THBC laminated perovskite battery and preparation method thereof

Abstract

The invention discloses a THBC laminated perovskite cell and a preparation method thereof, and relates to the technical field of solar cells. The THBC laminated perovskite cell is prepared by the following method: providing an ITO glass substrate; forming an electron transport layer, a perovskite light absorption layer, a hole transport layer, a first transparent conductive oxide layer and a top electrode on the ITO glass substrate to obtain a top cell; providing an N-type substrate; sequentially forming a passivation layer and an antireflection layer on the front surface of the N-type substrate; forming a passivation contact structure, a tunneling PN junction, a second transparent conductive oxide layer and a metal electrode on the back surface of the N-type substrate to obtain a bottom cell; cutting, stacking, aligning, electrically connecting and packaging the top cell and the bottom cell to obtain a THBC laminated perovskite cell; wherein the hole transport layer is a Cs0. 33WO3 / P3HT composite layer; and the passivation contact structure and the tunneling PN junction are arranged in parallel. According to the preparation method disclosed by the invention, the photoelectric conversion efficiency and the production yield of the THBC laminated perovskite cell are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a THBC stacked perovskite cell and a preparation method thereof. Background Art

[0002] Solar cells, with their environmentally friendly and abundant energy storage potential, are considered the most promising source of green energy. Perovskite solar cells have attracted significant international attention due to their low cost, ease of fabrication, and excellent photoelectric conversion performance. They have also seen rapid development, with cell conversion efficiency increasing from 3.8% in 2009 to 22.1% in 2016. Perovskite materials are considered the light-absorbing materials of the next generation of low-cost solar cells. Because perovskites and silicon have different band gaps, to fully utilize the solar spectrum, perovskite solar cells can be used as top cells in a tandem solar cell stacked with silicon cells, known as perovskite-silicon tandem solar cells. This perovskite-silicon tandem solar cell not only broadens the cell's spectral response, improves solar cell efficiency, but also reduces fabrication costs. However, perovskite-silicon tandem solar cells still suffer from various optical losses during the photoelectric conversion process, which reduces short-circuit current and significantly limits cell efficiency gains.

[0003] Solar cells are microelectronic devices that directly convert sunlight into electricity. After years of development, they have evolved into a variety of structures, including PERC (Passivated Emitter and Rear Cell), TOPCon (Tunnel Oxide Passivated Contact Solar Cell), and HJT (Heterojunction with Intrinsic Thin Layer). Currently, TOPCon cells are undoubtedly the mainstream, considering both cell efficiency and manufacturing cost. To better leverage the advantages of various cells, technicians are adapting the TOPCon passivated contact structure to back-contact cells, creating a new type of TOPCon-BC cell, or TBC cell. TOPCon cells can also be combined with HJT technology to create TOPCon-HJT-BC cells, or THBC cells. TOPCon cells offer high conversion efficiency and compatibility with PERC production lines. HJT cells have a shorter production process with fewer steps, and their modules exhibit low light-induced degradation and high stability. However, both technologies have their own technical drawbacks. TOPCon has a low open-circuit voltage, while HJT has a high open-circuit voltage but suffers from high front-side light loss and low current, making it difficult for either to achieve higher conversion efficiency. Therefore, how to achieve the complementary advantages of HJT and TOPCon and thereby improve photoelectric conversion efficiency has become a pressing technical challenge for those skilled in the art. Summary of the Invention

[0004] The purpose of the present invention is to provide a THBC laminated perovskite battery and a preparation method thereof to solve the following technical problems: Existing THBC solar cells have problems of low photoelectric conversion efficiency and low production yield.

[0005] The purpose of the present invention can be achieved through the following technical solutions: A method for preparing a THBC stacked perovskite cell comprises at least the following steps: Provide ITO glass substrate; forming an electron transport layer, a perovskite light absorption layer, a hole transport layer, a first transparent conductive oxide layer and a top electrode on the ITO glass substrate in sequence to obtain a top cell; Providing an N-type substrate; forming a passivation layer and an anti-reflection layer in sequence on the front surface of the N-type substrate; forming a passivation contact structure, a tunneling PN junction, a second transparent conductive oxide layer and a metal electrode in sequence on the back side of the N-type substrate to obtain a bottom cell; Cutting, stacking, aligning, electrically connecting and packaging the top cell and the bottom cell to obtain a THBC stacked perovskite cell; Wherein, the hole transport layer is Cs 0.33 WO3 / P3HT composite layer; The passivation contact structure and the tunneling PN junction are arranged in parallel.

[0006] As a further embodiment of the present invention, the method for preparing the top battery comprises at least the following steps: The ITO glass substrate was cleaned and treated with UV-ozone; forming an electron transport layer on the ITO glass substrate; coating a perovskite precursor solution on the electron transport layer and forming a perovskite light absorption layer after annealing; coating the modified hole transport slurry on the perovskite light absorbing layer to form a hole transport layer; forming a first transparent conductive oxide layer on the hole transport layer; A top electrode is formed on the first transparent conductive oxide layer to obtain a top cell.

[0007] As a further embodiment of the present invention, the method for preparing the modified hole transport slurry comprises at least the following steps: Cs 0.33 WO3 is dispersed in isopropanol to form Cs 0.33 WO3 dispersion; The Cs 0.33The WO3 dispersion was mixed with the P3HT chlorobenzene solution to obtain a modified hole transport slurry.

[0008] As a further embodiment of the present invention: 0.33 Cs in WO3 dispersion 0.33 The particle size of WO3 is 30-40nm, the Cs 0.33 WO 3的 The mass fraction is 15-20%, the concentration of the P3HT chlorobenzene solution is 8-10 mg / mL, and the Cs 0.33 The volume ratio of the WO3 dispersion to the P3HT chlorobenzene solution is 15-20:1.

[0009] As a further embodiment of the present invention, the method for preparing the perovskite light absorbing layer comprises at least the following steps: Dissolving lead halide and organic amine salt in an organic solvent and stirring to obtain a perovskite precursor solution; applying the perovskite precursor solution on the electron transport layer, adding an anti-solvent dropwise, and performing an annealing treatment to obtain a perovskite light absorption layer; The organic amine salt comprises at least one of methylamine iodide and formamidine iodine, or a mixture of the two. The organic solvent is a mixed solvent of N,N-dimethylformamide and dimethyl sulfoxide. The antisolvent is one of chlorobenzene and toluene, or a mixture of the two.

[0010] As a further embodiment of the present invention, the material of the first transparent conductive oxide layer is one or a combination of indium tin oxide, fluorine-doped tin oxide, indium zinc oxide, antimony-doped tin oxide, aluminum-doped zinc oxide or zinc oxide; the material of the second transparent conductive oxide layer is one or a combination of indium tin oxide, fluorine-doped tin oxide, indium zinc oxide, antimony-doped tin oxide, aluminum-doped zinc oxide or zinc oxide.

[0011] As a further solution of the present invention: the material of the electron transport layer is TiO2, SnO2, ZnO, ZnO2, C60 fullerene and its derivatives, SnZnO x , SrTiO3 or TiSnO x One or a mixture of several.

[0012] As a further solution of the present invention: the preparation method of the bottom cell comprises at least the following steps: Cleaning and polishing the N-type substrate; Performing a texturing process on the front surface of the N-type substrate to form a passivation layer; forming an anti-reflection layer on the passivation layer; forming a tunneling oxide layer on the back side of the N-type substrate; forming a polysilicon layer on the tunnel oxide layer; performing N-type doping on the polysilicon layer to form an N-type polysilicon layer and a phosphate glass protective layer; removing the phosphate glass protective layer, a portion of the N-type polysilicon layer, and a portion of the tunneling oxide layer to expose a portion of the N-type substrate to form a passivation contact structure; forming an intrinsic amorphous silicon layer on the exposed portion of the N-type substrate; Performing P-type doping on the intrinsic amorphous silicon layer to form a P-type amorphous silicon layer, thereby forming a tunneling PN junction; forming a second transparent conductive oxide layer on the N-type polysilicon layer and the P-type amorphous silicon layer; Etching a portion of the second transparent conductive oxide layer and a portion of the intrinsic amorphous silicon layer until a portion of the intrinsic amorphous silicon layer is exposed; A metal electrode is formed on the passivation contact structure and the tunneling PN junction to obtain a bottom cell.

[0013] As a further solution of the present invention: the thickness of the tunneling oxide layer is 1-2 nm, the thickness of the N-type polysilicon layer is 50-100 nm, the thickness of the intrinsic amorphous silicon layer is 1-10 nm, and the thickness of the P-type amorphous silicon layer is 50-100 nm.

[0014] A THBC stacked perovskite cell, comprising at least a top cell and a bottom cell; The structure of the top cell is, from top to bottom according to the light incident direction, a top electrode, a first transparent conductive oxide layer, a hole transport layer, a perovskite light absorption layer, an electron transport layer and an ITO glass substrate; The structure of the bottom cell is, from top to bottom according to the light incident direction, an anti-reflection layer, a passivation layer, an N-type substrate, a passivation contact structure, a tunneling PN junction, a second transparent conductive oxide layer, and a metal electrode, wherein the passivation contact structure and the tunneling PN junction are arranged in parallel on the N-type substrate; The tunnel PN junction includes an intrinsic amorphous silicon layer disposed close to the N-type substrate, and a P-type amorphous silicon layer disposed away from the N-type substrate; The passivation contact structure includes a tunneling oxide layer disposed close to the N-type substrate and an N-type polysilicon layer disposed away from the N-type substrate.

[0015] As a further solution of the present invention: the mass ratio of the mixed solution in B2: maleic anhydride: N,N-dimethylformamide: triethylamine: deionized water is 2500-4500:200-500:3.5-7.

[0016] Beneficial effects of the present invention: This invention uses a perovskite cell as the top cell and a TOPCon-HJT cell as the bottom cell, forming a four-terminal structure through mechanical stack coupling to produce a THBC stacked perovskite cell. The top cell uses a perovskite cell, which has the advantage of high light absorption due to its direct and adjustable band gap. The bottom cell uses a crystalline silicon narrow-bandgap THBC. The high open-circuit voltage (Voc) of the HJT combined with the high short-circuit current (Jsc) of the TOPCon improves the overall photoelectric conversion efficiency, thereby greatly improving light utilization and conversion efficiency, and thus improving cell efficiency. Furthermore, the perovskite cell and the crystalline silicon cell are formed separately and then mechanically combined, avoiding damage to the perovskite layer or silicon-based passivation layer caused by high-temperature processes, thereby improving production yield.

[0017] The bottom cell of the present invention is a THBC structure cell, combining the advantages of HJT technology and TOPCon technology. A passivation layer and an anti-reflection layer are formed on the front side of the substrate. The passivation layer acts as a surface passivation, reducing the recombination rate on the silicon wafer surface and improving the open-circuit voltage and conversion efficiency of the cell. The anti-reflection layer performs the dual functions of optical anti-reflection and protecting the silicon wafer. An alternating passivation contact structure and a tunneling PN junction are formed on the back side of the substrate. The tunneling PN junction includes an intrinsic amorphous silicon layer and a P-type amorphous silicon layer, which acts as an excellent passivation contact. The intrinsic amorphous silicon layer can improve the open-circuit voltage and fill factor of the solar cell, thereby improving the cell's conversion efficiency. The P-type amorphous silicon layer can form a PN junction, reducing optical losses and improving the cell's fill factor and conversion efficiency. The passivation contact structure includes a tunneling oxide layer and an N-type polysilicon layer, forming an excellent passivation contact, solving the problem of poor passivation of P-type TOPCon contacts, significantly reducing back-side current parasitic absorption, contact resistivity, and metal contact recombination. Furthermore, the present invention uses an N-type silicon wafer as a substrate, which has a high tolerance to impurities and a long scoop life, further improving the battery conversion efficiency.

[0018] The present invention utilizes inorganic material Cs 0.33 The composite material formed by doping WO3 with P3HT is used as the hole transport layer material of the perovskite top cell. The inorganic material cesium tungsten bronze compound is composed of three elements: cesium, tungsten and oxygen, with a non-stoichiometric ratio and a special oxygen octahedral structure. This structure gives cesium tungsten bronze powder a series of excellent properties, such as low resistivity, low-temperature superconducting properties and excellent optical properties. Therefore, its doping with P3HT helps to accelerate the transport of carriers in the hole transport layer, reduce the obstruction and recombination loss of holes during the transport process, and improve the collection efficiency of photogenerated carriers. In addition, Cs 0.33 The doping of WO3 gives P3HT excellent conductivity and deeper energy levels, optimizes the extraction and transmission paths of holes and inhibits the recombination of carriers at the interface, thereby improving the battery conversion efficiency. DETAILED DESCRIPTION

[0019] The following is a clear and complete description of the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of the present invention.

[0020] Example 1 The preparation method of the modified hole transport slurry comprises the following steps: Cs will be purchased 0.33 WO3 nanoparticles are dispersed in isopropanol, where Cs 0.33 The particle size of WO3 nanoparticles is 30nm, and the mass fraction of Cs is 20%). 0.33 WO3 dispersion; The above dispersion was mixed with a 10 mg / mL P3HT chlorobenzene solution at a volume ratio of 15:1 to obtain a modified hole transport slurry.

[0021] Example 2 The preparation method of the top battery includes the following steps: The ITO glass substrate with a smooth surface and good light transmittance was ultrasonically cleaned with a detergent solution, deionized water, acetone and ethanol in sequence to remove surface impurities and oil stains. After drying with nitrogen, it was treated with ultraviolet light-ozone to improve the hydrophilicity and surface energy of the substrate surface and enhance the adhesion of the subsequent thin film to the substrate. Titanium dioxide nanoparticles are dispersed in an ethanol solution to form a uniform slurry. The slurry is evenly coated on an ITO glass substrate using a spin coating or doctor blade coating process, and then annealed at a high temperature to form a dense, uniform, and well-crystalline electron transport layer. PbI2 and methylamine iodide are dissolved in a mixed solvent of N,N-dimethylformamide and dimethyl sulfoxide according to a stoichiometric ratio and stirred to form a clear and transparent perovskite precursor solution. The precursor solution is evenly coated on the electron transport layer by spin coating. During the spin coating process, an anti-solvent method is used to promote perovskite crystallization. The coated sample is annealed on a hot plate to cause a chemical reaction in the perovskite precursor, forming a perovskite light absorption layer with good crystal structure and photoelectric properties. The modified hole transport slurry prepared in Example 1 was spin-coated on the perovskite light absorption layer at a speed of 3000 rpm / s for 30 seconds and annealed at 100° C. for 5 minutes to form a hole transport layer; Using PVD technology, a first transparent conductive oxide layer is deposited on the hole transport layer; A metal electrode is partially deposited on the first transparent conductive oxide layer using a thermal evaporation or magnetron sputtering process. The electrode thickness is generally controlled at 100-200 nm to form a top electrode and obtain a top battery.

[0022] Example 3 The preparation method of the bottom cell includes the following steps: Select N-type silicon wafer as the substrate, use NH4OH / H2O2 / H2O mixed solution, clean at 75℃ for 600s, rinse with hot water at 70℃ for 600s, then clean with 20%wt potassium hydroxide solution at 80℃ for 150s, and then rinse with hot water at 70℃ for 600s.

[0023] The substrate is heated at 500-600°C and oxygen is introduced to allow silicon atoms on the surface of the silicon wafer to react with oxygen to grow a tunneling oxide layer with a thickness of about 1.6 nm. Subsequently, an 80 nm polysilicon layer is grown in a SiH4 atmosphere. In an atmosphere of POCL3 and O2, the polysilicon layer is N-type doped and subjected to high-temperature diffusion at 900-110°C to form an N-type polysilicon layer and a phosphate glass protective layer. The phosphate glass protective layer protects the phosphorus-doped polysilicon layer on the back from being damaged during subsequent laser windowing of the light-receiving surface and texturing of the front non-metallic contact area. The front side of the substrate is etched with NaOH to form a velvet structure, which increases light absorption and reduces light reflection, thereby improving the efficiency of the battery in utilizing sunlight and increasing the short-circuit current. By ALD, an aluminum oxide film is formed on the front of the substrate as a passivation layer, which plays a role in surface passivation, thereby reducing the recombination rate on the silicon wafer surface and improving the open circuit voltage and conversion efficiency of the battery; SiN was deposited on the passivation layer by plasma enhanced chemical vapor deposition x The layer plays the dual role of optical anti-reflection and protection of silicon wafer; Through precise laser etching, part of the phosphate glass protective layer on the N-type polysilicon layer is removed, exposing part of the N-type polysilicon layer to facilitate subsequent wet etching; By wet etching, HF is used to remove the expanded phosphate glass protective layer and the N-type polysilicon layer exposed after laser etching, until part of the N-type polysilicon layer and the tunnel oxide layer are removed to expose the substrate. The etched tunnel oxide layer and the N-type polysilicon layer form a passivation contact structure; selectively depositing intrinsic amorphous silicon on the exposed substrate surface by plasma enhanced chemical vapor deposition technology to form an intrinsic amorphous silicon layer, and then forming a P-type amorphous silicon layer on the intrinsic amorphous silicon layer, wherein the thickness of the intrinsic amorphous layer is the same as the thickness of the tunneling oxide layer, the thickness of the P-type amorphous silicon layer is the same as the thickness of the N-type polycrystalline silicon layer, and the intrinsic amorphous silicon layer and the P-type amorphous silicon layer form a tunneling PN junction; Using PVD technology, such as magnetron sputtering, to deposit a second transparent conductive oxide layer on the P-type amorphous silicon layer and the N-type polycrystalline silicon layer, which serves as the transparent conductive electrode of the battery; Through precise laser etching, the second transparent conductive oxide layer between the P-type amorphous silicon layer and the N-type polysilicon layer and the contacting portion of the P-type amorphous silicon layer and the N-type polysilicon layer are removed to prevent the positive and negative electrodes from short-circuiting and causing leakage. Metal electrodes are formed on the second transparent conductive oxide layer at positions corresponding to the passivation contact structure area and the tunnel PN junction area. Metal materials are printed or electroplated at designated positions using a screen printing process to form metal electrodes for collecting current. The battery with the prepared metal electrodes is annealed to ensure good solidified contact between the metal electrodes and the silicon wafer surface, ensuring qualified tensile strength and preventing falling off, thereby obtaining a bottom battery.

[0024] Example 4 A method for preparing a THBC stacked perovskite cell is prepared by the following method: The bottom cell prepared in Example 3 and the top cell prepared in Example 2 were laser cut according to the designed dimensions, ensuring that the cutting edges were neat and without damage, to obtain battery cells; Processing the edges of the cells to remove any burrs and impurities that may be present, thereby improving the mechanical stability and electrical performance of the cells; The top cell and bottom cell are stacked using a high-precision mechanical stacking device, with the glass substrate side (i.e., light incident side) of the top cell facing downward and the anti-reflection layer side (i.e., light incident side) of the bottom cell facing upward, so that a gap is left between the first transparent conductive oxide layer of the top cell and the anti-reflection layer of the bottom cell. An optical alignment system and a mechanical positioning device are used to ensure precise alignment between the two, so that light can effectively pass through the top cell and illuminate the bottom cell. Make independent electrical connections on the top battery cell and the bottom battery cell, and use metal wires or conductive tape to lead the positive and negative electrodes of the battery to form a four-terminal structure to ensure a firm and reliable electrical connection and low contact resistance to reduce energy loss; The stacked battery components and packaging materials are layered together in a certain order and placed in a laminator. Ethylene-vinyl acetate copolymer film and glass cover are used for lamination and packaging to form a sealed battery module to prevent the battery from being corroded by external moisture, oxygen, etc., thereby improving the stability and service life of the battery.

[0025] Comparative Example 1 The preparation method of the top battery includes the following steps: Compared with Example 2, in Comparative Example 1, an equal amount of the modified hole transport slurry prepared in Example 1 was replaced with a 10 mg / mL P3HT chlorobenzene solution, and the remaining components and preparation method were completely consistent with those in Example 2.

[0026] Comparative Example 2 A method for preparing a THBC laminated perovskite cell comprises the following steps: Compared with Example 4, in Comparative Example 2, the top cell prepared in Example 2 is replaced by the top cell prepared in Comparative Example 1, and the remaining components and preparation method are completely consistent with those in Example 4.

[0027] Performance testing The THBC stacked perovskite cell prepared in Example 4 was tested for cell efficiency, along with the THBC stacked perovskite cell prepared in Comparative Example 2, a traditional TOPCon cell, a TBC cell, and a THBC cell. The average efficiency of the traditional TOPCon cell was 25.69%, the average efficiency of the TBC cell was 25.96%, and the average efficiency of the traditional THBC cell was 26.01%. The average efficiency of the THBC stacked perovskite cell prepared in Comparative Example 2 was 27.98%, and the average efficiency of the THBC stacked perovskite cell prepared by the preparation method of Example 4 was 28.68%. The THBC stacked perovskite cell prepared by the preparation method provided by the present invention has significant advantages in efficiency over traditional TOPCon cells, TBC cells, and HBC cells, and the cell efficiency is further improved by modifying the hole transport layer.

[0028] The above is a detailed description of an embodiment of the present invention. However, the content described is only a preferred embodiment of the present invention and should not be considered to limit the scope of the present invention. All equivalent changes and improvements made within the scope of the present invention should still fall within the scope of the patent coverage of the present invention.

Claims

1. A method for preparing a THBC laminated perovskite battery, characterized in that: At least the following steps are included: Provide ITO glass substrate; forming an electron transport layer, a perovskite light absorption layer, a hole transport layer, a first transparent conductive oxide layer and a top electrode on the ITO glass substrate in sequence to obtain a top cell; Providing an N-type substrate; forming a passivation layer and an anti-reflection layer in sequence on the front surface of the N-type substrate; forming a passivation contact structure, a tunneling PN junction, a second transparent conductive oxide layer and a metal electrode in sequence on the back side of the N-type substrate to obtain a bottom cell; Cutting, stacking, aligning, electrically connecting and packaging the top cell and the bottom cell to obtain a THBC stacked perovskite cell; Wherein, the hole transport layer is Cs 0.33 WO3 / P3HT composite layer; The passivation contact structure and the tunneling PN junction are arranged in parallel.

2. The method for preparing a THBC laminated perovskite battery according to claim 1, characterized in that: The method for preparing the top cell comprises at least the following steps: The ITO glass substrate was cleaned and treated with UV-ozone; forming an electron transport layer on the ITO glass substrate; coating a perovskite precursor solution on the electron transport layer and forming a perovskite light absorption layer after annealing; coating the modified hole transport slurry on the perovskite light absorbing layer to form a hole transport layer; forming a first transparent conductive oxide layer on the hole transport layer; A top electrode is formed on the first transparent conductive oxide layer to obtain a top cell.

3. The method for preparing a THBC laminated perovskite battery according to claim 2, characterized in that: The preparation method of the modified hole transport slurry comprises at least the following steps: Cs 0.33 WO3 is dispersed in isopropanol to form Cs 0.33 WO3 dispersion; The Cs 0.33 The WO3 dispersion was mixed with the P3HT chlorobenzene solution to obtain a modified hole transport slurry.

4. The method for preparing a THBC laminated perovskite battery according to claim 3, characterized in that: The Cs 0.33 Cs in WO3 dispersion 0.33 The particle size of WO3 is 30-40nm, the Cs 0.33 WO 3的 The mass fraction is 15-20%, the concentration of the P3HT chlorobenzene solution is 8-10 mg / mL, and the Cs 0.33 The volume ratio of the WO3 dispersion to the P3HT chlorobenzene solution is 15-20:

1.

5. The method for preparing a THBC laminated perovskite battery according to claim 2, characterized in that: The method for preparing the perovskite light absorbing layer comprises at least the following steps: Dissolving lead halide and organic amine salt in an organic solvent and stirring to obtain a perovskite precursor solution; applying the perovskite precursor solution on the electron transport layer, adding an anti-solvent dropwise, and performing an annealing treatment to obtain a perovskite light absorption layer; The organic amine salt comprises at least one of methylamine iodide and formamidine iodine, or a mixture of the two. The organic solvent is a mixed solvent of N,N-dimethylformamide and dimethyl sulfoxide. The antisolvent is one of chlorobenzene and toluene, or a mixture of the two.

6. The method for preparing a THBC laminated perovskite battery according to claim 1, characterized in that: The material of the first transparent conductive oxide layer is one or a combination of indium tin oxide, fluorine-doped tin oxide, indium zinc oxide, antimony-doped tin oxide, aluminum-doped zinc oxide or zinc oxide; the material of the second transparent conductive oxide layer is one or a combination of indium tin oxide, fluorine-doped tin oxide, indium zinc oxide, antimony-doped tin oxide, aluminum-doped zinc oxide or zinc oxide.

7. The method for preparing a THBC laminated perovskite battery according to claim 2, characterized in that: The materials of the electron transport layer are TiO2, SnO2, ZnO, ZnO2, C60 fullerene and its derivatives, SnZnO x , SrTiO3 or TiSnO x One or a mixture of several.

8. The method for preparing a THBC laminated perovskite battery according to claim 1, characterized in that: The method for preparing the bottom cell comprises at least the following steps: Cleaning and polishing the N-type substrate; Performing a texturing process on the front surface of the N-type substrate to form a passivation layer; forming an anti-reflection layer on the passivation layer; forming a tunneling oxide layer on the back side of the N-type substrate; forming a polysilicon layer on the tunnel oxide layer; performing N-type doping on the polysilicon layer to form an N-type polysilicon layer and a phosphate glass protective layer; removing the phosphate glass protective layer, a portion of the N-type polysilicon layer, and a portion of the tunneling oxide layer to expose a portion of the N-type substrate to form a passivation contact structure; forming an intrinsic amorphous silicon layer on the exposed portion of the N-type substrate; Performing P-type doping on the intrinsic amorphous silicon layer to form a P-type amorphous silicon layer, thereby forming a tunneling PN junction; forming a second transparent conductive oxide layer on the N-type polysilicon layer and the P-type amorphous silicon layer; Etching a portion of the second transparent conductive oxide layer and a portion of the intrinsic amorphous silicon layer until a portion of the intrinsic amorphous silicon layer is exposed; A metal electrode is formed on the passivation contact structure and the tunneling PN junction to obtain a bottom cell.

9. The method for preparing a THBC laminated perovskite battery according to claim 8, characterized in that: The thickness of the tunneling oxide layer is 1-2 nm, the thickness of the N-type polysilicon layer is 50-100 nm, the thickness of the intrinsic amorphous silicon layer is 1-10 nm, and the thickness of the P-type amorphous silicon layer is 50-100 nm.

10. A THBC laminated perovskite battery, characterized in that: At least a top cell and a bottom cell; The structure of the top cell is, from top to bottom according to the light incident direction, a top electrode, a first transparent conductive oxide layer, a hole transport layer, a perovskite light absorption layer, an electron transport layer and an ITO glass substrate; The structure of the bottom cell is, from top to bottom according to the light incident direction, an anti-reflection layer, a passivation layer, an N-type substrate, a passivation contact structure, a tunneling PN junction, a second transparent conductive oxide layer, and a metal electrode, wherein the passivation contact structure and the tunneling PN junction are arranged in parallel on the N-type substrate; The tunnel PN junction includes an intrinsic amorphous silicon layer disposed close to the N-type substrate, and a P-type amorphous silicon layer disposed away from the N-type substrate; The passivation contact structure includes a tunneling oxide layer disposed close to the N-type substrate and an N-type polysilicon layer disposed away from the N-type substrate.