Fluid nozzle for patterning apparatus environment of lithographic apparatus

Abstract

A fluid nozzle for a patterning apparatus environment of a lithographic apparatus includes an elongate structure having an upper surface and a lower surface, at least one lower opening disposed in the lower surface of the elongate structure, and a conduit connected to the at least one lower opening, the at least one lower opening configured to provide a fluid flow delivered via the conduit.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority from European application 23155978.2, filed on February 10, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present invention relates to a fluid nozzle for a photolithography apparatus. Background Art

[0004] A lithographic apparatus is a machine configured to apply a desired pattern to a substrate. For example, a lithographic apparatus can be used in the manufacture of integrated circuits (ICs). For example, a lithographic apparatus can project a pattern from a patterning device (e.g., a mask) onto a layer of radiation-sensitive material (resist) disposed on a substrate.

[0005] To project a pattern onto a substrate, a lithography apparatus can use electromagnetic radiation. The wavelength of this radiation determines the minimum size of features that can be formed on the substrate. Compared to radiation using, for example, deep ultraviolet (DUV) radiation with a wavelength of 193 nm, lithography apparatuses using extreme ultraviolet (EUV) radiation with a wavelength in the 4 nm to 20 nm range (e.g., 6.7 nm or 13.5 nm) can be used to form smaller features on a substrate.

[0006] Contaminants within the lithographic apparatus may negatively impact the accuracy with which the pattern is projected from the patterning device onto the substrate. Therefore, the environment in which the patterning device resides may require periodic cleaning. In this document, this environment may be referred to as the patterning device environment. For example, the patterning device environment may be cleaned when no patterning device is present in the patterning device environment (the patterning device is removable and may be periodically removed for cleaning or replaced with a different patterning device having a different pattern).

[0007] Cleaning of the patterning tool environment may, for example, include directing a gas towards the surface to be cleaned within the patterning tool environment. However, in existing lithographic apparatuses, the effectiveness of such cleaning may be limited.

[0008] It would be desirable to provide a fluid nozzle that overcomes or alleviates one or more problems associated with the prior art. Summary of the Invention

[0009] According to a first aspect of the present invention, a fluid nozzle for a patterning device environment of a lithography apparatus is provided, the fluid nozzle comprising an elongated structure having an upper surface and a lower surface, at least one lower opening arranged in the lower surface of the elongated structure, and a conduit connected to the at least one lower opening, the at least one lower opening being configured to provide a fluid flow transported via the conduit.

[0010] The elongated structure may have a horizontal orientation.

[0011] Advantageously, the fluid nozzle provides efficient cleaning of a lithographic patterning tool environment.The fluid nozzle can provide efficient cleaning of a mask blade.

[0012] According to a second aspect of the present invention, a fluid nozzle for a patterning device environment of a lithography apparatus is provided, the fluid nozzle comprising an elongated structure having an upper surface and a lower surface, at least one upper opening arranged in the upper surface of the elongated structure, and a conduit connected to the at least one upper opening, the at least one upper opening being configured to provide a fluid flow transported via the conduit.

[0013] The elongated structure may have a horizontal orientation.

[0014] Advantageously, the fluid nozzle provides efficient cleaning of a lithographic patterning tool environment.The fluid nozzle can provide efficient cleaning of a patterning tool support structure.

[0015] According to a third aspect of the present invention, a fluid nozzle for a patterning device environment of a lithography apparatus is provided, the fluid nozzle comprising an elongated structure having an upper surface and a lower surface, at least one upper opening arranged in the upper surface of the elongated structure, at least one lower opening arranged in the lower surface of the elongated structure, and a conduit connected to the at least one upper opening and the at least one lower opening, the at least one upper opening and the at least one lower opening being configured to provide a fluid flow transported via the conduit.

[0016] The elongated structure may have a horizontal orientation.

[0017] The at least one lower opening and / or the at least one upper opening may be configured to provide a fluid jet.

[0018] The at least one lower opening and / or the at least one upper opening may comprise a series of openings extending through the elongated structure.

[0019] The at least one lower opening and / or the at least one upper opening may be provided adjacent an edge forming a portion of the elongated structure.

[0020] A portion of the conduit may extend above the at least one lower opening. The conduit portion may be wider than the at least one lower opening.

[0021] The area of ​​the lower opening may be smaller than the area of ​​the upper opening.

[0022] The at least one upper opening and / or the at least one lower opening may have a width of at most 4 mm.

[0023] The at least one lower opening may be oriented at an angle of between 20° and 70° relative to a plane perpendicular to the elongated structure.

[0024] The at least one upper opening may be oriented at an angle of between 20° and 70° relative to a plane perpendicular to the elongated structure.

[0025] The fluid nozzle may further include an opening disposed in an end wall of the elongated structure.

[0026] The elongated structure may include a main body portion and an additional portion. At least one lower opening may be provided in a lower surface of the main body portion and / or the additional portion. At least one upper opening may be provided in an upper surface of the main body portion and / or the additional portion.

[0027] According to a fourth aspect of the present invention, there is provided a lithographic patterning apparatus environment comprising a fluid nozzle according to any of the preceding aspects of the present invention, wherein at least one lower opening provided in a lower surface of the elongated structure is located above a shielding blade. The shielding blade may extend between the patterning apparatus support structure and the shielding blade.

[0028] According to a fifth aspect of the present invention, a lithography apparatus is provided, which includes the lithography patterning device environment of the fourth aspect of the present invention and also includes a fluid supply device configured to supply fluid to at least one lower opening at a flow rate that provides a shear stress of 50 Pa or greater at the shielding blade.

[0029] According to a sixth aspect of the present invention, there is provided a lithographic patterning apparatus environment comprising a fluid nozzle according to any preceding aspect of the present invention, wherein at least one upper opening provided in an upper surface of the elongated structure is located below a patterning apparatus support structure.

[0030] According to the seventh aspect of the present invention, a lithography device is provided, which includes the lithography patterning equipment environment of the sixth aspect of the present invention, and also includes a fluid supply device, which is configured to supply fluid to at least one lower opening at a flow rate that provides a shear stress of 50 Pa or greater at the patterning equipment support structure.

[0031] The fluid supply may be configured to supply air.

[0032] According to an eighth aspect of the present invention, there is provided a method for cleaning a patterned device environment of a lithography apparatus, the method comprising providing a fluid to an elongated structure of a fluid nozzle, and directing the fluid from at least one lower opening arranged in a lower surface of the elongated structure so that the fluid is incident on a shielding blade of the patterned device environment at a flow rate that is sufficiently high to remove contaminant particles from the shielding blade.

[0033] According to the ninth aspect of the present invention, a method for cleaning a patterned equipment environment of a lithography apparatus is provided, the method comprising providing a fluid to a slender structure of a fluid nozzle, and directing the fluid from at least one upper opening arranged in the upper surface of the slender structure, so that the fluid is incident on a cleaning mask or a support structure at a flow rate that is high enough to remove contaminant particles from the cleaning mask or the support structure in the patterned equipment environment.

[0034] The fluid may be directed at an angle between 20° and 70° relative to a vertical plane.

[0035] The fluid may be air.

[0036] Features of different aspects of the invention may be combined. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Embodiments of the present invention will now be described, by way of example only, with reference to the accompanying drawings, in which:

[0038] - Figure 1 Schematically depicts a light source including a fluid nozzle according to an embodiment of the present invention.

[0039] Engraving system;

[0040] - Figure 2 A patterning system of a photolithography system including a fluid nozzle is schematically depicted in side cross-section.

[0041] Optimize equipment environment;

[0042] - Figure 3 schematically depicts the fluid nozzle in more detail;

[0043] - Figure 4 schematically depicting the distal end of the fluid nozzle in greater detail; and

[0044] - Figure 5 A cross section of a fluid nozzle viewed from above is schematically depicted. DETAILED DESCRIPTION

[0045] Figure 1 A lithographic system is shown comprising a radiation source SO and a lithographic apparatus LA. The radiation source SO is configured to generate an EUV radiation beam B and provide the EUV radiation beam B to the lithographic apparatus LA. The lithographic apparatus LA comprises an illumination system IL, a support structure MT configured to support a patterning device MA (e.g., a mask), a projection system PS, and a substrate table WT configured to support a substrate W.

[0046] The illumination system IL is configured to condition the EUV radiation beam B before the EUV radiation beam B is incident on the patterning device MA. The illumination system IL may include a faceted field mirror arrangement 10 and a faceted pupil mirror arrangement 11. The faceted field mirror arrangement 10 and the faceted pupil mirror arrangement 11 together provide a desired cross-sectional shape and a desired intensity distribution for the EUV radiation beam B. In addition to or in place of the faceted field mirror arrangement 10 and the faceted pupil mirror arrangement 11, the illumination system IL may include other mirrors or devices.

[0047] After being so conditioned, the EUV radiation beam B interacts with the patterning device MA. As a result of this interaction, a patterned EUV radiation beam B' is generated. The projection system PS is configured to project the patterned EUV radiation beam B' onto the substrate W. For this purpose, the projection system PS may include a plurality of mirrors 13, 14 configured to project the patterned EUV radiation beam B' onto the substrate W held by the substrate table WT. The projection system PS may apply a reduction factor to the patterned EUV radiation beam B' so as to form an image having features that are smaller than corresponding features on the patterning device MA. For example, a reduction factor of 4 or 8 may be applied. Although the projection system PS is Figure 1 While illustrated in FIG. 1 as having only two mirrors 13 , 14 , the projection system PS may comprise a different number of mirrors (eg six or eight mirrors).

[0048] The patterning device MA and other components can be disposed within a housing 24. The interior defined by the housing can be referred to as a patterning device environment 25. The housing 24 can be substantially enclosed, except for an opening at the bottom end of the housing. Masking blades 20a, 20b are disposed within the patterning device environment 25. Masking blades 20a, 20b are used to selectively mask areas of the patterning device MA so that only desired portions of the patterning device receive EUV radiation at any given time.

[0049] During scanning exposure, the patterning device MA and support structure MT move in the y-direction, and the substrate W and substrate table WT move in the opposite y-direction (or vice versa). In this way, a band of EUV radiation passes through the patterning device MA and through the exposure field on the substrate W.

[0050] A fluid nozzle 100 according to an embodiment of the present invention is disposed within the patterning tool environment 25. The fluid nozzle 100 is positioned between one of the masking blades 20 a and the patterning tool MA plus the support structure MT. During a cleaning process of the patterning tool environment 25, the patterning tool MA may not be within the patterning tool environment, in which case the fluid nozzle 100 is positioned between the masking blade 20 a and the support structure MT. The fluid nozzle 100 will be described in further detail below.

[0051] The radiation source SO, illumination system IL, and / or projection system PS can be provided with a relative vacuum, i.e., a small amount of gas (e.g., hydrogen) at a pressure significantly below atmospheric pressure. The same is true for the patterning device environment 25. That is, a gas at a pressure below atmospheric pressure is present in the patterning device environment 25. For example, the gas can be hydrogen.

[0052] For example, Figure 1 The radiation source SO shown may be of a type known as a laser produced plasma (LPP) source. A laser system 1 (which may comprise a CO2 laser, for example) is arranged to deposit energy via a laser beam 2 into a fuel, such as tin (Sn), provided from, for example, a fuel emitter 3. Although tin is mentioned in the following description, any suitable fuel may be used. The fuel may be, for example, in liquid form and may be, for example, a metal or alloy. The fuel emitter 3 may comprise a nozzle configured to direct tin, for example, in the form of droplets, along a trajectory toward a plasma formation region 4. The laser beam 2 is incident on the tin at the plasma formation region 4. The deposition of laser energy into the tin generates a tin plasma 7 at the plasma formation region 4. During the deexcitation and recombination of electrons with plasma ions, radiation, including EUV radiation, is emitted from the plasma 7.

[0053] EUV radiation from the plasma is collected and focused by a collector 5. The collector 5 comprises, for example, a near-normal incidence radiation collector 5 (sometimes more generally referred to as a normal incidence radiation collector). The collector 5 may have a multilayer mirror structure arranged to reflect EUV radiation (e.g., EUV radiation having a desired wavelength, such as 13.5 nm). The collector 5 may have an elliptical configuration with two focal points. As described below, a first of the focal points may be at the plasma formation region 4, and a second of the focal points may be at the intermediate focus 6.

[0054] The laser system 1 may be spatially separated from the radiation source SO. In this case, the laser beam 2 may be transferred from the laser system 1 to the radiation source SO with the aid of a beam delivery system (not shown) comprising, for example, suitable guide mirrors and / or a beam expander and / or other optical devices. The laser system 1, the radiation source SO, and the beam delivery system may be collectively considered a radiation system.

[0055] The radiation reflected by the collector 5 forms an EUV radiation beam B. The EUV radiation beam B is focused at an intermediate focus 6 to form an image of the plasma present at the plasma formation region 4 at the intermediate focus 6. The image at the intermediate focus 6 serves as a virtual radiation source for the illumination system IL. The radiation source SO is arranged so that the intermediate focus 6 is located at or near an opening 8 in an enclosure 9 of the radiation source SO.

[0056] although Figure 1The radiation source SO is depicted as a laser produced plasma (LPP) source, but any suitable source may be used to generate EUV radiation, such as a discharge produced plasma (DPP) source or a free electron laser (FEL).

[0057] Figure 2 A portion of the lithographic apparatus LA is schematically depicted in more detail. In particular, Figure 2 The housing 24 of the patterning device environment 25, the support structure MT, the patterning device MA, the masking blades 20a, 20b, the fluid nozzle 100, the fluid supply 104 and the fluid extraction system 140 are schematically depicted.

[0058] The support structure MT (with the patterning device MA) is movable in a scanning direction of the lithographic apparatus (which may be referred to as the Y direction), as schematically indicated by a double-headed arrow 30. The support structure MT is depicted at opposite ends of a range of motion in the Y direction. That is, at Figure 2 On the left side, the support structure MT is shown in its leftmost position. Figure 2 , the support structure MT is shown in its rightmost position (using a dashed outline and grey shading, the patterned device MA is not presented for illustrative purposes).

[0059] An opening 26 is provided at the lowermost end of the housing 24. During lithographic exposure, EUV radiation enters the housing 24 through the opening 26, is reflected from the patterning device MA, and then exits through the same opening.

[0060] The fluid nozzle 100 includes an elongated structure 102. In the depicted embodiment, the fluid nozzle 100 extends from a wall of the housing 24. However, the fluid nozzle may have a different arrangement.

[0061] The fluid supply 104 is connected to the fluid nozzle 100, for example, through a wall of the housing 24. The fluid supply may include a valve that is connected to a fluid tank (not shown) via a conduit. The fluid nozzle 100 also includes a conduit 106 that extends from the fluid supply 104 to openings 108, 110 provided in the elongated structure 102. A series of openings 108 are provided on the upper surface of the fluid nozzle 100, and a series of openings 110 are provided on the lower surface of the fluid nozzle. The series of openings 108, 110 extend perpendicular to the scan direction (i.e., in the X direction), as described below in conjunction with FIG. Figure 5 A series of openings 108, 110 extend through the elongated structure 102. The series of openings 108, 110 may be disposed adjacent an edge 114 that forms a portion of the elongated structure.

[0062] In one embodiment, the fluid nozzle 100 may further include an additional portion 115 located on the opposite side of the exposure slit region A that is irradiated by EUV radiation during photolithography exposure. Therefore, the fluid nozzle may include the main portion 113 and the additional portion 115. Figure 5 The features of this embodiment are further described. The openings 150, 160 can be provided in the additional portion. The openings 150, 160 in the additional portion can have the same characteristics as the openings described herein in conjunction with the main body portion 113. The openings 150, 160 in the additional portion 115 can be provided in addition to or as an alternative to the openings in the main body portion 113. In other embodiments, the additional portion 115 can be omitted. In other embodiments, the additional portion 115 can exist but may not have openings. In other embodiments, the additional portion 115 can have openings, but these openings can have different characteristics than the openings provided in the main body portion.

[0063] The fluid extraction system 140 can include an inlet connected to one or more pumps (not shown).The fluid extraction system 140 is configured to remove fluid (eg, gas) from the patterning device environment 25, and thereby remove contaminants carried by the fluid. Figure 2 Four fluid extraction systems are depicted in FIG. However, this is merely illustrative and any number of fluid extraction systems may be provided. The fluid extraction systems 140 may be distributed around the patterning device environment 25 .

[0064] In use, when the substrate is not subjected to photolithographic exposure, a cleaning process can be performed. The cleaning process described herein is performed with reference to the fluid provided from the main body portion 113. However, the cleaning process can additionally or alternatively provide fluid from the additional main body portion 115 (if the additional main body portion exists). The cleaning process can be referred to as a rinse operation. Before performing the cleaning process, the patterning device MA used for photolithographic exposure can be removed from the patterning device environment 25. The clean patterning device MA (which can be referred to as a clean mask) can be loaded onto the support structure MT. The clean mask MA can be analyzed after cleaning is completed to see how many contaminants are on the clean mask. This will provide an indication of the cleanliness level of the patterning device environment 25. The analysis of the clean mask MA can include removing the clean mask from the lithographic apparatus LA and using a tool to find contaminants on the clean mask. The clean mask MA is typically not used during photolithographic exposure.

[0065] During the cleaning process, a fluid jet 116 is discharged from the upper opening 108 upward toward the support structure MT and the cleaned reticle MA. The fluid can be air or another gas. The fluid can be air that has been cleaned to minimize airborne contaminants (for example, water can also be removed from the air). The following description refers to air. However, other fluids can be used instead of air. This also applies to the fluid 118 discharged from the lower opening 110.

[0066] Openings 110 are designed to provide air jets 116 extending in the X-direction (i.e., orthogonal to the scan direction) as air strips. Providing air jets as air strips is advantageous because it provides a strong cleaning effect. That is, for a given air (or other fluid) flow rate to the nozzle, a stronger cleaning effect can be provided compared to, for example, providing air as a two-dimensional array corresponding to the dimensions of the reticle. In general, embodiments of the present invention can advantageously provide fluid jets as fluid strips (e.g., from a series of openings). The fluid strips can extend perpendicular to the scan direction of the lithographic apparatus. The fluid can be air.

[0067] The orientation of the opening 108 will determine the orientation of the air jet 116 (the air jet can have the same orientation as the opening). The air jet 116 can be substantially vertical (as shown), i.e., extending in the Z direction. Alternatively, the air jet 116 can be at an angle of less than 90° relative to the Z direction, so that the air jet has a component in the Y direction (or -Y direction). This is advantageous because it can provide air flow in a preferred direction. For example, the air jet 116 can be tilted so that it is at least partially pointed in a direction away from the edge 114 of the body 113. The air jet 116 can be at a 45° angle to the -Y direction. The air jet 116 can be at an angle of between 20° and 70° relative to the -Y direction. This can advantageously direct contaminant particles toward one or more fluid extraction systems 140.

[0068] Alternatively, for example, the air jet 116 can be angled so that it is at least partially directed toward the edge 114 of the body 113. The air jet 116 can be at an angle of 45° relative to the Y direction. The air jet 116 can be at an angle of between 20° and 70° relative to the Y direction. This can also advantageously direct contaminant particles toward one or more fluid extraction systems 140. However, angled air jets 116 directed toward the edge 114 of the body 113 may be less preferred than angled air jets 116 directed away from the edge of the body (i.e., in the -Y direction). This is because angled air jets 116 directed away from the edge of the body are more effective in moving contaminant particles away from surfaces adjacent to the patterning device MA during lithographic exposure.

[0069] Typically, air jet 116 may be angled between 20° and 70° relative to a plane perpendicular to elongated structure 102 .

[0070] During cleaning, a fluid jet 118 is discharged from the opening 110 on the lower surface of the fluid nozzle 100. The fluid jet 118 is directed downwardly toward the left mask blade 20a. In this embodiment, the fluid is the same fluid as that discharged from the upper opening 108 and can be air. The mask blades 20a, 20b can be moved in the Y direction and can be moved so that the fluid jet 118 is directed toward the two mask blades at different times.

[0071] The opening 110 on the lower surface of the fluid nozzle 100 determines the orientation of the air jet 118. The air jet 118 can be substantially vertical (as shown), i.e., extending downward in the Z direction. Alternatively, the air jet 118 can be at an angle of less than 90° relative to the downward Z direction, so that the air jet has a component in the Y direction (or -Y direction). This is advantageous because it can provide an air flow that directs contaminant particles toward the fluid extraction system 140. The air jet 118 can be at a 45° angle to the Y direction (or -Y direction). The air jet 118 can be at an angle of between 20° and 70° relative to the Y direction (or -Y direction).

[0072] Typically, air jet 118 may be angled between 20° and 70° relative to a plane perpendicular to elongated structure 102 .

[0073] In some embodiments, the opening 110 may be provided on the lower surface of the fluid nozzle 100, while no opening is provided on the upper surface of the fluid nozzle. In this case, cleaning of the masking blades 20a, 20b is provided. Cleaning of the reticle and surrounding areas may be less or no cleaning.

[0074] FIG3 schematically depicts in cross section and in more detail a portion of the fluid nozzle 100 and the two shield blades 20 c , 20 d . Figure 3A The fluid nozzle 100 and one of the shield blades 20c are depicted as viewed from one side. Figure 3B The fluid nozzle 100 and the two shield blades 20c, 20d are depicted as viewed from above.

[0075] The fluid nozzle 100 includes an opening 120 at the end of the fluid nozzle facing the masking blades 20c, 20d. The opening 120 can be referred to as an end opening because it is formed in the edge 114 of the fluid nozzle 100. The masking blades 20c, 20d are movable in the X direction, as indicated by arrow 33. The masking blades 20c, 20d are positioned at a vertical position (Z direction position) corresponding to the vertical position of the fluid nozzle 100. The masking blades 20c, 20d can be used to define the edge of the area on the patterning device MA that is illuminated by EUV radiation in the X direction during lithographic exposure.

[0076] Shown is a part of the conduit in the fluid nozzle 100.Conduit comprises a first portion 106a extending along the elongated structure 156 and a second portion 106b extending below and above the openings 108, 110. The second conduit portion 106b is wider (that is, in the Y direction) than the openings 108, 100. Compared with the second conduit portion 106b having the same width as the openings 108, 110, this advantageously helps to deliver air to the openings with higher pressure. The second conduit portion 106b is also connected to the opening 120 at the end of the fluid nozzle 100.

[0077] When photolithographic exposure is not being performed, a cleaning process can be performed. The cleaning process can include moving the mask blades 20c, 20d so that the tips of the mask blades are adjacent to each other but not touching. The cleaning process can include directing a fluid jet 126 from the end opening 120. In this embodiment, the fluid is the same as the fluid discharged from the upper opening 108 and the lower opening 110 and can be air. The air jet 126 passes between the tips of the mask blades 20c, 20d and removes contaminants from the tips of the mask blades.

[0078] The fluid supply 104 can provide air at a sufficient flow rate so that the air jets 116, 118 provide a shear stress of 50 Pa or greater at the clean reticle MA and / or masking blades 20a, 20b. The fluid supply 104 can provide air at a sufficient flow rate so that the air jets 116, 118 provide a shear stress of 100 Pa or greater at the clean reticle MA and / or masking blades 20a, 20b. The air can be provided at a flow rate high enough to remove contaminant particles from the clean reticle MA and / or masking blades 20a, 20b. The air delivered from the opening 120 in the wall of the fluid nozzle 100 can be provided at a flow rate high enough to remove contaminant particles from the mask blades 20c, 20d.

[0079] The fluid nozzle 100 may be stationary. However, the support structure MT moves in the Y direction, as described above in conjunction with Figure 2As air is delivered from the upper opening 108, the support structure MT moves in the Y direction. As a result, a ribbon of air passes along the support structure MT and thereby removes contaminant particles (or other contaminants) from the support structure MT and the clean reticle MA.

[0080] As shown in the schematic diagram, the cleaning reticle MA does not extend completely to the edge of the support structure MT. Instead, the end 12 of the support structure MT can extend beyond the end of the cleaning reticle MA. The opening 108 can be positioned so that the portion of the support structure MT that receives the cleaning reticle MA passes through the opening 108 during the scanning movement of the support structure MT. This advantageously ensures that the air delivered from the opening 108 is incident on all of the cleaning reticle MA.

[0081] In other embodiments, opening 108 may be positioned such that at least a portion of end 12 of support structure MT receives air from the opening during a scanning motion of the support structure.

[0082] The left shield blade 20a is movable in the Y direction, as indicated by arrow 32. By this movement of the shield blade 20a, the downward air jet 118 from the opening 110 on the lower surface of the fluid nozzle 100 travels over the surface of the left shield blade 20a and removes contaminants therefrom.

[0083] Similarly, the right blade 20b is movable in the Y direction, as indicated by arrow 32. By this movement of the mask blade 20b, a downward air jet (not shown) from an opening in the additional portion 115 of the fluid nozzle 100 can travel over the surface of the right mask blade 20b and remove contaminants therefrom. A downward air jet 118 from the opening 110 on the lower surface of the fluid nozzle 100 can also travel over the surface of the left mask blade 20a and remove contaminants therefrom.

[0084] Figure 4 FIG1 is a schematic perspective view of a distal portion of fluid nozzle 100, including an enlarged view of the distal portion. A portion of a series of openings 108 in the upper surface of elongated structure 102 is shown. Series of openings 108 includes a plurality of openings distributed along the upper surface of the distal end of elongated structure 102. The openings are adjacent to edge 114 of fluid nozzle 100. The openings are elongated openings 108. Openings 108 may be generally rectangular, or may have some other shape.

[0085] A portion of the series of openings 110 on the lower surface of the elongated structure 102 is also located Figure 41. The series of openings 110 includes a plurality of openings distributed along the lower surface of the distal end of the elongated structure 102. The openings are adjacent to an edge 114 of the fluid nozzle 100. The openings are elongated openings 110. The openings 110 may be generally rectangular or may have some other shape.

[0086] exist Figure 4 In the enlarged portion of FIG, you can see the second conduit portion 106b that provides air to the openings 108, 110. As shown, the second conduit portion 106b extends between the openings 108, 110 and is connected to the openings.

[0087] Figure 5 is a schematic cross-sectional view of the fluid nozzle 100 as viewed from above. Figure 5 Both the main body portion 113 and the additional portion 115 are shown. Openings 150 are provided in the lower surface of the additional portion 115. The characteristics of these openings 150 may correspond to the characteristics of the openings 110 provided in the main body portion 113. Figure 5 Not visible in , but in Figure 2 108 ) are also provided in the upper surface of the additional portion 115. The characteristics of these openings 160 may correspond to the characteristics of the openings 108 provided in the main portion 113.

[0088] As above combined Figure 3A and Figure 3B As further described, the conduit 106 includes a first conduit portion 106a extending from the fluid supply 104 within the elongated structure 102. Figure 3A and Figure 3B As further described, the conduit 106 includes a second conduit portion 106b that is disposed above the opening 110 in the body portion 113 (and between the opening 110 and the body portion 113). Figure 5 The conduit 106 further includes a pair of third conduit portions 106c extending to the side 151 of the elongated structure 102.

[0089] Side 151 of elongated structure 102 can have a vertical (Z-direction) dimension that is greater than the dimension of the interior of elongated structure 102 (i.e., the portion in which first conduit portion 106a and second conduit portion 106b are disposed). In other words, side 151 can be thicker than the interior of elongated structure 102. Side 151 can, for example, have a rectangular cross-section. A pair of fourth conduit portions 106d extend along and within side 151 of elongated structure 102. Fourth conduit portions 106d extend to and connect to attachment portion 115 of nozzle 100.

[0090] Fifth conduit portion 106e connects to fourth conduit portion 106d. Fifth conduit portion 106b extends above opening 150 in nozzle attachment portion 115 and below an opening (not shown) in the upper surface of attachment portion 115. Fifth conduit portion 106e is wider than opening 150 (i.e., in the Y direction). This advantageously facilitates delivering air to the opening at a higher pressure than if fifth conduit portion 106e had the same width as opening 150.

[0091] In an embodiment not shown, the fluid nozzle 100 may include the body portion 113 without the additional body portion 115 .

[0092] Typically, because the openings 108, 110 in the main body portion 113 are closer to the fluid supply 104 than the openings 150 in the additional main body portion 115, air can be provided from the openings in the main body portion at a higher flow rate than from the openings in the additional main body portion. Thus, if the additional main body portion is present and includes the openings 150 for providing the air jet, the cleaning operation can primarily use the openings 108, 110 in the main body portion (i.e., the openings in the main body portion can remove more contaminants than the openings in the additional main body portion).

[0093] Opening 150 can be configured to provide the air jet as an air band. Providing an air band is advantageous because it provides a strong cleaning effect. That is, for a given air (or other fluid) flow rate to the nozzle, a stronger cleaning effect can be provided compared to, for example, providing air as a two-dimensional array corresponding to the size of the reticle. In general, embodiments of the present invention can advantageously provide the fluid jet as a fluid band (e.g., provided from a series of openings). The fluid band can extend perpendicular to the scanning direction of the lithographic apparatus. The fluid can be air.

[0094] The fluid nozzle 100 may be provided with one or more series of openings.

[0095] although Figure 5 The conduit 106 depicted in FIG has a particular configuration, but conduits of other configurations may also be used. In general, the conduit can be configured to provide air to an opening that can be used to provide an air jet.

[0096] In one embodiment, a single elongated opening can be provided rather than having a series of openings 108 on the upper surface of the fluid nozzle 100. The length of the single elongated opening can be equal to or greater than the width of a standard patterning device (e.g., 152 mm (6 inches)). Similarly, a single elongated opening can be provided rather than having a series of openings 110 on the lower surface of the fluid nozzle 100. The length of the single elongated opening can be equal to or greater than the width of a standard patterning device (e.g., 152 mm (6 inches)).

[0097] In embodiments where a series of openings 108, 110, 150, 160 are provided, the openings may extend a distance equal to or greater than the width of a standard patterning apparatus (eg, 152 mm (6 inches)).

[0098] In one embodiment, the openings 108, 160 on the upper surface of the fluid nozzle 100 may be circular, elliptical, or some other shape. In one embodiment, the openings 110, 150 on the lower surface of the fluid nozzle 100 may be circular, elliptical, or some other shape.

[0099] The spacing between adjacent openings 108, 110 in a series of openings may be, for example, 2 mm or less, such as 1 mm or less.

[0100] The opening 108 on the upper surface of the body 113 of the fluid nozzle 100 can be located 2 mm or less, such as 1 mm or less, from the edge 114. The opening 110 on the lower surface of the body 113 of the fluid nozzle 100 can be located 2 mm or less, such as 1 mm or less, from the edge 114.

[0101] The opening 150 on the lower surface of the additional body 115 may be located near the edge 154 of the additional body. The opening 160 on the upper surface of the additional body 115 (see Figure 2 ) can be located near the edge 154 of the additional body. The opening 150 on the lower surface of the additional body 115 of the fluid nozzle 100 can be located 2 mm or less, for example, 1 mm or less, from the edge 154. The opening (not shown) on the upper surface of the additional body 113 of the fluid nozzle 100 can be located 2 mm or less, for example, 1 mm or less, from the edge 154.

[0102] For example, the width of the openings 108, 110, 150, 160 (in the Y direction) is at most 4 mm. For example, the width of the openings 108, 110, 150, 160 (in the Y direction) is at least 0.5 mm.

[0103] In one embodiment, the flow rate of the downward air jet 118 is lower than the flow rate of the upward air jet 116. This can be advantageous because the downward air jet 118 may be incident on an encoder or other position measuring device and may thermally affect the accuracy of the position measuring device. In other embodiments, the downward air jet 118 may have substantially the same flow rate as the upward air jet 116. The lower flow rate can be achieved by making the area of ​​the lower opening 110, 150 smaller than the area of ​​the upper opening 108.

[0104] In one embodiment, the opening 108 on the top of the fluid nozzle 100 can be omitted. In this case, the air jet cleans the masking blade 20, but there is no corresponding air jet to clean the reticle MA. Other cleaning methods can be used to clean the reticle MA.

[0105] In one embodiment, the opening 110 on the lower surface of the fluid nozzle 100 may be omitted. In this case, the air jet cleans the reticle MA (and the support structure MT), but there is no corresponding air jet to clean the mask blade 20.

[0106] For ease of description, Cartesian coordinates are used in this specification. However, some embodiments of the present invention may have an orientation different from the Cartesian coordinates described.

[0107] The above description relates to air (or other fluid) jets. A fluid jet can be considered as fluid flowing out of an opening with a higher momentum than the fluid surrounding the opening. The term "jet" should not be interpreted as meaning that the fluid does not diverge after leaving the opening.

[0108] Typically, a fluid (e.g., air) flow can be provided from openings 108 in the upper surface of body portion 113. The fluid (e.g., air) can be provided from openings 108 at a flow rate that enables the fluid to provide a shear stress of 50 Pa or greater (e.g., 100 Pa or greater) at the cleaned reticle MA. The fluid can be provided at a pressure high enough to remove contaminant particles from the cleaned reticle MA.

[0109] A flow of fluid (e.g., air) may be provided from an opening in the upper surface of the additional body portion, for example, at a flow rate such that the fluid provides a shear stress of 50 Pa or more (e.g., 100 Pa or more) at the cleaned reticle MA. The fluid may be provided at a pressure high enough to remove contaminant particles from the cleaned reticle MA.

[0110] A flow of fluid (e.g., air) may be provided from openings 110 in the lower surface of the body portion 113, for example, at a flow rate such that the fluid provides a shear stress of 50 Pa or greater (e.g., 100 Pa or greater) at the shield blade 20 a. The fluid may be provided at a pressure high enough to remove contaminant particles from the shield blade.

[0111] A fluid (e.g., air) flow may be provided from an opening 150 in the lower surface of the additional body portion 115, for example, at a flow rate such that the fluid provides a shear stress of 50 Pa or greater (e.g., 100 Pa or greater) at the shield blade 20 b. The fluid may be provided at a pressure high enough to remove contaminant particles from the shield blade 20 b.

[0112] A flow of fluid (e.g., air) may be provided from the opening 160 in the upper surface of the additional body portion 115, for example, at a flow rate such that the fluid can provide a shear stress of 50 Pa or more (e.g., 100 Pa or more) at the clean reticle MA. The fluid may be provided at a pressure high enough to remove contaminant particles from the clean reticle MA.

[0113] A fluid (e.g., air) may be provided as a jet from an opening 120 in the edge 114 of the body portion 115. The fluid may be provided at a flow rate that provides a shear stress of 50 Pa or greater (e.g., 100 Pa or greater) at the shield blades 20 c, 20 d. The fluid may be provided at a pressure high enough to remove contaminant particles from the shield blades 20 c, 20 d.

[0114] In the above embodiment, the opening 110 in the lower surface of the main body portion 113 of the nozzle 100 is aligned with the opening 108 in the upper surface of the main body portion of the nozzle in the scanning direction (Y direction). Similarly, the opening 150 in the lower surface of the additional main body portion 115 of the nozzle 100 is aligned with the opening (not visible) in the upper surface of the additional main body portion of the nozzle in the scanning direction (Y direction). However, in other embodiments, the openings in the upper and lower surfaces of the nozzle can be offset from each other.

[0115] The nozzle 100 may include one or more valves configured to selectively control which openings or series of openings receive fluid.

[0116] The series of openings 108, 160 disposed on the upper surface of the fluid nozzle 100 may be referred to as upper openings. The series of openings 110, 150 disposed on the lower surface of the fluid nozzle 100 may be referred to as lower openings.

[0117] In the above embodiment, the cleaning mask MA exists when the cleaning operation is performed. However, the cleaning mask MA may not exist when the cleaning operation is performed.

[0118] The method according to an embodiment of the present invention can be performed by a computing device. The device may include a central processing unit ("CPU") connected to a memory. The method described herein may be implemented in code (software), which is stored on a memory including one or more storage media and is arranged to be executed on a processor including one or more processing units. The storage medium may be integrated into the CPU and / or separated from the CPU. The code, which may be referred to as an instruction, is configured to be retrieved from the memory and executed on the processor to perform operations consistent with the embodiments discussed herein. Alternatively, it is not excluded that some or all of the functions of the CPU are implemented in a dedicated hardware circuit system or a configurable hardware circuit system such as an FPGA.

[0119] The computing device may include an input configured to enable a user to input data into a software program running on the CPU. The input device may include a mouse, keyboard, touch screen, microphone, etc. The computing device may also include an output device configured to output measurement results to the user.

[0120] Although specific reference may be made herein to the use of lithographic apparatus in IC manufacturing, it should be understood that the lithographic apparatus described herein may have other applications. Other possible applications include the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat panel displays, liquid crystal displays (LCDs), thin film magnetic heads, and the like.

[0121] Although specific reference may be made herein to embodiments of the present invention in the context of a lithographic apparatus, embodiments of the present invention may also be used in other equipment. Embodiments of the present invention may form part of a mask inspection apparatus, a metrology apparatus, or any apparatus that measures or processes an object, such as a wafer (or other substrate) or a mask (or other patterning apparatus). These apparatuses may generally be referred to as lithographic tools. Such lithographic tools may utilize vacuum conditions or ambient (non-vacuum) conditions.

[0122] Although specific reference may be made above to the use of embodiments of the present invention in the context of optical lithography, it will be appreciated that the present invention is not limited to optical lithography and may also be used in other applications, such as imprint lithography, where the context permits.

[0123] Where the context permits, embodiments of the present invention may be implemented in hardware, firmware, software, or any combination thereof. Embodiments of the present invention may also be implemented as instructions stored on a machine-readable medium that can be read and executed by one or more processors. A machine-readable medium may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing device). For example, a machine-readable medium may include read-only memory (ROM); random access memory (RAM); magnetic storage media; optical storage media; flash memory devices; electrical, optical, acoustic, or other forms of propagated signals (e.g., carrier waves, infrared signals, digital signals, etc.), etc. In addition, firmware, software, routines, instructions may be described herein as performing certain actions. However, it should be understood that such descriptions are for convenience only, and that such actions are actually caused by a computing device, processor, controller, or other device executing the firmware, software, routines, instructions, etc., and in doing so, causing an actuator or other device to interact with the physical world.

[0124] Although specific embodiments of the present invention have been described above, it should be understood that the present invention may be practiced in other ways than those described. The above description is intended to be illustrative and not limiting. Therefore, it will be understood by those skilled in the art that modifications may be made to the described invention without departing from the scope of the following claims.

Claims

1. A fluid nozzle for a patterning device environment of a lithography apparatus, comprising: an elongated structure having an upper surface and a lower surface when the elongated structure is in a horizontal orientation; at least one lower opening disposed in said lower surface of said elongated structure; as well as A conduit is connected to the at least one lower opening, the at least one lower opening being configured to provide a flow of fluid conveyed through the conduit.

2. The fluid nozzle of claim 1 , wherein the fluid nozzle further comprises at least one upper opening disposed in the upper surface of the elongated structure, the conduit being connected to the at least one upper opening, the at least one upper opening being configured to provide a fluid flow delivered via the conduit. 3 . The fluid nozzle of claim 2 , wherein the at least one lower opening and / or the at least one upper opening are configured to provide a fluid jet.

4. A fluid nozzle according to claim 2 or claim 3, wherein the at least one lower opening and / or the at least one upper opening comprises a series of openings extending across the elongate structure.

5. The fluid nozzle according to any one of claims 2 to 4, wherein the at least one lower opening and / or the at least one upper opening is provided adjacent an edge forming part of the elongated structure.

6. The fluid nozzle according to any one of claims 2 to 5, wherein an area of ​​the lower opening is smaller than an area of ​​the upper opening.

7. The fluid nozzle of any one of claims 2 to 6, wherein the at least one lower opening is oriented at an angle of between 20° and 70° relative to a plane perpendicular to the elongated structure.

8. The fluid nozzle of any one of claims 2 to 7, wherein the at least one upper opening is oriented at an angle of between 20° and 70° relative to a plane perpendicular to the elongated structure.

9. The fluid nozzle of any preceding claim, wherein the fluid nozzle further comprises an opening provided in an end wall of the elongated structure.

10. The fluid nozzle according to any one of the preceding claims, wherein the elongated structure comprises a main body portion and an additional portion, and wherein the at least one lower opening is provided in a lower surface of the main body portion and / or the additional portion.

11. A fluid nozzle for a patterning device environment of a lithography apparatus, comprising: An elongated structure having an upper surface and a lower surface; at least one upper opening disposed in said upper surface of said elongated structure; as well as A conduit is connected to the at least one upper opening, the at least one upper opening being configured to provide a flow of fluid conveyed through the conduit.

12. A photolithography patterning device environment, comprising a patterning device support structure, a fluid nozzle, and a masking blade; wherein The fluid nozzle includes an elongated structure extending between the patterning apparatus support structure and the masking blade, the elongated structure having an upper surface and a lower surface, the elongated structure being positioned above the masking blade, wherein At least one lower opening is provided in the lower surface of the elongated structure, and a conduit is connected to the at least one lower opening, the at least one lower opening being configured to provide a flow of fluid conveyed via the conduit, and wherein the at least one lower opening provided in the lower surface of the elongated structure is located above the shield blade.

13. A lithographic apparatus comprising the lithographic patterning tool environment according to claim 12, and further comprising a fluid supply device configured to supply fluid to the at least one lower opening at a flow rate that provides a shear stress of 50 Pa or greater at the mask blade.

14. A method for cleaning a patterning device environment of a lithographic apparatus, the method comprising providing a fluid to a fluid nozzle elongated structure and directing the fluid from at least one lower opening provided in a lower surface of the elongated structure such that the fluid is incident on a shielding blade of the patterning device environment at a flow rate high enough to remove contaminant particles from the shielding blade.

15. A method for cleaning a patterning device environment of a lithographic apparatus, the method comprising providing a fluid to a fluid nozzle elongated structure and directing the fluid from at least one upper opening disposed in an upper surface of the elongated structure such that the fluid is incident on the cleaning mask or the support structure at a flow rate high enough to remove contaminant particles from the cleaning mask or the support structure in the patterning device environment.

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