Substrate processing apparatus

Abstract

The invention provides a substrate processing device which comprises a control mechanism. A clamping mechanism; a nozzle mechanism; a rotation driving mechanism; a heating mechanism; the temperature monitoring mechanism comprises a first temperature monitoring unit, and the first temperature monitoring unit is configured to monitor the temperature of the substrate when the liquid spray head moves to a certain area above the substrate in the process that the liquid spray head moves from the center of the substrate to the edge of the substrate in the radial direction of the substrate and continuously sprays liquid to the surface of the substrate; monitoring the temperature of a liquid film formed in a substrate surface area corresponding to a certain area, and sending the temperature to a control mechanism; and the control mechanism receives the temperature and regulates and controls the heating temperature of the heating mechanism on the surface area of the substrate corresponding to a certain area based on the temperature. The temperature monitoring unit is arranged for temperature detection, the characteristic pattern structure on the substrate is prevented from being damaged in the drying process, accurate control over the surface tension and evaporation rate of isopropyl alcohol or other drying formula liquid medicine on the surface of the substrate in the drying technological process is improved, and the drying effect is guaranteed.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a substrate processing device. Background Art

[0002] Integrated circuit manufacturing involves processes such as photolithography, etching, deposition, chemical mechanical polishing (CMP), and cleaning. Cleaning, designed to remove various contaminants generated during substrate processing, is the most frequently used process in IC manufacturing, operating throughout the entire IC manufacturing process. Contaminants are any substances introduced during IC manufacturing that can compromise chip yield and electrical performance. These contaminants include particles, organic matter, metals, and native oxide layers.

[0003] Semiconductor cleaning technologies are primarily categorized into wet cleaning and dry cleaning processes. In the wet cleaning process, the substrate is typically mounted on a rotatable substrate fixture. Chemical solutions and deionized water are then applied to the rotating substrate surface. After the wet etching or cleaning process is complete, the substrate is dried.

[0004] Traditional drying processes mostly use nitrogen purging or isopropyl alcohol (IPA) combined with high-speed rotation of the substrate for drying. However, with the development of advanced integrated circuit process technology, feature sizes are constantly shrinking. During the drying process, the size, aspect ratio, and density of the feature pattern structures on the substrate vary, as do their positions from the rotation axis. The flow and evaporation rates of the liquid in the pattern structures attached to the substrate also vary. Under the action of liquid surface tension, adjacent pattern structures may be subjected to uneven force, ultimately leading to damage such as collapse, adhesion, and deformation of the feature pattern structures on the substrate, which in turn causes device failure, affects chip yield, and results in product scrapping.

[0005] In order to prevent the characteristic pattern structure on the substrate from being damaged during the drying process, it is particularly important to accurately control the surface tension and evaporation rate of isopropyl alcohol (IPA) or other drying formula liquid on the substrate surface during the drying process. Summary of the Invention

[0006] In order to prevent the characteristic pattern structure on the substrate from being damaged during the drying process and to improve the precise control of the surface tension and evaporation rate of isopropyl alcohol or other drying formula liquid on the substrate surface during the drying process, the present invention proposes a substrate processing device.

[0007] A substrate processing device, comprising:

[0008] Control agencies;

[0009] a clamping mechanism configured to clamp the substrate during a process;

[0010] A nozzle mechanism includes a liquid nozzle and a swing arm, wherein the liquid nozzle is configured to distribute liquid to a surface of a substrate placed on a clamping mechanism; the swing arm is configured to supply liquid to the liquid nozzle, and the swing arm can drive the liquid nozzle to reciprocate between the center and the edge of the substrate in a radial direction of the substrate;

[0011] a rotation drive mechanism, configured to drive the clamping mechanism to rotate;

[0012] a heating mechanism configured to heat the substrate clamped by the clamping mechanism;

[0013] The temperature monitoring mechanism includes a first temperature monitoring unit, which is configured to: during the process of the liquid nozzle moving from the center of the substrate to the edge of the substrate along the radial direction of the substrate and continuously spraying liquid onto the surface of the substrate, when the liquid nozzle moves to a certain area above the substrate, monitor the temperature of the liquid film formed in the substrate surface area corresponding to the certain area, and send the temperature to the control mechanism; the control mechanism is configured to receive the temperature and, based on the temperature, regulate the heating temperature of the substrate surface area corresponding to the certain area by the heating mechanism.

[0014] According to a specific implementation of the embodiment of the present application, the temperature monitoring mechanism further includes a second temperature monitoring unit;

[0015] In the process of the liquid nozzle moving from the center of the substrate to the edge of the substrate along the radial direction of the substrate and continuously spraying liquid onto the surface of the substrate, when the liquid nozzle leaves an area N above the substrate and moves to the next area N+1 in the direction away from the center of the substrate, the second temperature monitoring unit is configured to monitor the temperature of the substrate surface area corresponding to the area N and store the monitored temperature.

[0016] According to a specific implementation of the embodiment of the present application, the second temperature monitoring unit is arranged on the swing arm.

[0017] According to a specific implementation of an embodiment of the present application, the temperature monitoring mechanism further includes a third temperature monitoring unit, which is configured to monitor the real-time temperature of various locations on the back of the heating mechanism and transmit the real-time temperature to the control mechanism.

[0018] According to a specific implementation of the embodiment of the present application, the control mechanism is configured as follows:

[0019] The real-time temperature monitored by the third temperature monitoring unit is received in real time. When the value of the real-time temperature is greater than a preset value, the control mechanism issues an alarm message.

[0020] According to a specific implementation of the embodiment of the present application, the heating mechanism includes a mounting plate and a plurality of heating elements, and the plurality of heating elements are arranged on the mounting plate.

[0021] According to a specific implementation of the embodiment of the present application, the heating element includes an LED lamp bead;

[0022] The LED lamp beads are arranged on the circumference of a plurality of concentric circles with the center of the mounting plate as the center.

[0023] According to a specific implementation of the embodiment of the present application, the plurality of heating elements are divided into a plurality of heating element groups; and the heating power of each heating element group can be independently controlled.

[0024] According to a specific implementation of an embodiment of the present application, the heating element includes an edge heating element located in the edge area of ​​the mounting plate, and the edge heating element is arranged at an angle. The inclined heating element is used to cover the edge area of ​​the mounting plate in the heating area of ​​the inclined heating element.

[0025] According to a specific implementation of the embodiment of the present application, the edge area of ​​the mounting plate is an area between the edge of the mounting plate and a circumference at a specified distance from the edge of the mounting plate to the center of the mounting plate.

[0026] According to a specific implementation of the embodiment of the present application, the edge heating element is tilted at an angle of 0.1°-60°.

[0027] According to a specific implementation of an embodiment of the present application, the wavelength range of the light emitted by the LED lamp bead is: [200, 380] nm or (650, 2500] nm.

[0028] According to a specific implementation of the embodiment of the present application, the control mechanism is configured as follows:

[0029] In the process of the liquid nozzle moving from the center of the substrate to the edge of the substrate along the radial direction of the substrate and continuously spraying liquid onto the surface of the substrate, when the liquid nozzle moves to a certain area above the substrate, the heating element located on the radius of the mounting plate corresponding to the certain area is controlled to a second power, and the heating element that reaches the second power heats the surface area of ​​the substrate corresponding to the certain area to a second temperature.

[0030] According to a specific implementation of the embodiment of the present application, the control mechanism is further configured to:

[0031] When the first temperature monitoring unit monitors that the temperature of the liquid film formed in the substrate surface area is lower than the second temperature, the control mechanism controls the heating mechanism to increase the heating power to increase the heating temperature of the substrate surface area.

[0032] According to a specific implementation of the embodiment of the present application, before the liquid ejecting head dispenses liquid onto the surface of the substrate, the control mechanism is configured as follows:

[0033] The heating power of the heating element is controlled to be a first heating power, and the heating element that reaches the first heating power heats the substrate to a first temperature.

[0034] According to a specific implementation of the embodiment of the present application, the first temperature monitoring unit is arranged on the swing arm.

[0035] According to a specific implementation of the embodiment of the present application, the heating mechanism includes a heating disk and a fluid delivery unit;

[0036] The heating plate is provided with at least two cavities along the radial direction, each cavity being distributed at a different radius, a fluid inlet hole being provided at the bottom of the cavity, a fluid outlet hole being provided at the top of the cavity, and the fluid inlet hole being connected to the fluid delivery pipe;

[0037] The fluid delivery unit is connected to the fluid delivery pipe, and is configured to deliver fluid to the heating disk. A heater is provided on the fluid delivery unit, and the heater is used to heat the fluid in the fluid delivery unit.

[0038] According to a specific implementation of an embodiment of the present application, the cooling mechanism includes a cooling portion, which is arranged on the mounting plate and located below the heating element, and the cooling portion is configured to reduce the temperature of the heating element.

[0039] According to a specific implementation method of an embodiment of the present application, it also includes: a plate, the light emitted by the heating element can penetrate the plate, the plate is arranged between the heating mechanism and the substrate, the plate is fixedly connected to the clamping mechanism, and when the rotation drive mechanism drives the clamping mechanism to rotate, the plate rotates together with the clamping mechanism.

[0040] The present invention provides a first temperature monitoring unit that can monitor the temperature of the liquid film distributed by the liquid nozzle to the surface of the substrate in real time as the liquid nozzle moves and provide feedback, so that the temperature of the liquid sprayed by the liquid nozzle can be monitored more accurately; at the same time, based on the monitoring results of the first temperature monitoring unit, the control mechanism performs real-time control to adjust the heating power of the heating element group corresponding to the area where the liquid film temperature on the substrate surface is lower than the second temperature, so as to quickly and accurately regulate the heating temperature of the area monitored in real time by the first temperature monitoring unit, so as to make the drying process and drying results more controllable.

[0041] The second temperature monitoring unit monitors the substrate's temperature immediately after drying and generates statistics, assisting in monitoring the process safety of the substrate processing apparatus. After a substrate completes its processing, it is removed from the apparatus for inspection. If any pattern structure collapse is detected in a specific area of ​​the substrate, a review can be conducted based on the data recorded by the second temperature monitoring unit. This provides a clearer target for maintenance, improving efficiency while ensuring substrate processing yield.

[0042] By setting up a third temperature monitoring unit to monitor the real-time temperature of various locations on the back of the heating element group of the heating mechanism, and transmitting the real-time temperature to the control mechanism, the working status of the heating element group can be determined in real time. Once the status is abnormal, an alarm message will be sent to notify the staff to carry out timely maintenance.

[0043] Other features and advantages of the present invention will be described in the following description, and in part will become apparent from the description, or will be understood by practicing the present invention. The purpose and other advantages of the present invention can be realized and obtained by the structures pointed out in the description and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following is a brief introduction to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0045] Figure 1 shows a schematic diagram of the three-dimensional structure of a substrate processing device according to embodiment 1 of the present invention;

[0046] Figure 2a It shows a schematic diagram of a top view of a heating mechanism according to an embodiment of the present invention;

[0047] Figure 2b It shows a bottom view structural schematic diagram of a heating mechanism according to an embodiment of the present invention;

[0048] Figure 3 shows a schematic structural diagram of a heating mechanism according to embodiment 2 of the present invention;

[0049] Figure 4 shows a schematic diagram of the three-dimensional structure of a substrate processing device according to embodiment 3 of the present invention;

[0050] Figure 5 A simplified schematic diagram of a substrate processing apparatus according to Embodiment 3 of the present invention is shown;

[0051] Figure 6 A simplified schematic diagram of a substrate processing apparatus according to a fourth embodiment of the present invention is shown;

[0052] Figure 7 shows a schematic structural diagram of a cooling unit according to embodiment 5 of the present invention;

[0053] Figure 8 A schematic structural diagram of a sealing ring provided between the cooling portion and the mounting plate according to embodiment 5 of the present invention is shown;

[0054] Figure 9 shows a schematic structural diagram of a cooling unit according to another embodiment of the present invention; and

[0055] Figure 10 A structural schematic diagram of a heating mechanism according to embodiment 6 of the present invention is shown. DETAILED DESCRIPTION

[0056] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0057] Example 1

[0058] Please refer to Figure 1 The present invention provides a substrate processing device, which includes a clamping mechanism 200, a rotation driving mechanism 300, a heating mechanism 400, a nozzle mechanism 500, a temperature monitoring mechanism, and a control mechanism 800.

[0059] The clamping mechanism 200 is used to clamp the substrate 100 and maintain it in a horizontal position during the process. The clamping mechanism 200 also includes a support portion 202 and multiple positioning pins 201, which are arranged on the edge of the support portion 202. During the process, when the clamping mechanism 200 clamps the substrate 100, the multiple positioning pins 201 clamp and secure the substrate 100, thereby maintaining the substrate 100 in a horizontal position.

[0060] The rotation drive mechanism 300 is used to drive the support portion 202 to rotate. The rotation drive mechanism 300 includes a transmission mechanism 301 and a drive mechanism 302. In this embodiment, the transmission mechanism 301 is illustratively a drive shaft, and the drive mechanism 302 can be selected based on actual operational requirements. In this embodiment, a stepper motor is illustratively selected as the drive mechanism 302. During the process, the rotation drive mechanism 300 drives the support portion 202 to rotate the substrate 100 about a vertical line passing through the center of the substrate 100.

[0061] The heating mechanism 400 is disposed between the support portion 202 and the substrate 100. Figure 1 and references Figure 2a and Figure 2b , Figure 2a It shows a schematic diagram of a top view of a heating mechanism according to an embodiment of the present invention; Figure 2b A schematic diagram of the heating mechanism according to an embodiment of the present invention is shown from above. The heating mechanism 400 includes a mounting plate 401 and multiple heating elements 402, which can be divided into several heating element groups 4021. The mounting plate 401 is configured to support the multiple heating elements 402. The heating elements 402 are configured to heat the substrate 100 during the process. It is worth noting that, to improve efficiency and facilitate installation, during the actual installation process, the multiple heating elements 402 are first integrated onto a circuit board 4023 and then mounted onto the mounting plate 401. One end of a support shaft 405 is fixedly connected to the bottom of the mounting plate 401. The other end of the support shaft 405 passes through the transmission mechanism 301 and is secured to the outside of the transmission mechanism 301. During the process, the clamping mechanism 200 rotates the substrate 100, while the heating mechanism 400 does not rotate. Furthermore, a plate 700 is provided between the substrate 100 and the heating mechanism 400, through which light emitted by the heating elements can pass. Exemplarily, the plate 700 is made of sapphire or quartz. When the plate 700 is positioned on the clamping mechanism 200 , the plate 700 is configured to rotate with the clamping mechanism 200 during processing.

[0062] Exemplarily, in an embodiment of the present invention, the heating element 402 is an LED lamp bead, and a plurality of LED lamp beads are arranged on the circumference of a plurality of concentric circles with the center of the mounting plate 401 as the center, and the plurality of heating elements 402 are grouped into a plurality of heating element groups 4021. Furthermore, the center of the circle enclosed by each heating element group 4021 is aligned with the center of the clamping mechanism 200, and is also aligned with the center of the substrate 100 clamped by the clamping mechanism 200. In order to achieve the purpose of independently regulating the temperature of a local area of ​​the substrate 100, the heating temperature of each heating element group 4021 in the present invention can be independently controlled, and the purpose of changing the heating temperature and thus regulating the temperature of a local area of ​​the substrate 100 is achieved by independently controlling the heating power of each group of LED lamp beads. In an embodiment of the present invention, the wavelength range of the light emitted by the LED lamp beads is [200, 380] nm or (650, 2500] nm.

[0063] Please continue to refer to Figure 1 The nozzle mechanism 500 includes a liquid nozzle 501 and a swing arm 502. The liquid nozzle 501 is mounted on the swing arm 502. During the process, the liquid nozzle 501 is configured to distribute liquid onto the surface of the substrate 100 placed on the clamping mechanism 200. The swing arm 502 is equipped with a liquid delivery pipeline for supplying liquid to the liquid nozzle 501. The swing arm 502 can drive the liquid nozzle 501 to move back and forth along the radial direction of the substrate 100, between the center of the substrate 100 and the edge of the substrate 100.

[0064] The temperature monitoring mechanism includes a first temperature monitoring unit 601. The first temperature monitoring unit 601 is configured to monitor the temperature of the liquid film formed in the area on the surface of the substrate 100 corresponding to the area when the liquid spray head 501 moves from the center of the substrate 100 to the edge of the substrate 100 along the radial direction of the substrate 100 and continuously sprays liquid onto the surface of the substrate 100, and transmit the temperature to the control mechanism 800. Exemplarily, the first temperature monitoring unit 601 is a temperature sensor. The first temperature monitoring unit 601 can be disposed at any location capable of monitoring the temperature of the liquid film formed on the surface of the substrate 100. In this embodiment, the first temperature monitoring unit 601 is disposed on the swing arm 502.

[0065] The control mechanism 800 is configured to receive the temperature and adjust the heating temperature of the corresponding area of ​​the substrate 100 by the heating mechanism 400 based on the temperature.

[0066] Specifically, as the liquid ejection head 501 moves radially from the center of the substrate 100 toward the edge of the substrate 100 and continuously sprays liquid onto the surface of the substrate 100, when the liquid ejection head 501 reaches a certain area above the substrate 100, the heating element group 4021 located on the radius of the mounting plate 401 corresponding to the area is controlled to a second power. The heating element group 4021, having reached the second power, heats the corresponding area of ​​the substrate 100 to a second temperature. The second temperature is a preset value, approximately the temperature at which the liquid dispensed by the liquid ejection head 501 onto the substrate 100 reaches its boiling point. In this embodiment, the second temperature is greater than or equal to the boiling point of the liquid. Taking IPA as an example, the preferred second temperature process range is 78-85°C.

[0067] As the liquid ejection head 501 moves radially along the substrate 100 and continuously dispenses liquid onto the surface of the substrate 100, the first temperature monitoring unit 601 monitors the temperature of the liquid film in real time as the liquid ejection head 501 dispenses the liquid onto an area of ​​the substrate 100 surface, forming a liquid film. The first temperature monitoring unit 601 then feeds the temperature back to the control mechanism 800. The control mechanism 800 then determines the received temperature. If the determination indicates that the temperature of the liquid film formed on the substrate 100 surface is lower than a preset second temperature, the control mechanism 800 increases the heating power of the heating element group 4021 corresponding to the area where the liquid film temperature is lower than the second temperature to the second power, thereby rapidly raising the heating temperature of the area to the second temperature. Because the operating power of the LED lamp beads can be changed instantaneously, local temperature adjustments can be made very quickly. Once the liquid film temperature in a certain area is detected to be lower than the second temperature, the control mechanism 800 increases the operating power of the LED lamp beads contained in the heating element group 4021 corresponding to the area, thereby almost instantaneously changing the heating temperature of the area to ensure a drying effect.

[0068] It is worth noting that, in the present invention, the heating element group 4021 can be heating elements on a certain radius, or all heating elements extending within a certain distance from the center of the mounting plate 401 with a certain radius as the center, or all heating elements extending within a certain distance from the center of the mounting plate 401 and within a certain distance from the center of the mounting plate 401 with a certain radius as the center. Specifically, the coverage range of each heating element group 4021 can be adaptively adjusted and selected according to actual conditions. It should be understood that the certain radius here refers to: in the process of the liquid nozzle 501 moving from the center of the substrate 100 to the edge of the substrate 100 along the radial direction of the substrate 100, the liquid nozzle 501 moves to a certain area above the substrate 100, and the radius of the mounting plate 401 corresponding to the area.

[0069] Furthermore, the nozzle mechanism 500 also includes a nitrogen nozzle for nitrogen purging.

[0070] Furthermore, before the liquid nozzle 501 dispenses liquid onto the surface of the substrate 100, the control mechanism 800 controls the overall heating power of the heating element 402 to a first power. When the heating element 402 reaches the first power, it heats the substrate 100 to a first temperature. The first temperature is a preheating temperature, which serves to uniformly heat the entire substrate 100. Taking IPA as an example, the optimal first temperature process range is 60-70°C. The first power refers to the operating power of the LED lamp required to heat the substrate 100 to the first temperature. By pre-adjusting the overall heating power of the heating element 402 to the first power, the substrate 100 can be preheated, reaching the first temperature before liquid is dispensed. When the heating element 402 needs to adjust the heating temperature of a local area, it can reach the second temperature more quickly, resulting in higher drying efficiency. The first temperature is lower than the second temperature.

[0071] The embodiment of the present invention is to set up a first temperature monitoring unit 601, which can monitor the temperature of the liquid film distributed by the liquid nozzle 501 to the surface of the substrate 100 in real time as the liquid nozzle 501 moves and provide feedback, so as to more accurately monitor the temperature of the liquid sprayed by the liquid nozzle 501; at the same time, based on the monitoring results of the first temperature monitoring unit 601, the control mechanism 800 performs real-time control to adjust the heating power of the heating element group 4021 corresponding to the area where the liquid film temperature on the surface of the substrate 100 is lower than the second temperature, so as to quickly and accurately regulate the heating temperature of the area monitored in real time by the first temperature monitoring unit 601, so as to make the drying process and drying results more controllable.

[0072] It is worth noting that the apparatus of the present invention is not only suitable for drying substrates 100 after a cleaning process, but can also be used during an etching process. When used in a wet etching process, the apparatus delivers an etching chemical solution or a formulated solution to the rotating substrate surface via a nozzle mechanism, partially etching or completely removing the thin film on the substrate surface.

[0073] In wet etching processes, a spray nozzle mechanism delivers an etching chemical solution or formulated solution to a rotating substrate, partially etching or completely removing the thin film on the substrate surface. Because temperature is a key parameter affecting etching rate and uniformity, the device and processing method described herein enable precise, dynamic, and zoned temperature control of the substrate and the liquid on its surface, resulting in superior etching rate and uniformity control, improving the precision and stability of integrated circuit wet etching processes.

[0074] An embodiment of the present invention also provides a substrate processing method, including: clamping the substrate on a clamping mechanism; driving the clamping mechanism to rotate the substrate; heating the substrate by a heating mechanism; distributing liquid to the surface of the substrate through a liquid nozzle of a nozzle mechanism, and in the process of the liquid nozzle moving from the center of the substrate to the edge of the substrate along the radial direction of the substrate and continuously spraying liquid to the surface of the substrate, when the liquid nozzle moves to a certain area above the substrate, the temperature monitoring mechanism monitors the temperature of the liquid film formed in the substrate surface area corresponding to the certain area, and controls the heating temperature of the substrate surface area corresponding to the certain area by the heating mechanism based on the temperature.

[0075] Exemplarily, during the process, the clamping mechanism 200 clamps the substrate 100, maintaining the substrate 100 in a horizontal position, and the nozzle mechanism 500 is positioned above the substrate 100. In this embodiment, the liquid dispensed by the liquid nozzle 501 of the nozzle mechanism 500 onto the substrate 100 is dry liquid IPA. Before the liquid nozzle 501 moves to directly above the center of the substrate 100 and dispenses liquid onto the surface of the substrate 100, the control mechanism 800 controls the operating power of the heating element 402 of the heating mechanism 400 to a first power. The heating element 402 at the first power heats the entire substrate 100 to a first temperature, illustratively, 70°C.

[0076] After the substrate 100 is uniformly heated to the first temperature, the liquid nozzle 501 begins to move from the center of the substrate 100 to the edge of the substrate 100 along the radial direction of the substrate 100, and distributes dry liquid IPA to the substrate 100. During this process, when the liquid nozzle 501 moves to a certain area above the substrate 100, the control mechanism 800 controls the working power of the heating element group 4021 located on the radius of the mounting plate 401 corresponding to the certain area to increase from the first power to the second power. The heating element group 4021 that reaches the second power quickly heats the area of ​​the substrate 100 corresponding to the certain area to the second temperature. For example, the second temperature is 80°C.

[0077] It should be understood that the present device is also suitable for backside cleaning of substrates. When the present device is used in the backside cleaning process, the backside cleaning nozzle is required to pass through the center of the heating mechanism 400 and the plate 700 to reach below the substrate 100 so that the cleaning liquid can be sprayed onto the lower surface of the substrate 100 to perform the backside cleaning process.

[0078] Example 2

[0079] This embodiment provides a substrate processing device, the structure of which is substantially the same as that of the substrate processing device in embodiment 1, except that Figure 3As shown, the edge heating element 4022 located at the edge area of ​​the mounting plate 401 is arranged obliquely. The obliquely arranged heating element is used to cover the edge area of ​​the mounting plate in the heating area of ​​the obliquely arranged heating element.

[0080] During actual processing, the inventors discovered that pattern structure collapse often occurred at the edge of the substrate 100. Analysis revealed that this was due to the light emitted by the edge heating elements 4022 located at the edge of the mounting plate 401 failing to reach the edge of the substrate 100. This caused the edge temperature of the substrate 100 to fail to reach the target temperature during the heating and drying process, impacting process efficiency and causing pattern structure collapse at the edge of the substrate 100, resulting in waste. To address this issue, the edge heating elements 4022 located at the edge of the mounting plate 401 were tilted. In one embodiment, the tilt angle of the edge heating elements 4022 ranged from 0.1° to 60°. Furthermore, the tilt angle of the edge heating elements 4022 was set to 5° to 40°. This tilted edge heating element 4022 ensures that the target area of ​​the edge heating element 4022 is aligned with the edge of the substrate 100, ensuring proper heating of the edge of the substrate 100 during the drying process. This prevents pattern structure collapse at the edge of the substrate 100 and ensures effective drying.

[0081] It should be understood that the edge region of mounting plate 401 is the area between the edge of mounting plate 401 and the circumference of a circle at a specified distance from the center of mounting plate 401. Exemplarily, the specified distance is 0-1.5 mm. Within the specified distance, a set of edge heating elements 4022 may be provided, or more than one set of edge heating elements 4022 may be provided. The specific arrangement can be tailored to actual process requirements.

[0082] The rest of the structure of this embodiment is the same as that of embodiment 1.

[0083] Example 3

[0084] This embodiment provides a substrate processing device, the structure of which is substantially the same as that of the substrate processing device in embodiment 1, except that Figure 4 The temperature monitoring mechanism of the device further includes a second temperature monitoring unit 602. In the actual installation process, the second temperature monitoring unit 602 can be set at any position that can monitor the temperature of each area on the surface of the substrate 100. It should be understood that the second temperature monitoring unit 602 and the first temperature monitoring unit 601 can be combined and set in a single component, or they can be set separately. In this embodiment, Figure 5 As shown, the second temperature monitoring unit 602 is selected to be disposed on the swing arm 502 and is disposed separately from the first temperature monitoring unit 601 .

[0085] Please refer to Figure 5 In the process of the liquid nozzle 501 moving from the center of the substrate 100 to the edge of the substrate 100 along the radial direction of the substrate 100 and continuously spraying liquid onto the surface of the substrate 100, when the liquid nozzle 501 leaves an area N above the substrate and moves to the next area N+1 in the direction away from the center of the substrate, the second temperature monitoring unit 602 is configured to monitor the temperature of the substrate surface area corresponding to the area N and store the monitored temperature results. The use of the second temperature monitoring unit 602 to monitor the instantaneous temperature of the substrate after drying is completed in real time and to make statistics can assist in monitoring the process safety of the substrate processing device. After the substrate completes the corresponding process on the substrate processing device, the substrate is taken out of the substrate processing device to check the process results. Once it is found that the pattern structure of a certain area of ​​the substrate has collapsed, a recheck can be performed based on the data recorded by the second temperature monitoring unit 602. Ideally, when heating elements on adjacent radii heat the substrate, the target heating temperature is the same, and the surface temperature of the substrate should also be almost the same when the liquid film on the substrate surface is dried. Judging from the results monitored by the second temperature monitoring unit 602, the data should be almost equal. If the temperature data of adjacent areas on the substrate surface are found to have large deviations in the data recorded by the second temperature monitoring unit 602, it indicates that there is a problem with the heating element in that area. The target will be clearer during maintenance, which can improve the efficiency of machine maintenance and ensure the substrate processing yield.

[0086] The rest of the structure of this embodiment is the same as that of embodiment 1.

[0087] Example 4

[0088] This embodiment provides a substrate processing apparatus having a structure substantially similar to that of the substrate processing apparatus in Example 1, except that the temperature monitoring mechanism of this apparatus further includes a third temperature monitoring unit. The third temperature monitoring unit is configured to monitor the real-time temperature at various locations on the back side of the heating mechanism and transmit the real-time temperature to the control mechanism 800.

[0089] For details, please refer to Figure 6The third temperature monitoring unit 603 includes multiple groups of temperature sensors 6031, each of which is disposed below the heating elements 402, with each group of temperature sensors 6031 corresponding to each heating element group 4021. The third temperature monitoring unit 603 is configured to monitor the real-time temperature of each heating element group 4021 and transmit the real-time temperature to the control mechanism 800. Simultaneously, the control mechanism 800 receives the real-time temperature readings from the third temperature monitoring unit 603. When the real-time temperature exceeds a preset value, the control mechanism 800 issues an alarm. The preset value is the normal operating temperature of the heating elements, exemplarily 80°C. When the third temperature monitoring unit 603 detects that the operating temperature of a heating element group is greater than 80°C, the control mechanism 800 determines that the heating element group is in an abnormal operating state and requires prompt maintenance. The control mechanism 800 then issues an alarm to notify personnel to perform the maintenance.

[0090] The rest of the structure of this embodiment is the same as that of embodiment 1.

[0091] Example 5

[0092] This embodiment provides a substrate processing device, the structure of which is substantially the same as that of the substrate processing device in embodiment 1, except that Figure 7 As shown, the substrate processing apparatus further includes a cooling mechanism comprising a cooling portion disposed on a mounting plate 401 and positioned below a heating element 402. During the process, the cooling portion is configured to reduce the temperature of the heating element 402. Examples of the cooling portion include, but are not limited to, a cooling tank. The specific type can be selected based on actual process requirements. The cooling portion is configured to reduce the temperature of the heating element 402, thereby preventing damage to the heating element 402 due to excessive temperatures during the process.

[0093] For details, please refer to Figure 7 When the cooling portion is a cooling tank 404, the cooling tank 404 is provided on the upper end surface of the mounting plate 401. When the mounting plate 401 and the heating element 402 are mounted, the circuit board 4023 carrying the plurality of heating elements 402 is engaged and fixed with the mounting plate 401 to form a sealed space. A liquid inlet 9 and a liquid outlet 4042 are provided at the bottom of the mounting plate 401. When cooling the heating element 402, external coolant enters the cooling tank through the liquid inlet 4041, filling the entire cooling tank 404 so that the liquid surface of the coolant directly contacts the heating element 402, thereby cooling the heating element 402. At the same time, the coolant is continuously discharged from the liquid outlet 4042, forming a dynamic equilibrium process. During the dynamic equilibrium process, the cooling tank 404 is always kept full of coolant, thereby continuously cooling the heating element 402.

[0094] Please refer to Figure 8 In order to further ensure the sealing effect, a sealing ring 403 is set at the fixing position of the mounting plate 401 and the circuit board 4023 to perform sealing, so that the sealing effect is better.

[0095] In another embodiment, in order to further ensure the uniformity of cooling, the number of cooling slots 404 of the cooling part is several, please refer to Figure 9 Each cooling slot 404 is roughly annular, and each cooling slot 404 is provided with a liquid inlet 4041 and a liquid outlet 4042. Furthermore, a cooling slot 404 is provided below each heating element group 4021 to achieve the purpose of precise and uniform cooling.

[0096] Example 6

[0097] This embodiment provides a substrate processing device, the structure of which is substantially the same as that of the substrate processing device in embodiment 1, except that Figure 10 The heating mechanism 400 in this embodiment includes a heating disk and a fluid delivery unit. The heating disk is disposed below the substrate 100 clamped by the clamping mechanism 200. The heating disk defines at least two cavities 4011 along a radial direction, each cavity 4011 being located at a different radius. A fluid inlet 4012 is defined at the bottom of each cavity 4011, and a fluid outlet 4013 is defined at the top of each cavity 4011. The fluid inlet 4012 is connected to a fluid delivery pipe 4014. A fluid delivery unit 4022 is connected to the fluid delivery pipe 4014 and delivers a heated fluid to the heating disk. The fluid delivery unit 4022 is provided with a heater 4023 for heating the fluid within the fluid delivery unit. In the process of the liquid ejection head 501 moving from the center of the substrate 100 to the edge of the substrate 100 along the radial direction of the substrate 100, when the liquid ejection head 501 moves to a certain area above the substrate 100, the control mechanism 800 controls the thermal energy of the fluid in the cavity located on the radius corresponding to the area, thereby increasing the local temperature of the substrate 100 below the liquid ejection head 501. The specific control process and specific implementation methods are described in patent PCT / CN2021 / 120372 filed by ACM Semiconductor Equipment (Shanghai) Co., Ltd. on September 24, 2021, the contents of which are incorporated herein by reference.

[0098] Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A substrate processing device, characterized in that: include: Control agencies; a clamping mechanism configured to clamp the substrate during a process; A nozzle mechanism includes a liquid nozzle and a swing arm, wherein the liquid nozzle is configured to distribute liquid to a surface of a substrate placed on a clamping mechanism; the swing arm is configured to supply liquid to the liquid nozzle, and the swing arm can drive the liquid nozzle to reciprocate between the center and the edge of the substrate in a radial direction of the substrate; a rotation drive mechanism, configured to drive the clamping mechanism to rotate; a heating mechanism configured to heat the substrate clamped by the clamping mechanism; The temperature monitoring mechanism includes a first temperature monitoring unit, which is configured to: during the process of the liquid nozzle moving from the center of the substrate to the edge of the substrate along the radial direction of the substrate and continuously spraying liquid onto the surface of the substrate, when the liquid nozzle moves to a certain area above the substrate, monitor the temperature of the liquid film formed in the substrate surface area corresponding to the certain area, and send the temperature to the control mechanism; the control mechanism is configured to receive the temperature and, based on the temperature, regulate the heating temperature of the substrate surface area corresponding to the certain area by the heating mechanism.

2. The substrate processing apparatus according to claim 1, wherein: The temperature monitoring mechanism further includes a second temperature monitoring unit; In the process of the liquid nozzle moving from the center of the substrate to the edge of the substrate along the radial direction of the substrate and continuously spraying liquid onto the surface of the substrate, when the liquid nozzle leaves an area N above the substrate and moves to the next area N+1 in the direction away from the center of the substrate, the second temperature monitoring unit is configured to monitor the temperature of the substrate surface area corresponding to the area N and store the monitored temperature.

3. The substrate processing apparatus according to claim 2, wherein: The second temperature monitoring unit is arranged on the swing arm.

4. The substrate processing apparatus according to claim 1, wherein: The temperature monitoring mechanism further includes a third temperature monitoring unit, which is configured to monitor the real-time temperature of various locations on the back of the heating mechanism and transmit the real-time temperature to the control mechanism.

5. The substrate processing apparatus according to claim 4, wherein: The control mechanism is configured to: The real-time temperature monitored by the third temperature monitoring unit is received in real time. When the value of the real-time temperature is greater than a preset value, the control mechanism issues an alarm message.

6. The substrate processing apparatus according to claim 1, wherein: The heating mechanism includes a mounting plate and a plurality of heating elements disposed on the mounting plate.

7. The substrate processing apparatus according to claim 6, wherein: The heating element includes an LED lamp bead; The LED lamp beads are arranged on the circumference of a plurality of concentric circles with the center of the mounting plate as the center.

8. The substrate processing apparatus according to claim 7, wherein: The plurality of heating elements are divided into a plurality of heating element groups; and the heating power of each heating element group can be independently controlled.

9. The substrate processing apparatus according to claim 8, wherein: The heating element comprises an edge heating element located in the edge area of ​​the mounting plate, wherein the edge heating element is arranged obliquely, and the obliquely arranged heating element is used to ensure that the edge area of ​​the mounting plate is covered in the heating area of ​​the obliquely arranged heating element.

10. The substrate processing apparatus according to claim 9, wherein: The edge area of ​​the mounting plate is an area between the circumference of the mounting plate edge at a specified distance from the center of the mounting plate and the edge of the mounting plate.

11. The substrate processing apparatus according to claim 9, wherein: The edge heating element is tilted at an angle of 0.1° to 60°.

12. The substrate processing apparatus according to claim 7, wherein: The wavelength range of the light emitted by the LED lamp beads is: [200, 380] nm or (650, 2500] nm.

13. The substrate processing apparatus according to claim 6, wherein: The control mechanism is configured to: In the process of the liquid nozzle moving from the center of the substrate to the edge of the substrate along the radial direction of the substrate and continuously spraying liquid onto the surface of the substrate, when the liquid nozzle moves to a certain area above the substrate, the heating element located on the radius of the mounting plate corresponding to the certain area is controlled to a second power, and the heating element that reaches the second power heats the surface area of ​​the substrate corresponding to the certain area to a second temperature.

14. The substrate processing apparatus according to claim 13, wherein: The control mechanism is further configured to: When the first temperature monitoring unit monitors that the temperature of the liquid film formed in the substrate surface area is lower than the second temperature, the control mechanism controls the heating mechanism to increase the heating power to increase the heating temperature of the substrate surface area.

15. The substrate processing apparatus according to claim 14, wherein: Before the liquid ejecting head dispenses liquid onto the surface of the substrate, the control mechanism is configured to: The heating power of the heating element is controlled to be a first heating power, and the heating element that reaches the first heating power heats the substrate to a first temperature.

16. The substrate processing apparatus according to claim 1, wherein: The first temperature monitoring unit is arranged on the swing arm.

17. The substrate processing apparatus according to claim 1, wherein: The heating mechanism includes a heating disk and a fluid delivery unit; The heating plate is provided with at least two cavities along the radial direction, each cavity being distributed at a different radius, a fluid inlet hole being provided at the bottom of the cavity, a fluid outlet hole being provided at the top of the cavity, and the fluid inlet hole being connected to the fluid delivery pipe; The fluid delivery unit is connected to the fluid delivery pipe, and is configured to deliver fluid to the heating disk. A heater is provided on the fluid delivery unit, and the heater is used to heat the fluid in the fluid delivery unit.

18. The substrate processing apparatus according to claim 6, wherein: Also includes: The cooling mechanism includes a cooling portion, which is disposed on the mounting plate and below the heating element, and is configured to reduce the temperature of the heating element.

19. The substrate processing apparatus according to claim 6, wherein: Also includes: A plate, the light emitted by the heating element can penetrate the plate, the plate is arranged between the heating mechanism and the substrate, the plate is fixedly connected to the clamping mechanism, and when the rotation drive mechanism drives the clamping mechanism to rotate, the plate rotates together with the clamping mechanism.

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