Semiconductor device

Abstract

A semiconductor device according to some implementations includes: a main transistor; a peripheral circuit element connected to one end of the main transistor; and a Zener diode connected between the other end of the main transistor and the peripheral circuit element. The main transistor includes: a main channel layer; a barrier layer disposed on the main channel layer; a main gate electrode disposed on the barrier layer; a gate semiconductor layer provided between the barrier layer and the gate electrode; and a main source electrode and a main drain electrode connected to the main channel layer. The peripheral circuit element includes: a sub-channel layer connected to the main drain electrode and including a drift region having a two-dimensional electron gas; and a detection electrode disposed on the sub-channel layer, and a Zener diode electrically connected between the detection electrode and the main source electrode.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority from Korean Patent Application No. 10-2024-0036462 filed on March 15, 2024, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0002] The present disclosure relates to a semiconductor device. Background Art

[0003] Power semiconductor devices are becoming increasingly important in various fields, including transportation (e.g., electric vehicles, railways, and trams), renewable energy systems (e.g., solar and wind power generation), and mobile devices. Power semiconductor devices are semiconductor devices designed to handle high voltages or high currents, and perform functions such as power conversion and control in large power systems or high-output electronic devices. Power semiconductor devices have the ability and durability to handle high power, allowing them to handle large amounts of current and withstand high voltages.

[0004] For example, power semiconductor devices can handle voltages ranging from hundreds to thousands of volts and currents ranging from tens to thousands of amperes. Power semiconductor devices improve electrical efficiency by minimizing power loss. Furthermore, power semiconductor devices can be driven stably even in environments such as high temperatures.

[0005] Power semiconductor devices can be categorized by their materials, with examples including SiC and GaN. Using SiC or GaN instead of existing silicon wafers (Si wafers) to manufacture power semiconductor devices can mitigate the inherent instability of silicon at high temperatures. SiC power semiconductor devices are heat-resistant and offer minimal power loss, making them suitable for applications in electric vehicles and renewable energy systems. GaN power semiconductor devices are more expensive, but offer high speed and are suitable for high-speed charging of mobile devices. Summary of the Invention

[0006] The present disclosure relates to a semiconductor device having stable electrical characteristics and improved reliability.

[0007] According to some implementations of the present disclosure, a semiconductor device includes: a main transistor; a peripheral circuit element connected to one end of the main transistor; and a Zener diode connected between the other end of the main transistor and the peripheral circuit element. The main transistor includes: a main channel layer; a barrier layer disposed on the main channel layer and including a material having an energy band gap different from the energy band gap of the main channel layer; a main gate electrode disposed on the barrier layer; a gate semiconductor layer disposed between the barrier layer and the gate electrode; and a main source electrode and a main drain electrode disposed on both sides of the gate electrode and connected to the main channel layer. The peripheral circuit element includes: a sub-channel layer connected to the main drain electrode and including a drift region having a two-dimensional electron gas; and a detection electrode disposed on the sub-channel layer, with the Zener diode electrically connected between the detection electrode and the main source electrode.

[0008] According to some implementations of the present disclosure, a semiconductor device includes: a main transistor; a resistance element connected to one end of the main transistor; and a Zener diode connected between the other end of the main transistor and the resistance element, wherein the main transistor includes: a main channel layer; a barrier layer arranged on the main channel layer and including a material with an energy band gap different from the energy band gap of the main channel layer; a gate electrode arranged on the barrier layer; a gate semiconductor layer arranged between the barrier layer and the gate electrode; and a main source electrode and a main drain electrode arranged on both sides of the gate electrode and connected to the main channel layer, wherein the resistance element includes: a sub-channel layer connected to the main drain electrode and including a drift region having a two-dimensional electron gas; a sub-drain electrode connected to one side of the sub-channel layer and extending from one end of the main drain electrode; and a detection electrode connected to the other side of the sub-channel layer, wherein the width of the sub-channel layer is smaller than the width of the main channel layer, and the Zener diode is electrically connected between the detection electrode and the main source electrode.

[0009] According to some implementations of the present disclosure, a semiconductor device includes: a main transistor; a sub-transistor element connected to one end of the main transistor; and a Zener diode connected between the other end of the main transistor and the sub-transistor element, wherein the main transistor includes: a main channel layer; a barrier layer arranged on the main channel layer and including a material with an energy band gap different from the energy band gap of the main channel layer; a gate electrode arranged on the barrier layer; a gate semiconductor layer arranged between the barrier layer and the gate electrode; and a main source electrode and a main drain electrode arranged on both sides of the gate electrode and connected to the main channel layer, wherein the sub-transistor element includes: a sub-channel layer connected to the main drain electrode and including a drift region having a two-dimensional electron gas; a sub-drain electrode connected to the sub-channel layer and extending from one end of the main drain electrode; a detection electrode connected to the sub-channel layer; and a sub-gate electrode arranged on the sub-channel layer and between the sub-drain electrode and the detection electrode, and the Zener diode is connected between the detection electrode and the main source electrode.

[0010] According to some implementations of the present disclosure, the electrical characteristics and reliability of a semiconductor device may be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 is a block diagram illustrating an example of a semiconductor device.

[0012] Figure 2 is a circuit diagram illustrating an example of a semiconductor device.

[0013] Figure 3 It shows Figure 2 A timing diagram of the gate voltage, the first power supply voltage and the detection voltage of the semiconductor device.

[0014] Figure 4 is a top view illustrating an example of a semiconductor device.

[0015] Figure 5 and Figure 6 It is along Figure 4 A cross-sectional view taken along line AA'.

[0016] Figure 7 It is along Figure 4 Cross-sectional view taken along lines BB' and CC'.

[0017] Figure 8 corresponds to Figure 4 sectional views taken along lines BB' and CC' of FIG. 1 , which illustrate an example of a semiconductor device.

[0018] Figure 9 is a circuit diagram illustrating an example of a resistance unit of a semiconductor device.

[0019] Figure 10 is a top view illustrating an example of a semiconductor device.

[0020] Figure 11 It is along Figure 10 A cross-sectional view taken along line D-D'.

[0021] Figure 12 corresponds to Figure 10 A cross-sectional view taken along line DD' of FIG. 1 shows peripheral circuit elements of an example of a semiconductor device.

[0022] Figure 13 is a circuit diagram illustrating an example of a semiconductor device.

[0023] Figure 14 It shows Figure 13 A timing diagram of the gate voltage, the first power supply voltage and the detection voltage of the semiconductor device.

[0024] Figure 15 It shows Figure 13A top view of a semiconductor device.

[0025] Figure 16 It is along Figure 15 A cross-sectional view taken along line EE'.

[0026] Figure 17 and Figure 18 corresponds to Figure 15 A cross-sectional view taken along line EE' of FIG. 1 shows peripheral circuit elements of an example of a semiconductor device.

[0027] Figure 19 is a top view illustrating peripheral circuit elements of an example of a semiconductor device.

[0028] Figure 20 is a top view illustrating an example of a semiconductor device.

[0029] Figure 21 It is along Figure 20 A cross-sectional view taken along line FF'.

[0030] Figure 22 is a circuit diagram illustrating an example of a semiconductor device.

[0031] Figure 23 It shows Figure 22 A timing diagram of the gate voltage, the first power supply voltage and the detection voltage of the semiconductor device.

[0032] Figure 24 It shows Figure 22 A top view of a semiconductor device.

[0033] Figure 25 It is along Figure 24 A cross-sectional view taken along line G-G'. DETAILED DESCRIPTION

[0034] The present disclosure will be described in detail below with reference to the accompanying drawings, in which examples according to the present disclosure are shown. Those skilled in the art will appreciate that the described examples can be modified in various different ways without departing from the spirit or scope of the present disclosure.

[0035] Like reference numerals refer to like elements throughout the specification.

[0036] The sizes and thicknesses of the components in the figures are arbitrarily shown for better understanding and ease of description; however, the examples are not limited thereto. In the drawings, the thicknesses of layers, films, panels, regions, etc. are exaggerated for clarity. In the drawings, the thicknesses of some layers and regions may be exaggerated for ease of description.

[0037] Furthermore, it should be understood that when an element, such as a layer, film, region, or substrate, is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements. Furthermore, when an element is referred to as being "on" or "above" a reference element, it can be above or below the reference element, but is not necessarily referred to as being "on" or "above" in a direction opposite to gravity.

[0038] In addition, unless explicitly described to the contrary, the word “comprise” and variations such as “comprises” or “comprising” will be understood to imply the inclusion of stated elements but not the exclusion of any other elements.

[0039] Furthermore, the phrase “in plane” refers to a view seen from a position above an object (eg, from the top), and the phrase “in section” refers to a view of a section of an object cut vertically from the side.

[0040] like Figure 1 As shown, a semiconductor device according to some implementations includes a main element region MA, a peripheral circuit region PA, a Zener unit 400 , and a detector 500 . The main element region MA includes a main transistor 100 , and the peripheral circuit region PA includes a peripheral circuit element 300 .

[0041] The main transistor 100 may be disposed in the main element region MA. For example, the main transistor 100 of the semiconductor device according to some implementations may be a normally-off high electron mobility transistor (HEMT). However, this is not limiting, and the main transistor 100 may be, for example, a normally-on high electron mobility transistor or another type of transistor. The main element region MA may represent a region in which the main transistor 100 is disposed.

[0042] The peripheral circuit area PA may include an element electrically connected to the main transistor 100. For example, the peripheral circuit element 300 electrically connected to the main transistor 100 may be provided in the peripheral circuit area PA. In some implementations, one end of the peripheral circuit element 300 is electrically connected to the main transistor 100, and the other end of the peripheral circuit element 300 may be connected to the Zener unit 400 and the detector 500. For example, the peripheral circuit element 300 provided in the peripheral circuit area PA may include a resistor element ( Figure 2 310 in), diode components ( Figure 13 320) or sub-transistor elements ( Figure 22330 in FIG. However, the present invention is not limited thereto, and as another example, the peripheral circuit element 300 may include a passive element (such as a capacitor or an inductor), or may include an active element (such as an integrated circuit (IC) chip). As another example, the peripheral circuit element 300 may include a shunt, a voltage divider, a voltage limiter, and a protection element for the main transistor 100. In some implementations, the peripheral circuit area PA refers to a region where the peripheral circuit element 300 is disposed.

[0043] The Zener cell 400 may be electrically connected between the peripheral circuit element 300 and the main transistor 100. One end of the Zener cell 400 may be electrically connected to the peripheral circuit element 300, and the other end of the Zener cell 400 may be electrically connected to the main transistor 100. For example, the Zener cell 400 may connect the peripheral circuit element 300 to the other end of the main transistor 100 (e.g., the second electrode ( Figure 2 The Zener cell 400 may be configured together with the peripheral circuit element 300 to clip the voltage at one end of the Zener cell 400 .

[0044] The Zener unit 400 may prevent a voltage at one end of the Zener unit 400 from rapidly increasing. For example, the Zener unit 400 may include a Zener diode ( Figure 2 410 in the figure), but not limited thereto. Here, the Zener diode has the same characteristics as a general diode device and allows current to flow under forward voltage. However, the Zener diode may refer to an element that allows reverse current to flow at a lower voltage (breakdown voltage) than a general diode device under reverse voltage. Figure 3 Describe this.

[0045] The detector 500 may be electrically connected to the peripheral circuit element 300 and the Zener cell 400. For example, the detector 500 may be electrically connected to the other end of the peripheral circuit element 300 and one end of the Zener cell 400. The detector 500 may detect the voltage at the other end of the peripheral circuit element 300 and / or the voltage at one end of the Zener cell 400. Based on the detected voltage, the detector 500 may detect a voltage change at one end of the main transistor 100 or calculate a time period during which the main transistor 100 is on.

[0046] In some implementations, the detector 500 may further include an element that performs additional operations based on the calculated voltage change or conduction period at one end of the main transistor 100. For example, the detector 500 may further include circuitry to compensate for and protect the main transistor 100 and / or the semiconductor device including the main transistor 100. For example, the detector 500 may detect the voltage change at one end of the main transistor 100 or calculate the conduction period of the main transistor 100 to compensate for and protect the main transistor 100 from operating within a predetermined range. Here, the compensation circuit may refer to a circuit that compensates for operational losses in the main transistor 100 to ensure that the main transistor 100 operates within a predetermined range. The protection element may be a circuit that prevents damage to the semiconductor device including the main transistor 100, such as an overcurrent protection element, an overvoltage protection element, an overtemperature protection element, a short circuit protection element, an electrostatic discharge protection element, a low dropout (LDO) regulator, etc. However, without limitation, the detector 500 may further include a predetermined circuit to control the operation of the main transistor 100.

[0047] Figure 2 is a circuit diagram illustrating a semiconductor device according to some implementations. Figure 3 It shows Figure 2 The timing diagram of the gate voltage, the first power supply voltage and the detection voltage of the semiconductor device is shown in FIG. S With ground voltage.

[0048] Reference Figure 2 , the semiconductor device may include a main transistor 100, a resistance element 310, a Zener diode 410, and a detector 500. In some implementations, the resistance element 310 may correspond to Figure 1 The peripheral circuit element 300, and the Zener diode 410 may correspond to Figure 1 The Zener unit is 400.

[0049] The main transistor 100 may include a main gate electrode G, a first electrode D, and a second electrode S. The main transistor 100 may control a drain-source current between the first electrode D and the second electrode S according to a gate signal applied to the main gate electrode G. For example, when a turn-on signal is applied to the main gate electrode G of the main transistor 100, current may flow along a first path C1. Here, the first path C1 may represent a path for current to flow from the first electrode D to the second electrode S of the main transistor 100. Accordingly, current may flow from the first node N1 to the second node N2 through the main transistor 100. The first power supply voltage V D can be supplied to the first electrode D, and the second power supply voltage V S The second power supply voltage V S The value can be less than the first power supply voltage V DFor example, the second power supply voltage V S Here, the first electrode D may refer to the main drain electrode ( Figure 4 175m in ), and the second electrode S may refer to a main source electrode of the main transistor 100 ( Figure 4 In addition, the first power supply voltage V D may refer to a main drain electrode ( Figure 4 The second power supply voltage V S may refer to a main source electrode ( Figure 4 173m) voltage in.

[0050] The resistive element 310 may be electrically connected to the first electrode D of the main transistor 100. In addition, the resistive element 310 may be electrically connected to the Zener diode 410 and the detector 500. For example, one end of the resistive element 310 may be electrically connected to one end of the main transistor 100 via the first node N1. For example, one end of the resistive element 310 may be electrically connected to the first electrode D of the main transistor 100 via the first node N1. For example, in some implementations, one end of the resistive element 310 may be electrically connected to the main drain electrode ( Figure 4 In addition, one end of the resistor element 310 can be connected to a first power supply voltage V D Correspondingly, the first power supply voltage V D Can be supplied to one end of the resistance element 310. The other end of the resistance element 310 can be electrically connected to the Zener diode 410 and the detector 500 through the third node N3. In some implementations, the resistance element 310 corresponds to the sub-drain electrode ( Figure 4 175s) and the detection electrode ( Figure 4 The sub-drift region ( Figure 7 In addition, the third node N3 can be connected to the detection electrode ( Figure 4 The corresponding point in SE). Figures 4 to 7 Describe this.

[0051] The Zener diode 410 may be electrically connected between the resistance element 310 and the main transistor 100. The Zener diode 410 may include an anode 412 and a cathode 411. The cathode 411 of the Zener diode 410 may be electrically connected to the resistance element 310 via the third node N3, and the anode 412 of the Zener diode 410 may be electrically connected to the second electrode S of the main transistor 100 via the second node N2. In addition, the anode 412 of the Zener diode 410 may be electrically connected to a supply voltage VS The second power supply.

[0052] In some implementations, the Zener diode 410 has the same characteristics as a general diode device and allows current to flow under forward voltage, but only allows reverse current to flow under reverse voltage at a breakdown voltage V Zth At this time, the voltage value applied to both ends of the Zener diode 410 can be constant to the breakdown voltage V Zth For example, at the breakdown voltage V Zth At a reverse voltage below 100, current will not flow through the Zener diode 410, but at a breakdown voltage V Zth Current can flow under reverse voltage above 0.01 V. Zth It can be defined as the minimum voltage at which current can flow into the Zener diode 410 when a reverse voltage is applied to the Zener diode 410. Here, the forward direction may refer to a direction from the anode 412 to the cathode 411 of the Zener diode 410, and the reverse direction may refer to a direction from the cathode 411 to the anode 412 of the Zener diode 410. Accordingly, the Zener diode 410 can perform a role of clipping the detection voltage Va of the third node N3.

[0053] Further references Figure 3 , for example, when the first power supply voltage V D is less than the breakdown voltage V of the Zener diode 410 Zth When (for example, Figure 3 The third time period T3), which is less than the breakdown voltage V Zth In the case where a reverse voltage of 100 is applied to the Zener diode 410, current does not flow into the Zener diode 410. Accordingly, current does not flow along the second path C2, and the value of the detection voltage Va of the third node N3 can be the same as the first power supply voltage V D In addition, when the first power supply voltage V D Greater than the breakdown voltage V of the Zener diode 410 Zth When (for example, Figure 3 The first time period T1 and the second time period T2), which is greater than the breakdown voltage V Zth When a reverse voltage is applied to the Zener diode 410, current may flow from the cathode 411 to the anode 412 of the Zener diode 410. For example, the current may flow along the second path C2. For example, the current may flow from the first node N1 to the third node N3 through the resistor 310, and then to the second node N2 through the Zener diode 410. At this time, the detection voltage Va of the third node N3 may have a value equal to the breakdown voltage V of the Zener diode 410. Zth Basically the same value.

[0054] Refer again Figure 2, the detector 500 may be connected to the third node N3. The detector 500 may be electrically connected to one end of the peripheral circuit element 300 and the cathode 411 of the Zener unit 400 through the third node N3. The detector 500 may detect a detection voltage Va at the third node N3. The detector 500 may detect a voltage change at one end of the main transistor 100 based on the detection voltage Va.

[0055] For example, the detector 500 may detect the first power voltage V based on the detection voltage Va. D The value is less than the breakdown voltage V Zth For example, Figure 3 As shown, in the first time period T1, the second time period T2, the fourth time period T4 and the fifth time period T5, the detection voltage Va has a value similar to the breakdown voltage V Zth This may indicate that the current flows along the second path C2. For example, in the first time period T1, the second time period T2, the fourth time period T4, and the fifth time period T5, the first power supply voltage V D The value can be greater than the breakdown voltage V Zth At the same time, in the third time period T3, the value of the detection voltage Va is less than the breakdown voltage V Zth This may indicate that the current does not flow along the second path C2. For example, the first power supply voltage V D The value can be less than the breakdown voltage V Zth .

[0056] For example, at the first power supply voltage V D The value is less than the breakdown voltage V Zth The value of the detection voltage Va may decrease during the period of time. Accordingly, the detector 500 may detect the first power supply voltage V applied to the first electrode D of the main transistor 100 based on the value of the detection voltage Va. D The value is less than the breakdown voltage V Zth The time period of the value.

[0057] As another example, the detector 500 may detect the first power voltage V based on the detection voltage Va. D The gate voltage V G Can be applied to the main gate electrode G of the main transistor 100. When the on-voltage Von is applied to the main gate electrode G, the main transistor 100 can be turned on. At this time, as the main transistor 100 is turned on, the first power supply voltage V D The value of may decrease at predetermined intervals due to a load effect, etc. Therefore, as described above, the detector 500 may detect a time period during which the detection voltage Va decreases and calculate the first power supply voltage V DThe time period during which the value of φ decreases, and accordingly, the time period during which the main transistor 100 is turned on can also be calculated.

[0058] Figure 4 is a top view illustrating a semiconductor device according to some implementations. Figure 5 and Figure 6 It is along Figure 4 A cross-sectional view taken along line AA'. Figure 5 shows a semiconductor device in an off state according to some implementations, and Figure 6 A semiconductor device according to some implementations is shown in an on-state.

[0059] Reference Figure 4 , the peripheral circuit area PA of the semiconductor device can be spaced apart from the main component area MA. For example, the peripheral circuit area PA can be spaced apart from the main component area MA in the second direction (Y direction), but is not limited thereto. For example, the peripheral circuit area PA can be spaced apart from the main component area MA in the first direction (X direction), or can surround the side of the main component area MA. Various other variations are possible. In some implementations, the separation structure 160 can be provided between the peripheral circuit area PA and the main component area MA, but is not limited thereto. In some implementations, the peripheral circuit area PA is adjacent to the main component area MA.

[0060] Further references Figure 5 The main transistor 100 of the semiconductor device may include: a main channel layer 132m, a barrier layer 136 arranged on the main channel layer 132m, a main gate electrode 155 arranged on the barrier layer 136, a gate semiconductor layer 152 arranged between the barrier layer 136 and the main gate electrode 155, a protective layer 140 arranged on the barrier layer 136, and a main source electrode 173m and a main drain electrode 175m spaced apart from each other on the main channel layer 132m.

[0061] The main channel layer 132m forms the channel between the main source electrode 173m and the main drain electrode 175m, and a two-dimensional electron gas (2DEG) 134 may be disposed within the main channel layer 132m. The 2DEG 134 is a charge transport model used in solid-state physics, referring to a group of electrons that can move freely in two dimensions (e.g., in the xy plane) but are rigidly confined within that two-dimensional space, unable to move in another dimension (e.g., in the z-direction). For example, the 2DEG 134 may exist in a two-dimensional, paper-like form within three dimensions. The 2DEG 134 primarily occurs in semiconductor heterojunction structures and may occur at the interface between the main channel layer 132m and the barrier layer 136 in the semiconductor devices described herein. For example, the 2DEG 134 may be generated in the portion of the main channel layer 132m adjacent to the barrier layer 136.

[0062] The main channel layer 132m may include one or more materials selected from the group III-V materials, such as nitrides containing Al, Ga, In, B, or a combination thereof. The main channel layer 132m may be made of a single layer or multiple layers. The main channel layer 132m may be Al x In y Ga 1-x-y N (0≤x≤1, 0≤y≤1, x+y≤1). For example, the main channel layer 132m may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or a combination thereof. The main channel layer 132m may be a layer doped with impurities or a layer not doped with impurities. The thickness of the main channel layer 132m may be approximately several hundred nanometers or less.

[0063] The main channel layer 132m can be provided on the substrate 110, and the seed layer 121 and the buffer layer 120 can be located between the substrate 110 and the main channel layer 132m. The substrate 110, the seed layer 121, and the buffer layer 120 are layers used to form the main channel layer 132m and can be omitted in some cases. For example, when a substrate made of GaN is used as the main channel layer 132m, at least one of the substrate 110, the seed layer 121, and the buffer layer 120 can be omitted. Considering the relatively high price of substrates made of GaN, a substrate 110 made of Si can be used to grow the main channel layer 132m containing GaN. Due to the different lattice structures of Si and GaN, it may not be easy to grow the main channel layer 132m directly on the substrate 110. Therefore, the seed layer 121 and the buffer layer 120 can be grown on the substrate 110 first, and then the main channel layer 132m can be grown on the buffer layer 120. Furthermore, after being used in the manufacturing process, at least one of the substrate 110 , the seed layer 121 , and the buffer layer 120 may be removed from the final structure of the semiconductor device.

[0064] The substrate 110 may comprise a semiconductor material. For example, the substrate 110 may comprise sapphire, Si, SiC, AlN, GaN, or a combination thereof. The substrate 110 may be a silicon-on-insulator (SOI) substrate. However, the material of the substrate 110 is not limited thereto; any commonly used substrate may be used. In some cases, the substrate 110 may comprise an insulating material. For example, several layers including the main channel layer 132 m may be first formed on a semiconductor substrate, and then the semiconductor substrate may be removed and replaced with an insulating substrate.

[0065] The seed layer 121 may be directly disposed on the substrate 110. However, the arrangement is not limited thereto, and other predetermined layers may be provided between the substrate 110 and the seed layer 121. The seed layer 121 is a layer that serves as a seed for the growth of the buffer layer 120, and may be composed of a lattice structure that serves as a seed for the buffer layer 120. The buffer layer 120 may be directly disposed on the seed layer 121. However, the arrangement is not limited thereto, and other predetermined layers may be provided between the seed layer 121 and the buffer layer 120. The seed layer 121 may include one or more materials selected from group III-V materials, such as nitrides containing Al, Ga, In, B, or a combination thereof. The seed layer 121 may be Al x In y Ga 1-x-y N (0≤x≤1, 0≤y≤1, x+y≤1). For example, the seed layer 122 may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or a combination thereof.

[0066] The buffer layer 120 may be disposed on the seed layer 121. The buffer layer 120 may be disposed between the seed layer 121 and the main channel layer 132m. The buffer layer 120 may be a layer for alleviating the difference in lattice constant and thermal expansion coefficient between the seed layer 121 and the main channel layer 132m or for preventing parasitic current (leakage current) from flowing through the main channel layer 132m. The buffer layer 120 may include one or more materials selected from group III-V materials, such as nitrides containing Al, Ga, In, B, or a combination thereof. The buffer layer 120 may be Al x In y Ga 1-x-y N (0≤x≤1, 0≤y≤1, x+y≤1). For example, the buffer layer 120 may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or a combination thereof.

[0067] According to some implementations, the buffer layer 120 of the semiconductor device may include a superlattice layer 124 disposed on the seed layer 121 and a high resistance layer 126 disposed on the superlattice layer 124. The superlattice layer 124 and the high resistance layer 126 may be sequentially disposed on the substrate 110.

[0068] The superlattice layer 124 may be disposed on the seed layer 121. The superlattice layer 124 may be disposed directly on the seed layer 121. However, the arrangement is not limited thereto, and other predetermined layers may be disposed between the seed layer 121 and the superlattice layer 124. The superlattice layer 124 is a layer for alleviating the difference in lattice constant and thermal expansion coefficient between the substrate 110 and the main channel layer 132m, thereby alleviating the tensile stress and compressive stress generated between the substrate 110 and the main channel layer 132m, and according to some implementations, alleviating the stress between all layers formed by growth in the final structure of the semiconductor device. The superlattice layer 124 may include one or more materials selected from group III-V materials, such as nitrides containing Al, Ga, In, B, or a combination thereof. The superlattice layer 124 may be Al x In y Ga 1-x-y N (0≤x≤1, 0≤y≤1, x+y≤1). For example, the superlattice layer 124 may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or a combination thereof.

[0069] In some implementations, the superlattice layer 124 is made of a plurality of layers in which layers containing different materials are alternately stacked. For example, the superlattice layer 124 may have a structure in which a layer made of AlGaN and a layer made of AlN are repeatedly stacked. That is, AlGaN / AlN / AlGaN / AlN / AlGaN / AlN may be stacked in sequence to form a superlattice layer. The number of AlGaN layers and GaN included in the superlattice layer 124 may vary, and the materials included in the superlattice layer 124 may vary. As another example, the superlattice layer 124 may have a structure in which a layer made of AlGaN and a layer made of GaN are repeatedly stacked. That is, AlGaN / GaN / AlGaN / GaN / AlGaN / GaN may be stacked in sequence to form a superlattice layer. In some implementations, when the superlattice layer 124 includes GaN, InN, AlGaN, AllnN, InGaN, AlN, AllnGaN, or combinations thereof, the superlattice layer 124 may have a relatively large n-type semiconductor characteristic, where the electron concentration is greater than the hole concentration, but is not limited thereto.

[0070] The high resistance layer 126 may be disposed on the superlattice layer 124. The high resistance layer 126 may be disposed directly on the superlattice layer 124. However, the arrangement is not limited thereto, and other predetermined layers may be disposed between the superlattice layer 124 and the high resistance layer 126. The high resistance layer 126 may be disposed between the superlattice layer 124 and the main channel layer 132m. The high resistance layer 126 is a layer for preventing leakage current from flowing through the main channel layer 132m, thereby preventing degradation of the semiconductor device. The high resistance layer 126 may be made of a low conductivity material to electrically insulate the substrate 110 from the main channel layer 132m. The high resistance layer may include one or more materials selected from group III-V materials, such as nitrides containing Al, Ga, In, B, or a combination thereof. The high resistance layer 126 may be Al x In y Ga 1-x-y N (0≤x≤1, 0≤y≤1, x+y≤1). For example, the high-resistance layer 126 may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or a combination thereof. The high-resistance layer 126 may be made of a single layer or multiple layers. In some implementations, when the superlattice layer 124 includes GaN, InN, AlGaN, AlInN, InGaN, AlN, AlInGaN, or a combination thereof, the high-resistance layer 126 may have a relatively large n-type semiconductor characteristic, i.e., the electron concentration is greater than the hole concentration, but is not limited thereto.

[0071] The barrier layer 136 may be provided on the main channel layer 132m. The barrier layer 136 may be provided directly on the channel layer 132. However, the arrangement is not limited thereto, and another predetermined layer may also be provided between the main channel layer 132m and the barrier layer 136. An area of ​​the main channel layer 132m that overlaps with the barrier layer 136 and is located between the main source electrode 173m and the main drain electrode 175m may be a main drift region DTRm. The main drift region DTRm may be provided between the main source electrode 173m and the main drain electrode 175m. The main drift region DTRm may refer to a region where carriers move when a potential difference is generated between the main source electrode 173m and the main drain electrode 175m.

[0072] The semiconductor device can be turned on / off depending on whether a voltage is applied to the main gate electrode 155 and / or the magnitude of the voltage applied to the main gate electrode 155 , and accordingly, the movement of carriers in the main drift region DTRm can be enabled or blocked.

[0073] The barrier layer 136 may include one or more materials selected from the group III-V materials, such as nitrides containing Al, Ga, In, B, or a combination thereof. The barrier layer 136 may be Al x In y Ga 1-x-yN (0≤x≤1, 0≤y≤1, x+y≤1). The barrier layer 136 may include GaN, InN, AlGaN, AlInN, InGaN, AlN, AlInGaN, or a combination thereof. The energy band gap of the barrier layer 136 can be adjusted by adjusting the composition ratio of Al and / or In. The barrier layer 136 may be doped with predetermined impurities. The impurities doped into the barrier layer 136 may be p-type dopants that can provide holes. For example, the impurities doped into the barrier layer 136 may be magnesium (Mg). By increasing or decreasing the impurity doping concentration of the barrier layer 136, the threshold voltage, on-resistance, and other characteristics of the semiconductor device may be adjusted.

[0074] The barrier layer 136 may include a semiconductor material having different properties from the main channel layer 132m. The barrier layer 136 may differ from the main channel layer 132m in at least one of polarization properties, energy bandgap, or lattice constant. For example, the barrier layer 136 may include a material having an energy bandgap different from that of the main channel layer 132m. The barrier layer 136 may have a higher energy bandgap than the main channel layer 132m and may have a higher electrical susceptibility than the main channel layer 132m. The barrier layer 136 may induce a two-dimensional electron gas 134 in the main channel layer 132m, which has a relatively low electrical susceptibility. In this regard, the barrier layer 136 may also be referred to as a channel supply layer or a two-dimensional electron gas supply layer. The two-dimensional electron gas 134 may be formed in a portion of the main channel layer 132m disposed below the interface between the main channel layer 132m and the barrier layer 136. The two-dimensional electron gas 134 may have a very high electron mobility.

[0075] The barrier layer 136 may be made of a single layer or multiple layers. When the barrier layer 136 is made of multiple layers, the material of each layer included in the multiple layers may have a different energy band gap. The layers included in the barrier layer 136 may be arranged so that the energy band gap increases as the layer approaches the main channel layer 132m.

[0076] The main gate electrode 155 may be disposed on the barrier layer 136. The main gate electrode 155 may overlap a portion of the barrier layer 136 in the vertical direction (e.g., the thickness direction of the main channel layer 132m). The main gate electrode 155 may overlap a portion of the main drift region DTRm of the main channel layer 132m in the vertical direction (e.g., the thickness direction of the main channel layer 132m). The main gate electrode 155 may be disposed between the main source electrode 173m and the main drain electrode 175m. The main gate electrode 155 may be spaced apart from the main source electrode 173m and the main drain electrode 175m. For example, the main gate electrode 155 may be disposed closer to the main source electrode 173m than to the main drain electrode 175m. For example, the separation distance between the main gate electrode 155 and the main source electrode 173m may be smaller than the separation distance between the main gate electrode 155 and the main drain electrode 175m, but this arrangement is not limited to this.

[0077] The main gate electrode 155 may include a conductive material. For example, the main gate electrode 155 may include a metal, a metal alloy, a conductive metal nitride, a metal silicide, a doped semiconductor material, a conductive metal oxide, or a conductive metal nitride. For example, the main gate electrode 155 may include titanium nitride (TiN), tantalum carbide (TaC), tantalum nitride (TaN), titanium silicon nitride (TiSiN), tantalum silicon nitride (TaSiN), tantalum titanium nitride (TaTiN), titanium aluminum nitride (TiAlN), tantalum aluminum nitride (TaAlN), tungsten nitride (WN), ruthenium (Ru), titanium aluminum (TiAl), titanium aluminum carbonitride (TiAlC-N), titanium aluminum carbide (TiAlC), titanium carbide (TiC), tantalum carbonitride (TaCN). , tungsten (W), aluminum (Al), copper (Cu), cobalt (Co), titanium (Ti), tantalum (Ta), nickel (Ni), platinum (Pt), nickel-platinum (Ni-Pt), niobium (Nb), niobium nitride (NbN), niobium carbide (NbC), molybdenum (Mo), molybdenum nitride (MoN), molybdenum carbide (MoC), tungsten carbide (WC), rhodium (Rh), palladium (Pd), iridium (Ir), osmium (Os), silver (Ag), gold (Au), zinc (Zn), vanadium (V), or a combination thereof, but is not limited thereto. The main gate electrode 155 may be made of a single layer or a multilayer.

[0078] The gate semiconductor layer 152 may be disposed between the barrier layer 136 and the main gate electrode 155. For example, the gate semiconductor layer 152 may be disposed on the barrier layer 136, and the main gate electrode 155 may be disposed on the gate semiconductor layer 152. The main gate electrode 155 may form a Schottky contact or an Ohmic contact with the gate semiconductor layer 152. The gate semiconductor layer 152 may overlap with the main gate electrode 155 in the vertical direction (e.g., the thickness direction of the main channel layer 132m). The gate semiconductor layer 152 may completely overlap with the main gate electrode 155 in the vertical direction (e.g., the thickness direction of the main channel layer 132m), and the upper surface of the gate semiconductor layer 152 may be completely covered by the main gate electrode 155. For example, the gate semiconductor layer 152 may have substantially the same planar shape as the main gate electrode 155. However, the shape / arrangement is not limited thereto, and the main gate electrode 155 may be positioned to cover at least a portion of the gate semiconductor layer 152.

[0079] The gate semiconductor layer 152 may be disposed between the main source electrode 173m and the main drain electrode 175m. The gate semiconductor layer 152 may be spaced apart from the main source electrode 173m and the main drain electrode 175m. The gate semiconductor layer 152 may be disposed closer to the main source electrode 173m than to the main drain electrode 175m. For example, the separation distance between the gate semiconductor layer 152 and the main source electrode 173m may be smaller than the separation distance between the gate semiconductor layer 152 and the main drain electrode 175m, but the arrangement is not limited thereto.

[0080] In some implementations, the gate semiconductor layer 152 may overlap the main gate electrode 155 in the vertical direction (e.g., the thickness direction of the main channel layer 132 m). For example, the gate semiconductor layer 152 may completely overlap the main gate electrode 155 in the vertical direction (e.g., the thickness direction of the main channel layer 132 m). For example, the side surface of the gate semiconductor layer 152 may be aligned with the side surface of the main gate electrode 155. However, the arrangement is not limited to this, and the gate semiconductor layer 152 may partially overlap the main gate electrode 155.

[0081] The gate semiconductor layer 152 may include one or more materials selected from Group III-V materials, such as nitrides containing Al, Ga, In, B, or a combination thereof. The gate semiconductor layer 152 may be Al x In y Ga 1-x-y N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1, x + y ≤ 1). For example, the gate semiconductor layer 152 may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or a combination thereof. The gate semiconductor layer 152 may include a material with a different energy band gap from that of the barrier layer 136. For example, the gate semiconductor layer 152 may include GaN, while the barrier layer 136 may include AlGaN. The gate semiconductor layer 152 may be doped with predetermined impurities. The impurities doped into the gate semiconductor layer 152 may be p-type dopants that can provide holes. For example, the gate semiconductor layer 152 may include GaN doped with p-type impurities. For example, the gate semiconductor layer 152 may be made of a p-GaN layer. However, this is not limiting and the gate semiconductor layer 152 may be, for example, a p-AlGaN layer. The impurities doped into the gate semiconductor layer 152 may be magnesium (Mg). When combined with a predetermined element adjacent to the impurity (eg, magnesium) doped into the gate semiconductor layer 152, the hole concentration in the gate semiconductor layer 152 may decrease, thereby degrading the characteristics of the semiconductor device. The gate semiconductor layer 152 may be made of a single layer or multiple layers.

[0082] The gate semiconductor layer 152 may form a depletion region DPR in the main channel layer 132m. The depletion region DPR may be disposed within the main drift region DTRm and may have a narrower width than the main drift region DTRm. Because the gate semiconductor layer 152, whose energy bandgap differs from that of the barrier layer 136, is disposed on the barrier layer 136, the energy band level of the portion of the barrier layer 136 that overlaps with the gate semiconductor layer 152 may be increased. Accordingly, a depletion region DPR may be formed in the region of the main channel layer 132m that overlaps with the gate semiconductor layer 152. The depletion region DPR may be a region in the channel path of the main channel layer 132m where the two-dimensional electron gas 134 is not formed or where the electron concentration is lower than that of the remaining region. In other words, the depletion region DPR may represent a region that interrupts the flow of the two-dimensional electron gas 134 within the main drift region DTRm. Due to the presence of the depletion region DPR, current does not flow between the main source electrode 173m and the main drain electrode 175m, and the channel path may be blocked. Accordingly, a semiconductor device according to some implementations may have a normally-off characteristic.

[0083] For example, the semiconductor device according to some implementations may be a normally-off high electron mobility transistor (HEMT). Figure 5 As shown, in a normal state where no voltage is applied to the main gate electrode 155, the depletion region DPR exists, and the semiconductor device according to some implementations may be in a cut-off state. Figure 6 As shown, when a voltage greater than the threshold voltage is applied to the main gate electrode 155, the depletion region DPR disappears, and the two-dimensional electron gas 134 within the main drift region DTRm can be continuously connected without interruption. For example, the two-dimensional electron gas 134 can be formed along the entire channel path between the main source electrode 173m and the main drain electrode 175m, and the semiconductor device according to some implementations can be in an on state. In summary, a semiconductor device can include semiconductor layers with different electrical polarization characteristics, and the semiconductor layer with a larger electrical polarization can induce the two-dimensional electron gas 134 to another semiconductor layer heterojunctioned with it. The two-dimensional electron gas 134 can serve as a channel between the main source electrode 173m and the main drain electrode 175m, and the flow or interruption of the two-dimensional electron gas 134 can be controlled by the bias voltage applied to the main gate electrode 155m. In the gate-off state, the flow of the two-dimensional electron gas 134 is blocked, so current does not flow between the main source electrode 173m and the main drain electrode 175m. As the two-dimensional electron gas 134 continues to flow in the gate-on state, current may flow between the main source electrode 173 m and the main drain electrode 175 m.

[0084] Although the above description describes a case where the semiconductor device is a normally-off high electron mobility transistor, the present disclosure is not limited thereto. For example, according to some implementations, the semiconductor device may be a normally-on high electron mobility transistor. In the case of a normally-on high electron mobility transistor, the gate semiconductor layer 152 may be omitted, and thus the main gate electrode 155 may be directly disposed on the barrier layer 136. For example, the main gate electrode 155 may contact the barrier layer 136. In this structure, when no voltage is applied to the main gate electrode 155, the two-dimensional electron gas 134 may function as a channel, and current may flow between the main source electrode 173m and the main drain electrode 175m. In addition, when a negative voltage is applied to the main gate electrode 155, a depletion region DPR in which the flow of the two-dimensional electron gas 134 is interrupted may appear at the bottom of the main gate electrode 155.

[0085] The seed layer 121, superlattice layer 124, high-resistance layer 126, main channel layer 132m, barrier layer 136, and gate semiconductor layer 152 may be sequentially stacked on the substrate 110. In some implementations, at least one of the seed layer 121, superlattice layer 124, high-resistance layer 126, main channel layer 132m, barrier layer 136, and gate semiconductor layer 152 may be omitted. The seed layer 121, superlattice layer 124, high-resistance layer 126, main channel layer 132m, barrier layer 136, and gate semiconductor layer 152 may be made of the same base semiconductor material, and the composition ratio of the material of each layer may be different, taking into account the role of each layer and the performance required of the semiconductor device.

[0086] A protective layer 140 may be disposed on the barrier layer 136 and the main gate electrode 155. The protective layer 140 may cover the upper and side surfaces of the main gate electrode 155 and the side surfaces of the gate semiconductor layer 152. The lower surface of the protective layer 140 may contact the barrier layer 136 and the main gate electrode 155. Accordingly, the barrier layer 136, the gate semiconductor layer 152, and the main gate electrode 155 may be protected by the protective layer 140. However, this arrangement is not limited to this, and the main gate electrode 155 may penetrate the protective layer 140 and be connected to the gate semiconductor layer 152. Furthermore, the protective layer 140 may not cover the upper surface of the main gate electrode 155. Alternatively, the lower surface of the protective layer 140 may contact the gate semiconductor layer 152. The protective layer 140 may include an insulating material. For example, the protective layer 140 may include an oxide, such as SiO2 or Al2O3. As another example, the protective layer 140 may include a nitride, such as SiN, or an oxynitride (such as SiON).

[0087] exist Figure 5 and Figure 6 , the protective layer 140 is shown as being made of a single layer, but the present disclosure is not limited thereto, and the protective layer 140 may be made of multiple layers including different materials.

[0088] The main source electrode 173m and the main drain electrode 175m may be disposed on the main channel layer 132m. The main source electrode 173m and the main drain electrode 175m may be in direct contact with the main channel layer 132m and electrically connected to the main channel layer 132m. The main source electrode 173m and the drain electrode 175 may be spaced apart from each other, and the gate electrode 155 and the gate semiconductor layer 152 may be disposed between the source electrode 173 and the drain electrode 175. The main gate electrode 155 and the gate semiconductor layer 152 may be spaced apart from the main source electrode 173m and the main drain electrode 175m. For example, the main source electrode 173m may be electrically connected to the main channel layer 132m on one side of the main gate electrode 155, and the main drain electrode 175m may be electrically connected to the main channel layer 132m on the other side of the main gate electrode 155. The main source electrode 173m and the main drain electrode 175m may be disposed outside the main drift region DTRm of the main channel layer 132m. The boundary surface between the main source electrode 173m and the main channel layer 132m may be one edge of the main drift region DTRm. Likewise, the boundary surface between the main drain electrode 175m and the main channel layer 132m may be the other edge of the main drift region DTRm.

[0089] However, the present disclosure is not limited thereto, and the main source electrode 173m and the main drain electrode 175m may not be disposed on the outer surface of the main drift region DTRm of the main channel layer 132m. For example, the main channel layer 132m may not be recessed, and the main source electrode 173m and the main drain electrode 175m may be disposed on the upper surface of the main channel layer 132m. In this case, the bottom surfaces of the main source electrode 173m and the main drain electrode 175m may contact the upper surface of the main channel layer 132m. The portion of the main channel layer 132m in contact with the main source electrode 173m and the main drain electrode 175m may be doped at a high concentration. In this case, carriers passing through the two-dimensional electron gas 134 can be transferred to the main source electrode 173m and the main drain electrode 175m after passing through the highly doped portion of the main channel layer 132m (i.e., the upper portion of the two-dimensional electron gas 134). The main source electrode 173 m and the main drain electrode 175 m may not directly contact the two-dimensional electron gas 134 in a horizontal direction. Here, the horizontal direction may refer to a direction parallel to the upper surface of the main channel layer 132 m or the barrier layer 136 .

[0090] For example, a groove penetrating the protective layer 140 and the barrier layer 136 and a recessed portion in the upper surface of the main channel layer 132m may be provided on both sides of the main gate electrode 155 so as to be spaced apart from each other. The main source electrode 173m and the main drain electrode 175m may be provided in the grooves located on both sides of the main gate electrode 155, respectively. The main source electrode 173m and the main drain electrode 175m may be formed to fill the grooves. Within the grooves, the main source electrode 173m and the main drain electrode 175m may contact the main channel layer 132m and the barrier layer 136. The main channel layer 132m may form the bottom and sidewalls of the grooves, and the barrier layer 136 may form the sidewalls of the grooves. Accordingly, the main source electrode 173m and the main drain electrode 175m may contact the upper surface and side surfaces of the main channel layer 132m. Furthermore, the main source electrode 173m and the main drain electrode 175m may contact the side surfaces of the barrier layer 136. That is, the main source electrode 173 m and the main drain electrode 175 m may cover side surfaces of the main channel layer 132 m and the barrier layer 136 .

[0091] In some implementations, the main source electrode 173m and the main drain electrode 175m may cover at least a portion of the side surface of the protective layer 140. For example, the main source electrode 173m and the main drain electrode 175m may cover the side surface of the protective layer 140. The upper surfaces of the main source electrode 173m and the main drain electrode 175m may protrude from the upper surface of the protective layer 140. In addition, at least one of the main source electrode 173m and the main drain electrode 175m may cover at least a portion of the upper surface of the protective layer 140. However, the present disclosure is not limited thereto, and the main source electrode 173m and the main drain electrode 175m may cover at least a portion of the side surface of the protective layer 140 and may not cover the remaining portion of the side surface of the protective layer 140. In this case, the remaining portion of the protective layer 140 may be disposed on the upper surfaces of the main source electrode 173m and the main drain electrode 175m.

[0092] The main source electrode 173m and the main drain electrode 175m may include a conductive material. For example, the main source electrode 173m and the main drain electrode 175m may include a metal, a metal alloy, a conductive metal nitride, a metal silicide, a doped semiconductor material, a conductive metal oxide, or a conductive metal nitride. For example, the main source electrode 173m and the main drain electrode 175m may include titanium nitride (TiN), tantalum carbide (TaC), tantalum nitride (TaN), titanium silicon nitride (TiSiN), tantalum silicon nitride (TaSiN), tantalum titanium nitride (TaTiN), titanium aluminum nitride (TiAlN), tantalum aluminum nitride (TaAlN), tungsten nitride (WN), ruthenium (Ru), titanium aluminum (TiAl), titanium aluminum carbonitride (TiAlC-N), titanium aluminum carbide (TiAlC), titanium carbide (TiC), tantalum carbonitride ( The main source electrode 173m and the main drain electrode 175m may be made of a single layer or multiple layers. The main source electrode 173m and the main drain electrode 175m may be in ohmic contact with the main channel layer 132m. The regions in the main channel layer 132m that are in contact with the main source electrode 173m and the main drain electrode 175m may be doped at a relatively higher concentration than other regions.

[0093] Although Figure 5 and Figure 6 The semiconductor device is shown to include a pair of main source electrodes 173m and main drain electrodes 175m, but the number of main source electrodes 173m and main drain electrodes 175m is not limited thereto. For example, the main source electrode 173m may include a plurality of source electrodes sequentially stacked on the main channel layer 132m in a vertical direction (e.g., along the thickness of the main channel layer 132m), and the main drain electrode 175m may include a plurality of drain electrodes sequentially stacked on the main channel layer 132m in a vertical direction (e.g., along the thickness of the main channel layer 132m). Each of the main source electrode 173m and the main drain electrode 175m may include three or more layers.

[0094] The semiconductor device may further include a field diffusion layer covering at least a portion of the protection layer 140 .

[0095] A field diffusion layer may be disposed between the main source electrode 173m and the main drain electrode 175m. The field diffusion layer may cover the main gate electrode 155. The field diffusion layer may overlap the main gate electrode 155 in a vertical direction (e.g., in the thickness direction of the main channel layer 132m). The field diffusion layer may be electrically connected to the main source electrode 173m. For example, the field diffusion layer may be connected to the main source electrode 173m. The field diffusion layer may include the same material as the main source electrode 173m and may be disposed in the same layer as the main source electrode 173m. The field diffusion layer may be formed simultaneously with the main source electrode 173m in the same process. For example, the boundary between the field diffusion layer and the main source electrode 173m may not be clear, and the field diffusion layer may be formed integrally with the main source electrode 173m. However, this arrangement is not limited to this, and the field diffusion layer may be a separate component from the main source electrode 173m. Furthermore, the field diffusion layer may be disposed in a different layer from the main source electrode 173m and may be formed in a different process.

[0096] The field diffusion layer can play a role in diffusing the electric field concentrated around the main gate electrode 155. For example, in the gate-off state, the portion of the main channel layer 132m disposed between the main gate electrode 155 and the main source electrode 173m and the portion of the main channel layer 132m disposed between the main gate electrode 155 and the main drain electrode 175m can have a very high concentration of the two-dimensional electron gas 134. In this case, the electric field will be concentrated on the main gate electrode 155 or the gate semiconductor layer 152. At the same time, the main gate electrode 155 and the gate semiconductor layer 152 are susceptible to the electric field, so when the electric field is concentrated, the leakage current will increase and the breakdown voltage of the main transistor 100 will decrease. In this case, the electric field concentrated around the main gate electrode 155 or the gate semiconductor layer 152 will be diffused by the field diffusion layer, so that the leakage current can be reduced and the breakdown voltage V can be increased. Zth .

[0097] Figure 7 It is along Figure 4 Cross-sectional view taken along lines BB' and CC'. Figure 8 corresponds to Figure 4 A cross-sectional view taken along lines BB' and CC' of FIG. 1 shows a semiconductor device according to some implementations. Figure 4 、 Figure 7 and Figure 8 The peripheral circuit element 300 of the semiconductor device may correspond to Figure 2 The resistor element 310 of the example. In addition, according to Figure 4 、 Figure 7 and Figure 8 The Zener unit 400 of the semiconductor device may correspond to Figure 2Hereinafter, a case where the peripheral circuit element 300 of the semiconductor device is the resistance element 310 and the Zener unit 400 is the Zener diode 410 will be described.

[0098] Reference Figure 4 and Figure 7 The peripheral circuit element 300 of the semiconductor device can be connected to the main drain electrode 175m and can include a sub-channel layer 132s containing a drift region of a two-dimensional electron gas, a barrier layer 136 disposed on the sub-channel layer 132s, a sub-drain electrode 175s and a detection electrode SE disposed on the sub-channel layer 132s, and a sub-source electrode 173s spaced apart from the sub-channel layer 132s.

[0099] The sub-channel layer 132s may be disposed on the substrate 110. The sub-channel layer 132s is a layer that forms a channel between the sub-drain electrode 175s and the detection electrode SE, and a two-dimensional electron gas (2DEG) 134 may be disposed within the sub-channel layer 132s. In some implementations, the two-dimensional electron gas 134 may be generated at the interface between the sub-channel layer 132s and the barrier layer 136 in the semiconductor device. For example, the two-dimensional electron gas 134 may be generated in a portion of the sub-channel layer 132s adjacent to the barrier layer 136.

[0100] In some implementations, the sub-channel layer 132s may include a plurality of portions extending along a first direction (X direction) and a plurality of portions extending along a second direction (Y direction). Figure 4 As shown, the sub-channel layer 132s may alternately include portions extending from one side of the sub-drain electrode 175s in a first direction (X direction) and portions extending in a second direction (Y direction). This shape can be selected to achieve a target length of the sub-channel layer 132s per unit area. However, this is merely an example, and the extension direction of the sub-channel layer 132s is not limited thereto. For example, the sub-channel layer 132s may extend only in one direction from one side of the main channel layer 132m, or may include multiple curved portions. As another example, the sub-channel layer 132s may include portions extending diagonally intersecting the first direction (X direction) and the second direction (Y direction). In some implementations, the sub-channel layer 132s may extend to a predetermined length. Here, the extended length of the sub-channel layer 132s may refer to the total length of the sub-channel layer 132s. The width of the sub-channel layer 132s may be smaller than the width of the main channel layer 132m. Here, the width of the sub-channel layer 132s may refer to the width in a direction perpendicular to the direction in which the sub-channel layer 132s extends. The width of the main channel layer 132m may refer to the width of the main channel layer 132m in the second direction (Y direction). Within this range, the sub-channel layer 132s may function as the resistor 310.

[0101] In some implementations, one end of the sub-channel layer 132s may contact the sub-drain electrode 175s. The sub-channel layer 132s may be electrically connected to the main drain electrode 175m through the sub-drain electrode 175s.

[0102] In some implementations, the sub-channel layer 132s can be integrally formed with the main channel layer 132m of the main transistor 100 through the same process. The sub-channel layer 132s can be disposed on the same layer as the main channel layer 132m. The lower surface of the sub-channel layer 132s can be disposed at the same height as the lower surface of the main channel layer 132m, and the upper surface of the sub-channel layer 132s can be disposed at the same height as the upper surface of the main channel layer 132m. For example, the lower surface of the sub-channel layer 132s can be disposed at the same distance from the lower surface of the main channel layer 132m and the upper surface of the substrate 110. Furthermore, the upper surface of the sub-channel layer 132s can be disposed at substantially the same distance from the upper surface of the main channel layer 132m and the upper surface of the substrate 110. The thickness of the sub-channel layer 132s along the third direction (Z direction) can be substantially the same as the thickness of the main channel layer 132m along the third direction (Z direction), but is not limited thereto. The sub-channel layer 132 s may refer to a portion of the main channel layer 132 m disposed in the peripheral circuit area PA.

[0103] In some implementations, the sub-channel layer 132s includes the same material as the main channel layer 132m disposed in the main element region MA. For example, the sub-channel layer 132s may include one or more materials selected from Group III-V materials, such as nitrides containing Al, Ga, In, B, or combinations thereof.

[0104] The sub-channel layer 132s may be disposed on the substrate 110, and the seed layer 121 and the buffer layer 120 may be disposed between the substrate 110 and the sub-channel layer 132s. The substrate 110, the seed layer 121, and the buffer layer 120 are layers for forming the sub-channel layer 132s and may be omitted in some cases. In some implementations, the substrate 110, the seed layer 121, and the buffer layer 120 disposed in the peripheral circuit area PA may be integrally formed by the same process as the substrate 110, the seed layer 121, and the buffer layer 120 disposed in the main element area MA.

[0105] The barrier layer 136 may be disposed on the sub-channel layer 132s. The barrier layer 136 may be disposed directly on the sub-channel layer 132s. However, this is not limiting, and another predetermined layer may be located between the sub-channel layer 132s and the barrier layer 136. The region of the sub-channel layer 132s that overlaps with the barrier layer 136 may be a drift region. For example, the barrier layer 136 may differ from the sub-channel layer 132s in at least one of polarization characteristics, energy band gap, or lattice constant, and the two-dimensional electron gas 134 may be induced in the sub-channel layer 132s that is relatively less electrically polarized by the barrier layer 136.

[0106] In some implementations, in the peripheral circuit area PA, the sub-channel layer 132s may include a sub-drift region DTRs between the sense electrode SE and the sub-drain electrode 175s. For example, the sub-drift region DTRs may refer to a region of the sub-channel layer 132s extending from the side of the sub-channel layer 132s in contact with the sub-drain electrode 175s to the sense electrode SE. The sub-drift region DTRs may refer to a region of the sub-channel layer 132s overlapping with the barrier layer 136 between the sense electrode SE and the sub-drain electrode 175s. For example, the boundary where the sub-drain electrode 175s intersects the sub-channel layer 132s may be one edge of the sub-drift region DTRs, while the boundary where the sense electrode SE intersects the sub-channel layer 132s may be the other edge of the sub-drift region DTRs. For example, the sub-drift region DTRs may refer to a region within the peripheral circuit area PA where carriers migrate between the sense electrode SE and the side of the sub-channel layer 132s in contact with the sub-drain electrode 175s.

[0107] In some implementations, the sub-drift region DTRs may include a plurality of portions extending along a first direction (X direction) and a plurality of portions extending along a second direction (Y direction). Figure 4 Similar to the illustrated sub-channel layer 132s, the sub-drift region DTRs may alternately include portions extending from one side of the sub-drain electrode 175s in the first direction (X direction) and portions extending in the second direction (Y direction). This shape can be used to achieve a desired length of the sub-drift region DTRs per unit area. However, this is merely an example, and the extension direction of the sub-drift region DTRs is not limited thereto.

[0108] The sub-drift region DTRs may have a resistance component. For example, the sub-drift region DTRs may function as a resistance element having a predetermined resistance value ( Figure 2 For example, a region of the sub-channel layer 132s from the sub-drain electrode 175s to the sensing electrode SE may have a predetermined resistance value.

[0109] A protective layer 140 may be disposed on the barrier layer 136. A lower surface of the protective layer 140 may be in contact with the barrier layer 136. In some implementations, the protective layer 140 is formed integrally with the protective layer 140 of the main element region MA by the same process. For example, the protective layer 140 may be disposed on the barrier layer 136 in the main element region MA and on the barrier layer 136 in the peripheral circuit region PA.

[0110] The sub-drain electrode 175s and the detection electrode SE may be disposed on one side and the other side of the sub-channel layer 132s. The sub-drain electrode 175s and the detection electrode SE may be in contact with the sub-channel layer 132s and electrically connected to the sub-channel layer 132s. The sub-drain electrode 175s and the detection electrode SE may be disposed outside the sub-drift region DTRs. The boundary surface between the sub-drain electrode 175s and the sub-channel layer 132s may be one edge of the sub-drift region DTRs. Similarly, the boundary surface between the detection electrode SE and the sub-channel layer 132s may be the other edge of the sub-drift region DTRs.

[0111] The sub-drain electrode 175s may extend from one end of the main drain electrode 175m in the second direction (Y direction). The sub-drain electrode 175s may refer to a portion of the drain electrode 175 disposed in the peripheral circuit area PA. The detection electrode SE may be a third node ( Figure 2 Accordingly, the detection voltage Va can be transmitted to the Zener unit 400 and the detector 500 through the detection electrode SE.

[0112] In some implementations, the sub-drain electrode 175s and the detection electrode SE are disposed in a recessed space in at least a portion of the sub-channel layer 132s. The sub-drain electrode 175s and the detection electrode SE may penetrate the barrier layer 136 and contact the side surface of the sub-channel layer 132s. The sub-drain electrode 175s and the detection electrode SE may be electrically connected to the sub-drift region DTRs. However, the arrangement is not limited thereto; the sub-channel layer 132s may not be recessed, and the sub-drain electrode 175s and the detection electrode SE may be disposed on the upper surface of the sub-channel layer 132s.

[0113] The sub-drain electrode 175s and the detection electrode SE may cover at least a portion of the upper surface of the protective layer 140, but are not limited thereto. Furthermore, the sub-drain electrode 175s and the detection electrode SE may cover at least a portion of the side surface of the protective layer 140. For example, the sub-drain electrode 175s and the detection electrode SE may cover the side surface of the protective layer 140. The upper surface of the sub-drain electrode 175s and the upper surface of the detection electrode SE may protrude from the upper surface of the protective layer 140.

[0114] In some implementations, the width of the detection electrode SE is substantially the same as the width of the sub-channel layer 132s. Figure 4 As shown, the width of the detection electrode SE in the first direction (X direction) may be substantially equal to the width of the sub-channel layer 132s in the first direction (X direction). However, the width is not limited to this. For example, the width of the detection electrode SE in the first direction (X direction) may be greater than the width of the sub-channel layer 132s in the first direction (X direction). In this case, the detection electrode SE may overlap with the separation structure 160 in the third direction (Z direction), but the arrangement is not limited to this. As another example, the width of the detection electrode SE in the first direction (X direction) may be less than the width of the sub-channel layer 132s in the first direction (X direction).

[0115] The sub-drain electrode 175s and the detection electrode SE may include a conductive material. The sub-drain electrode 175s and the detection electrode SE may include the same material. For example, the sub-drain electrode 175s and the detection electrode SE may include the same material as the main source electrode 173m and the main drain electrode 175m. The sub-drain electrode 175s and the detection electrode SE may be formed using the same process as the sub-drain electrode 175s, the sub-source electrode 173s, the main source electrode 173m, and the main drain electrode 175m. For example, the detection electrode SE may include a metal, a metal alloy, a conductive metal nitride, a metal silicide, a doped semiconductor material, a conductive metal oxide, or a conductive metal nitride. For example, the detection electrode SE may include titanium nitride (TiN), tantalum carbide (TaC), tantalum nitride (TaN), titanium silicon nitride (TiSiN), tantalum silicon nitride (TaSiN), tantalum titanium nitride (TaTiN), titanium aluminum nitride (TiAlN), tantalum aluminum nitride (TaAlN), tungsten nitride (WN), ruthenium (Ru), titanium aluminum (TiAl), titanium aluminum carbonitride (TiAlC-N), titanium aluminum carbide (TiAlC), titanium carbide (TiC), tantalum carbonitride (TaCN), Tungsten (W), aluminum (Al), copper (Cu), cobalt (Co), titanium (Ti), tantalum (Ta), nickel (Ni), platinum (Pt), nickel-platinum (Ni-Pt), niobium (Nb), niobium nitride (NbN), niobium carbide (NbC), molybdenum (Mo), molybdenum nitride (MoN), molybdenum carbide (MoC), tungsten carbide (WC), rhodium (Rh), palladium (Pd), iridium (Ir), osmium (Os), silver (Ag), gold (Au), zinc (Zn), vanadium (V), or a combination thereof, but not limited thereto. The sensing electrode (SE) may be formed of a single layer or multiple layers. The sensing electrode SE may be in ohmic contact with the sub-channel layer 132s. The region in contact with the sensing electrode SE within the sub-channel layer 132s may be doped at a relatively higher concentration than other regions, but not limited thereto.

[0116] The sub-source electrode 173s may be disposed on the other side of the sub-channel layer 132s. The sub-source electrode 173s may be disposed to be spaced apart from the sub-channel layer 132s. For example, Figure 4As shown, the sub-source electrode 173s can be disposed spaced apart from the sub-channel layer 132s in the first direction (X direction). The sub-source electrode 173s can be electrically insulated from the sub-channel layer 132s. For example, the sub-source electrode 173s and the sub-channel layer 132s can be separated from each other by a separation structure 160. The sub-source electrode 173s can extend from one end of the main source electrode 173m in the second direction (Y direction). The sub-source electrode 173s can refer to the portion of the source electrode 173 disposed in the peripheral circuit area PA. In some implementations, the sub-source electrode 173s can include the same material as the sub-drain electrode 175s and the detection electrode SE. Furthermore, the sub-source electrode 173s can include the same material as the main source electrode 173m. The sub-source electrode 173s can be integrally formed with the main source electrode 173m, the sub-drain electrode 175s, and the detection electrode SE in the same process.

[0117] In some implementations, the peripheral circuit element 300 is separated from the main transistor 100 by a separation structure 160. For example, the separation structure can be provided between the peripheral circuit element 300 and the main transistor 100. The separation structure 160 can penetrate the barrier layer 136 and be recessed in at least a portion of the sub-channel layer 132s, but is not limited thereto. Accordingly, the sub-drift region DTRs of the peripheral circuit element 300 can be electrically insulated from the main transistor 100. However, the arrangement is not limited thereto, and as another example, the separation structure 160 can penetrate the barrier layer 136 and the sub-channel layer 132s. As another example, the peripheral circuit element 300 and the main transistor 100 can be separated by a trench that penetrates at least a portion of the sub-channel layer 132s and / or the main channel layer 132m.

[0118] In some implementations, the separation structure 160 may contact the detection electrode SE. Figure 7 As shown, the separation structure 160 may contact one side of the detection electrode SE. However, the arrangement is not limited thereto. As another example, Figure 8 As shown, the barrier layer 136 may also be provided between one side of the detection electrode SE and the separation structure 160 .

[0119] In some implementations, the separation structure 160 is formed by forming a barrier layer 136 above the main channel layer 132 and the sub-channel layer 132s, and performing an ion implantation process within the barrier layer 136 disposed between the main transistor 100 and the peripheral circuit element 300. For example, no or minimal two-dimensional electron gas may be formed in the region of the sub-channel layer 132s that overlaps with the region of the barrier layer 136 where the ion implantation process is performed, and in the region of the sub-channel layer 132s in the third direction (Z direction). The ion implantation region of the barrier layer 136 and the corresponding region of the sub-channel layer 132s may correspond to the separation structure 160. As another example, the separation structure 160 may be formed by performing an ion implantation process on the sub-channel layer 132s. The ion implantation region in the sub-channel layer 132s may correspond to the separation structure 160. The material used in the ion implantation process may be argon (Ar) ions. However, the fabrication of the separation structure is not limited thereto. As another example, the separation structure 160 may be formed by forming a barrier layer 136 on the main channel layer 132 and the sub-channel layer 132s, forming a trench penetrating the barrier layer 136, and then filling the trench with an insulating material. The insulating material providing the separation structure 160 may include the same material as the protective layer 140. For example, the insulating material providing the separation structure 160 may include an oxide, such as SiO2 or Al2O3. As another example, the insulating material providing the separation structure 160 may include a nitride (such as SiN) or an oxynitride (such as SiON). However, the material is not limited thereto, and the insulating material providing the separation structure 160 may include a material different from that of the protective layer 140. At least a portion of the main channel layer 132 and / or the sub-channel layer 132s may be recessed together.

[0120] As described above, the semiconductor device may include the Zener cell 400 and the detector 500. Figure 4 , the Zener unit 400 and the detector 500 can be arranged outside the main element area MA and the peripheral circuit area PA. The Zener unit 400 and the detector 500 can be formed separately from the main transistor 100 and the peripheral circuit element 300 and can be arranged outside the main element area MA and the peripheral circuit area PA, but their arrangement is not limited thereto. For example, the Zener unit 400 can be formed integrally with the main transistor 100 and the peripheral circuit element 300 in the same process.

[0121] In some implementations, the Zener unit 400 may include a Zener diode ( Figure 2410 in FIG. The Zener diode 410 may include a diode having a PN junction structure. The Zener diode 410 may include a semiconductor material. For example, the Zener diode 410 may include silicon (Si), but is not limited thereto. The Zener diode 410 may include the same material as the sub-channel layer 132s. The following description will take the case where the Zener unit 400 includes the Zener diode 410 as an example.

[0122] The Zener diode 410 may be electrically connected between the resistor element 310 and the main transistor 100. For example, the Zener diode 410 may be electrically connected between the detection electrode SE and the sub-source electrode 173s. Accordingly, the Zener diode 410 may be electrically connected to the main source electrode 173m through the sub-source electrode 173s. For example, the anode of the Zener diode 410 ( Figure 2 412) can be electrically connected to the main source electrode 173m through the sub-source electrode 173s, and the Zener diode 410 Figure 2 The cathode 411 in the main transistor 100 may be electrically connected to the detection electrode SE. The detector 500 may be electrically connected to the detection electrode SE. The detector 500 may detect a voltage change at one end of the main transistor 100 by detecting a voltage of the detection electrode SE.

[0123] The peripheral circuit element 300 of the semiconductor device may include a resistance element 310, and the Zener unit 400 may include a Zener diode 410. The detector 500 according to some implementations may detect the voltage of the detection electrode SE clipped by the Zener diode 410 and detect a voltage change at one end of the main transistor 100.

[0124] Figure 9 is a circuit diagram illustrating a resistance unit of a semiconductor device according to some implementations. Figure 10 It shows Figure 9 A top view of a semiconductor device. Figure 11 It is along Figure 10 A cross-sectional view taken along line D-D'. Figure 12 corresponds to Figure 10 , which shows a peripheral circuit element of a semiconductor device according to some implementations. The peripheral circuit element 300 may correspond to Figure 2 The resistor element 310 may include Figure 9 Hereinafter, a case where the peripheral circuit element 300 of the semiconductor device according to some implementations is a resistance element 310 including a plurality of resistance units 310_U will be described. In addition, for better understanding and convenience of description, Figure 9 One resistor unit 310_U is shown.

[0125] Figures 9 to 12Shown for Figures 1 to 8 Various modifications of the semiconductor device described. Figures 9 to 12 Example with Figures 1 to 8 The examples of FIG. 1 are basically similar, so the description of the same elements will be omitted, and the differences will be mainly explained; unless otherwise specified or the context suggests otherwise, the features of one element are also applicable to another element. In addition, the same reference numerals are used for the same components.

[0126] First, refer to Figure 9 , the resistance element 310 may include a plurality of resistance units 310_U. Each of the plurality of resistance units 310_U may include a sub-drift region ( Figure 11 The resistor 312, the first contact resistor 311 and the second contact resistor 313 in the DTRs_U ... Figure 11 The resistor 312 in DTRs_U in FIG1 , the first contact resistor 311, and the second contact resistor 313 may be connected in series. In some implementations, the first contact resistor 311 refers to the resistance of the first contact interface CI1 between the first contact electrode CT1 and the sub-channel layer 132s, and the second contact resistor 313 refers to the resistance of the second contact interface CI2 between the second contact electrode CT2 and the sub-channel layer 132s.

[0127] In some implementations, the resistance value of each of the plurality of resistance units 310_U has a constant value that is independent of temperature. For example, the temperature coefficient of resistance (TCR) of each of the plurality of resistance units 310_U may be approximately 0. However, the temperature dependence is not limited to this, and the resistance value of each of the plurality of resistance units 310_U may increase or decrease with increasing temperature. In some implementations, the sum of the resistance values ​​of the plurality of resistance units 310_U has a constant value regardless of temperature. As another example, the resistance value of each of the plurality of resistance units 310_U may increase or decrease with increasing temperature.

[0128] Next, refer to Figure 10 and Figure 11 , the peripheral circuit element 300 of the semiconductor device may include a plurality of resistance units 310_U. Each of the plurality of resistance units 310_U may include a sub-channel layer 132s, a first contact electrode CT1, and a second contact electrode CT2.

[0129] The sub-channel layer 132s may be disposed between the first contact electrode CT1 and the second contact electrode CT2. The sub-channel layer 132s may extend along the second direction (Y direction), but the arrangement is not limited thereto. In some implementations, the sub-channel layer 132s includes a sub-drift region DTRs_U. The sub-drift region DTRs_U may function as an element having a predetermined resistance value. For example, the region of the sub-channel layer 132s extending from the first contact electrode CT1 to the second contact electrode CT2 may have a predetermined resistance value.

[0130] The resistance of the sub-drift region DTRs_U ( Figure 9 312 in the drift region DTRs_U) can have different values ​​depending on the temperature. For example, the resistance of the drift sub-region DTRs_U ( Figure 9 312) can increase with increasing temperature. For example, the resistance of the sub-drift region DTRs_U ( Figure 9 312 in the sub-drift region DTRs_U) may have a positive temperature coefficient of resistance (TCR). For example, the temperature coefficient of resistance of the sub-drift region DTRs_U may be about 5 (Ω / um°C) to about 15 (Ω / um°C). Accordingly, the resistance ( Figure 9 312) can increase with increasing temperature.

[0131] The first contact electrode CT1 and the second contact electrode CT2 may be disposed on both sides of the sub-channel layer 132s. The first contact electrode CT1 and the second contact electrode CT2 may contact the sub-channel layer 132s and be electrically connected to the sub-channel layer 132s. The first contact electrode CT1 and the second contact electrode CT2 may be disposed outside the sub-drift region DTRs_U. The boundary surface between the first contact electrode CT1 and the sub-channel layer 132s may be one edge of the sub-drift region DTRs_U. Similarly, the boundary surface between the second contact electrode CT2 and the sub-channel layer 132s may be the other edge of the sub-drift region DTRs_U.

[0132] The first and second contact electrodes CT1 and CT2 may be disposed in a recessed space of at least a portion of the sub-channel layer 132s. The first and second contact electrodes CT1 and CT2 may penetrate the barrier layer 136 and contact side surfaces of the sub-channel layer 132s.

[0133] In some implementations, the first contact electrode CT1 and the second contact electrode CT2 contact the barrier layer 136. For example, one side surface of the first contact electrode CT1 and one side surface of the second contact electrode CT2 facing each other may contact the barrier layer 136. In addition, the other side surface opposite to the one side surface of the first contact electrode CT1 and the other side surface opposite to the one side surface of the second contact electrode CT2 may contact the separation structure 160, but is not limited thereto. As another example, Figure 12As shown, the other side surface opposite to one side surface of the first contact electrode CT1 and the other side surface opposite to one side surface of the second contact electrode CT2 may also contact the barrier layer 136. In this case, the barrier layer 136 may also be located between the separation structure 160 and the contact electrodes CT1 and CT2.

[0134] In some implementations, the first contact electrode CT1 and the second contact electrode CT2 form ohmic contact with the sub-channel layer 132s. A first contact interface CI1 between the first contact electrode CT1 and the sub-channel layer 132s, and a second contact interface CI2 between the second contact electrode CT2 and the sub-channel layer 132s, may have a resistance component. For example, during the process in which carriers passing through the two-dimensional electron gas 134 pass through at least a portion of the sub-channel layer 132s (e.g., an upper portion of the two-dimensional electron gas 134) and are transmitted to the detection electrode SE, the first contact interface CI1 between the first contact electrode CT1 and the sub-channel layer 132s, and the second contact interface CI2 between the second contact electrode CT2 and the sub-channel layer 132s, may have a predetermined resistance value. For ease of understanding and description, the resistance of the first contact interface CI1 between the first contact electrode CT1 and the sub-channel layer 132s may correspond to a first contact resistance 311, and the resistance of the second contact interface CI2 between the second contact electrode CT2 and the sub-channel layer 132s may correspond to a second contact resistance 313.

[0135] In some implementations, the first and second contact resistors 311 and 313 may have different values ​​depending on temperature. For example, the first and second contact resistors 311 and 313 may decrease as the temperature increases. For example, the first and second contact resistors 311 and 313 may have a negative temperature coefficient of resistance (TCR). For example, the TCR of the first and second contact resistors 311 and 313 may be approximately -20 (Ω / °C) to approximately -10 (Ω / °C). In some implementations, the TCR of the first and second contact resistors 311 and 313 may be greater than the TCR of the drift sub-region DTRs_U, but is not limited thereto.

[0136] In some implementations, the sum of the first contact resistance 311, the second contact resistance 313, and the resistance 312 of the sub-drift region DTRs_U has a constant value regardless of temperature. However, the resistance is not limited to this, and the sum of the first contact resistance 311, the second contact resistance 313, and the resistance 312 of the sub-drift region DTRs_U may increase or decrease with increasing temperature. In some implementations, the extension length of the sub-drift region DTRs_U may be 1 μm to 10 μm, and preferably 3 μm to 4 μm. This length range has been found to provide a target resistance as a function of temperature.

[0137] The first contact electrode CT1 and the second contact electrode CT2 may be formed simultaneously in the same process as the detection electrode SE. The first contact electrode CT1 and the second contact electrode CT2 may be provided on the same layer as the detection electrode SE. In addition, the first contact electrode CT1 and the second contact electrode CT2 may include the same material as the detection electrode SE.

[0138] The following will refer to Figures 13 to 21 Describe examples of peripheral circuit elements.

[0139] Figure 13 is a circuit diagram illustrating a semiconductor device according to some implementations. Figure 14 It shows Figure 13 A timing diagram of the gate voltage, the first power supply voltage and the detection voltage of the semiconductor device. Figure 15 It shows that according to Figure 13 A top view of an example semiconductor device. Figure 16 It is along Figure 15 A cross-sectional view taken along line EE'. Figure 17 and Figure 18 corresponds to Figure 15 A cross-sectional view taken along line EE' of FIG. 1 is shown, which illustrates peripheral circuit elements of a semiconductor device according to some implementations. Figure 19 is a top view illustrating peripheral circuit elements of a semiconductor device according to some implementations. Figure 20 It is along Figure 18 A cross-sectional view taken along line FF'. Figure 21 is a top view illustrating a semiconductor device according to some implementations.

[0140] Figures 13 to 21 The peripheral circuit elements 300 may correspond to Figure 13 The example diode element 320. In addition, Figures 13 to 21 The Zener cell 400 may correspond to Figure 13 Hereinafter, a case where the peripheral circuit element 300 of the semiconductor device according to some implementations includes the diode element 320 and the Zener unit 400 includes the Zener diode 410 will be described.

[0141] Figures 13 to 21 Shown according to Figures 1 to 8 Various variations of the semiconductor devices of some implementations shown in FIG. Figures 13 to 21 Example with Figures 1 to 8 The examples of FIG. 1 and FIG. 2 are substantially similar, so their similar descriptions will be omitted and the differences will be mainly explained. Unless otherwise specified or the context suggests otherwise, the features of one are applicable to the other. In addition, the same reference numerals are used for the same components.

[0142] First, refer to Figure 13 , the peripheral circuit element 300 of the semiconductor device may include a diode element 320. The semiconductor device may include the diode element 320 and a detection resistor element 420 electrically connected to the Zener diode 410.

[0143] The diode element 320 may be electrically connected to the first electrode D of the main transistor 100. In addition, the diode element 320 may be electrically connected to the Zener diode 410 and the detector 500. For example, the cathode 321 of the diode element 320 may be electrically connected to one end of the main transistor 100 via the first node N1. For example, the cathode 321 of the diode element 320 may be electrically connected to the first electrode D of the main transistor 100 via the first node N1. In some implementations, the cathode 321 of the diode element 320 may be electrically connected to the main drain electrode ( Figure 15 175m in). In addition, the cathode 321 of the diode element 320 can be connected to the first power supply having the first power supply voltage VD through the first node N1. Accordingly, the first power supply voltage V D The anode 322 of the diode element 320 may be electrically connected to the Zener diode 410 and the detector 500 through the third node N3. In some implementations, the cathode 321 of the diode element 320 corresponds to the sub-drain electrode ( Figure 15 175s in), and the anode 322 of the diode element 320 corresponds to the upper electrode ( Figure 15 In addition, the third node N3 may be a node corresponding to the detection electrode ( Figure 15 SE in the middle.

[0144] In some implementations, the diode element 320 may be configured to be larger than the threshold voltage V Oth The forward direction allows current to flow under a forward voltage, but does not allow current to flow under a reverse voltage. Here, the forward direction may refer to the direction from the anode 322 of the diode element 320 toward the cathode 321, and the reverse direction may refer to the direction from the cathode 321 of the diode element 320 toward the anode 322. That is, when the voltage value applied to the anode 322 of the diode element 320 is greater than the voltage value applied to the cathode 321 and the threshold voltage V Oth When the sum of the values ​​of , current can flow into the diode element 320.

[0145] According to some implementations, the detection voltage Va may be applied to the anode 322 of the diode element 320, and the first power supply voltage V D can be applied to the cathode 321 of the diode element 320. Therefore, when the threshold voltage V is subtracted from the value of the detection voltage Va, Oth The value obtained by the value of (Va-VOth , hereinafter referred to as "reference value") is greater than the first power supply voltage V D (Va-V Oth >V D ), the current can flow along the third path C3. In addition, if the reference value is less than the first power supply voltage V D (Va-V Oth <V D ), current does not flow into the diode element 320. The threshold voltage V Oth can be greater than the breakdown voltage V of the Zener diode 410 Zth , but not limited thereto. For example, the threshold voltage V Oth can be less than the breakdown voltage V of the Zener diode 410 Zth According to such characteristics, the diode element 320 can clip the detection voltage Va of the third node N3. Figure 14 Provide a description.

[0146] The detection resistor element 420 can be electrically connected to the diode element 320. One end of the detection resistor element 420 can be electrically connected to the anode 322 of the diode element 320 through the third node N3. In addition, one end of the detection resistor element 420 can be electrically connected to the detector 500 and the cathode 411 of the Zener diode 410 through the third node N3. The other end of the detection resistor element 420 can be electrically connected to the supply voltage V DC The third power supply voltage V DC can be greater than the breakdown voltage V of the Zener diode 410 Zth .

[0147] In some implementations, the detector 500 detects a detection voltage Va of the third node N3. The detector 500 may detect a voltage change at one end of the main transistor 100 based on the detection voltage Va. For example, the detector 500 may detect the first power supply voltage V based on the detection voltage Va. D The value is smaller than the detection voltage Va of the third node N3 and the threshold voltage V of the diode element 320. Oth As another example, the detector 500 may detect the first power supply voltage V based on the detection voltage Va. D and calculates the time period during which the main transistor 100 is turned on.

[0148] Further references Figure 14 , the first power supply voltage V in the first time period T1 and the second time period T2 D The value can be greater than the reference value Va-V OthThis is a case where a reverse voltage is applied to the diode element 320, and current does not flow into the diode element 320. For example, current does not flow along the third path C3. At the same time, the third power supply voltage V DC can be greater than the breakdown voltage V of the Zener diode 410 Zth , and accordingly, the value of the detection voltage Va can be greater than the breakdown voltage V of the Zener diode 410 Zth . This is greater than the breakdown voltage V Zth In the case where a reverse voltage of 1 is applied to the Zener diode 410, current may flow into the Zener diode 410. For example, the current may flow along the fourth path C4. Accordingly, the detection voltage Va in the first time period T1 and the second time period T2 may be substantially equal to the breakdown voltage V of the Zener diode 410. Zth .

[0149] In addition, the first power supply voltage V D The value can be less than the reference value Va-V Oth This is the case where a forward voltage is applied to the diode element 320, and current can flow into the diode element 320. For example, the current can flow along the third path C3. For example, the current can flow from the third power supply voltage V DC The voltage Va flows to the third node N3 through the detection resistance element 420 and flows to the first node N1 through the diode element 320. Accordingly, the voltage across the detection resistance element 420 may drop, and the detection voltage Va may decrease.

[0150] Accordingly, as the detection voltage Va decreases, the value of the detection voltage Va may become smaller than the breakdown voltage V of the Zener diode 410. Zth . This is less than the breakdown voltage V Zth In the case where a reverse voltage is applied to the Zener diode 410, current does not flow into the Zener diode 410. Accordingly, in the third time period T3, the detection voltage Va may be greater than the first power supply voltage V D The changing curves change similarly.

[0151] In addition, in the fourth period T4 and the fifth period T5, the value of the first power voltage VD may be greater than the reference value Va-V Oth This is a case where a reverse voltage is applied to the diode element 320 , and current does not flow in the diode element 320 . In addition, current can flow into the Zener diode 410 .

[0152] Meanwhile, the starting point of the fourth time period T4 may be the point where the diode element 320 is turned off. For example, when the current flows along the third path C3, as the first power supply voltage V DIncrease, the diode element 320 can be turned off at the beginning of the fourth time period T4. At this time, a peak voltage V P For example, the peak voltage V P Can be supplied to the third node N3. Here, the peak voltage V P Can represent the transient voltage due to the ringing phenomenon. In some implementations, even if the peak voltage V P is supplied to the third node N3, the peak voltage V P It is also greater than the breakdown voltage V of the Zener diode 410 Zth , so the detection voltage Va of the third node N3 can be maintained at a certain level (eg, breakdown voltage V Zth In summary, according to the first power supply voltage V D The value of the detection voltage Va of the third node N3 and the threshold voltage V of the diode element 320 Oth The value of the detection voltage Va of the third node N3 may change. The detector 500 may detect that the detection voltage Va of the third node N3 exceeds the predetermined first power supply voltage V D For example, the detector 500 may detect a case where the voltage applied to one end of the main transistor 100 of the semiconductor device exceeds a predetermined range.

[0153] Next, we will refer to Figures 15 to 19 The peripheral circuit element 300 may correspond to Figure 13 Hereinafter, a case where the peripheral circuit element 300 of the semiconductor device is the diode element 320 will be described.

[0154] Reference Figures 15 to 19 The peripheral circuit element 300 may include: a sub-channel layer 132s connected to the main drain electrode 175m and including a drift region having a two-dimensional electron gas, a barrier layer 136 disposed on the sub-channel layer 132s, a sub-gate electrode 185 disposed on the barrier layer 136, and a detection electrode SE and a sub-drain electrode 175s spaced apart from each other on the sub-channel layer 132s.

[0155] The sub-channel layer 132s may extend along the first direction (X direction). Figure 15As shown, the sub-channel layer 132s may extend from one side of the sub-drain electrode 175s along the first direction (X direction). However, this is merely an example; the sub-channel layer 132s may also include a portion extending in a direction intersecting the first direction (X direction) or may include multiple curved portions. In some implementations, one end of the sub-channel layer 132s contacts the sub-drain electrode 175s. The sub-channel layer 132s may be electrically connected to the main drain electrode 175m via the sub-drain electrode 175s.

[0156] The sub-gate electrode 185 may be disposed on the barrier layer 136. The sub-gate electrode 185 may overlap a portion of the barrier layer 136 in the vertical direction (e.g., the thickness direction of the sub-channel layer 132s). The sub-gate electrode 185 may overlap a portion of the sub-drift region DTRs of the sub-channel layer 132s in the vertical direction (e.g., the thickness direction of the sub-channel layer 132s). The sub-gate electrode 185 may be disposed between the sense electrode SE and the sub-drain electrode 175s. The sub-gate electrode 185 may be spaced apart from the sense electrode SE and the sub-drain electrode 175s. For example, the sub-gate electrode 185 may be disposed closer to the sense electrode SE than the sub-drain electrode 175s. For example, the separation distance between the sub-gate electrode 185 and the sense electrode SE may be smaller than the separation distance between the sub-gate electrode 185 and the sub-drain electrode 175s, but is not limited thereto.

[0157] The sub-gate electrode 185 may include a conductive material. The sub-gate electrode 185 may include the same material as the main gate electrode 155. In some implementations, the sub-gate electrode 185 and the main gate electrode 155 are formed simultaneously in the same process. The sub-gate electrode 185 may be disposed on the same layer as the main gate electrode 155. For example, the sub-gate electrode 185 may be disposed on the sub-gate semiconductor layer 182, and the main gate electrode 155 may be disposed on the gate semiconductor layer 152. The lower surface of the sub-gate electrode 185 may be disposed at substantially the same height as the lower surface of the main gate electrode 155. The thickness of the sub-gate electrode 185 along the third direction (Z direction) may be substantially the same as the thickness of the main gate electrode 155 along the third direction (Z direction).

[0158] However, the present disclosure is not limited to the existing arrangement, and the sub-gate electrode 185 may be provided on a different layer from the main gate electrode 155. For example, Figure 17 As shown, the sub-gate electrode 185 may be directly disposed on the upper surface of the barrier layer 136. For example, the sub-gate semiconductor layer 182 may not be disposed between the sub-gate electrode 185 and the barrier layer 136. The sub-gate electrode 185 may contact the upper surface of the barrier layer 136.

[0159] As another example, Figure 18As shown, the sub-gate electrode 185 can be integrally formed with the detection electrode SE in the same process. The sub-gate electrode 185 can include the same material as the detection electrode SE, but is not limited thereto. Alternatively, the sub-gate electrode 185 can include a different material from the detection electrode SE. The sub-gate electrode 185 can be directly disposed on the upper surface of the barrier layer 136, but is not limited thereto. The sub-gate semiconductor layer 182 can also be disposed on the upper surface of the barrier layer 136, and the sub-gate electrode 185 can be disposed on the sub-gate semiconductor layer 182.

[0160] The sub-gate semiconductor layer 182 may be disposed between the barrier layer 136 and the sub-gate electrode 185. For example, the sub-gate semiconductor layer 182 may be disposed on the barrier layer 136, and the sub-gate electrode 185 may be disposed on the sub-gate semiconductor layer 182. The sub-gate electrode 185 may be in Schottky contact or ohmic contact with the sub-gate semiconductor layer 182. The sub-gate semiconductor layer 182 may overlap with the sub-gate electrode 185 in a vertical direction (e.g., in the thickness direction of the sub-channel layer 132s).

[0161] Furthermore, the peripheral circuit element 300 of the semiconductor device may further include a connection portion CP and a through-hole 190. The connection portion CP may extend from one side of the sensing electrode SE along the first direction. The connection portion CP may be disposed on the protective layer 140. The connection portion CP may cover the upper surface of the protective layer 140. The connection portion CP may cover at least a portion of the sub-gate electrode 185. The connection portion CP may overlap with the sub-channel layer 132s in the third direction (Z direction), but is not limited thereto. The through-hole 190 may penetrate the protective layer 140 and connect to the sub-gate electrode 185. The through-hole 190 may electrically connect the connection portion CP to the sub-gate electrode 185.

[0162] In some implementations, the detection electrode SE is integrally formed with the connection portion CP and the through hole 190, but the present disclosure is not limited thereto. For example, the detection electrode SE can be integrally formed with the connection portion CP and the through hole 190 in the same process.

[0163] The connection portion CP may have various shapes. Figure 16 As shown, the connection portion CP may extend along the first direction (X direction). As another example, Figure 19As shown, the connection portion CP may further include a portion extending in a direction intersecting the first direction (X direction). The connection portion CP may include a portion extending in the second direction (Y direction), a portion extending in the first direction (X direction) from the point where the connection portion CP intersects the detection electrode SE, and a portion extending in the second direction (Y direction) from the point where the connection portion CP intersects the through-hole 190. The connection portion CP may overlap with the separation structure 160 in the third direction (Z direction). As another example, the connection portion CP may include multiple curved portions and / or may have a curved shape.

[0164] Accordingly, the detection electrode SE can be electrically connected to the sub-gate electrode 185 through the connection portion CP and the through hole 190. Accordingly, the peripheral circuit element 300 can be used as Figure 13 For example, the upper electrode CT including the detection electrode SE, the sub-gate electrode 185, the connection portion CP and the through hole 190 may be Figure 13 The anode 322 of the diode element 320 in the embodiment of the present invention can be Figure 13 The cathode 321 of the diode element 320 .

[0165] Reference Figure 20 and Figure 21 , the detection resistance element 420 of the semiconductor device may be disposed in the peripheral circuit area PA.

[0166] The detection resistance element 420 of the semiconductor device may include a channel pattern 425 , a first electrode 421 , and a second electrode 422 .

[0167] The channel pattern 425 may extend in the first direction (X direction). For example, the channel pattern 425 may extend in the same direction as the sub-channel layer 132s, but is not limited thereto. Since the remaining description of the channel pattern 425 is substantially the same as that of the sub-channel layer 132s, its description will be omitted.

[0168] In some implementations, the barrier layer 136 may extend over the channel pattern 425. Accordingly, the region of the channel pattern 425 that overlaps with the barrier layer 136 may become a drift region. The channel pattern 425 may include a first drift region 428 located between the first electrode 421 and the second electrode 422. For example, the first drift region 428 may represent a region of the channel pattern 425 from the side of the channel pattern 425 that contacts the second electrode 422 to the first electrode 421. The first drift region 428 may refer to a region between the first electrode 421 and the second electrode 422 where the channel pattern 425 overlaps with the barrier layer 136. For example, the interface where the second electrode 422 intersects the channel pattern 425 may be one edge of the first drift region 428, and the boundary where the first electrode 421 intersects the channel pattern 425 may be the other edge of the first drift region 428. For example, the first drift region 428 may indicate a region where carriers move between the first electrode 421 and a side of the channel pattern 425 that contacts the second electrode 422 .

[0169] The first drift region 428 may have a resistance component. For example, the first drift region 428 may be used as a detection resistance element ( Figure 13 For example, a region of the channel pattern 425 from the first electrode 421 to the second electrode 422 may have a predetermined resistance value.

[0170] The first electrode 421 and the second electrode 422 may penetrate the protective layer 140 and the barrier layer 136 and contact the channel pattern 425. In some implementations, the first electrode 421 is electrically connected to the detection electrode SE. The first electrode 421 may be electrically connected to the Zener unit 400 and the detector 500. The second electrode 422 may be electrically connected to a supply voltage V DC The first electrode 421 and the second electrode 422 may be formed simultaneously with the detection electrode SE in the same process, but their manufacture is not limited thereto.

[0171] exist Figure 20 In the example of FIG. 21 , the detection resistance element 420 is described as being disposed in the peripheral circuit area PA, but the present disclosure is not limited thereto. For example, the detection resistance element 420 may be disposed in the Zener unit 400 . Alternatively, the detection resistance element 420 may be disposed in the detector 500 .

[0172] Below, we will refer to Figures 22 to 25 To describe examples of peripheral circuit elements.

[0173] Figure 22 is a circuit diagram illustrating a semiconductor device according to some implementations. Figure 23 It shows that according to Figure 221 is a timing diagram of a gate voltage, a first power supply voltage, and a detection voltage of a semiconductor device according to an example of FIG. Figure 24 It shows Figure 22 A top view of a semiconductor device. Figure 25 It is along Figure 24 A cross-sectional view taken along line G-G'.

[0174] according to Figures 22 to 25 The peripheral circuit element 300 of the semiconductor device of the example may correspond to Figure 22 The example of the sub-transistor element 330. In addition, according to Figures 22 to 25 The Zener cell 400 of the semiconductor device of the example may correspond to Figure 22 Hereinafter, a case where the peripheral circuit element 300 includes the sub-transistor element 330 and the Zener unit 400 includes the Zener diode 410 will be described.

[0175] Figures 22 to 25 Shown Figures 13 to 21 Various variations of the semiconductor device shown in FIG. Figures 22 to 25 Example with Figures 13 to 21 The examples of FIG. 1 and FIG. 2 are substantially similar, so their description will be omitted and the differences will be mainly explained. Unless otherwise specified or the context suggests otherwise, the features of one are also applicable to the other. In addition, the same reference numerals are used for the same components.

[0176] First, refer to Figure 22 , the peripheral circuit element 300 may include a sub-transistor element 330 .

[0177] The sub-transistor element 330 may be electrically connected to the first electrode D of the main transistor 100. In addition, the sub-transistor element 330 may be electrically connected to the Zener diode 410 and the detector 500. The sub-transistor element 330 may include a gate electrode G1, a first electrode, and a second electrode. The sub-transistor element 330 may control a drain-source current between the first electrode and the second electrode according to a signal applied to the gate electrode G1. The sub-gate voltage V G1 A voltage may be supplied to the gate electrode G1 of the sub-transistor element 330. A first electrode of the sub-transistor element 330 may be connected to the first electrode D of the main transistor 100 via the first node N1. In addition, a first electrode of the sub-transistor element 330 may be connected to a first power supply voltage V D Correspondingly, the first power supply voltage V D The first electrode of the sub-transistor element 330 may be supplied to the first electrode of the sub-transistor element 330. The second electrode of the sub-transistor element 330 may be electrically connected to the Zener diode 410 and the detector 500 through the third node N3. In some implementations, the first electrode of the sub-transistor element 330 may correspond to the sub-drain electrode ( Figure 24 175s in), and the gate electrode G1 of the sub-transistor element 330 may correspond to the sub-gate electrode ( Figure 24 In addition, the third node N3 may be a node corresponding to the detection electrode ( Figure 24 SE in the middle.

[0178] In some implementations, the detector 500 may detect a detection voltage Va of the third node N3. The detector 500 may detect a voltage change at one end of the main transistor 100 based on the detection voltage Va. For example, the detector 500 may detect the first power supply voltage V based on the detection voltage Va. D The value is less than the sub-gate voltage V G1 and the threshold voltage V th The difference in time between.

[0179] Further references Figure 23 , the first power supply voltage V in the first time period T1 and the second time period T2 D The value can be greater than the sub-gate voltage V G1 and the threshold voltage V th This is a case where the sub-transistor element 330 is turned off, and current does not flow into the sub-transistor element 330. The detection voltage Va of the third node N3 may have a predetermined value.

[0180] In addition, the first power supply voltage V D The value can be less than the sub-gate voltage V G1 and the threshold voltage V th This is the case where the sub-transistor element 330 is turned on and current can flow into the sub-transistor element 330. At this time, when the detection voltage Va at the third node N3 is less than the breakdown voltage V of the Zener diode 410 Zth , the current does not flow into the Zener diode 410. Accordingly, in the third time period T3, the detection voltage Va can be greater than the first power supply voltage V D However, the present disclosure is not limited thereto, and the detection voltage Va at the third node N3 may be greater than the breakdown voltage V of the Zener diode 410. Zth In this case, the current may flow along the fifth path C5, and the value of the detection voltage Va of the third node N3 may be equal to the breakdown voltage V of the Zener diode 410. Zth The values ​​are basically the same.

[0181] In addition, the value of the first power supply voltage VD in the fourth period T4 and the fifth period T5 may be greater than the sub-gate voltage V G1 With the threshold voltage Vth At this time, current does not flow through the sub-transistor element 330.

[0182] Meanwhile, the starting point of the fourth time period T4 may be the point at which the sub-transistor element 330 is turned off. D Increase, the sub-transistor element 330 can be turned off at the beginning of the fourth period T4. At this time, the peak voltage V P may appear across the sub-transistor element 330. For example, a peak voltage V P Can be supplied to the third node N3. Here, the peak voltage V P Can represent the transient voltage generated by the ringing phenomenon. In some implementations, when the peak voltage V P When supplied to the third node N3, the peak voltage V P Greater than the breakdown voltage V of the Zener diode 410 Zth , so the current can flow into the Zener diode 410 through the fifth path C5, and the detection voltage Va of the third node N3 can be substantially equal to the breakdown voltage V of the Zener diode 410. Zth For example, even when the peak voltage V P When supplied to the third node N3 , the value of the detection voltage Va of the third node N3 may also be kept constant by the Zener diode 410 .

[0183] In summary, according to the first power supply voltage V D The value of the sub-gate voltage V G1 and the threshold voltage V th The value of the detection voltage Va of the third node N3 may change. The detector 500 may detect that the detection voltage Va of the third node N3 exceeds the predetermined first power supply voltage V D For example, the detector 500 may detect a case where the voltage applied to one end of the main transistor 100 of the semiconductor device exceeds a predetermined range.

[0184] Next, we will refer to Figure 24 and Figure 25 The peripheral circuit element 300 is described. The peripheral circuit element 300 may correspond to Figure 22 Sub-transistor element 330. Hereinafter, a case where the peripheral circuit element 300 is the sub-transistor element 330 will be described.

[0185] Reference Figure 24 and Figure 25The peripheral circuit element 300 of the semiconductor device may include: a sub-channel layer 132s connected to the main drain electrode 175m and including a drift region having a two-dimensional electron gas, a barrier layer 136 disposed on the sub-channel layer 132s, a sub-gate electrode 185 disposed on the barrier layer 136, and a detection electrode SE and a sub-drain electrode 175s spaced apart from each other on the sub-channel layer 132s.

[0186] The sub-channel layer 132s may extend along the first direction (X direction). Figure 24 As shown, the sub-channel layer 132s may extend from one side of the sub-drain electrode 175s along the first direction (X direction). However, this is merely an example; the sub-channel layer 132s may also include a portion extending in a direction intersecting the first direction (X direction) or may include multiple curved portions. In some implementations, one end of the sub-channel layer 132s may contact the sub-drain electrode 175s. The sub-channel layer 132s may be electrically connected to the main drain electrode 175m via the sub-drain electrode 175s.

[0187] The sub-gate electrode 185 may be provided on the barrier layer 136. The sub-gate electrode 185 may correspond to a sub-transistor element ( Figure 22 The gate electrode (330) Figure 22 The sub-gate semiconductor layer 182 may be disposed between the barrier layer 136 and the sub-gate electrode 185. The sub-gate electrode 185 and the sub-gate semiconductor layer 182 are described in detail. Figures 13 to 21 The description of the sub-gate electrode 185 and the sub-gate semiconductor layer 182 of the example is substantially the same and thus will be omitted.

[0188] The detection electrode SE may correspond to a sub-transistor element ( Figure 22 330) of the second electrode, and the sub-drain electrode 175s may correspond to the sub-transistor element ( Figure 22 330 ) first electrode.

[0189] Although this disclosure contains many specific implementation details, these should not be construed as limiting the scope of the claims. Certain features described in this disclosure in the context of separate implementations may also be implemented in combination in a single implementation. Conversely, different features described in the context of a single implementation may also be implemented separately in multiple implementations, or in appropriate sub-combinations. In addition, although the above features may be described as working in certain combinations, in some cases, one or more features in a combination may be deleted from the combination, and the combination may be directed to sub-combinations or variations of sub-combinations.

[0190] Although examples of the present disclosure have been described in detail, it should be understood that the disclosure is not limited to the disclosed examples, but, on the contrary, is intended to cover various modifications and equivalent arrangements.

Claims

1. A semiconductor device comprising: Main transistor; a peripheral circuit element electrically connected to the first source or drain of the main transistor; as well as a Zener diode electrically connected between the second source or drain of the main transistor and the peripheral circuit element, Wherein, the main transistor includes: Main channel layer; a barrier layer on the main channel layer and comprising a material having an energy band gap different from an energy band gap of the main channel layer; a main gate electrode on the barrier layer; a gate semiconductor layer disposed between the barrier layer and the main gate electrode; and a main source electrode and a main drain electrode, provided on both sides of the main gate electrode and electrically connected to the main channel layer, Wherein, the peripheral circuit elements include: a sub-channel layer electrically connected to the main drain electrode and including a drift region having a two-dimensional electron gas; and a detection electrode on the sub-channel layer, and The Zener diode is electrically connected between the detection electrode and the main source electrode.

2. The semiconductor device according to claim 1, wherein: The peripheral circuit element includes: a sub-drain electrode electrically connected to the sub-channel layer, and The sub-drain electrode is provided on the same layer as the main drain electrode.

3. The semiconductor device according to claim 2, wherein The peripheral circuit element includes: a sub-source electrode electrically connected to the main source electrode and spaced apart from the sub-channel layer, wherein the sub-source electrode is provided on the same layer as the main source electrode, and The sub-channel layer is provided on the same layer as the main channel layer.

4. The semiconductor device according to claim 1, wherein The anode of the Zener diode is electrically connected to the main source electrode, and A cathode of the Zener diode is electrically connected to the detection electrode.

5. The semiconductor device according to claim 1, wherein The width of the sub-channel layer is smaller than the width of the main channel layer. The semiconductor device according to claim 1 , wherein: The peripheral circuit element includes a resistance element including a resistance of the drift region of the sub-channel layer between the main drain electrode and the detection electrode.

7. The semiconductor device according to claim 6, wherein The resistance element includes a contact electrode on the sub-channel layer and arranged between the detection electrode and the main drain electrode.

8. The semiconductor device according to claim 7, wherein The contact electrode is provided on the same layer as the detection electrode and includes the same material as the detection electrode.

9. The semiconductor device according to claim 1, wherein The peripheral circuit elements include: a sub-drain electrode electrically connected to the sub-channel layer and provided on the same layer as the main drain electrode; and The sub-gate electrode is on the sub-channel layer and is arranged between the detection electrode and the sub-drain electrode.

10. The semiconductor device according to claim 9, wherein The sub-gate electrode is provided on the same layer as the main gate electrode, and the sub-gate electrode includes the same material as the main gate electrode.

11. The semiconductor device according to claim 9, wherein The peripheral circuit element includes a diode element, and the diode element includes the sub-gate electrode. wherein the sub-gate electrode is electrically connected to the detection electrode, and The breakdown voltage of the Zener diode is lower than the threshold voltage of the diode element.

12. The semiconductor device according to claim 9, wherein: The barrier layer extends over the sub-channel layer, and The barrier layer is arranged between the sub-channel layer and the sub-gate electrode.

13. The semiconductor device according to claim 12, wherein The peripheral circuit element includes a sub-gate semiconductor layer arranged between the barrier layer and the sub-gate electrode.

14. The semiconductor device according to claim 12, wherein The peripheral circuit elements include: a protective layer covering the barrier layer; and The connecting portion is on the protection layer and connects the sub-gate electrode to the detection electrode.

15. The semiconductor device according to claim 1, further comprising: A separation structure is arranged between the peripheral circuit element and the main transistor on the sub-channel layer, and the separation structure extends into the barrier layer.

16. A semiconductor device comprising: Main transistor; a resistor element electrically connected to the first source or drain of the main transistor; as well as a Zener diode electrically connected between the second source or drain of the main transistor and the resistance element, Wherein, the main transistor includes: Main channel layer; a barrier layer on the main channel layer and comprising a material having an energy band gap different from an energy band gap of the main channel layer; a gate electrode, disposed on the barrier layer; a gate semiconductor layer disposed between the barrier layer and the gate electrode; and a main source electrode and a main drain electrode provided on both sides of the gate electrode and electrically connected to the main channel layer, Wherein, the resistance element includes: a sub-channel layer electrically connected to the main drain electrode and including a drift region having a two-dimensional electron gas; a sub-drain electrode electrically connected to a first side of the sub-channel layer and extending from one end of the main drain electrode; and a detection electrode electrically connected to the second side of the sub-channel layer, Wherein, the width of the sub-channel layer is smaller than the width of the main channel layer, and The Zener diode is electrically connected between the detection electrode and the main source electrode.

17. The semiconductor device according to claim 16, wherein: The barrier layer extends over the sub-channel layer, and The sub-drain electrode and the detection electrode extend into the barrier layer.

18. A semiconductor device comprising: Main transistor; a sub-transistor element electrically connected to the first source or drain of the main transistor; as well as a Zener diode electrically connected between the second source or drain of the main transistor and the sub-transistor element, Wherein, the main transistor includes: Main channel layer; a barrier layer on the main channel layer and comprising a material having an energy band gap different from an energy band gap of the main channel layer; a gate electrode on the barrier layer; a gate semiconductor layer, disposed between the barrier layer and the gate electrode; and a main source electrode and a main drain electrode provided on both sides of the gate electrode and electrically connected to the main channel layer, Wherein, the sub-transistor element includes: a sub-channel layer electrically connected to the main drain electrode and including a drift region having a two-dimensional electron gas; a sub-drain electrode electrically connected to the sub-channel layer and extending from one end of the main drain electrode; a detection electrode electrically connected to the sub-channel layer; and a sub-gate electrode on the sub-channel layer and arranged between the sub-drain electrode and the detection electrode, and The Zener diode is electrically connected between the detection electrode and the main source electrode.

19. The semiconductor device according to claim 18, wherein A threshold voltage of the sub-transistor element is greater than a breakdown voltage of the Zener diode.

20. The semiconductor device according to claim 18, wherein The barrier layer extends over the sub-channel layer, and wherein the sub-transistor element comprises: a protective layer covering the barrier layer and the sub-gate electrode; and The connecting portion is on the protection layer and electrically connects the sub-gate electrode and the detection electrode.

Images