Semiconductor equipment and oxygen concentration monitoring system and method thereof

Abstract

The invention discloses a semiconductor device and an oxygen concentration monitoring system and method thereof, the semiconductor device comprises a workbench, and the system comprises a vacuum transmission module communicated with the workbench and used for vacuum transmission of products processed by the workbench; the vacuum transmission module is provided with a plurality of transmission separation valves; the oxygen concentration detection module is connected with the vacuum transmission module and is used for detecting the oxygen concentration in the vacuum transmission module; the concentration monitoring control module is respectively connected with the transmission separation valve and the oxygen concentration detection module, and is used for acquiring a switching signal of the transmission separation valve, receiving the oxygen concentration detected by the oxygen concentration detection module and judging whether the oxygen concentration exceeds a preset threshold value or not; if it is judged that the oxygen concentration in the vacuum transmission module exceeds the preset threshold value, whether an alarm signal indicating that the oxygen concentration exceeds the limit is generated or not is judged according to the switching signal of the transmission separation valve. The accuracy and reliability of oxygen concentration monitoring can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a semiconductor equipment and an oxygen concentration monitoring system and method thereof. Background Art

[0002] In the field of semiconductor thin film deposition, as process technology continues to advance towards sophistication, the vacuum requirements for many metal thin film processes are becoming increasingly stringent. Poor sealing of the vacuum transfer chamber can lead to elevated oxygen concentrations within the chamber, potentially oxidizing the deposited metal film during the transfer process, severely impacting product quality and causing financial losses. However, existing thin film deposition equipment suffers from monitoring deficiencies, making it impossible to monitor the oxygen concentration within the chamber in real time. Conventional vacuum gauges also struggle to accurately identify even small leaks through pressure changes.

[0003] Furthermore, the opening and closing of SLV valves at various locations within the vacuum transfer chamber can cause brief fluctuations in oxygen concentration. Existing oxygen concentration monitoring equipment can only detect concentration levels and cannot identify the specific opening and closing movements of SLV valves. This can lead to false alarms of elevated oxygen concentrations, impacting normal equipment operation. Furthermore, these existing monitoring devices are self-contained, with independent hardware and software, making them difficult to integrate with the equipment. This makes them inconvenient to use and maintain, and their costs are high. Summary of the Invention

[0004] Embodiments of the present invention provide a semiconductor device and an oxygen concentration monitoring system and method thereof, aiming to improve the accuracy and reliability of oxygen concentration monitoring.

[0005] In a first aspect, an embodiment of the present invention provides an oxygen concentration monitoring system for a semiconductor device, wherein the semiconductor device includes a workbench, and the system includes:

[0006] A vacuum transmission module, connected to the workbench, for vacuum transmission of products processed by the workbench; the vacuum transmission module is provided with a plurality of transmission separation valves;

[0007] an oxygen concentration detection module, connected to the vacuum transmission module, and configured to detect the oxygen concentration in the vacuum transmission module;

[0008] a concentration monitoring control module, connected to the transmission separation valve and the oxygen concentration detection module, respectively, for obtaining a switch signal of the transmission separation valve and receiving the oxygen concentration detected by the oxygen concentration detection module, and determining whether the oxygen concentration exceeds a preset threshold; and for determining whether to generate an oxygen concentration over-limit alarm signal based on the switch signal of the transmission separation valve if it is determined that the oxygen concentration in the vacuum transmission module exceeds the preset threshold.

[0009] Furthermore, the vacuum transmission module includes a vacuum transmission chamber and a vacuum atmosphere conversion chamber, the vacuum transmission chamber is connected to the workbench, and the transmission separation valve is arranged between the vacuum transmission chamber and the vacuum atmosphere conversion chamber.

[0010] Furthermore, the oxygen concentration detection module includes:

[0011] a first vacuum pumping pipeline connected to the vacuum transmission chamber;

[0012] The first oxygen detector is arranged on the first vacuum pipeline and connected to the concentration monitoring control module.

[0013] Furthermore, the oxygen concentration detection module further includes:

[0014] a second vacuum pumping pipeline, connected to the vacuum atmosphere conversion chamber;

[0015] The second oxygen detector is arranged on the second vacuum pipeline and connected to the concentration monitoring control module.

[0016] Furthermore, the concentration monitoring control module includes:

[0017] an industrial computer connected to the transmission separation valve and used to collect a switch signal of the transmission separation valve;

[0018] The oxygen concentration analysis module is connected to the oxygen concentration detection module and the industrial computer respectively, and is used to obtain the oxygen concentration detected by the oxygen concentration detection module and determine whether it exceeds a preset threshold; and is used to obtain the switching signal of the transmission separation valve and determine whether to generate an alarm signal indicating that the oxygen concentration exceeds the limit.

[0019] In a second aspect, an embodiment of the present invention provides a method for monitoring oxygen concentration in a semiconductor device, which is applied to the oxygen concentration monitoring system for the semiconductor device according to the first aspect, the method comprising:

[0020] Obtaining a switch signal of the transmission separation valve and detecting the oxygen concentration in the vacuum transmission module;

[0021] Determining whether the oxygen concentration exceeds a preset threshold;

[0022] If it is determined that the oxygen concentration in the vacuum transmission module exceeds a preset threshold, whether to generate an oxygen concentration exceeding limit alarm signal is determined according to the switch signal of the transmission separation valve.

[0023] Furthermore, the determining whether to generate an oxygen concentration exceeding limit alarm signal according to the switch signal of the transmission separation valve includes:

[0024] When the switch signal of the transmission separation valve is an open signal, no alarm signal of excessive oxygen concentration is generated;

[0025] When the switch signal of the transmission separation valve is an off signal, an alarm signal indicating that the oxygen concentration exceeds a limit is generated.

[0026] Furthermore, the alarm signal indicates that a leak has occurred in the vacuum transmission module.

[0027] Furthermore, after the step of generating an alarm signal indicating that the oxygen concentration exceeds a limit when the switch signal of the transmission separation valve is an off signal, the method further comprises:

[0028] Use helium mass spectrometry leak detection technology to locate leaks.

[0029] In a third aspect, an embodiment of the present invention provides a semiconductor device, including the oxygen concentration monitoring system for the semiconductor device as described in the first aspect.

[0030] Embodiments of the present invention provide a semiconductor device and its oxygen concentration monitoring system and method. The semiconductor device includes a workbench. The system comprises: a vacuum transfer module connected to the workbench for vacuum transfer of products processed on the workbench; the vacuum transfer module is provided with multiple transfer separation valves; an oxygen concentration detection module connected to the vacuum transfer module for detecting the oxygen concentration in the vacuum transfer module; a concentration monitoring and control module connected to the transfer separation valves and the oxygen concentration detection module, respectively, for obtaining on / off signals from the transfer separation valves and receiving the oxygen concentration detected by the oxygen concentration detection module, and determining whether the oxygen concentration exceeds a preset threshold; and, if the oxygen concentration in the vacuum transfer module exceeds the preset threshold, determining whether to generate an oxygen concentration over-limit alarm signal based on the on / off signal from the transfer separation valves. The embodiments of the present invention integrate the oxygen concentration detection module with the workbench of the semiconductor device, such as a thin film deposition process machine, to achieve more convenient use and maintenance and reduce costs. Furthermore, the embodiments of the present invention utilize the oxygen concentration detection module to detect oxygen concentration abnormalities within the chamber, thereby preventing product quality from being affected by elevated oxygen concentration and reducing costs. In addition, the embodiment of the present invention can detect the switching signal of the transmission separation valve while monitoring the oxygen concentration in the chamber in real time. This can avoid false alarms caused by oxygen concentration fluctuations caused by the switching action of the transmission separation valve, thereby affecting the normal operation of the machine, thereby achieving the purpose of improving the accuracy and reliability of oxygen concentration monitoring. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0032] Figure 1 A schematic structural diagram of an oxygen concentration monitoring system for semiconductor equipment provided by an embodiment of the present invention;

[0033] Figure 2 This is a test example diagram of an oxygen concentration monitoring system for semiconductor equipment provided by an embodiment of the present invention;

[0034] Figure 3 A schematic flow chart of a method for monitoring oxygen concentration in a semiconductor device provided by an embodiment of the present invention.

[0035] Markings in the figure:

[0036] 100. Vacuum transmission chamber; 101. Transmission separation valve; 102. Vacuum atmosphere conversion chamber; 1031. First vacuum pumping pipeline; 1032. Second vacuum pumping pipeline; 1041. First oxygen detector; 1042. Second oxygen detector; 105. Oxygen concentration analysis module; 106. Industrial computer. DETAILED DESCRIPTION

[0037] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0038] It will be understood that when used in this specification and the appended claims, the terms “comprises” and “comprising” indicate the presence of described features, integers, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof.

[0039] It should also be understood that the terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the present invention. As used in the specification and appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms unless the context clearly indicates otherwise.

[0040] It should be further understood that the term "and / or" used in the present description and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.

[0041] See below Figure 1 An embodiment of the present invention provides an oxygen concentration monitoring system for a semiconductor device, wherein the semiconductor device includes a workbench, and the system includes:

[0042] A vacuum transmission module, connected to the workbench, for vacuum transmission of products processed on the workbench; the vacuum transmission module is provided with a plurality of transmission separation valves 101;

[0043] an oxygen concentration detection module, connected to the vacuum transmission module, and configured to detect the oxygen concentration in the vacuum transmission module;

[0044] The concentration monitoring control module is connected to the transmission separation valve 101 and the oxygen concentration detection module respectively, and is used to obtain the switching signal of the transmission separation valve 101 and receive the oxygen concentration detected by the oxygen concentration detection module, and determine whether the oxygen concentration exceeds a preset threshold; and is used to determine whether to generate an oxygen concentration over-limit alarm signal based on the switching signal of the transmission separation valve 101 if it is determined that the oxygen concentration in the vacuum transmission module exceeds the preset threshold.

[0045] In this embodiment, the oxygen concentration monitoring system is used in semiconductor equipment and specifically includes a vacuum transfer module, an oxygen concentration detection module, and a concentration monitoring and control module. The vacuum transfer module is equipped with multiple transfer separation valves 101, which communicate with the workbench to vacuum transfer processed products. The oxygen concentration detection module detects the oxygen concentration within the vacuum transfer module. The concentration monitoring and control module determines whether the detected oxygen concentration exceeds a preset threshold based on the oxygen concentration. If the oxygen concentration exceeds the preset threshold, the system further determines whether to generate an alarm signal based on the on / off signal of the transfer separation valves 101, thereby determining whether a leak has occurred in the vacuum transfer module.

[0046] This embodiment integrates an oxygen concentration detection module with a semiconductor equipment workbench, such as a thin film deposition process machine, to achieve enhanced ease of use and maintenance, while reducing costs. Furthermore, this embodiment uses the oxygen concentration detection module to detect oxygen concentration, enabling timely detection of abnormal oxygen concentration within the chamber, thereby preventing product quality impacts caused by elevated oxygen concentration and reducing costs. Furthermore, while simultaneously monitoring the oxygen concentration within the chamber in real time, this embodiment can also detect the on / off signal of the transmission separation valve 101. This prevents false alarms caused by oxygen concentration fluctuations caused by the on / off operation of the transmission separation valve 101, which could affect the normal operation of the machine, thereby improving the accuracy and reliability of oxygen concentration monitoring.

[0047] It's worth noting that the oxygen concentration monitoring system of this embodiment is not only applicable to semiconductor equipment but can also be widely used in other industrial fields requiring precise control of oxygen concentration, such as vacuum coating and vacuum heat treatment. By adopting the oxygen concentration monitoring system of this embodiment, companies in these fields can also achieve real-time monitoring of oxygen concentration and accurate early warning, thereby improving product quality and production efficiency, and reducing production costs and safety risks.

[0048] In a specific embodiment, when the switch signal of the transmission separation valve 101 is an open signal, no alarm signal of excessive oxygen concentration is generated;

[0049] When the switch signal of the transmission separation valve 101 is an off signal, an alarm signal indicating that the oxygen concentration exceeds the limit is generated.

[0050] Specifically, if the oxygen concentration exceeds the preset threshold, and the transfer isolation valve 101 is open, the fluctuation in oxygen concentration is normal, likely due to product transfer, and therefore no alarm signal is generated. However, if the transfer isolation valve 101 is closed but the oxygen concentration exceeds the preset threshold, this is likely due to a leak in the vacuum transfer module, allowing oxygen to enter. In this case, the system generates an alarm signal, prompting operators to conduct prompt inspection and repairs. This design avoids false alarms and improves monitoring accuracy.

[0051] Here, the transmission separation valve 101 is an SLV separation valve. The SLV separation valve refers to a valve used to separate different vacuum areas in a vacuum transmission system. When it is open, it allows products to pass through, and when it is closed, it isolates the two vacuum areas. In the oxygen concentration monitoring system for semiconductor equipment of this embodiment, the state of the SLV separation valve (open or closed) is used as an important basis for judging whether an oxygen concentration over-limit alarm signal is generated. When the SLV separation valve is closed and the oxygen concentration exceeds the preset threshold, the system determines that there may be a leak in the vacuum transmission module, thereby generating an alarm signal so that the operator can take timely measures to investigate and repair it. This design improves the accuracy and reliability of oxygen concentration monitoring, which helps to ensure the normal operation of semiconductor equipment and product quality.

[0052] In one embodiment, the vacuum transmission module includes a vacuum transmission chamber 100 and a vacuum atmosphere conversion chamber 102 , the vacuum transmission chamber 100 is connected to the workbench, and the transmission separation valve 101 is arranged between the vacuum transmission chamber 100 and the vacuum atmosphere conversion chamber 102 .

[0053] The vacuum transfer chamber 100 is used to transfer processed products under vacuum conditions, while the vacuum atmosphere conversion chamber 102 is used to convert between vacuum and atmospheric environments, ensuring safe and stable product transfer in different environments. The transfer separation valve 101 allows for flexible isolation and connection between the vacuum transfer chamber 100 and the vacuum atmosphere conversion chamber 102, meeting the needs of different semiconductor equipment process steps.

[0054] In actual applications, the vacuum transfer module may also include an equipment front-end module EFEM and a load lock chamber Load Lock, etc. In addition to being arranged between the vacuum transfer chamber 100 and the vacuum atmosphere conversion chamber 102, the transfer separation valve 101 may also be arranged at the upper and lower ends of the equipment front-end module EFEM, between the vacuum transfer chamber 100 and the process treatment unit connected thereto (Transfer Chamber), and at the upper and lower ends of the load lock chamber Load Lock.

[0055] In one embodiment, the oxygen concentration detection module includes:

[0056] A first vacuum pumping line 1031 is connected to the vacuum transfer chamber 100;

[0057] The first oxygen detector 1041 is provided on the first vacuum line 1031 and is connected to the concentration monitoring control module.

[0058] In this embodiment, the oxygen concentration detection module includes a first vacuum line 1031 connected to the vacuum transfer chamber 100 and a first oxygen detector 1041 disposed on the first vacuum line 1031. The oxygen concentration detection module extracts gas from the vacuum transfer chamber 100 to obtain oxygen concentration information within the chamber. Furthermore, since the oxygen concentration detection module is also connected to the concentration monitoring and control module, the latter can perform comprehensive assessments and processing based on this oxygen concentration information and the on / off signal from the transfer isolation valve 101.

[0059] Furthermore, the oxygen concentration detection module further includes:

[0060] A second vacuum pumping line 1032 connected to the vacuum atmosphere conversion chamber 102;

[0061] The second oxygen detector 1042 is disposed on the second vacuum line 1032 and is connected to the concentration monitoring control module.

[0062] That is to say, the oxygen concentration detection module described in this embodiment also includes a second vacuum pumping line 1032 connected to the vacuum atmosphere conversion chamber 102, and a second oxygen detector 1042 arranged on the second vacuum pumping line 1032. Through the first vacuum pumping line 1031 and the second vacuum pumping line 1032, the oxygen concentration detection module can monitor the oxygen concentration in the vacuum transfer chamber 100 and the vacuum atmosphere conversion chamber 102 respectively, ensuring a comprehensive grasp of the oxygen concentration in different areas of the semiconductor equipment. At the same time, the first oxygen detector 1041 and the second oxygen detector 1042 are both connected to the concentration monitoring control module, so that the concentration monitoring control module can obtain and analyze the oxygen concentration data in real time, thereby more accurately switching the signal and deciding whether to generate an alarm signal accordingly. Such a design not only improves the accuracy and reliability of oxygen concentration monitoring, but also provides a strong guarantee for the stable operation of semiconductor equipment.

[0063] In one embodiment, the concentration monitoring control module includes:

[0064] An industrial computer 106 is connected to the transmission separation valve 101 and is used to collect a switch signal of the transmission separation valve 101;

[0065] The oxygen concentration analysis module 105 is connected to the oxygen concentration detection module and the industrial computer 106 respectively, and is used to obtain the oxygen concentration detected by the oxygen concentration detection module and determine whether it exceeds a preset threshold; and is used to obtain the switching signal of the transmission separation valve 101 and determine whether to generate an alarm signal indicating that the oxygen concentration exceeds the limit.

[0066] In this embodiment, the concentration monitoring and control module is mainly composed of an industrial computer 106 and an oxygen concentration analysis module 105. The industrial computer 106 is connected to the transmission separation valve 101 to collect its switch signal. The oxygen concentration analysis module 105 is connected to the oxygen concentration detection module and the industrial computer 106 to obtain the detected oxygen concentration, determine whether it exceeds the preset threshold, and determine whether to generate an alarm signal for excessive oxygen concentration based on the switch signal of the transmission separation valve 101. In actual applications, the alarm threshold of the oxygen concentration can be set through the EC on the industrial computer 106. When the oxygen concentration rises and exceeds the alarm setting value, it is determined whether there is an SLV valve opening signal. If there is an opening signal, the alarm will not be executed for the excessive oxygen concentration and monitoring will continue. If there is no opening signal, the alarm will be shut down for further detection. In addition, after the oxygen concentration analysis module 105 integrates and analyzes the oxygen concentration data with the switch action signals of the valves at various positions in the chamber, it can be transmitted back to the industrial computer 106 and the oxygen concentration change curve can be displayed in real time on the operation interface of the industrial computer 106, such as Figure 2 As shown, the black line is the real-time O2 concentration change curve, the blue line is the pressure change curve of the vacuum transfer chamber, and the vertical bars of different colors represent the SLV door opening signals at various positions.

[0067] In this way, the oxygen concentration in the vacuum transfer chamber can be monitored in real time and displayed on the operation interface. At the same time, historical data can be queried to facilitate the analysis of the changing trend of the oxygen concentration. In addition, the oxygen concentration analysis module 105 can also compare the analysis results with the preset process parameters and automatically adjust the working state of the semiconductor equipment to ensure product quality and production efficiency. For example, when the oxygen concentration exceeds the preset threshold, the oxygen concentration analysis module 105 can automatically adjust the process parameters of the semiconductor equipment, such as lowering the heating temperature of the workbench or increasing the frequency of vacuuming to reduce the oxygen concentration and restore it to a safe range. Such automated adjustment not only improves production efficiency, but also helps to ensure the stable operation of semiconductor equipment and the consistency of product quality.

[0068] In addition, the concentration monitoring and control module of an embodiment of the present invention may also include an alarm display module for displaying an alarm message when an alarm signal indicating an oxygen concentration exceeding the limit is generated. The alarm display module can be connected to the industrial computer 106, receive the alarm signal sent by the industrial computer 106, and alert the operator through audio, light, and other means. In a specific implementation, the alarm display module can be located on the operation interface of the semiconductor device. When the oxygen concentration exceeding the limit alarm signal is generated, the alarm display module will pop up an alarm window on the operation interface, displaying an alarm message such as "Oxygen concentration exceeding the limit, please check the vacuum transmission module," and simultaneously emitting sound and light prompts to attract the operator's attention. Based on the alarm message, the operator can promptly inspect and repair the semiconductor device to avoid the impact of abnormal oxygen concentration on product quality and production efficiency. This design not only improves the accuracy and reliability of oxygen concentration monitoring but also provides a strong guarantee for the stable operation of the semiconductor device.

[0069] like Figure 3 As shown, a flow chart of a method for monitoring oxygen concentration of a semiconductor device provided by an embodiment of the present invention is shown. The method is applied to the oxygen concentration monitoring system of the semiconductor device as described above, and the method specifically includes steps S101 to S103.

[0070] Step S101, obtaining a switch signal of the transmission separation valve 101 and detecting the oxygen concentration in the vacuum transmission module;

[0071] Step S102: determining whether the oxygen concentration exceeds a preset threshold;

[0072] Step S103 : If it is determined that the oxygen concentration in the vacuum transmission module exceeds a preset threshold, whether to generate an oxygen concentration exceeding limit alarm signal is determined according to the switch signal of the transmission separation valve 101 .

[0073] In this embodiment, the oxygen concentration in the vacuum transmission module is first detected, and then a switch signal is switched according to the detection result. If it exceeds a threshold, the switch signal of the transmission separation valve 101 is used to determine whether to issue an oxygen concentration over-limit alarm signal.

[0074] This embodiment integrates an oxygen concentration detection module with a semiconductor equipment workbench, such as a thin film deposition process machine, to achieve enhanced ease of use and maintenance, while reducing costs. Furthermore, this embodiment uses the oxygen concentration detection module to detect oxygen concentration, enabling timely detection of abnormal oxygen concentration within the chamber, thereby preventing product quality impacts caused by elevated oxygen concentration and reducing costs. Furthermore, while simultaneously monitoring the oxygen concentration within the chamber in real time, this embodiment can also detect the on / off signal of the transmission separation valve 101. This prevents false alarms caused by oxygen concentration fluctuations caused by the on / off operation of the transmission separation valve 101, which could affect the normal operation of the machine, thereby improving the accuracy and reliability of oxygen concentration monitoring.

[0075] Specifically, determining whether to generate an oxygen concentration exceeding limit alarm signal according to the switch signal of the transmission separation valve 101 includes:

[0076] When the switch signal of the transmission separation valve 101 is an open signal, no alarm signal of excessive oxygen concentration is generated;

[0077] When the switch signal of the transmission separation valve 101 is an off signal, an alarm signal indicating that the oxygen concentration exceeds the limit is generated.

[0078] If the oxygen concentration exceeds the preset threshold, and the transfer isolation valve 101 is open, the fluctuation in oxygen concentration is normal, likely due to product transfer, and no alarm signal is generated. However, if the transfer isolation valve 101 is closed but the oxygen concentration exceeds the preset threshold, this is likely due to a leak in the vacuum transfer module, allowing oxygen to enter. In this case, an alarm signal is generated, prompting the operator to conduct prompt inspection and repair. This avoids false alarms and improves monitoring accuracy.

[0079] Here, the alarm signal indicates a leak in the vacuum transmission module—that is, a warning message issued when the oxygen concentration exceeds the safe range and the transmission separation valve 101 is closed. Upon receiving this alarm signal, the system automatically triggers a series of countermeasures, such as suspending the operation of semiconductor equipment and shutting down related process steps to prevent further increases in oxygen concentration from adversely affecting product quality. Furthermore, the alarm signal can also be sent to the operator's monitoring terminal, alerting the operator through various means such as sound and light, ensuring that the operator can promptly detect and address the problem of excessive oxygen concentration.

[0080] In one embodiment, after the step of generating an alarm signal indicating that the oxygen concentration exceeds a limit when the switch signal of the transmission separation valve 101 is an off signal, the following steps are performed:

[0081] Use helium mass spectrometry leak detection technology to locate leaks.

[0082] This embodiment uses helium mass spectrometry leak detection technology to accurately locate leaks in vacuum transmission modules, facilitating rapid repairs by maintenance personnel and improving the operational efficiency and reliability of semiconductor equipment. Helium mass spectrometry leak detection is a helium-based mass spectrometry analysis technique that locates and identifies leaks in vacuum systems by detecting helium leaks. It boasts high sensitivity, precision, and efficiency, enabling rapid and accurate identification of leaks in complex semiconductor equipment environments, thus avoiding equipment failures and product quality issues caused by excessive oxygen concentrations.

[0083] Of course, in other embodiments, other technical means may also be used to check the location of leaks, such as ultrasonic leak detection technology, infrared thermal imaging leak detection technology, etc. These technologies have their own characteristics and can be selected according to the specific semiconductor equipment environment and needs. Ultrasonic leak detection technology locates the leak by detecting the ultrasonic signal generated by the leak, and is suitable for leak detection in large equipment and inaccessible areas. Infrared thermal imaging leak detection technology uses an infrared thermal imager to detect temperature changes at the leak site, and is suitable for leak detection in high or low temperature environments. The application of these technical means further improves the reliability and flexibility of the oxygen concentration monitoring system for semiconductor equipment, providing a strong guarantee for the stable operation of semiconductor equipment.

[0084] This embodiment further provides a semiconductor device, including the oxygen concentration monitoring system for the semiconductor device as described above.

[0085] The semiconductor device can effectively monitor and manage the oxygen concentration in the semiconductor device by monitoring the oxygen concentration in the vacuum transmission module in real time and determining whether to generate an alarm signal based on the oxygen concentration and the switching signal of the transmission separation valve 101, thereby improving the operating efficiency and reliability of the device.

[0086] The various embodiments in the specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same and similar parts between the various embodiments can be referred to each other. For the system disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part description. It should be pointed out that for ordinary technicians in this technical field, without departing from the principles of this application, several improvements and modifications can be made to this application, and these improvements and modifications also fall within the scope of protection of the claims of this application.

[0087] It should also be noted that, in this specification, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus comprising the element.

Claims

1. An oxygen concentration monitoring system for a semiconductor device, wherein the semiconductor device includes a workbench, characterized in that: The system comprises: A vacuum transmission module, connected to the workbench, for vacuum transmission of products processed by the workbench; the vacuum transmission module is provided with a plurality of transmission separation valves; an oxygen concentration detection module, connected to the vacuum transmission module, and configured to detect the oxygen concentration in the vacuum transmission module; a concentration monitoring control module, connected to the transmission separation valve and the oxygen concentration detection module, respectively, for obtaining a switch signal of the transmission separation valve and receiving the oxygen concentration detected by the oxygen concentration detection module, and determining whether the oxygen concentration exceeds a preset threshold; and for determining whether to generate an oxygen concentration over-limit alarm signal based on the switch signal of the transmission separation valve if it is determined that the oxygen concentration in the vacuum transmission module exceeds the preset threshold.

2. The oxygen concentration monitoring system for semiconductor equipment according to claim 1, wherein: The vacuum transmission module includes a vacuum transmission chamber and a vacuum atmosphere conversion chamber. The vacuum transmission chamber is communicated with the workbench. The transmission separation valve is arranged between the vacuum transmission chamber and the vacuum atmosphere conversion chamber.

3. The oxygen concentration monitoring system for semiconductor equipment according to claim 2, wherein: The oxygen concentration detection module includes: a first vacuum pumping pipeline connected to the vacuum transmission chamber; The first oxygen detector is arranged on the first vacuum pipeline and connected to the concentration monitoring control module.

4. The oxygen concentration monitoring system for semiconductor equipment according to claim 3, wherein: The oxygen concentration detection module also includes: a second vacuum pumping pipeline, connected to the vacuum atmosphere conversion chamber; The second oxygen detector is arranged on the second vacuum pipeline and connected to the concentration monitoring control module.

5. The oxygen concentration monitoring system for semiconductor equipment according to claim 1, wherein: The concentration monitoring control module includes: an industrial computer connected to the transmission separation valve and used to collect a switch signal of the transmission separation valve; The oxygen concentration analysis module is connected to the oxygen concentration detection module and the industrial computer respectively, and is used to obtain the oxygen concentration detected by the oxygen concentration detection module and determine whether it exceeds a preset threshold; and is used to obtain the switching signal of the transmission separation valve and determine whether to generate an alarm signal indicating that the oxygen concentration exceeds the limit.

6. A method for monitoring oxygen concentration in a semiconductor device, applied to the oxygen concentration monitoring system for a semiconductor device according to any one of claims 1 to 5, characterized in that: The method comprises: Obtaining a switch signal of the transmission separation valve and detecting the oxygen concentration in the vacuum transmission module; Determining whether the oxygen concentration exceeds a preset threshold; If it is determined that the oxygen concentration in the vacuum transmission module exceeds a preset threshold, whether to generate an oxygen concentration exceeding limit alarm signal is determined according to the switch signal of the transmission separation valve.

7. The method for monitoring oxygen concentration in semiconductor equipment according to claim 6, wherein: The step of determining whether to generate an oxygen concentration exceeding limit alarm signal according to the switch signal of the transmission separation valve includes: When the switch signal of the transmission separation valve is an open signal, no alarm signal of excessive oxygen concentration is generated; When the switch signal of the transmission separation valve is an off signal, an alarm signal indicating that the oxygen concentration exceeds a limit is generated.

8. The method for monitoring oxygen concentration in semiconductor equipment according to claim 6, wherein: The alarm signal is a signal indicating a leak in the vacuum transmission module.

9. The method for monitoring oxygen concentration in semiconductor equipment according to claim 8, wherein: After the step of generating an alarm signal indicating that the oxygen concentration exceeds a limit when the switch signal of the transmission separation valve is an off signal, the method further comprises: Use helium mass spectrometry leak detection technology to locate leaks.

10. A semiconductor device, comprising the oxygen concentration monitoring system for semiconductor device according to any one of claims 1 to 5.

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