-throw switch to achieve the on / off state of the single-pole double-throw switch.

[0034] In another embodiment, each switching element includes a relay 410, the relay 410 is connected in series with the corresponding capacitor 420, the capacitance adjustment device 500 also includes a power supply module, the power supply module is respectively connected to each relay 410, the power supply module is used to power the relay 410, the control element controls the electrical connection state of the relay 410 and the power supply module, the relay 410 has a contact, when the control element controls the relay 410 to be electrically connected to the power supply module, that is, when the power supply module powers the relay 410, the contact is in a conductive state, the RF branch where the relay 410 is located is conductive, and the capacitor 420 connected in series with the relay 410 is connected in parallel to the RF circuit; when the control element controls the relay 410 to be electrically disconnected from the power supply module, that is, when the power supply module does not power the relay 410, the contact is in a disconnected state, the RF branch where the relay 410 is located is in an open circuit state, and the capacitor 420 connected in series with the relay 410 is not connected in parallel to the RF circuit. Optionally, the control element can be an electric switch, and the two ends of the electric switch are electrically connected to the power supply module and the relay 410 respectively.

[0035] The control element directly controls whether the power supply module is electrically connected to the relay 410 to control the on / off state of the relay 410. That is, the control element only needs to control whether the relay 410 is energized, without the need for a complex control process for the switching element, and the reliability of the relay 410 is higher.

[0036] In an optional embodiment, if Figure 3 As shown, the capacitor device 400 also includes a conductive shell 430, each capacitor 420 and each switching element is arranged in the conductive shell 430, and the conductive shell 430 is in contact with the chamber body 100, and each capacitor 420 is grounded through the chamber body 100. In other words, the conductive shell 430 is in contact with the chamber body 100, the conductive shell 430 is grounded through the chamber body 100, and each capacitor 420 is electrically connected to the conductive shell 430, so each capacitor 420 is also grounded. Optionally, the conductive shell 430 can be made of aluminum and subjected to conductive oxidation treatment to improve its conductive performance; the conductive shell 430 can be a cubic structure or a structure of other shapes, and each capacitor 420, each relay 410 and the power supply module are all arranged in the conductive shell 430.

[0037] In this embodiment, a conductive shell 430 is provided to surround each switching element and each capacitor 420, thereby effectively protecting the capacitor device 400; at the same time, the conductive shell 430 is in contact with the chamber body 100, and the conductive shell 430 is grounded through the chamber body 100. The grounding effect is good, and the radio frequency signal can be confined within the conductive shell 430 to prevent the radio frequency energy from radiating outward.

[0038] Of course, in other embodiments, the insulating shell can replace the conductive shell 430, and each capacitor 420 and each switching element are arranged in the insulating shell. The insulating shell is used to protect each capacitor 420 and each switching element. Each capacitor 420 is electrically connected to a conductive column or a conductive wire. The insulating shell is provided with an opening for the conductive column or the conductive wire to pass through, so that the conductive column or the conductive wire can extend out of the insulating shell, so that the conductive column or the conductive wire can be grounded, thereby achieving grounding of each capacitor 420.

[0039] In an optional embodiment, the capacitor device 400 further includes a plurality of metal conductive pillars, each corresponding to each capacitor 420. Each capacitor 420 is electrically connected to the conductive shell 430 via a corresponding metal conductive pillar. Thus, the metal conductive pillars are used to electrically connect the capacitors 420 to the conductive shell 430. Furthermore, the metal conductive pillars can support the capacitors 420, preventing them from being scattered on the bottom of the conductive shell 430.

[0040] In another embodiment, the capacitor device 400 further includes a first metal conductive pillar 440 and a second metal conductive pillar 450. The first metal conductive pillar 440 is respectively connected to each capacitor 420. The first end of the second metal conductive pillar 450 is connected to the first metal conductive pillar 440 to achieve electrical connection between the two. The second end of the second metal conductive pillar 450 is connected to the conductive shell 430 to achieve electrical connection between the two, so as to be grounded through the conductive shell 430 and the chamber body 100. Optionally, the first end of each capacitor 420 is respectively electrically connected to the corresponding relay 410, and the second end of each capacitor 420 is respectively electrically connected to the first metal conductive pillar 440. Since the conductive shell 430 is grounded by contacting the chamber body 100, the second end of the second metal conductive pillar 450 is also grounded.

[0041] Further optionally, the first metal conductive pillar 440 and the second metal conductive pillar 450 are made of copper. Of course, other conductive materials may also be used.

[0042] With this embodiment, only the first metal conductive column 440 and the second metal conductive column 450 are required to electrically connect each capacitor 420 to the conductive shell 430. There is no need to set up a number of metal conductive columns corresponding to the number of capacitors 420, which reduces the number of components and helps to simplify the structure of the capacitor device 400.

[0043] In a further embodiment, there are multiple second metal conductive pillars 450, and each second metal conductive pillar 450 is spaced apart in the extension direction of the first metal conductive pillar 440. Each second metal conductive pillar 450 is grounded through the conductive shell 430 and the chamber body 100 and is connected to the first metal conductive pillar 440. In this embodiment, multiple second metal conductive pillars 450 are grounded separately, which is conducive to strengthening the grounding effect and preventing the capacitor device 400 from being in a floating potential and thus causing the coupled RF energy to return to the ground through other RF branches outside the capacitor device 400. Optionally, as Figure 3 As shown, the number of the second metal conductive pillars 450 is three. Of course, the number of the second metal conductive pillars 450 can also be set to other numbers, as long as the number of the second metal conductive pillars 450 is less than the number of the capacitors 420.

[0044] Optionally, capacitor device 400 further includes a third metal conductive post 460, which is also located within conductive shell 430 and parallel to first metal conductive post 440. Each relay 410 and each capacitor 420 is located between first metal conductive post 440 and third metal conductive post 460. Each relay 410 is electrically connected to each third metal conductive post 460, and the relays 410 are spaced apart along the extension direction of third metal conductive post 460. This eliminates the need for each relay 410 to be connected to conductive shell 430 using a separate metal conductive post, further reducing the number of components and simplifying the structure of capacitor device 400.

[0045] In the solution of this application, if Figure 1 As shown, the semiconductor process chamber further includes a transfer device 600, which is disposed on a sidewall of the chamber body 100 and is connected to the collimator 300 to support the collimator 300. The capacitor device 400 is located outside the chamber body 100, and the collimator 300 is electrically connected to the capacitor device 400 via the transfer device 600. Optionally, the transfer device 600 is an adapter, which includes a metal conductive structure and an insulating cylinder. The insulating cylinder surrounds the metal conductive structure. The metal conductive structure may be made of aluminum, and the insulating cylinder may be made of ceramic. By providing the insulating cylinder, the metal conductive structure is insulated and isolated from the chamber body 100, ensuring that a DC bias is subsequently stably applied to the collimator 300. The first end of the metal conductive structure is electrically connected to the collimator 300, and the second end of the metal conductive structure is electrically connected to the capacitor device 400, that is, the collimator 300 is electrically connected to the capacitor device 400 via the metal conductive structure.

[0046] When the space inside the chamber body 100 is insufficient to directly install the capacitor device 400 , the adapter device 600 can be provided to electrically connect the capacitor device 400 outside the chamber body 100 to the collimator 300 and also support the collimator 300 .

[0047] Of course, in other embodiments, the semiconductor process chamber may not be provided with the adapter device 600, and the capacitor device 400 is provided inside the chamber body 100. The capacitor device 400 is directly electrically connected to the collimator 300, and a support structure for supporting the collimator 300 is also provided inside the chamber body 100.

[0048] In an optional embodiment, if Figure 3 As shown, one of the capacitor device 400 and the adapter device 600 is provided with a male plug, and the other is provided with a female plug 461. The male plug is plugged into and mated with the female plug 461 to electrically connect the adapter device 600 to the collimator 300. Optionally, the female plug 461 is provided on the third metal conductive post 460, and the female plug 461 passes through the conductive shell 430 to extend outside the conductive shell 430, thereby facilitating mating with the male plug. The male plug is provided on the metal conductive structure of the adapter device 600; alternatively, the male plug is provided on the third metal conductive post 460, and the female plug 461 is provided on the metal conductive structure of the adapter device 600.

[0049] The matching structure of the male plug and the female plug 461 can realize the electrical connection between the capacitor device 400 and the adapter device 600, and the male plug and the female plug 461 can be separated to disassemble the capacitor device 400, making it easy to replace other capacitor devices 400.

[0050] Of course, in other embodiments, the third metal conductive column 460 of the capacitor device 400 can be provided with a connector, which passes through the conductive shell 430 to extend outside the conductive shell 430, and the connector can be connected and electrically connected to the metal conductive structure of the adapter device 600 by welding.

[0051] In an optional embodiment, the number of the capacitor device 400 is one, and the capacitor device 400 is grounded and electrically connected to the collimator 300 .

[0052] In another embodiment, Figure 2As shown, there are multiple capacitor devices 400, each of which is spaced apart along the circumference of the base 110, and each of which is grounded and electrically connected to the collimator 300. In this way, the multiple capacitor devices 400 provide multiple equivalent return branches for the plasma, and the radio frequency energy is respectively returned to the ground through the multiple capacitor devices 400 equivalent circuits, further improving the uniformity of the thin film deposition. Moreover, the parallel connection of the multiple capacitor devices 400 can reduce the return impedance of the collimator 300, reduce the radio frequency bias coupled to the collimator 300, and reduce the potential difference between the negative bias of the target material 200 and the positive voltage value of the collimator 300, thereby effectively reducing the risk of ignition.

[0053] Optionally, there are multiple adapter devices 600 , and the capacitor devices 400 correspond to the adapter devices 600 one by one; and the capacitor devices 400 are evenly distributed in the circumferential direction of the base 110 .

[0054] In an optional embodiment, if Figure 1 As shown, the semiconductor process chamber further includes a first filter 700, which is located outside the chamber body 100. The first filter 700 is grounded and electrically connected to the collimator 300. Optionally, the first filter 700 may be box-shaped.

[0055] In an alternative embodiment, reference Figure 1 As shown, the semiconductor process chamber also includes an electromagnet 810. There are multiple electromagnets 810 distributed in a ring-shaped manner on the outer wall of the chamber body 100. Moreover, in the height direction of the chamber body 100, the electromagnets 810 are arranged in two groups. The current direction of each group of electromagnets 810 is different. The two groups of electromagnets 810 are energized to generate a magnetic field. The magnetic field penetrates the side wall of the chamber body 100 and enters the chamber body 100 to adjust the motion trajectory of the plasma and assist in adjusting the uniformity of thin film deposition. Moreover, the two groups of electromagnets 810 respectively bind particles in two opposite radial directions of the wafer.

[0056] Optionally, a shield 820, a cover ring 830, and a water-cooling plate are further provided within the chamber body 100. The shield 820 is connected to the sidewalls of the chamber body 100, and the cover ring 830 is positioned around the periphery of the base 110. A seal is formed between the shield 820 and the cover ring 830 to confine the plasma within the chamber body 100 and prevent leakage. The base 110 includes an adsorption plate, and the water-cooling plate is used to cool the adsorption plate. The lower end of the shield 820 is connected to a grounding copper post 840, which is connected to the outer shell of the water-cooling plate via copper tape 850. This eliminates the potential difference between the shield 820 and the outer shell of the water-cooling plate, preventing ignition and any impact on the thin film deposition effect.

[0057] Optionally, a cold pump 860 and a shielding cover 870 are also provided at the bottom of the chamber body 100. The cold pump 860 is used to maintain the vacuum environment inside the chamber body 100. The shielding cover 870 is arranged on the top of the cold pump 860 to prevent the cold pump 860 from being affected during the lamp baking of the chamber body 100.

[0058] Optionally, the adsorption plate has built-in electrodes that apply a 13.56MHz RF bias. RF energy is emitted from RF power supply 891, transmitted via a cable to bias matcher 892, and ultimately fed into chamber body 100. Simultaneously, the electrodes also apply a clamping voltage, provided by DC power supply 881, to secure the wafer. To prevent the two power supplies from interfering with each other, a DC blocking capacitor 893 is placed before RF power supply 891, and a second filter 882 is placed before DC power supply 881.

[0059] In an alternative embodiment, reference Figure 1 As shown, the semiconductor process chamber also includes a magnetron assembly 950, a rotating support structure 910 and a rotating mechanism 920, wherein the rotating support structure 910 is located above the chamber body 100, and the rotating support structure 910 is used to support the rotating mechanism 920, and the rotating support structure 910 and the top of the chamber body 100 jointly seal the deionized water, and the rotating mechanism 920 is driven to rotate by the motor, thereby driving the magnetron assembly 950 to rotate. Optionally, the semiconductor processing chamber further includes a first support plate 930, a first counterweight 931, a second support plate 940, and a second counterweight 941. A magnetron assembly 950 and the first counterweight 931 are respectively disposed at opposite ends of the first support plate 930. The first counterweight 931 balances the forces on the first support plate 930. Furthermore, the first support plate 930 is rotatably disposed at one end of the second support plate 940, and the second counterweight 941 is disposed at the other end of the second support plate 940, so that the first support plate 930 and the second counterweight 941 face each other. The second counterweight 941 balances the forces on the second support plate 940. In this manner, the first support plate 930 can drive the magnetron assembly 950 to rotate relative to the second support plate 940, and the rotation mechanism 920 can also drive the second support plate 940 to drive the magnetron assembly 950 to rotate. The magnetron assembly 950 can include multiple magnetrons.

[0060] Based on the semiconductor process chamber disclosed in this application, an embodiment of this application further discloses a semiconductor process device, which includes the semiconductor process chamber of the above embodiment. With such a configuration, the semiconductor process device can adjust the capacitance value of the capacitor device 400 through the capacitor adjustment device 500, change the RF bias coupled to the collimator 300, adjust the potential difference between the target material 200 and the collimator 300, and adjust the effect of the RF energy on the wafer, thereby achieving the effect of improving the uniformity of thin film deposition, improving the adjustability for different processes, and reducing maintenance costs.

[0061] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of this application, ordinary technicians in this field can also make many forms without departing from the purpose of this application and the scope of protection of the claims, all of which are within the protection of this application.

Claims

1. A semiconductor process chamber, characterized in that: The invention comprises a chamber body (100), a collimator (300), a capacitor device (400) and a capacitor adjustment device (500); a base (110) for carrying a wafer is provided in the chamber body (100); a target material installation position is provided on the top of the chamber body (100); the collimator (300) is located in the chamber body (100), and the collimator (300) is arranged between the base (110) and the target material installation position; The capacitor device (400) is electrically connected to the collimator (300), and the capacitor device (400) is grounded. The capacitance adjustment device (500) is connected to the capacitor device (400) to adjust the capacitance value of the capacitor device (400), thereby adjusting the capacitance value of the collimator (300) to the ground.

2. The semiconductor process chamber according to claim 1, wherein: The capacitance device (400) comprises a plurality of switch elements and a plurality of capacitors (420), the plurality of capacitors (420) are connected in parallel, each of the capacitors (420) is grounded, the switch elements are connected in series with the capacitors (420) in a one-to-one correspondence, and the capacitance adjustment device (500) comprises a control element, which controls the on / off state of each of the switch elements.

3. The semiconductor process chamber according to claim 2, wherein: Each of the switch elements includes a relay (410), and the capacitance adjustment device (500) further includes a power supply module, wherein the power supply module is respectively connected to each of the relays (410), and the control element controls the electrical connection state between the relay (410) and the power supply module, wherein the relay (410) has a contact. When the control element controls the relay (410) to be electrically connected to the power supply module, the contact is in an on state; when the control element controls the relay (410) to be electrically disconnected from the power supply module, the contact is in an off state.

4. The semiconductor process chamber according to claim 2, wherein: The capacitor device (400) further includes a conductive shell (430), each of the capacitors (420) and each of the switch elements are disposed within the conductive shell (430), and the conductive shell (430) is in contact with the chamber body (100), and each of the capacitors (420) is grounded through the chamber body (100).

5. The semiconductor process chamber according to claim 4, wherein: The capacitor device (400) further comprises a first metal conductive column (440) and a second metal conductive column (450), wherein the first metal conductive column (440) is respectively connected to each of the capacitors (420), a first end of the second metal conductive column (450) is connected to the first metal conductive column (440), and a second end of the second metal conductive column (450) is connected to the conductive shell (430) to be grounded through the conductive shell (430) and the chamber body (100).

6. The semiconductor process chamber according to claim 5, wherein: There are a plurality of second metal conductive pillars (450), and the second metal conductive pillars (450) are arranged at intervals in the extension direction of the first metal conductive pillar (440).

7. The semiconductor process chamber according to claim 2, wherein: The semiconductor process chamber further comprises a transfer device (600), wherein the transfer device (600) is arranged on a side wall of the chamber body (100), and the transfer device (600) is connected to the collimator (300) to support the collimator (300). The capacitor device (400) is located outside the chamber body (100), and the collimator (300) is electrically connected to the capacitor device (400) through the transfer device (600).

8. The semiconductor process chamber according to claim 7, wherein: One of the capacitor device (400) and the adapter device (600) is provided with a male plug, and the other is provided with a female plug (461); the male plug is plugged into and matched with the female plug (461) to electrically connect the adapter device (600) to the collimator (300).

9. The semiconductor process chamber according to claim 1, wherein: There are a plurality of capacitor devices (400), each capacitor device (400) is distributed at intervals along the circumference of the base (110), and each capacitor device (400) is grounded and electrically connected to the collimator (300).

10. A semiconductor process equipment, characterized in that: A semiconductor process chamber comprising any one of claims 1-9.

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