Quantum dot-containing composite, quantum dot composition including quantum dot-containing composite, and electronic device including quantum dot-containing composite

Abstract

The quantum dot-containing compound comprises quantum dots, a ligand A and a ligand B. And the ligand B is coordinated on the surface of the quantum dot. Ligand A includes a hydrophilic moiety, a hydrophobic moiety, and a curable moiety, and ligand B includes a hydrophobic moiety.

Claims

1. A quantum dot-containing composite comprising: quantum dots; as well as Ligand A and ligand B, where The ligand B is coordinated with the surface of the quantum dot, The ligand A comprises a hydrophilic portion, a hydrophobic portion and a curable portion, and The ligand B includes a hydrophobic portion. 2 . The quantum dot-containing complex according to claim 1 , wherein the hydrophobic portion of the ligand A and the hydrophobic portion of the ligand B are bonded to each other via van der Waals forces. 3 . The quantum dot-containing complex according to claim 1 , wherein the curable portion of the ligand A is a thermally curable portion. 4 . The quantum dot-containing complex according to claim 1 , wherein the ligand A is a compound in which the hydrophilic portion, the curable portion, and the hydrophobic portion are bonded in this order.

5. The quantum dot complex according to claim 1, wherein the hydrophilic portion, the hydrophobic portion and the curable portion of the ligand A are bonded to the substrate by SP 3 The carbon bonds connect each other. The quantum dot-containing complex according to claim 1 , wherein the hydrophobic portion of the ligand B is coordinated to the surface of the quantum dot.

7. The quantum dot-containing complex of claim 1, wherein the hydrophobic portion of the ligand A does not coordinate to the surface of the quantum dot.

8. The quantum dot-containing composite according to claim 1, wherein The hydrophobic portion of the ligand A faces inwardly toward the quantum dot, and The hydrophilic portion of the ligand A faces outward from the quantum dot, so that the ligand A forms a micelle. 9 . The quantum dot-containing complex according to claim 1 , wherein the curable portions of the ligand A are covalently bonded to each other to form a single molecule. 10 . The quantum dot-containing complex according to claim 1 , wherein the hydrophobic portion of the ligand B has a length equal to or less than that of the hydrophobic portion of the ligand A.

11. The quantum dot complex according to claim 1, wherein the ligand A comprises a compound represented by one of Formulas 1 to 3: [Formula 1] [a] l1 -[b] m1 -[c] n1 [Formula 2] [a] l2 -[c] n2 -[b] m2 [Formula 3] [b] m3 -[a] l3 -[c] n3 In Formulas 1 to 3, a is a group represented by Formula 1-1 or Formula 1-2, [Formula 1-1] [Formula 1-2] b is a group represented by formula 2-1, [Formula 2-1] c is a group represented by Formula 3-1, Formula 3-2 or Formula 3-3, [Formula 3-1] [Formula 3-2] [Formula 3-3] l1 to l3, m1 to m3 and n1 to n3 are each independently an integer of 1 to 5, when l1 is 2 or greater, two or more a's in Formula 1 are the same as or different from each other, when l2 is 2 or greater, two or more a's in Formula 2 are the same as or different from each other, when l3 is 2 or greater, two or more a's in Formula 3 are the same as or different from each other, when n1 is 2 or greater, two or more c's in Formula 1 are the same as or different from each other, when n2 is 2 or greater, two or more c's in Formula 2 are the same as or different from each other, When n3 is 2 or greater, two or more c in Formula 3 are the same as or different from each other, and In Formula 1-1, Formula 1-2, Formula 2-1, and Formula 3-1 to Formula 3-3, * represents a bond except that * at one end of a molecule represents hydrogen.

12. The quantum dot composite according to claim 1, wherein the quantum dot has a core-shell structure, and the core-shell structure comprises: a core comprising a semiconductor compound; as well as a shell comprising an oxide material, a semiconductor compound, or a combination thereof, and The oxide material includes metal oxide, metalloid oxide, non-metal oxide or a combination thereof.

13. The quantum-dot-containing composite according to claim 12, wherein the semiconductor compound comprises: Group II-VI semiconductor compounds; Group III-V semiconductor compounds; Group III-VI semiconductor compounds; Group I-III-VI semiconductor compounds; Group IV-VI semiconductor compounds; Group IV elements or compounds; or any combination thereof.

14. The quantum dot-containing composite according to claim 12, wherein the oxide material comprises SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, or any combination thereof.

15. The quantum dot composite of claim 12, wherein the semiconductor compound comprises CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZ nSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, GaN, GaP, GaAs, GaSb, A lN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, I nAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInP Sb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, InZnP, InGaZnP, InAlZnP, GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se 3. InTe, InGaS3, InGaSe3, AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, Si, Ge, SiC, SiGe or any combination thereof.

16. The quantum-dot composite of claim 12, wherein the semiconductor compound in the shell comprises CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

17. A quantum dot composition comprising the quantum dot complex according to claim 1.

18. An electronic device comprising the quantum-dot composite according to claim 1.

19. The electronic device according to claim 18, further comprising: Color filters and / or color conversion layers, wherein The color filter and / or the color conversion layer includes the quantum-dot composite.

20. The electronic device according to claim 18, wherein the electronic device comprises a light emitting device, the light emitting device comprising: a first electrode; a second electrode facing the first electrode; as well as an interlayer between the first electrode and the second electrode, The interlayer includes an emissive layer, and The emission layer includes the quantum-dot complex.

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